TW202534409A - Laser-protection variable transmission optical device - Google Patents
Laser-protection variable transmission optical deviceInfo
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- TW202534409A TW202534409A TW113142979A TW113142979A TW202534409A TW 202534409 A TW202534409 A TW 202534409A TW 113142979 A TW113142979 A TW 113142979A TW 113142979 A TW113142979 A TW 113142979A TW 202534409 A TW202534409 A TW 202534409A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1347—Arrangement of liquid crystal layers or cells in which the final condition of one light beam is achieved by the addition of the effects of two or more layers or cells
- G02F1/13475—Arrangement of liquid crystal layers or cells in which the final condition of one light beam is achieved by the addition of the effects of two or more layers or cells in which at least one liquid crystal cell or layer is doped with a pleochroic dye, e.g. GH-LC cell
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1347—Arrangement of liquid crystal layers or cells in which the final condition of one light beam is achieved by the addition of the effects of two or more layers or cells
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/137—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering
- G02F1/13725—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering based on guest-host interaction
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- E—FIXED CONSTRUCTIONS
- E06—DOORS, WINDOWS, SHUTTERS, OR ROLLER BLINDS IN GENERAL; LADDERS
- E06B—FIXED OR MOVABLE CLOSURES FOR OPENINGS IN BUILDINGS, VEHICLES, FENCES OR LIKE ENCLOSURES IN GENERAL, e.g. DOORS, WINDOWS, BLINDS, GATES
- E06B9/00—Screening or protective devices for wall or similar openings, with or without operating or securing mechanisms; Closures of similar construction
- E06B9/24—Screens or other constructions affording protection against light, especially against sunshine; Similar screens for privacy or appearance; Slat blinds
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Liquid Crystal (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
Description
本揭示係關於光學裝置,特定言之,可在清透狀態與暗化狀態之間可逆切換以尤其阻擋諸如雷射光之窄帶輻射的可變透射光學裝置。The present disclosure relates to optical devices, and more particularly, to variable transmission optical devices that can be reversibly switched between a clear state and a darkened state to block, inter alia, narrowband radiation such as laser light.
可在高透射「清透」狀態與低透射「黑暗」狀態之間快速改變的可變透射光學裝置(「VTOD」)(例如,眼鏡、護目鏡、遮陽板、窗、感測器、濾光器、攝影機或其類似者)與固定透射光學裝置相比具有許多優勢。特別有用之特徵為按需要進行此快速改變之能力,無論係手動地(在使用者觸摸按鈕時)抑或自動地(在光感測器及電子電路之控制下)。Variable transmission optical devices ("VTODs") (e.g., glasses, goggles, visors, windows, sensors, filters, cameras, or the like) that can rapidly change between a high-transmission "clear" state and a low-transmission "dark" state offer many advantages over fixed-transmission optical devices. A particularly useful feature is the ability to perform this rapid change on demand, either manually (at the touch of a button by the user) or automatically (under the control of a light sensor and electronic circuitry).
光學裝置可潛在地提供對強光(例如,諸如雷射之窄光束光源)之防護。舉例而言,軍隊、警察、急救人員、飛行員及其他人可能面臨由敵方人員或裝置發射之雷射光的威脅。防禦雷射光存在困難,且迄今為止之解決方案在很大程度上並不令人滿意。舉例而言,一種常見方法(針對綠光雷射)係簡單地在面罩之頂部部分處設置靜態綠光吸收條帶。此僅提供對綠光雷射之防護,且僅在佩戴該條帶之人員的頭部角度合適之情況下才能提供防護。此外,無論威脅存不存在,系統都將繼續阻擋光譜之彼區域。此可導致顏色失真,從而並不滿足供一般使用之光學要求。在飛行員之情況下,阻擋綠光雷射之靜態著色膜為不合乎需要的,因為其亦可使飛行員視覺變暗且濾除駕駛艙顯示,且另外削弱飛行員正確看到之精確進場路線指示燈(Precision Approach Path Indicator;PAPI)或目視進場下滑指示燈(Visual Approach Slope Indicator;VASI)光之能力,此需要紅色/白色或紅色/綠色辨別。Optical devices can potentially provide protection against intense light, such as narrow-beam light sources like lasers. For example, the military, police, emergency personnel, pilots, and others may face the threat of laser light emitted by enemy personnel or devices. Protecting against laser light is difficult, and solutions to date have been largely unsatisfactory. For example, one common approach (for green lasers) is to simply place a static green-light absorbing strip on the top portion of the visor. This only provides protection against green lasers, and only if the head of the person wearing the strip is angled correctly. Furthermore, the system will continue to block that area of the light spectrum regardless of whether the threat is present or not. This can result in color distortion and thus does not meet optical requirements for general use. In the case of pilots, a static tint that blocks the green laser is undesirable because it can also dim the pilot's vision and filter cockpit displays, and further impair the pilot's ability to correctly see the Precision Approach Path Indicator (PAPI) or Visual Approach Slope Indicator (VASI) lights, which require red/white or red/green discrimination.
可變透射光學裝置亦可提供對強光之某種防護。然而,難以將此等裝置調配成具有足夠光密度而用於對雷射有令人滿意的防護。對於一些應用,重要的係,通過光學裝置看到之場景不會在該裝置在清透狀態與各種暗化狀態之間移動時被遮擋。為了達到足夠光密度以抵禦雷射(例如,在雷射波長具有1或更大之光密度「OD」),場景在雷射以外之波長區域中整體上變得難以接受的昏暗。Variable transmission optics can also provide some protection against glare. However, it can be difficult to configure these devices to have sufficient optical density for satisfactory protection against lasers. For some applications, it is important that the scene viewed through the optics is not obscured as the device moves between its clear and various dimmed states. To achieve sufficient optical density to protect against lasers (e.g., an optical density (OD) of 1 or greater at the laser wavelength), the scene becomes unacceptably dark overall in wavelengths outside the laser's range.
因此,需要提供一種可變透射光學系統(例如,濾光器、透鏡、護目鏡、遮陽板、面罩、窗、擋風玻璃、AR或VR眼鏡或其類似者),其可抵禦強窄帶光,同時維持除雷射光以外的足夠光透射光譜區域。Therefore, it is desirable to provide a variable transmission optical system (e.g., a filter, lens, goggles, visor, mask, window, windshield, AR or VR glasses, or the like) that can resist strong narrowband light while maintaining sufficient transmission of a spectral region of light other than laser light.
根據一些實施例,雷射保護可變透射光學裝置(「LP-VTOD」)包括第一單元及第二單元。第一單元包括提供於第一對基板之間的第一電光材料。在施加於第一電光材料上之第一電場之改變後,第一電光材料能夠在第一波長區域中自較高透光率狀態改變為較低透光率狀態。第一單元之特徵在於具有第一峰值吸收波長及第一半高全寬(FWHM)為175奈米或更小的窄帶吸收。第二單元與第一單元光通信,且第二單元包括提供於第二對基板之間的第二電光材料。在施加於第二電光材料上之第二電場之改變後,第二電光材料能夠在第二波長區域中自較高透光率狀態改變為較低透光率狀態。第二單元之特徵在於具有第二峰值吸收波長及第二半高全寬(FWHM)為175奈米或更小的窄帶吸收。第一峰值吸收波長及第二峰值吸收波長可相同或不同。在一些情況下,第二峰值吸收波長可與第一峰值吸收波長相差5%以內。對於穿過LP-VTOD之光,LP-VTOD能夠自清透狀態切換至暗化狀態,對於第一峰值吸收波長或第二峰值吸收波長中之至少一者,該暗化狀態具有等於或小於10%之暗化狀態透射率%T DS-P。 According to some embodiments, a laser protected variable transmission optical device ("LP-VTOD") includes a first unit and a second unit. The first unit includes a first electro-optical material provided between a first pair of substrates. The first electro-optical material is capable of changing from a higher transmittance state to a lower transmittance state in a first wavelength region upon a change in a first electric field applied to the first electro-optical material. The first unit is characterized by having a narrowband absorption having a first peak absorption wavelength and a first full width at half maximum (FWHM) of 175 nanometers or less. The second unit is in optical communication with the first unit, and the second unit includes a second electro-optical material provided between a second pair of substrates. The second electro-optical material is capable of changing from a higher transmittance state to a lower transmittance state in a second wavelength region upon a change in a second electric field applied to the second electro-optical material. The second unit is characterized by having a narrowband absorption having a second peak absorption wavelength and a second full width at half maximum (FWHM) of 175 nm or less. The first peak absorption wavelength and the second peak absorption wavelength may be the same or different. In some cases, the second peak absorption wavelength may be within 5% of the first peak absorption wavelength. With respect to light passing through the LP-VTOD, the LP-VTOD is capable of switching from a clear state to a darkened state, wherein the darkened state has a darkened state transmittance %T DS-P equal to or less than 10% for at least one of the first peak absorption wavelength or the second peak absorption wavelength.
相關申請案之交叉參考本申請案主張2023年11月9日申請之名稱為「雷射保護可變透射光學裝置(LASER-PROTECTION VARIABLE TRANSMISSION OPTICAL DEVICE)」的美國非臨時專利申請案18/505,144之優先權及任何其他權益,該專利申請案之全部揭示內容以引用之方式充分併入本文中。 CROSS-REFERENCE TO RELATED APPLICATIONS This application claims priority to and any other benefits of U.S. nonprovisional patent application No. 18/505,144, filed on November 9, 2023, entitled “LASER-PROTECTION VARIABLE TRANSMISSION OPTICAL DEVICE,” the entire disclosure of which is fully incorporated herein by reference.
應理解,實施例包括各種態樣,其可以不同方式組合。提供以下描述以列舉部件且描述本申請案之一些實施例。此等部件利用特定實施例列舉;然而,應理解,其可以任何方式及任何數目組合以創建額外實施例。不同描述之實例及實施例不應解釋為將本申請案之實施例僅限於明確描述之系統、技術及應用。應理解,圖式是出於說明本揭示之概念的目的且可不按比例繪製。It should be understood that the embodiments include various aspects that can be combined in different ways. The following description is provided to list components and describe some embodiments of the present application. These components are listed using specific embodiments; however, it should be understood that they can be combined in any manner and in any number to create additional embodiments. The various described examples and embodiments should not be interpreted as limiting the embodiments of the present application to only the systems, techniques, and applications explicitly described. It should be understood that the drawings are for the purpose of illustrating the concepts of the present disclosure and may not be drawn to scale.
術語「約」及「大致」可用於包括可在不改變彼值之基本功能之情況下變化的任何數值。當以一範圍使用時,「約」及「大致」亦揭示由兩個端點之絕對值界定的範圍,例如「約2至約4」亦揭示「2至4」之範圍。The terms "about" and "substantially" may be used to include any value that may vary without changing the basic function of that value. When used in the context of a range, "about" and "substantially" also disclose the range defined by the absolute values of the two endpoints, for example, "about 2 to about 4" also discloses the range of "2 to 4".
如本說明書及申請專利範圍中所使用,如本文中所使用之術語「包含(comprise/comprises)」、「包括(include/includes)」、「具有(having)」、「具有(has)」、「可」、「含有(contain/contains)」及其變化形式意欲為開放式過渡片語、術語或字組,其要求存在所命名之成分、組分或步驟且准許存在其他成分、組分或步驟。As used in this specification and claims, the terms "comprise/comprises," "include/includes," "having," "has," "may," "contain/contains," and variations thereof as used herein are intended to be open transition phrases, terms, or words that require the presence of named elements, components, or steps and permit the presence of additional elements, components, or steps.
本揭示可包括以下術語中之一者或多者,該等術語之含義可如下文所描述。The present disclosure may include one or more of the following terms, the meanings of which may be as described below.
如本文中所使用之「吸收」可定義由混合物、單元或光學裝置吸收之光的百分比。As used herein, "absorption" may define the percentage of light absorbed by a mixture, cell, or optical device.
「吸收帶」可定義發生吸收之光譜波長。An "absorption band" defines the wavelength in the optical spectrum where absorption occurs.
如本文中所使用之「清透狀態」或「清透狀態透射」可指LP-VTOD展現高或最大透光率狀態。As used herein, "clear state" or "clear state transmission" may refer to a state in which the LP-VTOD exhibits high or maximum light transmittance.
「暗化狀態」或「暗化狀態透射」可指VTOD展現相對於清透狀態減小之透光率的狀態。"Darkened state" or "darkened state transmission" may refer to a state in which the VTOD exhibits reduced light transmittance relative to the clear state.
「二色性染料」或「DC染料」為光吸收染料部分(moiety),其通常具有棒狀形狀且顯示唯一異向性,其中其光吸收性質平行(α ∥)及垂直(α ⊥)於分子而發生,此之特徵在於二色性比率(dichroic ratio) DR= α ∥/ α ⊥。具有二色性比率(DR)之任何分子均為展現「二色性」之分子。 A "dichroic dye," or "DC dye," is a light-absorbing dye moiety that typically has a rod-like shape and exhibits unique anisotropy, with its light absorption properties occurring parallel ( α∥ ) and perpendicular ( α⊥ ) to the molecule. This is characterized by a dichroic ratio (DR) = α∥ / α⊥ . Any molecule with a dichroic ratio (DR) is considered "dichroic."
「染料有序參數」或「S dye」係指各二色性染料之躍遷偶極相對於指向矢的有序參數。 The "dye order parameter" or "S dye " refers to the order parameter of the transition dipole of each dichroic dye with respect to the director.
染料混合物之「二色性比率」或 D mix 係指可含有一種或多種DC染料之客體-主體混合物在該混合物或染料(在適用時)之峰值吸收波長下之二色性比率。 The "dichroic ratio" of a dye mixture, or Dmix, refers to the dichroic ratio of a guest-host mixture, which may contain one or more DC dyes, at the peak absorption wavelength of the mixture or dye, as applicable.
如本文中所使用之「窄帶吸收」被定義為具有半高全寬(FWHM)小於或等於175 nm,或替代地小於或等於165 nm、155 nm、120 nm、100 nm、80 nm、70 nm、60 nm、50 nm、40 nm、30 nm、20 nm或10 nm之光譜吸收帶寬,其中整個光譜吸收帶通常係在400至700 nm,或替代地380 nm至780 nm之可見區域內所量測。窄帶吸收可在一些情況下具有高色彩色度。As used herein, "narrowband absorption" is defined as having a spectral absorption bandwidth having a full width at half maximum (FWHM) less than or equal to 175 nm, or alternatively less than or equal to 165 nm, 155 nm, 120 nm, 100 nm, 80 nm, 70 nm, 60 nm, 50 nm, 40 nm, 30 nm, 20 nm, or 10 nm, wherein the entire spectral absorption band is typically measured in the visible region of 400 to 700 nm, or alternatively, 380 nm to 780 nm. Narrowband absorption can, in some cases, have high color chromaticity.
「超窄帶吸收」為「窄帶吸收之子集」且如本文中所使用被定義為具有FWHM小於或等於88 nm,或替代地小於或等於80 nm、70 nm、60 nm、50 nm、40 nm、30 nm、20 nm或10 nm或更小之光譜吸收帶寬,其中整個光譜吸收帶通常係在400 nm至700 nm,或替代地380 nm至780 nm之可見區域內所量測。超窄帶吸收可在一些情況下具有高色彩色度。"Ultra-narrowband absorption" is a subset of "narrowband absorption" and, as used herein, is defined as having a spectral absorption bandwidth of less than or equal to 88 nm, or alternatively less than or equal to 80 nm, 70 nm, 60 nm, 50 nm, 40 nm, 30 nm, 20 nm, or 10 nm or less, with the entire spectral absorption band typically measured in the visible region of 400 nm to 700 nm, or alternatively, 380 nm to 780 nm. Ultra-narrowband absorption can, in some cases, have high color chromaticity.
「窄帶混合物」係指可用於窄帶單元以產生窄帶吸收(其可視情況為超窄帶吸收)之客體-主體液晶混合物(超窄帶混合物)。A "narrowband mixture" refers to a guest-host liquid crystal mixture (ultra-narrowband mixture) that can be used in a narrowband cell to produce narrowband absorption (which may be ultra-narrowband absorption).
「窄帶單元」係指能夠產生窄帶吸收(其可視情況為超窄帶吸收)之裝置。A "narrowband unit" refers to a device that can produce narrowband absorption (which may be ultra-narrowband absorption).
「窄帶輻射」係指入射於LP-VTOD上的輻射具有小於88 nm,替代地小於80、70、60、50、40、30、20、15、10、9、8、7、6、5、4、3、2或1 nm之波長帶寬。在一些情況下,帶寬可對應於相對輻射功率與波長之光譜的半高全寬(FWHM)。「超窄帶輻射」為窄帶輻射之子集且係指具有帶寬小於40 nm,替代地小於30、20、15、10、9、8、7、6、5、4、3、2或1 nm之入射光。窄帶輻射(其可視情況為超窄帶輻射)可在一些情況下包括自雷射(雷射輻射或雷射光)、表面安裝二極體(SMD)或一些LED及其類似者所產生之光。"Narrowband radiation" refers to radiation incident on the LP-VTOD having a wavelength bandwidth less than 88 nm, alternatively less than 80, 70, 60, 50, 40, 30, 20, 15, 10, 9, 8, 7, 6, 5, 4, 3, 2, or 1 nm. In some cases, the bandwidth may correspond to the full width at half maximum (FWHM) of the optical spectrum relative to the power of the radiation and the wavelength. "Ultra-narrowband radiation" is a subset of narrowband radiation and refers to incident light having a bandwidth less than 40 nm, alternatively less than 30, 20, 15, 10, 9, 8, 7, 6, 5, 4, 3, 2, or 1 nm. Narrowband radiation (which may be ultra-narrowband radiation) may in some cases include light produced by lasers (laser radiation or laser light), surface-mounted diodes (SMDs), or some LEDs and the like.
「向列-等向性轉變溫度」或T NI 為液晶經歷向列至等向性轉變之溫度,該轉變為自定向有序之向列相至完全無序之等向性相之轉變。如本文中所使用, T NI 係指客體-主體混合物之向列-等向性轉變溫度。 The "nematic-isotropic transition temperature," or TNI, is the temperature at which a liquid crystal undergoes a nematic-to-isotropic transition, from an orientationally ordered nematic phase to a completely disordered isotropic phase. As used herein, TNI refers to the nematic-isotropic transition temperature of a guest-host mixture.
「客體-主體混合物之有序參數」或「S mix 」係指客體-主體混合物在該混合物之峰值吸收波長下之有序參數。混合物可含有一種或多種染料以及其他摻雜劑。 The "order parameter of a guest-host mixture" or "S mix " refers to the order parameter of the guest-host mixture at the mixture's peak absorption wavelength. The mixture may contain one or more dyes and other dopants.
光密度或OD通常係指在特定波長下,例如在峰值染料吸收波長或峰值窄帶輻射波長下量測之輻射的表觀吸收。透射率百分比(%T)經由以下與在特定波長下之總OD相關: %T = 10 (-OD)× 100%。 Optical density, or OD, typically refers to the apparent absorption of radiation measured at a specific wavelength, such as the wavelength of peak dye absorption or peak narrowband radiation. Percent transmittance (%T) is related to the total OD at a specific wavelength by: %T = 10 (-OD) × 100%.
「明視穿透率(photopic transmittance)」或「明視透射率(photopic transmission)」係指由適應白天之人眼的光譜響應加權之可見光的透射百分比。"Photopic transmittance" or "photopic transmission" refers to the percentage of visible light transmitted weighted by the spectral response of the day-adapted human eye.
「偏振相依性」為材料對兩個正交偏振之回應的量度,亦即,其中入射光所經歷之材料光學性質(諸如折射率或吸收/穿透率)取決於入射光之偏振。Polarization dependence is a measure of a material's response to two orthogonal polarizations, i.e., where the optical properties of the material (such as refractive index or absorption/transmittance) experienced by incident light depend on the polarization of the incident light.
「偏振敏感度」為材料在兩個正交偏振之間的回應之相對量度。在理想的理論極限下,百分之零(0%)偏振敏感度係指完全偏振不敏感裝置,且100%偏振敏感度係指如使用偏振器獲得之完全偏振敏感裝置。Polarization sensitivity is a relative measure of a material's response between two orthogonal polarizations. In the ideal theoretical limit, zero percent (0%) polarization sensitivity refers to a completely polarization-insensitive device, and 100% polarization sensitivity refers to a completely polarization-sensitive device, as obtained using a polarizer.
「偏振器」係指吸收或反射入射光之一種偏振多於正交偏振的材料、層或組件。"Polarizer" refers to a material, layer, or component that absorbs or reflects one polarization of incident light more than the orthogonal polarization.
「透射率」及「穿透率」可互換使用且意謂傳輸通過混合物或裝置之光的百分比且可在本文中稱為%T。在一些情況下,穿透率可指特定波長。舉例而言,LP-VTOD之特徵可在於在清透狀態下在峰值吸收波長下之穿透率(%T CS-P)或在暗化狀態下在峰值吸收波長下之穿透率(%T DS-P)。在一些情況下,穿透率可指跨波長範圍之平均值或積分。舉例而言,LP-VTOD之特徵可在於在清透狀態下之明視穿透率(PT CS)或在暗化狀態下之明視穿透率(PT DS)。 "Transmittance" and "transmittance" are used interchangeably and mean the percentage of light transmitted through a mixture or device and may be referred to herein as %T. In some cases, transmittance may refer to a specific wavelength. For example, an LP-VTOD may be characterized by transmittance at the peak absorption wavelength in the clear state (%T CS-P ) or by transmittance at the peak absorption wavelength in the darkened state (%T DS-P ). In some cases, transmittance may refer to the average or integral across a range of wavelengths. For example, an LP-VTOD may be characterized by photopic transmittance in the clear state (PT CS ) or by photopic transmittance in the darkened state (PT DS ).
「透射擺動」係指清透狀態透射與暗化狀態透射之間的透射差異。舉例而言,若清透狀態透射為65%且暗化狀態透射為15%,則透射擺動為65 – 15 = 40%。光學裝置之透射擺動(在波長下或跨波長範圍)可藉由分光光度計判定,或使用其他專用設備來量測,諸如來自美國BYK-Gardner之「Haze-Gard Plus」裝置或等效者。"Transmission swing" refers to the difference in transmission between the clear state and the dark state. For example, if the clear state transmission is 65% and the dark state transmission is 15%, the transmission swing is 65 - 15 = 40%. The transmission swing of an optical device (at a wavelength or across a range of wavelengths) can be determined using a spectrophotometer or other specialized equipment, such as the "Haze-Gard Plus" device from BYK-Gardner (USA) or equivalent.
「著色(tint)」或「著色(tinted)」狀態係指如下條件:相對於清透狀態,客體-主體混合物展現一些光吸收,該光吸收可為窄帶吸收(<175 nm帶寬)或寬帶吸收(≥ 175 nm)。著色狀態可對應於色彩狀態,或替代地可對應於低色彩色度狀態。A "tinted" or "tinted" state refers to a condition in which the guest-host mixture exhibits some light absorption relative to the clear state, which may be narrowband (<175 nm bandwidth) or broadband (≥ 175 nm). The tinted state may correspond to a color state, or alternatively, may correspond to a low color chromaticity state.
「均勻光阻滯」係指光阻滯變化小於±20%之塑膠基板。「光阻滯」被定義為入射光之不同偏振所經歷之光相位的改變。"Uniform retardation" refers to a plastic substrate with a retardation variation of less than ±20%. "Resistance" is defined as the change in optical phase experienced by incident light of different polarizations.
「可見光」係指約400 nm至約700 nm,或替代地約380 nm至約780 nm之波長範圍。“Visible light” refers to the wavelength range of about 400 nm to about 700 nm, or alternatively, about 380 nm to about 780 nm.
如本文中所使用之「寬帶吸收」可指大於175 nm,且較佳大於180 nm、185 nm、190 nm、195 nm或200 nm之光譜吸收帶,其中整個光譜吸收帶被包含在通常假定為400 nm至700 nm,或替代地380 nm至780 nm之可見波長範圍內。寬帶吸收可在一些情況下具有低色彩色度。As used herein, "broadband absorption" may refer to a spectral absorption band greater than 175 nm, and preferably greater than 180 nm, 185 nm, 190 nm, 195 nm, or 200 nm, wherein the entire spectral absorption band is contained within the visible wavelength range, typically assumed to be 400 nm to 700 nm, or alternatively 380 nm to 780 nm. Broadband absorption may, in some cases, have low color chromaticity.
「寬帶單元」係指能夠產生寬吸收帶之裝置。"Broadband unit" refers to a device that can produce a wide absorption band.
「寬帶混合物」係指可用於寬帶單元中之客體-主體液晶混合物。"Broad-band hybrid" refers to a guest-host liquid crystal mixture that can be used in a wide-band cell.
應注意,術語「穿透率」及「透射率」可通常在本文中可互換地使用。 光學裝置概述 It should be noted that the terms "transmittance" and " transmissivity " are generally used interchangeably herein.
圖1為根據一些實施例之雷射保護可變透射光學裝置(「LP-VTOD」)之非限制性實例的橫截面圖。應注意,術語「雷射保護」為方便且非限制性之術語。儘管LP-VTOD可在一些情況下保護使用者或裝置免受雷射光影響,但在其他情況下,LP-VTOD可保護使用者或裝置免受例如由LED、SMD或另一光源產生之某另一窄帶輻射影響。FIG1 is a cross-sectional view of a non-limiting example of a laser-protected variable transmission optical device ("LP-VTOD") according to some embodiments. It should be noted that the term "laser-protected" is used for convenience and is non-limiting. While an LP-VTOD may protect a user or device from laser light in some cases, in other cases, it may protect a user or device from some other narrowband radiation, such as that generated by an LED, SMD, or another light source.
在一些實施例中,LP-VTOD 10可包括第一單元 11,該第一單元與第二單元 31光通信以使得入射光 26可由第一單元、由第二單元或由第一單元及第二單元兩者調變且以透射光 27形式穿過該裝置。入射光 26可包括較低強度分量 26',該較低強度分量包括各種波長之光,例如跨大部分可見光譜之寬帶輻射。入射光 26亦可包括較高強度窄帶輻射分量 26'',例如,來自雷射或LED之光。取決於LP-VTOD如何調變光,透射光 27可包括對應於穿過裝置之 26'之部分的所透射之較低強度分量 27'及對應於穿過裝置之 26''之部分的所透射之窄帶輻射分量 27''。第一及第二單元可視情況藉由層 50分隔,該層可包括例如光學透明黏著劑、聚合物膜、玻璃層,或光學物件,諸如透鏡、偏振旋轉器、半波板、四分之一波板、窗、遮陽板或其類似者。在一些實施例中,層 50可經選擇以減少與介面相關聯之插入損耗。應注意,「第一」及「第二」單元之指定係任意的及可互換的,亦即,在本文中所描述之實施例中,第二單元可代替地首先接收入射光,而非第一單元。 In some embodiments, the LP-VTOD 10 may include a first unit 11 in optical communication with a second unit 31 such that incident light 26 may be modulated by the first unit, the second unit, or both and pass through the device as transmitted light 27. The incident light 26 may include a lower-intensity component 26' comprising light of various wavelengths, such as broadband radiation spanning most of the visible spectrum. The incident light 26 may also include a higher-intensity narrowband radiation component 26" , such as light from a laser or LED. Depending on how the LP-VTOD modulates the light, the transmitted light 27 may include a transmitted lower-intensity component 27' corresponding to the portion of 26' that passes through the device and a transmitted narrowband radiation component 27" corresponding to the portion of 26" that passes through the device. The first and second cells are visibly separated by layer 50 , which may comprise, for example, an optically transparent adhesive, a polymer film, a glass layer, or an optical object such as a lens, a polarization rotator, a half-wave plate, a quarter-wave plate, a window, a sunshade, or the like. In some embodiments, layer 50 may be selected to reduce insertion loss associated with the interface. It should be noted that the designations of "first" and "second" cells are arbitrary and interchangeable, i.e., in the embodiments described herein, the second cell may instead receive incident light first, rather than the first cell.
各單元可包括一對基板, 12a、 12b用於第一單元且 32a、 32b用於第二單元。如稍後更詳細地論述,基板可經獨立地選擇且包括例如聚合物材料、玻璃或陶瓷。各單元可包括一對透明導電層, 14a、 14b用於第一單元且 34a、 34b用於第二單元,該一對透明導電層可設置或塗覆於單元內部之每一相應基板表面上。在一些實施例中,視情況選用之鈍化層(其在一些情況下可稱為絕緣層或「硬塗層」) 16a、 16b、 36a、 36b可提供於相應透明導電層上方。鈍化層可包括例如非導電氧化物、溶膠-凝膠、聚合物或複合物。視情況選用之配向層 18a、 18b、 38a、 38b可提供於鈍化層或透明導電層上方。作為非限制性實例,配向層可包括聚醯亞胺。在一些實施例中,配向層可充當鈍化層。在一些實施例中,配向層可如此項技術中所已知拉絨(brushed)以幫助將電光材料,例如LC主體定向於表面附近。在一些實施例中,單元之兩個配向層經拉絨。在一些實施例中,單元可包括僅一個拉絨配向層。 Each cell may include a pair of substrates, 12a and 12b for the first cell and 32a and 32b for the second cell. As discussed in more detail below, the substrates may be independently selected and may include, for example, a polymer material, glass, or ceramic. Each cell may include a pair of transparent conductive layers, 14a and 14b for the first cell and 34a and 34b for the second cell, which may be disposed or coated on each corresponding substrate surface within the cell. In some embodiments, an optional passivation layer (which may in some cases be referred to as an insulating layer or "hard coat") 16a , 16b , 36a , 36b may be provided over the corresponding transparent conductive layers. The passivation layer may comprise, for example, a non-conductive oxide, a sol-gel, a polymer, or a composite. Optionally, alignment layers 18a , 18b , 38a , 38b may be provided above the passivation layer or the transparent conductive layer. As a non-limiting example, the alignment layer may comprise polyimide. In some embodiments, the alignment layer may function as the passivation layer. In some embodiments, the alignment layer may be brushed as is known in the art to help orient the electro-optical material, such as an LC host, near the surface. In some embodiments, both alignment layers of a cell are brushed. In some embodiments, a cell may comprise only one brushed alignment layer.
在一些實施例中,第一單元之配向層可具有相對於第二單元之配向層旋轉例如70至110度,替代地80至110度,或替代地85至95度的定向。舉例而言,圖2A為展示大致豎直定向之配向刷線 18a-BL的配向層 18a之示意性平面圖。圖2B為展示大致水平定向之配向刷線 38a-BL的配向層 38a(亦即,相對於配向層 18a成約90度)之示意性平面圖。此類組態可在一些情況下能夠在其暗化狀態下吸收更多光。儘管不受理論束縛,但第一單元可比另一單元吸收更多的一種偏振,但藉由旋轉該配向,第二單元可經組態以吸收更多的彼另一偏振。在一些替代實施例中,替代使用配向層定向(或除使用配向層定向以外),諸如半波板之偏振旋轉器可定位於第一單元與第二單元之間(例如,例如層 50)。舉例而言,第一單元及第二單元均可相比於第二偏振(例如,實質上正交於第一偏振)更大程度地吸收具有第一偏振之光。然而,偏振旋轉器之存在作用於透射通過第一單元之第二偏振光且使其旋轉以具有第一偏振。亦即,半波板對第二單元進行組態以吸收第二偏振。在一些其他實施例中,第一及第二單元之電光材料可經選擇以使得第一單元經組態以更大程度地吸收第一偏振,且第二單元經組態以更大程度地吸收第二偏振(例如,實質上正交於第一偏振)。 In some embodiments, the alignment layer of the first cell may have an orientation that is rotated, for example, 70 to 110 degrees, alternatively 80 to 110 degrees, or alternatively 85 to 95 degrees, relative to the alignment layer of the second cell. For example, Figure 2A is a schematic plan view of the alignment layer 18a showing the alignment brush lines 18a-BL oriented generally vertically. Figure 2B is a schematic plan view of the alignment layer 38a showing the alignment brush lines 38a-BL oriented generally horizontally (i.e., at approximately 90 degrees relative to the alignment layer 18a ). This type of configuration may, in some cases, be able to absorb more light in its darkened state. Although not theoretically bound, a first cell may absorb more of one polarization than another cell, but by rotating the alignment, the second cell may be configured to absorb more of the other polarization. In some alternative embodiments, instead of using an alignment layer orientation (or in addition to using an alignment layer orientation), a polarization rotator, such as a half-wave plate, may be positioned between the first cell and the second cell (e.g., such as layer 50 ). For example, both the first cell and the second cell may absorb light having a first polarization to a greater extent than a second polarization (e.g., substantially orthogonal to the first polarization). However, the presence of the polarization rotator acts to rotate the second polarization light transmitted through the first cell to have the first polarization. That is, the half-wave plate configures the second cell to absorb the second polarization. In some other embodiments, the electro-optical materials of the first and second cells may be selected such that the first cell is configured to absorb the first polarization to a greater extent, and the second cell is configured to absorb the second polarization to a greater extent (e.g., substantially orthogonal to the first polarization).
第一單元 11包括提供於第一單元之一對基板 12a、 12b之間的第一電光材料 25,例如第一液晶客體-主體混合物。基板及任何上覆層界定第一單元間隙 20。在施加於第一電光材料上之第一電場之改變後,第一電光材料能夠在第一波長區域中自較高透光率狀態改變為較低透光率狀態。第一電場可例如藉由改變施加於第一單元之一對透明導電層 14a、 14b之間的電壓來改變。在一些實施例中,第一電光材料及/或第一單元在其較低透光率狀態下之特徵可在於具有第一峰值吸收波長及第一FWHM之窄帶吸收。在一些實施例中,第一單元之窄帶吸收可為如先前所描述之超窄帶吸收。 The first cell 11 includes a first electro-optical material 25 , such as a first liquid crystal guest-host mixture, provided between a pair of substrates 12a , 12b of the first cell. The substrates and any overlying layers define a first cell gap 20. Upon changing a first electric field applied to the first electro-optical material, the first electro-optical material can change from a higher transmittance state to a lower transmittance state in a first wavelength region. The first electric field can be varied, for example, by varying a voltage applied between a pair of transparent conductive layers 14a , 14b of the first cell. In some embodiments, the first electro-optical material and/or the first cell in its lower transmittance state can be characterized by narrowband absorption having a first peak absorption wavelength and a first full width at half maximum (FWHM). In some embodiments, the narrowband absorption of the first cell can be ultra-narrowband absorption, as previously described.
類似地,第二單元 31包括提供於第二單元之一對基板 32a、 32b之間的第二電光材料 45,例如可與第一液晶客體-主體混合物相同或不同之第二液晶客體-主體混合物。在施加於第二電光材料上之第二電場之改變後,第二電光材料能夠在可與第一波長區域實質上相同或不同之第二波長區域中自較高透光率狀態改變為較低透光率狀態。第二電場可例如藉由改變施加於第二單元之一對透明導電層 34a、 34b之間的電壓來改變。在一些實施例中,第二電光材料及/或第二單元在其較低透光率狀態下之特徵可在於具有第二峰值吸收波長及第二FWHM之窄帶吸收。在一些實施例中,第二單元之窄帶吸收可為如先前所描述之超窄帶吸收。在一些較佳實施例中,第一峰值吸收波長及第二峰值吸收波長中之一者或兩者在380至780 nm之範圍內,或替代地400至700 nm之範圍內。基板及任何上覆層界定第二單元間隙 40。第二單元間隙 40可與單元間隙 20相同或不同。為了幫助維持該分隔,視情況選用之間隔物(未展示)(諸如玻璃或塑膠棒或珠粒)可插入各單元之相應基板之間。 Similarly, the second cell 31 includes a second electro-optical material 45 provided between a pair of substrates 32a and 32b of the second cell, for example, a second liquid crystal guest-host mixture that may be the same as or different from the first liquid crystal guest-host mixture. Upon changing the second electric field applied to the second electro-optical material, the second electro-optical material can change from a higher transmittance state to a lower transmittance state in a second wavelength region that may be substantially the same as or different from the first wavelength region. The second electric field can be changed, for example, by changing the voltage applied between a pair of transparent conductive layers 34a and 34b of the second cell. In some embodiments, the second electro-optical material and/or the second cell in its lower transmittance state may be characterized by narrowband absorption having a second peak absorption wavelength and a second full width at half maximum (FWHM). In some embodiments, the narrowband absorption of the second cell can be ultra-narrowband absorption as previously described. In some preferred embodiments, one or both of the first peak absorption wavelength and the second peak absorption wavelength are in the range of 380 to 780 nm, or alternatively, in the range of 400 to 700 nm. The substrate and any overlying layers define a second cell gap 40. The second cell gap 40 can be the same as or different from the cell gap 20. To help maintain this separation, optional spacers (not shown) (such as glass or plastic rods or beads) can be inserted between the respective substrates of each cell.
在一些情況下,第一及第二單元結構可由密封材料 13、 33(諸如UV固化光學黏著劑或此項技術中已知之其他密封劑)圍封。密封材料 13及 33可相同或不同。圖1將第一及第二單元之密封材料展示為分隔的,但在一些實施例中,單個共同密封材料層可替代地密封兩個單元。應瞭解,可在任何位置提供密封材料 13、 33以在基板 12a、 12b、 32a、 32b之間創建對電光材料 25、 45之密封。舉例而言而非限制,可將密封材料置放於基板 12a、 12b、 32a、 32b與任何上覆層之間。在一些實施例中,密封材料可包括用於維持單元間隙 20、 40之間隔物。 In some cases, the first and second cell structures may be enclosed by a sealing material 13 , 33 (such as a UV-curable optical adhesive or other sealant known in the art). The sealing materials 13 and 33 may be the same or different. FIG. 1 shows the sealing materials of the first and second cells as separate, but in some embodiments, a single common sealing material layer may alternatively seal both cells. It should be understood that the sealing material 13 , 33 may be provided at any location to create a seal for the electro-optical material 25 , 45 between the substrates 12a , 12b , 32a , 32b . By way of example and not limitation, the sealing material may be placed between the substrates 12a , 12b , 32a , 32b and any overlying layer. In some embodiments, the sealing material may include spacers for maintaining the cell gaps 20 , 40 .
各單元 14a、 14b、 34a、 34b之導電層可電連接至控制器 55。控制器 55可包括分別用於第一單元及第二單元之由圓圈V 1及V 2示意性表示的一個或多個可變電壓供應器。圖1展示第一單元電力電路,其中其開關 28斷開以使得電壓未被施加。當開關 28閉合時,可在液晶客體-主體混合物 25上施加可變電壓或電場。類似地,第二單元電力電路經展示為其開關 48處於斷開位置以使得電壓未被施加。當開關 48閉合時,可在液晶客體-主體混合物 45上施加可變電壓或電場。在一些實施例中,施加於第一單元上之電場可相對於施加於第二單元上之電場獨立控制。獨立控制可在一些情況下允許VTOD對光進行濾波之方式存在更多選項。在一些其他實施例中,施加於第一及第二單元上之電場例如藉由在第一及第二單元之各組電極上同時施加相同電壓輪廓來共同控制。在一些實施例中,第一單元之一個電極與第二單元之一個電極電連通,且第一單元之另一電極與第二單元之另一電極電連通。共同控制可在一些情況下更簡單且允許使用較低成本之控制器。 The conductive layers of each cell 14a , 14b , 34a , 34b can be electrically connected to a controller 55. Controller 55 can include one or more variable voltage supplies, schematically represented by circles V1 and V2 , for the first and second cells, respectively. FIG1 shows the first cell power circuit with its switch 28 open so that no voltage is applied. When switch 28 is closed, a variable voltage or electric field can be applied to the liquid crystal guest-host mixture 25. Similarly, the second cell power circuit is shown with its switch 48 in the open position so that no voltage is applied. When switch 48 is closed, a variable voltage or electric field can be applied to the liquid crystal guest-host mixture 45 . In some embodiments, the electric field applied to the first cell can be controlled independently of the electric field applied to the second cell. Independent control can, in some cases, allow for more options in how the VTOD filters light. In other embodiments, the electric fields applied to the first and second cells are controlled jointly, for example by simultaneously applying the same voltage profile to each set of electrodes in the first and second cells. In some embodiments, one electrode of the first cell is electrically connected to one electrode of the second cell, and another electrode of the first cell is electrically connected to another electrode of the second cell. Joint control can, in some cases, be simpler and allow for the use of a lower-cost controller.
在一些實施例(未展示)中,取代包括層 50,第二及第一單元可共用一基板(例如,基板 12b),使得透明導電層 34a(且視情況其他層 36a及/或 38a)提供於與具有第一單元之透明導電層 14b之基板表面相對的基板表面上。在一些情況下,此類結構可減少可能的光耗損。應注意,基板 12a、 12b、 32a、 32b中之任一者或全部可相同或不同,任何或所有透明導電層 14a、 14b、 34a、 34b可相同或不同,視情況選用之鈍化層 16a、 16b、 36a、 36b中之任一者或全部可相同或不同,且視情況選用之配向層 18a、 18b、 38a、 38b中之任一者或全部可相同或不同。在一些實施例中,一個或兩個單元僅包括一個配向層。 電光材料 In some embodiments (not shown), instead of including layer 50 , the second and first cells may share a substrate (e.g., substrate 12b ), such that transparent conductive layer 34a (and optionally other layers 36a and/or 38a ) is provided on a substrate surface opposite the substrate surface having transparent conductive layer 14b of the first cell. In some cases, such a structure can reduce potential light loss. It should be noted that any or all of the substrates 12a , 12b , 32a , 32b may be the same or different, any or all of the transparent conductive layers 14a , 14b , 34a , 34b may be the same or different, any or all of the passivation layers 16a , 16b , 36a , 36b , if applicable, may be the same or different, and any or all of the alignment layers 18a , 18b , 38a , 38b , if applicable, may be the same or different. In some embodiments, one or both cells include only one alignment layer. Electro-optical Materials
電光材料為在施加電場後能夠改變其光吸收輪廓之材料。在一些實施例中,電光材料包括客體-主體系統,其具有LC主體及溶解或分散於其中之DC染料(客體),或替代地,共價附接至LC主體之二色性光吸收部分(全部被視為客體-主體混合物)。除非另外指出,否則術語「DC染料」包括任何DC光吸收材料,無論係作為小分子抑或作為附接至聚合物、寡聚物或LC主體之部分(moiety)提供。An electro-optic material is a material that changes its light absorption profile upon application of an electric field. In some embodiments, the electro-optic material comprises a guest-host system having an LC host and a DC dye (guest) dissolved or dispersed therein, or alternatively, a dichroic light-absorbing moiety covalently attached to the LC host (all considered guest-host mixtures). Unless otherwise indicated, the term "DC dye" includes any DC light-absorbing material, whether provided as a small molecule or as a moiety attached to a polymer, oligomer, or LC host.
客體-主體系統可用於產生電光效應,該客體-主體系統涉及二色性染料「客體」與液晶「主體」之混合物,其中二色性在電壓可控制液晶單元內經調整。在等向性主體中,分子經隨機定向,且有效吸收為加權平均值:α eff= (2α⊥+α∥)/3。在經設計用於偏振獨立操作之異向性LC主體材料中,取決於所要效應,可將吸收增大至α eff= (α⊥+ α∥)/2或減小至α⊥。 Guest-host systems can be used to generate electro-optical effects. These systems involve a mixture of a dichroic dye (guest) and a liquid crystal (LC) (host), where the dichroism is modulated within a voltage-controllable LC cell. In an isotropic host, the molecules are randomly oriented, and the effective absorption is a weighted average: α eff = (2α⊥ + α∥)/3. In anisotropic LC host materials designed for polarization-independent operation, the absorption can be increased to α eff = (α⊥ + α∥)/2 or decreased to α⊥, depending on the desired effect.
在一些實施例中,液晶客體-主體包括液晶主體與染料材料(在本文中亦稱為DC染料組成物)之混合物。DC染料組成物可表徵為具有二色性性質,且如下文所描述,可包括單個DC染料或DC染料之混合物以提供此等性質。在一些實施例中,液晶客體-主體混合物可調配為「窄帶混合物」。在一些實施例中,至少一個單元 11、 31包括窄帶混合物作為電光材料 25、 45。應注意,在客體-主體材料之上下文中,術語「混合物」一般在本文中廣泛使用,且可指共價附接至LC主體之DC光吸收部分。客體-主體混合物可為(但非必須是)單獨染料與液晶分子之簡單組合。 In some embodiments, the liquid crystal guest-host comprises a mixture of a liquid crystal host and a dye material (also referred to herein as a DC dye composition). The DC dye composition can be characterized as having dichroic properties and, as described below, can include a single DC dye or a mixture of DC dyes to provide these properties. In some embodiments, the liquid crystal guest-host mixture can be formulated as a "narrowband mixture." In some embodiments, at least one cell 11 , 31 includes a narrowband mixture as the electro-optical material 25 , 45. It should be noted that in the context of guest-host materials, the term "mixture" is generally used broadly herein and can refer to a DC light-absorbing moiety covalently attached to the LC host. The guest-host mixture can be, but need not be, a simple combination of a single dye and liquid crystal molecules.
在一些實施例中,第一及第二單元包括具有實質上相同之光學效能(亦即,峰值吸收波長、FWHM吸收帶及總吸收率)的窄帶混合物。在此等實施例中,一個單元經組態以實質上吸收光之一種偏振或本徵模式(eigenmode),而另一單元經組態以實質上吸收光之另一(正交)偏振或本徵模式。In some embodiments, the first and second cells comprise narrowband blends having substantially identical optical performance (i.e., peak absorption wavelength, full-width-at-height (FWHM) absorption band, and total absorptivity). In these embodiments, one cell is configured to substantially absorb one polarization or eigenmode of light, while the other cell is configured to substantially absorb another (orthogonal) polarization or eigenmode of light.
舉例而言,第一電光材料之至少90重量%之化學組分可具有與第二電光材料之至少90重量%之組分(不包括對掌性摻雜劑)相同的分子/聚合物結構。在一些情況下,第一電光材料之各元素的元素分析可相對於第二電光材料之元素分析相差10%(原子%或重量%)以內。在一些情況下,第一及第二單元之光譜性質可實質上相同。舉例而言,第一峰值吸收波長可與第二峰值吸收波長相差10%或5%以內,或第一FWHM可與第二FWHM相差10%或5%以內。此組合之優點在於該系統可在阻擋例如來自雷射目標波長方面極有效而無關於其偏振。替代地,有可能增加總吸收率,從而克服各單元中之潛在溶解度限制。已發現,兩個類似單元堆疊在一起可比嘗試使單元間隙或染料濃度加倍更有效,此係因為其可解決兩種本徵模式。舉例而言,已發現,使用具有實質上相同混合物之兩個單元可提供至少1.0,替代地至少1.5、2.0、2.5、3.0、3.5或甚至更高之光密度。此類位準對於阻擋諸如雷射光之高強度窄帶光可尤其重要。For example, at least 90 weight % of the chemical composition of the first electro-optical material may have the same molecular/polymer structure as at least 90 weight % of the composition of the second electro-optical material (excluding the chiral dopant). In some cases, the elemental analysis of each element of the first electro-optical material may differ from the elemental analysis of the second electro-optical material by 10% (atomic % or weight %). In some cases, the spectral properties of the first and second units may be substantially the same. For example, the first peak absorption wavelength may differ from the second peak absorption wavelength by 10% or 5%, or the first FWHM may differ from the second FWHM by 10% or 5%. The advantage of this combination is that the system can be extremely effective in blocking, for example, the target wavelength from the laser, regardless of its polarization. Alternatively, it is possible to increase the total absorptivity, thereby overcoming the potential solubility limitations in each unit. It has been found that stacking two similar cells together can be more effective than attempting to double the cell gap or dye concentration because it can resolve both eigenmodes. For example, it has been found that using two cells with substantially identical mixtures can provide an optical density of at least 1.0, alternatively at least 1.5, 2.0, 2.5, 3.0, 3.5, or even higher. Such levels can be particularly important for blocking high-intensity narrowband light, such as laser light.
在一些實施例中,各單元包括在某一方面不同於另一單元之窄帶混合物(其中之一者或兩者可視情況為超窄帶混合物)。一般而言,不同混合物為如上文所描述「實質上」不「相同」之混合物。舉例而言,第一DC染料組成物可不同於第二DC染料組成物。在一些情況下,可使用不同之發色團或不同之發色團混合物。在一些情況下,第一峰值吸收波長與第二峰值吸收波長例如相差至少5 nm或10 nm,或替代地至少5%或10%,或第一FWHM可與第二FWHM例如相差至少5 nm或10 nm,或替代地至少5%或10%。在一些情況下,峰值吸收波長不同以使得各單元吸收光譜之不同區域(例如,一個單元吸收紅光且另一單元吸收綠光,或適當時,任何其他色彩組合)。在一些情況下,可相對於第二電光材料將不同主體材料用於第一電光材料。使用不同之兩個單元之優點在於VTOD可同時阻擋多個波長,例如來自紅光及綠光雷射。 LC 主體 In some embodiments, each unit comprises a narrowband mixture that differs in some respect from the other unit (one or both of which may be ultra-narrowband mixtures, as the case may be). Generally speaking, different mixtures are mixtures that are "substantially" not "identical" as described above. For example, the first DC dye composition may be different from the second DC dye composition. In some cases, different chromophores or different chromophore mixtures may be used. In some cases, the first peak absorption wavelength differs from the second peak absorption wavelength by, for example, at least 5 nm or 10 nm, or alternatively, by at least 5% or 10%, or the first FWHM may differ from the second FWHM by, for example, at least 5 nm or 10 nm, or alternatively, by at least 5% or 10%. In some cases, the peak absorption wavelengths differ so that each unit absorbs different regions of the spectrum (e.g., one unit absorbs red light and another unit absorbs green light, or any other color combination, as appropriate). In some cases, a different host material may be used for the first electro-optic material than for the second electro-optic material. The advantage of using two different cells is that the VTOD can block multiple wavelengths simultaneously, such as from red and green lasers. LC Host
在一些實施例中,主體包括對掌性向列型或膽固醇型液晶材料(統稱為「CLC」),其可具有負介電異向性(「負CLC」)或正介電異向性(「正CLC」)。在CLC之一些實施例中,液晶材料為膽固醇型,或其包括與對掌性摻雜劑組合之向列型液晶。CLC材料具有扭轉或螺旋結構。扭轉之週期性稱為其「間距」(「p」)。液晶主體之定向或有序性可在施加電場後改變,且與染料材料組合可用於控制或部分控制單元 11、 31之光學性質。在一些實施例中,CLC之特徵可進一步在於其對掌性,亦即右旋對掌性或左旋對掌性。 In some embodiments, the host comprises a chiral nematic or cholesteric liquid crystal material (collectively referred to as "CLC"), which may have a negative dielectric anisotropy ("negative CLC") or a positive dielectric anisotropy ("positive CLC"). In some embodiments of CLC, the liquid crystal material is cholesteric, or it comprises a nematic liquid crystal in combination with a chiral dopant. The CLC material has a twisted or helical structure. The periodicity of the twist is referred to as its "pitch"("p"). The orientation or order of the liquid crystal host can be changed upon application of an electric field and, in combination with a dye material, can be used to control or partially control the optical properties of the cells 11 , 31. In some embodiments, the CLC may be further characterized by its chirality, i.e., right-handed or left-handed.
各種CLC材料為可用的且在本揭示之各種實施例中具有潛在效用。A variety of CLC materials are available and have potential utility in various embodiments of the present disclosure.
在一些實施例中,LC主體為向列型LC(零對掌性)或為鐵電的或層列型,且可具有正或負介電異向性。應注意,非零d/p可藉由使用如此項技術中已知之經適當摩擦表面來達成。 染料材料 In some embodiments, the LC host is a nematic LC (zero chirality) or is ferroelectric or smectic and may have positive or negative dielectric anisotropy. It should be noted that non-zero d/p can be achieved by using a suitably rubbed surface as known in the art. Dye Materials
在一些實施例中,染料材料可進一步包括少量現有吸收染料,例如以在清透狀態下為裝置提供所要整體色調。在一些實施例中,染料組成物實質上僅包括DC染料。 DC 染料 In some embodiments, the dye material may further include a small amount of an existing absorbing dye, for example to provide a desired overall color tone to the device in the clear state. In some embodiments, the dye composition includes essentially only DC dye. DC Dye
二色性染料通常具有細長的分子形狀且展現異向性吸收(亦即,光之吸收取決於偏振方向而變化)。在本系統中,沿著分子之長軸之吸收較高,且此等染料可稱為「正染料」或展現正二色性之染料。本文中通常使用正DC染料。在一些實施例中,DC染料(如在LC主體中所量測)之二色性比率可為至少5.0,替代地至少6、7、8、9、10、11、12、13、14、15、16、17、18、19或20。Dichroic dyes typically have an elongated molecular shape and exhibit anisotropic absorption (i.e., the absorption of light varies depending on the polarization direction). In the present system, absorption is higher along the long axis of the molecule, and these dyes can be referred to as "positive dyes," or dyes exhibiting positive dichroism. Positive DC dyes are typically used herein. In some embodiments, the dichroic ratio of a DC dye (as measured in an LC host) can be at least 5.0, alternatively at least 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, or 20.
DC染料之可見光吸收位準可為染料類型及LC主體之函數。在本揭示之光學裝置中,可見光之表觀吸收亦可為電壓之函數。 LC之定向或長程有序性可為跨單元厚度之電場或電壓之函數。DC染料展現與LC主體之某種配向,使得施加電壓可用於更改單元之表觀暗度。The visible light absorption level of a DC dye can be a function of the dye type and the LC host. In the disclosed optical devices, the apparent visible light absorption can also be a function of voltage. The orientation or long-range order of the LC can be a function of the electric field or voltage across the thickness of the cell. The DC dye exhibits a certain alignment with the LC host, allowing the application of voltage to alter the apparent darkness of the cell.
在一些實施例中,DC染料可包括小分子類型之材料。在一些實施例中,DC染料可包括寡聚或聚合物材料。亦有可能將聚合物組分添加至染料混合物。負責光吸收之化學部分(moiety)可例如為主鏈上之側基(pendent group)。可視情況使用多種DC染料例如以調諧光吸收包絡(envelope),或相對於壽命或某另一性質改良總體單元效能。DC染料可包括可改良溶解度、與LC主體之混溶性或至LC主體之鍵結的官能基。DC染料之一些非限制性實例可包括偶氮染料,例如具有2至10個偶氮基團,或替代地2至6個偶氮基團之偶氮染料。其他DC染料為此項技術中已知的,諸如蒽醌、苝、三苯酚二 嗪、喹啉黃及硼二吡咯亞甲基(boron-dipyrromethene;BODIPY)染料。一般而言,可使用具有二色性性質之任何分子。對於一些應用,吸收帶FWHM為175 nm或更小之DC染料為較佳的。替代地,DC染料可具有小於150 nm、125 nm、100 nm、90 nm、80 nm、70 nm、60 nm、50 nm、40 nm、30 nm、20 nm或10 nm之FWHM吸收。 In some embodiments, the DC dye may comprise a small molecule type of material. In some embodiments, the DC dye may comprise an oligomeric or polymeric material. It is also possible to add a polymer component to the dye mixture. The chemical moiety responsible for light absorption may be, for example, a pendent group on the main chain. Multiple DC dyes may be used as appropriate, for example to tune the light absorption envelope, or to improve the overall unit performance with respect to lifetime or some other property. The DC dye may comprise functional groups that may improve solubility, miscibility with the LC host, or bonding to the LC host. Some non-limiting examples of DC dyes may include azo dyes, for example, azo dyes having 2 to 10 azo groups, or alternatively 2 to 6 azo groups. Other DC dyes are known in the art, such as anthraquinones, perylenes, triphenol diols, and the like. Examples of dyes include oxazine, quinoline yellow, and boron-dipyrromethene (BODIPY) dyes. Generally, any molecule with dichroic properties can be used. For some applications, DC dyes with a FWHM absorption band of 175 nm or less are preferred. Alternatively, DC dyes may have a FWHM absorption band of less than 150 nm, 125 nm, 100 nm, 90 nm, 80 nm, 70 nm, 60 nm, 50 nm, 40 nm, 30 nm, 20 nm, or 10 nm.
應注意,一種或多種DC染料可用於窄帶混合物,亦即,可用於在窄帶單元中來產生窄帶吸收之客體-主體液晶混合物。 其他單元特徵基板 It should be noted that one or more DC dyes can be used in narrowband mixtures, that is, can be used to produce narrowband absorbing guest-host liquid crystal mixtures in narrowband cells. Other cell characteristics Substrate
再次參考圖1,在一些實施例中,基板 12a、 12b、 32a、 32b可經獨立地選擇,且可包括塑膠、玻璃、陶瓷或某另一材料。材料之選擇及其特定性質部分地取決於預期應用。對於許多應用,基板應至少部分地透射可見光。在一些實施例中,基板可對波長在400 nm與700 nm之間的可見輻射具有高於45%之透射率,替代地,高於50%、60%、70%、80%、90%或95%之透射率。在一些實施例中,基板可具有高光學清晰度,使得個人或感測器可清楚地看穿LP-VTOD 10。在一些實施例中,基板可視情況具有某一色彩或色調。在一些實施例中,基板可在單元外部上具有光學塗層。基板可為可撓性或剛性的。 Referring again to FIG. 1 , in some embodiments, substrates 12a , 12b , 32a , 32b may be independently selected and may comprise plastic, glass, ceramic, or some other material. The choice of material and its specific properties depend in part on the intended application. For many applications, the substrate should be at least partially transmissive to visible light. In some embodiments, the substrate may have a transmittance greater than 45% for visible radiation between wavelengths of 400 nm and 700 nm, alternatively, a transmittance greater than 50%, 60%, 70%, 80%, 90%, or 95%. In some embodiments, the substrate may have high optical clarity so that a person or sensor can clearly see through the LP-VTOD 10. In some embodiments, the substrate may have a color or hue. In some embodiments, the substrate may have an optical coating on the exterior of the cell. The substrate can be flexible or rigid.
作為一些非限制性實例,塑膠基板可包括聚碳酸酯(PC)、聚碳酸酯及共聚物摻合物、聚醚碸(PES)、聚對苯二甲酸乙二酯(PET)、三乙酸纖維素(TAC)、聚醯胺、對硝苯基丁酸酯(PNB)、聚醚醚酮(PEEK)、聚萘二甲酸伸乙酯(PEN)、聚醚醯亞胺(PEI)、聚芳酯(PAR)、聚乙酸乙烯酯、環烯烴聚合物(COP)或此項技術中已知之其他類似塑膠。在一些非限制性實例中,包括諸如Corning® Willow®玻璃及其類似者之材料的可撓性玻璃可用作基板。基板可包括多種材料或具有多層結構。As some non-limiting examples, the plastic substrate may include polycarbonate (PC), polycarbonate and copolymer blends, polyether sulfone (PES), polyethylene terephthalate (PET), cellulose triacetate (TAC), polyamide, p-nitrophenyl butyrate (PNB), polyetheretherketone (PEEK), polyethylene naphthalate (PEN), polyetherimide (PEI), polyarylate (PAR), polyvinyl acetate, cycloolefin polymer (COP), or other similar plastics known in the art. In some non-limiting examples, flexible glass, including materials such as Corning® Willow® glass and the like, may be used as the substrate. The substrate may include multiple materials or have a multi-layer structure.
在一些實施例中,基板之厚度可在10至20 µm、20至30 µm、30至40 µm、40至50 µm、50至75 µm、75至100 µm、100至150 µm、150至200 µm、200至250 µm、250至300 µm、300至350 µm、350至400 µm、400至450 µm、450至500 µm、500至600 µm、600至800 µm、800至1000 µm,或大於1 mm或其任何範圍組合之範圍內。In some embodiments, the thickness of the substrate can be in the range of 10-20 μm, 20-30 μm, 30-40 μm, 40-50 μm, 50-75 μm, 75-100 μm, 100-150 μm, 150-200 μm, 200-250 μm, 250-300 μm, 300-350 μm, 350-400 μm, 400-450 μm, 450-500 μm, 500-600 μm, 600-800 μm, 800-1000 μm, or greater than 1 mm, or any combination of ranges thereof.
在一些實施例中,LP-VTOD 10不使用偏振器。 透明導電層 In some embodiments, the LP-VTOD 10 does not use a polarizer .
藉由「透明」導電層,意謂導電層 14a、 14b、 34a、 34b允許至少45%之入射可見光穿過。透明導電層可吸收或反射可見光之一部分且仍有用。在一些實施例中,透明導電層可包括透明導電氧化物(TCO),包括但不限於ITO、AZO或FTO。在一些實施例中,透明導電層可包括導電聚合物,包括但不限PEDOT:PSS、聚(吡咯)、聚苯胺、聚苯或聚(乙炔)。在一些實施例中,透明導電層可包括部分透明金屬薄層或金屬奈米線,例如,由銀、銅、鋁或金形成。在一些實施例中,透明導電層可包括石墨烯。 By "transparent" conductive layer, it is meant that the conductive layer 14a , 14b , 34a , 34b allows at least 45% of incident visible light to pass through. A transparent conductive layer can absorb or reflect a portion of visible light and still be useful. In some embodiments, the transparent conductive layer may comprise a transparent conductive oxide (TCO), including but not limited to ITO, AZO, or FTO. In some embodiments, the transparent conductive layer may comprise a conductive polymer, including but not limited to PEDOT:PSS, poly(pyrrole), polyaniline, polyphenylene, or poly(acetylene). In some embodiments, the transparent conductive layer may comprise a partially transparent metal thin layer or metal nanowire, for example, formed of silver, copper, aluminum, or gold. In some embodiments, the transparent conductive layer may comprise graphene.
窄帶光源Narrowband light source
在一些實施例中,窄帶輻射之波長帶寬可小於88 nm,替代地小於80、70、60、50、40、30、20、15、10、9、8、7、6、5、4、3、2 mn,或帶寬等於1 nm。在一些情況下,帶寬可對應於相對輻射功率與波長之光譜的半高全寬(FWHM)。在一些實施例中,窄帶輻射可為超窄帶輻射,諸如同調性(coherent)雷射光,例如源自一個或多個脈衝或連續波雷射。在一些情況下,窄帶輻射可為非同調性的,且源自一個或多個雷射二極體、LED、微LED、超發光二極體(SLD)、表面安裝二極體(SMD),或雷射或LED泵浦磷光體裝置。替代地,窄帶輻射可源自氙、汞或其他高強度燈,其光輸出經由彩色濾光器元件且視情況經由準直透鏡來發送。在一些實施例中,窄帶輻射可源自基於GaN、GaAs或InP之雷射或二極體。In some embodiments, the wavelength bandwidth of the narrowband radiation can be less than 88 nm, alternatively less than 80, 70, 60, 50, 40, 30, 20, 15, 10, 9, 8, 7, 6, 5, 4, 3, or 2 nm, or a bandwidth equal to 1 nm. In some cases, the bandwidth can correspond to the full width at half maximum (FWHM) of a spectrum relative to radiation power and wavelength. In some embodiments, the narrowband radiation can be ultra-narrowband radiation, such as coherent laser light, for example, derived from one or more pulsed or continuous wave lasers. In some cases, the narrowband radiation can be non-coherent and originate from one or more laser diodes, LEDs, micro-LEDs, superluminescent diodes (SLDs), surface-mount diodes (SMDs), or laser- or LED-pumped phosphor devices. Alternatively, the narrowband radiation can originate from a xenon, mercury, or other high-intensity lamp, whose light output is routed through a color filter element and, optionally, a collimating lens. In some embodiments, the narrowband radiation can originate from a laser or diode based on GaN, GaAs, or InP.
一般而言,峰值窄帶輻射波長可在100 nm至1 mm之電磁光譜的任何區域內。在一些實施例中,至少一個峰值窄帶輻射波長在可見光譜中,亦即,範圍為380 nm至780 nm,或替代地400 nm至700 nm。在一些情況下,至少一個窄帶輻射波長在大於400 nm多至(且包括)500 nm、大於500 nm多至(且包括)600 nm,或大於600 nm多至(且包括)700 nm之範圍內。在其他實施例中,至少一個峰值窄帶輻射波長在紅外線(IR)或紫外線(UV)區域中。IR波長包括近IR(700 nm至1,300 nm)、中IR(1,300 nm至3,000 nm)或遠IR(3,000 nm至1 mm)輻射。UV波長包括在100至380 nm,或替代地100至400 nm內之峰值輻射波長。Generally speaking, the peak narrowband radiation wavelength can be anywhere in the electromagnetic spectrum between 100 nm and 1 mm. In some embodiments, at least one peak narrowband radiation wavelength is in the visible spectrum, i.e., in the range of 380 nm to 780 nm, or alternatively, 400 nm to 700 nm. In some cases, at least one narrowband radiation wavelength is in the range of greater than 400 nm up to and including 500 nm, greater than 500 nm up to and including 600 nm, or greater than 600 nm up to and including 700 nm. In other embodiments, at least one peak narrowband radiation wavelength is in the infrared (IR) or ultraviolet (UV) region. IR wavelengths include near IR (700 nm to 1,300 nm), mid IR (1,300 nm to 3,000 nm), or far IR (3,000 nm to 1 mm) radiation. UV wavelengths include peak radiation wavelengths within the range of 100 to 380 nm, or alternatively, 100 to 400 nm.
當存在多個窄帶輻射源時,第二(或額外)峰值窄帶輻射波長可在可見範圍——如上文所描述之UV或IR範圍內。在一些狀況下,第二(或額外)峰值窄帶輻射波長可在大於100 nm、200 nm或240 nm多至(且包括)380 nm、大於780 nm多至(且包括)1,300 nm、或大於1,300 nm多至(且包括)3,000 nm、大於3,000 nm多至(且包括)1 mm或其間之任何範圍的範圍內。在一些實施例中,窄帶輻射為具有約257 nm、266 nm、343 nm、355 nm、405 nm、450 nm、473 nm、473 nm、488 nm、515 nm、520 nm、532 nm、589 nm、593 nm、635 nm、638 nm、650 nm、660 nm、670 nm、694 nm、914 nm、1030 nm、1047 nm、1064 nm、1319 nm、1342 nm、1444 nm、1645 nm、2000 nm、2100 nm、2940 nm之峰值強度波長或某另一波長的雷射光。 LP-VTOD 實施例及性質 When there are multiple narrowband radiation sources, the second (or additional) peak narrowband radiation wavelength may be in the visible range, such as the UV or IR range described above. In some cases, the second (or additional) peak narrowband radiation wavelength may be in a range greater than 100 nm, 200 nm, or 240 nm up to (and including) 380 nm, greater than 780 nm up to (and including) 1,300 nm, or greater than 1,300 nm up to (and including) 3,000 nm, greater than 3,000 nm up to (and including) 1 mm, or any range therebetween. In some embodiments, the narrowband radiation is laser light having a peak intensity wavelength of about 257 nm, 266 nm, 343 nm, 355 nm, 405 nm, 450 nm, 473 nm, 473 nm, 488 nm, 515 nm, 520 nm, 532 nm, 589 nm, 593 nm, 635 nm, 638 nm, 650 nm, 660 nm, 670 nm, 694 nm, 914 nm, 1030 nm, 1047 nm, 1064 nm, 1319 nm, 1342 nm, 1444 nm, 1645 nm, 2000 nm, 2100 nm, 2940 nm, or some other wavelength. LP-VTOD Embodiments and Properties
下文為對裝置實施例中之一些如何用以改良可見度同時抵禦諸如雷射之窄帶強光源的描述。與用於雷射保護之靜態膜相比,所描述之裝置具有以下優點:(a)僅在需要時具吸收性,因此其在不需要之其他時間減少對使用者之視覺或色彩感知的削弱,及(b)窄吸收帶經設計以僅吸收針對保護所必要的光之波長,藉此增加整個系統之明視透射率。The following describes some device embodiments for improving visibility while protecting against narrowband, intense light sources such as lasers. Compared to static films used for laser protection, the described devices offer the following advantages: (a) they are absorptive only when needed, thus minimizing impairment of the user's vision or color perception when not needed, and (b) their narrow absorption bands are designed to absorb only the wavelengths of light necessary for protection, thereby increasing the overall system's photopic transmittance.
圖3A至圖3D為根據一些實施例之LP-VTOD之非限制性實例的一系列橫截面示意圖。LP-VTOD 310包括具有第一客體-主體混合物之第一單元 311,該第一客體-主體混合物包括負第一LC主體 322及第一染料組成物 324,第一染料組成物324可包括至少一種正DC染料。繪製主體及染料分子以說明一般定向。第一單元與具有第二客體-主體混合物之第二單元 331光通信,該第二客體-主體混合物包括負第二LC主體 342及第二染料組成物 344,其可包括不同於第一DC染料組成物324之至少一種正DC染料。為了清楚起見,單元 311、 331之其他組件未展示,但其可視情況如關於圖1及其變化形式所描述。在一些實施例中,各單元可由提供於控制器 355中之電力電路V 1及V 2獨立控制。 Figures 3A through 3D are a series of cross-sectional schematic diagrams illustrating non-limiting examples of LP-VTODs according to some embodiments. LP-VTOD 310 includes a first cell 311 having a first guest-host mixture, including a negative first LC host 322 and a first dye composition 324 , which may include at least one positive DC dye. The host and dye molecules are depicted to illustrate general orientation. The first cell is in optical communication with a second cell 331 having a second guest-host mixture, including a negative second LC host 342 and a second dye composition 344 , which may include at least one positive DC dye different from the first DC dye composition 324. For clarity, other components of cells 311 and 331 are not shown, but may be described as described with respect to Figure 1 and its variations. In some embodiments, each unit can be independently controlled by power circuits V1 and V2 provided in controller 355 .
在此實施例中,第一單元吸收第一波長區域中之光,且第二單元吸收不同於第一波長區域之第二波長區域中之光。在圖3A中,電力電路V 1及V 2兩者均斷開,即未在單元 311、 331上施加電壓。第一單元及第二單元兩者均處於較高光透射狀態(其可處於或接近其最大光透射狀態),且LP-VTOD 310處於清透狀態,其可處於或接近其最大光透射狀態,其中大量入射光 326以透射光 327a形式穿過。入射光 326可包括寬帶光 326',其可對應於來自一般環境(例如,房間、戶外或其類似者)之通常由跨可見光譜中之一些或全部的各種波長組成之光。 In this embodiment, the first cell absorbs light in a first wavelength region, and the second cell absorbs light in a second wavelength region different from the first wavelength region. In FIG3A , both power circuits V1 and V2 are disconnected, i.e., no voltage is applied to cells 311 and 331. Both the first and second cells are in a relatively high light transmission state (which may be at or near their maximum light transmission state), and LP-VTOD 310 is in a clear state (which may be at or near its maximum light transmission state), wherein a significant amount of incident light 326 passes through as transmitted light 327a . Incident light 326 may include broadband light 326′ , which may correspond to light from a typical environment (e.g., a room, outdoors, or the like) typically composed of various wavelengths across some or all of the visible spectrum.
入射光 326可進一步包括在第一峰值窄帶輻射波長下具有峰值強度之第一窄帶輻射 326-1'',且在一些情況下,入射光亦可包括在與第一窄帶輻射波長相差至少5 nm或至少5%之第二峰值窄帶輻射波長下具有峰值強度之第二窄帶輻射 326-2''。第一窄帶輻射及第二窄帶輻射可來自上文所描述之雷射或其他窄帶光源,且可具有高於寬帶光 326'之強度,例如,足以擾亂或甚至損壞個人視覺或感測器(諸如攝影機感測器)之功能。在圖3A中,透射光 327a可包括所透射之寬帶光 327a'、所透射之第一窄帶輻射 327-1a''及所透射之第二窄帶輻射 327-2a''。 Incident light 326 may further include first narrowband radiation 326-1″ having a peak intensity at a first peak narrowband radiation wavelength. In some cases, the incident light may also include second narrowband radiation 326-2″ having a peak intensity at a second peak narrowband radiation wavelength that differs from the first narrowband radiation wavelength by at least 5 nm or at least 5%. The first and second narrowband radiation may be derived from lasers or other narrowband light sources as described above and may have an intensity higher than that of broadband light 326′ , for example, sufficient to disrupt or even damage the function of a person's vision or a sensor (such as a camera sensor). In FIG. 3A , the transmitted light 327 a may include transmitted broadband light 327 a ′ , transmitted first narrowband radiation 327 - 1 a ″, and transmitted second narrowband radiation 327 - 2 a ″ .
VTOD可經組態以使得與整個系統之總(明視)吸收率相比,各單元在峰值吸收波長下具有不同穿透率。舉例而言,在一些實施例中,至少一個單元之清透狀態的清透狀態明視透射率PT CS可為至少40%(替代地,至少50%、60%、70%、80%、90%或95%)。在一些情況下,裝置之特徵可在於在峰值吸收波長下針對至少一個單元為1至5%,或替代地至少10%、20%、30%、40%、50%、60%、70%、80%或90%之清透狀態透射率(%T CS-P)。%T CS-P可指第一峰值吸收波長(%T CS-P1)或第二峰值吸收波長(%T CS-P2)。 The VTOD can be configured such that each cell has a different transmittance at the peak absorption wavelength compared to the total (photopic) absorptivity of the entire system. For example, in some embodiments, the clear state photopic transmittance (PTCS ) of at least one cell in the clear state can be at least 40% (alternatively, at least 50%, 60%, 70%, 80%, 90%, or 95%). In some cases, the device can be characterized by a clear state transmittance (%TCS-P) of 1 to 5%, or alternatively, at least 10%, 20%, 30%, 40%, 50%, 60%, 70%, 80%, or 90% for at least one cell at the peak absorption wavelength. %TCS -P can refer to the first peak absorption wavelength (%TCS -P1 ) or the second peak absorption wavelength (%TCS -P2 ).
在圖3B中,第二單元之電力電路V 2保持斷開,即未施加電壓,但第一單元之電力電路V 1閉合,且施加高於足以顯著地重新定向LC主體 322及DC染料組成物 324之臨限電壓的電壓。第一波長區域中之光吸收隨著電壓增加而增加。光透射可基於所施加電壓達到某一點而變化,超出該點,增加電壓具有較小效應。在圖3B中,LP-VTOD處於第一著色狀態(其在本文中亦可稱為第一暗化狀態),其中第一單元 311在第一波長區域中處於較低透光率狀態(視情況處於或接近其最小光透射狀態),使得第一波長區域中之入射可見光 326的一些量被吸收,從而產生透射光 327b。特定言之,第一單元阻擋大量窄帶輻射 326-1'',該窄帶輻射以顯著減小之強度以 327-1b''形式傳遞。啟動第一單元亦可阻擋寬帶輻射 326'中之一些,但因為第一單元具有窄帶吸收,所以大多數 326'以所透射之寬帶輻射 327b'形式穿過,使得使用者或感測器仍可充分地查看場景或環境而無實質性失真。阻擋窄帶輻射同時仍保持場景或環境之可接受查看條件為使用者提供額外安全性,尤其係處於危險情形、操作車輛或飛機或其類似者之使用者。舉例而言,使用者或感測器可偵測窄帶輻射 326-1'',例如強532 nm雷射光,且啟動單元(手動地或自動地)。然而,在此組態中,若存在任何第二窄帶輻射 326-2'',則其可以第二窄帶輻射 327-2b''形式傳遞。 In Figure 3B, the power circuit V2 of the second cell remains open (no voltage applied), but the power circuit V1 of the first cell is closed and a voltage is applied that is higher than the threshold voltage sufficient to significantly reorient the LC host 322 and DC dye composition 324. Light absorption in the first wavelength region increases as the voltage increases. Light transmission can vary based on the applied voltage up to a certain point, beyond which increasing the voltage has little effect. In FIG3B , the LP-VTOD is in a first colored state (also referred to herein as a first darkened state), wherein the first cell 311 is in a relatively low-transmittance state in a first wavelength region (optionally at or near its minimum light transmission state), causing some absorption of incident visible light 326 in the first wavelength region, thereby generating transmitted light 327b . Specifically, the first cell blocks a significant amount of narrowband radiation 326-1″ , which is transmitted at a significantly reduced intensity as 327-1b″ . Activating the first unit also blocks some of the broadband radiation 326' , but because the first unit has narrowband absorption, most of 326' passes through as transmitted broadband radiation 327b' , allowing the user or sensor to still fully view the scene or environment without substantial distortion. Blocking narrowband radiation while still maintaining acceptable viewing conditions for the scene or environment provides additional safety for users, particularly those in hazardous situations, operating vehicles, aircraft, or the like. For example, a user or sensor can detect narrowband radiation 326-1" , such as intense 532 nm laser light, and activate the unit (manually or automatically). However, in this configuration, if any second narrowband radiation 326-2″ exists, it may be transmitted as second narrowband radiation 327-2b″ .
在圖3C中,第一單元之電力電路V 1斷開,即未施加電壓,但第二單元之電力電路V 2閉合,且施加高於足以顯著地重新定向LC主體 342及DC染料組成物 344之臨限電壓的電壓。第二波長區域中之光吸收隨著電壓增加而增加。光透射可基於所施加電壓達到某一點而變化,超出該點,增加電壓具有較小效應。在圖3C中,LP-VTOD處於第二著色狀態(其在本文中亦可稱為第二暗化狀態),其中第二單元在第二波長區域中處於較低透光率狀態(視情況處於或接近其最小光透射狀態),使得第二波長區域中之入射可見光 326的一些量被吸收,從而產生透射光 327c。特定言之,第二單元阻擋大量窄帶輻射 326-2'',該窄帶輻射以顯著減小之強度以 327-2c''形式傳遞。啟動第二單元亦可阻擋寬帶輻射 326'中之一些,但因為第二單元具有窄帶吸收,所以大多數 326'以所透射之寬帶輻射 327c'形式穿過,使得使用者或感測器仍可充分地查看場景或環境而無實質性失真。阻擋窄帶輻射同時仍保持場景或環境之可接受查看條件為使用者提供額外安全性,尤其係處於危險情形、操作車輛或飛機或其類似者之使用者。舉例而言,使用者或感測器可偵測窄帶輻射 326-2'',例如強635 nm雷射光,且(手動地或自動地)啟動單元。然而,在此組態中,若存在任何第一窄帶輻射 326-1'',則其可以第一窄帶輻射 327-1c''形式傳遞。 In Figure 3C, the power circuit V1 of the first cell is open, meaning no voltage is applied, while the power circuit V2 of the second cell is closed and a voltage is applied that is higher than the threshold voltage sufficient to significantly reorient the LC host 342 and DC dye composition 344. Light absorption in the second wavelength region increases with increasing voltage. Light transmission can vary based on the applied voltage up to a certain point, beyond which increasing the voltage has little effect. In FIG3C , the LP-VTOD is in a second colored state (also referred to herein as a second darkened state), wherein the second cell is in a relatively low light transmittance state in the second wavelength region (optionally at or near its minimum light transmission state), so that some amount of incident visible light 326 in the second wavelength region is absorbed, thereby generating transmitted light 327 c . Specifically, the second cell blocks a significant amount of narrowband radiation 326 - 2 ″ , which is transmitted at a significantly reduced intensity as 327 - 2 c ″ . Activating the second unit also blocks some of the broadband radiation 326' . However, because the second unit has narrowband absorption, most of the broadband radiation 326' passes through as transmitted broadband radiation 327c' , allowing the user or sensor to still fully view the scene or environment without substantial distortion. Blocking narrowband radiation while still maintaining acceptable viewing conditions for the scene or environment provides additional safety for users, particularly those in hazardous situations, operating vehicles, aircraft, or the like. For example, a user or sensor can detect narrowband radiation 326-2" , such as intense 635 nm laser light, and activate the unit (manually or automatically). However, in this configuration, if any first narrowband radiation 326-1″ exists, it may be transmitted as first narrowband radiation 327-1c″ .
在圖3D中,第一及第二單元之電力電路V 1及V 2兩者均閉合且將電壓(高於臨限電壓)施加至兩個單元,使得各單元可如分別關於圖3B及圖3C通常所描述而操作,使得入射光 326以透射光 327d形式穿過。此處,第一窄帶輻射 326-1''及第二窄帶輻射 326-2''兩者實質上被阻擋,該等輻射以各自具有顯著減小之強度的 327-1d''及 327-2d''傳遞。此外,儘管可存在寬帶輻射 326'之某一減少或濾波,但其大多數有利地以所透射之寬帶輻射 327d'形式穿過,使得使用者或感測器可仍充分地查看場景或環境而無實質性失真,如先前所解釋。 In FIG3D , the power circuits V1 and V2 of the first and second cells are both closed and a voltage (above the threshold voltage) is applied to both cells, allowing each cell to operate as generally described with respect to FIG3B and FIG3C , respectively, causing incident light 326 to pass through as transmitted light 327 d . Here, both the first narrowband radiation 326 - 1 ″ and the second narrowband radiation 326 - 2 ″ are substantially blocked, with these radiations being transmitted as 327 - 1 d ″ and 327 - 2 d ″, respectively, with significantly reduced intensities. Furthermore, while there may be some reduction or filtering of broadband radiation 326' , most of it advantageously passes through in the form of transmitted broadband radiation 327d' so that a user or sensor can still fully view the scene or environment without substantial distortion, as previously explained.
當單元經啟動至其較低穿透率狀態時,LP-VTOD之特徵可在於在對應峰值吸收波長下具有通常不超過10%,替代地不超過5%、3%、2%、1%、0.5%、0.2%、0.1%、0.05%、0.02%、0.01%或甚至更低之穿透率(%T DS-P)的暗化狀態。在一些情況下,%T DS-P/%T CS-P之比率可不超過0.5,替代地不超過0.4、0.3、0.2、0.1、0.05或0.02。應注意,與%T DS-P相關之值及度量可指啟動第一單元時之第一峰值吸收波長(%T DS-P1),或啟動第二單元時之第二峰值吸收波長(%T DS-P2),或啟動兩個單元時之組合峰值吸收波長。 When the cell is activated to its lower transmittance state, the LP-VTOD may be characterized by a darkened state having a transmittance (%T DS-P ) of typically no more than 10% at the corresponding peak absorption wavelength, alternatively no more than 5%, 3%, 2%, 1%, 0.5%, 0.2%, 0.1%, 0.05%, 0.02%, 0.01%, or even less. In some cases, the ratio of %T DS -P / %T CS-P may be no more than 0.5, alternatively no more than 0.4, 0.3, 0.2, 0.1, 0.05, or 0.02. It should be noted that values and metrics related to %T DS-P may refer to the first peak absorption wavelength when the first unit is activated (%T DS-P1 ), or the second peak absorption wavelength when the second unit is activated (%T DS-P2 ), or the combined peak absorption wavelength when both units are activated.
當單元經啟動至其較低穿透率狀態時,LP-VTOD在一些情況下之特徵可在於在對應峰值吸收波長下具有可為至少1.0,較佳至少1.5,更佳至少2.0、2.5、3.0、3.5、4.0或甚至更高之光密度(O.D.)的暗化狀態。在一些實施例中,在峰值吸收波長下之清透狀態透射率(%T CS-P)及暗狀態透射率(%T DS-P)之間的改變可對應於大於0.5 OD、0.75 OD、1 OD之光密度差(ΔOD)或在一些實例中大於1.5、2、2.5、3、3.5或4 OD之光密度差(ΔOD)。 When the cell is activated to its lower transmittance state, the LP-VTOD may in some cases be characterized by a darkened state having an optical density (OD) of at least 1.0, preferably at least 1.5, more preferably at least 2.0, 2.5, 3.0, 3.5, 4.0, or even higher at the corresponding peak absorption wavelength. In some embodiments, the change between the clear state transmittance (%T CS-P ) and the dark state transmittance (%T DS-P ) at the peak absorption wavelength may correspond to an optical density difference (ΔOD) greater than 0.5 OD, 0.75 OD, 1 OD, or, in some examples, greater than 1.5, 2, 2.5, 3, 3.5, or 4 OD.
在一些情況下,LP-VTOD之暗化狀態之特徵可在於至少10%,替代地至少20%、30%、40%、45%、50%、55%或60%之明視透射率PT DS。在一些情況下,PT CS比PT DS大超過20個百分比單位,替代地25個百分比單位、30個百分比單位、35個百分比單位或40個百分比單位。在一些實施例中,PT DS/PT CS之比率為至少0.25,替代地0.3、0.4、0.5、0.6或0.7。應注意,涉及PT DS之前述度量可指僅第一單元處於較低穿透率狀態時(圖3B)、僅第二單元處於較低穿透率狀態時(圖3C)或第一單元及第二單元兩者均處於較低穿透率狀態時(圖3D)的度量。 In some cases, the darkened state of the LP-VTOD can be characterized by a photopic transmittance, PT DS , of at least 10%, alternatively at least 20%, 30%, 40%, 45%, 50%, 55%, or 60%. In some cases, PT CS is greater than PT DS by more than 20 percentage units, alternatively 25 percentage units, 30 percentage units, 35 percentage units, or 40 percentage units. In some embodiments, the ratio of PT DS / PT CS is at least 0.25, alternatively 0.3, 0.4, 0.5, 0.6, or 0.7. It should be noted that the aforementioned metrics related to PT DS may refer to metrics when only the first unit is in a lower transmittance state ( FIG. 3B ), when only the second unit is in a lower transmittance state ( FIG. 3C ), or when both the first unit and the second unit are in a lower transmittance state ( FIG. 3D ).
可部分地基於需要阻擋何種窄帶輻射波長而選擇特定染料組成物。一般而言,當峰值吸收波長接近窄帶輻射峰值強度波長時,例如相差40 nm以內,較佳相差30 nm、20 nm、15 nm以內,或更佳相差10 nm以內,將出現最高阻擋。在一些實施例中,在窄帶輻射波長(其可視情況為超窄帶輻射)下,LP-VTOD可能夠提供至少1.0,較佳至少1.5,更佳至少2.0、2.5、3.0或甚至更高之光密度。The specific dye composition chosen can be based in part on which narrowband radiation wavelength is desired to be blocked. Generally speaking, the highest blocking occurs when the peak absorption wavelength is close to the narrowband radiation peak intensity wavelength, for example, within 40 nm, preferably within 30 nm, 20 nm, 15 nm, or more preferably within 10 nm. In some embodiments, at narrowband radiation wavelengths (which may include ultra-narrowband radiation), the LP-VTOD may be capable of providing an optical density of at least 1.0, preferably at least 1.5, more preferably at least 2.0, 2.5, 3.0, or even higher.
應注意,取決於LC主體是否具有負異向性,系統在施加電壓後將具吸收性(「暗」狀態),且在不施加電壓時為清透的。相反,當使用具有正異向性之LC主體時,系統在不施加電壓時將為暗的,且在施加電壓後轉變為清透的。所提供之實例及描述涵蓋使用負LC之裝置,但各系統或裝置亦可經組態以使用正LC主體(亦即,具有正介電異向性之LC)。It should be noted that, depending on whether the LC host has negative anisotropy, the system will be absorbing ("dark" state) when voltage is applied and clear when no voltage is applied. Conversely, when using an LC host with positive anisotropy, the system will be dark when no voltage is applied and transition to clear when voltage is applied. The examples and descriptions provided cover devices using negative LC, but each system or device can also be configured to use a positive LC host (i.e., LC with positive dielectric anisotropy).
圖4A至圖4B為根據一些實施例之LP-VTOD之非限制性實例的橫截面示意圖。在此實施例中,兩個單元經配置以提供窄帶吸收。LP-VTOD 410包括具有第一客體-主體混合物之第一單元 411,該第一客體-主體混合物包括負第一LC主體 422及第一染料材料,其包括正第一DC染料組成物 424。繪製主體及染料分子以說明一般定向。第一單元與具有第二客體-主體混合物之第二單元光通信,該第二客體-主體混合物包括負第二LC主體 442及第二染料材料,其包括正第二DC染料組成物 444或染料混合物。在一些情況下,第一及第二單元之主體及/或染料組成物可實質上相同。為了清楚起見,單元 411、 431之其他組件未展示,但其可視情況如關於圖1及其變化形式所描述。在一些實施例中,各單元可由提供於控制器 455中之電力電路V 1及V 2獨立控制。 在其他實施例中,在第一及第二單元上施加電壓可被共同控制。 Figures 4A and 4B are cross-sectional schematic diagrams of non-limiting examples of LP-VTODs according to some embodiments. In this embodiment, two cells are configured to provide narrowband absorption. LP-VTOD 410 includes a first cell 411 having a first guest-host mixture comprising a negative first LC host 422 and a first dye material comprising a positive first DC dye composition 424. The host and dye molecules are drawn to illustrate general orientation. The first cell is in optical communication with a second cell having a second guest-host mixture comprising a negative second LC host 442 and a second dye material comprising a positive second DC dye composition 444 or a dye mixture. In some cases, the hosts and/or dye compositions of the first and second cells can be substantially identical. For clarity, other components of cells 411 and 431 are not shown, but may be viewed as described with respect to FIG. 1 and its variations. In some embodiments, each cell may be independently controlled by power circuits V1 and V2 provided in controller 455. In other embodiments, the voltages applied to the first and second cells may be controlled jointly.
在此實施例中,第一及第二窄帶單元兩者吸收在光譜之可見區域、UV區域或IR區域內具有峰值波長之光。在一些實施例中,第一單元及第二單元分別吸收第一波長區域及第二波長區域中之光,其中第二波長區域與第一波長區域實質上相同。由第一及第二單元實質上相同吸收之波長區域可為在暗化至相同明視透射率時在相關波長區域內具有特徵在於針對各波長彼此相差10%單位以內,替代地相差5%單位以內之%T之光譜的波長區域。舉例而言,在波長區域為可見光之情況下,波長範圍為至少450至650 nm,替代地400至700 nm,替代地380至780 nm。在一些情況下,實質上相同之波長區域可包括第一峰值吸收波長與第二峰值吸收波長相差5%以內時,或第一FWHM與第二FWHM相差5%以內時或兩者之波長區域。替代地,實質上相同之波長區域可包括第一峰值吸收波長與第二峰值吸收波長相差5 nm以內時,或第一FWHM與第二FWHM相差5 nm以內時或兩者之波長區域。In this embodiment, both the first and second narrowband cells absorb light having a peak wavelength in the visible, UV, or IR regions of the optical spectrum. In some embodiments, the first cell and the second cell absorb light in a first wavelength region and a second wavelength region, respectively, wherein the second wavelength region is substantially identical to the first wavelength region. The wavelength region substantially identically absorbed by the first and second cells can be a wavelength region of the spectrum characterized by a %T within 10% units, alternatively within 5% units, for each wavelength within the relevant wavelength region when dimmed to the same photopic transmittance. For example, when the wavelength region is visible light, the wavelength range is at least 450 to 650 nm, alternatively 400 to 700 nm, or alternatively 380 to 780 nm. In some cases, the substantially identical wavelength region may include a wavelength region where the first peak absorption wavelength and the second peak absorption wavelength are within 5%, or where the first FWHM and the second FWHM are within 5%, or both. Alternatively, the substantially identical wavelength region may include a wavelength region where the first peak absorption wavelength and the second peak absorption wavelength are within 5 nm, or where the first FWHM and the second FWHM are within 5 nm, or both.
在一些實施例中,實質上相同之波長區域可針對各單元產生相差0.07單位(x及y)以內之CIE 1931 x-y色度(在單元暗化狀態下)。In some embodiments, substantially identical wavelength regions can produce CIE 1931 x-y chromaticities for each cell that are within 0.07 units (x and y) (in the cell's darkened state).
CIE 1931 x-y色度或XYZ色彩空間係指由國際照明委員會(International Commission on Illumination;CIE)創建之色度標準。在圖4A中,電力電路V 1及V 2兩者均斷開,即未在單元 411、 431中之任一者上施加電壓。第一單元及第二單元兩者均處於較高光透射狀態(其可處於或接近其最大光透射狀態),且LP-VTOD 410處於清透狀態,其可處於或接近其最大光透射狀態,其中大量入射可見光 426以透射光 427a形式穿過。入射光 426可包括寬帶光 426',其可對應於來自一般環境(例如,房間、戶外或其類似者)之通常由跨可見光譜中之一些或全部的各種波長組成之光。 The CIE 1931 xy chromaticity, or XYZ color space, refers to a colorimetric standard established by the International Commission on Illumination (CIE). In FIG4A , both power circuits V1 and V2 are disconnected, meaning no voltage is applied to either cell 411 or 431. Both the first and second cells are in a relatively high light transmission state (which may be at or near their maximum light transmission state), and the LP-VTOD 410 is in a clear state (which may be at or near its maximum light transmission state), wherein a significant amount of incident visible light 426 passes through as transmitted light 427a . Incident light 426 may include broadband light 426' , which may correspond to light from a general environment (e.g., a room, outdoors, or the like) that is typically composed of various wavelengths across some or all of the visible spectrum.
入射光 426可進一步包括在第一峰值窄帶輻射波長下具有峰值強度之窄帶輻射 426''。窄帶輻射可來自雷射或其他窄帶光源,且可具有高於寬帶光 426'之強度,例如,足以擾亂或甚至損壞個人視覺或感測器(諸如攝影機感測器)之功能。 Incident light 426 may further include narrowband radiation 426' having a peak intensity at a first peak narrowband radiation wavelength. Narrowband radiation may be from a laser or other narrowband light source and may have a higher intensity than broadband light 426' , for example, sufficient to disrupt or even damage the function of a person's vision or sensors (such as camera sensors).
在圖4B中,第一及第二單元之電力電路V 1及V 2兩者均閉合(在獨立或共同控制下),且施加高於兩個單元之足以顯著地重新定向LC主體 422、 442及DC染料組成物 424、 444之臨限電壓的電壓。第一及第二波長區域中之光吸收(其可相同)隨著電壓增加而增加。光透射可基於所施加電壓達到某一點而變化,超出該點,增加電壓具有較小效應。在圖4B中,LP-VTOD處於暗化狀態,其中第一單元 411及第二單元 431兩者在第一/第二波長區域中處於較低透光率狀態(視情況處於或接近最小光透射狀態),使得第一/第二波長區域中之入射可見光 426一些量被吸收,從而產生透射光 427b。特定言之,第一及第二單元一起阻擋大量窄帶輻射 426'',該窄帶輻射以大大減小之強度以 427b''形式傳遞。啟動第一及第二單元亦可阻擋寬帶輻射 426'中之一些,但因為該等單元具有窄帶吸收,所以大多數 426'以 427b'形式穿過,使得使用者或感測器仍可充分地查看場景或環境而無實質性失真。阻擋窄帶輻射同時仍保持場景或環境之可接受查看條件為使用者提供額外安全性,尤其係處於危險情形、操作車輛或飛機或其類似者之使用者。舉例而言,使用者或感測器可偵測窄帶輻射 426'',例如強532 nm雷射光,且(手動地或自動地)啟動單元。 In FIG4B , the power circuits V1 and V2 of the first and second cells are both closed (under independent or common control), and a voltage is applied that is higher than the threshold voltage of both cells, sufficient to significantly reorient the LC hosts 422 , 442 and the DC dye compositions 424 , 444. Light absorption in the first and second wavelength regions (which can be identical) increases as the voltage increases. Light transmission can vary based on the applied voltage up to a certain point, beyond which increasing the voltage has less effect. In Figure 4B , the LP-VTOD is in a darkened state, wherein both first unit 411 and second unit 431 are in a relatively low transmittance state (optionally at or near minimum light transmission) in the first/second wavelength region. This results in absorption of some incident visible light 426 in the first/second wavelength region, thereby generating transmitted light 427b . Specifically, the first and second units together block a significant amount of narrowband radiation 426″ , which is then transmitted at a significantly reduced intensity as 427b″ . Activating the first and second cells also blocks some of the broadband radiation 426' , but because the cells have narrowband absorption, most of 426' passes through as 427b' , allowing the user or sensor to still adequately view the scene or environment without substantial distortion. Blocking narrowband radiation while still maintaining acceptable viewing conditions for the scene or environment provides additional safety for users, particularly those in hazardous situations, operating vehicles, aircraft, or the like. For example, a user or sensor can detect narrowband radiation 426" , such as intense 532 nm laser light, and activate the cells (manually or automatically).
圖4C及圖4D為類似於圖4A及圖4B之LP-VTOD的LP-VTOD 410c之橫截面示意圖,但包括第三單元 451。在一些實施例中,第三單元 451可包括例如具有第三客體-主體混合物之寬帶電光材料,該第三客體-主體混合物包括負第三LC主體 462及第三染料組成物 464,其可包括兩種或更多種不同正DC染料。繪製主體及染料分子以說明一般定向。第三單元與該第一及第二單元光通信。在一些實施例中,第三單元可相對於第一及第二單元由控制器 455中之電力電路V 3獨立控制。如圖4C中所展示,電力電路V 3閉合,且施加高於足以顯著地重新定向LC主體 462及DC染料組成物 464之臨限電壓的電壓。第一波長區域中之光吸收隨著電壓增加而增加。光透射可基於所施加電壓達到某一點而變化,超出該點,增加電壓具有較小效應。在圖4C中,第三單元 451被描繪為處於中間暗化狀態。舉例而言,第三單元 451可對應於減小跨可見光譜中之大部分或全部之透射的電子太陽鏡。 Figures 4C and 4D are schematic cross-sectional views of an LP-VTOD 410c similar to the LP-VTOD of Figures 4A and 4B , but including a third cell 451. In some embodiments, third cell 451 may comprise, for example, a broadband electro-optical material having a third guest-host mixture comprising a negative third LC host 462 and a third dye composition 464 , which may include two or more different positive DC dyes. The host and dye molecules are depicted to illustrate general orientation. The third cell is in optical communication with the first and second cells. In some embodiments, the third cell may be controlled independently of the first and second cells by a power circuit V3 in controller 455 . As shown in FIG4C , power circuit V3 is closed, and a voltage is applied that is above the threshold voltage sufficient to significantly reorient LC host 462 and DC dye composition 464. Light absorption in the first wavelength region increases as the voltage increases. Light transmission can vary based on the applied voltage up to a point, beyond which increasing the voltage has little effect. In FIG4C , third cell 451 is depicted in an intermediate darkened state. For example, third cell 451 could correspond to an electronic sunglass that reduces transmission across most or all of the visible spectrum.
參考圖4C,電力電路V 1及V 2斷開,即未在單元 411、 431中之任一者上施加電壓。第一單元及第二單元兩者均處於較高光透射狀態(其可處於或接近其最大光透射狀態),而第三單元 451處於中間暗化狀態。入射於LP-VTOD 410c上之大量入射光 426c穿過第一及第二單元,但由第三單元部分吸收以產生透射光 427c。入射光 426c可包括寬帶光 426c',其可對應於來自一般環境(例如,房間、戶外或其類似者)、通常由跨可見光譜中之一些或全部的各種波長組成、被部分吸收且以 427c'形式透射之光。在一些情況下,第三單元在其光吸收方面可為色度中性的,且並不向所透射之寬帶光 427c'賦予相對於 426c'之明顯色調。色度中性狀態可表徵為具有中性及低色彩色度兩者。 Referring to FIG4C , power circuits V1 and V2 are disconnected, i.e., no voltage is applied to either cell 411 or 431. Both the first and second cells are in a relatively high light-transmitting state (which may be at or near their maximum light-transmitting state), while the third cell 451 is in an intermediate, darkened state. A substantial amount of incident light 426c incident on LP-VTOD 410c passes through the first and second cells but is partially absorbed by the third cell, producing transmitted light 427c . Incident light 426c may include broadband light 426c′ , which may correspond to light from a typical environment (e.g., a room, outdoors, or the like) typically composed of various wavelengths across some or all of the visible spectrum, which is partially absorbed and transmitted as 427c′ . In some cases, the third cell may be colorimetrically neutral in its light absorption and impart no noticeable color hue to the transmitted broadband light 427c' relative to 426c' . The colorimetrically neutral state may be characterized as having both neutral and low color chromaticity.
參考圖4D,入射光 426d可包括寬帶光 426d'及窄帶輻射 426d''兩者。在操作期間,感測器或使用者可偵測窄帶輻射 426d'',例如,強532 nm雷射光,且(手動地或自動地)啟動第一單元 411及第二單元 431以使其處於如在別處所描述之其較低透射率狀態。此可實質上減小所透射之窄帶輻射 427d''的強度。儘管可存在寬帶輻射 426d'之某一額外減小或濾波(除由單元 451引起之有意調光以外),但所透射之寬帶輻射 427d'係充足的,使得使用者或感測器可仍充分地查看場景或環境而無實質失真,如先前所解釋。在一些實施例中,偵測窄帶輻射可進一步使得寬帶單元 451改變所施加電壓V 3,使得其可進一步暗化或替代地變得不太暗。 Referring to FIG. 4D , incident light 426d may include both broadband light 426d′ and narrowband radiation 426d″ . During operation, a sensor or user may detect narrowband radiation 426d″ , such as intense 532 nm laser light, and (manually or automatically) activate first unit 411 and second unit 431 to their lower transmittance states as described elsewhere. This may substantially reduce the intensity of transmitted narrowband radiation 427d″ . Although there may be some additional reduction or filtering of broadband radiation 426d' (in addition to the intentional dimming caused by cell 451 ), the transmitted broadband radiation 427d' is sufficient so that a user or sensor can still adequately view the scene or environment without substantial distortion, as previously explained. In some embodiments, detecting narrowband radiation can further cause broadband cell 451 to change the applied voltage V3 so that it can be further dimmed or alternatively made less dim.
為了進一步說明寬帶及窄帶單元可如何一起使用,圖5展示根據一些實施例之一組透光率光譜。透射光譜 561可對應於LP-VTOD 410c之清透狀態,其中所有三個單元( 411、 431及 451)均處於其較高穿透率狀態。在一些情況下,透射光譜 561可視情況為色度中性的,或具有如此處所展示的低色彩色度。透射光譜 563可對應於啟動第一及第二窄帶單元( 411、 431)以使其處於較低穿透率狀態,而第三寬帶單元 451保持處於較高穿透率狀態。可使用此狀態例如以吸收特定雷射光(諸如綠色,如此處所說明,或某另一雷射光)。透射光譜 565對應於如先前所描述之由第三寬帶單元 451產生之暗化狀態。此暗化狀態可視情況為色度中性第一或第二暗化狀態(或低色彩色度),或甚至為色度中性的,或具有低色彩色度。當LP-VTOD如圖4C中所展示時,可例如產生透射光譜 565。透射光譜 567對應於暗著色狀態,其中所有三個單元均處於較低透射率狀態。暗著色狀態可用於抵禦雷射光,同時亦向使用者提供在除雷射波長以外的波長區域中之減小的總透光率。 To further illustrate how wideband and narrowband units can be used together, FIG5 shows a set of transmittance spectra according to some embodiments. Transmission spectrum 561 may correspond to the clear state of LP-VTOD 410c , in which all three units ( 411 , 431 , and 451 ) are in their higher transmittance states. In some cases, transmission spectrum 561 may be colorimetrically neutral, or have low color chromaticity as shown here. Transmission spectrum 563 may correspond to activating the first and second narrowband units ( 411 , 431 ) to their lower transmittance states, while the third wideband unit 451 remains in its higher transmittance state. This state can be used, for example, to absorb a particular laser light (e.g., green, as described here, or some other laser light). Transmission spectrum 565 corresponds to the darkened state produced by the third wideband unit 451 as previously described. This darkened state can be a chromatically neutral first or second darkened state (or low color chroma), or even chromatically neutral, or with low color chroma, depending on the situation. Transmission spectrum 565 can be produced, for example, when the LP-VTOD is as shown in FIG4C. Transmission spectrum 567 corresponds to a darkened state, in which all three units are in a lower transmittance state. The darkened state can be used to block laser light while also providing the user with reduced total transmittance in wavelength regions other than the laser wavelength.
轉向圖6,在一些實施例中,當入射光 426c(或寬帶輻射 426c')為照明體C光時,透射光 427c可具有落入CIE 1931 x-y色度圖 600之中性區域 602的色度。在孟色耳色系(Munsell color system)中,中性區域 602對應於孟色耳色度值(Munsell value)為5時之相等色度2位點(中性區域 602在本文中可簡稱為孟色耳色度值5時之色度2)。在孟色耳色系中,在照明體C下,孟色耳「色度值5」 與約20%之「視感反射率Y當量(百分比形式)」相關聯。應進一步注意,中性區域 602亦類似於用於遮光(light-darkening)護目鏡之一些軍事規範的中性區域(例如,參見2018年9月11日出版之MIL-PRF-32432A之圖1,其全部內容出於所有目的以引用之方式併入本文中)。 Turning to FIG. 6 , in some embodiments, when incident light 426c (or broadband radiation 426c′ ) is illuminant C light, transmitted light 427c may have a chromaticity falling within the neutral region 602 of the CIE 1931 xy chromaticity diagram 600. In the Munsell color system, the neutral region 602 corresponds to the equivalent chromaticity 2 point at a Munsell chromaticity value of 5 (neutral region 602 may be referred to herein as chromaticity 2 at Munsell chromaticity value 5). In the Munsell color system, under illuminant C, a Munsell chromaticity value of 5 is associated with a visual reflectance Y equivalent (percentage) of approximately 20%. It should be further noted that the neutral region 602 is also similar to the neutral region of some military specifications for light-darkening goggles (e.g., see FIG. 1 of MIL-PRF-32432A, published September 11, 2018, the entire contents of which are incorporated herein by reference for all purposes).
儘管未展示,但可使用兩個或更多個單元,而非僅使用用於調光寬帶輻射之單個單元 451,例如,如以引用之方式併入本文中的美國非臨時專利申請案18/369,843中所描述。 Although not shown, two or more cells may be used instead of just a single cell 451 for dimming broadband radiation, for example, as described in U.S. Non-Provisional Patent Application No. 18/369,843, which is incorporated herein by reference.
在一些情況下,為了偵測入射於LP-VTOD上或附近之窄帶輻射,可將感測器添加至LP-VTOD自身或添加至可支撐單元之框架或外殼或可設置於某另一位置。舉例而言,若LP-VTOD正由飛行員使用,則飛機或擋風玻璃可容納感測器。感測器可提供於由LP-VTOD使用者操作之任何車輛或甚至一件衣物或裝備上。感測器可與LP-VTOD控制器有線或無線通信。感測器可為光感測器。替代地,感測器可偵測指示附近之雷射使用的次級電磁特徵。In some cases, to detect narrowband radiation incident on or near the LP-VTOD, a sensor may be added to the LP-VTOD itself, to a frame or housing that may support the unit, or to some other location. For example, if the LP-VTOD is being used by a pilot, the aircraft or windshield may house the sensor. The sensor may be provided on any vehicle operated by the LP-VTOD user or even on a piece of clothing or equipment. The sensor may communicate with the LP-VTOD controller either wired or wirelessly. The sensor may be a light sensor. Alternatively, the sensor may detect a secondary electromagnetic signature that indicates the use of a nearby laser.
在一些實施例中,LP-VTOD可包括額外可變透射光學裝置或與該光學裝置介接。舉例而言,LP-VTOD可包括額外單元,其為寬帶VTOD、窄帶VTOD、光致變色裝置、電致變色裝置或可包括PC染料及/或PCDC染料之混合式VTOD。In some embodiments, the LP-VTOD may include or interface with additional variable transmission optics. For example, the LP-VTOD may include additional units that are wideband VTODs, narrowband VTODs, photochromic devices, electrochromic devices, or hybrid VTODs that may include PC dyes and/or PCDC dyes.
在一些實施例中,LP-VTOD之一個單元可包括具有右旋對掌性之LC主體,且LP-VTOD之另一單元可包括具有左旋對掌性之LC主體。在一些實施例中,兩個單元之光吸收曲線可具有顯著重疊。藉由改變LC之偏手性,可進一步減小重疊區域中之偏振相依性(儘管在本客體-主體系統中通常較小),此可導致有益的透射擺動增加。在重疊在可見光譜之綠色區域(其中人眼具有最高靈敏度)中,例如在藍色/黃橙色及紅色/青色之第一/第二單元組合中之情況下,此效應可最強。In some embodiments, one cell of the LP-VTOD may include an LC host with right-handed chirality, and the other cell of the LP-VTOD may include an LC host with left-handed chirality. In some embodiments, the light absorption curves of the two cells may have significant overlap. By varying the chirality of the LC, the polarization dependence in the overlapping region (although typically small in this guest-host system) can be further reduced, which can lead to a beneficial increase in transmission swing. This effect can be strongest in the case of overlap in the green region of the visible spectrum (where the human eye has highest sensitivity), such as in the blue/yellow-orange and red/cyan first/second cell combinations.
主體材料之對掌性產生液晶主體材料之固有間距p。單元間隙厚度d與此間距之比率稱為d/p。在一些實施例中,液晶主體之d/p可等於0。在一些實施例中,液晶主體之d/p可大於0。在具有低d/p及雙折射率之一些實施例中,稱為「 在摩幹極限下 ( In the Mauguin limit)」,光之偏振遵循液晶之偏振。替代地,不在摩幹極限下之裝置的光傳播本徵模式為橢圓形的。在一些情況下,主體液晶可使得裝置具有較小偏振敏感,亦即,小於90%、80%、70%、60%、50%、40%、30%、20%或10%之偏振敏感。 The chirality of the host material gives rise to an intrinsic spacing p of the liquid crystal host material. The ratio of the cell gap thickness d to this spacing is referred to as d/p. In some embodiments, the d/p of the liquid crystal host can be equal to 0. In some embodiments, the d/p of the liquid crystal host can be greater than 0. In some embodiments with low d/p and birefringence, referred to as " in the Mauguin limit ," the polarization of light follows the polarization of the liquid crystal. Alternatively, the light propagation eigenmode of the device that is not in the Mauguin limit is elliptical. In some cases, the host liquid crystal can cause the device to have a relatively low polarization sensitivity, i.e., less than 90%, 80%, 70%, 60%, 50%, 40%, 30%, 20%, or 10% polarization sensitivity.
在一些實施例中,LP-VTOD之單元的厚度與間距比率(d/p)可為至少0.01,替代地至少0.1、0.2、0.3、0.4或0.5。在一些實施例中,d/p小於或等於3.0,或替代地小於或等於2或1。在一些實施例中,d/p可在0.01至0.2、0.2至0.3、0.3至0.4、0.4至0.5、0.5至0.6、0.6至0.7、0.7至0.8、0.8至0.9、0.9至1.0、1.0至1.5、1.5至2.0、2.0至2.5、2.5至3.0或其範圍之任何組合的範圍內。In some embodiments, the thickness to pitch ratio (d/p) of a cell of the LP-VTOD may be at least 0.01, alternatively at least 0.1, 0.2, 0.3, 0.4, or 0.5. In some embodiments, d/p is less than or equal to 3.0, or alternatively less than or equal to 2 or 1. In some embodiments, d/p may be in the range of 0.01 to 0.2, 0.2 to 0.3, 0.3 to 0.4, 0.4 to 0.5, 0.5 to 0.6, 0.6 to 0.7, 0.7 to 0.8, 0.8 to 0.9, 0.9 to 1.0, 1.0 to 1.5, 1.5 to 2.0, 2.0 to 2.5, 2.5 to 3.0, or any combination thereof.
在一些實施例中,LP-VTOD可使用塑膠基板,該等塑膠基板具有在裝置之整個區域之均勻性上變化小於±20%,替代地小於±15%或小於±10%的光阻滯。In some embodiments, LP-VTODs may use plastic substrates having photoresist that varies less than ±20% in uniformity across the area of the device, alternatively less than ±15% or less than ±10%.
在一些實施例中,LP-VTOD之單元可具有在3至5微米、5至7微米、7至10微米、10至15微米、15至20微米、20至25微米、25至30微米、30至35微米、35至40微米或40至50微米或其範圍之任何組合之範圍內的個別選擇之單元間隙。In some embodiments, cells of the LP-VTOD may have individually selected cell gaps within the range of 3-5 microns, 5-7 microns, 7-10 microns, 10-15 microns, 15-20 microns, 20-25 microns, 25-30 microns, 30-35 microns, 35-40 microns, or 40-50 microns, or any combination of ranges thereof.
在一些實施例中,客體-主體混合物具有大於40℃之向列-等向性轉變溫度TNI。在其他實施例中,TNI大於45℃、50℃、55℃、60℃、65℃、70℃、75℃、80℃、85℃或90℃。In some embodiments, the guest-host mixture has a nematic-isotropic transition temperature, TNI, greater than 40° C. In other embodiments, the TNI is greater than 45° C., 50° C., 55° C., 60° C., 65° C., 70° C., 75° C., 80° C., 85° C., or 90° C.
混合物之有序參數可藉由使用在吸收光譜內及外兩者之若干波長下之線性及/或圓偏振光對處於靜置及通電狀態之光透射進行光學量測來測定。接著,使用諸如由Berreman(Berreman D. W. 1972, Optics in Stratified and Anisotropic Media: 4×4-Matrix Formulation. Journal of the Optical Society of America, 62(4), 502)或Odano(Allia, P.、Oldano, G.及Trossi, L., 1986, 4×4 Matrix approach to chiral liquid-crystal optics. Journal of the Optical Society of America B, 3(3), 424)開發之液晶光學模擬方法,有序參數可藉由數值擬合至實驗資料來測定。此等模擬方法由熟習此項技術者使用或經由商業程式,諸如Kelly之Twisted Cell Optics(Kelly, J.、Jamal, S.及Cui, M., 1999, Simulation of the dynamics of twisted nematic devices including flow. Journal of Applied Physics, 86(8), 4091)使用。The order parameter of the mixture can be determined by optical measurements of the light transmission in the rest and energized states using linearly and/or circularly polarized light at several wavelengths both inside and outside the absorption spectrum. The order parameter can then be determined by numerically fitting the experimental data using liquid crystal optical simulation methods such as those developed by Berreman (Berreman D. W. 1972, Optics in Stratified and Anisotropic Media: 4×4-Matrix Formulation. Journal of the Optical Society of America, 62(4), 502) or Odano (Allia, P., Oldano, G., and Trossi, L., 1986, 4×4 Matrix approach to chiral liquid-crystal optics. Journal of the Optical Society of America B, 3(3), 424). These simulation methods are used by those skilled in the art or through commercial programs such as Kelly's Twisted Cell Optics (Kelly, J., Jamal, S., and Cui, M., 1999, Simulation of the dynamics of twisted nematic devices including flow. Journal of Applied Physics, 86(8), 4091).
在一些實施例中,LP-VTOD之一個或多個單元包括在大於或等於0.65、0.7、0.71、0.72、0.73、0.74、0.75、0.76、0.77或0.78,替代地大於或等於0.79或0.80之峰值吸收波長下具有有序參數S mix之客體-主體混合物。 應用 In some embodiments, one or more units of the LP-VTOD include a guest-host mixture having an order parameter Smix at a peak absorption wavelength greater than or equal to 0.65, 0.7, 0.71, 0.72, 0.73, 0.74, 0.75, 0.76, 0.77 , or 0.78, alternatively greater than or equal to 0.79 or 0.80.
LP-VTOD具有多種潛在用途。舉例而言,此等裝置可直接製造成「穿戴式」產品或層壓至「穿戴式」產品上,該等「穿戴式」產品為諸如眼鏡(諸如處方及非處方眼鏡及太陽鏡)、遮陽板、護目鏡、面罩、近眼顯示器、感測器光學器件、攝影機及AR/VR頭戴式套件(僅舉幾例)。替代地,其可直接製造成其他產品或層壓至其他產品上,該等產品包括但不限於窗(車輛、建築物、飛機等)、擋風玻璃、天窗、抬頭顯示器、攝影機濾波器及光學儀器。此等產品及裝置可進一步配備有電源、電池、感測器或其類似物。在一些實施例中,一個或多個感測器可提供用於LP-VTOD之操作中的資訊或資料。感測器之一些非限制性實例包括光感測器、成像感測器及雷射警告接收器。LP-VTODs have a variety of potential applications. For example, these devices can be manufactured directly into or laminated onto "wearable" products such as eyewear (prescription and over-the-counter glasses and sunglasses), visors, goggles, face shields, near-eye displays, sensor optics, cameras, and AR/VR headsets (to name a few). Alternatively, they can be manufactured directly into or laminated onto other products, including but not limited to windows (for vehicles, buildings, aircraft, etc.), windshields, sunroofs, head-up displays, camera filters, and optical instruments. These products and devices may further be equipped with a power supply, battery, sensor, or the like. In some embodiments, one or more sensors may provide information or data used in the operation of the LP-VTOD. Some non-limiting examples of sensors include light sensors, imaging sensors, and laser warning receivers.
在一些實施例中,LP-VTOD之一個或多個單元可劃分成離散可個別定址區域以允許LP-VTOD之不同區域顯示不同狀態。在一些情況下,此等區域可藉由將透明導電層圖案化來形成,視情況與隔板組合以將電光材料分離成單元內之不同子單元。 實例實施例 In some embodiments, one or more cells of an LP-VTOD can be divided into discrete, individually addressable regions to allow different regions of the LP-VTOD to display different states. In some cases, these regions can be formed by patterning a transparent conductive layer, optionally combined with spacers to separate the electro-optical material into different sub-cells within the cell. Example Embodiments
LP-VTOD可根據類似於本文所描述之協定的協定來製造。各單元可使用塗覆有氧化銦錫(ITO)(透明導體)之3 mil聚碳酸酯之等向性基板來製造。在ITO之頂部上,可塗佈聚醯亞胺塗層,例如Nissa 5661(Nissan Chemical Industries, Ltd., Tokyo, Japan)。此聚醯亞胺塗層可充當經設計以誘發液晶分子之強垂直對準的配向層。可將例如6.2微米之塑膠球體噴灑至基板中之一者上以充當間隔物。可在基板中之一者的周邊周圍塗佈UV可固化黏著劑之薄珠粒,例如Loctite 3106(Henkel AG & Co. KGaA, Dusseldorf, Germany),從而留下將充當填充埠之間隙。兩個基板經裝配,抵靠間隔物按壓在一起以在基板之間產生均勻間隙,且接著暴露於UV光以固化該黏著劑。LP-VTODs can be fabricated according to protocols similar to those described herein. Each cell can be fabricated using an isotropic substrate of 3 mil polycarbonate coated with indium tin oxide (ITO), a transparent conductor. On top of the ITO, a polyimide coating, such as Nissa 5661 (Nissan Chemical Industries, Ltd., Tokyo, Japan), can be applied. This polyimide coating acts as an alignment layer designed to induce strong vertical alignment of the liquid crystal molecules. Plastic spheres, such as 6.2 micron spheres, can be sprayed onto one of the substrates to act as spacers. A thin bead of UV-curable adhesive, such as Loctite 3106 (Henkel AG & Co. KGaA, Dusseldorf, Germany), can be applied around the perimeter of one of the substrates, leaving a gap that will serve as the fill port. The two substrates are assembled, pressed together against spacers to create a uniform gap between the substrates, and then exposed to UV light to cure the adhesive.
可製備第一單元及第二單元之適當客體-主體混合物。可使用光學清透壓敏黏著劑將單元層壓在一起。各單元可個別地連接至可用於施加例如60 Hz之方波電壓的驅動電路系統。替代地,單元可共同連接至驅動電路系統,使得可在兩個單元上施加共同電壓。An appropriate guest-host mixture of the first and second cells can be prepared. The cells can be laminated together using an optically clear, pressure-sensitive adhesive. Each cell can be individually connected to a driver circuit that can be used to apply, for example, a 60 Hz square wave voltage. Alternatively, the cells can be connected together to the driver circuitry so that a common voltage can be applied to both cells.
建構LP-VTOD,其中第一單元及第二單元在其總體設計及化學組成物方面實質上相同。各單元填充有LC-染料混合物AMI # 905NC(AlphaMicron, Inc., Kent OH)。DC染料組成物包括具有窄帶光吸收部分(其具有表1中所展示之特性)之BODIPY(硼二吡咯亞甲基)染料。第一及第二單元具有約522 nm之峰值吸收波長。一些電光性質在表1及圖7中報告。
表1.
圖7展示LP-VTOD之光密度在0 V下(清透狀態;虛線)及16 V下(暗化狀態,實線)隨波長而變化之標繪圖。根據此等光譜,明視透射率(PT%)可經計算且在表1中報告。峰值吸收波長(522 nm)及附近共同雷射波長(532 nm)下之光密度亦在表1中報告。吾人可看到,在522 nm及甚至532 nm下,可藉由LP-VTOD達成光密度之顯著增加(%T減小),同時仍維持高明視透射率。此部分歸因於處於其減少透射狀態之染料組成物之低FWHM僅為約49 nm。應注意,即使在清透狀態下,LP-VTOD亦具有約522 nm之某一光吸收。儘管此可賦予輕微洋紅色色調,但在許多應用中,此將為不適宜的。必要時,此清透狀態色調可至少部分地藉由將互補光吸收特徵,例如非二色性染料或顏料混合物添加至電光混合物或以單獨層形式添加至LP-VTOD來校正。Figure 7 shows plots of the optical density of the LP-VTOD as a function of wavelength at 0 V (clear state; dashed line) and 16 V (dark state, solid line). Based on these spectra, the photopic transmittance (PT%) can be calculated and reported in Table 1. The optical density at the peak absorption wavelength (522 nm) and the nearby common laser wavelength (532 nm) is also reported in Table 1. It can be seen that at 522 nm and even 532 nm, a significant increase in optical density (%T decrease) can be achieved with the LP-VTOD while still maintaining high photopic transmittance. This is due in part to the low FWHM of the dye composition in its reduced transmittance state, which is only approximately 49 nm. It should be noted that even in the clear state, the LP-VTOD has some absorption of light around 522 nm. Although this can impart a slight magenta tint, in many applications this would be undesirable. If necessary, this clear state tint can be at least partially corrected by adding complementary light absorbing features, such as non-dichroic dyes or pigments, to the electro-optical mixture or as a separate layer to the LP-VTOD.
本文中之又其他實施例包括以下所列舉實施例。 所列舉實施例1. 一種雷射保護可變透射光學裝置(「LP-VTOD」),其包括: 一第一單元,其包括提供於一第一對基板之間的一第一電光材料,其中在施加於該第一電光材料上之一第一電場之一改變後,該第一電光材料能夠在一第一波長區域中自一較高透光率狀態改變為一較低透光率狀態,且其中該第一單元之特徵在於具有一第一峰值吸收波長及一第一FWHM為175 nm或更小之一窄帶吸收;及 一第二單元,其與該第一單元光通信,該第二單元包括提供於一第二對基板之間的一第二電光材料,其中在施加於該第二電光材料上之一第二電場之一改變後,該第二電光材料能夠在一第二波長區域中自一較高透光率狀態改變為一較低透光率狀態,且其中該第二單元之特徵在於具有一第二峰值吸收波長及一第二FWHM為175 nm或更小的一窄帶吸收, 其中對於穿過該LP-VTOD之光,該LP-VTOD能夠自一清透狀態切換至一暗化狀態,對於該第一峰值吸收波長或該第二峰值吸收波長中之至少一者,該暗化狀態具有等於或低於10%之一暗化狀態穿透率%T DS-P。 所列舉實施例2. 如實施例1之LP-VTOD,其中該第一峰值吸收波長與該第二峰值吸收波長不同。 所列舉實施例3. 如實施例1或2之LP-VTOD,其中該第一電光材料包括一第一LC主體及一第一DC染料組成物,該第二電光材料包括一第二LC主體及一第二DC染料組成物,且該第二DC染料組成物不同於該第一DC染料組成物。 所列舉實施例4. 如實施例1至3中任一項之LP-VTOD,其中該第一電光材料包括具有一窄或超窄帶吸收之一第一窄帶客體-主體液晶混合物,該第二電光材料包括具有一窄或超窄帶吸收之一第二窄帶客體-主體液晶混合物,且該第二窄帶客體-主體液晶混合物不同於該第一窄帶客體-主體液晶混合物。 所列舉實施例5. 如實施例4之LP-VTOD,其中該第一窄帶客體-主體液晶混合物及該第二窄帶客體-主體液晶混合物具有選自以下之一不同光學性質:峰值吸收波長、FWHM吸收帶、總吸收率或其一組合。 所列舉實施例6. 如實施例1之LP-VTOD,其中該第一峰值吸收波長與該第二峰值吸收波長實質上相同,視情況其中該第二峰值吸收波長與該第一峰值吸收波長相差5%以內,或視情況其中該第二峰值吸收波長與該第一峰值吸收波長相差5 nm以內。 所列舉實施例7. 如實施例1或6之LP-VTOD,其中該第一電光材料包括一第一LC主體及一第一DC染料組成物,該第二電光材料包括一第二LC主體及一第二DC染料組成物,且該第二DC染料組成物與該第一DC染料組成物實質上相同。 所列舉實施例8. 如實施例1、6或7中任一項之LP-VTOD,其中該第一電光材料包括具有一窄或超窄帶吸收之一第一窄帶客體-主體液晶混合物,該第二電光材料包括具有一窄或超窄帶吸收之一第二窄帶客體-主體液晶混合物,且該第二窄帶客體-主體液晶混合物與該第一窄帶客體-主體液晶混合物實質上相同。 所列舉實施例9. 如實施例8之LP-VTOD,其中該第一窄帶客體-主體液晶混合物及該第二窄帶客體-主體液晶混合物具有選自以下之一實質上相同的光學性質:峰值吸收波長、FWHM吸收帶、總吸收率或其一組合。 所列舉實施例10. 如實施例1至9中任一項之LP-VTOD,其中該第一峰值吸收波長及該第二峰值吸收波長係獨立地選自以下範圍:100至380 nm、380至780 nm、780至1300 nm、1300至3000 nm,或3000 nm至1 mm。 所列舉實施例11. 如實施例1至10中任一項之LP-VTOD,其中該第一峰值吸收波長或該第二峰值吸收波長在380至780 nm之一範圍內。 所列舉實施例12. 如實施例1至11中任一項之LP-VTOD,其中該第一峰值吸收波長及該第二峰值吸收波長均在380至780 nm,或視情況400至700 nm之一範圍內。 所列舉實施例13. 如實施例1至12中任一項之LP-VTOD,其中該清透狀態對於至少一個峰值吸收波長具有至少20%,或視情況至少40%之一清透狀態穿透率%T CS-P。 所列舉實施例14. 如實施例1至13中任一項之LP-VTOD,其中在該第一峰值吸收波長及該第二峰值吸收波長中之每一者下,該LP-VTOD能夠自具有至少20%,或視情況至少40%之一%T CS-P的一清透狀態切換至具有不超過2.0%,或視情況不超過1.0%之一%T DS-P的一暗化狀態。 所列舉實施例15. 如實施例1至14中任一項之LP-VTOD,其中對於該第一峰值吸收波長或該第二峰值吸收波長中之至少一者,該清透狀態與該暗化狀態之間的切換對應於至少1.0之一光密度變化ΔOD。 所列舉實施例16. 如實施例15之LP-VTOD,其中ΔOD為至少1.5,或視情況至少2.0。 所列舉實施例17. 如實施例1至16中任一項之LP-VTOD,其中該清透狀態之特徵在於至少40%,或視情況至少60%之一明視透射率PT CS,且該暗化狀態之特徵在於至少10%,或視情況至少20%之一明視透射率PT DS。 所列舉實施例18. 如實施例17之LP-VTOD,其中PT CS比PT DS大超過20個百分比單位,或視情況超過30個百分比點。 所列舉實施例19. 如實施例17或18之LP-VTOD,其中PT DS/PT CS之一比率為至少0.25,或視情況至少0.35,或視情況至少0.5。 所列舉實施例20. 如實施例1至19中任一項之LP-VTOD,其中該暗化狀態之特徵在於在532 nm下量測之至少2.0之一光密度,或視情況在532 nm下量測之至少2.5之一光密度。 所列舉實施例21. 如實施例1至20中任一項之LP-VTOD,其中該第一FWHM及該第二FWHM中之至少一者為88 nm或更小,或視情況為80 nm或更小,或視情況為70 nm或更小,或視情況為60 nm或更小。 所列舉實施例22. 如實施例1至21中任一項之LP-VTOD,其中該第一單元包括一第一配向層,且該第二單元包括一第二配向層,且其中該第一配向層之一定向相對於該第二配向層之一定向旋轉70至110度。 所列舉實施例所列舉實施例23. 如實施例1至22中任一項之LP-VTOD,其中該第一單元經組態以相比於一第二偏振光更大程度地吸收一第一偏振光,且該第二單元經組態以相比於該第一偏振光更大程度地吸收該第二偏振光,其中該第二偏振光實質上正交於該第一偏振光。 所列舉實施例24. 如實施例1至23中任一項之LP-VTOD,其進一步包括與該第一單元及該第二單元光通信之一第三單元,該第三單元包括提供於一第三對基板之間的一第三電光材料,其中在施加於該第三電光材料上之一第三電場之一改變後,該第三電光材料能夠在一第三波長區域中自一較高透光率狀態改變為一較低透光率狀態。 所列舉實施例25. 如實施例24之LP-VTOD,其中該第三單元之特徵在於具有一第三峰值吸收波長及一第三FWHM為175 nm或更小的一窄帶吸收。 所列舉實施例26. 如實施例25之LP-VTOD,其中該第三FWHM為88 nm或更小,或視情況80 nm或更小。 所列舉實施例27. 如實施例25或26之LP-VTOD,其中該第三峰值吸收波長在380 nm至780 nm之一範圍內。 所列舉實施例28. 如實施例25或26之LP-VTOD,其中該第三峰值吸收波長在100至380 nm或780 nm至1 mm之一範圍內。 所列舉實施例29. 如實施例24之LP-VTOD,其中該第三單元之特徵在於具有一第三FWHM為大於175 nm的一寬帶吸收。 所列舉實施例30. 如實施例29之LP-VTOD,其中該第三單元之該較低透光率狀態具有一明視透射率,該明視透射率比該第三單元之該較高透光率狀態的一明視透射率低至少20%,或視情況至少40%。 所列舉實施例31. 如實施例29或30之LP-VTOD,其中該第三單元之該較低透光率狀態為色度中性的。 所列舉實施例32. 如實施例24至31中任一項之LP-VTOD,其進一步包括與該第一單元、該第二單元及該第三單元光通信之一第四單元,該第四單元包括提供於一第四對基板之間的一第四電光材料,其中在施加於該第四電光材料上之一第四電場之一改變後,該第四電光材料能夠在一第四波長區域中自一較高透光率狀態改變為一較低透光率狀態。 所列舉實施例33. 如實施例32之LP-VTOD,其中該第四單元之特徵在於具有一第四FWHM為大於175 nm的一寬帶吸收。 所列舉實施例34. 如實施例32或33之LP-VTOD,其中該第三單元及該第四單元在其相應較低透光率狀態下協作地操作以產生一組合之明視透射率,該組合之明視透射率比在該第三單元及該第四單元處於其相應高光透射狀態下時產生的一明視透射率低至少20%,視情況低至少40%。 所列舉實施例35. 如實施例34之LP-VTOD,其中該組合之明視透射率為色度中性的。 所列舉實施例36. 一種製品,其包括如實施例1至35中任一項之LP-VTOD,其中該製品包括一攝影機濾光器、眼鏡、一遮陽板、護目鏡、一面罩、一AR/VR頭戴式套件、一近眼顯示器、一窗、一擋風玻璃、一天窗、一抬頭顯示器或一光學儀器。 所列舉實施例37. 一種操作如實施例1至29中任一項之LP-VTOD裝置的方法,該方法包括改變該第一電場以將該第一單元自一較高透光率狀態切換至一較低透光率狀態。 所列舉實施例38. 如實施例37之方法,其進一步包括改變該第二電場以將該第二單元自一較高透光率狀態切換至一較低透光率狀態。 所列舉實施例39. 如實施例38之方法,其中該第一電場及該第二電場經獨立控制。 所列舉實施例40. 如實施例38之方法,其中該第一電場及該第二電場經共同控制。 所列舉實施例41. 如實施例37至40中任一項之方法,其進一步包括由一感測器偵測入射於該LP-VTOD上或該LP-VTOD附近之雷射光的存在,其中該感測器提供為與該LP-VTOD有線或無線通信。 所列舉實施例42. 如實施例41之方法,其中感測觸發該第一電場或該第二電場中之一者或兩者改變。 所列舉實施例43. 如實施例1至35中任一項之LP-VTOD,其進一步包含安置於該第一單元與該第二單元之間的一偏振旋轉器,視情況其中該偏振旋轉器包含一半波板或一四分之一波板。 Still other embodiments herein include the following. Example 1. A laser protected variable transmission optical device ("LP-VTOD") comprising: a first unit comprising a first electro-optical material provided between a first pair of substrates, wherein upon a change in a first electric field applied to the first electro-optical material, the first electro-optical material is capable of changing from a higher transmittance state to a lower transmittance state in a first wavelength region, and wherein the first unit is characterized by having a first peak absorption wavelength and a first FWHM of 175°C. nm or less; and a second unit in optical communication with the first unit, the second unit comprising a second electro-optical material provided between a second pair of substrates, wherein the second electro-optical material is capable of changing from a higher transmittance state to a lower transmittance state in a second wavelength region upon a change in a second electric field applied to the second electro-optical material, and wherein the second unit is characterized by having a second peak absorption wavelength and a narrowband absorption with a second Full Width At Half Maximum (FWHM) of 175 nm or less, wherein for light passing through the LP-VTOD, the LP-VTOD is capable of switching from a clear state to a darkened state, the darkened state having a darkened state transmittance %T DS-P equal to or less than 10% for at least one of the first peak absorption wavelength or the second peak absorption wavelength. Example 2. The LP-VTOD of Example 1, wherein the first peak absorption wavelength is different from the second peak absorption wavelength. Example 3. The LP-VTOD of Example 1 or 2, wherein the first electro-optical material comprises a first LC host and a first DC dye composition, the second electro-optical material comprises a second LC host and a second DC dye composition, and the second DC dye composition is different from the first DC dye composition. Example 4. The LP-VTOD of any one of Examples 1 to 3, wherein the first electro-optical material comprises a first narrow-band guest-host liquid crystal mixture having a narrow or ultra-narrow-band absorption, the second electro-optical material comprises a second narrow-band guest-host liquid crystal mixture having a narrow or ultra-narrow-band absorption, and the second narrow-band guest-host liquid crystal mixture is different from the first narrow-band guest-host liquid crystal mixture. Example 5. The LP-VTOD of Example 4, wherein the first narrowband guest-host liquid crystal mixture and the second narrowband guest-host liquid crystal mixture have different optical properties selected from one of the following: peak absorption wavelength, full width half maximum (FWHM) absorption band, total absorptivity, or a combination thereof. Example 6. The LP-VTOD of Example 1, wherein the first peak absorption wavelength and the second peak absorption wavelength are substantially the same, optionally wherein the second peak absorption wavelength differs from the first peak absorption wavelength by less than 5%, or optionally wherein the second peak absorption wavelength differs from the first peak absorption wavelength by less than 5 nm. Example 7. The LP-VTOD of Example 1 or 6, wherein the first electro-optic material comprises a first LC host and a first DC dye composition, the second electro-optic material comprises a second LC host and a second DC dye composition, and the second DC dye composition is substantially the same as the first DC dye composition. Example 8. The LP-VTOD of any one of Examples 1, 6, or 7, wherein the first electro-optic material comprises a first narrow-band guest-host liquid crystal mixture having a narrow or ultra-narrow band absorption, the second electro-optic material comprises a second narrow-band guest-host liquid crystal mixture having a narrow or ultra-narrow band absorption, and the second narrow-band guest-host liquid crystal mixture is substantially the same as the first narrow-band guest-host liquid crystal mixture. [0015] Example 9. The LP-VTOD of Example 8, wherein the first narrowband guest-host liquid crystal mixture and the second narrowband guest-host liquid crystal mixture have substantially the same optical properties selected from one of the following: peak absorption wavelength, full width half maximum absorption band, total absorptivity, or a combination thereof. [0016] Example 10. The LP-VTOD of any one of Examples 1 to 9, wherein the first peak absorption wavelength and the second peak absorption wavelength are independently selected from the following ranges: 100 to 380 nm, 380 to 780 nm, 780 to 1300 nm, 1300 to 3000 nm, or 3000 nm to 1 mm. [0017] Example 11. The LP-VTOD of any one of Examples 1 to 10, wherein the first peak absorption wavelength or the second peak absorption wavelength is in a range of 380 to 780 nm. Example 12. The LP-VTOD of any one of Examples 1-11, wherein the first peak absorption wavelength and the second peak absorption wavelength are both within a range of 380 to 780 nm, or optionally 400 to 700 nm. Example 13. The LP-VTOD of any one of Examples 1-12, wherein the clear state has a clear state transmittance %TC S-P of at least 20%, or optionally at least 40%, for at least one peak absorption wavelength. [0014] Example 14. The LP-VTOD of any one of Examples 1-13, wherein at each of the first peak absorption wavelength and the second peak absorption wavelength, the LP-VTOD is capable of switching from a clear state having a %T CS-P of at least 20%, or optionally at least 40%, to a darkened state having a %T DS-P of no more than 2.0%, or optionally no more than 1.0%. [0015] Example 15. The LP-VTOD of any one of Examples 1-14, wherein for at least one of the first peak absorption wavelength or the second peak absorption wavelength, switching between the clear state and the darkened state corresponds to an optical density change, ΔOD, of at least 1.0. [0014] Example 16. The LP-VTOD of Example 15, wherein ΔOD is at least 1.5, or optionally at least 2.0. [0015] Example 17. The LP-VTOD of any of Examples 1 to 16, wherein the clear state is characterized by a photopic transmittance PT CS of at least 40%, or optionally at least 60%, and the darkened state is characterized by a photopic transmittance PT DS of at least 10%, or optionally at least 20%. [0016] Example 18. The LP-VTOD of Example 17, wherein PT CS is greater than PT DS by more than 20 percentage points, or optionally more than 30 percentage points. [0015] Example 19. The LP-VTOD of Example 17 or 18, wherein a ratio of PT DS /PT CS is at least 0.25, or optionally at least 0.35, or optionally at least 0.5. [0016] Example 20. The LP-VTOD of any one of Examples 1 to 19, wherein the darkened state is characterized by an optical density of at least 2.0 measured at 532 nm, or optionally an optical density of at least 2.5 measured at 532 nm. [0017] Example 21. The LP-VTOD of any one of Examples 1 to 20, wherein at least one of the first FWHM and the second FWHM is 88 nm or less, or optionally 80 nm or less, or optionally 70 nm or less, or optionally 60 nm or less. [0014] Example 22. The LP-VTOD of any one of Examples 1 to 21, wherein the first cell comprises a first alignment layer, and the second cell comprises a second alignment layer, and wherein an orientation of the first alignment layer is rotated 70 to 110 degrees relative to an orientation of the second alignment layer. [0014] Example 23. The LP-VTOD of any one of Examples 1 to 22, wherein the first cell is configured to absorb a first polarization to a greater extent than a second polarization, and the second cell is configured to absorb the second polarization to a greater extent than the first polarization, wherein the second polarization is substantially orthogonal to the first polarization. [0015] Example 24. The LP-VTOD of any one of Examples 1 to 23, further comprising a third unit in optical communication with the first unit and the second unit, the third unit comprising a third electro-optical material provided between a third pair of substrates, wherein the third electro-optical material is capable of changing from a higher transmittance state to a lower transmittance state in a third wavelength region upon a change in a third electric field applied to the third electro-optical material. [0016] Example 25. The LP-VTOD of Example 24, wherein the third unit is characterized by having a narrowband absorption having a third peak absorption wavelength and a third FWHM of 175 nm or less. [0017] Example 26. The LP-VTOD of Example 25, wherein the third FWHM is 88 nm or less, or optionally 80 nm or less. Example 27. The LP-VTOD of Example 25 or 26, wherein the third peak absorption wavelength is in a range of 380 nm to 780 nm. Example 28. The LP-VTOD of Example 25 or 26, wherein the third peak absorption wavelength is in a range of 100 to 380 nm or 780 nm to 1 mm. Example 29. The LP-VTOD of Example 24, wherein the third unit is characterized by having a broadband absorption having a third FWHM greater than 175 nm. [0066] Example 30. The LP-VTOD of Example 29, wherein the lower transmittance state of the third cell has a photopic transmittance that is at least 20%, or optionally at least 40%, lower than a photopic transmittance of the higher transmittance state of the third cell. [0067] Example 31. The LP-VTOD of Example 29 or 30, wherein the lower transmittance state of the third cell is colorimetrically neutral. Example 32. The LP-VTOD of any one of Examples 24 to 31, further comprising a fourth unit in optical communication with the first unit, the second unit, and the third unit, the fourth unit comprising a fourth electro-optical material provided between a fourth pair of substrates, wherein the fourth electro-optical material is capable of changing from a higher transmittance state to a lower transmittance state in a fourth wavelength region upon a change in a fourth electric field applied to the fourth electro-optical material. Example 33. The LP-VTOD of Example 32, wherein the fourth unit is characterized by having a broadband absorption having a fourth FWHM greater than 175 nm. Example 34. The LP-VTOD of Example 32 or 33, wherein the third unit and the fourth unit operate cooperatively in their respective lower transmittance states to produce a combined photopic transmittance that is at least 20% lower, and optionally at least 40% lower, than a photopic transmittance produced when the third unit and the fourth unit are in their respective high transmittance states. Example 35. The LP-VTOD of Example 34, wherein the combined photopic transmittance is colorimetrically neutral. [0014] Example 36. An article comprising the LP-VTOD of any one of Examples 1 to 35, wherein the article comprises a camera filter, glasses, a sun visor, goggles, a mask, an AR/VR headset, a near-eye display, a window, a windshield, a sunroof, a head-up display, or an optical instrument. [0014] Example 37. A method of operating the LP-VTOD device of any one of Examples 1 to 29, the method comprising varying the first electric field to switch the first unit from a higher transmittance state to a lower transmittance state. [0015] Example 38. The method of Example 37, further comprising changing the second electric field to switch the second unit from a higher transmittance state to a lower transmittance state. [0016] Example 39. The method of Example 38, wherein the first electric field and the second electric field are independently controlled. [0017] Example 40. The method of Example 38, wherein the first electric field and the second electric field are jointly controlled. [0018] Example 41. The method of any one of Examples 37 to 40, further comprising detecting the presence of laser light incident on or near the LP-VTOD by a sensor, wherein the sensor is provided for wired or wireless communication with the LP-VTOD. [0066] Enumerated embodiment 42. The method of embodiment 41, wherein sensing triggers a change in one or both of the first electric field or the second electric field. [0067] Enumerated embodiment 43. The LP-VTOD of any one of embodiments 1 to 35, further comprising a polarization rotator disposed between the first unit and the second unit, wherein the polarization rotator comprises a half-wave plate or a quarter-wave plate.
可在不偏離本發明之實施例的精神及範疇的情況下以任何合適之方式組合特定實施例之特定細節。然而,本發明之其他實施例可針對與各個別態樣或此等個別態樣之特定組合相關的特定實施例。The specific details of a particular embodiment may be combined in any suitable manner without departing from the spirit and scope of the embodiments of the present invention. However, other embodiments of the present invention may be directed to specific embodiments related to each individual aspect or specific combinations of these individual aspects.
出於說明及描述之目的,已呈現本發明之實例實施例之以上描述。該描述並不意欲為窮盡性的或將本發明限制於所描述之精確形式,且鑒於以上教示,許多修改及變化為可能的。The above description of example embodiments of the present invention has been presented for purposes of illustration and description. It is not intended to be exhaustive or to limit the invention to the precise form described, and many modifications and variations are possible in light of the above teaching.
在先前描述中,出於解釋之目的,已闡述多個細節以便提供對本發明技術之各種實施例之理解。然而,熟習此項技術者應清楚,某些實施例可在無此等細節中之一些的情況下或在其他另外的細節下實踐。In the foregoing description, for the purpose of explanation, numerous details have been set forth in order to provide an understanding of various embodiments of the present invention. However, one skilled in the art will appreciate that certain embodiments may be practiced without some of these details or with other additional details.
在描述若干實施例之後,熟習此項技術者應認識到,在不背離本發明之精神情況下,可使用各種修改、替代構造及等效物。 另外,為避免不必要地混淆本發明,尚未描述多個熟知製程及元件。另外,任何特定實施例之細節可能不會一直存在於該實施例之變體中或可添加至其他實施例中。After describing several embodiments, those skilled in the art will recognize that various modifications, alternative constructions, and equivalents may be used without departing from the spirit of the present invention. Furthermore, many well-known processes and components have not been described to avoid unnecessarily obscuring the present invention. Furthermore, details of any particular embodiment may not always be present in variations of that embodiment or may be added to other embodiments.
在提供值之範圍下,應理解,除非上下文另外明確規定,否則亦特別揭示在該範圍上限與下限之間的各居間值(intervening value),精確至下限單位之十分位。涵蓋在所陳述範圍內任何所陳述值或居間值之間的各更較小範圍及所陳述範圍內之任何其他所陳述或居間值。此等較小範圍之上限及下限可獨立地包括或排除在該範圍內,且任一界限、無界限或兩個界限包括於較小範圍中之各範圍亦涵蓋於本發明內,經受所陳述範圍中任何特別排除之界限。在所陳述範圍包括界限中之一者或兩者之情況下,亦包括排除彼等所包括界限中之任一者或兩者的範圍。Where a range of values is provided, it is understood that each intervening value between the upper and lower limits of that range is also specifically disclosed, to the tenth of the unit of the lower limit, unless the context clearly dictates otherwise. Each smaller range between any stated or intervening value in the stated range, as well as any other stated or intervening value in the stated range, is encompassed. The upper and lower limits of such smaller ranges may independently be included or excluded in the range, and ranges where either, no, or both limits are included in the smaller range are also encompassed within the invention, subject to any specifically excluded limits in the stated range. Where the stated range includes one or both of the limits, ranges excluding either or both of those included limits are also included.
除非上下文另外明確指示,否則如在本文及所附申請專利範圍中所使用,單數形式「一(a)」、「一(an)」及「該」包括複數個指示物。因此,舉例而言,對「一方法」之提及包括複數個此等方法,且對「層」之提及包括對一個或多個層及熟習此項技術者已知之其等效物的提及,等等。現已出於清楚及理解之目的詳細地描述本發明。然而,應瞭解,某些變化及修改可在隨附申請專利範圍之範疇內實踐。As used herein and in the appended claims, the singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise. Thus, for example, reference to "a method" includes a plurality of such methods, and reference to "a layer" includes reference to one or more layers and equivalents thereof known to those skilled in the art, and so forth. The present invention has been described in detail for purposes of clarity and understanding. However, it should be understood that certain variations and modifications may be practiced within the scope of the appended claims.
本文所引用之所有出版物、專利及專利申請均出於所有目的以全文引用之方式併入本文中。不承認任一者為先前技術。All publications, patents, and patent applications cited herein are incorporated by reference in their entirety for all purposes. No admission is made that any of them is prior art.
10,310,410,410c:LP-VTOD 11,311,411:第一單元 12a,12b,32a,32b:基板 13,33:密封材料 14a,14b,34a,34b:透明導電層 16a,16b,36a,36b:鈍化層 18a,18b,38a,38b:配向層 18a-BL,38a-BL:對準刷線 20:第一單元間隙 25:第一電光材料 26,326,426,426c,426d:入射光 26':較低強度分量 26'':較高強度窄帶輻射分量 27,327a,327b,327c,327d,427a,427b,427c,427d:透射光 27':所透射之較低強度分量 27'':所透射之窄帶輻射分量 28,48:開關 31,331,431:第二單元 40:第二單元間隙 45:第二電光材料 50:將第一單元與第二單元分隔之層 55,355,455:控制器 322,422:第一LC主體 324,424:第一染料組成物 326',426',426c',426d':寬帶光 326-1'':第一窄帶輻射 326-2'':第二窄帶輻射 327a',327b',327c',327d',427a',427b',427c',427d':所透射之寬帶光 327-1a'',327-1b'',327-1c'',327-1d'':所透射之第一窄帶輻射 327-2a'',327-2b'',327-2c'',327-2d'':所透射之第二窄帶輻射 342,442:第二LC主體 344,444:第二染料組成物 426'',426d'':窄帶輻射 427a'',427b'',427d'':所透射之窄帶輻射 451:第三單元 462:第三LC主體 464:第三染料組成物 561,563,565,567:透射光譜 600:色度圖 602:中性區域 10, 310, 410, 410c: LP-VTOD 11, 311, 411: First cell 12a, 12b, 32a, 32b: Substrate 13, 33: Sealing material 14a, 14b, 34a, 34b: Transparent conductive layer 16a, 16b, 36a, 36b: Passivation layer 18a, 18b, 38a, 38b: Alignment layer 18a-BL, 38a-BL: Alignment brush lines 20: First cell gap 25: First electro-optical material 26, 326, 426, 426c, 426d: Incident light 26': Lower intensity component 26'': Higher intensity narrowband radiation component 27,327a,327b,327c,327d,427a,427b,427c,427d: Transmitted light 27': Transmitted lower-intensity component 27'': Transmitted narrowband radiation component 28,48: Switch 31,331,431: Second cell 40: Second cell gap 45: Second electro-optical material 50: Layer separating the first and second cells 55,355,455: Controller 322,422: First LC host 324,424: First dye composition 326',426',426c',426d': Broadband light 326-1'': First narrowband radiation 326-2'': Second narrowband radiation 327a', 327b', 327c', 327d', 427a', 427b', 427c', 427d': Transmitted broadband light 327-1a'', 327-1b'', 327-1c'', 327-1d'': Transmitted first narrowband radiation 327-2a'', 327-2b'', 327-2c'', 327-2d'': Transmitted second narrowband radiation 342, 442: Second LC host 344, 444: Second dye composition 426'', 426d'': Narrowband radiation 427a'', 427b'', 427d'': Transmitted narrowband radiation 451: Third unit 462: Third LC host 464: Third dye composition 561, 563, 565, 567: Transmitted spectrum 600: Chromaticity diagram 602: Neutral region
[圖1]為根據一些實施例之雷射保護可變透射光學裝置(「LP-VTOD」)之非限制性實例的橫截面圖。[ FIG. 1 ] is a cross-sectional view of a non-limiting example of a laser protected variable transmission optical device (“LP-VTOD”) according to some embodiments.
[圖2A及圖2B]為說明根據一些實施例之不同單元之間的配向層之相對定向的示意性平面圖。2A and 2B are schematic plan views illustrating the relative orientation of alignment layers between different cells according to some embodiments.
[圖3A至圖3D]為根據一些實施例之LP-VTOD之非限制性實例的一系列橫截面示意圖。3A-3D are a series of cross-sectional schematic diagrams of non-limiting examples of LP-VTOD according to some embodiments.
[圖4A至圖4B]為根據一些實施例之另一LP-VTOD之非限制性實例的橫截面示意圖。4A-4B are cross-sectional schematic diagrams of a non-limiting example of another LP-VTOD according to some embodiments.
[圖4C至圖4D]為根據一些實施例之另一LP-VTOD之非限制性實例的橫截面示意圖。4C-4D are cross-sectional schematic diagrams of non-limiting examples of another LP-VTOD according to some embodiments.
[圖5]為說明根據一些實施例之將寬帶單元添加至LP-VTOD之效應的各種光透射光譜之曲線圖。FIG5 is a graph of various light transmission spectra illustrating the effect of adding a wideband unit to an LP-VTOD according to some embodiments.
[圖6]說明根據一些實施例之CIE 1931 x-y色彩空間色度圖之一部分。[Figure 6] illustrates a portion of the CIE 1931 x-y color space chromaticity diagram according to some embodiments.
[圖7]說明LP-VTOD之非限制性實例之清透及暗化狀態的光密度光譜。[Figure 7] Optical density spectra illustrating clear and dark states of a non-limiting example of LP-VTOD.
10:LP-VTOD 10: LP-VTOD
11:第一單元 11: Unit 1
12a,12b,32a,32b:基板 12a,12b,32a,32b:Substrate
13,33:密封材料 13,33: Sealing materials
14a,14b,34a,34b:透明導電層 14a, 14b, 34a, 34b: Transparent conductive layer
16a,16b,36a,36b:鈍化層 16a, 16b, 36a, 36b: Passivation layer
18a,18b,38a,38b:配向層 18a,18b,38a,38b: Alignment layer
20:第一單元間隙 20: First unit gap
25:第一電光材料 25: First electro-optical material
26:入射光 26: Incident Light
26':較低強度分量 26': Lower strength
26":較高強度窄帶輻射分量 26": High-intensity narrowband radiation component
27:透射光 27: Transmitted Light
27':所透射之較低強度分量 27': Transmitted lower intensity component
27":所透射之窄帶輻射分量 27": Transmitted narrowband radiation component
28,48:開關 28,48: Switch
31:第二單元 31: Unit 2
40:第二單元間隙 40: Second unit gap
45:第二電光材料 45: Second electro-optical material
50:將第一單元與第二單元分隔之層 50: Layer separating the first unit from the second unit
55:控制器 55: Controller
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| US18/505,144 US12222623B2 (en) | 2021-09-22 | 2023-11-09 | Laser-protection variable transmission optical device |
| US18/505,144 | 2023-11-09 |
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| TW202534409A true TW202534409A (en) | 2025-09-01 |
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| US11500255B2 (en) * | 2018-11-07 | 2022-11-15 | Alphamicron Incorporated | Variable transmission optical assembly having a pixelated switchable birefringent layer |
| WO2023049224A1 (en) * | 2021-09-22 | 2023-03-30 | Alphamicron Incorporated | Multi-color variable transmission optical device |
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