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TWI253545B - Imaging apparatus - Google Patents

Imaging apparatus Download PDF

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Publication number
TWI253545B
TWI253545B TW91134773A TW91134773A TWI253545B TW I253545 B TWI253545 B TW I253545B TW 91134773 A TW91134773 A TW 91134773A TW 91134773 A TW91134773 A TW 91134773A TW I253545 B TWI253545 B TW I253545B
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Taiwan
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projection
patterned
substrate
radiation
projection beam
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TW91134773A
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Chinese (zh)
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TW200305782A (en
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Der Mast Karel Diederick Van
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Asml Netherlands Bv
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Abstract

Providing grayscales by simultaneously projecting two or more patterned projection beams onto the substrate, each of which has a different pattern and a different intensity.

Description

I253545 ⑴ 玖、發明說明 (發明說明應敘明··發明所屬之技術領域、先前技術、内容、實施方式及圖式簡單說明) 技術領域 本發明與一種微影投影裝置有關,其包括: 一輻射系統,用於提供一第一輻射投影光束; 弟叮程式圖案化構件’用以依據一第一所需圖案使該 第一投影光束圖案化; -一基板台,用以支撐一基板; :投影系統,用以將形成圖案的該第一投影光束投影在 該基板的一目標部分上。 此處所用術語「可程式圖案化構件」,應廣義解釋為可用 以賦予進入之輻射光束一圖案化之斷面的構件,該圖案化 之斷面係對應於需建立於基板之一目標部份的一圖案;本 〇中亦可使用術語「光閥」及「空間光調變器(s_ail ==LM匕一般而言,該圖案係與建立於目標部 詳:、肖疋功旎層有關,諸如-積體電路或其他裝 置(砰見下文)。此類圖案化構件的例子包括·· -一可程式鏡面陣列。哕插 ^ J °亥種t置的一個例子為一矩陣可定 ^ ,/、具有一黏彈性控制展κ C: ^ ^ 、 彳制層及一反射表面。此種裝置I253545 (1) 玖, 发明说明(Technical Description, Description of the Invention, Technical Field, Prior Art, Content, Embodiment, and Schematic Description) FIELD OF THE INVENTION The present invention relates to a lithographic projection apparatus, including: a system for providing a first radiation projection beam; a program patterning member for patterning the first projection beam according to a first desired pattern; a substrate stage for supporting a substrate; a system for projecting the patterned first projection beam onto a target portion of the substrate. The term "programmable patterned member" as used herein shall be interpreted broadly to mean a member that is used to impart a patterned cross-section of the incoming radiation beam, the patterned cross-section corresponding to a target portion to be built on the substrate. a pattern; the term "light valve" and "space light modulator" (s_ail ==LM匕) can also be used in this book. Generally speaking, the pattern is related to the establishment of the target part: Such as - integrated circuits or other devices (see below). Examples of such patterned components include a · a programmable mirror array. An example of a ^ ^ ° ° ° t set is a matrix can be set ^ /, has a viscoelastic control exhibition κ C: ^ ^, tantalum layer and a reflective surface.

、土本原理為(例如)該反射表 A 為婊射# ^ $已疋址區域反射入射光 马、、凡射先,而未定址區域丨 ϋ —it ^ ^ ^ Τ Α ^ —、、入射光為非繞射光。利用 週田/慮鏡可自該反射光走 該繞射光,如此兮光走? 私出該非繞射光,僅擋下 宰糊幸:先束即可依該矩陣可定址表面的定址圖 茶成馮圖案化。可程式 口 使用一彳U PAM , 陣列的一項替代性具體實施例 1 W 破小鏡面的矩陣配置, 稽由施加一適當的局部電場 (2) 1253545 ic ^ Μ t Ig m m # (piezoelectric actuation means) > ^ |-面可分別繞-軸線傾斜。同樣地,該類鏡面為可定址: 陣,使得定址鏡面以不同方向反射人射的輻射光束至未定 址鏡面;如此,即可根據該等矩陣可定址鏡面的定址圖案 使反射光束圖案化。可使用適當的電子構件,以執行所需 的矩陣定址。在上述的兩種狀況下,該可程式圖案化構件 皆可包括-或多個可程式鏡面陣列。本文所述鏡面陣列的 詳細資料,請參閱(例如)美國專㈣5,296,891及仍 5?523?193APCT#^J ^ 98/38597^ WO 98/33096 」此處以提及方式併入本文中。就可程式鏡面陣列而言, 該支擇結構可以(例如卜框㈣台面方式具體化,且視需要 可為固定或移動式。 可私式LCD陣列。此種構造的實例可見於美國專利案 號US 5,229,872中,此處以提及方式併入本文中。如上所述 ’此種狀況的支撐結構可以(例如)_框架或台面方式具體化 ,並視需要可為固定或移動式。 基於簡化的目的’本文其餘部份將在特定位置專門探討 有關逑罩及遮罩台的貫例、然而,此類實例中所探討的通 用原理應適用於上述較廣域的圖案化構件中。 先前技術 被影投影裝置可用於(例如)積體電路(Ic)的製造上。在此 種丨月况中5该可程式圖案化構件可產生相關於該I。中單一 層的甩路圖案’並可將此圖案成像於已塗佈一層輻射感應 材料(抗蝕劑·’ resist)之一基板(矽晶圓)上的目標部分(如包 (3) (3)!253545 括-或多個晶模(die))。一般而言,單一晶圓可包括眾多相 鄰目標部分所構成之網路,它們將依次由投影系統逐個照 射在本k置中,利用遮罩台上的遮罩進行圖案化,可區 刀成兩種不同形式的機器。在—種微影投影裝置令,—趟 動作將整個遮罩圖案暴露於目標部分上,讓每4標部分 都照射到’此種裝置-般稱為晶圓步進機(waferstep㈣。 在另一種-般稱為步進掃描襄置(step_an“ean卿㈣㈣ 的可供砥擇裝置中’於投影光束下以一指定參考方向(「掃 七田」方向)逐步掃描遮罩圖案以照射每一目標部分,並同步 :與此方向平行同向或平行反向掃描基板台,因通常此投 影系統具有—放大倍_(通常<υ,故掃描基板台的速率v 將為掃描遮罩台速率賴倍。有關上述微影裝置的進一步 資訊可於(例如)USM46,792中收集到,本*中以提及方式 併入。 在使用微影投影裝置的製造方法中,於至少部分由一層 輪射感應材料(抗蝕劑)覆蓋的基板上成像一圖案(例如在二 遮罩中的圖案)。在此成像步驟之前,該基板可經各種程序 處理,例如打底(priming)、抗姓劑塗佈及軟供(_ 曝光之後,該基板可接受其他處理,例如曝光後洪乾 (㈣-exposure bake’ PEB)、顯影、硬烘(hardbake)及測量/ 檢查成像之特徵。這—連串的程序是作為圖案化—裝置(如 1C)之個別裝置層的基礎。接著,此—圖案化層可再經過各 種程序,例如飯刻、離子植入(換雜)、金屬電錄、氧化、化 學機械研磨等’所有步驟皆為各層表面處理所需。如果需 1253545The principle of the soil is (for example) the reflection table A is 婊射# ^ $ the address area reflects the incident light horse, the first shot, and the unaddressed area 丨ϋ -it ^ ^ ^ Τ Α ^ —, incident Light is non-diffracting light. Using the Zhou Tian/Conscious Mirror, you can take the diffracted light from the reflected light, so go away? Privately out the non-refractive light, only block the paste, but the first beam can be patterned according to the addressable surface of the matrix. The programmable port uses a 彳U PAM, an alternative embodiment of the array. 1 W breaks the mirror configuration of the small mirror, and applies a suitable local electric field. (2) 1253545 ic ^ Μ t Ig mm # (piezoelectric activated means ) > ^ |- faces can be tilted around the - axis respectively. Similarly, the mirrors are addressable: arrays that cause the addressed mirror to reflect the beam of radiation from the human being to the unaddressed mirror in different directions; thus, the reflected beam can be patterned according to the addressing pattern of the array addressable mirrors. Appropriate electronic components can be used to perform the required matrix addressing. In both of the above cases, the programmable patterning member can include - or a plurality of programmable mirror arrays. For a detailed description of the mirror arrays described herein, see, for example, U.S. Patent No. 5,296,891 and still U.S. Pat. No. 5,523, 193 APCT. In the case of a programmable mirror array, the selective structure can be embodied, for example, in a mesa (four) mesa manner, and can be fixed or mobile as needed. A private LCD array. Examples of such configurations can be found in U.S. Patent No. US 5,229,872, hereby incorporated by reference herein in its entirety, the same as the above---the support structure of this condition can be embodied, for example, in a frame or mesa manner, and can be fixed or mobile as desired. 'The rest of this article will be devoted to specific examples of enamel and masking stations at specific locations. However, the general principles discussed in such examples should be applied to the wider-area patterned components described above. The projection device can be used, for example, in the manufacture of an integrated circuit (Ic). In this case, the programmable patterning member can generate a routing pattern associated with a single layer of the I. The pattern is imaged on a target portion (such as a package (3) (3)! 253545- or a plurality of crystal patterns (die) that has been coated with a layer of radiation-sensitive material (resist · resist) )). Generally speaking A single wafer may include a network of a plurality of adjacent target portions, which will be sequentially illuminated by the projection system in the present, and patterned by using a mask on the mask table, which can be formed into two different forms. In the case of a lithographic projection device, the 趟 action exposes the entire mask pattern to the target portion, and each of the four standard portions is illuminated by a device called a wafer stepper (four). In another alternative device, commonly referred to as a step-scan device (step_an "ean Qing (4) (4)", the mask pattern is progressively scanned under a projection beam in a specified reference direction ("sweeping seven fields" direction) to illuminate each a target portion, and synchronized: the substrate table is scanned in the same direction or parallel in parallel with the direction, because usually the projection system has - magnification _ (usually < υ, so the rate v of the scanning substrate table will be the scanning mask table Further information on the lithographic apparatus described above can be found, for example, in USM 46,792, which is incorporated herein by reference. In the fabrication method using a lithographic projection apparatus, at least in part wheel A pattern (eg, a pattern in the two masks) is imaged on the substrate covered by the inductive material (resist). Prior to this imaging step, the substrate can be processed by various procedures, such as priming, anti-surname application. Cloth and soft supply (_ After exposure, the substrate can be subjected to other treatments such as post-exposure bake 'PEB), development, hard bake and measurement/inspection imaging features. The program is the basis for the individual device layers of the patterning device (eg 1C). Next, the patterned layer can be subjected to various procedures such as rice carving, ion implantation (replacement), metal lithography, oxidation, chemistry. Mechanical grinding, etc. 'all steps are required for the surface treatment of each layer. If you need 1253545

⑷ 要許多層,則必須在每一新層重覆整個程序或其變化步驟 。最後,在該基板(晶圓)上將呈現一系列的裝置p接著,將 會利用諸如切割(dicing)或鋸切(sawing)的一種技術分割這些 裝置,之後可將個別裝置裝載於一載架(carrier)上、連接至 梢(pin)等。有關此類程序的進一步資訊可由(例如)Peter van(4) For many layers, the entire program or its changing steps must be repeated at each new level. Finally, a series of devices will be presented on the substrate (wafer). Next, these devices will be segmented using a technique such as dicing or sawing, after which the individual devices can be loaded onto a carrier. (carrier), connected to a pin or the like. Further information about such procedures can be obtained, for example, by Peter van

Zant所著「微晶片製造··半導體處理指南(Micr〇chipZant's "Microchip Manufacturing · Semiconductor Processing Guide (Micr〇chip

Fabrication; A Practical Guide to Semiconductor ProcessingFabrication; A Practical Guide to Semiconductor Processing

Third Edition, McGraw Hill Publishing Co,, 1997, ISBN 0,07-067250-4)」一書中獲得,本文中以提及方式併入。 為簡化起見,以下將稱投影系統為「透鏡」;然而,必須 將此術語作廣義解釋以包括各種投影系統,例如,包含折 射光學 '反射光學及反折射(catadi〇ptric)的系統q該輻射系 統亦可包括依據其中任一設計種類操作,用來導引、塑造 或控制輻射投影光束的元件,此種元件亦可於下文中統稱 或個別稱為「透鏡」。另外,此微影裝置可能是一種具有兩 個以上基板台(及/或兩個以上遮罩台)的形式。在此種r多 平台」裝f申,其額外台面可平行使用,《可在其他—或 多個台面進行曝光時,於—或多個台面上執行準備步驟。 又平口 U衫I置在(例如)us 5 969,441及彻9謂州中均 有說明’此處以提及方式併入本文中。 如別述序言中的成像裝詈二 口口、 t 衣置目則係用來製作遮罩寫入機 态,如瑞典的Micronic公司所屮口 | _ 斤出口口者。廷種遮罩可用於一微 心才又衫I置中,該裝置可 Η 6^7 ^ a - 旻在一感光基板(例如塗佈抗蝕 d的矽日日圓)上成像遮罩圖 口木以作為生產積體裝置(如積體 1253545 电路(1C))的更廣義製程的—部分。這種遮罩寫人機器中的 基板為(例如)—種金屬電鑛板(如—塗鉻石英或%板),即 已塗佈一層抗蝕劑。此種遮罩寫入機器的構想是使高产 複雜)遮罩圖案的電子播案,以矩陣定址該圖案化構件,: ㈣圖案化構件再將—圖案化輕射光束轉移到該遮罩板的 J邛77上。藉由根據該電子檔案改變圖案化光束中的圖 案’並同時移動光束經過該遮罩板的整個表面(以掃描或步 進動作)’其最後完成的遮罩圖案即成為該圖案化光束的子 圖案組合(並排)的總和。基於這個種理由,此種機器有時稱 為「直接寫入」機。 雖然上述機器至今只用於製造遮罩,但至少原則上,其 亦可用來製造半導體及其他積體裝置。在此種情況下,該 遮罩板將由(例如)一 Si晶圓所取代,且晶圓上由圖案化構件 所產生的圖案將對應於一晶模圖案陣列。然而,此種應用 的主要缺點為其產量很低:對照於目前直接寫入機的預期 產里約為每日一片基板左右,一當前技術水準之微影投影 裝置的產量約為每小時100片基板左右。僅管如此,從事此 種應用仍有其好處··例如,若是在鑄造廠中製作小批量的 特定積體裝置(如專用ASIC)的情況,忍受上述機器的慢速 直接寫入程序要比為此小批量承擔製造特殊遮罩的高昂成 本(一般約為50至1000美元)更具吸引力。這種選擇目前只對 甚小批量的極昂貴裝置有吸引力;然而,如果直接寫入機 的產量能提昇的話,會更具有吸引力。本文所述傳統微影 裝置的詳細資料可參閱美國專利6,〇46,792,其以提及方式 1253545Obtained in the book Third Edition, McGraw Hill Publishing Co,, 1997, ISBN 0, 07-067250-4), incorporated herein by reference. For the sake of simplicity, the projection system will hereinafter be referred to as a "lens"; however, this term must be interpreted broadly to include various projection systems, for example, systems containing refractive optics 'reflective optics and catadiopric ptrics. The radiation system may also include elements that operate in accordance with any of the design categories to direct, shape, or control the radiation projection beam, such elements being collectively referred to hereinafter or individually as "lenses." Additionally, the lithography apparatus may be in the form of a substrate having more than two substrates (and/or two or more mask stages). In this type of multi-platform, the additional countertops can be used in parallel. "Preparation steps can be performed on - or on multiple decks when exposure is performed on other - or multiple countertops. Also, the flat-panel U-shirt I is placed in, for example, us 5 969, 441 and the state of the ninth state, and is hereby incorporated by reference. As mentioned in the preface, the imaging device is used to create a mask writing mechanism, such as the Swedish Micronic company's mouthpiece | _ kg outlet. The mask can be used for a micro-center and a shirt, and the device can image the mask on a photosensitive substrate (for example, the day of the day when the resist d is coated). As part of the more general process of producing integrated devices (such as integrated 1253545 circuit (1C)). The substrate in such a mask writer is, for example, a metal plate (e.g., chrome-plated quartz or % plate), i.e., a layer of resist has been applied. The idea of such a mask writing machine is to make a highly productive (complex) masked electronic broadcast, which is addressed in a matrix to the patterned member: (iv) the patterned member transfers the patterned light beam to the mask J邛77. By changing the pattern in the patterned beam according to the electronic file and simultaneously moving the beam through the entire surface of the mask (in scanning or stepping motion), the resulting mask pattern becomes the child of the patterned beam. The sum of the pattern combinations (side by side). For this reason, such machines are sometimes referred to as "direct write" machines. Although the above machines have hitherto only used to make masks, at least in principle, they can also be used to manufacture semiconductors and other integrated devices. In this case, the mask will be replaced by, for example, a Si wafer, and the pattern created by the patterned features on the wafer will correspond to an array of pattern patterns. However, the main disadvantage of this type of application is its low yield: compared to the current production of direct writers, which is about one tablet per day, the production of a current state of the art lithography projection device is about 100 per hour. The substrate is left and right. In spite of this, there are still benefits to such an application. For example, if a small batch of a specific integrated device (such as a dedicated ASIC) is produced in a foundry, it is better to endure the slow direct writing procedure of the above machine. This small batch is more attractive for the high cost of manufacturing special masks (typically around $50 to $1,000). This choice is currently only attractive for very small quantities of extremely expensive devices; however, it would be more attractive if the output of the direct writer would increase. Details of the conventional lithography apparatus described herein can be found in U.S. Patent No. 6, 〇 46, 792, which is incorporated by reference.

併入本文中。 在上述的直接寫入機中,其理想不只產生具有黑色及白 色的圖案(二元圖案),並且也能產生中間的灰色調(灰階) 。在先前技術的機器中,可以各種不同方式達成此種灰階 。例如,在一使用可傾斜鏡面的可程式鏡面陣列 (Programmable Mirror Array ; PMA)中,各鏡面(像素)均可 做成容許在零傾斜及全傾斜之間的中間傾斜(連續或不連 續地)。同樣地,在使用許多以活塞式上下移動(造成此類 鏡面所反射的相干光之相移)之鏡面的一 PMA中,每一鏡 面均可做成谷許在小於全振幅的中間移動,因而使相位可 在〇與7Γ值之間移動。不過,此類先前技術方法的缺點為 需要相當複雜的驅動裝置以移動各鏡面;結果,其操作變 =較緩慢,因而影響產量。另外,此種驅動裝置的製造相 田困難且通常只能以較低的產量生產,因而增加了製造 成本0 發明内容 、本么明的一項目標為減輕這類問題。具體而言,本發明 :員目私為提供如本文開頭所述的一種裝置,該裝置能 W N產1產生灰階’且能以較高產量製造此種裝置。 ^發明的此項及其他目標可藉本文開頭所述之一微影裝 化:盖達成’其特徵為:該裝置進一步包括第二可程式圖案 I件,用以依據一第二所需圖案圖案化該輻射系統之一 弟一投影光束; /又〜系統將該第二圖案化投影光束投影於該基板之該 -10- 1253545Incorporated herein. In the above direct writer, it is desirable to produce not only a pattern having a black color and a white color (binary pattern) but also an intermediate gray tone (gray scale). In prior art machines, such gray levels can be achieved in a variety of different ways. For example, in a Programmable Mirror Array (PMA) using a tiltable mirror, each mirror (pixel) can be made to allow intermediate tilt between zero tilt and full tilt (continuous or discontinuous) . Similarly, in a PMA that uses a plurality of mirrors that move up and down in a piston (causing a phase shift of the coherent light reflected by such a mirror), each mirror can be moved in the middle of less than the full amplitude. The phase can be moved between 〇 and 7Γ. However, a disadvantage of such prior art methods is that a relatively complicated drive is required to move the mirrors; as a result, its operation becomes slower, thus affecting throughput. In addition, the manufacture of such a drive device is difficult and usually only produces at a lower yield, thereby increasing the manufacturing cost. 0 SUMMARY OF THE INVENTION It is an object of the present invention to alleviate such problems. In particular, the present invention is directed to providing a device as described at the outset which is capable of producing a gray scale' and capable of producing such a device at a higher throughput. This and other objects of the invention can be achieved by the lithography described in the opening paragraph: the cover is characterized in that the device further comprises a second programmable pattern I for aligning according to a second desired pattern. One of the radiation systems is a projection beam; and the system projects the second patterned projection beam onto the substrate -10- 1253545

案化投影光束之強度 ⑺ 目標部份;以及 該第一圖案化投影光束與該第二圖 不同。 此種設計的好處,在該裝置可立/ 技衫一灰階圖案於該 基板上母一圖案化投影光束使用不同強度,可 量之圖案化投影光束所能產生 ” “同安 %產生的灰階數目變得更多。使用 ::產生圖木化投影光束的可程式圖案化構件(最好各呈 有更不同的強度),則可產生更多的灰階。 八 可用-光束分割器,以將該輻射源所發出之投影光束分 割成所需數量的投影光束’以照射該可程式圖案化構件。 可安排該等光束分割器之配置,使其以不同強度之投影光 束照射該圖案化構件。此種方案基本上可以不同亮度產生 圖案化投影光束,而不料低彳„彡於該基板上的光束之整 體強度。 p或者,可配置一些可變衰減器以降低投影於該基板上的 光束之強度。可配置此類衰減器以(例如)降低入射於該圖案 化構件上投影光束之強度,且/或可將其置於該圖案化投影 光束的光束路徑上,以直接降低該圖案化投影光束的強度 。因此’即可降低該輻射系統的複雜度。 使用一或多個分開的輻射源,將可產生另一種改變該 圖案化投影光束之強度的方法,製造出不同強度的投影 光束。 視乎各種狀況,可合宜地組合個別圖案化投影光束以構 成一單一圖案化投影光束,並將其投影於該基板之目標部 1253545The intensity of the projected beam (7) the target portion; and the first patterned projection beam is different from the second image. The advantage of this design is that the device can be patterned on the substrate by using a gray scale pattern on the substrate. The projection beam can be produced with different intensity, and the amount of the patterned projection beam can be generated. The number has become more. More gray scales can be produced by using :: to produce a programmable patterning of the projected beam of light (preferably each with a different intensity). Eight available-beam splitters to split the projected beam from the source into a desired number of projected beams' to illuminate the programmable patterning member. The beam splitters can be arranged to illuminate the patterned member with different intensity projection beams. Such a scheme basically produces a patterned projection beam with different brightness, but is less than the overall intensity of the beam on the substrate. p Alternatively, some variable attenuators can be configured to reduce the beam projected onto the substrate. Intensity. Such an attenuator can be configured to, for example, reduce the intensity of the projected beam incident on the patterned member and/or can be placed on the beam path of the patterned projection beam to directly reduce the patterned projection The intensity of the beam. Thus, the complexity of the radiation system can be reduced. The use of one or more separate sources can produce another method of varying the intensity of the patterned projection beam to produce projection beams of different intensities. Depending on various conditions, the individual patterned projection beams may be combined to form a single patterned projection beam and projected onto the target portion of the substrate 1253545.

⑻ 分。其好處為,如此僅需單一的投影系統,從而將該袭置 的成本限制到最低。或者,可獨立地將每一圖案化投影系 、冼u s亥基板之目標部分,以免除將該等圖案化投影光 束組合的一構件。 示了同%將複數個之圖案投影於該基板的目標部分以產 :灰階之外’/亦可使用-或多個可程式圖案化構件,以圖 r tσ亥技Γ光束亚對該基板之相同目標部分實施額外的曝 :投影。n由此種構件’可提供更多的灰階,而不致讓可 表式圖案化構件變得過於龐大。 依據本發明的另一項觀點,其提供·· 一襞置製造方法,其步驟包括: 衣備i >部分被—輕射感應材料層所覆蓋的基板,· 利用一輻射系統提供一第一輻射投影光束; -利用第-可程式圖案化構件賦予該第一投影光束一第一(8) points. The benefit is that only a single projection system is required to minimize the cost of the attack. Alternatively, each of the projected projections, the target portion of the substrate, can be independently patterned to avoid the assembly of the patterned projection beams. Show the same % to project a plurality of patterns on the target portion of the substrate to produce: / outside the gray scale ' / can also use - or a plurality of programmable patterning members, to map the substrate Additional exposures are projected on the same target portion: projection. n Such a component can provide more grayscale without making the spectroscopic patterned component too bulky. According to another aspect of the present invention, there is provided a method for manufacturing a device, the steps comprising: a device i> a portion of a substrate covered by a layer of light-sensitive sensing material, and a first system using a radiation system Radiating the projection beam; - using the first-programmable patterning member to give the first projection beam a first

:忒弟一圖案化之輻射投影光束投影至該輻射感應材料 層之一目標部分, 其特徵為: 賦予該第二投影光束一第 提供一第二輻射投影光束; 提供第二可程式圖案化構件 二圖案式之斷面;以及 U ¥ —圖案㈣射投影光束投影至該㈣感應材料層 之一目標部分; 其中該第 圖案化投影光束與該第二圖案化投影光束具有 -12- (9)J253545 不同的強度。a patterned radiation projection beam is projected onto a target portion of the radiation-inducing material layer, and is characterized in that: the second projection beam is provided with a second radiation projection beam; and the second programmable pattern member is provided. a two-patterned section; and a U ¥ - pattern (four) projecting projection beam projected onto the target portion of the (four) inductive material layer; wherein the first patterned projection beam and the second patterned projection beam have -12- (9) J253545 Different strength.

雖然本文提供使用本但需明白該裝置具有許;二:置製造1C的特定參考, 其用於製造整合式光學系統、6可能用途。例如’可來測圖举、液a Ig _ yr性域記憶體的導引及#木液日日顯不板、薄膜磁頭箄 明白,在此種替代性應用中,任7寻…技術人士應 罩,、「具圓」「一 任何對本文中術語「主光 晶圓 J或「晶模」的使用 十丄、龟里 「 ’ S應考慮分別以較| 遍的術語「遮罩」、「基板Although the present application is provided herein, it is to be understood that the device has a designation; a specific reference for the manufacture of 1C for the manufacture of an integrated optical system, 6 possible uses. For example, 'can be used to measure the graph, the liquid a Ig _ yr domain memory guide and #木液日日显板, thin film head 箄 understand, in this alternative application, any 7 seeking ... technical person should Cover, "rounded" "Any use of the term "main light wafer J or "crystal mold" in this article, the turtle "" S should consider the term "mask" in comparison with the word "," Substrate

及 目標部分」取代 在本文中所使用的術語「輻射 所古剂斗ΑΑ + 」及 光束」可用來包^ 所有型式的電磁輻射,包括砦 ^匕 ,1Q, 匕料外線轄射(如波長為365、24193、157或以⑽者)和刪(遠紫外_,如、… 圍介於5至204),以及 =射*波長輿 子束。 々離子束或電子束之類的粒 實施方式 县體實施存彳1 圖1為依據本發明之_特定具體實施例的微影投影裝置 的原理說明。該裝置包括·· 、 .提供輕射(例如UV賴射)投影光束PB的一輕射系統Εχ、比 ,在此特例中亦包括一輻射源L A ; •一弟-物件台(遮罩台)MT’具有支撐可程式圖案化構件 MA(例如-SLM)的—遮罩支架,並與第_定位構件連接以 相對於項目PL將該可程式圖案化構件精確定位; .一第二物件台(基板台)WT,具有支縣S w(例如淹佈 了抗姓劑的一石夕晶圓)的一基板支架’並與第二定位構件連And the target section" replaces the term "radiation agent" + and "beam" used in this article. It can be used to cover all types of electromagnetic radiation, including wall-mounted, 1Q, and external sources (such as wavelength) 365, 24193, 157 or (10) and delete (far ultraviolet_, such as, ... between 5 and 204), and = radiation * wavelength dice bundle. Particles such as helium ion beam or electron beam Embodiments Embodiments of the present invention Fig. 1 is a schematic illustration of a lithographic projection apparatus according to a specific embodiment of the present invention. The device includes a light-emitting system 提供, ratio, which provides a light-emitting (for example, UV-ray) projection beam PB, and includes a radiation source LA in this special case; • a younger-object table (mask table) The MT' has a mask holder supporting the programmable patterning member MA (for example, -SLM), and is coupled to the first positioning member to accurately position the programmable patterning member with respect to the item PL; a second object table ( Substrate table) WT, which has a substrate holder of the county S w (for example, a stone wafer flooded with anti-surname agent) and is connected to the second positioning member

-13- (10) 1253545-13- (10) 1253545

接以相對於項目PL將該基板精確定位; .一投影系統(厂透鏡」)PL(例如一繞射鏡面群組)以將 程式圖案化構件心的一受照射部份映射於該基板…的― 目標部分C(例如包含一或多個晶模)上。 如此處所述,該裝置係屬一反射型式(如具有—反射 程式圖案化構件)。然而,—般而言,其亦可為(例如)—透 射㈣遺issWe)型式(如包含一透射式可程式圖案化構件 。或者’該裝置可採用另—種圖案化構件,諸如上述 的一可程式LCD陣列。 工 輻射源LA(例如一準分子雷射(excimer心叫)產生一輻 射光束。此光束直接地或在穿過調節構件(諸如一光束擴^ 器Ex)之後,被注入一照射系統(照射器)江中。照射器匕可 包含調整構件AM以設定光束中強度分佈的外徑向範圍及/ 或内徑向範圍(一般分別稱為?-外及?_内)。另外,它一般會 包括其他數種元件,諸如一整合器以和一聚光鏡c〇。如此 ’照射於該可程式圖案化構件MA上的光束pB在其斷面中即 具有一所需的一致性和強度分佈。 於圖1中應注意的疋·輻射源LA可位於微影投影裝置的 外殼中(通常當輻射源LA是一(例如)水銀燈時,即是如此) ,但它亦可與微影投影裝置距離遙遠,其所產生之轄射光 束被導入裝置中(例如依靠適當導引鏡面之助),當轄射源 L A為一準分子雷射時’通常是後面這種狀況。本發明及申 請專利範圍包含這兩種情況。 光束P B隨後照射到支撐於遮罩台]T上的該可程式圖案 -14- (ii) (ii)1253545 發曰I雄明續買 化構件MA。經該可程式圖案化構件μα反射之後,光束PB L過透銃PL,造成光束PB在基板w的一目標部分c上面聚 焦。經由第二定位構件(以及干涉測定(interfer〇metric measudng)構件IF)的幫助,可精確移動基板台资,(例如) ^在光束PB的路上定位不同的目標部分c。同樣地,亦 ^用該第一定位構件使該可程式圖案化構件MA(如在掃描 t)相對於,亥光束⑼之路徑精確定位。可省略該第一定位構 件,此時,即應固定該可程式圖案化構件相對於該光束叩 t位置。一般而言,物件台以^、wt的移動是靠一長行程 杈組(粗略定位)和一短行程模組(精細定位)的幫助實現的 :广二者皆未明確標示於圖1中。然而,若在晶圓步進機的 _。中(相對於步進知描裝置),4罩台MT可能僅連接-短 仃程之傳動裝置(actuat〇r),或為固定。 上述裝置可用於三種不同模式中: •在/進核式中,遮罩台町實質上保持固定,整個遮罩 其々△趟(即一「閃」)當中對目標部分C投影完成。接著 :口 W丁向X及…方向移動,使光束PB能照射另一目標 邵分C。 八?田杈式中’貫質上適用相同的狀況,但特定目標部 ^亚1於單一「一閃」中曝光。遮罩台MT卻可在一特定 方向(所謂的「播折古 ^ 才 田σ」,例如y方向)以一速度v移動,使 =束PB掃描通過—遮罩影像,同時基板台町則 向或反向以速度V = ^ ^ ,、 夕動,其中Μ為透鏡PL的放大倍率 1,或1/5)。如此,可曝光-相對大區域的目 -15- 1253545The substrate is precisely positioned relative to the item PL; a projection system (factory lens) PL (eg, a diffractive mirror group) to map an illuminated portion of the programmed pattern member to the substrate... ― Target part C (for example containing one or more crystal dies). As described herein, the device is of a reflective type (e.g., having a reflective patterning member). However, in general, it may also be, for example, a transmissive (four) legacy type (eg, including a transmissive programmable patterning member. Or 'the device may employ another patterned member, such as the one described above. Programmable LCD array. The radiation source LA (for example, a excimer laser) generates a radiation beam. This beam is injected directly or after passing through an adjustment member such as a beam expander Ex. The illumination system (illuminator) is in the middle of the river. The illuminator 匕 may include an adjustment member AM to set the outer radial extent and/or the inner radial extent of the intensity distribution in the beam (generally referred to as ?-outer and ?_in, respectively). It will generally include several other components, such as an integrator and a concentrating mirror c. Thus the beam pB illuminated on the programmable patterning member MA has a desired uniformity in its cross section. Intensity distribution. The radiation source LA that should be noted in Figure 1 can be located in the housing of the lithographic projection device (usually when the radiation source LA is a mercury lamp, for example), but it can also be associated with lithography. Projection device distance Far, the resulting beam of light is introduced into the device (for example by means of a suitable guiding mirror), when the source LA is a quasi-molecular laser 'usually the latter situation. The invention and the scope of the patent application The two cases are included. The light beam PB is then irradiated to the programmable pattern 14-(ii) (ii) 1253545, which is supported by the mask table T. After the component μα is reflected, the light beam PB L passes through the 铳PL, causing the light beam PB to be focused on a target portion c of the substrate w. With the aid of the second positioning member (and the interferometric metric measudng member IF), Precisely moving the substrate, for example, ^ positioning different target portions c on the path of the beam PB. Similarly, the first positioning member is used to make the programmable patterning member MA (as in scanning t) relative to The path of the beam (9) is precisely positioned. The first positioning member can be omitted. In this case, the position of the programmable patterning member relative to the beam 固定t should be fixed. Generally, the movement of the object table by ^, wt is a long trip group (rough Positioning) and a short-stroke module (fine positioning) help: both are not clearly marked in Figure 1. However, if in the wafer stepper _. (relative to the step-by-step device ), 4 hood MT may only be connected to the short-acting transmission (actuat〇r), or fixed. The above device can be used in three different modes: • In the / nucleus type, the mask is basically maintained Fixed, the entire mask is 々 趟 (ie, a "flash") is projected to the target portion C. Then: the mouth W is moved in the direction of X and ..., so that the beam PB can illuminate another target sub-point C. In the Tian Hao style, the same situation applies to the permeation, but the specific target part is exposed in a single "one flash". The mask table MT can be moved at a speed v in a specific direction (so-called "dang Gu ^ 才田σ", for example, the y direction), so that the beam PB is scanned through the mask image, and the substrate is tuned to The reverse direction is at the speed V = ^ ^ , , and 夕, where Μ is the magnification of the lens PL 1, or 1/5). So, can be exposed - relatively large area of the target -15 - 1253545

(12) 標部分C而不需犧牲解析度。(12) Mark part C without sacrificing resolution.

3.在脈衝模式中’大體係讓遮罩台固定,並將可程式圖案 化構件的整個影像投影於基板之一目標部分C上。基板台 WT以一大體固定的速度移動,致使投影光束pB以一直線掃 描通過基板W。輻射系統的脈衝皆有一固定時間間距,使 基板上相繼目標的部分c互相鄰接。因此,一旦投影光束掃 私過该基板W的整條線,該線上的完整圖案即已曝光於基 板上。重複該步驟,直到整片基板已逐線曝光完畢。 圖2顯示根據本發明一項特定具體實施例的成像裝置之 部分。在此具體實施例中,圖丨的可程式圖案化構件MA包 括複數個(N=4)的圖案化構件成分pM1、pm〕、pM3、PM4 卜光束PB由四個鏡面塊導向該圖案化構件]v[A,四個 鏡面塊用於分割入射投影光束pBi成為投影光束成分pBi PB2 PB3、PB4。投影光束成分 pB 丨、pB]、pB3、PB43. In the pulse mode, the large system fixes the mask table and projects the entire image of the programmable pattern member onto one of the target portions C of the substrate. The substrate stage WT is moved at a substantially fixed speed such that the projection beam pB is scanned through the substrate W in a straight line. The pulses of the radiation system each have a fixed time interval such that portions c of successive targets on the substrate abut each other. Thus, once the projected beam is swept through the entire line of the substrate W, the complete pattern on the line is exposed to the substrate. This step is repeated until the entire substrate has been exposed line by line. Figure 2 shows a portion of an imaging device in accordance with a particular embodiment of the present invention. In this embodiment, the programmable patterning member MA of the figure includes a plurality of (N=4) patterned member components pM1, pm], pM3, PM4. The light beam PB is guided by the four mirror blocks to the patterned member. ]v[A, four mirror blocks are used to split the incident projection beam pBi into projection beam components pBi PB2 PB3, PB4. Projected beam composition pB 丨, pB], pB3, PB4

分別從其各自的圖案化構件成分PM卜PM2、PM3、PM4反 射並圖案化。如所示’各投影光束成分PBi、pB2、叩3、 PB4通過其各自的可變衰減器VA工、VA2、va3、va4產生 個投影光束成分的個別強度11、12、13、14;然後,可隨 選擇11至14的相對值。 或者,吾人可以省略(至少一些)可變衰減器vai至va4, 直接使用由光束分割構件別特性產生仙至^之固有值。 圖案化後,投影光束成分PB1、PB2、PB3、PB4再反射 回各自的鏡面塊用於結合投影光束成分成為單一合成 發射投影光束PBe。因此,該等鏡面塊即係當作結合構件cm -16- 1253545They are respectively reflected and patterned from their respective patterned member components PM, PM2, PM3, and PM4. As shown, 'each projection beam component PBi, pB2, 叩3, PB4 produces individual intensity 11, 12, 13, 14 of the projected beam components by their respective variable attenuators VA, VA2, va3, va4; The relative values of 11 to 14 can be selected. Alternatively, we can omit (at least some) of the variable attenuators vai to va4, directly using the intrinsic value of the beam splitting component to produce the intrinsic value. After patterning, the projected beam components PB1, PB2, PB3, PB4 are then reflected back to the respective mirror blocks for combining the projected beam components into a single composite projected projection beam PBe. Therefore, the mirror blocks are used as the joint member cm -16 - 1253545

或者’亦可將5亥荨技影光束成分pb 1、pB2、pb3、PB4 各自獨立地投影於該基板的目標部分。 ”、、員而易見,I】、〗2、“ · · · In中所需的變化可以各種不同方 去達成。該輻射系統的各圖案化構件成分可包括一不同的 輻射源(如雷射或燈)·此時,In即可藉由(例如)改變各輻射 源的輪出功率而改變,或於各輻射源及其對應之圖案化構 件成分之間使用一可變衰減器。 、根據當下的II至14相對值,在發射的投影光束pBe中,可 達成各種灰階分級度,此種灰階將通過投影系統,最後 達到基板W上。灰階分級的原理將說明如下。 ^圖3為本發明使用的灰階分級原理之示意圖,其係以高度 簡化的圖案ρ為基礎。如圖中左側部分所示,圖案ρ包括Ρ 個像素位置,各按序數丨至12標示。各像素位置具有不同的 「色調(tints)」,如下所示: -像素位置1及6為「黑色(B)」; -像素位置4、7及10為「深灰色(DG)」; -像素位置5及8為「中灰色(MG)」; -像素位置3及9「淺灰色仏⑺」; -位置2、Π及12為「白色(w)」。 。亥圖下方部份顯示使用本發明後,能在圖案中達成的灰 級效果(即中間色調DG、MG及LG)。為此目的,此圖 顯示圖2的四個圖案化構件成分PM1至PM4,配合個別像素 勺又计、°構結合之後可形成圖案p。由於各圖案化構件成 分皆為二元型S,其個別像素可以為「開」⑴或「關」(0) -17- (14) 1253545Alternatively, the 5 荨 荨 technical beam components pb 1 , pB2 , pb3 , and PB4 may be independently projected onto the target portion of the substrate. ", and it is easy to see, I], 〖2, " · · · The changes required in In can be achieved in various ways. Each patterned component of the radiation system can include a different source of radiation (such as a laser or a lamp). In this case, In can be changed, for example, by changing the wheel power of each source, or for each radiation. A variable attenuator is used between the source and its corresponding patterned component components. According to the current relative values of II to 14, in the emitted projection beam pBe, various gray scale gradations can be achieved, and the gray scale will pass through the projection system and finally reach the substrate W. The principle of grayscale grading will be explained as follows. Figure 3 is a schematic illustration of the gray scale classification principle used in the present invention, based on a highly simplified pattern ρ. As shown in the left part of the figure, the pattern ρ includes 像素 pixel positions, each of which is indicated by an order of 丨 to 12. Each pixel position has a different "tints" as follows: - pixel positions 1 and 6 are "black (B)"; - pixel positions 4, 7 and 10 are "dark gray (DG)"; - pixels Positions 5 and 8 are "medium gray (MG)"; - pixel positions 3 and 9 "light gray 仏 (7)"; - positions 2, Π and 12 are "white (w)". . The lower part of the chart shows the gray-scale effects (i.e., midtones DG, MG, and LG) that can be achieved in the pattern after using the present invention. For this purpose, the figure shows the four patterned component components PM1 to PM4 of Fig. 2, which can be formed in combination with the individual pixel spoons and the combination of the structures. Since each patterned component is a binary S, its individual pixels can be "on" (1) or "off" (0) -17- (14) 1253545

,分別意謂可讓光傳遞到純或加以阻矛 應注意下列幾點: ^ 在此情況下, 在所有四個圖案化構件成分中 取刀甲像素位置1及ό皆為「關」 。因此’在需要時,這也位詈太入士 一1置在口成圖案Ρ中為「黑色」。 -在所有四個圖案化構件成分中 、 丹卞取刀甲像素位置2 ' 11及12皆 為「開」。所以,這些位置在需要砗 牡而晋日守將接收合成圖案Ρ中 的最大強度1(「白色」)。 在圖案化構件成分PM1至蘭中像素位及9為「開, respectively, means that the light can be transmitted to pure or hindered. The following points should be noted: ^ In this case, the position 1 and ό of the knives in all four patterned components are "off". Therefore, when it is needed, this is also a place where the number of people is too high. - Among all four patterned component components, the tanzanite pixel position 2 '11 and 12 are both "on". Therefore, these positions require a maximum intensity of 1 ("white") in the synthetic pattern when the oysters are needed. In the patterned component components PM1 to Lan, the pixel position and 9 are "on"

,但在圖案化構件成分PM4中 這些位置將接收強度11+12 + 13 則為「關」。所以,圖案ρ中 ’但不含14。因此,這些位置 會較亮,但不會是「白色 「淺灰」色調。 依此方式,即可達成所需的 -在圖案化構件PM1及PM3中像素位置5及8為「開」,但在 圖案化構件PM2及PM4中則為「關」。所以,圖案p中的這 些位置將接收強度11+13,但不含12 + 14。因此,其亮度小於 前述的情況。依此方式,即可達成所需的「中灰」色調。 -在圖案化構件PM3及PM4中像素位置4、7及9為「開, 但在圖案化構件PM1及PM2中則為「關」。所以,圖案p中 的這些位置將接收強度13+14,但不含11+12。因此,這些位 置的亮度會小於前述的情況(因在此特定具體實施例中, 11>12>13>14)。依此方式,即可達成所需的r深灰」色調。 熟悉技術人士應能立即明暸,可依此類似方式在圖案化 構件成分PM 1至PM4中進行像素結構各種不同的(替代性) 重排,以達成各種不同的灰色「色調」。However, in the patterned component component PM4, these positions will be "off" when the received intensity 11+12 + 13 is received. Therefore, the pattern ρ is ' but does not contain 14. Therefore, these locations will be brighter, but they will not be "white "light gray" tones. In this way, it is possible to achieve - the pixel positions 5 and 8 are "on" in the patterned members PM1 and PM3, but "off" in the patterned members PM2 and PM4. Therefore, these locations in pattern p will receive an intensity of 11+13 but no 12 + 14. Therefore, its brightness is smaller than the aforementioned case. In this way, the desired "medium gray" hue can be achieved. - The pixel positions 4, 7, and 9 are "on" in the patterned members PM3 and PM4, but are "off" in the patterned members PM1 and PM2. Therefore, these locations in pattern p will receive an intensity of 13+14 but no 11+12. Therefore, the brightness of these locations will be less than the foregoing (as in this particular embodiment, 11 > 12 > 13 > 14). In this way, the desired dark gray tone can be achieved. It will be immediately apparent to those skilled in the art that various (alternative) rearrangements of the pixel structure can be performed in the patterned component components PM1 to PM4 in a similar manner to achieve various gray "hues".

-18- (15) 1253545 资明說明續買 適當選擇不同值的1n(在上述實例中n為四),便能在廣大 的數值範圍内產生灰階。吾人可(例如)選擇強度L,使 1卜12_13.14...11’1:2:4:8...211_1。如此,即可以有限數目的圖案 化構件成分’產生出最大數量的灰階分級。或者,吾人可 選擇強度1η ,使 Ii:I2:I3:I4:I5. 使有一圖案化構件成分故障 ..1丨1 :1:2:3 :5···Ιη-2 + Ιη-ι, ,仍能產生灰階的「色調 則即 」。除-18- (15) 1253545 Note: Continued Buying 1n with different values (n is four in the above example) can produce gray scales over a wide range of values. We can, for example, select the intensity L such that 1 Bu 12_13.14...11'1:2:4:8...211_1. Thus, a maximum number of gray scale gradations can be produced with a limited number of patterned component components. Or, we can choose the intensity 1η so that Ii:I2:I3:I4:I5. Make a patterned component component failure..1丨1 :1:2:3 :5···Ιη-2 + Ιη-ι, , still can produce the "tone" of the gray level. except

了這些例子以外,當然還有許多其他可能性。 圖4顯示根據本發明產生額外灰階「色調」之一構件的細 即。為簡化起見,本圖不顯示投影光束成分pB1至ρΒ4如何 產生,或其如何導向其各自圖案化構件成分pMl至ρΜ4的細 即,也不顯不在基板w上聚焦投影光束成分所使用的光學 系統。另外,此圖顯示的圖案化構件成分pM丨至pM4為透射 型’不過必須注意,相同的原理亦可應用於反射型的圖案 化構件成分。熟悉技術人士應會明瞭並掌握其重點。In addition to these examples, there are of course many other possibilities. Figure 4 shows the detail of one of the components of the additional grayscale "hue" produced in accordance with the present invention. For the sake of simplicity, this figure does not show how the projected beam components pB1 to ρΒ4 are generated, or how they are directed to the thinness of their respective patterned component components pM1 to ρΜ4, nor the optical used to focus the projected beam component on the substrate w. system. Further, the patterned member components pM丨 to pM4 shown in this figure are of a transmissive type. However, it must be noted that the same principle can be applied to the reflective patterned member component. Those who are familiar with the technology should understand and grasp the key points.

如所不,圖1的晶圓台可依d的方向前後移動。依此方式 ,即可使基板w上的已知目標部分c掃描通過該等圖案化構 件成分PM1至PM4所產生的各別圖案化投影光束成分PB1 至PB4。如果基板w在d方向的速度¥準確配合圖案化構件成 分PM1至PM4中產生圖案的計時/同步信號,則目標部分ε 會在(例如)其經過圖案化之投影光束成分pB1至pB4時,接 受圖3下方所示之各別圖案的曝光。這是序列曝光,而非圖 2所示的並行曝光。 昌然’另一替代方法為,不使基板W移動經過光束PB i 至PB4 ,吾人也可移動光束pB1至pB4而使基板保持靜止不 -19- (16) 1253545If not, the wafer stage of Figure 1 can be moved back and forth in the direction of d. In this manner, the known target portion c on the substrate w can be scanned through the respective patterned projection beam components PB1 to PB4 produced by the patterned component components PM1 to PM4. If the velocity of the substrate w in the d direction is exactly matched with the timing/synchronization signal of the pattern generated in the patterned member components PM1 to PM4, the target portion ε is accepted, for example, when it passes through the patterned projection beam components pB1 to pB4. The exposure of the individual patterns shown at the bottom of Figure 3. This is a sequence exposure, not the parallel exposure shown in Figure 2. Another alternative is to prevent the substrate W from moving through the beams PB i to PB4. The beam pB1 to pB4 can also be moved to keep the substrate still. -19- (16) 1253545

動 丨了將使用同時曝光的多種圖 術,結合使用同一圖宰化椹杜、隹 > 夕a 卞风刀之技 ……「仃多次曝光之技術,以產 、士几Λ "色調」。此時,基板目標部分上的圖案,應 續板目標部分的兩個以上圖案化構件成分連 —欠:光的L·所產生的結果。每一圖案化構件成分與每 -人暴先的強度及圖案皆可不同。A variety of graphics techniques that will use simultaneous exposure, combined with the same figure, Zaihua, Du, 隹, 夕 a 卞 刀 刀 ...... ...... ...... ...... ...... 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃 仃"." At this time, the pattern on the target portion of the substrate is the result of the combination of two or more patterned members of the target portion of the panel. Each patterned component may be different in intensity and pattern from each person.

暖:可僅:單-可程式圖案化構件’以重複地對目標部分C 、先,母-人曝光時變更照射程度與圖案。 雖然本發明的特定呈每 發明可以1他方::規::例已如上述說明’應明瞭本 、/、他方法Μ現。本發明不受限於上述說明。 圖式簡單說明 每以上係參考僅作為範例的附圖來詳細說明本發明之具體 只方也例,芦中· _ 置圖U’員不依據本發明的一項具體實施例之一微影投影裝 圖2顯示依據本發明一項特定具體實施例的成像襄置之 邵分; :3顯不本發明使用的灰階分級原理;以及 圖”、、員不根據本發明另一項具體實施例的成像裝置之部 @在圖式中,對應的參考符號表示對應的零件。 圖式代表符號說明 1,6 -20- 1253545 (口)Warm: Only the single-programmable pattern member is used to change the degree of illumination and the pattern when repeatedly exposing the target portion C, the first, and the mother-person. Although the specific invention of the present invention can be used for each other: the specification: the example has been explained as described above, and it should be understood that the method is present. The invention is not limited by the above description. BRIEF DESCRIPTION OF THE DRAWINGS Each of the above is a detailed description of the specific embodiments of the present invention with reference to the accompanying drawings, which are merely by way of example, and the drawing U's members are not in accordance with one embodiment of the present invention. Figure 2 shows a schematic representation of an imaging device in accordance with a particular embodiment of the present invention; : 3 shows the grayscale grading principle used by the present invention; and the figure "," is not according to another embodiment of the present invention In the drawing, the corresponding reference symbols indicate the corresponding parts. The drawing represents the symbol description 1,6 -20- 1253545 (port)

2,11,12 3,9 4, 7,10 5,8 11-14 C CM LA P PB?PB1-PB4 PL PM1-PM4 Ex,IL VA1-VA4 W WT MT AM IN CO 像素位置(w) 像素位置(LG) 像素位置(DG) 像素位置(MG) 個別強度 目標部份 組合構件 輻射源 圖案 投影光束 投影系統 圖案化構件 輻射系統 可變衰減器 基板 基板台 遮罩台 調整構件 整合器 聚光鏡2,11,12 3,9 4, 7,10 5,8 11-14 C CM LA P PB?PB1-PB4 PL PM1-PM4 Ex,IL VA1-VA4 W WT MT AM IN CO Pixel Position (w) Pixels Position (LG) Pixel Position (DG) Pixel Position (MG) Individual Strength Target Part Combination Component Radiation Source Pattern Projection Beam Projection System Patterning Member Radiation System Variable Attenuator Substrate Substrate Cover Table Adjustment Member Integrator Condenser

-21--twenty one-

Claims (1)

1253 541091134773號專利申請案 ?餐瓜| ,,.: .“-V ,| 拾、申請專利範圍 i. 一 禋倣影投影裝置,其包括: -4射系、統’用於提供—第射投影光束; -第:可程式圖案化構件,用以依據一第一所需圖案使 該第一投影光束圖案化; -一基板台,用以支撐一基板; --投影系統,用以將形成圖案的該第一投影光束投影 在該基板的一目標部分上, 其特徵為,該裳置進—步包括第二可程式圖案化構件 ’用以依據-第二所需圖案圖案化該輻射系統二 投影光束; :投f系統將該第二圖案化投影光束投影於該基板 之ό亥目標部分;以及 強Π —圖案化投影光束與該第二圖案化投影光束之 強度係不同。 2. =:專利範圍第i項之微影投影裝置,其中用於個別 八=圖案化構件的該等圖案可為不同,使該目標部 光束· -、先、乂下任一光束:該第一投影 = 光束;兩者皆不使用;以及兩者同 3.利範圍第_項之微影投影裝置,其中該輕射 光束分割器,其係配置以提供該第-投影光 光束具有不同之強度。吏“―技影光束與該第二投影Patent application No. 1253 541091134773? Meal |,,.: . "-V ,| Pick up, apply for patent scope i. A copy projection apparatus, including: -4 shooting system, system 'for providing - first shot a projection beam; - a programmable patterning member for patterning the first projection beam according to a first desired pattern; - a substrate stage for supporting a substrate; - a projection system for forming The first projection beam of the pattern is projected onto a target portion of the substrate, wherein the step further comprises a second programmable patterning member for patterning the radiation system according to the second desired pattern a second projection beam; the projection system projects the second patterned projection beam onto the target portion of the substrate; and the intensity-patterned projection beam is different from the intensity of the second patterned projection beam. The lithographic projection apparatus of the invention of claim i, wherein the patterns for the individual eight=patterned members may be different, such that the target beam is -, first, or under the beam: the first projection = Beam; neither is used; And the lithographic projection apparatus of the same item, wherein the light beam splitter is configured to provide the first projection light beam to have different intensities. 吏"-Technology beam and the first Two projection 申清專利範園績貢 如申請專利範圍第⑷項之微影投影裝置,其中 一可變衰減器,以至少綱敕兮穿 α 百 影光束影光束與該第二投 弟一圖案化投影光束與該第二圖案化投 衫先束之一的強度。 仅 如申請專利範圍第_項之微影投影裝置,其中該 ^统包括第-與第二輕射源,其強度可獨立設^, 輻射源分別供應該第一投影光束與該第二投影光束。、 如申請專利範圍第1或2項之微影投影裝置,其中— 圖案化技影光束與該第二圖案化投影光束組合成 光束,並藉由該投影系統投影於該基板之 申:專利Id圍第i或2項中任—項之微影投影裝置,其 猸:Ϊ "圖案化投影光束與該第二圖案化投影光束係 ^投影至該基板之該目標部分上。 如申請專利範圍第⑻項之微影投影裝置,其中該务士置 被調整,以將該等可程式圖案化構件之至少_可程式圖 案化構件所圖案化的至少一第二曝光投影 該目標部分。 微影投影裝置之製造方法,其步驟包括·· -製備一至少部分被一輻射感應材料層所覆蓋的基板; 利用輻射系統提供一第一輻射投影光束; 第可私式圖案化構件賦予該第一投影光束一 第一圖案式之斷面; :^第圖案化之輻射投影光束投影至該輻射感應 1253545Shen Qing Patent Fan Yuan Jigong, as in the patent application scope (4) of the lithography projection device, one of the variable attenuators, at least to α α α 百 百 光束 光束 与 与 与 与 图案 图案 图案 图案 图案 图案 图案The intensity of one of the bundles with the second patterned shirt. The lithographic projection apparatus of claim _, wherein the system includes first and second light sources, the intensity of which can be independently set, and the radiation source supplies the first projection beam and the second projection beam, respectively. . The lithographic projection apparatus of claim 1 or 2, wherein - the patterned technical beam and the second patterned projection beam are combined into a light beam, and projected by the projection system on the substrate: Patent Id A lithographic projection apparatus according to any of items i or 2, wherein: Ϊ " a patterned projection beam and the second patterned projection beam are projected onto the target portion of the substrate. The lithographic projection apparatus of claim 8 (8), wherein the clerk is adjusted to project the target by at least one second exposure patterned by at least the storable patterning member of the programmable patterning member section. A method of manufacturing a lithographic projection apparatus, the method comprising: preparing a substrate at least partially covered by a layer of radiation-sensitive material; providing a first radiation projection beam by using a radiation system; and providing a first private patterning member a projection beam of a first pattern; : ^ a patterned radiation projection beam projected to the radiation sensing 1253545 申請專利範圍續頁 材料層之一目標部分, 其特徵為: -提供一第二輻射投影光束; -提供第二可程式圖案化構件,賦予該第二投影光束一 第二圖案式之斷面;以及 -將該第二圖案化輻射投影光束投影至該輻射感應材 料層之該目標部分; 其中該第一圖案化投影光束與該第二圖案化投影光束 具有不同的強度。A target portion of a material layer of a continuation page of the patent application, characterized in that: - providing a second radiation projection beam; - providing a second programmable patterning member, giving the second projection beam a second pattern section; And projecting the second patterned radiation projection beam to the target portion of the layer of radiation-inducing material; wherein the first patterned projection beam has a different intensity than the second patterned projection beam.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9996012B2 (en) 2008-02-15 2018-06-12 Carl Zeiss Smt Gmbh Facet mirror for use in a projection exposure apparatus for microlithography

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9996012B2 (en) 2008-02-15 2018-06-12 Carl Zeiss Smt Gmbh Facet mirror for use in a projection exposure apparatus for microlithography
TWI639892B (en) * 2008-02-15 2018-11-01 卡爾蔡司Smt有限公司 Combined mirror for projection exposure apparatus in lithography

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