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TW202521346A - Conductive film and manufacturing method thereof - Google Patents

Conductive film and manufacturing method thereof Download PDF

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Publication number
TW202521346A
TW202521346A TW113135808A TW113135808A TW202521346A TW 202521346 A TW202521346 A TW 202521346A TW 113135808 A TW113135808 A TW 113135808A TW 113135808 A TW113135808 A TW 113135808A TW 202521346 A TW202521346 A TW 202521346A
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film
aforementioned
conductive film
conductive
fluororesin
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TW113135808A
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Chinese (zh)
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溝口昌範
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日商旭電化研究所股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • B32B15/082Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin comprising vinyl resins; comprising acrylic resins
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/30Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18Pretreatment of the material to be coated
    • C23C18/20Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18Pretreatment of the material to be coated
    • C23C18/20Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/28Sensitising or activating
    • C23C18/30Activating or accelerating or sensitising with palladium or other noble metal
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/02Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/54Electroplating of non-metallic surfaces
    • C25D5/56Electroplating of non-metallic surfaces of plastics
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/36Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Insulated Conductors (AREA)
  • Laminated Bodies (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

Provided is a conductive film that has a fluororesin film as a base material and a conductive coating applied thereon by plating. The conductive coating formed by plating on the fluororesin film has a peel strength of 5 to 15 N/cm. Therefore, it is possible to prevent the conductive coating from peeling off from the fluororesin film due to heat in usage environment, so that it can be used as a variety of substrate materials, such as layer components for build-up substrates. In addition, since the conductive coating is plated directly onto the fluororesin film, it is possible to take advantage of a low dielectric tangent of less than 0.001, a characteristic possessed by the fluororesin film, whereby the conductive film is a useful material for next-generation mobile communication systems represented by 5G/6G.

Description

導電性膜及其製造方法 Conductive film and method for manufacturing the same

本發明係關於在氟樹脂膜上以鍍覆形成導電被膜而成的導電性膜及其製造方法。 The present invention relates to a conductive film formed by coating a conductive coating on a fluororesin film and a method for manufacturing the same.

本案申請人已提出專利文獻1,其係以功能性樹脂膜作為基材並以鍍覆形成導電被膜而成的可撓性電路膜的相關技術。專利文獻1中亦提出了將以氟樹脂膜作為基材的可撓性電路膜用作為高速傳輸用可撓性電路基板、天線纜線用可撓性電路基板、半導體用可撓性電路基板、致動器。 The applicant of this case has proposed patent document 1, which is a technology related to a flexible circuit film formed by coating a functional resin film as a substrate and forming a conductive film. Patent document 1 also proposes using a flexible circuit film with a fluororesin film as a substrate as a flexible circuit substrate for high-speed transmission, a flexible circuit substrate for antenna cables, a flexible circuit substrate for semiconductors, and an actuator.

此外,氟樹脂膜與其他材料的接合性極低。因此,使用氟樹脂膜作為基材的情況中,難以藉由鍍覆高強度地接合導電被膜,從實用性的觀點來看,仍有改良的空間。除了鍍覆以外,亦已知藉由使玻璃布、聚醯亞胺清漆、環氧樹脂等含浸於氟樹脂膜而抑制熱膨脹或是提升與其他物質的接著性,再藉由熱壓接疊層銅箔而成的導電膜。然而,若混入玻璃布或聚醯亞胺清漆等雜質,則會將氟樹脂膜本身具有的介電損耗正切極低這樣的特徵抵消。又,進行熱壓接疊層的銅箔之背面原本就經過粗化處理, 由於表皮效果,其凹凸會在傳輸特性中產生損耗。再者,熱壓接時對於基材施加的熱應力大。 In addition, the bonding property of fluororesin film to other materials is extremely low. Therefore, when using fluororesin film as a substrate, it is difficult to bond the conductive film with high strength by plating, and from the perspective of practicality, there is still room for improvement. In addition to plating, it is also known that a conductive film is formed by impregnating glass cloth, polyimide varnish, epoxy resin, etc. into a fluororesin film to suppress thermal expansion or improve the bonding property with other substances, and then laminating copper foil by heat pressing. However, if impurities such as glass cloth or polyimide varnish are mixed in, the extremely low dielectric loss tangent characteristic of the fluororesin film itself will be offset. In addition, the back of the copper foil that is laminated by heat pressing has been roughened. Due to the skin effect, the unevenness will cause loss in transmission characteristics. Furthermore, the thermal stress applied to the substrate during heat pressing is large.

又,半導體封裝等之中,近年來由於高功能化及小型化而採用半加成工法(Semi-additive Process),其係以增層方式積層絕緣層並僅在需要的部分藉由電鍍銅來堆積電路。這樣的絕緣層例如非專利文獻1所示,係使用以環氧樹脂等熱硬化性樹脂作為主成分的絕緣樹脂膜。此絕緣樹脂膜係以形成於PET膜上並連同保護膜成為三層結構的方式提供,在將保護膜、PET膜剝離並使其熱硬化之後,進行通孔的形成等,然後實施鍍覆處理,而形成既定的導電被膜。 In addition, in recent years, semiconductor packaging and the like have adopted a semi-additive process due to high functionality and miniaturization. The semi-additive process is to stack insulating layers in an incremental manner and to stack circuits only in the required parts by electroplating copper. Such an insulating layer, as shown in non-patent document 1, uses an insulating resin film with a thermosetting resin such as epoxy resin as the main component. This insulating resin film is formed on a PET film and provided in a three-layer structure together with a protective film. After the protective film and the PET film are peeled off and thermally cured, through holes are formed, and then a coating process is performed to form a predetermined conductive film.

[先前技術文獻] [Prior Art Literature]

[專利文獻] [Patent Literature]

[專利文獻1]WO2018/225760號公報 [Patent document 1] WO2018/225760

[非專利文獻] [Non-patent literature]

[非專利文獻1]「半導體封裝基板用層間絕緣材料的現狀與動向」,奈良橋弘久,中村茂雄,電子學實裝學會誌Voi.14 No.5(2011) [Non-patent document 1] "Current status and trends of interlayer insulation materials for semiconductor package substrates", Hirohisa Narahashi, Shigeo Nakamura, Journal of the Society of Electronics Implementation Voi.14 No.5 (2011)

此外,對於以5G/6G為代表的次世代移動通訊系統用的材料而言,在毫米波段(28GHz以上)這樣的高頻段之中需要優良的介電特性, 尤其低介電損耗正切的基板材料受到重視。非專利文獻1中顯示的以環氧樹脂等熱硬化性樹脂作為主成分的絕緣樹脂膜,例如市售的「Ajinomoto Build-up Film(註冊商標)」(Ajinomoto Fine-Techno股份有限公司)的情況中,介電損耗正切最低者為0.005左右。另一方面,就氟樹脂膜的介電損耗正切而言,若為高純度則會未達0.001,因而有利。然而,氟樹脂膜如上所述,其接著性並不佳,因此為了實用化而必須混合雜質,目前已實用化的增層基板中所使用者,在疊層有上述銅箔的情況中,介電損耗正切超過0.001。 In addition, materials used in next-generation mobile communication systems represented by 5G/6G require excellent dielectric properties in high frequency bands such as millimeter wave bands (above 28GHz), and substrate materials with low dielectric loss tangent are particularly valued. In the case of insulating resin films with thermosetting resins such as epoxy resins as the main component shown in non-patent document 1, for example, the commercially available "Ajinomoto Build-up Film (registered trademark)" (Ajinomoto Fine-Techno Co., Ltd.), the lowest dielectric loss tangent is about 0.005. On the other hand, the dielectric loss tangent of fluororesin films is less than 0.001 if the purity is high, which is advantageous. However, as mentioned above, the adhesion of the fluororesin film is not good, so it must be mixed with impurities for practical use. The dielectric loss tangent of the fluororesin film used in the currently practical build-up substrate exceeds 0.001 when the copper foil is stacked.

本發明係鑒於上述情事而成者,其課題在於提供一種導電性膜及其製造方法,該導電性膜係以氟樹脂膜作為基材,並且鍍覆層牢固地附著,具有優良的介電特性,而適合用作為以導電被膜作為導電層的增層基板之層構成材。 The present invention is made in view of the above situation, and its subject is to provide a conductive film and a manufacturing method thereof, wherein the conductive film has a fluororesin film as a base material, and the coating layer is firmly attached, has excellent dielectric properties, and is suitable for use as a layer constituent material of a build-up substrate with a conductive film as a conductive layer.

為了解決上述課題,本發明提供一種導電性膜,係藉由鍍覆處理在氟樹脂膜的至少一面上形成有導電被膜, In order to solve the above-mentioned problem, the present invention provides a conductive film, which is formed with a conductive coating on at least one side of a fluororesin film by plating treatment.

前述導電被膜相對於前述氟樹脂膜的剝離強度為5至15N/cm的範圍。 The peeling strength of the conductive film relative to the fluororesin film is in the range of 5 to 15 N/cm.

較佳係用作為以前述氟樹脂膜作為絕緣層並以前述導電被膜作為導電層的增層基板之層構成材。 It is preferably used as a layer constituent material of a build-up substrate using the aforementioned fluororesin film as an insulating layer and the aforementioned conductive film as a conductive layer.

能夠以前述氟樹脂膜的一面上形成有前述導電被膜、另一面為經過表面改質處理之面的型態提供作為前述層構成材。 The aforementioned conductive film can be formed on one side of the aforementioned fluororesin film, and the other side is a surface that has undergone surface modification treatment to provide the aforementioned layer constituent material.

能夠以在前述氟樹脂膜的雙面上形成有前述導電被膜的型態提供作為前述層構成材。 The conductive film can be provided as the layer constituent material in a form in which the conductive film is formed on both sides of the fluororesin film.

能夠以在前述氟樹脂膜的一面上形成有前述導電被膜、在另一面上依序積層有接合片及保護膜的型態提供作為前述層構成材。 The aforementioned layer constituent material can be provided in a form in which the aforementioned conductive film is formed on one surface of the aforementioned fluororesin film, and a bonding sheet and a protective film are sequentially laminated on the other surface.

形成前述氟樹脂膜的氟樹脂較佳係選自聚四氟乙烯(4氟化)(PTFE)、四氟乙烯-全氟烷基乙烯醚共聚物(PFA)、四氟乙烯-六氟丙烯共聚物(4.6氟化)(FEP)、四氟乙烯-乙烯共聚物(ETFE)、聚偏二氟乙烯(2氟化)(PVDF)、聚氯三氟乙烯(3氟化)(PCTFE)或三氟氯乙烯-乙烯共聚物(ECTFE)。 The fluororesin forming the aforementioned fluororesin film is preferably selected from polytetrafluoroethylene (4-fluorinated) (PTFE), tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer (PFA), tetrafluoroethylene-hexafluoropropylene copolymer (4.6-fluorinated) (FEP), tetrafluoroethylene-ethylene copolymer (ETFE), polyvinylidene fluoride (2-fluorinated) (PVDF), polychlorotrifluoroethylene (3-fluorinated) (PCTFE) or chlorotrifluoroethylene-ethylene copolymer (ECTFE).

此情況中,介電損耗正切更佳係未達0.001。 In this case, the dielectric loss tangent is preferably less than 0.001.

前述氟樹脂膜較佳係不含有用以提升接著性的雜質。 The aforementioned fluororesin film preferably does not contain impurities useful for improving adhesion.

本發明的導電性膜可適用於高頻天線模組用可撓性電路基板、高速傳輸用可撓性纜線、半導體封裝用基板、多層基板、類基板印刷電路板(下文亦簡稱SLP(Substrate-Like PCB))、致動器。 The conductive film of the present invention can be applied to flexible circuit substrates for high-frequency antenna modules, flexible cables for high-speed transmission, substrates for semiconductor packaging, multi-layer substrates, substrate-like printed circuit boards (hereinafter referred to as SLP (Substrate-Like PCB)), and actuators.

又,本發明中,提供一種導電性膜之製造方法,其係藉由鍍覆處理在氟樹脂膜的至少一面上形成導電被膜以製造導電性膜的方法,其中,前述鍍覆處理係以前述氟樹脂膜的表面改質處理、觸媒賦予處理、加速處理、無電鍍銅或無電鍍鎳以及電鍍銅或電鍍鎳的順序進行。 In addition, the present invention provides a method for manufacturing a conductive film, which is a method for manufacturing a conductive film by forming a conductive coating on at least one side of a fluororesin film by plating treatment, wherein the plating treatment is performed in the order of surface modification treatment of the fluororesin film, catalyst application treatment, acceleration treatment, electroless copper plating or electroless nickel plating, and electrolytic copper plating or electrolytic nickel plating.

前述加速處理中所使用的加速劑較佳為熱硫酸的溶液。 The accelerator used in the aforementioned accelerated treatment is preferably a hot sulfuric acid solution.

前述熱硫酸的溶液較佳為溫度加熱至40至80℃的濃度10至30容量%之硫酸溶液。 The aforementioned hot sulfuric acid solution is preferably a sulfuric acid solution with a concentration of 10 to 30% by volume heated to 40 to 80°C.

浸漬於前述硫酸溶液的時間較佳為1至5分鐘。 The immersion time in the aforementioned sulfuric acid solution is preferably 1 to 5 minutes.

前述製造方法中,形成前述氟樹脂膜的氟樹脂較佳係選自聚四氟乙烯(4氟化)(PTFE)、四氟乙烯-全氟烷基乙烯醚共聚物(PFA)、四氟乙烯-六氟 丙烯共聚物(4.6氟化)(FEP)、四氟乙烯-乙烯共聚物(ETFE)、聚偏二氟乙烯(2氟化)(PVDF)、聚氯三氟乙烯(3氟化)(PCTFE)或三氟氯乙烯-乙烯共聚物(ECTFE)。 In the aforementioned manufacturing method, the fluororesin forming the aforementioned fluororesin film is preferably selected from polytetrafluoroethylene (4 fluorinated) (PTFE), tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer (PFA), tetrafluoroethylene-hexafluoropropylene copolymer (4.6 fluorinated) (FEP), tetrafluoroethylene-ethylene copolymer (ETFE), polyvinylidene fluoride (2 fluorinated) (PVDF), polychlorotrifluoroethylene (3 fluorinated) (PCTFE) or chlorotrifluoroethylene-ethylene copolymer (ECTFE).

根據本發明,藉由鍍覆而形成於氟樹脂膜上的導電被膜之剝離強度為5至15N/cm。結果可抑制因為使用環境中的熱造成導電被膜從氟樹脂膜剝離,而可使用於增層基板的層構成材等各種基板材料。又,因為導電被膜係直接鍍覆於氟樹脂膜,故可產生氟樹脂膜所具有之低介電損耗正切未達0.001這樣的特性,而可用作為以5G/6G為代表的次世代移動通信系統用的材料。又,因為係藉由鍍覆形成導電被膜,故被鍍覆面與鍍覆面皆為平滑,不會像將銅箔熱壓接的以往方法中,因為銅箔背面的凹凸導致傳輸損耗變大。又,鍍覆步驟中,較佳係以熱硫酸進行加速處理,藉此有助於抑制導電性膜的熱應力。 According to the present invention, the peeling strength of the conductive film formed on the fluororesin film by plating is 5 to 15 N/cm. As a result, the peeling of the conductive film from the fluororesin film due to heat in the use environment can be suppressed, and various substrate materials such as layer components of build-up substrates can be used. In addition, because the conductive film is directly plated on the fluororesin film, the low dielectric loss tangent of less than 0.001 that the fluororesin film has can be produced, and it can be used as a material for next-generation mobile communication systems represented by 5G/6G. In addition, because the conductive film is formed by plating, both the plated surface and the plated surface are smooth, unlike the previous method of hot pressing the copper foil, which will not cause the transmission loss to increase due to the unevenness of the back of the copper foil. In addition, in the plating step, it is better to use hot sulfuric acid to accelerate the treatment, which helps to suppress the thermal stress of the conductive film.

圖1(a)至(c)係示意顯示本發明之導電性膜的用途與其構成之例子的圖。 Figures 1(a) to (c) are diagrams schematically showing examples of the uses and structures of the conductive film of the present invention.

圖2(a)至(c)係示意顯示本發明之導電性膜的構成之另一例的圖。 Figures 2(a) to (c) are diagrams schematically showing another example of the structure of the conductive film of the present invention.

圖3(a)至(d)係用以說明單面為實施了表面接著處理之面的層構成材之製造步驟之一例的圖。 Figures 3(a) to (d) are diagrams used to illustrate an example of the manufacturing steps of a layered structural material having a single surface subjected to surface bonding treatment.

圖4(a)至(e)係用以說明單面為實施了表面接著處理之面的層構成材之製造步驟之另一例的圖。 Figures 4(a) to (e) are diagrams for explaining another example of the manufacturing steps of a layered structural material having a single surface subjected to surface bonding treatment.

圖5(a)至(c)係顯示雙面上形成有銅鍍覆層的層構成材之製造步驟之一例的圖。 Figures 5(a) to (c) are diagrams showing an example of the manufacturing steps of a layered material having a copper-plated coating formed on both sides.

圖6(a)至(c)係顯示應用於高頻傳輸纜線可撓性電路基板之事例的圖。 Figures 6(a) to (c) show examples of flexible circuit substrates used in high-frequency transmission cables.

圖7(a)至(c)係用以說明增層基板之製作步驟的圖。 Figures 7(a) to (c) are used to illustrate the manufacturing steps of the build-up substrate.

圖8係顯示半導體封裝之圖像的圖。 FIG8 is a diagram showing an image of a semiconductor package.

以下根據圖式所示之實施型態更詳細說明本發明。 The present invention is described in more detail below based on the implementation shown in the drawings.

圖1(a)至(c)係示意顯示本發明之導電性膜的構成之用途與其構成例的圖,作為一例,係以聚四氟乙烯(PTFE)作為基材。其中,圖1(a)、(b)顯示高頻(RF)模組用可撓性印刷配線板(FPC(Flexible printed circuits))之材料的構成例,圖1(a)係顯示對於PTFE的單面實施鍍銅而成者,圖1(b)係顯示對於PTFE的雙面實施鍍銅而成者。圖1(c)係顯示適用於增層基板用的附金屬之接合膜、可撓性扁平纜線(FFC)用的阻抗整合用屏蔽膜的構成例。圖1(c)中,對於一面實施銅鍍覆,而在另一面上依序積層接合片及保護膜。 Figures 1(a) to (c) are diagrams schematically showing the use and configuration examples of the conductive film of the present invention. As an example, polytetrafluoroethylene (PTFE) is used as the substrate. Among them, Figures 1(a) and (b) show configuration examples of materials for flexible printed wiring boards (FPCs (Flexible printed circuits)) for high-frequency (RF) modules. Figure 1(a) shows copper plating on one side of PTFE, and Figure 1(b) shows copper plating on both sides of PTFE. Figure 1(c) shows a configuration example of a metal-attached bonding film suitable for build-up substrates and an impedance-integrated shielding film for flexible flat cables (FFCs). In Figure 1(c), copper plating is applied to one side, and a bonding sheet and a protective film are sequentially laminated on the other side.

圖2(a)至(c)係示意顯示本發明之導電性膜的構成之另一例的圖。其中顯示了適合作為增層基板之層構成材(型態A至C)之構成的例子。增層基板例如用作為圖8所示的半導體封裝用基板(Substrate)。這樣的增層基板於後段中詳細敘述,但如圖7(a)至(c)所示,其係藉由下述方法製造: 將由接合片、氟樹脂膜(例如PTFE)及鍍銅之積層結構所構成之層構成材包夾芯板(core substrate)以進行積層,並形成通孔,再藉由蝕刻形成導體電路。又,圖8中顯示了搭載有半導體封裝的PCB,但近年來係使用具備細微導體電路的SLP(Substrate-Like PCB)作為該PCB,而可藉由鍍覆形成細微電路的本實施型態之導電性膜亦適合作為用以形成該SLP的材料使用。 Figures 2(a) to (c) are diagrams schematically showing another example of the structure of the conductive film of the present invention. Therein is shown an example of the structure of a layered component (type A to C) suitable for use as a build-up substrate. The build-up substrate is used, for example, as a semiconductor package substrate (Substrate) as shown in Figure 8. Such a build-up substrate is described in detail in the following section, but as shown in Figures 7(a) to (c), it is manufactured by the following method: The layered component composed of a laminated structure of a bonding sheet, a fluororesin film (such as PTFE) and copper plating is sandwiched with a core substrate for lamination, and through holes are formed, and then a conductive circuit is formed by etching. In addition, FIG. 8 shows a PCB equipped with a semiconductor package, but in recent years, an SLP (Substrate-Like PCB) having a fine conductor circuit is used as the PCB, and the conductive film of this embodiment that can form a fine circuit by plating is also suitable for use as a material for forming the SLP.

圖2(a)所示的型態A之層構成材係以氟樹脂膜(例如PTFE或四氟乙烯-全氟烷基乙烯醚共聚物(PFA))作為基材,並在其一面上形成銅鍍覆層而成者。另一面係在在使用接合性極差的氟樹脂膜製作增層基板時成為實施了可積層接合片等接著層之處理(本說明書中稱為「表面接著處理」)的面。 The layered material of type A shown in FIG2(a) is a fluororesin film (such as PTFE or tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer (PFA)) as a base material, and a copper-plated coating is formed on one side thereof. The other side is a surface that has been treated with a bonding layer such as a laminated bonding sheet (referred to as "surface bonding treatment" in this manual) when a build-up substrate is made using a fluororesin film with extremely poor bonding properties.

圖3(a)至(d)係單面為實施了表面接著處理之面的層構成材之製造步驟的一例。首先,以後述電漿處理及鈉處理等對於基材(例如PTFE)的雙面進行表面改質處理(圖3(a))。然後對於雙面實施無電鍍銅(圖3(b))、將一面的無電鍍銅遮蔽,對於另一面進行蝕刻(圖3(c))。然後將遮罩剝離,對於單面實施電鍍銅(圖3(d))。藉此,在另一面中,無電鍍銅的層被蝕刻,使得經由電漿處理及鈉處理等進行表面改質的面露出。該露出的經過表面改質之面成為實施了表面接著處理的面,而可進行接著層的積層。 Figures 3(a) to (d) are an example of the manufacturing steps of a layered material in which a single side is subjected to a surface bonding treatment. First, the surface of both sides of a substrate (e.g., PTFE) is modified by plasma treatment and sodium treatment described later (Figure 3(a)). Then, electroless copper plating is performed on both sides (Figure 3(b)), the electroless copper plating on one side is masked, and the other side is etched (Figure 3(c)). Then, the mask is peeled off, and electrolytic copper plating is performed on a single side (Figure 3(d)). Thereby, on the other side, the electroless copper plating layer is etched, so that the surface modified by plasma treatment and sodium treatment is exposed. The exposed surface that has undergone surface modification becomes a surface that has undergone surface bonding treatment, and the bonding layer can be deposited.

圖4(a)至(e)係單面為實施了表面接著處理之面的層構成材之製造步驟的另一例。對於基材的雙面進行表面改質處理、對於雙面進行無電鍍銅的各步驟(圖4(a)、(b))與圖3(a)至(b)的步驟相同。如圖4(c)所示,將一面的無電鍍銅遮蔽並對另一面的無電鍍銅進行蝕刻的步驟基本上亦與 圖3(c)相同。然而,圖4(c)係假設蝕刻結果為並未殘留在(a)的步驟中進行了表面改質處理之面的情況,此情況中,係對於單面實施電鍍銅後(圖4(d)),再次對於另一面進行表面改質處理(圖4(e))。藉此,可將接著層積層於另一面。 Figures 4(a) to (e) are another example of the manufacturing steps of a layered material with one side subjected to surface bonding treatment. The steps of surface modification treatment on both sides of the substrate and electroless copper plating on both sides (Figures 4(a) and (b)) are the same as the steps of Figures 3(a) to (b). As shown in Figure 4(c), the steps of masking the electroless copper plating on one side and etching the electroless copper plating on the other side are basically the same as Figure 3(c). However, Figure 4(c) assumes that the etching result does not remain on the surface that has been subjected to surface modification treatment in step (a). In this case, after electroplating copper on one side (Figure 4(d)), the other side is subjected to surface modification treatment again (Figure 4(e)). In this way, the next layer can be deposited on the other side.

圖2(b)所示之型態B的層構成材,係以氟樹脂膜(例如PTFE或PFA)作為基材並在其雙面上形成銅鍍覆層而成者。圖5(a)至(c)係顯示其製造步驟,其係對於基材的雙面進行表面改質處理(圖5(a)),然後對於雙面實施無電鍍銅(圖5(b)),再對於雙面實施電鍍銅而成者(圖5(c))。 The layered material of type B shown in FIG2(b) is formed by using a fluororesin film (such as PTFE or PFA) as a substrate and forming a copper-plated coating on both sides thereof. FIG5(a) to (c) show the manufacturing steps, which are to perform surface modification treatment on both sides of the substrate (FIG5(a)), then perform electroless copper plating on both sides (FIG5(b)), and then perform electrolytic copper plating on both sides (FIG5(c)).

圖2(c)所示的型態C,係在以氟樹脂膜(例如PTFE或PFA)作為基材並在一面上形成有銅鍍覆層之相當於圖2(a)之型態A者的另一面上積層接合片,再於其表面上積層保護膜而成的結構。圖2(a)的型態A,如圖3及圖4所示,銅鍍覆層的相反面成為實施了可接著接合片之表面接著處理的面。因此,若以在實施了表面接著處理的面上預先積層接合片及保護膜的型態提供,則容易用於增層基板。氟樹脂膜的線膨脹係數雖高,但在積層有接合片的型態亦具有可抑制氟樹脂膜之熱膨脹這樣的優點。 Type C shown in FIG2(c) is a structure in which a bonding sheet is laminated on the other side of a fluororesin film (such as PTFE or PFA) with a copper-plated coating formed on one side, which is equivalent to Type A in FIG2(a), and a protective film is laminated on the surface. As shown in FIG3 and FIG4, the opposite side of the copper-plated coating of Type A in FIG2(a) is a surface that has been subjected to surface bonding treatment to which the bonding sheet can be bonded. Therefore, if a bonding sheet and a protective film are pre-laminated on a surface subjected to surface bonding treatment, it can be easily used for a build-up substrate. Although the linear expansion coefficient of the fluororesin film is high, the type in which the bonding sheet is laminated also has the advantage of suppressing the thermal expansion of the fluororesin film.

圖6(a)至(c)顯示作為高頻傳輸纜線用可撓性電路基板、高頻天線模組用可撓性電路基板使用的構成例。圖6(a)係使用圖2(a)之型態A的例子,圖6(b)係使用圖2(b)之型態B的構成例,圖6(c)係在圖2(b)的型態B上積層圖2(c)之型態C的構成例。 Figures 6(a) to (c) show examples of configurations used as flexible circuit substrates for high-frequency transmission cables and flexible circuit substrates for high-frequency antenna modules. Figure 6(a) is an example of using type A in Figure 2(a), Figure 6(b) is an example of using type B in Figure 2(b), and Figure 6(c) is an example of layering type C in Figure 2(c) on type B in Figure 2(b).

圖7(a)至(c)所示之增層基板的情況,例如,係將於PTFE實施單面鍍銅而成的型態A(參照圖2(a))或型態C(參照圖2(c))的層構成材 貼合於芯板(圖7(a))。然後以雷射加工形成通孔,對於通孔實施無電鍍銅,使芯板與PTFE之單面銅鍍覆導通(圖7(b))。 In the case of the build-up substrate shown in Figures 7(a) to (c), for example, a layered material of type A (see Figure 2(a)) or type C (see Figure 2(c)) formed by single-sided copper plating on PTFE is bonded to a core board (Figure 7(a)). Then, through holes are formed by laser processing, and electroless copper plating is performed on the through holes to make the core board and the single-sided copper plating of PTFE conductive (Figure 7(b)).

因為藉由鍍覆在PTFE上形成銅層,故例如可將PTFE的銅鍍覆之厚度設為0.5μm以下,而可藉由半加成工法對應更精密的間距電路(圖7(c))。 Since the copper layer is formed on PTFE by plating, the thickness of the copper plating on PTFE can be set to less than 0.5μm, for example, and a more precise pitch circuit can be supported by the semi-additive process (Figure 7(c)).

以往的RCC中係使用在銅箔上塗布環氧樹脂(接著劑)而成者,但銅箔的情況中,再薄還是有1至2μm而比本實施型態中形成之銅鍍覆層更厚,而且非常昂貴。因此,即使以此材料進行半加成工法,最終藉由蝕刻將種子層的Cu(1至2μm)溶解時,電路部分亦被削減2μm左右,而無法使用於精密圖案。此點在本實施型態中,如上所述適用於精密圖案的形成。又,本實施型態中使用的氟樹脂膜,由於不含有先前技術的段落中所提到的玻璃布等雜質,因此亦容易以雷射進行開孔加工。 In the past, RCC was made by coating epoxy resin (adhesive) on copper foil. However, in the case of copper foil, no matter how thin it is, it is still 1 to 2μm, which is thicker than the copper plating layer formed in this embodiment, and it is very expensive. Therefore, even if this material is used for semi-additive processing, when the Cu (1 to 2μm) of the seed layer is finally dissolved by etching, the circuit part is also reduced by about 2μm, and it cannot be used for precise patterns. This point is applicable to the formation of precise patterns in this embodiment as described above. In addition, the fluororesin film used in this embodiment does not contain impurities such as glass cloth mentioned in the previous technical paragraph, so it is also easy to open holes with laser.

形成用作為基材之氟樹脂膜的氟樹脂較佳係選自聚四氟乙烯(4氟化)(PTFE)、四氟乙烯-全氟烷基乙烯醚共聚物(PFA)、四氟乙烯-六氟丙烯共聚物(4.6氟化)(FEP)、四氟乙烯-乙烯共聚物(ETFE)、聚偏二氟乙烯(2氟化)(PVDF)、聚氯三氟乙烯(3氟化)(PCTFE)或三氟氯乙烯-乙烯共聚物(ECTFE)。又,氟樹脂膜中較佳係不含有玻璃布或聚醯亞胺清漆等用以提升接著性的雜質。若含有此等雜質,則介電損耗正切上升。尤其更佳為介電損耗正切未達0.001的聚四氟乙烯(4氟化)(PTFE)、四氟乙烯-全氟烷基乙烯醚共聚物(PFA)。 The fluororesin used to form the fluororesin film used as the substrate is preferably selected from polytetrafluoroethylene (4 fluorinated) (PTFE), tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer (PFA), tetrafluoroethylene-hexafluoropropylene copolymer (4.6 fluorinated) (FEP), tetrafluoroethylene-ethylene copolymer (ETFE), polyvinylidene fluoride (2 fluorinated) (PVDF), polychlorotrifluoroethylene (3 fluorinated) (PCTFE) or chlorotrifluoroethylene-ethylene copolymer (ECTFE). In addition, the fluororesin film preferably does not contain impurities such as glass cloth or polyimide varnish for improving adhesion. If such impurities are contained, the dielectric loss tangent increases. In particular, polytetrafluoroethylene (4 fluorinated) (PTFE) and tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer (PFA) having a dielectric loss tangent of less than 0.001 are more preferred.

圖2至圖5所示之層構成材的製造步驟大致如上所述。雖有一部分的說明重複,但更詳細而言,此層構成材中所使用的本實施型態之導電性膜係以下述方法製造。首先,對於作為基材的氟樹脂膜進行脫脂處 理後,實施表面改質處理。然後進行離子系、膠體系的觸媒賦予處理、加速處理之後,以無電鍍銅或無電鍍鎳進行還原析出,再進行電鍍銅或電鍍鎳而形成既定厚度的導電被膜,藉此進行製造。 The manufacturing steps of the layered component shown in Figures 2 to 5 are roughly as described above. Although some of the descriptions are repeated, in more detail, the conductive film of this embodiment used in this layered component is manufactured by the following method. First, the fluororesin film as the substrate is degreased and then subjected to surface modification. Then, after ion-based or colloidal catalyst treatment and acceleration treatment, reduction precipitation is performed by electroless copper plating or electroless nickel plating, and then copper or nickel is electroplated to form a conductive film of a predetermined thickness, thereby manufacturing.

此處,表面改質處理可使用電漿處理、UV處理、鈉處理、化學性處理等。電漿處理可採用低溫電漿,但真空電漿及大氣壓電漿的種類並未限定,且進行電漿化的氣體種類亦未限定,可採用氧、氮、氦、氬、氨等。化學性處理可列舉藉由界面活性劑使表面電位成為陽離子性或陰離子性的處理。 Here, the surface modification treatment may include plasma treatment, UV treatment, sodium treatment, chemical treatment, etc. Plasma treatment may use low-temperature plasma, but the types of vacuum plasma and atmospheric pressure plasma are not limited, and the type of gas used for plasma treatment is also not limited, and oxygen, nitrogen, helium, argon, ammonia, etc. may be used. Chemical treatment may include treatment that uses surfactants to make the surface potential cationic or anionic.

又,觸媒賦予處理例如係藉由將進行了表面改質處理的氟樹脂膜浸漬於觸媒液(較佳為鈀系觸媒液)中而實施,之後進行加速處理。加速處理中,較佳係使用熱硫酸的溶液作為加速劑。加速劑更佳為溫度加熱至40至80℃的濃度10至30容量%之硫酸溶液。浸漬於硫酸溶液的時間較佳為1至5分鐘的範圍。藉由進行這樣的觸媒賦予處理、加速處理,可提高觸媒於氟樹脂膜表面的附著、活化的確實性。又,藉由以熱硫酸進行加速處理,亦可抑制導電性膜的熱應力。 In addition, the catalyst treatment is carried out, for example, by immersing the fluororesin film that has undergone surface modification treatment in a catalyst solution (preferably a palladium-based catalyst solution), and then performing an accelerated treatment. In the accelerated treatment, it is preferred to use a hot sulfuric acid solution as an accelerator. The accelerator is preferably a sulfuric acid solution with a concentration of 10 to 30% by volume heated to 40 to 80°C. The immersion time in the sulfuric acid solution is preferably in the range of 1 to 5 minutes. By performing such a catalyst treatment and accelerated treatment, the adhesion and activation of the catalyst on the surface of the fluororesin film can be improved. In addition, by performing an accelerated treatment with hot sulfuric acid, the thermal stress of the conductive film can also be suppressed.

(剝離試驗) (Peel-off test)

對於經由電漿處理進行表面改質的氟樹脂膜,進行賦予鈀的處理以作為觸媒,之後使用將濃度20容量%的硫酸溶液加熱至55℃而成者作為加速劑,以浸漬時間1分鐘進行加速處理,並進行無電鍍覆、電鍍而在氟樹脂膜的表面上形成導電被膜,以製作導電性膜的試料。各試料的導電被膜之厚度為5至12μm。針對各試料測定由鍍覆構成之導電被膜相對於基材(氟樹脂膜)的剝離強度。剝離強度係藉由依照JIS C 6471的180度剝離試 驗(夾頭速度50mm/min,衝程10mm)測定。儘管以氟樹脂膜作為基材,剝離強度仍皆在5至15N/cm的範圍。 The fluororesin film surface modified by plasma treatment was treated with palladium as a catalyst, and then a sulfuric acid solution with a concentration of 20% by volume heated to 55°C was used as an accelerator. The accelerated treatment was performed with an immersion time of 1 minute, and electroless plating and electroplating were performed to form a conductive film on the surface of the fluororesin film to produce conductive film samples. The thickness of the conductive film of each sample was 5 to 12μm. The peel strength of the conductive film formed by plating relative to the substrate (fluororesin film) was measured for each sample. The peel strength is measured by a 180-degree peel test (chuck speed 50 mm/min, stroke 10 mm) in accordance with JIS C 6471. Although the fluororesin film is used as the substrate, the peel strength is still in the range of 5 to 15 N/cm.

具體如以下所述。 The details are as follows.

Figure 113135808-A0202-12-0011-1
Figure 113135808-A0202-12-0011-1

剝離強度若為5N/cm以上,則在實用上幾乎不會產生對於熱的剝離等問題,但較佳為6N/cm以上,更佳為8N/cm以上。 If the peeling strength is 5N/cm or more, there will be almost no problems such as thermal peeling in practice, but it is preferably 6N/cm or more, and more preferably 8N/cm or more.

另外,氟樹脂之中,作為高頻天線模組用可撓性電路基板、高速傳輸用可撓性纜線、半導體封裝用基板、多層基板、SLP(Substrate-Like PCB)用者,如上所述,較佳為使用介電損耗正切未達0.001的全氟烷氧基氟樹脂(PFA)、聚四氟乙烯(PTFE)。聚偏二氟乙烯樹脂(PVDF)的介電損耗正切雖為較高的0.01以上,但因為具備壓電功能,故宜用作為利用壓電功能的各種致動器。 In addition, among fluororesins, as mentioned above, it is better to use perfluoroalkoxy fluorine resin (PFA) and polytetrafluoroethylene (PTFE) with a dielectric loss tangent of less than 0.001 for flexible circuit substrates for high-frequency antenna modules, flexible cables for high-speed transmission, substrates for semiconductor packaging, multi-layer substrates, and SLP (Substrate-Like PCB). Although the dielectric loss tangent of polyvinylidene fluoride resin (PVDF) is higher than 0.01, it has piezoelectric function and is suitable for various actuators that utilize piezoelectric function.

Claims (14)

一種導電性膜,係在氟樹脂膜的至少一面上藉由鍍覆處理而形成有導電被膜, A conductive film is formed by plating at least one side of a fluororesin film to form a conductive coating. 前述導電被膜相對於前述氟樹脂膜的剝離強度為5至15N/cm的範圍。 The peeling strength of the conductive film relative to the fluororesin film is in the range of 5 to 15 N/cm. 如請求項1所述之導電性膜,係用作為以前述氟樹脂膜作為絕緣層並以前述導電被膜作為導電層的增層基板之層構成材。 The conductive film as described in claim 1 is used as a layer constituent material of a build-up substrate having the aforementioned fluororesin film as an insulating layer and the aforementioned conductive coating as a conductive layer. 如請求項2所述之導電性膜,係以在前述氟樹脂膜的一面上形成前述導電被膜並且另一面為經過表面改質處理之面的型態提供作為前述層構成材。 The conductive film as described in claim 2 is provided as the aforementioned layer constituent material in a form in which the aforementioned conductive coating is formed on one side of the aforementioned fluororesin film and the other side is a surface that has undergone surface modification treatment. 如請求項2所述之導電性膜,係以在前述氟樹脂膜的雙面上形成前述導電被膜的型態提供作為前述層構成材。 The conductive film as described in claim 2 is provided as the aforementioned layer constituent material in the form of the aforementioned conductive coating formed on both sides of the aforementioned fluororesin film. 如請求項2所述之導電性膜,係以在前述氟樹脂膜的一面上形成前述導電被膜並且在另一面上依序積層接合片及保護膜的型態提供作為前述層構成材。 The conductive film as described in claim 2 is provided as the aforementioned layer constituent material in the form of forming the aforementioned conductive coating on one surface of the aforementioned fluororesin film and sequentially laminating a bonding sheet and a protective film on the other surface. 如請求項1所述之導電性膜,其中,形成前述氟樹脂膜的氟樹脂係選自聚四氟乙烯(4氟化)(PTFE)、四氟乙烯-全氟烷基乙烯醚共聚物(PFA)、四氟乙烯-六氟丙烯共聚物(4.6氟化)(FEP)、四氟乙烯-乙烯共聚物(ETFE)、聚偏二氟乙烯(2氟化)(PVDF)、聚氯三氟乙烯(3氟化)(PCTFE)或三氟氯乙烯-乙烯共聚物(ECTFE)。 The conductive film as described in claim 1, wherein the fluororesin forming the aforementioned fluororesin film is selected from polytetrafluoroethylene (4-fluorinated) (PTFE), tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer (PFA), tetrafluoroethylene-hexafluoropropylene copolymer (4.6-fluorinated) (FEP), tetrafluoroethylene-ethylene copolymer (ETFE), polyvinylidene fluoride (2-fluorinated) (PVDF), polychlorotrifluoroethylene (3-fluorinated) (PCTFE) or chlorotrifluoroethylene-ethylene copolymer (ECTFE). 如請求項6所述之導電性膜,其介電損耗正切未達0.001。 The dielectric loss tangent of the conductive film described in claim 6 is less than 0.001. 如請求項6所述之導電性膜,其中,前述氟樹脂膜不含有用以提升接著性的雜質。 The conductive film as described in claim 6, wherein the fluororesin film does not contain impurities useful for improving adhesion. 如請求項1至8中任一項所述之導電性膜,係用於高頻天線模組用可撓性電路基板、高速傳輸用可撓性纜線、半導體封裝用基板、多層基板、類基板印刷電路板、致動器。 The conductive film as described in any one of claims 1 to 8 is used for a flexible circuit substrate for a high-frequency antenna module, a flexible cable for high-speed transmission, a substrate for semiconductor packaging, a multi-layer substrate, a substrate-like printed circuit board, and an actuator. 一種導電性膜之製造方法,係藉由鍍覆處理在氟樹脂膜的至少一面上形成導電被膜以製造導電性膜的方法,其中,前述鍍覆處理係依照下述順序進行: A method for manufacturing a conductive film is a method for manufacturing a conductive film by forming a conductive coating on at least one side of a fluororesin film through a plating process, wherein the plating process is performed in the following order: 前述氟樹脂膜的表面改質處理; Surface modification treatment of the aforementioned fluororesin film; 觸媒賦予處理; The catalyst is handled; 加速處理; Accelerate processing; 無電鍍銅或無電鍍鎳;及 Electroless copper or electroless nickel; and 電鍍銅或電鍍鎳。 Electroplated copper or electroplated nickel. 如請求項10所述之導電性膜之製造方法,其中,前述加速處理中所使用的加速劑為熱硫酸的溶液。 The method for manufacturing a conductive film as described in claim 10, wherein the accelerator used in the aforementioned acceleration treatment is a hot sulfuric acid solution. 如請求項11所述之導電性膜之製造方法,其中,前述熱硫酸的溶液為溫度加熱至40至80℃的濃度10至30容量%之硫酸溶液。 The method for manufacturing a conductive film as described in claim 11, wherein the hot sulfuric acid solution is a sulfuric acid solution with a concentration of 10 to 30 volume % heated to 40 to 80°C. 如請求項12所述之導電性膜之製造方法,其中,浸漬於前述硫酸溶液的時間為1至5分鐘。 The method for manufacturing a conductive film as described in claim 12, wherein the immersion time in the aforementioned sulfuric acid solution is 1 to 5 minutes. 如請求項10所述之導電性膜之製造方法,其中,形成前述氟樹脂膜的氟樹脂係選自聚四氟乙烯(4氟化)(PTFE)、四氟乙烯-全氟烷基乙烯醚共聚物(PFA)、四氟乙烯-六氟丙烯共聚物(4.6氟化)(FEP)、四氟乙烯-乙烯共聚物(ETFE)、聚偏二氟乙烯(2氟化)(PVDF)、聚氯三氟乙烯(3氟化)(PCTFE)或三氟氯乙烯-乙烯共聚物(ECTFE)。 A method for manufacturing a conductive film as described in claim 10, wherein the fluororesin forming the aforementioned fluororesin film is selected from polytetrafluoroethylene (4-fluorinated) (PTFE), tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer (PFA), tetrafluoroethylene-hexafluoropropylene copolymer (4.6-fluorinated) (FEP), tetrafluoroethylene-ethylene copolymer (ETFE), polyvinylidene fluoride (2-fluorinated) (PVDF), polychlorotrifluoroethylene (3-fluorinated) (PCTFE) or chlorotrifluoroethylene-ethylene copolymer (ECTFE).
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