TWI261717B - Liquid crystal display device and its manufacturing method - Google Patents
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- TWI261717B TWI261717B TW92107872A TW92107872A TWI261717B TW I261717 B TWI261717 B TW I261717B TW 92107872 A TW92107872 A TW 92107872A TW 92107872 A TW92107872 A TW 92107872A TW I261717 B TWI261717 B TW I261717B
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- 239000000758 substrate Substances 0.000 abstract description 67
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 27
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 229910052736 halogen Inorganic materials 0.000 description 20
- 150000002367 halogens Chemical class 0.000 description 20
- 238000000034 method Methods 0.000 description 9
- 239000011159 matrix material Substances 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 239000003086 colorant Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000001054 red pigment Substances 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 101100290380 Caenorhabditis elegans cel-1 gene Proteins 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 241000238631 Hexapoda Species 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000004043 dyeing Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- KXXXUIKPSVVSAW-UHFFFAOYSA-K pyranine Chemical compound [Na+].[Na+].[Na+].C1=C2C(O)=CC(S([O-])(=O)=O)=C(C=C3)C2=C2C3=C(S([O-])(=O)=O)C=C(S([O-])(=O)=O)C2=C1 KXXXUIKPSVVSAW-UHFFFAOYSA-K 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- WPPDXAHGCGPUPK-UHFFFAOYSA-N red 2 Chemical compound C1=CC=CC=C1C(C1=CC=CC=C11)=C(C=2C=3C4=CC=C5C6=CC=C7C8=C(C=9C=CC=CC=9)C9=CC=CC=C9C(C=9C=CC=CC=9)=C8C8=CC=C(C6=C87)C(C=35)=CC=2)C4=C1C1=CC=CC=C1 WPPDXAHGCGPUPK-UHFFFAOYSA-N 0.000 description 1
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- 238000004528 spin coating Methods 0.000 description 1
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- Liquid Crystal (AREA)
Abstract
Description
12617171261717
發明所屬之技術領 本發明係有關 於可改善争音現象 域 於液晶顯示器及其製作方法 的液晶顯示器及其製作方法 特別有關 先前技術 LCD) /曰曰日曰 ί Γ 器(1 iqUid CryStal display,以下簡稱 曰八^刖平面顯示器發展的主流,其顯示原理是利用液 ϊ、i曰:ί有的介電異方性及導電異方性’於外加電場時 ϋ日。日刀 排列狀態轉換,造成液晶薄膜產生各種光電 液晶顯示器的面板結構一般為由兩片基板疊合而成, 中2留有一定距離的空隙用以灌注液晶,而在上下兩基板 上刀別形成有對應電極,用以控制液晶分子的轉向及排 列0 般溥膜電晶體(Thin Film Transistor ; TFT)液晶 顯不器的面板,由一片設置有薄膜電晶體陣列的TF τ陣列 ν 基板及一片設置有彩色濾光膜層的彩色濾光片所組成,以 下分別說明TFT陣列基板與彩色濾光片的詳細結構。 首先參照第1與第2圖說明TFT陣列基板的製作流程, 第1圖為一TF T陣列基板的上視圖;第2圖顯示沿第1圖中線f 段I - I剖切所得剖面圖。 首先提供一絕緣基板(例如玻璃、石英等)1 〇 1,接著 依序形成閘極108和絕緣層1 07(第1圖中未顯示)於絕緣基 板101上,之後一通道層106形成於上述絕緣層107之上、BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display capable of improving a slogan phenomenon in a liquid crystal display and a method of fabricating the same, and a method of fabricating the same, and more particularly to a prior art LCD)/1 iqUid CryStal display, The following is the mainstream of the development of flat panel display, the display principle is to use liquid helium, i曰: ί, dielectric anisotropy and conductive anisotropy, the next day when the electric field is applied. The panel structure for causing the liquid crystal film to produce various photoelectric liquid crystal displays is generally formed by laminating two substrates, wherein a gap of a certain distance is left for injecting liquid crystal, and corresponding electrodes are formed on the upper and lower substrates to form corresponding electrodes for A panel for controlling the steering of liquid crystal molecules and aligning a thin film transistor (TFT) liquid crystal display, comprising a TF τ array ν substrate provided with a thin film transistor array and a color filter layer provided thereon The color filter is composed of the following, and the detailed structure of the TFT array substrate and the color filter will be described below. First, the TFT array will be described with reference to the first and second figures. The manufacturing process of the substrate, Fig. 1 is a top view of a TF T array substrate; Fig. 2 is a cross-sectional view taken along line I - I of the line f in Fig. 1. First, an insulating substrate (such as glass, quartz, etc.) is provided. a 〇1, and then a gate 108 and an insulating layer 107 (not shown in FIG. 1) are sequentially formed on the insulating substrate 101, and then a channel layer 106 is formed on the insulating layer 107,
1261717 五、發明說明(2) 源極電極1 0 2和汲極電極1 0 3分別形成於通道層1 〇 6之上, 源極1 0 2和沒極1 〇 3係由摻有雜質之複晶矽所形成。資料線 104和晝素電極1〇5設置於絕緣1〇7上,分別耦接源極電極-1 0 2和及極電極1 〇 3。由複晶矽構成之通道層丨〇 6,配置於 源極電極102和源極電極103之間,並分別和源極電極丨〇2 和源極電極1 〇 3形成電性接觸。 第3圖顯示沿第1圖中線段]j — π剖切所得剖面圖,其 顯示在TFT陣列基板中資料線丨04部分的剖面情形。1261717 V. DESCRIPTION OF THE INVENTION (2) The source electrode 1 0 2 and the drain electrode 1 0 3 are respectively formed on the channel layer 1 〇6, and the source 1 0 2 and the immersed 1 〇 3 are made of impurities. The crystal is formed. The data line 104 and the halogen electrode 1〇5 are disposed on the insulating 1〇7, and are coupled to the source electrode-1 0 2 and the electrode 1 〇 3, respectively. A channel layer 丨〇6 composed of a polysilicon is disposed between the source electrode 102 and the source electrode 103, and is in electrical contact with the source electrode 丨〇2 and the source electrode 1 分别 3, respectively. Fig. 3 is a cross-sectional view showing the line segment ?j - π in Fig. 1 showing the profile of the data line 丨 04 portion in the TFT array substrate.
接著參照第4圖,說明彩色濾光片的結構。彩色濾光 片的基本結構為於一玻璃基板2〇1上,先製作一層防^射 的黑矩陣層2 0 2 (black matrix, BM),接著再依序製作具 有透光性紅2 0 3、綠204、藍205 (RGB)三原色的彩色濾光/膜 層(彩色濾光膜層的形狀、尺寸、色澤、配列依不同用途 的液晶顯示器而異),最後再濺鍍上一層畫素電極層 2 0 6^,其材質一般為透明導電膜(如氧化銦錫,丨τ〇 )θ , 為薄膜電晶體陣列基板上晝素電極丨〇 5的對應電極。 如上所述,分別完成TFT陣列基板與彩色濾光片後, 再將此兩片基板對準貼和,使並於中間灌注液晶3,宓 後就完成了液晶顯示器面板的製作。 、 此時,沿第1圖中線段Π _ Π剖切上述面板,所 圖如第5圖所示。由於畫素電極層20 6為全面性的形二 2:01二ί在資料線104上方亦對應形成有晝素電極層 Mb,由方;旦素電極層2〇6與資料線丨〇4皆屬金, 種金屬重疊後再加上中間夾有介電材質的液晶,會貝產生電Next, the structure of the color filter will be described with reference to Fig. 4. The basic structure of the color filter is to form a black matrix layer 2 0 2 (black matrix, BM) on a glass substrate 2〇1, and then sequentially produce a light transmissive red 2 0 3 , Green 204, Blue 205 (RGB) color filter / film layer (color filter film layer shape, size, color, with different types of liquid crystal display), and finally splashed a layer of pixel electrode The layer 2 0 6^ is generally made of a transparent conductive film (such as indium tin oxide, 丨τ〇) θ, which is a corresponding electrode of the halogen electrode 丨〇5 on the thin film transistor array substrate. After the TFT array substrate and the color filter are respectively completed as described above, the two substrates are aligned and pasted, and the liquid crystal 3 is poured in between, and the liquid crystal display panel is completed. At this time, the panel is cut along the line segment _ _ 第 in Fig. 1, as shown in Fig. 5. Since the pixel electrode layer 20 6 is a comprehensive shape 2:01 2 , a halogen electrode layer Mb is formed correspondingly above the data line 104, and the square electrode layer 2〇6 and the data line 丨〇4 are both It belongs to gold. After the metal is overlapped, it is added with a liquid crystal with a dielectric material in the middle.
1261717 五、發明說明C3) 而引發串音現象,而此現 會導致顯示時晝面品質不 容效應,容易造成訊號的衰減 象在大尺寸面板時更容易發生 良,影響良率。 發明内容 有鑑於此,本發明的目的在於改善液晶顯示器的串音 現象,並提升顯示畫面品質。 為達上述目的,本發明中藉由將彩色濾光片基板一側 的畫素電極圖形化,使部分對應於TFT基板之資料線上方 的畫素電極薄化或去除,以減低彩色濾光片基板之畫素電 極與T F T基板之資料線兩者間的的柄合電容,進而可降低 串音效應、改善顯示的晝面品質,達到提升顯示器良率及 性能的功效。 本發明所提之液晶顯示器包括:一第一基板,其上形 成有複數條相互平行之閘極線與複數條相互平行之資料 線,且上述閘極線與資料線係垂直相交,並於相鄰二閘極 線與相鄰二資料線間形成一畫素區;一源極-汲極區形成 於上述晝素區内,且此源極係與上述相鄰二資料線中之一 資料線形成電性連接;一第一晝素電極形成於上述畫素區 上,且與上述汲極形成電性連接;一第二基板設置於第一 基板上方既定距離處,其上形成有複數個彩色濾光區,每 一彩色濾光區下方並對應有第一基板上的一晝素區;以及 一第二畫素電極層形成於該第二基板上,其具有一厚度相 對較小的區域,且該區域係對應於上述資料線上方。1261717 V. Inventive Note C3) causes crosstalk, which now causes the quality of the surface to be invisible during display, which is likely to cause attenuation of the signal, which is more likely to occur in large-sized panels and affects yield. SUMMARY OF THE INVENTION In view of the above, an object of the present invention is to improve a crosstalk phenomenon of a liquid crystal display and improve display picture quality. In order to achieve the above object, in the present invention, the pixel electrode on one side of the color filter substrate is patterned, and the pixel electrode corresponding to the pixel line corresponding to the TFT substrate is thinned or removed to reduce the color filter. The shank capacitance between the pixel electrode of the substrate and the data line of the TFT substrate can further reduce the crosstalk effect, improve the quality of the displayed surface, and improve the display yield and performance. The liquid crystal display of the present invention comprises: a first substrate on which a plurality of mutually parallel gate lines and a plurality of parallel data lines are formed, and the gate lines and the data lines are perpendicularly intersected, and A pixel region is formed between the adjacent two gate lines and the adjacent two data lines; a source-drain region is formed in the above-mentioned pixel region, and the source line and one of the adjacent two data lines Forming an electrical connection; a first halogen electrode is formed on the pixel region and electrically connected to the drain; a second substrate is disposed at a predetermined distance above the first substrate, and a plurality of colors are formed thereon a filter region, below each color filter region and corresponding to a halogen region on the first substrate; and a second pixel electrode layer formed on the second substrate, the region having a relatively small thickness, And the area corresponds to above the above data line.
0773-9242twf(nl);P91169;Renee.ptd 第7頁 1261717 五 形成 線, 線與 於上 資料 上, 基板 ~彩 一第 域, 上形 料線 極線 —源 資料 上, 基板 及一 較小 母一 上述 二基 、發明說明(4) 本發明尚提供一液晶顯示器包括:一第一基板,其上 有複數條相互平行之閘極線與複數條相互平行之資料 且上述閘極線與資料線係垂直相交,並於相鄰二閉極 相鄰·一資料線間形成一畫素區;一源極—汲極區形成 述畫素區内,且此源極係與上述相鄰二資料線中之一 線形成電性連接;一第一畫素電極形成於上述畫素區 且與上述汲極形成電性連接;一第二基板設置於第一 上方既定距離處,其上形成有複數個彩色濾光區,每 色;慮光區下方並對應有弟一基板上的一晝素區;以及 二晝素電極層形成於第二基板上,其具有一穿孔區 且此穿孔區域係對應於上述資料線上方。 上述液晶顯示器的製作方法,包括:提供一基板,其 成有複數條相互平行之閘極線與複數條相互平行之〔身 ’且上述閘極線與資料線係垂直相交,並於相鄰二閘 與相鄰二資料線間形成一晝素區,於畫素區内形成有 極-汲極區,且此源極係與上述相鄰二資料線中之一 線形成電性連接;形成一第一晝素電極於上述晝素區 且與上述汲極形成電性連接;提供一第二基板於第一 亡方既定距離處,其上形成有複數個彩色濾光區,以 第二晝素電極層,且第二畫素電極層具有一厚度相 之區域;對準上述第一與第二基板叫吏第二基板上之 彩色濾光區下方對應有第一基板上的一晝素區,且 區域下方對應於上述資料線;以及貼合上述第一與第 板00773-9242twf(nl);P91169;Renee.ptd Page 7 1261717 Five forming lines, lines and data, substrate ~ color one field, upper material line polar line - source data, substrate and a smaller The present invention further provides a liquid crystal display comprising: a first substrate having a plurality of mutually parallel gate lines and a plurality of parallel data and said gate lines and data The lines are perpendicularly intersected, and a pixel area is formed between adjacent two closed poles and one data line; a source-drainage area is formed in the pixel region, and the source line and the adjacent two data are One of the lines forms an electrical connection; a first pixel electrode is formed in the pixel region and electrically connected to the drain; a second substrate is disposed at a predetermined distance above the first surface, and a plurality of pixels are formed thereon a color filter region, each color; below the light-receiving region and corresponding to a halogen region on a substrate; and a dioxad electrode layer formed on the second substrate, having a perforated region and the perforated region corresponding to Above the above data line. The manufacturing method of the above liquid crystal display comprises: providing a substrate, wherein a plurality of gate lines parallel to each other and a plurality of parallel lines are parallel to each other; and the gate lines and the data lines are perpendicularly intersected, and adjacent to each other Forming a halogen region between the gate and the adjacent two data lines, forming a pole-drain region in the pixel region, and the source system is electrically connected with one of the adjacent two data lines; forming a first a halogen electrode is electrically connected to the above-mentioned germanium region and is electrically connected to the above-mentioned drain electrode; a second substrate is provided at a predetermined distance of the first dead side, and a plurality of color filter regions are formed thereon, and the second halogen electrode is formed a layer, and the second pixel electrode layer has a region of a thickness phase; the first and second substrates are aligned with a single pixel region on the first substrate below the color filter region on the second substrate, and The area below corresponds to the above data line; and the first and the first board are attached to the above
) ;P91169; Renee .ptd 第8頁 1261717); P91169; Renee .ptd Page 8 1261717
五、發明說明(5) 根據本發 定,較佳為氧 根據本發 言較小,其可 除,而得相對 因只需相對較 間之耦合電容 亦即將此區域 根據本發 區域組成,且 對應之區域戶斤 根據本發 器的結構設計 薄化或去除, )、降低因輕 音效應(c r 〇 s 為了讓本 下文特舉出較 下: :月’上述第一與第二畫素電極的 化銦錫(ιτο)或氧化銦辞(IZ〇)。、过無限 明,上述區域之厚度相對第二畫素電 利用如微影蝕刻等製程將此區域薄化二而 較小厚度或-穿孔區域。其厚度並】 小=:即可降低此畫素電極層與“績 而達本卷明之功效,惟較佳之厚度為〇 、复 中的第二晝素電極完全去除’而形成穿孔’。 明,上述區域及穿孔區域可為由複數個條 此等條狀區域為由上述源極—汲極區上方〃 分隔。 明之液晶顯不器及製作方法,透過液晶顯示 ’亦即藉由將部分資料線上方對應晝素電極 而叮降低資料線的電谷負荷(C loading 合電容(coupling capacitance)而引起的串 s t a 1 k ),進而提高顯示器的晝面品質。 發明之上述目的、特徵和優點更明顯易懂, 佳實施例,並配合所附圖示,作詳細說明如 實施方式 實施例 TFT-LCD主動陣列基板的製作 第6 A〜6 D圖係顯示本實施例τ F T - L C D主動陣列基板製作V. Description of the invention (5) According to the present invention, it is preferred that the oxygen is small according to the present statement, and the dipole can be divided, and the relatively small coupling capacitance is required, and the region is composed according to the local area, and corresponding The area of the household is thinned or removed according to the structure of the hair device, ), and the light effect is reduced (cr 〇s in order to make the following special details: : month' above the first and second pixel electrodes Indium tin (I 〇 ( 或 或 或 或 或 或 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 The thickness of the region and the small =: can reduce the effect of the pixel layer and the performance of the present invention, but the preferred thickness is 〇, the second halogen electrode in the complex is completely removed 'to form a perforation'. The above-mentioned region and the perforated region may be separated by a plurality of strips from the top of the source-drain region. The liquid crystal display device and the manufacturing method thereof are transmitted through the liquid crystal display 'that is, by using a portion Corresponding to the top of the data line Extremely reduce the electric valley load of the data line (string sl 1 k caused by C loading coupling capacitance), thereby improving the quality of the display. The above objects, features and advantages of the invention are more obvious and easy to understand. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The fabrication of a TFT-LCD active array substrate according to an embodiment of the present invention is shown in FIGS. 6A to 6D. The τ FT-LCD active array substrate is shown in this embodiment.
0773-9242twf(nl);P91169;Renee.ptd 第9頁 1261717 、發明說明(6) 視圖。本實施例中以底問極(bottom gate)的 並明TFT_LCD主動陣列基板的製作,然而本發明 不限於底閘極之TFT-LCD主動陣列基板,亦可應用於頂 閣極Uop gate)之TFT-LCD主動陣列基板。0773-9242twf(nl); P91169; Renee.ptd Page 9 1261717, Invention Description (6) View. In this embodiment, the bottom gate of the TFT_LCD active array substrate is fabricated, but the invention is not limited to the TFT-LCD active array substrate of the bottom gate, and can also be applied to the TFT of the top gate Uop gate. - LCD active array substrate.
—首先,如第6A圖所不,提供如為玻璃的一基底〇,進 行、>儿積製程與第一道微影蝕刻步驟(pEp__丨,即使用第一 個光罩)而形成橫向延伸的平行閘極線3〇〇、3〇1於基底〇 上’其中閘極線3 0 0具有一凸出部,此凸出部係一閘極 3 1 2。接著,形成一閘極絕緣層3 〇 5 (未顯示)於閘極線 300、301、閘極312及基底0上。其中,閘極線3〇〇、3〇1與 閘極3 1 2例如是經由沉積法所形成的金屬層。其中,間極 絕緣層3 0 5例如是經由沉積法所形成的二氧化矽層、氣化 矽(S i Nx)層或氮氧化矽層。 接著請參照第6B圖,進行一沉積製程與第二道微影# 刻步驟(PEP- II,即使用第二個光罩)而形成a -Si層(在n+ α - S i層3 1 3下方,未顯示)與n+ a - S i層3 1 3於部分閘極絕 緣層305上,其中J-Si層與n+cu-Si層313係構成位在電晶 體區 310 的一半導體島(α - Si semiconductor isiand)。- First, as shown in Fig. 6A, providing a substrate such as glass, performing, > entanglement process and first lithography etching step (pEp__丨, using the first mask) to form a lateral direction The extended parallel gate lines 3〇〇, 3〇1 are on the substrate '', wherein the gate line 300 has a protrusion, and the protrusion is a gate 3 1 2 . Next, a gate insulating layer 3 〇 5 (not shown) is formed on the gate lines 300, 301, the gate 312, and the substrate 0. Among them, the gate lines 3〇〇, 3〇1 and the gate 3 1 2 are, for example, metal layers formed by a deposition method. The inter-electrode insulating layer 305 is, for example, a cerium oxide layer, a vaporized cerium (S i Nx) layer or a cerium oxynitride layer formed by a deposition method. Next, referring to FIG. 6B, a deposition process and a second lithography step (PEP-II, ie using a second mask) are performed to form an a-Si layer (in the n+α-S i layer 3 1 3 The lower layer, not shown) and the n+ a - S i layer 3 1 3 are on a portion of the gate insulating layer 305, wherein the J-Si layer and the n+cu-Si layer 313 form a semiconductor island located in the transistor region 310 ( α - Si semiconductor isiand).
接著請參照第6C圖,先沉積一導體層(未圖示),然後 進行第三道微影蝕刻步驟(PEP-I I I,即使用第三個光罩) 去除部份該導體層(未圖示)而形成縱向延伸的資料線 4 0 0、4 0 1於閘極絕緣層3 0 5上,以及形成一源極3 1 6與一沒 極3 1 4於該η+ α - S i層3 1 3上。接著,以源極3 1 6與汲極3丨$為 罩幕,回蝕部分η+α - Si層313而露出部分α-Si層的表面,Next, please refer to FIG. 6C, first deposit a conductor layer (not shown), and then perform a third lithography etching step (PEP-I II, that is, using a third mask) to remove part of the conductor layer (not shown). And forming a longitudinally extending data line 4 0 0, 4 0 1 on the gate insulating layer 300, and forming a source 3 16 and a dipole 3 1 4 in the η + α - S i layer 3 1 3 on. Next, using the source 3 16 and the drain 3 丨 $ as a mask, the portion of the η + α - Si layer 313 is etched back to expose the surface of the portion of the α-Si layer.
1261717 五、發明說明(7) 如此即構成了位在電晶體區310的一薄膜電晶體(TFT)結 構’其中源極31 6係與資料線400電性連接。 接著請參照第6 D圖,第6 D圖係顯示本實施例τ ρ T — l C D 主動陣列基板之上視圖。 接者全面 並經由曝 ’以露出沒 在元成電晶體區310的薄膜電晶體製作後 性形成一透明光阻層(未顯示)於基板〇表面 光顯影,於對應汲極3 14上方形成一接觸孔3 〇 7 極3 1 4表面。 最後,形成畫素電極801於畫素區3〇6上。畫素電極 80 1採用透明性高、電阻低的材質,例如氧化銦錫,用以 驅動液晶排列方向。畫素電極801經由接觸孔30 7與汲極 3 1 4形成電性連接。 彩色濾光片的製作 彩色濾光片有許多製作方法,如顏料分散法、染色 法、電著法、印刷法等。以下舉顏料分散法為例,說明本 實施例中彩色濾光片的製程。參照第7 A〜7 I圖,說明彩色 濾光片的製作流程。 如第7A圖,首先提供一玻璃基板0,,並在其上形成一 遮光層7 0 1,其材質例如為金屬鉻或黑色感光樹脂,接著 如第7B圖,利用微影蝕刻形成矩陣圖案,稱為黑矩陣,作0 為遮光之用,並用以分隔接續製作的彩色濾光層,以增進 色彩的對比性。 其次依序製作紅、藍、綠三原色的濾光晝素。首先如 第7 C圖’利用旋塗方式在基板0 ’表面形成一紅色顏料光阻1261717 V. DESCRIPTION OF THE INVENTION (7) Thus, a thin film transistor (TFT) structure in the transistor region 310 is formed, in which the source 31 6 is electrically connected to the data line 400. Referring to FIG. 6D, FIG. 6D is a top view showing the τ ρ T — l C D active array substrate of the embodiment. The receiver is fully exposed and exposed to form a transparent photoresist layer (not shown) on the surface of the substrate after exposure to form a thin film transistor not formed in the transistor region 310, and a contact is formed on the corresponding drain 3 14 . Hole 3 〇 7 pole 3 1 4 surface. Finally, a pixel electrode 801 is formed on the pixel region 3〇6. The pixel electrode 80 1 is made of a material having high transparency and low electrical resistance, such as indium tin oxide, for driving the liquid crystal alignment direction. The pixel electrode 801 is electrically connected to the drain 3 1 4 via the contact hole 30 7 . Production of color filters There are many methods for producing color filters, such as pigment dispersion, dyeing, electrophotography, and printing. The pigment dispersion method will be exemplified below to illustrate the process of the color filter in this embodiment. The flow of the color filter will be described with reference to Figures 7A to 7I. As shown in FIG. 7A, a glass substrate 0 is first provided, and a light shielding layer 701 is formed thereon, and the material thereof is, for example, a metal chromium or a black photosensitive resin, and then, as shown in FIG. 7B, a matrix pattern is formed by photolithography. It is called black matrix, and it is used for shading. It is used to separate successively produced color filter layers to enhance the contrast of colors. Secondly, the filter elements of the three primary colors of red, blue and green are sequentially produced. First, a red pigment photoresist is formed on the surface of the substrate 0' by spin coating as shown in Fig. 7C.
0773 ,9242twf(nl);P91169;Renee.ptd 第11頁 1261717 五、發明說明(8) 702,接著如第7D圖,以曝光顯影的方式,在預定形成紅 色晝素的位置留下紅色顏料光阻702,並去 ^ ^ 7E «,. 面,分別在黑矩陣701分隔的晝素區中形成藍色7〇3與綠色 704的濾光晝素。彩色濾光片中晝素的排列位置並不一 :,紅、綠、藍三色可以馬赛克方式、直條式或三角形方 式排列。 如’接著在基㈣,表面覆蓋—層透明的平括層 極V?。取6後ΪΓ:',再於平坦層70 5表面形成-層畫素電 層m,其材貝-般為透明導電膜,例如為ιτ_ζ〇, :以驅動液晶分子的排列。之後進行本發明之一 驟=素電極層m上形成一層光阻(未顯示),並經 衫蝕刻製程,剝除光阻後於晝素電極 :圖案區7。7 ’如第7H圖。第71圖顯 :: 圖,圖案區7 07的位置為對應前述τρτ_主動H視 條狀區❹㈠”刀…子對應τ;夕二?^ 極區31 G所鄰接的資料線' 在 :列基板上源極-沒 刻時間使圖案區70 7的厚产車=:’可利用控制1虫 小,如第7J圖所示,亦可又如晝素電極層70 6的厚度 透明導電材質完全去除。 回將圖案區7 0 7部分的 cel 1製程 接著,如一般液晶顯示器製程 進行彩色濾光片基板0773, 9242twf(nl); P91169; Renee.ptd Page 11 1261717 V. Inventive Note (8) 702, and then, as shown in Fig. 7D, left red pigment light at a position where red pigment is intended to be formed by exposure and development. Block 702, and go to ^ ^ 7E «,. Surface, respectively, in the black matrix 701 separated in the halogen region to form blue 7 〇 3 and green 704 filter halogen. The arrangement of halogens in color filters is not the same: red, green, and blue colors can be arranged in a mosaic, straight, or triangular manner. For example, 'on the base (four), the surface is covered with a layer of transparent flat layer V?. After taking 6 ΪΓ: ', a layer of photolithographic layer m is formed on the surface of the flat layer 70 5 , and the material is generally a transparent conductive film, for example, ιτ_ζ〇, to drive the alignment of the liquid crystal molecules. Thereafter, a layer of photoresist (not shown) is formed on the element layer m, and is subjected to a mask etching process to strip the photoresist to the pixel electrode: pattern region 7. 7' as shown in Fig. 7H. Fig. 71 shows: Fig., the position of the pattern area 7 07 is corresponding to the aforementioned τρτ_active H line strip area ❹(1) "knife ... subcorresponding to τ; 夕二?^ pole area 31 G adjacent to the data line ' in: column The source on the substrate - no time to make the pattern area 70 7 thick car =: 'can be controlled by a small insect, as shown in Figure 7J, or as the thickness of the halogen electrode layer 70 6 transparent conductive material completely Remove the cel 1 process of the pattern area 7 0 7 and then, as in the general liquid crystal display process, the color filter substrate
第12頁 1261717Page 12 1261717
/、TFT LCD主動陣列基板的對準及貼合步驟,使每一畫素 區306上方分別對應有一彩色濾光區702、703、704,且使 圖案區70 7的條狀區域與資料線4〇〇、4〇1重疊,並使分隔 條狀區域的部分正好對應TFT-LCD主動陣列基板上源極-汲 極區0所鄰接的資料線,其部分剖面圖如第7K圖所示。 最後’再於貼和後的液晶顯示器内灌注液晶,封口後 即完成本實施例液晶顯示器的製作。 立、本實施例液晶顯示器的結構,TFT-LCD主動陣列基板 部分包含一基板〇,其上形成有相互平行之閘極線3〇〇、 3一〇1與相互平行之資料線4〇〇、401,且閘極線30 0、3〇1與 貝^線4 0 0、4 0 1係垂直相交。於相鄰閘極線3 〇 〇、3 〇丨與相 鄰貪料線4 0 0、4 0 1間形成一晝素區3 〇 6,而於畫素區3 〇 6内 形成有一電晶體區3 1 0,源極3 1 6與資料線4 0 〇形成電性連 接。於晝素區306上方並形成有一晝素電極。 彩色濾光片部分包括一基板〇,,其上形成有黑矩陣 701、彩色濾光晝素702、70 3、7 04、平坦層70 5、以及圖 案化的晝素電極層70 6。其中圖案區70 7為由多個條狀區域 組成,在經基板對準貼和封裝後,與TFT—LCI)主動陣列基 板上資料線4 0 0、4 0 1的位置重疊,且分隔條狀區域的部分 正好對應TFT-LCD主動陣列基板上源極-汲極區3 1〇所接7 的貨料線。 如上述,本發明之液晶顯示器的結構及製作方法,藉 由將彩色濾光片基板一側的晝素電極圖形化,使部分對鹿 方;T F T基板之資料線上方的畫素電極薄化或去除,以減' ^氏/, the alignment and bonding steps of the TFT LCD active array substrate, such that each of the pixel regions 306 corresponds to a color filter region 702, 703, 704, respectively, and the strip region of the pattern region 70 7 and the data line 4 〇〇, 4〇1 overlap, and the portion of the strip-like region corresponds exactly to the data line adjacent to the source-drain region 0 on the TFT-LCD active array substrate, and a partial cross-sectional view thereof is shown in FIG. 7K. Finally, the liquid crystal display is filled with the liquid crystal display, and the liquid crystal display of the present embodiment is completed after sealing. In the structure of the liquid crystal display device of the present embodiment, the TFT-LCD active array substrate portion comprises a substrate 〇 on which parallel gate lines 3〇〇, 3〇1 and parallel data lines are formed. 401, and the gate lines 30 0, 3〇1 and the line 4 0 0, 4 0 1 are perpendicularly intersected. Forming a halogen region 3 〇6 between the adjacent gate lines 3 〇〇, 3 〇丨 and the adjacent greedy lines 4 0 0, 4 0 1 , and forming a transistor region in the pixel region 3 〇 6 3 1 0, the source 3 1 6 is electrically connected to the data line 4 0 〇. A halogen electrode is formed above the halogen region 306. The color filter portion includes a substrate 〇 on which a black matrix 701, color filter elements 702, 70 3, 74, a flat layer 70 5, and a patterned halogen electrode layer 70 6 are formed. The pattern area 70 7 is composed of a plurality of strip-shaped regions, and after being aligned and packaged through the substrate, overlaps with the position of the data lines 400 and 401 on the TFT-LCI active array substrate, and the strips are separated. The portion of the area corresponds exactly to the stock line of the source-drain region 3 1〇 on the TFT-LCD active array substrate. As described above, the structure and the manufacturing method of the liquid crystal display of the present invention are characterized in that the pixel electrode on the side of the color filter substrate is patterned to partially thinen the pixel electrode above the data line of the TFT substrate or Remove to reduce '^'
1261717 五、發明說明(ίο) 彩色濾光片基板之畫素電極與TFT基板之資料線兩者間的 的耦合電容,進而可降低串音效應、改善顯示的晝面品 質,達到提升顯示器良率及性能的功效。 雖然本發明已以較佳實施例揭露如上,然其並非用以 限定本發明,任何熟習此技藝者,在不脫離本發明之精神 和範圍内,當可作些許之更動與潤飾,因此本發明之保護 範圍當視後附之申請專利範圍所界定者為準。1261717 V. DESCRIPTION OF THE INVENTION (ίο) The coupling capacitance between the pixel electrode of the color filter substrate and the data line of the TFT substrate, thereby reducing the crosstalk effect, improving the quality of the displayed surface, and improving the display yield. And the performance of the performance. While the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application.
twf(nl):P91169;Renee.ptd 第14頁 1261717 圖式簡單說明 第1圖係顯示習知TFT-LCD主動陣列基板基板的上視 圖。 第2圖係為沿第1圖中線段I - I剖切所得剖面圖。 第3圖係顯示沿第1圖中線段Π - Π剖切所得剖面圖。 第4圖顯示一習知彩色濾光片的結構。 第5圖顯示第1圖與第3圖之基板組合後之面板,沿第1 圖中線段Π - Π剖切所得剖面圖。 第6A〜6D圖係顯示本發明實施例TFT-LCD主動陣列基板 製作流程之上視圖。 第7A〜7K圖係顯示本發明實施例中彩色濾光片的製 程。 符號說明 0、0 ’、1 0 1、2 0 1 〜基板; 1 0 8、3 0 0、3 0 1〜閘極線; 1 0 4、4 0 0、4 0 1 資料線; 1 0 7、3 0 5〜絕緣層; 3 0 6〜晝素區; ❿ 3 0 7〜接觸孔; 105、801〜晝素電極; 310〜電晶體區, 1 0 8、3 1 2〜閘極; 1 0 6〜通道層; 313 〜η+α-Si 層;Twf(nl):P91169;Renee.ptd Page 14 1261717 Schematic description of the drawings Fig. 1 is a top view showing a conventional TFT-LCD active array substrate. Fig. 2 is a cross-sectional view taken along line I - I in Fig. 1. Figure 3 is a cross-sectional view taken along line Π - Π in Figure 1. Figure 4 shows the structure of a conventional color filter. Fig. 5 is a cross-sectional view showing the panel after the combination of the substrates of Figs. 1 and 3, taken along the line Π - Π in Fig. 1. 6A to 6D are views showing a top view of the fabrication process of the TFT-LCD active array substrate of the embodiment of the present invention. The 7A to 7K drawings show the process of the color filter in the embodiment of the present invention. Symbol Description 0, 0 ', 1 0 1 , 2 0 1 ~ substrate; 1 0 8, 3 0 0, 3 0 1 ~ gate line; 1 0 4, 4 0 0, 4 0 1 data line; 1 0 7 3 0 5 ~ insulating layer; 3 0 6 ~ halogen region; ❿ 3 0 7~ contact hole; 105, 801 ~ halogen electrode; 310 ~ transistor region, 1 0 8 , 3 1 2 ~ gate; 0 6~ channel layer; 313 ~ η + α-Si layer;
0773-9242twf(nl);P91169;Renee.ptd 第15頁0773-9242twf(nl);P91169;Renee.ptd第15页
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