1242919 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種垂直共振腔面射型雷射，特別是一種具有 共平面式氧化侷限型(oxide-confined)光子晶體之面射型雷射。 【先前技術】 在光纖通訊系統架構中，訊號係透過光收發模組，經由電一 光及光-電的轉換過程達到傳遞的目的。目前光收發模組所使用之 光源有雷射二極體（Laser Diode，LD)、發光二極體（Laser Emitting D1〇de ’ LED)兩種，雷射二極體又可依發光方式之不同區分為邊 射型雷射(Edge-Emitting Laser)及面射型雷射（Surface_Emitting1242919 IX. Description of the invention: [Technical field to which the invention belongs] The present invention relates to a vertical cavity-cavity surface-emitting laser, particularly a surface-emitting laser having a coplanar oxide-confined photonic crystal . [Previous technology] In the optical fiber communication system architecture, the signal is transmitted through the optical transceiver module through the electrical-optical and optical-electric conversion process. At present, the light sources used in optical transceiver modules are laser diodes (LDs) and light emitting diodes (Laser Emitting D10de 'LEDs). Laser diodes can also be used according to different light emitting methods. Divided into Edge-Emitting Laser and Surface-Emitting Laser
Laser)兩大類。傳統雷射二極體多採邊射型雷射方式發光，而垂直 共振腔面射型雷射二極體(Vertical Cavity Surface ， VCSEL)和發光二極體同屬面射型之發光方式。發光二極體速度 忮、功率低，適合短距離傳輸，傳統雷射二極體輸出功率高，但 祕〒貴’主要翻在長距轉輸，而VCSEL具有傳輸速度快與 似貝的優點’故適合中、長距離通訊之用。 ，長述通6需要高功率、可靠度較高的雷射光源，且價格昂貴， 而光纖區域網路所需的產品規格較不嚴苛，廠商為達降低成本的 令刀、77採用具有低成本製程、壽命長、速度快及應用廣的 VCSEL做為光源。 VCSEL的雷射光是由晶粒表面垂直發射出來，結構主要是由 固夕層之分佈式布拉格反射鏡（distributed Bragg 1242919 _伽，腿)軸雷射共振腔，另包括有主動區、p_型及n_形金 屬。與傳統邊射型雷射不同之處1在於邊射型雷射之雷射光是 由側邊發光，而VCSEL的光輕、彳技晶的正面發射。具有低 電流、高操作速度（1·10 Gbps)及高光纖藕合率之優點。單模 ㈣⑽㈣輸出之VCSEL元件可有較長的傳輸距離，最大可 達2公里;)。 -般以習知之離子佈植或氧化條技術製作之vc狐為 多模_邮e transverse mode)輪出，應用於以太網路（eth_t) 之短距離傳輸，其傳輸距離為跡公尺。多模雷射輸出在多 模光纖_ti-modeflber)傳輸之訊號衰減損耗較大，因此傳輸距 離較短。而單模輸出之VCSEL，其電阻較大，因此速度較慢，輸 出功率最大約為1爾。其主要是受發光區較易為質子佈植缺陷影 響而不易提高’使雷射功率降低，可靠度亦降低。此外，因電流 限流區直徑小’氧化速率製程不易精確控制而較難製作，製作良 率低。 目前VCSEL社要應光通轉接模_an—中之 光傳輸締及㈣訊讀取社雷射二極體，應闕域已涵蓋數據 通。fl光連接4糾印機、光資訊產品、掃㈣及光感測器等， 並已廣泛地使用在光纖區域網路之中。因此，多模面射型雷射輸 出在夕模光、’裁傳輸之衰減 >肖耗較大而造成傳輸距離較短之技術問 題已是亟待解決。 !242919 【發明内容】 馨於以上的問題’本發明的主要目的在於提供—垂直共振腔 面射型雷射’以解決因多模面射型f射輸出在多模光纖傳輸之衰 減消耗較大，傳輸距離較短的問題。 因此，為達上述目的，本發明所揭露之垂直共振腔面射型雷 射之y實施例包括有：一基板；一下反射鏡，形成於基板之一側 表面；-N型_層，職於下反射鏡之上；—主祕，形成於 N型接觸層之上；-氧化層，形成於主動區之上；—第一上反射 鏡，、包括有-光子晶體，形成於氧化層之上；—第二上反射鏡， 成於第反射鏡之上，與第一反射鏡形成一複合式反射鏡丨一 N型金屬層，形成於主動區之周圍；以及—p型金屬層，環繞地 成於第一反射鏡之周圍。在另一實施例中，第二反射鏡更可包 括有一光子晶體。 〃為達上述目的’本發明所揭露之垂直共振腔面射型雷射一實 施例包括有：—基板；—下反射鏡，形成於基板之-側表面；-主動區’械於下反射鏡之上；—氧化層，形成於主動區之上； 一第-上反射鏡，包括有—光子晶體，形成於氧化層之上丨一第 二上反射鏡’形成於第-反射鏡之上，與第—反射鏡形成一複合 式反射鏡；—N型金屬㉟，形成於基板之另—側表面；以及一 p 型金屬層’環繞地形成於第二反射鏡之顯。在另—實施例中， 其中第二反射鏡更包括有一光子晶體。 1242919 為達上述目的，本發明所揭露之垂直共振腔面射型雷射包括 有：一基板；一下反射鏡，形成於基板之一侧表面；一 N型接觸 層，形成於下反射鏡之上；一主動區，形成於N型接觸層之上； 一佈植區，形成於主動區之上；一第一上反射鏡，包括有_光子 晶體，形成於佈植區之上；一第二上反射鏡，形成於第一反射鏡 之上，與第一反射鏡形成一複合式反射鏡；一 N型金屬層，形成 於主動區之周圍；以及一 P型金屬層，環繞地形成於第二反射鏡 之周圍。在另一實施例中，其中第二上反射鏡更包括有一光子晶 體。 為達上述目的，本發明所揭露之垂直共振腔面射型雷射包括 有··一基板；一下反射鏡，形成於基板之一侧表面；一主動區， 形成於下反射鏡之上；一佈植區，形成於主動區之上；一第一上 反射鏡，包括有一光子晶體，形成於佈植區之上；一第二上反射 鏡，形成於第-反射鏡之上，與第一反射鏡形成一複合式反射鏡； 一 N型金屬層，形成於基板之另一侧表面，·以及一 p型金屬層， %繞地形成於第二反射鏡之周圍。在另一實施例中，其中第二上 反射鏡更包括有一光子晶體。 以下在實施方式中詳細敘述本發明之詳細特徵以及優點，其 =容足以使任何熟習相關技藝者了解本伽之技術内容並據以實 施且根據本5兒明書所揭露之内容、申請專利範圍及圖式，任何 熟習相關技藝者可㈣地理解本發明相關之目的及優點。 10 1242919 【實施方式】 為使對本發明的目的、 解，兹配合實崎爾進—步的瞭 及以下之實雜方—少 以上之關於本發明内容之說明 、；W明係用以示範與解釋本 提供本主發明之專利申請範圍更進—步之解釋。之原理亚且 :料『第1圖』，係為本發明所揭露之垂直共振腔面射型雷 射之第-實麵之結_圖。_示之VCSEL係由一基^Laser) two categories. Conventional laser diodes use multiple edge-emitting lasers to emit light, while vertical cavity surface-emitting lasers (Vertical Cavity Surface (VCSEL)) and light-emitting diodes are both surface-emitting. Light emitting diodes are fast and low power, suitable for short-distance transmission. Traditional laser diodes have high output power, but the secret is expensive. It is mainly used for long-distance transmission, and VCSEL has the advantages of fast transmission speed and quasi-shell. It is suitable for medium and long distance communication. , Changshutong 6 requires a high-power, high-reliability laser light source, and it is expensive, while the product specifications required for fiber-optic LANs are less stringent. Manufacturers use 77 The cost process, long life, fast speed and widely used VCSEL as the light source. The laser light of VCSEL is emitted vertically from the surface of the crystal grain. The structure is mainly a solid Bragg layer distributed Bragg mirror (distributed Bragg 1242919 _Ga, leg) axis laser cavity, and also includes an active area, p_ type And n_ shaped metal. It is different from the traditional edge-emitting laser 1 in that the laser light of the edge-emitting laser is emitted from the side, while the light of VCSEL is light and the front side of the crystal is emitted. It has the advantages of low current, high operating speed (1 · 10 Gbps) and high fiber coupling rate. The single-mode ㈣⑽㈣ output VCSEL element can have a longer transmission distance, up to 2 km;). -Generally, the vc fox produced by the conventional ion implantation or oxidation strip technology is multi-mode _e transverse mode), which is applied to the short distance transmission of the Ethernet (eth_t), and the transmission distance is trace meters. The multi-mode laser output has a larger attenuation loss in the multi-mode fiber _ti-modeflber) transmission, so the transmission distance is shorter. The single-mode output VCSEL has a large resistance, so its speed is slow, and the maximum output power is about 1 ohm. The main reason is that the light emitting area is more likely to be affected by proton implantation defects and is not easy to increase, so that the laser power is reduced and the reliability is also reduced. In addition, because the diameter of the current-limiting region is small, the oxidation rate process is not easy to accurately control, so it is difficult to produce, and the production yield is low. At present, the VCSEL company should respond to the optical communication transfer mode _an—Zhongzhi Optical Transmission Co., Ltd. and read the laser diode, the application should already cover data communication. FL optical connection 4 correction printer, optical information products, scanning and optical sensors, etc., and has been widely used in fiber optic local area networks. Therefore, the technical problems of multi-mode surface-emission laser output attenuation in evening mode light and 'cutting transmission' are relatively large and cause short transmission distances. 242919 [Content of the invention] The above-mentioned problem "the main purpose of the present invention is to provide-vertical cavity surface-emission laser" to solve the attenuation loss of multi-mode fiber transmission due to multi-mode surface-emission f-ray output. The problem of short transmission distance. Therefore, in order to achieve the above object, the y embodiment of the vertical cavity surface emitting laser disclosed in the present invention includes: a substrate; a lower reflector formed on one side surface of the substrate; and an N-type layer, which is used for Above the lower mirror;-the main secret, formed on the N-type contact layer;-the oxide layer, formed on the active area;-the first upper mirror, including-a photonic crystal, formed on the oxide layer -A second upper reflector formed on the first reflector and forming a composite reflector with the first reflector-an N-type metal layer formed around the active area; and-a p-type metal layer surrounding the ground It is formed around the first mirror. In another embodiment, the second mirror may further include a photonic crystal. 〃In order to achieve the above-mentioned object, an embodiment of the vertical cavity surface-emitting laser disclosed in the present invention includes:-a substrate;-a lower reflector formed on a side surface of the substrate;-an active area of the lower reflector An oxide layer is formed on the active region; a first upper mirror including a photonic crystal is formed on the oxide layer; a second upper mirror is formed on the first mirror; A composite reflector is formed with the first reflector; an N-type metal diaphragm is formed on the other side surface of the substrate; and a p-type metal layer is formed around the display of the second reflector. In another embodiment, the second mirror further includes a photonic crystal. 1242919 In order to achieve the above object, the vertical cavity surface emitting laser disclosed in the present invention includes: a substrate; a lower reflector formed on a side surface of the substrate; and an N-type contact layer formed on the lower reflector. An active region formed on the N-type contact layer; a planting region formed on the active region; a first upper mirror including a photonic crystal formed on the planting region; a second An upper mirror is formed on the first mirror and forms a composite mirror with the first mirror; an N-type metal layer is formed around the active area; and a P-type metal layer is formed around the first Around the second mirror. In another embodiment, the second upper mirror further includes a photonic crystal. To achieve the above object, the vertical cavity surface-emitting laser disclosed in the present invention includes a substrate; a lower reflector formed on a side surface of the substrate; an active area formed on the lower reflector; A planting area is formed on the active area; a first upper mirror including a photonic crystal is formed on the planting area; a second upper mirror is formed on the first-mirror and the first The mirror forms a composite mirror; an N-type metal layer is formed on the other surface of the substrate, and a p-type metal layer is formed around the second mirror around the ground. In another embodiment, the second upper mirror further includes a photonic crystal. The detailed features and advantages of the present invention are described in detail in the following embodiments, which is enough to enable any person skilled in the relevant arts to understand the technical content of Benjamin and implement it according to the content disclosed in this booklet and the scope of patent application. As well as the drawings, anyone skilled in the relevant arts can easily understand the related objects and advantages of the present invention. 10 1242919 [Embodiment] In order to understand the purpose of the present invention, we will cooperate with Shi Qier to further the following practical steps and less-the above description of the content of the invention; The explanation provides a further explanation of the scope of the patent application for the main invention. The principle of the graph is as follows: "Fig. 1" is the knot-graph of the real surface of the vertical cavity-cavity-type laser disclosed in the present invention. _Show VCSEL is based on a base ^
11〇形成於基板11〇 一側表面之下反射鏡12〇、一形成於下反 射鏡W上之N型接觸層⑽、—形成於n型接觸層上之主動區 140、-形成於主動區上之氧化層15()、—包含光子晶體⑹之第 -上反射鏡160、-形成於第一上反射鏡副之第二上反射鏡 170、一 N型金屬層18〇、及一 p型金屬層19〇所構成。110 is formed on the surface of the substrate 110 on one side of the mirror 120, an N-type contact layer 形成 formed on the lower mirror W,-an active region 140 formed on the n-type contact layer,-formed on the active region The upper oxide layer 15 (), the first upper mirror 160 containing the photonic crystal ⑹, the second upper mirror 170 formed on the first upper mirror pair, an N-type metal layer 18o, and a p-type The metal layer 19 is formed.
請參考『第2圖』，係為本發明所揭露之錢共振腔面射型雷 射之第二實施例之結構示意圖。圖中所示之VCSEL係由一基板 110、一形成於基板11〇 一侧表面之下反射鏡12〇、一形成於下反 射鏡120上之N型接觸層13〇、一形成於N型接觸層上之主動區 W0、一形成於主動區上之氧化層ι5〇、一包含光子晶體ι61之第 一上反射鏡160、一形成於第一上反射鏡160並包含光子晶體Π1 之第二上反射鏡170、一 N型金屬層180、及一 P型金屬層190 所構成。 請參考『第3圖』，係為本發明所揭露之垂直共振腔面射型雷 11 1242919 射之第三實補之結構示意κ。圖巾所示之vcsel係由一基板 no、一形成於基板no —側表面之下反射鏡12〇、一形成於下反 射鏡12〇上之主動區141、一形成於主動區141上之氧化層1別、 -包含光子晶體161之第—上反射鏡、—形成於第_上反射 鏡160之第二上反射鏡17〇、一形成於基板11〇之另一侧表面之^ 型金屬層181、及一 P型金屬層19〇所構成。 請參考『第4圖』，係為本發明所揭露之垂直共振腔面射型雷 射之第四實施例之結構示意圖。圖中所示之VCSEL係由一基板 no、一形成於基板no —侧表面之下反射鏡12〇、一形成於下反 射鏡120上之主動區141、一形成於主動區141上之氧化層1刈、 一包合光子晶體161之第一上反射鏡16〇、一形成於第一上反射 鏡160並包含光子晶體171之第二上反射鏡170、一形成於基板 110之另一側表面之N型金屬層18卜及一 P型金屬層19〇所構 成。 在第一〜第四實施例中所揭露之共平面式氧化侷限型之垂直 共振腔面射型雷射，下反射鏡120、第一上反射鏡16〇以及第二下 反射鏡170組成複合式布拉格反鏡，其係為化合物半導體材料。 其中下反射鏡120係為一 N型布拉格反鏡，作為VCSEL之底部 雷射鏡面。在另一實施例中，下反射鏡12〇可未摻雜之布拉格反 射叙第上反射鏡為P-型布拉格反鏡，第二上反射鏡170 為介電質布拉格反鏡，第一上反射鏡160與第二上反射鏡170共 12 1242919 同組成頂部f射鏡面。雷射光由第二上反射鏡170頂面輸出。 種不同 =鏡轉料方面’財下反射鏡12G是她偏低兩 締不门/純之材觸構成。第—上反射鏡_是由數對高低 =同折射係數之材料所構成，厚度為λ/4。第二上反射鏡17〇 疋请至十數對兩低兩種不同折射係數之材料所構成，例如 TKVS^彳度為λ/4，使此—複合式布拉格反鏡全部反射率達到 、”勺98/0以上。而此一複合式布拉袼反射鏡因第一上反射鏡副 由數對又/4蟲晶層堆疊而成’可降低串聯電阻。此處之又係指發 光波長。 弟-上反射鏡16〇中的光子晶體結構ΐ6ι，其晶格常數為八、 晶格孔直徑為a ’可作為雷射光係數導引（▲咖岭作為 VCSEL雷射光之偏極控制，亦可形成單模輸出。 此外基板110為N型重摻雜或半絕緣之坤化鎵⑴叫或 麟化銅_之半導體基板,型接觸層13()為—重摻雜之坤化嫁 層，以降低金屬接觸電阻。主動區15〇是由量子井及被覆層所構φ 成，主動區150之厚度為發光波長λ，亦可為波長λ之整數倍， 例如2 λ、3 λ ····.·。氧化層150可選用ΑΙΟχ ’是由選擇性氧化所· 形成，具有高阻抗之特性，可使電流流向中央發光主動區。㈣ 金屬180、181可為人1^、抑、人11之組合，？型金屬19()可為力、. Pt、Au之組合，N型金屬180、181分別與p型金屬19〇位於vc狐 · 晶粒的同一平面。N型金屬18〇形成於主動區14〇之周圍。p型金 13 1242919 屬190為環型，環繞地形成於第二反射鏡170之周圍。在一實施 例中’P型金屬190可為-圓形環。在另—實施例中，p型金屬 190可為一方形環。 、 二参考『第5圖』’係為本發鴨揭露之垂直共振腔面射型雷 射之第五，、施例之結構不意圖。圖巾所示之VC狐係由一基板 210形成於基板21〇 -側表面之下反射鏡22〇、一形成於下反 射鏡220上之N型接 23〇、_形成於n型接觸層上之主動區 _、一形成於主動區上之氧離子佈植區bo、一包含光子晶體洲 之第-上反射鏡260、-形成於第—上反射鏡之第二上反射 、兄270 N型金屬層280、及_ ?型金屬層29〇所構成。 口月麥考第6圖』’係為本發明所揭露之垂直共振腔面射型雷 射之第六實施例之結構示意圖。圖中所示之VCSEL係由一基板 21〇、一形成於基板210 —側表面之下反射鏡22〇、一形成於下反 射鏡22〇上之N型接觸層现一形成於N型接觸層上之主動區 240形成於主動區上之氧離子佈植區250、一包含光子晶體261 之第-上反射鏡26G、-形成於第_上反射鏡之上並包括有 光子晶體271之第二上反射鏡27〇、一 N型金屬層28〇、及一 p 型金屬層290所構成。 請參考『第7圖』，係為本發明所揭露之垂直共振腔面射型雷 射之第七實施例之結構示意圖。圖中所示之VCSEL係由一基板 21〇、一形成於基板210 —側表面之下反射鏡22〇、一形成於下反 14 1242919 射鏡22〇上之主’動d 24〇、一形成於主動區24〇上之氧離子佈植 區250、一包含光子晶體261之第一上反射鏡26〇、一形成於第一 上反射鏡260之第二上反射鏡27〇、一形成於基板21〇另一側表面 之N型金屬層280、及一 P型金屬層29〇所構成。 請參考『第8圖』，係為本發明所揭#之垂直共振月空面射型雷 射之第八實施例之結構示意圖。圖中所示之VCSEL係由一基板 210、一形成於基板210 —侧表面之下反射鏡22()、一形成於下反 射鏡220上之主動區240、一形成於主動區24〇上之氧離子佈植 區250、一包含光子晶體261之第一上反射鏡26〇、一形成於第一 上反射鏡260之上並包括有光子晶體271之第二上反射鏡27〇、一 形成於基板210另一側表面之N型金屬層280、及一 p型金屬層 290所構成。 在第五〜第八實施例中所揭露之共平面式氧離子佈值型之垂 直共振腔面射型雷射，除氧離子佈植區250之外，其餘元件之組 成與功用均與第一〜第四實施例相同或相似似，在此不再重複說 明。 形成於主動區240之上之氧離子佈植區25〇，其係利用氧離 子佈植，形成晶格破壞區（damagedregion)，此晶格破壞區具有高 阻抗’使電流流向中央發光主動區，氧離子佈植區250亦可為質 子佈植區，以質子佈植製程形成。 『第9圖』為本發明之一共平面式氧離子佈植型光子晶體 15 1242919 VCSEL之光功率-電流-電壓特圖，在〇〇c及85义時，其特性良好。 『第1〇圖』為該光子晶體VCSEL之光譜特性，為多模特性^第 ha圖』〜『第11B圖』為光子晶體VCSEL之光譜及近場特性， 其晶格常數八=5师，a/A=0.4，a為光子晶體孔經大小，光譜特· 性顯示可以光子晶體形成單模控制。『第12八圖 日、 乐1213圖』 為光子晶體VCSEL之規及近場特性，其晶格常數λ=5 _， a/A=0.5，為類似單模特性。 本發明以一光子晶體結構，形成於一 VCSEL頂面複合式 φ 咖中’以控制VCSEL之偏極輸出’亦可形成一單模態雷射輸 出’可應用於單模光纖及傳輪模組。 雖然本發明以前述之實施例揭露如上，然其並非用以限定本 發明。在不脫離本發明之精神和範_，所為之更動與潤飾，均 屬本發明之翻保護範目。關於本發騎界定之保護範圍請參考 所附之申請專利範圍。 【圖式簡單說明】 _ 第1圖係為本發明所揭露之垂直共振腔面射型雷射之第一實 施例之結構示意圖； 貝 第2圖係為本發明所揭露之垂直共振腔面射型雷射之第二實 ·· 施例之結構示意圖； —貝 第3圖係為本發明所揭露之垂直共振腔面射型雷射之第三實 施例之結構示意圖； 貝 16 1242919 第4圖係為本發明所揭露之垂直共振腔面射型雷射之第四與 施例之結構示意圖； 貝 第5圖係為本發明所揭露之垂直共振腔面射型雷射之第五實 施例之結構示意圖； 貝 第6圖係為本發明所揭露之垂直共振腔面射型雷射之第六實 施例之結構示意圖； 、 第7圖係為本發明所揭露之垂直共振腔面射型雷射之第七實 施例之結構示意圖； 第8圖係為本發明所揭露之垂直共振腔面射型雷射之第八實 施例之結構示意圖； 弟9圖係為本發明所揭露之垂直共振腔面射型雷射之光功率· 電流-電壓特性圖； 第10圖係為本發明所揭露之垂直共振腔面射型雷射之光譜 特性； 第ΠΑ圖及第ΠΒ圖係為本發明所揭露之垂直共振腔面射型 雷射之光譜及近場特性；以及 第12A圖及第12B圖係為本發明所揭露之垂直共振腔面射型 雷射之光譜及近場特性。 【主要元件符號說明】 11〇 ...........................基板 120 ...........................下反射鏡 17 .N型接觸層 .主動區 .氧化層 .第一上反射鏡 .光子晶體 .第二上反射鏡 .光子晶體 .N型金屬層 .N型金屬層 JP型金屬層 .基板 .下反射鏡 .N型接觸層 ,主動區 .氧離子佈植區 ,第一上反射鏡 ，光子晶體 ,第二上反射鏡 ，光子晶體 ,Ν型金屬層 ,Ν型金屬層 18 1242919 290 ί..Ρ型金屬層Please refer to "Fig. 2", which is a schematic structural diagram of the second embodiment of the Qian cavity resonator surface-emitting laser disclosed in the present invention. The VCSEL shown in the figure is composed of a substrate 110, a reflector 120 formed below the surface of one side of the substrate 110, an N-type contact layer 13 formed on the lower reflector 120, and an N-type contact. An active region W0 on the layer, an oxide layer ι50 formed on the active region, a first upper mirror 160 containing a photonic crystal ι61, a second upper mirror 160 formed on the first upper mirror 160 and including a photonic crystal Π1 The reflector 170, an N-type metal layer 180, and a P-type metal layer 190 are formed. Please refer to "Fig. 3", which is a schematic diagram of the third actual complement of the vertical cavity-cavity shot 11 1242919 shot by the present invention. The vcsel shown in the figure is composed of a substrate no, a reflector 120 formed below the side surface of the substrate no, an active region 141 formed on the lower mirror 120, and an oxidation formed on the active region 141. Layer 1-the first upper mirror containing photonic crystal 161, the second upper mirror 170 formed on the first upper mirror 160, and the metal layer formed on the other side of the substrate 11 181 and a P-type metal layer 190. Please refer to "Fig. 4", which is a schematic structural diagram of a fourth embodiment of the vertical cavity surface-emitting laser disclosed in the present invention. The VCSEL shown in the figure is composed of a substrate no, a reflector 12 formed below the side surface of the substrate no, an active region 141 formed on the lower reflector 120, and an oxide layer formed on the active region 141. 1) A first upper mirror 160 that includes a photonic crystal 161, a second upper mirror 170 that is formed on the first upper mirror 160 and includes a photonic crystal 171, and a second surface that is formed on the other side of the substrate 110 The N-type metal layer 18b and a P-type metal layer 19 are formed. In the first to fourth embodiments, the co-planar oxidation-limited vertical cavity-cavity laser is disclosed. The lower mirror 120, the first upper mirror 160, and the second lower mirror 170 form a composite type. Bragg mirror, which is a compound semiconductor material. The lower mirror 120 is an N-type Bragg mirror, which serves as the laser mirror surface at the bottom of the VCSEL. In another embodiment, the lower reflecting mirror 120 may be an undoped Bragg reflector. The upper reflector is a P-type Bragg reflector, the second upper mirror 170 is a dielectric Bragg reflector, and the first upper reflector is The mirror 160 and the second upper reflection mirror 170 together form a total of 12 1242919 and form a top f-ray mirror surface. The laser light is output from the top surface of the second upper mirror 170. This difference = Mirror-turning material ‘Caixia Mirror 12G is a combination of her low-key and pure material. The first—upper mirror_ is composed of a number of pairs of high and low = materials with the same refractive index, and the thickness is λ / 4. The second upper mirror 17 ° is made up of ten pairs of two materials with two different refractive indices. For example, the TKVS ^ 彳 degree is λ / 4, so that the overall reflectance of the composite Bragg mirror reaches, Above 98/0. And this composite Bragg reflector is formed by stacking several pairs of / 4 insect crystal layers on the first upper mirror, which can reduce the series resistance. Here again it refers to the emission wavelength. Brother -The photonic crystal structure ΐ6ι in the upper mirror 160 has a lattice constant of eight and a lattice hole diameter of a 'can be used as a guide for the laser light coefficient (▲ Ka Ling is used as a polar control for VCSEL laser light and can also be formed Single-mode output. In addition, the substrate 110 is a semiconductor substrate of N-type heavily doped or semi-insulated Kunhua gallium or Linhua copper. Metal contact resistance. The active region 15 is formed by a quantum well and a coating layer φ. The thickness of the active region 150 is the light emission wavelength λ, and may be an integer multiple of the wavelength λ, such as 2 λ, 3 λ ···. · The oxide layer 150 can be made of AIOχ ', which is formed by selective oxidation, and has high resistance characteristics, Make current flow to the central luminous active area. ㈣ Metal 180, 181 can be a combination of 1 ^, 、, and 11;? -Type metal 19 () can be a combination of force,. Pt, Au, N-type metal 180, 181, respectively It is located on the same plane as the p-type metal 19o. The N-type metal 18o is formed around the active area 14o. The p-type gold 13 1242919 is a ring type 190 and is formed around the second mirror 170. In one embodiment, the 'P-type metal 190 may be a circular ring. In another embodiment, the p-type metal 190 may be a square ring. 2. Refer to "Fig. 5" for the present invention. Fifth, the vertical resonant cavity surface-emitting laser disclosed by the duck, the structure of the embodiment is not intended. The VC fox shown in the figure is formed by a substrate 210 under the substrate 21o-side surface of the mirror 22o, An N-type junction 23 formed on the lower mirror 220, an active region formed on the n-type contact layer, an oxygen ion implantation region bo formed on the active region, and a second region containing a photonic crystal island- The upper mirror 260 is formed by the second upper reflection formed on the first upper mirror, the 270 N-type metal layer 280, and the? -Type metal layer 29.口 月 麦考 第 6 图 'is a schematic structural diagram of a sixth embodiment of the vertical cavity surface-emitting laser disclosed in the present invention. The VCSEL shown in the figure is formed by a substrate 21 and a substrate. 210 —The reflector 22 under the side surface, an N-type contact layer formed on the lower reflector 22, an active region formed on the N-type contact layer 240, and an oxygen ion implantation region 250 formed on the active region A first upper mirror 26G containing a photonic crystal 261, a second upper mirror 27o formed on the first upper mirror and including a photonic crystal 271, an N-type metal layer 28o, and a p A metal layer 290 is formed. Please refer to "Figure 7", which is a schematic structural diagram of a seventh embodiment of a vertical cavity surface-emission laser disclosed in the present invention. The VCSEL shown in the figure is formed by a substrate 21o, a reflector 22o formed below the side surface of the substrate 210, and a main lens 24o formed on the lower mirror 14 1242919 mirror 22o. An oxygen ion implantation region 250 on the active region 24, a first upper mirror 26o containing a photonic crystal 261, a second upper mirror 27o formed on the first upper mirror 260, and a substrate formed 21 ° is composed of an N-type metal layer 280 on the other surface and a P-type metal layer 290. Please refer to "Fig. 8", which is a schematic structural diagram of the eighth embodiment of the vertical resonance moon-space surface-emitting laser disclosed in # of the present invention. The VCSEL shown in the figure consists of a substrate 210, a reflector 22 () formed below the side surface of the substrate 210, an active area 240 formed on the lower reflector 220, and an active area 240 formed on the active area 24o. An oxygen ion implantation region 250, a first upper mirror 26o containing a photonic crystal 261, a second upper mirror 27o formed on the first upper mirror 260 and including a photonic crystal 271, and a second upper mirror An N-type metal layer 280 and a p-type metal layer 290 are formed on the other surface of the substrate 210. In the fifth to eighth embodiments, the co-planar oxygen ion cloth-type vertical resonant cavity surface-emitting laser is disclosed. Except for the oxygen ion implantation region 250, the composition and function of other components are the same as those of the first. The fourth embodiment is the same or similar, and will not be repeated here. An oxygen ion implantation region 25 formed on the active region 240 is formed by using oxygen ion implantation to form a latticed region. The latticed region has a high impedance to allow current to flow to the central light emitting active region. The oxygen ion implantation region 250 may also be a proton implantation region, which is formed by a proton implantation process. [Figure 9] This is a coplanar oxygen ion implanted photonic crystal 15 1242919 VCSEL optical power-current-voltage characteristic chart, and its characteristics are good at 〇c and 85. [Figure 10] is the spectral characteristics of the photonic crystal VCSEL, which is multi-model ^ Figure ha] ~ [Figure 11B] is the spectral and near field characteristics of the photonic crystal VCSEL, and its lattice constant is eight = 5 divisions , A / A = 0.4, a is the pore size of the photonic crystal, and the spectral characteristics show that the photonic crystal can be controlled in a single mode. 『Figure 12 of the Sun and Le 1213』 are the specifications and near-field characteristics of the photonic crystal VCSEL. Its lattice constants λ = 5 _ and a / A = 0.5 are similar to a single model. The invention uses a photonic crystal structure and is formed in a VCSEL top surface composite φ coffee to 'control the polar output of VCSEL' and also to form a single-mode laser output ', which can be applied to single-mode fiber and transmission module . Although the present invention is disclosed in the foregoing embodiments, it is not intended to limit the present invention. Without deviating from the spirit and scope of the present invention, changes and retouching are included in the scope of the present invention. Please refer to the attached patent application scope for the protection scope defined by this hair rider. [Brief description of the drawings] _ Figure 1 is a structural diagram of the first embodiment of the vertical cavity surface-emitting laser disclosed in the present invention; Figure 2 is a vertical cavity surface-emitting laser disclosed in the present invention The second embodiment of the type laser · The structure diagram of the embodiment;-Fig. 3 is a schematic diagram of the third embodiment of the vertical cavity surface-emission laser disclosed by the present invention; Be 16 1242919 Fig. 4 It is a schematic diagram of the fourth and embodiment of the vertical cavity surface-emitting laser disclosed in the present invention; FIG. 5 is a diagram of the fifth embodiment of the vertical cavity surface-emitting laser disclosed in the present invention Schematic diagram; Figure 6 is a schematic diagram of the sixth embodiment of the vertical cavity surface-emission laser disclosed in the present invention; and Figure 7 is a vertical cavity surface-emission laser disclosed in the present invention Schematic diagram of the seventh embodiment; Figure 8 is a schematic diagram of the eighth embodiment of the vertical resonant cavity surface-emitting laser disclosed in the present invention; Figure 9 is a diagram of the vertical resonant cavity surface disclosed in the present invention Optical Power of Radiation Laser · Current-Electric Characteristic diagrams; Figure 10 is the spectral characteristics of the vertical cavity surface-emission laser disclosed in the present invention; Figures ΠA and ΠB are the spectra and vertical cavity surface-emission lasers of the present invention; Near-field characteristics; and Figures 12A and 12B are the spectrum and near-field characteristics of the vertical cavity surface-emission laser disclosed in the present invention. [Description of main component symbols] 11〇 .............. Substrate 120 ............. .............. Lower mirror 17. N-type contact layer. Active area. Oxide layer. First upper mirror. Photonic crystal. Second upper mirror. Photonic crystal. N-type Metal layer. N-type metal layer. JP-type metal layer. Substrate. Lower mirror. N-type contact layer, active area. Oxygen ion implantation area, first upper mirror, photonic crystal, second upper mirror, photonic crystal, N-type metal layer, N-type metal layer 18 1242919 290 ί ... P-type metal layer
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