1260790 九、發明說明： 【發明所屬之技術領域】 本發明係有關-種影像_結構，特別是有關_種體積短小、爲平化 且可過濾紅外光線之膠膜式影像感測晶片封裝結構。 【先前技術】 按，影像感測科技愈來愈進步，如數位照相機及指紋辨識器等電子產 馨品’如習知感測晶片封裝結構，其係在基板上安裝—感測晶片，將一凸緣 層係設於基板上且位於制晶片關，且與基板形成凹槽，複數條引 線電連接感測晶片與基板’凸緣層上以黏合方式設置—透明板，透明板將 凹槽封閉，使基板、透明板及凸緣層形成—密閉空間，即完成感測晶片之 封裝。，然而現今此種感測晶片職結構之_己係無法再扁平化，原因在 於感測晶片尺寸必需配合影像成像之距離，而且此種感測晶片封裝結構係 利用折射或繞射原理而成像，使得影像無法丨··丨呈現，並且此影像經由折 # 射或繞射過程會造成影像會衰減及失真等缺陷，進而使此影像之解析度無 法提高，另外因透明板之材質係為玻璃，因此不能有效降低厚度及成本， 且在抑制紅外光的部份目前也採用鍍膜方式以及混入玻璃内，但前者易損 壞後者因成本較而；因此如何突破此瓶頸係目前最大的困擾。 有鑑於此，本發明係針對上述之問題，提出一種膠膜式影像感測晶片 封裝結構，以有效解決上述習知困擾。 1260790 【發明内容】 本發明之主要目的，係在提供一種膠膜式影像感測晶片封裝結構，利 用透明膠膜層及保護層取代習知技術的玻璃，進而降低封裝結構高产及材 料成本。 本發明之另一目的·，係在提供一種膠膜式影像感測晶片封骏結構，藉 由在透明膠膜層及保護層内摻入奈米大小的銻錫氧化物（AT〇)，提供過濾紅 外光線而防止干擾產生。 • 根據本發明，一種膠膜式影像感測晶片封裝結構，包括有一設有電路 層之基板，在基板上設置一感測晶片，並使此感測晶片與電路層電性連接， 再利用壓模方式將感測晶片周邊及電路層圍住並形成_凹槽，使感測晶片 表面顯露在凹_，再將—透明襲層填充在凹_並掩蓋感測晶片，最 後在透明膠顯及封裝層上設置—保護層，其中透明顧層或保護層至少 其中之一摻雜有一過濾粒子，用以產生過濾紅外光之效用。 底下藉由具體實施例配合所附的圖式詳加說明，當更容易瞭解本發明 • 之目的、技術内容、特點及其所達成之功效。 【實施方式】 、· 本發明係一種膠膜式影像感測晶片封裝結構，包括有一基板1〇，此基 板10 α又有電路層12，在基板10上設有一感測晶片μ，此感測晶片η 的型式係為電荷_合元件（Charge-Coupled Device，CCD)及互補式金屬 氧化半導體（CMOS)其中之—者，且利用打線或覆晶方式將電路層12與感 測晶片14電性連接，接著利用壓模方式將一封裝層16設在電路層12上並 ，將感測晶片14周邊圍住形成-第-凹槽18，使感測晶片14表面顯露出在 1260790 第一凹槽18内，此封裝 ^ " “係為不透光的環氧樹脂。在感測晶片 14上設置一透明膠膜声州， 乏' Γρ , . . , Λ S Μ㈣層2G之材質係為聚酰亞胺 ⑽㈣㈣），最後在透明膠刚及封裝層16上設置—材剛氧 樹脂之保護層22 ’本案特點在於透日聰層2_護層22内摻雜有一過 遽粒子（财未示），树蝴峨之_，此過·子係為録錫氧 化物（Antimony Doped Tin Oxide，AW、4、s #1260790 IX. Description of the Invention: [Technical Field] The present invention relates to an image-type structure, and in particular to a film-type image sensing chip package structure which is short in size, flattened and can filter infrared light. [Prior Art] Press, image sensing technology is getting more and more advanced, such as electronic cameras such as digital cameras and fingerprint readers, such as the conventional sensing chip package structure, which is mounted on the substrate - the sensing chip, one will The flange layer is disposed on the substrate and is located at the wafer, and forms a groove with the substrate. The plurality of leads are electrically connected to the sensing wafer and the substrate 'flange layer is adhesively disposed to be transparent—the transparent plate closes the groove The substrate, the transparent plate and the flange layer are formed into a sealed space, that is, the package of the sensing wafer is completed. However, the current structure of the sensing wafer structure cannot be flattened because the sensing chip size must match the imaging imaging distance, and the sensing chip packaging structure is imaged by the principle of refraction or diffraction. The image cannot be rendered, and the image may be attenuated and distorted by the folding or diffraction process, so that the resolution of the image cannot be improved, and the material of the transparent plate is glass. Therefore, the thickness and cost cannot be effectively reduced, and the part that suppresses the infrared light is currently coated and mixed into the glass, but the former is easy to damage the latter because of the cost; therefore, how to break through this bottleneck is the biggest problem at present. In view of the above, the present invention is directed to the above problems, and provides a film-type image sensing wafer package structure to effectively solve the above-mentioned conventional problems. 1260790 SUMMARY OF THE INVENTION The main object of the present invention is to provide a film-type image sensing chip package structure, which uses a transparent film layer and a protective layer to replace the glass of the prior art, thereby reducing the high yield of the package structure and the material cost. Another object of the present invention is to provide a film-type image sensing wafer sealing structure by incorporating nanometer-sized antimony tin oxide (AT〇) in a transparent adhesive film layer and a protective layer. Filter infrared light to prevent interference. According to the present invention, a film image sensing chip package structure includes a substrate provided with a circuit layer, a sensing wafer is disposed on the substrate, and the sensing wafer is electrically connected to the circuit layer, and then the voltage is utilized. The mode surrounds the sensing wafer periphery and the circuit layer and forms a recess, so that the surface of the sensing wafer is exposed to the recess, and then the transparent layer is filled in the recess and masks the sensing wafer, and finally the transparent adhesive is displayed. A protective layer is disposed on the encapsulation layer, wherein at least one of the transparent layer or the protective layer is doped with a filter particle for generating the effect of filtering infrared light. The purpose, technical content, features, and effects achieved by the present invention are more readily understood by the detailed description of the embodiments and the accompanying drawings. [Embodiment] The present invention is a film-type image sensing chip package structure including a substrate 1 又, the substrate 10 α has a circuit layer 12, and a sensing wafer μ is disposed on the substrate 10, and the sensing is performed. The type of the wafer η is a charge-coupled device (CCD) and a complementary metal oxide semiconductor (CMOS), and the circuit layer 12 and the sensing wafer 14 are electrically connected by wire bonding or flip chip. Connecting, then applying a package layer 16 on the circuit layer 12 by stamping, and surrounding the sensing wafer 14 to form the ---groove 18, so that the surface of the sensing wafer 14 is exposed in the first groove of 1260790 In 18, this package ^ " "is an opaque epoxy resin. A transparent film is placed on the sensing wafer 14 to sound state, lacking ' Γ ρ, . . , Λ S Μ (four) layer 2G material is poly The imide (10) (four) (four)), and finally the protective layer 22 of the corundo-oxygen resin is disposed on the transparent adhesive tape and the encapsulating layer 16. The present invention is characterized in that the pericardium layer 2_the protective layer 22 is doped with an antimony particle. ), the tree 峨 _, this is a sub-system is recorded tin oxide (Antimony Dope d Tin Oxide, AW, 4, s #
Xlde _或是其他有抑制紅外光之材料，如 此即完成此封裝結構的說明。 此外，當此封裝結構使用時可在封裝層14周圍且在基板1〇上設有一 輔助光源24,如第二圖所示，用以補充感測晶片叫感測時不足的光線， 此輔助光源24係為發光二極體或燈泡，此輔助光源％可同時與感測晶片 14設置，並在設置封裝層16時在此輔助光源％圍住形成—第二凹槽％， 靠近感測晶片14的第二凹槽26槽壁呈現傾斜，且在此第二凹槽沈填充入 透明膠膜層2G，最後同樣在透明顧層2Q及封裝層16上設置保護層。 另外設置透明膠膜層20的方法有二種，請同時參閱第一圖及第三圖所 示，首先第-種方式係在-含有複數_晶片14的晶圓上先設置透明膠膜 層20即步驟S1G，接著進行步驟S12，將此晶圓進行切單成複數感測晶片 14，以此感測晶片14進行封裝步驟S14，依序為打線或覆晶（電性連接）、 設置封裝層16及設魏護層22等，完錢即成麟裝結構。而第二種的 方式，首先進行步驟S16就是先將晶圓切單為複數感測晶片14，在進行完 封裝過程中的打線或覆晶步驟S18後，再將透明膠膜層20設置在感測晶片 14上即步驟S20，之後再完成後續的封裝步驟S22，如封裝層16及保護層 1260790 22的設置’以完成此封裝結構。 本發明利用透明膠膜層20及保護層22取代習知技術的玻璃，進而降 低封裝結構高度及㈣成本。而且藉由在透霄膜層2()祕護層&内推 入奈米大小的錄錫氧化物(AT0)或是其他有抑制红外光之材料，提供過遽紅 外光線而防止干擾產生，取代了習知的濾光膜。Xlde _ or other materials that suppress infrared light, thus completing the description of this package structure. In addition, when the package structure is used, an auxiliary light source 24 can be disposed around the package layer 14 and on the substrate 1 , as shown in the second figure, to supplement the sensed light when the wafer is called sensing. The 24 series is a light-emitting diode or a bulb, and the auxiliary light source % can be disposed simultaneously with the sensing wafer 14 , and when the packaging layer 16 is disposed, the auxiliary light source % surrounds the formation - the second groove %, close to the sensing wafer 14 The groove wall of the second groove 26 is inclined, and the second groove is filled into the transparent film layer 2G, and finally a protective layer is also disposed on the transparent layer 2Q and the package layer 16. There are two methods for providing the transparent adhesive film layer 20, please refer to the first and third figures at the same time. First, the first method is to first provide a transparent adhesive film layer 20 on the wafer containing the plural-wafer 14. That is, step S1G, and then proceeding to step S12, the wafer is singulated into a plurality of sensing wafers 14, and the sensing wafer 14 is subjected to a packaging step S14, which is followed by wire bonding or flip chip (electrical connection), and an encapsulation layer is provided. 16 and set up the Wei sheath 22, etc., the money will become a structure. In the second method, first step S16 is to first sing the wafer into a plurality of sensing wafers 14, and after performing the wire bonding or flip chip step S18 in the packaging process, the transparent film layer 20 is set in the sense. The test wafer 14 is step S20, and then the subsequent packaging step S22, such as the setting of the encapsulation layer 16 and the protective layer 1260790 22, is completed to complete the package structure. The present invention replaces the glass of the prior art with the transparent adhesive film layer 20 and the protective layer 22, thereby reducing the height of the package structure and (4) the cost. Moreover, by pushing a nanometer-sized tin oxide (AT0) or other material that suppresses infrared light in the barrier layer 2 (), it provides infrared light to prevent interference. It replaces the conventional filter film.
仍應包含在以下 以上所述係藉由實施例說明本發明之特點，其目的在使熟習該技術者 能暸解本發明之内容並據以實施，轉限定本發明之補顧，故，凡其 他未脫離本發明所揭示之精神所完成之等效修飾戋修改 ’、 所述之申請專利範圍中。 【圖式簡單說明】 第一圖為本發明之結構剖面示意圖。 第二圖為本發明設置_光源之㈣示意圖。 第三圖為本發明之設置透明膠膜層的流程圖。 φ 【主要元件符號說明】 10 基板 12 電路層 14 感測晶片 16 封裝層 18 第一凹槽 20 透明膠膜層 22 保護層 24 輔助光源 26 第二凹槽The features of the present invention will be described by the following examples, which are intended to enable those skilled in the art to understand the invention and practice the invention. Equivalent modifications, modifications, and claims are made without departing from the spirit of the invention. BRIEF DESCRIPTION OF THE DRAWINGS The first figure is a schematic cross-sectional view of the structure of the present invention. The second figure is a schematic diagram of (4) of the setting_light source of the present invention. The third figure is a flow chart of setting a transparent film layer of the present invention. Φ [Main component symbol description] 10 substrate 12 circuit layer 14 sensing wafer 16 encapsulation layer 18 first groove 20 transparent film layer 22 protective layer 24 auxiliary light source 26 second groove