1245945 玖、發明說明： 【發明所屬之技術領域】 本發明係關於一種液晶顯示裝置及熱壓頭，特別是關於 可改善覆晶玻璃（Chip on Glass，COG)製程中接合（b〇nding) 狀況之液晶顯示裝置及熱壓頭。 【先前技術】 參考圖1，顯示習用液晶顯示裝置於覆晶破璃製程之示意 圖。#亥液晶顯示裝置10包括一基板11及一晶片12，該芙板 Π具有複數個接墊（bonding pad)lll，該晶片12具有複數個 凸塊（bump)121，每一該接墊ill與每一該凸塊121係相對 應’此一覆晶玻璃製程先於該基板11及該晶片12之間加入 一兴方性導電層（ACF)(圖中未示），再利用一熱壓頭2〇將該 晶片12壓合於該基板丨丨上。然而在實務上常可發現該晶片 12壓合於該基板丨丨後，某些位置之接墊lu與凸塊ΐ2ι間之 接合（bonding)狀況並不理想，而造成製程上之瑕疵。 參考圖2,顯示習用液晶顯示裝置中接墊與凸塊間接合狀 況 < 示意圖。由圖中可看出在晶片12二側附近，接墊丨丨丨與 凸塊12 1間係為不良之接合。造成此狀況之原因可能有下列 一種第，由於该晶片12通常為長條形（例如：長寬比約 為16 · 1)，因此在該晶片丨2壓合於該基板丨丨後，因為長寬 比太大、凸塊121排列不均、異方性導電層的流動或是熱效 應等原因而造成晶片12之一部份（例如長邊二側）發生翹 曲，因而使得該部分接合較在晶片12其他部分（例如中央區 域）差。第二，由於該熱壓頭20與該晶片12接觸之表面係為1245945 发明 Description of the invention: [Technical field to which the invention belongs] The present invention relates to a liquid crystal display device and a thermal head, and in particular, to improving a bonding condition in a chip on glass (COG) process. Liquid crystal display device and thermal head. [Prior Art] Referring to FIG. 1, a schematic diagram of a conventional liquid crystal display device in a flip chip breaking process is shown. # 海 LCD display device 10 includes a substrate 11 and a wafer 12, the wafer board Π has a plurality of bonding pads 111, the wafer 12 has a plurality of bumps 121, and each of the pads ill and Each of the bumps 121 corresponds to 'this flip-chip glass manufacturing process first adds a square conductive layer (ACF) (not shown) between the substrate 11 and the wafer 12, and then uses a thermal head 20. The wafer 12 is pressed onto the substrate. However, in practice, it can often be found that after the wafer 12 is pressed onto the substrate, the bonding condition between the pads lu and the bumps 2m in some positions is not ideal, which causes defects in the manufacturing process. Referring to FIG. 2, a schematic diagram of a bonding condition between a pad and a bump in a conventional liquid crystal display device is shown. It can be seen from the figure that near the two sides of the wafer 12, the bonding pad 丨 丨 丨 and the bump 121 are in a bad joint. The reason for this may be one of the following. Since the wafer 12 is generally elongated (for example, the aspect ratio is about 16 · 1), after the wafer 丨 2 is pressed onto the substrate 丨 丨The aspect ratio is too large, uneven arrangement of the bumps 121, the flow of the anisotropic conductive layer, or thermal effects, etc., cause a part of the wafer 12 (such as the two sides of the long side) to warp, so that the part is more bonded. Other parts of the wafer 12 (for example, the central area) are poor. Second, because the surface of the thermal head 20 and the wafer 12 is in contact with
O:\90\90814.DOC 1245945 平一之表面，其在壓合過程中因應力或熱效應而造成對該 晶片12二側之施力較弱，因而使得在晶片12二側之接合較 在晶片12中央區域差。 因此，有必要提供一創新且富進步性的液晶顯示裝置及 熱壓頭，以解決上述問題。 【發明内容】 本發明之主要目的係使基板上之一接墊與對應之晶片上 <凸塊足總高度不同於另一接墊與對應之凸塊之總高度， 以改善基板之接墊與晶片之凸塊間接合不良的情況，其方 式可以為加高接墊或是凸塊之高度，或是二者同時加高高 度。 门门 本發明之另一目的係提供一種液晶顯示裝置，其包括一 基板及一晶片，該基板具有複數接墊，設於該基板之上方。 該晶片具有複數凸塊，設於該晶片之下方，與該等接墊互 呈對應接觸，該等接墊之至少其中之一與其相對應之該凸 塊係形成一接觸區域，其特徵在於該接觸區域具有不同之 水平高度。 本發明之又一目的係使熱壓頭與晶片接觸之表面具有一 哭出部分，以增加該熱壓頭對該晶片於接合不良之處之施 力’改吾基板之接塾與晶片之凸塊間接合不良的情況。 本發明之又一目的係提供一種晶片，其係被一熱壓頭壓 合於一基板上，該晶片與該熱壓頭接觸之上表面具有至少 一哭出邵分，以增加該熱壓頭對該晶片於接合不良之處之 知力’改善基板之接塾與晶片之凸塊間接合不良的情況。O: \ 90 \ 90814.DOC 1245945 The flat surface has a weaker force on the two sides of the wafer 12 due to stress or thermal effects during the lamination process, thus making the bonding on the two sides of the wafer 12 better than on the wafer 12 Poor central area. Therefore, it is necessary to provide an innovative and progressive liquid crystal display device and a thermal head to solve the above problems. [Summary of the invention] The main purpose of the present invention is to make the total height of one pad on the substrate and the corresponding wafer < the total height of the bumps different from the total height of the other pad and the corresponding bumps to improve the pads of the substrate. In the case of poor bonding with the bumps of the wafer, the way can be to increase the height of the pads or bumps, or both. Door Door Another object of the present invention is to provide a liquid crystal display device, which includes a substrate and a wafer, the substrate having a plurality of pads disposed above the substrate. The wafer has a plurality of bumps, which are arranged below the wafer and make corresponding contact with the pads. At least one of the pads and the bumps corresponding to the pads form a contact area, which is characterized in that: The contact areas have different horizontal heights. Another object of the present invention is to make the surface of the thermal indenter in contact with the wafer have a crying portion, so as to increase the force of the thermal indenter on the wafer at the place where the bonding is not good, to change the connection between the substrate and the convexity of the wafer. Poor joints between blocks. Another object of the present invention is to provide a wafer, which is pressed onto a substrate by a thermal indenter, and the upper surface of the wafer in contact with the thermal indenter has at least one crying point to increase the thermal indenter. The knowledge of the wafer at the place of poor bonding 'improves the situation of poor bonding between the substrate connection and the bumps of the wafer.
O:\90\908U.DOC 1245945 【實施方式】 本發明之主要特點係在於於基板之接墊與晶片之凸塊間 接合不良的地方，加高接墊或是凸塊之高度，或是二者同 時加高高度，或是突出熱壓頭之表面以增加施力。 參考圖5 ’顯示本發明第一實施例液晶顯示裝置之側視示 意圖，該液晶顯示裝置30包括一基板31及一晶片32。 參考圖3圖4，分別顯示本發明第一實施例液晶顯示裝置 中基板及晶片之俯視示意圖。該基板3 1具有複數個接整 311，該等接墊311定義出一基板覆晶區312。該晶片32具有 複數個凸塊321，該等凸塊321定義出一晶片覆晶區322。 再參考圖5 ’頻示本發明第一實施例液晶顯示裝置之側視 示意圖，由圖中可看出在基板31上之該等接墊311之高度不 完全相同’亦即該等接塾311中一接塾之高度不同於另一接 整之咼度。在本實施例中，位於該基板覆晶區3 12二側之接 墊3 11係高於位於該基板覆晶區3丨2中央區域之接墊3丨3。另 外，在該晶片32上之該等凸塊321不完全相同，亦即該等凸 塊321中一凸塊之咼度不同於另一凸塊之高度。在本實施例 中’位於該晶片覆晶區322二側之凸塊321係高於位於該晶 片覆晶區322中央區域之凸塊323。如此使得該等接塾中一 接墊與對應之凸塊之總高度不同於另一接墊與對應之凸塊 之總高度，如圖中所示，位於中央區域之接墊313與對應之 凸塊3 2 3之總高度即小於位於二側之接塾3 11與對應之凸塊 32 1之總高度。然而可以理解的是，本實施例之基板3丨之接 墊及晶片32之凸塊的高度並不一定要等比例對應；例如，O: \ 90 \ 908U.DOC 1245945 [Embodiment] The main feature of the present invention is to increase the height of the pads or bumps at the place where the bonding between the pads of the substrate and the bumps of the wafer is poor, or two. Either increase the height at the same time, or protrude the surface of the thermal head to increase the force. Referring to FIG. 5 ', a schematic side view of a liquid crystal display device according to a first embodiment of the present invention is shown. The liquid crystal display device 30 includes a substrate 31 and a wafer 32. Referring to FIG. 3 and FIG. 4, schematic top views of a substrate and a wafer in a liquid crystal display device according to a first embodiment of the present invention are shown. The substrate 31 has a plurality of joints 311. The pads 311 define a substrate flip-chip region 312. The wafer 32 has a plurality of bumps 321, and the bumps 321 define a wafer flip-chip region 322. Referring again to FIG. 5 'a schematic side view of the liquid crystal display device according to the first embodiment of the present invention, it can be seen from the figure that the heights of the pads 311 on the substrate 31 are not exactly the same', that is, the pads 311 The height of the first connection is different from the height of the other connection. In this embodiment, the pads 3 11 located on the two sides of the substrate cladding region 3 12 are higher than the pads 3 丨 3 located in the central region of the substrate cladding region 3 丨 2. In addition, the bumps 321 on the wafer 32 are not exactly the same, that is, the height of one bump in the bumps 321 is different from the height of another bump. In this embodiment, the bumps 321 located on both sides of the wafer cladding region 322 are higher than the bumps 323 located in the central region of the wafer cladding region 322. In this way, the total height of one pad and the corresponding bump in these joints is different from the total height of the other pad and the corresponding bump. As shown in the figure, the pad 313 and the corresponding bump in the central area are shown in the figure. The total height of the blocks 3 2 3 is less than the total height of the joints 3 11 on the two sides and the corresponding bumps 32 1. It can be understood, however, that the heights of the pads of the substrate 3 丨 and the bumps of the wafer 32 in this embodiment do not necessarily correspond in proportion; for example,
O:\90\90814.DOC 1245945 具不同高度接墊之基板3 1所對應晶片之凸塊可以是全部同 —高度，或是具不同高度凸塊之晶片32所對應之基板之接 塾可以全部是同一高度，皆可改善在晶片32二側附近，接 塾3 11與凸塊3 2 1間不良接合之情況。 參考圖6，顯示本發明第二實施例液晶顯示裝置之側視示 意圖。在本實施例之液晶顯示裝置40中，該基板41上之該 等接塾4 11之南度係由該基板覆晶區之一側（如圖中右側）向 孩基板覆晶區另一側（如圖中左側）遞減。另外，該晶片42 上之該等凸塊421之高度係由該晶片覆晶區之一側（如圖中 右側）向居曰曰片覆晶區另一側遞減（如圖中左側）。同樣的， 基板4 1 <接墊及晶片42之凸塊的高度並不一定要等比例對 應’例如’具不同高度接墊之基板41所對應晶片之凸塊可 以疋全邵同一咼度，或是具不同高度凸塊之晶片42所對應 基板疋接墊可以是同一高度，皆可改善在晶片42右側附 近’接塾411與凸塊421間不良接合之情況。 參考圖7 ’顯示本發明第三實施例液晶顯示裝置之側視示 思圖。在本實施例之液晶顯示裝置50中，該基板5 1上右半 側之接墊5 11之高度係皆高於左半側之接墊5 12。另外，該 曰曰片52上右半側之凸塊521之高度係皆高於左半側之凸塊 522。本貫施例基板51之接墊及晶片52之凸塊的高度並不一 疋要等比例對應；例如，具不同高度接墊之基板5丨所對應 <曰曰片足凸塊可以是全部同一高度，或是具不同高度凸塊 〈曰曰片52所對應基板之接墊可以是同一高度，皆可改善在 晶片52右半側附近，接墊5 11與凸塊52 1間不良接合之情沉。O: \ 90 \ 90814.DOC 1245945 The bumps of the wafer corresponding to the substrate 31 with different height pads can be all the same height, or the contacts of the substrate corresponding to the wafer 32 with bumps of different heights can be all It is the same height, which can improve the bad joint between the contact 3 11 and the bump 3 2 1 near the two sides of the wafer 32. Referring to Fig. 6, a schematic side view of a liquid crystal display device according to a second embodiment of the present invention is shown. In the liquid crystal display device 40 of this embodiment, the south of the contacts 4 11 on the substrate 41 is from one side (right side in the figure) of the substrate cladding region to the other side of the substrate cladding region. (As shown on the left in the figure). In addition, the height of the bumps 421 on the wafer 42 decreases from one side of the wafer flip-chip region (right side in the figure) to the other side of the wafer flip-chip region (left side in the figure). Similarly, the heights of the bumps of the substrate 4 1 < pads and wafers 42 do not have to correspond in proportions, for example, the bumps of the wafers corresponding to the substrates 41 with pads of different heights can be the same degree, Alternatively, the substrate pads corresponding to the wafers 42 with bumps of different heights can be the same height, which can improve the poor bonding between the pads 411 and the bumps 421 near the right side of the wafer 42. Referring to FIG. 7 ', a schematic side view of a liquid crystal display device according to a third embodiment of the present invention is shown. In the liquid crystal display device 50 of this embodiment, the height of the pads 5 11 on the right half of the substrate 51 is higher than that of the pads 5 12 on the left half. In addition, the height of the bumps 521 on the right half of the sheet 52 is higher than that of the bumps 522 on the left half. In the present embodiment, the heights of the pads of the substrate 51 and the bumps of the wafer 52 do not have to be proportionally matched; for example, the substrate 5 with pads of different heights corresponding to < , Or bumps with different heights (the pads of the substrate corresponding to the sheet 52 can be the same height, which can improve the feeling of bad joints between the pads 5 11 and the bumps 52 1 near the right half of the wafer 52). .
O:\90\90814.DOC 1245945 此外，在其他應用中，基板上之接墊的高度係由該基板 覆晶區外圍向該基板覆晶區中央遞減或遞增。或是晶片上 之凸塊的高度係由該晶片覆晶區外圍向該晶片覆晶區中央 遞增或遞減’以同樣達到解決本發明接蟄與凸塊可能接合 不良的問題。 兹以下列較佳實例予以詳細說明在基板上形成不同高度 接墊之方法。 參考圖8，顯示本發明中基板上相鄰不同高度之接墊的剖 面示意圖。圖中之第一接墊61及第二接墊62係位於一玻璃 層63上，且其皆具有一第一金屬層64 ' 一第一保護層65、 一第二保護層66及一導電層（例如一 ^(^層）67。所不同的 是，該第一接墊61内該第一保護層65及該第二保護層66間 加設一半導體層68。因此該第一接墊61之高度即高於該第 二接塾62。其中該第一金屬層64之厚度約為2250〜4400 A， 該第一保護層65之厚度約為3300〜3700A，該第二保護層66 之厚度約為3300〜3700A，該ITO層67之厚度約為 500〜700A，該半導體層68之厚度約為1200〜1500A。 參考圖9 ’頭示本發明第四實施例液晶顯示裝置之側視示 意圖。在本實施中，該液晶顯示裝置70包括一基板71及一 晶片72 ’該基板7 1具有複數個接墊711，該晶片72具有複數 個凸塊7 2 1。 圖10係圖9之局部放大示意圖，由圖中可看出該接墊711 與遠凸塊7 2 1係相對應且接觸而形成一接觸區域7 3，其特徵 在於該接觸區域73本身具有不同之水平高度。形成此特徵 O:\90\90814.DOC -9- 1245945 之方式可以為該接墊711本身具有不同高度或是該凸塊72 i 本身具有不同咼度。以本圖所示之接墊7 11為例，其在接觸 區域73靠外圍邵分（圖中右側）較低，而對應之該凸塊72丨在 接觸區域73靠外圍部分較高，然而在其他應用中，也可以 是泫接墊7 11在接觸區域7 3靠外圍部分較高，而對應之該凸 塊72 1在接觸區域73靠外圍部分較低。可以理解的是，本身 具不同咼度之接墊所對應之凸塊可以是本身皆具同一高 度，或是本身具不同高度之凸塊所對應之接墊可以是本身 皆具同一高度。較佳的情況是，該接墊711或是凸塊72丨本 身較高部分位於接觸區域73靠外圍部分。此外，以本圖所 示之接墊711為例，該接墊711具有不連續之不同高度，而 形成一階梯狀外觀。而在其他應用中，該接墊具有連續之 不同南度’而形成一上表面傾斜之類梯形外觀。同樣地， 該凸塊也可以為與接墊形狀互補的階梯狀外觀或是類梯形 外觀。 兹以下列實例予以詳細說明使接墊本身形成不同高度之 方法，惟並不意味該方法僅侷限於此實施例所揭示之内容。 接墊實例一 圖11係圖10接墊實例一之剖面結構示意圖。本實施例之 接塾81係位於一玻璃層811上，其由下往上依序具有一第一 金屬層812、一第一保護層8丨3、一第二金屬層814、一第二 保護層8 1 5及一導電層（例如一 IT〇層）8丨6。其中該第二金屬 層8 14之I度小於該第一金屬層g 12，因此使得該接塾$ 1本 身形成左南右低之外形。其中該第一金屬層812之厚度約為 O:\90\90814.DOC -10- 1245945 225 0〜4400人，該第一保護層813之厚度約為3300〜3700人， 該第二金屬層814之厚度約為2360〜289〇A，該第二保護層 815之厚度約為3300〜3700A，該ITO層816之厚度約為 500〜700人。 接墊實例二 圖12係圖10中接墊之實例二之剖面結構示意圖。本實施 例之接墊82係位於一玻璃層82 1上，其由下往上依序具有一 第一金屬層822、一第一保護層823、一半導體層824、一策 二保護層825及一導電層（例如一 1丁〇層）826。其中該半導體 層824之寬度小於該第一金屬層822，因此使得該接墊82本 身形成左高右低之外形。其中該第一金屬層822之厚度約為 225 0〜4400A，該第一保護層823之厚度約為3300〜3700A， 該半導體層824之厚度約為1200〜1500人，該第二保護層825 之厚度約為3300〜3700A，該ITO層826之厚度約為 500〜700人。 接墊實例三 參考圖1 3，顯示圖10中接墊之實例三之剖面結構示意 圖。本實施例之接墊83係位於一玻璃層831上，其由下往上 依序具有一第一保護層833、一半導體層834、一第二保護 層835及一導電層（例如一 ITO層）836。本實例與實例二之不 同處僅為本實例少了該第一金屬層822，其餘則皆相同。 接墊實例四 參考圖14，顯示圖10中接墊之實例四之剖面結構示意 圖。本實施例之接墊84係位於一玻璃層841上，其由下往上 O:\90\90814.DOC -11 - 1245945 依序具有一第—保護層843、一半導體層844、一第—i简 層845 一第二保護層846及一導電層（例如一 IT〇層）847。 本貝例與貫例三之不同處僅為本實例於半導體層料^上加 '又咸第二金屬層845，其餘則皆相同。 立參考圖15,顯示本發明中熱壓頭之較佳實施例之剖面示 意圖，該熱壓頭90係用以將一晶片壓合於一基板上，該熱 疋^ 9〇與孩晶片接觸之表面具有至少一突出部分，以增加 :曰片一侧之她力。在本實施例中，該熱壓頭90與該曰曰片 ㈣之表面之二侧分別具有一突出部分Μ，”，以增力:對 晶片二側之施力，使在晶片二侧之接合狀況與在晶片中央 區域相同。名太余、A y ,丄 本見她例中，該熱壓頭係形成一類门外形， :在其他應用中，該熱壓頭可以是其他外形 塾與凸境間接合不氣的地方，突出該熱壓頭之表面以增 :即可。值得注意的是，本發明的另-實_亦可在晶 面的外时1出部分，以使該熱壓頭與該晶片接觸之表 面《二側分別由— 又表 力，使在θ e 大出4刀加壓，以增加對晶片二側之施 上、；二側之接合狀況與在晶片中央區域相同。 本二 為說明本發明之原理及其功效，並非限制 本發明。®此^騎術之人 1非限制 變化仍不脫本發明之Μ * U貝她例進行修改及 申請專利範園發明之權利範圍應如後述之 【圖式簡單說明】 圖1顯示習用洁曰駐一 圖2顯示習用液日於覆晶破璃製程之示意圖； 曰^裝置中接塾與凸塊間接合狀況之O: \ 90 \ 90814.DOC 1245945 In addition, in other applications, the height of the pads on the substrate decreases or increases from the periphery of the substrate's crystalline region to the center of the substrate's crystalline region. Or the height of the bumps on the wafer is increased or decreased from the periphery of the wafer cladding region to the center of the wafer cladding region 'in order to also solve the problem that the joints and bumps of the present invention may have poor joints. The following preferred examples are used to describe in detail the method of forming pads of different heights on the substrate. Referring to FIG. 8, there is shown a schematic cross-sectional view of adjacent pads of different heights on a substrate in the present invention. The first pad 61 and the second pad 62 are located on a glass layer 63, and each of them has a first metal layer 64 ', a first protective layer 65, a second protective layer 66, and a conductive layer. (For example, a ^ (^ layer) 67. The difference is that a semiconductor layer 68 is added between the first protective layer 65 and the second protective layer 66 in the first pad 61. Therefore, the first pad 61 The height is higher than the second junction 62. The thickness of the first metal layer 64 is about 2250 ~ 4400 A, the thickness of the first protection layer 65 is about 3300 ~ 3700A, and the thickness of the second protection layer 66 The thickness of the ITO layer 67 is about 3300 ~ 3700A, the thickness of the ITO layer 67 is about 500 ~ 700A, and the thickness of the semiconductor layer 68 is about 1200 ~ 1500A. Referring to FIG. 9 ', a schematic side view of a liquid crystal display device according to a fourth embodiment of the present invention is shown. In this embodiment, the liquid crystal display device 70 includes a substrate 71 and a wafer 72 '. The substrate 71 has a plurality of pads 711, and the wafer 72 has a plurality of bumps 7 2 1. Fig. 10 is a partial enlargement of Fig. 9 It can be seen from the figure that the pad 711 corresponds to the far bump 7 2 1 and contacts to form a contact area 7 3. The characteristic is that the contact area 73 itself has different horizontal heights. The way to form this feature O: \ 90 \ 90814.DOC -9-1245945 can be that the pad 711 itself has a different height or the bump 72 i itself has a different height. Take the pad 7 11 shown in this figure as an example, it is lower in the contact area 73 near the periphery (right side in the figure), while the corresponding bump 72 丨 is higher in the contact area 73 near the periphery. However, in other applications, it is also possible that the pads 7 11 are higher in the peripheral portion of the contact area 73, and the corresponding bumps 72 1 are lower in the peripheral portion of the contact area 73. It can be understood that The bumps corresponding to the pads with different degrees may be the same height themselves, or the pads corresponding to the bumps having different heights may be the same height themselves. Preferably, the contact pads have the same height. The higher part of the pad 711 or the bump 72 丨 itself is located in the outer part of the contact area 73. In addition, taking the pad 711 shown in this figure as an example, the pad 711 has discontinuous different heights and forms a stepped shape. Appearance. In other applications, this pad There are continuous different south degrees' to form a trapezoidal appearance such as an inclined upper surface. Similarly, the bump can also have a stepped appearance or a trapezoidal appearance that is complementary to the shape of the pad. The following examples are used to explain in detail The method of forming the pads with different heights does not mean that the method is limited to what is disclosed in this embodiment. Fig. 11 of the pad example 1 is a schematic cross-sectional structure diagram of the example of the pad 1 of Fig. 10. The connection of this embodiment 81 is located on a glass layer 811, which has a first metal layer 812, a first protective layer 8 丨 3, a second metal layer 814, a second protective layer 8 1 5 and a The conductive layer (for example, an IT0 layer) 8 丨 6. The second metal layer 8 14 has a degree of I less than the first metal layer g 12, so that the connection $ 1 itself forms a shape of left south right low. The thickness of the first metal layer 812 is about O: \ 90 \ 90814.DOC -10- 1245945 225 0 ~ 4400 people, the thickness of the first protective layer 813 is about 3300 ~ 3700 people, and the second metal layer 814 The thickness of the second protective layer 815 is about 2360 ~ 289 ° A, the thickness of the second protective layer 815 is about 3300 ~ 3700A, and the thickness of the ITO layer 816 is about 500 ~ 700 people. Example Pad 2 FIG. 12 is a schematic cross-sectional structure diagram of Example 2 of the pad in FIG. 10. The pad 82 of this embodiment is located on a glass layer 821, which has a first metal layer 822, a first protective layer 823, a semiconductor layer 824, a second protective layer 825, and A conductive layer (for example, a 1-but0 layer) 826. The width of the semiconductor layer 824 is smaller than the width of the first metal layer 822, so that the pad 82 itself has a shape of high left and right low. The thickness of the first metal layer 822 is about 225 to 4400A, the thickness of the first protection layer 823 is about 3300 to 3700A, the thickness of the semiconductor layer 824 is about 1200 to 1500, and the thickness of the second protection layer 825 The thickness is about 3300 ~ 3700A, and the thickness of the ITO layer 826 is about 500 ~ 700 people. Example 3 of the pad Referring to FIG. 13, a schematic cross-sectional structure of the example 3 of the pad shown in FIG. 10 is shown. The pad 83 of this embodiment is located on a glass layer 831, which has a first protective layer 833, a semiconductor layer 834, a second protective layer 835, and a conductive layer (such as an ITO layer) in this order from bottom to top. ) 836. The difference between this example and the second example is that the first metal layer 822 is omitted in this example, and the rest are the same. Pad Example 4 Referring to FIG. 14, a schematic cross-sectional structure of a pad example 4 in FIG. 10 is shown. The pad 84 of this embodiment is located on a glass layer 841, and it has a first-protective layer 843, a semiconductor layer 844, and a first- The i-layer 845 includes a second protective layer 846 and a conductive layer (eg, an IT0 layer) 847. The difference between this example and the third example is only that this example adds the second metal layer 845 to the semiconductor layer, and the rest are the same. Referring to FIG. 15, a schematic cross-sectional view of a preferred embodiment of a thermal indenter in the present invention is shown. The thermal indenter 90 is used to press a wafer onto a substrate. The surface has at least one protruding portion to increase: the force on one side of the tablet. In this embodiment, the thermal head 90 has a protruding portion M on each of the two sides of the surface of the wafer, "" to increase the force: the force is applied to the two sides of the wafer, so that the two sides of the wafer are joined. The condition is the same as in the central area of the wafer. The name is Taiyu, A y. In her case, the thermal head forms a type of door shape. In other applications, the thermal head can be other shapes. Where the air is not bonded, the surface of the thermal head is highlighted to increase: it is worth noting that the other aspect of the present invention can also be a part when the crystal face is outside, so that the thermal head The surfaces in contact with the wafer "are on both sides by-and force, so that 4 blades of pressure at θ e are increased to increase the pressure on the two sides of the wafer; the bonding conditions on the two sides are the same as in the central area of the wafer. This two is to explain the principle of the present invention and its effects, but not to limit the present invention. ® This ^ riding person 1 is not limited to change without deviating from the M * U of the present invention to modify and apply for patent right The range should be as described later. [Schematic description] Figure 1 Day with liquid schematic of a flip-chip process in broken glass; ^ means connected to said bump Sook indirect engagement condition of
O:\90\90814.DOC -12- 1245945 '意圖， 圖3顯示本發明第一實施例液晶顯示裝置中基板之俯視 示意圖； 圖4顯示本發明第一實施例液晶顯示裝置中晶片之俯視 示意圖； 圖5顯示本發明第一實施例液晶顯示裝置之侧視示意圖； 圖6顯示本發明第二實施例液晶顯示裝置之側視示意圖； 圖7顯示本發明第三實施例液晶顯示裝置之側視示意圖； 圖8顯示本發明中基板上相鄰不同高度之接墊之剖面示 意圖； 圖9顯示本發明第四實施例液晶顯示裝置之側視示意圖； 圖10顯示圖9之局部放大示意圖； 圖11顯示圖1 0中接墊之實例一之剖面結構示意圖； 圖12顯示圖10中接墊之實例二之剖面結構示意圖； 圖13顯示圖10中接墊之實例三之剖面結構示意圖； 圖14顯示圖10中接墊之實例四之剖面結構示意圖；及 圖15顯示本發明中熱壓頭之較佳實施例之剖面示意圖。 【圖式元件符號說明】 10 習用液晶顯示裝置 30 液晶顯示裝置 11 基板 31 基板 111 接墊 311 接墊 12 晶片 312 基板覆晶區 121 凸塊 313 接墊 20 熱壓頭 32 晶片 O:\90\90814.DOC -13 - 凸塊 71 基板 晶片覆晶區 711 接墊 凸塊 72 晶片 液晶顯不裝置 721 凸塊 基板 73 接觸區域 接墊 81 接墊 晶片 811 玻璃層 凸塊 812 第一金屬層 液晶顯不裝置 813 第一保護層 基板 814 第二金屬層 接墊 815 第二保護層 接墊 816 導電層 晶片 82 接墊 凸塊 821 玻璃層 凸塊 822 第一金屬層 第一接墊 823 第一保護層 第二接墊 824 半導體層 玻璃層 825 第二保護層 第一金屬層 826 導電層 第一保護層 83 接墊 第二保護層 831 玻璃層 導電層 833 第一保護層 半導體層 834 半導體層 液晶顯示裝置 835 第二保護層 -14- 1245945 836 導電層 845 第二金屬層 84 接墊 846 第二保護層 841 玻璃層 847 導電層 843 第一保護層 90 熱壓頭 844 半導體層 91,92 突出部分 O:\90\90814.DOC - 15 -O: \ 90 \ 90814.DOC -12- 1245945 'Intentionally, FIG. 3 shows a schematic plan view of a substrate in a liquid crystal display device according to a first embodiment of the present invention; FIG. 4 shows a schematic plan view of a wafer in a liquid crystal display device according to a first embodiment of the present invention Figure 5 shows a schematic side view of a liquid crystal display device according to a first embodiment of the present invention; Figure 6 shows a schematic side view of a liquid crystal display device according to a second embodiment of the present invention; Figure 7 shows a side view of a liquid crystal display device according to a third embodiment of the present invention 8 is a schematic cross-sectional view of pads of different heights adjacent to each other on a substrate in the present invention; FIG. 9 is a schematic side view of a liquid crystal display device according to a fourth embodiment of the present invention; FIG. 10 is a partially enlarged schematic view of FIG. 9; FIG. 10 shows a schematic cross-sectional structure of the first example of the pad in FIG. 10; FIG. 12 shows a schematic cross-sectional structure of the example 2 of the pad in FIG. 10; FIG. 13 shows a schematic cross-sectional structure of the example 3 of the pad in FIG. FIG. 10 is a schematic cross-sectional structure diagram of Example 4 of a pad; and FIG. 15 is a schematic cross-sectional diagram of a preferred embodiment of a thermal head in the present invention. [Illustration of symbols of graphic elements] 10 Conventional liquid crystal display device 30 Liquid crystal display device 11 substrate 31 substrate 111 pad 311 pad 12 wafer 312 substrate wafer region 121 bump 313 pad 20 thermal head 32 wafer O: \ 90 \ 90814.DOC -13-Bump 71 Substrate wafer cladding region 711 Pad bump 72 Wafer LCD display device 721 Bump substrate 73 Contact area pad 81 Pad wafer 811 Glass layer bump 812 First metal layer liquid crystal display No device 813 First protective layer substrate 814 Second metal layer pad 815 Second protective layer pad 816 Conductive layer wafer 82 Pad bump 821 Glass layer bump 822 First metal layer First pad 823 First protection layer Second pad 824, semiconductor layer, glass layer 825, second protective layer, first metal layer 826, conductive layer, first protective layer 83, pad second protection layer, 831, glass layer, conductive layer 833, first protective layer, semiconductor layer 834, semiconductor layer, liquid crystal display device 835 second protective layer-14-1245945 836 conductive layer 845 second metal layer 84 pad 846 second protective layer 841 glass layer 847 conductive layer 843 first The protective layer 844 of the semiconductor layer 90 of the thermal head 91, the projecting portion O: \ 90 \ 90814.DOC - 15 -