TWI247357B - Method for improving footing defect in the semiconductor manufacture - Google Patents

Abstract

The invention is related to a method for improving footing defect in the semiconductor manufacture, comprising the steps of the following: firstly a SiON layer is formed. Then the first photo-resist is formed on the SiON layer. Next, the first photo-resist ashing is carried out after the photo-resist is developed during the photo rework process. Then, the surface of the SiON layer is of the SiON layer is exactly cleaned by the EKC solvent. Next, the oxygen treatment is accomplished to the surface of the SiON layer. Finally, the second photo-resist is formed on the SiON layer.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for improving Footing Defect in a semiconductor process, particularly in photoresist reshaping (pht). .

Rework) A method of applying oxygen treatment to improve the defect of the foot effect of the photoresist process. [Prior Art] In recent years, due to improvements in integrated circuit manufacturing equipment and development of semiconductor process materials, process technology for competing conductors has been continuously updated. The development of these new technologies, in addition to making the production costs of companies in the semiconductor-related industries more low-cost and more competitive, the semiconductor products derived from them can greatly improve the quality of life of human beings because of their better functions. Among the various process technologies of integrated circuits, the combination of photoresist and barrier technology is an important implementation technology in semiconductor process technology. The advantages and disadvantages of the barrier layer can directly affect various lithography technologies. Traditionally, the barrier layer technology uses the ruthenium oxynitride layer as the main barrier layer. The oxynitride layer is mostly made by chemical vapor deposition. In the conventional semiconductor barrier layer and photoresist development technology, first, as shown in FIG. A, a bismuth oxynitride (Si〇N) layer is formed on the SiON layer. A photoresist layer (Photo-Resist) 60 of a photoresist development step is formed. As shown in Fig. B, usually after photoresist development, some problems are found and thus photoresist rework is required. Therefore, the process of removing the photoresist v Ashi ng ) must be performed first.

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Next, as shown in the first c-graph, the surface of the ruthenium oxynitride layer is cleaned by a photoresist remover (ekc Solvent). Photoresist remover (ekc

Solvent) is mainly composed of NH20H. Thereafter, a photoresist layer 61 is formed as shown in the first D. Reshaped on the surface of the yttrium oxynitride layer 101, usually after the steps of "detection after photoresist development", aftei-development-inspection, ADI) in the above integrated circuit process, a defect of the footprint effect (F00ting Defect) is found. Phenomenon, the study is due to the loss of bismuth oxynitride in the process. Because after the photoresist is formed, the step of photoresist exposure is performed, a large amount of ions are generated, which causes the reduction and loss of the oxide layer, and S1〇N is easy to form a single bond on the surface, and the H+ ion is quickly replaced by nitrogen. Single bond capture of cerium oxide. This makes it difficult for oxygen (〇H-) ions to be carried away, resulting in poor exposure. "The error and inconvenience of the flying fly/description can not effectively carry out the development work of the semiconductor wafer, resulting in a decrease in the proper rate of the wafer, and the yield of the wafer production (Y, i el d ) will also be lowered, seriously affecting the production. The result will also increase the manufacturing cost of the semiconductor fab (Fab). 〆The above problems have also been formed in the manufacturing process of semiconductor wafer fabs.

The troubles of Putian are extremely urgent to improve the photoresist development step, so that the production of this roughing can be greatly improved, and the photoresist system can be improved actively and rapidly, and the yield can be improved. SUMMARY OF THE INVENTION In view of the above-mentioned manufacturing defects, the present invention relates to a half

1247357 _ Case No. 92134501_车月日__ V. Invention Description (3) Manufacturing method of conductor wafer, especially in the process of resist remanufacturing (Ph〇t〇Rework), applying oxygen treatment to improve the photoresist process The method of foot effect defects. It is an object of the present invention to improve the yield of a semiconductor process and to make the semiconductor wafer processing process more flexible and competitive. Therefore, in combination with the above objects, an embodiment of the present invention provides a method for improving a Footing Defect in a semiconductor process, including: First, forming a bismuth oxynitride by chemical vapor deposition (Si〇N) And forming a photoresist layer on the surface of the ruthenium oxynitride layer by a conventional lithography process. Continue to 'Photo-resist Ashing' with conventional plasma etching when PhotoRework is required after photoresist development. Next, the surface of the ruthenium oxynitride layer is cleaned by a photoresist remover (EKC Solvent) to remove the remaining photoresist, and the main component of the photoresist remover is NH2〇H. Thereafter, an oxyxy treatment step is performed on the surface of the oxynitride layer. Finally, a resist layer is formed on the surface of the yttrium oxynitride layer by a conventional lithography process. The above description of the present invention and other objects, features and advantages will become more apparent to those skilled in the art. [Embodiment] The following is a detailed description of the present invention, the I I I A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A

Page 12 1247357 V Description of invention (4) Demonstration method to participate in the old. A preferred method of using one of the inventions* will be discussed later, and this additional point will be described later. It is not intended to limit the invention. The invention is taught by one embodiment, but these descriptions should be understood, or applied. Moreover, although these examples use this, the device of the present invention may be replaced by a relevant portion. The invention is described and illustrated in the following: a description of the method of manufacture. These devices include the invention by way of example utility and application. And even if the invention is not limited to a preferred embodiment, it is described in addition to the embodiments described herein. Equivalent changes or modifications; = explained in the spirit of the disclosure The scope of the present invention is to include all of these repairs (Photo^Rew^?J i ^ Γ ^ ' 5 ^ ^ ^ f ^ method, first, as the second / map foot / effect defect (F〇〇Ung (four) (1) of the nitrogen-forming The oxidized stone (Si0:) vapor deposition method (CVD) is formed by a conventional lithography process = 1 layer; and on the surface of the dream layer, such as the surface, in the ΪΪίί deposition process, the principle is that the gas is present in the material 2: ί; ΐΓ ΐΓ ΐΓ ΐΓ ΐΓ ΐΓ ΐΓ ΐΓ ΐΓ ΐΓ ΐΓ ΐΓ ΐΓ ΐΓ ΐΓ ΐΓ ΐΓ ΐΓ ΐΓ ΐΓ ΐΓ ΐΓ ΐΓ ΐΓ ΐΓ ΐΓ ΐΓ ΐΓ ΐΓ ΐΓ ΐΓ ΐΓ ΐΓ ΐΓ ΐΓ ΐΓ ΐΓ ΐΓ ΐΓ ΐΓ ΐΓ ΐΓ ΐΓ ΐΓ ΐΓ ΐΓ ΐΓ ΐΓ Product = ΐ 愈 愈 愈 愈 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 Description (5) The development of technology, the most widely used chemical vapor deposition today For example, bismuth oxynitride is one of the most popular materials. As shown in Figure B, it is usually necessary to develop Photo Rework after photoresist development (Devel〇p). Photo-resist Ashing 71 is performed by etching. Then, as shown in FIG. C, the surface of the yttrium oxide layer 201 is cleaned by a photoresist remover (e κ c Solvent), thereby removing the remaining The photoresist is the main component of the photoresist remover, NH2〇H. Then, as shown in the second D diagram, Oxygen Treatment is performed on the surface of the ruthenium oxynitride layer 201 to increase the ruthenium oxynitride layer. 2〇1 The oxygen content of the surface. As long as the oxygen treatment step can form 3丨〇2 ring enthalpy; product> (10), the dry oxidation method can be used, and the wet oxygen can be used to reduce the ^^ method. The formation of the photoresist causes the loss of the oxynitride/stone oxide layer. The increase of the H+ ion is reduced, and the nitrogen/oxygen/single bond is formed on the surface. Thus, the oxygen and oxygen in the developer are easier to carry. Walking, increasing the exposure of the photoresist. The bond layer formed here is complete and difficult to form a single bond structure. Therefore, it is easy to use the body cloth. After the transfer, as shown in the figure, a photoresist layer 71 is formed on the surface of the ruthenium oxynitride layer 2〇1, and the first lithography process is formed. = The scope of application can be applied to all processes using a photoresist layer, the layer is a dual damascene process, or a semiconductor process using a hafnium oxynitride semiconducting ^t ^ (ARC) layer. The proper rate of clothing makes the semiconductor wafer processing process more flexible

1247357 V. Description of invention (6) and competitiveness. Moreover, according to the above-mentioned objects, the present invention has a relatively fast production speed in conjunction with the economical effect of industrialization, so that the process time can be saved to achieve cost saving. + Due to the many technologies of photoresist synthesis, the knowledge involved covers the fields of physics, chemistry, materials, chemicals and machinery. However, the composition of the photoresist is generally divided into four types, namely, a polymer (p〇lymer), a photoactive compound (PAC), an additive (addi t ive), and a solvent (s〇ivent). Generally, the positive photoresists are mainly based on the Novo lak resin. The molecular weight distribution, bond structure, monomer type and molecular structure of the resin affect the lithography process. For the additive portion of the photoresist, the characteristics of the low molecular weight or dye compound used are mainly studied. As for solvent research, it is more focused on safety and applicability. One characteristic of this type of photoresist is that it does not need to be baked after exposure, that is, the deprotection reaction occurs immediately after exposure, so that the surface of the substrate is prevented from being TiN, SiN, SiON and BPSG, and the photoresist profile is caused. There will be problems with Footing Defect. The above description is only for the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention; all other equivalent changes or modifications which are not departing from the spirit of the present invention should be included in the following patents. Within the scope. Τι

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Claims (1)

1247357 VI. Patent Application Scope 1. A method for improving a Footing Defect in a semiconductor crucible during a photoresist remanufacturing, comprising at least: forming a gas yttrium oxide ( a layer of S i 0 N ); forming a first photoresist layer on the surface of the ruthenium oxynitride layer; developing and removing the first photoresist layer; cleaning the surface of the ruthenium oxynitride layer by a solvent cleaning; Oxygen treatment) is performed on the surface of the nitrogen oxide: oxygen treatment to increase the oxygen content on the surface of the ruthenium oxynitride layer to form a conductor process. 2 If the application for special effects is included, it is included in the application. Tradition 4. If the application for special effects is lacking (Phot〇-I insect engraving method. 5. If the application of the special effect is lacking in the second light, the lithography of the square is improved. The square foot effect defect of the square resist range is described in Item 1. The method for improving the foot process in the semiconductor process wherein the above-described formation of a bismuth oxynitride layer is formed by at least a deposition method (CVD) to form a layer of oxynitride. Said half In the process of improving the process, the above method for forming the photoresist layer is as follows: less than the semiconductor method described in the first item, wherein the above-mentioned photoresist is removed. Foot Ashing) To the small-human 仏王夕 includes the use of conventional plasma In the semiconductor process, the method of improving the foot's surface, to the above, and the branch; Page 17 1247357 VI. Scope of application for patents Less cleaning with photoresist remover (E K C S ο 1 v e n t). 6. A method of improving a foot effect defect in a semiconductor process as described in claim 5, wherein the composition of the photoresist remover (EKC Solvent) comprises at least NH20H. 7. A method of improving a foot effect defect in a semiconductor process as described in claim 1 wherein said Oxygen Treatment comprises at least a dry oxidation process. 8. A method of improving a foot effect defect in a semiconductor process as described in claim 1 wherein said oxygen treatment comprises at least a wet oxidation process. 9. A method of improving a foot effect defect in a semiconductor process as described in claim 1 wherein said oxygen treatment comprises at least a vapor deposition method. A method of improving a foot effect defect in a semiconductor process as described in claim 1 wherein the forming of the second photoresist layer comprises at least a conventional lithography process. 11. A method for improving a Footing Defect in Photo Rework in a semiconductor process, comprising: forming a first photoresist layer on a surface of a ruthenium oxynitride layer; And removing the first photoresist layer; cleaning the surface of the ruthenium oxynitride layer; performing an oxygen treatment (Oxygen Treatment), performing oxygen treatment on the surface of the ruthenium ruthenium hydride layer to increase the gas content on the surface of the ruthenium oxynitride layer Page 18 1247357 Case No. 92134501 VI. Scope of Patent Application; Ά 修正 Correction Form a second photoresist layer to improve the defect of the foot effect on the surface of the yttrium oxide layer. The method of claim 13, wherein the forming of the photoresist layer comprises a conventional lithography process, as described in claim ii. To the method of the semiconductor process foot effect defect described in the i-th aspect of the patent scope, wherein the above-mentioned photoresist removal ^^-resist Ashing) includes at least the use of conventional electro-convergence A method for modifying a defect in a semiconductor process as described in the application of the patent scope, wherein the surface of the cleaned oxynitride layer is cleaned by a photoresist remover (EKC Solvent). • A method of modifying a foot effect defect in a semiconductor process as described in claim 14 of the patent application, wherein the composition of the photoresist remover (ΕΚ:: Solvent) contains at least a dragon 2〇11. The method of the item, wherein the above Oxygen Treatment comprises at least a dry oxidation process. • A method of improving a partial effect defect in a semiconductor process as described in claim 11 wherein said oxygen treatment comprises at least a wet oxidation process. An improvement in the semiconductor process described in the above section wherein the above oxygen treatment comprises at least a gas phase 18. A method of deposition of a foot effect defect as claimed in the patent application. Page 19 1247357 No. 92134501 曰 Amendment 6. Patent Application No. 19. A method for improving a foot effect defect in a semiconductor process as described in claim 1 wherein the forming of the second photoresist layer comprises at least a conventional The lithography process. Page 20