544375 A7 B7 五、發明説明（ 發明領域： 本發明係有關於一種化學 M 1 · 1 p 1. U· 為械研磨（Chemical544375 A7 B7 V. Description of the invention (Field of the invention: The present invention relates to a chemical M 1 · 1 p 1. U · is mechanical grinding (Chemical
Mechanical Polishing ; CMP)m 驻嬰 (請先閲讀背面之注意事項再場寫本頁} ^頌裒置。特別是有 用複數個彈性中空體和研磨選擇㈣種使 、直’來调整晶圓之適私 個位置之研磨速率的化學機械研磨頭装置。 發明背景： < 在半導體基材上形成各個膜声 u膜層、並定義各層的結構及圖 案、以藉由不同材質及組合及連接關係形成所需的元件結構 的製程之中’平坦化製程扮演著極為重要的角色。藉由平坦 化製程的應用’可使原來因形成不同圖案與結構的高低起伏 表面’經由平坦化的步驟而使其表面平坦化，提供平坦的基 材表面，以提高後續膜層形成時的均勻性，並藉由良好的平 坦度提供如微影製程或晶圓對準程序時的準確性及定位精 確性。 經濟部智莛財產局員工消費合作社印製 由於化學機械研磨法提供良好的均勻性、控制性、及表 面平坦度，因而成為超大型積體電路（ultra large scale integrated circuit; ULSI)階段中，製程應用上最為重要的一 種平坦化技術。經過數十年的發展，此技術已成功的應用在 半導體製程上。此方法的施行，即利用化學和機械兩種方 式，一旦製程參數控制得當，化學機械研磨可以提供被研磨 表面高達94%以上的平坦度。提供相對於晶圓表面的運動， 以同時對基材表面材質產生化學性及物理性的去除作用。 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) 544375 A7 B7 經濟部智惡財產局員工消費合作社印製 五、發明説明（ 請參照第1圖，第1圖為繪示進行化學機械研磨製程的 設備示意圖，其係由用來進行晶片研磨的研磨平台100 (polishing platen)，及來吸附晶圓的化學機械研磨頭 200 (polishing head)所組成。其中化學機械研磨頭200具有晶圓 支撐膜（membrane)，可吸附住晶圓之背面，並將晶圓的正面 壓在舖有一層研磨墊110的研磨平台100上來進行化學機械 研磨。其中之化學研磨，即為經由研漿導管120適當的注入 研漿（slurry)，當研磨平台1〇〇和化學機械研磨頭200各自沿 一定的方向旋轉時，研漿和研磨表面產生反應而將沉積層去 除並將之平坦化。影響CMP平坦化技術的主要製程參數， 與研漿，研磨轉速，及晶圓的受壓大小有關。其它，例如研 磨塾的材質’被研磨材質的種類等等也都是影響其操作的因 素。 當研磨程序進行時，研磨頭中的晶圓支撐膜會被充壓而 以向下力壓迫晶圓’使之能貼緊於研磨墊而進行研磨。晶圓 支撐膜施加於晶圓上之局部各處的壓力大小，直接影響晶圓 上各處的研磨速率，壓力愈大則研磨速率愈大。所以，若晶 圓支撐膜受壓力後無法形成受力均勻的曲面，以適當地施與 晶圓向下均勾的壓力，將會導致不均句的研磨效果，影響晶 圓的良率。為解決此問題，習知之化學機械研磨頭使用中心 膜來調整晶圓中心位置所受的局部堡力，或於晶圓支撐膜四 周的上方安裝環狀内管，藉由調整内營的壓力，來改變晶圓 本紙張尺度適用中國國家標準(CNS)A4規格(210x297公釐) V..............¥.........、玎---------^ (請先閲讀背面之注意事項再填寫本頁)Mechanical Polishing; CMP) m Infant (please read the precautions on the back before writing this page) ^ Song 裒 set. Especially using a plurality of flexible hollow bodies and polishing options to adjust the wafer's suitability. Chemical mechanical polishing head device with a polishing rate at a private location Background of the invention: < Form each film acoustic u film layer on a semiconductor substrate, and define the structure and pattern of each layer to form by different materials and combinations and connection relationships In the process of the required element structure, the 'flattening process plays a very important role. The application of the flattening process can make the original undulating surface with different patterns and structures formed' through the flattening process. The surface is flattened to provide a flat substrate surface to improve the uniformity of subsequent film formation, and to provide accuracy and positioning accuracy such as lithography process or wafer alignment process through good flatness. Printed by the Consumer Cooperative of the Ministry of Intellectual Property Bureau because the chemical mechanical polishing method provides good uniformity, controllability, and surface flatness, so it becomes super large In the stage of ultra large scale integrated circuit (ULSI), the most important flattening technology in process application. After decades of development, this technology has been successfully applied to semiconductor processes. The implementation of this method is Using both chemical and mechanical methods, once the process parameters are properly controlled, chemical mechanical polishing can provide a flatness of more than 94% of the surface being polished. It provides motion relative to the wafer surface to simultaneously produce chemical properties on the surface material of the substrate and Physical removal effect. This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) 544375 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Office of the Ministry of Economic Affairs 5. Description of the invention (please refer to Figure 1, Figure 1 The figure is a schematic diagram of a device for performing a chemical mechanical polishing process, which is composed of a polishing platen 100 for polishing wafers and a chemical mechanical polishing head 200 for adsorbing wafers. The chemical The mechanical polishing head 200 has a wafer support film (membrane), which can adsorb the back surface of the wafer and attach the front surface of the wafer. Chemical mechanical polishing is carried out by pressing on the polishing platform 100 with a layer of polishing pad 110. The chemical polishing is to inject slurry appropriately through the slurry pipe 120. When the polishing platform 100 and the chemical mechanical polishing head When each 200 rotates in a certain direction, the slurry and the polishing surface react to remove and flatten the deposited layer. The main process parameters that affect the CMP planarization technology, and the slurry, polishing speed, and pressure on the wafer It depends on the size. Others, such as the material of the grinding mill, the type of the material to be ground, etc. are also factors that affect its operation. When the polishing process is performed, the wafer support film in the polishing head will be charged and pressed against the wafer 'with a downward force so that it can be pressed against the polishing pad for polishing. The amount of pressure applied by the wafer support film on each part of the wafer directly affects the polishing rate of each part on the wafer. The greater the pressure, the greater the polishing rate. Therefore, if the wafer support film cannot form a uniformly-stressed curved surface after being pressed to properly apply the downward pressure of the wafer, it will cause the grinding effect of uneven sentence and affect the yield of wafer. In order to solve this problem, the conventional chemical mechanical polishing head uses a center film to adjust the local forcing force on the center position of the wafer, or installs a ring-shaped inner tube above the periphery of the wafer support film. By adjusting the pressure of the inner camp, To change the paper size of the wafer, the Chinese National Standard (CNS) A4 specification (210x297 mm) is applied. V .............. ¥ ........., 玎- ------- ^ (Please read the notes on the back before filling this page)
五、 發明説明( 支撐膜四周施與晶圓的向下壓力，因而調整晶圓中心位置或 邊緣的研磨速率。 (請先閱讀背面之注意事項再填寫本頁) 然而，4些習知之化學機械研磨頭往往只能調整晶圓中 心位置或邊緣的局部研磨速率，.無法有效解決其他位:之研 磨不均的問題’非常不易得到均勻的優良研磨效果，因而嚴V. Description of the invention (downward pressure is applied to the wafer around the support film, so the grinding rate of the center position or edge of the wafer is adjusted. (Please read the precautions on the back before filling this page) However, 4 known chemical machinery The polishing head often can only adjust the local polishing rate of the center position or edge of the wafer. It cannot effectively solve the problem of other positions: uneven polishing. It is very difficult to obtain uniform and excellent polishing results, so
重影響到後段製程的晶圓良率，亦會影響製程的可靠度及產 能。 X 因此非常迫切需要發展出一種化學機械研磨頭裝 置’可以簡便地改善現有的化學機械研磨頭，來有效地調 整晶圓上各位置的研磨速率，因而獲得高均勻度和平坦度 的研磨效果。 發明目的及概述： 馨於上述之發明背景中，習知之化學機械研磨頭無法有 效解決晶圓上其他位置之研磨不均的問題，非常不易得到均 句的優良研磨效果，因而嚴重影響到後段製程的晶圓良率， 亦會影響製程的可靠度及產能。 沒濟部智莛財產局員工消費合作社印製 因此’本發明之目的為提供一種化學機械研磨頭裝 置，藉以簡便地改善現有的化學機械研磨頭，彈性地選擇 晶圓上欲調整研磨速率的位置，有效地調整晶圓上所選定 之位置的研磨速率，因而獲得高均勻度和平坦度的研磨效 果。 依據本發明之上述目的，因此本發明提供一種化學機 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) 544375 五、發明説明（ 經濟部智慧財產局員工消費合作社印^ 研磨頭裝置，具有用來導入流體的研磨頭頂殼 〇uSlng)，以及與晶圓相接觸的的晶圓支撐膜 (nibrane) ’其特徵在於··具有研磨選擇裝置，可選 圓支撐膜上之至少一欲粆舍丨你要 、曰曰來鮮…一並控制通入或抽出流體 h周！曰曰圓支撐膜麼追晶圓的作用麼力，以調整晶圓 應於至少一欲控制位置上的研磨速率。 、又，本發明提供一種化學機械研磨頭裝置，至少包括： 研磨頭頂殼(Housing)’其中研磨頭頂殼具有第_通道和第 -通道：#以通入或抽出第一流體和第二流體；支撐板， /、中支撐板具有硬數個凹陷區，且凹陷區中安 彈性中…複數個管路，其中彈性中空體連接於；：個 研磨選擇裝置安裝於支樓板與上研磨頭外殼之間，盆中第 接於研磨選擇裝置之第-表面，藉由通入或抽出 ,, 一擇至少一欲控制管路連接於 至 一欲控制彈性中空體，第-補 體弟一通道相連接於研磨選擇裝 置之第二表面，藉由通入戋抽出筮-、* ώ 出第-流體，來控制至少- 欲控制彈性中空體中的作用壓 磨選擇梦署夕楚-主 而k些官路係連接於研 安裝於…圓支樓膜，晶圓支撐膜係 於研磨养’曰n㈣面’猎以壓迫晶圓，以使晶圓貼緊 數個對應位置，經由控制至少一彈性中相接觸的複 對應位置上的研磨速率。 …體來調整晶圓在 另外’研磨選擇裝置至少包括：一外殼，其中外殼之 訂 線 本紙張尺度適用中國國家標準(CNS)A4規格(210x297公釐 、發明說明（ cm i φ lH> Η i 第一表面且右哲 ,^ 一’第一開口 ，藉以連接第一通道，第二表面具 有第二開口， 货一 ’錯以連接第二通道，而第三表面具有複數個 弟二開口，藉、 糟乂連接刖述之管路；主動棘輪（Ratchet Wheel) 4立於夕卜（i^內 赫 其中主動棘輪具有複數個主動棘輪齒，主動 内：:係位於非面對第一開口的表面；被動棘輪位於外殼 d”中破動棘輪具有複數個被動棘輪齒，主動棘輪齒係 興被動献^^ j i 、 ^ 目配合來轉動被動棘輪，被動棘輪在不具有 被動棘1^·岳· ^ + a於〗 、表面上並具有被動棘輪凹陷區；固定棘輪固 的内側壁上，藉以固定主動棘輪與被動棘輪於其 轉盤位於被動棘輪凹陷區的下方，轉盤更至少包括· 通=輸入孔，係與第二開口相對應；以及至少一流體輸出 、心其中至少一流體輸出通道的一端係連接於流體輸入 至夕流體輸出通道的另一端係延伸出轉盤，當適當 轉動轉盤之後’至少一流體輸出通道會與第三開口其中至 V之相吻合；基座，位於面對被動棘輪凹陷區之轉盤的 表面上，且可與被動棘輪凹陷區相吻合；以及彈性體，位 於被動棘輪凹陷區和基座之間。 發明詳細說明·· 本發明揭露一種化學機械研磨。本發明係使用安裝有 複數個彈性中空體的支撐板，藉由控制彈性中空體中的壓 力大小，來調整晶圓支撐膜施加在晶圓之複數個位置之向 下壓力的大小，而改變其研磨速率。 請參照第2圖和第3圖，第2圖為繪示本發明之化學 (請先閲讀背面之注意事項再場寫本頁) 裝· 、一叮. 線 :土 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐） 544375 A7 B7 五、發明説明（） 機械研頭裝置的剖面正視示意圖，而第3圖為繪示本發明 之化學機械研磨頭裝置的仰視示意圖，由第2圖之A方。 觀之（除晶圓支撐膜500外）。 本發明之化學機械研磨頭裝置的上方安裝有研磨頭頂 殼210,其中研磨頭頂殼210的中心有貫穿孔（未標示），藉 以供萬向桿202穿過，萬向桿202的下方連接萬向^ (GimbalS)208，萬向板208的周圍係固定於底座2〇4的下 方。底座204的下方並安裝有固定環2〇6，藉以在研磨時， 保持晶圓於固定環206中。萬向桿202和萬向板2〇8的中 心有通道216，藉以通入或抽出流體例如氮氣，來控制晶 圓支撐膜500之吸附晶圓的動作。晶圓支撐膜5〇〇係安裝 在固定環206内，以及支樓板400的下方，藉以壓迫晶圓， 以使晶圓貼緊於研磨墊。晶圓支撐膜5〇〇的邊緣並自支撐 板400的下表面，經其側邊延伸至支撐板4〇〇之上表面的 邊緣。支撐板400係安裝在底座204的下方，以及固定環 206内。位於支撐板400之上表面邊緣的晶圓支撐膜5〇〇 上方安裝有内管330 ’其中内管330可為橡膠環狀管。内 管330與晶圓支撐膜500間安裝有撓性元件（Flexure)32〇， 内管330中的作用壓力可透過撓性元件32〇，來調整晶圓 支撐膜500邊緣施加在研磨墊的向下壓力。另外，本發明 亦可有外蓋600來保護其中之元件。 支撐板400具有複數個凹陷區（未標示），這些凹陷區 中安裝有複數個彈性中空體402、404、4〇6、412和414， 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) ··..............裝.........、玎.........^ (請先閲讀背面之注意事項再場寫本頁) 經濟部智莛財產局員工消費合作社印製 544375 五、發明説明（ 並可在其中心位置安裝有中央彈性中空體41〇，與晶圓之 中、位置相接觸，其中彈性中空體4〇2、4〇4、4〇6、412和 414可為同心環狀管，這些彈性中空體的材質可為橡膠。 晶圓支撐膜5〇〇上有分別與這些彈性中空體相接觸的複數 個對應位置’當通入或抽出流體例如氮氣於這些彈性中空 體之中時，可增加或減少這些對應位置的壓力，因而增加 或減乂日日圓支撑膜500於這些對應位置上施加在研磨墊的 向下壓力。 —研磨頭頂殼210具有通道212、通道214和通道218, 藉以通入或抽出流體（例如氮氣），其中通道212所通入或 抽出的流體係用來控制以環2〇6與研錢間的壓力，以 調整晶圓邊緣的研磨速率。通道214係通入或抽出的流體 來選擇晶圓上欲控制研磨速率的位置，而通道218係用來 對所選定的欲控制位置提供作用壓力，以調整此欲控制位 置鈀加在研磨墊的向下壓力，因而調整在此晶圓位置的研 磨速率。 本發明的特徵之一係使用研磨選擇裝置3〇〇來選擇並 控制支撐板400中的彈性中空體。研磨選擇裝置3〇〇係安 裝於支撐板400與研磨頭頂殼21〇之間。其中通道214係 經由管路308連接於研磨選擇裝置3〇〇之第一表面，藉由 通入或抽出流體，來自管路31〇a至管路31〇g選擇至少一 欲控制管路，其中管路310a至管路31〇c、管路3i〇e至管 路310f ^路310d和管路31〇g的一端分別連接至彈性中 本紙張尺度適用中國國家標準(CNS)A4規格(210x 297公釐) 」..............¥.........、玎......... ^ (請先閲讀背面之注意事項再場寫本頁) 544375 A7 B7 五、發明説明（） 空體402、404、406、412、414、中央彈性中空體410和 (請先閲讀背面之注意事項再場寫本頁) 内s 330 ’其另一端則分別連接至與第二表面相鄰的第三 表面上。通道218係經由管路318連接至與第一表面相對 的第一表面上，藉由通入或抽出流體，來控制欲控制彈性 中空體的作用壓力，以控制晶圓上欲控制位置的研磨速 率。 本發明之研磨選擇裝置係利用通入或抽出流體，來使 主動棘輪帶動被動棘輪而轉動轉盤，使轉盤之流體輸出通 道與研磨選擇裝置之外殼的開口吻合，藉以傳送流體至欲 做壓力調整的彈性中空體。 請參照第4圖和第5圖，第4圖為繪示本發明之研磨 選擇裝置的剖面正視示意圖，而第5圖為繪示本發明之研 磨選擇裝置的仰視示意圖（由第4圖之開口 35〇&的B方向 觀之）。 經濟部智莛財產局員工消費合泎汪印災 研磨選擇裝置300具有外殼350，其中外殼350的前 述之第一表面具有開口 351a，藉以連接管路308(至第2圖 所示之通道214)，前述之第二表面具有開口 351b，藉以連 接管路318(至第2圖所示之通道218)，而前述之第三表面 具有複數個開口（開口 350a至開口 350h)，來與管路310a 至管路31〇g(未使用開口 350h)連接。外殼350内有主動棘 輪352，其中主動棘輪352具有複數個主動棘輪齒352a， 主動棘輪齒3 52a係位於非面對開口 3 5 1 a的表面（即主動棘 輪齒352a朝下）。位於外殼350内之被動棘輪356具有複 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公笼) 經濟部智惡財產局員工消費合作社印製 544375 A7 ---- B7 五、發明説明（） 數個被動棘輪齒356a，主動棘輪齒352a係與被動棘輪齒 356a相配合來轉動被動棘輪356，被動棘輪356位在不具 有被動棘輪齒356a的表面上並具有被動棘輪凹陷區 3 5 6b。固定棘輪354係固定於外殼35〇的内側壁上，藉以 固定主動棘輪352與被動棘輪3 56於其中。被動棘輪凹陷 區3 56b的下方有轉盤36〇，轉盤36〇具有流體輸入孔 和至少一流體輸出通道360b，其中流體輸入孔360a係與開 口 35 1b相對應，而至少一流體輸出通道36〇b的一端係連 接於流體輸入孔36〇a，至少一流體輸出通道36〇b的另一端 係延伸出轉盤360，當適當轉動轉盤360之後，至少一流 體輸出通道360b會與開口 350a至開口 350h其中至少之一 相吻合’來將流體自流體輸入孔3 60a和開口 3 5 1 b導至適 备的彈性中空體’而產生壓力作用於晶圓支撐膜上。基座 362係位於面對被動棘輪凹陷區356b之轉盤360的表面 上’且可與被動棘輪凹陷區356b相吻合，其内並有彈性體 3 5 8(例如··彈簧），彈性體358係位於被動棘輪凹陷區3 56b 和基座3 6 2之間。 當流體經管路3 08，由開口 351a進入外殼3 50後，所 產生的壓力會推動主動棘輪352向下移動。在主動棘輪齒 352a與被動棘輪齒356a吻合時，會產生向下推力，使被動 棘輪齒356a離開固定棘輪354而可自由轉動。此時，主動 棘輪齒3 52a與被動棘輪齒3 56a的斜面並會產生側向推 力’來轉動被動棘輪356。當主動棘輪352進入固定棘輪 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公爱) ................^.........、可.........^ (請先閲讀背面之注意事項再場寫本頁) 經濟部智慧財產局員工消費合作社印製 544375 、發明説明（） 354後，便會停止轉動。在 座-吻合時，其轉動的動作動會棘連輪帶;;二:移動至與基 時彈性體358會被壓縮。當轉盤轉動轉盤36°，而此 通道鳩例如自開口 350a之流體輸出 心〜轉動至與開口 35〇b料施廿 與其吻合時，流體會由開口 35 μ 、^並 、、’里官路3 〇 8被抽出，彈性 體3 5 8此時會將·被動棘輪3 56 ^ ^ ^ ^ ^ 上頂入固定棘輪354中而 使其仔止轉動。如此，藉由控 4目開口 3 5 1 a經管路3 0 8抽 出和通入流體的時間與流量大 ~ ^ ’便可決定轉盤360轉動 的角度，而可選擇晶圓上之不 个u位置來控制其研磨速率， 例如：當轉盤3 60上的流體輪屮# 出通道360b自開口 350a之 處轉動至與開口 350b對應並鱼复咖人士 ，、具吻合時，所控制的研磨位 置即由晶圓中心位置（即第2 ill ^ - V ^ 圖所不之中央彈性中空體410 所對應）改為如第2圖所示之彈κ占 <萍性中空體402所對應的位 置。值得-提的是，如欲同時控制晶圓上之複數個不同位 置’則可使用相同數目的流體輪出通道鳩，並經適當安 排及調整自開口 351a歸·答改in。1» , 曰岡 a ia丄㊁路308抽出和通入流體的時間與 流量。 綜合上述，本發明之優點為提供—種化學機械研磨頭 裝置，可以簡便地改善現有的化學機械研磨頭，並彈性地 選擇晶圓上欲調整研磨速率的位置，而可有效地調整晶圓 上所任意選定位置的研磨速率，獲得高均勻度和平坦度的 研磨效果。 以上所述之彈性中空體的數目、位置與形狀，以及研 12 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公楚) ^ I I 丨丨丨丨丨丨_ 丨丨丨丨丨丨丨丨 訂丨 (請先閲讀背面之注意事項再場寫本頁) 544375 A7 B7 五、發明說明（） 磨選擇裝置的開口、流體輸出通道和流體輸入孔的數目、 位置與形狀，均僅為舉例說明，本發明並不在此限。 如熟悉此技術之人員所瞭解的，以上所述僅為本發明 之較佳實施例而已’並非用以限定本發明之申請專利範 圍，凡其它未脫離本發明所揭示之精神下所完成之等效改 變或修飾，均應包含在下述之申請專利範圍内。 圖式簡單說明： 本發明的較佳實施例將於往後之說明文字中輔以下列 圖形做更詳細的闡述，其中： 第丨圖為繪示進行化學機械研磨製程的設備示意圖； 第2圖為繪示本發明之化學機械研頭裝置的剖面正視 示意圖； 第3圖為繪示本發明之化學機械研磨頭裝置的仰視示 意圖’由第2圖之A方向觀之（除晶圓支撐膜5〇〇外）； 第4圖為繪示本發明之研磨選擇裝置的剖面正視示意 圖；以及 第5圖為繪示本發明之研磨選擇裝置的仰視示意圖， 由第4圖之開口 350a的B方向觀之。 圖號對照說明： Γ.......................^ (請先閲讀背面之注意事項再場寫本頁) 經濟部智慧財產局員工消費合作社印製 100 研磨平台 110 研磨塾 120 研漿導管 200 化學機械研磨頭 202 萬向桿 204 底座 206 固定環 208 萬向板 13 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公楚) 544375 A7 B7 五 經濟部智慧財產局員工消費合作社印製 發明説明（） 2 10 研磨頭頂殼 212、214 > 218 通道 216 萬向桿通道 3 00 研磨選擇裝置 310a、310b、310c、310d 管路 31Oe、31 Of、3 1 Og、308 管路 316 、 318 管路 320 撓性元件 3 30 内管 3 50 外殼 3 50a、350b、3 50c、350d 開 口 3 50e、350f、3 50g、350h 開 口 3 5 1 a、3 5 1 b 開口 3 52 主動棘輪 3 52a 主動棘輪齒 3 54 固定棘輪 3 56 被動棘輪 3 56a 被動棘輪齒 3 56b 被動棘輪凹陷區 3 5 8 彈性體 360 轉盤 3 60a 流體輸入孔 360b 流體輸出通道 \..............I.......、玎.........^ (請先閲讀背面之注意事項再場寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) 544375 A7 ___B7_ 五、發明説明（） 3 62 基座 400 支撐板 410 中央彈性中空體 4〇2、404、406、412、414 彈性中空體 500 晶圓支撐膜 600 外蓋 ..............裝………訂.........^ (請先閲讀背面之注意事項再場寫本頁) 經濟部智慈財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐)It seriously affects the yield of wafers in the later stage, and it also affects the reliability and productivity of the process. X Therefore, it is very urgent to develop a chemical mechanical polishing head device 'which can simply improve the existing chemical mechanical polishing head device to effectively adjust the polishing rate of each position on the wafer, thereby obtaining a high uniformity and flatness polishing effect. Object and Summary of the Invention: In the above background of the invention, the conventional chemical mechanical polishing head cannot effectively solve the problem of uneven polishing at other positions on the wafer, and it is very difficult to obtain the excellent polishing effect of uniform sentence, which seriously affects the subsequent process. The wafer yield will also affect the reliability and capacity of the process. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Health, So the purpose of the present invention is to provide a chemical mechanical polishing head device, which can easily improve the existing chemical mechanical polishing head, and flexibly select the position on the wafer where the polishing rate is to be adjusted , Effectively adjust the polishing rate of the selected position on the wafer, thereby obtaining a high uniformity and flatness polishing effect. According to the above purpose of the present invention, the present invention provides a chemical machine paper size applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 544375 V. Description of the invention (printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs ^ Grinding head device , With a grinding head top shell for introducing a fluid (uSlng), and a wafer support film (nibrane) in contact with the wafer 'characterized in that it has a grinding selection device, and at least one of the circular support films can be selected粆 House 丨 You want to, say, come fresh ... together control the flow of fluid in or out for h weeks! The round support film tracks the force of the wafer to adjust the polishing rate at which the wafer should be at least one position to be controlled. Furthermore, the present invention provides a chemical mechanical polishing head device, which at least includes: a grinding head housing (where Housing) wherein the grinding head housing has a first channel and a first channel: # to pass in or extract the first fluid and the second fluid; Support plate, /, The middle support plate has a number of hard recessed areas, and the recessed area is elastic ... a plurality of pipelines, in which the elastic hollow body is connected to ;: a grinding selection device is installed between the support floor and the upper grinding head shell The first part of the basin is connected to the first surface of the grinding selection device, and by accessing or withdrawing, at least one of the pipelines to be controlled is connected to an elastic hollow body to be controlled, and the first-complement channel is connected to the grinding. Select the second surface of the device, and control at least by accessing 戋 drawing out 、-, * ώ empting out the first-fluid-To control the action in the elastic hollow body, crushing and selecting Meng Shou Xi Chu-Master and some official routes Connected to the research and installation on the round branch floor film, the wafer support film is ground and nurtured, called the n-face, to press the wafer so that the wafer is in close contact with several corresponding positions, and at least one elastic medium is in contact with each other. At the corresponding position Mill rate. … To adjust the wafer. In addition, the grinding selection device includes at least: a casing, wherein the paper size of the casing is adapted to Chinese National Standard (CNS) A4 specifications (210x297 mm, invention description (cm i φ lH > Η i The first surface and the right side, a first opening to connect the first channel, the second surface has a second opening, the cargo one is wrong to connect the second channel, and the third surface has a plurality of second openings, so 、 The connection between the pipelines described; active ratchet (Ratchet Wheel) 4 stands at Xi Bu (i ^ Nech, where the active ratchet has a plurality of active ratchet teeth, active inside :: is located on the surface not facing the first opening The passive ratchet is located in the housing d ". The broken ratchet has a plurality of passive ratchet teeth. The active ratchet teeth are used to rotate the passive ratchet. ^ Ji and ^ are used to rotate the passive ratchet. The passive ratchet does not have a passive ratchet 1 ^ · 岳 · ^ + a on the surface, and has a passive ratchet recessed area; the inner wall of the fixed ratchet is fixed so that the active ratchet and the passive ratchet are fixed on the turntable below the passive ratchet recessed area, and the turntable at least includes Tong = input hole, corresponding to the second opening; and at least one fluid output channel, one end of at least one fluid output channel is connected to the fluid input channel and the other end of the fluid output channel is extended out of the turntable, when properly rotated After the turntable, at least one fluid output channel will coincide with the third opening V to it; the base is located on the surface of the turntable facing the recessed area of the passive ratchet, and can coincide with the recessed area of the passive ratchet; and an elastomer, Located between the recessed area of the passive ratchet and the base. Detailed description of the invention The invention discloses a chemical mechanical grinding. The invention uses a support plate with a plurality of elastic hollow bodies installed to control the pressure in the elastic hollow body. To adjust the downward pressure applied by the wafer support film to the wafers at several locations, and change its polishing rate. Please refer to Figures 2 and 3, which shows the chemistry of the present invention (please first Read the notes on the back and write this page again.) Assembling ·, Yiding. Line: The size of the original paper is applicable to the Chinese National Standard (CNS) A4 (210X297 mm) 544375 A7 B7 V. Description of the invention () A schematic cross-sectional front view of the mechanical research head device, and Figure 3 is a schematic bottom view showing the chemical mechanical polishing head device of the present invention, from the side of Figure A. View (except for wafer support) Outside the membrane 500). A grinding head top case 210 is installed above the chemical mechanical grinding head device of the present invention, wherein the center of the grinding head top case 210 has a through hole (not labeled) for the universal rod 202 to pass through, and the universal rod 202 The GimbalS 208 is connected to the bottom of the frame, and the periphery of the gimbal plate 208 is fixed below the base 204. A fixing ring 206 is installed below the base 204 to keep the wafer fixed during grinding. Ring 206. The center of the gimbal 202 and the gimbal plate 208 has a channel 216 through which a fluid such as nitrogen is passed in or out to control the wafer-adsorbing action of the wafer support film 500. The wafer supporting film 500 is installed in the fixing ring 206 and under the support floor 400 to press the wafer so that the wafer is in close contact with the polishing pad. The edge of the wafer supporting film 500 is extended from the lower surface of the supporting plate 400 to the edge of the upper surface of the supporting plate 400 through its side. The support plate 400 is installed below the base 204 and inside the fixing ring 206. An inner tube 330 is mounted above the wafer support film 500 located on the upper surface edge of the support plate 400. The inner tube 330 may be a rubber ring tube. A flexible element (Flexure) 32 ° is installed between the inner tube 330 and the wafer support film 500. The pressure applied by the inner tube 330 can pass through the flexible element 32 ° to adjust the direction of the edge of the wafer support film 500 applied to the polishing pad. Down pressure. In addition, the present invention may also have an outer cover 600 to protect the components therein. The support plate 400 has a plurality of recessed areas (not labeled), and a plurality of elastic hollow bodies 402, 404, 406, 412, and 414 are installed in these recessed areas. (Mm) ·· ........ install ........., 玎 ......... ^ (Please read the precautions on the back first Write this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 544375 V. Description of the invention (and a central elastic hollow body 41 can be installed at its center position, which is in contact with the middle and position of the wafer, among which the elastic hollow body The bodies 402, 404, 406, 412, and 414 can be concentric annular tubes, and the material of these elastic hollow bodies can be rubber. The wafer supporting film 500 has contact with these elastic hollow bodies, respectively. The corresponding positions of 'when the fluid such as nitrogen is passed in or out of these elastic hollow bodies, the pressure of these corresponding positions can be increased or decreased, so the yen support film 500 is increased or decreased at these corresponding positions. Downward pressure of the polishing pad.-The grinding head top case 210 has a channel 212, a channel 214, and a channel 218, whereby Into or out of the fluid (such as nitrogen), the flow system in or out of the channel 212 is used to control the pressure between the ring 206 and the ground to adjust the polishing rate of the wafer edge. The channel 214 is connected to or The extracted fluid is used to select the position on the wafer where the polishing rate is to be controlled, and the channel 218 is used to provide the applied pressure to the selected position to be controlled, so as to adjust the downward pressure of the palladium on the polishing pad at the position to be controlled, and thus adjust The polishing rate at this wafer position. One of the features of the present invention is to use a grinding selection device 300 to select and control the elastic hollow body in the support plate 400. The grinding selection device 300 is installed on the support plate 400 and grinds Between the top shell 21 and the channel 214 is connected to the first surface of the grinding selection device 300 through a pipeline 308, and at least the pipeline 31oa to the pipeline 31og is selected by passing in or drawing out fluid. To control pipelines, one end of pipelines 310a to 31 ° c, pipelines 3ioe to 310f, 310d, and 31g of pipelines are connected to the elastic medium respectively. The paper standards are applicable to Chinese national standards ( CNS) A4 specification (2 10x 297 mm) `` .............. ¥ ......... 、 玎 ......... ^ (Please read the notes on the back first Write this page again) 544375 A7 B7 V. Description of the invention () Hollow body 402, 404, 406, 412, 414, central elastic hollow body 410 and (Please read the precautions on the back before writing this page) Inside s 330 'The other ends are respectively connected to the third surface adjacent to the second surface. The channel 218 is connected to the first surface opposite to the first surface through a pipe 318, and is controlled by passing in or drawing out fluid. It is necessary to control the pressure of the elastic hollow body to control the polishing rate of the desired position on the wafer. The grinding selection device of the present invention uses the inflow or extraction of fluid to make the active ratchet drive the passive ratchet to rotate the turntable, so that the fluid output channel of the turntable coincides with the opening of the housing of the grinding selection device, thereby transmitting the fluid to the pressure adjustment device. Elastic hollow body. Please refer to FIG. 4 and FIG. 5. FIG. 4 is a schematic cross-sectional front view showing the grinding selection device of the present invention, and FIG. 5 is a bottom view (shown by the opening of FIG. 4) showing the grinding selection device of the present invention. 35 ° & B). The employee ’s consumption cooperation of the Ministry of Economic Affairs, the Intellectual Property Bureau, Wang Yin disaster grinding selection device 300 has a casing 350, wherein the aforementioned first surface of the casing 350 has an opening 351a to connect the pipeline 308 (to the channel 214 shown in FIG. 2) The aforementioned second surface has an opening 351b to connect the pipeline 318 (to the channel 218 shown in FIG. 2), and the aforementioned third surface has a plurality of openings (the opening 350a to the opening 350h) to communicate with the pipeline 310a. Connected to the pipeline 3 10g (350h unused opening). There is an active ratchet 352 in the housing 350, wherein the active ratchet 352 has a plurality of active ratchet teeth 352a, and the active ratchet teeth 3 52a are located on a surface not facing the opening 3 5 1 a (that is, the active ratchet teeth 352a are facing downward). The passive ratchet 356 in the housing 350 has a duplicate paper size and is applicable to the Chinese National Standard (CNS) A4 specification (210X297 male cage). It is printed by the Consumer Cooperative of the Intellectual Property Office of the Ministry of Economic Affairs 544375 A7 ---- B7 V. Description of the invention () A plurality of passive ratchet teeth 356a, the active ratchet teeth 352a are matched with the passive ratchet teeth 356a to rotate the passive ratchet 356, and the passive ratchet 356 is located on the surface without the passive ratchet teeth 356a and has a passive ratchet recessed area 3 5 6b. The fixed ratchet 354 is fixed on the inner side wall of the casing 35, thereby fixing the active ratchet 352 and the passive ratchet 3 56 therein. Below the passive ratchet recessed area 3 56b is a turntable 36o, which has a fluid input hole and at least one fluid output channel 360b, wherein the fluid input hole 360a corresponds to the opening 35 1b, and at least one fluid output channel 36ob One end is connected to the fluid input hole 36〇a, and the other end of the at least one fluid output channel 36〇b extends out of the turntable 360. After the turntable 360 is properly rotated, at least one fluid output channel 360b will be in contact with the opening 350a to the opening 350h. At least one of them coincides with “to guide the fluid from the fluid input hole 3 60a and the opening 3 5 1 b to a suitable elastic hollow body” to generate pressure to act on the wafer supporting film. The base 362 is located on the surface of the turntable 360 facing the passive ratchet recessed area 356b, and can coincide with the passive ratchet recessed area 356b, and has an elastic body 3 5 8 (such as a spring). The elastic body 358 is Located between the passive ratchet recessed area 3 56b and the base 3 6 2. When the fluid passes through the pipeline 3 08 and enters the housing 3 50 through the opening 351a, the generated pressure will push the active ratchet 352 downward. When the active ratchet tooth 352a coincides with the passive ratchet tooth 356a, a downward thrust force is generated, so that the passive ratchet tooth 356a can leave the fixed ratchet 354 and rotate freely. At this time, the inclined surfaces of the active ratchet teeth 3 52a and the passive ratchet teeth 3 56a will generate a lateral thrust 'to rotate the passive ratchet 356. When the active ratchet 352 enters the fixed ratchet, the paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 public love) ... ^ ......... Can ......... ^ (Please read the notes on the back before writing this page) After the consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs prints 544375 and the invention description () 354, it will stop rotating. During the seat-to-stap, its turning action will ratchet the wheel belt; Second, the elastic body 358 will be compressed when it moves to the base. When the turntable rotates the turntable 36 °, and this channel is, for example, from the fluid output center of the opening 350a ~ when it is rotated to coincide with the opening 35b, the fluid will pass through the opening 35 μ, ^ ,,, and 'Liguan Road 3' 〇8 is pulled out, and the elastic body 3 5 8 will push the passive ratchet 3 56 ^ ^ ^ ^ ^ into the fixed ratchet 354 to stop it from rotating. In this way, by controlling the opening of the 4 mesh 3 5 1 a through the pipeline 3 0 8 and the time and flow of the fluid is large ~ ^ 'can determine the rotation angle of the turntable 360, and can choose multiple u positions on the wafer To control the grinding rate, for example: when the fluid wheel 屮 # outlet channel 360b on the turntable 3 60 rotates from the opening 350a to the person corresponding to the opening 350b and the fish and coffee are matched, the controlled grinding position is determined by The wafer center position (corresponding to the central elastic hollow body 410 shown in the second ill ^-V ^) is changed to the position corresponding to the elastic hollow body 402 as shown in FIG. 2. It is worth mentioning that if you want to control multiple different positions on the wafer at the same time, you can use the same number of fluid wheels to exit the channel dove, and arrange and adjust them from the opening 351a. 1 », said the time and flow rate of fluid extraction and inflow from gang a ia road 308. To sum up, the advantage of the present invention is to provide a chemical mechanical polishing head device, which can easily improve the existing chemical mechanical polishing head, and elastically select the position on the wafer to adjust the polishing rate, and can effectively adjust the wafer The grinding rate at any selected position achieves a high uniformity and flatness grinding effect. The number, position and shape of the elastic hollow bodies described above, as well as the 12 paper sizes are applicable to the Chinese National Standard (CNS) A4 specification (210X297). ^ II 丨 丨 丨 丨 丨 _ 丨 丨 丨 丨 丨 丨 丨丨 Order 丨 (Please read the notes on the back before writing this page) 544375 A7 B7 V. Description of the invention () The number, position and shape of the openings, fluid output channels and fluid input holes of the mill selection device are just examples. Note that the present invention is not limited to this. As will be understood by those familiar with this technology, the above description is only a preferred embodiment of the present invention and is not intended to limit the scope of patent application for the present invention, all others completed without departing from the spirit disclosed by the present invention, etc. Effective changes or modifications should be included in the scope of patent application described below. Brief description of the drawings: The preferred embodiment of the present invention will be described in more detail in the following explanatory text with the following figures, in which: Figure 丨 is a schematic diagram of a device for performing a chemical mechanical polishing process; Figure 2 FIG. 3 is a schematic cross-sectional front view of the chemical mechanical research head device of the present invention; FIG. 3 is a schematic bottom view of the chemical mechanical polishing head device of the present invention; 〇 外); FIG. 4 is a schematic cross-sectional front view showing the grinding selection device of the present invention; and FIG. 5 is a bottom view showing the grinding selection device of the present invention, viewed from the direction B of the opening 350a of FIG. 4 Of it. Illustration of comparison of drawing numbers: Γ .................. (Please read the notes on the back before writing this page) Employees of Intellectual Property Bureau, Ministry of Economic Affairs Printed by a consumer cooperative 100 Grinding platform 110 Grinding 塾 120 Grinding duct 200 Chemical mechanical grinding head 202 Gimbal 204 Base 206 Retaining ring 208 Gimbal 13 This paper size applies to China National Standard (CNS) A4 (210X297) 544375 A7 B7 Five inventions printed by the Intellectual Property Bureau of the Ministry of Economy Employee Consumer Cooperatives printed invention description () 2 10 Grinding head top case 212, 214 > 218 Channel 216 Gimbal channel 3 00 Grinding selection device 310a, 310b, 310c, 310d Pipe 31Oe , 31 Of, 3 1 Og, 308 pipeline 316, 318 pipeline 320 flexible element 3 30 inner tube 3 50 housing 3 50a, 350b, 3 50c, 350d opening 3 50e, 350f, 3 50g, 350h opening 3 5 1 a, 3 5 1 b opening 3 52 active ratchet 3 52a active ratchet teeth 3 54 fixed ratchet 3 56 passive ratchet 3 56a passive ratchet teeth 3 56b passive ratchet recessed area 3 5 8 elastomer 360 turntable 3 60a fluid input hole 360b fluid output Channel \ .............. I ......., 玎 ......... ^ (Please (Please read the notes on the back before writing this page) This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 544375 A7 ___B7_ 5. Description of the invention () 3 62 Base 400 Support plate 410 Central elastic hollow body 402, 404, 406, 412, 414 Elastic Hollow Body 500 Wafer Supporting Film 600 Cover .............. Install ......... Order ......... ^ (Please read the precautions on the back before writing this page) Printed on the paper by the Consumer Cooperatives of the Intellectual Property Office of the Ministry of Economic Affairs, the paper size applies to China National Standard (CNS) A4 (210X297 mm)