TW384408B - Liquid crystal displays and a manufacturing method thereof - Google Patents
Liquid crystal displays and a manufacturing method thereof Download PDFInfo
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- TW384408B TW384408B TW87107634A TW87107634A TW384408B TW 384408 B TW384408 B TW 384408B TW 87107634 A TW87107634 A TW 87107634A TW 87107634 A TW87107634 A TW 87107634A TW 384408 B TW384408 B TW 384408B
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- pixel
- liquid crystal
- storage capacitor
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- crystal display
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 101
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000003990 capacitor Substances 0.000 claims abstract description 140
- 238000003860 storage Methods 0.000 claims abstract description 107
- 238000000034 method Methods 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 21
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 17
- 238000006243 chemical reaction Methods 0.000 claims description 16
- 238000009413 insulation Methods 0.000 claims description 6
- 230000002079 cooperative effect Effects 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims 2
- 239000011159 matrix material Substances 0.000 claims 2
- 238000002360 preparation method Methods 0.000 claims 1
- 230000002950 deficient Effects 0.000 abstract description 6
- 230000003071 parasitic effect Effects 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 description 31
- 238000010586 diagram Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 8
- 238000002161 passivation Methods 0.000 description 7
- 230000005684 electric field Effects 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 238000004088 simulation Methods 0.000 description 5
- 235000015170 shellfish Nutrition 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000010977 jade Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- Liquid Crystal (AREA)
Abstract
Description
B7 B7B7 B7
五、發明説明( 發明背景 (a) 發明範蜂 本發明有關一種薄膜電晶體液晶顯示器,及其製造方法。 (b) 相關技藝描述 具有諸如薄膜電晶體之切換元件之主動陣列液晶領示器 係爲最廣泛使用之液晶顯示器〇該切換元件連通以自數據 線施加數據電壓於像元電容器,並斷開。所施加之電壓保 持一段時間’直至使用儲存電容器及液晶電容器連通切換 元件。 — 通常使用兩類儲存電容器。其一係先前之閘極型,其中 該错存電容器之參考電極係$接於先前閘極線。相反地, 共用電極類型使用連接於儲存電容器之參考電極之個別共 用電極線。 現在參照附圖詳細描述習用液晶顯示器之結構。 圖1係爲習用型薄膜電晶體液晶顯示器之等電 路圖。 如圖1所示’傳送掃描信號之閘極線GL跨越傳送顯示信 號之數據線DL。有—個薄膜電晶體TFT,其閘極連接於 ,極線GL,而源極連接於數據線DL。薄膜電晶體TFT之 汲極係連接於液晶電容器Clc之第一個接頭及儲存電容器V. Description of the invention (Background of the invention (a) Invention of the invention The present invention relates to a thin film transistor liquid crystal display and a method for manufacturing the same. (B) Description of related arts An active array liquid crystal display device having a switching element such as a thin film transistor It is the most widely used liquid crystal display. The switching element is connected to apply a data voltage from the data line to the pixel capacitor and is disconnected. The applied voltage is maintained for a period of time until the storage element and the liquid crystal capacitor are used to communicate with the switching element. — Normally used Two types of storage capacitors. One is the previous gate type, in which the reference electrode of the misplaced capacitor is connected to the previous gate line. Conversely, the common electrode type uses an individual common electrode line connected to the reference electrode of the storage capacitor. The structure of a conventional liquid crystal display will now be described in detail with reference to the drawings. Fig. 1 is a circuit diagram of a conventional thin film transistor liquid crystal display and the like. As shown in Fig. 1, a gate line GL for transmitting a scanning signal spans a data line DL for transmitting a display signal. There is a thin film transistor TFT whose gate is connected to the pole line GL and the source Connected to the data line DL. The drain of the thin film transistor TFT is connected to the first connector of the liquid crystal capacitor Clc and the storage capacitor.
Cst之第一個接頭《液晶電容备Clc及儲存電容器cst係並 聯。於液晶電容器CLC之第二個接頭施加共用電壓vcom, 而儲存電容器Cst之第二個接頭係連接於與閘極線G]L隔離 之儲存線SL。 4- 本紙張尺^㈣财料 經濟部中央標準局貝工消费合作社印製 Α7 Β7 五、發明説明(2 ) 然而,薄¥_電晶IL液晶海示器具有因缠 邊銕轧比锋小士閂邢〇 圖2係爲習用先前閘極型薄膜電晶體液晶顯示器之等電 路圏》 於習用先前閘極型薄膜電晶體液晶顯示器中,如囷2所 不,該先前閘極器Cst.之參考電極 。其他結構與圖1所示之結構相同。此種結構亦具有雖然 農生生襄甚丑复择H,但承於閘極線之寄生電容仍高 題。 : —‘ 而且’當個別错存線或先前閉極線連接於错存電容器之 參考電極時,施加於儲存電篆器之兩個接頭之電壓相當高 ’介於ό伏特-12伏特之範圍内β因此,於介於間之 絕緣層中漏流,造成自身放電及/或破壞該絕緣層。 發明簡述 如前文所述’本發明之目的係形成—種供液晶類示器使 用之儲存電容器,而玉損墟_該#,孔比,亦不増加線路數目。 本發明另一個目的係改善液晶顯示器之顯示特性。 根據本發明,此等目的、特色及優點係藉著形成一種傲 巧電容器而達成’該儲存電容器之第一個接頭連接於像元 之切換元件’而第二個接頭係連接於相鄰像元之像元電極 。該液晶顯示器點狀反相驅 < 型式。 根據本發明,此等目的、特色及優點亦可藉著於基板上 形成一種儲存電容器,並形成經由閘極絕緣層與儲存電容 器重疊之汲極而達成。該汲極係經由位於閘極絕緣層中之 __ -S- 本紙張尺度刺巾㈣家鱗(CNS ) Α4規格(21GX297公釐) ~ --- .— : I-:---------1Τ------ο —— (請先聞讀t'面之注t·事項再填寫本頁) B7 五、發明説明(3 ) 接觸孔而連接於相鄰儲存電容器電極。 可於基板上形成多個直線共用電極,亦可於閉極絕緣層 上形成與共用電接間隔之多條直線像元電極。該没極係連 接於像元電極。 根據本發明,前述液晶顯示器可藉著以下方法達成,其 係於基板上形成閘極線、閉極、共用電桎及儲存電容器, 於該閘極線、閘極、共用電極及儲存電容器上形成閘極絕 緣層,依序於位於閘極上之閘極絕緣層上形成非晶矽層及 摻雜之非晶矽層,於閘極絕緣漘中形成曝露儲存電容器電 極部分之接觸孔,及形成源極、汲極、像元電極及數據線 ,使該汲極經由位於該閘極g緣層中之接觸孔電聯於相鄱 儲存電容器電極。 可於形成閘極線、閘極、共用電極及儲存電容器之步驟 中形成共用信號線,可於該源極及汲極、像元電極及數據 線上形成鈍化層。 根據本發明,可於像元陣列之兩端形成不用於顯示之摸 擬像元。因此,每個用於顯示之像元皆可具有兩個餘存電 容器,連接於像元之切換元件。 經濟部中央標準局員工消費合作社印繁 /若儲存電容器之兩接頭中之一浮動,則浮動之接頭可連 ^於先前閘極線。 附圖_簡述 囷1係爲習用共用電極型薄膜電晶體液晶顯示器之等電 路圖。 圖2係爲習用先前閘極型薄膜電晶體液晶顯示器之等電The first connector of Cst, the liquid crystal capacitor Clc and the storage capacitor cst, are connected in parallel. A common voltage vcom is applied to the second terminal of the liquid crystal capacitor CLC, and the second terminal of the storage capacitor Cst is connected to the storage line SL isolated from the gate line G] L. 4- This paper ruler ^ Printed by the Central Standards Bureau of the Ministry of Economic Affairs and printed by the Shellfish Consumer Cooperative A7 Β7 V. Description of the invention (2) However, the thin ¥ _electric crystal IL liquid crystal display has a smaller edge than the front edge due to entanglement Figure 2 is a circuit of a conventional gate-type thin-film transistor liquid crystal display. In the conventional gate-type thin-film transistor liquid crystal display, as shown in Figure 2, the previous gate Cst. Reference electrode. The other structures are the same as those shown in FIG. 1. This structure also has the problem of parasitic capacitance on the gate line, although it is very ugly to choose H. : — 'And' When the individual stray line or the previous closed pole line is connected to the reference electrode of the stray capacitor, the voltage applied to the two terminals of the storage capacitor is quite high 'within the range of -12 volts. β, therefore, leaks in the intervening insulating layer, causing self-discharge and / or damaging the insulating layer. Brief description of the invention As described above, the object of the present invention is to form a storage capacitor for a liquid crystal display device, and the jade loss market, the #, the hole ratio, and the number of lines are not increased. Another object of the present invention is to improve the display characteristics of a liquid crystal display. According to the present invention, these objects, features, and advantages are achieved by forming a type of proud capacitor "the first connector of the storage capacitor is connected to the switching element of the pixel" and the second connector is connected to the adjacent pixel Pixel electrode. The LCD dot-inversion driver < type. According to the present invention, these objects, features, and advantages can also be achieved by forming a storage capacitor on a substrate and forming a drain electrode overlapping the storage capacitor via a gate insulating layer. The drain electrode is located in the gate insulating layer through __ -S- This paper-scale stab scarf (CNS) A4 size (21GX297 mm) ~ --- .-: I-: ----- ---- 1Τ ------ ο —— (Please read the note t and notes on t 'face before filling out this page) B7 V. Description of the invention (3) Contact hole to connect to the adjacent storage capacitor electrode . Multiple linear common electrodes can be formed on the substrate, or multiple linear pixel electrodes spaced from the common electrical connection can be formed on the closed-pole insulating layer. The electrode system is connected to the pixel electrode. According to the present invention, the foregoing liquid crystal display can be achieved by forming a gate line, a closed electrode, a common electrode, and a storage capacitor on a substrate, and forming the gate line, the gate, a common electrode, and a storage capacitor on the substrate. The gate insulation layer sequentially forms an amorphous silicon layer and a doped amorphous silicon layer on the gate insulation layer located on the gate, forms a contact hole in the gate insulation layer, which exposes the electrode portion of the storage capacitor, and forms a source Electrode, drain electrode, pixel electrode and data line, so that the drain electrode is electrically connected to the related storage capacitor electrode through a contact hole located in the gate edge layer. A common signal line can be formed in the steps of forming the gate line, the gate, the common electrode, and the storage capacitor, and a passivation layer can be formed on the source and drain electrodes, the pixel electrode, and the data line. According to the present invention, analog pixels which are not used for display can be formed at both ends of the pixel array. Therefore, each pixel used for display can have two remaining capacitors connected to the switching element of the pixel. Printed by the Consumers Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs / If one of the two terminals of the storage capacitor is floating, the floating terminal can be connected to the previous gate line. Figure_Brief description 囷 1 is a circuit diagram of a conventional common electrode thin film liquid crystal display. Figure 2 shows the isoelectricity of a conventional gate-type thin-film transistor liquid crystal display.
I A7 ____- —__[_B7__ 五、發明説明(4 ) ~~ ^ 路圖。 圖3係爲本發明第一個具體實例之薄膜電晶體液晶類示 器之等電路圖。 圈4係爲修補圖3所示之液晶顯示器中缺陷像元之方法。 圖5係爲本發明第二個具體實例之薄膜電晶體液晶顯示 器之等電路囷》 圖6係爲修補圖5所示之液晶顯示器中缺陷像元之方法。 圖7係爲本發明第三個具體實例之薄膜電晶體液晶顯示 器之等電路囷。 一 囷8説明本發明第四個具體實例之液晶顯示器之配置圖。 圖9係爲圖8所示之液晶顯示器沿線ιχ-ΐχ'所得之剖面 圖。 阖10-12.係爲本發.明.第四個具體實例之液晶顯示器之電 壓保持能力之模擬圖》 圖13係爲顯示本發明第四個具禮實例之液-品肩_.示器之 反衝電壓的囷。 圖14係爲顯示本發明第四個具趙實例之液晶顯示器之 缺陷像元的像元電塾之圖。 圖15係爲本發明第五個具體實例之液晶顯示器ϋ置 圖。 圖16係爲圖15所示之液晶顯示器沿線关斯得之 ..剖面圖-。 \ 囷17-20係爲説明本發明第五個具玆實例液晶顯示器 之製法的杳心面圖。 本纸張尺度適用中國囷家標準(CNS ) A4規格(2丨〇><297公釐 ;I-;· of- c請先聞讀背面之注ri項再填寫本頁) 訂 經濟部中央標準局負工消費合作社印製 A7 B7 五、發明説明(5 ) 圖21係爲本發明第六個具體實例之液晶顯示器之配置 囷。 .圖22-24個別爲本發明第七個至第九假具體實例之薄膜 電晶趙液晶顯示器之等電路圖。 較佳具體會例詳述 以下參照附圓更詳細地描述本發明,其中列示本奋明較 佳具禮實例。然而,本發明可具體實現爲不同形式,而不 限於此處所述之具體實例。此等具體實例僅用以更完整而 充分地描述本發明,而使本發碉之範園充分地傳達於熟習 此技藝者。囷中’故意誇大料層及區域之厚度,以使描述 較爲精簡。 圖3係爲本發明第一個具體實例之薄膜電晶體液晶顯示 器之等電路圖。圖4係爲修補圖3所示之液晶顯示器中缺 陷像元之方法。 如囷3所示,閘極線GL橫向延伸,而數據線DL综向延 伸。每個像元皆具連接有液晶電容器CLC及薄膜電晶體。 薄膜電晶體Q之閘極接頭係連接於閘極線GL,而源極及 汲極接頭個別連接於數據線DL及液晶電容器CLC之一接 頭。存有許多儲存電容器,每一個之第一個接頭皆連接於 列狀像元之薄膜電晶體的汲極接頭,而第二個接頭則連接 於同列相鄰像元之薄膜電晶體^的汲極接頭。同列像元係連 接於相同閘極線。稱爲共用電壓Vcom之電恩施加於液晶 電容器CLC之另一接頭。 左侧儲存電容器CstL兩個接頭中連接於最左側像元之薄 -8 - 本纸張尺度適用中國國家梂準(CNS ) A4規格(2]0X297公釐) 丨 l·—!—^ ο裝 —I (請先聞TI-背面之_注會事項再填寫本頁) 訂 裡濟部中央棣率局員工消費合作社印掣 五、發明説明(6 ) 膜電晶體的汲極者係爲浮動,而最右側像元不具儲存電容 =β結果,除最右側像元外之每個像元皆具有兩個儲存電 谷器,而最右側像元具有一個错存電容器。 於圓3所示之液晶顯示器中,當切換元件諸如薄膜電晶 體失效時,失放之薄膜電晶體Q〇之汲極可藉著使用激光等 方式裁切圖4中之I區而與液晶電容器及儲存電容器分隔 此'情況下,數據信號未施加於像元之液晶電容器。根據 電荷轉移規則,像元之液晶電容器的像元電壓Vp可由下式 決定 — VP = (VL+VR+CLCXCst)/(2+CLC/Cst) 其中VL係爲左侧像元之像元電壓,Vr係爲右側像元之 像疋電壓,.cLC係爲像元之液晶電容器之電容,而Cst係爲 像元之错存電容器之電容a CLC/Cst小於1,而cLC/Cst隨 Cst之増加而降低,故像元電壓接近左側及右側像元電壓之 算數平均値。因此,像元之照度接近左側及右側像元照度 之算數平均値’自動補償像元缺陷。 ,‘,經濟部中央標準局員工消费合作社印製 因爲除物件邊界外,影像亮度皆緩緩變化,此係像元缺 良好冗餘結構,尤其是單色顯示。就彩色顯示而言, 错存電容器可連接於第三個鄰接像元,即顯示與缺陷像元 相同之色彩之像元’以達到自—身冗餘率之目的。然而,若 不需要自身冗餘率,則可使相鄰像元彼此連接。 圖5係爲本發明第二個具體實例之薄膜電晶體液晶顯示 器之等電路圖’其中,該儲存電容器Cst之兩接頭之—係 ___ -9- ——— 本紙張尺度ϋ财關家料(CNS) A4_ (2獻297公 A7 B7 經濟部中央標準局貝工消费合作社印製 五、發明説明( 連接於同行之相鄰像元之汲極。圖6顯示修補圖6所示之 液晶顯示器中缺陷像元之方法》 如圖5所示,閘極線GL係排列於橫向,而數據線DL係 排列於縱向。薄膜電晶體Q之閘極接頭係連接於閘極線GL ,源極及汲極係個別連接於數據線DL及液晶電容器CLC 。第一個接頭連接於薄膜電晶體Q之汲極接頭之儲存電容 器的第二個接頭係連接於同行相鄰像元之汲極接頭,即源 極接頭連接於相同數據線DL之相鄰像元。於液晶電容器 Clc之另一接頭上施加稱爲共舟電歷_ Vcom之固定電壓。 如第一個具體實例所示,當薄膜電晶體失效時,失效之 薄膜電晶體Qo汲極接頭可i用激光等方式與儲存電容器 分隔’如囷6之II區所示。具有失效薄膜電晶體之像元的 像元電恩係由上限及下限電壓之算數平均値決定。因此, 可自動補償像元之照度。此情沉下,若相一行之像元顯示 相同顏色,則即使是彩色顯示,亦具有冗餘結構。 該儲存電容器之兩接頭中之—可連接於左、右、上及下 側相鄰像7L。圖7係爲本發明第三個具體實例之薄膜電晶 想液晶顯示器之等電路圖。 /如圖7所示,儲存電容器Cst之兩接頭中之一連接於像 元之薄膜電晶體Q汲極,而另一接頭則連接於左或右侧像 元及上或下側像元之薄膜電晶體Q汲極接頭。 現在,更詳細地描述具有前述儲存電容器之液晶顯示器 的結構。 圖8説明本發明第四個具體實例之液晶顯示器之配置圖 ..^ ! (請先W讀势面之注t-Ϋ項再填寫本頁) 訂 .0.I A7 ____- —__ [_ B7__ 5. Explanation of the invention (4) ~~ ^ Road map. Fig. 3 is a circuit diagram of a thin film transistor liquid crystal display of the first embodiment of the present invention. Circle 4 is a method for repairing defective pixels in the liquid crystal display shown in FIG. 3. Fig. 5 is a circuit diagram of a thin film transistor liquid crystal display according to a second embodiment of the present invention. Fig. 6 is a method for repairing defective pixels in the liquid crystal display shown in Fig. 5. Fig. 7 is a circuit diagram of a thin film transistor liquid crystal display according to a third embodiment of the present invention. Fig. 8 illustrates a configuration diagram of a liquid crystal display device according to a fourth embodiment of the present invention. FIG. 9 is a cross-sectional view of the liquid crystal display shown in FIG. 8 taken along line χ-χχ '.阖 10-12. This is a simulation diagram of the voltage holding ability of the liquid crystal display of the fourth specific example of the present invention. Figure 13 is a liquid-pin shoulder display indicator showing the fourth courtesy example of the present invention.反 of kickback voltage. Fig. 14 is a diagram showing pixel voltages of defective pixels of a fourth liquid crystal display device with an example of the present invention. Fig. 15 is an arrangement of a liquid crystal display device according to a fifth embodiment of the present invention. FIG. 16 is a cross-sectional view of the liquid crystal display shown in FIG. 15. \ 囷 17-20 is a heart-shaped diagram illustrating the manufacturing method of the fifth example liquid crystal display of the present invention. This paper size is in accordance with Chinese Standard (CNS) A4 specification (2 丨 〇 < 297 mm; I-; · of- c Please read the note ri on the back before filling this page) Order Ministry of Economic Affairs Printed by the Central Bureau of Standards Consumer Cooperatives A7 B7 V. Description of the Invention (5) Figure 21 shows the configuration of the liquid crystal display of the sixth specific example of the present invention. Figures 22-24 are circuit diagrams of the thin film transistor Zhao liquid crystal display of the seventh to ninth pseudo specific examples of the present invention. DETAILED DESCRIPTION OF THE PREFERRED SPECIFIC CONFERENCE EXAMPLES The present invention will be described in more detail with reference to the appended circle, in which a better example of Fenmin is listed. However, the present invention may be embodied in different forms without being limited to the specific examples described herein. These specific examples are only used to describe the present invention more completely and fully, so that the model garden of the present invention is fully conveyed to those skilled in the art. Langzhong ’intentionally exaggerates the thickness of the material layer and area to make the description more concise. Fig. 3 is a circuit diagram of a thin film transistor liquid crystal display device according to a first embodiment of the present invention. FIG. 4 is a method for repairing the missing pixels in the liquid crystal display shown in FIG. 3. FIG. As shown in 囷 3, the gate line GL extends laterally, and the data line DL extends in a meridional direction. Each pixel is connected to a liquid crystal capacitor CLC and a thin film transistor. The gate terminal of the thin film transistor Q is connected to the gate line GL, and the source and drain terminals are individually connected to one of the data line DL and one terminal of the liquid crystal capacitor CLC. There are many storage capacitors. The first connector of each is connected to the drain terminal of a thin film transistor in a row of pixels, and the second terminal is connected to the drain of a thin film transistor in an adjacent pixel in the same row ^ Connector. The pixels in the same row are connected to the same gate line. A voltage called a common voltage Vcom is applied to the other terminal of the liquid crystal capacitor CLC. The left of the two capacitors of the storage capacitor CstL is connected to the left-most pixel thin -8-This paper size is applicable to China National Standard (CNS) A4 specifications (2) 0X297 mm 丨 l · —! — ^ Ο installed —I (please first listen to the TI-back _notes and fill in this page before filling in this page) Ordering the stamp of the staff consumer cooperative of the Central Government Bureau of the Ministry of Economic Affairs V. Description of the invention (6) The drain of the membrane transistor is floating, The right-most pixel does not have a storage capacitor = β. Each pixel except the right-most pixel has two storage valleyrs, and the right-most pixel has a stray capacitor. In the liquid crystal display shown in circle 3, when a switching element such as a thin film transistor fails, the drain of the discharged thin film transistor Q0 can be cut with the liquid crystal capacitor by cutting the area I in FIG. 4 by using a laser or the like. In this case, the data capacitor is not applied to the pixel's liquid crystal capacitor. According to the charge transfer rule, the pixel voltage Vp of the liquid crystal capacitor of a pixel can be determined by the following formula — VP = (VL + VR + CLCXCst) / (2 + CLC / Cst) where VL is the pixel voltage of the left pixel, Vr is the image voltage of the right pixel, .cLC is the capacitance of the liquid crystal capacitor of the pixel, and Cst is the capacitance of the stray capacitor of the pixel a CLC / Cst is less than 1, and cLC / Cst increases with the increase of Cst However, the pixel voltage is close to the arithmetic mean of the left and right pixel voltages. Therefore, the illuminance of the pixel is close to the arithmetic mean of the illuminance of the left and right pixels, and the pixel defects are automatically compensated. , ’, Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs because the image brightness changes slowly except for the object boundary. This pixel lacks a good redundant structure, especially for monochrome display. As far as color display is concerned, the staggered capacitor can be connected to a third adjacent pixel, that is, a pixel that displays the same color as the defective pixel, to achieve the purpose of self-redundancy. However, if you do not need your own redundancy ratio, you can connect adjacent cells to each other. Fig. 5 is a circuit diagram of a thin film transistor liquid crystal display according to a second specific example of the present invention, wherein the two terminals of the storage capacitor Cst are-___ -9- --- this paper size ϋ 财 关 家 料 ( CNS) A4_ (2 offers 297 males A7 B7 Printed by the Bayer Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (connected to the drain of adjacent pixels in the same industry. Figure 6 shows the repair of the liquid crystal display shown in Figure 6 Method of Defective Pixels "As shown in Figure 5, the gate line GL is arranged in the horizontal direction, and the data line DL is arranged in the vertical direction. The gate connector of the thin film transistor Q is connected to the gate line GL, the source and the drain. The poles are individually connected to the data line DL and the liquid crystal capacitor CLC. The first connector is connected to the drain capacitor of the thin film transistor Q. The second connector is connected to the drain connector of the adjacent adjacent pixel, that is, the source. The pole connector is connected to adjacent pixels of the same data line DL. A fixed voltage called common boat electric calendar _ Vcom is applied to the other connector of the liquid crystal capacitor Clc. As shown in the first specific example, when the thin film transistor fails Qo The drain terminal can be separated from the storage capacitor by means of laser or the like, as shown in zone II of Figure 6. The pixel value of a pixel with a failed thin-film transistor is determined by the arithmetic mean of the upper and lower voltages. Therefore, Can automatically compensate the illuminance of the pixel. In this case, if the pixels in the same row display the same color, even the color display has a redundant structure. One of the two connectors of the storage capacitor can be connected to the left and right. The upper and lower adjacent images are 7L. Fig. 7 is a circuit diagram of a thin film transistor liquid crystal display according to a third embodiment of the present invention. / As shown in Fig. 7, one of the two terminals of the storage capacitor Cst is connected to The thin film transistor Q-drain of the pixel, and the other connector is connected to the left or right pixel and the thin-film transistor Q-drain connector of the upper or lower pixel. Now, a more detailed description of The structure of the liquid crystal display. Figure 8 illustrates the configuration of the liquid crystal display of the fourth specific example of the present invention .. ^ (please read the note t-Ϋ of the potential surface before filling out this page) Order. 0.
經濟部中央標準局負工消費合作社印製 。圖9係爲圈8所示之液晶顯示器沿Ιχ_Ιχ,線所得之剖面囷。 如圖8及9所示,於透明絕緣基板1〇〇上形成橫向閘極 線10,亦於基板100上形成閘極線1〇分支之閘極u。於 基板100上形成縱向之儲存電容器電極21及22 β閘極線 20及儲存電容器電極21及22係彼此分隔。 於閘極線10、閘極il及儲存電容器電極21及22上形成 由氮化矽所製造之閘極絕緣層3 0。 於閘極絕緣層30位於閘極Η上之部分上形成由半導體 諸如非晶珍所製造之通道層40、。於非晶矽層4〇上形成由 可降低通道層與線路間之接灰電阻之材料諸如高度接雜之 非to梦所製造之電阻接觸層51及52,而電阻接觸層相對 於閘極11分隔成兩部分i 於電阻接觸層51及52之各部分形成源極61及汲極62 。該源極61係連接於數據線60,其係於閘極絕緣層3〇上 縱向形成’並自外部傳送顯示信號。 於源極61、汲極62及數據線60上形成由氮化矽等物所 製造之鈍化層70。該鈍化層70具有曝露出汲極62部分之 ,觸孔71,該鈍化層70及閘極絕緣層3〇具有曝露出儲存 電容器電極21部分之接觸孔72。像元電極8〇、81及82 係於鈍化層70上由閘極線1〇 ^數據線6〇之交點所界定之 像元區中形成。像元電極80係經由接觸孔71連接於没極 62。像元電極82與儲存電容器電極22重疊以形成儲存電 容器,並經由接觸孔72連接於相鄰像元之儲存電容器電極 (請先閱讀背面之注*事項再填寫本\β〇 0裝· 訂 jo .1 I 11 ·Printed by the Consumer Standards Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. FIG. 9 is a cross section 囷 of the liquid crystal display shown in circle 8 taken along the line IX_IX. As shown in FIGS. 8 and 9, a lateral gate line 10 is formed on a transparent insulating substrate 100, and a gate u on which the gate line 10 branches is also formed on the substrate 100. The storage capacitor electrodes 21 and 22 in the vertical direction are formed on the substrate 100, and the β gate lines 20 and the storage capacitor electrodes 21 and 22 are separated from each other. A gate insulating layer 30 made of silicon nitride is formed on the gate line 10, the gate electrode il, and the storage capacitor electrodes 21 and 22. A channel layer 40 'made of a semiconductor such as amorphous silicon is formed on a portion of the gate insulating layer 30 located on the gate electrode Η. On the amorphous silicon layer 40, resistive contact layers 51 and 52 made of a material that can reduce the gray resistance between the channel layer and the wiring, such as highly doped non-dream, are formed, and the resistive contact layer is opposite to the gate 11 The source electrode 61 and the drain electrode 62 are formed at two portions of the resistive contact layers 51 and 52 divided into two portions i. The source electrode 61 is connected to the data line 60, which is formed vertically on the gate insulating layer 30 and transmits a display signal from the outside. A passivation layer 70 made of silicon nitride or the like is formed on the source 61, the drain 62, and the data line 60. The passivation layer 70 has a contact hole 71 exposing a portion of the drain electrode 62, and the passivation layer 70 and the gate insulating layer 30 have a contact hole 72 exposing a portion of the storage capacitor electrode 21. The pixel electrodes 80, 81, and 82 are formed on the passivation layer 70 in a pixel region defined by the intersection of the gate line 10 and the data line 60. The pixel electrode 80 is connected to the electrode 62 via a contact hole 71. The pixel electrode 82 overlaps with the storage capacitor electrode 22 to form a storage capacitor, and is connected to the storage capacitor electrode of an adjacent pixel via a contact hole 72 (please read the notes on the back before filling in this \ β〇0 装 · jo .1 I 11 ·
經濟部中央標準局貝工消费合作社印製 A7 --_ 五、發明説明(9 ) 21 〇 現在説明前述液晶顯示器之操作。 首先,於像元之閘極11上施加閘極連通電壓,以經由閘 核線10顯示信號,而使薄膜電晶體連通。經由數據線60 於源極61上施加表示顯示信號之數據電壓,該數據電壓經 由薄膜電晶體通道傳送至汲極62。該數據電壓係傳送至像 元電極82,兩基板間因像元電極82與位於相對基板上之 參考電極間之電壓差而產生電場。電場量藉數據電壓之大 +控制,液晶分子由電場再排列,而控制透光量。 另一方面’該電場之方向需定期改變,以防止液晶材料 損壞》即,數據電壓相對於f考電壓之極性需定期改變。 前述方法稱爲轉換驅動法。轉換驅動法有許多類型,例 如圖框轉換、線路轉換、點式轉換及行式轉換等。 囷框轉換驅動法係爲像元電壓相對於參考電屡之極性以 圏框爲單元而改變。若爲線路轉換驅動法,則像元電壓相 對於參考電壓之極性以閘極線爲單元而改變,若爲點式轉 換驅動法,則像元電壓相對於參考電壓之極性以像元爲單 元而改變。 ,於一個閉極線選擇時間期間,所有像元皆個別充電至所 施加之數據電壓。之後於保持期間,於寫入後續數據電壓 之前,保持該像元電壓。根據本發明具體實例,每個像元 電壓相對於相鄰错存電容器皆係爲參考電壓。若爲線路或 圖框轉換法,則相鄰像元於顯示全白或全黑時具有相同電 壓因此’错存電容器之兩電極間之電壓差可忽略。較小 本紙張纽糾悄Printed by the Shell Standard Consumer Cooperative of the Central Bureau of Standards, Ministry of Economic Affairs A7 --- 5. Description of Invention (9) 21 〇 Now, the operation of the aforementioned liquid crystal display will be described. First, a gate connection voltage is applied to the gate electrode 11 of the picture element to display a signal via the gate core line 10 to communicate the thin film transistor. A data voltage representing a display signal is applied to the source 61 via the data line 60, and the data voltage is transmitted to the drain 62 through the thin film transistor channel. The data voltage is transmitted to the pixel electrode 82, and an electric field is generated between the two substrates due to a voltage difference between the pixel electrode 82 and a reference electrode located on the opposite substrate. The amount of electric field is controlled by the large + of the data voltage, and the liquid crystal molecules are rearranged by the electric field to control the amount of light transmission. On the other hand, the direction of the electric field needs to be changed periodically to prevent the liquid crystal material from being damaged. That is, the polarity of the data voltage with respect to the f test voltage must be changed periodically. The aforementioned method is called a conversion-driven method. There are many types of conversion-driven methods, such as frame conversion, line conversion, point conversion, and line conversion. The frame switching driving method is to change the pixel voltage with respect to the reference voltage repeatedly using the frame as a unit. If it is a line conversion driving method, the polarity of the pixel voltage relative to the reference voltage is changed by using the gate line as a unit. If it is a point conversion driving method, the polarity of the pixel voltage relative to the reference voltage is based on the pixel as a unit. change. During a closed pole selection time, all pixels are individually charged to the applied data voltage. During the hold period, the pixel voltage is held until the subsequent data voltage is written. According to a specific example of the present invention, each pixel voltage is a reference voltage with respect to an adjacent stray capacitor. If it is a line or frame conversion method, adjacent pixels have the same voltage when they are displayed completely white or completely black, so the voltage difference between the two electrodes of the 'storage capacitor can be ignored. Smaller paper
;; Qt—— • * (請先閲讀t-面之注^K項再填寫本頁} 訂 _ 12 A7 B7 經濟部中央標準局貝工消费合作社印製 五、發明説明(1〇 ) 之電壓差使電容器介電質之漏流較低》亦增加電容器介電 質之可撓性,使顯示面板具有較長之壽命。 模擬該儲存電容器對本發明第四個具體實例之液晶顯示 器之像元漏流之電壓保持能力,結果記錄於囷10-12 »以 3*9像元陣列進行模擬,視需要改變液晶電阻rlc。 若爲線路轉換法,則相鄰像元電壓相對於上層共用電極 具有相同極性。相反地,若爲點式轉換法,則相鄰像元電 壓具有相反極性》該模擬期間,上層共用電壓保持5伏特》 就第二條水平線之第五個像·元而言,模擬像元電壓係列 示於囷10。粗線表示本發明第四個具體實例,而虚線表示 習用共用電極結構之情況。“線表示無儲存結構之情況, 而因該線與粗線重疊而未出示。窝入時間内,相對於一水 平線之所有數據電壓皆爲10伏特(線路轉換法)。此項模擬 中之液晶電阻係爲1 * 1011歐姆。 如圖10所示,像元電整因大量漏流而迅速降低。像元電 壓與習用共用電極結構及無儲存電容器結構比較。;; Qt—— • * (Please read the note of t-face ^ K before filling out this page} Order_ 12 A7 B7 Printed by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs V. The voltage of the invention description (1〇) Poor capacitor capacitor leakage current is lower "also increases the flexibility of the capacitor dielectric, so that the display panel has a longer life. Simulate the storage capacitor to the pixel leakage of the liquid crystal display of the fourth embodiment of the present invention The voltage holding ability is recorded in 囷 10-12. »Simulation with 3 * 9 pixel array, if necessary, change the liquid crystal resistance rlc. If it is a line conversion method, the voltages of adjacent pixels have the same polarity relative to the upper common electrode Conversely, if it is a point conversion method, the voltages of adjacent pixels have opposite polarities "During the simulation, the upper common voltage is maintained at 5 volts" For the fifth pixel of the second horizontal line, the analog pixel The voltage series is shown in 囷 10. The thick line indicates the fourth specific example of the present invention, and the dashed line indicates the case of the conventional common electrode structure. "The line indicates the case where there is no storage structure, and this line is not shown because it overlaps with the thick line. nest Within a period of time, all data voltages relative to a horizontal line are 10 volts (line conversion method). The liquid crystal resistance in this simulation is 1 * 1011 ohms. As shown in Fig. 10, the pixel cell level is caused by a large amount of leakage current. Quickly decrease. The pixel voltage is compared with the common electrode structure and the structure without storage capacitor.
習用共用電極液晶顯示器之像元電壓可部分藉儲存電容 器保持,故該像元電麼並未如此迅速地降低。本發明第四 個具體實例之液晶顯示器或無儲存電容器結構液晶顯示器 中之像元電壓降低較爲迅速β該像元電壓之迅速降低係因 具有相同量之漏流而使相鄰像元電壓同時產生像元電壓降 低。 V 若僅有特定像元漏流高於其他像元,則模擬產生不同之 結果’如圖11所示。此情況下之液晶電阻係爲5 * 1 〇 10歐 -13- 本紙張尺度通用中國國家標準(.CNS ) Α4規格(2)〇Χ^7公釐〉 ' (請先Mi背面之注^'項再填寫本頁)The pixel voltage of a conventional common-electrode liquid crystal display can be partially held by a storage capacitor, so that the pixel power does not decrease so quickly. In the fourth embodiment of the present invention, the pixel voltage in the liquid crystal display or the liquid crystal display without a storage capacitor structure decreases rapidly. The rapid decrease in the pixel voltage is caused by the same amount of leakage current, which makes the voltages of adjacent pixels simultaneously. Generates a decrease in pixel voltage. V If only certain pixels leak more than other pixels, the simulation will produce different results' as shown in Figure 11. The liquid crystal resistance in this case is 5 * 1 〇10 EURO-13- This paper size is generally Chinese National Standard (.CNS) A4 specifications (2) 〇 × ^ 7 mm> '(Please note on the back of Mi ^^' (Please fill this page again)
經濟部中央標準局貝工消费合作社印製 A7 _________~B7 五、發明説明(11 ) 姆〇 即使本發明第四個具體實例之像元結構之像元電壓較習 用共用電極結構更迅速地降低,像元電壓仍較無儲存電容 器像元降低得更慢。 ♦爲點式轉換法,相鄰像元電壓變化爲反向,則本發明 具嫌實例之液晶顯示器產生更有效之電壓保持能力,如圖 ^岬示。本發明具體實例之電壓保持能力最佳。於點式轉 换法中,奇數數據線電壓爲10伏特,偶數數據線電壓爲1 伏特’而液晶電阻係爲1 * l〇u歐姆。 囷13顯示像元電壓藉著電容耦合於閘極電壓降而致之 位準移動。本發明具體實例之較長充電時間係因儲存電容 器電極與點式轉換驅動法間之電壓差較大所致。 本發明具體實例之液晶顯示器的反衝電壓Vkb大於習用 共用電極型像元,而與無儲存電容器像元相同。反衝電壓 値較大係因相鄰像元藉著與閘極電壓降耦合而同時產生電 壓降。 就失效之像元而言,如圖4所示,像元電歷係由相鄰像 元電壓決定,如圖14所示。較高之曲線表示左侧及右侧之 卞元電壓,而較低之曲線係爲失效像元之像元電磨。 製造並測試具有本發明第四個具體實例之像元結構之液 晶顯示面板。該面板係爲全色彩5.8"對角及234 * 400(*3) 解析度。影像如習用共用電極結構般良好,而不會有串話 及閃爍之問題。 圖15説明本發明第五個具體實例之液晶顯示器之配置 -14- ^张尺度適用中關家標準(CNS ) A4祕(210X297公釐) :- (請先聞1**背面之ii*f項再填寫本頁)Printed by A7 _________ ~ B7 of the Central Standards Bureau of the Ministry of Economic Affairs, B7. V. INTRODUCTION OF THE INVENTION (11) Even if the pixel voltage of the pixel structure of the fourth specific example of the present invention is lower than that of the conventional common electrode structure, The cell voltage still drops more slowly than the pixels without storage capacitors. ♦ It is a dot conversion method, and the voltage changes of adjacent pixels are reversed, so the liquid crystal display of the suspected example of the present invention produces a more effective voltage holding capability, as shown in Figure ^. The specific example of the present invention has the best voltage holding capability. In the dot conversion method, the voltage of the odd data line is 10 volts, the voltage of the even data line is 1 volt ', and the liquid crystal resistance is 1 * 10u ohm. Figure 13 shows that the pixel voltage is shifted by the capacitive coupling to the gate voltage drop. The longer charging time of the specific embodiment of the present invention is due to the larger voltage difference between the storage capacitor electrode and the point conversion driving method. The kickback voltage Vkb of the liquid crystal display of the specific example of the present invention is larger than that of a conventional common electrode type pixel, and is the same as a pixel without a storage capacitor. The larger kickback voltage is due to the simultaneous voltage drop of adjacent pixels by coupling with the gate voltage drop. For failed pixels, as shown in Figure 4, the pixel calendar is determined by the voltage of adjacent pixels, as shown in Figure 14. The higher curve indicates the unit voltage on the left and the right, while the lower curve is the electric mill of the failed pixel. A liquid crystal display panel having a pixel structure according to a fourth embodiment of the present invention was manufactured and tested. The panel is full color 5.8 " diagonal and 234 * 400 (* 3) resolution. The image is as good as the conventional common electrode structure without the problems of cross talk and flicker. Fig. 15 illustrates the configuration of a liquid crystal display device according to the fifth embodiment of the present invention. -14- Dimensions are applicable to Zhongguanjia Standard (CNS) A4 secret (210X297 mm):-(please first listen to 1 ** on the back ii * f (Please fill this page again)
A7 B7 經 濟 部 中 央 標 準 局 Ά X. 消 合 作 社 印 製 五、發明説明(12 ) 。圏16係爲圖15所示之液晶顯示器沿χνΐ-χνί,線所得之 剖面囷。本發明第五個具體實例之液晶顯示器係藉著位於 基板上而彼此平行之直線像元電極及直線共用電極產生實 質平行於基板之電場,以控制液晶分子之移動。 如圖15及16所示,於透明絕緣基板1〇〇上形成橫向而 自外部傳送择描信號之閘極線20。於基板1〇〇上形成與閘 極線20平行之共用信號線90。閘極線20 —部分充作閘極 ,於基板100之像元區中形成多個彼此平行而連接於共用 信號線90之間隔共用電極。於意板ι〇〇上橫向形成儲存電 容器電極11及12,該儲存電容器電極i i及12同時與閘極 線20及共用線90分隔。 於閘極圖型線20、共用信號線90、共用電極91及错存 電容器電極11及12上形成由氮化矽等材料製造之閘極絕 -緣層30❶該閘極絕緣層具有個別曝露儲存電容器電極}】 及12部分之接觸孔31及32 » 於閘極絕緣層30位於閘極-閘極線20之一部分上之部 分上形成由半導體諸如非晶矽所製造之通道層4〇。於非晶 珍層40上形成電阻接觸層51及52,由降低通道層與線路 巧之材料諸如高度摻雜之非晶矽所製造,該電阻接觸層相 對於閘極分成兩個部分。 於電阻接觸層51及52之對i部分上形成源極61及汲極 62 該汲極62係橫向延伸,與儲存電容器電極丨丨重疊, 並經由位於閘極絕緣層30中之接觸孔32而連接於相鄰像 元之儲存電容器電極12。即,没極62充作儲存電容器之 -15- 本紙張尺度適用中國國家榡準(CNS ) A4規格(2丨0X297公着) Γ丨': oi—丨 (請先聞讀势面之注;^項再填寫本頁) 訂 經濟部中央標準局貝工消费合作社印聚 A7 B7 五、發明説明(13 ) 第一個電極’而於中間置有閘極絕緣層30之情況下與汲極 62重疊之儲存電容器電極U係爲儲存電容器之第二個電 極。汲極62連接於像元電極63,其係於閘極絕緣層30上 形成,而置於共用電極91之間。禪極61係連接於數據線 ’其係縱向地位於閘極絕緣層3 0上,而自外部傳送顯示信 號》 於源極61、汲極62、及'像元電择63上形成由氮化矽等 材料所製造之鈍化層70。 然而’根據本發明之第五個晏體實例,於基板之所有平 面上形成純化層70 ’若需要r·則可移除一部分純化層% ,以得到夠大之電場。 現在描述製造本發明第五個具體實例之液晶顯示器之方 法。圖17-20係爲顯示圖15及16所示之液晶顯示器之製造 方法之剖面圖。第五個具體實例之製造方法使用5個掩模。 首先,如圖17所示,沉積由鋁等金屬所製造之金屬層, 使用第一個掩模形成圖型,而形成閘極線2〇、共用信號線 90、共用電極91及儲存電容器電極丨丨及12。 如圖18所示,依序沉積由氮化矽或有機絕緣材料等材料 ^製造之閘極絕緣層30、氫化非晶矽層4〇及高度摻雜n 型雜質諸如磷之氫化非晶矽層50。摻雜之非晶珍層5〇 及原始之非晶矽層40使用第二個掩模進行光照蝕刻,而於 閘極上形成島型物。 ν 如圖19所示,使閘極絕緣層30形成圖型,以形成個別 曝露儲存電容器電極11及12之接觸孔31及32。 -16- 本紙張尺度適用中國國家標準(CNS>A4規格(210X297公釐 ** (請先閲讀f-面之注t-事項再填寫本頁)A7 B7 Printed by the Central Standards Bureau of the Ministry of Economic Affairs Ά X. Consumer News Agency 5. Description of Invention (12).圏 16 is a cross section 囷 of the liquid crystal display shown in FIG. 15 along the line χνΐ-χνί. The liquid crystal display of the fifth specific example of the present invention generates an electric field substantially parallel to the substrate by the linear pixel electrode and the linear common electrode which are parallel to each other on the substrate to control the movement of the liquid crystal molecules. As shown in Figs. 15 and 16, a gate line 20 is formed on the transparent insulating substrate 100 in a lateral direction to transmit a tracing signal from the outside. A common signal line 90 is formed on the substrate 100 in parallel with the gate line 20. The gate line 20 is partially used as a gate, and a plurality of spaced common electrodes are formed in the pixel region of the substrate 100 in parallel with each other and connected to the common signal line 90. Storage capacitor electrodes 11 and 12 are formed laterally on the Italian board ι. The storage capacitor electrodes ii and 12 are separated from the gate line 20 and the common line 90 at the same time. A gate insulation layer 30 made of a material such as silicon nitride is formed on the gate pattern line 20, the common signal line 90, the common electrode 91, and the stray capacitor electrodes 11 and 12. The gate insulation layer has individual exposure storage Capacitor electrode}] and 12 contact holes 31 and 32 »A channel layer 40 made of a semiconductor such as amorphous silicon is formed on a portion of the gate insulating layer 30 on a portion of the gate-gate line 20. Resistive contact layers 51 and 52 are formed on the amorphous layer 40. The resistive contact layers 51 and 52 are made of a material that reduces the channel layer and the wiring, such as highly doped amorphous silicon. The resistive contact layer is divided into two parts with respect to the gate. A source electrode 61 and a drain electrode 62 are formed on portions i of the resistive contact layers 51 and 52. The drain electrode 62 extends laterally, overlaps the storage capacitor electrode, and passes through the contact hole 32 in the gate insulating layer 30. A storage capacitor electrode 12 connected to an adjacent pixel. That is, Wuji 62 is used as the storage capacitor of -15. This paper size is applicable to China National Standard (CNS) A4 specification (2 丨 0X297). Γ 丨 ': oi— 丨 (Please read the note of potential situation first; ^ Please fill in this page again.) Order A7 B7 printed by the Central Standards Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperative. V. Description of the invention (13) The first electrode 'with the gate insulating layer 30 in the middle and the drain electrode 62 The overlapping storage capacitor electrode U is the second electrode of the storage capacitor. The drain electrode 62 is connected to the pixel electrode 63 and is formed on the gate insulating layer 30 and is placed between the common electrodes 91. Zen pole 61 is connected to the data line 'It is located vertically on the gate insulating layer 30, and the display signal is transmitted from the outside.' It is formed on the source 61, the drain 62, and the 'pixel electric selection 63. A passivation layer 70 made of silicon and other materials. However, according to the fifth embodiment of the present invention, a purification layer 70 is formed on all the planes of the substrate. If r · is required, a part of the purification layer% can be removed to obtain a sufficiently large electric field. A method of manufacturing a liquid crystal display device according to a fifth embodiment of the present invention will now be described. 17-20 are cross-sectional views showing a method of manufacturing the liquid crystal display shown in Figs. The manufacturing method of the fifth specific example uses five masks. First, as shown in FIG. 17, a metal layer made of a metal such as aluminum is deposited, and a pattern is formed using a first mask to form a gate line 20, a common signal line 90, a common electrode 91, and a storage capacitor electrode.丨 and 12. As shown in FIG. 18, a gate insulating layer 30 made of a material such as silicon nitride or an organic insulating material ^, a hydrogenated amorphous silicon layer 40, and a hydrogenated amorphous silicon layer highly doped with n-type impurities such as phosphorus are sequentially deposited. 50. The doped amorphous layer 50 and the original amorphous silicon layer 40 are photo-etched using a second mask to form islands on the gate. ν As shown in FIG. 19, the gate insulating layer 30 is patterned to form contact holes 31 and 32 that individually expose the storage capacitor electrodes 11 and 12. -16- This paper size applies to the Chinese national standard (CNS > A4 size (210X297mm ** (please read the note on the f-side first and then fill out this page))
經濟部中央標率局貝工消費合作社印製 Α7 Β7 五、發明説明(14 ) ' -- 如圖20所示’於摻雜之非晶矽層50上沉積由鉻等材料 製造(金屬層’使用第四個掩模進行蝕刻,以形成數據線 60、源極及没極61及62及像元電極63。掺雜之非晶矽層 5〇上炙曝露部分係使用源極及汲極61及62充作蝕刻掩模 而蝕刻,將摻雜之非晶矽層分成兩部分,曝露出介於摻雜 之非晶矽層51及52之兩部分之間之原始非晶矽層4〇。 如-圖15及16所示,沉積氮化矽或有機絕緣材料層以 形成鈍化層70。 於本發明第六個具體實例中,形成像元電極,其與共用 信號線重疊而具有高儲存電容1 圖21説明本發明第六個具體實例之液晶顯示器之配置 圖。 如圖2Γ所示,於閘極絕緣層3〇上形成連接於像元電極 63上i像元電極線64。像元電極線64與共用信號線9〇重 疊,而其中放置閘極絕緣層3〇。因此,儲存電容量可大於 第五個具趙實例,因爲於像元電極線及共用信號線9〇 l間產生餘存電容。液晶顯示器之其餘結構與第五個具體 實例相同。 另一万面,於具有儲存電容器而其中相鄰像元之像元電 :充作儲存電容器之一電極之液晶顯示器中,各個儲存電 谷器之參考電壓係爲相鄰像元之像元電壓。如圖3所説明 之本發明第三個具體實例所示,連接於第一個像元之切換 疋件I儲存電容器係浮動,無參考電壓,而最後之像元的 切換疋件僅連接於一個儲存電容器,其他像元則具有兩個 本紙張尺度適用中國國家栊進丨ΓΝ.ς、 II^;---oi------ΐτ------ο *· ,(請先閲積介面之注f項再填寫本頁) •17- 五、發明説明(15 ) A7 B7 經濟部中央榡準局貝工消費合作社印製 連接於像元之切換元件之儲存電容器。 本發明第七個至第九個具體實例中,已解決前述問題。 囷22-24個別爲本發明第七個至第九個具體實例之薄膜電 晶體液晶顯示器之等電路囷。 如圖22所示,於需要顆示之像元睁列之兩末端形成兩行 像元P10、P20、Plf及P2f。因此,用於顯示之每個像元 Pll: P12、P21及P22皆其有兩個連接於像元之切換元件 之儲存電容器。最左側之像元P10及P20具有兩個借存電 容器,兩個儲存電容器中之一個爲浮動,而無參考電壓。 最右側之像元Plf及P2f僅具有一個連接於切換元件之儲 存電容器。最左側及最右侧之像元Pl〇、P2〇、Plf及P2f 係不用於顯示之援擬像元。 另一種解決問題之方法,如囷23所示,係使最左側像元 之错存電容器之一浮動而無參考電壓之末端連接於先前閘 極線’而於像元陣列之最右侧形成另一行模擬像元卩1£及 P2f ° 可於像元陣列之左侧及右侧末端形成兩行模擬像元p i 〇 、P20、Plf及,以使模擬像元ρι〇及p2〇之浮動末端 亨接於先前閘極線,如圖24所示。 圖5所tf之第二個具體實例中,儲存電容器係藉著將儲 存電容器之兩接頭中之—連接於同_行之相都像元而形成 ,其可形成另一列模擬像元。僅具有一個儲存電容器之模 擬像元或具有擁有浮動接頭之儲存電容器之像元無法用以 —卜丨丨":---〇裝I— •* (請先聞讀#面之注舍事項再填寫本頁) 訂 .0Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperative, printed A7 B7 V. Description of the invention (14) '-As shown in Figure 20' deposited on the doped amorphous silicon layer 50 made of chromium and other materials (metal layer ') The fourth mask is used to etch to form the data line 60, the source and cathodes 61 and 62, and the pixel electrode 63. The exposed portion of the doped amorphous silicon layer 50 uses the source and drain 61 And 62 are etched as an etching mask, and the doped amorphous silicon layer is divided into two parts, exposing the original amorphous silicon layer 40 between the two parts of the doped amorphous silicon layers 51 and 52. As shown in Figures 15 and 16, a silicon nitride or organic insulating material layer is deposited to form a passivation layer 70. In a sixth specific example of the present invention, a pixel electrode is formed, which overlaps a common signal line and has a high storage capacitance. 1 FIG. 21 illustrates a configuration diagram of a liquid crystal display device according to a sixth specific example of the present invention. As shown in FIG. 2Γ, an i-pixel electrode line 64 connected to a pixel electrode 63 is formed on the gate insulating layer 30. The pixel electrode The line 64 overlaps the common signal line 90, and a gate insulating layer 30 is placed therein. Therefore, the electricity is stored The amount can be larger than the fifth example, because the remaining capacitance is generated between the pixel electrode line and the common signal line 901. The remaining structure of the liquid crystal display is the same as the fifth specific example. The other ten thousand faces have storage Capacitors and the pixel power of adjacent pixels: In a liquid crystal display that is used as one of the electrodes of a storage capacitor, the reference voltage of each storage valley device is the pixel voltage of adjacent pixels. As shown in Figure 3 As shown in the third specific example of the invention, the storage capacitor I of the switching element I connected to the first pixel is floating and has no reference voltage, while the switching element of the last pixel is only connected to one storage capacitor, and the other pixels are There are two paper standards applicable to China's national development 丨 ΓΝ.ς, II ^; --- oi ------ ΐτ ------ ο * ·, (please read the note f of the product interface first (Fill in this page again) • 17- V. Description of the invention (15) A7 B7 The storage capacitors of the switching elements connected to the pixels are printed by the Pakong Consumer Cooperative of the Central Government Bureau of the Ministry of Economic Affairs. In the example, the aforementioned problems have been solved. Seventh to ninth specific examples of the thin film transistor liquid crystal display and other circuits 囷. As shown in Figure 22, two rows of pixels P10, P20, Plf, and P2f are formed at the two ends of the pixel array that needs to be shown Therefore, each pixel Pll used for display: P12, P21 and P22 has two storage capacitors connected to the switching element of the pixel. The leftmost pixels P10 and P20 have two borrow capacitors, two One of the storage capacitors is floating without a reference voltage. The rightmost pixels Plf and P2f have only one storage capacitor connected to the switching element. The leftmost and rightmost pixels Plo, P2o, Plf and P2f is a dummy cell that is not used for display. Another method to solve the problem, as shown in 囷 23, is to float one of the stray capacitors of the leftmost pixel without a reference voltage terminal connected to the previous gate line, and form another on the far right of the pixel array. One row of simulated pixels 卩 1 £ and P2f ° can form two rows of simulated pixels pi 〇, P20, Plf and at the left and right ends of the pixel array, so that the floating ends of the simulated pixels ρο and p2〇 Connected to the previous gate line, as shown in Figure 24. In the second specific example of tf in Fig. 5, the storage capacitor is formed by connecting one of the two terminals of the storage capacitor to the same phase pixel, which can form another column of analog pixels. An analog pixel with only one storage capacitor or a pixel with a storage capacitor with a floating connector cannot be used—bu 丨 丨 ": --- 〇 装 I— • * (Please first read and read the note on # 面(Fill in this page again) Order. 0
• ί II I --1»1 —·ί ·• ί II I --1 »1 — · ί ·
經濟部中央標率局員工消费合作社印掣 Α7 Β7 五、發明説明(16) 而且,圈7所示之第三個具體實例中,儲存電容器係藉 著將餘存電容器之兩接頭t之—連接於同__行之相都像元 而形成,其可形成另一列及另—行之模擬像元。 如本發明具體實例所述,可藉著形成其兩個接頭中之一 連接於像元之切換元件而另一端連接於相鄰像元之像元電 極之儲存電容器,而降低寄生電容並輕易修補損壞之像元二 於附圖及説明中,已揭示本發明之典型較佳具體實例, 雖然採用特定之條件,但其僅用於—般性之描述,而非限 制’本發明之範圍係設定於以千申請專利範園。 -19- 本紙張尺度適用中國國家標準(CNS ) Α4規格(210X29*?公釐)Printed by the Consumer Standards Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the Invention (16) Moreover, in the third specific example shown in circle 7, the storage capacitor is connected by connecting the two terminals t of the remaining capacitor. It is formed by the pixels of the same phase as the __ line, which can form the simulated pixels of another column and another line. As described in the specific example of the present invention, by forming a storage capacitor in which one of its two connectors is connected to a pixel switching element and the other end is connected to a pixel electrode of an adjacent pixel, the parasitic capacitance can be reduced and repaired easily. Damaged Pixels 2 In the drawings and description, typical and preferred specific examples of the present invention have been disclosed. Although specific conditions are adopted, they are only used for general descriptions, rather than limiting the scope of the present invention. Thousands applied for patent Fanyuan. -19- This paper size applies to China National Standard (CNS) Α4 specification (210X29 *? Mm)
(請先Mtt-背面之Vi*索事項再填寫本頁J(Please fill in this page with the Vi * request on the back of Jtt-J
Claims (1)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019970080231A KR100476597B1 (en) | 1997-12-31 | 1997-12-31 | Thin film transistor liquid crystal display |
| KR1019980015092A KR100552288B1 (en) | 1998-04-28 | 1998-04-28 | Thin Film Transistor Liquid Crystal Display |
| KR1019980017138A KR100529572B1 (en) | 1998-05-13 | 1998-05-13 | Thin film transistor liquid crystal display |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW384408B true TW384408B (en) | 2000-03-11 |
Family
ID=27349665
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW87107634A TW384408B (en) | 1997-12-31 | 1998-05-16 | Liquid crystal displays and a manufacturing method thereof |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP4298819B2 (en) |
| TW (1) | TW384408B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002040486A (en) * | 2000-05-19 | 2002-02-06 | Seiko Epson Corp | Electro-optical device, method for manufacturing the same, and electronic apparatus |
| KR100531478B1 (en) * | 2002-08-16 | 2005-11-28 | 엘지.필립스 엘시디 주식회사 | Liquid crystal display panel and method of dirving the same |
| US8830411B2 (en) * | 2009-01-16 | 2014-09-09 | Samsung Display Co., Ltd. | Array substrate and method of manufacturing the same |
| WO2010089922A1 (en) * | 2009-02-03 | 2010-08-12 | シャープ株式会社 | Active matrix substrate, liquid crystal panel, liquid crystal display device, liquid crystal display unit and television receiver |
| WO2010089820A1 (en) | 2009-02-03 | 2010-08-12 | シャープ株式会社 | Active matrix substrate, liquid crystal panel, liquid crystal display unit, liquid crystal display device and television receiver |
| KR102682788B1 (en) * | 2021-11-19 | 2024-07-12 | 주식회사 라온텍 | Pixel circuits and micro display devices including the same |
-
1998
- 1998-05-16 TW TW87107634A patent/TW384408B/en not_active IP Right Cessation
- 1998-08-25 JP JP23817898A patent/JP4298819B2/en not_active Expired - Fee Related
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| JP4298819B2 (en) | 2009-07-22 |
| JPH11202369A (en) | 1999-07-30 |
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