TW522603B - Photovoltaic cells - Google Patents
Photovoltaic cells Download PDFInfo
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- TW522603B TW522603B TW088102850A TW88102850A TW522603B TW 522603 B TW522603 B TW 522603B TW 088102850 A TW088102850 A TW 088102850A TW 88102850 A TW88102850 A TW 88102850A TW 522603 B TW522603 B TW 522603B
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 44
- 239000002245 particle Substances 0.000 abstract description 24
- 239000004408 titanium dioxide Substances 0.000 abstract description 16
- 239000004065 semiconductor Substances 0.000 abstract description 11
- 239000000843 powder Substances 0.000 abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 22
- 239000000243 solution Substances 0.000 description 19
- 238000000034 method Methods 0.000 description 15
- 239000011521 glass Substances 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 11
- 239000010408 film Substances 0.000 description 11
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 8
- 239000000975 dye Substances 0.000 description 8
- 239000010410 layer Substances 0.000 description 8
- 239000002002 slurry Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000012266 salt solution Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 229910052724 xenon Inorganic materials 0.000 description 6
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 6
- 238000003801 milling Methods 0.000 description 5
- 239000011148 porous material Substances 0.000 description 5
- 238000007650 screen-printing Methods 0.000 description 5
- 229910003074 TiCl4 Inorganic materials 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000000075 oxide glass Substances 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229920001971 elastomer Polymers 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000000049 pigment Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 150000003608 titanium Chemical class 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000001186 cumulative effect Effects 0.000 description 2
- 239000013527 degreasing agent Substances 0.000 description 2
- 238000005237 degreasing agent Methods 0.000 description 2
- 238000003795 desorption Methods 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 238000011010 flushing procedure Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- HSZCZNFXUDYRKD-UHFFFAOYSA-M lithium iodide Chemical compound [Li+].[I-] HSZCZNFXUDYRKD-UHFFFAOYSA-M 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 239000004570 mortar (masonry) Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000000779 smoke Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(ii) oxide Chemical class [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 2
- KEQXNNJHMWSZHK-UHFFFAOYSA-L 1,3,2,4$l^{2}-dioxathiaplumbetane 2,2-dioxide Chemical compound [Pb+2].[O-]S([O-])(=O)=O KEQXNNJHMWSZHK-UHFFFAOYSA-L 0.000 description 1
- HGUFODBRKLSHSI-UHFFFAOYSA-N 2,3,7,8-tetrachloro-dibenzo-p-dioxin Chemical compound O1C2=CC(Cl)=C(Cl)C=C2OC2=C1C=C(Cl)C(Cl)=C2 HGUFODBRKLSHSI-UHFFFAOYSA-N 0.000 description 1
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 1
- 101100313266 Mus musculus Tead1 gene Proteins 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- 229910010165 TiCu Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-PWCQTSIFSA-N Tritiated water Chemical compound [3H]O[3H] XLYOFNOQVPJJNP-PWCQTSIFSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- FFKMIDVNOVCMSY-UHFFFAOYSA-N [Re]=O.[Sn] Chemical compound [Re]=O.[Sn] FFKMIDVNOVCMSY-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- XFVGXQSSXWIWIO-UHFFFAOYSA-N chloro hypochlorite;titanium Chemical compound [Ti].ClOCl XFVGXQSSXWIWIO-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003623 enhancer Substances 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000003517 fume Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000004816 latex Substances 0.000 description 1
- 229920000126 latex Polymers 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002572 peristaltic effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- HKJYVRJHDIPMQB-UHFFFAOYSA-N propan-1-olate;titanium(4+) Chemical compound CCCO[Ti](OCCC)(OCCC)OCCC HKJYVRJHDIPMQB-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000025508 response to water Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000002390 rotary evaporation Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 125000000858 thiocyanato group Chemical group *SC#N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/02—Diaphragms; Separators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M14/00—Electrochemical current or voltage generators not provided for in groups H01M6/00 - H01M12/00; Manufacture thereof
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/60—Compounds characterised by their crystallite size
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/50—Agglomerated particles
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/12—Surface area
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/14—Pore volume
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/16—Pore diameter
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Hybrid Cells (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Photovoltaic Devices (AREA)
Description
522603 五 發明說明 ⑴ 大f ί明係關利用二氧化鈦粉改善光電池,包含多孔粒子 ,圍自〇·;[至10公忽〇_6公尺),具有相當大鬆密 V π表面積。 用3:池為直接轉化輻射光子能成電能之設備,現今普遍 能,、^如計赫器及表等小電子裝置。此等電池製成多種型 :叫但一般包含底質上一分層結構。通常先在底質上澱積 導電材料(稱作、、電極〃),其上澱積半導體材料,繼 1 一層或多層半導體與/或絕緣材料與/或導電材料。底質 ^面的最後官能層必係第二電極,即透明導電材料。使用 守輻射光子能照耀光電池表面使電子在電池上電極間移 動。電子運動產生電勢差因而發生電流。 二氧化鈦膜以其半導體性質知名。於是有效作光電池之 半導體組份。不過,傳統二氧化鈦在目見區幾無光吸收 性,常須混合或塗復感光物質諸如一種能在日光發射的波 長内吸收光線的染料或發色圖。 ,, ΕΡ 40 7, 1 82發表一種多層光電池,其中利用由膠體溶液 製備的公沙大小之二氧化鈦作半導體層。單獨二氧化鈦雖 經報告有些轉化程度,經發現加鈮的二氧化鈦得優良結 果,並建議染料感光的二氧化鈦及/或摻藥的二氧化鈦 最佳選擇。已知公認二氧化鈦之吸收性缺點,許多工作* 致力於光電池組態及染料添加劑的研究以改進二氧化欽二 目視範圍内之吸收力。舉例,wo 91/16719 化 添加一種二價或三價重屬以加強吸收率。us.5,:5=:
第4頁 522603
522603
至合格的離子導電水準。 圖之簡說 發:1 二』典型㈣感光7102光電池橫截面的示意圖解。 導i:!提供一改良光電池,包括一導電底層,至少-半 ,- g及上面導電層,其中至少一半導體層主要含二 鈦粒子,該等粒子有〇 ·工至丨〇公忽大小,係尺寸小於 100 XI 0-9公尺微晶之聚集體。 、
本發明所用二氧化鈦有敞孔結構,其中孔徑範圍2至 1 〇 X 1〇-9公尺内任何〇. 5 X 10-9公尺孔隙直徑大小增量之 均孔隙度為至少〇. 0 0 5 cc/g。 登_碉之詳細說明 能自—本發明改進獲益的光電池包括所有已知薄層電池諸 如史葛基(Schottky)二極體型,即金屬半導體(MS)接面電 池、金屬-絕緣體-半導體(MIS)接面電池、半導體—絕緣體 -半導體(S I S)接面電池、及多接面與均接面電池製造此 等電池的過程係週知者,例如在美國5,4 8 2,5 7 0中說明, 在此引用其發表參考。
根據本發明之半導體層能經習用厚膜網印技術儲積。舉 例’混合碾細的T i〇2與一乙基纖維素/冷萜品醇聚合物溶 液製備厚膜糊。用一胡佛碾磨機(Η ο 〇 v e r M u 1 1 e r )摻混 T i 〇2/聚合物成網即用稠糊。底質用3 6 0目不銹鋼網以底部 乳膠範圍自5 · 8 X 1 0_6公尺至3 . 8 X 1 〇-5公尺厚度定型。所有 部分用一實驗室規模手印機印刷。此製品於1 25 °C乾燥1 0
第6頁 522603 五、發明說明(4) 分鐘後於4 5 0 °C燒結1小時。 二氧化鈦粒子有本發明必要之設定特性者能根據 1997/9/11收件待審的共同讓渡之申請案08/927,448號之 . 内容製備。適當的二氧化鈦粒子典型製法為: (1)製備一酸性鈦鹽溶液,典型自總鈦鹽約丨〇 %至約5 〇 % 之至少一種鈦鹽之水液, (2 )加此欧鹽酸性溶液於一含至少2 〇 %鹼的鹼性水液同時 維持約2 0 C至約9 5。(:溫度使二氧化鈦粒子沉澱,快速起始 反應加熱後稀釋’直至達到p jj約2至約4。 為改善光電池效率且容許用厚膜技術於試樣製備,經以4 上程序所製試樣的燒結物與粒子大小常由碾磨縮小。沉澱 後乾燥氧化物首先用乳缽與杵壓碎至-5〇目。氧化物於 =0 c煅燒1小時,加進一 # 〇 〇橡膠襯裡的球磨機至半滿之 回饴度1 0 mm YTZ介體。用異丙醇作碾細溶劑,將此醇加 入含介體與試樣之碾機中直到液面覆蓋碾機内介體/試 樣。典型須20〇cc供碾磨。於是碾機以18〇rpm速度_動總 叶1 8小時。所得漿液在加熱板上低熱4小時。燒結塊大小 於碾磨後減至· 5-· 7 #之d50。 右須以某些其他金屬添加於二氧化鈦粒子,可按以下步 驟實行: m (1)製備一鈦金屬鹽的含水鹽液與一加料金屬 鹽液, 〜> (2 )加大部分含水鹽液於一含至少2 〇%鹼的鹼水液内,急 速起始反應熱後維持溫度自約5〇 t至約95它並稀釋得第二
522603 五、發明說明(5)
^合物D (3) 合併餘留的鈦金屬鹽液與加料金屬鹽液得第二混合 物,及 (4) 加第二混合物至第一混合物以迄達到pH自約2至約4 而完全沉澱加料的二氧化鈦粒子。 以上各製法之固體微粒一氧化欽經過遽回收,清洗至洗 水離子導電率至約5 〇 〇微姆歐(微西門子)以下,隨後乾燥 並隨意煅燒。
一染料敏化的T i 02光電池的基本構態表現於圖1,含夾 〜型結構10 ’有加氟氧化錫玻璃(FT0)底質1 ;塗復感光染 料2的Ti02層;電解液3 ;與鉑鍍的錮—錫氧化物玻璃(I TO) 底質4。構造此結構時典型地將τ i 〇2溶液(或糊)隨意刮刀 或網印於加氟氧化錫玻璃(1)上作成厚5 _ 1 〇公忽之薄膜。
然後在〜450 °C煅燒此膜。將膜簡單浸在含3 X 1〇-4 Μ順-二 (硫氰醯基Ν-雙(2, 2’ -二D比淀基-4,4,-二羧酸)-釕 (I I )二水合染料的乙醇溶液内感光染料遂澱積在T i 粒子 上。已吸收染料的T i 02膜(2 )乾燥後夾置以鉑鍍銦—氧化錫 玻璃(4)形成光電池。電解液(例如〇. 5M碘化鋰與〇, 〇4M工2 在4 : 1碳酸乙烯酯/乙腈内)隨後抽進電池。以膠黏劑密封 電池完成加工程序。 1丁〇或FTO導電玻璃底質使用前以含氯乙烯之蒸汽脫脂劑 洗淨。零件在溶劑蒸汽中保持2〇 — 24小時。自脫脂劑内移 出後零件加熱至4〇〇 t:保持1小時經熱洗淨。
第8頁 522603 — —--- 五、發明說明(6) 錫^物:上㈣㈣鑛單位用㈣射將心積於鋼― :,氤燈照明下測量光電池的電流_電壓曲線檢定盆 電路光i::也之ϊ效率77全盤係由短路光電流密度‘,開放 管.% i oc,填充因數{f,及入射光強度I用下式計 π 全盤= iPh · Voc · ff/i 經校正的太陽⑥’量得之光電效果不符合曰 兄下貫際轉換效率。測得之值相對地供比較目的用。 n],體亡按葛雷萃等(前引)所述程序。手套箱内置 • m兴丙醇鈦於小滴液漏斗中。漏斗加蓋移出手套 =妾=一圓f燒瓶,其中含75mL 0· 1M頌酸在高純度水的 見力/之在氮氛下劇授中將T i物料徐緩滴入硝酸液。全邻 =力:熱此液,简授>8小時成清液。渡L;: 去塵屑與一切微粒。 t水调整溶液量至7〇rnL,隨後不加搖動於23 5 °c壓熱12 f ^。乳白漿液經超音波澈底混合後於室溫旋轉蒸發至最 後肢積35mL。添加ig聚乙二醇(分子量Η,。⑽)作黏度加強 劑/結合劑後於薄膜澱積前用此白色漿液作Ti02膜之網板 印刷。 主FT〇上殿積的膜在流動空氣中於4 5 0 °C燒結1小時然後浸 /貝木料。以此T i 〇2用前述程序構造光電池。自一氙燈
第9頁 522603 五、發明說明(7) (^8785-101)於25mw/cm2之光強度中測得效率為2 此電池作參考。 · /0 用 實例2 本例中用傳統氯氧化法製備用之較大粒子尺寸的 Τ 1 02。氯氧化法内提純的T i C丨在〇 - M k升及、准持初步1¾段内反應劑之溫度者一齊燃燒。反應 為、内必要核晶以促進顏料粒子的形二凡 心 ί - ^ ^ ^ ^ 烕欲達成此點須引進 猎燃燒烴類。另外,氣流中加少量
SlCWPCl3以抑制金紅石相生成 顏料之氣體經迅速冷卻以儘量、读+ A e贫午往陝攜f 以蒸汽加熱脫除全部所疋^月洗染料至中性則時 最,一步係藉介體碾磨洗過的顏料縮減粒子及燒 =塊大小。敢後τ1〇2有平均(d50)粒子大小41〇隨之銳鈦鑛 在發自氙燈的 。本例說明傳統大TiO; 以此T i 〇2用前述程序構造光電池。 2 5 m W / c m光強度下測得效率為〇 · 〇 4 % 粒子(即無孔者)作光電池用途無效 實例3 a ·製備、、稀釋(c u t ) // τ丨c 1 *溶液 四負謹慎使純TiCl4與脫離子(di)水反應製成 四乳彳鈦水浴液。務必採取許多警戒措施以此反 Γ:?14之危險本性及其接觸水時發生之強烈 •…反應。用水稀釋Tici4結果形成氯氧化鈦,但為此等
第10頁 522603 五、發明說明(8) —一" ------ 研5寸用之含水TiCl4溶液宜稱作、、稀釋的"TiCh。 ―以DI水稀釋TiCi4係在3 —公升四頸圓底玻璃燒瓶内進 灯。插π枝帶特氟隆Tef 1 on®塗層漿的加過潤滑脂之玻棒-。中 、内並連接貝驗至馬達。側頸内插一潤滑的冷凝 器、,頂上配置橡膠隔板,有針筒插過於反應期間提供氮氣 沖洗使g璃燒瓶内保持最低空氣濕度。第三頸内插一 T e f 1 ο n R旎頭的滴液漏斗有側臂者,其後可加料τ丨。1 $溶 ,用以饋送其液入玻瓶中所含的DI水内。瓶之小側頸4内插 一支加過潤滑脂的溫度計俾能偵監反應期間溫度。 玻^燒瓿夾持於竿使穩定,降入一含冰與水的塑膠内中麵| 途。加1 0 0 0公克冰冷D I水於玻璃瓶中。啟動水與氮氣沖洗 攪拌。含得自 Aldrich Chem· Co.,Inc·的99. 9%1^(:14溶 液(目錄#20, 8 5 6-6 )已經冰凍約30分鐘之1公升玻璃瓶隨後 開放以減少發煙。冷凍瓶開啟時藉助玻璃漏斗將τ丨c丨4溶 /夜傾入滴液漏斗。加約4 5 0公克T i C 14液,於是插入一橡膠 ^板鬆弛地加盍滴液漏斗。隔板並非用以封密漏斗開口而 僅將其加蓋容許進入之氮氣沖洗得以逸出。隨後開放滴液 漏斗於不斷攪動中緩慢添加T i C 1 *溶液入玻璃燒瓶内;東水 中。添加速度變化以保持瓶内液溫在1 〇與4 〇 °c間。如所期 盼,由T i C U與水反應在燒瓶内的強煙產生蒸汽濃霧,但你 此煙主要因凍水冷凝器功能適當而扼制在瓶中,僅痕量蒸 汽自滴液漏斗頂輕覆的橡膠蓋板中排出。 此反應期間二次加料T i C I4溶液於滴液漏斗使總計加 1107公克。TiCU加料完全後用1〇8公克DI水淋洗玻璃反應
第11頁 522603 五、發明說明(9) 器侧壁。D I水添加總量為1 1 0 8公克。'v稀釋的// T i C 14的 黃色透明液有實測重量2 1 7 1公克(理論重量=2 2 1 5公克)。 此44公克之差主要歸因於反應過程中HC 1 :水汽損耗。 ''稀 釋的"T i C 14液内理論的T i C 14濃度若無物質耗失則係5 0 %。 烘乾一溶液之小試樣後在通風爐中於6 0 0 °C灰化1 5分鐘以 核對溶液的實際濃度。以灰化實驗所得T i 02克分子為基 礎、實測TiCl4濃度為47. 5%。 b.來自NaOH路線之多孔Ti 02粒子 加料7 5公克之5 0 % N a 0 Η水液於一 4 0 0 m 1燒杯,以一附接 實驗室馬達的Te f 1 on®包槳攪拌。滴液漏斗内加料1 〇 5 . 8 j 公克按照上述程序所製有通稱TiCl4濃度40%之、、稀釋夕 Tici4溶液。緩慢加此、、稀"TiCi4液於Na〇H水液,須約2〇 分鐘加完。漿液之最後pH為3,反應期間察見最高溫度在 70與90 °C間。用濾紙轉移淤漿至一瓷漏斗(Ucm直徑),以 約3公升DI水清洗至2〇微姆歐之離子導電率。總計 間5小時。 ; 自汞侵入數據測得的鬆密度為〇 4〇 g/cc,βΕΤ表面 404 m2/g。用氮侵入數據算出h 7 χ 1〇_9公尺(1 7埃)盥、 Χ 10-9公尺(3, 0 0 0埃)間之BJH累積孔隙解吸表、面積為 519 ,同樣範圍間孔隙之BJH累積解吸孔隙度為、,’,’ 〇θ Λ .M's ^ ^ ^ ^ # - ^ .. 日日大4 4. 3X10 9公尺的1〇〇%銳鈦 數d16、‘及d84分別為^.。川乃公忽。…… c.來自ΝΗ,ΟΗ路線之多孔Τι〇2粒子
522603 五、發明說明(10) 加料142公克用冰浴凍冷的NH4〇H( 28-3 0%)於一40 Oral 燒杯,用一 T e f 1 ο η®包覆的漿附帶於馬達攪拌。用一蠕動 泵以每分鐘15〇:速度遞送195公克1^(:14:01水(40/6(^1:%) 至快速攪動的ΝΗ4〇Η中。 沉殿之終點pH為3,反應期間察見最高溫度6 〇 - 6 5 °C間。 用一玻璃多孔漏斗濾過稠漿,以1 〇公升D I水清洗至離子 電導率7微姆歐。洗後濾得的氧化物在1 2 5 °C乾燥。 由汞浸入數據測得之鬆密度為〇 . 6 4 g/ cc,、;翏入容量為 1 · 03 g/ cc。BET表面積係3 9 4 m2/g,結晶粉相鑑定為1 〇 〇% 銳鈦礦。 d·碾磨多孔Ti〇2粒子 實例3 b或3 c中沉澱已乾的氧化物先用杵臼打碎至-5 0 目大小。氧化物於5 0 0 °C煅燒1小時後加入一#〇〇橡膠襯裏 球磨機至半滿之高密度1 〇mm YTZ介體。用異丙醇作碾磨溶 劑,加入含介體與試樣的碾機内直到浪面掩蓋碾機中之介 體/試樣,典型2 0 0 cc。於是以180rpm速度轉動碾贏總計18 小時。所得淤漿在熱板上低熱4小時乾燥。燒結塊大小碾 磨後降至· 5-· 7 //之d50。 i.例4 此電池中所用T i 02係按實例3c製作旅依3d礙細。用標準 厚膜技術製備一稠糊含3份聚合物溶液(—萜品醇内重量 比1 0%聚合物.固體)對1份Ti02。藉傳統網印技術將此糊塗 敷於FTO底質。印製部分於1 25 °C乾燥,在40 0 °C燒結1小 時。
第13頁 522603 五、發明說明(11) 用前述程序自此等燒結試樣構造光電池。在氙光強声 25mW/cm2 時效率為3. 5%。 實例5 此試樣用實例4所述技術製備。但網印底質的燒結溫 提高至5 5 0 °C經1小時。 人 由此等燒結試樣用前述程序構造一光電池。在氙燈的 25mW/cm2光強度下效率為3. 5%。 、 實例6
此電池内所用T i Ο?係按實例3b製作並依3(1碾細。已 碾細T 1 〇2先分散於異丙醇中,任其沉降i小時。藉分散I的 分級移除大粒子與燒結塊(>1公忽)。用一H〇riba La〜5⑽ 粒子大小^析器測量粒子大小,發現有· 5公忽平均大小。 其次用實例4所述程序製備試樣。此等經網印二次( 間乾燥)以增加燒結膜厚度。零件於45〇它燒結i小 衣 平均火燒厚度8 · 4公勿。 $ 的 用妯述私序由此等燒結試樣構造光電池。在氙燈 25mW/cm2光強度下效率為3.3%。 實例7 3:二二=6所用分級叫製作。有機/無機比率由 - :-" - - - ° -J ’有平均火燒厚度8 · 9公忽。 用前t程序自此等燒結試樣構造-光電池。在氙产的 25mW/cm2光強度下效率為3,5%。 在呵4的
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CA2020170A1 (en) * | 1989-07-05 | 1991-01-06 | Brian O'regan | Photoelectrochemical cells using metal oxide ceramic membranes |
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| FR2694451B1 (fr) * | 1992-07-29 | 1994-09-30 | Asulab Sa | Cellule photovoltaïque. |
| EP0737358B1 (fr) * | 1993-12-29 | 1999-02-03 | Ecole Polytechnique Federale De Lausanne | Pile photo-electrochimique et electrolyte pour cette pile |
| US5407464A (en) * | 1994-01-12 | 1995-04-18 | Industrial Progress, Inc. | Ultrafine comminution of mineral and organic powders with the aid of metal-carbide microspheres |
| JP2992464B2 (ja) * | 1994-11-04 | 1999-12-20 | キヤノン株式会社 | 集電電極用被覆ワイヤ、該集電電極用被覆ワイヤを用いた光起電力素子及びその製造方法 |
-
1998
- 1998-05-18 US US09/080,653 patent/US6075203A/en not_active Expired - Lifetime
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1999
- 1999-02-25 TW TW088102850A patent/TW522603B/zh active
- 1999-05-18 CN CN99806409A patent/CN1301393A/zh active Pending
- 1999-05-18 PL PL99344588A patent/PL344588A1/xx unknown
- 1999-05-18 JP JP2000553967A patent/JP2002518822A/ja active Pending
- 1999-05-18 KR KR1020007012914A patent/KR20010043697A/ko not_active Abandoned
- 1999-05-18 WO PCT/US1999/010899 patent/WO1999065045A2/en not_active Ceased
- 1999-05-18 BR BR9911021-0A patent/BR9911021A/pt not_active IP Right Cessation
- 1999-05-18 EP EP99948030A patent/EP1086476A2/en not_active Withdrawn
- 1999-05-18 CA CA002330152A patent/CA2330152A1/en not_active Abandoned
- 1999-05-18 IL IL13961999A patent/IL139619A0/xx unknown
- 1999-05-18 AU AU61288/99A patent/AU764509B2/en not_active Ceased
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2000
- 2000-10-20 NO NO20005289A patent/NO20005289D0/no not_active Application Discontinuation
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| JP2002518822A (ja) | 2002-06-25 |
| AU764509B2 (en) | 2003-08-21 |
| WO1999065045A2 (en) | 1999-12-16 |
| BR9911021A (pt) | 2001-02-06 |
| WO1999065045A3 (en) | 2000-02-10 |
| KR20010043697A (ko) | 2001-05-25 |
| AU6128899A (en) | 1999-12-30 |
| IL139619A0 (en) | 2002-02-10 |
| CA2330152A1 (en) | 1999-12-16 |
| US6075203A (en) | 2000-06-13 |
| CN1301393A (zh) | 2001-06-27 |
| NO20005289L (no) | 2000-10-20 |
| PL344588A1 (en) | 2001-11-05 |
| WO1999065045B1 (en) | 2000-03-23 |
| EP1086476A2 (en) | 2001-03-28 |
| NO20005289D0 (no) | 2000-10-20 |
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