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TWI245379B - Semiconductor device and method for manufacturing same - Google Patents

Semiconductor device and method for manufacturing same Download PDF

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Publication number
TWI245379B
TWI245379B TW093114055A TW93114055A TWI245379B TW I245379 B TWI245379 B TW I245379B TW 093114055 A TW093114055 A TW 093114055A TW 93114055 A TW93114055 A TW 93114055A TW I245379 B TWI245379 B TW I245379B
Authority
TW
Taiwan
Prior art keywords
semiconductor device
manufacturing same
manufacturing
same
semiconductor
Prior art date
Application number
TW093114055A
Other languages
Chinese (zh)
Inventor
Yukihiro Takao
Original Assignee
Sanyo Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co filed Critical Sanyo Electric Co
Priority to TW093114055A priority Critical patent/TWI245379B/en
Application granted granted Critical
Publication of TWI245379B publication Critical patent/TWI245379B/en

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Classifications

    • H10W72/012—
TW093114055A 2004-05-19 2004-05-19 Semiconductor device and method for manufacturing same TWI245379B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW093114055A TWI245379B (en) 2004-05-19 2004-05-19 Semiconductor device and method for manufacturing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW093114055A TWI245379B (en) 2004-05-19 2004-05-19 Semiconductor device and method for manufacturing same

Publications (1)

Publication Number Publication Date
TWI245379B true TWI245379B (en) 2005-12-11

Family

ID=37190086

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093114055A TWI245379B (en) 2004-05-19 2004-05-19 Semiconductor device and method for manufacturing same

Country Status (1)

Country Link
TW (1) TWI245379B (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8404587B2 (en) 2008-06-19 2013-03-26 Micro Technology, Inc. Semiconductor with through-substrate interconnect
US8907457B2 (en) 2010-02-08 2014-12-09 Micron Technology, Inc. Microelectronic devices with through-substrate interconnects and associated methods of manufacturing
US9799562B2 (en) 2009-08-21 2017-10-24 Micron Technology, Inc. Vias and conductive routing layers in semiconductor substrates
CN113539946A (en) * 2020-04-16 2021-10-22 长鑫存储技术有限公司 Semiconductor structure and forming method thereof
CN114336275A (en) * 2022-03-15 2022-04-12 度亘激光技术（苏州）有限公司 Manufacturing method of electrode contact window and preparation method of semiconductor device

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10734272B2 (en) 2008-06-19 2020-08-04 Micron Technology, Inc. Semiconductor with through-substrate interconnect
US11978656B2 (en) 2008-06-19 2024-05-07 Micron Technology, Inc. Semiconductor with through-substrate interconnect
TWI495071B (en) * 2008-06-19 2015-08-01 美光科技公司 Semiconductor with interconnected substrate interconnection
US9099457B2 (en) 2008-06-19 2015-08-04 Micron Technology, Inc. Semiconductor with through-substrate interconnect
US9514975B2 (en) 2008-06-19 2016-12-06 Micron Technology, Inc. Semiconductor with through-substrate interconnect
US9917002B2 (en) 2008-06-19 2018-03-13 Micron Technology, Inc. Semiconductor with through-substrate interconnect
US8404587B2 (en) 2008-06-19 2013-03-26 Micro Technology, Inc. Semiconductor with through-substrate interconnect
US9799562B2 (en) 2009-08-21 2017-10-24 Micron Technology, Inc. Vias and conductive routing layers in semiconductor substrates
US10600689B2 (en) 2009-08-21 2020-03-24 Micron Technology, Inc. Vias and conductive routing layers in semiconductor substrates
US10685878B2 (en) 2010-02-08 2020-06-16 Micron Technology, Inc. Microelectronic devices with through-substrate interconnects and associated methods of manufacturing
US11527436B2 (en) 2010-02-08 2022-12-13 Micron Technology, Inc. Microelectronic devices with through-substrate interconnects and associated methods of manufacturing
US8907457B2 (en) 2010-02-08 2014-12-09 Micron Technology, Inc. Microelectronic devices with through-substrate interconnects and associated methods of manufacturing
US12368096B2 (en) 2010-02-08 2025-07-22 Lodestar Licensing Group Llc Microelectronic devices with through-substrate interconnects and associated methods of manufacturing
CN113539946A (en) * 2020-04-16 2021-10-22 长鑫存储技术有限公司 Semiconductor structure and forming method thereof
US12033920B2 (en) 2020-04-16 2024-07-09 Changxin Memory Technologies, Inc. Semiconductor structure and formation method thereof
CN114336275A (en) * 2022-03-15 2022-04-12 度亘激光技术（苏州）有限公司 Manufacturing method of electrode contact window and preparation method of semiconductor device
CN114336275B (en) * 2022-03-15 2023-02-21 度亘激光技术（苏州）有限公司 Manufacturing method of electrode contact window and preparation method of semiconductor device

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees