1246359 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種發光裝置，且特別是有關於一種有機 電致發光裝置（Organic ElectroLuminescent Device )。 【先前技術】 近年來，有機電致發光裝置（Organic ElectroLuminescent1246359 IX. Description of the invention: [Technical field to which the invention belongs] The present invention relates to a light emitting device, and more particularly to an organic electroluminescence device (Organic ElectroLuminescent Device). [Prior technology] In recent years, organic electroluminescence devices (Organic ElectroLuminescent
Device )以簡單的架構、極佳的工作溫度和反應速度' 鮮明的 色彩對比以及無視角限制等優勢，逐漸在顯示器市場中受到矚 目° 請參照第1圖，其繪示依照傳統之一種有機電致發光裝置 的剖面圖。傳統有機電致發光裝置1〇〇至少包括導電層1〇、功 函數層（work function layer) 11、有機材料發光層（〇rganic Emission Layer，OEL)12 以及陰極層（cathode layer)13。功函數 層11形成於導電層10上。導電層10與功函數層同組呈 一複合陽極（Anode)。有機材料發光層12形成於功函數層^ 上。陰極層13形成於有機材料發光層丨2上。其中，傳統之導 電層10通常由可導電的透明氧化物所組成，例如是銦錫氧化物 (Indium Tin Oxide，ΙΤΟ)。在製程上，塗布銦錫氧化物層之後， 需經過退火（annealing)製程，進行再結晶，用以降低電阻， 增加導電度，以利電致發光電流的傳遞。 然而’再結晶之銦錫氧化物所形成之導電層1 〇之表面不 平整，具有許多小凸起。當功函數層u以及有機材料發光層 12依序形成於導電層上後，導電層1〇之表面突起極易影響功 函數層11以及有機材料發光層12的形成平坦度，而在有機電 致發光裝置100中形成缺陷（defects )。如此一來，將會嚴重影 1246359 響到有機電致發光裝置100之運作品質。 請參照第2圖，其繪示依照傳統之另一種有機電致發光裝 置的剖面圖。傳統有機電致發光裝置200至少包括金屬層2〇衣 功函數層21、有機材料發光層22以及陰極層23。有機電致發 光裝置200係以具有平滑表面且反射率高之金屬層2〇取代上述 之導電層10，用以反射來自有機材料發光層22卻自顯示面之 相反侧射出的自發光線25，以增強發光強度。在製程上，功函 數層21係形成於金屬層2〇上。金屬層2〇較佳的是鋁或銀。之 後，以頁光微影（photolithography)製程使用光阻等感光性樹 脂材質形成間隔絕緣層以及間隔肋條（未顯示於圖中）於部分 之功函數層21上，用以定義出一個畫素的區域範圍。在黃光製 私中，通常以剝離劑（stripper)來清洗功函數層上不需要的光 阻。最後，依序形成有機材料發光層22以及陰極層23於功函 數層21上。 ' 然而，當金屬層20之材質為鋁時，由於功函數層2 i之厚 度很薄（約為50埃），且剝離劑之成份為有機鹼或無機鹼，導 致金屬層20在形成間隔絕緣層以及間隔肋條之製程後容易受 到剝離劑的侵蝕而產生缺陷並影響反射性。此外，當金屬層2〇 之材質為銀時，金屬層20之銀原子容易在有機電致發光裝置 200運作一段時間後擴散至功函數層2丨中，使得含有銀原子之 功函數層喪失掉原本所要發揮的功能。 【發明内容】 有鑑於此，本發明的目的就是在提供一種有機電致發光裝 置，其形成透明導電層於反射性金屬層上之設計，可以避免在 I成間隔絕緣層及間隔肋層所用到之剝離劑直接侵姓反射性金 1246359 ^層：亦可防止反射性金屬層的金屬原子擴散至功函數層。此 阳枯 _达月¥电層及溥膜電晶體之間的電 之導二且f昇陽極之導電度，正好可以解決傳統之透明導電層 制的問題。如此一來’透明導電層不需要以進行退火 衣矛壬之再結晶方式來提昇導雷 導雷心 木捉升w度’進而不會造成再結晶之透明 ^層的凹凸面影響功函數層以及有機材料發光層的性能問 根據本發明的目的’提出_種有機電致發光裝置，至少包 透明導屬層透明導電層、有機材料發光層以及陰極層。 明導電trr成於反射性金屬層之上’用以作為一陽極，透 透明導二」性：屬層電性連接。有機材料發光層係形成於 曰 陰極層係形成於有機材料發光層之上。 法，Γ:包本:::目二：出—種有機電致發光裝置之形成方 ^ μ , ^ΒΒ Ά ^ 、性金屬層上形成作為陽極之透明導 導電=射性金屬層電性…成有_ a之上，形成陰極層於有機材料發光層之上。 „上述目的、特徵、和優點能更 特舉一較佳貫施例，並配合所附圖式，作詳細說明如下： 【實施方式】 本發明之有機電致發 電層。透料電層不^極、、，°構主㈣-透明導 於一反射性金屬層。 其中，透明導電層電性連接 請參照第3圖，复給-丄々 光裝置的示意圖二7日不本發明之較佳實施例之有機電致發 &明之有機電致發光裝置3〇〇至少包括·· 1246359 ❹性金屬層54、透明導電層55、有機材料發光層59以及陰 :61。透明導電層55係形成於反射性金屬層μ之上，用以 機:陽極。透明導電層55係與反射性金屬層54電性連接， =材料發光層59係形成於透明導電層55之上，陰極層⑴系 形成於有機材料發光層59之上。 在應用上’亦可於上述之基本架構下，增添—些輔助元 :。Μ下係舉—主動式向上發光型（_㈣亦即反射 '金屬層位於有機材料發光層下方以將自發光向上反射之有機 二致發光裝置結構及其形成方法為例作詳細說明。然本較佳 貫施例不會對本發明作限縮。例如本發明之有機電致發光裝置 可以是-被動式有機電致發光裝置。此外，本發明可以是一向 下發光型（bottom emission)有機電致發光裝置，即反射性金 屬層位於有機材料發光層之上方。 ’ 請參照第4A〜4K圖，其緣示依照本發明一較佳實施例之 有枝電致卷光袭置之形成方法的示意圖。有機電致發光裝置 之形成=法包括以下步驟。首先’如第4A圖所示，在基板5〇 上形成薄膜電晶體51a及51b。接著，如第4B圖所示，形成具 有接觸孔52a之纟巴緣層52於基板50之上，絕緣層52覆蓋薄膜 電晶體51a及51b，接觸孔52a係暴露薄膜電晶體5U之一端， 如汲極。絕緣層52係使用有機材料，較佳的是有機高分子材 料，例如是日本合成橡膠（Japan synthetic rubber，jsr )公司 生產的PL402型的Resin Acrylic。然後，如第4C圖所示，形 成黏著層53於纟G緣層52上，黏著層較佳地為一銦錫氧化物層 (indium Tin 〇xide，ITO )，目的為使之後的反射性金屬層能與 絕緣層結合性更好。接著，如第4D圖所示，形成反射性金屬 層54於黏著層53上，反射性金屬層54係與薄膜電晶體5U之 1246359 沒極電性連接，反㈣金屬層54@ 如是大於500A以達較佳反射率 疋=銀或銘，其厚度例 射性金屬層54上形成一作為 《犯圖所示，在反 電声55係盥马如以人俺 ％極之透明導電層55 ’透明導 電層55係與反射性金屬層54電性連接 月導 鋼錫氧化物（⑽以及姻鋅氧化物（IZ〇)月導電層55例如是 =圖所示，形成間隔絕緣層56於部分 上=㈣如下所述。首先，形成絕緣 _ = '接者，形成第一光阻層於間隔絕緣層上。接著透月： 化第一光阻層以形成一遮罩。之 圖案 隔絕緣層56。最後，以l 、心、、日圖案化以形成間 以顯現出間隔絕緣層56。剝 先阻層， 去亩垃，、… 剤例如是有機鹼或無機鹼。又或 者直接以感光性的樹脂材料塗佈於透明導電層上^ 光阻製程直接將感紐樹脂㈣形成_ 使用剝離劑。 I』樣亦須 如：4G圖所示，形成一間隔肋層（rib) 57於間隔絕緣， ，4細步驟如下所述。首先，再形成—絕緣層於間隔^ 笛曰上。接著，形成第二光阻層於絕緣層上。然後，圖案化 苐=先阻層以形成-遮罩。最後，以剝離劑（StHp㈣去除第 二光阻層’以顯現出間隔肋層57。剝離劑例如是有機驗益 、 或者直接以感光性的樹脂材料塗佈於透明導電層上，再 以圖案化光JI且製程直接將感光性樹脂材料形成間隔絕緣層％， 2樣亦須使用剝離劑。由於透明導電層55覆蓋住反射性金屬層 54 2以在形成間隔絕緣層56及間隔肋層57所用到之剥離劑 二曰k蝕到反射性金屬層54。進一步地說，現行一般的透明導 電層55的材f均可耐圖案化製程中顯影所用的驗，用以保護反 射11金屬層54 ’避免剝離劑侵蝕反射性金屬層54。 1246359 如弟4H圖所示，在間臨 -第-功函數層58於另—部分:‘層56及間隔肋層57旁形成 第一功函數層係一錄、-辞氧射明導電層55上。較佳的是’ 以及-碳氫化合物（CHx A —氟碳化合物（CFX) 形成第-功函數層後，再依在其他實施例中，可在 一功函數層上。然後，如第41 =間隔絕緣層及間隔肋層於第 τ U ^ Θ斤不，形成有機材料發光層59 ::功函數層58上。接著，如第4J圖所示 =60於有機材料發光層59上。第二功函數層例如是：氟 力=(L1FX)。最後’如第4K圖所示，形成 ==，上。，極61較㈣ 险枉##π东亦了不形成第二功函數層而直接形成陰極層，此 =極層f依序形成㈣’再將鎂層形成於在㈣上的方式形 烕’也是常用的較佳選擇。 凊參照第4L圖，其綠示乃沿著第4K圖之4L_4L，剖面線 視之有機電致發光裝置的剖面圖。本發明之有機電致發光裝 〇〇包括基板50、薄膜電晶體51a、絕緣層52、黏著層、 反射性金屬層54、透明導電層55、第—功函數層58、有機材 ，發光層59、第二功函數層6〇以及陰極層61。基板5〇上具有 缚膜電晶體51a。絕緣層52係覆蓋於基板5()以及薄膜電晶體 51。黏著層53用以接合絕緣層52以及反射性金屬層54。反射 性金屬層54用以幫助為陽極之透明導電層55及薄膜電晶體 之間的導電橋樑，以提昇陽極之導電度。透明導電層55以及第 一功函數層58係位於反射性金屬層54上，用以作為有機電致 t光裝置50〇之複合陽極（anode)。有機發光材料層59係形成 於第一功函數層58上，用以於電子及電洞結合時可發出光線， 反射性金屬電極54將反射光線。第二功函數層60係形成於有 1246359 機發先材料層59上。陰極層61係 笼一仂〒鉍爲η〆 ，、/成於弟二功函數層61上 第一功函數層61係可提高陰極層 以獲得最佳的發光效果。 之力函數以與陽極匹配 本發明上述實施例所揭露之有機電致發光裝置， 明導電層於反射性金屬層上之設^_ χ «. „ ^之°又汁，可以避免在形成間隔絕緣 層及間㈣層所關之剝__反射性金屬I此外，反射 =屬層可以降低透明導電層及薄膜電晶體之間的電阻值，且 提昇陽極之導電度，正好可讀決傳統之透 良的問題。如此-來’透明導電層不需要以進行退火製2= 結曰曰方式认升導電度，進而不會造成再結晶之透 凹凸面影響有機材料發光層或陰極層的性能問題。 、，“上所述’雖然本發明已以—較佳實施例揭露如上，然其 I非用以限疋本發明’任何熟習此技藝者，在不脫離本發明之 精神和範圍内’當可作各種之更動與潤飾，因此本發明 範圍當視後附之中請專利範圍所界定者為準。 … 11 1246359 圖式簡單說明】 第1圖繪示依照傳統之一種有趟卞 # ’殊電致發光裝置的剖面圖。 第2圖繪示依照傳統之另一簇士 圖 有機電致發光裝置的剖面 〇 第3圖繪示本發明之較佳實施你丨令+ ^ 例之有機電致發光裝置的示 思圖。 第4A〜4K圖繪示依照本發明一如仏— ^ 較佳實施例之有機電致發 光裝置之形成方法的示意圖。 第4L圖繪示根據第4K圖中41^41/ 戶斤示之有機電致發光裝置的剖面 圖 剖面線且沿箭頭方向 【主要元件符號說明】 10 :導電層 11 :功函數層 12 :發光層 13 :陰極層 b :自發光線 20 :金屬層 21 ·功函數層 22 :發光層 2 3 ·陰極層 25 :自發光線 5〇 :基板 51a、51b :薄膜電晶體 52a :接觸孔 5 2 :絕緣層 12 1246359 53 :黏著層 54 :反射性金屬層 55 :透明導電層 56 :間隔絕緣層 57 :間隔肋層 58 ··第一功函數層 59 :有機材料發光層 60 :第二功函數層 61 :陰極層 100、200、300、500、600 ··有機電致發光裝置 13Device) With its simple structure, excellent working temperature and response speed, 'bright color contrast, and no viewing angle limitation, it has gradually attracted attention in the display market. Please refer to Figure 1, which shows a traditional organic electricity Sectional view of an electroluminescent device. The conventional organic electroluminescent device 100 includes at least a conductive layer 10, a work function layer 11, an organic material emission layer (OEL) 12, and a cathode layer 13. A work function layer 11 is formed on the conductive layer 10. The conductive layer 10 and the work function layer form a composite anode (Anode) in the same group. The organic material light emitting layer 12 is formed on the work function layer ^. The cathode layer 13 is formed on the organic material light emitting layer 2. Wherein, the conventional conductive layer 10 is usually composed of a conductive transparent oxide, such as indium tin oxide (ITO). In the manufacturing process, after coating the indium tin oxide layer, an annealing process is required to perform recrystallization to reduce the resistance and increase the conductivity to facilitate the transfer of electroluminescence current. However, the surface of the conductive layer 10 formed by the 'recrystallized indium tin oxide is uneven and has many small protrusions. After the work function layer u and the organic material light-emitting layer 12 are sequentially formed on the conductive layer, the surface protrusion of the conductive layer 10 can easily affect the formation flatness of the work function layer 11 and the organic material light-emitting layer 12. Defects are formed in the light emitting device 100. As a result, the operation quality of the organic electroluminescent device 100 will be seriously affected. Please refer to FIG. 2, which illustrates a cross-sectional view of another conventional organic electroluminescence device. The conventional organic electroluminescent device 200 includes at least a metal layer, a work function layer 21, an organic material light emitting layer 22, and a cathode layer 23. The organic electroluminescent device 200 replaces the conductive layer 10 with a metal layer 20 having a smooth surface and a high reflectance to reflect the self-luminous wires 25 from the organic material light-emitting layer 22 but emitted from the opposite side of the display surface. Enhance luminous intensity. In the manufacturing process, the work function layer 21 is formed on the metal layer 20. The metal layer 20 is preferably aluminum or silver. Then, a photolithography process is used to form a spacer insulation layer and a spacer rib (not shown) on a part of the work function layer 21 by using a photosensitive resin material such as a photoresist to define a pixel. geographic range. In Huangguang, strippers are usually used to clean unwanted photoresist on the work function layer. Finally, an organic material light emitting layer 22 and a cathode layer 23 are sequentially formed on the work function layer 21. 'However, when the material of the metal layer 20 is aluminum, the thickness of the work function layer 2 i is very thin (about 50 angstroms) and the composition of the release agent is an organic or inorganic base, which causes the metal layer 20 to form a gap insulation. Layers and spacer ribs are susceptible to erosion by the release agent after the manufacturing process, resulting in defects and affecting reflectivity. In addition, when the material of the metal layer 20 is silver, the silver atoms of the metal layer 20 are easily diffused into the work function layer 2 after the organic electroluminescence device 200 is operated for a period of time, so that the work function layer containing the silver atoms is lost. The original function. [Summary of the Invention] In view of this, the object of the present invention is to provide an organic electroluminescence device, which is designed to form a transparent conductive layer on a reflective metal layer, which can avoid the use of a spacer insulation layer and a spacer rib layer. The stripping agent directly invades the reflective gold 1246359 ^ layer: it can also prevent the metal atoms of the reflective metal layer from diffusing into the work function layer. This impregnated conductivity is between the electric layer and the tritium film transistor, and the conductivity of the f liter anode can just solve the problem of the traditional transparent conductive layer. In this way, the "transparent conductive layer does not need to be recrystallized to anneal the spear to increase the degree of lightning resistance of the lead and thunder heartwood", so as not to cause the uneven surface of the recrystallized transparent layer to affect the work function layer and According to the object of the present invention, the performance of the organic material light-emitting layer is proposed. An organic electroluminescent device includes at least a transparent conductive layer, a transparent conductive layer, an organic material light-emitting layer, and a cathode layer. The bright conductive trr is formed on the reflective metal layer 'to serve as an anode, and is transparent and transparent. The second property is that the layer is electrically connected. The organic material light emitting layer is formed on the cathode layer system is formed on the organic material light emitting layer. Method, Γ: package ::: head two: a method for forming an organic electroluminescence device ^ μ, ^ ΒΒ Ά ^, forming a transparent conductive layer as an anode on a conductive metal layer = radioactive metal layer ... Formed above a, forming a cathode layer on the organic material light emitting layer. „The above objects, features, and advantages can be more specifically described in conjunction with a preferred embodiment, and are described in detail with the accompanying drawings: [Embodiment] The organic electro-electric power generation layer of the present invention. The main structure of the polar, transparent, and transparent conductive layers is a reflective metal layer. Among them, please refer to Figure 3 for the electrical connection of the transparent conductive layer. The organic electroluminescence device 300 of the embodiment includes at least 1246359 organic metal layer 54, transparent conductive layer 55, organic material light-emitting layer 59, and anion: 61. The transparent conductive layer 55 is formed On the reflective metal layer μ, it is used as an anode. The transparent conductive layer 55 is electrically connected to the reflective metal layer 54. The material light emitting layer 59 is formed on the transparent conductive layer 55, and the cathode layer is formed. On top of the organic material light-emitting layer 59. In the application, it is also possible to add—some auxiliary elements: .M under the system—active upward light-emitting type (_㈣, that is, a reflective metal layer is located in the organic material). Under the luminescent layer The structure of the organic electroluminescent device and the method for forming the organic electroluminescent device are described in detail as examples. However, the preferred embodiments do not limit the present invention. For example, the organic electroluminescent device of the present invention may be a passive organic electroluminescent device. In addition, the present invention may be a bottom emission organic electroluminescence device, that is, a reflective metal layer is positioned above the organic material light emitting layer. 'Please refer to FIGS. 4A to 4K, which shows the edge according to the first aspect of the present invention A schematic diagram of a method for forming a branched electroluminescence device according to a preferred embodiment. The method of forming an organic electroluminescence device includes the following steps. First, as shown in FIG. 4A, a thin film transistor is formed on a substrate 50. 51a and 51b. Next, as shown in FIG. 4B, a bump edge layer 52 having a contact hole 52a is formed on the substrate 50. The insulating layer 52 covers the thin film transistors 51a and 51b. The contact hole 52a exposes the thin film transistor 5U. One end, such as the drain electrode. The insulating layer 52 is made of an organic material, preferably an organic polymer material, such as PL402 type Re produced by Japan Synthetic Rubber (JSR). sin Acrylic. Then, as shown in FIG. 4C, an adhesive layer 53 is formed on the 纟 G edge layer 52. The adhesive layer is preferably an indium tin oxide layer (ITO), for the purpose of The reflective metal layer can be better combined with the insulating layer. Next, as shown in FIG. 4D, a reflective metal layer 54 is formed on the adhesive layer 53, and the reflective metal layer 54 is 1246359 with the thin film transistor 5U. Sexual connection, anti-㈣metal layer 54 @ if it is greater than 500A for better reflectance 疋 = silver or Ming, the thickness of the radio-active metal layer 54 is formed as a "figure, shown in the anti-electroacoustic 55 series toilet For example, the transparent conductive layer 55 ′ is electrically connected to the reflective metal layer 54. The transparent conductive layer 55 is made of tin oxide (⑽ and zinc oxide (IZ)). The conductive layer 55 is, for example, = As shown in the figure, the spacer insulating layer 56 is formed on a part of the part as follows. First, an insulating _ = 'connector is formed, and a first photoresist layer is formed on the spacer insulating layer. Then through the moon: the first photoresist layer is formed to form a mask. Of pattern insulation margin layer 56. Finally, the pattern is formed with l, heart, and day to form spaces to show the space insulating layer 56. Peel the barrier layer first, go to the acres, ..., for example, organic or inorganic base. Or directly apply a photosensitive resin material to the transparent conductive layer ^ The photoresist process directly forms the sensory resin _ using a release agent. I ”samples must also be formed as shown in the 4G diagram to form a spacer rib 57 (spacer insulation). The 4 detailed steps are as follows. First, re-form-the insulation layer is on the space. Next, a second photoresist layer is formed on the insulating layer. Then, patterning 苐 = resistive layer first to form -mask. Finally, the release layer (StHp㈣) is used to remove the second photoresist layer to display the spacer rib layer 57. The release agent is, for example, organic, or directly coated with a photosensitive resin material on the transparent conductive layer, and then patterned. Light JI and the process directly form the photosensitive resin material to form the spacer insulating layer%, and both must also use a release agent. Since the transparent conductive layer 55 covers the reflective metal layer 54 2 to form the spacer insulating layer 56 and the spacer rib layer 57 The resulting release agent etches the reflective metal layer 54. Furthermore, the current general material f of the transparent conductive layer 55 can withstand the tests used in the patterning process to protect the reflective 11 metal layer 54 ' Prevent the stripper from attacking the reflective metal layer 54. 1246359 As shown in the figure 4H, a first work function layer system is formed next to the interim-first-work function layer 58 next to the: 'layer 56 and the spacer rib layer 57. Recording,-the oxygen radiates on the conductive layer 55. It is preferable to form a first work function layer after forming a first work function layer with a hydrocarbon (CHx A-fluorocarbon (CFX)), and in other embodiments, the A work function layer. Then, as in the 41st = The insulating edge layer and the spacer rib layer are formed on the τ U ^ Θ to form an organic material light-emitting layer 59 :: work function layer 58. Then, as shown in FIG. 4J, = 60 is on the organic material light-emitting layer 59. Second The work function layer is, for example, fluorine force = (L1FX). Finally, as shown in FIG. 4K, it is formed as ==, up., Pole 61 is more direct than 枉 枉The cathode layer is formed, and this = the electrode layer f sequentially forms ㈣ ', and then the magnesium layer is formed on the ㈣, which is also commonly used. 凊 Refer to Figure 4L, and the green display is along Figure 4K. 4L_4L, a cross-sectional view of an organic electroluminescence device as viewed in section. The organic electroluminescence device of the present invention includes a substrate 50, a thin film transistor 51a, an insulating layer 52, an adhesive layer, a reflective metal layer 54, and a transparent conductive material. Layer 55, first work function layer 58, organic material, light emitting layer 59, second work function layer 60, and cathode layer 61. The substrate 50 has a film-bound transistor 51a. The insulating layer 52 covers the substrate 5 () And thin film transistor 51. Adhesive layer 53 is used to join insulating layer 52 and reflective metal layer 54. Reflective metal layer 54 is used to Helps the conductive bridge between the transparent conductive layer 55 of the anode and the thin film transistor to improve the conductivity of the anode. The transparent conductive layer 55 and the first work function layer 58 are located on the reflective metal layer 54 and are used as organic electricity The composite anode (node) to the light device 50. The organic light emitting material layer 59 is formed on the first work function layer 58 to emit light when the electrons and holes are combined, and the reflective metal electrode 54 will reflect the light The second work function layer 60 is formed on the 1246359 organic material layer 59. The cathode layer 61 is a cage-bismuth as η〆, and is formed on the first work function layer 61 on the second work function layer 61. The system can increase the cathode layer to obtain the best luminous effect. The force function matches the anode with the organic electroluminescence device disclosed in the above embodiments of the present invention. The arrangement of the conductive layer on the reflective metal layer is ^ _ χ «.„ ^ °°, which can avoid the formation of gap insulation. The peeling of the layers and interlayers __Reflective metal I In addition, the reflection = metal layer can reduce the resistance between the transparent conductive layer and the thin film transistor, and improve the conductivity of the anode, which is just readable and determines the traditional transparency This is a good question. So-the 'transparent conductive layer' does not need to be annealed to increase the conductivity, so as not to cause the problem of performance of the light emitting layer or the cathode layer of the organic material caused by the re-crystallized concave-convex surface. "," Said above "Although the present invention has been disclosed as above with the preferred embodiment, it is not intended to limit the present invention." Any person skilled in the art can do so without departing from the spirit and scope of the present invention. " Various modifications and retouching are made, so the scope of the present invention shall be determined by the scope of the attached patents. … 11 1246359 Brief Description of the Drawings] Figure 1 shows a cross-sectional view of a conventional electroluminescence device having a trip # ′. Fig. 2 shows a cross section of an organic electroluminescence device according to another traditional figure. Fig. 3 shows a schematic diagram of an organic electroluminescence device of a preferred embodiment of the present invention. Figures 4A to 4K are schematic diagrams illustrating a method for forming an organic electroluminescent device according to the present invention, such as the preferred embodiment. FIG. 4L shows a cross-sectional view of the organic electroluminescence device according to 41 ^ 41 / household in FIG. 4K. The line is in the direction of the arrow. [Description of the main component symbols] 10: Conductive layer 11: Work function layer 12: Luminescence Layer 13: Cathode layer b: Self-luminous wire 20: Metal layer 21 Layer 12 1246359 53: Adhesive layer 54: Reflective metal layer 55: Transparent conductive layer 56: Spacer insulation layer 57: Spacer rib layer 58First work function layer 59: Organic material light emitting layer 60: Second work function layer 61 : Cathode layer 100, 200, 300, 500, 600 ·· Organic electroluminescence device 13