經濟部中央標準局員工消費合作杜印製 A7 B7 五、發明説明（1 ) 發明領域 . 本發明與半導體製作有關，更詳細地說，它是與光學 製版中使用的光阻_叠[_面_最佳化有關。 發明背景 I -- 當半導體元件的Z，方向丕斯縮小，舞可避免地，製作 半導體元件所用ill羞膜也跟著愈來愈薄，mMMMMMM 的:硬免罩層也不例外。絕緣溝是用來隔離基材上的各個元 件’它涉及在基材上沈積硬光差(1^姐1 mask)層。典型的硬 患、罩層是一層氧化物薄要及一复氫化物，在硬光罩層上成 形一所需的光阻圖案尬Qt〇resist pattern)，接著利用該光 阻圖案餘刻硬光罩_以形減硬光軍，接著利用談硬光溪為 刻半導體基材。 •v 半導體元件z-方向的尺寸缩小，當然硬光罩中之氮化物廣 的厚度也需要縮減。不幸的是，改變氮化物層的厚度，將 導致許多不欲見到的光螢效應。特別是在光阻亂案18的底 部形成一"足部"20，如圖〗所示。此外，視氮化物層的厚 度，"足部”20也會受縮小投H光機(stepper)之夜長的影 響。圖1所示之氧化物墊12厚度約】5α埃，成形於半導體基 材1〇之上，一氮化物層]4尾廋約1500埃，成形於氧化物層 12之上’光阻圖案〗8成形於氮化物層η之上。該"足部，，2〇 是光與光阻屬案1¾、基蛀m及其、它主胤曆J2、14交互作用 的結果。改變氮化物層厚度是為了·均如域見少艰滅 。不過’氮化物層14的厚度從識Q埃致變到七㈨埃，在此 本紙張尺度適用中國國家標準（CNS ) M規格（21〇><297公釐） (請先閲讀背面之注意事項再填寫本頁)Consumers' cooperation of the Central Bureau of Standards of the Ministry of Economic Affairs, printed by Du A7 B7 V. Description of the invention (1) Field of invention. The present invention relates to semiconductor manufacturing. More specifically, it relates to the photoresist used in optical platemaking. _Optimization related. Background of the Invention I-When the Z direction of a semiconductor element is reduced, the dance is unavoidable, and the ill film used in the manufacture of semiconductor elements is also becoming thinner and thinner. The mMMMMMM: hard cover layer is no exception. The insulation trench is used to isolate the individual components on the substrate. It involves depositing a hard mask layer on the substrate. A typical hard coating layer is a thin layer of oxide and a polyhydride. A desired photoresist pattern (Qt〇resist pattern) is formed on the hard photomask layer, and then the photoresist pattern is used to etch hard light. The mask _ reduces the hard light army, and then uses Tan Guangguang as a semiconductor substrate. • The z-direction size of the v semiconductor device is reduced. Of course, the thickness of the nitride in the hard mask also needs to be reduced. Unfortunately, changing the thickness of the nitride layer will lead to many unwanted photoluminescence effects. In particular, a "foot" 20 is formed at the bottom of the photoresist case 18, as shown in the figure. In addition, depending on the thickness of the nitride layer, " foot " 20 will also be affected by the reduction of the night length of the stepper. The thickness of the oxide pad 12 shown in FIG. A nitride layer is formed on the material 10, and the tail is about 1500 angstroms, which is formed on the oxide layer 12. The photoresist pattern is formed on the nitride layer η. The "foot," 2 It is the result of the interaction between light and photoresistance case 1¾, base 蛀 m and its main calendar J2, 14. The thickness of the nitride layer is changed in order to be less difficult than the domain. However, the nitride layer 14 The thickness has changed from Q Ang to Q Ang, and here the paper size applies the Chinese National Standard (CNS) M specification (21〇 > < 297 mm) (Please read the precautions on the back before filling this page)
Α7 Β7 五、發明説明（2 ) ·~ 狀沉將導致"足部”2〇形成。當光阻圖愛j8的底部與頂部寬 度不同時，即會造成氮:化物导14成形之磲光革亂案的尺寸 錯誤。此外，如果"足部"$0族飯刻崩間被腐蝕，硬光罩就 會有一斜的姐壁。最後，”足部"2〇釋會導致鐵誤的量測， 舉例來說’ ”足部"2〇很難放也上的靜瞄式電子顯微鏡急 :' (SEM)看到 解決此問題的習知技拖立括調整洗陳厚度，增加抗反 .... 射塗屋及頂部)及使用染立、的光阻。不過，這些消除光 阻"足部"的岁法中，沒有一種合人滿意。因此，實有需要 一種減少(消L除跋光埋：足部”的方法。 發明概述 本發明包括在硬走累的氮化物屋與光阻層間增加―光） 學·越助層。，此光學輔助展是透明或奎透明層，它的折射率 與氮化物層不同。例如’使用原娃酸四乙脂（即TE〇s， tetraethyoxysilane)層。藉後急學輔助層改變光阻層與基材 間的光學干擾，JL減、少/消除”足部"的形成。 經濟部中央標準局員工消費合作社印製 圖式簡述 一®1是習知技術之光阻圖案"足部"問題的戴面圖； 圖2-4是按本發明製造紙|彖溝之备階段的截面圖；以 及 ;圖5A_D是使用本發明之不-同名度:光逢ϋ助層後的光 阻圖案截面圖° -4- 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） 經濟部中央標準局員工消費合作社印製 A7 ___ B7 __________ 五、發明説明（3 ) 除非特別說明，各圖中的數字及符號是指示各對應部 分。 較佳具體實例銶知銳明 本發明現將配合製造絕緣溝所使用的光學製版程序說# 、明。很明顯，本發明的優點也能應用到其它需要考屢^£ 的場合，例如用於成形硅的局部氧化(LOCOS)嚴緣與其它 的足部問題，並包括那些不屬於硬光單的問題。 現請參閱圖2，形成硬光罩所需的各層(在本例中為層 12、14)沈積於基材1〇之上。一般來說，/硬光莩包括一層 氧化物ίρβ、及一屐氮f物層14 〇該氧化盤層12的厚度大約 為(¾埃’氮化物層14的厚度大約在^! ：> 〇 〇埃左右。不過， 本發明並不僅陴铃此特定的硬光罩組成，其它的硬光罩堆 叠方式顯然也適用本發明。 其次，在氮化物層一免學輔蓝廣10。光學辅 助層16是由透Ji或半透01材料所構成，它的折射率與展丨^ 在本例中為氮化物)不同。例如，光學辅助層使用Te〇s， 其它可用的材料包括··旦PSQ(b〇roph〇Sph〇silicate glass)、 非*^08的二羞化矽、鋁-氧化物或鋅·氧化物。 光學輔助層16的厚度必須根據其特直n佳化。考 慮因素包括··層L4的厚度’層Me下任一層—的厚度(在本 例中為層J2)，這些層的折射率，以及光學輔助層％所選 -材料的杜射率。舉例來說，氧化物層(層12)厚度15〇埃，' 氮化物層（層]4)厚1500埃，由丁E〇s所構成的光學辅助層 -5二 本紙張尺度適用中國國家標準（CNS〉A4^ (--------- (讀先聞讀背面之注意事項再填寫本頁)Α7 Β7 V. Description of the invention (2) · ~ The shape sinker will lead to the formation of "foot" 2. When the bottom and top widths of the photoresist map J8 are different, it will cause the formation of nitrogen: compound guide 14. The size of the chaos is wrong. In addition, if the "foot" is eroded between the nicks of the family rice, the hard mask will have an oblique wall. Finally, the "foot" will cause iron errors. For example, the measurement of "" foot " 2〇 is difficult to put on the static electron microscope urgently: "(SEM) seeing the conventional techniques to solve this problem, including adjusting the thickness of the washing, increasing Anti-reflective ... painted on the roof and the top) and using photoresist. However, none of these methods of eliminating photoresist "foot" is satisfactory. Therefore, there is a need for a The method of reducing (removing light and burying light: feet). SUMMARY OF THE INVENTION The present invention includes the addition of an optical layer between a hard-wearing nitrided house and a photoresist layer. This optically-assisted exhibition is a transparent or quasi-transparent layer, which has a refractive index different from that of the nitride layer. For example, 'a tetraethyoxysilane (TEOS, tetraethyoxysilane) layer is used. By using the auxiliary layer to change the optical interference between the photoresist layer and the substrate, JL reduces, reduces / eliminates the formation of the "foot". A brief description of the printed drawings of the staff consumer cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 1 Photo-resistance pattern of the conventional technique " foot "problem; Figure 2-4 is a cross-sectional view of the preparation stage of the paper | trenches according to the present invention; and; Figures 5A_D are the use of the present invention- Name of the same degree: Photoresistance cross-section view after the photo-assisted layer ° -4- This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 ___ B7 __________ V. Description of the invention (3) Unless otherwise specified, the numbers and symbols in the figures indicate corresponding parts. Preferred specific examples: Knowing the sharpness The present invention will now cooperate with the optical plate-making program used to manufacture insulation trenches. Obviously, the advantages of the present invention can also be applied to other occasions that need to be tested, such as the local oxidation of formed silicon (LOCOS) and other foot problems, including those that are not hard light Question. Now refer to Figure 2 The layers required to form the hard mask (layers 12 and 14 in this example) are deposited on the substrate 10. Generally speaking, the / hard film includes an oxide layer ρρ and a nitrogen layer 14 〇 The thickness of the oxide disk layer 12 is about (¾ angstrom), and the thickness of the nitride layer 14 is about ^ !: > 〇 angstrom. However, the present invention is not limited to this specific hard mask composition, and other Obviously, the hard mask stacking method is also applicable to the present invention. Secondly, the nitride layer is free of secondary blue 10. The optical auxiliary layer 16 is composed of a transflective Ji or semitransparent 01 material, and its refractive index and extension The nitride in this example) is different. For example, TeOs is used as the optical auxiliary layer. Other available materials include: PSQ (bolophosposilicate glass), non- * 08 silicon disulfide, aluminum -Oxide or zinc · oxide. The thickness of the optical auxiliary layer 16 must be optimized according to its special features n. Considerations include the thickness of the layer L4 'the thickness of any of the layers below the layer Me-(layer J2 in this example) ), The refractive index of these layers, and the% emissivity of the material selected for the optical auxiliary layer. For example, the oxide layer (layer 12) 15 Angstroms thick, 'Nitride layer (layer) 4) 1500 Angstroms thick, optical auxiliary layer composed of Ding Eos-5 Two paper sizes are applicable to Chinese national standards (CNS> A4 ^ (----- ---- (Read the notes on the back and then fill out this page)
經濟部中央標準局員工消費合作社印製 A7 -----—______；_ B7 五、發明説明（4 ) 厚度2〇α〇埃。 沈積光學辅助層J6後，在光學輔助層沒上成形光卩且每) 22。如圖3所示，對光阻層^^光美ft刻以形成ΙΑ圖案、24 °由於有光學輔助層16的存在，秦阻凰案2為的圖案底部不 再出現”足部"。光阻曆22與基材1〇間_學立擾因光學輔 助層16而減小，"足部"也被消除。 接著以光阻圖袭2Ϊ奮為光罩圭敛刻_層14與12以形成硬 . , . 光罩26，如圖4所示。由於足部不再出現，結果是硬光罩於 獲改善，它的側壁陡直，其圖案與光随凰案:2|頭部的圖案 完全相符。在硬光罩26成形後，去除光阻圖桌2、。如有需 要，此時也可將光學輔助層併去除。不過，層16也可 留下，等到下一階段再處理。接著，在基材1〇上致刻溝槽 。接著在該溝槽中填充傳統的材料这形成絕緣溝。 光學辅助層】6的厚度與其下方各層(在本例中為層12 、M)的厚度离祈射麥息息相關。在本例中層⑭是由氮化 物所構成’事實上，可以調擎(氮化物層)的厚度，並不一定 需要光學辅助層〗6。不過，物層調整到適當厚度並 不一定旁'便。例如，當氮化物層的厚度增加，氮化物層中 的瑕疵也跟著增加，且均勻饯^儀。另一方,，氮化物層 減薄後，在後績製程皮盘理的氮H也變少。有一 必須注意，以上說明雖是以氮化物為例，但並㈣ 物，無論光洱層(f方爰何種成分，本發明均一體適用。 還有一點也須注意，光學輔助層16的功i是抵遵」电阻 層與基材_洗學干擾。而非像前所述之抗反射塗層是吸 -6- .(諸先聞讀背面之注$項再填寫本頁)Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs A7 ---------______; _ B7 V. Description of the invention (4) Thickness 20α. After the optical auxiliary layer J6 is deposited, the optical auxiliary layer is not formed on the optical auxiliary layer. As shown in FIG. 3, the photoresist layer is engraved to form a IA pattern, and 24 °. Because of the presence of the optical auxiliary layer 16, the bottom of the pattern in Qin Zhuanghuang Case 2 no longer appears "foot". The photoresist calendar 22 and the substrate 10 _ Xueli interference is reduced due to the optical auxiliary layer 16, and the “foot” is also eliminated. Then, the photoresist pattern 2 is used to engrav the photomask _ layer 14 And 12 to form a hard mask 26, as shown in Figure 4. As the foot no longer appears, the result is that the hard mask is improved, its sidewalls are steep, and its pattern and light follow the case: 2 | The pattern on the head is exactly the same. After the hard mask 26 is formed, the photoresist table 2 is removed. If necessary, the optical auxiliary layer can be removed at this time. However, the layer 16 can also be left until the next step Reprocessing in stages. Next, a groove is formed on the substrate 10. Then, the groove is filled with a conventional material to form an insulating groove. The thickness of the optical auxiliary layer] 6 and the layers below it (in this example, layer 12) , M) thickness is closely related to praying wheat. In this example, the layer ⑭ is made of nitride. 'In fact, the thickness of the (nitride layer) can be adjusted. The optical auxiliary layer is not necessarily required. However, adjusting the object layer to an appropriate thickness is not necessarily convenient. For example, when the thickness of the nitride layer is increased, the defects in the nitride layer are also increased and uniformly prepared. On the other hand, after the nitride layer is thinned, the nitrogen H that is processed in the later production process also becomes less. It must be noted that although the above description is based on nitride, it is not a compound, regardless of the photoluminescent layer (f The present invention is applicable as a whole to any composition. It is also important to note that the work i of the optical auxiliary layer 16 is resistant to the interference of the resistance layer and the substrate. It is not an anti-reflective coating as described above. The layer is sucked -6-. (Zhu Xianwen read the note on the back before filling in this page)
本紙張^^適用中國圓家標準（€阳）八4^^(210乂297公楚） 38^107 五、發明説明（5 ) 收孩及底之千擾。立摩輔助層16是調整從光阻曝光接觸 基材的_。蜱必然影響基故数先阻層間的干擾，圖 案的結果。 ' 圖5A-D顯示光學—辅助層的厚度故變^產生致緩果 。覆蓋於氰化物墊上之氮化物層的厚度為〇〇决矣,光學輔 助屬^材粹使用TEOS。圖从顯示光學轤助雇丛^厚度 為?OOP埃，苎有熒現光吗別"足部、圖诏顯示光學輔助層 16枚展度爲225^1埃，開始有一點"足部”形成。圖5(：顯示光 學輔助層16的厚度為2500埃，可以很清楚看到光阻的" 部”。圖5D顯示光學輔助層16的厚度為2乃9埃，它的，，足 部”更為明顯。 就以上的例子而言，雖然以2〇〇〇埃的屡度^^崔，但 對其2厚度的I化愈及其它成分峨學鋪而言，並 不一定能獲得最佳結果。在使里先學捕逝廉時.H厚度 必須配合當時的恃定條件士能獲致缓果。 ”本發明雖是利用上述的具體實韻明，㈣^能將其 解釋為僅限於上述的例子。以上各具體實例的各種修改與 組合、，以及本發明的其它具體實例，很明顯都可供需要此 技術之人參考。因此，所附之申請專利利包括了任何此類 的修改或具體實例。 本紙張^麟财_緖^This paper ^^ applies the Chinese Yuanjia Standard (€ yang) 8 4 ^^ (210 乂 297 Gongchu) 38 ^ 107 V. Description of the Invention (5) Accepting children's troubles. The Limo auxiliary layer 16 is adjusted to contact the substrate from the photoresist exposure. Ticks will inevitably affect the interference between the layers and the result of the pattern. 'Figures 5A-D show that the thickness of the optical-auxiliary layer has changed ^ resulting in retarding effects. The thickness of the nitride layer overlying the cyanide pad is 0.000 Å. TEOS is used as the optical assistant. The figure shows that the thickness of the optical assistants is OOOP Angstroms, is there any fluorescent light? Don't say "foot," Figure 16 shows that the 16 optical auxiliary layers have a spread of 225 ^ 1 Angstroms, starting with a little "foot" "Formation. Figure 5 (: shows that the thickness of the optical auxiliary layer 16 is 2500 angstroms, and the " portion of the photoresist can be clearly seen". Figure 5D shows that the thickness of the optical auxiliary layer 16 is 2-9 angstroms. "Foot" is more obvious. As for the above example, although it is repeated ^^ Cui of 2000 Angstroms, it is not always possible for its 2 thickness thickness and other ingredients, E Xuepu. The best result is obtained. When making Lixian learn to lose money, the thickness of H must be matched with the prevailing conditions at the time to achieve a slow result. "Although the present invention uses the above specific practical charm, 上述 ^ can be interpreted as It is only limited to the above examples. Various modifications and combinations of the above specific examples, as well as other specific examples of the present invention, are obviously available for reference by those who need this technology. Therefore, the attached patent application includes any such Modifications or specific examples. This paper ^ 麟 财 _ 绪 ^