TW355838B - ESD protection means built on IC substrate - Google Patents
ESD protection means built on IC substrateInfo
- Publication number
- TW355838B TW355838B TW086114812A TW86114812A TW355838B TW 355838 B TW355838 B TW 355838B TW 086114812 A TW086114812 A TW 086114812A TW 86114812 A TW86114812 A TW 86114812A TW 355838 B TW355838 B TW 355838B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- esd protection
- protection means
- means built
- voltage polarity
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 3
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 230000003068 static effect Effects 0.000 abstract 1
Landscapes
- Emergency Protection Circuit Devices (AREA)
- Structure Of Printed Boards (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
An ESD protection means built on IC substrate that contains: an oscillating circuit with output of first voltage polarity signal; and a pulse generator that generates electric pulses corresponding to the said oscillating signal and contains at least second voltage polarity that is opposite in polarity with the first voltage polarity; and a minor carrier injection mechanism to trigger electric static discharge injected into the substrate for protection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW086114812A TW355838B (en) | 1997-10-09 | 1997-10-09 | ESD protection means built on IC substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW086114812A TW355838B (en) | 1997-10-09 | 1997-10-09 | ESD protection means built on IC substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW355838B true TW355838B (en) | 1999-04-11 |
Family
ID=57940305
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW086114812A TW355838B (en) | 1997-10-09 | 1997-10-09 | ESD protection means built on IC substrate |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW355838B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI402965B (en) * | 2010-07-19 | 2013-07-21 | Lsi公司 | Defect rate immunity technique for implementing decoupling capacitors based on metal insulator metals |
-
1997
- 1997-10-09 TW TW086114812A patent/TW355838B/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI402965B (en) * | 2010-07-19 | 2013-07-21 | Lsi公司 | Defect rate immunity technique for implementing decoupling capacitors based on metal insulator metals |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |