1248253 玖、發明說明： 【技術領域】 頻帶之功率放、 本發明係《於-種功率放大器，其_有關於—種具有雙 大器及其匹配方法。 【先前技術】 電信自由化的潮流，使得無線通訊受到高度的重視，因應即將來臨的視訊 通訊、數位影像㈣、統和未來個人通訊，錄態整合f路成為多重標準並= 統的必然走向。例如藍芽加無線區域網路，GSM/GPRS加無線區域網路，或多、 模無線區域網路IEEE802.Ua/b/g。無線通訊射顯組包括低雜訊放^哭 (Low-noise amplifier) > (Bandpass filter) ^ ^^l(Mixers) ^ 器(Vdtage oscmators)和功率放大器(p〇werampl_ 合’如900/1800MHz GSM行動通信和Z4/5 2GHz無線區域網路，單一電路具 備兩個通帶鮮，應成為研究重點。然而傳統操作雙頻帶的方法是切換兩路接 收和發射電路。因此，引進單—電路且具有兩個不_帶的接收和發射電路， 可以有效地減少電路元件且降低消耗功率。 在無線通訊m功較Ali為發職巾重要的元件，其電路設計的芙 本要求是_神鱗和辨效率。—健隸從天線發射出去之前，需_ 工神放大為將錢提升至額定的功率準位，如此才能將信號傳送出去，其輸出鲁 率的幻、献了通㈣離的遠近，而其效益的好細影響著手機的待機時間 長短和電池的使用時間。 ^ 6?215?359 , et aL , =功率放大器之阻抗匹配(/寧而⑽，㈣‘/ w漸r)”，其 t雙頻V功率放大器之匹配方法。該雙頻帶功率放大器包含兩級放大器，以 I該兩贼大器之間之一譜波遽波器匹配電路，其係用於在兩個頻率點上使 Z力率放大為之輸出能獲得最大功率。然而，在先前的技術中，其採用過多的 p-l〇2 1-TW-發明專利申 請書蘩說明書_ 1248253 =牛作為匹配電路並採用電壓源來決聰配的树 ‘造較為複雜的電路。另—方_雙頻帶;^值的選擇，因此造成了 GSM與1800MHzDCS系絲， 一 大时係揭示於使用在900MHz 擇方式。繁於以上問題，有f要不同雙頻帶之匹配電路參數的選 器及其匹配電路的¥構，^間早且_於不同雙頻帶之功率放大 的木構其可克服先·術的缺點。 【發明内容】 本I明之目的在提供一種雙頻帶功放 路適用於不同雙頻帶之功率放大器。 °。，/、電路架構簡單且其匹配電 本毛明之另-目的在提供_種雙頻帶功 混成電路或單石晶片方式實現。、 -電路架構可以同時以 為達上述及其他目的，本發雜丨 一第一頻率盥一箆-_ 又肩刀半放大态，可刼作在不同的1248253 玖, invention description: [Technical field] The power amplifier of the frequency band, the present invention is a kind of power amplifier, which has a double-sized device and a matching method thereof. [Prior Art] The trend of telecommunications liberalization has made wireless communication highly valued. In response to the upcoming video communication, digital video (4), unified and future personal communication, the integration of video recording becomes a multi-standard and inevitable trend. For example, Bluetooth plus wireless local area network, GSM/GPRS plus wireless local area network, or multi-mode wireless local area network IEEE802.Ua/b/g. The wireless communication shooting group includes low-noise amplifier > (Bandpass filter) ^ ^^l (Mixers) ^ (Vdtage oscmators) and power amplifiers (p〇werampl_合' such as 900/1800MHz GSM mobile communication and Z4/5 2GHz wireless local area network, a single circuit with two passbands should be the focus of research. However, the traditional method of operating dual-band is to switch two receiving and transmitting circuits. Therefore, the single-circuit is introduced. With two non-band receiving and transmitting circuits, it can effectively reduce circuit components and reduce power consumption. In wireless communication, m-function is more important than Ali, and its circuit design requirements are _ scales and Identifying the efficiency. Before the Jianli is launched from the antenna, it needs to be enlarged to raise the money to the rated power level, so that the signal can be transmitted, and the output of the Luyue is illusory and the pass is far away. The effectiveness of the effect affects the standby time of the mobile phone and the battery life. ^ 6?215?359 , et aL , = impedance matching of the power amplifier (/Ning and (10), (4) '/ w gradually r)", Its t dual-frequency V power amplifier The dual-band power amplifier comprises a two-stage amplifier, and a spectral chopper matching circuit between the two thieves is used to amplify the Z-force rate at two frequency points. The maximum power can be obtained. However, in the prior art, it uses too many pl〇2 1-TW-invention patent application 蘩 _ 1248253 = cattle as a matching circuit and uses a voltage source to determine the tree Complex circuit. Another - square _ dual band; ^ value selection, thus resulting in GSM and 1800MHz DCS wire, a large time is revealed in the use of 900MHz selection method. The above problems, there are different double frequency band matching The circuit parameter selector and its matching circuit structure, and the power amplification of the different dual frequency bands can overcome the shortcomings of the prior art. [Invention] The purpose of the present invention is to provide a dual band. The power amplifier circuit is suitable for power amplifiers with different dual frequency bands. °, /, the circuit structure is simple and the matching of the electric book is the same - the purpose is to provide a dual-band power mixing circuit or a single-grain chip implementation. - Circuit architecture can be At the same time, in order to achieve the above and other purposes, the first frequency of the first 盥 箆 _ - _ shoulder knife semi-magnified state, can be made in different
斜/、弟-頻率。該雙頻功率放大器包含U 、、及：一輸人匹配單元，電性地連接至於該雙頻功率放大 ΐ級二=，=間匹配單元，其電性地連接至該第—增益級與該第二功 出端與該第二功率級之間。㈣ 接至该雙頻功率放大器之一信號輸 增益。驾 f s q —增减_於提健雙頻功率放大ϋ之最大 元係用健功輕大11之最大功率。該輸入匹配單 凡你用於匹配該雙頻功率放大 卞 該雙頻功率放大器之最大功率特性U特性。該輸出匹配單元係用於匹配1 雙頻之雙頻帶功率放大器之—特徵，該中間匹配單元係用於匹配該 雙頻功率放大器之最大增益。 配=本1明之雙頻帶功率放大器之另一特徵，該輸入匹配單元、該中間匹 :::=，，系皆為包含串聯之一第-電容器與-第-電感器，再 雷 —第—電感11之架構。其中串聯之該第-電容器鱼該第- 電感讀用於將該匹配單元之輸入阻抗移至低阻抗值，再利用並聯之該第二電 P·则-TW-發明專利申靖書势說明書 -final 1248253 〜μ弟二電感器之有效電抗值將該匹配料之輸出阻抗在該第-頻率_ 弟一頻率同時移至5〇歐姆。 、/、以 根據本發明之雙頻帶功率放大器 與該第二功率級係為ΑΒ類放大器。β W級係為仙類放大器 頰帶功率放大H由於姻較少的元件， 晶片上實現 ，據本發_揭示之雙鮮功率放大狀其_不同雙轉之匹配電路失 」選擇方式，能使電路架構簡單且翻於不同頻率。另—方面，本發明的雙 可以較低的製作成本在混成電路或單石 【圖式簡單說明】 明日ϋΓ其他㈣、特徵、和優職更鴨，τ文特舉本發 平乂仏貝施例，亚配合所附圖示，作詳細說明如下。 第1圖顯示根據本發明第-實施例之雙頻帶功率放大器之系統圖· 的㈣崎態咖㈣_ 一 一） w圖顯示根據本發明第-實施例之雙頻帶功辑大器之t際電路圖； 網路弟之4等==_較佳實施例之第1圖中’該等匹配單元之雙頻匹配 第5圖說明雙頻匹配網路在洳^c/zari軌跡； 第6圖顯示根據本發明之雙頻帶功率放大器之輸入返回損失· ^斷根據本發明之雙頻帶功率放大器在謂Hz之輸出‘以及功 千附加效率之量測圖；以及 第8圖顯示根據本發明之雙頻帶功率放大 率附加效率之量測圖。' 《输出PldB以及功 【實施方式】 雖然本發明可表現為不_式之實施例，但_所示者及於下文中說明者 '1021-TW- 發明專利申請書贽說明書-fin 1248253 係為本發明可之較佳實施例，並請了解本文所揭示者係考量為本發明之一範· 例，且亚非意圖用以將本發明限制於圖示及/或所描述之特定實施例中。乾· 月乡考第1圖，其顯示根據本發明較佳實施例之一種雙頻帶功率放大哭之二 統圖：該功率放大器G5主要包含-第—增益級4G ;-第二功率級6G ; * 二h 3G ’電性地連接至於該雙頻功率放大器Q5之—信號輸人端w與^第 二增益級4G之間；—中間匹配單元5()，其電性地連接至該第—增益級奶與該 弟二功率級60之間；以及—輸出匹配單元7G，電性地連接至該雙頻功率放^ 器〇5之-信號輸出端20與該第二功率級6〇之間。該第一增益級4〇係 供該功率放大器05之最大增益。該第二功率級6〇係用於提供該雙頻功率 放大器05之最大功率。該輸入匹配單元3〇係用於匹配該雙頻功率放大器〇5 _ 之最大增益特性。該輸出匹配單元70係用於匹配該雙頻功率放大器〇5之旧 功率特性。 # 該第一增益級40與該第二功率級6〇係被設計於能夠在所希望的通帶範園内 提供平坦的增益。該增益級的電晶體形式可以被下列種類實現：雙載子電晶體、 (BJT)，異質接面雙載子電晶體(HBT)，冑電子移動率電晶體(hem丁），假型高電 子移動率電晶體(PHEMT)，互補式金屬氧化半導場效電晶體(CM〇s)以及側面擴 散式金屬氧化半導場效電晶體(LDM〇s)。其中，假型高電子移動率電晶體係^ 用於微波至釐米波範圍的增益級。用於該增益級之半導體基板材料包含有··矽、馨 絕緣層上矽(soi)、矽鍺化合物(siGe)、砷化鎵(GaAs)、碗化銦(Inp)與石夕錯_碳化 合物。 戎第一增盈級4 0與該第二功率級6 〇依不同的偏壓類別代表著對功率放大器 的輸出功率、線性度、功率增益或功率增加效率有不同的效能。第2圖說明依不 同直偏壓電路的靜悲工作點（qUiescent 〇perat;jng 口以放）的功率增益級的分 類。 (1)A類放大器：其偏壓點位於，屬電晶體線性區，輸入與輸出訊號 P-1021-TW-發明專利申請書蛰說明書彳ina丨 .0 _ 1248253 但因其輪入直流 個效率低的放大 呈線性關係，不會有很大_波發生，故其線性度是最好的， 為持續導通’在沒有訊號輸人時仍會消耗直流功率，所以它肩 器，在理想的情況下，最高效率為5〇 %。 ’其效率因 ’因此會產 下’最南的 ⑺聰放大器：如無訊號輸入時，電晶體將不會雜直流功率 此而提高。由於其偏細好械趨，工作職為輸人訊號的半週 生大量的驗失真，線性度因此而降低。B類放大踩理想的情況 效率可達78.5 %。 / (3)AB類放大H :此類放大II特性介於a類與B類放大器之間，因為其偏壓 點位於此兩者之間，改善了B類嚴重譜波失真的問題，降低了效率而增二了 = 性度。 9 ⑷C類放大器：其操作原理與B類放大器相#類似，會有輸人訊號被截掉 的現象’但是其導通角度（conductionangle)是小於180度的，所以輸入弦波只 有少於半波通過而放大，產生_、的高次諧波，屬於非線性放大器，工作效率 比B類放大器為咼，當導通角趨近於〇，可高達1⑻％。 由於偏壓點可以決定電路的輸出功率、增益以及效率等重要的特性。在本 發明中，該第-增益級4G與該第二功率細較佳係為侧貞放大器。 在本發明中，該輸入匹配單元30係用於匹配該雙頻功率放大器Μ之最大 增益特性。該輸出匹配單元7G係用於匹配該雙頻功率放Q5之最大功率特_ 性。然而需注意的是，在該第一增益級4〇與該第二功率級6〇之間的該中間匹 配早7L 50可以是最大增益或是最大辨的匹配。t該第—增益級仙之輸出之 功率足夠推動該第二功率級6G時，該巾間匹配單元％可採用最大增益匹配。 反之’當該第一增益級40之輸出之功率不足以推動該第二功率級6〇時，該中 間匹配單元50可採用最大功率匹配。一般所謂的最大增益匹配，係指匹配單元 之阻抗為所被匹配的電路的輸入阻抗之共輛。而該輸出匹配單元％匹配到最大 功率輸出阻抗點之方法有⑴大訊號非線性模型；⑺Cripps法則；以及⑺負載 102丨·TW•發明專利申請書蟄說明書-final -9 - 1248253 調整法。 第3圖顯示根據本發明第一實施例之雙 輸入匹配單元⑽、該中間匹配單元15G無 ，之貫際電路圖。該 聯之-第-電容器Cl與—第_電 : '早:1:係皆為包:串 雷咸哭L夕加谨。兮μ 丹一弟二電容器〇2與一第二 電^ 2之木構该弟-增益級140與該第二功率級 ==Γ合該第，級14。增二= =係纟湖於射頻叫hGeking)之輸接錢 二功率級160的適當端點。 曰皿夂 弟 由於本發明之功率放大器〇5係為單—電路架構操作在不同的工作頻率。 因^輸人匹配單元30、該她配私5Q與該輸出匹配單元％之電路皆 =滿足。㈣4 _，_爾她較佳實施例 ^匹配早就雙触_路之較電關。該輸人匹配單元 3〇、斜間匹配早元5〇與該輸出匹配單元％係皆為包含串聯之—第一電容 =Γ第一電感器Ll 22，再並聯一第二電容器C2U與-第二電挑 第5圖為雙頻匹配網路在史密斯圖(Smith軌跡。配合第頂，立中 串聯之第-電容器⑽與該第—電感紅丨22係用於將該匹配單蚊輸綠 抗移至低阻抗值，再利用並聯之該第二電容器C2U與該第二電感哭^ u之 有效電抗值將該等眺單元之輸出阻抗在該第—頻率與該第二^同時移至 5_。其說明如下：假設匹配電路必須在兩個頻率⑽力，⑽同時將^ 完成匹配，在不同頻率的阻抗值—般均不同，如_示為1中—可#情兄。 串聯之第-電容器Cl21與該第-電感紅,22在頻率/呈現等效輯性，因 此將在頻率yi之zin移至a點；並聯-第二電容器C2ll與_第二電❹^ 12 在頻率/丨呈現等效電容性，因此將a轉至％歐姆。另者，串聯之y 一· 器Cl21與該第-電感器L, 22在頻率/2呈現較小之等效電感性，因此將在頻 P-丨021-TW-發明專利申靖書暨說明書_fina| -10 - 1248253 率A之Zin移至B點，並聯一弟一電容器C211與一第—曾成π τ 昂電感益L2 12在頻率a 呈現等效電感性，因此將B點移至50歐姆。嚴謹數學的推導如下： 若該增益級之輸雄抗&在該第-鱗與鄕二頻料分戦柄不 與柄&緩，在經過串聯第-電容器Cl21與第―電感器Li22之後輸入阻抗Zjn 變成Zp，此時厶在該第一頻率與該第二頻率時分別為： lnOblique /, brother - frequency. The dual-frequency power amplifier includes a U, and a: a matching unit, electrically connected to the dual-frequency power amplifier 二 two =, = inter-matching unit, electrically connected to the first-gain stage and the Between the second workout and the second power stage. (4) Connect to the signal input gain of one of the dual-frequency power amplifiers. Driving f s q — increase or decrease _ in the health of the dual-frequency power amplifier ϋ the largest power of the power system is 11 power. This input matches the U characteristic of the maximum power characteristic of the dual-frequency power amplifier that you use to match the dual-frequency power amplifier. The output matching unit is used to match the characteristics of a dual frequency dual band power amplifier for matching the maximum gain of the dual frequency power amplifier. According to another feature of the dual-band power amplifier of the present invention, the input matching unit and the intermediate pair:::=, all of which comprise a series-first capacitor and a --inductor, and then a lightning-first The architecture of the inductor 11. The first-inductor read of the first-capacitor fish in series is used to shift the input impedance of the matching unit to a low-impedance value, and then the parallel-connected second electric P-th-TW-invention patent Shenjing Book Manual-final 1248253 The effective reactance value of the μ-di inductor is to shift the output impedance of the matched material to 5 〇 ohms at the same frequency. The dual-band power amplifier and the second power stage according to the present invention are ΑΒ-type amplifiers. The β W-class is a power amplifier for the singular amplifier. The power amplification of the singular amplifier is due to the fact that the components of the singularity of the singularity are less than the components of the singularity of the singularity. The circuit architecture is simple and turns to different frequencies. On the other hand, the double production cost of the present invention can be reduced in the production circuit or the single stone [simple description of the drawings] tomorrow (4), features, and excellent jobs, and the τ article specializes in the hairpin For example, the sub-assembly with the attached drawings will be described in detail below. 1 is a diagram showing a system diagram of a dual-band power amplifier according to a first embodiment of the present invention. FIG. 4 is a diagram showing an inter-circuit of a dual-band power amplifier according to a first embodiment of the present invention. 4, etc. ==_ In the first diagram of the preferred embodiment, the dual-frequency matching of the matching units is shown in Fig. 5, which illustrates the dual-frequency matching network in the 洳^c/zari trajectory; The input return loss of the dual-band power amplifier of the present invention is broken by the output of the dual-band power amplifier according to the present invention at the output of Hz and the additional efficiency of the power; and FIG. 8 shows the dual-band power according to the present invention. Magnification plus the measure of efficiency. 'Output PldB and work [Embodiment] Although the present invention can be embodied as an embodiment of the formula, the description of the '1021-TW- invention patent application-fin 1248253 is The present invention may be embodied in a preferred embodiment, and it is to be understood that the invention is intended to be illustrative of the invention, and that the invention is intended to limit the invention to the particular embodiments illustrated and/or described. . FIG. 1 is a diagram showing a dual-band power amplification crying according to a preferred embodiment of the present invention: the power amplifier G5 mainly includes a -th gain stage 4G; a second power stage 6G; * two h 3G 'electrically connected to the dual-frequency power amplifier Q5 - between the signal input terminal w and the second gain stage 4G; - an intermediate matching unit 5 (), which is electrically connected to the first - Between the gain stage milk and the second power stage 60; and the output matching unit 7G is electrically connected between the signal output terminal 20 of the dual frequency power amplifier 〇5 and the second power stage 6〇 . The first gain stage 4 is the maximum gain of the power amplifier 05. The second power stage 6 is used to provide the maximum power of the dual frequency power amplifier 05. The input matching unit 3 is used to match the maximum gain characteristic of the dual-frequency power amplifier 〇5_. The output matching unit 70 is for matching the old power characteristics of the dual frequency power amplifier 〇5. # The first gain stage 40 and the second power stage 6 are designed to provide a flat gain in the desired passband. The transistor form of the gain stage can be realized by the following types: bipolar transistor, (BJT), heterojunction bipolar transistor (HBT), germanium electron mobility transistor (hem), pseudo high electron Mobility Transistor (PHEMT), Complementary Metal Oxide Semiconductor Field Transistor (CM〇s) and Side Diffused Metal Oxide Semiconductor Field Transistor (LDM〇s). Among them, the pseudo-type high electron mobility electric crystal system ^ is used for the gain level of the microwave to the centimeter wave range. The semiconductor substrate material used for the gain stage includes ·, 绝缘, insulating layer (soi), yttrium compound (siGe), gallium arsenide (GaAs), bowl indium (Inp), and Shi Xi wrong _ carbon Compound.戎 The first gain level 40 and the second power stage 6 different bias categories represent different performances for the power amplifier output power, linearity, power gain or power increase efficiency. Figure 2 illustrates the classification of the power gain stages of the hysteresis operating point (qUiescent 〇perat; jng port) of different straight bias circuits. (1) Class A amplifier: its bias point is located in the linear region of the transistor, input and output signals P-1021-TW-Invention patent application 蛰 manual 彳ina丨.0 _ 1248253 but due to its round-trip DC efficiency The low amplification is linear, and there is no big _ wave, so its linearity is the best. For continuous conduction, it will consume DC power when no signal is input, so it is in the ideal situation. The highest efficiency is 〇%. 'The efficiency factor' will result in 'the southernmost (7) Cong amplifier: If there is no signal input, the transistor will not increase the DC power. Due to its fineness and good mechanical behavior, the job is a half-cycle of the input signal, and the linearity is reduced. Class B amplification steps ideally with an efficiency of 78.5 %. / (3) Class AB amplification H: This type of amplification II is between the class A and class B amplifiers. Because the bias point is between the two, the problem of class B severe spectral distortion is improved, and the problem is reduced. Efficiency increased by 2 = sex. 9 (4) Class C amplifier: Its operation principle is similar to that of Class B amplifier phase #, there will be a phenomenon that the input signal is cut off' but the conduction angle is less than 180 degrees, so the input chord is only less than half a wave. The amplification, which produces the higher harmonics of _, is a non-linear amplifier, and the working efficiency is higher than that of the class B amplifier. When the conduction angle approaches 〇, it can be as high as 1 (8)%. Because of the bias point, important characteristics such as the output power, gain, and efficiency of the circuit can be determined. In the present invention, the first gain stage 4G and the second power level are preferably side chirped amplifiers. In the present invention, the input matching unit 30 is for matching the maximum gain characteristic of the dual frequency power amplifier. The output matching unit 7G is configured to match the maximum power characteristic of the dual-frequency power amplifier Q5. It should be noted, however, that the intermediate match between the first gain stage 4〇 and the second power stage 6〇 early 7L 50 may be the maximum gain or the most discriminant match. When the power of the output of the first gain stage is sufficient to push the second power stage 6G, the inter-shielding matching unit % may adopt maximum gain matching. Conversely, when the power of the output of the first gain stage 40 is insufficient to push the second power stage 6〇, the intermediate matching unit 50 can employ maximum power matching. Generally speaking, the maximum gain matching means that the impedance of the matching unit is a common vehicle of the input impedance of the matched circuit. The method of matching the output matching unit % to the maximum power output impedance point includes (1) large signal nonlinear model; (7) Cripps rule; and (7) load 102丨·TW• invention patent application specification-final -9-1248253 adjustment method. Fig. 3 is a cross-sectional view showing the double input matching unit (10) and the intermediate matching unit 15G in the first embodiment according to the first embodiment of the present invention. The joint - the first capacitor - and the - _ electricity: 'early: 1: are all for the package: string Lei Xian cry L Xi Jia Jin.兮μ丹一弟二电容器2 and a second electric circuit are constructed by the younger-gain stage 140 and the second power stage ==. Increase 2 = = is the appropriate end point of the power level of the power level of the two power levels 160. Since the power amplifier 〇5 of the present invention operates in a single-circuit architecture at different operating frequencies. The circuit of the input matching unit 30, the private 5Q, and the output matching unit is satisfied. (4) 4 _, _ her preferred embodiment ^ match the long-term double-touch _ road than the electric switch. The input matching unit 3〇, the oblique matching early element 5〇 and the output matching unit % are all connected in series—the first capacitor=Γfirst inductor L1222, and then the second capacitor C2U and-parallel The second picture is the dual-frequency matching network in the Smith chart (Smith track. With the top, the first series-capacitor (10) and the first-inductor red 丨 22 series are used to match the single mosquito to the green Moving to a low impedance value, and using the effective reactance value of the second capacitor C2U and the second inductor in parallel, the output impedance of the unit is shifted to 5_ at the same time and the second frequency. The description is as follows: Assume that the matching circuit must be at two frequencies (10) force, (10) and ^ will be matched at the same time, the impedance values at different frequencies are generally different, such as _ is shown as 1 - can be #情兄. Series of capacitors - series Cl21 and the first-inductance red, 22 at the frequency / presentation equivalent, so will move zin at frequency yi to point a; parallel - second capacitor C2ll and _ second ❹ ^ 12 in frequency / 丨 presentation, etc. Capacitive, so turn a to % ohm. In addition, the series y · C1 and the first inductor L, 22 at the frequency / 2 presents a smaller equivalent inductivity, so will be in the frequency P-丨021-TW-invention patent Shenjing book and manual _fina| -10 - 1248253 rate A Zin moved to point B, parallel one brother one Capacitor C211 and a pre- π τ ang inductance L2 12 exhibit equivalent inductivity at frequency a, thus shifting point B to 50 ohms. The rigorous mathematical derivation is as follows: If the gain stage is the male resistance & The first scale and the second frequency of the 鳞 不 不 不 不 不 & & , , , , , , , , , , , , , , , , , , , , , , , , 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入 输入The two frequencies are: ln
(ω\)= ^ + 7 (ω2 )~ ^ J(ω\)= ^ + 7 (ω2 )~ ^ J
AA
MGMG
+ MA (i) 其中叫舆叫分別指在該第一頻率與該第二頻率時之角頻率(叫>6)2)。 」然後並聯第二錢H L212和第二電容器C2ll，此時阻抗必祕配至特性 阻抗z0，一般而言為50歐姆。所以，解出Li、l2、q、c2· (2) ：Ra2 + ω2/Ζ0ΚΒ - Rb2 - ω]ΧΑ + ω}2 -ω22 <-ω22 1 ωι〇)ι ω2 m2 +ω\ ylz〇K -^2ΧΑ+ωλΧΒ (3) l2+ MA (i) where squeak refers to the angular frequency (called > 6) 2) at the first frequency and the second frequency, respectively. Then parallel the second money H L212 and the second capacitor C211, at which point the impedance must be matched to the characteristic impedance z0, which is generally 50 ohms. Therefore, solve for Li, l2, q, c2· (2) :Ra2 + ω2/Ζ0ΚΒ - Rb2 - ω]ΧΑ + ω}2 -ω22 <-ω22 1 ωι〇)ι ω2 m2 +ω\ ylz〇K -^2ΧΑ+ωλΧΒ (3) l2
RaRbZARaRbZA
[RaXb -XaRb)Cx +(Rb-Ra)L,Cx +ω]2ΚΑ-ω22ΚΒ ⑷ (5) C2 - Ra + co^RAC\XB ~ ω\ΚΒ^ΧΑ + (^12^ ~ 〇^Ra)lxCa - ω22 ^ 舉例來說，若該雙頻功率放大器〇5設計在2.44 GHz與5.25 GHz。且其第 一增益級40之輸入阻抗zin在2.44 GHz與5.25 GHz分別為8.45-j23.9 Ω與 8_15士1.1 Ω，而該輸入匹配單元30係用於匹配該雙頻功率放大器〇5之最大增 盈特性。以第4圖之雙匹配網路實現之該輸入匹配單元30，其Lfl.05 nH、 P-1021-TW-發明專利申請"說明書“a丨 · π _ 1248253[RaXb -XaRb)Cx +(Rb-Ra)L,Cx +ω]2ΚΑ-ω22ΚΒ (4) (5) C2 - Ra + co^RAC\XB ~ ω\ΚΒ^ΧΑ + (^12^ ~ 〇^Ra) lxCa - ω22 ^ For example, if the dual-frequency power amplifier 〇5 is designed at 2.44 GHz and 5.25 GHz. And the input impedance zin of the first gain stage 40 is 8.45-j23.9 Ω and 8_15±1.1 Ω at 2.44 GHz and 5.25 GHz, respectively, and the input matching unit 30 is used to match the maximum of the dual-frequency power amplifier 〇5. Increasing profit characteristics. The input matching unit 30 implemented by the double matching network of FIG. 4, the Lfl.05 nH, P-1021-TW-invention patent application " manual "a丨 · π _ 1248253
Ci弓·96 PF、L2=0.78 nH、C尸2·55 PF。同理可分別求得該中間匹配單元5〇與該 輪出匹配單兀7〇在所需要的頻輕自&條件下之電容器與電感㈣元件值。整個 “路木構好之後’可以使用而頻電路ADS或其他商用軟體來模挺已求得最佳化 之電路參數。需注意的是，該雙頻功率放大器，其中該雙頻功率放大器以混成 電路方式製作或以單石電路方式製作於單一半導體基版上。 在設計實例中，使用於麵8〇2·祕/g之頻帶為24〇〇〜2483 5嫩以及 5350 MHz ’輸出pldB經由系統規劃需要26 dBm。採用兩級架構，該第 一增益級40與第二功率級6G分職TC2481與心71之舰则_場效 電晶體，且該第一增益級40偏麼在m、W00 mA，該第二功率級6〇需 要大功率輸出，選擇偏壓在Vds=8v、Ie=25GmA。輸入匹配單元触中間 匹配早二50採用最大增益之匹配，輸出匹配單元兀則為最大輸出功率之匹配。 茶考第6圖，其顯示根據本發明實施例為該雙頻帶功率放大器之2饿此 量測與模擬_。經設計在上述讀财制—組可實現之解後，將數 ^模擬倾，擬縣在綱〜繼5簡•反侧切她；量測 在綱鐵5 MHz輸入反射損失>1〇細。在a%〜奶〇耻輸入反娜 >12.9dB ;在 5150〜535〇MHz 輸入反射損失>i3dB。 、 參考第7圖’其顯示根據本發明第一實施例為該雙Ci bow·96 PF, L2=0.78 nH, C corpse 2·55 PF. Similarly, the intermediate matching unit 5 〇 and the round matching unit 求 7 〇 can be respectively obtained under the required frequency light & condition capacitor and inductance (four) component values. After the whole road is constructed, the ADS or other commercial software can be used to simulate the circuit parameters that have been optimized. It should be noted that the dual-frequency power amplifier, in which the dual-frequency power amplifier is mixed Circuit mode fabrication or single-rock circuit fabrication on a single semiconductor substrate. In the design example, the frequency band used for the surface 8〇2·sec/g is 24〇〇~2483 5 nen and 5350 MHz 'output pldB via the system The planning requires 26 dBm. The two-stage architecture is adopted. The first gain stage 40 and the second power stage 6G are divided into the TC2481 and the heart 71 ship _ field effect transistor, and the first gain stage 40 is at m, W00. mA, the second power stage 6〇 requires high power output, the selection bias voltage is Vds=8v, Ie=25GmA. The input matching unit touches the middle matching early two 50 with the maximum gain matching, and the output matching unit 兀 is the maximum output power. Matching. The tea test Fig. 6 shows the measurement and simulation of the dual-band power amplifier according to an embodiment of the present invention. After designing the solution that can be realized by the above-mentioned reading financial system, the number is Simulated dumping, the county is in the outline ~ following 5 • Cut her on the opposite side; measure the reflection loss at the 5 MHz input of Ganggang > 1 〇. In a% ~ milk shame input anti-na > 12.9dB; input reflection loss at 5150 ~ 535 〇 MHz > i3dB. Referring to FIG. 7 ' it shows the double according to the first embodiment of the present invention
PldB ^^^0„(p〇Wer.added efficiency ^ { 增益壓縮點係指當功率增益低於線性功率增益1肪時。量:士 時為20.3 %。HZ時’輸出ΡΜΒ=28 ^、功率附加效率在輪出功率糾㈣ 參考第8圖，其顯示根據本發明第一實施例為該雙 pldB以及功率附加效率之量測圖。量測結果在5 25 g力车放二 舰、功率附加效率在輸出功率為PidB點時為2〇%。、輸出P】dB=27·9 -ι〇2丨-TW-發明專利申靖書贽說明書 fina 1 -12 - 1248253 同日士以^"!本⑧明之功效在於該雙頻帶功率放大器之電路⑽簡單且可以 问日抑4電路或單石晶#方式實現。 構間早且了以 =述圖示可知，本發輯卿之雙歸功率敎財魏在不同頻率間 ^極以增益與功率輸出。雖然本發明已以前述較佳實施例揭示，然其並 a用以限林發明，任何熟習此技藝者，在*_本發社精神和範圍内， 田可作各種之更動與修改。如上述的解釋，都可以作各型式的修正與變化， 而不會破壞此發明的精神。因此本發明之保護範圍當視後附之申請專利範圍 所界定者為準。 【圖式元件符號說明】 春 5放大器系統 10信號輸入端 20信號輸出端 11第二電容器 12第二電感器 21第一電容器 22第一電感器 30輸入匹配單元 40第一增益級 50中間匹配單元60第二功率級 70輸出匹配單元 Ρ·1021-TW-發明專利申請書蝥说明書-final -13 -PldB ^^^0„(p〇Wer.added efficiency ^ { Gain compression point refers to when the power gain is lower than the linear power gain 1 fat. The amount is 20.3% when it is ±. When HZ is 'output ΡΜΒ=28 ^, power Additional efficiency in turn-off power correction (4) Referring to Fig. 8, which shows the measurement of the double pldB and the power added efficiency according to the first embodiment of the present invention. The measurement result is placed on the 5 25 g force car, and the power is attached. The efficiency is 2〇% when the output power is the PidB point. The output P]dB=27·9 -ι〇2丨-TW-Invention patent Shenjing Book 贽 specification fina 1 -12 - 1248253 The same day to ^^quot;! Ben 8 The function of Ming is that the circuit (10) of the dual-band power amplifier is simple and can be implemented by the method of day 4 or single stone. The structure is early and the figure is shown in the figure. The gain and power are output between different frequencies. Although the invention has been disclosed in the foregoing preferred embodiments, it is used to limit the invention, and anyone skilled in the art is within the spirit and scope of the present invention. , Tian can make various changes and modifications. As explained above, all types of corrections can be made. The scope of the present invention is defined by the scope of the appended claims. End 11 second capacitor 12 second inductor 21 first capacitor 22 first inductor 30 input matching unit 40 first gain stage 50 intermediate matching unit 60 second power stage 70 output matching unit Ρ·1021-TW-invention patent application Book description - final -13 -