TW351020B - Group III-V compound semiconductor, method of manufacturing the same, and light emitting element - Google Patents
Group III-V compound semiconductor, method of manufacturing the same, and light emitting elementInfo
- Publication number
- TW351020B TW351020B TW085101006A TW85101006A TW351020B TW 351020 B TW351020 B TW 351020B TW 085101006 A TW085101006 A TW 085101006A TW 85101006 A TW85101006 A TW 85101006A TW 351020 B TW351020 B TW 351020B
- Authority
- TW
- Taiwan
- Prior art keywords
- group iii
- compound semiconductor
- manufacturing
- light emitting
- emitting element
- Prior art date
Links
- 150000001875 compounds Chemical class 0.000 title abstract 6
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/82—Heterojunctions
- H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
- H10D62/852—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs being Group III-V materials comprising three or more elements, e.g. AlGaN or InAsSbP
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
- H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Led Devices (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1665195 | 1995-02-03 | ||
| JP7867195 | 1995-04-04 | ||
| JP17872595A JP3713751B2 (ja) | 1995-07-14 | 1995-07-14 | ３−５族化合物半導体および発光素子 |
| JP20595495 | 1995-08-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW351020B true TW351020B (en) | 1999-01-21 |
Family
ID=27456613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085101006A TW351020B (en) | 1995-02-03 | 1996-01-27 | Group III-V compound semiconductor, method of manufacturing the same, and light emitting element |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US6346720B1 (zh) |
| DE (1) | DE19603782A1 (zh) |
| TW (1) | TW351020B (zh) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6440823B1 (en) * | 1994-01-27 | 2002-08-27 | Advanced Technology Materials, Inc. | Low defect density (Ga, Al, In)N and HVPE process for making same |
| DE19613265C1 (de) * | 1996-04-02 | 1997-04-17 | Siemens Ag | Bauelement in stickstoffhaltigem Halbleitermaterial |
| US5729029A (en) * | 1996-09-06 | 1998-03-17 | Hewlett-Packard Company | Maximizing electrical doping while reducing material cracking in III-V nitride semiconductor devices |
| JP3642157B2 (ja) * | 1997-05-26 | 2005-04-27 | ソニー株式会社 | ｐ型ＩＩＩ族ナイトライド化合物半導体、発光ダイオードおよび半導体レーザ |
| US7365369B2 (en) * | 1997-06-11 | 2008-04-29 | Nichia Corporation | Nitride semiconductor device |
| US6555452B2 (en) * | 1997-11-18 | 2003-04-29 | Technologies And Devices International, Inc. | Method for growing p-type III-V compound material utilizing HVPE techniques |
| US7384479B2 (en) | 1998-04-13 | 2008-06-10 | Ricoh Company, Ltd. | Laser diode having an active layer containing N and operable in a 0.6 μm wavelength |
| US6563851B1 (en) * | 1998-04-13 | 2003-05-13 | Ricoh Company, Ltd. | Laser diode having an active layer containing N and operable in a 0.6 μm wavelength band |
| US6423984B1 (en) * | 1998-09-10 | 2002-07-23 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride compound semiconductor |
| WO2001033643A1 (en) | 1999-10-29 | 2001-05-10 | Ohio University | BAND GAP ENGINEERING OF AMORPHOUS Al-Ga-N ALLOYS |
| US7968362B2 (en) | 2001-03-27 | 2011-06-28 | Ricoh Company, Ltd. | Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system |
| JP2004356522A (ja) * | 2003-05-30 | 2004-12-16 | Sumitomo Chem Co Ltd | ３−５族化合物半導体、その製造方法及びその用途 |
| CN100511737C (zh) * | 2004-09-28 | 2009-07-08 | 住友化学株式会社 | Ⅲ-ⅴ族化合物半导体及其制备方法 |
| CN100435359C (zh) * | 2004-10-10 | 2008-11-19 | 晶元光电股份有限公司 | 半导体发光元件及其制造方法 |
| JP5023318B2 (ja) * | 2005-05-19 | 2012-09-12 | 国立大学法人三重大学 | ３−５族窒化物半導体積層基板、３−５族窒化物半導体自立基板の製造方法、及び半導体素子 |
| JP4966530B2 (ja) | 2005-09-15 | 2012-07-04 | 国立大学法人 新潟大学 | 蛍光体 |
| JP2008091789A (ja) * | 2006-10-04 | 2008-04-17 | Hitachi Cable Ltd | 発光ダイオード |
| TWI597862B (zh) * | 2013-08-30 | 2017-09-01 | 晶元光電股份有限公司 | 具阻障層的光電半導體元件 |
| CN104538518B (zh) * | 2015-01-12 | 2017-07-14 | 厦门市三安光电科技有限公司 | 氮化物发光二极管 |
| CN104600165B (zh) * | 2015-02-06 | 2018-03-23 | 安徽三安光电有限公司 | 一种氮化物发光二极体结构 |
| CN119342951B (zh) * | 2024-10-10 | 2025-10-31 | 江西兆驰半导体有限公司 | GaN基LED外延片及制备方法 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1182351B (de) * | 1954-12-23 | 1964-11-26 | Siemens Ag | Halbleiterbauelement mit einem Halbleiterkoerper aus einer halbleitenden Verbindung und Verfahren zu seinem Herstellen |
| US4404265A (en) * | 1969-10-01 | 1983-09-13 | Rockwell International Corporation | Epitaxial composite and method of making |
| JPS553834A (en) | 1978-06-23 | 1980-01-11 | Yasuko Shiomi | Hand shower with water-stop valve |
| DE3124456C2 (de) * | 1980-06-23 | 1985-04-25 | Futaba Denshi Kogyo K.K., Mobara, Chiba | Halbleiterbauelement sowie Verfahren zu dessen Herstellung |
| EP0328393B1 (en) * | 1988-02-09 | 1993-10-06 | Kabushiki Kaisha Toshiba | Semiconductor laser device and the manufacturing method thereof |
| JP3026087B2 (ja) * | 1989-03-01 | 2000-03-27 | 豊田合成株式会社 | 窒化ガリウム系化合物半導体の気相成長方法 |
| JP3160914B2 (ja) * | 1990-12-26 | 2001-04-25 | 豊田合成株式会社 | 窒化ガリウム系化合物半導体レーザダイオード |
| US5173751A (en) * | 1991-01-21 | 1992-12-22 | Pioneer Electronic Corporation | Semiconductor light emitting device |
| US5273933A (en) * | 1991-07-23 | 1993-12-28 | Kabushiki Kaisha Toshiba | Vapor phase growth method of forming film in process of manufacturing semiconductor device |
| JP3352712B2 (ja) * | 1991-12-18 | 2002-12-03 | 浩 天野 | 窒化ガリウム系半導体素子及びその製造方法 |
| US5381756A (en) * | 1992-03-04 | 1995-01-17 | Fujitsu Limited | Magnesium doping in III-V compound semiconductor |
| JP2803791B2 (ja) * | 1992-06-08 | 1998-09-24 | シャープ株式会社 | 半導体素子の製造方法 |
| JP3243768B2 (ja) | 1992-07-06 | 2002-01-07 | 日本電信電話株式会社 | 半導体発光素子 |
| JP2917742B2 (ja) | 1992-07-07 | 1999-07-12 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体発光素子とその製造方法 |
| JPH0661527A (ja) * | 1992-08-07 | 1994-03-04 | Nippon Telegr & Teleph Corp <Ntt> | 半導体発光素子及びその作製方法 |
| JP3091593B2 (ja) * | 1993-01-14 | 2000-09-25 | 日亜化学工業株式会社 | 窒化物半導体発光デバイス用積層体 |
| JP2932467B2 (ja) | 1993-03-12 | 1999-08-09 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体発光素子 |
| DE69425186T3 (de) * | 1993-04-28 | 2005-04-14 | Nichia Corp., Anan | Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung und Verfahren zu ihrer Herstellung |
| JPH06350137A (ja) * | 1993-06-08 | 1994-12-22 | Toyoda Gosei Co Ltd | 窒素−３族元素化合物半導体発光素子 |
| US5604763A (en) * | 1994-04-20 | 1997-02-18 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor laser diode and method for producing same |
| EP0678945B1 (en) * | 1994-04-20 | 1998-07-08 | Toyoda Gosei Co., Ltd. | Gallium nitride group compound semiconductor laser diode and method of manufacturing the same |
| JPH0832112A (ja) * | 1994-07-20 | 1996-02-02 | Toyoda Gosei Co Ltd | ３族窒化物半導体発光素子 |
| US5777350A (en) * | 1994-12-02 | 1998-07-07 | Nichia Chemical Industries, Ltd. | Nitride semiconductor light-emitting device |
| US5740192A (en) * | 1994-12-19 | 1998-04-14 | Kabushiki Kaisha Toshiba | Semiconductor laser |
-
1996
- 1996-01-24 US US08/590,574 patent/US6346720B1/en not_active Expired - Lifetime
- 1996-01-27 TW TW085101006A patent/TW351020B/zh not_active IP Right Cessation
- 1996-02-02 DE DE19603782A patent/DE19603782A1/de not_active Ceased
-
2001
- 2001-12-03 US US09/998,296 patent/US6472298B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US20020053680A1 (en) | 2002-05-09 |
| DE19603782A1 (de) | 1996-08-08 |
| US6346720B1 (en) | 2002-02-12 |
| US6472298B2 (en) | 2002-10-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |