TW238426B - Process for read only memory - Google Patents
Process for read only memoryInfo
- Publication number
- TW238426B TW238426B TW83106392A TW83106392A TW238426B TW 238426 B TW238426 B TW 238426B TW 83106392 A TW83106392 A TW 83106392A TW 83106392 A TW83106392 A TW 83106392A TW 238426 B TW238426 B TW 238426B
- Authority
- TW
- Taiwan
- Prior art keywords
- active region
- depositing
- implementing
- segregating
- overlaid
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 3
- 238000000151 deposition Methods 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 239000007943 implant Substances 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Semiconductor Memories (AREA)
Abstract
A process of coding method for read only memory with overlaid insulating layer includes: 1. implementing one buried mask on the substrate to implant ion for forming buried bit lines with gaps; 2. growing the oxide; 3. depositing segregating layer and implementing one coding mask to etch the segregating layer to form the cover on the destined active region with open circuit; 4. forming gate oxide; 5. depositing/doping/masking/etching the poly to form the word lines; By the segregating layer between the active region and word line, which is overlaid on the specific area, to make the active region keep in the open-circuit status.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW83106392A TW238426B (en) | 1994-07-14 | 1994-07-14 | Process for read only memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW83106392A TW238426B (en) | 1994-07-14 | 1994-07-14 | Process for read only memory |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW238426B true TW238426B (en) | 1995-01-11 |
Family
ID=51400741
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW83106392A TW238426B (en) | 1994-07-14 | 1994-07-14 | Process for read only memory |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW238426B (en) |
-
1994
- 1994-07-14 TW TW83106392A patent/TW238426B/en active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW366596B (en) | Thin-film transistor and the manufacturing method | |
| TW288205B (en) | Process of fabricating high-density flat cell mask read only memory | |
| TW238426B (en) | Process for read only memory | |
| KR970009617B1 (en) | Contact forming method of semiconductor device | |
| TW351859B (en) | Method for fabrication high density masked ROM | |
| TW280032B (en) | Fabrication method of self-aligned mask ROM | |
| TW245827B (en) | Process for mask read only memory | |
| TW243554B (en) | Fabricating method for mask read only memory | |
| TW242698B (en) | Process for mask ROM | |
| KR960009112B1 (en) | Method for producing dram of semiconductor device | |
| TW245830B (en) | Process for PN diode mask read only memory | |
| TW239223B (en) | Mask memory | |
| TW277162B (en) | Fuse structure for SRAM and fabrication method thereof | |
| TW262588B (en) | Coding method of mask ROM with self-alignment | |
| TW250587B (en) | Process of read only memory with etching field coding | |
| TW270237B (en) | Coding method for post-metal mask ROM planarization process | |
| TW289862B (en) | High-density mask ROM device and process thereof | |
| TW377491B (en) | Method of reducing contact impedance of contact holes | |
| JPS57113281A (en) | Manufacture of semiconductor memory device | |
| TW278250B (en) | Fabrication method of gate oxide thickness varying with different voltage and polysilicon capacitor | |
| TW275140B (en) | Manufacturing method for bit line contact windows of SRAM | |
| TW250582B (en) | Buried contact process | |
| TW231371B (en) | Post-ionizing method for mask read only memory | |
| TW264571B (en) | Read only memory and process thereof | |
| TW240338B (en) | Fabrication of flash memory |