1245322 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種基板清洗系統與方法，尤指一種適 用於含有奈米級結構之基板清洗系統與方法。 【先前技術】 超臨界流體物理性質介於氣、液相之間，黏度接近於 氣體’选度接近於液體’因密度雨’可輸送較氣體更多的 超臨界流體’因黏度低，輸送時所須的功率則較液體為低， 10亦即質量傳遞阻力遠較液體為小，因之在質量傳遞上較液 體為快，此外’超臨界流體有如氣體幾無表面張力，因此 很谷易滲入到多孔性組織中；除物理性質外，在化學性質 上亦與氣、液態時有所不同，例如，二氧化碳在氣體狀態 下不具卒取Sb力’但當進入超臨界狀態後，二氧化碳變成 15親有機性，因而具有溶解有機物的能力，此溶解能力會隨 溫度及壓力而有所不同。 20 傳統之晶圓清洗製程，需使用超純水與化學溶劑， 除晶圓表面各種奈米微小顆粒，同時產生大量廢水與廢 劑；加上晶圓製程即將邁向6511111，使現有之濕式清洗 術’因為晶圓之渠溝與高深寬比結構，與液體表面邊界 之限制，而無法克服65nm線寬之表面張力，無法有效 奈米孔洞污染物。 / 之1245322 IX. Description of the invention: [Technical field to which the invention belongs] The present invention relates to a substrate cleaning system and method, and more particularly to a substrate cleaning system and method containing a nano-level structure. [Previous technology] The physical properties of supercritical fluids are between gas and liquid phases, and the viscosity is close to that of gas. The selectivity is close to that of liquid. Because of density rain, it can transport more supercritical fluids than gas. The required power is lower than that of liquid, which means that the mass transfer resistance is much smaller than that of liquid, so it is faster in mass transfer than liquid. In addition, 'supercritical fluid has almost no surface tension like gas, so it is easy to penetrate. Into porous tissue; in addition to physical properties, it is also different from gas and liquid in chemical properties. For example, carbon dioxide does not have Sb force in a gas state. But when it enters a supercritical state, carbon dioxide becomes 15 Organic, so it has the ability to dissolve organic matter. This dissolution ability will vary with temperature and pressure. 20 The traditional wafer cleaning process requires ultra-pure water and chemical solvents to remove all kinds of nano particles on the wafer surface and generate a large amount of waste water and waste agents. In addition, the wafer process is about to move to 6511111, making the existing wet type The cleaning technique 'cannot be overcome by the surface tension of 65nm line width due to the limitations of the wafer trench and the high aspect ratio structure and the boundary of the liquid surface. / Of
人W E品介狀怨為非極性，因此搭酉丨 共〉谷劑或界面活性南丨 你兔止 — 庄d 作為光阻劑與超臨界流楚 5 1245322 介，形成微胞，將更能發揮清洗之效果；同時，研究發現 才木作條件控制於穩悲均勻相中，可以增加清洗效果；如果 共溶劑添加量超過操作範圍外，則會由原來之均相轉變至 非均相，使超臨界流體清洗效果降低；所以，建立清=配 5方，提供適當操作條件，可增加清洗效率並縮短清洗" 時間。 於先鈾技術中關於污染物檢測分析部份，包括有利用 石英日日體彳政里天枰糸統測量該樣本流束内存在之非氣體 污染物之量的改變，該系統可使用於監測超臨界流體之清 洗與萃取程序；然而並未提及其他非使用石英晶體微量天 1〇 枰系統測量清洗效率之方式。 在關於增加超音波與喷嘴裝置增加清洗部份，相關技 術係在清洗槽内配設數支預洗用喷嘴與壓縮液體膨脹用之 低壓室和聲波產生裝置，以及利用旋轉翼之強制攪拌裝 置，以達成會產生發泡之強力洗淨效果；然而此裝置必須 15利用聲波產生裝置與旋轉翼之強制攪拌才能達成清潔效 果，實為不便。 因此，開發乾式清洗製程，且減少水資源浪費與化學 溶劑使用，將符合極具潛力之「綠色清潔生產技術」、之條 件，而利用超臨界二氧化碳來去除奈米污染物，並藉以開 20务簡單叙置之基板清洗糸統’將可以克服上述問題。 【發明内容】 本發明之基板清洗方法與系統，係利用超臨界二氧化 碳具低表面張力、低黏度、高擴散性，易擴散至奈米孔洞 25中的特性，再搭配共溶劑與微乳化等創新技術，同時以超 1245322 音波增加清洗效果，即可提高基板上物質，如光阻劑等的 π洗效率並縮短清洗時間，而搭配光纖探頭偵測器更可即 時於線上監測清洗效率。 一氧化故於超臨界狀態為非極性，利用適當之共溶 5劑、界面活性劑及螯合劑等，增加二氧化碳的極性，可作 為光阻劑與超臨界流體之媒介，再配合微乳化技術，可能 針對半導體（晶圓、low_k材料、MEMS微機電系統）等不同 製程之光阻劑、金屬顆粒使其可達到清洗之效果，是極為 重要的。 ίο 本务明之基板清洗系統包括··一具有承載一基板之一 本發明更包括一種基板清洗方法， 提供一基板於含有複數個超音波噴嘴之 (b)提供一 ，包括步驟如下：（a) 之一密閉清洗室中；Human WE products are non-polar, so they will be combined 丨 co> grain or interfacial activity 丨 you rabbit only — Zhuang d as a photoresist and supercritical fluid 5 1245322 mediation, forming microcells, will be more effective The effect of cleaning; at the same time, it was found that controlling the conditions of the wood in a stable and homogeneous phase can increase the cleaning effect; if the amount of co-solvent added exceeds the operating range, it will change from the original homogeneous phase to the heterogeneous phase, making the super The cleaning effect of the critical fluid is reduced; therefore, the establishment of cleaning = 5 squares, providing appropriate operating conditions, can increase the cleaning efficiency and shorten the cleaning time. The pollutant detection and analysis part of the prior uranium technology includes the measurement of changes in the amount of non-gaseous pollutants in the sample stream using the quartz sun-solar system. The system can be used for monitoring. Cleaning and extraction procedures for supercritical fluids; however, there is no mention of other ways to measure the cleaning efficiency without using a quartz crystal micro-day 10 枰 system. In terms of adding ultrasonic and nozzle devices to increase cleaning, the related technology is to arrange several pre-wash nozzles and low-pressure chambers and sonic generators for the expansion of compressed liquid in the cleaning tank, as well as forced stirring devices using rotating wings. In order to achieve a strong cleaning effect that will cause foaming; however, this device must be forced to stir using a sonic generator and a rotating wing to achieve a cleaning effect, which is inconvenient. Therefore, the development of a dry cleaning process, and the reduction of waste of water resources and the use of chemical solvents, will meet the conditions of the "green clean production technology" with great potential, and the use of supercritical carbon dioxide to remove nano-scale pollutants, and open up 20 services. A simple description of the substrate cleaning system will overcome the above problems. [Summary of the invention] The substrate cleaning method and system of the present invention are based on the characteristics of supercritical carbon dioxide with low surface tension, low viscosity, high diffusivity, and easy diffusion into the nano-pores 25, together with innovations such as co-solvents and microemulsification. Technology, while increasing the cleaning effect with super 1245322 sound waves, it can improve the π cleaning efficiency of substrates, such as photoresist, and shorten the cleaning time. With the fiber optic probe detector, the cleaning efficiency can be monitored online in real time. Oxidation is non-polar in the supercritical state. Using appropriate co-solvents, surfactants, and chelating agents to increase the polarity of carbon dioxide can be used as a medium for photoresist and supercritical fluids, and in combination with micro-emulsification technology, It may be very important to use photoresist and metal particles for different processes such as semiconductors (wafers, low-k materials, MEMS). ίο The substrate cleaning system of the present invention includes a one having a substrate, and the present invention further includes a substrate cleaning method, providing a substrate in (b) containing a plurality of ultrasonic nozzles, and providing one, including the following steps: (a) One in a closed cleaning room;
旋^載體，與複數個超音波喷嘴之密閉清洗室；一洗液供 應裝置；一二氧化碳液體儲存裝置；一壓力控制裝置丨一 溫度控制裝置；以及一線上監測裝置；其中，洗液供應裝 置係供應-界面活性劑，並以一接管與二氧化碳液體儲存 15裝置相連，二氧化碳液體儲存裝置係以一連接管與壓力控 制裝置相接’壓力控制裝置以一連通管與溫度控制裝置相 接，再以一通管將溫度控制裝置與密閉清洗室連接，將來 自^液供應裝置，以及二氧化碳液體儲存裝置之-超臨界 狀態二氧化碳混合液體，藉由通管送入密閉清洗室中，並 20利用複數個超音波喷嘴’將混合液體嘴送於基板上；且， 線上監測裝置係以一取樣管與密閉清洗室相連。 1245322 Γί 嘴噴送至基板之表面進行接觸清洗，同時產 生一廢液；⑷以一監測裝置進行該廢液成分之分析。 5 10 15 適1利用本發明系統與方法進行清洗之基板可以是任 基板’由於本發明系統與方法可深入奈米級間 距進❹洗’因此較㈣適用於—具有奈米級結構之基板。 ”於本發明系統與方法中，塵力控制裝置之種類可以是 白用之任何-種，較佳係一塵力果浦；而系統中廢力控制 裝置以及溫度控制裝置，係用以使一液態二氧化破經由塵 力與溫度之控制而變成—超臨界狀態，—般使液態二氧化 碳變成一超臨界狀態之條件為，溫度高於31.rc，且麼力 南於73atmm兄下；而為使二氧化碳之超臨界狀態持續保 持至清洗進行時，因此密閉清洗室之溫度範圍較佳係保持 在25〜200t：，且壓力範圍保持在74〜25〇atm。 本發明系統中喷嘴係連接一超音波裝置，以利用超音 波將超臨界二氧化碳嘴送至欲清洗之基板，配合系統中旋 轉載體’有效率的進行基板上奈米級結構之清洗，而超音 波之操作頻率範圍較佳為〇 8MHz〜3 5 ;且為完整清洗 基板，本發明系統之密閉清洗室内的複數個超音波噴嘴， 可以a又置在旋轉載體之上方與下方，同時以聚焦型式之超 音波線型喷嘴進行清洗工作，並可有一個或多個線型噴嘴 同時進行清洗工作，以充分將旋轉載體上之基板上下表面 清洗乾淨；除了洗液供應裝置所提供之界面活性劑之外， 本發明系統中洗液供應裝置更可提供一共溶劑或一螯合 劑，混合於一超臨界二氧化碳中，以利用洗劑間產生之微 20 1245322 乳化現象增加奈米級間距内之清洗效果。 本發明中監測裝置係以一取樣管與密閉清洗室連接， 以線上即日寸監測或分析來自密閉清洗室之清洗廢液，監測 裝置較佳係一内部光纖探頭偵測器，連接uv/vis光譜儀或 5内視光纖CCD與電腦控制系統，以配合清洗槽的操作溫度 與壓力變化，進行化工熱力學與動力學的計算，做連線的 清洗效率監測，污染物含量與清洗品質之管理。 此外，為讓旋轉載體能確實帶動待清洗基板，可於旋 轉載體與待清洗基板之接合處，施以表面處理，以增加接 ίο 合部位與待清洗基板間的摩擦力。 於本發明方法中，步驟（a)之該基板較佳係先經一液態 二氧化碳潤濕過，以增加超臨界二氧化碳分佈於欲清洗基 板表面之均勻程度；步驟（b)中之複數個超音波喷嘴係將該 超臨界二氧化碳混合物噴送至基板之一側或二側，以充分 15洗淨基板之上下表面；且，超音波喷嘴可以是固定式或活 動式’藉以無死角的充分喷送超臨界二氧化碳混合物於基 板上。 【實施方式】 貫施例1 本實施例說明利用本發明基板清洗系統裝置，請參考 圖1裝置系統圖。 圖1中分別有一密閉清洗室10 ; —洗液供應裝置80 ; 一二氧化碳液體儲存裝置20 ; —壓力控制裝置（輸送 1245322 泵）21，一溫度控制裝置3〇;以及一線上監測裝置6〇;其中， 洗液供應裝置80係供應一界面活性劑，二氧化碳液體儲存 I置20係以一連接管22與壓力控制裝置21相接，壓力控制 裝置21與溫度控制裝置3〇相接，再以一通管31將溫度控制 5裝置30與密閉清洗室10連接，將來自二氧化碳液體儲存裝 置20之一超臨界狀態二氧化碳混合液體送入密閉清洗室⑺ 中，並利用密閉清洗室1〇中複數個超音波喷嘴12，將混合 液體喷迗於基板70上；此外，線上監測裝置6〇係以一取樣 官61與密閉清洗室1〇相連，於本實施例中，線上監測裝置 10 60a為一光源，線上監測裝置6〇b為一光譜儀。 讼閉清洗室10内部有一旋轉載體丨3以及複數個超音 波喷嘴12，其中該旋轉載體13係可承載基板7〇，並以旋轉 之方式承接來自複數個超音波噴嘴12噴送出之混合液體， 進行基板70之清洗，在其他較佳之實施例中，複數個超音 15波噴嘴可設置於密閉清洗室1〇内旋轉載體13之上方與下 方’以更均勻的清洗基板70。 實施例2 利用貫施例1之裝置，說明本發明基板清洗系統之作 動方式。 20 首先放置一基板7〇(如一晶圓）置入密閉清洗室10中， 接著利用輸送泵21將來自液相二氧化碳儲槽2〇之液體二氧 化碳一起加壓至壓力73atm以上，再經過加熱器3〇將二氧化 碳加熱至臨界溫度31.rC以上，使混合液體内液體二氧化 奴達到超臨界狀態，再將混合液體送入密閉清洗室丨〇中， 1245322 此時連同與來自洗液供應裝置80之界 一數人^ 介由，舌性劑，共溶劑或 整曰刮所形成之一混合液體，利用數條 + 1木知音波振動器盥 活動式賀嘴12將混合液體喷送至基板7〇# ” ^ ^ , 攸/U表面，利用混合液 體中超臨界二氧化碳的低表面張力 久呵今透性，來清洗 5基板7〇上奈米孔徑間之污染物。 +密閉清洗室Η)中，可利用數條超音波振動器與活動式 贺嘴12，配合旋轉載體13進行旋轉動作，將基板兀均勻、、主 洗；旋轉載體！3可與水平面呈一傾斜角度，當進行超音I 清洗時，被清除之汙物可經由此一傾斜角度，有規律的流 10出基板表面，同時減少清洗的死角，增加清洗效果；且利 用超音波喷嘴產生之流動更可有效縮短清洗時間；此外， 旋轉載體13之上方與下方同時以聚焦型式之多個超音波線 型喷嘴12進行清洗工作。 接著由始、閉清洗室1 〇排出清洗廢液，經取樣管61取樣 15至一線上監測系統60，利用在超臨界流體高壓狀況下，内 部光纖探頭偵測器連接UV/VIS光譜儀或内視光纖〇(：：1)與 電腦控制系統，配合密閉清洗室1〇的操作溫度與壓力變 化，進行化工熱力學與動力學的計算，做即時分析與監測 液態二氧化碳廢液中之污染物含量與清洗之品質管理。 20 實施例3 在元成基板之清洗後，於高溫高壓之密閉清洗室内， 含有污染物的超臨界二氧化碳，在經由減壓閥丨丨降壓後， 進入分離槽40 ’此時較重的污染物會沉澱於分離槽4〇底 部’污染物經分離槽4〇内之吸附過濾器（圖未示）收集後， 11 1245322 再經適當的處理或利用超臨界水氧化系統處理；而經過過 濾的一氧化碳經過冷凝器50或壓縮成液體，可進入二氧化 碳儲槽20回收再使用，或直接排放至大氣中。 本系統操作溫度範圍在25〜2〇〇，操作壓力為 5 74〜250atm ;超音波系統之操作頻率範圍為〇.8ΜΗζ〜3·5 MHz，始閉清洗室丨〇内部更可包括含一光纖探頭偵測器之 高壓反應測試模組，連接UV/VIS光譜儀與電腦，溫度控制 在25〜100C下，以固定二氧化碳超臨界流體之質量，在不 同[力麦化¥之相對應可見光5〇〇nm波長之穿透強度變 _ 10化，觀察到二氧化碳超臨界流體體積變容壓縮之壓力從 850psi至17GGpsi升高，可見㈣透強度數值逐漸增大趨近 飽和平衡。 發展本技術不但可提升產業的競爭力，亦可促成產業 升級，建立技術平台，本發明主要係利用界面活性劑或其A carrier and a sealed cleaning room with a plurality of ultrasonic nozzles; a washing liquid supply device; a carbon dioxide liquid storage device; a pressure control device; a temperature control device; and an online monitoring device; wherein the washing liquid supply device is Supply-Surface active agent, and connected to a carbon dioxide liquid storage device 15 by a pipe. The carbon dioxide liquid storage device is connected to a pressure control device by a connection tube. The pressure control device is connected to a temperature control device by a communication tube, and then connected by a The tube connects the temperature control device to the closed cleaning room, and sends the supercritical carbon dioxide mixed liquid from the liquid supply device and the carbon dioxide liquid storage device into the closed cleaning room through the through tube, and 20 uses a plurality of ultrasonic waves The nozzle 'sends the mixed liquid nozzle onto the substrate; and the on-line monitoring device is connected to the closed cleaning chamber with a sampling tube. 1245322 Γί The nozzle is sprayed onto the surface of the substrate for contact cleaning, and a waste liquid is generated at the same time; the component of the waste liquid is analyzed by a monitoring device. 5 10 15 Suitable 1 The substrate to be cleaned by the system and method of the present invention may be any substrate. Since the system and method of the present invention can penetrate into the nano-level space and be cleaned, it is more suitable for a substrate with a nano-level structure. "In the system and method of the present invention, the type of the dust control device can be any one of the type used, preferably a dust power guopu; and the waste power control device and temperature control device in the system are used to make a Liquid dioxide is broken into a supercritical state through the control of dust force and temperature. Generally, the conditions for making liquid carbon dioxide into a supercritical state are that the temperature is higher than 31.rc, and the melamine is under 73atmm; and The supercritical state of carbon dioxide is continuously maintained until the cleaning is performed, so the temperature range of the closed cleaning room is preferably maintained at 25 ~ 200t :, and the pressure range is maintained at 74 ~ 25〇atm. In the system of the present invention, the nozzle is connected to a super Sonic device to send supercritical carbon dioxide nozzle to the substrate to be cleaned by using ultrasonic waves, and cooperate with the rotating carrier in the system to efficiently clean the nano-scale structure on the substrate, and the operating frequency range of the ultrasonic wave is preferably 0.8 MHz ~ 3 5; and for the complete cleaning of the substrate, a plurality of ultrasonic nozzles in the closed cleaning chamber of the system of the present invention can be placed above and below the rotating carrier, and simultaneously Focusing type ultrasonic linear nozzles are used for cleaning, and one or more linear nozzles can be used for cleaning at the same time to fully clean the upper and lower surfaces of the substrate on the rotating carrier; in addition to the surfactants provided by the washing liquid supply device, In addition, the lotion supply device in the system of the present invention can further provide a co-solvent or a chelating agent, which is mixed in a supercritical carbon dioxide, so as to increase the cleaning effect within the nanometer interval by utilizing the micro-emulsion phenomenon generated by the lotion. In the present invention, the monitoring device is connected to the closed cleaning room by a sampling tube, and the cleaning waste liquid from the closed cleaning room is monitored or analyzed on-line at the same time. The monitoring device is preferably an internal fiber optic probe detector connected to the UV / VIS spectrometer. Or 5 internal-view optical fiber CCD and computer control system, in accordance with the operating temperature and pressure changes of the cleaning tank, to perform chemical thermodynamics and dynamics calculations, to monitor the cleaning efficiency of the connection, to manage the content of pollutants and cleaning quality. In order for the rotating carrier to surely drive the substrate to be cleaned, Surface treatment is applied to the joint to increase the friction between the joint and the substrate to be cleaned. In the method of the present invention, the substrate in step (a) is preferably wetted with a liquid carbon dioxide first to increase The supercritical carbon dioxide is distributed uniformly on the surface of the substrate to be cleaned; the plurality of ultrasonic nozzles in step (b) spray the supercritical carbon dioxide mixture to one or both sides of the substrate to fully clean the substrate Surface; and the ultrasonic nozzle may be a fixed or movable type, so that the supercritical carbon dioxide mixture is fully sprayed onto the substrate without dead angles. [Embodiment] Example 1 This embodiment illustrates the use of the substrate cleaning system device of the present invention. Please refer to the device system diagram of Figure 1. In Figure 1, there is a closed cleaning chamber 10;-a washing liquid supply device 80; a carbon dioxide liquid storage device 20;-a pressure control device (transport 1245322 pump) 21, a temperature control device 30; And an on-line monitoring device 60; among them, the lotion supply device 80 supplies a surfactant, and the carbon dioxide liquid storage device 20 sets a series The tube 22 is connected to the pressure control device 21, the pressure control device 21 is connected to the temperature control device 30, and then the temperature control 5 device 30 is connected to the closed cleaning chamber 10 by a through pipe 31, and one of the carbon dioxide liquid storage devices 20 is connected. The supercritical carbon dioxide mixed liquid is sent into a closed cleaning chamber ⑺, and a plurality of ultrasonic nozzles 12 in the closed cleaning chamber 10 are used to spray the mixed liquid on the substrate 70. In addition, the online monitoring device 60 uses a sampling The officer 61 is connected to the closed cleaning room 10. In this embodiment, the online monitoring device 10 60a is a light source, and the online monitoring device 60 b is a spectrometer. Inside the cleaning room 10 is a rotating carrier 3 and a plurality of ultrasonic nozzles 12, wherein the rotating carrier 13 is capable of carrying the substrate 70 and rotatingly receives the mixed liquid sprayed from the plurality of ultrasonic nozzles 12, The substrate 70 is cleaned. In other preferred embodiments, a plurality of ultrasonic 15-wave nozzles may be disposed above and below the rotating carrier 13 in the closed cleaning chamber 10 to clean the substrate 70 more uniformly. Embodiment 2 The operation of the substrate cleaning system of the present invention will be described using the apparatus of Embodiment 1. 20 First place a substrate 70 (such as a wafer) into the closed cleaning chamber 10, and then use the transfer pump 21 to pressurize the liquid carbon dioxide from the liquid-phase carbon dioxide storage tank 20 to a pressure of more than 73atm, and then pass through the heater 3 〇The carbon dioxide is heated to a critical temperature above 31.rC, so that the liquid slave in the mixed liquid reaches a supercritical state, and then the mixed liquid is sent to a closed cleaning chamber. 〇 1245322 At this time together with the A few people in the world ^ The mixed liquid formed by a tongue, a co-solvent or a scraper is sprayed to the substrate 7 by using several + 1 wooden sonic vibrator toilet movable nozzles 12 # ”^ ^, You / U surface, using the low surface tension of supercritical carbon dioxide in the mixed liquid for a long time and the permeability to clean the contaminants between the nanopores on the 5 substrate 70. + Sealed cleaning chamber Η), can Using several ultrasonic vibrators and movable nozzles 12 in conjunction with the rotating carrier 13 to rotate the substrate, the substrate is uniformly and main-washed; the rotating carrier! 3 can be at an inclined angle to the horizontal plane. At this time, the removed dirt can regularly flow out of the substrate surface through this inclined angle, while reducing the dead angle of cleaning and increasing the cleaning effect; and the flow generated by the ultrasonic nozzle can effectively shorten the cleaning time; in addition, Above and below the rotating carrier 13, the cleaning operation is performed with a plurality of ultrasonic line nozzles 12 in a focused mode. Then, the cleaning waste liquid is discharged from the starting and closing cleaning chambers 10, and sampling is performed through the sampling tube 61 to the on-line monitoring system 60. Under the condition of high pressure of supercritical fluid, the internal fiber optic probe detector is connected to UV / VIS spectrometer or internal optic fiber 0 (:: 1) and computer control system to cooperate with the operating temperature and pressure change of the closed cleaning room 10 to carry out chemical engineering. Thermodynamic and kinetic calculations, real-time analysis and monitoring of the content of pollutants in the liquid carbon dioxide waste liquid and the quality management of cleaning. Example 3 After cleaning the substrate of Yuancheng, in a high-temperature and high-pressure sealed cleaning room, the pollutants are contained. After the pressure of the supercritical carbon dioxide is reduced through the pressure reducing valve 丨 丨, it enters the separation tank 40 'At this time, the heavy pollutants will sink. At the bottom of the separation tank 40, the pollutants are collected by an adsorption filter (not shown) in the separation tank 40, and then the 11 1245322 is treated properly or treated with a supercritical water oxidation system; and the filtered carbon monoxide is condensed The device 50 or compressed into a liquid can be recycled into the carbon dioxide storage tank 20 for reuse or directly discharged into the atmosphere. The operating temperature range of this system is 25 ~ 200, the operating pressure is 5 74 ~ 250atm; the operating frequency of the ultrasonic system The range is 0.8MΗζ ~ 3.5MHz. The cleaning room can be opened and closed. The inside can also include a high-pressure reaction test module containing a fiber optic probe detector, which is connected to the UV / VIS spectrometer and the computer. The temperature is controlled at 25 ~ 100C. In order to fix the mass of the supercritical fluid of carbon dioxide, the penetration intensity of the corresponding 500nm wavelength of visible light at different [Limaihua ¥] is changed. The volumetric volumetric compression pressure of the supercritical fluid is observed from 850psi to When 17GGpsi increases, it can be seen that the value of permeation strength gradually increases and approaches the saturation equilibrium. The development of this technology can not only enhance the competitiveness of the industry, but also promote the upgrading of the industry and establish a technology platform. The present invention mainly uses the surfactant or its
15他共溶劑，螯合劑等與超臨界狀態之二氧化碳混合時發Z 之微乳化現象’配合超音波’提高基板上污染物如光阻劑 之清洗效果，縮短基板清洗時間；同時，搭配光纖探頭偵 測器線上監測，可即時得知清洗效率，縮短檢測時間。、· 上述實施例僅係為了方便說明而舉例而已，本發 20主張之權利範圍自應以申請專利範圍所述為準， 於上述實施例。 故 【圖式簡單說明】 圖1係本發明一較佳實施例之裝置系統圖。 12 25 1245322 4k 【主要元件符號說明】 10密閉清洗室 13旋轉載體 21輸送泵 31通管 60b光譜儀15 Co-solvents, chelating agents, etc., when mixed with carbon dioxide in a supercritical state, give a micro-emulsification phenomenon of Z. 'Cooperate with ultrasound' to improve the cleaning effect of pollutants such as photoresist on the substrate and shorten the substrate cleaning time; meanwhile, it is equipped with a fiber optic probe Detector on-line monitoring can instantly know the cleaning efficiency and shorten the detection time. The above-mentioned embodiments are merely examples for the convenience of description. The scope of the rights claimed in this publication shall be based on the scope of the patent application. [Simplified description of the drawings] Fig. 1 is a system diagram of a device according to a preferred embodiment of the present invention. 12 25 1245322 4k [Description of main component symbols] 10 Closed cleaning room 13 Rotating carrier 21 Delivery pump 31 Through tube 60b Spectrometer
11減壓閥 12超音波喷嘴 20液相二氧化碳儲槽 22連接管 30溫度控制裝置 40分離槽 50冷凝器 60線上監測系統 60a光源 61取樣管 70基板 80洗液供應裝置11 Pressure reducing valve 12 Ultrasonic nozzle 20 Liquid carbon dioxide storage tank 22 Connection tube 30 Temperature control device 40 Separation tank 50 Condenser 60 On-line monitoring system 60a Light source 61 Sampling tube 70 Substrate 80 Washing liquid supply device
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