TW202527603A - Euv source vessel heated gas delivery apparatus and method - Google Patents
Euv source vessel heated gas delivery apparatus and method Download PDFInfo
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- H—ELECTRICITY
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Abstract
Description
本揭示係關於一種極紫外線(「EUV」)源容器,其具有用於將加熱氣體遞送至源容器中之裝置,且係關於將加熱氣體遞送至源容器中之方法。The present disclosure relates to an extreme ultraviolet ("EUV") source container having an apparatus for delivering a heated gas into the source container, and to a method of delivering a heated gas into the source container.
極紫外線(「EUV」)光(亦即波長為約50 nm或更小之電磁輻射(有時亦稱為軟x射線),包括波長為約13.5 nm之輻射)可用於微影程序以在基板(諸如矽晶圓)中或上產生極小特徵。用於產生EUV光之方法包括將目標材料轉換成電漿狀態。目標材料包括具有在電磁光譜之EUV部分中之一或多條發射譜線的至少一種元素,例如氙、鋰或錫。目標材料可為固體、液體或氣體。在一種通常稱為雷射產生電漿(「LPP」)之此方法中,可藉由使用「源」雷射,通常為發射波長處於或為約10,600奈米(nm)之紅外線光的CO 2雷射來產生所需電漿以用一或多個光脈衝輻照含有一或多個EUV線發射元件之目標。電漿通常產生於通常為真空腔室之經密封「源容器」中。 Extreme ultraviolet (EUV) light (i.e., electromagnetic radiation (sometimes also called soft x-rays) with a wavelength of approximately 50 nm or less, including radiation with a wavelength of approximately 13.5 nm) can be used in lithography processes to create extremely small features in or on substrates such as silicon wafers. Methods for generating EUV light include converting a target material into a plasma state. The target material includes at least one element, such as xenon, lithium, or tin, having one or more emission lines in the EUV portion of the electromagnetic spectrum. The target material can be a solid, liquid, or gas. In one such method, often referred to as laser-produced plasma (LPP), the plasma required to irradiate a target containing one or more EUV light-emitting elements with one or more pulsed pulses is generated using a "source" laser, typically a CO2 laser emitting infrared light at a wavelength of about 10,600 nanometers (nm). The plasma is typically generated in a sealed "source vessel," typically a vacuum chamber.
由源容器內部之目標材料產生電漿可產生蒸汽、離子及微粒子以及其他碎片,該等蒸汽、離子及微粒子以其他碎片可沉積於源容器內部之表面上且污染該等表面,包括光學表面。因此,需要自源容器移除一或多種殘餘目標材料,以減少或消除源容器內之表面污染,需求通常藉由使用引入至源容器中且隨後與一或多種殘餘目標材料一起自源容器中移除的氣流來至少部分地滿足需要。The generation of a plasma from a target material within a source container can generate vapors, ions, particles, and other debris that can deposit on and contaminate surfaces within the source container, including optical surfaces. Consequently, it is desirable to remove the one or more residual target materials from the source container to reduce or eliminate surface contamination within the source container. This need is typically at least partially met through the use of a gas stream that is introduced into the source container and subsequently removed from the source container along with the one or more residual target materials.
在一些一般態樣中,提供一種用於產生極紫外線(EUV)輻射之系統,該系統包括:一源容器,其具有一內部體積;一源雷射,其經組態以產生在沿著一光軸之一進入光方向上進入該內部體積之光,以向一目標提供能量以在該內部體積內引起該EUV產生;及一加熱氣體遞送裝置,其安置於該內部體積內且經組態以將加熱氣體遞送至該內部體積中,該加熱氣體遞送裝置定位於該光軸上且沿著該光軸延伸,該加熱氣體遞送裝置具有用以將該加熱氣體分配至該內部體積中之出口及用以自該源雷射接收光以加熱該加熱氣體遞送裝置的一或多個入口開口。In some general aspects, a system for generating extreme ultraviolet (EUV) radiation is provided, the system comprising: a source container having an inner volume; a source laser configured to generate light into the inner volume in an incoming light direction along an optical axis to provide energy to a target to induce EUV generation within the inner volume; and a heated gas delivery system. A device is disposed within the inner volume and configured to deliver heated gas into the inner volume, the heated gas delivery device being positioned on and extending along the optical axis, the heated gas delivery device having an outlet for distributing the heated gas into the inner volume and one or more inlet openings for receiving light from the source laser to heat the heated gas delivery device.
實施可包括以下特徵中之一或多者。該加熱氣體遞送裝置可進一步包括一內部表面,該內部表面對於該源雷射之該光之一反射率等於或小於0.9,以吸收通過該一或多個入口開口自該源雷射接收到之該光中的至少一些。該加熱氣體遞送裝置可進一步包括一錐形內部表面,該錐形內部表面用以接收、部分地反射一或多次及至少部分地吸收通過該一或多個入口開口自該源雷射接收到之該光。該錐形內部表面可為或可包括一圓錐形內部表面。Implementations may include one or more of the following features. The heated gas delivery device may further include an inner surface having a reflectivity for the light from the source laser equal to or less than 0.9 to absorb at least some of the light received from the source laser through the one or more inlet openings. The heated gas delivery device may further include a tapered inner surface to receive, partially reflect one or more times, and at least partially absorb the light received from the source laser through the one or more inlet openings. The tapered inner surface may be or may include a circular conical inner surface.
該系統可進一步包括一加熱氣體源,該加熱氣體源連接至該加熱氣體遞送裝置以將加熱氣體遞送至該加熱氣體遞送裝置。該加熱氣體源可定位於該內部體積外部。The system may further include a heated gas source connected to the heated gas delivery device to deliver heated gas to the heated gas delivery device. The heated gas source may be located outside the inner volume.
該加熱氣體遞送裝置可進一步包括連接至該等出口之一氣體管道。該加熱氣體遞送裝置可進一步包括一加熱元件,該加熱元件經組態以加熱該加熱氣體遞送裝置及/或由該加熱氣體遞送裝置遞送之氣體。The heated gas delivery device may further include a gas pipe connected to the outlets. The heated gas delivery device may further include a heating element configured to heat the heated gas delivery device and/or the gas delivered by the heated gas delivery device.
該系統可進一步包括一收集器,該收集器經組態以將在該收集器之一主焦點處或其附近產生之EUV光反射至該收集器之一中間焦點,其中該收集器具有與該光軸基本上重合的一光學軸及沿著該光學軸之一穿孔,該穿孔經組態以允許該光進入該內部體積,使得自該收集器反射之大部分或所有EUV光(1)在具有該收集器之周邊作為一底座且具有該中間焦點作為一頂點的一第一近似圓錐體之一體積內,且(2)在具有該穿孔作為一底座且具有該中間焦點作為一頂點之一第二近似圓錐體的一體積外自該收集器行進至該中間焦點,且其中該加熱氣體遞送裝置沿著該光軸安置於該第二近似圓錐體內。該加熱氣體遞送裝置可具有一圓錐形外部表面,當該加熱氣體遞送裝置處於一操作溫度時,該圓錐形外部表面與該第二近似圓錐體之表面間隔開,使得該外部表面在操作時不會撞擊該第二近似圓錐體。The system may further include a collector configured to reflect EUV light generated at or near a principal focus of the collector to an intermediate focus of the collector, wherein the collector has an optical axis substantially coincident with the optical axis and a through-hole along the optical axis, the through-hole configured to allow the light to enter the interior volume such that most or all of the EUV light reflected from the collector (1) is within a volume that is a first approximate cone having the periphery of the collector as a base and the intermediate focus as an apex, and (2) travels from the collector to the intermediate focus outside a volume that is a second approximate cone having the through-hole as a base and the intermediate focus as an apex, and wherein the heated gas delivery device is disposed within the second approximate cone along the optical axis. The heated gas delivery device may have a conical outer surface that is spaced apart from the surface of the second approximately cone when the heated gas delivery device is at an operating temperature so that the outer surface does not impact the second approximately cone during operation.
該加熱氣體遞送裝置可沿著該光軸延伸在90至110公分之一範圍內之一距離。該加熱氣體遞送裝置可沿著該光軸延伸在沿著該光軸自該主焦點至該中間焦點之一距離的50%至70%之一範圍內之一距離。該加熱氣體遞送裝置之該等出口中的至少一些可定位於該加熱氣體遞送裝置之一圓錐形外部表面中,其中該圓錐形外部表面在沿著該光軸之一方向上變窄且延伸遠離該進入光方向。The heated gas delivery device may extend a distance along the optical axis in a range of 90 to 110 centimeters. The heated gas delivery device may extend a distance along the optical axis in a range of 50% to 70% of a distance along the optical axis from the primary focal point to the intermediate focal point. At least some of the outlets of the heated gas delivery device may be positioned in a conical outer surface of the heated gas delivery device, wherein the conical outer surface narrows in a direction along the optical axis and extends away from the incoming light direction.
在一些額外一般態樣中,提供一種用於提供極紫外線(EUV)輻射之程序,該程序包括:在一源容器之內部體積內,用來自一源雷射之光輻照一目標以產生一產生EUV的電漿;藉由沿著一經反射EUV路徑反射來自該電漿之EUV光而在該內部體積內產生經反射EUV光;將來自該源雷射之光接收至一加熱氣體遞送裝置中以加熱該加熱氣體遞送裝置;及沿著該經反射EUV路徑將來自該加熱氣體遞送裝置之加熱氣體遞送至該源容器之該內部體積中。In some additional general aspects, a process for providing extreme ultraviolet (EUV) radiation is provided, the process comprising: irradiating a target within an interior volume of a source container with light from a source laser to generate an EUV-generating plasma; generating reflected EUV light within the interior volume by reflecting EUV light from the plasma along a reflected EUV path; receiving the light from the source laser into a heated gas delivery device to heat the heated gas delivery device; and delivering heated gas from the heated gas delivery device along the reflected EUV path into the interior volume of the source container.
實施可包括以下特徵中之一或多者。該加熱氣體遞送裝置之一側可包括出口。該加熱氣體遞送裝置可包括或可具有在朝向該收集器之一中間焦點的一方向上變窄之一圓錐形形狀。該加熱氣體遞送裝置可在平行於該源雷射之一光軸的一方向上延伸在90公分至110公分之範圍內之一距離。該加熱氣體遞送裝置在平行於該源雷射之一光軸的一方向上延伸在自該收集器之一主焦點至一中間焦點之一距離的50%至70%。Implementations may include one or more of the following features. A side of the heated gas delivery device may include an outlet. The heated gas delivery device may include or have a conical shape that narrows in a direction toward a central focus of the collector. The heated gas delivery device may extend a distance in a range of 90 cm to 110 cm in a direction parallel to an optical axis of the source laser. The heated gas delivery device extends 50% to 70% of a distance from a primary focus to a central focus of the collector in a direction parallel to an optical axis of the source laser.
一或多個實施之細節闡述於以下附圖及描述中。其他特徵將自描述及圖式且自申請專利範圍而顯而易見。The details of one or more implementations are set forth in the accompanying drawings and the description below. Other features will be apparent from the description and drawings, and from the claims.
圖1A為EUV光源110之實施之一些組件的簡化示意性橫截面視圖。如由參考座標軸所展示,在x-z平面中截取圖1A中之EUV光源110之橫截面,其中x在頁平面之向上方向上為正,且z在頁平面之右側為正,z軸與下文將描述之源雷射112之光軸A對準。FIG1A is a simplified schematic cross-sectional view of some components of an implementation of an EUV light source 110. As shown by the reference axes, the cross-section of the EUV light source 110 in FIG1A is taken in the x-z plane, where x is positive in an upward direction relative to the plane of the page and z is positive to the right of the plane of the page, and the z-axis is aligned with the optical axis A of the source laser 112, which will be described below.
如圖1A中所展示,EUV光源110包括源雷射112,該源雷射用於產生光脈衝(例如,雷射脈衝)光束113且將光束113自源雷射112遞送至源容器111之內部體積114中,以單獨地輻照位於輻照位點116處或附近之目標115。目標115在頁平面中自目標遞送系統117a向下(在負x方向上)行進至輻照位點116。源容器111具有包圍內部體積114之內部表面156。 As shown in FIG1A , EUV light source 110 includes a source laser 112 for generating a pulsed (e.g., laser pulse) beam 113 and delivering beam 113 from source laser 112 into an interior volume 114 of a source container 111 to individually irradiate a target 115 located at or near an irradiation site 116. Target 115 travels downward (in the negative x-direction) in the plane of the page from a target delivery system 117a to irradiation site 116. Source container 111 has an interior surface 156 surrounding interior volume 114.
亦如圖1A中所展示,EUV光源110包括目標遞送系統117a,該目標遞送系統將目標115遞送至源容器111之內部114中至輻照位點116。在輻照位點116處,目標115與(光束113之)一或多個光脈衝個別地相互作用以產生電漿118,該電漿產生EUV光119 (在圖中用由參考字元119指示之邊界射線表示)。來自電漿118之輻射、目標115之位置及其他資料可由一或多個度量衡器件150監測,且由一或多個度量衡器件150收集到之資訊可用於控制及操作EUV光源110。As also shown in FIG1A , the EUV light source 110 includes a target delivery system 117 a that delivers a target 115 into the interior 114 of the source container 111 to an irradiation site 116. At the irradiation site 116, the target 115 interacts individually with one or more pulses (of the beam 113) to generate a plasma 118, which generates EUV light 119 (represented in the figure by the boundary rays indicated by reference character 119). The radiation from the plasma 118, the position of the target 115, and other data can be monitored by one or more metrology devices 150, and the information collected by the one or more metrology devices 150 can be used to control and operate the EUV light source 110.
可沿著目標115行進穿過目標護罩115s之至少部分遞送該等目標。護罩115s可呈管(其可具有用於度量衡之孔徑)或其他屏蔽結構形式,該屏蔽結構屏蔽或部分地屏蔽進入目標115以免受源容器111之內部體積114中的氣體及其他材料影響,使得目標115之軌跡不受此等氣體或其他材料過度干擾。目標115中未使用之目標(諸如未轉化成電漿118之目標)可經捕捉於目標截留器117b中。The targets 115 may be conveyed along at least a portion of the target shield 115s through which they travel. The shield 115s may be in the form of a tube (which may have an aperture for metrology) or other shielding structure that shields or partially shields the targets 115 from gases and other materials within the interior volume 114 of the source container 111, such that the trajectory of the targets 115 is not excessively disturbed by such gases or other materials. Unused portions of the targets 115 (e.g., those not converted into plasma 118) may be captured in a target trap 117b.
目標115為或包括EUV發射目標材料,諸如但未必限於錫、鋰、氙或其組合。目標115可呈液滴形式,或替代地可為固體粒子或含有固體粒子之液滴。舉例而言,元素錫可以如下形式作為目標存在:純錫;錫化合物(諸如SnBr 4、SnBr 2、SnH 4);錫合金(例如錫鎵合金、錫銦合金或錫銦鎵合金);或其組合。 Target 115 is or includes an EUV emission target material, such as, but not necessarily limited to, tin, lithium, xenon, or a combination thereof. Target 115 may be in the form of liquid droplets, or alternatively, may be solid particles or liquid droplets containing solid particles. For example, elemental tin may be present as a target in the following forms: pure tin; a tin compound (such as SnBr4 , SnBr2 , SnH4 ); a tin alloy (e.g., tin-gallium alloy, tin-indium alloy, or tin-indium-gallium alloy); or a combination thereof.
EUV光源110亦可包括收集器120,該收集器將EUV光119重定向為經重定向EUV光124。收集器120可為具有與光軸A重合之光學軸及反射表面121的近正入射收集器鏡。反射表面121可呈長球體(亦即,繞其長軸旋轉之橢圓)之形式,使得收集器120具有在輻照位點116內或附近之第一或主焦點122及在所謂中間焦點123處之第二焦點,其中收集器之光學軸經定義為沿著光軸A在該等焦點間延伸的線。EUV光源110之源容器111因此至少部分地圍封體積114,其中,當使用EUV光源110及源容器111時,EUV光119由收集器120沿著軸A自主焦點122重定向(反射)至中間焦點123作為EUV光124。來自收集器120之經反射EUV光124可在中間焦點123處自EUV光源110輸出且輸入至利用EUV光124之器件,諸如微影曝光裝置(如圖2中所展示)。收集器120形成有呈穿過收集器120之穿孔125形式的孔徑,以允許由源雷射112產生之光脈衝之光束113穿過穿孔125且到達輻照位點116。穿孔125在來自收集器120之經反射EUV光124中沿著光學軸A產生陰影或大間隙154。The EUV light source 110 may also include a collector 120 that redirects the EUV light 119 into redirected EUV light 124. The collector 120 may be a near-normal-incidence collector mirror having an optical axis coinciding with the optical axis A and a reflective surface 121. The reflective surface 121 may be in the form of a prolate spheroid (i.e., an ellipse rotated about its long axis) such that the collector 120 has a first or principal focus 122 within or near the irradiation location 116 and a second focus at a so-called intermediate focus 123, with the optical axis of the collector being defined as a line extending along the optical axis A between the foci. The source container 111 of the EUV light source 110 thus at least partially encloses a volume 114, wherein, when the EUV light source 110 and the source container 111 are in use, EUV light 119 is redirected (reflected) by the collector 120 along axis A from the main focus 122 to the intermediate focus 123 as EUV light 124. The reflected EUV light 124 from the collector 120 can be output from the EUV light source 110 at the intermediate focus 123 and input into a device that utilizes the EUV light 124, such as a lithography exposure apparatus (as shown in FIG. 2 ). The collector 120 is formed with an aperture in the form of a through-hole 125 passing through the collector 120 to allow the light beam 113 of the light pulse generated by the source laser 112 to pass through the through-hole 125 and reach the irradiation site 116. The perforations 125 create a shadow or large gap 154 along the optical axis A in the reflected EUV light 124 from the collector 120 .
為了反射EUV光119,收集器120可呈多層鏡(MLM)形式,其中反射表面121具有具交替層之鉬與矽的分級多層塗層,且在一些狀況下具有一或多個高溫擴散障壁層、平滑層、罩蓋層及/或蝕刻終止層。除了長球體以外之其他表面形狀亦可用於反射表面121。舉例而言,反射表面121可替代地呈繞其長軸旋轉之抛物面形式。在實施中,反射表面121可經組態以遞送在中間焦點123處具有環形或其他橫截面之EUV光124之光束。在其他實施中,反射表面121可利用除了上文所描述之塗層及層以外的塗層及層。To reflect EUV light 119, collector 120 may be in the form of a multi-layer mirror (MLM), wherein reflective surface 121 has a graded multi-layer coating with alternating layers of molybdenum and silicon, and in some cases, one or more high-temperature diffusion barrier layers, smoothing layers, capping layers, and/or etch stop layers. Surface shapes other than prolate spheroids may also be used for reflective surface 121. For example, reflective surface 121 may alternatively be in the form of a parabola rotated about its long axis. In implementations, reflective surface 121 may be configured to deliver a beam of EUV light 124 having a toroidal or other cross-section at a central focus 123. In other implementations, the reflective surface 121 may utilize coatings and layers other than those described above.
收集器120之製造可為昂貴的。由EUV光源110產生之光的效率及功率取決於收集器120之反射表面121的品質。出於此等及其他原因,期望保護收集器120以免其反射表面121受到損壞。The collector 120 can be expensive to manufacture. The efficiency and power of the light produced by the EUV light source 110 depends on the quality of the reflective surface 121 of the collector 120. For these and other reasons, it is desirable to protect the collector 120 from damage to its reflective surface 121.
然而,收集器120必須置放於源容器111內之體積114內且接近於電漿118,以便收集及重定向EUV光119。源容器111內之結構(包括收集器120)可暴露於目標材料之高能離子及/或粒子及蒸汽或含有目標材料之高能離子及/或粒子及蒸汽。目標材料之粒子及高能離子及蒸汽(其基本上為來自基於光之氣化或切除製程的碎片或副產物)可污染收集器之經暴露反射表面121。目標材料之粒子及高能離子及蒸汽亦可導致收集器120之反射表面121的實體損壞及局部加熱。However, the collector 120 must be placed within the volume 114 within the source container 111 and in close proximity to the plasma 118 in order to collect and redirect the EUV light 119. The structures within the source container 111, including the collector 120, can be exposed to or contain energetic ions and/or particles and vapors of the target material. Particles and energetic ions and vapors of the target material (which are essentially debris or byproducts from light-based vaporization or ablation processes) can contaminate the exposed reflective surface 121 of the collector. Particles and energetic ions and vapors of the target material can also cause physical damage and localized heating of the reflective surface 121 of the collector 120.
亦如圖1A中所展示,EUV光源110可包括用於將光束113聚焦至輻照位點116處或其附近的焦點或光束腰之包括一或多個光學元件(未展示)之聚焦單元126。As also shown in FIG. 1A , the EUV light source 110 may include a focusing unit 126 including one or more optical elements (not shown) for focusing the light beam 113 to a focal point or beam waist at or near the irradiation location 116 .
圖2為展示EUV光源210 (諸如圖1A之EUV光源110或另一EUV源)以及微影曝光裝置271之實施的圖。微影曝光裝置271接收由EUV光源210產生之EUV光224,且在一或多個照明鏡面272中反射該EUV光以便照明反射圖案或倍縮光罩273。自圖案或倍縮光罩273反射之EUV光進一步由一或多個減光鏡274反射且縮減,且輻照於基板或晶圓275上(或基板或晶圓275上之一或多個感光層(未展示)上)以允許在基板或晶圓275中或在其上形成經圖案化結構。FIG2 is a diagram illustrating an embodiment of an EUV light source 210 (such as the EUV light source 110 of FIG1A or another EUV source) and a lithography exposure apparatus 271. The lithography exposure apparatus 271 receives EUV light 224 generated by the EUV light source 210 and reflects the EUV light at one or more illumination mirrors 272 to illuminate a reflective pattern or a zoom mask 273. The EUV light reflected from the pattern or zoom mask 273 is further reflected and reduced by one or more de-emitter mirrors 274 and irradiated onto a substrate or wafer 275 (or onto one or more photosensitive layers (not shown) on the substrate or wafer 275) to allow patterned structures to be formed in or on the substrate or wafer 275.
參考圖1A及圖2,微影曝光裝置271內之光學元件及感測器以及基板或晶圓275上之感光層通常對許多類型或甚至對任何類型的輻射敏感。因此,尤其考慮到由圖1A之源雷射112產生之高功率位準,重要的係,防止來自源雷射112的光脈衝之光束113之任何部分(包括圖1A中所展示的對應於光束113之延伸超出輻照位點116之部分的光束113e)到達中間焦點123且可能進入微影曝光裝置(諸如微影曝光裝置271)。1A and 2 , the optical components and sensors within the lithography exposure apparatus 271 and the photosensitive layer on the substrate or wafer 275 are generally sensitive to many types of radiation, or even any type of radiation. Therefore, particularly in view of the high power levels generated by the source laser 112 of FIG. 1A , it is important to prevent any portion of the beam 113 of the light pulse from the source laser 112 (including the beam 113 e shown in FIG. 1A , which corresponds to the portion of the beam 113 extending beyond the irradiation site 116 ) from reaching the intermediate focus 123 and potentially entering the lithography exposure apparatus (e.g., lithography exposure apparatus 271 ).
為此,如圖1A中所展示,可使用光束阻擋元件,諸如本揭示之遮蔽條127。遮蔽條127可包括底座128、自底座128延伸之軸桿129及支撐於軸桿129上之頭130。在使用遮蔽條127時,頭130定位於軸A上,如所展示,使得光學軸(及光軸) A與頭130相交。此外,頭130可經定位及經設定大小以適合於來自收集器120之經反射EUV光124中的陰影或大間隙154內。舉例而言,頭130可具有垂直於光學軸A截取之橫截面,該橫截面為圓形且以光學軸A為中心且與陰影或大間隙154匹配。此幾何形狀防止頭130阻擋自收集器120反射且經導向微影曝光裝置121之EUV光124的任何或任何重要部分,同時很好地保護中間焦點123免受源雷射112之脈衝之光束113的直接照明。換言之(關於在陰影或間隙154中之定位),頭130經定位而使得來自主焦點122之很少或無直接EUV光119由收集器120作為EUV光124反射至頭130。To this end, as shown in FIG1A , a beam stop element, such as the shield bar 127 of the present disclosure, can be used. The shield bar 127 can include a base 128, a shaft 129 extending from the base 128, and a head 130 supported on the shaft 129. When the shield bar 127 is used, the head 130 is positioned on axis A, as shown, so that the optical axis (and optical axis) A intersects the head 130. Furthermore, the head 130 can be positioned and sized to fit within a shadow or large gap 154 in the reflected EUV light 124 from the collector 120. For example, the head 130 can have a cross-section taken perpendicular to the optical axis A that is circular and centered on the optical axis A and matches the shadow or large gap 154. This geometry prevents the head 130 from blocking any or any significant portion of the EUV light 124 reflected from the collector 120 and directed toward the lithographic exposure apparatus 121, while also effectively protecting the intermediate focus 123 from direct illumination by the pulsed beam 113 of the source laser 112. In other words (with respect to positioning in the shadow or gap 154), the head 130 is positioned such that little or no direct EUV light 119 from the main focus 122 is reflected from the collector 120 toward the head 130 as EUV light 124.
在使用目標護罩115s之源容器中,如所展示,遮蔽條127之軸桿129可與護罩115s對準,亦即,該軸桿可儘可能地定位於由護罩115s在經反射EUV光124中產生之陰影內。換言之,當在收集器表面121之反射中自收集器120之主焦點122觀察時,軸桿129之影像可與護罩115s之影像對準。在一些實施中,軸桿129可完全隱藏於護罩115s之陰影中,如當在收集器表面121之反射中自收集器120之主焦點122觀察時,軸桿129之影像由護罩115s之影像隱藏時一樣。此配置減少或消除經反射EUV光124經軸桿129阻止離開EUV光源110的情形。In a source container using a target shield 115s, as shown, the shaft 129 of the masking strip 127 can be aligned with the shield 115s, that is, the shaft can be positioned as closely as possible within the shadow created by the shield 115s in the reflected EUV light 124. In other words, the image of the shaft 129 can be aligned with the image of the shield 115s when viewed from the primary focus 122 of the collector 120 in reflection from the collector surface 121. In some implementations, the shaft 129 can be completely hidden in the shadow of the shield 115s, as when the image of the shaft 129 is hidden by the image of the shield 115s when viewed from the primary focus 122 of the collector 120 in reflection from the collector surface 121. This configuration reduces or eliminates the situation where the reflected EUV light 124 is blocked from leaving the EUV light source 110 by the shaft 129.
加熱氣體遞送裝置136可經附接至遮蔽條127之頭130 (或,如下文所展示及論述,與遮蔽條127之頭130形成為單件)。如下文將展示,遮蔽條127之頭130可經附接至軸桿129或與軸桿129形成為單件。氣體供應通道131連接至遮蔽條127之底座128及軸桿129且連接至氣體(諸如氫氣(H 2)氣體132)之源131a,從而允許遮蔽條127用以通過加熱氣體供應裝置136將加熱氣體供應至源容器之內部體積114,該加熱氣體由箭頭HG表示。由箭頭HG表示之加熱氣體由接收至加熱氣體遞送裝置136中之光加熱,如下文將展示。在加熱氣體遞送裝置136之外部表面上接收到的之源雷射光及EUV光將產生一些額外加熱。視情況,可諸如藉由如所展示之氣體源131a及/或氣體供應通道131處或附近之加熱器131h或藉由下文進一步描述之遮蔽條127中及/或在遮蔽條頭130或加熱氣體遞送裝置136中之電阻性加熱來提供額外加熱。 A heated gas delivery device 136 can be attached to the head 130 of the shield bar 127 (or, as shown and discussed below, formed as a single piece with the head 130 of the shield bar 127). As will be shown below, the head 130 of the shield bar 127 can be attached to the shaft 129 or formed as a single piece with the shaft 129. A gas supply channel 131 is connected to the base 128 and shaft 129 of the shield bar 127 and to a source 131a of a gas, such as hydrogen ( H2 ) gas 132, thereby allowing the shield bar 127 to supply heated gas, represented by arrows HG, to the interior volume 114 of the source container via the heated gas supply device 136. The heated gas, represented by arrows HG, is heated by light received into the heated gas delivery device 136, as will be shown below. Source laser light and EUV light received on the exterior surfaces of the heated gas delivery device 136 will generate some additional heating. Optionally, additional heating can be provided, for example, by heaters 131h at or near the gas source 131a and/or gas supply channel 131, as shown, or by resistive heating in the shield bar 127 and/or in the shield bar header 130 or heated gas delivery device 136, as described further below.
圖1B為圖1之EUV光源110繞z軸旋轉90度以展示y-z平面(如由參考座標軸所指示)中之橫截面且旋轉使得在頁平面中重力向下之簡化示意性橫截面視圖。當使用時,如所展示,EUV源110可相對於重力傾斜,但亦可使用其他定向。在此視圖中,遮蔽條127之軸桿129及底座128位於頭130後方,進入頁中。同樣,在此視圖中,排氣埠133及相關聯排氣開口155為可見的。如所展示,排氣埠133為自源容器111延伸且界定排氣開口155的結構,該排氣開口與源容器111之內部114流體連通且自該內部延伸出來。可藉由一或多個真空泵(未展示)通過排氣埠133之排氣開口155自源容器111抽空氣體及夾帶離子、蒸汽及碎片。排氣開口155定位於收集器120與頭130之間,沿著光學軸A量測。FIG1B is a simplified schematic cross-sectional view of the EUV light source 110 of FIG1 rotated 90 degrees about the z-axis to show a cross-section in the y-z plane (as indicated by the reference axes) and rotated so that gravity is downward in the plane of the page. When in use, the EUV source 110 can be tilted relative to gravity as shown, but other orientations can also be used. In this view, the shaft 129 and base 128 of the shielding bar 127 are located behind the head 130, into the page. Also, in this view, the exhaust port 133 and associated exhaust opening 155 are visible. As shown, the exhaust port 133 is a structure extending from the source container 111 and defining the exhaust opening 155, which is in fluid communication with the interior 114 of the source container 111 and extends out from the interior. Gas and entrained ions, vapors, and debris may be evacuated from the source container 111 by one or more vacuum pumps (not shown) through an exhaust opening 155 of the exhaust port 133. The exhaust opening 155 is positioned between the collector 120 and the head 130, measured along the optical axis A.
亦如圖1B之實施中所展示,加熱氣體遞送裝置136與遮蔽條127之頭130形成為一單元。此實施中之加熱氣體遞送裝置136因此包括暴露於主焦點122之表面或「經暴露表面」134。經暴露表面134可為或可包括傾斜表面134s (意謂不垂直於軸線A之表面),且可通常面向排氣埠133之排氣開口155的方向及/或源容器111之內部表面156在排氣開口155之中間焦點側上的部分135之方向。As also shown in the embodiment of FIG1B , the heated gas delivery device 136 is formed as a unit with the head 130 of the shielding strip 127. The heated gas delivery device 136 in this embodiment thus includes a surface or "exposed surface" 134 exposed to the primary focal point 122. The exposed surface 134 may be or may include a slanted surface 134s (meaning a surface that is not perpendicular to the axis A) and may generally face in the direction of the exhaust opening 155 of the exhaust port 133 and/or in the direction of the portion 135 of the interior surface 156 of the source container 111 on the central focal point side of the exhaust opening 155.
可用於EUV光源110之各種氣流在圖中由輪廓型箭頭表示。在約50至約300帕斯卡(Pascal;Pa)之範圍內之壓力下的氣流(諸如氫氣(H 2)氣流)可在源容器111內用作用於碎片及/或蒸汽控制之緩衝氣體。考慮到源容器111之內部114中需要真空以避免氣體分子過度地吸收EUV光119、124,因此在不使用此等氣流之情況下,將難以充分保護收集器120免受來源於輻照位點116之目標材料碎片及蒸汽影響。氫氣(H 2)對於波長為約13.5 nm之EUV光為相對可穿透的,且因此通常比其他候選氣體(諸如在約13.5 nm下表現出較高吸收的氦氣、氬氣及其他氣體)更佳。 Various gas flows that can be used with the EUV light source 110 are indicated by outlined arrows in the figure. A gas flow at a pressure in the range of about 50 to about 300 Pascals (Pa), such as a hydrogen (H 2 ) gas flow, can be used within the source container 111 as a buffer gas for debris and/or vapor control. Without the use of such a gas flow, it would be difficult to adequately protect the collector 120 from target material debris and vapor originating from the irradiation site 116, given that a vacuum is required within the interior 114 of the source container 111 to prevent excessive absorption of EUV light 119, 124 by gas molecules. Hydrogen (H 2 ) is relatively transparent to EUV light at a wavelength of approximately 13.5 nm and is therefore often preferred over other candidate gases such as helium, argon, and other gases that exhibit high absorption at approximately 13.5 nm.
H 2氣體可經引入至源容器111中以減緩及導引藉由輻照目標115及輻照位點116及由所得電漿118產生之目標材料之高能碎片(離子、原子及團簇)。碎片藉由與氣體分子碰撞而減緩。收集器120之中心孔徑125處之H 2流CF可用於此目的。有時稱為「圓錐體流」CF,流CF可由管或噴嘴137或類似者自收集器120之中心處之孔徑125朝向重複產生電漿118之輻照位點116導引。此方向與自輻照位點116朝向收集器120之碎片軌跡相反,且圓錐體流CF因此用以減少對收集器120之由濺鍍目標材料之氣相沉積、植入及沉積造成的損壞。 H gas can be introduced into source vessel 111 to slow down and direct the high-energy fragments (ions, atoms, and clusters) of the target material generated by irradiating target 115 and irradiation site 116 and the resulting plasma 118. The fragments are slowed down by collisions with gas molecules. A flow CF of H at central aperture 125 of collector 120 can be used for this purpose. Sometimes referred to as a "conical flow" CF, the flow CF can be directed by a tube or nozzle 137 or the like from aperture 125 at the center of collector 120 toward irradiation site 116, where plasma 118 is repeatedly generated. This direction is opposite to the trajectory of the debris from the irradiation site 116 toward the collector 120, and the conical flow CF therefore serves to reduce damage to the collector 120 caused by vapor deposition, implantation, and deposition of the sputtering target material.
可(自出口(未展示))沿著收集器120之表面引導通常稱為傘狀流139之氣流。所謂蓮蓬頭流(其中氣體流動穿過大體上垂直於待保護表面之多個平行孔徑) (諸如蓮蓬頭流S1及蓮蓬頭流S2)可設置於源容器111之最接近收集器120之區域中。在諸如中間焦點123附近之區之額外區中,可通過瞄準具有沿著或平行於待保護表面之分量之方向的孔徑引入平行於待保護表面或具有平行於待保護表面引導之流分量的保護氣流。舉例而言,可引入氣流(諸如氣流F1、F2、F3及F4)以保護源容器111在靠近中間焦點123之區中的內部表面156。A gas flow, often referred to as an umbrella flow 139, can be directed (from an outlet (not shown)) along the surface of the collector 120. So-called showerhead flows (in which gas flows through a plurality of parallel apertures oriented generally perpendicular to the surface to be protected) (such as showerhead flow S1 and showerhead flow S2) can be provided in the region of the source container 111 closest to the collector 120. In additional regions, such as the region near the central focal point 123, a shielding gas flow parallel to the surface to be protected or having a flow component directed parallel to the surface to be protected can be introduced by aiming the apertures in a direction having a component along or parallel to the surface to be protected. For example, gas flows (such as gas flows F1, F2, F3, and F4) may be introduced to protect the interior surface 156 of the source container 111 in a region near the intermediate focus 123.
通常稱為動態氣鎖(「DGL」)之氣流為用以防止任何材料在中間焦點123之區中離開EUV源110的一或多種氣流。DGL可產生自中間焦點123之區域朝向輻照位點116之氣流(諸如DGL流138),該流138亦可稱為「中間焦點保護」氣流138。A dynamic gas lock ("DGL") is a gas flow or flows that are used to prevent any material from leaving the EUV source 110 in the region of the intermediate focus 123. The DGL can generate a gas flow (such as DGL flow 138) from the region of the intermediate focus 123 toward the irradiation site 116. This flow 138 can also be referred to as a "mid-focus protection" gas flow 138.
自收集器120流出之穩定導引含碎片流140可由圓錐體流CF以及傘狀流139及蓮蓬頭流S1及S2 (及視情況選用之未展示的其他流)形成且維持。圖1C中之實曲線繪示含碎片之導引流140之實例邊界。此導引流140有助於含有且帶走在電漿118之產生期間由目標115產生之收集器120材料,包括蒸汽、離子以及微粒子及奈米粒子。A stable, guided debris-laden stream 140 exiting the collector 120 can be formed and maintained by the cone flow CF, umbrella flow 139, and showerhead flows S1 and S2 (and other flows not shown, as appropriate). The solid curve in FIG1C illustrates an example boundary of the debris-laden guided stream 140. This guided stream 140 helps contain and carry away collector 120 materials generated by the target 115 during the generation of the plasma 118, including vapor, ions, and micro- and nanoparticles.
自中間焦點123朝向收集器120移動之相對流141可主要由DGL流138連同來自加熱氣體遞送裝置136之加熱氣體(箭頭HG)及流(諸如流(「幕」流) F1、F2、F3及F4) (及視情況未展示之其他流)形成。彎曲邊界線141b連同容器111在圖上部部分中之內部表面156表示相對流141之實例邊界。加熱氣體(箭頭143)亦可自經暴露表面134或經暴露傾斜表面134s流動。Counterflow 141, moving from central focal point 123 toward collector 120, may be primarily formed by DGL flow 138, along with heated gas (arrow HG) and streams ("curtain" streams) F1, F2, F3, and F4) from heated gas delivery device 136 (and optionally other streams not shown). Curved boundary line 141b, along with interior surface 156 of vessel 111 in the upper portion of the figure, represents an example boundary of counterflow 141. Heated gas (arrow 143) may also flow from exposed surface 134 or exposed inclined surface 134s.
考慮到源容器111內使用之低壓,排氣埠133之排氣開口155處的壓差並不大。但排氣開口155處藉由對排氣埠133抽真空而產生之較小壓差連同在兩個流140、141之合併區142處的導引流140與相對流141之間的流動動量平衡,其中合併區142靠近排氣開口155,可產生夾帶且含於導引流140中之目標材料副產物之穩定導引流進入排氣開口155,而目標材料副產物實質上不接觸源容器111的任何內部表面。Considering the low pressure used within the source container 111, the pressure differential at the exhaust opening 155 of the exhaust port 133 is not significant. However, the relatively small pressure differential at the exhaust opening 155, created by evacuating the exhaust port 133, combined with the flow momentum balance between the guide stream 140 and the counterstream 141 at the merging region 142 of the two streams 140, 141, where the merging region 142 is close to the exhaust opening 155, can produce a stable guide flow of the target material byproduct entrained and contained in the guide stream 140 into the exhaust opening 155, without the target material byproduct coming into contact with substantially any internal surface of the source container 111.
當使用錫或含錫目標115時,氫氣(諸如在圓錐體流CF中)與此等目標115之使用導致源容器111中之另一潛在污染源。當氫氣泡形成且在熔融錫中或在熔融錫條件下變大且隨後破裂時,此為熔融錫自容器中塗佈有熔融錫或經受用熔融錫塗佈之表面的噴出或「噴射」。When tin or tin-containing targets 115 are used, the use of hydrogen (such as in the cone flow CF) with such targets 115 results in another potential source of contamination in the source container 111. When hydrogen bubbles form and grow in or under the conditions of the molten tin and then collapse, this is the ejection or "spewing" of molten tin from the container onto the surface coated with or undergoing coating with the molten tin.
防止錫噴射之一種方式為防止熔融目標材料積聚於源容器110中之表面上,亦即藉由將表面保持在低於或充分低於目標材料之熔融點,對於錫而言,熔融點為約232℃。舉例而言,源容器111之內部表面156的一些部分可維持在低於232℃之溫度下,諸如50℃至110℃或50℃至100℃之範圍內的溫度下。沉積於此類表面上之任何錫保持呈固體形式且防止或抵抗噴射。One way to prevent tin splattering is to prevent the molten target material from accumulating on surfaces in the source container 110, namely by maintaining the surface below or substantially below the melting point of the target material, which for tin is approximately 232° C. For example, portions of the interior surface 156 of the source container 111 can be maintained at a temperature below 232° C., such as a temperature in the range of 50° C. to 110° C. or 50° C. to 100° C. Any tin deposited on such surfaces remains in solid form and prevents or resists splattering.
在減少噴射同時,使用「低溫」表面亦可降低溫度且增加容器111之內部體積114中之氣體的密度。內部體積114內之較高氣體密度增加EUV光之吸收,尤其對於自收集器120反射,穿過內部體積114之通常較冷「上部」區域(朝向圖1B的頁的頂部)之經反射EUV光124 (圖1A)。While reducing sparging, using a "cool" surface also reduces the temperature and increases the density of the gas in the inner volume 114 of the container 111. The higher gas density within the inner volume 114 increases the absorption of EUV light, especially for reflected EUV light 124 ( FIG. 1A ) that is reflected from the collector 120 and passes through the generally cooler "upper" region of the inner volume 114 (towards the top of the page in FIG. 1B ).
將由箭頭HG表示之加熱氣體自加熱氣體遞送裝置136之一或多個側且視情況自經暴露表面134、134s遞送至容器111之內部體積114中有助於提供較低密度氣體之區144 (由小短劃線邊界繪示),自收集器120行進至中間焦點123的大部分EUV光124可穿過該區。實務上,內部體積114中之加熱氣體與未加熱氣體之間通常不存在明確邊界;相反,可存在溫度梯度,其中更靠近加熱氣體遞送裝置及由箭頭HG表示之流的溫度較高。因此,圖1B中之小短劃線邊界表示相對較高溫度及較低密度氣體的實例區。區144中之較低密度氣體藉此降低對EUV光124之吸收,且此允許增加由EUV源110產生的EUV光(由EUV源110輸出之EUV光124)之亮度,從而提高EUV源110及下游器件(諸如微影裝置217) (圖2)的效能及操作經濟性。視需要,加熱氣體遞送裝置136亦可用於具有「熱」內部表面之容器內,以自加熱氣體遞送裝置136周圍區中之密度氣體獲得類似益處。加熱氣體遞送裝置136可包括高溫金屬(諸如鉬、鎢、錸)及其合金或由其形成。亦可使用具有相對良好導電性及可形成性之陶瓷材料,諸如例如氮化鋁。Delivering heated gas, represented by arrows HG, from one or more sides of heated gas delivery device 136 and, optionally, through exposed surfaces 134, 134s into the interior volume 114 of container 111 helps provide a region 144 of lower-density gas (depicted by a dashed-line boundary) through which the majority of EUV light 124 traveling from collector 120 to intermediate focus 123 can pass. In practice, there is typically no sharp boundary between heated and unheated gas in interior volume 114; rather, a temperature gradient may exist, with higher temperatures closer to the heated gas delivery device and the stream represented by arrows HG. Thus, the dashed-line boundary in FIG. 1B represents an example region of relatively higher temperature and lower-density gas. The lower density of the gas in region 144 thereby reduces absorption of EUV light 124, which allows for increased brightness of the EUV light generated by EUV source 110 (ie, EUV light 124 output by EUV source 110), thereby improving the performance and operating economy of EUV source 110 and downstream components, such as lithography apparatus 217 ( FIG. 2 ). Optionally, heated gas delivery device 136 can also be used within a container having a "hot" interior surface to achieve similar benefits from the higher density gas in the region surrounding heated gas delivery device 136. Heated gas delivery device 136 can include or be formed from high-temperature metals (such as molybdenum, tungsten, and arsenic) and their alloys. Ceramic materials with relatively good electrical conductivity and formability, such as aluminum nitride, can also be used.
圖3A為加熱氣體遞送裝置336之實施之透視圖,該加熱氣體遞送裝置可定位於圖1A或圖1B的EUV光源110中且用作加熱氣體遞送裝置136。加熱氣體遞送裝置336 (或遮蔽條頭330)在視圖中展示為對應於圖1B之加熱氣體遞送裝置136 (或遮蔽條頭130),但其z軸在圖3A之頁平面中向右。圖3B為加熱氣體遞送裝置336及遮蔽條頭330相對於圖3A繞z軸旋轉90度之透視圖,使得遮蔽條327作為整體可見,除頭330之外,亦包括軸桿329及底座328。軸桿329包括小平面352a及352c (及不可見之側上之對應小平面),使得軸桿329朝向正z軸方向及朝向負z軸方向逐漸變細或變窄。圖3C為圖3A及圖3B之加熱氣體遞送裝置336及遮蔽條327沿著圖3A中所展示之線3C-3C截取之橫截面視圖。FIG3A is a perspective view of an implementation of a heated gas delivery device 336 that can be positioned within the EUV light source 110 of FIG1A or FIG1B and used as heated gas delivery device 136. Heated gas delivery device 336 (or shield bar head 330) is shown in a view corresponding to heated gas delivery device 136 (or shield bar head 130) of FIG1B , but with its z-axis oriented to the right in the plane of the page of FIG3A . FIG3B is a perspective view of heated gas delivery device 336 and shield bar head 330 rotated 90 degrees about the z-axis relative to FIG3A , so that shield bar 327 is visible as a whole, including shaft 329 and base 328 in addition to head 330. Shaft 329 includes facets 352a and 352c (and corresponding facets on the side not visible) that gradually taper or narrow shaft 329 toward the positive z-axis and toward the negative z-axis. FIG3C is a cross-sectional view of heated gas delivery device 336 and shielding strip 327 of FIG3A and FIG3B taken along line 3C-3C shown in FIG3A.
如圖3A、圖3B及圖3C中所見,加熱氣體遞送裝置336 (其亦充當遮蔽條327之頭330)具有錐形形狀,在正z方向上或(在圖1A及圖1B中)在沿著光軸A朝向中間焦點123之方向上逐漸變細至尖端336t。側表面336s (錐形表面)中之出口336o可用以將加熱氣體遞送至光源容器之內部體積中,諸如圖1A及圖1B的光源110之容器111的內部體積114。出口336o可呈圓形或近似圓形孔形式,如所展示,但可採用其他形式,諸如狹縫及其他形狀。尖端336t可為封閉的,亦即,其可不具有出口。表面或「經暴露表面」334定位於加熱氣體遞送裝置336之負z軸極端上(或定位於圖1A及圖1B中暴露於主焦點122的一側上)。經暴露表面334可為或可包括傾斜表面334s,該傾斜表面意謂不垂直於(圖1A及圖1B之)軸A的表面。As seen in Figures 3A, 3B, and 3C, heated gas delivery device 336 (which also serves as head 330 of shielding strip 327) has a tapered shape that tapers to a tip 336t in the positive z-direction, or (in Figures 1A and 1B) along optical axis A toward intermediate focus 123. An outlet 336o in side surface 336s (the tapered surface) can be used to deliver heated gas to the interior volume of a light source container, such as interior volume 114 of container 111 of light source 110 in Figures 1A and 1B. Outlet 336o can be in the form of a circular or nearly circular hole, as shown, but other forms, such as a slit and other shapes, are possible. Tip 336t can be closed, that is, it may not have an outlet. Surface or "exposed surface" 334 is located at the negative z-axis end of heated gas delivery device 336 (or on the side exposed to primary focus 122 in Figures 1A and 1B). Exposed surface 334 may be or include a slanted surface 334s, meaning a surface that is not perpendicular to axis A (of Figures 1A and 1B).
如圖3B及圖3C中進一步所見,經暴露表面334可包括一或多個入口開口336io。當使用時,開口336io可由來自源雷射112 (圖1A、圖1B)之光束113e (圖1A及圖3C)輻射,且可允許光束113e之一部分光以內部輻射RADi (圖3C)的形式進入加熱氣體遞送裝置336之內部336i。內部輻射RADi輻照加熱氣體遞送裝置336之內部表面336is以加熱加熱氣體遞送裝置336且藉此加熱藉由或通過加熱氣體遞送裝置336遞送的氣體(諸如氫氣H 2),以產生加熱氣體HG。內部表面336is為錐形內部表面,以接收、吸收且部分地反射一或多次內部336i內之輻射RADi。在此實施中,經暴露表面334中之入口開口336io亦充當出氣口(圖3A至圖3C中未展示流出口),且在此實施中,可採用同心環出口348c及孔348h之形式(圖3B)。在此實施中,由內部輻射RADi照明之內部表面336is亦為氣體管道347之內部表面的遮蔽條頭部分,該氣體管道沿著軸桿329且在其內部延伸,且沿著加熱氣體遞送裝置336或頭330且在其內部延伸(圖3C)。 As further shown in Figures 3B and 3C, the exposed surface 334 may include one or more inlet openings 336io. When in use, the openings 336io can be irradiated by the light beam 113e (Figures 1A and 3C) from the source laser 112 (Figures 1A and 1B) and can allow a portion of the light beam 113e to enter the interior 336i of the heated gas delivery device 336 in the form of internal radiation RADi (Figure 3C). The internal radiation RADi irradiates the interior surface 336is of the heated gas delivery device 336 to heat the heated gas delivery device 336 and thereby heat the gas (e.g., hydrogen H2 ) delivered through or by the heated gas delivery device 336 to produce heated gas HG. Internal surface 336is is a tapered internal surface that receives, absorbs, and partially reflects one or more radiation RADi within interior 336i. In this embodiment, inlet opening 336io in exposed surface 334 also serves as a gas outlet (outlet not shown in Figures 3A-3C), and in this embodiment, may take the form of concentric annular outlets 348c and holes 348h (Figure 3B). In this embodiment, internal surface 336is illuminated by internal radiation RADi is also the shielded header portion of the internal surface of gas conduit 347, which extends along and within shaft 329 and along and within heated gas delivery device 336 or head 330 (Figure 3C).
如圖3C中所見,遮蔽條330之軸桿329可視情況包括沿著氣體管道347定位之電阻加熱元件RHE以向穿過之氣體添加熱。電阻加熱元件亦可或可替代地包括於加熱氣體遞送裝置336或頭330中。塗層或其他表面改質336isc可包括於內部表面336is或其一部分上以降低內部表面之反射率,使得內部輻射RADi之反射比由內部表面336is之未改質部分之反射少。在其中未經改質或未經塗佈內部表面之反射率大於0.9之情況下,塗層或其他表面改質336isc可適用於使反射率等於或低於例如0.9。加熱氣體遞送裝置336之內部336i的內部反射率等於或小於0.9及在加熱氣體遞送裝置336之內部336i的正z軸方向上之錐形形狀(有助於在內部336i內產生多重反射之形狀)兩者,均可有助於自內部輻射RADi捕捉能量以加熱加熱氣體遞送裝置336。As seen in FIG3C , the shaft 329 of the shielding strip 330 may optionally include a resistive heating element (RHE) positioned along the gas conduit 347 to add heat to the passing gas. The resistive heating element may also or alternatively be included in the heated gas delivery device 336 or head 330. A coating or other surface modification 336isc may be included on the interior surface 336is or a portion thereof to reduce the reflectivity of the interior surface so that the internal radiation RADi is reflected less than by the unmodified portion of the interior surface 336is. In cases where the reflectivity of the unmodified or uncoated interior surface is greater than 0.9, the coating or other surface modification 336isc may be applied to reduce the reflectivity to, for example, or less than, 0.9. Both the internal reflectivity of the interior 336i of the heated gas delivery device 336 being equal to or less than 0.9 and the tapered shape of the interior 336i in the positive z-axis direction of the heated gas delivery device 336 (a shape that helps generate multiple reflections within the interior 336i) can help capture energy from the internal radiation RADi to heat the heated gas delivery device 336.
圖4為類似於圖3C之橫截面視圖,其展示包括作為遮蔽條427之部分的加熱氣體遞送裝置436之另一實施,遮蔽條具有軸桿429、底座428及亦作為加熱氣體遞送裝置436的頭430。類似於圖3C且如圖4中所見,加熱氣體遞送裝置436具有錐形形狀,該錐形形狀在正z方向上,或(在圖1A及圖1B中)在沿著光軸A朝向中間焦點123之方向上逐漸變細至尖端436t (圖4)。側表面436s (錐形表面)中之出口436o可用以將加熱氣體遞送至光源容器之內部體積中,諸如圖1A及圖1B的光源110之容器111的內部體積114。尖端436t可為封閉的,亦即,其可不具有出口。表面或「經暴露表面」434定位於加熱氣體遞送裝置436之負z軸極端上(或定位於圖1A及圖1B中暴露於主焦點122的一側上)。經暴露表面434可為或可包括傾斜表面434s,該傾斜表面意謂不垂直於(圖1A及圖1B之)軸A的表面。FIG4 is a cross-sectional view similar to FIG3C showing another embodiment including a heated gas delivery device 436 as part of a masking strip 427 having a shaft 429, a base 428, and a head 430 also serving as the heated gas delivery device 436. Similar to FIG3C and as seen in FIG4 , the heated gas delivery device 436 has a tapered shape that tapers to a tip 436t ( FIG4 ) in the positive z-direction, or (in FIG1A and FIG1B ) in a direction along the optical axis A toward the intermediate focus 123. Outlets 436o in side surface 436s (tapered surface) can be used to deliver heated gas to the interior volume of a light source container, such as interior volume 114 of container 111 of light source 110 in Figures 1A and 1B. Tip 436t can be closed, that is, it can have no outlets. Surface or "exposed surface" 434 is located at the negative z-axis end of heated gas delivery device 436 (or on the side exposed to primary focus 122 in Figures 1A and 1B). Exposed surface 434 can be or include an inclined surface 434s, meaning a surface that is not perpendicular to axis A (of Figures 1A and 1B).
如圖4中進一步所見,經暴露表面434可包括一或多個入口開口436io,其中一個入口開口展示於圖4之橫截面中。當使用時,開口436io可由來自源雷射112 (圖1A、圖1B)之光束113e (圖1A及圖4)輻射,且可允許光束113e之一部分光以內部輻射RADi (圖4)的形式進入加熱氣體遞送裝置436之內部436i中。內部輻射RADi輻照加熱氣體遞送裝置436之內部表面436is以加熱加熱氣體遞送裝置436且藉此加熱藉由或通過加熱氣體遞送裝置436遞送的氣體以產生加熱氣體HG。在此實施中,經暴露表面434中之一或多個入口開口436io並未亦充當出氣口。若不需要來自經暴露表面434之氣流(在圖4之經暴露表面434的下端處由氣體子管道447o之封閉端CE表示的替代方案),或若需要來自經暴露表面434之氣流但使用擋板BF來顯著限制或防止來自光束113e之輻射到達氣體管道或子管道447p (在圖4之經暴露表面434的上端處表示的替代方案),則此實施可為有用的。As further shown in FIG4 , the exposed surface 434 may include one or more inlet openings 436 io, one of which is shown in cross-section in FIG4 . When in use, the openings 436 io can be irradiated by the light beam 113 e ( FIG1A and FIG4 ) from the source laser 112 ( FIG1A , FIG1B ) and can allow a portion of the light beam 113 e to enter the interior 436 i of the heated gas delivery device 436 in the form of internal radiation RADi ( FIG4 ). The internal radiation RADi irradiates the interior surface 436 i of the heated gas delivery device 436 to heat the heated gas delivery device 436 and thereby heat the gas delivered by or through the heated gas delivery device 436 to produce heated gas HG. In this embodiment, one or more inlet openings 43610 in the exposed surface 434 do not also serve as gas outlets. This embodiment may be useful if gas flow from the exposed surface 434 is not desired (the alternative represented by the closed end CE of the gas sub-duct 447o at the lower end of the exposed surface 434 in FIG4 ), or if gas flow from the exposed surface 434 is desired but a baffle BF is used to significantly limit or prevent radiation from the beam 113e from reaching the gas duct or sub-duct 447p (the alternative represented at the upper end of the exposed surface 434 in FIG4 ).
在此實施中,光束113e可通過一或多個相關聯入口開口436io進入一或多個內部區(諸如內部區436i),該等入口開口436io允許光束113e之一些光進入一或多個內部區436i,產生內部輻射RADi。如所指出,一或多個內部區436i不為加熱氣體遞送裝置436或頭430內之氣體管道之部分。實情為,一或多個氣體子管道447o、447p由定位於軸桿427內且沿著軸桿427之氣體管道447進料。氣體子管道447o、447p可為沿著外部表面436s內部延伸之單個環形管道之相對側,或可由一或多個環或半環進料通道流體連接,諸如由定位於在管道447處或其附近的加熱氣體遞送裝置436或頭430 (未展示)內之單環或半環進料通道流體連接。In this embodiment, the light beam 113e can enter one or more internal regions (such as internal region 436i) through one or more associated inlet openings 436i. These inlet openings 436i allow some light from the light beam 113e to enter the one or more internal regions 436i, generating internal radiation RADi. As noted, the one or more internal regions 436i are not part of the heated gas delivery device 436 or the gas conduit within the head 430. Instead, one or more gas sub-conduits 447o, 447p are fed by a gas conduit 447 positioned within and along the shaft 427. The gas sub-ducts 447o, 447p can be opposite sides of a single annular duct extending along the interior of the outer surface 436s, or can be connected by one or more annular or semi-annular feed channel fluids, such as a single annular or semi-annular feed channel fluid connection positioned at or near the duct 447 or the heated gas delivery device 436 or the head 430 (not shown).
內部輻射RADi以內部區436i之內部表面436is形式照明加熱氣體遞送裝置436之內部表面,使得加熱加熱氣體遞送裝置436,藉此加熱由或通過加熱氣體遞送裝置436遞送的氣體以產生加熱氣體HG。塗層或其他表面改質436isc可包括於內部表面436is或其部分上以降低內部表面之反射率,使得內部輻射RADi將比內部表面436is之未改質部分地反射得更少。在其中未改質或未塗佈內部表面之反射率大於0.9之情況下,塗層或其他表面改質436isc可用於例如使反射率等於或低於0.9。加熱氣體遞送裝置436之內部區436i的內部反射率等於或小於0.9及在加熱氣體遞送裝置436之內部區436i的正z軸方向上之錐形形狀(有助於在內部區436i內產生多重反射之形狀)兩者,均可有助於自內部輻射RADi捕捉能量以加熱加熱氣體遞送裝置436。Internal radiation RADi illuminates the interior surface of heated gas delivery device 436 in the form of interior surface 436is of interior region 436i, heating heated gas delivery device 436, thereby heating the gas delivered by or through heated gas delivery device 436 to produce heated gas HG. A coating or other surface modification 436isc may be included on interior surface 436is or a portion thereof to reduce the reflectivity of the interior surface so that internal radiation RADi will be less reflected than the unmodified portion of interior surface 436is. In cases where the reflectivity of the unmodified or uncoated interior surface is greater than 0.9, coating or other surface modification 436isc may be used, for example, to reduce the reflectivity to or below 0.9. The internal reflectivity of the inner region 436i of the heated gas delivery device 436 being equal to or less than 0.9 and the tapered shape of the inner region 436i in the positive z-axis direction of the heated gas delivery device 436 (a shape that helps to generate multiple reflections within the inner region 436i) can both help to capture energy from the internal radiation RADi to heat the heated gas delivery device 436.
圖5為包括收集器520 (諸如圖1A及圖1B之收集器120)及加熱氣體遞送裝置536 (諸如圖1A及圖1B之加熱氣體遞送裝置136、圖3A至圖3C的336及圖4之436)的橫截面視圖。本文所揭示之氣體加熱氣體遞送裝置及程序的一些有益態樣可部分參考圖5進行解釋。FIG5 is a cross-sectional view of a gas collector 520 (e.g., collector 120 of FIG1A and FIG1B ) and a heated gas delivery device 536 (e.g., heated gas delivery device 136 of FIG1A and FIG1B , 336 of FIG3A through FIG3C , and 436 of FIG4 ). Advantageous aspects of the gas heated gas delivery device and process disclosed herein may be explained in part with reference to FIG5 .
收集器520或收集器表面521之外周及內周界定自收集器520之主焦點522處或附近的電漿518經反射於收集器表面521中之經反射EUV光524的外邊緣或邊緣射線。自收集器520反射之EUV光524基本上均限制於第一圓錐體內,該第一圓錐體界定為以收集器520之外邊緣或收集器反射表面521作為其底座且以中間焦點523作為其頂點。此第一圓錐體可稱為第一近似圓錐體或可視為第一稍微截頭圓錐體,此係因為中間焦點有效地覆蓋一些區域且因此不為單點。在圖5中,第一近似圓錐體在橫截面中由具有頂點A1、B、C之三角形表示。類似地,自收集器520反射之EUV光524基本上均限制於第二圓錐體或第二近似圓錐體或第二截頭圓錐體外部。第二近似圓錐體界定為以穿孔525或收集器反射表面521之內邊緣之周邊作為其底座且以中間焦點523作為其頂點。在圖5中,第二近似圓錐體在橫截面中由具有頂點A1、D、E之三角形表示。第二近似圓錐體對應於沿著圖1A之光學軸A的「陰影或大間隙154」。The outer and inner peripheries of the collector 520 or collector surface 521 define the outer edges or edge rays of reflected EUV light 524 reflected from the plasma 518 at or near the principal focus 522 of the collector 520 into the collector surface 521. The EUV light 524 reflected from the collector 520 is substantially confined within a first cone defined by the outer edge of the collector 520 or the collector reflective surface 521 as its base and the central focus 523 as its apex. This first cone can be referred to as a first approximate cone or a first slightly truncated cone because the central focus effectively covers some area and is therefore not a single point. In FIG5 , the first approximate cone is represented in cross-section by a triangle with vertices A1, B, and C. Similarly, EUV light 524 reflected from collector 520 is substantially confined to the exterior of a second cone, or a second approximate cone, or a second truncated cone. The second approximate cone is defined by the perimeter of the inner edge of through-hole 525 or collector reflective surface 521 as its base and the central focus 523 as its apex. In FIG5 , the second approximate cone is represented in cross-section by a triangle with vertices A1, D, and E. The second approximate cone corresponds to the "shadow or large gap 154" along optical axis A of FIG1A .
雖然來自收集器520之經反射EUV光524基本上均限制在那裏,但該經反射EUV光之強度並未均勻地分佈於第一圓錐體與第二圓錐體之間的體積內。為了繪示此點,如圖5中所表示,由BFG及DFG給出之角係相等的且因此基本上平等地分割離開主焦點522朝向圖5之平面中的收集器520之左側的EUV光524。然而,如所展示,與在角DFG內行進之輻射相比,在角BFG內行進之輻射跨收集器520的表面521更大地擴散。因此,在收集器520中反射後,來自收集器520之標稱約二分之一輻射(EUV光524)在圖5中之灰色突出顯示區內行進,且二分之一輻射在灰色突出顯示區外行進。因此,灰色突出顯示區為集中區CR,其中EUV光524比集中區CR徑向外之EUV光524更集中。Although the reflected EUV light 524 from the collector 520 is substantially confined there, the intensity of the reflected EUV light is not uniformly distributed within the volume between the first and second cones. To illustrate this, as shown in FIG5 , the angles given by the BFG and DFG are equal and therefore substantially equally split the EUV light 524 that leaves the primary focus 522 toward the left side of the collector 520 in the plane of FIG5 . However, as shown, radiation traveling within the angle BFG is more diffuse across the surface 521 of the collector 520 than radiation traveling within the angle DFG. Thus, after reflection in the collector 520, nominally about one-half of the radiation (EUV light 524) from the collector 520 travels within the gray highlighted area in Figure 5, and one-half of the radiation travels outside the gray highlighted area. Thus, the gray highlighted area is the concentration region CR, where the EUV light 524 is more concentrated than the EUV light 524 outward from the concentration region CR.
此集中效應往往會因收集器520之表面521的特性而增強。以較低入射角(更接近垂直於表面521,如在集中區CR內)反射之EUV光524往往比以較高入射角(如在集中區CR外)反射的EUV光524反射得更完全(以較高反射率)。因此,自收集器520行進至中間焦點523的超過二分之一的光通常在相對徑向狹窄集中區CR內行進。藉由將加熱氣體HG直接引入至集中區CR中(且自此處進入周圍區中)且因此減少在集中區CR中尤其嚴重的氣體吸收損失,可使給定EUV光源110之亮度諸如增加1%、2%、3%或4%或更多。為了將加熱氣體直接遞送至集中區CR而不撞擊區CR且因此干擾EUV光524之傳輸,加熱氣體遞送裝置536之外部表面可為圓錐形的且可與第二近似圓錐體間隔開,當加熱氣體遞送裝置536處於操作溫度時,使得加熱氣體遞送裝置536之外部表面在操作時不會侵佔第二近似圓錐體。加熱氣體遞送裝置536 (及加熱氣體遞送裝置336及436)之操作溫度可在例如400℃至2000℃、或400℃至1200℃、或400℃至800℃之範圍內。加熱氣體遞送裝置可沿著軸線A延伸在90公分(cm)至110 cm、或95 cm至105 cm之範圍內的距離。替代地或另外,加熱氣體遞送裝置可在沿著軸A自主焦點522至中間焦點523之距離的50%至70%、或55%至65%之範圍內延伸。加熱氣體遞送裝置536之尖端可自中間焦點523延伸10 cm至25 cm、或10 cm至20 cm、或10 cm至15 cm內。This concentrating effect is often enhanced by the properties of the surface 521 of the collector 520. EUV light 524 reflected at lower angles of incidence (closer to normal to the surface 521, such as within the concentrating region CR) tends to be reflected more completely (with a higher reflectivity) than EUV light 524 reflected at higher angles of incidence (such as outside the concentrating region CR). Consequently, more than half of the light traveling from the collector 520 to the intermediate focus 523 typically travels within the relatively radially narrow concentrating region CR. By introducing the heated gas HG directly into the concentrating region CR (and from there into the surrounding area) and thereby reducing gas absorption losses, which are particularly severe in the concentrating region CR, the brightness of a given EUV light source 110 can be increased by, for example, 1%, 2%, 3%, or 4% or more. To deliver the heated gas directly to the concentrated region CR without impinging on the region CR and thereby interfering with the transmission of the EUV light 524, the outer surface of the heated gas delivery device 536 can be conical and can be spaced apart from the second approximate cone when the heated gas delivery device 536 is at an operating temperature so that the outer surface of the heated gas delivery device 536 does not encroach on the second approximate cone during operation. The operating temperature of the heated gas delivery device 536 (and heated gas delivery devices 336 and 436) can be, for example, in the range of 400° C. to 2000° C., or 400° C. to 1200° C., or 400° C. to 800° C. The heated gas delivery device can extend a distance along axis A within a range of 90 centimeters (cm) to 110 cm, or 95 cm to 105 cm. Alternatively or additionally, the heated gas delivery device can extend within a range of 50% to 70%, or 55% to 65%, of the distance from the main focal point 522 to the intermediate focal point 523 along axis A. The tip of the heated gas delivery device 536 can extend within 10 cm to 25 cm, or 10 cm to 20 cm, or 10 cm to 15 cm from the intermediate focal point 523.
圖6為根據本揭示之用於操作EUV光源(諸如EUV光源110)之程序P600的流程圖。如圖6中所見,程序P600包括:在EUV光源110 (圖1A、圖1B)之內部體積114 (圖1A、圖1B)內,用來自源雷射(圖1A之112)的光(諸如圖1A之光束113)輻照目標(諸如圖1A之目標115),以產生發射EUV之電漿(圖1A、圖1B之118;圖5之518) (S10);自收集器(圖1A、圖1B之120;圖5之520)沿著內部體積(圖1A、圖1B之114)內之經反射EUV光的路徑反射來自電漿(圖1A、圖1B之118;圖5之518)的EUV光(圖1A、圖1B之124;圖5之524) (S20);將來自源雷射(圖1A之112)之光(諸如圖1A之光束113)接收至加熱氣體遞送裝置(圖1A、圖1B之136;圖3A至圖3C之336;圖4之436;圖5之536)中,以加熱加熱氣體遞送裝置(圖1A、圖1B之136;圖3A至圖3C之336;圖4之436;圖5之536) (S30);及沿著經反射EUV光(圖1A、圖1B之124;圖5之524)路徑將加熱氣體(圖1A、圖1B、圖3C、圖4及圖5之HG)自加熱氣體遞送裝置(圖1A、圖1B之136;圖3A至圖3C之336;圖4之436;圖5之536)遞送至內部體積(圖1A、圖1B之114)中。FIG6 is a flow chart of process P600 for operating an EUV light source (e.g., EUV light source 110) according to the present disclosure. As shown in FIG6, process P600 includes irradiating a target (e.g., target 115 in FIG1A) with light (e.g., beam 113 in FIG1A) from a source laser (e.g., 112 in FIG1A) within an interior volume 114 (FIGS. 1A, 1B) of the EUV light source 110 (FIGS. 1A, 1B) to generate an EUV-emitting plasma (e.g., 118 in FIG1A, 1B; 518 in FIG5). (S10); EUV light (124 in FIG. 1A and FIG. 1B; 524 in FIG. 5) is reflected from the collector (120 in FIG. 1A and FIG. 1B; 520 in FIG. 5) along the path of the reflected EUV light within the inner volume (114 in FIG. 1A and FIG. 1B) (S20); receiving light (such as light beam 113 in FIG. 1A ) from the source laser ( 112 in FIG. 1A ) into the heated gas delivery device ( 136 in FIG. 1A and FIG. 1B ; 336 in FIG. 3A to FIG. 3C ; 436 in FIG. 4 ; 536 in FIG. 5 ), thereby heating the heated gas delivery device ( 136 in FIG. 1A and FIG. 1B ; 336 in FIG. 3A to FIG. 3C ; 436 in FIG. 4 ; 536 in FIG. 5 ). (S30); and delivering the heated gas (HG in Figures 1A, 1B, 3C, 4, and 5) from the heated gas delivery device (136 in Figures 1A and 1B; 336 in Figures 3A to 3C; 436 in Figure 4; 536 in Figure 5) to the inner volume (114 in Figures 1A and 1B) along the path of the reflected EUV light (124 in Figures 1A and 1B; 524 in Figure 5).
實施可進一步描述於以下經編號條項中: 1. 一種用於產生極紫外線(EUV)輻射之系統,該系統包括:源容器,其具有內部體積;源雷射,其經組態以產生在沿著光軸之進入光方向上進入該內部體積之光,以向目標提供能量以在該內部體積內引起該EUV產生;及加熱氣體遞送裝置,其安置於該內部體積內且經組態以將加熱氣體遞送至該內部體積中,該加熱氣體遞送裝置定位於該光軸上且沿著該光軸延伸,該加熱氣體遞送裝置具有用以將該加熱氣體分配至該內部體積中之出口及用以自該源雷射接收光以加熱該加熱氣體遞送裝置的一或多個入口開口。 2. 如條項1之系統,其中該加熱氣體遞送裝置進一步包括內部表面,該內部表面之對於該光之一反射率等於或小於0.9,以吸收通過該一或多個入口開口自該源雷射接收的該光中之至少一些。 3. 如條項1之系統,其中該加熱氣體遞送裝置進一步包括錐形內部表面,該錐形內部表面用以接收、部分地反射一或多次及至少部分地吸收通過該一或多個入口開口自該源雷射接收到之該光。 4. 如條項3之系統,其中該錐形內部表面包括圓錐形內部表面。 5.如條項1之系統,其進一步包括加熱氣體源,該加熱氣體源連接至該加熱氣體遞送裝置以將加熱氣體遞送至該加熱氣體遞送裝置。 6. 如條項5之系統,其中該加熱氣體源定位於該內部體積外部。 7. 如條項1之系統,其中該加熱氣體遞送裝置進一步包括連接至該等出口之氣體管道。 8. 如條項1之系統,其中該加熱氣體遞送裝置進一步包括加熱元件,該加熱元件經組態以加熱該加熱氣體遞送裝置及/或由該加熱氣體遞送裝置遞送之氣體。 9. 如條項1之系統,其進一步包括收集器,該收集器經組態以將在該收集器之主焦點處或其附近產生之EUV光反射至該收集器之中間焦點,該收集器具有與該光軸基本上重合的光學軸及沿著該光學軸之穿孔,該穿孔經組態以允許該光進入該內部體積,使得自收集器反射之大多數或所有EUV光在具有收集器之周邊作為底座且具有中間焦點作為頂點之第一近似圓錐體之體積內部,且在具有穿孔作為底座且具有中間焦點作為頂點之第二近似圓錐體的體積外部自該收集器行進至該中間焦點,且其中該加熱氣體遞送裝置沿著該光軸安置於該第二近似圓錐體內。 10. 如條項9之系統,其中該加熱氣體遞送裝置具有圓錐形外部表面,當該加熱氣體遞送裝置處於操作溫度時,該圓錐形外部表面與該第二近似圓錐體之表面間隔開,使得該外部表面在操作時不會撞擊該第二近似圓錐體。 11. 如條項9之系統,其中加熱氣體遞送裝置沿著光軸延伸在90至110公分之範圍內之距離。 12. 如條項9之系統,其中該加熱氣體遞送裝置沿著光軸延伸在沿著該光軸自主焦點至中間焦點之距離的50%至70%之範圍內之距離。 13. 如條項1之系統,其中該加熱氣體遞送裝置之該等出口中之至少一些定位於加熱氣體遞送裝置之圓錐形外部表面中,該圓錐形外部表面在沿著該光軸之方向上變窄且延伸遠離該進入光方向。 14. 如條項13之系統,其中該加熱氣體遞送裝置沿著光軸延伸在90至110公分之範圍內之距離。 15. 如條項13之系統,其中加熱氣體遞送裝置沿著光軸延伸在沿著光軸自主焦點至中間焦點之距離的50%至70%之範圍內之距離。 16. 如條項13之系統,其中加熱氣體遞送裝置之尖端延伸至距收集器之中間焦點10公分至15公分內。 17. 一種用於提供極紫外線(EUV)輻射之程序,該程序包括:在源容器之內部體積內,用來自源雷射之光輻照目標以產生產生EUV的電漿;藉由沿著經反射EUV路徑反射來自電漿之EUV光而在內部體積內產生經反射EUV光;將來自源雷射之光接收至加熱氣體遞送裝置中以加熱該加熱氣體遞送裝置;及沿著經反射EUV路徑將來自加熱氣體遞送裝置之加熱氣體遞送至源容器之內部體積中。 18. 如條項17之程序,其中該加熱氣體遞送裝置之一側包括出口。 19. 如條項18之程序,其中該加熱氣體遞送裝置包括在朝向收集器之中間焦點的方向上變窄之圓錐形形狀。 20. 如條項19之程序,其中該加熱氣體遞送裝置在平行於源雷射之光軸的方向上延伸90公分至110公分之範圍內之距離。 21. 如條項19之程序,其中該加熱氣體遞送裝置在平行於源雷射之光軸的方向上延伸自收集器之主焦點至中間焦點之距離的50%至70%。 The implementation may be further described in the following numbered clauses: 1. A system for generating extreme ultraviolet (EUV) radiation includes: a source container having an inner volume; a source laser configured to generate light that enters the inner volume in an incoming light direction along an optical axis to provide energy to a target to induce EUV generation within the inner volume; and a heated gas delivery device disposed within the inner volume and configured to deliver heated gas into the inner volume, the heated gas delivery device being positioned on and extending along the optical axis, the heated gas delivery device having an outlet for distributing the heated gas into the inner volume and one or more inlet openings for receiving light from the source laser to heat the heated gas delivery device. 2. The system of clause 1, wherein the heated gas delivery device further comprises an inner surface having a reflectivity with respect to the light equal to or less than 0.9 to absorb at least some of the light received from the source laser through the one or more inlet openings. 3. The system of clause 1, wherein the heated gas delivery device further comprises a tapered inner surface to receive, partially reflect one or more times, and at least partially absorb the light received from the source laser through the one or more inlet openings. 4. The system of clause 3, wherein the tapered inner surface comprises a circular tapered inner surface. 5. The system of clause 1, further comprising a heated gas source connected to the heated gas delivery device to deliver heated gas to the heated gas delivery device. 6. The system of clause 5, wherein the heated gas source is located outside the internal volume. 7. The system of clause 1, wherein the heated gas delivery device further comprises a gas conduit connected to the outlets. 8. The system of clause 1, wherein the heated gas delivery device further comprises a heating element configured to heat the heated gas delivery device and/or the gas delivered by the heated gas delivery device. 9. The system of clause 1, further comprising a collector configured to reflect EUV light generated at or near a principal focus of the collector to a central focus of the collector, the collector having an optical axis substantially coincident with the optical axis and a perforation along the optical axis, the perforation configured to allow the light to enter the interior volume such that most or all EUV light reflected from the collector travels from the collector to the central focus inside a first approximately pyramidal volume having the periphery of the collector as a base and the central focus as an apex, and outside a second approximately pyramidal volume having the perforation as a base and the central focus as an apex, and wherein the heated gas delivery device is disposed within the second approximately pyramidal volume along the optical axis. 10. The system of clause 9, wherein the heated gas delivery device has a conical outer surface that is spaced apart from the surface of the second approximately conical body when the heated gas delivery device is at operating temperature such that the outer surface does not impinge on the second approximately conical body during operation. 11. The system of clause 9, wherein the heated gas delivery device extends a distance along the optical axis in the range of 90 to 110 centimeters. 12. The system of clause 9, wherein the heated gas delivery device extends a distance along the optical axis in the range of 50% to 70% of the distance from the main focal point to the intermediate focal point along the optical axis. 13. The system of clause 1, wherein at least some of the outlets of the heated gas delivery device are positioned in a conical outer surface of the heated gas delivery device, the conical outer surface narrowing in a direction along the optical axis and extending away from the direction of the incoming light. 14. The system of clause 13, wherein the heated gas delivery device extends a distance along the optical axis in the range of 90 to 110 centimeters. 15. The system of clause 13, wherein the heated gas delivery device extends a distance along the optical axis in the range of 50% to 70% of the distance along the optical axis from the main focal point to the intermediate focal point. 16. The system of clause 13, wherein the tip of the heated gas delivery device extends to within 10 cm to 15 cm of the central focus of the collector. 17. A process for providing extreme ultraviolet (EUV) radiation, the process comprising: irradiating a target with light from a source laser within an interior volume of a source container to generate an EUV-generating plasma; generating reflected EUV light within the interior volume by reflecting the EUV light from the plasma along a reflected EUV path; receiving the light from the source laser into the heated gas delivery device to heat the heated gas delivery device; and delivering heated gas from the heated gas delivery device along the reflected EUV path into the interior volume of the source container. 18. The process of clause 17, wherein one side of the heated gas delivery device includes an outlet. 19. The process of clause 18, wherein the heated gas delivery device comprises a conical shape that narrows in a direction toward the central focus of the collector. 20. The process of clause 19, wherein the heated gas delivery device extends a distance in the range of 90 cm to 110 cm in a direction parallel to the optical axis of the source laser. 21. The process of clause 19, wherein the heated gas delivery device extends 50% to 70% of the distance from the primary focus to the central focus of the collector in a direction parallel to the optical axis of the source laser.
上文所描述之實施及其他實施均在以下申請專利範圍之範疇內。The implementations described above and other implementations are within the scope of the following patent applications.
3C-3C:線 110:EUV光源 111:源容器 112:源雷射 113:光束 113e:光束 114:內部體積 115:目標 115s:目標護罩 116:輻照位點 117a:目標遞送系統 117b:目標截留器 118:電漿 119:EUV光 120:收集器 121:反射表面 122:主焦點 123:中間焦點 124:重定向EUV光 125:穿孔 126:聚焦單元 127:遮蔽條 128:底座 129:軸桿 130:頭 131:氣體供應通道 131a:氣體源 131h:加熱器 132:氫氣氣體 133:排氣埠 134:表面 134s:傾斜表面 135:部分 136:加熱氣體遞送裝置 137:噴嘴 138:DGL流 139:傘狀流 140:含碎片導引流 141:相對流 141b:邊界線 142:合併區 143:箭頭 144:區 150:度量衡器件 154:大間隙 155:排氣開口 156:內部表面 210:EUV光源 224:EUV光 271:微影曝光裝置 272:照明鏡面 273:倍縮光罩 274:減光鏡 275:晶圓 323:中間焦點 327:遮蔽條 328:底座 329:軸桿 330:頭 334:經暴露表面 334s:傾斜表面 336:加熱氣體遞送裝置 336i:內部 336io:入口開口 336is:內部表面 336isc:表面改質 336o:出口 336s:側表面 336t:尖端 347:氣體管道 348c:同心環出口 348h:孔 352a:小平面 352c:小平面 427:遮蔽條 428:底座 429:軸桿 430:頭 434:經暴露表面 434s:傾斜表面 436:加熱氣體遞送裝置 436i:內部 436io:入口開口 436is:內部表面 436isc:表面改質 436o:出口 436s:側表面 436t:尖端 447:氣體管道 447o:氣體子管道 447p:氣體子管道 518:電漿 520:收集器 521:收集器表面 522:主焦點 523:中間焦點 524:經反射EUV光 525:穿孔 536:加熱氣體遞送裝置 A:光軸 A1:頂點 B:頂點 BF:擋板 C:頂點 CE:封閉端 CF:圓錐體流 CR:集中區 D:頂點 E:頂點 F1:氣流 F2:氣流 F3:氣流 F4:氣流 HG:加熱氣體/箭頭 P600:程序 RADi:內部輻射 RHE:電阻加熱元件 S1:蓮蓬頭流 S2:蓮蓬頭流 S10:步驟 S20:步驟 S30:步驟 S40:步驟 x:軸 y:軸 z:軸 3C-3C: Line 110: EUV light source 111: Source container 112: Source laser 113: Beam 113e: Beam 114: Internal volume 115: Target 115s: Target shield 116: Irradiation site 117a: Target delivery system 117b: Target interceptor 118: Plasma 119: EUV light 120: Collector 121: Reflective surface 122: Prime focus 123: Intermediate focus 124: Redirected EUV light 125: Perforation 126: Focusing unit 127: Shielding strip 128: Base 129: Shaft 130: Head 131: Gas supply channel 131a: Gas source 131h: Heater 132: Hydrogen gas 133: Exhaust port 134: Surface 134s: Inclined surface 135: Section 136: Heated gas delivery device 137: Nozzle 138: DGL flow 139: Umbrella flow 140: Debris-carrying guide flow 141: Counterflow 141b: Boundary line 142: Merging area 143: Arrow 144: Area 150: Metrology device 154: Large gap 155: Exhaust opening 156: Internal surface 210: EUV light source 224: EUV light 271: Lithography exposure device 272: Illumination mirror 273: Reduction mask 274: Density filter 275: Wafer 323: Intermediate focus 327: Masking strip 328: Base 329: Shaft 330: Head 334: Exposed surface 334s: Inclined surface 336: Heated gas delivery device 336i: Interior 336io: Inlet opening 336is: Interior surface 336isc: Surface modification 336o: Outlet 336s: Side surface 336t: Tip 347: Gas duct 348c: Concentric ring outlet 348h: Hole 352a: Facet 352c: Facet 427: Masking strip 428: Base 429: Shaft 430: Head 434: Exposed surface 434s: Inclined surface 436: Heated gas delivery device 436i: Interior 436io: Inlet opening 436is: Interior surface 436isc: Surface modification 436o: Outlet 436s: Side surface 436t: Tip 447: Gas duct 447o: Gas sub-duct 447p: Gas sub-duct 518: Plasma 520: Collector 521: Collector surface 522: Primary focus 523: Intermediate focus 524: Reflected EUV light 525: Perforation 536: Heating Gas Delivery Device A: Optical Axis A1: Apex B: Apex BF: Baffle C: Apex CE: Closed End CF: Conical Flow CR: Concentrated Area D: Apex E: Apex F1: Airflow F2: Airflow F3: Airflow F4: Airflow HG: Heating Gas/Arrow P600: Program RADi: Internal Radiation RHE: Resistive Heating Element S1: Shower Head Flow S2: Shower Head Flow S10: Step S20: Step S30: Step S40: Step x: Axis y: Axis z: Axis
圖1A為極紫外線(EUV)光源之態樣之橫截面示意圖。FIG1A is a schematic cross-sectional view of an extreme ultraviolet (EUV) light source.
圖1B為圖1A之EUV光源之橫截面示意圖,該EUV光源繞z軸旋轉90度且旋轉使得重力在頁平面中向下表示。1B is a schematic cross-sectional view of the EUV light source of FIG. 1A , rotated 90 degrees about the z-axis and rotated so that gravity is directed downward in the plane of the page.
圖2為與微影曝光裝置一起使用之EUV源之方塊圖。FIG2 is a block diagram of an EUV source used with a lithography exposure apparatus.
圖3A為可定位於圖1A或圖1B之EUV光源中之加熱氣體遞送裝置的實施之透視圖。3A is a perspective view of an implementation of a heated gas delivery device that may be positioned in the EUV light source of FIG. 1A or FIG. 1B .
圖3B為圖3A之加熱氣體遞送裝置相對於圖3A之視圖繞z軸旋轉90度的透視圖。FIG3B is a perspective view of the heated gas delivery device of FIG3A rotated 90 degrees about the z-axis relative to the view of FIG3A.
圖3C為展示為沿著圖3A之線3C-3C截取之圖3B的加熱氣體遞送裝置的橫截面視圖。FIG3C is a cross-sectional view of the heated gas delivery device of FIG3B taken along line 3C-3C of FIG3A.
圖4為加熱氣體遞送裝置的另一實施之類似於圖3C的橫截面視圖。FIG4 is a cross-sectional view similar to FIG3C of another embodiment of a heated gas delivery device.
圖5為收集器及加熱氣體遞送裝置的橫截面示意圖。Figure 5 is a schematic cross-sectional view of the collector and heated gas delivery device.
圖6為用於操作包括諸如圖1A、圖1B、圖3A、圖3B、圖4、圖5或圖6中之加熱氣體遞送裝置的光源之程序之流程圖。6 is a flow chart of a process for operating a light source including the heated gas delivery device of FIG. 1A , FIG. 1B , FIG. 3A , FIG. 3B , FIG. 4 , FIG. 5 , or FIG. 6 .
3C-3C:線 3C-3C: Line
330:頭 330: Head
334:經暴露表面 334: Exposed surface
334s:傾斜表面 334s: Inclined surface
336:加熱氣體遞送裝置 336: Heating gas delivery device
336o:出口 336o: Exit
336s:側表面 336s: Side surface
336t:尖端 336t: Cutting-edge
y:軸 y: axis
z:軸 z:axis
Claims (20)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202363514455P | 2023-07-19 | 2023-07-19 | |
| US63/514,455 | 2023-07-19 |
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| TW202527603A true TW202527603A (en) | 2025-07-01 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW113124468A TW202527603A (en) | 2023-07-19 | 2024-07-01 | Euv source vessel heated gas delivery apparatus and method |
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| TW (1) | TW202527603A (en) |
| WO (1) | WO2025016632A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI402628B (en) * | 2007-08-31 | 2013-07-21 | Cymer Inc | System managing gas flow between chambers of an extreme ultraviolet (euv) photolithography apparatus |
| JP2013522866A (en) * | 2010-03-12 | 2013-06-13 | エーエスエムエル ネザーランズ ビー.ブイ. | Radiation source, lithographic apparatus and device manufacturing method |
| JP6869242B2 (en) * | 2015-11-19 | 2021-05-12 | エーエスエムエル ネザーランズ ビー.ブイ. | EUV source chambers and gas flow modes for lithographic equipment, multi-layer mirrors, and lithographic equipment |
| JP7193459B2 (en) * | 2017-01-06 | 2022-12-20 | エーエスエムエル ネザーランズ ビー.ブイ. | Extreme ultraviolet source (EUV source) |
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- 2024-06-13 WO PCT/EP2024/066490 patent/WO2025016632A1/en active Pending
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