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TW332914B - The rework method for damage-free bonding pad of IC - Google Patents

The rework method for damage-free bonding pad of IC

Info

Publication number
TW332914B
TW332914B TW085100423A TW85100423A TW332914B TW 332914 B TW332914 B TW 332914B TW 085100423 A TW085100423 A TW 085100423A TW 85100423 A TW85100423 A TW 85100423A TW 332914 B TW332914 B TW 332914B
Authority
TW
Taiwan
Prior art keywords
bonding pad
etch
etching technology
metal
layer
Prior art date
Application number
TW085100423A
Other languages
Chinese (zh)
Inventor
Sen-Fwu Chen
Jie-Shing Wu
Bor-Tau Chuu
Wenn-Jen Jang
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Priority to TW085100423A priority Critical patent/TW332914B/en
Application granted granted Critical
Publication of TW332914B publication Critical patent/TW332914B/en

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Abstract

A rework method for damage-free bonding pad of IC, it includes: Form field oxide on semiconductor substrate for isolating electricity activity area; Produce electricity device inside the electricity activity area; Deposit insulating layer, and use lithography and plasma etching technology to etch insulating layer to form contact window; Form metal layer, and use lithography and etching technology to etch metal to form metal interconnection, which is across the contact window to electrically contact with electricity device; Deposit passivation layer, and use lithography and etching technology to etch passivation layer to expose bonding pad composed by metal; Deposit dielectric layer to cover the exposed bonding pad, to isolate bonding pad to contact with outside; Repeat above step, to proceed rework for bonding pad.
TW085100423A 1996-01-15 1996-01-15 The rework method for damage-free bonding pad of IC TW332914B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW085100423A TW332914B (en) 1996-01-15 1996-01-15 The rework method for damage-free bonding pad of IC

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW085100423A TW332914B (en) 1996-01-15 1996-01-15 The rework method for damage-free bonding pad of IC

Publications (1)

Publication Number Publication Date
TW332914B true TW332914B (en) 1998-06-01

Family

ID=58262822

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085100423A TW332914B (en) 1996-01-15 1996-01-15 The rework method for damage-free bonding pad of IC

Country Status (1)

Country Link
TW (1) TW332914B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI747181B (en) * 2020-01-07 2021-11-21 大陸商長江存儲科技有限責任公司 Metal-dielectric bonding structure and method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI747181B (en) * 2020-01-07 2021-11-21 大陸商長江存儲科技有限責任公司 Metal-dielectric bonding structure and method thereof
US11495569B2 (en) 2020-01-07 2022-11-08 Yangtze Memory Technologies Co., Ltd. Metal-dielectric bonding method and structure
US11798913B2 (en) 2020-01-07 2023-10-24 Yangtze Memory Technologies Co., Ltd. Metal-dielectric bonding method and structure
US11978719B2 (en) 2020-01-07 2024-05-07 Yangtze Memory Technologies Co., Ltd. Metal-dielectric bonding method and structure

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