TW350124B - Manufacturing method of semiconductor devices - Google Patents

Manufacturing method of semiconductor devices

Info

Publication number: TW350124B
Authority: TW; Taiwan
Prior art keywords: manufacturing process; groove; manufacturing; semiconductor substrate; semiconductor devices
Prior art date: 1997-07-14

Application number

TW086116380A

Other languages

English (en)

Inventor

Hirokazu Sayama

Takashi Kuroi

Maiko Sakai

Katsuyuki Hotta

Original Assignee

Mitsubishi Electric Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1997-07-14

Filing date

1997-11-04

Publication date

1999-01-11

1997-11-04 Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp

1999-01-11 Application granted granted Critical

1999-01-11 Publication of TW350124B publication Critical patent/TW350124B/zh

Classifications

- H10W10/00—
- H10W10/01—
- H10W10/0147—
- H10W10/17—

Landscapes

Element Separation (AREA)

TW086116380A 1997-07-14 1997-11-04 Manufacturing method of semiconductor devices TW350124B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP9188286A JPH1131742A (ja)	1997-07-14	1997-07-14	半導体装置の製造方法

Publications (1)

Publication Number	Publication Date
TW350124B true TW350124B (en)	1999-01-11

Family

ID=16220983

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW086116380A TW350124B (en)	1997-07-14	1997-11-04	Manufacturing method of semiconductor devices

Country Status (5)

Country	Link
US (1)	US6017800A (zh)
JP (1)	JPH1131742A (zh)
KR (1)	KR100272986B1 (zh)
DE (1)	DE19806300C2 (zh)
TW (1)	TW350124B (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH10303291A (ja) *	1997-04-25	1998-11-13	Nippon Steel Corp	半導体装置及びその製造方法
US6080628A (en) *	1998-05-15	2000-06-27	Vanguard International Semiconductor Corporation	Method of forming shallow trench isolation for integrated circuit applications
US6251749B1 (en) *	1998-09-15	2001-06-26	Texas Instruments Incorporated	Shallow trench isolation formation with sidewall spacer
US6268264B1 (en) *	1998-12-04	2001-07-31	Vanguard International Semiconductor Corp.	Method of forming shallow trench isolation
US6825544B1 (en) *	1998-12-09	2004-11-30	Cypress Semiconductor Corporation	Method for shallow trench isolation and shallow trench isolation structure
KR100351891B1 (ko) *	1999-06-01	2002-09-12	주식회사 하이닉스반도체	반도체 소자 및 그의 제조 방법
JP4832629B2 (ja) *	2000-10-04	2011-12-07	ルネサスエレクトロニクス株式会社	半導体装置
KR100387531B1 (ko) *	2001-07-30	2003-06-18	삼성전자주식회사	반도체소자 제조방법
JP2003163262A (ja) *	2001-11-28	2003-06-06	Mitsubishi Electric Corp	半導体装置およびその製造方法
US6913978B1 (en) *	2004-02-25	2005-07-05	United Microelectronics Corp.	Method for forming shallow trench isolation structure
TWI253686B (en) *	2004-08-03	2006-04-21	Powerchip Semiconductor Corp	Method of fabricating a gate oxide layer
US7981800B1 (en)	2006-08-25	2011-07-19	Cypress Semiconductor Corporation	Shallow trench isolation structures and methods for forming the same
US9666668B2 (en) *	2015-10-27	2017-05-30	Taiwan Semiconductor Manufacturing Co., Ltd.	Semiconductor device structure and method for forming the same
CN113054004B (zh) *	2021-03-11	2022-08-23	电子科技大学	一种应用于集成电路高低压隔离的反向电场耦合隔离结构

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5106777A (en) *	1989-09-27	1992-04-21	Texas Instruments Incorporated	Trench isolation process with reduced topography
JPH05343516A (ja) *	1992-06-05	1993-12-24	Sony Corp	素子分離構造とその製造方法
US5433794A (en) *	1992-12-10	1995-07-18	Micron Technology, Inc.	Spacers used to form isolation trenches with improved corners
JP2955459B2 (ja) *	1993-12-20	1999-10-04	株式会社東芝	半導体装置の製造方法
WO1996002070A2 (en) *	1994-07-12	1996-01-25	National Semiconductor Corporation	Integrated circuit comprising a trench isolation structure and an oxygen barrier layer and method for forming the integrated circuit
JP2762976B2 (ja) *	1995-12-25	1998-06-11	日本電気株式会社	半導体装置の製造方法
TW434802B (en) *	1997-10-09	2001-05-16	United Microelectronics Corp	Method of manufacturing shallow trench isolation

1997
- 1997-07-14 JP JP9188286A patent/JPH1131742A/ja active Pending
- 1997-11-04 TW TW086116380A patent/TW350124B/zh active
- 1997-12-12 US US08/989,941 patent/US6017800A/en not_active Expired - Fee Related
1998
- 1998-02-05 KR KR1019980003268A patent/KR100272986B1/ko not_active Expired - Fee Related
- 1998-02-16 DE DE19806300A patent/DE19806300C2/de not_active Expired - Fee Related

Also Published As

Publication number	Publication date
US6017800A (en)	2000-01-25
KR100272986B1 (ko)	2000-12-01
JPH1131742A (ja)	1999-02-02
KR19990013309A (ko)	1999-02-25
DE19806300C2 (de)	2001-01-25
DE19806300A1 (de)	1999-01-28

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