TWI240303B - Method to enhance the photo process window in IC manufacturing - Google Patents

Abstract

A method to enhance the photo process window in IC manufacturing is provided. With forbidden pitches applied in the design rule, the photo process can have a sufficient common window for next generation devices without the use of next generation exposure tools. For a given illumination condition, worse, and later forbidden, pitch regions can be determined according to obtained depth of focus variations and critical dimension uniformity variations over a range of pitches. These worse pitch regions are then forbade in the design rule so that they won't appear in the chip layout. Thereby, the photo process window is enhanced and consequently the patterning performance and yield of the chip manufacture are increased.

Description

1240303 Five 'invention description (1) [Technical field to which the invention belongs] The present invention relates to a method for finding out forbidden pitches in a lithography process, and also relates to a layout in a circuit. The design rule of pattern) imposes a restriction on the pitch of the graphics to enhance the ability of the lithographic process space to cover various layout patterns. [Prior Art] Lithography processes can be used, for example, in the manufacture of integrated circuits (ICs). In this application, the lithography technique is a technique used when transferring a designed pattern from a mask or a ret icle to a photoresist on a wafer surface. That is, a patterning process. Because the component and circuit layout patterns are transferred to the wafer surface by 'etching' or ion implantation, etc., the pattern on the photoresist is Lithography is defined, so lithography is a very important process step in IC manufacturing. Generally, a photomask contains a circuit layout pattern corresponding to a layer of a 1C, and is irradiated with a radiation beam, that is, exposed, and this pattern is mapped to a layer having a coated radiation-sensitive material, that is, a photoresist. Various target locations on the wafer substrate. A target site contains one or more dies. Usually a wafer contains a network of many target parts, and the radiation beam illuminates these many target parts in sequence.

1240303 V. Description of the invention (2) ^ A key factor in optical lithography is the wavelength of the UV light source. Because the photoresist is only sensitive to a small wavelength (lambda) of ultraviolet (U1 tra-viol et 1 ight, UV), we usually choose the exposure based on the photoresist's sensitivity and the feature size of the I channel. Light wavelength. The shorter the wavelength, the better the resolution. As the size of the pattern is reduced to make IC's having a higher degree of accumulation, the wavelength of the exposure light also needs to be shortened to meet the necessary conditions for patterning resolution. Therefore, the trend of the next-generation lithography technology is to use shorter exposure light, such as deep ultraviolet (eg, 157nm), extreme ultraviolet (EUV), X-ray, or including the use of phase shift masks. ) Lithography system, electron beam lithography system, ion beam lithography system, and so on. The continuous development of semiconductor process technology has brought optical lithography technology very close to its limits. Current advanced processes have often produced graphic patterns or ics whose critical dimension (CD) is less than the exposure wavelength. The critical size of a circuit is defined as the most important and usually the smallest width of a feature or the most important and usually the smallest distance between two figures, that is, the most representative in the circuit design and the most consistent with the design The size of the graphics required by the user. When the pattern of the pattern is designed to be smaller than the exposure wavelength, it is known that the optical proximity effect is more severe and cannot be tolerated in advanced sub-lambda processes. 0PE is optical exposure The tool has a well-known characteristic. It occurs when the closely spaced circuit patterns are transferred to the photoresist on the wafer by lithography. Because the light waves of adjacent patterns interact, that is, diffraction , And cause the pattern of the final transfer to the photoresist

Page 10 1240303 V. Description of the invention (3) Distortion, which changes depending on the shape of the pattern. The main problems caused by OPE are undesirable variations in CD and poor process latitude. The variation of the CD and the degree of freedom of the process are a direct result of the interference between the light fields of adjacent patterns. In the advanced process, the CD uniformity (CD uniformity,

CDU) control is very important, because it will directly affect the yield of wafer classification and the speed of storing the final product. If the degree of freedom of the manufacturing process, including the exposure process, becomes worse, it means that when some factors that may affect the line width change slightly, the line width of the final image on the photoresist easily exceeds the allowable range and the product must be redone rework), thus increasing costs.

The characteristics of the exposure tool can be adjusted to use relatively incoherent lighting to reduce problems caused by OPE. Another type of better OPE correction method is called optical proximity correction (0pi: ical Proximity Correction, 0PC) technology, this technology is to pre-correct the pattern on the mask. For example, scattering bars are used on the reticle to assist in correcting graphics. This method of adding a scattering bar is very suitable for modifying relatively isolated features to make them appear denser. This method can increase the depth of focus (Depth of Focus, D0F) of isolated graphics after exposure and improve the quality of lithography. At the same time, the dense graphic structure can greatly increase the freedom of the process, especially for traditional lighting systems. In this method, a scattering bar as a correction pattern is placed between isolated patterns or adjacent to the edges of isolated patterns. Therefore, it is best to adjust the gradient of the edge illumination intensity of isolated patterns. Can cause this intensity gradient to match the edge intensity gradient of dense graphics:

1240303 V. Description of the invention (4) ----- " Circle · --- Consistent, and at the same time there is an ugly person / owe θ the knowledge between the isolated graphics distance will be close to the dense 1, the distance between the graphics . ^ ^ ΪThe use of more advanced lighting systems is gradually finding a significantly unfavorable one. Forbidden pi tch 1 ^ 〇mena). The graphic pitch (pi tch) is the sum of the graphic width and the graphic pitch. Shown as * 1 # and π ne /, 5 ′ has been found in a major figure in the dense graphics area. It is especially the degree of freedom of the exposure process. In some figures, the distance range Φ I α, #. ^ Γ has more degrees of process freedom than an isolated graphic of the same size. The page * shows the existence of neighboring features. The 2-shaped structure of the i ^ f set is not always conducive to the imaging of the main graphic. =. The phenomenon has violated the above-mentioned better recognition of the generally recognized dense graphic structure. 1 This addition of the correction pattern of the scattering bar may not necessarily reduce the variation of the CD and the degree of freedom of Ϊ ^ Ϊ. Because prohibiting the range of the graphics pitch will make the imaging results poor ^ severely restricts the development of advanced lithography processes, it is necessary to suppress the phenomenon of prohibition = immediate distance to further improve the CDU and process freedom, in the use of the known Semiconductor component manufacturing technology and equipment. [Summary of the Invention] This invention is related to a method and a technique for distinguishing the range of prohibited graphics sections 'in the range of prohibited graphics pitches, the degree of freedom of the CD and the process will deteriorate' and in design and Eliminate the prohibited graphic pitch range in the process. More specifically, the present invention relates to a method for designing an integrated component and forming the integrated component on a substrate by using a lithographic exposure apparatus, by which a circuit pattern can be discerned Poor graphic pitch.

Page 12 1240303 Five 'Description of the Invention (5) It is known that the variation of the CD and the degree of freedom of the process are a direct result of the interference of the light fields of adjacent graphics with each other. In the case of destructive light field interference, the degree of freedom of the CD and the process will deteriorate. The light field produced by adjacent graphics will depend on the graphics pitch and lighting conditions. If the lighting conditions are fixed, the forbidden pattern pitch will appear in the place of destructive interference between light fields. Under the fixed lighting conditions, this method is used in conjunction with the use of optical proximity correction technology to make use of the results of the DOF and CDU process to determine the poor graphic pitch. Furthermore, the circuit layout pattern of the photoresist to be transferred from the photomask to the wafer is drawn by obeying design rules. The design rule contains a number of different pattern dimensional rules' in Ic, including the rule of the graph pitch. After the forbidden graphics pitch is found by the method of the present invention, the restriction of forbidden graphics pitch can be imposed in the design rules, that is, the prohibited graphics pitch cannot be used to draw the line, so the forbidden graphics pitch will not occur. Now in the line layout pattern. The advantage of the method and technology of the present invention is that it can be used to identify and further exclude the range of the forbidden pattern pitch, and further improves the CDU and process freedom by using currently known semiconductor technology and equipment. That is, the optical process space is greatly improved, so that the effect of the patterning process and the yield of X-chip manufacturing are improved. From the following description of one embodiment of the method of the present invention, those skilled in the art can better understand the advantages of the present invention. "

1240303 aT Jau 一 丨 丨 丨 'Book tiiaiiimί' " m -B. '' M. Ιιιι _ι__ιι i..iiui._ 丨 丨! 丨 __ 丨 丨 丨 I 丨 __wi iijmiiwjMfcwa— V. Description of the invention ( 6) It is necessary to find out the range of the forbidden graphics pitch and further eliminate the bad film produced by it. The methods and techniques provided by the present invention can be used to identify the range of the π forbidden pattern pitch. This method is based on the use of optical proximity correction technology under fixed lighting conditions and the use of DOF and CDU process results to determine Poor graphic pitch. Further restrictions on the design rules that prohibit the use of these prohibited graphic pitches can exclude the occurrence of prohibited graphic pitches in the line layout pattern. Refer to the illustrations in Figures 1 to 5 'here An embodiment of the present invention is described. FIG. 1 is a diagram showing a certain range of graphic sections required for manufacturing a integrated component by using a depth of focus DOF obtained by performing a polycrystalline lithography (PO y 1 aye Γ) lithography imaging. A corresponding curve diagram of the distance, without prohibiting the prohibited graphic pitch. This diagram is drawn according to the result of lithography imaging of a thin layer of polycrystalline stone. The lighting conditions in this lithography process are Commonly fixed, featuring the use of QUASAR illumination mode, the numerical aperture (Numerical Aperture, NA) of the condenser lens of the exposure system is 0.8. Partial coherence ratio (sigma), also The ratio of the numerical aperture of the illumination condenser lens to the numerical aperture of the imaging objective lens is 0.8 / (K 5. Exposure wavelength; I is 193 nm. Features on other processes and on the graph include key dimensions on the wafer It is 80 nanometers, and the horizontal axis represents the graphic pitch in micrometers, which ranges from 0.1 μm to 2.2 μm. The vertical axis represents the depth of focus when the exposure freedom is fixed at 8%, and the range value is From 0 · 20 microns to 0 · 60 microns. Any marked point on the curve ^ corresponds directly to the horizontal axis is its graphic pitch value, and corresponds vertically to the vertical axis is its

Page 14 1240303

Five ... Description of the invention (7) DOF-value. This curve is green according to the marked points of the graphic pitch from small to large. In the process, according to the size of the graphic pitch, ^ once connected to all: add a scattering bar to help modify the graphic to improve D0F The more S: such as human private 4 丄 Μ & ^ ^ ^ the greater the distance, the more visible the structure, you need to add a scattering bar to correct the graphics, because to make the more isolated ^ 卩 more dense. There are three types of marking points on the curve, square marking points ^: The lithography exposure process that assists in correcting the graphics by scattering bars, which can be called MB (NoScattering Bars), so it corresponds to a relatively small graphic pitch =, a 'The marked point with the symbol of p 〇 3 indicates that this marked point is a dof value generated by the graphic pitch of 0.36 micrometers; the circular marked point represents the addition of a scattering bar at the center between the two figures to help correct the figure. The lithography exposure process, which can be called CSB (Center Scattering Bars), corresponds to a relatively medium-sized graphic pitch value; the triangle mark points represent the addition of a scattering bar at the edges of two sides adjacent to a graphic to help correct the lithography of the graphic The exposure process, which can be called ESB (Edge Scattering Bars), corresponds to a relatively large graphic pitch value. Even if the optical proximity correction technology with the scattering bar pattern has been applied, it can be seen in the i-th figure that the DOF value after lithography imaging is particularly low in some of the pattern pitch sub-ranges, so these graph pitch sub-ranges are worse. Here we mainly consider the pattern pitch range of the pattern that is aided by the use of scattering bars to help correct the pattern. Therefore, in Figure 1, we consider the pattern pitch greater than 0.30 micron according to this principle. Then according to the results of the D0F value displayed in this graph, find one or more marked points with the worst D0F value in the range of the local graphic pitch, for example, the graphic pitch is 0.6 micrometers, that is, the P60 marked points, and these marked The graphic pitch corresponding to the point is the bad graphic pitch. Up and down adjacent graphic sections of each of these bad graphic pitches

Page 15 1240303 _. Description of the invention (8) The distance is also a poor graphic pitch, because the DOF value is still _ good graphic pitch and the adjacent graphic pitch above and below the rabbit, ,, not bad. Therefore, no range, that is, the forbidden pattern pitch range, and the good pattern pitch number refers to FIG. 2, which shows that the graph pitch range of the main auxiliary correction pattern is considered from the first graph to find four. ^ Use the scatter bar to surround the curve and remove the curves corresponding to these sub-ranges ::::: 夂: As shown in box 200 in the figure, we can see that these four unpaid & results. From ◦. One micron, U8 to 0.883 to 0.97 micron pattern pitch. After removing the part in the 箩 = range, you can see that it is greater than. · 3 coffee After prohibiting the bad graphic pitch sub-range, the process result can be changed to i. Refer to Figure 3, which shows the first step! The "micro-view represented by the image" is a graph of the obtained critical dimension uniformity (CDU) against one of the same graphic pitch ranges, without prohibiting the graphic pitch. The vertical axis in the figure is an index representing the size of the CDU, and its range value is from 0.05 to 0.35. In this example, the larger the index value, the lower the CD1]. For a specific size, after the image pitch is exposed, it will correspond to an index representing the size of the CDU. Next, the CDU index results shown in this graph find one or more marked points with the worst CDU index and the largest index in this example in the range of the local graphic shouting range. The graphic sections corresponding to these marked points Distance is bad pitch without graphics. The top and bottom adjacent graphic pitches of each of these bad graphic pitches are also poor graphic pitches' because the CDU index is still poor. Therefore, a bad picture #shape pitch and its upper and lower adjacent picture pitches become a poor picture pitch sub-range,

1 side

1240303 V. Description of the invention (9) That is to say, the range of the graphic pitch that should be forbidden. The figure shows four bad CDU curve areas 3 0 0, 302, 304, and 30 6. Referring to FIG. 4, it is shown from FIG. 3 that after considering a pattern pitch greater than 0.30 micrometers to find four bad pattern pitch sub-ranges, the curve areas 400, 402 corresponding to these sub-ranges will be found. , 404, and 406 are removed. These four sub-ranges overlap slightly with the four sub-pattern sub-ranges shown in box 2 00 in Figure 2. This confirms that the four sub-pattern pitch ranges found from the judgment in Figure 1 according to the DOF value will indeed result in a worse CDU. From Figure 4, it can be seen that after excluding these bad pattern pitch sub-ranges, the CDU process results become better, that is, better control can be improved (: 1) 11 process results. σ describes another embodiment here. Referring to FIG. 5, there are two corresponding graphs showing the depth of focus obtained by performing a lithography of a contact layer (con tact layer) versus a certain range of graphic pitch required for manufacturing an integrated component. After this contact layer was subjected to graphic appearance inspection (After) developed inspected, s AD Ij learned that the critical dimension was 0.5 μm. In this lithography process, the lighting conditions are commonly fixed, featuring the use of QUASAR illumination mode, the numerical aperture of the illumination condenser lens of the optical system is 0.8, the partial coherence ratio is GW ^ 5, and the exposure wavelength is 193 nm. . Other features include, "horizontal axis" represents the graphic pitch, which ranges from Oi microns to 12 microns, and the vertical axis represents the depth of focus when the exposure degree of freedom is fixed at 7%, and its range value is from 0.05 to 60 microns · Figure 13 The curve drawn by connecting all the square marked points is the DOF result of the method of using the scatter bar to modify the graphics method. It is drawn by connecting all the round marked points.

Page 17 1240303 i. Description of the invention (10) The other curve is the DOF result of the method of correcting the pattern using scattering bars and using an exposure method called XTC. The exposure method using XTC can further improve the DOF value. With the D0F value of 40 μm as the allowable lower limit, comparing the two curves, we can find that even if the XTC exposure method is used, the D0F value is still lower than ^ Xu ^, or the pattern pitch is not increased. The graphic pitch is forbidden for this article. It can be seen from the figure that the forbidden pattern pitch range is 〇31 ~ 〇 · 40, micrometer, 0.550 ~ 〇.56 micrometer. So as long as the use of these prohibited pattern pitch sub-ranges is excluded, the DOF value can be further improved by using the χιχ exposure method. It can be concluded from the experimental results that at the exposure wavelength; 1 is 19311111, NA = 0.8, QUASAR30 lighting mode, sigma = 0.8 / (K5 and other lighting settings, the forbidden pattern pitch is about 31〇nm (~ λ / (NA * sigma)). However, the prohibition of the graphic pitch before adding the modified auxiliary graphic is about 45Onm. Furthermore, it is also found that when only one auxiliary graphic is added, the phenomenon of repeated prohibitive graphic pitch will be generated, that is, For example, if the original forbidden pattern pitch is 3 〇ηπι, if a scattering bar correction pattern with the same size as the two patterns is added to the center between two identical patterns with a pattern pitch of 620 nm, each pattern will cause This scattering bar corrects the pattern pitch of 3 10nm between the patterns, which becomes the forbidden pattern pitch. Therefore, it is necessary to consider this phenomenon and carefully choose the method of adding the scattering bar to correct the pattern, so as to avoid repeated generation of prohibited pattern sections. In the above two embodiments, after excluding the prohibition pattern pitch, it can be known that the tolerance limit of the DOF value of the polycrystalline silicon layer and the contact layer is improved, and exceeds 0 at different pattern pitches. 35 microns, to have sufficient for the process. This polysilicon sheet and the CDU also enhanced more than 30%.

Page 18 1240303 V. Description of the invention (U) After identifying the prohibited graphic pitch, you can impose the restriction of graphic graphic prohibition in the design rules, that is, you cannot use the prohibited graphic pitch to draw the line. Exclude the use of forbidden graphics pitch. According to the method of the present invention, the range of the forbidden pattern pitch can be identified and eliminated, which is enough to further improve the CDU and the degree of freedom of the process by using the currently known semiconductor device manufacturing technology and equipment, that is, greatly improve The optical process window enables the common process space to cover the processing of next-generation components with smaller and smaller critical dimensions, and improves the effect of the patterning process and the yield of wafer manufacturing.

Page 19! 24〇3〇3 Brief description of the diagram [Simplified description of 81] 1 The diagram shows the DOF value of a polycrystalline silicon thin layer lithography versus a graph pitch range =-corresponding curve. Figure 2 shows the corresponding curve of Figure 1 after excluding one of the partial curves of the forbidden pitch sub-range. The f 3 diagram is a curve corresponding to a range of a graph pitch after (;: 1) 11 index of a polycrystalline silicon thin layer lithography. Figure 4 shows the corresponding curve in Figure 3 after removing one of the partial curves in the secondary range of the forbidden graphic pitch. ^ 5 is the two corresponding curves of the DOF value to a pattern pitch range after a contact layer lithography. The curve with a higher DOF value represents the use of the XTC exposure method. [Simplified description of component representative symbols] D0F Focus depth CDU Key size consistency micron 1ΕΓβιη = From m NSB No Scattering Bars No Scattering Bar Correction Pattern CSB Center Scattering Bars Scattering Bar Correction Pattern placed in the center of the pattern \ ESB Edge Scattering Bars Set Scattering bars near the edge of a pattern. Correct the pattern. 1 2 0 0 The four bad pattern pitches determined by the sub-range 30 0 302 304 306 Four bad CDU curve areas 400 402 404 406 Four due to bad CDU theta

Page 20 1240303 Simple illustration of the line area

1 ^ 1 p. 21

Claims (1)

1240303 — "Friends .................. ... | ^ ------- Old 丨 丨 丨 丨 丨 六 、 Scope of patent application -----• A way to identify another] out or multiple bad graphic pitches (undesirab 1 e Patches), Suitable for designing a photomask to transfer a photolithographic pattern corresponding to an integrated component from the photomask to a substrate by using a photolithography device. The method includes at least the following steps: (a) at the same exposure Under lighting conditions, a graph is obtained by focusing depth of a plurality of graphs with different graph pitches on the graph section = giant drawing, and some graphs have optical proximity correction (Optical Proximity Correction) graphs; (b) Set at least one allowable lower limit of focus depth according to process results and requirements judgment; and (c) Define one or more bad graphic pitches according to the allowable lower limit identification in the graph. 2. If the scope of patent application The method for discriminating one or more bad pattern pitches described in the above item, wherein the plurality of bad pattern pitches are close and continuous. The shape pitch can be identified as one or more undesirable pitches. 3. The method of identifying one or more undesired pattern pitches as described in item i of the patent application range, where optical The adjacent correction pattern is a correction pattern for scattering bars. 4. The method for discriminating one or more defective pattern pitches as described in item 1 of the scope of patent application, wherein the defects are the same under the same exposure lighting conditions. of 1240303 τ 'application for patent scope The graphic pitch defines that quite destructive light field interference (destructive interference) occurs between the patterns ^ ^ 5 — a method to identify one or more undesired graphic pitches (undesiraMe pitches), applicable to When designing a reticle to transfer a lithographic pattern corresponding to an integrated component from the reticle to a substrate by using a lithographic device, the method includes at least the following steps: (a) under the same exposure lighting conditions Next, the critical dimension uniformity obtained by exposing a plurality of graphs with different graph pitches to the graph pitch to obtain a graph, and some of the graphs have optical proximity correction (Optical Proximity Correction) graphs; (b) Set at least one allowable lower limit of critical dimension consistency according to process results and demand judgments; and (c) Define one or more bad graphic pitches in the graph according to the allowable lower limit identification. 6 · The method for discriminating one or more bad graphic pitches as described in item 5 of the scope of patent application, wherein the close and continuous multiple bad graphic pitches of these bad graphic pitches can be confirmed as one or more Undesirable pitch regions 0 7. The method of discriminating one or more undesired pattern pitches as described in item 5 of the patent claim, wherein the optical proximity correction pattern is a scattering bar Page 23 1240303 Six, the patent application scope (scattering bars) correction graphics. 8. The method of identifying _ or plural pitches as described in item 5 of the scope of the patent application, where the good figure graphic pitch defines the occurrence of quite destructive light field interference between the figures under the same exposure and lighting conditions-good (Destructive interference). 9. · A method for identifying one or more undesirable pitches between graphics, which is suitable for designing an integrated component and forming the integrated component on a substrate by using a lithographic equipment, The method includes at least the following steps: (a) Under the same exposure and lighting conditions, a graph is obtained by plotting the depth of focus of a plurality of patterns with different pattern pitches on the pattern pitch to obtain a graph, and some of the patterns have optical Optical Proximity Correction graphics; (b) Set at least one allowable lower limit of focus depth according to process results and demand judgments; and (c) Define one or more defects in the graph according to the allowable lower limit identification Graphic pitch. 1 0 · The method for discriminating one or more bad pattern pitches between patterns as described in item 9 of the scope of the patent application, wherein the close and continuous multiple bad pattern pitches among the bad pattern pitches can be confirmed as One or more undesirable pitch regions. Page 24 1240303 VI. Application for profit range 11 · The method of discerning graphics as described in item 9 of the scope of patent application: Method of bad graphic pitch, in which the optical proximity correction chart :: correction of two scattering bars Graphics. 1 2 · A method for identifying a bad pattern pitch of a pattern as described in item g of the scope of the patent application, where the exposure lighting conditions ^ and some bad pattern pitches define that relatively destructive light field interference occurs between patterns. ^ (destructive interference). " 1 3 · — A method to identify one or more undesirable pitches between graphics, suitable for designing an integrated component and forming the integrated component on a base by using a lithographic equipment The method includes at least the following steps: (a) Key size consistency obtained by exposing a plurality of patterns with different pattern pitches under the same exposure lighting conditions (critical dimension uniformity) Plot the graph pitch to obtain a graph, some of which have optical proximity correction (Optical Proximity Correction) graph; (b) Set at least one critical dimension uniformity according to process results and demand judgment Lower limit; and (c) define one or more bad pattern pitches in the graph according to the allowable lower limit identification. Page 25 1240303 VI. Patent Application Range 1 4 · The method for discriminating one or more bad pattern pitches between patterns as described in item 13 of the patent application range, wherein the bad pattern pitches are close and continuous The plurality of bad graphic pitches can be identified as one or more bad graphic pitch regions. 15. The method for discriminating one or more bad pattern pitches between patterns as described in item 3 of the patent application scope, wherein the optical proximity correction pattern is a scattering bars correction pattern. 1 6 · The method for discriminating one or more bad graphic pitches between figures as described in item No. 3 of the scope of patent application, wherein the bad graphic pitches define the occurrence between graphics under the same exposure and lighting conditions Where destructive interference is quite destructive. 17 · —A method of identifying one or more undesirable pitches between a pattern and an optical proximity correction pattern, which is suitable for designing an integrated component and using a lithographic device to The body element is formed on a substrate. The method includes at least the following steps: (a) Under the same exposure and lighting conditions, the pattern pitch is obtained by plotting the depth of focus of a plurality of patterns with different pattern pitches on the pattern pitch to obtain a Graphs, some of which have optical proximity correction (Optical Proximity Correction) graphics; (b) set at least one allowable lower limit of focus depth according to process results and demand judgment; and 1240303 on page 26: ............- -ammrrr. ·, ·. • μτγί ^ ι-μρι __ I. Sixth, the scope of patent application ~~~ One ^^---(C) in the graph According to the allowable lower limit identification, one or more bad graphic pitches are defined. 1 8. The method for discriminating one or more bad pattern pitches between a pattern and an optical proximity correction pattern as described in item 7 of the scope of the patent application, wherein close and continuous complex numbers in the bad pattern pitches One bad pattern pitch can be identified as one or more undesiraMe pitch regions. 19. The method for discriminating one or more bad pattern pitches between a pattern and an optical proximity correction pattern as described in item 7 of the scope of the patent application, wherein the optical proximity correction pattern is a scattering bar. Correct graphics. 20. The method for identifying one or more bad pattern pitches between a figure and an optical proximity correction figure as described in item 17 of the scope of the patent application, wherein the bad figure sections are under the same exposure and lighting conditions The distance defines the place where quite destructive interference between the patterns occurs. 21. A method of identifying one or more undesirable pitches between a pattern and an optically adjacent correction pattern, The method is suitable for designing an integrated component and forming the integrated component on a substrate by using a lithographic apparatus. The method includes at least the following steps: 1240303 Case No. 92124938 said Amendment 6. Scope of patent application Where destructive light field interference (d e s t r u c t i ν e interference) occurs between the form ° page 29 ❿