[go: up one dir, main page]

TWI256733B - Display panel with polysilicon layer and method of fabricating the same - Google Patents

Display panel with polysilicon layer and method of fabricating the same

Info

Publication number
TWI256733B
TWI256733B TW94135278A TW94135278A TWI256733B TW I256733 B TWI256733 B TW I256733B TW 94135278 A TW94135278 A TW 94135278A TW 94135278 A TW94135278 A TW 94135278A TW I256733 B TWI256733 B TW I256733B
Authority
TW
Taiwan
Prior art keywords
display panel
poly
fabricating
substrate
layer
Prior art date
Application number
TW94135278A
Other languages
Chinese (zh)
Other versions
TW200715560A (en
Inventor
Chih-Wei Chao
Original Assignee
Au Optronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Au Optronics Corp filed Critical Au Optronics Corp
Priority to TW94135278A priority Critical patent/TWI256733B/en
Application granted granted Critical
Publication of TWI256733B publication Critical patent/TWI256733B/en
Publication of TW200715560A publication Critical patent/TW200715560A/en

Links

Landscapes

  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)

Abstract

A display panel comprises a substrate and a plurality of thin film transistors (TFTs) formed on the substrate. The substrate has a displaying region and a circuit driving region. These TFTs includes a first TFT set positioned at the circuit driving region, and a second TFT set positioned at the displaying region. The first TFT set comprises a first polysilicon (Poly-Si) layer crystallized by metal induced lateral crystallization (MILC). The second TFT set comprises a second Poly-Si layer, and a portion of the second Poly-Si layer is crystallized by MILC while the others by solid phase crystallization (SPC).
TW94135278A 2005-10-07 2005-10-07 Display panel with polysilicon layer and method of fabricating the same TWI256733B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94135278A TWI256733B (en) 2005-10-07 2005-10-07 Display panel with polysilicon layer and method of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94135278A TWI256733B (en) 2005-10-07 2005-10-07 Display panel with polysilicon layer and method of fabricating the same

Publications (2)

Publication Number Publication Date
TWI256733B true TWI256733B (en) 2006-06-11
TW200715560A TW200715560A (en) 2007-04-16

Family

ID=37614764

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94135278A TWI256733B (en) 2005-10-07 2005-10-07 Display panel with polysilicon layer and method of fabricating the same

Country Status (1)

Country Link
TW (1) TWI256733B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI381451B (en) * 2007-05-31 2013-01-01 三星顯示器有限公司 Polycrystalline germanium layer manufacturing method, TFT prepared thereby, TFT manufacturing method and organic light emitting diode display device therewith

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI381451B (en) * 2007-05-31 2013-01-01 三星顯示器有限公司 Polycrystalline germanium layer manufacturing method, TFT prepared thereby, TFT manufacturing method and organic light emitting diode display device therewith

Also Published As

Publication number Publication date
TW200715560A (en) 2007-04-16

Similar Documents

Publication Publication Date Title
JP2010003910A (en) Display element
US7551255B2 (en) Organic light emitting display device
WO2003088327A3 (en) Deposition of silicon layers for active matrix liquid crystal displays
JP5553327B2 (en) Thin film transistor manufacturing method and organic light emitting device display device having thin film transistor obtained by the manufacturing method
EP2006903A3 (en) Method of fabricating polycrystalline silicon, TFT fabricated using the same, method of fabricating the TFT, and organic light emitting diode display device including the TFT
TW200603070A (en) Thin-film transistor circuit, design method for thin-film transistor, design program for thin-film transistor circuit, design program recording medium, design library database, and display device
EP2869329B1 (en) Method for manufacturing a thin film transistor
JP2008103609A (en) Image display device and manufacturing method thereof
TW200608576A (en) Method for fabricating organic thin film transistor and method for fabricating liquid crystal display device using the same
TWI389211B (en) Image display system and method of manufacturing same
TW200601572A (en) Liquid crystal display and thin film transistor array panel therefor
CN101924070A (en) An active matrix organic light emitting display and its manufacturing method
TW200513149A (en) Transistor substrate, display device, and method for manufacture
RU2011115083A (en) BASIC BOARD, METHOD FOR PRODUCING A BASIC BOARD AND DEVICE SUPPORT
TW200510851A (en) Array substrate, liquid crystal display, and method of manufacturing array substrate
TWI256733B (en) Display panel with polysilicon layer and method of fabricating the same
TW200633228A (en) Display device and thin film transistor array panel for display device and manufacturing method thereof
TW200730981A (en) Thin film transistor array panel for liquid crystal display and manufacturing method thereof
TW200719016A (en) Display panel and method for fabricating the same
US8497970B2 (en) Array structure having thin film transistor and connecting structure for gate line charging and manufacturing method thereof
TW200601570A (en) Liquid crystal display panel and manufacturing method thereof
TW200628876A (en) Liquid crystal display
TW200620430A (en) Method of selective laser crystallization and display panel fabricated by using the same
US20120080684A1 (en) Thin film transistor and flat panel display device including the same
US9515103B2 (en) LTPS TFT substrate structure and method of forming the same

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees