Λ7 :Γ 五、發明説明（1 ) 發明背景 1.發明範疇 本發明係關於用於積體電路乾式蝕刻製程中之溶液，更 特定言之’係關於去除乾式蝕刻殘餘物之溶液，及使用此 溶液以去除乾式蚀刻殘餘物之方法。 2 .先前技藝 積體電路之製法是將半導體基材表面（如矽晶片）在加一 層導電金屬（如銘）之後，再包覆一層光阻物質，然後在光 阻表面施加對應於所欲電路元件正光阻或負光阻意義之圖 樣’再暴露於適當的活化射線（如光線或X-射線）以活化該 經曝光之光阻層，使其經曝光或未經曝光之區域在顯像溶 液中有不同之溶解度，及以顯像溶液處理該被活化之光阻 層以移除光阻層足可溶性區域，如此可使基材表面暴露出 來以在其上施加所欲之電路元件，其係藉沈積導電性金屬 或金屬氧化物來達成，或藉以如硼離子對基材本體作離子 植入來達成，或者，移除光阻層之可溶性區域可使預加之 經濟部中央標準局貝工消f合作杜印製 導電層暴露出來，其可被蚀刻以除去除了所欲電路元件以 外之所有其他部份。 光阻層可爲"正光阻"，其在海偾士、. 卉彺頌像中被活化之部份變成可 溶性，或爲"負光阻"，其在顯#由 丹在顯像中被活化之部份變成不溶 性。”正"光阻可包括適當的谢恥 ；，，_ 田。树月EJ，例如笨酚-勝樹脂，如Λ7: Γ V. Description of the invention (1) Background of the invention 1. Scope of the invention The present invention relates to a solution used in the dry etching process of integrated circuits, more specifically, it relates to a solution for removing dry etching residues, and the use of this Solution to remove dry etching residues. 2. The prior art integrated circuit manufacturing method is to add a layer of conductive metal (such as Ming) on the surface of the semiconductor substrate (such as a silicon wafer), and then coat a layer of photoresist, and then apply a circuit corresponding to the desired circuit on the photoresist surface The pattern of positive or negative photoresist of the component 'is then exposed to appropriate activating rays (such as light or X-ray) to activate the exposed photoresist layer so that the exposed or unexposed areas are in the developing solution There are different solubility in the solution, and the activated photoresist layer is treated with a developing solution to remove the soluble area of the photoresist layer, so that the surface of the substrate can be exposed to apply the desired circuit element on it. This can be achieved by depositing a conductive metal or metal oxide, or by ion implantation of the substrate body such as boron ions, or removing the soluble area of the photoresist layer can be added to the Ministry of Economic Affairs ’Central Standards Bureau. f. The printed conductive layer is exposed, which can be etched to remove all other parts except the desired circuit components. The photoresist layer may be " positive photoresistance ", and the activated part of it in the image of Haixun and Huihuisong will become soluble, or it may be " negative photoresistance ", which is shown in # 由 丹 在 显The activated part of the image becomes insoluble. "Positive" photoresist may include appropriate shame; ,, _ Tian. Shuyue EJ, such as stupid phenol-sheng resin, such as
lir^TYPE\MFY\TS.DQC (請先閱讀背面之注意事ίρΛ填寫本頁) 苯酚-甲醛樹脂、丙晞酸酷或甲基两缔酸樹脂，聚； 皮酸樹脂，或其他交聯樹脂’而”負"光阻物質可包 異戍二締物質。通常光阻層在顯像後再於高溫下洪烤^ 本紙張尺度適爪中國渴家橾隼icNS ) 五、發明説明（2 ) 保發生交聯。 在施加所欲之積體電路元件$其 %匕1干主基貝上後，若其製備係供 進-步施加積體電路元件時，光阻層之殘餘物必須以非常 向標準I效率除去。光阻剥離溶液即係用於此目的中，如 美國專利4,9 17，122號和美國專利第4,9 63,3 42號中所述 〇 在現今超大型積體電路（VLSI)或極大型積體電路 (ULSI)蝕刻製％中，乾式蝕刻所形成邊牆護膜 (sidewall passivation)常是用於達成蝕刻單向性 (anisotropic),如 J . L · V o s s e n , e t a i, j v a c s c 工.lir ^ TYPE \ MFY \ TS.DQC (please read the notes on the back first to fill in this page) Phenol-formaldehyde resin, propionate or methyl diacid resin, poly; skin acid resin, or other cross-linked resin 'Negative " photoresist can include isoprene. Generally, the photoresist layer is baked at high temperature after imaging ^ This paper size is suitable for China ’s Kejia Falcon icNS) V. Description of the invention (2 ) To ensure cross-linking. After applying the desired integrated circuit element $ its% d 1 on the main base, if the preparation is for further application of the integrated circuit element, the residue of the photoresist layer must be Very efficient removal to standard I. The photoresist stripping solution is used for this purpose, as described in U.S. Patent No. 4,9 17,122 and U.S. Patent No. 4,9 63,32 In the bulk circuit (VLSI) or very large integrated circuit (ULSI) etching system, dry etching formed by the side wall passivation (sidewall passivation) is often used to achieve etching unidirectional (anisotropic), such as J. L · V ossen, etai, jvacsc workers.
Technol.Al,1 45 3 ( 1 9 8 3 );J.H.Thomas,et al, Appl-Technol.Al, 1 45 3 (1 9 8 3); J.H.Thomas, et al, Appl-
Phys. Lett. 4 3 , 8 5 9 ( 1 9 8 3 ) ; D . Thomson, et al, Appl. Phys. Lett. 146,1103(1985);^ J.M E.Harper, et al, J. Electrochem. Soc. 經濟部中央標準扃員工消费合作杜印裝 128 ,1077(1981)中所描述。蝕刻複晶矽（p〇ly_si)時， 以氣或溴化氫爲主的蝕刻化學中，大多加入氧以增加單向 性並同時增加對氧化層的選擇性，如j M 〇 r丨m 〇 t 〇，e t al，Digest of papers. Microprocess 2 0 2 ( 1 992 )中 所描述。以氣氣爲蚀刻氣體蚀刻複晶矽時，主要是矽和氣 反應產生氣化矽，當蝕刻氣體中含有氧，氣化矽會被氧化 成礼化妙，如 K_V.Guinn，et al, J.Vac. Sci. Technol. B 13,214(1995)中所描述。而此氧化矽就是 所謂邊牆護膜，保護被蝕刻的材料不會造成等向性 (i s o t r 〇 p i c )蝕刻，而此乾式蚀刻後所形成之邊牆護膜， IMTYPE'MFYVTS.DOC 3 - 5 - 本紙伕尺度適用十國闯家樣準（CNS ) A4现格（2丨0X297公釐) 296405 五、 發明説明（ 經濟部中央標隼局員工消费合作社印袈Phys. Lett. 4 3, 8 5 9 (1 9 8 3); D. Thomson, et al, Appl. Phys. Lett. 146, 1103 (1985); ^ JM E. Harper, et al, J. Electrochem. Soc. Described in the Central Standard of the Ministry of Economic Affairs, Employee Consumer Cooperation Du Printing 128, 1077 (1981). When etching polycrystalline silicon (p〇ly_si), most of the etching chemistry based on gas or hydrogen bromide adds oxygen to increase the unidirectionality and at the same time increase the selectivity to the oxide layer, such as j M 〇r 丨 m 〇 t 〇, et al, Digest of papers. Microprocess 2 0 2 (1 992). When gas is used as an etching gas to etch polycrystalline silicon, mainly silicon and gas react to produce vaporized silicon. When the etching gas contains oxygen, the vaporized silicon will be oxidized into politeness, such as K_V.Guinn, et al, J. Vac. Sci. Technol. B 13,214 (1995). The silicon oxide is the so-called side wall protective film, which protects the etched material from isotropic (isotr 〇pic) etching, and the side wall protective film formed after this dry etching, IMTYPE'MFYVTS.DOC 3-5 -The paper scale is applicable to the national standard of the ten countries (CNS) A4 (2 丨 0X297mm) 296405 V. Description of invention (imprinted by the Employee Consumer Cooperative of the Central Standard Falcon Bureau of the Ministry of Economic Affairs
用傳統臭氧灰化及煮硫酸並不能完全去除，因爲它是氧化 矽，所以硫酸並不能去除它。一般製程可能是在臭氧灰化 及煮硫酸處理完畢以後，再浸泡稀氫氟酸，而且要短時間 ，以免影響底下的氧化層，或是使用剥離劑（stripper)也 可以去除i ’但在使用上可能較不方便。 因此，此技藝中仍需要發展更方便且經濟之去除乾式蝕刻 殘餘物之方法。 碧1明要點 本發明一方面係關於在硫酸中添加含氟化合物（較佳爲氫 氟酸和氟化銨）所形成之溶液，可用於完全去除乾式蚀刻 殘餘物。 本發明另一方面係關於利用添加含氟化合物（較佳爲氫氟 酸和氟化銨）於硫酸中之溶液以去除乾式蚀刻殘餘物之方 法。 圖式説明 圖1説明使用傳統之光阻去除法及本發明新穎之光阻去除 法於積體電路製造過程中之流程圖。 圖2爲使用傳統之光阻去除法後之晶片的放大圖，放大倍 數爲1 3, 1〇〇倍。 圖3爲使用本發明新穎之光阻去除法後之晶片的放大圖， 放大倍數爲1丨，〇 〇 〇倍。 發明詳述 在製造積體電路的過程中，從晶片開始在成長薄膜前， 必須要清潔晶片表面，然後成長二氧化矽及複晶矽，再上 U:\TYPE\MFY\TS.DOC υ：\ > τ rcMvir τ u a.uwu ^ 6 本紙張尺度適用中國國家標準（CNS 見格（2Ι〇 χ 297々^ (諳先閲讀背面之注意事i"填寫本頁) 訂 气 五、發明説明（4 ) 經濟部中央標隼局貝工消費合作社印犁 光阻然後曝光及㈣，最後㈣彳及去纽，整個實驗流程 如圖i所示。傳統去除光阻方法係以臭氡灰化及煮硫酸的 方法’並不能把乾式蚀刻户斤形成殘餘物去除，如圖2所示 ，在製程中必彡貞再經浸泡稀氫氟酸或剝離劑才可去除它， 而本發明則在去除光阻方法中’以臭氧灰化後要煮硫酸時 ，在硫酸中添加含氟化合物形成—個混合溶液，而且控制 硫酸及含氟化合物的比例’就可以把乾式蝕刻所形成的殘 餘物完全去除，如圖3所示。此方法簡單，並不需要增加 步驟，把傳統的方法結合成一個步驟，所有的實驗流程如 圖1所示。 本發明用於去除乾式姓刻殘餘物之溶液，包括硫酸和含 氟化合物’重量比例在1 0 ·· 1至1 〇 0 0 :丨之範圍内，較佳在 100:1至700:1之範圍，更佳在300:1至500:1之範圍。 其中該含氟化合物可爲任何含有氟的化合物，較佳者係 由氟離子和單價陽離子（如鹼金屬離子、銨離子和氫離子） 所形成之化合物，最佳者爲氫氟酸和氟化銨。此溶液之製 備方式是在硫酸中添加適當比例氫氟酸或氟化銨，使用時 再加入過氧化處，溫度爲約1 0 〇 C至1 4 0 °C，以約1 2 0 X) 爲較佳。所使用之原料成份爲一般市售者，例如最常見的 硫酸濃度爲約9 6 %，過氧化氫爲約3 1 %，氫氟酸爲約4 9 % ，氟化銨爲約4 0 %。 使用本發明方法去除乾式蚀剑殘餘物時，不侵有機物也 可以被去除，連無機物像二氧化矽之類也可以被去除。它 的使用並不須要增加製程困難’只要在乾式触刻完後要去 U:\TYPE\MFY\TS.DOC 3 請 先 閱 讀 背 之 注 意 事 J歹㈣ Λ 填 寫 本 頁 訂 \ 本紙張尺度適用中國國家標準（〇^)八4規格（2丨0/297公釐） Λ7 ;Γ 五、發明説明（5 ) ~ 除光阻及殘餘物時，把經臭氧灰化的晶片浸泡在硫酸和含 氣化合物之混合溶液中，壓力爲爲1大氣壓，溫度約爲 1 〇 0 C至1 4 0 °c，以約1 2 0 °C爲較佳，進行約丨〇分鐘，即 可70全去除光阻及在乾式蝕刻所形成之邊牆護膜，且對複 晶矽（Poly-SU表面沒有影響，且對底層的氧化層（Si〇2) 蝕刻率也很低，在1 A / m 1 η以下。其中臭氧灰化的操作是 把經過蚀刻的晶片送入通有臭氧氣體所分解產生的氧氣和 氧原子中’由於光阻含有大量的碳原子，經由高溫反應產 生二氧化竣，由偵測C 0 2的含量就可知道反應是否完成3 此方法簡單、迅速，不需要額外再使用剝離劑或其它步 驟的溶液，可以降低成本’可行性高’具有相當高的實用 性。.其適用之光阻種類設用限定，g _線，i _線，深紫外光 ’電子束，X -射線光阻都可使用。 下列實例係用以進一步説明本發明，但不限制本發明之 範圍。凡熟習是項技藝者可知之替代和修飾，均涵蓋於本 發明之精神和範圍中。 實例1 所使用之光阻爲日本F U J I - H U N T公司所生產g _線光阻 ，產品名稱爲F Η - 6 4 0 0 L正光阻，利用荷蘭a s Μ公司的 PAS2500/10的g -線光學步進機（stepper)，進行曝光， 顯影劑爲F U J I - H U N T的產品F H D - 5，成份爲氫氧化第四 級銨（T M A Η ) 2 · 3 8 %，顯影時間6 〇杪。蝕刻之方式係以 電子迴旋共振式（Electron Cycl〇tron Res〇nance E C R )蝕刻機來蚀刻3 0 0 〇 A複晶矽。使用氣氣 -^l\TYPE\MFV\T?； p〇c 3__： ^-一 ____ 本紙張尺度適用中國國家標準（CNS ) Λ4現格（210X 297公嫠） (請先閱讀背面之注意事^"填寫本頁 、-0 經濟部中央標準局員工消费合作社印製 A7 B7 經濟部中央標準局貝工消费合作社印裝 五、發明説明（6 ) (Cl2,95sccm)和氧氣（〇2,5sccm)，以250w微波來產生 電漿，35ν/射頻（RF)提供DC Bias，反應室壓力爲3m Torr，-20°C，蝕刻時間7〇秒，對複晶矽的蚀刻率爲 2 6 1 2入/ m 1 η，對二氧化矽的蝕刻率爲2 6 A / m i η，對光阻 爲7 6 6 A / m 1 η。在選擇性方面，複晶矽對二氧化矽 (2612/26)爲100，複晶矽對光阻（26丨2/766)爲34。其 中 sccm(standard cubic centimeter per minute)係 指每分鐘之標準立方公分。 比較實例 在蚀刻之後，用傳統之光阻去除法除去光阻。傳統之光 阻去除法係先以臭氧灰化’進行臭氧灰化的條件，每次單 片晶片，溫度200〜300 °C，以臭氧（〇3)分解出的氧和光 阻的碳反應產生C Ο 2，平均時間！分鐘可反應完全。然後 再以硫酸和過氧化氫混合物浸泡，在下處理1〇分鐘 。所得之經處理晶片放大圖示於圖2中，在此階段，只能 去除光阻，而邊牆護膜等蝕刻殘餘則無法被除去，尚需要 進一步以稀氫氟酸或剝離劑處理。 實例2 在蝕刻之後，用本發明之光阻去除法除去光阻。本發明 t光阻去除法係先以臭氧灰化，進行方式和比較實例相同 。然後再以硫酸、氫氣酸和過氧化氫之混合物浸泡，在 丨2 0°C下處理1 〇分鐘，其中（硫酸+氫氟酸）與過氧化氬的 體積比爲3 : 1。所得之經處理晶片放大圖示於圖3中，在此 举一步驟中，即可完全去除光阻及在蝕刻中所形成之邊牆 U:\TVPE\MFY\TS.DOC 3 (請先閱讀背面之注意事^"填寫本頁) 、va 免 五、發明説明（ 護膜 實例 ，且對複晶矽和底層二氧化矽薄膜無影 響。 、在蝕刻之後，用本發明之光阻去除法除去光阻。本發明 (光阻去除法係先以臭氧灰化，進行方式和比較實例相同 °然後再以硫酸、氟化銨和過氧化氫之混合物浸泡，在 120C下處理10分鐘，其中（硫酸+氟化銨）與過氧化氫的 體積比爲3 : 1。所得之經處理晶片放大之後，< 看出在此 單一步驟中’即可完全去除光阻及在蝕刻中所形成之邊牆 護膜’且對複晶矽和底層二氧化矽薄膜無影塑。 請先閲讀背面之注意事一"填寫本頁) -" 經濟部中央標隼局貝工消費合作杜印狀 10 - U:\TYPE\MFY\TS.DOC 3 本紙張尺度適用中國國家搮準（CNS > A4規格（210X297公釐）Traditional ozone ashing and boiling sulfuric acid cannot be completely removed, because it is silica, so sulfuric acid cannot remove it. The general process may be to soak the dilute hydrofluoric acid after the ozone ashing and sulfuric acid treatment is completed, and for a short time, so as not to affect the underlying oxide layer, or use a stripper (stripper) can also remove i 'but in use May be less convenient. Therefore, there is still a need to develop a more convenient and economical method for removing dry etching residues in this technique. The main point of this invention is that one aspect of the present invention relates to a solution formed by adding a fluorine-containing compound (preferably hydrofluoric acid and ammonium fluoride) to sulfuric acid, which can be used to completely remove dry etching residues. Another aspect of the invention relates to a method of removing dry etching residues by using a solution of a fluorine-containing compound (preferably hydrofluoric acid and ammonium fluoride) in sulfuric acid. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 illustrates a flow chart in the manufacturing process of an integrated circuit using the conventional photoresist removal method and the novel photoresist removal method of the present invention. Fig. 2 is an enlarged view of the wafer after using the conventional photoresist removal method, with a magnification of 1,3,100 times. FIG. 3 is an enlarged view of the wafer after using the novel photoresist removal method of the present invention, and the magnification is 1.0 × 1000. DETAILED DESCRIPTION OF THE INVENTION In the process of manufacturing an integrated circuit, it is necessary to clean the surface of the wafer before growing the thin film from the wafer, then grow silicon dioxide and polycrystalline silicon, and then apply U: \ TYPE \ MFY \ TS.DOC υ: \ > τ rcMvir τ u a.uwu ^ 6 This paper scale is applicable to Chinese national standards (CNS see grid (2Ι〇χ 297々 ^ (remember to read the notes on the back first i " fill in this page). (4) Imprinted photoresist of Beigong Consumer Cooperative of the Central Standard Falcon Bureau of the Ministry of Economic Affairs, then exposure and (iv), and finally, the new experimental process is shown in Figure i. The traditional photoresist removal method is to use stink radon ashes and The method of boiling sulfuric acid cannot remove residues formed by dry etching. As shown in Figure 2, it must be immersed in dilute hydrofluoric acid or a stripping agent in the process to remove it. In the photoresist method, when sulfuric acid is to be boiled after ashing with ozone, add a fluorine-containing compound to the sulfuric acid to form a mixed solution, and control the ratio of sulfuric acid and fluorine-containing compound. The residue formed by dry etching can be completely removed , As shown in Figure 3. This side It is simple and does not require additional steps. The traditional method is combined into one step. All the experimental procedures are shown in Figure 1. The present invention is used to remove the residue of the dry surname, including sulfuric acid and fluorine-containing compounds' weight ratio in 1 0 ·· 1 to 1 〇0 0: 丨, preferably in the range of 100: 1 to 700: 1, more preferably in the range of 300: 1 to 500: 1. Wherein the fluorine-containing compound may be any Fluorine-containing compounds, preferably compounds formed by fluoride ions and monovalent cations (such as alkali metal ions, ammonium ions and hydrogen ions), and the best ones are hydrofluoric acid and ammonium fluoride. The preparation method of this solution is Add the appropriate proportion of hydrofluoric acid or ammonium fluoride to sulfuric acid, and then add the peroxide at the time of use, the temperature is about 100 ° C to 140 ° C, preferably about 1 2 0 X). The used The raw material components are generally commercially available, for example, the most common sulfuric acid concentration is about 96%, hydrogen peroxide is about 31%, hydrofluoric acid is about 49%, and ammonium fluoride is about 40%. Use of the present invention When removing the residue of dry sword erosion, non-invasive organic matter can also be removed, even inorganic matter like Silicone and the like can also be removed. Its use does not need to increase the difficulty of the process' as long as you have to go to U: \ TYPE \ MFY \ TS.DOC 3 after dry etching, please read the notes on the back J 歹 ㈣ Λ Fill in this page to order \ The paper size is in accordance with Chinese National Standard (〇 ^) 84 specifications (2 丨 0 / 297mm) Λ7; Γ 5. Description of invention (5) ~ When removing photoresist and residues, put the ozone The ashed wafers are immersed in a mixed solution of sulfuric acid and gas-containing compounds at a pressure of 1 atm and a temperature of about 100 ° C to 140 ° C, preferably about 120 ° C. 〇 minutes, you can completely remove the photoresist and the side wall protective film formed by dry etching in 70, and it has no effect on the surface of the polycrystalline silicon (Poly-SU), and the etching rate of the underlying oxide layer (Si〇2) is also very good. Low, below 1 A / m 1 η. The operation of ozone ashing is to send the etched wafer into the oxygen and oxygen atoms generated by the decomposition of ozone gas. Because the photoresist contains a large number of carbon atoms, the high-temperature reaction produces dioxide. The detection of C 0 The content of 2 can know whether the reaction is completed. 3 This method is simple and rapid, without the need to use additional stripping agents or other steps of the solution, which can reduce costs. 'High feasibility' has a very high practicability. .The applicable types of photoresist are limited, g _ line, i _ line, deep ultraviolet light ’electron beam, X-ray photoresist can be used. The following examples are used to further illustrate the present invention, but do not limit the scope of the present invention. Any replacement and modification known to those skilled in the art are included in the spirit and scope of the present invention. Example 1 The photoresist used is a g_line photoresist produced by FUJI-HUNT of Japan, and the product name is F Η 6 4 0 0 L positive photoresist, using the g-line optical step of PAS2500 / 10 of the Dutch company As M Stepper, exposure, the developer is FUJI-HUNT product FHD-5, the component is the fourth-grade ammonium hydroxide (TMA Η) 2 · 3 8%, the development time is 60 杪. The etching method is to etch 300 Å A polycrystalline silicon with an electron cyclotron resonance etch machine. Use gas- ^ l \ TYPE \ MFV \ T ?; p〇c 3__: ^-一 ____ This paper scale is applicable to the Chinese National Standard (CNS) Λ4 present grid (210X 297 public daughter) (please read the notes on the back first Thing ^ " Fill in this page, -0 Printed by the Ministry of Economic Affairs, Central Bureau of Standards, Employee Consumer Cooperative A7 B7 Printed by the Ministry of Economic Affairs, Central Bureau of Standardization, Beigong Consumer Cooperative V. Description of invention (6) (Cl2, 95sccm) and oxygen (〇2 , 5sccm), generating plasma with 250w microwave, DC Bias provided by 35ν / radio frequency (RF), reaction chamber pressure 3m Torr, -20 ° C, etching time 70 seconds, etching rate of polycrystalline silicon is 2 6 1 2 into / m 1 η, the etching rate of silicon dioxide is 2 6 A / mi η, the photoresist is 7 6 6 A / m 1 η. In terms of selectivity, polycrystalline silicon to silicon dioxide (2612 / 26) is 100, polycrystalline silicon to photoresist (26 丨 2/766) is 34. Among them sccm (standard cubic centimeter per minute) refers to the standard cubic centimeters per minute. Comparative example After etching, use traditional light The resist removal method removes the photoresist. The traditional photoresist removal method is the condition of ozone ashing by ozone ashing, the temperature of each wafer is 200 ~ 300 ° C, the oxygen decomposed by ozone (〇3) reacts with the carbon of the photoresist to produce C 〇2, the average time! The reaction can be completed in minutes! Then it is immersed in a mixture of sulfuric acid and hydrogen peroxide, and then treated for 10 minutes. The enlarged view of the processed wafer is shown in Figure 2. At this stage, only the photoresist can be removed, and the etching residue such as the side wall protective film cannot be removed, and further treatment with dilute hydrofluoric acid or a stripping agent is needed. Example 2 In After etching, the photoresist removal method of the present invention is used to remove the photoresist. The t photoresist removal method of the present invention is first ashed with ozone in the same manner as the comparative example. Then it is immersed in a mixture of sulfuric acid, hydrogen acid and hydrogen peroxide , Treated at 丨 20 ° C for 10 minutes, where the volume ratio of (sulfuric acid + hydrofluoric acid) to argon peroxide is 3: 1. The enlarged diagram of the resulting processed wafer is shown in Figure 3, here is a In the step, you can completely remove the photoresist and the side wall U: \ TVPE \ MFY \ TS.DOC 3 (please read the notes on the back ^ " fill in this page), va free five, invention Description (Example of protective film, and on the polycrystalline silicon and the underlying dioxide The silicon film has no effect. After the etching, the photoresist is removed by the photoresist removal method of the present invention. The present invention (photoresist removal method is to first use ozone ashing, the method is the same as the comparative example), and then sulfuric acid and fluorination The mixture of ammonium and hydrogen peroxide is soaked and treated at 120C for 10 minutes, where the volume ratio of (sulfuric acid + ammonium fluoride) to hydrogen peroxide is 3: 1. After the resulting processed wafer is enlarged, < see that in this single step, the photoresist and the side wall protective film formed during the etching can be completely removed, and it has no effect on the polycrystalline silicon and the underlying silicon dioxide film. . Please read the notes on the back first " fill in this page)-" The Ministry of Economic Affairs Central Standard Falcon Bureau Beigong Consumer Cooperation Du Yinzhuang 10-U: \ TYPE \ MFY \ TS.DOC 3 This paper standard is suitable for Chinese national 搮Standard (CNS > A4 specification (210X297mm)