434§|§ A7 B7 五、發明説明（) 5-1發明領域： 本發明係有關於一種高亮度發光二極體及其製’, it透$ 法，特別是有關於一種具有以導電氧化物薄膜做爲丹 窗戶層之發光二極體。 5-2發明背景： ,7¾ 發光二極體之基本原理係藉由電子與電洞的％ \ 產生光，就PN接面而言，在順向偏壓時，電子或^ >與電 別注入空乏區域（depletion region)，這些注入的電·" 洞相互結合，其能量即以光的型式放出。 g冑結 經濟部中央標準局员工消费合作社印製 在傳統發光二極體之磷化鋁鎵銦（AlGalnP)雙具p 構（double hetero-structure, DH)中，包含形成於n遭砷化 鎵（GaAs)基村上的 η 型 AlGalnP 東缚層（ciadding layer)、 形成於束縛層上的AlGalnP活性層（active iayer)，及形成 於活性層上的p型AlGainP束縛層。當改變在發光元件活 性層中紹和鎵的比例時’可應用於製造波長68〇nm至 5 5 Onm之間的可見光區發光二極體。而在活性層兩侧為束 缚層（claddUg layer)，具有侷限載子的功能，可提高發光 效率 近年來’為了提向發光二極體之亮度及效率，許多 本纸張尺度用巾國财縣( 21()x297^j· 43 49 2 ο Λ7 -____in __________ 五、發明説明（） 不同之改良結構及技術被研究提出，例如以導電性的窗戶 層（window layer)長在雙異質結構上，以增加電流的擴散； 或者’在傳統的雙異質結構中活性層被改以多重量子井 (multi quantum well，MQW)結構取代，使得發光二極體之 發光亮度提高，發光強度與電流之間的線性度變好。 在習知技術中，美國專利第5,008,7 1 8號之發光二極 體’參考第一圖，此種發光二極體之結構包含：一 η型GaAs 基材10、一 η塑AlGalnP束縛層11、一未摻雜AlGalnP 活性層12、一 p型A1 Gal nP束缚層13、一窗戶層14、及 背面電極15和正面電極16〇其主要特點在p型AlGalnP 束缚層上長一層電阻係數低、導電性佳且能隙大於活性層 能隙之窗戶層，使電流能均勻地擴散分佈。 經漭部中夹標準局負工消费合作社印聚 適於製作窗戶層之材料如砷化鋁鎵（AlGaAs)、磷砷化 鎵（GaAsP)或磷化嫁（GaP)等。其中 AlGaAs之晶格常數與 GaAs基材相匹配（lattice matched)，可使用於波長為紅光 至黃光的發光二極體；至於波長更短的發光二極體，則採 用能隙較高的GaAsP或GaP做為窗戶層，由於此種材料 具有與基材不匹配（lattice mismatched)的缺點，而影響到 元件的操作壽命’且其厚度一般均在五至數十微米之間， 其中以GaP做為窗戶層時’由於其成長溫度較高，必須 藉由兩次成長方式，即GaP窗戶層及其以下結構分別在 二個MOCVD反應室中成長.，因此增加元件製作的時間與 本紙張尺度適用中國國家榡毕（CNS ) Λ4故松（2ΐ〇χ 297公筇）434§ | § A7 B7 V. Description of the invention (5-1) Field of the invention: The present invention relates to a high-brightness light-emitting diode and its manufacturing method, and it relates to a method having a conductive oxide. The film is used as a light-emitting diode of the Dan window layer. 5-2 Background of the Invention: The basic principle of the 7¾ light-emitting diode is to generate light by the% \ of the electron and the hole. As for the PN junction, the electron or ^ > Injected into the depletion region, these injected electricity " holes are combined with each other, and their energy is emitted in the form of light. g The Consumer Co-operative Society of the Central Standards Bureau of the Ministry of Economic Affairs printed on the conventional double-structure (AlGalnP) double-luminum structure (AlGalnP) of traditional light-emitting diodes, including gallium arsenide formed in n (GaAs) n-type AlGalnP ciadding layer on the base, AlGalnP active iayer formed on the tie layer, and p-type AlGainP tie layer formed on the active layer. When changing the ratio of Schor and gallium in the active layer of the light-emitting element ', it can be applied to manufacture a light-emitting diode in the visible region with a wavelength between 680 nm and 55 Onm. On the two sides of the active layer are claddUg layers, which have the function of limiting carriers, which can improve the luminous efficiency. In recent years, in order to improve the brightness and efficiency of light-emitting diodes, many paper-sized towels have been used. (21 () x297 ^ j · 43 49 2 ο Λ7 -____ in __________ 5. Description of the invention () Different improved structures and technologies have been studied and proposed, for example, conductive window layers are grown on double heterostructures, To increase the diffusion of current; or 'in the traditional double heterostructure, the active layer is replaced by a multiple quantum well (MQW) structure, which improves the luminous brightness of the light-emitting diode, and the The linearity becomes better. In the conventional technology, the light emitting diode of US Patent No. 5,008,7 1 8 is referred to the first figure, and the structure of this light emitting diode includes: an n-type GaAs substrate 10, a η-plastic AlGalnP tie layer 11, an undoped AlGalnP active layer 12, a p-type A1 Gal nP tie layer 13, a window layer 14, and a back electrode 15 and a front electrode 16. Its main characteristics are on the p-type AlGalnP tie layer A layer of resistance The window layer with low number, good conductivity, and energy gap larger than that of the active layer enables the current to be evenly distributed and distributed. The standard office of the Ministry of Work and Consumer Cooperatives printed materials suitable for making window layers such as aluminum arsenide Gallium (AlGaAs), GaAsP or GaP, etc. Among them, the lattice constant of AlGaAs and the GaAs substrate are matched (lattice matched), which can be used to emit light with wavelengths from red to yellow Diodes; As for light-emitting diodes with shorter wavelengths, GaAsP or GaP with higher energy gaps are used as the window layer. This material has the disadvantage of being mismatched with the substrate, which affects the device. 'Operating life' and its thickness is generally between five and several tens of micrometers. Among them, when GaP is used as the window layer ', because of its high growth temperature, it must be grown twice, namely, the GaP window layer and the following structures. They are grown in two MOCVD reaction chambers respectively. Therefore, the time for component production and the paper size are applicable to the Chinese National Standards (CNS) Λ4 Gu Song (2ΐ〇χ 297 公 筇)
五、發明説明（） 成本。 參考第二圖，因為砷化鎵基材的能隙較AlGalnP活 性層的能隙小，從活性層發出的光大部分會被GaAs基材 戶斤吸收’為了提高發光效率，在美國專利第5,3 76,5 80號 的習知技術中揭露另一種結構，其結構包含：一 η型GaP 基材20、一 n型AlGalnP束缚層21、一未摻雜的AlGalnP 活性層22、一 p型AlGalnP束縛層23、一 p型GaP窗戶 層24、一正面電極25及一背面電極26 =其主要是利用化 學蝕刻法將如第一圖所示的發光二極體結構中的砷化鎵基 材蝕刻掉，而剩下約5 0微米的磊晶層，然後再利用晶片 貼合（wafer bonding)的技術，將厚約3 50微米的GaP基材 貼附上去，形成具有透光基材的AlGalnP發光二極體。然 而，此種方法由於須處理僅 5 0微米厚的薄膜，且須避免 其破裂，製程相當困難，故而在產率上會受到不利的影響。 經濟部中央標準局月工消贤合作社印¾ 第三圖顯示另一習知發光二極體結構，係揭露於美 國專利第5，4 8 1,1 2 2號之專利中。與第一圖相同之層則以 相同圖號來表示。其主要特點在原 GaP窗戶層以p型接 觸層31及導電透光氧化層32來取代，其中形成p型接觸 層3 1的材料可為GaAsP、GaP或是GaAs。至於構成透光 窗戶層32的氡化物可為氧化錫（SnO)、氧化銦（InO)或氧 化姻錫（indium-tin oxide, ITO)等，於可見光範圍内之透光 率接近 90。/。，其電阻係數約 3xlCr4D-cm，大約為 p型 -4- 本纸張尺度適用中國國家摞挛（CNS ) Λ4规梢（210X297公;ίί ) A 7 ii7 五、發明説明（5. Description of the invention () Cost. Referring to the second figure, because the energy gap of the gallium arsenide substrate is smaller than that of the AlGalnP active layer, most of the light emitted from the active layer will be absorbed by the GaAs substrate. In order to improve the luminous efficiency, in US Patent No. 5, Another conventional structure disclosed in 3,76,5,80 includes a η-type GaP substrate 20, an n-type AlGalnP tie layer 21, an undoped AlGalnP active layer 22, and a p-type AlGalnP. Tie layer 23, a p-type GaP window layer 24, a front electrode 25 and a back electrode 26 = It mainly uses a chemical etching method to etch the gallium arsenide substrate in the light emitting diode structure shown in the first figure The epitaxial layer with a thickness of about 50 micrometers is left, and then a wafer bonding technology is used to attach a GaP substrate with a thickness of about 350 micrometers to form an AlGalnP light-emitting material with a light-transmitting substrate. Diode. However, this method is difficult to process because it has to deal with a film that is only 50 micrometers thick, and it must avoid cracking, which adversely affects the yield. Printed by the Central Laboratories of the Ministry of Economic Affairs, the Monthly Cooperative Consumers' Co-operative Society ¾ The third picture shows another conventional light-emitting diode structure, which is disclosed in US Patent No. 5,4 8 1, 1 2 2. The same layer as the first figure is indicated by the same figure number. Its main feature is that the original GaP window layer is replaced by a p-type contact layer 31 and a conductive light-transmissive oxide layer 32. The material forming the p-type contact layer 31 may be GaAsP, GaP, or GaAs. As for the halide forming the light-transmissive window layer 32, tin oxide (SnO), indium oxide (InO), or indium-tin oxide (ITO) can be used. The transmittance in the visible light range is approximately 90. /. , Its resistivity is about 3xlCr4D-cm, which is about p-type. -4- This paper size is applicable to the Chinese National Contracture (CNS) Λ4 gauge (210X297 male; ί) A 7 ii7 5. Description of the invention (
AlGalnP電阻之千分之一，且為p型Gap電阻之百分之—。 而介於〇 1至5微米之最佳厚度層無法有效利用從晶 粒側面發出的光’因而侷限發光二極體之發光效率。 有签於上述習知技術的缺點及問題，本發明提出_ 種高亮度的發光二極體之結構，用以克服前述各習知技術 所面臨的困境。 5-3發明目的及概述： 本發明之目的為提供一種高亮度發光二極體，結構 簡單，降低製作成本。 本發明之又一目的為提供一具有導電透光氧化層為 ώ戶層之尚亮度發光二極體，以提高發光效率。 經濟部f央標準局男工消f合作社印裂 本發明所揭露之高亮度半導體發光元件，例如發光 二極體（LED)或雷射二極體（LD)等，包含一第一導電型砷 化鎵（GaAs)基材及一第一導電型填坤化鎵（GaAsp)層形成 於該基材上用以增加基材之能隙，一第一導電型分佈式布 拉格反射層形成於該GaAsP層上，一磷化鋁鎵銦（AlGalnP) 雙異質結構形成於該布拉格反射層上，包含一第一導電型 AlGalnP之第一束缚層 '一未摻雜AlGalnP活性層及一第 二導電型AlGalnP之第二束、缚層，其中来摻雜AlGalnP活 本紙張尺度適用中國國家捃準（CNS ) Λ4说核（210X297公# } 4 3492 0 A7 B7 五、發明説明 ih 先 閲 讀. 背 之 注 意 事 項 再 填 寫 本 頁 性層亦可為多重量子井結構，一第二導電型之低能隙且高 導電性材料層形成於AIGalnP雙異質結構上，一第二導電 型AlZnO(x)窗戶層隨後形成於該低能隙層上方。 5-4圊式簡單說明： 第一圖 描繪第一個習知技術發光二極體之結構截面 圖。 " 第二圖 描繪第二個習知技術發光二極體之結構截面 圖。 第三圖 描繪第三個習知技術發光二極體之結構截面 圖。 第四圖 描繪本發明之半導體發光元件第一個較佳實施 例結構截面圖。 第五圖 描繪本發明之半導體發光元件第二個較佳實施 例結構截面圖。 圖號對照說明如下： 4 0 基材 41 第一束縛層 42 未摻雜AIGalnP活性層 經濟部中央標隼局負工消费合作社印餐 4 3 第二束縛層 44 AlZnO(x)透光窗戶層 4 5 p型電極 46 η型電極 本紙張尺度適用中囷國家插準（CNS } 見格（210X29M># ) 434aa g Λ7 ______H7 五、發明説明（） u'' 47 n 型 GaAsP 層 51 反射層 52 P型歐姆接觸層 5-5發明詳細說明： 參考第四圖，描繪本發明之半導體發光元件之結構 截面圖，本發明之基材40材料可為η型GaAs或雙層結 構η型Ga AsP於η型GaAs上或η型GaA sP於n型Qap 上，其中η型GaAsP層47利用有機金屬氣柏蟲晶法 (MOVPE)直接成長於基材40上，用以增加基材4〇之能隙， 該基材40之厚度範圍約300至350微米，而η型GaAsP 層4 7厚度範圍約在0.5至1 5微米，一 η型鱗化銘鎵姻 (AiGalnP)之第一束縛層41形成於該η型GaAsP層47上， 而η型AlGalnP層41之上為一未接雜AlGalnP活性層42， 一 p型磷化鋁鎵銦（AlGalnP)之第二束縛層43隨後形成於 該活性層 4 2之上方，此三層為利用有機金屬氣相蟲晶法 (MOVPE)依序地成長，於本發明之結構中’未摻雜A1GaInP 活性層42亦可為一 AlGalnP多重量子井結構。 經满部中央標準局貝工消贽合作·社印奴 形成本發明半導體發光元件之窗戶層，利用物理氣 相沉積法（PVD)或有機金屬氣相沉積法（MOCVD)等技術， 形成一 AlZnO(x)層44於該p型AlGalnP東縛層43之上 做為窗戶層，成長一 AlZnO(x)之透光窗戶.層44之溫度低 --~~— ---- -7- 一 本紙张尺度適用中國國家標準（CNS ) Λ4規核（2丨0X297公筇） 43492 0 Α7 Η 7 五、發明説明（） ih- 先- m 背 之 注 意 事 項 再 填广 寫'一 本 於3 0 0 °C，一 η型電極4 6被沉積於此晶圓基材之背部表 面上’然後一 Ρ型電極45被沉積於Α1Ζη0(χ)透光窗戶 層44之上。 ΑΙΖηΟ(χ)透光窗戶層44與ρ迤AlGaInP束缚層43 之間無晶格不匹配的問題，其厚度範圍約在0.1至10微 米，且在可見光波長範圍内之穿透度大於8 〇 %，此外，此 種透光窗戶層不會吸收由活性PN.接面層所放出—的光，而 且’ AlZnO(x)透光窗戶層44之電阻係數只有約1 ·34χ 1 0·4 Ω-cm，因此，所注入的電流可快速擴散至整個元件而轉 換成高輸出功率。 訂 經濟1邵中央標卑局員工消费合作社印製 本發明之另一較佳實施例如第五圊所示，其中與第 四圖相同的層以相同的標號表示，一 η型分佈式布拉格反 射層（distributed Bragg reflector, DBR) 51 成長於基材 47 之 上，反射層 51的厚度為元件所放射光波長的四分之一 (λ / 4)，其村質可為多層結晶包含坤化鋁（A1A s)於砷化鋁鎵 (AlGaAs)上或磷化鋁銦（AllnP)於磷化鋁鎵銦（AlGalnP) 上’一 η型AlGalnP第一束缚層41形成於該DBR層上， 而η型AlGalnP層41之上為一未掺雜AlGalnP活性層42， 然後一 p型磷化紹鎵銦（AlGalnP)之第二東缚層ο形成於 該活性層42之上方，一 P塑歐姆接觸層刃形成於哼^型 AWahP之第二束缚層43上，隨後〜Α1Ζη〇(χ)透光窗戶 層44成長於該ρ型歐姆接觸層52之上，用於形成ρ型歐 本紙张尺度適用中國國家標準（CNS ) Λ心兄梢（210X297公]Γ 43492 ο Λ 7 Β7 五、發明説明（） 姆接觸層52之材料有砷化鎵（GaAs)、砷磷化鎵（GaAsP)或 磷化鎵（GaP)，一 η型電極46被沉積於此晶圓基材之背部 表面上，然後一 ρ型電極45被沉積於ΑΙΖηΟ(χ)透光窗 戶層44之上。 本發明以一較佳實施例說明如上，僅用於藉以幫助 了解本發明之實施，非用以限定本發明之精神，而熟悉此 領域技藝者於領悟本發明之精神後，在不脫離本發明之精 神範圍内，當可作些許更動潤飾及等同之變化替換，其專 利保護範圍當視後附之申請專利範圍及其等同領域而定。 經濟部中央標隼局Λ工消f合作社印犁 本紙張尺度適用中國國家標準（CNS ) Λ4規格（210X2?7公幼)AlGalnP resistance is one thousandth, and is 100% of p-type Gap resistance. However, an optimal thickness layer between 0.01 and 5 microns cannot effectively utilize light emitted from the side of the crystal grains, thereby limiting the light emitting efficiency of the light emitting diode. In view of the disadvantages and problems of the above-mentioned conventional technologies, the present invention proposes a structure of high-brightness light-emitting diodes to overcome the difficulties faced by the aforementioned conventional technologies. 5-3 Object and Summary of the Invention: The object of the present invention is to provide a high-brightness light-emitting diode, which has a simple structure and reduces manufacturing costs. Another object of the present invention is to provide a high-brightness light-emitting diode with a conductive light-transmitting oxide layer as a household layer, so as to improve the light-emitting efficiency. The Ministry of Economic Affairs, the Central Standards Bureau, the Male Workers, and the Cooperatives printed the high-brightness semiconductor light-emitting elements disclosed in the present invention, such as light-emitting diodes (LEDs) or laser diodes (LDs). A GaAs substrate and a first conductive GaAsp layer are formed on the substrate to increase the energy gap of the substrate. A first conductive distributed Bragg reflector is formed on the GaAsP. On the layer, a double heterostructure of AlGalnP (AlGalnP) is formed on the Bragg reflective layer and includes a first binding layer of a first conductivity type AlGalnP, an undoped AlGalnP active layer and a second conductivity type AlGalnP The second bundle, binding layer, in which doped AlGalnP living paper size is applicable to China National Standards (CNS) Λ4 said core (210X297 public #) 4 3492 0 A7 B7 V. Instruction of the ih Read first. Notes on the back Fill in this page. The layer can also be a multiple quantum well structure. A second conductivity type low energy gap and high conductivity material layer is formed on the AIGalnP double heterostructure. A second conductivity type AlZnO (x) window layer is then formed on Above the low energy gap layer. Brief description: The first figure depicts the cross-sectional structure of the first conventional technology light-emitting diode. &Quot; The second figure depicts the cross-sectional structure of the second conventional technology light-emitting diode. The third figure depicts the third A cross-sectional view of a structure of a conventional light-emitting diode. A fourth cross-sectional view is a cross-sectional view of a first preferred embodiment of a semiconductor light-emitting element of the present invention. A fifth cross-sectional view is a second preferred embodiment of a semiconductor light-emitting element of the present invention. The cross-section of the structure is illustrated as follows: 4 0 Substrate 41 First binding layer 42 Undoped AIGalnP active layer Central Ministry of Economic Affairs Ministry of Economic Affairs Bureau Consumers Cooperative Press 4 3 Second binding layer 44 AlZnO (x) transparent Light window layer 4 5 p-type electrode 46 η-type electrode This paper is applicable to China and China National Standards (CNS} See (210X29M >#) 434aa g Λ7 ______H7 V. Description of the invention () u '' 47 n-type GaAsP layer 51 Reflective layer 52 P-type ohmic contact layer 5-5 Detailed description of the invention: Referring to the fourth figure, a structural cross-sectional view of the semiconductor light-emitting element of the present invention is described. The material of the substrate 40 of the present invention may be η-type GaAs or a double-layer η-type. Ga As P on η-type GaAs or η-type GaA sP on n-type Qap, wherein the η-type GaAsP layer 47 is directly grown on the substrate 40 by using an organometallic cypress method (MOVPE) to increase the substrate 40. Energy gap. The thickness of the substrate 40 ranges from about 300 to 350 micrometers, and the thickness of the η-type GaAsP layer 47 ranges from 0.5 to 15 micrometers. A first binding layer 41 of η-type scaled indium gallium (AiGalnP) Formed on the n-type GaAsP layer 47, the n-type AlGalnP layer 41 is an undoped AlGalnP active layer 42, and a second binding layer 43 of p-type aluminum gallium indium phosphide (AlGalnP) is subsequently formed on the active Above the layer 42, the three layers are sequentially grown using an organometallic vapor phase worm crystal (MOVPE) method. In the structure of the present invention, the 'undoped A1GaInP active layer 42 may also be an AlGalnP multiple quantum well structure. The window layer of the semiconductor light-emitting element of the present invention is formed by the Ministry of Central Standards Bureau ’s workmanship, cooperation, and social security. The technology uses physical vapor deposition (PVD) or organic metal vapor deposition (MOCVD) and other techniques to form an AlZnO. The (x) layer 44 is used as a window layer on the p-type AlGalnP east-bound layer 43 to grow an AlZnO (x) light-transmissive window. The temperature of the layer 44 is low-~~----- -7- This paper size applies Chinese National Standards (CNS) Λ4 Regulation (2 丨 0X297) 492 4492 0 Α7 Η 7 V. Description of the invention () ih- Note on the back of -m and fill in '1 in 30 At 0 ° C, an n-type electrode 46 is deposited on the back surface of the wafer substrate, and then a P-type electrode 45 is deposited on the A1Zη0 (χ) light-transmissive window layer 44. There is no problem of lattice mismatch between the light-transmissive window layer 44 and the ρ 迤 AlGaInP binding layer 43. The thickness range is about 0.1 to 10 microns, and the transmittance in the visible wavelength range is greater than 80%. In addition, such a light-transmissive window layer will not absorb light emitted by the active PN interface layer, and the resistivity of the AlZnO (x) light-transmissive window layer 44 is only about 1.34χ 1 0 · 4 Ω- cm, therefore, the injected current can be quickly spread to the entire element and converted into high output power. Ordering Economy 1 Another preferred embodiment of the present invention printed by the Shao Central Standard and Beneficial Bureau Consumer Cooperative is shown in Figure 5 (a), where the same layers as in Figure 4 are denoted by the same reference numerals, and an n-type distributed Bragg reflection layer (Distributed Bragg reflector, DBR) 51 grows on the substrate 47, the thickness of the reflective layer 51 is a quarter (λ / 4) of the wavelength of the light emitted by the element, and its village quality can be a multilayer crystal containing Kunhua aluminum ( A1A s) on AlGaAs or AlNP on AlGalnP A-type AlGalnP first binding layer 41 is formed on the DBR layer, and η-type Above the AlGalnP layer 41 is an undoped AlGalnP active layer 42, and then a second east-bound layer of p-type gallium indium phosphide (AlGalnP) is formed over the active layer 42. A P-plastic ohmic contact layer edge It is formed on the second binding layer 43 of the humming type AWahP, and then ~ A1Zη〇 (χ) transparent window layer 44 grows on the ρ-type ohmic contact layer 52, and is used to form a ρ-type European paper. Standard (CNS) Λ Heart Brother (210X297) Γ 43492 ο Λ 7 Β7 V. Description of the invention ( The material of the contact layer 52 is gallium arsenide (GaAs), gallium arsenide phosphide (GaAsP), or gallium phosphide (GaP). An n-type electrode 46 is deposited on the back surface of the wafer substrate, and then a ρ A type electrode 45 is deposited on the AIZZnO (χ) light-transmissive window layer 44. The present invention is described above with a preferred embodiment, and is only used to help understand the implementation of the present invention, and is not intended to limit the spirit of the present invention, and After knowing the spirit of the present invention, those skilled in this field can make minor modifications and equivalent changes without departing from the spirit of the present invention. The scope of patent protection shall be regarded as the scope of the attached patent application and its equivalent. It depends on the field. The Central Standards Bureau of the Ministry of Economic Affairs Λ Industrial Consumers Cooperative Cooperative Printing Paper Size Applicable to Chinese National Standard (CNS) Λ4 Specification (210X2? 7 Male and Young)