1247876 A7 B7 五、發明説明（1) 發明領域以及背景 (請先閲讀背面之注意事項再填寫本頁) 本發明係相關於一種檢視方法，作爲對於二維週期結構 (像是晶圓晶粒（die)或光罩等）之二維週期結構以偵測 其不規則（此後稱爲瑕疵）。本發明允許以即時之方式，以 允許對於此些週期結構之序列檢視，其包括對於二維結構之 緣端處，之週期檢查，而不損失產能。 像是半導體晶圓晶粒、記憶體晶格、以及光罩之週期結 構，於製造時需要檢視，以偵測所出現之瑕疵，而減少製造 成本。此檢視無法直接以手動之方式而執行，因爲手動檢視 將太繁重，而將需要許多小時的人工作業。相反的，檢視係 藉由將含有此結構之物件相對於光系統而移動以檢視該物件 之至少一部份，而自動執行。爲了淸楚起見，習知係將系統 模組化爲有限寬度之照相機，而得到物件部份之序列影像， 而以習知稱爲”掃瞄”之程序而執行，直到整個標的區域被掃 瞄。 經濟部智慧財產局員工消費合作社印製 每個由照相機之閃擊所掃瞄之物件之區域，係稱爲”長 列（swath) ”。對於晶圓晶粒包括晶圓之只有單一週期（單 一晶粒）之長列，係定義爲”晶粒長列”。一覆蓋晶圓上所有 晶粒之晶粒相同部份之長列，係定義爲”虛擬長列”。一虛擬 長列，係指數個晶粒長列之影像，最好係指晶圓上之所有晶 粒長列，而連接成取自晶圓之每個晶粒實質相同部份之長列 晶粒長條影像。 該三長列類型之例子，係以圖1 A爲背景。晶圓1 〇係 指多數個晶粒1 2，其組成列1 4。每個晶粒1 2係具有在 -4- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 1247876 A7 B7 五、發明説明（2) (請先閱讀背面之注意事項再填寫本頁} 所有晶粒1 2實質相同位置之晶粒長列1 6。每個列1 4之 一組晶粒長列1 6係爲長列1 8。所有長列1 8組合成虛擬 長列。 一種傳統之偵測程序，係根據對於得自數個週期之對應 信號之分析。該瑕疵之偵測，係根據統計方法，意指，瑕疵 存在於相鄰晶粒之相同位置之機率，係非常的低。因此，偵 測係根據經由使用圖1 B所示之三維壓縮方法所具有之不規 則性。 圖1 B，係展示將五個標記爲” A ”，” B ”，” C ”，” D ”以 及” D ”之晶粒之五個晶粒長列2 2之長列2 0。該每對相鄰 晶粒長列2 2之影像之強度差異，係與一起始値（ threshold vaule)相比較，該比較之輸出係爲一比較信號 2 6。當強度差異超過該起始値時，比較信號2 6係爲顯著 。因此，必須設定適當之起始値，使得該系統夠靈敏以偵測 一低的對照瑕疵，且夠堅固以忽略高的對照瑕疵。因此，起 始値應代表圖素雜訊之緊的估算値。 在圖1 B中，比較信號2 6係標記爲A B，B C， 經濟部智慧財產局員工消費合作社印製 C D以及D E。每個比較信號2 6係爲標記在每對相鄰晶粒 長列2 2所得之信號之間的顯著差異之位置不規則之影像。 已提出對於過濾信號以及決定一晶粒不同信號表示晶粒之潛 在瑕疵之各種演算法。每個演算法之例子，係揭示於美國專 利號第5，537，669號之演算法。 一瑕疵影像2 8，係爲由一對相鄰比較信號2 6所執行 之瑕疵辨識程.序之結果。一瑕疵辨識程序，係標示在固定晶 -5- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 1247876 A7 _ B7 五、發明説明（3) 粒之瑕疵，假如不規則與相鄰晶粒比較，係出現在相同位置 時.。 (請先閲讀背面之注意事項再填寫本頁} 因爲瑕疵係預期統計上係爲任意分佈以及爲相當不常發 生，而瑕疵在統計上係不出現在兩個或三個晶圓晶粒之相同 位置上。因此，藉由執行相鄰晶粒之比較信號之間的瑕疵辨 識程序，可偵測是否出現瑕疵2 5 (如果有的話），而可減 少任意雜訊之偵測。 名稱”任意雜訊”，係指在強度比較程序中之雜訊。此比 較一般係爲增加的變動，因此，具有強度比較將超過起始値 之可能性，而在當沒有瑕疵時產生任意的雜訊2 4。在傳統 起始値中，此種情形在比較時之機率係很小，且對於相同圖 素之此情形之機率係幾乎爲0。因此，瑕疵辨識操作將減少 此種情形發生之機率至0或幾乎爲0的水準。 在標記爲”B ”之瑕疵，對於標記爲”A ”與”B ”以及”B ”與 ” C ”之間的晶粒長列2 2之間，將產生一顯著的比較信號 2 6，使得瑕疵辨識操作在瑕疵位置上係爲真。 經濟部智慧財產局員工消費合作社印製 此方法之優點在於因爲瑕疵對於兩相鄰晶粒長列2 2將 產生顯著的比較信號2 6，而導致許多雜訊之取消。此外， 此程序特別適合於即時影像處理系統，因爲需要影像獲取（ acquisition)以及處理之步驟，係界定的很好，而可重複執 行。該步驟係爲以下。首先，晶粒” A ”之晶粒長列影像或”晶 粒長列A ”，被取得，並儲存在系統記憶體中。接著，晶粒” B ”之晶粒長列影像或”晶粒長列B ”被取得並儲存。每個影像 係以多數個框而被取得，其係在單一晶粒長列中之單位而被 -6 - 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 經濟部智慧財產局員工消費合作社印製 1247876 A7 · ______ B7_ 五、發明説明（4) 處理。晶粒長列B之每個進入框，係排列爲對應於晶粒長列 A之框以利比較，使得到相當可靠之比較。 由於晶粒長列B之所有影像已被得到，而產生一比較信 號稱爲” A B ”。接著，晶粒長列C之影像被得到，而產生比 較影像B C。執行在影像A B以及B C之間的瑕疵辨識操作 ’係允許偵測出在晶粒B中之瑕疵被發現。不幸的是，此方 法對於偵測像是晶粒A以及E之端緣晶粒係無效的。例如， 在晶粒A之瑕疵可爲A B以及B C之間的瑕疵辨識操作而被 偵測。此瑕疵在A B中將產生一顯著的比較信號，而B C之 對應部份將不會有此不規則。因此，對於端緣晶粒（像是晶 粒A )之瑕疵辨識操作，只被執行一次，而係敏感於高對照 雜訊之出現，因此將有不良的結果。 因此，對於端緣晶粒之檢視具有兩項困難處。手線，此 種偵測需要額外之處理步驟，例如，以執行額外之瑕疵辨識 操作，其係不包括在對晶圓剩餘部份之傳統處理路徑，而減 少系統之產能。此外，此操作，因爲任意雜訊之出現，而產 生瑕疵偵測時之一顯著數目之假的確認（positive )結果。 對於端緣晶粒之瑕疵偵測之此些問題，係習見於習知技 藝中，而有數個當代已知但不盡完美之解決方式。第一個解 決方式，係在檢視步驟中簡單的忽略所有之端緣晶粒，而定 義所有之此些晶粒係爲不適用。此解決方式係相當有其缺點 ，因爲刪除所有端緣晶粒將缺乏效能並花費巨大。第二個解 決方式係在增加該比較起始値，使得該顯著的差異對於端緣 晶粒需要較大。此解決方式免除了任意雜訊，但亦減少該偵 本紙張又度適用中國國家襟準（CNS ) A4規格（210X297公釐） -7 - (請先閱讀背面之注意事項再填寫本頁)1247876 A7 B7 V. INSTRUCTIONS (1) Field of the invention and background (please read the note on the back and then fill out this page) The present invention relates to a viewing method for a two-dimensional periodic structure (such as a wafer die ( A two-dimensional periodic structure of a die or a reticle to detect its irregularity (hereinafter referred to as 瑕疵). The present invention allows for a sequential view of such periodic structures, including periodic inspections at the edge of the two-dimensional structure, without loss of throughput, in an instant manner. For example, the semiconductor wafer die, the memory cell, and the periodic structure of the reticle need to be inspected during manufacturing to detect the flaws that occur and reduce manufacturing costs. This view cannot be performed directly in a manual manner, as manual viewing will be too onerous and will require many hours of manual work. Conversely, the inspection is performed automatically by moving the article containing the structure relative to the light system to view at least a portion of the object. For the sake of clarity, the conventional system modularizes the system into a camera of limited width, and obtains a sequence image of the object part, which is executed by a program known as "scanning" until the entire target area is swept. aim. Printed by the Intellectual Property Office of the Ministry of Economic Affairs, the Consumer Cooperatives. The area of each object scanned by the camera's flash is called the “swath”. For a long column of wafer dies including wafers with a single period (single grain), it is defined as a "grain long column". A long column that covers the same portion of the grains of all grains on the wafer is defined as a "virtual long column." A virtual long column, which is an image of an index of grain lengths, preferably refers to all of the grain lengths on the wafer, and is connected to long rows of grains from substantially the same portion of each grain of the wafer. Long image. An example of the three-column type is in the context of Figure 1A. Wafer 1 refers to a plurality of crystal grains 12, which constitute a column 14. Each die 1 2 has a Chinese National Standard (CNS) A4 specification (210X297 mm) at the -4- paper scale. 1247876 A7 B7 V. Invention Description (2) (Please read the notes on the back and fill in the form) Pages All of the grains 1 2 are substantially the same position of the grain length column 16. Each of the columns 1 4 is a group of grain length columns 16 is a long column of 18. All of the long columns 1 8 are combined into a virtual long column. A conventional detection procedure is based on the analysis of corresponding signals obtained from several cycles. The detection of the flaws is based on statistical methods, meaning that the probability of being present in the same position of adjacent grains is very Therefore, the detection is based on the irregularity of the three-dimensional compression method shown in Fig. 1B. Fig. 1B shows that five are marked as "A", "B", "C", The lengths of the five grains of the "D" and "D" grains are 2 2 long columns. The intensity difference of the image of each pair of adjacent grain lengths 2 2 is related to a starting va In comparison, the output of the comparison is a comparison signal 26. When the intensity difference exceeds the starting threshold The comparison signal 26 is significant. Therefore, the appropriate starting enthalpy must be set so that the system is sensitive enough to detect a low control enthalpy and is strong enough to ignore the high control 瑕疵. Therefore, the initial 値 represents the graph The estimation of the noise is very tight. In Figure 1 B, the comparison signal 26 is marked as AB, BC, and the Ministry of Economic Affairs Intellectual Property Office employee consumption cooperative prints CD and DE. Each comparison signal is marked with An irregular image of the significant difference between the signals obtained by each pair of adjacent grain lengths 2 2 . Various algorithms have been proposed for filtering signals and determining the potential defects of a grain different signal representing the grain. An example of an algorithm is disclosed in U.S. Patent No. 5,537,669. The image 2 8 is the result of the identification process performed by a pair of adjacent comparison signals 26. The identification procedure is marked on the fixed crystal-5- paper scale applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 1247876 A7 _ B7 V. Invention description (3) Grain 瑕疵, if irregular and phase Adjacent crystal Comparison, when appearing in the same position. (Please read the note on the back and then fill out this page) Because the expected statistics are arbitrary and are quite infrequent, and the statistics do not appear in the two The same position of one or three wafer dies. Therefore, by performing a 瑕疵 recognition procedure between the comparison signals of adjacent dies, it is possible to detect whether 瑕疵25 (if any) is present, but can be reduced The detection of any noise. The name "arbitrary noise" refers to the noise in the intensity comparison procedure. This comparison is generally an increase in the variation, therefore, the intensity comparison will exceed the probability of the initial flaw, and Generate any noise when there is no 2 2 4 . In the traditional starting point, the probability of this situation is small in comparison, and the probability of this situation for the same picture is almost zero. Therefore, the 瑕疵 identification operation will reduce the probability of occurrence of this situation to a level of 0 or almost zero. Between the marks "B", a significant comparison signal 2 6 is generated between the grain length columns 2 2 labeled "A" and "B" and between "B" and "C".瑕疵 The identification operation is true at the 瑕疵 position. Printed by the Ministry of Economic Affairs, the Intellectual Property Office, and the Consumer Cooperatives. The advantage of this method is that many of the noises are cancelled because the two adjacent grain lengths 2 2 will produce a significant comparison signal 2 6 . In addition, this procedure is particularly well-suited for use in real-time image processing systems because the steps required for image acquisition and processing are well defined and can be repeated. This step is as follows. First, the grain long column image or "grain row A" of the grain "A" is taken and stored in the system memory. Next, the grain long column image or "grain long column B" of the grain "B" is taken and stored. Each image is obtained in a number of frames, which are in units of a single grain long column and are applied to the Chinese National Standard (CNS) A4 specification (210X297 mm) by the -6 - paper scale. Ministry of Economic Affairs Intellectual Property Bureau Employee Consumption Cooperative Printed 1247876 A7 · ___ B7_ V. Invention Description (4) Processing. Each of the grain length columns B enters the frame and is arranged to correspond to the frame of the grain length column A for comparison, so that a fairly reliable comparison is made. Since all images of the grain long column B have been obtained, a comparison signal is generated as "A B ". Next, an image of the grain length C is obtained, resulting in a comparison image B C . Performing the 瑕疵 identification operation between images A B and B C allows detection of defects in the grain B to be detected. Unfortunately, this method is ineffective for detecting edge grain patterns such as grains A and E. For example, after the die A can be detected for the 瑕疵 identification operation between A B and B C . This 将 will produce a significant comparison signal in A B , and the corresponding part of B C will not have this irregularity. Therefore, the identification operation for the edge grain (like grain A) is performed only once, and is sensitive to the occurrence of high control noise, so there will be undesirable results. Therefore, there are two difficulties in the inspection of the edge edge grains. Hand lines, such detection requires additional processing steps, for example, to perform additional identification operations that do not include traditional processing paths to the rest of the wafer, reducing system throughput. In addition, this operation, because of the occurrence of any noise, produces a significant number of false positive results at the time of detection. These problems are known in the art of detecting the edge of the edge grain, and there are several solutions that are known in the art but are not perfect. The first solution is to simply ignore all edge grain in the inspection step, and it is not applicable to define all of these die. This solution is quite disadvantageous because removing all edge-edge dies would be inefficient and costly. The second solution is to increase the start of the comparison so that the significant difference is greater for the edge grain. This solution eliminates any noise, but it also reduces the use of the Chinese paper (CNS) A4 specification (210X297 mm) -7 - (Please read the back note and fill out this page)
1247876 A7 ， __B7_ _ 五、發明説明（5) (請先閲讀背面之注意事項再填寫本頁) 測靈敏度。該第三個解決方式在藉由使用額外後處理相位而 確認端緣晶粒之瑕疵之出現，其中端緣晶粒係與以兩個晶粒 分離於端緣晶粒之晶粒之第二比較而檢查。此方法之缺點， 需要額外之時間處理。 而另一解決方式，係在比較或自晶圓晶粒之二長列之影 像信號，如圖1 C所示。對於此解決方式，需要晶圓晶粒 1 4之至少二列。比較係在自每列1 4之第一晶粒1 2 (兩 個皆爲端緣晶粒1 2 )之影像所得之信號間而執行，而有效 的比較二”相鄰”的每個端緣晶粒1 2。然而，比較信號在端 • 緣上係方位相反，使得影像中之一個之方位在執行比較之前 需要反向。此方法之一缺點在於，來自於相鄰長列1 6之影 像係以相對於照相機之晶圓方位而反向，通常在比較信號中 會加入一人工變異。此雜訊來源，造成偵測精密度之變差， 而避免瑕疵偵測之假確認結果。因此，一較佳之解決方式， 係在比較以相同影像方位而得到兩個或更多個之信號。不幸 的是，並無此解決方式。 經濟部智慧財產局員工消費合作社印製 因此，需要一種對於像是半導體晶粒之晶圓中週期結構 ，在最大偵測靈敏度以及產能下而即時檢視端緣晶粒之偵測 瑕疵方法。 發明之簡要敘述 本發明係一種將同步得自晶圓淨利之偶數個虛擬長列之 影像信號，而對於像是晶圓晶粒之比較週期結構之方法。對 於晶圓晶粒之信號之後係與來自於另二個晶粒之至少該等信 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -8 - 1247876 A7 B7 五、發明説明（6) (請先閲讀背面之注意事項再填寫本頁) 號而比較。最好，此而晶粒係位於係與該晶粒相同列而設置 在該晶粒之任一側邊。然而，對於端緣晶粒，至少一相鄰晶 粒係以另一列而設置，最好係長列之相對側以及相鄰列。 本發明之方法中，影像係從像是兩個或更多長列之偶數 個長列，在影像自第晶粒之第二列之等效長列處而得到之前 ，而得到以及處理。該照相機（以及該所得影像），係經正 確定向以得到來自於晶粒之第二列之等效長列之高品質信號 。此方法允許對於來自於晶粒之第一列以及晶粒之第二列之 長列（包括端緣晶粒）之信號的正確比較。 此後，名稱”長列”係指照相機以單一閃擊而掃過物件之 物件的每個區域。之後名稱”週期結構”係包括但不非限制於 半導體晶圓晶粒、記憶體晶格以及光罩等。名稱”晶圓晶粒” 以及”半導體晶圓晶粒”係指製造半導體晶片時將之分割成晶 粒之晶圓，使得每個晶粒變成像是記憶體晶片或半導體晶片 之個別晶片。自每個晶粒所製造之晶片類型係不相關於本發 明之方法。 經濟部智慧財產局員工消費合作社印製 圖形之簡要敘述 上述以及其他目的、觀點以及優點，在由以下圖式、較 佳實施例之說明的詳細描述後將變得更加淸楚，其中： 圖1 A - 1 C係指晶圓晶粒之瑕疵檢視之背景技術； 圖2係一結構圖，展示以本發明方法所檢查之多數個晶 圓晶粒之例子；以及 圖3係本發明之方法的流程圖。 -9 - 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 1247876 A7 B7 五、發明说明（7) 主要元件對照表 3 0 晶圓 3 2 晶粒 3 4 列 3 6 列 3 8 列 4 0 虛擬長列 4 2 第一長列 4 4 第二長列 4 6 第一長列 4 8 第二長列 5 0 第一長列 5 2 第二長列 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 較佳時實施例之詳細描述 本發明係爲一種藉由將得自於晶圓晶粒之偶數個虛擬長 列之影像信號，以即時之方式而予以比較像是晶圓晶粒之週 期結構的方法。對於晶圓晶粒之每個晶粒長列之信號之後與 另二個晶粒之至少該等信號相比較。最好是，此二相鄰晶粒 ，係與該晶粒相同列，而設置於此晶粒之任一側。然而，對 於端緣晶粒，至少一相鄰晶粒最好係設置於另一列，最好係 在相鄰列。 根據本發明之方法，在等效影像取自晶粒之第二列之相 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -10 - 1247876 A7 , B7 五、發明説明（8) (請先閎讀背面之注意事項再填寫本頁) 同數目之長列之前，影像係自晶粒之第一列之偶數個長列而 得，使得第二列之晶粒之長列係與第一列之對應長列相同之 方位。該介於相同方位之晶粒影像之間的排列，允許將來自 於晶粒之第一列之長列之信號，與晶粒之第二列之長列之信 號，得到一更靈敏的比較。 本發明之方法具有較習知技藝爲佳之許多優點。首先， 本發明之方法允許端緣晶粒被檢視，而不像習知方法其係簡 單的在檢視程序中將端緣晶粒忽略，而使該等端緣晶粒被丟 棄。淸楚的，將端緣晶粒丟棄係浪費以及缺乏效能。 第二，本發明之方法，係允許得自端緣晶粒之影像信號 之比較，該晶粒並經正確定向。因此，不需要使用反向極以 及照相極性（其該導致相關於受偵測信號之雜訊的產生）於 晶粒長列之間的比較。 經濟部智慧財產局員工消費合作社印製 第三，本發明之方法支援對於超過三個晶粒之多重晶粒 比較。因爲一虛擬長列係根據本發明方法之實施例而掃瞄， 相同之晶粒長列係在整個晶圓上掃瞄。因此，每個虛擬長列 係包含爲數眾多之週期，其將允許較大的整體晶粒之更進一 步的統計分析，以決定起始値。 在以下本發明之例子中，該週期係假設爲在單一晶粒， 而影像係假設得自晶粒之一晶圓，應知其僅爲解釋用，而並 非限制於此。 本發明之檢視端緣晶粒，或在掃瞄軸上缺少至少一相鄰 晶粒之週期結構之任何另一週期之操作原理，可在參考以下 附圖以及解釋而更加淸楚，應知對於該等附圖係作爲解釋用 -11 - 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 1247876 A 7 ， ___ B7_ 五、發明説明（9) 而非限制於此。 (請先閲讀背面之注意事項再填寫本頁) 參考附圖，圖2係本發明方法之受檢查知多數個晶圓晶 粒之結構方塊圖。 圖2係展示晶圓3 0之部分，包含多數個晶粒3 2。晶 粒3 2係由二列3 4所組成，每個列3 4包含六個晶粒3 2 。應注意，晶粒3 2以及列3 4之數目僅爲解釋用而非限制 於此。因爲每個列3 4需要包含至少一晶粒3 2。晶圓3 0 應包含至少二列3 4，該列包含第一列3 6以及第二列3 8 〇 經濟部智慧財產局員工消費合作社印製 二虛擬長列4 0之路徑，係如圖2箭頭所示，而爲第一 長列4 2 (標記爲”長列I D # 1 ”）以及第二長列4 4 (標 記爲”長列I D # 2 )。每個虛擬長列4 0係爲藉由將照相 機極（stage)之單一掃瞄閃擊於整個晶圓3 0之上而得之影 像。每個虛擬長列4 0包括每個晶粒3 2之寬度，使得至少 二個此長列4 0係經得到而覆蓋每個晶粒3 2之寬度。第一 虛擬長列4 2之方位，係相反於第二虛擬長列4 4之方位， 如箭頭所示之方向。該照相機（未顯示）係掃瞄第一列3 6 之第一長列4 6，而作爲第一虛擬長列4 2之部分，而之後 掃瞄第二列3 6之第二長列3 8，而作爲第二虛擬長列4 4 之部分。因此，兩個第一長列4 6以及第二長列4 8，係對 於第一列而掃瞄。 接著，第一長列5 0以及第二長列5 2，係對於第二列 而掃瞄，而分別作爲第一虛擬長列5 2以及第二虛擬長列 4 4之部分。第一列3 6之第一長列4 6以及第二列3 8之 -12- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 1247876 A7 B7 五、發明説明（叫 第一長列5 0之影像定向，因此係實質相同。類似的，第一 列3 6之第二長列4 8以及第二列3 8之第二長列5 2之影 像定向，因此係實質相同。 第一列3 6以及第二列3 8之兩個端緣晶粒5 4 (行標 記爲” A ”以及” F ”）在相同列中只具有單一的相鄰。 圖3展示本發明之檢視晶粒晶圓瑕疵之方法的流程圖， 該晶圓具有至少晶粒之第一列以及晶粒之第二列。對於晶粒 之第一以及第二列兩者，具有兩個端緣晶粒。該方法的步驟 如下。 在步驟1，照相機得到晶圓晶粒之第一列之第一長列影 像。該第一長列之寬度係小於晶粒之寬度，使得至少需要二 長列，以覆蓋晶粒之整個寬度。在步驟2中，在掃瞄長列處 理結束，而檢視到瑕疵出現時，該系統儲存在長列中最後晶 粒之標記爲” F ”之影像以及標記爲” E F ”之比較影像（在第 一列之行F之晶粒）。 在步驟3中，照相機得到晶圓晶粒之第一列之第二長列 之影像。第一長列之定向係相反於第二長列之定向。在步驟 4中，在結束掃瞄長列之處理時，系統儲存在長列中最後晶 粒之標記爲” A ”之影像以及標記爲” B A ”之比較影像（在第 一列之行F之晶粒）。 在步驟5中，照相機得到晶圓晶粒之第二列之第一長列 之影像。第一列之第一長列之影像之定向係實質相同於第二 列之第一長列之影像定向。在步驟6中，該長列係爲第一長 列之繼續，而檢視是否出現瑕疵，使得第一列之第一長列以 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 -13- 1247876 A7 B71247876 A7 , __B7_ _ V. Description of invention (5) (Please read the notes on the back and fill out this page). This third solution confirms the occurrence of defects in the edge grain by using an additional post-processing phase, wherein the edge die is compared to the second die separated by two grains at the edge die. And check. The shortcomings of this method require additional time processing. Another solution is to compare or image the image signals from the long rows of wafer dies, as shown in Figure 1C. For this solution, at least two columns of wafer grains 14 are required. The comparison is performed between the signals obtained from the image of the first die 1 2 of each column (both of which are end edge grains 1 2 ), and effectively compares each edge of the two adjacent Grain 1 2 . However, the comparison signal is oriented at the opposite edge so that the orientation of one of the images needs to be reversed before performing the comparison. One disadvantage of this method is that the image from adjacent long columns 16 is reversed relative to the wafer orientation of the camera, typically incorporating a manual variation in the comparison signal. This source of noise causes the detection precision to deteriorate, and avoids the false confirmation result of the detection. Therefore, a preferred solution is to obtain two or more signals in the same image orientation. Unfortunately, there is no such solution. Printed by the Ministry of Economic Affairs, the Intellectual Property Office, and the Consumer Cooperatives. Therefore, there is a need for a method for detecting the edge edge of a wafer, such as a periodic structure in a wafer, such as a semiconductor die, at the maximum detection sensitivity and throughput. BRIEF DESCRIPTION OF THE INVENTION The present invention is a method of synchronizing image signals of even number of virtual long columns derived from wafer net profit for a comparative periodic structure such as wafer dies. The signal for the wafer die is followed by at least the letter from the other two grains. The Chinese National Standard (CNS) A4 specification (210X297 mm) -8 - 1247876 A7 B7 is applied. 6) (Please read the note on the back and fill out this page) to compare. Preferably, the die is located in the same column as the die and is disposed on either side of the die. However, for edge grain, at least one adjacent grain is disposed in another column, preferably on the opposite side of the long column and adjacent columns. In the method of the present invention, the image is obtained and processed from an even number of long columns of two or more long columns before the image is obtained from the equivalent long column of the second column of the second die. The camera (and the resulting image) is a high quality signal that is positively oriented to obtain an equivalent long column from the second column of the die. This method allows for a correct comparison of the signals from the first column of the die and the long columns of the second column of the die, including the edge die. Thereafter, the name "long column" refers to each area of the object that the camera swept through the object with a single flash. The name "periodic structure" then includes, but is not limited to, semiconductor wafer dies, memory cells, reticle, and the like. The designation "wafer die" and "semiconductor wafer die" refer to a wafer that is divided into crystal grains when a semiconductor wafer is fabricated, such that each grain is imaged as an individual wafer of a memory wafer or a semiconductor wafer. The type of wafer fabricated from each die is not related to the method of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, aspects and advantages of the present invention will become more apparent from the following description of the preferred embodiments. A - 1 C is a background art view of a wafer die; FIG. 2 is a block diagram showing an example of a plurality of wafer dies examined by the method of the present invention; and FIG. 3 is a method of the present invention. flow chart. -9 - This paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) 1247876 A7 B7 V. Invention description (7) Main component comparison table 3 0 Wafer 3 2 Grain 3 4 column 3 6 column 3 8 Column 4 0 virtual long column 4 2 first long column 4 4 second long column 4 6 first long column 4 8 second long column 5 0 first long column 5 2 second long column (please read the back note first) Re-fill this page. Detailed Description of the Embodiments of the Ministry of Economic Affairs, Intellectual Property Office, Staff and Consumer Cooperatives. The present invention is an instant image signal obtained by even-numbered virtual long columns from wafer dies. The way to compare the periodic structure of the wafer die is compared. The signal for each of the grain lengths of the wafer grains is then compared to at least the signals of the other two grains. Preferably, the two adjacent crystal grains are in the same column as the crystal grains and are disposed on either side of the crystal grains. However, for the edge grain, at least one adjacent grain is preferably disposed in another column, preferably in an adjacent column. According to the method of the present invention, the equivalent image is taken from the second column of the grain of the grain. The Chinese National Standard (CNS) A4 specification (210×297 mm) -10 - 1247876 A7, B7 5. Inventive Description (8) (Please read the note on the back and fill out this page.) Before the same number of columns, the image is obtained from the even number of long columns in the first column of the grain, so that the long columns of the second column are The first column corresponds to the same orientation as the long column. The arrangement between the grain images of the same orientation allows a more sensitive comparison of the signals from the long columns of the first column of the die to the long columns of the second column of the die. The method of the present invention has many advantages over the prior art. First, the method of the present invention allows edge grain dies to be viewed, rather than simply ignoring the edge grain in the inspection process as is conventional, leaving the edge grain die. Awkwardly, discarding the edge-edge crystal grains is wasteful and inefficient. Second, the method of the present invention allows for comparison of image signals from edge dies that are properly oriented. Therefore, there is no need to use a reverse polarity and a comparison of the photographic polarity (which results in the generation of noise associated with the detected signal) between the long columns of grains. Printed by the Ministry of Economic Affairs, Intellectual Property Office, Staff Consumer Cooperatives Third, the method of the present invention supports multiple grain comparisons for more than three grains. Since a virtual long column is scanned in accordance with an embodiment of the method of the present invention, the same grain length is scanned across the wafer. Thus, each virtual long column contains a number of cycles that will allow for a further statistical analysis of the larger overall die to determine the starting enthalpy. In the following examples of the present invention, the period is assumed to be in a single crystal grain, and the image is assumed to be derived from one of the crystal grains, and it should be understood that it is for illustrative purposes only and is not limited thereto. The operation principle of the viewing edge dies of the present invention, or any other period of the periodic structure lacking at least one adjacent dies on the scanning axis, can be further clarified with reference to the following figures and explanations. These drawings are used as an explanation for the -11 - this paper scale applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) 1247876 A 7 , ___ B7_ 5, invention description (9) and not limited thereto. (Please read the precautions on the back and then fill out this page.) Referring to the drawings, Fig. 2 is a block diagram showing the structure of a plurality of wafer granules inspected by the method of the present invention. 2 shows a portion of wafer 30 that includes a plurality of dies 32. The crystallites 3 2 are composed of two columns 3 4 , and each column 34 contains six crystal grains 3 2 . It should be noted that the number of dies 3 2 and columns 344 is for illustrative purposes only and is not intended to be limiting. Because each column 34 needs to contain at least one die 3 2 . Wafer 3 0 should contain at least two columns 3 4, the column contains the first column 3 6 and the second column 3 8 〇 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed two virtual long column 40 path, as shown in Figure 2 The arrow is shown as the first long column 4 2 (labeled as "long column ID # 1 ") and the second long column 4 4 (labeled as "long column ID # 2 ). Each virtual long column 4 0 is An image obtained by flashing a single scan of the camera over the entire wafer 30. Each virtual long column 40 includes the width of each die 3 2 such that at least two of the long columns 40 0 is obtained to cover the width of each of the crystal grains 3 2 . The orientation of the first virtual long column 4 2 is opposite to the orientation of the second virtual long column 4 4 , as indicated by the arrow. The camera (not Displaying the first long column 4 6 of the first column 3 6 as part of the first virtual long column 4 2 and then scanning the second long column 3 8 of the second column 36 as the first The portion of the second virtual long column 4 4. Therefore, the two first long columns 4 6 and the second long column 4 8 are scanned for the first column. Next, the first long column 5 0 and the second long column 5 2 Scanning for the second column, respectively, as part of the first virtual long column 5 2 and the second virtual long column 44. The first long column 4 6 of the first column 36 and the second column 38 - 12- This paper scale applies to China National Standard (CNS) A4 specification (210X297 mm) 1247876 A7 B7 V. Invention description (called the first long column 50 image orientation, so the essence is the same. Similarly, the first column 3 The image of the second long column 4 8 of 6 and the second long column 5 2 of the second column 38 is oriented substantially the same. The two end edge grains 5 of the first column 3 6 and the second column 38 (The rows labeled "A" and "F") have only a single adjacent in the same column. Figure 3 shows a flow chart of a method of viewing a die wafer wafer of the present invention having at least a die A column and a second column of dies. For both the first and second columns of the die, there are two edge dies. The steps of the method are as follows. In step 1, the camera obtains the first of the wafer dies. The first long column image of the column. The width of the first long column is smaller than the width of the crystal grain, so that at least two long columns are required to Covering the entire width of the die. In step 2, at the end of the scan long column process, and when the 瑕疵 appears, the system stores the image of the last die labeled "F" in the long column and is labeled "EF" "Comparative image (the grain of F in the first column). In step 3, the camera obtains an image of the second long column of the first column of wafer dies. The orientation of the first long column is opposite to The orientation of the two long columns. In step 4, when the process of scanning the long columns is finished, the system stores the image marked "A" in the last die in the long column and the comparison image labeled "BA" (in the first A row of F grains). In step 5, the camera obtains an image of the first long column of the second column of wafer dies. The orientation of the image of the first long column of the first column is substantially the same as the image orientation of the first long column of the second column. In step 6, the long column is the continuation of the first long column, and the presence or absence of defects is checked, so that the first long column of the first column is applicable to the Chinese National Standard (CNS) A4 specification (210×297 mm) on the paper scale. (Please read the notes on the back and fill out this page.) Ordered by the Ministry of Economic Affairs, Intellectual Property Bureau, Staff Consumer Cooperatives, Printing - 13- 1247876 A7 B7
五、發明説明（1D (請先閱讀背面之注意事項再填寫本頁) 及第二列之第一長列，經組合成相同之虛擬長列。爲了檢視 程序之繼續，最好瑕疵辨識操作，係藉由比較影像” F A ”（ 比較晶粒F以及A )以及經儲存之比較影像” E F ”而執行， 以偵測在第一列之端緣晶粒” F ”。在步驟7中，在結束掃瞄 長列之處理時，系統重複儲存最後晶粒影像之處理，使得影 像可接續執行列之處理。 在步驟8中，照相機得到晶圓晶粒之第二列之第二長列 之影像。第一列之第二長列之影像之定向係實質相同於第二 列之第二長列之影像定向。在步驟9中，該長列係爲第一長 列之繼續，而檢視是否出現瑕疵，使得第一列之第一長列以 及第二列之第一長列，經組合成相同之虛擬長列。爲了檢視 程序之繼續，最好瑕疵辨識操作，係藉由比較影像” A F ”（ 比較晶粒A以及F )以及經儲存之比較影像” B A ”而執行， 以偵測在第一列之端緣晶粒” A ”。在步驟 1 0中，在結束第二長列之定向時，系統再次執行對於最後 晶粒影像之儲存，以對於接續列之處理。 經濟部智慧財產局員工消費合作社印製 在偶數個虛擬長列被檢視之後，在步驟1 1中，該系統 最好檢視晶粒，其係在較寬長列以檢視瑕疵。最終，每個虛 擬長列具有兩個（較寬）晶粒，其尙未被檢視。然而，剩餘 之端緣晶粒（其係位在虛擬長列處）係以即時之方式而完全 被檢視。 在上述討論中，本發明之方法係關於晶圓晶粒而予以描 述。特別是，本發明之方法可描述爲藉由比較該結構之單一 週期之兩個或更多週期，而檢視在週期結構之任意瑕疵之方 -14- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 1247876 Α7 Β7 五、發明説明（θ 法，使得該結構之此週期係與兩相鄰週期相比較。對於位於 此結構之端緣處之結構之週期，其端緣週期在同一列中只具 有單一個相鄰晶粒，至少兩個相鄰之一個係不直接相鄰於端 緣週期。本發明之方法係適合於藉由在得到週期相同列之相 同長列之前，而掃瞄週期之每一列之相反定向之偶數個長列 之此端緣週期。因此，每個列之所有接續等效長列係具有相 同之定向。 不直接相鄰於端緣週期，或”不相鄰週期”，之相鄰週期 影像，因此對於第一長列具有相同於端緣週期本身之影像的 定向。因此，不相鄰週期之第一長列影像，可直接與端緣週 期之第一長列影像相比較，而執行相鄰之比較。 如上述本發明之方法之此週期結構並不限制於半「晶圓 晶粒以及光罩。對於晶圓，每個晶粒係爲週期，而對於光罩 ，在光罩中之每個洞係爲週期。 上述描述係作爲例値，而許多其他實施例可在本發明之 精神以及範圍而爲可能。 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 -15- 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐）5. Description of the invention (1D (please read the note on the back and then fill out this page) and the first column of the second column, combined into the same virtual long column. In order to continue the inspection process, it is best to identify the operation. Performed by comparing the image "FA" (compare die F and A) with the stored comparison image "EF" to detect the die "F" at the end edge of the first column. In step 7, in When the process of scanning the long column is finished, the system repeats the process of storing the last die image so that the image can continue to perform the column processing. In step 8, the camera obtains the image of the second long column of the second column of the wafer die. The orientation of the image of the second long column of the first column is substantially the same as the image orientation of the second long column of the second column. In step 9, the long column is the continuation of the first long column, and the view is displayed.瑕疵, so that the first long column of the first column and the first long column of the second column are combined into the same virtual long column. For the continuation of the viewing process, it is better to identify the operation by comparing the image "AF" (compare grains A and F) and The stored comparison image "BA" is executed to detect the edge "A" at the end edge of the first column. In step 10, when the orientation of the second long column is ended, the system performs the image for the last die again. The storage is for the processing of the continuation column. The Ministry of Economic Affairs, the Intellectual Property Office, the employee consumption cooperative, printed after an even number of virtual long columns are inspected, in step 1 1 the system preferably looks at the grain, which is wider and longer. The column is inspected. Finally, each virtual long column has two (wider) grains, which are not examined. However, the remaining edge grain (the system is at the virtual long column) is instantaneous. In the above discussion, the method of the present invention is described with respect to wafer dies. In particular, the method of the present invention can be described as by comparing two or more cycles of a single cycle of the structure. And check the arbitrary structure of the periodic structure -14 - This paper scale applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 1247876 Α7 Β7 V. Invention Description (the θ method makes this cycle of the structure Comparing adjacent periods. For the period of the structure located at the edge of the structure, the end period has only one adjacent dies in the same column, and at least two adjacent ones are not directly adjacent to the end. The edge period. The method of the present invention is suitable for the end period of an even number of long columns of opposite orientations of each column of the scan period before the same long column of the same column is obtained. Therefore, each column All successive equivalent long columns have the same orientation. The adjacent periodic images are not directly adjacent to the edge period, or "non-adjacent periods", and thus have the same image of the end edge period itself for the first long column. Therefore, the first long column image of the non-adjacent period can be directly compared with the first long column image of the end edge period, and the adjacent comparison is performed. The periodic structure of the method of the present invention is not Limited to half of the "wafer die and mask. For wafers, each die is a cycle, and for a reticle, each hole in the reticle is a cycle. The above description is presented by way of example, and many other embodiments are possible in the spirit and scope of the invention. (Please read the notes on the back and fill out this page.) Printed by the Intellectual Property Office of the Ministry of Economic Affairs. -15- This paper scale applies to the Chinese National Standard (CNS) Α4 specification (210Χ297 mm)