TW202509703A - System-on-chip including voltage droop detection circuit and operating method thereof - Google Patents
System-on-chip including voltage droop detection circuit and operating method thereof Download PDFInfo
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[相關申請案的交叉參考][Cross reference to related applications]
本申請案主張2023年4月20日於韓國智慧財產局提出申請的韓國專利申請案第10-2023-0052213號及2023年7月19日於韓國智慧財產局提出申請的韓國專利申請案第10-2023-0094020號的優先權,上述韓國專利申請案的揭露內容全部併入本案供參考。This application claims priority to Korean Patent Application No. 10-2023-0052213 filed on April 20, 2023, in the Korean Intellectual Property Office, and Korean Patent Application No. 10-2023-0094020 filed on July 19, 2023, in the Korean Intellectual Property Office. The disclosures of the above Korean patent applications are incorporated herein by reference in their entirety.
本發明概念的實施例是有關於一種半導體電路,且更具體而言,是有關於一種包括電壓下降檢測電路的系統晶片及其操作方法。Embodiments of the inventive concept relate to a semiconductor circuit, and more particularly, to a system chip including a voltage drop detection circuit and an operating method thereof.
系統晶片(system-on-chip,SoC)中所包括的高效能功能電路(或半導體電路)的供應電壓根據操作環境及所實行的工作的水準而波動。通常,為了防備電壓明顯降低的下降現象,使用在供應電壓上設定防護頻帶以使所述供應電壓具有較在正常狀態中所利用的值大的值的方法。防護頻帶是指在考量到下降的情況下對供應電壓在正常狀態中的值額外增加的一個值。然而,SoC的電力消耗會由於高防護頻帶的設定而增大,且因此產品的效率可能會降低。The supply voltage of a high-performance functional circuit (or semiconductor circuit) included in a system-on-chip (SoC) fluctuates according to the operating environment and the level of work performed. Generally, in order to prevent a droop phenomenon in which the voltage decreases significantly, a method of setting a protection band on the supply voltage so that the supply voltage has a value larger than the value used in a normal state is used. The protection band refers to a value that is additionally increased to the value of the supply voltage in a normal state in consideration of the droop. However, the power consumption of the SoC increases due to the setting of a high protection band, and thus the efficiency of the product may decrease.
本發明概念的實施例提供一種系統晶片及所述系統晶片的操作方法,所述系統晶片包括電壓下降檢測電路,所述電壓下降檢測電路可在已檢測到供應電壓的下降時藉由控制提供至功能電路的自適應性時脈訊號的頻率來提供所述功能電路的高效電力消耗。Embodiments of the inventive concept provide a system chip and a method for operating the system chip, wherein the system chip includes a voltage drop detection circuit, and the voltage drop detection circuit can provide efficient power consumption of the functional circuit by controlling the frequency of an adaptive clock signal provided to the functional circuit when a drop in supply voltage has been detected.
根據本發明概念的實施例的態樣,提供一種系統晶片,所述系統晶片包括:功能電路,被配置成接收供應電壓且實行處理操作;電壓下降檢測電路,被配置成監測所述供應電壓且產生指示是否已發生電壓下降的檢測訊號;時脈產生電路,被配置成輸出時脈訊號;以及時脈調變電路,被配置成接收所述檢測訊號及所述時脈訊號,藉由將所述時脈訊號調變成對應於所述檢測訊號來產生自適應性時脈訊號,且向所述功能電路提供所述自適應性時脈訊號。所述電壓下降檢測電路包括:電壓下降檢測控制器,被配置成控制參考電壓保持恆定;參考電壓產生器,被配置成產生所述參考電壓;以及檢測訊號產生器,被配置成藉由對所述參考電壓與所述供應電壓進行比較來產生所述檢測訊號。According to an embodiment of the present invention, a system chip is provided, which includes: a functional circuit configured to receive a supply voltage and perform a processing operation; a voltage drop detection circuit configured to monitor the supply voltage and generate a detection signal indicating whether a voltage drop has occurred; a clock generation circuit configured to output a clock signal; and a clock modulation circuit configured to receive the detection signal and the clock signal, generate an adaptive clock signal by modulating the clock signal to correspond to the detection signal, and provide the adaptive clock signal to the functional circuit. The voltage drop detection circuit includes: a voltage drop detection controller configured to control a reference voltage to remain constant; a reference voltage generator configured to generate the reference voltage; and a detection signal generator configured to generate the detection signal by comparing the reference voltage with the supply voltage.
根據本發明概念的實施例的態樣,提供一種系統晶片的操作方法,所述操作方法包括藉由所述系統晶片中所包括的電壓下降檢測電路監測所述供應電壓。所述供應電壓由所述系統晶片中所包括的功能電路接收,且所述功能電路被配置成實行處理操作。所述方法更包括:對所述供應電壓的位準與參考電壓的位準進行比較;基於所述比較的結果而產生檢測訊號;以及基於所述檢測訊號而調整時脈訊號的頻率。According to an aspect of an embodiment of the inventive concept, a method for operating a system chip is provided, the method comprising monitoring a supply voltage by a voltage drop detection circuit included in the system chip. The supply voltage is received by a functional circuit included in the system chip, and the functional circuit is configured to perform a processing operation. The method further comprises: comparing the level of the supply voltage with the level of a reference voltage; generating a detection signal based on the result of the comparison; and adjusting the frequency of a clock signal based on the detection signal.
根據本發明概念的實施例的態樣,提供一種系統晶片,所述系統晶片包括:第一功能電路,被配置成接收供應電壓且實行第一處理操作;第一電壓下降檢測電路,被配置成監測所述供應電壓且產生指示是否已發生電壓下降的第一檢測訊號;第二功能電路,被配置成接收所述供應電壓且實行第二處理操作;第二電壓下降檢測電路,被配置成監測所述供應電壓且產生指示是否已發生所述電壓下降的第二檢測訊號;時脈產生電路,被配置成輸出時脈訊號;以及時脈調變電路。所述時脈調變電路被配置成接收所述第一檢測訊號及所述第二檢測訊號以及所述時脈訊號,藉由將所述時脈訊號調變成分別對應於所述第一檢測訊號及所述第二檢測訊號來產生第一自適應性時脈訊號及第二自適應性時脈訊號,且分別向所述第一功能電路及所述第二功能電路提供所述第一自適應性時脈訊號及所述第二自適應性時脈訊號。所述第一電壓下降檢測電路包括:第一控制器,被配置成控制第一參考電壓保持恆定;第一參考電壓產生器,被配置成產生所述第一參考電壓;第一檢測訊號產生器,被配置成藉由對所述第一參考電壓與所述供應電壓進行比較來產生所述第一檢測訊號。所述第二電壓下降檢測電路包括:第二控制器,被配置成控制第二參考電壓保持恆定;第二參考電壓產生器,被配置成產生所述第二參考電壓;以及第二檢測訊號產生器,被配置成藉由對所述參考電壓與所述供應電壓進行比較來產生所述第二檢測訊號。According to an embodiment of the present invention, a system chip is provided, which includes: a first functional circuit, configured to receive a supply voltage and perform a first processing operation; a first voltage drop detection circuit, configured to monitor the supply voltage and generate a first detection signal indicating whether a voltage drop has occurred; a second functional circuit, configured to receive the supply voltage and perform a second processing operation; a second voltage drop detection circuit, configured to monitor the supply voltage and generate a second detection signal indicating whether the voltage drop has occurred; a clock generation circuit, configured to output a clock signal; and a clock modulation circuit. The clock modulation circuit is configured to receive the first detection signal and the second detection signal and the clock signal, and generate a first adaptive clock signal and a second adaptive clock signal by modulating the clock signal to correspond to the first detection signal and the second detection signal, respectively, and provide the first adaptive clock signal and the second adaptive clock signal to the first functional circuit and the second functional circuit, respectively. The first voltage drop detection circuit includes: a first controller, configured to control a first reference voltage to remain constant; a first reference voltage generator, configured to generate the first reference voltage; and a first detection signal generator, configured to generate the first detection signal by comparing the first reference voltage with the supply voltage. The second voltage drop detection circuit includes: a second controller configured to control a second reference voltage to remain constant; a second reference voltage generator configured to generate the second reference voltage; and a second detection signal generator configured to generate the second detection signal by comparing the reference voltage with the supply voltage.
將在下文中參考附圖更充分地闡述本發明概念的實施例。在附圖通篇中,相似的參考編號可指代相似的元件。Embodiments of the present inventive concept will be more fully described hereinafter with reference to the accompanying drawings. Throughout the accompanying drawings, like reference numerals may refer to like elements.
將理解,在本文中使用用語「第一」、「第二」、「第三」等來區分一個元件與另一元件,且元件不受該些用語限制。因此,實施例中的「第一」元件在另一實施例中可被闡述為「第二」元件。It will be understood that the terms "first", "second", "third", etc. are used herein to distinguish one element from another element, and the elements are not limited by these terms. Therefore, the "first" element in an embodiment may be described as the "second" element in another embodiment.
應理解,對每一實施例內的特徵或態樣的說明通常應被視為可用於其他實施例中的其他類似的特徵或態樣,除非上下文另有清楚地指示。It should be understood that descriptions of features or aspects within each embodiment should typically be considered as available for other similar features or aspects in other embodiments, unless the context clearly dictates otherwise.
本文中所使用的單數形式「一(a/an)」及「所述(the)」旨在亦包括複數形式,除非上下文另有明確指示。As used herein, the singular forms “a”, “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise.
在本文中,如熟習此項技術者將理解,當兩個或更多個元件或值被闡述為彼此實質上相同或約相等時,應理解元件或值彼此等同,元件或值在量測誤差內彼此相等,或若明顯不相等,則值足夠接近以在功能上彼此相等。舉例而言,就所談論的量測及與特定數量的量測相關聯的誤差(例如,量測系統的限制)而言,本文中所使用的用語「約(about)」包括所陳述的值且意指在熟習此項技術者確定的特定值的可接受的偏差範圍內。舉例而言,熟習此項技術者應理解,「約」可意指在一或多個標準偏差內。此外,應理解,雖然參數在本文中可被闡述為具有「約」某一值,但根據實施例,參數可正好是某一值或在量測誤差內近似地是某一值,如熟習此項技術者將理解。用於闡述組件之間的關係的該些用語及類似用語的其他使用應以相似的方式加以解釋。As will be understood by one skilled in the art, herein, when two or more elements or values are described as being substantially the same or approximately equal to one another, it is understood that the elements or values are equivalent to one another, are equal to one another within measurement error, or, if significantly unequal, are close enough in value to be functionally equal to one another. For example, with respect to the measurements in question and the errors associated with the measurement of a particular quantity (e.g., limitations of the measurement system), the term "about" as used herein includes the stated value and means within an acceptable range of deviations of the particular value determined by one skilled in the art. For example, one skilled in the art will understand that "about" may mean within one or more standard deviations. Furthermore, it should be understood that although a parameter may be described herein as having "about" a certain value, depending on the embodiment, the parameter may be exactly a certain value or approximately a certain value within measurement error, as will be understood by those skilled in the art. Other uses of these and similar terms to describe relationships between components should be interpreted in a similar manner.
圖1是示意性地說明根據實施例的系統晶片10的方塊圖。圖2是詳細地說明根據實施例的系統晶片10的方塊圖。圖1的系統晶片10可被稱為自適應性時脈系統。Fig. 1 is a block diagram schematically illustrating a
參考圖1,系統晶片10可包括功能電路100、電壓下降檢測電路200、溫度感測器300及時脈控制器400。1 , the
更詳細而言,參考圖2,功能電路100可包括遠端溫度感測器(remote temperature sensor,RTS)110,電壓下降檢測電路200可包括電壓下降檢測(voltage droop detection,VDD)控制器210及參考電壓產生器220,且時脈控制器400可包括時脈產生電路410及時脈調變電路420。In more detail, referring to FIG. 2 , the
一起參考圖1及圖2,功能電路100可藉由經由電力線PL接收供應電壓VSUP來實行某種處理操作。在實施例中,功能電路100可被實施為硬體,例如(舉例而言)中央處理單元(central processing unit)、圖形處理單元(graphics processing unit)、處理器、數據機或類似硬體。RTS 110可為量測功能電路100內的溫度的感測器。1 and 2 together, the
電壓下降檢測電路200可經由電力線PL監測供應電壓VSUP,且可產生且向時脈調變電路420提供指示供應電壓VSUP是否已發生下降的檢測訊號FLAG。The voltage
在實施例中,當供應電壓VSUP下跌至低於參考電壓時,電壓下降檢測電路200可產生高位準檢測訊號FLAG。舉例而言,電壓下降檢測電路200可使用具有不同位準的多個參考電壓來產生檢測訊號FLAG,檢測訊號FLAG包括多個位元以指示供應電壓VSUP出現下降及所發生的下降的程度。In an embodiment, when the supply voltage VSUP drops below the reference voltage, the voltage
溫度感測器300可量測系統晶片10內的溫度。在一些實施例中,溫度感測器300可量測功能電路100的溫度。溫度是影響功能電路100的操作的參數。當溫度太高時,功能電路100可能難以與具有高頻率的自適應性時脈訊號ACLK同步地平順實行處理操作。因此,根據上文所述的本發明概念的實施例,當溫度約等於或大於參考溫度時,時脈調變電路420可降低自適應性時脈訊號ACLK的頻率。溫度感測器300可產生指示系統晶片10的溫度狀態的溫度感測訊號TSS。The
在實施例中,電壓下降檢測電路200可基於自溫度感測器300接收到的溫度感測訊號TSS而產生檢測訊號FLAG。In an embodiment, the voltage
除了溫度感測器300之外,系統晶片10可更包括用於感測影響功能電路100的操作的參數的至少一個感測器,且時脈調變電路420可實行基於自電壓下降檢測電路200接收到的檢測訊號FLAG而調變時脈訊號CLK的頻率的操作。In addition to the
當向功能電路100提供處於正常狀態中的供應電壓VSUP時,時脈產生電路410可產生具有與功能電路100的操作頻率對應的頻率的時脈訊號CLK。時脈產生電路410可被實施為例如鎖相迴路(phase-locked loop,PLL)或鎖頻迴路(frequency-locked loop,FLL)。When the supply voltage VSUP in a normal state is provided to the
時脈調變電路420可接收檢測訊號FLAG及時脈訊號CLK,藉由將時脈訊號CLK調變成對應於檢測訊號FLAG來產生自適應性時脈訊號ACLK,且向所述功能電路100提供自適應性時脈訊號ACLK。在實施例中,時脈調變電路420可根據供應電壓VSUP下降的程度來調整自適應性時脈訊號ACLK的頻率。當下降的程度增大時,時脈調變電路420可將自適應性時脈訊號ACLK的頻率設定成低於時脈訊號CLK的頻率,且可根據功能電路100的操作環境及功能電路100實行的工作的水準來自適應性地調整自適應性時脈訊號ACLK的頻率,如參考圖6至圖8進一步闡述。The
在實施例中,時脈調變電路420可因應於檢測訊號FLAG而對時脈訊號CLK進行分頻或多工以調整時脈訊號CLK的頻率,藉此提供自適應性時脈訊號ACLK。為此,時脈調變電路420可包括多個分頻器及多工器。所述多個分頻器中的每一者可對時脈訊號CLK的頻率進行分頻,且多工器可向自適應性時脈訊號ACLK輸出所述多個分頻器的至少一個輸出。參考圖5闡述時脈調變電路420的詳細配置。In an embodiment, the
根據實施例的時脈控制器400可在供應電壓VSUP已發生下降時將時脈訊號CLK的頻率調變至低位準,且向功能電路100提供具有已調變頻率的時脈訊號CLK。The
功能電路100基於頻率較供應電壓VSUP發生下降之前低的自適應性時脈訊號ACLK而實行處理操作,使得功能電路100的電力消耗可在一定時間週期內減小。因此,系統晶片10可在下降的供應電壓VSUP迅速地恢復時實行穩定的操作,且可減小施加至供應電壓VSUP的防護頻帶以減小系統晶片10消耗的電力總量。The
即,當供應電壓VSUP已發生下降(電壓降)時,圖1的系統晶片10可檢測所述下降以使用時脈調變電路420改變時脈訊號CLK的頻率,藉此使得功能電路100能以低電壓操作。That is, when the supply voltage VSUP has decreased (voltage drop), the
圖3是說明根據實施例的電壓下降檢測電路200的方塊圖。FIG. 3 is a block diagram illustrating a voltage
參考圖3,電壓下降檢測電路200可包括VDD控制器210、參考電壓產生器220及檢測訊號產生器230。3 , the voltage
VDD控制器210可控制其中電壓下降檢測電路200檢測供應電壓VSUP是否已發生下降的總體操作。The
參考電壓產生器220可因應於VDD控制器210的控制訊號而向檢測訊號產生器230提供參考電壓VREF。舉例而言,參考電壓產生器220可向檢測訊號產生器230提供多個參考電壓VREF。下文參考圖4闡述參考電壓產生器220的詳細配置。The
檢測訊號產生器230可藉由檢查供應電壓VSUP是否小於參考電壓VREF來判斷是否已發生下降。檢測訊號產生器230可基於判斷結果而產生且向圖2的時脈調變電路420提供檢測訊號FLAG。舉例而言,檢測訊號產生器230可對供應電壓VSUP與所述多個參考電壓VREF中的每一者進行比較以具體地確定供應電壓VSUP的量值,藉此在已發生下降時產生檢測訊號FLAG,檢測訊號FLAG包括指示供應電壓VSUP下降的程度的多個位元。並且,檢測訊號產生器230可包括對供應電壓VSUP與參考電壓VREF進行比較的比較器。The
圖4是說明根據實施例的參考電壓產生器220的方塊圖。FIG. 4 is a block diagram illustrating a
參考圖4,參考電壓產生器220可包括能帶間隙參考(band gap reference,BGR)電路221、參考電壓緩衝器222、數位/類比轉換器(digital-to-analog converter,DAC)223及DAC緩衝器224。4 , the
BGR電路221可產生能帶間隙參考電壓。參考電壓緩衝器222可接收所述能帶間隙參考電壓且輸出DAC參考電壓。DAC 223可根據輸入碼將DAC參考電壓轉換成類比參考電壓。DAC 223可輸出類比參考電壓。DAC緩衝器224可輸出類比參考電壓VREF。The
舉例而言,BGR電路221可產生約0.35伏特的能帶間隙參考電壓,且參考電壓緩衝器222可輸出約0.8伏特的DAC參考電壓。DAC 223可接收DAC參考電壓且將DAC參考電壓轉換成類比參考電壓以輸出約0伏特至約0.8伏特的類比參考電壓。DAC緩衝器224可輸出約0伏特至約0.8伏特的類比參考電壓VREF。For example, the
下文參考圖8闡述參考電壓產生器220調整參考電壓的方法。The method for adjusting the reference voltage by the
圖5是說明根據實施例的時脈調變電路420的方塊圖。FIG5 is a block diagram illustrating a
參考圖5,時脈調變電路420可包括多個分頻器421及422以及多工器423。5 , the
所述多個分頻器421及422可接收時脈訊號CLK且按照彼此不同的分頻比(division rate)對時脈訊號CLK進行分頻以產生具有彼此不同的頻率的第一分頻時脈訊號DCLK1與第二分頻時脈訊號DCLK2。舉例而言,第一分頻時脈訊號DCLK1的頻率及第二分頻時脈訊號DCLK2的頻率可約等於時脈訊號CLK的頻率,或第一分頻時脈訊號DCLK1的頻率及第二分頻時脈訊號DCLK2的頻率可小於時脈訊號CLK的頻率。The plurality of
圖5示出時脈調變電路420包括兩個分頻器421及422的情形,但時脈調變電路420並非僅限於此且可包括任何數目的分頻器。FIG. 5 shows a case where the
多工器423可因應於檢測訊號FLAG而輸出第一分頻時脈訊號DCLK1及第二分頻時脈訊號DCLK2中的任一者來作為自適應性時脈訊號ACLK。The
舉例而言,當供應電壓已發生下降時,多工器423可選擇且輸出第一分頻時脈訊號DCLK1作為自適應性時脈訊號ACLK。第一分頻時脈訊號DCLK1的頻率可小於時脈訊號CLK的頻率。當選擇且輸出第一分頻時脈訊號DCLK1來作為自適應性時脈訊號ACLK時,輸出的自適應性時脈訊號ACLK的頻率可小於時脈訊號CLK的頻率。For example, when the supply voltage has dropped, the
當供應電壓未發生下降時,多工器423可選擇且輸出第二分頻時脈訊號DCLK2來作為自適應性時脈訊號ACLK。在本文中,第二分頻時脈訊號DCLK2可為頻率約等於時脈訊號CLK的頻率的時脈訊號。When the supply voltage does not drop, the
圖5中所示的時脈調變電路420可根據各種因素(例如(舉例而言)供應電壓下降的程度、功能電路的操作環境或類似因素)來自適應性地調整頻率比率。The
圖6是說明根據實施例的電壓下降檢測電路200的操作的圖表。FIG. 6 is a graph illustrating the operation of the voltage
一起參考圖2、圖3及圖6,由於在第一時間點t1供應電壓VSUP的位準大於參考電壓VREF的位準,因此檢測訊號FLAG可處於第一邏輯位準(例如,低位準)。由時脈產生電路410輸出的時脈訊號CLK可處於第一邏輯位準。2, 3 and 6, since the level of the supply voltage VSUP is greater than the level of the reference voltage VREF at the first time point t1, the detection signal FLAG may be at a first logic level (eg, a low level). The clock signal CLK output by the
由於在第二時間點t2供應電壓VSUP的位準仍大於參考電壓VREF的位準,因此檢測訊號FLAG可保持於第一邏輯位準。由時脈產生電路410輸出的時脈訊號CLK可轉變至第二邏輯位準(例如,高位準)。Since the level of the supply voltage VSUP is still greater than the level of the reference voltage VREF at the second time point t2, the detection signal FLAG can be maintained at the first logic level. The clock signal CLK output by the
儘管在第三時間點t3供應電壓VSUP的位準減小,但供應電壓VSUP的位準大於參考電壓VREF的位準,且因此檢測訊號FLAG可保持於第一邏輯位準。由時脈產生電路410輸出的時脈訊號CLK可轉變至第一邏輯位準。Although the level of the supply voltage VSUP decreases at the third time point t3, the level of the supply voltage VSUP is greater than the level of the reference voltage VREF, and thus the detection signal FLAG can be maintained at the first logic level. The clock signal CLK output by the
儘管在第四時間點t4供應電壓VSUP的位準減小,但供應電壓VSUP的位準大於參考電壓VREF的位準,且因此檢測訊號FLAG可保持於第一邏輯位準。由時脈產生電路410輸出的時脈訊號CLK可轉變至第二邏輯位準。Although the level of the supply voltage VSUP decreases at the fourth time point t4, the level of the supply voltage VSUP is greater than the level of the reference voltage VREF, and thus the detection signal FLAG can be maintained at the first logic level. The clock signal CLK output by the
由於在第五時間點t5供應電壓VSUP的位準減小且變得小於參考電壓VREF的位準,因此檢測訊號FLAG可轉變至第二邏輯位準。Since the level of the supply voltage VSUP decreases and becomes less than the level of the reference voltage VREF at the fifth time point t5, the detection signal FLAG may be transferred to the second logic level.
即,檢測訊號產生器230可在第五時間點t5對參考電壓VREF與下降的供應電壓VSUP進行比較以基於比較結果而產生檢測訊號FLAG。舉例而言,當下降的供應電壓VSUP的位準小於參考電壓VREF的位準時,檢測訊號產生器230可產生處於第二邏輯位準(例如,高位準)的檢測訊號FLAG,檢測訊號FLAG指示下降的供應電壓VSUP的狀態。That is, the
時脈調變電路420可在第五時間點t5接收檢測訊號FLAG且調變時脈訊號CLK。舉例而言,時脈調變電路420可對時脈訊號CLK的頻率進行分頻以使得時脈訊號CLK保持於第一邏輯位準而非轉變至第二邏輯位準。The
由於在第六時間點t6供應電壓VSUP的位準仍小於參考電壓VREF的位準,因此檢測訊號FLAG可保持於第二邏輯位準,且時脈訊號CLK亦可保持於第一邏輯位準。Since the level of the supply voltage VSUP is still lower than the level of the reference voltage VREF at the sixth time point t6, the detection signal FLAG can be maintained at the second logic level, and the clock signal CLK can also be maintained at the first logic level.
由於在第七時間點t7供應電壓VSUP的位準仍小於參考電壓VREF的位準,因此檢測訊號FLAG可保持於第二邏輯位準,且時脈訊號CLK可轉變至第二邏輯位準。Since the level of the supply voltage VSUP is still lower than the level of the reference voltage VREF at the seventh time point t7, the detection signal FLAG may be maintained at the second logic level, and the clock signal CLK may be converted to the second logic level.
時脈調變電路420可在第七時間點t7將時脈訊號CLK轉變至第二邏輯位準以調變時脈訊號CLK的頻率且向功能電路100提供自適應性時脈訊號ACLK。即,功能電路100可基於頻率低於時脈訊號CLK的頻率的自適應性時脈訊號ACLK而實行處理操作,藉此能夠以低電壓操作且亦減少電力消耗。The
由於在第八時間點t8供應電壓VSUP的位準仍小於參考電壓VREF的位準,因此檢測訊號FLAG可保持於第二邏輯位準,且時脈訊號CLK亦可保持於第二邏輯位準。Since the level of the supply voltage VSUP is still lower than the level of the reference voltage VREF at the eighth time point t8, the detection signal FLAG can be maintained at the second logic level, and the clock signal CLK can also be maintained at the second logic level.
由於在第九時間點t9供應電壓VSUP的位準仍小於參考電壓VREF的位準,因此檢測訊號FLAG可保持於第二邏輯位準,且時脈訊號CLK可轉變至第一邏輯位準。Since the level of the supply voltage VSUP is still lower than the level of the reference voltage VREF at the ninth time point t9, the detection signal FLAG may be maintained at the second logic level, and the clock signal CLK may be converted to the first logic level.
時脈調變電路420可在第九時間點t9將時脈訊號CLK轉變至第一邏輯位準以調變時脈訊號CLK的頻率且向功能電路100提供自適應性時脈訊號ACLK。即,功能電路100可基於頻率低於時脈訊號CLK的頻率的自適應性時脈訊號ACLK而實行處理操作,藉此能夠以低電壓操作且亦減少電力消耗。The
由於在第十時間點t10供應電壓VSUP的位準約等於參考電壓VREF的位準,因此檢測訊號FLAG可轉變至第一邏輯位準。時脈訊號CLK亦可轉變至第二邏輯位準。Since the level of the supply voltage VSUP is approximately equal to the level of the reference voltage VREF at the tenth time point t10, the detection signal FLAG can be converted to the first logic level. The clock signal CLK can also be converted to the second logic level.
由於在第十一時間點t11供應電壓VSUP的位準大於參考電壓VREF的位準,因此檢測訊號FLAG可保持於第一邏輯位準下。時脈訊號CLK可轉變至第一邏輯位準。Since the level of the supply voltage VSUP is greater than the level of the reference voltage VREF at the eleventh time point t11, the detection signal FLAG can be maintained at the first logic level. The clock signal CLK can be converted to the first logic level.
第十二時間點t12可保持於與第十一時間點t11的狀態相同的狀態下。The twelfth time point t12 may be maintained in the same state as that of the eleventh time point t11.
圖7A及圖7B是各自示出根據實施例的根據功能電路100的元件的溫度特性而變化的下降電壓位準的圖表。7A and 7B are graphs each showing a drop voltage level that varies according to temperature characteristics of elements of the
參考圖7A及圖7B,水平軸代表溫度,且垂直軸代表供應電壓的下降電壓位準。一起參考圖1、圖7A及圖7B,供應電壓根據溫度特性而下降的程度可根據功能電路100的元件特性而各有不同。元件特性可藉由系統晶片內的元件(例如,CPU或晶圓)的製程拐點來區分。舉例而言,元件特性可被劃分成緩慢製程拐點、正常製程拐點及快速製程拐點。舉例而言,圖7A示出根據製程而最佳化的考量到梯度的下降電壓位準,且圖7B示出根據製程而最佳化的考量到偏移的下降電壓位準。Referring to FIG. 7A and FIG. 7B , the horizontal axis represents temperature, and the vertical axis represents the drop voltage level of the supply voltage. Referring to FIG. 1 , FIG. 7A , and FIG. 7B together, the degree to which the supply voltage drops according to the temperature characteristics may vary according to the component characteristics of the
參考圖7A及圖7B,當功能電路100的元件具有第一元件特性SS時(例如,當功能電路100的元件對應於緩慢製程拐點時),下降電壓位準可隨著系統晶片的溫度升高而增大。7A and 7B, when the element of the
當功能電路100的元件具有第二元件特性NN時(例如,當功能電路100的元件對應於正常製程拐點時),下降電壓位準可隨著系統晶片的溫度升高而增大。如圖7A及圖7B中所示,對應於第二元件特性NN的下降電壓位準可小於對應於第一元件特性SS的下降電壓位準。When the element of the
當功能電路100的元件具有第三元件特性FF時(例如,當功能電路100的元件對應於快速製程拐點時),下降電壓位準可隨著系統晶片的溫度升高而增大。When the device of the
舉例而言,參考圖7A,在25攝氏度下,第一元件特性SS所致的下降電壓位準、第二元件特性NN所致的下降電壓位準及第三元件特性FF所致的下降電壓位準可約相同,且在85攝氏度下,第一元件特性SS所致的下降電壓位準可大於第二元件特性NN所致的下降電壓位準,且第二元件特性NN所致的下降電壓位準可大於第三元件特性FF所致的下降電壓位準。圖7A示出在考量到梯度的影響的情況下每一製程的根據溫度而變化的下降電壓位準。For example, referring to FIG. 7A , at 25 degrees Celsius, the voltage drop level caused by the first device characteristic SS, the voltage drop level caused by the second device characteristic NN, and the voltage drop level caused by the third device characteristic FF may be approximately the same, and at 85 degrees Celsius, the voltage drop level caused by the first device characteristic SS may be greater than the voltage drop level caused by the second device characteristic NN, and the voltage drop level caused by the second device characteristic NN may be greater than the voltage drop level caused by the third device characteristic FF. FIG. 7A shows the voltage drop level according to the temperature change of each process in consideration of the influence of the gradient.
舉例而言,參考圖7B,在25攝氏度下,第一元件特性SS所致的下降電壓位準可大於第二元件特性NN所致的下降電壓位準,且第二元件特性NN所致的下降電壓位準可大於第三元件特性FF所致的下降電壓位準。圖7B示出在考量到偏移的影響的情況下每一製程的下降電壓位準。For example, referring to FIG7B , at 25 degrees Celsius, the voltage drop level caused by the first device characteristic SS may be greater than the voltage drop level caused by the second device characteristic NN, and the voltage drop level caused by the second device characteristic NN may be greater than the voltage drop level caused by the third device characteristic FF. FIG7B shows the voltage drop level of each process in consideration of the effect of the offset.
如圖7A及圖7B中所示,根據功能電路100的元件特性的下降電壓位準可根據溫度改變而線性地(或幾乎線性地)改變。因此,可相對於與溫度及製程對應的下降電壓位準來將參考電壓產生器的參考電壓最佳化。As shown in FIG. 7A and FIG. 7B , the drop voltage level according to the device characteristics of the
圖8是說明根據實施例的調整參考電壓的方法的圖。FIG. 8 is a diagram illustrating a method of adjusting a reference voltage according to an embodiment.
圖8是有關於藉由對供應電壓VSUP與參考電壓VREF進行比較來調整參考電壓VREF(即,最小電壓Vmin)的方法。VSUP防護頻帶可包括VSUP下降及VSUP預期下降。當確定VSUP防護頻帶時,可確定參考電壓VREF的最小電壓Vmin。當已明顯發生VSUP預期下降時,供應電壓VSUP變得低於最小電壓Vmin,且因此功能電路可能失靈。FIG8 is about a method of adjusting the reference voltage VREF (i.e., the minimum voltage Vmin) by comparing the supply voltage VSUP with the reference voltage VREF. The VSUP protection band may include a VSUP drop and an expected VSUP drop. When the VSUP protection band is determined, the minimum voltage Vmin of the reference voltage VREF may be determined. When the expected VSUP drop has significantly occurred, the supply voltage VSUP becomes lower than the minimum voltage Vmin, and thus the functional circuit may malfunction.
可增大供應電壓VSUP的位準以即使在已發生下降時仍防止功能電路失靈。即,圖4的參考電壓產生器220可輸出多個參考電壓VREF。電壓下降檢測電路可藉由對所述多個參考電壓VREF與供應電壓VSUP進行比較來檢測所述下降,且在已發生下降時產生檢測訊號。時脈調變電路可藉由接收所述檢測訊號來調變時脈訊號的頻率,且向功能電路提供自適應性時脈訊號。The level of the supply voltage VSUP may be increased to prevent the functional circuit from malfunctioning even when a drop has occurred. That is, the
如圖8中所示,根據實施例的系統晶片可藉由在供應電壓已發生下降時提供具有較之前提供至功能電路的自適應性時脈訊號的頻率低的頻率的自適應性時脈訊號來在一定時間週期內減少功能電路的電力消耗。因此,系統晶片可在下降的供應電壓迅速地恢復時實行穩定的操作,且可減小施加至供應電壓的防護頻帶以減小由系統晶片消耗的電力總量。As shown in FIG8 , the system chip according to the embodiment can reduce the power consumption of the functional circuit for a certain period of time by providing an adaptive clock signal having a frequency lower than the frequency of the adaptive clock signal previously provided to the functional circuit when the supply voltage has dropped. Therefore, the system chip can perform stable operation when the dropped supply voltage is quickly restored, and the guard band applied to the supply voltage can be reduced to reduce the total amount of power consumed by the system chip.
圖9是說明根據實施例的系統晶片的操作方法的流程圖。FIG. 9 is a flow chart illustrating an operating method of a system chip according to an embodiment.
參考圖2及圖9,電壓下降檢測電路200可監測提供至功能電路100的供應電壓VSUP(S110)。2 and 9 , the voltage
當供應電壓VSUP已發生下降時,電壓下降檢測電路200可產生檢測訊號FLAG(S120)。舉例而言,其中供應電壓VSUP已發生下降的情形可是指其中供應電壓VSUP的位準小於參考電壓VREF的位準的情形。When the supply voltage VSUP has dropped, the voltage
一起參考圖1及圖9,時脈控制器400可藉由基於檢測訊號FLAG而調變時脈訊號CLK的頻率來產生自適應性時脈訊號ACLK(S130)。1 and 9 together, the
圖10是說明根據實施例的系統晶片的操作方法的流程圖。FIG. 10 is a flow chart illustrating an operating method of a system chip according to an embodiment.
在下文中,如上文參考圖2所述,假定檢測訊號產生器230可對供應電壓VSUP與所述多個參考電壓VREF中的每一者進行比較以基於比較結果而產生檢測訊號FLAG。Hereinafter, as described above with reference to FIG. 2 , it is assumed that the
參考圖1、圖2及圖10,電壓下降檢測電路200可檢查供應電壓VSUP的狀態(S210)。1 , 2 , and 10 , the voltage
檢測訊號產生器230可對供應電壓VSUP的位準與參考電壓VREF的位準進行比較(S220)。當供應電壓VSUP的位準小於參考電壓VREF的位準時(在S220處,是),檢測訊號產生器230可產生檢測訊號FLAG(S230)。舉例而言,當供應電壓VSUP已發生下降時,時脈調變電路420可依據檢測訊號FLAG檢查供應電壓VSUP下降的程度。檢測訊號產生器230可向時脈調變電路420提供檢測訊號FLAG。The
時脈調變電路420可調整時脈訊號CLK的頻率(S240)。舉例而言,參考圖5,所述多個分頻器421及422可接收時脈訊號CLK且按照彼此不同的分頻比對時脈訊號CLK進行分頻以產生具有彼此不同的頻率的第一分頻時脈訊號DCLK1與第二分頻時脈訊號DCLK2。The
時脈調變電路420可產生自適應性時脈訊號ACLK(S250)。舉例而言,參考圖5,多工器423可因應於檢測訊號FLAG而輸出第一分頻時脈訊號DCLK1及第二分頻時脈訊號DCLK2中的任一者來作為自適應性時脈訊號ACLK。The
根據圖10中所示的實施例,當供應電壓VSUP已發生下降(電壓降)時,系統晶片可檢測所述下降以改變時脈訊號CLK的頻率,藉此使得系統晶片的功能電路以低電壓操作。According to the embodiment shown in FIG. 10 , when the supply voltage VSUP has decreased (voltage drop), the system chip can detect the decrease to change the frequency of the clock signal CLK, thereby allowing the functional circuits of the system chip to operate at a low voltage.
圖11是說明根據實施例的系統晶片20的方塊圖。為了方便闡釋,省略先前參考圖1所述的元件及技術態樣的進一步說明。FIG11 is a block diagram illustrating a
參考圖11,系統晶片20可包括功能電路100、電壓下降檢測電路200、溫度感測器300及時脈控制器400。與圖1不同,圖11示出其中功能電路100與電壓下降檢測電路200包括於同一區塊150中而非具有單獨配置的情形。舉例而言,電壓下降檢測電路200可佈置於功能電路100內,或功能電路100及電壓下降檢測電路200可彼此相鄰地佈置於區塊150中。當功能電路100與電壓下降檢測電路200被佈置成彼此相鄰時,電壓下降檢測電路200可在供應電壓VSUP下跌至低於參考電壓時迅速地產生指示是否已發生下降的檢測訊號FLAG。11 , the
圖12是說明根據實施例的系統晶片30的方塊圖。為了方便闡釋,省略先前參考圖1及圖11所述的組件及技術態樣的進一步說明。FIG12 is a block diagram illustrating a
參考圖12,系統晶片30可包括第一功能電路100_1、第一電壓下降檢測電路200_1、第二功能電路100_2、第二電壓下降檢測電路200_2、時脈產生電路410及時脈調變電路420。系統晶片30可更包括溫度感測器。12 , the
與圖1及圖2的系統晶片10及20不同,圖12中所示的系統晶片30可包括用於每一功能電路的電壓下降檢測電路。Unlike the
第一功能電路100_1及第二功能電路100_2可藉由接收供應電壓VSUP來實行處理操作。第一電壓下降檢測電路200_1及第二電壓下降檢測電路200_2可監測供應電壓VSUP且可分別產生指示供應電壓VSUP是否已發生下降的檢測訊號FLAG1及FLAG2且向時脈調變電路420提供檢測訊號FLAG1及FLAG2。The first function circuit 100_1 and the second function circuit 100_2 can perform processing operations by receiving the supply voltage VSUP. The first voltage drop detection circuit 200_1 and the second voltage drop detection circuit 200_2 can monitor the supply voltage VSUP and can respectively generate detection signals FLAG1 and FLAG2 indicating whether the supply voltage VSUP has dropped and provide the detection signals FLAG1 and FLAG2 to the
參考圖2所述的實施例可適用於時脈產生電路410及時脈調變電路420。舉例而言,時脈調變電路420可接收檢測訊號FLAG1及FLAG2且將時脈訊號CLK調變成對應於檢測訊號FLAG1及FLAG2以產生第一自適應性時脈訊號ACLK1及第二自適應性時脈訊號ACLK2,且分別向第一功能電路100_1及第二功能電路100_2提供第一自適應性時脈訊號ACLK1及第二自適應性時脈訊號ACLK2。2 may be applied to the
在實施例中,當第一電壓下降檢測電路200_1的電壓下降程度不同於第二電壓下降檢測電路200_2的電壓下降程度時,第一自適應性時脈訊號ACLK1的頻率可不同於第二自適應性時脈訊號ACLK2的頻率。In an embodiment, when the voltage drop degree of the first voltage drop detection circuit 200_1 is different from the voltage drop degree of the second voltage drop detection circuit 200_2, the frequency of the first adaptive clock signal ACLK1 may be different from the frequency of the second adaptive clock signal ACLK2.
圖12示出系統晶片30包括兩個功能電路(第一功能電路100_1及第二功能電路100_2)以及兩個電壓下降檢測電路(第一電壓下降檢測電路200_1及第二電壓下降檢測電路200_2),但系統晶片30並非僅限於此且可包括任何數目的功能電路及電壓下降檢測電路。FIG. 12 shows that the
圖13是說明包括根據實施例的系統晶片的資料處理系統1000的方塊圖。FIG. 13 is a block diagram illustrating a
參考圖13,資料處理系統1000可包括應用處理器(application processor,AP)1100、電源管理積體電路(power management integrated circuit,PMIC)1200及記憶體裝置1300。13 , a
圖13中所示的資料處理系統1000可對應於各種類型的計算系統,例如採用應用處理器1100的行動系統。The
應用處理器1100可被實施為根據實施例的系統晶片。所述系統晶片可包括適用具有某種標準匯流排規格的協定的系統匯流排,且可包括連接至所述系統匯流排的各種類型的智慧財產(intellectual property,IP)。可應用進階精簡指令集電腦(reduced instruction set computer,RISC)機器(Advanced RISC Machine,ARM)的進階微控制器匯流排架構(advanced microcontroller bus architecture,AMBA)協定來作為系統匯流排的標準規格。The
應用處理器1100可包括中央處理單元(CPU)510、電壓下降檢測電路(voltage droop detection circuit,VDDC)520、動態電壓與頻率調節(dynamic voltage and frequency scaling,DVFS)控制器530、時脈調變電路(clock modulation circuit,CMC)單元540、時脈產生電路(clock generation circuit,CGC)550及記憶體控制器介面(memory controller interface,MCI)560。CPU 510、VDDC 520、DVFS控制器530、CMC 540、CGC 550及記憶體控制器介面560可各自構成功能電路。因此,CPU 510、VDDC 520、DVFS控制器530、CMC 540、CGC 550及記憶體控制器介面560可各自對應於圖1及圖11的功能電路100。The
CPU 510可控制應用處理器1100中的各種類型的功能區塊。CPU 510可經由記憶體控制器介面560而往來於資料處理系統1000外部的記憶體裝置1300發送及接收資料存取請求。在實施例中,藉由在對CPU 510施加供應電壓之後量測供應電壓的位準,可檢查參考圖1至圖12所述的實施例是否適用於資料處理系統1000。在實施例中,藉由在對CPU 510施加供應電壓及時脈訊號之後量測所述供應電壓的位準,亦可檢查參考圖1至圖12所述的實施例是否適用於資料處理系統1000。The
CGC 550可產生時脈訊號CLK且向CMC 540提供時脈訊號CLK。The
CMC 540可基於時脈訊號CLK而產生第一自適應性時脈訊號ACLK1及第二自適應性時脈訊號ACLK2,向CPU 510提供第一自適應性時脈訊號ACLK1,且向MCI 560提供第二自適應性時脈訊號ACLK2。舉例而言,CMC可基於自VDDC 520接收到的檢測訊號FLAG而調變時脈訊號CLK的頻率以產生第一自適應性時脈訊號ACLK1。The
VDDC 520可對應於圖1中所示的電壓下降檢測電路200。VDDC 520可監測提供至CPU 510的供應電壓VSUP,且當供應電壓VSUP已發生下降時,VDDC 520可向CMC 540及DVFS控制器530提供指示所發生的下降的檢測訊號FLAG。VDDC 520可包括VDD控制器210、參考電壓產生器220及檢測訊號產生器230,如圖3中所示。
DVFS控制器530可基於檢測訊號FLAG而向PMIC 1200提供電壓控制訊號VCTL,且PMIC 1200可基於電壓控制訊號VCTL而調整供應電壓VSUP的位準。DVFS控制器530可自CPU 510接收指示CPU 510的操作速度的狀態訊號STS。DVFS控制器530可基於狀態訊號STS而確定或預測CPU 510及記憶體裝置1300的操作速度。DVFS控制器530可向PMIC 1200提供反映所確定的操作速度的電壓控制訊號VCTL。The
MCI 560可根據來自CPU 510的請求向記憶體裝置1300提供命令。MCI 560可根據應用處理器1100的操作來將資料寫入至記憶體裝置1300或自記憶體裝置1300讀取資料。The
記憶體裝置1300可為各種類型的半導體記憶體裝置。舉例而言,記憶體裝置1300可為動態隨機記憶體(dynamic random memory,DRAM),例如雙倍資料速率同步動態隨機存取記憶體(double data rate synchronous DRAM,DDR SDRAM)、低功率雙倍資料速率(low power double data rate,LPDDR)SDRAM、圖形雙倍資料速率(graphics double data rate,GDDR)SDRAM、藍博士動態隨機存取記憶體(Rambus dynamic random-access memory,RDRAM)或類似記憶體。The
記憶體裝置1300可因應於電壓控制訊號VCTL而調整來自PMIC 1200的供應電壓VSUP的位準,且據此產生具有供應電壓VSUP的經過調整的位準的內部電壓來作為操作電壓。根據實施例,記憶體裝置1300可在操作速度改變之前或在自MCI 560提供的第二自適應性時脈訊號ACLK2的頻率改變之前提前調整操作電壓的位準。根據實施例,記憶體裝置1300可對應於操作速度的改變而不同地設定操作電壓的位準的調整時間點。The
PMIC 1200可向應用處理器1100及記憶體裝置1300提供供應電壓VSUP。PMIC 1200可向應用處理器1100及記憶體裝置1300提供具有不同的功率位準的供應電壓VSUP。PMIC 1200與應用處理器1100可形成單獨的系統晶片或形成單個系統晶片。The
圖14是說明根據實施例的包括系統晶片的行動系統2000的方塊圖。FIG. 14 is a block diagram illustrating a
參考圖14,行動系統2000可包括自適應性時脈系統2100、處理器(例如,應用處理器(AP)或積體數據機應用處理器(integrated modem application processor,MODAP)2200)、儲存裝置2300、顯示/觸控模組2400及緩衝記憶體2500。行動系統2000可包括例如個人數位助理(personal digital assistant,PDA)、可攜式電腦、上網本(web tablet)、無線電話、行動電話、數位音樂播放器、記憶卡或類似裝置。14 , a
根據實施例,行動系統2000可更包括安全晶片。安全晶片可被實施成提供總體安全功能。安全晶片可包括軟體及/或實現高安全水準的防竄改硬體,且可與處理器2200的可信賴執行環境(trusted execution environment,TEE)協作地操作。安全晶片可包括作業系統(operating system,OS)(例如,本地作業系統(OS))、內部資料儲存器(例如,安全儲存裝置)、控制對安全晶片的存取的存取控制區塊、實行例如所有權管理、密鑰管理、數位簽章、加密/解密等的安全功能區塊以及更新安全晶片的韌體的韌體更新區塊。安全晶片可為例如通用積體電路卡(universal integrated circuit card,UICC)(例如,全球用戶身份模組(Universal Subscriber Identity Module,USIM)、CDMA2000用戶身份模組(CDMA2000 SIM,CSIM)及積體式用戶身份模組(integrated SIM,ISIM))、用戶身份模組(SIM)卡、嵌入式安全元件(embedded secure element,eSE)、微型安全數位(micro secure digital,MicroSD)、貼簽(Sticker)或類似晶片。According to an embodiment, the
自適應性時脈系統2100可被實施為圖1至圖13中所示的系統晶片10、20及30。自適應性時脈系統2100可被實施成檢測至少一個電力線的供應電壓的下降,根據檢測結果產生自適應性時脈訊號ACLK,且向處理器2200提供自適應性時脈訊號ACLK。The
處理器2200可被實施成控制行動系統2000的總體操作及有線/無線通訊。舉例而言,處理器2200可為AP或MODAP。處理器2200可包括上文參考圖1至圖13所述的電壓下降檢測電路200。因此,可改良供應至處理器2200的供應電壓的下降,且可改良行動系統2000的穩定性。The
儲存裝置2300可包括例如嵌入式多媒體卡(embedded multimedia card,eMMC)、固態驅動器(solid state drive,SSD)、通用快閃儲存器(universal flash storage,UFS)或類似儲存裝置。儲存裝置2300可包括至少一個非揮發性記憶體裝置。所述至少一個非揮發性記憶體裝置可包括例如反及(NAND)快閃記憶體、垂直反及(vertical NAND,VNAND)、反或(NOR)快閃記憶體、電阻式隨機存取記憶體(resistive random-access memory,RRAM)、相變記憶體(phase-change memory,PRAM)、磁阻式隨機存取記憶體(magnetoresistive random access memory,MRAM)、鐵電隨機存取記憶體(ferroelectric random-access memory,FRAM)、自旋轉移力矩隨機存取記憶體(spin transfer torque random-access memory,STT-RAM)或類似的非揮發性記憶體裝置。儲存裝置2300可儲存藉由顯示/觸控模組2400輸入的資料。The
顯示/觸控模組2400可顯示由處理器2200處理的資料。顯示/觸控模組2400可接收自觸控螢幕輸入的資料。使用者可經由顯示/觸控模組2400輸入資料。在實施例中,當顯示/觸控模組2400自觸控螢幕接收資料時,可量測處理器2200的供應電壓的位準以檢查上文參考圖1至圖13所述的實施例是否適用於行動系統2000。The display/
緩衝記憶體2500可儲存在行動系統2000的處理操作期間利用的資料。The
根據實施例的行動系統2000可檢測由處理器2200消耗的供應電壓的下降且調變時脈訊號的頻率以防止電力線的供應電壓下降。因此,可穩定地實行行動系統2000的操作且可減少不必要的電力消耗。The
如在本發明概念的領域中通常所述,自功能區塊、單元及/或模組的角度闡述且在圖式中說明實施例。熟習此項技術者將瞭解,該些區塊、單元及/或模組是由可使用基於半導體的製作技術或其他製造技術形成的電子(或光學)電路(例如邏輯電路)、離散組件、微處理器、硬接線電路、記憶體元件、配線連接件等來實體地實施。在藉由微處理器或類似裝置實施區塊、單元及/或模組的情形中,可使用軟體(例如,微碼)將區塊、單元及/或模組程式化以實行本文中所論述的各種功能且能夠可選地藉由韌體及/或軟體來驅動所述區塊、單元及/或模組。作為另外一種選擇,每一區塊、單元及/或模組可藉由專用硬體來實施,或被實施為用於實行一些功能的專用硬體的組合以及用於實行其他功能的處理器(例如,一或多個程式化微處理器及相關聯的電路系統)。As is generally described in the art of the inventive concept, embodiments are described and illustrated in the drawings from the perspective of functional blocks, units and/or modules. Those skilled in the art will appreciate that these blocks, units and/or modules are physically implemented by electronic (or optical) circuits (e.g., logic circuits), discrete components, microprocessors, hard-wired circuits, memory elements, wiring connections, etc. that can be formed using semiconductor-based or other manufacturing technologies. In the case where blocks, units and/or modules are implemented by a microprocessor or similar device, the blocks, units and/or modules may be programmed using software (e.g., microcode) to implement the various functions discussed herein and may be optionally driven by firmware and/or software. Alternatively, each block, unit and/or module may be implemented by dedicated hardware, or implemented as a combination of dedicated hardware for implementing some functions and a processor for implementing other functions (e.g., one or more programmed microprocessors and associated circuit systems).
雖然已參考本發明概念的實施例特別地示出並闡述本發明概念,但將理解,可對本發明概念做出形式及細節上的各種改變,而此並非背離由以下申請專利範圍界定的本發明概念的精神及範疇。While the inventive concept has been particularly shown and described with reference to embodiments thereof, it will be understood that various changes in form and details may be made thereto without departing from the spirit and scope of the inventive concept as defined by the following claims.
10、20、30:系統晶片 100:功能電路 100_1:第一功能電路 100_2:第二功能電路 110:遠端溫度感測器(RTS) 150:區塊 200:電壓下降檢測電路 200_1:第一電壓下降檢測電路 200_2:第二電壓下降檢測電路 210:電壓下降檢測(VDD)控制器 220:參考電壓產生器 221:能帶間隙參考(BGR)電路 222:參考電壓緩衝器 223:數位/類比轉換器(DAC) 224:DAC緩衝器 230:檢測訊號產生器 300:溫度感測器 400:時脈控制器 410:時脈產生電路 420:時脈調變電路 421、422:分頻器 423:多工器 510:中央處理單元(CPU) 520:電壓下降檢測電路(VDDC) 530:動態電壓與頻率調節(DVFS)控制器 540:時脈調變電路(CMC)單元 550:時脈產生電路(CGC) 560:記憶體控制器介面(MCI) 1000:資料處理系統 1100:應用處理器 1200:電源管理積體電路(PMIC) 1300:記憶體裝置 2000:行動系統 2100:自適應性時脈系統 2200:積體數據機應用處理器(MODAP)/處理器 2300:儲存裝置 2400:顯示/觸控模組 2500:緩衝記憶體 ACLK:自適應性時脈訊號 ACLK1:第一自適應性時脈訊號 ACLK2:第二自適應性時脈訊號 CLK:時脈訊號 DCLK1:第一分頻時脈訊號 DCLK2:第二分頻時脈訊號 FLAG:檢測訊號/高位準檢測訊號 FLAG1、FLAG2:檢測訊號 FF:第三元件特性 NN:第二元件特性 PL:電力線 S110、S120、S130、S210、S220、S230、S240、S250:步驟 SS:第一元件特性 STS:狀態訊號 t1:第一時間點 t2:第二時間點 t3:第三時間點 t4:第四時間點 t5:第五時間點 t6:第六時間點 t7:第七時間點 t8:第八時間點 t9:第九時間點 t10:第十時間點 t11:第十一時間點 t12:第十二時間點 TSS:溫度感測訊號 VCTL:電壓控制訊號 VREF:參考電壓 Vmin:最小電壓 VSUP:供應電壓 10, 20, 30: System chip 100: Functional circuit 100_1: First functional circuit 100_2: Second functional circuit 110: Remote temperature sensor (RTS) 150: Block 200: Voltage drop detection circuit 200_1: First voltage drop detection circuit 200_2: Second voltage drop detection circuit 210: Voltage drop detection (VDD) controller 220: Reference voltage generator 221: Bandgap reference (BGR) circuit 222: Reference voltage buffer 223: Digital/analog converter (DAC) 224: DAC buffer 230: Detection signal generator 300: Temperature sensor 400: Pulse controller 410: Pulse generation circuit 420: Pulse modulation circuit 421, 422: Frequency divider 423: Multiplexer 510: Central processing unit (CPU) 520: Voltage drop detection circuit (VDDC) 530: Dynamic voltage and frequency regulation (DVFS) controller 540: Pulse modulation circuit (CMC) unit 550: Pulse generation circuit (CGC) 560: Memory controller interface (MCI) 1000: Data processing system 1100: Application processor 1200: Power management integrated circuit (PMIC) 1300: Memory device 2000: Mobile system 2100: Adaptive clock system 2200: Integrated modem application processor (MODAP)/processor 2300: Storage device 2400: Display/touch module 2500: Buffer memory ACLK: Adaptive clock signal ACLK1: First adaptive clock signal ACLK2: Second adaptive clock signal CLK: Clock signal DCLK1: First frequency division clock signal DCLK2: Second frequency division clock signal FLAG: Detection signal/high level detection signal FLAG1, FLAG2: Detection signal FF: Third component characteristic NN: Second component characteristic PL: Power line S110, S120, S130, S210, S220, S230, S240, S250: Steps SS: First component characteristic STS: Status signal t1: First time point t2: Second time point t3: Third time point t4: Fourth time point t5: Fifth time point t6: Sixth time point t7: Seventh time point t8: Eighth time point t9: Ninth time point t10: Tenth time point t11: Eleventh time point t12: Twelfth time point TSS: Temperature sensing signal VCTL: Voltage control signal VREF: Reference voltage Vmin: Minimum voltage VSUP: Supply voltage
藉由參考附圖詳細地闡述本發明概念的實施例,本發明概念的以上及其他特徵將變得更顯而易見,在附圖中: 圖1是示意性地說明根據實施例的系統晶片的方塊圖。 圖2是詳細地說明根據實施例的系統晶片的方塊圖。 圖3是說明根據實施例的電壓下降檢測電路的方塊圖。 圖4是說明根據實施例的參考電壓產生器的方塊圖。 圖5是說明根據實施例的時脈調變電路的方塊圖。 圖6是說明根據實施例的電壓下降檢測電路的操作的圖表。 圖7A及圖7B是各自示出根據實施例的根據功能電路的元件的溫度特性而變化的下降電壓位準的圖表。 圖8是說明根據實施例的調整參考電壓的方法的圖。 圖9是說明根據實施例的系統晶片的操作方法的流程圖。 圖10是說明根據實施例的系統晶片的操作方法的流程圖。 圖11是說明根據實施例的系統晶片的方塊圖。 圖12是說明根據實施例的系統晶片的方塊圖。 圖13是說明包括根據實施例的系統晶片的資料處理系統的方塊圖。 圖14是說明根據實施例的包括系統晶片的行動系統的方塊圖。 The above and other features of the present invention will become more apparent by describing in detail embodiments of the present invention with reference to the accompanying drawings, in which: FIG. 1 is a block diagram schematically illustrating a system chip according to an embodiment. FIG. 2 is a block diagram illustrating a system chip according to an embodiment in detail. FIG. 3 is a block diagram illustrating a voltage drop detection circuit according to an embodiment. FIG. 4 is a block diagram illustrating a reference voltage generator according to an embodiment. FIG. 5 is a block diagram illustrating a clock modulation circuit according to an embodiment. FIG. 6 is a diagram illustrating the operation of a voltage drop detection circuit according to an embodiment. FIG. 7A and FIG. 7B are graphs each showing a drop voltage level that varies according to the temperature characteristics of an element of a functional circuit according to an embodiment. FIG. 8 is a diagram illustrating a method of adjusting a reference voltage according to an embodiment. FIG. 9 is a flow chart illustrating an operation method of a system chip according to an embodiment. FIG. 10 is a flow chart illustrating an operation method of a system chip according to an embodiment. FIG. 11 is a block diagram illustrating a system chip according to an embodiment. FIG. 12 is a block diagram illustrating a system chip according to an embodiment. FIG. 13 is a block diagram illustrating a data processing system including a system chip according to an embodiment. FIG. 14 is a block diagram illustrating a mobile system including a system chip according to an embodiment.
10:系統晶片 10: System on Chip
100:功能電路 100: Functional circuit
110:遠端溫度感測器(RTS) 110: Remote Temperature Sensor (RTS)
200:電壓下降檢測電路 200: Voltage drop detection circuit
210:電壓下降檢測(VDD)控制器 210: Voltage drop detection (VDD) controller
220:參考電壓產生器 220: Reference voltage generator
300:溫度感測器 300: Temperature sensor
400:時脈控制器 400: Clock controller
410:時脈產生電路 410: Clock generation circuit
420:時脈調變電路 420: Clock modulation circuit
ACLK:自適應性時脈訊號 ACLK: Adaptive clock signal
CLK:時脈訊號 CLK: clock signal
FLAG:檢測訊號/高位準檢測訊號 FLAG: Detection signal/high-level detection signal
PL:電力線 PL: Power lines
TSS:溫度感測訊號 TSS: Temperature sensing signal
VSUP:供應電壓 VSUP: Supply voltage
Claims (20)
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| KR20230052213 | 2023-04-20 | ||
| KR10-2023-0052213 | 2023-04-20 | ||
| KR1020230094020A KR20240155709A (en) | 2023-04-20 | 2023-07-19 | System on chip including voltage droop detection circuit and method of operation thereof |
| KR10-2023-0094020 | 2023-07-19 |
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| TW202509703A true TW202509703A (en) | 2025-03-01 |
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| US (1) | US20240353907A1 (en) |
| TW (1) | TW202509703A (en) |
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