TW202536904A - A substrate processing apparatus - Google Patents

Abstract

This invention relates to a substrate processing apparatus, which may include: a processing chamber having a processing space; a plasma generation chamber having a discharge space for generating plasma from processing gas; an adapter having a guiding space for guiding the plasma generated in the discharge space to the processing chamber; and a baffle assembly disposed between the processing space, the guiding space, or the processing space and the guiding space; and the baffle assembly may include: a baffle plate having a plurality of baffle holes providing a channel for gas to flow between the guiding space and the processing space; a connecting structure connecting the baffle plate to the processing chamber or the adapter; and a cover surrounding the connecting space where the connecting structure is located, such that the connecting structure is not exposed to the processing space.

Description

Substrate processing equipment

This invention relates to substrate processing equipment, and more specifically, to a substrate processing equipment that uses plasma to process substrates.

Plasma refers to a gaseous state composed of ions or free radicals and electrons that have been ionized. Plasma is generated by extremely high temperatures, strong electric fields, or high-frequency electromagnetic fields (RF Electromagnetic Fields). Semiconductor device manufacturing processes include ashing or etching processes that use plasma to remove thin films from a substrate. The ashing or etching process is performed by the collision or reaction between ions and/or free radical particles contained in the plasma and the thin film on the substrate.

Figure 1 illustrates an example of a remote plasma processing apparatus. Referring to Figure 1, the remote plasma processing apparatus has a plasma generation chamber 21 and a processing chamber 22. The plasma generated in the plasma generation chamber 21 flows into the processing chamber 22 through an adapter 24 and a baffle 23 to perform plasma processing on the wafer W1.

In the plasma processing apparatus of Figure 1, the baffle 23 is bolted to the processing chamber 22 or the adapter 24. However, during connection, the threads of the bolt B1, or the threads formed on the processing chamber 22 or the adapter 24 for connecting the bolt, wear down, thus generating particles T1. Furthermore, the bolt B1 is typically made of an iron-containing alloy. Therefore, in the case of oxygen-containing process gases, the surface of the bolt B1 is oxidized by oxygen plasma, thereby generating particles. These particles land on the wafer W1, causing process defects.

[The problem that the invention aims to solve]

One object of this invention is to provide a substrate processing apparatus that prevents fine debris and particles around the connecting area of the baffle plate from flowing into the substrate side.

The technical problems to be solved by this invention are not limited to those mentioned herein. As will be understood by those skilled in the art, other technical problems not mentioned can be derived from the components used in the following description and drawings.

[Technical means of solving the problem]

According to one embodiment, the substrate processing apparatus of the present invention is a substrate processor, which may include: a processing chamber having a processing space for processing the substrate; a support unit supporting the substrate in the processing space; a plasma generation chamber disposed outside the processing chamber, having a discharge space for generating plasma from the processing gas; an adapter connected to the processing chamber and the plasma generation chamber, having a guiding space for guiding the plasma generated in the discharge space to the processing chamber; and a baffle assembly. It is configured in the aforementioned processing space, the aforementioned guiding space, or between the aforementioned processing space and the aforementioned guiding space; and the aforementioned baffle assembly may include: a baffle plate having a plurality of baffle holes, the aforementioned baffle holes providing a channel for gas to flow between the aforementioned guiding space and the aforementioned processing space; a connecting structure connecting the aforementioned baffle plate to the aforementioned processing chamber or the aforementioned adapter; and a cover surrounding the connecting space where the aforementioned connecting structure is located, so that the aforementioned connecting structure is not exposed to the aforementioned processing space.

According to one embodiment, the aforementioned connecting component may include bolts.

According to one embodiment, the aforementioned baffle plate may include: a spraying area having the aforementioned baffle hole; and a connecting area located further outward than the aforementioned spraying area having a connecting hole for the aforementioned bolt to be inserted; and the aforementioned cover may have: a first area abutting against the aforementioned connecting area; and a second area abutting against the aforementioned spraying area.

According to one embodiment, the aforementioned connecting region and the aforementioned spraying region may be configured in a staggered manner, such that the aforementioned connecting region is configured higher than the aforementioned spraying region.

According to one embodiment, the aforementioned first region may abut against the outer surface of the aforementioned connecting region, and the aforementioned second region may abut against the lower surface of the aforementioned spraying region.

According to one embodiment, the aforementioned first region can be formed in a ring shape, and the aforementioned second region can be formed in a ring shape.

According to one embodiment, the aforementioned baffle assembly may further include a sealing ring inserted between the aforementioned second region and the aforementioned spray region.

According to one embodiment, the aforementioned sealing ring may be provided only between the aforementioned second region and the aforementioned spray region, and between the aforementioned first region and the aforementioned connecting region.

According to one embodiment, the aforementioned baffle assembly may further include a fixing member that fixes the aforementioned cover to the aforementioned baffle plate.

According to one embodiment, the aforementioned fixing member can fix the aforementioned first region to the aforementioned connecting region.

According to one embodiment, the aforementioned baffle assembly may be equipped with a discharge channel for discharging particles in the aforementioned connecting space to the outside of the aforementioned cover.

According to one embodiment, the aforementioned discharge channel may be formed between the aforementioned first region and the aforementioned connecting region.

According to one embodiment, the aforementioned baffle assembly may further include a guide that guides particles discharged through the aforementioned discharge channel to the edge region of the aforementioned processing space.

According to one embodiment, the aforementioned guide may be attached to the outer side of the second region of the aforementioned cover and extend to a direction further below the lower end of the aforementioned cover.

According to one embodiment, a substrate processing apparatus is provided, which processes substrates and may include: a processing chamber having a processing space for processing substrates; a support unit supporting the substrate in the processing space; a plasma generation chamber disposed outside the processing chamber and having a discharge space for generating plasma from processing gas; an adapter connected to the processing chamber and the plasma generation chamber, having a guiding space for guiding the plasma generated in the discharge space to the processing chamber; and a baffle assembly disposed between the processing space and the baffle assembly. Between the guide spaces; and the aforementioned baffle assembly may include: a baffle plate body, which includes a spray area and a connecting area, the spray area having a plurality of baffle holes forming a channel for gas flowing between the aforementioned guide space and the aforementioned processing space, the aforementioned connecting area being disposed further outward than the aforementioned spray area and having connecting holes; bolts, which connect the aforementioned baffle plate body to the aforementioned processing chamber or the aforementioned adapter through the aforementioned connecting holes; a cover, which surrounds the connecting space where the aforementioned bolt is located; and a sealing ring, which is inserted between the aforementioned cover and the aforementioned spray area.

According to one embodiment, the aforementioned connecting region and the aforementioned spraying region may be staggered, such that the aforementioned connecting region is positioned higher than the aforementioned spraying region, and the aforementioned cover may have: a first region which is coupled to the outer surface of the aforementioned connecting region; and a second region which is coupled to the lower surface of the aforementioned spraying region; and the aforementioned baffle assembly may further include: a fixing bolt which fixes the aforementioned first region to the aforementioned connecting region.

According to one embodiment, the aforementioned sealing ring may be provided only between the aforementioned second region and the aforementioned spraying region and between the aforementioned first region and the aforementioned connecting region. Between the aforementioned first region and the aforementioned connecting region, or in the aforementioned first region, a discharge channel may be provided to discharge particles in the aforementioned connecting space to the outside of the aforementioned cover.

According to one embodiment, the aforementioned baffle assembly may further include: a guide that guides particles discharged through the aforementioned discharge channel to the edge region of the aforementioned processing space; and the aforementioned guide is coupled to the outer side of the second region of the aforementioned cover and may extend to a direction further below the lower end of the aforementioned cover.

[Effects of the invention]

According to one embodiment of the present invention, fine debris and particles generated in the connecting components used to fix the baffle plate can be prevented from flowing into the substrate side.

The effects of this invention are not limited to those described above. As will be understood by those skilled in the art, other effects not mentioned can be derived from the components used in the following description and drawings.

The exemplary embodiments will be described more fully with reference to the drawings. The exemplary embodiments are provided to make the contents of this disclosure more thorough and to fully convey its scope to those skilled in the art. To provide a complete understanding of the embodiments of this disclosure, several specific details, such as particular constituent elements, apparatus, and methods, are disclosed. Those skilled in the art will understand that the exemplary embodiments can be implemented in a large number of different forms without utilizing these specific details, and neither should be construed as limiting the scope of this disclosure. In some exemplary embodiments, well-known processes, well-known equipment structures, and well-known techniques are not described in detail.

The terms used herein are used only to describe specific illustrative embodiments and are not intended to limit the illustrative embodiments. Unless the context clearly indicates otherwise, the singular or ambiguous singular/plural expressions used herein are intended to include the plural expressions. The terms "including," "comprise," "possessing," and "having" are open-ended and thus indicate the presence of the mentioned features, elements, steps, actions, elements, and/or constituent elements, without excluding the presence or supplementation of more than one other feature, element, step, action, element, constituent element, and/or combination thereof. In this specification, unless the execution order is specified, the method steps, processes, and actions shall not be construed as requiring execution in a specific order discussed or described. Furthermore, supplementary or alternative steps may be selected.

When an element or layer is referred to as "connected," "combined," "attached," "adjacent to," or "covering" another element or layer, it may be directly located on, connected to, combined with, attached to, adjacent to, or covering the aforementioned other element or layer, or there may be intermediate elements or layers. Conversely, when an element is referred to as "directly connected" or "directly combined" on another element or layer, it should be understood that there are no intermediate elements or layers. Throughout this specification, the same element symbols refer to the same element. The term "and/or" as used in this invention includes all combinations and subcombinations of more than one of the listed items.

The terms "first," "second," and "third," etc., may be used in this invention to describe various elements, regions, layers, and/or parts, but should not be construed as limiting these elements, regions, layers, and/or parts to these terms. These terms are used only to distinguish one element, region, layer, or part from other elements, regions, layers, or parts. Therefore, the first element, first region, first layer, or first part discussed below may be referred to as a second element, second region, second layer, or second part without departing from the idea of the illustrative embodiment.

Spatial relative terms (e.g., "below," "under," "lower part," "above," "upper end," etc.) are used, for ease of explanation, to describe the relationship between one element or feature and other elements or features. Spatial relative terms should be understood not only as the arrangement direction shown in the figure, but also as other arrangement directions of the equipment in use or operation. For example, if the aforementioned equipment in the figure is flipped, the element described as "below" or "under" of another element or feature will be arranged "above" of that other element or feature. Therefore, the aforementioned term "below" can encompass both the arrangement directions above and below. The aforementioned equipment can be arranged differently (rotated 90 degrees or arranged in other directions), and the spatial relative descriptive phrases used in this invention can be interpreted accordingly.

It should be understood that in the description of the embodiments, there may be some inaccuracies in the use of the terms "same" or "identical". Therefore, when it is mentioned that one element or value is the same as another element or value, it should be understood that the corresponding element or value is the same as another element or value within the manufacturing or operational error (e.g., 10%).

In this specification, when the terms "approximately" or "substantially" are used with respect to numerical values, it should be understood that the corresponding numerical values include manufacturing or operational errors (e.g., 10%). Additionally, it should be understood that, with respect to geometric forms, while the terms "generally" and "substantially" are not required to be precise, the degrees of latitude of the form are within a publicly available range.

Unless otherwise defined, all terms used in this invention (including technical and scientific terms) shall have the same meaning as commonly understood by a person of ordinary skill in the art to which the exemplary embodiments pertain. Furthermore, it should be understood that terms, including those defined in commonly used dictionaries, shall be interpreted as having a meaning consistent with their meaning in the context of the relevant art, and shall not be interpreted as having an idealized or overly formal meaning unless expressly defined in this invention.

In this embodiment, a wafer is used as an example to illustrate the object to be processed. However, the technical concept of this invention can also be applied to equipment used for processing other types of substrates besides wafers.

Figure 2 is a cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention.

Referring to Figure 2, the substrate processing apparatus according to an embodiment of the present invention includes a plasma generation unit 100, an adapter 200, and a process processing unit 300.

The plasma generating unit 100 may be located in the upper part of the processing chamber 310. The plasma generating unit 100 discharges the processing gas to generate plasma and supplies the generated plasma to the processing space 301. The plasma may contain ion or free radical particles for ashing or etching processes.

The plasma generating unit 100 may include a plasma generating chamber 110, a gas supply unit 120, a power supply 130, and an antenna 140.

The plasma generation chamber 110 may have plasma generation spaces 101 that are open at the top and bottom. The plasma generation chamber 110 may be formed of a ceramic material. For example, the plasma generation chamber 110 may be formed of an insulating material such as quartz or _alumina ( _Al₂O₃ ). The top of the plasma generation chamber 110 may be sealed by a gas supply port 114. Processing gas may be supplied to the plasma generation space 101 through the gas supply port 114. The gas supplied to the plasma generation space 101 may flow into the processing space 301 through the baffle assembly 350.

Gas supply unit 120 can supply treatment gas. Gas supply unit 120 can be connected to gas supply port 114. The treatment gas supplied by gas supply unit 120 can be a gas containing fluorine and/or hydrogen.

Power source 130 can supply power to antenna 140. Power source 130 can supply high-frequency alternating current to antenna 140. The high-frequency alternating current supplied to antenna 140 can create an induced electric field in plasma generation space 101. The processing gas in plasma generation space 101 can obtain the energy required for ionization from the induced electric field and be converted into a plasma state.

Antenna 140 is configured to surround plasma generation chamber 110 from a height corresponding to the upper end of plasma generation chamber 110 to a height corresponding to the lower end. The upper end of antenna 140 is connected to power supply 130, and the lower end of antenna 140 is grounded.

Adapter 200 can be disposed in the lower part of plasma generation chamber 110 and processing chamber 310. Adapter 200 allows plasma generated in plasma generation chamber 110 to diffuse into processing space 301. Furthermore, adapter 200 can have guiding space 201. Guiding space 201 is configured to be open at the top and bottom. Adapter 200 can have an inverted funnel shape. The upper end of adapter 200 can have a diameter corresponding to that of plasma generation chamber 110. The lower end of adapter 200 can have a diameter greater than that of the upper end of adapter 200.

The process processing unit 300 provides a processing space 301 for processing the substrate W. The plasma generated by the plasma generation unit 100 is supplied to the processing space 301 of the process processing unit 300.

The process handling unit 300 may include a processing chamber 310, a support unit 320, an exhaust unit 330, and a baffle assembly 350.

A processing space 301 is provided inside the processing chamber 310. The processing space 301 is open at the top. A substrate inlet/outlet (not shown) may be formed on the side wall of the processing chamber 310. The substrate inlet/outlet can be opened and closed by a door (not shown). Furthermore, an exhaust hole 314 is formed on the bottom surface of the processing chamber 310. The exhaust hole 314 can discharge the processing gas and/or byproducts in the processing space 301 to the outside of the processing space 301. An exhaust pipe 331 is connected to the exhaust hole 314, and a pressure reducing pump may be installed on the exhaust pipe 331.

The support unit 320 supports the substrate W in the processing space 301. According to one example, the support unit 320 may include a support plate 321 for placing the substrate W and a support shaft 322 for supporting it. The support plate 321 may be configured to fix the substrate W using electrostatic force. Alternatively, the support plate 321 may be configured to fix the substrate W using vacuum pressure. An exhaust baffle 323 may be further provided on the outer side of the support plate 321. The exhaust baffle 323 can provide uniform exhaust airflow throughout the entire processing chamber.

The exhaust unit 330 includes an exhaust pipe 331 and a pressure reducing pump. The pressure reducing pump is installed on the exhaust pipe, and the exhaust pipe 331 is connected to the exhaust port 314. The exhaust unit 330 discharges the processing gas and/or reaction byproducts generated during the substrate processing that are retained inside the process processing unit 300 to the outside, and maintains the pressure inside the process processing unit 300 at a set pressure.

The baffle assembly is explained in more detail below with reference to Figures 3 to 5.

Figure 3 is an enlarged view of area "A" in Figure 2. Figure 4 is a cross-sectional view of the baffle assembly in Figure 2 in an exploded state. Figure 5 is a three-dimensional view of the baffle plate viewed from below.

Referring to Figures 3 to 5, the baffle assembly 350 is positioned above the support unit 320, facing it. The baffle assembly 350 can be disposed between the support unit 320 and the plasma generating unit 100. For example, the baffle assembly 350 can be disposed between the processing space 301 and the guiding space 201. Alternatively, the baffle assembly 350 can be located in both the processing space 301 and the guiding space 201. Plasma generated by the plasma generating unit 100 can flow into the processing space 301 through the baffle assembly 350.

The baffle assembly 350 may include a baffle plate 351, a connecting component 352, a cover 353, and a sealing ring 355.

According to one example, the baffle plate 351 can be coupled to the adapter 200.

The baffle plate 351 may have a spray area 351a and a connecting area 351b.

The spraying zone 351a is a plate with a predetermined thickness. The spraying zone 351a can be generally formed in a circular plate shape. Multiple baffle holes 351e are formed in the spraying zone 351a. The baffle holes 351e are through holes extending from the top to the bottom of the baffle plate 351. Plasma can flow from the guide space 201 into the processing space 301 through the baffle holes 351e. The baffle holes 351e can have different diameters.

The connecting region 351b is located further out than the spraying region 351a. The connecting region 351b may be annular. The connecting region 351b and the spraying region 351a may be staggered. The connecting region 351b may be configured to be higher than the spraying region 351a. A connecting hole 351b1 is formed in the connecting region 351b. A screw hole 201a is formed in the adapter 200 at a position corresponding to the connecting hole 351b1.

The connecting component 352 secures the baffle plate 351 to the adapter 200. As an example, the connecting component 352 may be a bolt.

The connecting member 352 is inserted into the connecting hole 351b1 of the baffle plate 351 and the screw hole 201a of the adapter 200. The connecting member 352 has a head portion 352a and a threaded portion 352b. The connecting member 352 is inserted into the connecting hole 351b1 of the baffle plate 351 and the screw hole 201a of the adapter 200 in an upward direction with the head portion 352a located below the threaded portion 352b. The area where the head portion 352a of the connecting member 352 is located is referred to as the connecting space 351b2. For example, in Figure 3, the connecting space 351b2 can be an area that is adjacent to both the connecting area 351b of the baffle plate 351 and the spraying area 351a of the baffle plate 351.

The cover 353 is provided in such a way that it surrounds the connecting space 351b2, so that the connecting component 352 is not exposed to the processing space 301. The cover 353 is annular.

The cover 353 may include a first region 353a and a second region 353b.

The first region 353a may be generally annular. The first region 353a may be provided as a side of the cover. The first region 353a is arranged facing the outer side of the connecting region 351b. The first region 353a may be configured to abut against the outer side of the connecting region 351b.

The second region 353b may be generally annular. The second region 353b may be provided as the bottom of the cover 353. The first region 353a is arranged facing the lower edge region of the spray region 351a. The second region 353b may be configured to abut against the lower surface of the spray region 351a.

The cover 353 can be fixed to the baffle plate 351 by means of a fixing member 354. The fixing member 354 can be a screw. The fixing member 354 can fix the first region 353a to the connecting region 351b. Screw holes 353d are formed on the side of the connecting region 351b of the baffle plate 351 and the first region 353a of the cover 353. The fixing member 354 can be inserted into the screw holes 353d formed on the connecting region 351b of the baffle plate 351 and the first region 353a of the cover 353.

A sealing ring 355 may be provided between the cover 353 and the baffle plate 351. The sealing ring 355 may be made of a resin material such as Teflon.

A sealing ring 355 can be inserted between the second region 353b and the spray region 351a. The sealing ring 355 can be configured as an annular shape. A sealing groove 353f for inserting the sealing ring 355 can be formed on the first region 353a of the cover 353. The sealing ring 355 can be configured only between the second region 353b and the spray region 351a, and between the first region 353a and the connecting region 351b.

Figure 6 is a diagram showing the movement path of the particles in Figure 3.

Referring further to Figure 6, a gap may be provided between the first region 353a and the connecting region 351b. The aforementioned gap can function as an exhaust channel G1 for discharging particles P1. When the baffle plate 351 is fixed to the adapter 200 by screwing it into the connecting member 352, particles P1 will fall off the threads. Thanks to the cover 353, these particles P1 do not fall into the processing space 301, but remain in the connecting space 351b2. Furthermore, the space between the spraying region 351a of the baffle plate 351 and the cover 353 is sealed by the sealing ring 355, thus completely preventing particles P1 from flowing into the central region of the processing space 301 through the space between the spraying region 351a of the baffle plate 351 and the cover 353. Furthermore, thanks to the discharge channel G1, which functions as a gap, provided between the first region 353a and the connecting region 351b, particles P1 within the connecting space 351b2 can be discharged to the edge region of the processing space 301. Particles P1 discharged to the edge region of the processing space 301 do not flow towards the central region of the processing space 301, but are instead discharged to the outside through the exhaust baffle 323 located vertically below it.

On the other hand, as shown in FIG7, the substrate processing apparatus of another embodiment of the present invention may be further equipped with a discharge channel G1 in the baffle assembly 350 for discharging fine debris and particles P1.

The discharge channel G1 is a channel that guides the fine particles P1 within the connecting space 351b2 to the outside of the cover 353. The discharge channel G1 can be configured to pass through the first region 353a and the connecting region 351b. The discharge channel G1 can be positioned above the connecting space 351b2. In this case, no sealing ring 355 is provided between the first region 353a and the connecting region 351b to discharge particles P1.

The fine particles P1 within the connecting space 351b2 can be discharged through the discharge channel G1 to the outside of the cover 353, then fall to the side of the vent 314 and be discharged. At this time, the particles P1 remaining in the connecting space 351b2 are continuously discharged through the discharge channel G1. Therefore, most of the particles P1 generated by the grinding of the connecting component 352 are discharged after a certain point in time, thus preventing the substrate W from being poorly processed.

Furthermore, in a substrate processing apparatus of an embodiment of the present invention, the baffle assembly 350 may further include a guide 365.

The guide body 365 may be cylindrical. The guide body 365 is disposed on the outer side of the cover 353 and is configured not to cover the discharge passage G1. The lower surface of the guide body 365 may extend to a height lower than the lower surface of the cover 353.

This guide 365, by forming an induction space H1 between the discharge channel G1 and the processing chamber 310, guides the particles P1 discharged from the discharge channel G1 to the exhaust port 314. Therefore, the guide 365 can smoothly discharge the particles P1 while preventing them from flowing into the substrate W side.

Furthermore, the substrate processing apparatus of the present invention can be modified into various substrate processing apparatus embodiments as follows.

First, as shown in Figure 8, the discharge channel G1 can be configured as a through hole in the first region 353a of the through cover 353. Also, as shown in Figure 9, the connecting space 351b2 of the baffle plate 351 can be configured as a hole. Furthermore, as shown in Figure 10, the baffle plate 351 can be configured as a flat plate. In this case, the second region 353b of the cover 353 can form the connecting space 351b2, and is configured to surround the head 352a of the connecting member 352. Also, as shown in Figure 11, a sealing ring 355 may not be formed between the baffle plate 351 and the cover 353. Furthermore, as shown in Figure 12, a sealing ring 355 may be provided not only between the spray area 351a and the second area 353b, but also between the first area 353a and the connecting area 351b.

As described above, the present invention has been described with reference to specific matters and limited embodiments and drawings, such as specific constituent elements, but this is only provided to help to understand the present invention more fully, and is not limited to the aforementioned embodiments. Anyone skilled in the art to which the present invention pertains can make various modifications and variations from such description.

Therefore, the ideas of this invention are not limited to the embodiments described herein, and all contents that are equivalent to or modified from the scope of the patent application described below are within the scope of the ideas of this invention.

21: Plasma generation chamber 22: Processing chamber 23: Baffle 24: Adapter 100: Plasma generation section 101: Plasma generation space 110: Plasma generation chamber 114: Gas supply port 120: Gas supply unit 130: Power supply 140: Antenna 200: Adapter 201: Guide space 201a: Screw hole 300: Processing section 301: Processing space 310: Processing chamber 314: Vent 320: Support unit 321: Support plate 322: Support shaft 323: Vent baffle 330: Vent section 331: Vent pipe 350: Baffle assembly; 351: Baffle plate body; 351a: Spraying area; 351b: Connecting area; 351e: Baffle hole; 351b1: Connecting hole; 351b2: Connecting space; 352: Connecting component; 352a: Head; 352b: Threaded part; 353: Cover; 353a: First area; 353b: Second area; 353d: Threaded hole; 353f: Sealing groove; 354: Fixing component; 355: Sealing ring; 365: Guide body; B1: Bolt; G1: Discharge channel; H1: Induction space; P1: Particle; T1: Particle; W1: Wafer; W: Substrate

The various features and advantages of the non-limiting embodiments of this specification will become clearer when examined in conjunction with the drawings. The drawings are provided for illustrative purposes only and should not be construed as limiting the scope of the invention application. Unless explicitly stated otherwise, the drawings should not be considered as drawn to scale. For clarity, various dimensions in the drawings may be exaggerated.

Figure 1 is an example diagram illustrating a remote plasma processing device.

Figure 2 is a simplified cross-sectional view illustrating an embodiment of the substrate processing apparatus of the present invention.

Figure 3 is an enlarged view of area "A" in Figure 2.

Figure 4 is a cross-sectional view of the baffle assembly in Figure 2 in its exploded state.

Figure 5 is a three-dimensional view of the baffle plate as viewed from below.

Figure 6 is a diagram showing the movement path of the particles in Figure 4.

Figures 7 to 12 are diagrams of a substrate processing apparatus according to another embodiment of the present invention.

200: Adapter

301: Processing Space

351: Baffle plate body

352: Connecting Components

353: Cover

354: Fixed Components

355: Sealing ring

201a: Threaded Hole

351a: Spraying area

351b: Linked Areas

351b1: Connecting hole

351b2: Link Space

352a: Head

352b: Threaded section

353a: First Region

353b: Second Region

G1: Discharge Channel

Claims (18)

A substrate processing apparatus is used to process substrates. The substrate processing apparatus includes: a processing chamber having a processing space for processing substrates; a support unit supporting the substrate in the processing space; a plasma generation chamber disposed outside the processing chamber and having a discharge space for generating plasma from processing gas; an adapter connected to the processing chamber and the plasma generation chamber, having a guiding space for guiding the plasma generated in the discharge space to the processing chamber; and a baffle assembly. The baffle assembly is configured in the aforementioned processing space, the aforementioned guiding space, or between the aforementioned processing space and the aforementioned guiding space; and the aforementioned baffle assembly includes: a baffle plate having a plurality of baffle holes, the aforementioned baffle holes providing a channel for gas to flow between the aforementioned guiding space and the aforementioned processing space; a connecting member connecting the aforementioned baffle plate to the aforementioned processing chamber or the aforementioned adapter; and a cover surrounding the connecting space where the aforementioned connecting member is located, such that the aforementioned connecting member is not exposed to the aforementioned processing space. The substrate processing apparatus as described in claim 1, wherein the aforementioned connecting structure includes bolts. The substrate processing apparatus as described in claim 2, wherein the aforementioned baffle plate includes: a spraying area having the aforementioned baffle hole; and a connecting area located further outward than the aforementioned spraying area having a connecting hole for the aforementioned bolt to be inserted; and the aforementioned cover has: a first area abutting against the aforementioned connecting area; and a second area abutting against the aforementioned spraying area. The substrate processing apparatus as described in claim 3, wherein the aforementioned connecting region and the aforementioned spraying region are misaligned, such that the aforementioned connecting region is configured higher than the aforementioned spraying region. The substrate processing apparatus as described in claim 3 or 4, wherein the aforementioned first region abuts against the outer surface of the aforementioned connecting region, and the aforementioned second region abuts against the lower surface of the aforementioned spraying region. The substrate processing apparatus as described in claim 3 or 4, wherein the aforementioned first region is formed in a ring shape and the aforementioned second region is formed in a ring shape. The substrate processing apparatus as described in claim 3 or 4, wherein the aforementioned baffle assembly further includes a sealing ring inserted between the aforementioned second region and the aforementioned spraying region. The substrate processing apparatus as described in claim 7, wherein the aforementioned sealing ring is provided only between the aforementioned second region and the aforementioned spraying region and between the aforementioned first region and the aforementioned connecting region. The substrate processing apparatus as described in claim 3 or 4, wherein the aforementioned baffle assembly further includes: a fixing member that fixes the aforementioned cover to the aforementioned baffle plate. The substrate processing apparatus as described in claim 9, wherein the aforementioned fixing member fixes the aforementioned first region to the aforementioned connecting region. The substrate processing apparatus as described in claim 3, wherein the aforementioned baffle assembly is provided with a discharge channel for discharging particles in the aforementioned connecting space to the outside of the aforementioned cover. The substrate processing apparatus as described in claim 11, wherein the aforementioned discharge channel is formed between the aforementioned first region and the aforementioned connecting region. The substrate processing apparatus as described in claim 11, wherein the aforementioned baffle assembly further includes: a guide that guides particles discharged through the aforementioned discharge channel to the edge region of the aforementioned processing space. The substrate processing apparatus as described in claim 13, wherein the aforementioned guide is coupled to the outer side of the aforementioned second region of the aforementioned cover and extends in a direction further below the lower end of the aforementioned cover. A substrate processing apparatus is used to process a substrate. The substrate processing apparatus includes: a processing chamber having a processing space for processing the substrate; a support unit supporting the substrate in the processing space; a plasma generation chamber disposed outside the processing chamber and having a discharge space for generating plasma from a processing gas; an adapter connected to the processing chamber and the plasma generation chamber, having a guiding space for guiding the plasma generated in the discharge space to the processing chamber; and a baffle assembly disposed in the processing space and the guiding space. Between spaces; and the aforementioned baffle assembly includes: a baffle plate body, which includes a spray area and a connecting area, the spray area having a plurality of baffle holes forming a channel for gas flowing between the aforementioned guide space and the aforementioned processing space, the aforementioned connecting area being disposed further outward than the aforementioned spray area and having a connecting hole; a bolt, which connects the aforementioned baffle plate body to the aforementioned processing chamber or the aforementioned adapter through the aforementioned connecting hole; a cover, which surrounds the connecting space where the aforementioned bolt is located; and a sealing ring, which is inserted between the aforementioned cover and the aforementioned spray area. The substrate processing apparatus as described in claim 15, wherein the aforementioned connecting region and the aforementioned spraying region are configured in a staggered manner such that the aforementioned connecting region is configured higher than the aforementioned spraying region, and the aforementioned cover has: a first region which is coupled to the outer surface of the aforementioned connecting region; and a second region which is coupled to the lower surface of the aforementioned spraying region; and the aforementioned baffle assembly further includes: a fixing bolt which fixes the aforementioned first region to the aforementioned connecting region. The substrate processing apparatus as described in claim 16, wherein the aforementioned sealing ring is provided only between the aforementioned second region and the aforementioned spraying region and between the aforementioned first region and the aforementioned connecting region, and a discharge channel is provided between the aforementioned first region and the aforementioned connecting region, or in the aforementioned first region, to discharge particles in the aforementioned connecting space to the outside of the aforementioned cover. The substrate processing apparatus as described in claim 17, wherein the aforementioned baffle assembly further includes: a guide that guides particles discharged through the aforementioned discharge channel to the edge region of the aforementioned processing space; and the aforementioned guide is coupled to the outer side of the aforementioned second region of the aforementioned cover and extends to a direction further below the lower end of the aforementioned cover.