[go: up one dir, main page]

TW337037B - Device for monitoring charges generated by plasma induction and process thereof - Google Patents

Device for monitoring charges generated by plasma induction and process thereof

Info

Publication number
TW337037B
TW337037B TW086106176A TW86106176A TW337037B TW 337037 B TW337037 B TW 337037B TW 086106176 A TW086106176 A TW 086106176A TW 86106176 A TW86106176 A TW 86106176A TW 337037 B TW337037 B TW 337037B
Authority
TW
Taiwan
Prior art keywords
terminal
insulation
charges generated
plasma induction
transistor
Prior art date
Application number
TW086106176A
Other languages
Chinese (zh)
Inventor
Biing-Yueh Tsuei
Tzong-Ru Yang
Original Assignee
Ind Tech Res Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ind Tech Res Inst filed Critical Ind Tech Res Inst
Priority to TW086106176A priority Critical patent/TW337037B/en
Application granted granted Critical
Publication of TW337037B publication Critical patent/TW337037B/en

Links

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

A device for monitoring charges generated by plasma induction, which comprises: an antenna; a resistance having first terminal and second terminal, the first terminal of the resistance being connected to the antenna; a photoelectric diode group including a plurality of photoelectric diodes connected in series; an insulation transistor having a gate, a source and a drain, the gate of the insulation transistor being connected with the second terminal of the photoelectric diode group; an insulation diode having a first terminal and a second terminal, the first terminal of the insulation diode being connected with the source of the insulation transistor; a storage capacitor having a first terminal and a second terminal; and a pass transistor having a gate, a source and a drain.
TW086106176A 1997-05-09 1997-05-09 Device for monitoring charges generated by plasma induction and process thereof TW337037B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW086106176A TW337037B (en) 1997-05-09 1997-05-09 Device for monitoring charges generated by plasma induction and process thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086106176A TW337037B (en) 1997-05-09 1997-05-09 Device for monitoring charges generated by plasma induction and process thereof

Publications (1)

Publication Number Publication Date
TW337037B true TW337037B (en) 1998-07-21

Family

ID=58263184

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086106176A TW337037B (en) 1997-05-09 1997-05-09 Device for monitoring charges generated by plasma induction and process thereof

Country Status (1)

Country Link
TW (1) TW337037B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI708366B (en) * 2020-03-10 2020-10-21 新唐科技股份有限公司 Electrostatic discharge protection circuit for starting circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI708366B (en) * 2020-03-10 2020-10-21 新唐科技股份有限公司 Electrostatic discharge protection circuit for starting circuit

Similar Documents

Publication Publication Date Title
TW340261B (en) Semiconductor device and the manufacturing method
DE69614949D1 (en) Power semiconductor device with insulated trench gate
TW371367B (en) Method for fabricating semiconductor device
EP0271942A3 (en) Mos power structure with protective device against overvoltages and manufacturing process therefor
MY109880A (en) Substituted biphenylpyridones
MY120620A (en) Charge transfer apparatus and method therefor
TW328626B (en) Semiconductor device
EP0807979A3 (en) Diode
SE9500761D0 (en) Protection circuit for series-connected power semiconductors
EP0616373A3 (en) Semiconductor photoelectric conversion device and manufacturing method.
EP1465259A3 (en) Photoelectric X-ray converter, its driving method, and system including the photoelectric X-ray converter
TW332314B (en) The semiconductor device and its producing method
FR2738079B1 (en) SEMICONDUCTOR DEVICE WITH TRENCH AND MANUFACTURING METHOD
IL150812A0 (en) Method and device for transforming crystalline or semicrystalline polymers
EP0665484A3 (en) Power reducing circuit for synchronous semiconductor device.
DE69530077D1 (en) Start circuit, MOS transistor with such a circuit
SE9602061L (en) Power transmission system using high voltage direct current
ATE185749T1 (en) POWER COLLECTOR
ITMI913265A1 (en) SEMICONDUCTOR DEVICE INCLUDING AT LEAST A POWER TRANSISTOR AND AT LEAST A CONTROL CIRCUIT, WITH DYNAMIC INSULATION CIRCUIT, INTEGRATED IN A MONOLITHIC MANNER IN THE SAME PLATE
TW350116B (en) A semiconductor device and the manufacturing method
TW340975B (en) Semiconductor memory
DE59610322D1 (en) MOS semiconductor device with improved transmission properties
TW337037B (en) Device for monitoring charges generated by plasma induction and process thereof
IT1214606B (en) INTEGRATED DYNAMIC PROTECTION DEVICE, IN PARTICULAR FOR INTEGRATED CIRCUITS WITH INPUT IN MOS TECHNOLOGY.
DE59608519D1 (en) NETWORK-FRIENDLY RECTIFIER-CONTROLLED, VOLTAGE-INJECTING INCLINED TRANSFORMER WITH HIGH PERFORMANCE

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees