TWI240267B - Optical recordable medium - Google Patents
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- TWI240267B TWI240267B TW92106691A TW92106691A TWI240267B TW I240267 B TWI240267 B TW I240267B TW 92106691 A TW92106691 A TW 92106691A TW 92106691 A TW92106691 A TW 92106691A TW I240267 B TWI240267 B TW I240267B
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- 230000003287 optical effect Effects 0.000 title claims abstract description 43
- 239000000463 material Substances 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000010410 layer Substances 0.000 claims description 235
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 239000010931 gold Substances 0.000 claims description 12
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 230000010363 phase shift Effects 0.000 claims description 3
- 239000011241 protective layer Substances 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 229910000807 Ga alloy Inorganic materials 0.000 claims description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 239000011777 magnesium Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims 1
- 229910000846 In alloy Inorganic materials 0.000 claims 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical group [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- XTPMURFLEDRBCW-UHFFFAOYSA-N bismuth gallium Chemical compound [Ga].[Bi] XTPMURFLEDRBCW-UHFFFAOYSA-N 0.000 claims 1
- MPZNMEBSWMRGFG-UHFFFAOYSA-N bismuth indium Chemical compound [In].[Bi] MPZNMEBSWMRGFG-UHFFFAOYSA-N 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- CRJWFQWLUGZJMK-UHFFFAOYSA-N germanium;phosphane Chemical compound P.[Ge] CRJWFQWLUGZJMK-UHFFFAOYSA-N 0.000 claims 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- 239000010948 rhodium Substances 0.000 claims 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims 1
- -1 surface Substances 0.000 claims 1
- 150000003568 thioethers Chemical class 0.000 claims 1
- 239000011135 tin Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- 230000003667 anti-reflective effect Effects 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 11
- 239000000975 dye Substances 0.000 description 9
- 229920000515 polycarbonate Polymers 0.000 description 9
- 239000004417 polycarbonate Substances 0.000 description 9
- 238000002310 reflectometry Methods 0.000 description 9
- 238000012360 testing method Methods 0.000 description 8
- 238000012546 transfer Methods 0.000 description 8
- 239000002131 composite material Substances 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 5
- 239000002210 silicon-based material Substances 0.000 description 5
- GGCHXCZGMDRXPH-UHFFFAOYSA-N [Si+2]=O.[S-2].[Zn+2].[S-2] Chemical compound [Si+2]=O.[S-2].[Zn+2].[S-2] GGCHXCZGMDRXPH-UHFFFAOYSA-N 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 239000011257 shell material Substances 0.000 description 2
- 229910016334 Bi—In Inorganic materials 0.000 description 1
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- 235000011483 Ribes Nutrition 0.000 description 1
- 241000220483 Ribes Species 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 210000000614 rib Anatomy 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- WLTSUBTXQJEURO-UHFFFAOYSA-N thorium tungsten Chemical compound [W].[Th] WLTSUBTXQJEURO-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Landscapes
- Optical Record Carriers And Manufacture Thereof (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
Abstract
Description
1240267 __案號 92106691 年月日_____ 五、發明說明(1) 發明所屬之技術領域 本發明是有關於一種光學式可記錄媒體(Opt i cal Recordable Media)的結構及其記錄方法,特別是有關於 一種利用無機材料所製造的光碟片,適用於以光學式的方 法記錄資料。 先前技術 可記錄式碟片(Recordable Disc)由於具有儲存容量大、 保存容易、成本低廉等優點,已逐漸取代一般傳統的磁性 儲存媒體而成為現代人不可或缺的儲存媒體之一。習知的 可記錄式碟片係以有機染料來形成一可記錄層,有機染料 會吸收特定波長的光線而發生轉變,因此,可以利用此一 特定波長的光束將資料寫入。但是,利用有機染料形成的 α己錄層會不斷的吸收到特定波長的光線,而慢慢的發生轉 換。因此,利用有機染料製作的可記錄式碟片的壽^有 限、,而且,特別是曝曬到太陽光或包含特定波長的光線的 光源的時候,可記錄式碟片的壽命更會縮短。 =此之外,有機染料尚存在兩個問題,那就對於運用到高 欲度責料記錄及高寫入速度碟片的適用性。在欲提高碟片 :貝料β己載推度時,溝槽/平坦面(Gr〇〇ve/Land 均需 I乍,這對分子尺寸大的有機染料而言,以旋塗1240267 __Case No. 92106691 _____ V. Description of the Invention (1) Field of the Invention The present invention relates to the structure of an optical recordable medium (Opt i cal Recordable Media) and a recording method thereof, particularly The invention relates to an optical disc made of inorganic materials, which is suitable for optically recording data. The prior art Recordable Discs have the advantages of large storage capacity, easy storage, and low cost. They have gradually replaced the traditional magnetic storage media and become one of the indispensable storage media for modern people. The conventional recordable disc uses an organic dye to form a recordable layer. The organic dye absorbs light of a specific wavelength and changes. Therefore, data can be written by using the light of a specific wavelength. However, the α-Hydraulic layer formed with organic dyes will continuously absorb light of a specific wavelength, and slowly convert. Therefore, the life of recordable discs made of organic dyes is limited, and especially when exposed to sunlight or a light source containing light of a specific wavelength, the life of recordable discs is shortened. In addition, there are still two problems with organic dyes, that is, their applicability to high-definition data recording and high-write speed discs. When you want to increase the beta of the disc: shell material β, the groove / flat surface (Gr00ve / Land all need to be first). For organic dyes with large molecular sizes, spin coating is used.
Coat ing)的方式將有機染料塗佈於溝槽之内相當的困難。Coat ing) method is very difficult to apply organic dyes into the grooves.
i涵STi 涵 ST
=案號mmm 五、發明說明(2) 二:丄更f的資料記錄密度也需要更快速的記錄速度來加 二是,對有機染料而言,因此在高速度記載資料 貝料的穩定性間取得平衡是相當的困難。因此,一 :二2 =材料被發展出來製造可記錄式碟片的記錄層,以 有機染料碟片在提高資料記載密度和提高記載速度 上所遇到的瓶頸。 無,=材料所形成的記錄層不是以特定波長的光束照射而 進打資料的寫入,係以光束中的能量使無機材料產生相變 化而進行資料的記錄。例如美國專利第445 1 9 1 4號及第 4 4 5 1 9 1 5號所揭露的’利用寫入雷射光束在其有反射性質 之記錄層上形成一個洞,而形成了抗反射位置的熔損式 (Abl at ion)可記錄式碟片。又例如美國專利第4499 1 78號 所揭露的利用兩層含不同金屬之材質,在雷射的照射下形 成一合金而改變反射特性的雙層合金法(A1 loy ing of Bi layer)。再例如美國專利第5 1 88923號所揭露的在基底 上方形成不連續島狀的金屬層,在未寫入資料的部分係為 抗反射狀態,以一雷射光束進行資料的寫入,不連續島狀 的金屬層會連結而形成一強反射的金屬層。 如美國專利第4 4 5 1 9 1 4號及第4 4 5 1 9 1 5號所揭露的一熔損式 可記錄式碟片的記錄方式係在記錄層上以雷射燒熔出孔洞 _ 來寫入資料。原位於孔洞位置的記錄層的材質堆積於孔洞 兩側的記錄層之上而形成凸起。記錄層係為一反射層,孔 洞形成一穿透的位置,凸起無法如記錄層般的均勻反射, 會有散射的情形,這樣在資料的判讀上會產生困難’且易= Case No. mmm V. Description of the invention (2) II: More data recording density also requires faster recording speed to increase. Second, for organic dyes, therefore, the stability of the materials recorded at high speeds. Getting the balance is quite difficult. Therefore, one: two, two = materials have been developed to make recordable discs as recording layers, and organic dye discs have encountered bottlenecks in increasing data recording density and speed. None, = The recording layer formed by the material is not irradiated with a beam of a specific wavelength to write data, but records the data by phase change of the inorganic material with the energy in the beam. For example, U.S. Patent Nos. 445 1 9 1 4 and 4 4 5 1 9 1 5 disclose the use of a written laser beam to form a hole in a reflective recording layer, thereby forming an anti-reflection site. Abl at ion recordable disc. Another example is U.S. Patent No. 4,499,78, which discloses a two-layer alloy method (A1 loying of Bi layer) that uses two layers of materials containing different metals to form an alloy under laser irradiation to change the reflection characteristics. Another example is the formation of a discontinuous island-shaped metal layer over the substrate disclosed in US Patent No. 5 1 88923. The part where data is not written is in an anti-reflective state. The data is written by a laser beam, which is discontinuous. The island-like metal layers are connected to form a strongly reflective metal layer. As shown in U.S. Patent Nos. 4 4 5 1 9 1 4 and 4 4 5 1 9 1 5 the recording method of a melt-loss recordable disc is to burn holes on the recording layer by laser burning. To write data. The material of the recording layer originally located at the hole position is stacked on the recording layer on both sides of the hole to form a bump. The recording layer is a reflective layer. The holes form a penetrating position. The protrusions cannot be reflected uniformly like the recording layer. There will be scattering. This will make it difficult to interpret the data.
第7頁 i 1240267Page 7 i 1240267
92106691 五、發明說明(3) 出現錯誤。 美國專利第44991 78路的雙層合金法所需要的寫入处― 達200毫瓦至400毫瓦’目前一般所使用的讀寫機均^量高 供如此高的能量,而習知所使用的其他材料亦 “、、’提 此高能量的寫入模式。 計方不適用於如 美國專利第5 1 8 8 9 2 3號所揭露的將不連續島狀的金芦、、 融形成具有反射性之金屬層,雖然寫入資料所需'的处旦' 高,但是尚有其他問題。此專利中所揭露的碟片其=== 態係為抗反射態,資料寫入後轉成強反射態,而一= 圯錄式碟片的設計係為在未寫入資料時為強反射性 '二 料寫入係以光束破壞其反射性而和原來的狀況產去差里貝 :般的可記錄式碟片優點係為在碟片完成後極易檢測碟^ y具有瑕疵,若出現抗反射的部位即表示碟片有瑕疵, I加以淘汰。美國專利第5 1 88923號所揭露的碟片之反射 闲2正好和習知相反,如此一來碟片瑕疵的檢測變得相當 =,這也是目前市場上販售的可記錄式碟片在未寫入資 '時均為強反射性質的原因。 習知的缺點,其實是目前以無機材料製造的可記錄式 記無法同時克服這些缺點,就此,本發明所揭露的可 、、ς式碟片結構及記錄方法即在克服上述習知的缺點。 發明内容 由於目前以無機材料製造的可記錄式碟片均無法同時克服92106691 V. Description of the invention (3) An error occurred. U.S. Patent No. 44991 78-Way Double-Layer Alloy Method Writes-Up to 200 milliwatts to 400 milliwatts Other materials of the "", "'mention this high-energy writing mode. The formula is not applicable to the discontinuous island-like gold reed, as disclosed in US Patent No. 5 1 8 8 9 2 3 Although the reflective metal layer has a high level of processing, but there are still other problems. The disc disclosed in this patent has an anti-reflective state. After the data is written, it is converted into Strong reflection state, and the design of the first = recording disc is strongly reflective when no data is written. The second material writing system destroys its reflectivity with a light beam and produces poor Ribes as before: The advantage of the recordable disc is that it is very easy to detect that the disc is defective after the disc is completed. If there is an anti-reflection part, it indicates that the disc is defective, and I will eliminate it. U.S. Pat. The reflection of the disc is just the opposite of the conventional one. In this way, the detection of disc defects becomes quite =, This is also the reason why the recordable discs currently on the market are highly reflective when they are not written. The conventional disadvantage is that currently recordable discs made of inorganic materials cannot overcome these disadvantages at the same time. In this regard, the disclosed disc structure and recording method disclosed in the present invention overcome the above-mentioned shortcomings. SUMMARY OF THE INVENTION As the recordable discs currently made of inorganic materials cannot be overcome at the same time.
第8頁 1240267Page 8 1240267
這些缺點’有鑑於此,本發明 記錄媒體及其記錄方式,可以 配膜層設計,可達到可寫入一 各項之缺點。 的目的在提供一種光學式可 利用一般光學鍍膜材料及搭 次之目的’同時不具有前述 本發明的另"目的在提供-^ Ά Jb —^ 1 _ 捉仏種尤學式可記錄媒體及其記錄 方式,可以以低能量的光束進行寫入的動作。 本ί明的:二目的在提供一種光學式可記錄媒體及其記錄 方式,可符合現行光碟機(CD_R或DVD_R)2讀寫規格及未 來更高密度的光記錄媒體之需求。 本發明的再一目&在提供一種光學式可記錄媒體及其記錄 方式,具有咼反射性、低寫入功率、高信號調變(HighIn view of these disadvantages, the recording medium and the recording method of the present invention can be provided with a film layer design, and can achieve the disadvantages of writing a single item. The purpose of the present invention is to provide an optical type that can use common optical coating materials and the purpose of 'while not having the above-mentioned invention.' The purpose is to provide-^ Ά Jb — ^ 1 _ catching a special type of recordable media and In the recording method, the writing operation can be performed with a low-energy light beam. What this document states: The second purpose is to provide an optical recordable medium and its recording method, which can meet the current optical disc drive (CD_R or DVD_R) 2 read-write specifications and the requirements of higher density optical recording media in the future. Another object of the present invention is to provide an optical recordable medium and a recording method thereof, which have a high reflectivity, low write power, and high signal modulation.
Signal Modulation)且和習知的碟片具有相同的調變極性 (Modulation Polarity) 本發明所提供的一種光學式可記錄媒體,請參照第丨圖, 第1圖係緣示根據本發明所揭露之光學式可記錄媒體之剖 面示意圖。此一光學式可記錄媒體至少具有一記錄層 2 0 0。記錄層2 0 0結構位於一透明基底2 〇 2之上,依序包括 透明層204、半反射層206、介電層208、反射層210以及材 質層212。其中,透明層204的材質可以為金屬、金屬合 金半導體材料、金屬填化物及金屬神化物。透明層204 的材質特別可以係選自於石夕、錯、填化錯、鱗化銦、珅化 嫁、坤化銦、鉍鎵合金、鉍銦合金及其任意組和所組成之 族群。透明層2 0 4的厚度約介於1奈米至2 0 0奈米之間。 而半反射層2 0 6的材質可以為金屬,特別是可以選自於(Signal Modulation) and has the same modulation polarity (Modulation Polarity) as the conventional disc. An optical recordable medium provided by the present invention, please refer to FIG. 丨, FIG. 1 is a diagram showing the disclosure according to the present invention. A schematic cross-sectional view of an optical recordable medium. The optical recordable medium has at least one recording layer 200. The recording layer 2000 structure is located on a transparent substrate 202, and includes a transparent layer 204, a semi-reflective layer 206, a dielectric layer 208, a reflective layer 210, and a material layer 212 in this order. Among them, the material of the transparent layer 204 may be metal, metal alloy semiconductor material, metal filler, and metal god. The material of the transparent layer 204 may be selected from the group consisting of Shi Xi, Xing, Xing Xing, Indium, Halide, Indium, Bi-Ga alloy, Bi-In alloy, and any group thereof. The thickness of the transparent layer 204 is between about 1 nm and 200 nm. The material of the semi-reflective layer 2 06 can be metal, and in particular, can be selected from
1240267 五、發明說明(5) i號 921066911240267 V. Description of the invention (5) i 92106691
銀、:、金、鉻、•、銦、銥、 叙、鶴、发杯立 ”麵、鍊、姥、錫、 半反射層^晟声的入之σ金及其任意組和所組成之族群。 的材質= 米至100奈米之間。反射層21〇 絡、銅、銦、銥、鎳、銘、鍊、㈡於f、銘、金乂 組和之合金及其任意組和所组成之族冑鎢、其任思 度介於1奈米至30 0奈米之間、。成之族群。反射層210的厚 ί外鎂介=1材質則係選自於辞、銘、銦、錫、 石夕之氧化物、硫化物及直 。以212Γ……保護 媒i寫入-V/J圖係繪示本發明所揭露之光學式可記錄 的剖面示意圖。當-寫入光束3。。照射記 層30 6與透明層3°4會因寫入光束帶人 成:、止成祐’生成半反射層314。♦反射層314之生 之反射特‘。、肖射時產生光波之相位移而反轉記錄層 供的一種光學式可記錄媒體,④寫入光束所需 m毫瓦至3〇毫瓦之間1所設計材質層的厚度 2^己錄層的反射率介於0.2至0 6 5之^寫= 調變最大可達〇.6以上。而載體_雜訊比(carrier_N〇i= Ratio)均可在40dB以上’ _般而言可以達到6〇dB。Silver,:, gold, chromium, •, indium, iridium, Syria, crane, hair cup standing surface, chain, osmium, tin, semi-reflective layer . Material = between 100 and 100 nanometers. Reflective layer 21 °, copper, indium, iridium, nickel, inscription, chain, alloy of f, inscription, gold, and alloy, and any group and composition The group of thorium tungsten, its degree of thought is between 1 nanometer and 300 nanometers. It is a group. The thickness of the reflective layer 210 and the outer magnesium medium = 1 material are selected from the group consisting of Ci, Ming, Indium, and Tin. , Shi Xi's oxide, sulfide, and straight. Protective medium i is written with 212Γ ...- V / J is a schematic diagram showing the optically recordable cross-section of the present invention. When-writing beam 3. The irradiation recording layer 30 6 and the transparent layer 3 ° 4 will be artificially caused by the writing beam: Zhi Chengyou 'generates a semi-reflective layer 314. ♦ The reflection characteristics of the reflection layer 314's life.' An optical recordable medium provided by a displacement and reverse recording layer, ④ between m milliwatts and 30 milliwatts required for writing a light beam 1 thickness of the designed material layer 2 ^ reflectivity of the recorded layer is 0.2 065 = write modulator ^ of up 〇.6 above. _ And the carrier to noise ratio (Ratio = carrier_N〇i) can be found in more than 40dB '_ In general 6〇dB achieved.
f〜-·-...............................1 ^—- —·——案號 921_Q_1__年 3 日 修 ^_ 五、發明說明(6) 本發明所利用的原理係為一光束對不同厚度的材質層會有 不同的穿透(反射)率。當半反射層3〇6與透明層3〇4會因寫 入光束帶入之能量而發生反應,生成半反射層314,對讀 取光束而言’在未寫入資料的部分,讀取光束照射時分別 會在反射層310、半反射層30 6及透明層304產生反射。在 寫入資料的部分’僅在半反射層3丨4和反射層3丨〇產生反 射。半反射層31 4之生成和位於其下之介電層3〇 8的厚度總 和而造成讀取光束照射時產生光波之相位移而反轉記錄層 之反射特性。 為改善記錄膜層之熱傳特性,以降低記錄點之錯誤判斷 率,可於透明層前先鍍上一層介電材質層,以調整記錄時 之熱傳模式。 再者’為了提高記錄層之反射率,更可於透明層前佳鍍一 層半透反射層,藉以達到提高記錄層反射率的目標。 除此之外’更可以在介電層與半反射層間形成一透明層, 此一新增之透明層亦能達成改善記錄膜層之熱傳特性,以 降低記錄點之錯誤判斷率之功效。 本發明所揭露的各個材料層的厚度可依需要而做調整,本 發明的特徵係在於因寫入光束照射而新生成的反射層和位 &其下方之介電層的厚度總和會造成讀取光束照射時產生 $波之相位移而反轉記錄層之反射特性。因此,上述所揭 ^的範圍僅為例式而已,例如,可以調整各個材質層的厚 f而使碟片在未記載資料時為抗反射或低反射的狀態,在 貝料寫入之後成為強反射的狀態,而其寫入光束之功率可f ~-· -............................ 1 ^ —- — · ——Case No. 921_Q_1__year 3 Ri Xiu __ V. Description of the invention (6) The principle used in the present invention is that a light beam has different transmittance (reflectivity) for different thickness material layers. When the semi-reflective layer 306 and the transparent layer 304 react due to the energy carried by the writing beam, a semi-reflective layer 314 is generated. For the reading beam, 'the reading beam is in the part where the data is not written. During irradiation, reflections are generated in the reflective layer 310, the semi-reflective layer 306, and the transparent layer 304, respectively. In the part where the data is written, reflection occurs only in the semi-reflective layer 3 and 4 and the reflective layer 3 and 0. The sum of the thickness of the semi-reflective layer 31 4 and the thickness of the dielectric layer 308 located thereunder results in a phase shift of the light wave when the reading beam is irradiated, and the reflection characteristics of the recording layer are inverted. In order to improve the heat transfer characteristics of the recording film layer and reduce the false judgment rate of the recording points, a layer of dielectric material can be plated before the transparent layer to adjust the heat transfer mode during recording. Furthermore, in order to improve the reflectivity of the recording layer, a transflective layer can be better plated in front of the transparent layer, so as to achieve the goal of improving the reflectivity of the recording layer. In addition, a transparent layer can be formed between the dielectric layer and the semi-reflective layer. This new transparent layer can also achieve the effect of improving the heat transfer characteristics of the recording film layer and reducing the false judgment rate of the recording points. The thickness of each material layer disclosed in the present invention can be adjusted as needed. The feature of the present invention is that the sum of the thickness of the reflective layer and the bit & When the light beam is irradiated, a phase shift of $ waves is generated and the reflection characteristics of the recording layer are inverted. Therefore, the ranges disclosed above are just examples. For example, the thickness f of each material layer can be adjusted to make the disc in an anti-reflective or low-reflective state when no data is recorded, and become strong after the shell material is written. Reflected state, and the power of its writing beam can be
第11頁 124026^ MM 92106691 五、發明說明(7) 低至1毫瓦。而所需各材質層的厚度,就可能不在前述之 範圍之内,但此仍屬於本發明所揭露的專利範圍。 實施方式 為了讓本發明所提供之光學式可記錄媒體及其記錄方法更 為清楚’茲提供一些較佳實施例說明如下。 實施例1 請參照第1圖,此一光學式可記錄媒體至少具有一記錄層 2 0 0。記錄層2 0 0位於透明基底202之上,其結構依序包括 透明層204、半反射層206、介電層208、反射層210以及材 質層2 1 2。其中,透明基底2 0 2係為厚度約1 · 2釐米的聚破 酸酯(P C)基底。透明層2 0 4係為厚度約1 〇奈米至1 〇 〇奈米的 矽材質薄層。半反射層2 0 6係為厚度7奈米至3 0奈米之金金 屬層。介電層2 0 8係為厚度1 0奈米至1 5 0奈米之硫化鋅一氧 化矽複合薄層。反射層2 1 0為厚度約1 〇奈米至1 〇 〇奈米之鋁 金屬薄層。材質層21 2係為一保護層。 以市售的讀寫光束波長780奈米讀寫式光碟機進行電氣特 性測試(Dynamic Test),以4倍速的速度進行寫入,寫 入的功率在1 4毫瓦至2 0毫瓦之間。結果發現記錄層的反射 率介於0 · 2至0 · 6 5之間,調變最大可達〇 · 6以上。另外,由 測試中發現,如上述之碟片之載體-雜訊比均可在45dB以Page 11 124026 ^ MM 92106691 V. Description of the invention (7) As low as 1 mW. The required thickness of each material layer may not be within the foregoing range, but this still belongs to the patent scope disclosed by the present invention. Embodiments In order to make the optical recordable medium and the recording method thereof provided by the present invention clearer, some preferred embodiments are provided as described below. Embodiment 1 Referring to FIG. 1, this optical recordable medium has at least one recording layer 2 0. The recording layer 200 is located on the transparent substrate 202, and its structure includes a transparent layer 204, a semi-reflective layer 206, a dielectric layer 208, a reflective layer 210, and a material layer 2 1 in order. Among them, the transparent substrate 202 is a poly (ester) substrate having a thickness of about 1.2 cm. The transparent layer 204 is a thin layer of silicon material having a thickness of about 100 nm to 100 nm. The semi-reflective layer 2 0 6 is a gold metal layer with a thickness of 7 nm to 30 nm. The dielectric layer 208 is a zinc sulfide-silicon oxide composite thin layer having a thickness of 10 nm to 150 nm. The reflective layer 210 is a thin aluminum metal layer having a thickness of about 10 nm to 100 nm. The material layer 21 2 is a protective layer. A commercially available read and write beam wavelength of 780 nanometers is used for electrical test (Dynamic Test), writing is performed at 4 times the speed, and the writing power is between 14 milliwatts and 20 milliwatts. . As a result, it was found that the reflectivity of the recording layer was between 0.2 · 2 and 0 · 65, and the maximum modulation was above 0.6. In addition, it was found in the test that the carrier-to-noise ratio of the discs described above can be within 45dB.
_案號 92106691 五、發明說明(8) 主月日__隻正 上 實施例2_ Case No. 92106691 V. Description of the invention (8) The main month day __ Only positive on Example 2
請參照第1圖,此一光學式可記錄媒體至少具有—記錄層 200。記錄層20 0位於透明基底20 2之上,其結構依序包括 透明層204、半反射層206、介電層208、反射層21〇以及材 質層2 1 2。其中,透明基底2 0 2係為厚度約〇 · 6釐米的聚碳 酸酯(PC)基底。透明層2 04係為厚度約1 〇奈米至j 〇 〇奈米的 矽材質薄層。半反射層2 0 6係為厚度約7奈米至3 〇奈米的金 金屬薄層。介電層2 0 8係為厚度約1 〇奈米至1 5 0奈米的硫化 鋅-氧化矽複合薄層,介電層2 0 8亦可為一有機介電材質。 反射層2 1 0係為厚度約1 0奈米至1 〇 〇奈米的鋁金屬薄層。材 質層2 1 2亦為厚度約〇 · 6釐米的聚碳酸酯(pc)基底。 以Pulsetech DDU- 1 0 0 0,以1倍速的速度進行寫入來進行 電氣特性測試,讀寫光束波長65 0奈米,寫入的功率在1 1 毫瓦至2 0毫瓦之間。結果發現記錄層的反射率介於〇. 2至 0 · 6 5之間’調變最大可達〇 · 6以上。另外,由測試中發 現,如上述之碟片之載體—雜訊比均可在6 〇 dB以上。Referring to FIG. 1, this optical recordable medium has at least a recording layer 200. The recording layer 200 is located on the transparent substrate 202, and its structure includes a transparent layer 204, a semi-reflective layer 206, a dielectric layer 208, a reflective layer 21, and a material layer 2 12 in this order. The transparent substrate 202 is a polycarbonate (PC) substrate having a thickness of about 0.6 cm. The transparent layer 204 is a thin layer of a silicon material having a thickness of about 100 nm to about 100 nm. The semi-reflective layer 206 is a thin gold metal layer with a thickness of about 7 nm to 30 nm. The dielectric layer 208 is a zinc sulfide-silicon oxide composite thin layer having a thickness of about 10 nm to 150 nm. The dielectric layer 208 may also be an organic dielectric material. The reflective layer 2 10 is a thin aluminum metal layer having a thickness of about 10 nm to 100 nm. The material layer 2 1 2 is also a polycarbonate (pc) substrate having a thickness of about 0.6 cm. The electrical characteristics were tested using Pulsetech DDU- 1 0 0 0 at a speed of 1x. The read and write beam wavelength was 650 nm, and the power of the write was between 11 mW to 20 mW. As a result, it was found that the reflectance of the recording layer is between 0.2 and 0.65, and the modulation can reach a maximum of 0.6 or more. In addition, it was found in the test that the carrier-to-noise ratio of the above-mentioned discs can be more than 60 dB.
實施例3 請參照第1圖’此一光學式可記錄媒體至少具有一記錄層 2 0 0。記錄層2 0 0位於透明基底2 〇 2之上,其結構依序包括Embodiment 3 Please refer to FIG. 1 'This optical recordable medium has at least one recording layer 200. The recording layer 2 0 is located on the transparent substrate 2 2, and its structure includes
第13頁 1240267Page 13 1240267
五、發明說明(9) 透明層2 04、半反射層2 0 6。介電層2 0 8、反射層210以及材 質層212。其中,透明基底2 0 2係為厚度約i 2釐米的聚碳 酸S旨(P C)基底。透明層2 0 4係為厚度約1 〇奈米至1 〇 〇奈米的 ♦材質薄層。半反射層2 0 6係為厚度約7奈米至3 0奈米的金 金屬薄層。介電層2 0 8係為厚度約1 〇奈米至1 5 〇奈米的硫化 鋅-氧化矽複合薄層。反射層2 1 0厚度約1 〇奈米至1 〇 〇奈 米’而反射層210的材質係選自於銀、鋁、金、銅、其任 意組和之合金及其任意組和所組成之族群。材質層2丨2係 為一保護層。V. Description of the invention (9) Transparent layer 204 and semi-reflective layer 206. The dielectric layer 208, the reflective layer 210, and the material layer 212. The transparent substrate 202 is a polycarbonate substrate (PC) having a thickness of about 2 cm. The transparent layer 204 is a thin layer of a material having a thickness of about 100 nm to 100 nm. The semi-reflective layer 206 is a thin gold metal layer with a thickness of about 7 nm to 30 nm. The dielectric layer 208 is a zinc sulfide-silicon oxide composite thin layer having a thickness of about 10 nm to 150 nm. The thickness of the reflective layer 210 is about 100 nm to 100 nm, and the material of the reflective layer 210 is selected from the group consisting of silver, aluminum, gold, copper, any combination thereof, and any combination thereof. Ethnic group. The material layer 2 丨 2 is a protective layer.
以市售的讀寫光束波長780奈米讀寫式光碟機進行電氣特 性測試,以4倍速的速度進行寫入,寫入的功率在丨丨毫瓦 至2 0毫瓦之間。結果發現記錄層的反射率介於〇 . 2至〇 . 6 5 之間,調變最大可達0 · 6以上。另外,由測試中發現,如 上述之部分測試碟片之載體-雜訊比均可在45dB以上,最 高者可達64dB。 實施例4 請參照第3圖,此一光學式可記錄媒體至少具有一記錄層 4 0 0。記錄層4 0 〇位於透明基底4 0 2之上,其結構依序包括 介電層403、透明層404、半反射層406、介電層408、反射 層410以及材質層412。其中,透明基底402係為厚度約〇. 6 釐米的聚碳酸酯(PC)基底。透明層404係為厚度約1〇奈米 至1 0 0奈米的矽材質薄層。半反射層4 0 6係為厚度約7奈米Electrical characteristics were tested using a commercially available read-write beam wavelength of 780 nanometers, and writing was performed at 4x speed. The writing power was between 丨 丨 milliwatts and 20 milliwatts. As a result, it was found that the reflectivity of the recording layer was between 0.2 and 0.65, and the maximum modulation was above 0.6. In addition, it was found in the test that the carrier-to-noise ratio of some of the test discs mentioned above can be above 45dB, and the highest can reach 64dB. Embodiment 4 Referring to FIG. 3, this optical recordable medium has at least one recording layer 400. The recording layer 400 is located on the transparent substrate 402, and its structure sequentially includes a dielectric layer 403, a transparent layer 404, a semi-reflective layer 406, a dielectric layer 408, a reflective layer 410, and a material layer 412. The transparent substrate 402 is a polycarbonate (PC) substrate having a thickness of about 0.6 cm. The transparent layer 404 is a thin layer of silicon material having a thickness of about 10 nm to 100 nm. The semi-reflective layer 4 0 6 is about 7 nm thick
第14頁 mpm 袁號 92106691 年月 j___修正 五、發明說明(10) 至30奈米的金金屬薄層。介電層4〇8係為厚度約〗〇奈米至 1 5 0奈米的硫化辞-氧化矽複合薄層,介電層4 〇 8亦可為一 有機介電材質。反射層410係為厚度約1〇奈米至ι〇〇奈米的 紹金屬薄層。材質層41 2亦為厚度約〇· 6釐米的聚碳酸酯 (PC)基底。 其中介電層40 3的功能係在改善記錄膜層之熱傳特性,以 調整記錄時之熱傳特性。介電層403之材料與介電層4〇8相 同’但厚度介於約5奈米至2 0 0奈米之間。Page 14 mpm Yuan No. 92106691 j___ Amendment V. Description of invention (10) to 30nm gold metal thin layer. The dielectric layer 408 is a sulfide-silicon oxide composite thin layer with a thickness of about 100 nm to 150 nm. The dielectric layer 408 may also be an organic dielectric material. The reflective layer 410 is a thin metal layer having a thickness of about 10 nm to 100 nm. The material layer 41 2 is also a polycarbonate (PC) substrate having a thickness of about 0.6 cm. The function of the dielectric layer 403 is to improve the heat transfer characteristics of the recording film layer to adjust the heat transfer characteristics during recording. The material of the dielectric layer 403 is the same as that of the dielectric layer 408 'but the thickness is between about 5 nm and 200 nm.
以Pul setech DDU-1〇〇〇,以1倍速的速度進行寫入來進行 電氣特性測試,讀寫光束波長6 5 0奈米,寫入的功率在j j 毫瓦至2 0毫瓦之間。結果發現記錄層的反射率介於〇 · 2至 0 · 6 5之間’調變最大可達〇 · 6以上。而其記錄點之單位長 度散佈率(Jitter)較實施例2中的記錄層下降〇. 5 —2%。 實施例5The electrical characteristics were tested by performing write at a speed of 1x with Pul setech DDU-1OO. The read and write beam wavelength was 650 nm, and the power of the write was between j j milliwatts and 20 milliwatts. As a result, it was found that the reflectance of the recording layer is between 0.2 to 0.65 and the modulation can reach a maximum of 0.6 or more. And the unit length spread rate (Jitter) of its recording points is 0.5-2% lower than that of the recording layer in Example 2. Example 5
請參照第4圖,此一光學式可記錄媒體至少具有一記錄層 5 0 0。記錄層5 0 0位於透明基底5 0 2之上,其結構依序包^ 半反射層503、透明層5〇4、半反射層506、介電層5〇8、反 射層510以及材質層512。其中,透明基底5〇2係為厚度約 、〇 · 6釐米的聚碳酸酯(PC)基底。透明層5 〇4係為厚度約i 〇奈 ,至1 0 0奈米的矽材質薄層。半反射層5 〇 6係為厚度約7奈 米至30奈米的金金屬薄層。介電層508係為厚度約1〇奈米 至150奈米的硫化鋅-氧化矽複合薄層,介電層5〇8亦;^為Referring to FIG. 4, this optical recordable medium has at least one recording layer 500. The recording layer 500 is located on the transparent substrate 502, and its structure sequentially includes a semi-reflective layer 503, a transparent layer 504, a semi-reflective layer 506, a dielectric layer 508, a reflective layer 510 and a material layer 512 . The transparent substrate 502 is a polycarbonate (PC) substrate having a thickness of about 0.6 cm. The transparent layer 504 is a thin layer of silicon material having a thickness of about 100 nm to 100 nm. The semi-reflective layer 506 is a thin layer of gold metal having a thickness of about 7 nm to 30 nm. The dielectric layer 508 is a zinc sulfide-silicon oxide composite thin layer having a thickness of about 10 nm to 150 nm, and the dielectric layer 508 is also ^;
第15頁 1240267Page 15 1240267
一有機介電材質。反射層51 〇係為厚度約i 〇奈米至i 〇〇奈米 的鋁金屬薄層。材質層51 2亦為厚度約〇· 6釐米的π'酸 酉旨(P C)基底。 其中半反射層5 0 3的功能係在提高記錄膜層之反射率,以 調整記錄時之熱傳特性。半反射層5 〇 3之材料與半反射層 5 0 6相同,但厚度介於約5奈米至1 〇 〇奈米之間。' 曰 以Pulsetech DDU- 1 0 0 0,以1倍速的速度進行寫入來進行 電氣特性測試’讀寫光束波長6 5 0奈米,寫入的功率在n 毫瓦至2 0毫瓦之間。結果發現記錄層的反射率較實施例2 Φ 中之5己錄層的反射率提咼〇·〇 3至〇. 1 〇,其信號調變最大可 達0 · 6以上。 實施例6 請參照第5圖’此一光學式可記錄媒體至少具有一記錄層 6 0 0。記錄層6 0 0位於透明基底6 0 2之上,其結構依序包括 透明層604、半反射層606、透明層607、介電層6〇8、反射 層6 1 0以及材質層6 1 2。其中,透明基底6 0 2係為厚度約〇 ·( 釐米的聚碳酸酯(PC)基底。透明層6 0 4係為厚度約1 〇奈米 至1 0 0奈米的矽材質薄層。半反射層6 0 6係為厚度約7奈米 至3 0奈米的金金屬薄層。介電層6 0 8係為厚度約1 〇奈米至 1 5 0奈米的硫化辞-氧化矽複合薄層,介電層6 〇 8亦可為一 有機介電材質。反射層6 1 0係為厚度約1 〇奈米至1 〇 〇奈米的 鋁金屬薄層。材質層6 1 2亦為厚度約〇 · 6釐米的聚碳酸酯An organic dielectric material. The reflective layer 51 0 is a thin aluminum metal layer having a thickness of about 100 nm to 100 nm. The material layer 51 2 is also a π'acid base (P C) substrate having a thickness of about 0.6 cm. The function of the semi-reflective layer 503 is to improve the reflectivity of the recording film layer to adjust the heat transfer characteristics during recording. The material of the semi-reflective layer 503 is the same as that of the semi-reflective layer 506, but the thickness is between about 5 nanometers and 100 nanometers. 'Said to use Pulsetech DDU- 1 0 0 0, write at 1x speed for electrical characteristics test' read and write beam wavelength 650 nm, write power between n milliwatts to 20 milliwatts . As a result, it was found that the reflectance of the recording layer was improved from 0.35 to 0.10 compared with the reflectance of the 5th recorded layer in Example 2 Φ, and its signal modulation could reach a maximum of 0.6 or more. Embodiment 6 Please refer to FIG. 5 'This optical recordable medium has at least one recording layer 600. The recording layer 6 0 0 is located on the transparent substrate 60 2, and its structure sequentially includes a transparent layer 604, a semi-reflective layer 606, a transparent layer 607, a dielectric layer 608, a reflective layer 6 1 0, and a material layer 6 1 2 . The transparent substrate 600 is a polycarbonate (PC) substrate having a thickness of about 0.1 cm. The transparent layer 604 is a thin layer of silicon material having a thickness of about 100 nm to 100 nm. Half The reflective layer 6 0 6 is a thin gold metal layer having a thickness of about 7 nm to 30 nm. The dielectric layer 6 0 8 is a sulfide-silicon oxide compound having a thickness of about 10 nm to 150 nm. The thin layer, the dielectric layer 608 may also be an organic dielectric material. The reflective layer 6 10 is a thin aluminum metal layer having a thickness of about 100 nm to 100 nm. The material layer 6 12 is also Polycarbonate with a thickness of about 0.6 cm
第16頁 Ι24Θ2校7Page 16 Ι24Θ2 School 7
(pc)基底。 其中透明層6 Ο 7的功能係在改善記錄膜層之熱傳特性 調整記錄時之熱傳特性。透明層6 〇 7之材料與透明層 同,但厚度介於約5奈米至5 0奈米之間。 9 以Pulsetech DDU-1〇〇〇,以1倍速的速度進行寫入來 ^ 電氣特性測試,讀寫光束波長65 0奈米,寫入的功率^ 7 毫瓦至2 0毫瓦之間。結果發現記錄層的反射率介於〇 2至] 0 · 6 5之間,調變最大可達〇 · 6以上。而其記錄點之單位長 度散佈率(Jitter)較實施例2中的記錄層下降〇. 5 —2%。 如熟悉此技術之人員所瞭解的,以上所述僅為本發明之較 佳實施例而已’並非用以限定本發明之申請專利範圍;凡 其他未脫離本發明所揭示之精神下所完成之等效改變或修 飾,均應包含在下述之申請專利範圍内。(pc) substrate. The function of the transparent layer 6 0 7 is to improve the heat transfer characteristics of the recording film layer and adjust the heat transfer characteristics during recording. The material of the transparent layer 607 is the same as that of the transparent layer, but the thickness is between about 5 nm and 50 nm. 9 Perform writing at Pulsetech DDU-1OO, at 1x speed. ^ Electrical characteristics test, read and write beam wavelengths are 65 nm, and write power is between 7 milliwatts and 20 milliwatts. As a result, it was found that the reflectance of the recording layer was between 0 2 and 0 · 65, and the maximum modulation was more than 0 · 6. And the unit length spread rate (Jitter) of its recording points is 0.5-2% lower than that of the recording layer in Example 2. As understood by those familiar with this technology, the above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of patent application for the present invention; all others that have been completed without departing from the spirit disclosed by the present invention, etc. Effective changes or modifications should be included in the scope of patent application described below.
第17頁 丨 I24Q267: 」 ί ^ ν · · 一…人广.] ;….‘秦號―92JL0.6^ 91 年_^_0_修正_ 圖式簡單說明 第1圖係繪示根據本發明所揭露之光學式可記錄媒體之剖 面示意圖; 第2圖係繪示本發明所揭露之光學式可記錄媒體寫入資料 後的剖面示意圖; 第3圖係繪示本發明實施例4所揭露之光學式可記錄媒體之 剖面示意圖; 第4圖係繪示本發明實施例5所揭露之光學式可記錄媒體之 剖面示意圖;以及 第5圖係繪示本發明實施例6所揭露之光學式可記錄媒體之 剖面示意圖。 圖式標記說明 2 0 0、3 02、40 0、5 0 0、6 0 0 :記錄層 2 0 2、402、5 0 2、6 0 2:透明基底 204、 304、 404、 504、 604、 607:透明層 2 0 6、3 0 6、314、40 6、503、5 0 6、6 0 6:半反射層 208、 308、 403、 408、 508、 608:介電層 210、410、510、610:反射層 212、 412、 512、 612:材質層 3 0 0 :寫入光束Page 17 丨 I24Q267: "ί ^ ν · · One ... People Canton.]; .... 'Qin No. 92JL0.6 ^ 91 Years _ ^ _ 0_ Correction _ Brief Description of the Schematic Figure 1 shows a diagram according to the present invention A schematic cross-sectional view of the disclosed optical recordable medium; FIG. 2 is a schematic cross-sectional view of the optical recordable media disclosed in the present invention after writing data; and FIG. 3 is a schematic cross-sectional view of the optical recordable media disclosed in Embodiment 4 of the present invention. A schematic cross-sectional view of an optical recordable medium; FIG. 4 is a schematic cross-sectional view of the optical recordable medium disclosed in Embodiment 5 of the present invention; and FIG. 5 is a schematic cross-sectional view of the optical recordable medium disclosed in Embodiment 6 of the present invention. A schematic cross-sectional view of a recording medium. Description of graphic symbols 2 0 0, 3 02, 40 0, 5 0 0, 6 0 0: Recording layer 2 0 2, 402, 5 0 2, 6 0 2: Transparent substrate 204, 304, 404, 504, 604, 607: transparent layers 2 0 6, 3 0 6, 314, 40 6, 503, 5 0 6, 6 0 6: semi-reflective layers 208, 308, 403, 408, 508, 608: dielectric layers 210, 410, 510 610: Reflective layers 212, 412, 512, 612: Material layer 3 0 0: Writing beam
第18頁Page 18
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI381799B (en) * | 2007-08-24 | 2013-01-01 | China Steel Corp | Both surface decoration and electromagnetic shielding of the non-metallic substrate |
| TWI382415B (en) * | 2008-06-18 | 2013-01-11 | China Steel Corp | Single write type optical storage record unit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI381799B (en) * | 2007-08-24 | 2013-01-01 | China Steel Corp | Both surface decoration and electromagnetic shielding of the non-metallic substrate |
| TWI382415B (en) * | 2008-06-18 | 2013-01-11 | China Steel Corp | Single write type optical storage record unit |
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