TW202507911A - Carrier adherence mechanism of plasma processing system - Google Patents

Abstract

A carrier adherence mechanism of plasma processing system is disposed in a vacuum plasma processing chamber for carrying out a plasma process on a to-be-processed substrate. The vacuum plasma processing chamber includes a first electrode. The carrier adherence mechanism includes a second electrode plate and a double-sided adhesive member. The first electrode and the second electrode plate are disposed in positional alignment, with a plasma processing space formed therebetween. The double-sided adhesive member is disposed between the to-be-processed and the second electrode plate. The adhesive force of one side of the double sided adhesive member neighboring the to-be-processed substrate is greater than that of the other side thereof neighboring the second the second electrode plate. When the to-be-processed substrate is separated from the second electrode plate, the double-sided adhesive member stays on the to-be-processed substrate. Thus, the present invention prevents the to-be-processed substrate from warping during the plasma process.

Description

Carrier pasting mechanism and carrier pasting method of plasma process system

The present application relates to a carrier pasting mechanism, and more particularly to a carrier pasting mechanism and a carrier pasting method for a plasma process system.

As technology advances, many industry technologies are becoming more mature, especially in the semiconductor industry. From the perspective of the semiconductor industry, the manufacturing process of wafers and circuit boards requires surface etching, cleaning and other process treatments. Among them, plasma treatment, as one of the main technologies for manufacturing semiconductors and circuit boards, naturally occupies a place.

During plasma processing, the heat generated in the plasma processing chamber may cause the object to warp or shift. To address this, the object is usually fixed in the plasma processing chamber by edge clamping to prevent the object from warping or slipping. However, during the clamping process, the object may move due to contact with the clamping object, resulting in inaccurate alignment in subsequent processes.

Therefore, solving the above problems is a major issue that the industry must overcome.

The main purpose of this application is to improve the thermal factors generated in the plasma process chamber in the past, which causes the substrate to be processed to warp, thereby resulting in a decrease in the process yield of the substrate to be processed.

Another purpose of the present application is to prevent the substrate to be processed from shifting while being fixed and clamped, thereby preventing the subsequent process from having inaccurate alignment.

The above purpose does not preclude the existence of other purposes. If a person with ordinary knowledge in the relevant technical field can derive the purpose from the description of the specification, patent application scope or drawings, it is also included in the purpose of this application. Therefore, the purpose of this application is not limited to the above listed purposes.

To achieve the above-mentioned purpose, the present application provides a carrier pasting mechanism of a plasma process system, which is arranged in a vacuum plasma process chamber and used to perform plasma process treatment on a substrate to be processed. A first electrode is arranged in the vacuum plasma process chamber, and the carrier pasting mechanism includes a second electrode plate and a double-sided pasting member. The first electrode and the second electrode plate are arranged correspondingly, and a plasma process space is formed between the second electrode plate and the first electrode; the double-sided adhesive piece is arranged between the substrate to be processed and the second electrode plate, and the adhesive force of the double-sided adhesive piece adjacent to one side of the substrate to be processed is greater than the adhesive force of the double-sided adhesive piece adjacent to one side of the second electrode plate, so that when the substrate to be processed and the second electrode plate are separated, the double-sided adhesive piece stays on the substrate to be processed.

In another embodiment of the present application, the present application provides a carrier pasting method of a plasma process system, which performs a plasma process on a substrate to be processed in a vacuum plasma process chamber, wherein a first electrode is disposed in the vacuum plasma process chamber. The carrier pasting method comprises the following steps:

Step S1: providing a double-sided adhesive member, wherein the double-sided adhesive member comprises a first adhesive layer and a second adhesive layer;

Step S2: The substrate to be processed is fixed and subjected to plasma processing by disposing a first adhesive layer on one side of the substrate to be processed and a second adhesive layer on one side of a second electrode plate, and the adhesive force between the substrate to be processed and the first adhesive layer is greater than the adhesive force between the substrate to be processed and the second adhesive layer;

Step S3: separating the substrate to be processed from the second electrode plate; and

Step S4: Separate the double-sided adhesive component from the substrate to be processed.

Based on the above technical features, this application has the following characteristics:

1. The present application can adhere the substrate to be processed to the second electrode plate by using the high adhesive force of the double-sided adhesive. In this way, the substrate to be processed can be effectively prevented from warping due to heat factors, thereby increasing the process yield of the substrate to be processed.

2. The present application prevents displacement of the substrate to be processed by placing a double-sided adhesive between the substrate to be processed and the second electrode plate, thereby avoiding the problem of inaccurate alignment in subsequent processes.

3. In this application, the adhesion force of the double-sided adhesive piece adjacent to one side of the substrate to be processed is greater than the adhesion force of the double-sided adhesive piece adjacent to one side of the second electrode plate, so that the double-sided adhesive piece can stay on the substrate to be processed when the substrate to be processed and the second electrode plate are separated, thereby reducing the situation where the double-sided adhesive piece cannot be separated due to being too tightly adhered.

In order to facilitate the description of the central idea of the present application in the above invention content column, specific embodiments are used for illustration. Various objects in the embodiments are depicted according to the proportions, sizes, deformations or displacements suitable for the description, rather than being drawn according to the proportions of the actual elements, which should be noted in advance.

The following describes in detail exemplary embodiments of the present application with reference to the accompanying drawings, and is not intended to limit the technical principles of the present application to specific disclosed embodiments. Instead, the scope of the present application is limited only by the scope of the patent application, covering alternatives, modifications and equivalents.

Please refer to FIG. 1 to FIG. 6 , the present application provides a carrier pasting mechanism 100 of a plasma process system, which is arranged in a vacuum plasma process chamber 1 and used to perform a plasma process on a substrate 2 to be processed. A first electrode 3 is arranged in the vacuum plasma process chamber 1, and the carrier pasting mechanism 100 includes a second electrode plate 10 and a double-sided pasting member 20. In the embodiment of the present application, the substrate 2 to be processed can be a wafer, a circuit carrier (e.g., PCB, FPCB), a composite carrier, a soft board, an ABF carrier, etc., which require the vacuum plasma process chamber 1 to be plasma etched, cleaned, and coated.

Please refer to FIG. 1 , the first electrode 3 and the second electrode plate 10 are disposed correspondingly, and a plasma process space 4 is formed between the second electrode plate 10 and the first electrode 3 . The substrate 2 to be processed is subjected to plasma treatment in the plasma process space 4 .

The double-sided adhesive member 20 is disposed between the substrate 2 to be processed and the second electrode plate 10. The adhesive force of the double-sided adhesive member 20 adjacent to one side of the substrate 2 to be processed is greater than the adhesive force of the double-sided adhesive member 20 adjacent to one side of the second electrode plate 10, so that when the substrate 2 to be processed and the second electrode plate 10 are separated, the double-sided adhesive member 20 stays on the substrate 2 to be processed.

In a preferred embodiment of the present application, the double-sided adhesive member 20 can be made of silicone material to adhere to the substrate 2 to be processed, and the substrate 2 to be processed can obtain a higher adhesion to prevent the substrate 2 to be processed from warping and arbitrary displacement during the plasma process. The adhesion of the double-sided adhesive member 20 can be between 0.05kg/inch and 1.0kg/inch, for example: 0.05, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9 and 1.0kg/inch. In addition, the double-sided adhesive member 20 has the material property of being repeatedly adhered to the substrate 2 to be processed.

Please refer to FIG. 2 . First, it should be noted that, in order to conveniently reveal the positional relationship of the double-sided adhesive 20 , the substrate 2 to be processed is displayed transparently in FIG. 2 . In a preferred embodiment of the present application, there are a plurality of double-sided adhesives 20 , and the double-sided adhesives 20 are arranged at intervals on the surface of the substrate 2 to be processed, so that the substrate 2 to be processed has a plurality of adhesive areas 2a to be adhered to the double-sided adhesives 20 and a plurality of exposed areas 2b outside the adhesive areas 2a . More specifically, the adhesive areas 2a and the exposed areas 2b may be long strips and arranged in strips on the surface of the substrate 2 to be processed. Please refer to FIG. 3 . In another embodiment of the present application, the exposed areas 2b may be arranged in a field shape on the surface of the substrate 2 to be processed, so that the adhesive areas 2a are square. Furthermore, the exposed areas 2b are further extended from the chevron-shaped arrangement to the diagonal line, so that the sticking areas 2a are triangular.

Please refer to FIG. 4, which is a schematic diagram showing the relationship between the thickness of the double-sided adhesive member 20 and the temperature of the substrate 2 to be processed. In a preferred embodiment of the present application, the thickness of the double-sided adhesive member 20 can be between 0.05 mm and 0.5 mm, for example, 0.05, 0.1, 0.16, 0.2, 0.3, 0.4 and 0.5 mm. If the thickness of the double-sided adhesive member 20 is less than 0.05 mm, the adhesive force of the double-sided adhesive member 20 will decrease, so that the substrate 2 to be processed and the second electrode plate 10 cannot be effectively adhered. On the other hand, if the thickness of the double-sided adhesive member 20 is greater than 0.5 mm, the substrate 2 to be processed will be too far away from the second electrode plate 10, which is not conducive to the heat dissipation of the substrate 2 to be processed, thereby affecting the plasma process. Therefore, by making the thickness of the double-sided adhesive member 20 between 0.05 mm and 0.5 mm, the above-mentioned problem can be avoided.

Please refer to FIG. 5 and FIG. 6 , in a preferred embodiment of the present application, the double-sided adhesive member 20 includes a first adhesive layer 23, a main layer 24 and a second adhesive layer 25. The first adhesive layer 23 is adjacent to one side of the substrate 2 to be processed, the second adhesive layer 25 is adjacent to one side of the second electrode plate 10, and the main layer 24 is located between the first adhesive layer 23 and the second adhesive layer 25. The adhesive force of the first adhesive layer 23 is greater than the adhesive force of the second adhesive layer 25, and the difference between the adhesive force of the first adhesive layer 23 and the adhesive force of the second adhesive layer 25 can be greater than 0.3 kg/inch. The present application utilizes the difference in adhesive force between the first adhesive layer 23 and the second adhesive layer 25 so that when the substrate 2 to be processed and the second electrode plate 10 are separated, the first adhesive layer 23 with a larger adhesive force coefficient remains adhered to the substrate 2 to be processed, while the second adhesive layer 25 with a smaller adhesive force coefficient is separated from the second electrode plate 10, thereby achieving the purpose of the double-sided adhesive member 20 staying on the substrate 2 to be processed.

In a preferred embodiment of the present application, the main body layer 24 can be made of a high-temperature resistant polyimide film material. Due to the high-temperature resistant property of the main body layer 24, it is not easy for the material to change due to thermal factors.

Please refer to FIG. 7 , in another embodiment of the present application, the second electrode plate 10 may include a low-adhesion surface 26 adjacent to the double-sided adhesive member 20, and the adhesion of the first adhesive layer 23 and the second adhesive layer 25 in the double-sided adhesive member 20 may be set to be the same, so as to achieve the purpose of the adhesion of the double-sided adhesive member 20 adjacent to one side of the substrate 2 to be processed being greater than the adhesion of the double-sided adhesive member 20 adjacent to one side of the second electrode plate 10. The low-adhesion surface 26 can be formed by modifying the surface of the second electrode plate 10 so that the adhesion of the side where the double-sided adhesive member 20 contacts the second electrode plate 10 is less than the adhesion of the side where the substrate 2 to be processed contacts the double-sided adhesive member 20; or the surface of the second electrode plate 10 can be coated to form the low-adhesion surface 26.

In one embodiment of the present application, a limiting unit 30 is further included, which is disposed on one side of the second electrode plate 10 adjacent to the first electrode 3, and the substrate 2 to be processed is clamped between the limiting unit 30 and the second electrode plate 10. The limiting unit 30 is in the shape of a frame with a hollow in the middle, and clamps and fixes the outer periphery of the substrate 2 to be processed. The limiting unit 30 applies pressure to the outer periphery of the substrate 2 to be processed, so as to further prevent the substrate 2 to be processed from being warped by heat.

Please refer to FIG. 8 to FIG. 11 , in a preferred embodiment of the present application, the second electrode plate 10 further includes a separation unit 11, and the separation unit 11 is adjacent to the substrate 2 to be processed to separate the substrate 2 to be processed and the second electrode plate 10. Among them, the present application provides the following several implementation methods to illustrate the feasibility of the implementation of the separation unit 11:

1. Please refer to FIG. 8 , the separation unit 11 may include a gas filling channel 111 and a gas seal 112 provided with a corresponding exposed area 2b. The gas seal 112 is provided between the substrate 2 to be processed and the second electrode plate 10, and surrounds the gas filling channel 111 and the substrate 2 to be processed, thereby forming a closed space 5 between the substrate 2 to be processed and the second electrode plate 10. The gas filling channel 111 forces the substrate 2 to be processed and the second electrode plate 10 to be separated by inputting gas into the closed space 5.

2. Please refer to FIGS. 9 to 11 , the separation unit 11 may include a plurality of metal pillars 113 spaced apart from the exposed areas 2b (illustrated in FIGS. 2 and 3 ), and the metal pillars 113 may move between the substrate 2 to be processed and the second electrode plate 10 , and the metal pillars 113 push the substrate 2 to be processed to separate the substrate 2 to be processed and the second electrode plate 10 . In this embodiment, metal pillars are used to avoid plasma interference during the plasma process. In addition, the present application can adjust the number of the metal pillars 113 according to the actual implementation. For example, as shown in Figures 9 and 10, a larger number of metal pillars 113 can be set on the second electrode plate 10 to push up the substrate 2 to be processed, so as to evenly distribute the single-point pressure of pushing up the substrate 2 to be processed. In another embodiment, as shown in Figure 11, the spacing distance between the metal pillars 113 is longer, which can reduce the complexity of the actual arrangement of the circuit of the second electrode plate 10.

Please refer to FIG. 12 . In another embodiment of the present application, the present application provides a carrier pasting method of a plasma process system, which performs a plasma process on a substrate 2 to be processed in a vacuum plasma process chamber 1. A first electrode 3 is provided in the vacuum plasma process chamber 1. The carrier pasting method includes the following steps.

Step S1: providing a double-sided adhesive member 20 , wherein the double-sided adhesive member 20 comprises a first adhesive layer 23 and a second adhesive layer 25 .

Step S2: The first adhesive layer 23 is disposed on one side of the substrate 2 to be processed and the second adhesive layer 25 is disposed on one side of a second electrode plate 10 to fix the substrate 2 to be processed and perform a plasma process, and the adhesive force between the substrate 2 to be processed and the first adhesive layer 23 is greater than the adhesive force between the second electrode plate 10 and the second adhesive layer 25. In a preferred embodiment of the present application, the difference between the adhesive force of the first adhesive layer 23 and the adhesive force of the second adhesive layer 25 is greater than 0.3 kg/inch.

Step S3: Separate the substrate 2 to be processed from the second electrode plate 10. In a preferred embodiment of the present application, in step S3: the second electrode plate 10 has a low-adhesion surface 26 adjacent to the second adhesive layer 25, so that when the substrate 2 to be processed and the second electrode plate 10 are separated, the double-sided adhesive member 20 stays on the substrate 2 to be processed.

In a preferred embodiment of the present application, in step S3: a separation unit 11 adjacent to the substrate 2 to be processed is provided by the second electrode plate 10 to separate the substrate 2 to be processed from the second electrode plate 10. The separation unit 11 provides a gas injection channel 111 corresponding to the plurality of exposed areas 2b of the substrate 2 to be processed and a gas seal 112 provided between the substrate 2 to be processed and the second electrode plate 10. The gas seal 112 surrounds the gas injection channel 111 and the substrate 2 to be processed, and forms a closed space 5 between the substrate 2 to be processed and the second electrode plate 10. Gas is introduced into the closed space 5 through the gas injection channel 111 to force the substrate 2 to be processed and the second electrode plate 10 to be separated. In another embodiment, the separation unit 11 provides a plurality of metal pillars 113 spaced apart corresponding to the plurality of exposed areas 2b of the substrate 2 to be processed. The metal pillars 113 can move between the substrate 2 to be processed and the second electrode plate 10. The metal pillars 113 push up the substrate 2 to be processed to separate the substrate 2 from the second electrode plate 10.

Step S4: Separate the double-sided adhesive piece 20 from the substrate 2 to be processed. The separation unit 11 may include a robot arm to move the substrate 2 to be processed after being separated from the double-sided adhesive piece 20.

Combining the above technical features, this application has the following characteristics:

1. The present application utilizes the high adhesive force of the double-sided adhesive member 20 to adhere and position the substrate 2 to be processed on the second electrode plate 10 to prevent the substrate 2 to be processed from warping due to thermal factors during the plasma process.

2. The present application prevents displacement of the substrate 2 to be processed by placing a double-sided adhesive member 20 between the substrate 2 to be processed and the second electrode plate 10, thereby avoiding the problem of inaccurate alignment in subsequent processes.

3. The adhesive force of the double-sided adhesive member 20 adjacent to the substrate 2 to be processed is greater than the adhesive force of the double-sided adhesive member 20 adjacent to the second electrode plate 10, so that when the substrate 2 to be processed is separated from the second electrode plate 10, the double-sided adhesive member 20 can stay on the substrate 2 to be processed, preventing the problem of being too tightly adhered and unable to be separated.

4. The thickness of the double-sided adhesive member 20 of the present application is between 0.05 mm and 0.5 mm. In addition to not affecting the heat dissipation effect of the substrate 2 to be processed and having a better cooling effect, it can also take into account high adhesion.

5. In the present application, the double-sided adhesive members 20 are arranged at intervals on the surface of the substrate 2 to be processed. In this way, the area of the double-sided adhesive members 20 adhered to the surface of the substrate 2 to be processed can be reduced, thereby reducing the cost of the double-sided adhesive members 20.

The aforementioned effects do not preclude the existence of other effects. If the effects can be derived from the description of the specification, patent application scope or drawings by a person with ordinary knowledge in the relevant technical field, they are also included in the effects of this application. Therefore, the effects of this application are not limited to the aforementioned effects.

The above embodiments are only used to illustrate the present application and are not intended to limit the scope of the present application. Any modifications or changes that do not violate the spirit of the present application are within the scope of protection intended by the present application.

100: Carrier pasting mechanism 1: Vacuum plasma process chamber 2: Substrate to be processed 2a: Pasting area 2b: Exposed area 3: First electrode 4: Plasma process space 5: Closed space 10: Second electrode plate 11: Separation unit 111: Air filling channel 112: Air seal 113: Metal column 20: Double-sided pasting part 23: First pasting layer 24: Body layer 25: Second pasting layer 26: Low adhesion surface 30: Limiting unit   S1: Step S2: Step S3: Step S4: Step

Figure 1 is a schematic diagram of a vacuum plasma process chamber implementation of a preferred embodiment of the present application. Figure 2 is a schematic diagram of a three-dimensional appearance of a carrier pasting mechanism of a preferred embodiment of the present application. Figure 3 is a schematic diagram of a three-dimensional appearance of a carrier pasting mechanism of another preferred embodiment of the present application. Figure 4 is a schematic diagram of the relationship between the thickness of a double-sided pasting piece and the temperature of a substrate to be processed in a preferred embodiment of the present application. Figure 5 is a partially enlarged schematic diagram of a carrier pasting mechanism of a preferred embodiment of the present application. Figure 6 is a schematic diagram of a cross-sectional structure of a double-sided pasting piece of a preferred embodiment of the present application. Figure 7 is a partially enlarged schematic diagram of a carrier pasting mechanism of a second preferred embodiment of the present application. Figure 8 is a partially enlarged schematic diagram of the carrier pasting mechanism of the third preferred embodiment of this application. Figure 9 is a partially enlarged schematic diagram of the carrier pasting mechanism of the fourth preferred embodiment of this application. Figure 10 is a schematic diagram of the implementation of the carrier pasting mechanism of the fourth preferred embodiment of this application. Figure 11 is a partially enlarged schematic diagram of the carrier pasting mechanism of the fifth preferred embodiment of this application. Figure 12 is a schematic diagram of the step flow of the carrier pasting method of the first preferred embodiment of this application.

2: Substrate to be processed

10: Second electrode plate

23: First adhesive layer

24: Body layer

25: Second adhesive layer

30: Limiting unit

Claims (17)

A carrier pasting mechanism of a plasma process system is disposed in a vacuum plasma process chamber and is used to perform plasma process on a substrate to be processed. A first electrode is disposed in the vacuum plasma process chamber. The carrier pasting mechanism comprises: a second electrode plate disposed corresponding to the first electrode, a plasma process space is formed between the second electrode plate and the first electrode; and A double-sided adhesive piece is disposed between the substrate to be processed and the second electrode plate. The adhesive force of the double-sided adhesive piece adjacent to one side of the substrate to be processed is greater than the adhesive force of the double-sided adhesive piece adjacent to one side of the second electrode plate, so that when the substrate to be processed and the second electrode plate are separated, the double-sided adhesive piece stays on the substrate to be processed. A carrier pasting mechanism for a plasma process system as described in claim 1, wherein the double-sided pasting member comprises a first pasting layer adjacent to one side of the substrate to be processed, a second pasting layer adjacent to one side of the second electrode plate, and a main body layer between the first pasting layer and the second pasting layer, the pasting force of the first pasting layer is greater than the pasting force of the second pasting layer, and the difference between the pasting force of the first pasting layer and the pasting force of the second pasting layer is greater than 0.3 kg/inch. A carrier pasting mechanism for a plasma process system as described in claim 1, wherein the second electrode plate further comprises a low-adhesion surface adjacent to the double-sided adhesive member. A carrier pasting mechanism for a plasma process system as described in claim 1, wherein the adhesive force of the double-sided adhesive is between 0.05 kg/inch and 1.0 kg/inch. A carrier pasting mechanism for a plasma process system as described in claim 1, wherein the thickness of the double-sided adhesive is between 0.05 mm and 0.5 mm. A carrier pasting mechanism for a plasma process system as described in claim 1, wherein the double-sided adhesive members are plural in number and are arranged at intervals on the surface of the substrate to be processed, so that the substrate to be processed has a plurality of pasting areas for pasting the double-sided adhesive members and a plurality of exposed areas outside the pasting areas. A carrier pasting mechanism for a plasma process system as described in claim 6, wherein the pasting areas and the exposed areas are in the shape of long strips and are arranged in strips on the surface of the substrate to be processed. A carrier pasting mechanism for a plasma process system as described in claim 6, wherein the exposed areas are arranged in a crisscross pattern on the surface of the substrate to be processed. The carrier pasting mechanism of the plasma process system as described in claim 6, wherein the second electrode plate further includes a separation unit, which is adjacent to the substrate to be processed to separate the substrate to be processed from the second electrode plate. A carrier pasting mechanism for a plasma process system as described in claim 9, wherein the separation unit includes a gas filling channel and an air seal arranged corresponding to the exposed area, the air seal being arranged between the substrate to be processed and the second electrode plate, and enclosing the gas filling channel and the substrate to be processed, thereby forming a closed space between the substrate to be processed and the second electrode plate, and the gas filling channel inputs gas into the closed space to force the substrate to be processed and the second electrode plate to separate. A carrier pasting mechanism for a plasma process system as described in claim 9, wherein the separation unit includes a plurality of metal pillars spaced apart corresponding to the exposed area, the metal pillars being movable between the substrate to be processed and the second electrode plate, and the metal pillars pushing up the substrate to be processed to separate the substrate to be processed from the second electrode plate. A carrier pasting method of a plasma process system performs plasma process treatment on a substrate to be processed in a vacuum plasma process chamber, wherein a first electrode is provided in the vacuum plasma process chamber, and the carrier pasting method comprises the following steps: Step S1: providing a double-sided pasting member, wherein the double-sided pasting member comprises a first pasting layer and a second pasting layer; Step S2: by arranging the first pasting layer on one side of the substrate to be processed and the second pasting layer on one side of a second electrode plate, the substrate to be processed is fixed and plasma process treatment is performed, and the adhesive force between the substrate to be processed and the first pasting layer is greater than the adhesive force between the second electrode plate and the second pasting layer; Step S3: Separate the substrate to be processed from the second electrode plate; and Step S4: Separate the double-sided adhesive from the substrate to be processed. A carrier pasting method for a plasma process system as described in claim 12, wherein, in step S2: the difference between the adhesive force of the first adhesive layer and the adhesive force of the second adhesive layer is greater than 0.3 kg/inch. A carrier pasting method for a plasma process system as described in claim 12, wherein, in the step S3: the second electrode plate has a low-adhesion surface adjacent to the second adhesive layer so that the double-sided adhesive piece remains on the substrate to be processed when the substrate to be processed is separated from the second electrode plate. A carrier pasting method for a plasma process system as described in claim 12, wherein in step S3: the second electrode plate is used to provide a separation unit adjacent to the substrate to be processed, so as to separate the substrate to be processed and the second electrode plate. A carrier pasting method for a plasma process system as described in claim 15, wherein in step S3: the separation unit provides a gas filling channel arranged corresponding to the multiple exposed areas of the substrate to be processed and a gas seal arranged between the substrate to be processed and the second electrode plate, the gas seal surrounds the gas filling channel and the substrate to be processed, and forms a closed space between the substrate to be processed and the second electrode plate, and the substrate to be processed and the second electrode plate are forced to separate by inputting gas into the closed space through the gas filling channel. A carrier pasting method for a plasma process system as described in claim 15, wherein in step S3: the separation unit provides a plurality of metal pillars spaced apart corresponding to the plurality of exposed areas of the substrate to be processed, and the metal pillars can move between the substrate to be processed and the second electrode plate, and the substrate to be processed and the second electrode plate are separated by pushing up the substrate to be processed by the metal pillars.

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