1251461 五、發明說明（1) 【發明所屬之技術領域】 本發明係涉及一種熱 ’特別是指 結合一 熱電式 【先前 按 的中央 小，但 運作時 導的速 法及時 ，輕則 ，中央 η 孑設備 空氣’ 子元件 旅不佳 天還經 空氣導 舊在高 是無法 另 體之熱 散熱器 技術】 ，電子 處理器 在運作 功率消 度無法 熱傳導 造成電 處理器 前常見 機殼上 另導入 因運作 ，因外 常是維 入電子 溫的機 有效率 一型常 種含有致冷 電式散熱器 電式散熱器赞士 晶片以&鳍G方法及其製成品 製成方法，以^或板式導熱構件 及依此方法製成之 元件的技術 ，更是在不 效能與效率 耗所產生的 獲得相等效 與快速散熱 腦的當機， 的散熱乃形 的散熱裝置 ，並設計成 比機殼内溫 所產生的熱 部的室溫並 持到達35度 設備達到降 殼環境中運 散熱。 被用以移除 曰新月 斷的技 方面卻 熱量， 益，惟 ，在中 重則造 成一重 ，一型 用以將 度較低 。這種 非較機 以上的 溫的預 作，即 異，特別 術創新下 不斷獲得 也就累積 該中央處 央處理哭 成中央處 要課題； 政熱裝置 空氣彳盾環 的外部空 單由風扇 殼内部溫 南還，^ 期有限， 使女裝更 是使用於電腦中 ’後得體積的縮 提昇，然相對因 的越快而使熱傳 1里器的熱能若i w /、、、 產生過熱現象時 理器燒毀。因此 係風扇固定於電 ’移除機内部埶 氣’藉以消散電 進行散熱的效率 度低，甚至在夏 利用這樣的溫度 因為電子設備依 夕個散熱風扇還 電子元 件產生 源的散熱器，1251461 V. INSTRUCTION DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to a type of heat, in particular, a combination of a pyroelectric type [previously pressed centrally small, but the speed of the operation is guided in time, light, central η孑Equipment air' sub-element travel is not good, but the air is old. At the high, it is impossible to heat radiator technology. The electronic processor can not be heat-transferred in operation. Operation, because it is often a machine that is compatible with electronic temperature, a type of common type contains a cooling electric radiator, a heat sink, a Zhanshi wafer, a & fin G method and its finished product, to ^ or plate The technology of the heat-conducting member and the component made according to the method is the heat-dissipating heat-dissipating device which is equivalent to the inefficiency and the efficiency of the power generation, and is designed to be smaller than the casing. The room temperature of the hot part generated by the temperature reaches 35 degrees and the device reaches the environment of the falling shell to dissipate heat. The technique used to remove the new moon is thermal, beneficial, but it is a heavy one in the medium weight and a lower one in the first. This kind of non-machine-based warm pre-production, that is, different, special surgery under the continuous acquisition will accumulate the central central processing to cry into the central office; the thermal device air Shield ring external empty single by the fan shell The internal Wennan also has a limited period, so that the women's wear is used in the computer's volume reduction. However, the faster the relative heat is, the heat energy of the heat exchanger is iw /, ,, and overheating. The time processor burned. Therefore, the fan is fixed to the electric eliminator to remove the heat, so that the heat dissipation is low, and even in the summer, the temperature is generated by the electronic device.
1251461 五、發明說明（2) 包括一底座 散熱片組透 &電子元件 ^些散熱器 散熱速度。 市售另 係利用具有 散熱器，藉 換至散熱端 器，然後利 述該電子式 、下二陶瓷 組成，然表 屬或其他高 成間接熱傳 理想。 【發明内容 本發明 法，其主要 不導電鍍層 有基板之執 ί、、、 片之熱電式 本發明 ’其主要在 及熱傳遞結合於前述 過底座固定於電子元 所產生的熱，再輻射 也可以將風扇配置在 有一型電子式散熱裝 熱交換之欵冷晶片， 由該致冷晶片將電子 表面，再熱傳遞到結 用散熱器或進一步配 散熱裝置之致冷晶片 基碑以及夾層間電性 面之陶瓷基板在熱傳 $熱性材料’再加上 遞運作，致使電子式 ] 之主要目的，是提供 在利用鰭片式或板式 處理與導線定義配置 電半導體元件之散熱 散熱器，其能透過直 之另一目的，是提供 製成一含有致冷晶片 底座一表面的散熱片組； 件表面以作熱傳遞，以吸 到周遭空氣中散去。當然 散熱片上，以提昇散熱片 置，如第一圖所 1亥熱傳導表面疊 70件產生之熱， I於該散熱端表 &風扇來進行散 ’在具體結構上 連結之Ρ —Ν半導 導係數上，係遠 必需透過基板到 散熱裝置之熱傳 示，主要 組前述之 進行熱交 面之散熱 熱；惟前 係利用上 體材料所 不及於金 散熱器形 導效果不 一種熱電式散熱器製成方 導熱構件，在一表面進行 ，用以直接與致冷端結合 端結合，製成含有致冷晶 接式熱交換傳遞熱能。 一種熱電式散熱器製成品 以及導熱構件之散熱器，1251461 V. INSTRUCTIONS (2) Include a base Heat sink group transparent & electronic components ^ These heat sinks heat dissipation speed. Commercially available, the use of a heat sink, the replacement of the heat sink, and then the electronic and the second ceramic composition, but the table or other high-intensity indirect heat transfer ideal. SUMMARY OF THE INVENTION The method of the present invention, the main non-conductive plating layer has a substrate, and the thermoelectric type of the sheet is mainly used in the heat transfer combined with the heat generated by the above-mentioned over-substrate fixed to the electron element, and the radiation is also radiated. The fan can be disposed in a type of electronic heat-dissipating heat-exchanged cold-rolled wafer, and the cooled surface transfers the electronic surface to the junction heat sink or the cooling chip substrate and the interlayer electricity. The main purpose of the ceramic substrate of the thermal surface is to transfer the thermal material 'plus the operation of the thermal material', and the main purpose of the electronic substrate is to provide a heat sink for disposing the electrical semiconductor component by using fin or plate processing and wire definition. For the other purpose, it is provided to provide a heat sink group having a surface of the base of the cooled wafer; the surface of the part is used for heat transfer to absorb the surrounding air and dissipate. Of course, on the heat sink, to enhance the heat sink, as shown in the first figure, the heat generated by the heat conduction surface stack 70, I use the heat sink surface & fan to carry out the concrete structure of the heat sink. In the conductivity coefficient, it is necessary to transmit heat through the substrate to the heat dissipating device. The main group is to dissipate the heat of the heat surface. However, the front part is not as good as the gold heat sink. The heat conducting member is formed on a surface for direct bonding with the junction end of the cooling end to form a heat transfer heat transfer material containing a cooling crystal. A thermoelectric heat sink finished product and a heat sink for a heat conducting member,
1251461 五、發明說明（3) 該致冷晶片之散熱端，一體電性連結裝組有鰭片式或板式 導熱構件，進行直接之熱傳遞，而致冷晶片之另端則結合 一基板，用以結合於電子元件表面進行熱交換運作。 、 根據本發明而提供一種熱電式散熱器製成方法，該方 法步驟包括： 提供一作為表面層之基板，基板結合端面定義配置有 用以電性連結熱電半導體元件之導線； 提供一P —N半導體材料組成之熱電半導體元件，並與 前述基板端面導線為電性結合； 提供一導熱構件，在一端面進行不導電鍍層處理，並 在該不導電鍍層端面進行導線定義配置； 將前述導熱構件定義有導線之端面，直接電性結合於 前述半導體元件，組成熱電式散熱器。 根據本發明前述具體製成方法而製成一種熱電式散熱 器製成品，在一製成之散熱器結構包括： 一熱電半導體元件； 一含有端面導線定義而結合於前述熱電半導體元件一表面 之基板； 一含有不導電處理並導線定義端面之導熱構件，結合 於前述熱電半導體元件另一表面； 藉由前述導熱構件與熱電半導體元件散熱端直接結合 一體，直接進行熱電半導體元件熱交換之熱能傳遞散熱， 相較於習知熱電元件，將具有更佳之散熱效率且製成成本 降低。1251461 V. INSTRUCTIONS (3) The heat dissipating end of the refrigerating chip, the integral electrical connection assembly has a fin-type or plate-type heat-conducting member for direct heat transfer, and the other end of the refrigerating chip is combined with a substrate for use The heat exchange operation is performed by bonding to the surface of the electronic component. According to the present invention, there is provided a method of manufacturing a thermoelectric heat sink, the method comprising: providing a substrate as a surface layer, the substrate bonding end surface defining a wire for electrically connecting the thermoelectric semiconductor component; providing a P-N semiconductor a thermoelectric semiconductor component composed of a material and electrically connected to the end face of the substrate; a heat conducting member is provided, and a non-conductive plating treatment is performed on one end surface, and a wire defining configuration is performed on the end surface of the non-conductive plating layer; The end face of the wire is directly electrically coupled to the aforementioned semiconductor component to form a thermoelectric heat sink. According to the foregoing specific manufacturing method of the present invention, a thermoelectric heat sink finished product is manufactured. The heat sink structure formed includes: a thermoelectric semiconductor component; and a substrate including an end face wire and bonded to a surface of the thermoelectric semiconductor component. a thermally conductive member having a non-conductive treatment and a defined end face of the wire is bonded to the other surface of the thermoelectric semiconductor device; and the heat transfer member and the heat dissipating end of the thermoelectric semiconductor device are directly integrated, and the heat transfer of the heat exchange of the thermoelectric semiconductor device is directly performed. Compared with the conventional thermoelectric elements, it will have better heat dissipation efficiency and lower the manufacturing cost.
1251461 五、發明說明（4) 【實施方式】 本發明之較佳實施例將前述的熱電式散熱器製成方法 . 及其製成品的主要技術内容適當揭示於以下所列舉的一較 佳實施例中，並利用該較佳實施例裝置將本發明之主要技‘ 術内容予以適當實施。 第二〜五圖揭示本發明一較佳實施例熱電式散熱器製 成方法的製成步驟圖。前述熱電式散熱器之具體製成方法 ，至少包括： 提供一基板1，在上表面11端面定義配置有多數導 線41 ，用以在與熱電半導體元件2結合.，並提供熱電半 籲 導體元件2各P—N半導體材料2 1、2 2間之電性結合， 如第一圖所示，用以作為結合熱電半導體元件2之一表面 層。 將一組熱電半導體元件2 ，利用該致冷表面層2 3結 合於前述基板1之一表面層，如第三圖所示，並利用基板 1端面所定義之多數導線41 ，進行熱電半導體元件2之 多數P — N柱狀半導體材料2 1、2 2之電性連結。 提供一導熱構件3，導熱構件3係採用高導熱但不導 電材料製成品；在其它具體實施製成方法中，前述導熱構 · 件3也可以採用高導熱金屬材料製成品，並進一步在用以 與前述熱電半導體元件2結合關係組立之端面3 1 ，進行 不導電鍍層3 3處理，如陽極處理，以獲得導熱但不導電 之端面3 1 ，如第四圖所示。在本發明具體實施例中，導 熱構件3至少含有一端面3 1 ，該端面3 1之表面上，同1251461 V. INSTRUCTION DESCRIPTION (4) [Embodiment] The preferred embodiment of the present invention suitably discloses the above-described thermoelectric heat sink manufacturing method and the main technical contents of the finished product thereof in a preferred embodiment listed below. The main technical contents of the present invention are appropriately implemented by using the apparatus of the preferred embodiment. 2 to 5 are views showing the steps of the manufacturing method of the pyroelectric heat sink according to a preferred embodiment of the present invention. The specific manufacturing method of the above-mentioned thermoelectric heat sink comprises at least: providing a substrate 1 having a plurality of wires 41 defined on an end surface of the upper surface 11 for being combined with the thermoelectric semiconductor component 2, and providing a thermoelectric semi-calling conductor component 2 The electrical connection between each of the P-N semiconductor materials 2, 2, as shown in the first figure, serves as a surface layer for bonding the thermoelectric semiconductor element 2. A group of thermoelectric semiconductor elements 2 are bonded to a surface layer of the substrate 1 by using the surface layer 23, as shown in the third figure, and the thermoelectric semiconductor element 2 is formed by using a plurality of wires 41 defined by the end faces of the substrate 1. Most of the P-N columnar semiconductor materials 2 1 and 2 2 are electrically connected. A heat conducting member 3 is provided, and the heat conducting member 3 is made of a highly thermally conductive but non-conductive material; in other specific implementation methods, the heat conducting member 3 can also be made of a high thermal conductive metal material, and is further used. The end face 3 1 combined with the aforementioned thermoelectric semiconductor element 2 is subjected to a non-conductive plating treatment, such as anodization, to obtain a thermally conductive but non-conductive end face 3 1 as shown in the fourth figure. In a specific embodiment of the present invention, the heat conducting member 3 has at least one end face 3 1 on the surface of the end face 31
第8頁 1251461 五、發明說明（5) 己導線f 2，如第四圖所示，用以在與熱 P—JV半導體材料=耵：熱電半導體元件2之各 將前述導埶構以差間另表面層之電性結合。 直接對應前述=義=有導線42之端面η， 二並:二線”對應= = = = = = 導 步驟= = 之；；ί散熱器製成方法，經各製成 -含有致晶片熱=熱器，如第五圖所示’為 :與電子元件:熱“ =導 層，且直接熱ί。。半導體元件2之散熱表面 此，即獲得一吉^刚述ν熱構件3，以進行熱發散。如 之散埶效率。^ i之熱傳遞與散熱，而有效提高致冷晶片 合於熱電Ϊ導ίί:?製作過程中，將導熱構件3直接結 冷晶片之製作^ ί散熱表面層2 4，相較於習知致 合，再結合導發明不需要透過散熱端基板之結 成本也獲得有；=在製作與使用上均更為便利，且 製成“ΐί::ί;ί製實熱電式散熱器 熱電式散熱器製成品的具體：：式口細說】本發明之前述 ®、.口稱弟一〜五圖是用來說明 1251461 五、發明說明（6) 一較佳具體實施例的本發明熱電式散熱器製成品結構。 第五圖中所揭示之熱電式散熱器結構，包括提供一作 . 為結合熱電半導體元件2之一表面層之基板1;一組熱電 半導體元件2;—作為結合熱電半導體元件2之另一表面 層之散熱構件3所組成；其中 該一基板1 ，主要在用以作為結合熱電半導體元件2 之一表面層，如第二圖所示，該基板1係採用不具導電性 但可導熱之材料製成品，在第二圖所揭示之一具體實施例 結構中5基板1由陶兗基板採用為最佳。基板1可以直接 成型為一平面板片形狀，如此便提供了上、下二個表面1 籲 1、1 2 ，在上表面1 1界定為結合表面層，並在該上表 面1 1端面定義有多數各導線4 1 ，用以作為與熱電半導 體元件2結合，以及熱電半導體元件2各P — N半導體材料 2 1、2 2間之電性結合。 " 一組熱電半導體元件2 ，係由多數個P — N柱狀半導體 材料2 1 .、2 2排列組成即俗稱之致冷晶片，主要在利用 前述P — N柱狀半導體材料2 1、2 2之接合部會吸熱效果 ，在通以電流之條件下，會將熱由一表面端傳遞到另一表 面端，以達到熱交換處理。在一具體實施例中，前述熱電 _ 半導體元件2含有一致冷表面端23 ，在本發明一具體實 施例製成方法中，係用以對應前述基板1結合之表面端； 以及另含有一散熱表面端24。 一導熱構件3，在本發明一具體實施例結構中，該導 熱構件3係採用高導熱但不導電材料製成品；在其它具體Page 8 1251461 V. Description of the Invention (5) The wire f 2 , as shown in the fourth figure, is used to make the aforementioned guides inferior to each of the hot P-JV semiconductor materials = 耵: thermoelectric semiconductor elements 2 Another electrical connection of the surface layer. Directly corresponding to the above = meaning = with the end face η of the wire 42, two: two lines "corresponding = = = = = = lead step = =;; ί heat sink manufacturing method, made by each - contains the wafer heat = The heat exchanger, as shown in the fifth figure, is: "with: electronic components: heat" = conductive layer, and directly hot. . The heat dissipating surface of the semiconductor element 2, that is, a heat generating member 3 is obtained for heat dissipation. Such as divergence efficiency. ^ i heat transfer and heat dissipation, and effectively improve the cooling of the wafer in the thermoelectric ί ί ί ? ? ? ? 制作 制作 制作 制作 制作 制作 制作 制作 制作 制作 制作 制作 制作 制作 制作 制作 制作 制作 制作 导热 导热 导热 导热 导热 导热 导热 导热 导热 导热 导热 导热 导热 导热 导热 导热 导热In combination with the invention, it is not necessary to obtain the cost of the junction through the heat-dissipating end substrate; = it is more convenient in production and use, and is made into a "ΐί::ί; ί real thermoelectric radiator thermoelectric radiator The specifics of the finished product: the details of the formula: The above-mentioned ®, the mouth of the present invention, the first to fifth figures are used to illustrate 1251461. 5. The invention (6) A preferred embodiment of the thermoelectric radiator system of the present invention Finished structure. The thermoelectric heat sink structure disclosed in the fifth figure includes a substrate 1 for bonding a surface layer of the thermoelectric semiconductor element 2; a set of thermoelectric semiconductor elements 2; as another combination of the thermoelectric semiconductor elements 2 a surface layer of the heat dissipating member 3; wherein the substrate 1 is mainly used as a surface layer of the combined thermoelectric semiconductor element 2, as shown in the second figure, the substrate 1 is non-conductive but thermally conductive. Material finished product In the structure of one embodiment disclosed in the second figure, the substrate 1 is preferably made of a ceramic substrate. The substrate 1 can be directly formed into a flat plate shape, thus providing upper and lower surfaces 1 The upper surface 1 1 is defined as a bonding surface layer, and a plurality of wires 4 1 are defined on the end surface of the upper surface 1 1 for bonding with the thermoelectric semiconductor element 2, and each of the thermoelectric semiconductor elements 2 P - N The electrical connection between the semiconductor material 2 1 and 2 2 " A group of thermoelectric semiconductor elements 2, which are composed of a plurality of P-N columnar semiconductor materials 2 1 , 2 2 , which are commonly known as cryogenic wafers, mainly in The joint portion of the P-N columnar semiconductor material 2 1 , 2 2 has an endothermic effect, and under the condition of passing current, heat is transferred from one surface end to the other surface end to achieve heat exchange treatment. In a specific embodiment, the thermoelectric-semiconductor component 2 includes a uniform cold surface end 23, which is used to form a surface end corresponding to the bonding of the substrate 1 in a method for fabricating the embodiment of the present invention; and further includes a heat dissipating surface end 24. One Heat member 3, in a particular embodiment of the structure of the present embodiment of the invention, the heat conducting member 3 based high thermally conductive material but not finished; in other specific
第10頁 1251461 五 發明說明（7) 實施例結構中，如第 — 、， 用高導熱金屬材料掣:所二、’刖述導熱構件3也可以採 導體元件2結合關係％二：：：步在用以與前述熱電半 前述導熱構件3 中’可以直接成型為 構體，如第四圖所示 平板式結構體，如此 元件2結合之端面3 置有多數導線4 2 ， 3處理，如暢極處理、，1，進行不導電鍍層3 以獲付v熱但不導電之端面3 1 。 二在第=圖所揭示之具體實施例結構 ~具有端面3 1與散熱鰭片3 2之么士 ，，或直接成型為-具有±、下端面： ，便提供一個用以與前述熱電半導體 j二在該端面3 1之表面上，定義配 電半導體元件2姓人〇弟四圖所示，用以在端面3 1與埶 Ρ—Ν半導體材料]並提供前述熱電半導體元件2之各 根據本發明前述瓿f f間另表面層之電性結合。 式散熱器製成品，相^=散熱器製成方法所製成之熱電 用，具*更佳之散熱n f冷晶片與散熱器之結合使 體元件2之散熱表面岸f熱橼件3直接與熱電半導 層2 4之熱，直接透以：：：得將熱交換於散熱表面 需再作致冷晶片與散埶J二、2件3進打熱傳導運作，且不 本發明所提供的來進行間接式熱傳遞。 務須確實瞭解此處所熱器製成方法及其製成品， 度限制本發明的；施D用來解釋而非用來過 例與申言青，均視A * ί利圍，未在此處所述的Α它〜 解，政 視為在本發明的範圍内。在士介& 男、施 雖然已經討論了太安敲+ ^ 亦矛力須確實睁 式，但執行大部份類似功能的這此 __ ， 二貝施結Page 10 1251461 V. INSTRUCTIONS (7) In the structure of the embodiment, as in the first, the high thermal conductivity metal material is used: the second, 'description of the heat conducting member 3 can also take the conductor element 2 combination relationship %:::step In the above-mentioned thermoelectric half-heat-conducting member 3, it can be directly formed into a structure, such as the flat-plate structure shown in FIG. 4, and the end face 3 combined with the element 2 is provided with a plurality of wires 4 2, 3, such as smooth The pole treatment, 1, is performed on the non-conductive plating layer 3 to obtain the v-heat but non-conductive end face 3 1 . The structure of the specific embodiment disclosed in FIG. 2 has a face 31 and a heat sink fin 32, or is directly formed into a ± lower end surface, and provides a heat and power semiconductor. 2, on the surface of the end face 31, defining the power distribution semiconductor component 2, as shown in FIG. 4, for use in the end face 31 and the germanium semiconductor material, and providing the aforementioned thermoelectric semiconductor component 2 according to the present invention The other surface layer of the above 瓿 ff is electrically combined. The heat sink is made of heat sink, and the heat sink is made by the heat sink. The heat sink is combined with the heat sink. The heat sink surface of the body component 2 is directly connected to the heat exchanger. The heat of the semi-conductive layer 24 is directly transmitted through::: the heat exchange is performed on the heat-dissipating surface, and the heat-dissipating wafer and the heat-dissipating film are used for heat transfer operation, and are not provided by the present invention. Indirect heat transfer. It is necessary to have a good understanding of the method of making the heat exchanger and its finished products, and to limit the invention; the application of D is used for explanation and not for the case and the claim, and it is regarded as A * ί 利围, not described here. It is considered to be within the scope of the present invention. In Shisuke & Male, Shi, although it has been discussed that Taian Knock + ^ is also a must-have, but performs most of the similar functions of this __, two shells
第11頁 品的特定實施方；熱電式散熱器製成方法及4: 1251461Page 11 Specific implementation of the product; thermoelectric radiator manufacturing method and 4: 1251461
第12頁 1251461 圖式簡單說明 【圖式之簡要說明】 第一圖係習知致冷晶片與散熱器之結合結構示意圖。 第二圖係本發明製法其一之基板製作結構圖。 第三圖係本發明製法其二之基板與熱電半導體元件結 合製作結構圖。 第四圖係本發明製法其三之散熱構件製作結構圖。 第五圖係本發明製法其四之散熱構件與熱電半導體元 件結合完成結構圖。 1 一基板 3 一散熱構件 1 2 —下表面 2 3 —致冷表面端 3 1 —端面 3 3 —不導電鍍層 2 —熱電半導體元件 1 1 —上表面 21、22 — P—N半導體材料 2 4 —散熱表面端 3 2 —散熱鰭片 4 1、4 2 —導線Page 12 1251461 Brief description of the drawing [Brief description of the drawing] The first figure is a schematic diagram of the combination of the conventional cold chip and the heat sink. The second figure is a structural drawing of the substrate of the method of the present invention. The third figure is a structural diagram in which the substrate of the second method of the present invention is combined with a thermoelectric semiconductor element. The fourth figure is a structural drawing of the heat dissipation member of the third method of the present invention. The fifth figure is a structural diagram in which the heat dissipating members of the fourth method of the present invention are combined with the thermoelectric semiconductor elements. 1 a substrate 3 a heat dissipating member 1 2 - a lower surface 2 3 - a cooling surface end 3 1 - an end surface 3 3 - a non-conductive plating layer 2 - a thermoelectric semiconductor element 1 1 - an upper surface 21, 22 - a P-N semiconductor material 2 4 - heat dissipation surface end 3 2 - heat dissipation fins 4 1 , 4 2 - wires
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