TW366565B - Manufacturing method of damascene interconnect structures - Google Patents

Abstract

Manufacturing method of damascene interconnect structures, including the following steps: provision of a substrate having interconnect structures, for depositing a first dielectric layer and a second dielectric layer on top of the substrate accordingly for interlayer dielectric layer covering the interconnect structure. Then defining a dielectric window pattern, with etching of the interlayer dielectric layer for forming of cavities exposing the interconnect structure. Then coating an anti-reflection layer for covering of the interlayer dielectric layer with stuffing of the cavities, then defining an interconnect structure pattern on which basis etching the anti-reflective layer and the second dielectric layer for forming the interconnect cavities. Removal of the remaining anti-reflection layer from the interlayer dielectric layer and in the cavity and having the cavity in the first dielectric layer as dielectric window, for forming another metal interconnect structure for stuffing of the dielectric layer and the interconnect cavities as a damascene interconnect structure.