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TWI248095B - Ceramic powder composition, ceramic material, and laminated ceramic condenser comprised thereof - Google Patents

Ceramic powder composition, ceramic material, and laminated ceramic condenser comprised thereof Download PDF

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Publication number
TWI248095B
TWI248095B TW093138090A TW93138090A TWI248095B TW I248095 B TWI248095 B TW I248095B TW 093138090 A TW093138090 A TW 093138090A TW 93138090 A TW93138090 A TW 93138090A TW I248095 B TWI248095 B TW I248095B
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TW
Taiwan
Prior art keywords
ceramic
sintering
content
composition
ceramic powder
Prior art date
Application number
TW093138090A
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English (en)
Other versions
TW200620345A (en
Inventor
Ting-An Jian
Shiou-Shiang Pei
Original Assignee
Darfon Electronics Corp
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Publication date
Application filed by Darfon Electronics Corp filed Critical Darfon Electronics Corp
Priority to TW093138090A priority Critical patent/TWI248095B/zh
Priority to US11/295,529 priority patent/US7435697B2/en
Application granted granted Critical
Publication of TWI248095B publication Critical patent/TWI248095B/zh
Publication of TW200620345A publication Critical patent/TW200620345A/zh
Priority to US11/835,893 priority patent/US7560406B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
    • H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
    • C—CHEMISTRY; METALLURGY
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
    • C04B35/49—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/62605—Treating the starting powders individually or as mixtures
    • C04B35/62645—Thermal treatment of powders or mixtures thereof other than sintering
    • C04B35/62655—Drying, e.g. freeze-drying, spray-drying, microwave or supercritical drying
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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    • C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
    • C04B35/6303—Inorganic additives
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    • H01G4/1236—Ceramic dielectrics characterised by the ceramic dielectric material based on zirconium oxides or zirconates
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2311/00—Metals, their alloys or their compounds
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Description

1248095 九、發明說明： 發明所屬之技術領域 本發明係關於一種陶瓷組合物，特別係關於用於被動元件的陶究粉體 組合物。 先前技術 習知的積層陶瓷電容器，通常係使用以鈦酸鹽為主成分的陶莞材料作 為其介電質。然而鈦酸鹽在中性或還原氣氛下燒結時，會發生還原反應而 呈現半導體的性質，而必須在氧化氣氛下燒結。因此，在内電極材料的選 擇方面，必須符合以下的要求：（1)在氧化氣氛下仍不會被氧化；（2)熔點高 於燒結溫度。因此，必須使用鈀、鉑等貴金屬作為内電極，大幅提高了積 層陶瓷電容器的製程成本。
Kojmia等人在美國專利us 6，118,648號揭露一種非還原性的陶瓷材 料，其主成分為[(CaxSrdOJWTiyZrJOd，其中〇殳2、把妙 〇.75把1.04，其他成分包含a2〜5m〇1 %的氧化鐘、〇1〜i〇m〇i %的氧化銘、 與〇·5〜15mol %的[(BazCai.z)〇]vSi〇2，其中〇灸卜〇妙如。其燒結溫度 不高於13GG°C，可使祕點為約1455t：的鎳來作為内電極。 然而，隨著高頻元件的需求，需要使用低阻抗的材料例如棘作為内 1085^ ^ ^KoJlmaf 的燒結溫度降至祕。C以下的情形下，以K〇j聰等人所揭露的陶紐料來 搭配銅内電極的使用是有困難的。 發明内容 有鑑於此，本發明的主要目的係提供一種陶完粉體組合物，其燒結溫 0798-A20604TWF(N2)；C04035;DWWANG s 1248095 度可以低於銅的熔點，使得低阻抗的銅可以作為積層陶瓷電容器的内電極。 為達成本發明之上述目的，本發明係提供一種陶瓷粉體組 合物’包含：原料陶瓷粉末，含量為80〜90 wt%，其組成如下： (SrxCai_x)TiyZri-y03，其中 OSxSl、O^ySO.l ;以及；助燒結劑， 含量為10〜20 wt%，係擇自Ma20、MbO、Mc203、與Md02之氧 化物所組成的族群，其中元素Ma為鋰、鈉、鉀、或上述之組 合，兀素Μ13為鈹、鎂、鈣、锶、鋇、或上述之組合，元素Mc 為删、銘、鎵、或上述之組合，元素Md為矽、鍺、或上述之 組合。 本發明係又提供一種陶瓷材料，係由上述陶瓷粉體組合物 所燒結而成，其燒結溫度為900〜l〇〇〇°C。 本發明係又提供一種積層陶瓷電容器，包含：一陶瓷介電 貝’係由上述陶瓷粉體組合物所燒結而成；複數個内電極，大 體上平行延伸於上述陶瓷介電質内；以及至少一對外電極，曝 鉻於上述陶瓷介電質外，並電性連接上述内電極。 實施方式 為了讓本發明之上述和其他目的、特徵、和優點能更明顯易懂，下文 特舉一較佳實施例，並配合所附圖示，作詳細說明如下： 本案發明人發現，於(srxcai_x)TiyZri-y〇3(0汹、吩负1)的喊 中加特定的助燒結劑例如為擇自]^2〇、Mb〇、Μ^〇3、與Md〇2之氧化物所 組成的族群(元素MH納、鉀、或上述之組合，元素Mb為鈹、鎮、妈、 〇798-A20604TWF(N2);C04035;DWWANG 6 Ϊ248095 銷、鋇、或上述之組合，絲銘、鎵、或上述之組合，元素Md 為夕鍺、或上述之組合)時，可有效降低燒結溫度至9〇〇〜屬〇。〇，此溫度 低於銅的n使得低阻抗的銅可以作為積層陶£電容n的内電極。其中，， Μ 〇2之3里較好為5〇wt%以上、Μ%〇3之含量較好為i〇wt%以下、Mb〇的· 含量較好為10〜3〇wt%、Μ\0的含量較好為10wt%以下。 本發明之助燒結劑最簡單者為四種成分之組合，即為在Μ、〇、Mb〇、 M2〇3與M〇2中，各選取一種成分，例如為祕也从泌彻之、 i2〇 BaO»B2〇rSi〇2、或是以前列之同族元素相互替換，例如以陶3或κ2〇 ^ 替換 Li2〇 ’ 以 BeO、MgO、CaO、或 SrO 替換 BaO，以 Ga203 替換 Α1203 或氏〇3，以Ge〇2替換Si〇2 ;亦可以在Μ、〇、Mb〇、與Md〇2中，各選取 種成刀’且在M2〇3巾，選取二種成分，而具有五種成分，較佳為 Li20_Ba0_B20rAl20rSi02，更可以將燒結溫度降低至95〇t：以下，亦可以 如上所述以别列之同族元素相互替換。另外亦可以在、
與_中，各選取一或多種成分，而得到更多種成分的助燒結劑，視使用 者的製程條件而定。 I 本么明主要關於-新穎的陶兗粉體組合物，其係含依不同比例混合之 成分，包含陶錄末與助燒結劑。上述陶錄末包含版心，其 中〇立3、0分切_1 ;上述助燒結劑係擇自Ma2〇、Mb〇、MC2〇3、與Md〇2 之氧化物所組成的族群，其中元素Ma為鋰、納、鉀、或上述之組合，元素 Mb為鈹、鎮、約、錄、鋇、或上述之組合，元素MC為删、銘、蘇、或上 述之組合，元^Md為石夕、鍺、或上述之組合。上述陶兗粉末與助燒結劑之 〇798-A20604TWF(N2);C04035;DWWANG 7 1248095 比例並無特別_，可視所需成品之性f而調整。較佳者，本發明陶竟粉 體組合物齡8G〜9Gwt%的上粉紐核糾轉的上述贱結劑。更 佳為上述陶錄柄成分進_步符合;歧在本發日㈣紐體組 合物中’選雜地添加-摻騎，其紐的氧化物、_氧化物、或上述 之組合。上述_物在本發_錄敎合物巾的含量㈣為不大於i
Wt% 0
本發明喊籠齡物轉顧祕積層m容元件如第丨圖所 示。於此細巾，麟本發_錄驗合物財機健混合形成裝料； 再經刮刀«料祕生域片；雜概_電極3交互赌後層壓； 其後在9〇(M_t；的溫度下共燒結，上述生胚薄片就成為第丨圖中_竟 材料2，係作為積層陶瓷電容元件的介電體層。 此時，内電極3係大體上平行延伸於該陶竟介電質内，其各端部係交 互曝露於材料2對向之二表面上。最後，在陶紐料2對向之二表面 上形成-對的外電極4，並使其分別電性連接於對應的軸電極3，而構成 本發明之積層陶瓷電容器。
將本發明陶錄體組合物燒結而成為陶莞材料2時，其燒結氣氛較好 為氫、氮齡之還縣氛，亦可以在—般軌氣魏下燒結。而喊材料2 之實際密度與理論密度之比值較好為不小於 於〇.9、不大於卜而内電極3較 好為銅。 但不限制本發a月範圍。凡熟悉 蓋於本發明之精神和範圍内。 下列實施例係用以進一步說明本發明， 此項技術之人士所知之替代與修飾，均仍涵 0798-A20604TWF(N2);C04035;DWWANG 8 1248095 在以下實施例中，其原料陶瓷粉末係使用：（ShCakyriyZbyOs，其中 OSxSl、0$y$〇.l(以下簡稱「原料陶瓷粉末」）；而所使用的助燒結劑的組成 為：Li2〇-BaaB2(VAl2〇3_Si〇2(以下簡稱「助燒結劑」），其中Si〇2的含量· 為50wt%以上、BaO的含量為10〜3〇wt%、β2〇3-Α12〇3的含量為1〇斯％以、 下、Li20的含量為l〇wt%以下。 【實施例1】 使用約95wt%的原料陶瓷粉末與約5加％的助燒結劑，過4〇〇號筛 網後與有機載體(例如PVA)混合形成漿料後，以約5kg/cm2的壓力將其壓成馨 生胚。將準備好的生胚分成六組，分別在兩種不同的燒結氣氛(空氣、氮氫 混合氣氛）、三種不同的燒結溫度(約9〇(rc、約95〇。〇、約1〇〇〇c>c)的組合條 件下，燒結約120分鐘。燒結製程主要分成二階段。第一階段為脫脂。生 胚在約l°C/min的加熱速度下，緩慢清除生胚内的有機黏結劑，為確實完全 清除，溫度在約3〇〇°C停留6〇分鐘。第二階段則在A氣或氮氫混合氣體的 氣氛下，將試片直接推入爐中。試片在約2〇〇分鐘内達燒結溫度後，燒結 溫度分別是約90(TC、約950°C、約lootrc，再停留約120分鐘，空冷以停 # 止燒結。再測量燒結體的密度，並與其理論密度比較，將結果列於表一， 其燒結密度與理論密度之比值均小於90 %。 【實施例2】 本貝施例除了將陶莞粉體組合物的成分改為約9〇wt%的原料陶究粉 ， 末與約10 wt%的助燒結劑外，其餘製程與量測程序均與實施例丨相同。其 中，將約90wt%的原料陶錄末與約10加％ _燒結劑以球磨機充分混 〇798-A20604TWF(N2);C04035;DWWANG 9 1248095 合、並過400號篩網。燒結後測量燒結體的密度，並與其理論密度比較， 將結果列於表一’其燒結密度與理論密度之比值可大於9〇0/〇。 【實施例3A】 本實施例除了將陶瓷粉體組合物的成分改為約9〇wt%的原料陶瓷粉 末、約9wt%的助燒結劑、與約iwt%的Mn〇2外，其餘製程與量測程序均 與實施例2相同。燒結後測量燒結體的密度，並與其理論密度比較，將結 果列於表一，其燒結密度與理論密度之比值可大於9〇〇/0。 【實施例3B】 本實施例除了將陶瓷粉體組合物的成分改為約9〇wt%的原料陶瓷粉 末、約9.5wt%的助燒結劑、與約〇.5wt%的Mg0外，其餘製程與量測程序 均與實施例2相同。燒結後測量燒結體的密度，並與其理論密度比較，將 結果列於表一，其燒結密度與理論密度之比值可大於9〇 %。 【實施例4】 本實施例除了將陶瓷粉體組合物的成分改為約85wt%的原料陶瓷粉 末與約15wt%的助燒結劑外，其餘製程與量測程序均與實施例2相同。燒 結後測量燒結體的密度，並與其理論密度比較，將結果列於表一，其燒結 密度與理論密度之比值可大於90 %。 【實施例5A】 本實施例除了將陶瓷粉體組合物的成分改為約85wt%的原料陶瓷粉 末、約14wt%的助燒結劑、與約lwt%的Μη02外，其餘製程與量測程序 均與實施例2相同。燒結後測量燒結體的密度，並與其理論密度比較，將 0798-A20604TWF(N2);C04035;DWWANG 10 1248095 、’’α果歹j於其貫際雄、度與理論密度之比值可大於9〇%。 【實施例5B】 本貝知例除了將陶究粉體組合物的成分改為約8 5 wt %的原料陶竟粉 末、約14.5wt%的助燒結劑、與約〇 5奶％的Mg〇外，其餘製程與量測程 序均與域2相同。燒結制錢結體的密度，並與其理論密度比較， 將結果列於表―，其燒絲度與理論密叙比值可大於90%。 【實施例6】 本貝知例除了將陶竟粉體組合物的成分改為約8_%的原料陶竞粉 末與約2Gwt% ’其餘製程與量難序均與實施例2 _。燒結後測量燒結 體的讀’並與其理論密度峨，將結果顺表__，其燒結密度與理論密 度之比值可大於90%。 【實施例7A】 本貝施例除了將陶兗粉體組合物的成分改為約8〇wt%的原料陶曼粉 末、約19wt%的助燒結劑、與約lwt%的Mn〇2外，其餘製程與量測程序 麟f施例2相同。燒結後測量燒結體的密度，並與其理論密度比較，將 結果列於表一，其燒結密度與理論密度之比值可大於9〇%。 【實施例7B】 本貫施例除了將陶瓷粉體組合物的成分改為約8〇wt%的原料陶瓷粉 末、約19.5wt%的助燒結劑、與約〇 5wt%的Mg〇外，其餘製程與量測程 序均與實施例2 _。燒結後測量燒·的密度，並與其理論密度比較， 將結果列於表一，其燒結密度與理論密度之比值可大於90%。 〇798>A20604TWF(N2);C04035；DWWANG 11 1248095 【實施例8】 本實施例除了將陶瓷粉體組合物的成分改為約80wt°/〇的原料陶究粉 末、約18.5wt%的助燒結劑、約iwt%的Mn〇2與約〇.5wt%的MgO外，其 餘製程與量測程序均與實施例2相同。燒結後測量燒結體的密度，並與其 理論密度比較，將結果列於表一，其燒結密度與理論密度之比值可大於 90%。
表一、實驗結果 實施例 燒結氣氛 燒結溫度 燒結密度 理論密度 燒結/理論 密度比 °C (gm/cm3) (gm/cm ) (%) 1 氮氫混合 900 5.21 4.42 8 4.7 1 氮氩混合 950 5.21 4.15 7 9.7 1 氮氫混合 1000 5.21 4.54 8 7.1 1 氮氣 950 5.21 4.06 7 7.9 2 氮氫混合 900 5.00 4.22 8 4.3 2 氮氫混合 950 5.00 4.17 8 3.3 2 氮氫混合 1000 5.00 4.57 9 1.4 2 氮氣 950 5.00 4.07 8 1.3 3A 氮氫混合 900 4.98 4.25 8 5.2 3A 氮氫混合 950 4.98 4.64 9 3.2 3A 氮氫混合 1000 4.98 4.79 9 6.1 3A 氮氣 950 4.98 4.52 9 0.7 3B 氮氫混合 900 5.00 4.10 8 1.9 3B 氮氫混合 950 5.00 4.24 8 4.7 3B 氮氫混合 1000 5.00 4.61 92.2 3B 氮氣 950 5.00 4.18 8 3.6 4 氮氫混合 900 4.83 3.99 8 2.5 4 氮氫混合 950 4.83 4.23 8 7.4 4 氮氫混合 1000 4.83 4.73 9 7.8 4 氮氣 950 4.83 4.09 8 4.6 5A 氮氫混合 900 4.82 3.93 8 1.7 5A 氮氫混合 950 4.82 4.55 94.5 5A 氮氫混合 1000 4.82 4.59 9 5.4 5A 氮氣 950 4.82 4.48 9 3.1 5B 氮氫混合 900 4.83 4.01 8 3.0 5B 氮氫混合 950 4.83 4.06 8 4.1 5B 氮氫混合 1000 4.83 4.47 92.4 5B 氮氣 950 4.83 3.96 8 1.8 0798-A20604TWF(N2);C04035;DWWANG 12 1248095 實施例 燒結氣氛 燒結溫度 燒結密度 理論#度 燒結/理論 °c (gm/cm3) (gm/cm3) 密度比 (%) 6 氮氫混合 900 4.69 3.79 8 0.9 6 氮氫混合 950 4.69 4.13 8 8.0 6 氮氫混合 1000 4.69 4.53 9 6.5 6 氮氣 950 4 .T9 4.00 8 5.2 7A 氮風混合 900 4.68 3.6 6 7 8.2 7A 氮氫混合 950 4 .Τδ~~ 4.51 9 6.5 7A 氮氫混合 1000 4.68 4.46 9 5.3 7A 氮氣 950 4.68 卜4 · 44 r 9 5 . 〇 7B 氮氫混合 900 1 1769 3.73 7 9.6 7B 氮氫混合 950 4 769 4.01 8 5.4 7B 氮氫混合 /g AT 1000 4.69 4.69 10 0.0 7B 氣氣 950 47?9^ 3.94 8 3.9 8 氮氫混合 900 476^~~ 3.89 8 2.9 8 氮氫混合 950 4.69 4.32 9 2 1 8 氮氫混合 1000 47όΤ~ 4.58 97.6 8 氣氣 950 4.27 91.1 在上述的實施例中，除了實施例！之外，其他的實施例的成分均滿足 原料陶瓷粉末含量為80〜90 wt%、助燒結劑含量為1〇〜2〇 wt%，可在低溫 (900〜1000 C)完成90%以上的敏密化’故可與其共燒製造内電極為銅的積 層陶瓷電容器。 實施例中的介電成分亦可經由傳統製程如乾壓、冷均壓與熱均壓製成 各種不同形狀與不同用途的陶瓷體。以乾壓為例，陶瓷粉末可與水與黏結 劑如聚乙烯醇(PVA)混合，經喷霧造粒後改進粉體的流動性，再經乾壓、脫 脂與燒結即可製成介電陶瓷成品。第2圖表示實施例5A之積層陶瓷材料且 以銅(Cu)為内電極；以及以傳統貴金屬之陶瓷材料及銀鈀(Agpd)為内電極所 製成的陶瓷電容的等效串聯電阻(ESR)。第3圖表示實施例5A之積層陶瓷 材料且以銅(Cu)為内電極；以及以傳統貴金屬之陶瓷材料及銀鈀(Agpd)為内 電極所製成的陶瓷電容的品質因子(Q)。由第2圖及第3圖之數據可驗證以 13
〇798-A20604TWF(N2);C04035;DWWANG 1248095 銅(Οι)為内電極及實施例5A之積層陶瓷材料所製程之陶究電容，可声得較 小之ESR及較高之品質因子(Q)。此外，上述第2、3圖之規格為 NP0/1005/1.5pF。 雖然本發明已以較佳實施例揭露如上，然其並非用以限定本發明，任 何熟習此技藝者，在不脫離本發明之精神和範圍内，當可作些許之更動與 潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 0798-A20604TWF(N2);C04035;DWWANG 14 l248〇95 【圖式簡單說明】 第1圖為—剖面圖，係顯示本發明一實施例的積層陶瓷電容界。 為〃圖為分別以銅為内電極與實施例5A中之喊材料；以及以銀把 、、内電極與傳統陶瓷材料所製成的陶瓷電容之等效串聯電阻(ESR)。 第3 、 圖為分別以銅内電極與實施例5A中之陶莞材料；以及以銀把為 $極與傳統責金制£材料所製成的陶魏容之品質因子(Q)。 【主要元件符號說明】 1〜陶瓷材料 2〜内電極 3〜外電極 0798-A20604TWF(N2) ;C0403 5 ;DWWANG 15

Claims (1)

1248095 十、申請專利範圍： ^種陶瓷粉體組合物，包含： 原料陶瓷粉末，含量為80〜90 wt%，其組成如下： (SrxCai-x)TlyZri-y〇3，其巾 0纪 1、0求0.1 ;以及 助燒結劑，含量為10〜2〇wt%，係擇自Ma2〇、Mb〇、Me2〇3、 與Μ 〇2之氧化物所組成的族群，其中元素Ma為鋰、鈉、鉀、 =述之、、且σ，兀素Mb為鈹、鎂、鈣、鳃、鋇、或上述之組 70素Μ為删、銘、録、或上述之組合，元素^為石夕、錯、 或上述之組合。 .如申靖專利範圍第！項所述之陶变粉體組合物，更包含 摻雜物’其驗的氧化物、鎖的氧化物、或上述之组合。 旅:中_範圍第2項所敎_地^物二中該 摻雜物的含量為不大於1 wt%。 4.如申請專利範圍第i項所述之料粉體組 值係符合〇分切.05。 y 5·如申請專利範圍第 助燒結劑令，元素Ma為鋰 元素Md為石夕。 1項所述之陶㈣體組合物，其中該 兀素Μ為鋇，元素，為硼或鋁， 6·如申請專利範圍第 助燒結劑令，元素Ma為鐘 鎂、鈣、鳃、鋇其中之一， 元素Μ為梦、錯其中之一 1項所述之陶究粉體組合物，其令該 、鈉、鉀農由+ L 中之一，元素]\^為鈹、 元素Mc為碉、鋁、鎵、其令之二， 0798-A20604TWF(N2)；C04035；DWWANG 16 1248095 項所述之陶瓷粉體組合物，其中該 元素Μ為鋇，元素Me為硼與鋁， 7·如申請專利範圍第6 助燒結劑中，元素Ma為鋰， 元素Md為石夕。 8·如申請專利範圍第1項所沭夕隐义，、ώ 述之陶瓷粉體組合物，其中該 助燒結劑中，Md〇2之含量為50wt〇/r 上而不滿100 wt%、Mc2〇3 之含量為l〇wt%以下、Mb0的会吾炎 π 3里為10〜30wto/〇、Ma2〇的含量 為10wt°/〇以下。 9. 一種陶瓷材料，係由申請專刺銘圖 阳甲明寻利靶圍弟丨項之陶瓷粉體組 合物所燒結而成，其燒結溫度為9〇〇〜1〇〇〇亡。 如申請專利範圍第9項所述之陶莞材料，其燒結氣氛為 氫、氮混合之還原氣氛。 如申請專利範圍第9項所述之陶£材料，其燒結密度與 理論密度之比值不小於9〇%、不大於ι〇〇%。 12·—種積層陶瓷電容器，包含·· 一陶瓷介電質，係由包含下列組成之陶瓷粉體組合物燒結 而成： 原料陶瓷粉末，含量為80〜9〇 wt%，其組成如下·· (SrxCa〗-x)TiyZrNy〇3，其中 、〇syu ;及 助燒結劑，含量為10〜2〇wt%，係擇自Ma20、Mb〇、Me2〇3、 與Md〇2之氧化物所組成的族群，其中元素Ma為鋰、鈉、鉀、 或上述之組合，元素Mb為鈹、鎂、鈣、鋇、鋇、或上述之組 17 0798-A20604TWF(N2)；C04035；DWWANG !248095 元素Md為矽、鍺 合’元素，為硼、紹、嫁、或上述之組合 或上述之組合； 複數個内電極， 至少一對外電極 些内電極。 大體 上平行延伸於該 陶瓷介電質内；以及 ’曝露於該陶瓷介雷晳k J艽〗丨電貝外，並電性連接該 韻2如巾睛專利範圍第12項所述之積層_電容器，1中 。…遗組合物更包含—摻雜物，其為 化物、或上述之組合。 _的氧 ⑷如申請專利範圍第12項所述之積層陶莞電容器， 該摻雜物的含量為不大於1 Wt%。 /、 15·如申請專利範圍第12項所述之積層陶£電容器，其中 y值係付合〇$y2〇.〇5。 16·如申請專利範圍第12項所述之積層陶瓷電容器，其中 «亥助燒結劑中，元素Ma為鐘，元素Mb為鋇，元素,為蝴或 鋁，元素Md為矽。 17.如申請專利範圍第12項所述之積層陶瓷電容器，其中 。亥助燒結劑中，元素Ma為鋰、鈉、鉀其中之一，元素為鈹、 鎂、鈣、鳃、鋇其中之一，元素Mc為硼、鋁、鎵、其中之二， 元素…為矽、鍺其中之一。 18_如申請專利範圍第17項所述之積層陶瓷電容器，其中 該助燒結劑中，元素Ma為鋰，元素Mb為鋇，元素Me為硼與 18 0798-A20604TWF(N2);C04035;DWWANG 1248095 S，元素Md為矽。 診Μ·如申請專利範圍第12項所述之積層陶究電容器 中’⑽2之含量為50wt%以上而不滿1〇〇 2〇3之含量為10wt%以下、Mb〇的含量為n以 、含里為l〇wt%以下。 ^ 2〇·如申請專利範圍第12項所述之積層陶瓷電容器 勺竟介電質的燒結溫度為900〜100CTC。 21·如申請專利範圍第12項所述之積層陶瓷電容器 4陶瓷介電質的燒結氣氛為氫、氮混合之還原氣氛。 2 _如申明專利範圍第12項所述之積層陶莞電容器 忒陶瓷介電質的燒結密度與理論密度之比值不小於9〇〇/0 於 100〇/〇。 23.如申請專利範圍第12項所述之積層陶瓷電容器 該内電極為銅。 ，其中 wt%、 、Ma20 ，其中 ，其中 ，其中 、不大 ，其中 0798-A20604TWF(N2);C04035;DWWANG 19
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