TW202504165A - Antenna components, antenna arrays and antenna modules - Google Patents
Antenna components, antenna arrays and antenna modules Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/52—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q21/00—Antenna arrays or systems
- H01Q21/06—Arrays of individually energised antenna units similarly polarised and spaced apart
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
- H01Q9/04—Resonant antennas
- H01Q9/30—Resonant antennas with feed to end of elongated active element, e.g. unipole
- H01Q9/42—Resonant antennas with feed to end of elongated active element, e.g. unipole with folded element, the folded parts being spaced apart a small fraction of the operating wavelength
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Abstract
Description
本技術係關於一種能夠發送或接收例如毫米波之電磁波之天線元件、天線陣列及天線模組。The present technology relates to an antenna element, an antenna array and an antenna module capable of transmitting or receiving electromagnetic waves such as millimeter waves.
於在高頻區域使用之天線中,因能夠根據波長之長短而實現元件之小型化,故一般為在電子基板上由導電材料形成之圖案天線。特別是,近年來,於在蜂窩或雷達用途中使用之毫米波區域之小型天線中,要求在有限之空間之中更廉價・小型且高增益、進而在寬頻中指向性高之天線構造。作為量產性高且作為指向性天線最廣泛使用之天線構造,作為平面天線之貼片天線廣為人知(例如參考專利文獻1)。 [先前技術文獻] [專利文獻] Antennas used in high-frequency areas are generally pattern antennas formed of conductive materials on electronic substrates because they can miniaturize components according to the length of the wavelength. In particular, in recent years, small antennas in the millimeter wave area used in cellular or radar applications have required antenna structures that are cheaper, smaller, and have high gain and high directivity in a limited space. As an antenna structure with high mass production and the most widely used directional antenna, patch antennas are widely known as planar antennas (for example, refer to Patent Document 1). [Prior Art Document] [Patent Document]
[專利文獻1] 日本特開2022-51890號公報[Patent Document 1] Japanese Patent Application Publication No. 2022-51890
[發明所欲解決之問題][The problem the invention is trying to solve]
然而,貼片天線藉由單一元件可覆蓋之分數頻帶為數%左右,為了寬頻化而需要藉由複數元件實現之陣列化或跨及積層內而配置之元件彼此之諧振結構等更複雜之結構,而存在空間面及成本面之制約。However, the fractional bandwidth that a single chip antenna can cover is only a few percent. To achieve broadband, a more complex structure is required, such as an array structure that uses multiple components or a resonant structure that configures components across the stack. However, this is limited by space and cost.
鑒於如以上之事態,本技術之目的在於提供一種可以簡單之構造實現小型化、寬頻化之天線元件、天線陣列及天線模組。 [解決問題之技術手段] In view of the above situation, the purpose of this technology is to provide an antenna element, antenna array and antenna module that can achieve miniaturization and broadband with a simple structure. [Technical means to solve the problem]
本技術之一形態之天線元件包含:平面元件形狀之第1導體層、第2導體層、介電層、第1層間連接部、及第2層間連接部。 前述第2導體層連接於接地電位。 前述介電層設置於前述第1導體層與前述第2導體層之間。 前述第1層間連接部貫通前述介電層,將前述第1導體層向饋電部連接。 前述第2層間連接部貫通前述介電層,將前述第1導體層與前述第2導體層之間予以連接。 An antenna element of one form of the present technology includes: a first conductor layer in the shape of a planar element, a second conductor layer, a dielectric layer, a first interlayer connection portion, and a second interlayer connection portion. The second conductor layer is connected to the ground potential. The dielectric layer is disposed between the first conductor layer and the second conductor layer. The first interlayer connection portion penetrates the dielectric layer to connect the first conductor layer to the feeding portion. The second interlayer connection portion penetrates the dielectric layer to connect the first conductor layer to the second conductor layer.
上述天線元件之第1導體層作為放射元件發揮功能、第2導體層作為地導體板發揮功能,且藉由第1層間連接部、第1導體層及第2層間連接部形成環形天線。藉此,可以簡單之構造實現小型化、寬頻化。The first conductor layer of the antenna element functions as a radiation element, the second conductor layer functions as a ground conductor plate, and a ring antenna is formed by the first inter-layer connection portion, the first conductor layer, and the second inter-layer connection portion. Thus, miniaturization and broadband can be achieved with a simple structure.
前述第1導體層典型而言,以較前述第2導體層小之面積形成。藉此可實現設為目的之頻帶中之穩定之諧振。The first conductive layer is typically formed in a smaller area than the second conductive layer. This allows stable resonance in the intended frequency band to be achieved.
藉由前述第1層間連接部、前述第1導體層、及前述第2層間連接部形成之迴路長度,可為使用電波之1波長以下、例如相當於半波長之大小。藉此,可謀求天線元件之進一步之小型化。The loop length formed by the first inter-layer connection portion, the first conductive layer, and the second inter-layer connection portion can be less than one wavelength of the radio wave, for example, a length equivalent to half a wavelength. This can further miniaturize the antenna element.
前述第1導體層之平面形狀可為具有長邊及短邊之矩形。The planar shape of the first conductive layer may be a rectangle having long sides and short sides.
前述第1導體層具有連接前述第1層間連接部之第1區域、及連接前述第2層間連接部之第2區域,前述第1區域及前述第2區域可與前述第1導體層之周緣部分開配置。藉此,可擴展電波之指向性。The first conductive layer has a first region connected to the first inter-layer connecting portion and a second region connected to the second inter-layer connecting portion, and the first region and the second region can be arranged separately from the peripheral portion of the first conductive layer. Thereby, the directivity of the radio wave can be expanded.
前述第1區域與前述第2區域可沿與前述長邊平行之方向配置,亦可沿與平行於前述長邊之方向交叉之方向配置。The first region and the second region may be arranged along a direction parallel to the long side, or may be arranged along a direction intersecting the direction parallel to the long side.
可行的是,前述介電層係由介電材料構成之介電基板,前述第1導體層係形成於前述介電基板之第1主面之金屬層,前述第2導體層係形成於與前述第1主面為相反側之前述介電基板之第2主面之金屬層。It is feasible that the aforementioned dielectric layer is a dielectric substrate composed of a dielectric material, the aforementioned first conductive layer is a metal layer formed on the first main surface of the aforementioned dielectric substrate, and the aforementioned second conductive layer is a metal layer formed on the second main surface of the aforementioned dielectric substrate which is opposite to the aforementioned first main surface.
前述第2導體層可具有以較前述第1層間連接部大之開口徑形成之開口部。藉此,可簡化第1層間連接部與第2導體層之間之電性絕緣構造。The second conductive layer may have an opening portion formed with a larger opening diameter than the first inter-layer connecting portion. Thereby, the electrical insulation structure between the first inter-layer connecting portion and the second conductive layer can be simplified.
前述第1層間連接部及前述第2層間連接部可為設置於前述介電層之通孔電鍍或埋入導通孔。The first inter-layer connection portion and the second inter-layer connection portion may be through-hole electroplating or buried via holes provided in the dielectric layer.
本技術之一形態之天線陣列包含複數個天線元件。 前述複數個天線元件各自包含:平面元件形狀之第1導體層;第2導體層,其連接於接地電位;介電層,其設置於前述第1導體層與前述第2導體層之間;第1層間連接部,其貫通前述介電層,將前述第1導體層向饋電部連接;及第2層間連接部,其貫通前述介電層,將前述第1導體層與前述第2導體層之間予以連接。 前述複數個天線元件各者之前述第1導體層排列於前述介電層之一表面。 An antenna array of one form of the present technology includes a plurality of antenna elements. Each of the plurality of antenna elements includes: a first conductor layer in the shape of a planar element; a second conductor layer connected to a ground potential; a dielectric layer disposed between the first conductor layer and the second conductor layer; a first inter-layer connection portion penetrating the dielectric layer to connect the first conductor layer to a feeder portion; and a second inter-layer connection portion penetrating the dielectric layer to connect the first conductor layer to the second conductor layer. The first conductor layer of each of the plurality of antenna elements is arranged on a surface of the dielectric layer.
可行的是,前述複數個天線元件中之至少1個係發送用之天線元件,其他之至少1個係接收用之天線元件。It is feasible that at least one of the plurality of antenna elements is a transmitting antenna element, and at least one of the others is a receiving antenna element.
前述複數個天線元件可在前述表面上沿著相互正交之第1軸向及第2軸向矩陣狀排列。The plurality of antenna elements may be arranged in a matrix along a first axis and a second axis orthogonal to each other on the surface.
可行的是,前述第1導體層具有含有與前述第1軸向平行之長邊、及與前述第2軸向平行之短邊之矩形之平面形狀,沿前述第1軸向排列之2個前述第1導體層之相互對向之短邊,具有將前述2個第1導體層之間隔局部擴張之缺口部。It is feasible that the aforementioned first conductive layer has a rectangular planar shape including a long side parallel to the aforementioned first axis and a short side parallel to the aforementioned second axis, and the mutually opposing short sides of the two aforementioned first conductive layers arranged along the aforementioned first axis have a notch portion that partially expands the interval between the aforementioned two first conductive layers.
前述複數個天線元件各者之前述第2導體層可由共通之導體層形成。The second conductor layer of each of the plurality of antenna elements may be formed by a common conductor layer.
本技術之一形態之天線模組包含複數個天線元件、及信號處理電路。 前述複數個天線元件各自包含:平面元件形狀之第1導體層;第2導體層,其連接於接地電位;介電層,其設置於前述第1導體層與前述第2導體層之間;第1層間連接部,其貫通前述介電層,將前述第1導體層向饋電部連接;及第2層間連接部,其貫通前述介電層,將前述第1導體層與前述第2導體層之間予以連接。 前述信號處理電路連接於前述複數個天線元件。 An antenna module of one form of the present technology includes a plurality of antenna elements and a signal processing circuit. Each of the plurality of antenna elements includes: a first conductor layer in the shape of a planar element; a second conductor layer connected to a ground potential; a dielectric layer disposed between the first conductor layer and the second conductor layer; a first inter-layer connection portion penetrating the dielectric layer to connect the first conductor layer to a feeder portion; and a second inter-layer connection portion penetrating the dielectric layer to connect the first conductor layer to the second conductor layer. The signal processing circuit is connected to the plurality of antenna elements.
以下,一面參照圖式一面說明本技術之實施形態。Hereinafter, the implementation of the present technology will be described with reference to the drawings.
<第1實施形態> 圖1係本技術之第1實施形態之天線元件100之透過立體圖,圖2係其側剖視圖。再者,在圖中X軸、Y軸及Z軸表示相互正交之3軸方向,分別相當於天線元件100之縱向方向(前後方向)、橫向方向(寬度方向)及厚度方向(高度方向)。 <First Implementation Form> Figure 1 is a perspective view of the antenna element 100 of the first implementation form of the present technology, and Figure 2 is a side sectional view thereof. Furthermore, in the figure, the X-axis, Y-axis, and Z-axis represent three mutually orthogonal axial directions, which correspond to the longitudinal direction (front-back direction), transverse direction (width direction), and thickness direction (height direction) of the antenna element 100, respectively.
[天線元件之基本構成] 本實施形態之天線元件100作為發送用、接收用或收發用之毫米波天線而構成。天線元件100包含:介電層10、第1導體層21、第2導體層22、第1層間連接部31、及第2層間連接部32。天線元件100藉由介電體多層基板(雙面配線基板)構成。 [Basic structure of antenna element] The antenna element 100 of this embodiment is configured as a millimeter wave antenna for transmission, reception, or transceiver. The antenna element 100 includes: a dielectric layer 10, a first conductive layer 21, a second conductive layer 22, a first inter-layer connecting portion 31, and a second inter-layer connecting portion 32. The antenna element 100 is configured by a dielectric multi-layer substrate (double-sided wiring substrate).
介電層10設置於第1導體層21與第2導體層22之間。介電層10係具有剛性之介電基板,相當於構成上述介電體多層基板之絕緣層。介電層10之平面形狀為矩形,縱向(X軸方向)及橫向(Y軸方向)之長度例如形成為約5 mm。介電層10之厚度(Z軸方向)根據構成介電層10之介電材料之介電常數、使用之電波之波長而設定,在使用60 GHz頻帶之電波之本實施形態中例如為0.65 mm。The dielectric layer 10 is disposed between the first conductive layer 21 and the second conductive layer 22. The dielectric layer 10 is a dielectric substrate having rigidity, which is equivalent to an insulating layer constituting the above-mentioned dielectric multilayer substrate. The planar shape of the dielectric layer 10 is rectangular, and the lengths in the longitudinal direction (X-axis direction) and the lateral direction (Y-axis direction) are formed to be, for example, about 5 mm. The thickness (Z-axis direction) of the dielectric layer 10 is set according to the dielectric constant of the dielectric material constituting the dielectric layer 10 and the wavelength of the radio wave used, and is, for example, 0.65 mm in the present embodiment using the radio wave of the 60 GHz band.
作為構成介電層10之介電材料,例如可舉出FR4、BT樹脂、聚四氟乙烯等絕緣性有機材料、陶瓷等絕緣性無機材料等。介電層10之介電常數並無特別限定,可根據天線元件100發送或接收之電波之頻率而任意設定。例如,在60 GHz頻帶之電磁波之收發用途之情形下,作為介電基板10,使用介電常數例如為3.6之材料。As dielectric materials constituting the dielectric layer 10, for example, insulating organic materials such as FR4, BT resin, polytetrafluoroethylene, and insulating inorganic materials such as ceramics can be cited. The dielectric constant of the dielectric layer 10 is not particularly limited and can be arbitrarily set according to the frequency of the radio waves transmitted or received by the antenna element 100. For example, in the case of transmitting and receiving electromagnetic waves in the 60 GHz band, a material with a dielectric constant of, for example, 3.6 is used as the dielectric substrate 10.
第1導體層21相當於形成於上述介電體多層基板之一表面側之導體層,在本實施形態中係形成於介電層10之第1主面10a(在圖1及圖2中為上表面)之金屬層。第1導體層21作為天線元件100之放射元件而構成。The first conductive layer 21 corresponds to a conductive layer formed on one surface side of the dielectric multilayer substrate, and in this embodiment is a metal layer formed on the first main surface 10a (the upper surface in FIG. 1 and FIG. 2 ) of the dielectric layer 10. The first conductive layer 21 is configured as a radiating element of the antenna element 100.
第1導體層21係以較第2導體層22小之面積形成,形成為平面形狀例如矩形之平面元件形狀之平面圖案。平面元件形狀例如係指形成如貼片天線之放射元件之導體部之平面形狀(貼片形狀)。第1導體層21之大小(各邊之長度)並無特別限定,可根據使用之電波之頻帶任意設定,在本實施形態中沿著X軸方向之長邊21L之長度為約1.6 mm、沿著Y軸方向之短邊21S之長度為約1.0 mm。The first conductor layer 21 is formed with a smaller area than the second conductor layer 22, and is formed into a plane pattern of a plane shape, such as a rectangular plane element shape. The plane element shape refers to, for example, the plane shape (patch shape) of the conductor portion forming the radiating element such as a patch antenna. The size (length of each side) of the first conductor layer 21 is not particularly limited and can be arbitrarily set according to the frequency band of the radio wave used. In this embodiment, the length of the long side 21L along the X-axis direction is about 1.6 mm, and the length of the short side 21S along the Y-axis direction is about 1.0 mm.
再者,第1導體層21之平面形狀並不限於矩形,除了矩形以外之多角形以外,亦可為圓形或橢圓形、或組合該等之形狀。又,矩形之至少一部分(例如,邊或頂點)可變形為任意之形狀。Furthermore, the planar shape of the first conductive layer 21 is not limited to a rectangle, and may be a polygon other than a rectangle, a circle, an ellipse, or a combination of these shapes. Furthermore, at least a portion of the rectangle (e.g., a side or a vertex) may be deformed into any shape.
第2導體層22相當於形成於上述介電體多層基板之另一表面側之導體層,在本實施形態中係形成於介電層10之與第1主面10a為相反側之第2主面10b(圖1及圖2中為下表面)之金屬層。第2導體層22作為天線元件100之地導體板而構成。藉由電性連接於接地電位G,第2導體層22遍及介電層10之背面10b之全域而形成,當然並不限定於此。The second conductor layer 22 corresponds to a conductor layer formed on the other surface side of the above-mentioned dielectric multi-layer substrate, and in the present embodiment, is a metal layer formed on the second main surface 10b (the lower surface in FIG. 1 and FIG. 2 ) of the dielectric layer 10 which is opposite to the first main surface 10a. The second conductor layer 22 is configured as a ground conductor plate of the antenna element 100. The second conductor layer 22 is formed over the entire back surface 10b of the dielectric layer 10 by being electrically connected to the ground potential G, but it is of course not limited to this.
構成第1導體層21及第2導體層22之金屬並無特別限定,例如可舉出銅或鋁等。第1導體層21及第2導體層22之厚度並無特別限定,可以彼此相同之厚度形成,亦可以互不相同之厚度形成。The metal constituting the first conductive layer 21 and the second conductive layer 22 is not particularly limited, and examples thereof include copper and aluminum. The thickness of the first conductive layer 21 and the second conductive layer 22 is not particularly limited, and they may be formed to have the same thickness or different thicknesses.
第1層間連接部31將介電層10沿其厚度方向(Z軸方向)貫通,將第1導體層21向饋電部F連接。第1層間連接部31係與第1導體層21電性連接之圓柱狀之導電體,在本實施形態中由設置於介電層10之通孔電鍍或填充有導電材料之埋入導通孔形成。第2導體層22具有以較第1層間連接部31之外徑大之開口徑形成之開口部22a。第1層間連接部31藉由在與開口部22a之周緣部非接觸下收容於開口部22a內,而自第2導體層22電性絕緣。開口部22a與第1層間連接部31之間之環狀區域亦可由與介電層10相同之材料或與其不同之介電材料填充。The first interlayer connection portion 31 penetrates the dielectric layer 10 along the thickness direction (Z-axis direction) thereof and connects the first conductive layer 21 to the feeding portion F. The first interlayer connection portion 31 is a cylindrical conductive body electrically connected to the first conductive layer 21, and in the present embodiment is formed by a through-hole electroplating or a buried conductive hole filled with a conductive material provided in the dielectric layer 10. The second conductive layer 22 has an opening portion 22a formed with an opening diameter larger than the outer diameter of the first interlayer connection portion 31. The first interlayer connection portion 31 is electrically insulated from the second conductive layer 22 by being received in the opening portion 22a without contacting the peripheral portion of the opening portion 22a. The annular region between the opening 22a and the first inter-layer connecting portion 31 may also be filled with the same material as the dielectric layer 10 or a different dielectric material.
第2層間連接部32將介電層10沿其厚度方向(Z軸方向)貫通,將第1導體層21與第2導體層22之間電性連接。第2層間連接部32與第1層間連接部31同樣地係圓柱狀之導電體,在本實施形態中由設置於介電層10之通孔電鍍或以導電材料填充之埋入導通孔形成。第2層間連接部32與第1層間連接部31以同徑、同一高度形成。The second interlayer connection portion 32 penetrates the dielectric layer 10 along the thickness direction (Z-axis direction) thereof, and electrically connects the first conductive layer 21 and the second conductive layer 22. The second interlayer connection portion 32 is a cylindrical conductive body similar to the first interlayer connection portion 31, and in this embodiment, is formed by a through-hole electroplating or buried via filled with a conductive material provided in the dielectric layer 10. The second interlayer connection portion 32 is formed with the same diameter and height as the first interlayer connection portion 31.
第1層間連接部31及第2層間連接部32相對於第1導體層21垂直連接。因此第1層間連接部31及第2層間連接部32之長度(高度)相當於介電層10之厚度(0.65 mm)。第1導體層21如圖1所示般,具有連接有第1層間連接部31之第1區域211、及連接有第2層間連接部32之第2區域212。第1區域211及第2區域212皆為第1導體層21之面內,與第1導體層21之周緣部分開配置。The first interlayer connection portion 31 and the second interlayer connection portion 32 are connected vertically relative to the first conductive layer 21. Therefore, the length (height) of the first interlayer connection portion 31 and the second interlayer connection portion 32 is equivalent to the thickness (0.65 mm) of the dielectric layer 10. As shown in FIG. 1 , the first conductive layer 21 has a first region 211 connected to the first interlayer connection portion 31 and a second region 212 connected to the second interlayer connection portion 32. The first region 211 and the second region 212 are both in the plane of the first conductive layer 21 and are arranged separately from the peripheral portion of the first conductive layer 21.
在本實施形態中,第1區域211與第2區域212在就第1導體層21之中心對稱之位置,沿與長邊21L平行之方向(X軸方向)配置。並不限於此,第1區域211與第2區域212亦可如後述般沿和與長邊21L平行之方向(X軸方向)交叉之方向配置(參照圖38)。In the present embodiment, the first region 211 and the second region 212 are arranged in a direction parallel to the long side 21L (X-axis direction) at positions symmetrical with respect to the center of the first conductive layer 21. However, the present invention is not limited thereto, and the first region 211 and the second region 212 may be arranged in a direction intersecting the direction parallel to the long side 21L (X-axis direction) as described later (see FIG. 38 ).
如以上般構成之本實施形態之天線元件100,藉由第1導體層21、第1層間連接部31及第2層間連接部32,作為具有與寬度方向(Y軸方向)平行之軸心之環形天線而構成。The antenna element 100 of the present embodiment constructed as described above is configured as a ring antenna having an axis parallel to the width direction (Y-axis direction) by the first conductive layer 21, the first inter-layer connecting portion 31, and the second inter-layer connecting portion 32.
本實施形態之天線元件100以使用之電波之頻帶成為60 GHz(例如,57 GHz~64 GHz)之方式設定第1導體層21之各邊(長邊21L、短邊21S)之長度。即,因第1導體層21形成為較層間連接部31、32之軸徑及配置間隔大之長度及寬度之平面元件形狀,故電流密度集中於第1導體層21之周緣部,因此,可藉由第1導體層21之各邊之長度之設定而謀求分數頻帶之增加。The antenna element 100 of this embodiment sets the length of each side (long side 21L, short side 21S) of the first conductor layer 21 so that the frequency band of the radio wave used is 60 GHz (for example, 57 GHz to 64 GHz). That is, since the first conductor layer 21 is formed into a planar element shape with a length and width larger than the axial diameter and arrangement interval of the interlayer connecting parts 31 and 32, the current density is concentrated on the periphery of the first conductor layer 21. Therefore, the fractional frequency band can be increased by setting the length of each side of the first conductor layer 21.
又,藉由第1層間連接部31、第2層間連接部32、第1導體層21形成之迴路長度(包含因介電層10之介電常數引起之波長縮短之實效長度)以成為使用之電波之1波長以下,更佳的是成為相當於該電波之半波長之大小之方式設定。在本實施形態中,將上述實效長度設為2.477 mm,且相當於60 GHz之電波之半波長之大小。Furthermore, the loop length formed by the first interlayer connection portion 31, the second interlayer connection portion 32, and the first conductive layer 21 (including the effective length due to wavelength shortening caused by the dielectric constant of the dielectric layer 10) is set to be less than 1 wavelength of the radio wave used, and more preferably, to be equal to half the wavelength of the radio wave. In this embodiment, the above-mentioned effective length is set to 2.477 mm, which is equal to half the wavelength of a 60 GHz radio wave.
根據本實施形態之天線元件100,因具有包含與迴路長度對應之諧振頻率及與第1導體層21之周長對應之諧振頻率之複數個諧振頻率,故可增加藉由單一元件可覆蓋之分數頻帶(帶寬除以中心頻率而得之值)。The antenna element 100 according to this embodiment has a plurality of resonant frequencies including a resonant frequency corresponding to the loop length and a resonant frequency corresponding to the perimeter of the first conductor layer 21, so that the fractional band (the value obtained by dividing the bandwidth by the center frequency) that can be covered by a single element can be increased.
圖3係顯示天線元件100之電壓駐波比(VSWR:Voltage Standing Wave Ratio)之一例之模擬結果。圖4係顯示天線元件100之60 GHz之方位角平面(XZ平面)之放射特性之模擬結果,圖5係顯示天線元件100之60 GHz之仰角平面(YZ平面)之放射特性之模擬結果。在圖4及圖5中0゚方向(上方向)相當於頂面方向(+Z方向)。FIG3 shows an example of simulation results of the voltage standing wave ratio (VSWR) of the antenna element 100. FIG4 shows the simulation results of the radiation characteristics of the azimuth plane (XZ plane) at 60 GHz of the antenna element 100, and FIG5 shows the simulation results of the radiation characteristics of the elevation plane (YZ plane) at 60 GHz of the antenna element 100. In FIG4 and FIG5, the 0゚ direction (upward direction) is equivalent to the top surface direction (+Z direction).
如圖3所示般VSWR比為1.5以下之頻帶為59 GHz~67 GHz,分數頻帶為12.7%。又,如圖4及圖5所示般,獲得向頂面方向廣範圍且平衡性佳之指向特性。As shown in Figure 3, the frequency band where the VSWR ratio is less than 1.5 is 59 GHz to 67 GHz, and the fractional band is 12.7%. Also, as shown in Figures 4 and 5, a directional characteristic with a wide range and good balance in the top direction is obtained.
如以上般,根據本實施形態,雖然為單一元件構造但可獲得遍及寬頻諧振之天線特性。As described above, according to this embodiment, although it is a single-element structure, an antenna characteristic with wide-band resonance can be obtained.
[比較例] 接著,對於本實施形態之天線元件100之放射特性,與以下說明之比較例1、2之天線構造進行比較而說明。 [Comparative Example] Next, the radiation characteristics of the antenna element 100 of this embodiment will be described by comparing it with the antenna structures of Comparative Examples 1 and 2 described below.
(比較例1) 圖6係比較例1之天線元件101之透過立體圖,圖7係其側剖視圖。該天線元件101顯示背面饋電型之貼片天線之代表性之構造。 (Comparative Example 1) Figure 6 is a perspective view of the antenna element 101 of Comparative Example 1, and Figure 7 is a side cross-sectional view thereof. The antenna element 101 shows a representative structure of a back-fed chip antenna.
即,天線元件101包含:介電層110;形成於介電層110之表面之作為放射元件之第1導體層121、形成於介電層110之背面之作為地導體板之第2導體層122、及貫通介電層110將第1導體層121連接於饋電點之層間連接部131。層間連接部131與第2導體層122電性絕緣。此處,將第1導體層121之形狀設為長邊為1.2 mm、短邊為1.0 mm之矩形。That is, the antenna element 101 includes: a dielectric layer 110; a first conductive layer 121 as a radiation element formed on the surface of the dielectric layer 110, a second conductive layer 122 as a ground conductive plate formed on the back of the dielectric layer 110, and an interlayer connection portion 131 that penetrates the dielectric layer 110 and connects the first conductive layer 121 to a feeding point. The interlayer connection portion 131 is electrically insulated from the second conductive layer 122. Here, the shape of the first conductive layer 121 is set to be a rectangle with a long side of 1.2 mm and a short side of 1.0 mm.
圖8係顯示天線元件101之電壓駐波比(VSWR)之一例之模擬結果。圖9係顯示天線元件101之60 GHz之方位角平面(XZ平面)之放射特性之模擬結果,圖10係顯示天線元件101之60 GHz之仰角平面(YZ平面)之放射特性之模擬結果。在圖9及圖10中0゚方向(上方向)相當於頂面方向(+Z方向)。FIG8 is a simulation result showing an example of the voltage-sense-wave ratio (VSWR) of the antenna element 101. FIG9 is a simulation result showing the radiation characteristics of the azimuth plane (XZ plane) at 60 GHz of the antenna element 101, and FIG10 is a simulation result showing the radiation characteristics of the elevation plane (YZ plane) at 60 GHz of the antenna element 101. In FIG9 and FIG10, the 0゚ direction (upward direction) is equivalent to the top direction (+Z direction).
如圖8所示般,在比較例1之天線元件101中,VSWR比為1.5以下之頻帶為57 GHz~61 GHz,分數頻帶為6.7%。相對於此,根據本實施形態之天線元件100,因如上述般分數頻帶為12.7%(參照圖3),與比較例1相比可使分數頻帶增加約2倍。由此與比較例1之天線元件101相比,可實現頻帶之寬頻化。As shown in FIG8 , in the antenna element 101 of Comparative Example 1, the frequency band in which the VSWR ratio is 1.5 or less is 57 GHz to 61 GHz, and the fractional frequency band is 6.7%. In contrast, the antenna element 100 according to the present embodiment has a fractional frequency band of 12.7% as described above (see FIG3 ), and the fractional frequency band can be increased by about 2 times compared to Comparative Example 1. Thus, a wider frequency band can be achieved compared to the antenna element 101 of Comparative Example 1.
再者,關於天線指向性,為與圖9及圖10所示之比較例1之天線元件101大致同等之特性。基於該情形,根據本實施形態,可具有與貼片天線構造同等之天線指向性,且可謀求頻帶之擴大。Furthermore, regarding the antenna directivity, it is substantially the same as the antenna element 101 of Comparative Example 1 shown in Figures 9 and 10. Based on this, according to this embodiment, it is possible to have the antenna directivity equivalent to that of the patch antenna structure and to expand the frequency band.
(比較例2) 圖11係比較例2之天線元件102之立體圖,圖12係其側視圖。該天線元件102包含相對於地導體板124形成為垂直之環形狀之天線構造體123。天線構造體之一端連接於饋電點,另一端連接於地導體板124。迴路長度設為相當於60 GHz之電波之半波長之大小。 (Comparative Example 2) Figure 11 is a perspective view of the antenna element 102 of Comparative Example 2, and Figure 12 is a side view thereof. The antenna element 102 includes an antenna structure 123 formed in a vertical ring shape relative to a ground conductor plate 124. One end of the antenna structure is connected to a feeding point, and the other end is connected to the ground conductor plate 124. The loop length is set to be equivalent to the half-wavelength of a 60 GHz radio wave.
圖13係顯示天線元件102之電壓駐波比(VSWR)之一例之模擬結果。圖14係顯示天線元件102之60 GHz之方位角平面(XZ平面)之放射特性之模擬結果,圖15係顯示天線元件102之60 GHz之仰角平面(YZ平面)之放射特性之模擬結果。在圖14及圖15中,0゚方向(上方向)相當於頂面方向(+Z方向)。FIG13 is a simulation result showing an example of the voltage-sense-wave ratio (VSWR) of the antenna element 102. FIG14 is a simulation result showing the radiation characteristics of the azimuth plane (XZ plane) at 60 GHz of the antenna element 102, and FIG15 is a simulation result showing the radiation characteristics of the elevation plane (YZ plane) at 60 GHz of the antenna element 102. In FIG14 and FIG15, the 0゚ direction (upward direction) is equivalent to the top direction (+Z direction).
如圖13所示般,在比較例2之天線元件102中,VSWR比為1.5以下之頻帶為58 GHz~60 GHz,分數頻帶為6.6%。相對於此,根據本實施形態之天線元件100,因如上述般分數頻帶為12.7%(參照圖3),與比較例2相比可使分數頻帶增加約2倍。藉此與比較例1之天線元件101相比可實現頻帶之寬頻化。As shown in FIG13 , in the antenna element 102 of Comparative Example 2, the frequency band in which the VSWR ratio is 1.5 or less is 58 GHz to 60 GHz, and the fractional frequency band is 6.6%. In contrast, the antenna element 100 according to the present embodiment has a fractional frequency band of 12.7% (see FIG3 ) as described above, and the fractional frequency band can be increased by about 2 times compared to Comparative Example 2. Thus, a wider frequency band can be achieved compared to the antenna element 101 of Comparative Example 1.
又,關於指向性,與比較例1不同,成為如偶極天線之8字型之特性,可謂不適合在毫米波區域中使用之向放射面(頂面)之指向性天線之構造。基於該情形,根據本實施形態,與代表性之環形天線構造相比,可實現向頂面方向廣範圍且平衡性佳之指向特性,且可謀求頻帶之寬頻化。In addition, regarding directivity, unlike Comparative Example 1, it has a figure-8 characteristic like a dipole antenna, which is not suitable for a directional antenna structure toward the radiation plane (ceiling) used in the millimeter wave region. Based on this situation, according to this embodiment, compared with the representative ring antenna structure, a directional characteristic with a wide range and good balance toward the ceiling direction can be achieved, and a wider bandwidth can be sought.
圖16係對本實施形態之天線元件100與比較例1之天線元件101之天線特性及指向性進行比較之模擬結果。此處,將各元件在60 GHz之諧振頻率下以相同之尺寸形成,以5 GHz間隔測定直至50~65 GHz之天線特性及指向性。Fig. 16 is a simulation result comparing the antenna characteristics and directivity of the antenna element 100 of the present embodiment and the antenna element 101 of Comparative Example 1. Here, each element is formed with the same size at a resonance frequency of 60 GHz, and the antenna characteristics and directivity up to 50 to 65 GHz are measured at 5 GHz intervals.
如圖16所示般,本實施形態之天線元件100獲得與比較例1之天線元件101相同之指向特性。另一方面,根據本實施形態,獲得在55 GHz~65 GHz中頂面方向之天線增益超過比較例1之結果。 到目前為止,為了將天線寬頻化・高增益化而使用將天線元件設為需要複數個之陣列形狀、或增加積層基板之層數且於中間追加反射・寬頻化之圖案等之手法,但根據本實施形態可以廉價且簡單之手法實現寬頻化。 As shown in FIG. 16 , the antenna element 100 of the present embodiment obtains the same directional characteristics as the antenna element 101 of Comparative Example 1. On the other hand, according to the present embodiment, the antenna gain in the top direction in the range of 55 GHz to 65 GHz is higher than that of Comparative Example 1. Until now, in order to increase the bandwidth and gain of the antenna, a method has been used such as setting the antenna element to an array shape requiring multiple elements, or increasing the number of layers of the multilayer substrate and adding a reflection and broadband pattern in the middle, but according to the present embodiment, broadbandization can be achieved by a cheap and simple method.
<第2實施形態> 圖17係本技術之第2實施形態之天線模組300之透過立體圖,圖18係其平面圖,圖19係顯示天線模組300之電路構成之方塊圖。再者,在圖中,對於與上述之第1實施形態對應之部分賦予同一符號,且省略其說明。 <Second Implementation> Figure 17 is a perspective view of the antenna module 300 of the second implementation of the present technology, Figure 18 is a plan view thereof, and Figure 19 is a block diagram showing the circuit structure of the antenna module 300. In addition, in the figure, the same symbols are given to the parts corresponding to the first implementation described above, and their descriptions are omitted.
本實施形態之天線模組300包含天線陣列200、及信號處理電路301(圖19)。天線陣列200及信號處理電路301形成或搭載於共通之介電體多層基板1。The antenna module 300 of this embodiment includes an antenna array 200 and a signal processing circuit 301 ( FIG. 19 ). The antenna array 200 and the signal processing circuit 301 are formed or mounted on a common dielectric multi-layer substrate 1 .
[天線陣列] 天線陣列200具有複數個天線元件100。複數個天線元件100包含1個發送天線Tx、及3個接收天線Rx1、Rx2、Rx3。各天線元件100具有同一構成,與第1實施形態中說明之天線元件相同地構成。發送天線並不限於1個,亦可為2個以上。又,接收天線並不限於3個,亦可為2個或4個以上。 [Antenna array] The antenna array 200 has a plurality of antenna elements 100. The plurality of antenna elements 100 include a transmitting antenna Tx and three receiving antennas Rx1, Rx2, and Rx3. Each antenna element 100 has the same structure and is configured in the same manner as the antenna element described in the first embodiment. The number of transmitting antennas is not limited to one, but may be two or more. In addition, the number of receiving antennas is not limited to three, but may be two or four or more.
各天線元件100之第1導體層21各自獨立地排列於介電層10之第1主面10a上。各第1導體層21形成為相同之平面元件形狀,在本實施形態中,形成為分別在X軸方向具有長邊、在Y軸方向具有短邊之大致矩形。該等各天線元件100如圖18所示般,在介電層10之第1主面10a上沿著X軸方向及Y軸方向矩陣狀排列。The first conductor layers 21 of each antenna element 100 are independently arranged on the first main surface 10a of the dielectric layer 10. Each first conductor layer 21 is formed into the same planar element shape, and in the present embodiment, is formed into a substantially rectangular shape having long sides in the X-axis direction and short sides in the Y-axis direction. As shown in FIG. 18 , the antenna elements 100 are arranged in a matrix along the X-axis direction and the Y-axis direction on the first main surface 10a of the dielectric layer 10.
另一方面,各天線元件100之第2導體層22由連接於接地電位之共通之導體層形成。於第2導體層22,藉由在各天線元件100之第1層間連接部31之形成區域設置開口部22a,而第2導體層22與各第1層間連接部31之間被電性絕緣。各天線元件100之第1層間連接部31經由形成於介電層10之第2主面10b之未圖示之信號傳送線連接於信號處理電路301。作為信號傳送線,可採用微帶線線路、帶狀線線路、共面波導線路等各種信號線路。On the other hand, the second conductor layer 22 of each antenna element 100 is formed of a common conductor layer connected to the ground potential. In the second conductor layer 22, by providing an opening 22a in the formation area of the first inter-layer connection portion 31 of each antenna element 100, the second conductor layer 22 and each first inter-layer connection portion 31 are electrically insulated. The first inter-layer connection portion 31 of each antenna element 100 is connected to the signal processing circuit 301 via a signal transmission line (not shown) formed on the second main surface 10b of the dielectric layer 10. As the signal transmission line, various signal lines such as a microstrip line, a stripline line, and a coplanar waveguide line can be used.
[信號處理電路] 信號處理電路301係產生向發送天線Tx發送之毫米波信號、且處理由接收天線Rx1~Rx3接收之毫米波信號並算出到達角之毫米波雷達IC,相當於饋電部。於介電體多層基板1,如圖19所示般進一步搭載有:調整向信號處理電路301供給之電壓之調壓器302、儲存信號處理電路301之驅動用參數等之記憶體303、用於將該等信號處理電路、調壓器302及記憶體303與未圖示之外部裝置電性連接之連接器304等。 [Signal processing circuit] The signal processing circuit 301 is a millimeter wave radar IC that generates a millimeter wave signal to be transmitted to the transmitting antenna Tx, processes the millimeter wave signal received by the receiving antennas Rx1 to Rx3, and calculates the arrival angle, which is equivalent to the feeding part. On the dielectric multilayer substrate 1, as shown in FIG. 19, there are further mounted: a voltage regulator 302 for adjusting the voltage supplied to the signal processing circuit 301, a memory 303 for storing driving parameters of the signal processing circuit 301, and a connector 304 for electrically connecting the signal processing circuit, the voltage regulator 302, and the memory 303 to an external device not shown in the figure.
本實施形態之天線模組300作為MIMO(Multi Input Multi Output,多輸入多輸出)雷達天線而構成。根據本實施形態,因在同一基板上搭載有發送用及接收用之各天線,故獲得與上述之第1實施形態相同之作用效果,且可謀求天線裝置之小型化及薄型化。The antenna module 300 of this embodiment is configured as a MIMO (Multi Input Multi Output) radar antenna. According to this embodiment, since the transmitting and receiving antennas are mounted on the same substrate, the same effects as those of the first embodiment described above are obtained, and the antenna device can be made smaller and thinner.
[隔離度特性之改善] 如上述般構成天線陣列200之各天線元件100之第1導體層21具有含有與X軸方向平行之長邊、及與Y軸方向平行之短邊之矩形之平面形狀。因此,於在正方形狀之介電層10之第1主面10a上排列各天線元件100之情形下,與沿Y軸方向相鄰之天線元件100之間隔相比,沿X軸方向相鄰之天線元件100之間隔變小。 [Improvement of Isolation Characteristics] As described above, the first conductor layer 21 of each antenna element 100 constituting the antenna array 200 has a rectangular plane shape having a long side parallel to the X-axis direction and a short side parallel to the Y-axis direction. Therefore, when the antenna elements 100 are arranged on the first main surface 10a of the square-shaped dielectric layer 10, the interval between the antenna elements 100 adjacent to each other along the X-axis direction becomes smaller than the interval between the antenna elements 100 adjacent to each other along the Y-axis direction.
因此,在本實施形態中,在沿X軸方向排列之2個第1導體層21之相互對向之短邊21s,設置將該等2個第1導體層21之間隔局部擴張之缺口部210。藉此,例如與如圖20所示般不具備缺口部210之天線陣列200相比,可改善沿X軸方向相鄰之2個天線元件100間(發送天線Tx與接收天線Rx1之間、及2個接收天線Rx2、Rx3之間)之隔離度特性。Therefore, in the present embodiment, a notch 210 for partially expanding the interval between the two first conductive layers 21 is provided on the short sides 21s facing each other of the two first conductive layers 21 arranged along the X-axis direction. Thus, the isolation characteristics between two antenna elements 100 adjacent to each other along the X-axis direction (between the transmitting antenna Tx and the receiving antenna Rx1, and between the two receiving antennas Rx2 and Rx3) can be improved compared to the antenna array 200 without the notch 210 as shown in FIG. 20, for example.
缺口部210之形狀並無特別限定,在本實施形態中形成為圓弧狀。除此以外亦可如圖27所示般,缺口部210可形成為三角形,亦可形成為矩形或梯形。如此般藉由將缺口部210設置於第1導體層21之短邊21S之一部分,可防止第1導體層21之周長大幅變化。藉此,可確保寬頻化且謀求隔離度特性之改善。The shape of the notch 210 is not particularly limited, and in this embodiment, it is formed into an arc shape. In addition, as shown in FIG. 27 , the notch 210 may be formed into a triangle, a rectangle, or a trapezoid. By providing the notch 210 at a portion of the short side 21S of the first conductive layer 21, it is possible to prevent the perimeter of the first conductive layer 21 from changing significantly. In this way, broadband can be ensured and the isolation characteristics can be improved.
圖21係顯示相對於發送天線Tx之接收天線Rx1之隔離度特性之模擬結果。圖中實線表示具有缺口部210(以下,亦稱為有隔離度處理)時之特性,虛線表示無缺口部210 (以下,亦稱為無隔離度處理)時之特性。如該圖所示般,在有隔離度處理之情形下,與無隔離度處理之情形相比,可看到約1 dB之改善。FIG21 shows the simulation result of the isolation characteristic of the receiving antenna Rx1 relative to the transmitting antenna Tx. The solid line in the figure shows the characteristic when there is a notch 210 (hereinafter, also referred to as isolation treatment), and the dotted line shows the characteristic when there is no notch 210 (hereinafter, also referred to as no isolation treatment). As shown in the figure, in the case of isolation treatment, an improvement of about 1 dB can be seen compared to the case of no isolation treatment.
圖22係顯示相對於發送天線Tx之接收天線Rx2之隔離度特性之模擬結果。圖中實線表示有隔離度處理時之特性,虛線表示無隔離度處理時之特性。如該圖所示般,在該實驗中,在有隔離度處理之情形與無隔離度處理之情形下,未見較大之差。此被認為緣於發送天線Tx與接收天線Rx2相互處於對角關係之位置,實體距離較大。Figure 22 shows the simulation results of the isolation characteristics of the receiving antenna Rx2 relative to the transmitting antenna Tx. The solid line in the figure represents the characteristics when the isolation is processed, and the dotted line represents the characteristics when the isolation is not processed. As shown in the figure, in the experiment, there is no significant difference between the case with isolation processing and the case without isolation processing. This is believed to be due to the fact that the transmitting antenna Tx and the receiving antenna Rx2 are located at a diagonal position with respect to each other, and the physical distance is relatively large.
圖23係顯示相對於發送天線Tx之接收天線Rx3之隔離度特性之模擬結果。圖中實線表示有隔離度處理時之特性,虛線表示無隔離度處理時之特性。如該圖所示般,有隔離度處理之情形與無隔離度處理之情形相比,在60 GHz~64 GHz之頻帶中可見大幅之改善。此被認為緣於雖然因發送天線Tx與接收天線Rx3因第1導體層21之長邊相互對向故無因缺口部210之形成所致之影響,但因第1導體層21之周緣部之電流密度高,故藉由缺口部210之形狀效果獲得如特定頻率中之濾波器之功能。FIG23 shows the simulation results of the isolation characteristics of the receiving antenna Rx3 relative to the transmitting antenna Tx. The solid line in the figure represents the characteristics when the isolation treatment is applied, and the dotted line represents the characteristics when the isolation treatment is not applied. As shown in the figure, a significant improvement can be seen in the frequency band of 60 GHz to 64 GHz compared to the case without the isolation treatment. This is believed to be because although the transmitting antenna Tx and the receiving antenna Rx3 are not affected by the formation of the notch 210 because the long sides of the first conductive layer 21 face each other, the current density in the peripheral portion of the first conductive layer 21 is high, so the shape effect of the notch 210 achieves a function like a filter at a specific frequency.
圖24係顯示接收天線Rx2與接收天線Rx3之間之隔離度特性之模擬結果。圖中實線表示有隔離度處理時之特性,虛線表示無隔離度處理時之特性。如該圖所示般,在有隔離度處理之情形下,與無隔離度處理之情形相比,可看到約2 dB之改善。Figure 24 shows the simulation results of the isolation characteristics between the receiving antenna Rx2 and the receiving antenna Rx3. The solid line in the figure shows the characteristics when the isolation processing is performed, and the dotted line shows the characteristics when the isolation processing is not performed. As shown in the figure, in the case of the isolation processing, an improvement of about 2 dB can be seen compared to the case of the non-isolation processing.
圖25係顯示接收天線Rx1與接收天線Rx3之間之隔離度特性之模擬結果。圖中實線表示有隔離度處理時之特性,虛線表示無隔離度處理時之特性。如該圖所示般,在該實驗中,在有隔離度處理之情形與無有隔離度處理之情形下,未見較大之差。此被認為緣於接收天線Rx1與接收天線Rx3相互處於對角關係之位置,實體距離較大。FIG25 shows the simulation result of the isolation characteristics between the receiving antenna Rx1 and the receiving antenna Rx3. The solid line in the figure represents the characteristics when the isolation is processed, and the dotted line represents the characteristics when the isolation is not processed. As shown in the figure, in the experiment, there is no significant difference between the case where the isolation is processed and the case where the isolation is not processed. This is believed to be due to the fact that the receiving antenna Rx1 and the receiving antenna Rx3 are located at a diagonal position with respect to each other, and the physical distance is relatively large.
圖26係顯示接收天線Rx1與接收天線Rx2之間之隔離度特性之模擬結果。圖中實線表示有隔離度處理時之特性,虛線表示無隔離度處理時之特性。如該圖所示般,有隔離度處理之情形與無隔離度處理之情形相比,在60 GHz~64 GHz之頻帶中可見大幅之改善。此與圖23所示之結果同樣地,被認為緣於藉由缺口部210之形狀效果獲得如特定頻率中之濾波器之功能。FIG26 shows the simulation result of the isolation characteristics between the receiving antenna Rx1 and the receiving antenna Rx2. The solid line in the figure represents the characteristics when the isolation processing is performed, and the dotted line represents the characteristics when the isolation processing is not performed. As shown in the figure, a significant improvement can be seen in the frequency band of 60 GHz to 64 GHz compared with the case without the isolation processing. This is similar to the result shown in FIG23, and it is believed that the function of a filter in a specific frequency is obtained by the shape effect of the notch 210.
<第3實施形態> [天線元件之又一構成例] 接著,對於本技術之天線元件之又一構成例進行說明。再者,在各圖中對於與圖1對應之部分賦予同一符號,且省略其詳細之說明。 <Third embodiment> [Another configuration example of antenna element] Next, another configuration example of the antenna element of the present technology is described. In each figure, the same symbol is given to the part corresponding to Figure 1, and its detailed description is omitted.
圖28所示之天線元件151,在作為放射元件之第1導體層21與作為地導體板之第2導體層22以相同之面積形成之點上,與圖1所示之天線元件100相異。此處,將第1導體層21及第2導體層22之各邊之長度分別設為3 mm。The antenna element 151 shown in FIG28 is different from the antenna element 100 shown in FIG1 in that the first conductor layer 21 as a radiating element and the second conductor layer 22 as a ground conductor plate are formed with the same area. Here, the length of each side of the first conductor layer 21 and the second conductor layer 22 is set to 3 mm respectively.
圖29係顯示天線元件151之電壓駐波比(VSWR)特性、與60 GHz之方位角平面(XZ平面)及仰角平面(YZ平面)之放射特性之模擬結果。如該圖所示般,因第1導體層21之面積過大而諧振狀態變化,作為60 GHz頻帶用之天線難以成立。因此,需要第1導體層21例如以至少較第2導體層22小之面積形成,較佳的是根據使用頻帶謀求第1導體層21之周長之最佳化。FIG29 shows the simulation results of the voltage-stationary-wave ratio (VSWR) characteristics of the antenna element 151 and the radiation characteristics of the azimuth plane (XZ plane) and elevation plane (YZ plane) at 60 GHz. As shown in the figure, since the area of the first conductor layer 21 is too large, the resonance state changes, and it is difficult to establish an antenna for the 60 GHz band. Therefore, the first conductor layer 21 needs to be formed with an area at least smaller than the second conductor layer 22, and it is better to optimize the perimeter of the first conductor layer 21 according to the frequency band used.
圖30所示之天線元件152在如下之點上與圖1所示之天線元件100相異:在自Z軸方向觀察時,形成為作為放射元件之第1導體層21之周緣部(長邊及短邊)與第1層間連接部31(第1區域211)及第2層間連接部32(第2區域212)之外周部相接之帶狀。此處,將第1導體層21之短邊之長度設為0.3 mm,將長邊之長度設為1.1 mm。The antenna element 152 shown in FIG30 is different from the antenna element 100 shown in FIG1 in that, when viewed from the Z-axis direction, the peripheral portion (long side and short side) of the first conductor layer 21 as a radiating element is formed into a strip shape in which the peripheral portion (long side and short side) of the first inter-layer connecting portion 31 (first region 211) and the outer peripheral portion of the second inter-layer connecting portion 32 (second region 212) are connected. Here, the length of the short side of the first conductor layer 21 is set to 0.3 mm, and the length of the long side is set to 1.1 mm.
圖31係顯示天線元件152之電壓駐波比(VSWR)特性、與60 GHz之方位角平面(XZ平面)及仰角平面(YZ平面)之放射特性之模擬結果。如該圖所示般,雖然在60 GHz頻帶中產生諧振,但天線之放射特性保持環形天線之指向性之原樣不變。FIG31 shows the simulation results of the voltage-sense-wave ratio (VSWR) characteristics of the antenna element 152 and the radiation characteristics in the azimuth plane (XZ plane) and elevation plane (YZ plane) at 60 GHz. As shown in the figure, although resonance occurs in the 60 GHz band, the radiation characteristics of the antenna maintain the directivity of the loop antenna.
另一方面,圖32所示之天線元件153在如下之點上與圖30所示之天線元件152相異:在自Z軸方向觀察時,形成為較作為放射元件之較第1導體層21之周緣部(長邊及短邊)靠內側位在有第1層間連接部31(第1區域211)與第2層間連接部32(第2區域212)之外周部之帶狀。此處,將第1導體層21之短邊之長度設為0.5 mm,將長邊之長度設為1.3 mm。On the other hand, the antenna element 153 shown in FIG32 is different from the antenna element 152 shown in FIG30 in that, when viewed from the Z-axis direction, it is formed in a strip shape located at the outer periphery of the first interlayer connecting portion 31 (first region 211) and the second interlayer connecting portion 32 (second region 212) on the inner side of the periphery (long side and short side) of the first conductor layer 21 as a radiating element. Here, the length of the short side of the first conductor layer 21 is set to 0.5 mm, and the length of the long side is set to 1.3 mm.
圖33係顯示天線元件153之電壓駐波比(VSWR)特性、與60 GHz之方位角平面(XZ平面)及仰角平面(YZ平面)之放射特性之模擬結果。如該圖所示般,頻帶以60 Ghz頻帶為中心而開始擴展, 作為天線而向頂面之放射特性亦變大。FIG33 shows the simulation results of the voltage-situation-wave-ratio (VSWR) characteristics and the radiation characteristics in the azimuth plane (XZ plane) and elevation plane (YZ plane) at 60 GHz of the antenna element 153. As shown in the figure, the frequency band starts to expand with the 60 GHz frequency band as the center, and the radiation characteristics toward the top surface of the antenna also become larger.
又,圖34所示之天線元件154,在將作為放射元件之第1導體層21之短邊之長度設為1.0 mm、將長邊之長度設為1.3 mm之點上,與圖32所示之天線元件153相異。Furthermore, the antenna element 154 shown in FIG. 34 is different from the antenna element 153 shown in FIG. 32 in that the length of the short side of the first conductor layer 21 as a radiating element is set to 1.0 mm and the length of the long side is set to 1.3 mm.
圖35係顯示天線元件154之電壓駐波比(VSWR)特性、與60 GHz之方位角平面(XZ平面)及仰角平面(YZ平面)之放射特性之模擬結果。如該圖所示般,可知頻帶進一步擴展,天線之放射圖案向頂面方向不斷被最佳化。FIG35 shows the simulation results of the voltage-situation-wave-ratio (VSWR) characteristics of the antenna element 154 and the radiation characteristics in the azimuth plane (XZ plane) and elevation plane (YZ plane) at 60 GHz. As shown in the figure, it can be seen that as the frequency band is further expanded, the radiation pattern of the antenna is continuously optimized toward the top plane direction.
進而,圖36所示之天線元件155在將作為放射元件之第1導體層21之短邊之長度設為0.5 mm、將長邊之長度設為1.6 mm之點上,與圖34所示之天線元件154相異。Furthermore, the antenna element 155 shown in FIG. 36 is different from the antenna element 154 shown in FIG. 34 in that the length of the short side of the first conductor layer 21 as a radiating element is set to 0.5 mm and the length of the long side is set to 1.6 mm.
圖37係顯示天線元件155之電壓駐波比(VSWR)特性、與60 GHz之方位角平面(XZ平面)及仰角平面(YZ平面)之放射特性之模擬結果。如該圖所示般,可知向Y軸方向亦同樣地產生複數諧振而頻帶更擴展,天線之放射圖案亦對於頂面不斷變強。Figure 37 shows the voltage-stationary-wave ratio (VSWR) characteristics of the antenna element 155 and the simulation results of the radiation characteristics in the azimuth plane (XZ plane) and elevation plane (YZ plane) at 60 GHz. As shown in the figure, complex resonance is also generated in the Y-axis direction, and the frequency band is further expanded, and the radiation pattern of the antenna becomes stronger toward the top surface.
且,圖38所示之2個天線元件156在連接於作為放射元件之第1導體層21的第1層間連接部31及第2層間連接部32沿和與長邊平行之方向(X軸方向)交叉之方向配置之點上,與圖1所示之天線元件100相異。此處,顯示第2層間連接部32配置於第1導體層21之角隅部之例。Furthermore, the two antenna elements 156 shown in FIG38 are different from the antenna element 100 shown in FIG1 in that the first interlayer connection portion 31 and the second interlayer connection portion 32 connected to the first conductive layer 21 as a radiating element are arranged in a direction intersecting the direction parallel to the long side (X-axis direction). Here, an example is shown in which the second interlayer connection portion 32 is arranged at a corner portion of the first conductive layer 21.
圖39係顯示天線元件156之電壓駐波比(VSWR)特性、與60 GHz之方位角平面(XZ平面)及仰角平面(YZ平面)之放射特性之模擬結果。如該圖所示般,因獲得與圖1所示之天線元件100之VSWR特性(圖3)及放射特性(圖4、圖5)相同之模擬結果,故在本構成例中亦獲得與第1實施形態相同之作用效果。FIG39 shows the simulation results of the voltage-stationary-wave ratio (VSWR) characteristics and the radiation characteristics in the azimuth plane (XZ plane) and elevation plane (YZ plane) at 60 GHz of the antenna element 156. As shown in the figure, since the same simulation results as the VSWR characteristics (FIG. 3) and radiation characteristics (FIG. 4 and FIG. 5) of the antenna element 100 shown in FIG1 are obtained, the same effects as those of the first embodiment are obtained in this configuration example.
<第4實施形態> [隔離度特性之改善之又一例] 接著,對於本技術之第4實施形態進行說明。在該第4實施形態中,對於改善上述之第2實施形態中說明之隔離度特性之形態之又一例進行說明。 <Fourth Implementation Form> [Another Example of Improving Isolation Characteristics] Next, the fourth implementation form of the present technology is described. In the fourth implementation form, another example of improving the isolation characteristics described in the second implementation form is described.
此處,在上述之第2實施形態中,對於藉由在各第1導體層21,於在X軸方向上相互對向之短邊設置缺口部210,而改善隔離度特性之方法進行了說明。另一方面,在第4實施形態中,除了缺口部210以外,藉由進一步施加基於其他觀點之改善,而進一步改善隔離度特性。Here, in the second embodiment described above, a method for improving the isolation characteristics by providing the notch portion 210 on the short sides facing each other in the X-axis direction in each first conductive layer 21 is described. On the other hand, in the fourth embodiment, in addition to the notch portion 210, improvements based on other viewpoints are further applied to further improve the isolation characteristics.
在此處之說明中,首先,對於與上述之第2實施形態對應之形態舉出一例進行說明。圖40係顯示與上述之第2實施形態對應之天線模組300之一例之圖。In the description here, first, an example corresponding to the second embodiment described above is given and described. Fig. 40 is a diagram showing an example of an antenna module 300 corresponding to the second embodiment described above.
如圖40所示般,天線模組300(天線陣列200)具有複數個天線元件100,該複數個天線元件100包含1個發送天線Tx、及3個接收天線Rx1、Rx2、Rx3。發送天線Tx及接收天線Rx1、Rx2、Rx之各自之第1導體層21,於在X軸方向上相互對向之短邊具有缺口部210。As shown in Fig. 40, the antenna module 300 (antenna array 200) has a plurality of antenna elements 100, including a transmitting antenna Tx and three receiving antennas Rx1, Rx2, and Rx3. The first conductive layer 21 of each of the transmitting antenna Tx and the receiving antennas Rx1, Rx2, and Rx has a notch 210 on the short sides facing each other in the X-axis direction.
天線模組300之平面方向之形狀設為矩形,在此處之例中,X軸方向之長度設為5.0 mm,Y軸方向之寬度設為5.0 mm。The shape of the antenna module 300 in the plane direction is set to be a rectangle. In this example, the length in the X-axis direction is set to be 5.0 mm, and the width in the Y-axis direction is set to be 5.0 mm.
又,在Y軸方向上,接收天線Rx1之中心位置與接收天線Rx2之中心位置之間之距離、以及接收天線Rx1之中心位置與接收天線Rx3之中心位置之間之距離設為2.5 mm。又,在X軸方向上,接收天線Rx2之中心位置與接收天線Rx3之中心位置之間之距離、以及接收天線Rx1之中心位置與接收天線Rx3之中心位置之間之距離設為2.5 mm。Furthermore, in the Y-axis direction, the distance between the center position of the receiving antenna Rx1 and the center position of the receiving antenna Rx2, and the distance between the center position of the receiving antenna Rx1 and the center position of the receiving antenna Rx3 are set to 2.5 mm. Furthermore, in the X-axis direction, the distance between the center position of the receiving antenna Rx2 and the center position of the receiving antenna Rx3, and the distance between the center position of the receiving antenna Rx1 and the center position of the receiving antenna Rx3 are set to 2.5 mm.
又,在XY方向(平面方向)上,發送天線Tx之中心位置、與3個接收天線Rx1、Rx3、Rx3之中心位置之間之距離D設為2 mm。再者,3個接收天線Rx1、Rx3、Rx3之平面方向之中心位置在Y軸方向上為接收天線Rx1之中心位置、與接收天線Rx2之中心位置之間之中點之位置,且在X軸方向上為接收天線Rx2之中心位置、與接收天線Rx3之中心位置之間之中點之位置。In the XY direction (plane direction), the distance D between the center position of the transmitting antenna Tx and the center positions of the three receiving antennas Rx1, Rx3, and Rx3 is set to 2 mm. Furthermore, the center positions of the three receiving antennas Rx1, Rx3, and Rx3 in the plane direction are the midpoint position between the center position of the receiving antenna Rx1 and the center position of the receiving antenna Rx2 in the Y-axis direction, and the midpoint position between the center position of the receiving antenna Rx2 and the center position of the receiving antenna Rx3 in the X-axis direction.
圖41係顯示圖40所示之天線模組300之隔離度特性之圖。在圖41中,橫軸表示在天線元件100中使用之電波之頻率[GHz],縱軸表示隔離度特性[dB]。再者,縱軸之值[dB]意指低者隔離度特性為高。Fig. 41 is a graph showing the isolation characteristic of the antenna module 300 shown in Fig. 40. In Fig. 41, the horizontal axis represents the frequency [GHz] of the radio wave used in the antenna element 100, and the vertical axis represents the isolation characteristic [dB]. In addition, the value [dB] of the vertical axis means that the lower the isolation characteristic, the higher the value.
又,在圖41中,3條曲線分別表示相對於發送天線Tx之接收天線Rx1之隔離度特性(Tx→Rx1)、相對於發送天線Tx之接收天線Rx2之隔離度特性(Tx→Rx2)、及相對於發送天線Tx之接收天線Rx3之隔離度特性(Tx→Rx3)。41, the three curves respectively represent the isolation characteristics of the receiving antenna Rx1 relative to the transmitting antenna Tx (Tx→Rx1), the isolation characteristics of the receiving antenna Rx2 relative to the transmitting antenna Tx (Tx→Rx2), and the isolation characteristics of the receiving antenna Rx3 relative to the transmitting antenna Tx (Tx→Rx3).
又,在圖41之右上處,顯示用於將發送天線Tx對接收天線Rx1、Rx2、Rx3之影響可視化之圖像(熱成像形式)。In addition, at the upper right of FIG. 41 , an image (in the form of thermal imaging) is shown for visualizing the effect of the transmitting antenna Tx on the receiving antennas Rx1 , Rx2 , and Rx3 .
如在第2實施形態中上述般,在圖40所示之形態中,因在第1導體層21設置缺口部210,故與無缺口部210之形態相比,隔離度特性提高。As described above in the second embodiment, in the form shown in FIG. 40 , since the notch portion 210 is provided in the first conductive layer 21 , the isolation characteristic is improved compared to the form without the notch portion 210 .
另一方面,對於隔離度特性,期待進一步之改善。因此,在第4實施形態中,進一步改善該隔離度特性。On the other hand, further improvement of the isolation characteristic is expected. Therefore, in the fourth embodiment, the isolation characteristic is further improved.
圖42係第4實施形態之天線模組400之透過立體圖。圖43係第4實施形態之天線模組400之平面圖。在該第4實施形態之說明中,以與上述之第2實施形態(及圖40、圖41)不同之點為中心進行說明。Fig. 42 is a perspective view of the antenna module 400 of the fourth embodiment. Fig. 43 is a plan view of the antenna module 400 of the fourth embodiment. In the description of the fourth embodiment, the differences from the above-mentioned second embodiment (and Figs. 40 and 41) are mainly described.
典型而言,在該第4實施形態中,為了提高相對於發送天線Tx的接收天線Rx1、Rx2、Rx3之隔離度特性,主要使用以下之(A)至(C)之3個手法。 (A)對於各第1導體層21分別設置缺口部210(與上述之第2實施形態相同)。 (B)在平面方向(XY方向)上,拉開發送天線Tx、與接收天線Rx1、Rx2、Rx3之間之距離。 (C)設置用於遮蔽自發送天線Tx向接收天線Rx1、Rx2、Rx3之電場之遮蔽層41。(c)藉由設置連結遮蔽層41、與第2導體層22之第3層間連接部42,而將遮蔽層41降至接地電位。 Typically, in the fourth embodiment, in order to improve the isolation characteristics of the receiving antennas Rx1, Rx2, and Rx3 relative to the transmitting antenna Tx, the following three methods (A) to (C) are mainly used. (A) A notch 210 is provided for each first conductive layer 21 (same as the second embodiment described above). (B) The distance between the transmitting antenna Tx and the receiving antennas Rx1, Rx2, and Rx3 is increased in the plane direction (XY direction). (C) A shielding layer 41 is provided to shield the electric field from the transmitting antenna Tx to the receiving antennas Rx1, Rx2, and Rx3. (c) By providing a third inter-layer connection portion 42 connecting the shielding layer 41 and the second conductive layer 22, the shielding layer 41 is lowered to the ground potential.
如圖42及圖43所示般,天線模組400(天線陣列)具有複數個天線元件100,該複數個天線元件100包含1個發送天線Tx、及3個接收天線Rx1、Rx2、Rx3。發送天線Tx及接收天線Rx1、Rx2、Rx之各自之第1導體層21,於在X軸方向上相互對向之短邊具有缺口部210。As shown in Figures 42 and 43, the antenna module 400 (antenna array) has a plurality of antenna elements 100, including a transmitting antenna Tx and three receiving antennas Rx1, Rx2, and Rx3. The first conductive layer 21 of each of the transmitting antenna Tx and the receiving antennas Rx1, Rx2, and Rx has a notch 210 on the short sides facing each other in the X-axis direction.
天線模組400之平面方向之形狀設為在X軸方向上為長之矩形,在此處之例中,X軸方向(與第1導體層21之長邊平行之方向)之長度設為12.5 mm,Y軸方向(與第1導體層21之短邊平行之方向)之寬度設為7.5 mm(圖40中為5 mm×5 mm)。再者,關於在第4實施形態中說明之具體之數值僅為一例,可適當變更。The shape of the antenna module 400 in the plane direction is set to be a rectangle that is long in the X-axis direction. In this example, the length in the X-axis direction (the direction parallel to the long side of the first conductive layer 21) is set to 12.5 mm, and the width in the Y-axis direction (the direction parallel to the short side of the first conductive layer 21) is set to 7.5 mm (5 mm×5 mm in FIG. 40). Furthermore, the specific numerical values described in the fourth embodiment are only examples and can be appropriately changed.
又,在Y軸方向上,接收天線Rx1之中心位置與接收天線Rx2之中心位置之間之距離、以及接收天線Rx1之中心位置與接收天線Rx3之中心位置之間之距離設為2.5 mm。又,在X軸方向上,接收天線Rx2之中心位置與接收天線Rx3之中心位置之間之距離、以及接收天線Rx1之中心位置與接收天線Rx3之中心位置之間之距離設為2.5 mm。Furthermore, in the Y-axis direction, the distance between the center position of the receiving antenna Rx1 and the center position of the receiving antenna Rx2, and the distance between the center position of the receiving antenna Rx1 and the center position of the receiving antenna Rx3 are set to 2.5 mm. Furthermore, in the X-axis direction, the distance between the center position of the receiving antenna Rx2 and the center position of the receiving antenna Rx3, and the distance between the center position of the receiving antenna Rx1 and the center position of the receiving antenna Rx3 are set to 2.5 mm.
又,在XY方向(平面方向)上,發送天線Tx之中心位置與3個接收天線Rx1、Rx3、Rx3之中心位置之間之距離D設為5 mm。再者,3個接收天線Rx1、Rx3、Rx3之平面方向之中心位置在Y軸方向上為接收天線Rx1之中心位置與接收天線Rx2之中心位置之間之中點之位置,且在X軸方向上為接收天線Rx2之中心位置與接收天線Rx3之中心位置之間之中點之位置。In the XY direction (plane direction), the distance D between the center position of the transmitting antenna Tx and the center positions of the three receiving antennas Rx1, Rx3, and Rx3 is set to 5 mm. Furthermore, the center positions of the three receiving antennas Rx1, Rx3, and Rx3 in the plane direction are the midpoint position between the center position of the receiving antenna Rx1 and the center position of the receiving antenna Rx2 in the Y-axis direction, and the midpoint position between the center position of the receiving antenna Rx2 and the center position of the receiving antenna Rx3 in the X-axis direction.
此處,3個接收天線Rx1、Rx2、Rx3之相對位置關係與圖40所示之例(及第2實施形態)相同。另一方面,發送天線Tx之中心位置與3個接收天線Rx1、Rx3、Rx3之中心位置之間之距離D在圖40所示之例中為2 mm,相對於此,在此處之例中為5 mm,與圖40所示之例相比將該距離延長。Here, the relative position relationship of the three receiving antennas Rx1, Rx2, and Rx3 is the same as that of the example shown in FIG40 (and the second embodiment). On the other hand, the distance D between the center position of the transmitting antenna Tx and the center position of the three receiving antennas Rx1, Rx3, and Rx3 is 2 mm in the example shown in FIG40, while it is 5 mm in the example here, which is longer than that of the example shown in FIG40.
將該第4實施形態與圖40所示之例(及第2實施例)相比,3個接收天線Rx1、Rx2、R3之相對位置關係為固定不變,3個接收天線Rx1、Rx2、R3在X軸方向上向遠離發送天線Tx之方向移動。再者,3個接收天線Rx1、Rx2、R3之相對位置關係被固定,緣於在本技術中使用MIMO之關係上,3個接收天線Rx1、Rx2、R3之相對位置關係大致決定。Comparing the fourth embodiment with the example shown in FIG. 40 (and the second embodiment), the relative position relationship of the three receiving antennas Rx1, Rx2, and R3 is fixed, and the three receiving antennas Rx1, Rx2, and R3 move in the direction away from the transmitting antenna Tx in the X-axis direction. Furthermore, the relative position relationship of the three receiving antennas Rx1, Rx2, and R3 is fixed, and the relative position relationship of the three receiving antennas Rx1, Rx2, and R3 is roughly determined due to the use of MIMO in this technology.
如此般,藉由使3個接收天線Rx1、Rx3、Rx3之中心位置遠離發送天線Tx之中心位置,可改善相對於發送天線Tx之接收天線Rx1、Rx3、Rx3之隔離度特性。In this way, by making the center positions of the three receiving antennas Rx1, Rx3, and Rx3 far away from the center position of the transmitting antenna Tx, the isolation characteristics of the receiving antennas Rx1, Rx3, and Rx3 relative to the transmitting antenna Tx can be improved.
典型而言,發送天線Tx之中心位置、與3個接收天線Rx1、Rx3、Rx3之中心位置之間之XY方向(平面方向)之距離D設為使用電波之半波長(1/2λ)以上。再者,根據實驗結果可知藉由將距離D設為半波長(1/2λ)以上之長度,相對於發送天線Tx之接收天線Rx1、Rx3、Rx3之隔離度特性提高。Typically, the distance D in the XY direction (plane direction) between the center position of the transmitting antenna Tx and the center positions of the three receiving antennas Rx1, Rx3, and Rx4 is set to be greater than half the wavelength (1/2λ) of the radio wave used. Furthermore, according to experimental results, it can be seen that by setting the distance D to be greater than half the wavelength (1/2λ), the isolation characteristics of the receiving antennas Rx1, Rx3, and Rx4 relative to the transmitting antenna Tx are improved.
另一方面,認為愈增大距離D,則愈改善相對於發送天線Tx之接收天線Rx1、Rx3、Rx3之隔離度特性,但根據實驗結果可知,改善傾向在距離D為某一定之距離以上時達到極限。再者,當然亦有愈增大距離D則天線模組400愈大型化之問題。若天線模組400大型化,則亦存在如下問題:產生毫米波雷達IC301、與接收天線Tx、接收天線Rx1、Rx2、Rx2之間之傳送損失,系統整體之性能惡化。On the other hand, it is believed that the greater the distance D, the better the isolation characteristics of the receiving antennas Rx1, Rx3, and Rx4 relative to the transmitting antenna Tx. However, according to experimental results, the improvement tends to reach a limit when the distance D is greater than a certain distance. Furthermore, of course, there is also the problem that the larger the antenna module 400 is, the larger the distance D is. If the antenna module 400 is enlarged, there is also the following problem: transmission loss occurs between the millimeter wave radar IC301 and the receiving antenna Tx, the receiving antennas Rx1, Rx2, and Rx2, and the overall performance of the system is deteriorated.
因此,典型而言,將發送天線Tx之中心位置與3個接收天線Rx1、Rx3、Rx3之中心位置之間之XY方向(平面方向)上之距離D,設為使用電波之半波長之1.5倍(1.5λ)以上。藉此,可在不將天線模組400大型化下,適切地改善隔離度特性。Therefore, typically, the distance D between the center position of the transmitting antenna Tx and the center positions of the three receiving antennas Rx1, Rx3, and Rx4 in the XY direction (plane direction) is set to be at least 1.5 times (1.5λ) the half wavelength of the radio wave used. In this way, the isolation characteristics can be appropriately improved without increasing the size of the antenna module 400.
又,天線模組400(天線陣列)具有遮蔽層41,該遮蔽層41在介電層10之表面10a,設置於發送天線Tx之第1導體層21、與接收天線Rx1、Rx2、Rx3之第1導體層21之間。該遮蔽層41能夠遮蔽自發送用天線Tx直接進入接收用天線Rx1、Rx2、Rx3之不必要之電場(電波)。In addition, the antenna module 400 (antenna array) has a shielding layer 41, which is disposed between the first conductive layer 21 of the transmitting antenna Tx and the first conductive layer 21 of the receiving antennas Rx1, Rx2, and Rx3 on the surface 10a of the dielectric layer 10. The shielding layer 41 can shield unnecessary electric fields (radio waves) that directly enter the receiving antennas Rx1, Rx2, and Rx3 from the transmitting antenna Tx.
遮蔽層41在介電層10之表面10a,以包圍發送天線Tx之第1導體層21之方式形成為環狀(且為帶狀)。在此處之例中,遮蔽層41設為矩形之環狀,但關於該形狀,亦可為橢圓形之環狀等其他形狀。The shielding layer 41 is formed in a ring shape (and in a strip shape) on the surface 10a of the dielectric layer 10 so as to surround the first conductive layer 21 of the transmitting antenna Tx. In this example, the shielding layer 41 is formed in a rectangular ring shape, but the shape may be another shape such as an elliptical ring shape.
遮蔽層41典型而言為形成於介電層10之表面10a之金屬層。作為使用於遮蔽層41之金屬材料,例如可舉出銅或鋁等,但對於材料並無特別限定。又,對於該材料,可使用與第1導體層21及第2導體層相同之材料,亦可使用不同之材料。關於遮蔽層41之厚度並無特別限定,可為與第1導體層21及第2導體層22相同之厚度,亦可為不同之厚度。The shielding layer 41 is typically a metal layer formed on the surface 10a of the dielectric layer 10. Examples of the metal material used for the shielding layer 41 include copper and aluminum, but the material is not particularly limited. The material may be the same as that of the first conductive layer 21 and the second conductive layer, or a different material. The thickness of the shielding layer 41 is not particularly limited, and may be the same as that of the first conductive layer 21 and the second conductive layer 22, or a different thickness.
在此處之例中,遮蔽層41之外周之長度設為3.5 mm×3.5 mm(X軸×Y軸),遮蔽層41之寬度(帶之寬度)設為0.25 mm。又,在Y軸方向上,遮蔽層41之內周與發送天線Tx之第1導體層21之長邊之間之距離設為1 mm。又,在X軸方向上,遮蔽層41之內周、與發送天線Tx之第1導體層21之短邊之間之距離設為0.6 mm。In this example, the length of the outer periphery of the shielding layer 41 is set to 3.5 mm × 3.5 mm (X axis × Y axis), and the width of the shielding layer 41 (the width of the tape) is set to 0.25 mm. In addition, in the Y axis direction, the distance between the inner periphery of the shielding layer 41 and the long side of the first conductive layer 21 of the transmitting antenna Tx is set to 1 mm. In addition, in the X axis direction, the distance between the inner periphery of the shielding layer 41 and the short side of the first conductive layer 21 of the transmitting antenna Tx is set to 0.6 mm.
又,天線模組400(天線陣列)具有複數個第3層間連接部42。該第3層間連接部42將介電層10沿其厚度方向(Z軸方向)貫通,將遮蔽層41與第2導體層22之間電性連接。第3層間連接部42與第1層間連接部31及第2層間連接部32同樣地係圓柱狀之導電體,由設置於介電層10之通孔電鍍或以導電材料填充之埋入導通孔形成。In addition, the antenna module 400 (antenna array) has a plurality of third interlayer connecting portions 42. The third interlayer connecting portions 42 penetrate the dielectric layer 10 along the thickness direction (Z-axis direction) thereof and electrically connect the shielding layer 41 and the second conductive layer 22. The third interlayer connecting portions 42 are cylindrical conductive bodies similar to the first interlayer connecting portions 31 and the second interlayer connecting portions 32, and are formed by buried conductive holes provided in the dielectric layer 10 by through-hole electroplating or filled with conductive materials.
第3層間連接部42因相對於遮蔽層41及第2導體層22垂直連接,故第3層間連接部42之長度(高度)相當於介電層10之厚度(0.65 mm)。第3層間連接部42之直徑例如設為與遮蔽層41之寬度(帶之寬度)相同之大小。第3層間連接部42之直徑可與第1層間連接部31及第2層間連接部32為相同之直徑,亦可為不同之直徑。Since the third interlayer connection portion 42 is vertically connected to the shielding layer 41 and the second conductive layer 22, the length (height) of the third interlayer connection portion 42 is equal to the thickness (0.65 mm) of the dielectric layer 10. The diameter of the third interlayer connection portion 42 is, for example, set to be the same size as the width (band width) of the shielding layer 41. The diameter of the third interlayer connection portion 42 can be the same as the first interlayer connection portion 31 and the second interlayer connection portion 32, or can be different diameters.
複數個第3層間連接部42沿著遮蔽層41之周向,以規定之間隔(0.8 mm)配置。再者,在此處之例中,複數個第3層間連接部42不是遍及遮蔽層41之全周地設置,而是對於遮蔽層41之全周中之一部分設置。具體而言,複數個第3層間連接部42設置於遮蔽層41之矩形之4邊中與沿著Y軸方向之1邊對應之部位(發送天線Tx及接收天線Rx之間之1邊)、及與沿著X軸方向之方向之2邊對應之部位。再者,複數個第3層間連接部42可遍及遮蔽層41之全周而設置。The plurality of third inter-layer connection parts 42 are arranged at a predetermined interval (0.8 mm) along the circumference of the shielding layer 41. In the example here, the plurality of third inter-layer connection parts 42 are not arranged over the entire circumference of the shielding layer 41, but are arranged for a portion of the entire circumference of the shielding layer 41. Specifically, the plurality of third inter-layer connection parts 42 are arranged at a portion corresponding to one side along the Y-axis direction (one side between the transmitting antenna Tx and the receiving antenna Rx) and at a portion corresponding to two sides along the X-axis direction among the four sides of the rectangle of the shielding layer 41. Furthermore, the plurality of third inter-layer connection parts 42 may be arranged over the entire circumference of the shielding layer 41.
此處,遮蔽層41經由複數個第3層間連接部42與第2導體層22連接。因第2導體層22接地,故對應地,遮蔽層41亦被設為接地電位。如此般,因將遮蔽層41設為接地電位,故可適切地遮蔽自發送用天線Tx向接收用天線Rx1、Rx2、Rx3之電場(電波)。Here, the shielding layer 41 is connected to the second conductive layer 22 via a plurality of third inter-layer connecting portions 42. Since the second conductive layer 22 is grounded, the shielding layer 41 is also set to the ground potential accordingly. In this way, since the shielding layer 41 is set to the ground potential, the electric field (radio wave) from the transmitting antenna Tx to the receiving antennas Rx1, Rx2, and Rx3 can be appropriately shielded.
圖44係顯示天線模組400之隔離度特性之圖。在圖44中,橫軸表示在天線元件100中使用之電波之頻率[GHz],縱軸表示隔離度特性[dB]。再者,縱軸之值[dB]意指低者隔離度特性為高。FIG44 is a graph showing the isolation characteristic of the antenna module 400. In FIG44, the horizontal axis represents the frequency [GHz] of the radio wave used in the antenna element 100, and the vertical axis represents the isolation characteristic [dB]. In addition, the value [dB] of the vertical axis means that the lower the isolation characteristic, the higher the value.
又,在圖44中,3條曲線分別表示相對於發送天線Tx之接收天線Rx1之隔離度特性(Tx→Rx1)、相對於發送天線Tx之接收天線Rx2之隔離度特性(Tx→Rx2)、及相對於發送天線Tx之接收天線Rx3之隔離度特性(Tx→Rx3)。44, the three curves respectively represent the isolation characteristics of the receiving antenna Rx1 relative to the transmitting antenna Tx (Tx→Rx1), the isolation characteristics of the receiving antenna Rx2 relative to the transmitting antenna Tx (Tx→Rx2), and the isolation characteristics of the receiving antenna Rx3 relative to the transmitting antenna Tx (Tx→Rx3).
又,在圖44之右上處,顯示用於將發送天線Tx對接收天線Rx1、Rx2、Rx3之影響可視化之圖像(熱成像形式)。In addition, at the upper right of FIG. 44 , an image (in the form of thermal imaging) is shown for visualizing the effect of the transmitting antenna Tx on the receiving antennas Rx1 , Rx2 , and Rx3 .
對圖44(第4實施形態)與圖41(第2實施形態)進行比較,Tx→Rx1之曲線、Tx→Rx2之曲線、Tx→Rx3之曲線整體上成為向下側下降之傾向。即,此意指在上述(A)「缺口部210」、(B)「距離D」、及(C)「遮蔽層42」之組合之第4實施形態中,與僅上述(A)「缺口部」之第2實施形態相比隔離度特性進一步得到改善。Comparing FIG. 44 (the fourth embodiment) with FIG. 41 (the second embodiment), the curves Tx→Rx1, Tx→Rx2, and Tx→Rx3 all tend to fall downward. That is, in the fourth embodiment of the combination of the (A) "notch 210", (B) "distance D", and (C) "shielding layer 42", the isolation characteristic is further improved compared to the second embodiment of the (A) "notch" alone.
又,在圖44之3條曲線中,表示隔離度特性之值設為大致30[dB]以下。如此般,藉由將表示隔離度特性之值設為30[dB]以下,可獲得充分之隔離度特性。In addition, in the three curves of Fig. 44, the values representing the isolation characteristics are set to approximately 30 [dB] or less. In this way, by setting the values representing the isolation characteristics to 30 [dB] or less, a sufficient isolation characteristic can be obtained.
[作用等] 如以上說明般,在第4實施形態中,在介電層10之表面10a,在發送天線Tx之第1導體層21、與接收天線Rx1、Rx2、Rx3之第1導體層21之間設置遮蔽自發送天線Tx向接收天線Rx1、Rx2、Rx3之電場之遮蔽層41(金屬層)。藉此,可進一步改善相對於發送天線Tx之接收天線Rx1、Rx2、Rx3之隔離度特性。 [Function, etc.] As described above, in the fourth embodiment, a shielding layer 41 (metal layer) is provided between the first conductor layer 21 of the transmitting antenna Tx and the first conductor layer 21 of the receiving antennas Rx1, Rx2, and Rx3 on the surface 10a of the dielectric layer 10 to shield the electric field from the transmitting antenna Tx to the receiving antennas Rx1, Rx2, and Rx3. In this way, the isolation characteristics of the receiving antennas Rx1, Rx2, and Rx3 relative to the transmitting antenna Tx can be further improved.
又,在第4實施形態中,遮蔽層41在介電層10之表面10a以包圍發送天線Tx之第1導體層21之方式形成為環狀。藉此,可進一步改善相對於發送天線Tx之接收天線Rx1、Rx2、Rx3之隔離度特性。Furthermore, in the fourth embodiment, the shielding layer 41 is formed in a ring shape on the surface 10a of the dielectric layer 10 so as to surround the first conductive layer 21 of the transmitting antenna Tx. This can further improve the isolation characteristics of the receiving antennas Rx1, Rx2, and Rx3 relative to the transmitting antenna Tx.
又,在第4實施形態中,設置貫通介電層10而將遮蔽層41與第2導體層22之間予以連接之第3層間連接部42。藉此,因可將遮蔽層41設為接地電位,故可適切地遮蔽自發送用天線Tx向接收用天線Rx1、Rx2、Rx3之電場(電波)。In the fourth embodiment, a third interlayer connection portion 42 is provided that penetrates the dielectric layer 10 and connects the shielding layer 41 and the second conductive layer 22. Thus, the shielding layer 41 can be grounded, and thus the electric field (radio wave) from the transmission antenna Tx to the reception antennas Rx1, Rx2, and Rx3 can be appropriately shielded.
又,在第4實施形態中,第3層間連接部42設為設置於介電層10之通孔電鍍或埋入導通孔。藉此,可將遮蔽層41與第2導體層22之間適切地連接。Furthermore, in the fourth embodiment, the third inter-layer connection portion 42 is formed as a through-hole electroplating or buried via provided in the dielectric layer 10. Thus, the shielding layer 41 and the second conductive layer 22 can be properly connected.
又,在第4實施形態中,在將使用電波之波長設為λ,將發送天線Tx之中心位置與前接收天線Rx1、Rx2、Rx3之中心位置之間之平面方向之距離設為D時,設為0.5λ≦D≦1.5λ。藉由將距離D設為半波長(1/2λ)以上之長度,可進一步改善相對於發送天線Tx之接收天線Rx1、Rx3、Rx3之隔離度特性。又,藉由將距離D設為使用電波之波長之1.5倍(1.5λ)以下,可在不將天線模組400大型化下,適切地改善隔離度特性。Furthermore, in the fourth embodiment, when the wavelength of the radio wave used is set to λ and the distance in the plane direction between the center position of the transmitting antenna Tx and the center position of the front receiving antennas Rx1, Rx2, and Rx3 is set to D, it is set to 0.5λ≦D≦1.5λ. By setting the distance D to a length of half a wavelength (1/2λ) or more, the isolation characteristics of the receiving antennas Rx1, Rx3, and Rx3 relative to the transmitting antenna Tx can be further improved. Furthermore, by setting the distance D to 1.5 times (1.5λ) or less of the wavelength of the radio wave used, the isolation characteristics can be appropriately improved without enlarging the antenna module 400.
<第4實施形態之各種變化例> 接著,對於第4實施形態之各種變化例進行說明。 <Various variations of the fourth embodiment> Next, various variations of the fourth embodiment will be described.
在上述之第4實施形態中,對於使用(A)「缺口部210」、(B)「距離D」、及(C)「遮蔽層42」之3者之組合之情形進行了說明。另一方面,關於(A)「缺口部210」、(B)「距離D」、及(C)「遮蔽層42」之組合,可為以下所示之任一組合。 1. 僅(A)「缺口部210」之形態(第2實施形態) 2. 僅(B)「距離D」之形態 3. 僅(C)「遮蔽層42」之形態 4. (A)「缺口部210」及(B)「距離D」之組合之形態 5. (A)「缺口部210」及(C)「遮蔽層42」之組合之形態 6. (B)「距離D」及(C)「遮蔽層42」之組合之形態 7. (A)「缺口部210」、(B)「距離D」及(C)「遮蔽層42」之組合之形態(第4實施形態) In the fourth embodiment described above, a case of using a combination of (A) "notch 210", (B) "distance D", and (C) "shielding layer 42". On the other hand, the combination of (A) "notch 210", (B) "distance D", and (C) "shielding layer 42" may be any of the following combinations. 1. The form of only (A) "notch 210" (second embodiment) 2. The form of only (B) "distance D" 3. The form of only (C) "shielding layer 42" 4. The form of the combination of (A) "notch 210" and (B) "distance D" 5. The form of the combination of (A) "notch 210" and (C) "shielding layer 42" 6. The form of the combination of (B) "distance D" and (C) "shielding layer 42" 7. The form of the combination of (A) "notch 210", (B) "distance D" and (C) "shielding layer 42" (fourth embodiment)
此處,在包含上述(C)之「遮蔽層42」之形態之情形下,即在上述3.5.6.7.之4個形態中,可設置(c)「第3層間連接部42」,另一方面,亦可省略(c)「第3層間連接部42」。因此,上述3.5.6.7.之4個形態可根據(c)「第3層間連接部42」之有無分而支成2個,但可為該任一形態。再者,在上述之第4實施形態中,對於7.(A)「缺口部210」、(B)及(C)之3者之組合、且包含(c)之形態代表性地進行說明。Here, in the case of the form including the above-mentioned "shielding layer 42" (C), that is, in the above-mentioned 4 forms 3.5.6.7., (c) "third inter-layer connection part 42" can be provided, and on the other hand, (c) "third inter-layer connection part 42" can be omitted. Therefore, the above-mentioned 4 forms 3.5.6.7. can be divided into two according to the presence or absence of (c) "third inter-layer connection part 42", but any form can be used. Furthermore, in the above-mentioned 4th embodiment, the combination of 7. (A) "notch part 210", (B) and (C) and the form including (c) are representatively described.
此處,對於上述4.之(A)「缺口部210」及(B)「距離D」之組合之形態,舉出一例代表性地進行說明。Here, a representative example is given to explain the combination of (A) "notch 210" and (B) "distance D" in 4. above.
圖45係第4實施形態之變化例之天線模組500之透過立體圖。在圖45所示之天線模組500中,與圖42所示之天線模組400相比,省略遮蔽部41及第3層間連接部42。除此以外與圖42相同。Fig. 45 is a perspective view of an antenna module 500 of a variation of the fourth embodiment. In the antenna module 500 shown in Fig. 45, the shielding portion 41 and the third inter-layer connecting portion 42 are omitted compared to the antenna module 400 shown in Fig. 42. Other aspects are the same as those of Fig. 42.
再者,在天線模組500中,在發送天線Tx及接收天線Rx1、Rx2、Rx之各自之第1導體層21,於在X軸方向上相互對向之短邊設置缺口部210。又,在XY方向(平面方向)上,發送天線Tx之中心位置與3個接收天線Rx1、Rx3、Rx3之中心位置之間之距離D設為5 mm。即,距離D滿足0.5λ≦D≦1.5λ之條件。Furthermore, in the antenna module 500, the first conductive layer 21 of each of the transmitting antenna Tx and the receiving antennas Rx1, Rx2, Rx is provided with a notch 210 on the short sides facing each other in the X-axis direction. In addition, in the XY direction (plane direction), the distance D between the center position of the transmitting antenna Tx and the center positions of the three receiving antennas Rx1, Rx3, Rx3 is set to 5 mm. That is, the distance D satisfies the condition of 0.5λ≦D≦1.5λ.
圖46係顯示天線模組500之隔離度特性之圖。在圖46中,橫軸表示在天線元件100中使用之電波之頻率[GHz],縱軸表示隔離度特性[dB]。再者,縱軸之值[dB]意指低者隔離度特性為高。Fig. 46 is a graph showing the isolation characteristic of the antenna module 500. In Fig. 46, the horizontal axis represents the frequency [GHz] of the radio wave used in the antenna element 100, and the vertical axis represents the isolation characteristic [dB]. In addition, the value [dB] of the vertical axis means that the lower the isolation characteristic, the higher the value.
又,在圖46中,3條曲線分別表示相對於發送天線Tx之接收天線Rx1之隔離度特性(Tx→Rx1)、相對於發送天線Tx之接收天線Rx2之隔離度特性(Tx→Rx2)、及相對於發送天線Tx之接收天線Rx3之隔離度特性(Tx→Rx3)。46, the three curves respectively represent the isolation characteristics of the receiving antenna Rx1 relative to the transmitting antenna Tx (Tx→Rx1), the isolation characteristics of the receiving antenna Rx2 relative to the transmitting antenna Tx (Tx→Rx2), and the isolation characteristics of the receiving antenna Rx3 relative to the transmitting antenna Tx (Tx→Rx3).
又,在圖46之右上處,顯示用於將發送天線Tx對接收天線Rx1、Rx2、Rx3之影響可視化之圖像(熱成像形式)。In addition, at the upper right of FIG. 46 , an image (in the form of thermal imaging) is shown for visualizing the effect of the transmitting antenna Tx on the receiving antennas Rx1, Rx2, and Rx3.
對圖46(第4實施形態變化例)、與圖41(第2實施形態)進行比較,Tx→Rx1之曲線、Tx→Rx2之曲線、Tx→Rx3之曲線整體上成為向下側下降之傾向。即,此意指在上述(A)「缺口部210」、(B)「距離D」之組合之第4實施形態之變化例中,與僅上述(A)「缺口部」之第2實施形態相比隔離度特性進一步得到改善。Comparing FIG. 46 (variation of the fourth embodiment) with FIG. 41 (second embodiment), the curves of Tx→Rx1, Tx→Rx2, and Tx→Rx3 are generally inclined downward. That is, in the variation of the fourth embodiment of the combination of (A) "notch 210" and (B) "distance D", the isolation characteristic is further improved compared to the second embodiment of the (A) "notch" alone.
在以上之說明中,對於遮蔽層41整體包圍發送天線Tx之第1導體層21之周圍之形態進行了說明。另一方面,遮蔽層41亦可形成為局部地包圍發送天線Tx之第1導體層21之周圍。典型而言,遮蔽層41只要形成為介置於發送天線Tx之第1導體層21與接收天線Rx1、Rx2、Rx3之第1導體層21之間即可。In the above description, the shielding layer 41 is described as completely surrounding the first conductive layer 21 of the transmitting antenna Tx. On the other hand, the shielding layer 41 may be formed to partially surround the first conductive layer 21 of the transmitting antenna Tx. Typically, the shielding layer 41 only needs to be formed to be interposed between the first conductive layer 21 of the transmitting antenna Tx and the first conductive layer 21 of the receiving antennas Rx1, Rx2, and Rx3.
又,在以上之說明中,對於遮蔽層41包圍發送天線Tx側之情形進行了說明,但遮蔽層42亦可形成為(局部或整體地)包圍接收天線Rx1、Rx2、Rx3。該情形下,遮蔽層41可形成為彙總地整體包圍3個接收天線Rx1、Rx2、Rx3,亦可形成為個別地包圍3個接收天線Rx1、Rx2、Rx3。In the above description, the shielding layer 41 surrounds the transmitting antenna Tx side, but the shielding layer 42 may be formed to surround (partially or entirely) the receiving antennas Rx1, Rx2, and Rx3. In this case, the shielding layer 41 may be formed to surround the three receiving antennas Rx1, Rx2, and Rx3 collectively or individually.
再者,在遮蔽層41設置於接收天線Rx1、Rx2、Rx3側之情形下,典型而言,於遮蔽層41設置第3層間連接部42,將遮蔽層41設定為接地電位。Furthermore, when the shielding layer 41 is disposed on the side of the receiving antennas Rx1, Rx2, and Rx3, typically, a third inter-layer connecting portion 42 is disposed on the shielding layer 41 to set the shielding layer 41 to a ground potential.
此處,在遮蔽層41設置於接收天線Rx1、Rx2、Rx3側之情形下,根據實驗結果可知在遮蔽層41未設定為接地電位時,遮蔽層41反而對隔離度特性造成惡劣影響。此係緣於若未接地之遮蔽層41設置於接收天線Rx1、Rx2、Rx3之附近,則該遮蔽層41成為來自發送天線Tx之電場(電波)往向接收天線Rx1、Rx2、Rx3之中介角色。因此,在遮蔽層41設置於接收天線Rx1、Rx2、Rx3側之情形下,典型而言,於遮蔽層41設置第3層間連接部42,將遮蔽層41設定為接地電位。Here, in the case where the shielding layer 41 is set on the side of the receiving antennas Rx1, Rx2, and Rx3, according to the experimental results, when the shielding layer 41 is not set to the ground potential, the shielding layer 41 will have a bad effect on the isolation characteristics. This is because if the ungrounded shielding layer 41 is set near the receiving antennas Rx1, Rx2, and Rx3, the shielding layer 41 becomes an intermediary for the electric field (radio wave) from the transmitting antenna Tx to the receiving antennas Rx1, Rx2, and Rx3. Therefore, in the case where the shielding layer 41 is set on the side of the receiving antennas Rx1, Rx2, and Rx3, typically, the third inter-layer connection portion 42 is set on the shielding layer 41, and the shielding layer 41 is set to the ground potential.
再者,本技術亦可採用如以下之構成。 (1)一種天線元件,其包含:平面元件形狀之第1導體層; 第2導體層,其連接於接地電位; 介電層,其設置於前述第1導體層與前述第2導體層之間; 第1層間連接部,其貫通前述介電層,將前述第1導體層向饋電部連接;及 第2層間連接部,其貫通前述介電層,將前述第1導體層與前述第2導體層之間予以連接。 (2)如上述(1)之天線元件,其中 前述第1導體層以較前述第2導體層小之面積形成。 (3)如上述(2)之天線元件,其中 藉由前述第1層間連接部、前述第1導體層、及前述第2層間連接部形成之迴路長度為使用電波之1波長以下。 (4)如上述(3)之天線元件,其中 前述迴路長度為相當於使用電波之半波長之大小。 (5)如上述(2)至(4)中任一項之天線元件,其中 前述第1導體層之平面形狀為具有長邊及短邊之矩形。 (6)如上述(5)之天線元件,其中 前述第1導體層具有連接有前述第1層間連接部之第1區域、及連接有前述第2層間連接部之第2區域, 前述第1區域及前述第2區域與前述第1導體層之周緣部分開配置。 (7)如上述(6)之天線元件,其中 前述第1區域與前述第2區域沿與前述長邊平行之方向配置。 (8)如上述(6)或(7)之天線元件,其中 前述第1區域與前述第2區域沿與平行於前述長邊之方向交叉之方向配置。 (9)如上述(1)至(8)中任一項之天線元件,其中 前述介電層係由介電材料構成之介電基板, 前述第1導體層係形成於前述介電基板之第1主面之金屬層, 前述第2導體層係形成於與前述第1主面為相反側之前述介電基板之第2主面之金屬層。 (10)如上述(1)至(9)中任一項之天線元件,其中 前述第2導體層具有以較前述第1層間連接部之外徑大之開口徑形成之開口部。 (11)如上述(1)至(10)中任一項之天線元件,其中 前述第1層間連接部及前述第2層間連接部係設置於前述介電層之通孔電鍍或埋入導通孔。 (12) 一種天線陣列,其包含複數個天線元件,該複數個天線元件各自包含:平面元件形狀之第1導體層;第2導體層,其連接於接地電位;介電層,其設置於前述第1導體層與前述第2導體層之間;第1層間連接部,其貫通前述介電層,將前述第1導體層向饋電部連接;及第2層間連接部,其貫通前述介電層,將前述第1導體層與前述第2導體層之間予以連接; 前述複數個天線元件各者之前述第1導體層排列於前述介電層之一表面。 (13)如上述(12)之天線陣列,其中 前述複數個天線元件中之至少1個係發送用之天線元件,其他之至少1個係接收用之天線元件。 (14)如上述(13)之天線陣列,其中 前述複數個天線元件在前述表面上沿著相互正交之第1軸向及第2軸向矩陣狀排列。 (15)如上述(14)之天線陣列,其中 前述第1導體層具有含有與前述第1軸向平行之長邊、及與前述第2軸向平行之短邊之矩形之平面形狀, 沿前述第1軸向排列之2個前述第1導體層之相互對向之短邊,具有將前述2個第1導體層之間隔局部擴張之缺口部。 (16)如上述(12)至(15)中任一項之天線陣列,其中 前述複數個天線元件各者之前述第2導體層係由共通之導體層形成。 (17)如上述(13)至(16)中任一項之天線陣列,其進一步包含: 遮蔽層,其在前述介電層之前述表面,設置於前述發送用之天線元件之前述第1導體層、與前述接收用之天線元件之前述第1導體層之間,遮蔽自前述發送用之天線元件向前述接收用之天線之電場。 (18) 如上述(17)之天線陣列,其中 前述遮蔽層在前述介電層之前述表面,以包圍前述發送用之天線元件之第1導體層之方式形成為環狀。 (19) 如上述(17)或(18)之天線陣列,其進一步包含: 第3層間連接部,其貫通前述介電層,將前述遮蔽層與前述第2導體層之間予以連接。 (20) 如上述(19)之天線陣列,其中 前述第3層間連接部係設置於前述介電層之通孔電鍍或埋入導通孔。 (21) 如上述(17)至(20)中任一項之天線陣列,其中 前述遮蔽層係形成於前述介電層之前述表面之金屬層。 (22)如上述(13)至(21)中任一項之天線陣列,其中 前述複數個天線元件包含1個發送用之天線元件、及複數個接收用之天線元件,且 在將使用電波之波長設為λ、將前述1個發送用之天線元件之中心位置與前述複數個接收用天線元件之中心位置之間之平面方向之距離設為D時,0.5λ≦D。 (23)如上述(22)之天線陣列,其中 D≦1.5λ。 (24) 一種天線模組,其包含複數個天線元件及信號處理電路,上述複數個天線元件各自包含: 平面元件形狀之第1導體層; 第2導體層,其連接於接地電位; 介電層,其設置於前述第1導體層與前述第2導體層之間; 第1層間連接部,其貫通前述介電層,將前述第1導體層向饋電部連接;及 第2層間連接部,其貫通前述介電層,將前述第1導體層與前述第2導體層之間予以連接; 上述信號處理電路連接於前述複數個天線元件。 Furthermore, the present technology can also adopt the following structure. (1) An antenna element, which includes: a first conductor layer in the shape of a planar element; a second conductor layer connected to the ground potential; a dielectric layer disposed between the first conductor layer and the second conductor layer; a first inter-layer connection portion penetrating the dielectric layer to connect the first conductor layer to the feeder portion; and a second inter-layer connection portion penetrating the dielectric layer to connect the first conductor layer to the second conductor layer. (2) An antenna element as described in (1), wherein the first conductor layer is formed with a smaller area than the second conductor layer. (3) An antenna element as described in (2) above, wherein the length of the loop formed by the first interlayer connection portion, the first conductive layer, and the second interlayer connection portion is less than 1 wavelength of the radio wave used. (4) An antenna element as described in (3) above, wherein the length of the loop is equal to half the wavelength of the radio wave used. (5) An antenna element as described in any one of (2) to (4) above, wherein the planar shape of the first conductive layer is a rectangle having long sides and short sides. (6) An antenna element as described in (5) above, wherein the first conductive layer has a first region connected to the first inter-layer connection portion, and a second region connected to the second inter-layer connection portion, and the first region and the second region are arranged separately from the peripheral portion of the first conductive layer. (7) An antenna element as described in (6) above, wherein the first region and the second region are arranged along a direction parallel to the long side. (8) An antenna element as described in (6) or (7) above, wherein the first region and the second region are arranged along a direction intersecting the direction parallel to the long side. (9) An antenna element as described in any one of (1) to (8) above, wherein the dielectric layer is a dielectric substrate made of a dielectric material, the first conductor layer is a metal layer formed on the first main surface of the dielectric substrate, and the second conductor layer is a metal layer formed on the second main surface of the dielectric substrate on the opposite side to the first main surface. (10) An antenna element as described in any one of (1) to (9) above, wherein the second conductor layer has an opening portion formed with an opening diameter larger than the outer diameter of the first inter-layer connection portion. (11) An antenna element as described in any one of (1) to (10) above, wherein the first inter-layer connection portion and the second inter-layer connection portion are provided in through-hole electroplating or buried via holes of the dielectric layer. (12) An antenna array comprises a plurality of antenna elements, each of which comprises: a first conductor layer in the shape of a planar element; a second conductor layer connected to a ground potential; a dielectric layer disposed between the first conductor layer and the second conductor layer; a first inter-layer connection portion penetrating the dielectric layer and connecting the first conductor layer to a feeder portion; and a second inter-layer connection portion penetrating the dielectric layer and connecting the first conductor layer to the second conductor layer; The first conductor layer of each of the plurality of antenna elements is arranged on a surface of the dielectric layer. (13) An antenna array as described in (12) above, wherein at least one of the plurality of antenna elements is a transmitting antenna element, and at least one of the other antenna elements is a receiving antenna element. (14) An antenna array as described in (13) above, wherein the plurality of antenna elements are arranged in a matrix along the first and second axes that are orthogonal to each other on the surface. (15) An antenna array as described in (14) above, wherein the first conductor layer has a rectangular planar shape having a long side parallel to the first axis and a short side parallel to the second axis, and the short sides of the two first conductor layers arranged along the first axis that face each other have a notch that partially expands the interval between the two first conductor layers. (16) An antenna array as described in any one of (12) to (15), wherein the aforementioned second conductor layer of each of the plurality of antenna elements is formed by a common conductor layer. (17) An antenna array as described in any one of (13) to (16), further comprising: a shielding layer disposed on the aforementioned surface of the aforementioned dielectric layer between the aforementioned first conductor layer of the aforementioned transmitting antenna element and the aforementioned first conductor layer of the aforementioned receiving antenna element, shielding the electric field from the aforementioned transmitting antenna element to the aforementioned receiving antenna. (18) An antenna array as described in (17), wherein the aforementioned shielding layer is formed in a ring shape on the aforementioned surface of the aforementioned dielectric layer so as to surround the aforementioned first conductor layer of the aforementioned transmitting antenna element. (19) The antenna array as described in (17) or (18) further comprises: A third inter-layer connection portion which penetrates the dielectric layer and connects the shielding layer to the second conductive layer. (20) The antenna array as described in (19), wherein the third inter-layer connection portion is provided in a through-hole electroplating or buried through-hole of the dielectric layer. (21) The antenna array as described in any one of (17) to (20), wherein the shielding layer is a metal layer formed on the aforementioned surface of the dielectric layer. (22) An antenna array as in any one of (13) to (21) above, wherein the plurality of antenna elements include one transmitting antenna element and a plurality of receiving antenna elements, and when the wavelength of the radio wave used is λ and the distance in the plane direction between the center position of the one transmitting antenna element and the center position of the plurality of receiving antenna elements is D, 0.5λ≦D. (23) An antenna array as in (22) above, wherein D≦1.5λ. (24) An antenna module comprises a plurality of antenna elements and a signal processing circuit, wherein each of the plurality of antenna elements comprises: a first conductive layer in the shape of a planar element; a second conductive layer connected to a ground potential; a dielectric layer disposed between the first conductive layer and the second conductive layer; a first inter-layer connection portion penetrating the dielectric layer and connecting the first conductive layer to a feeding portion; and a second inter-layer connection portion penetrating the dielectric layer and connecting the first conductive layer to the second conductive layer; the signal processing circuit is connected to the plurality of antenna elements.
1:介電體多層基板 10, 110:介電層 10a:第1主面/表面 10b:第2主面/背面 21, 121:第1導體層 21L:長邊 21S:短邊 22, 122:第2導體層 22a:開口部 31:第1層間連接部/層間連接部 32:第2層間連接部/層間連接部 41:遮蔽層 42:第3層間連接部 100, 101, 102, 151~156:天線元件 101:天線元件 123:天線構造體 124:地導體板 131:層間連接部 200:天線陣列 210:缺口部 211:第1區域 212:第2區域 300, 400, 500:天線模組 301:信號處理電路 302:調壓器 303:記憶體 304:連接器 F:饋電部 G:接地電位 Rx1, Rx2, Rx3:接收天線 Tx:發送天線 X, Y, Z:軸 1: Dielectric multilayer substrate 10, 110: Dielectric layer 10a: 1st main surface/front surface 10b: 2nd main surface/back surface 21, 121: 1st conductor layer 21L: Long side 21S: Short side 22, 122: 2nd conductor layer 22a: Opening 31: 1st interlayer connection part/interlayer connection part 32: 2nd interlayer connection part/interlayer connection part 41: Shielding layer 42: 3rd interlayer connection part 100, 101, 102, 151~156: Antenna element 101: Antenna element 123: Antenna structure 124: Ground conductor plate 131: Interlayer connection 200: Antenna array 210: Notch 211: Area 1 212: Area 2 300, 400, 500: Antenna module 301: Signal processing circuit 302: Voltage regulator 303: Memory 304: Connector F: Feeder G: Ground potential Rx1, Rx2, Rx3: Receiving antenna Tx: Transmitting antenna X, Y, Z: Axes
圖1係本技術之第1實施形態之天線元件之透過立體圖。 圖2係上述天線元件之側剖視圖。 圖3係顯示上述天線元件之電壓駐波比之一例之模擬結果。 圖4係顯示上述天線元件之60 GHz之方位角平面之放射特性之模擬結果。 圖5係顯示上述天線元件之60 GHz之仰角平面之放射特性之模擬結果。 圖6係比較例1之天線元件之透過立體圖。 圖7係比較例1之天線元件之側剖視圖。 圖8係顯示比較例1之天線元件之電壓駐波比之一例之模擬結果。 圖9係顯示比較例1之天線元件之60 GHz之方位角平面之放射特性之模擬結果。 圖10係顯示比較例1之天線元件之60 GHz之仰角平面之放射特性之模擬結果。 圖11係比較例2之天線元件之透過立體圖。 圖12係比較例2之天線元件之側視圖。 圖13係顯示比較例2之天線元件之電壓駐波比之一例之模擬結果。 圖14係顯示比較例2之天線元件之60 GHz之方位角平面之放射特性之模擬結果。 圖15係顯示比較例2之天線元件之60 GHz之仰角平面之放射特性之模擬結果。 圖16係對圖1所示之天線元件與圖6所示之比較例1之天線元件之天線特性及指向性進行比較之模擬結果。 圖17係本技術之第2實施形態之天線模組之透過立體圖。 圖18係上述天線模組之平面圖。 圖19係顯示上述天線模組之電路構成之方塊圖。 圖20係顯示未實施隔離度處理之上述天線模組之構成之與圖17相同之立體圖。 圖21係顯示在上述天線模組中相對於發送天線之一接收天線之隔離度特性之模擬結果。 圖22係顯示在上述天線模組中相對於發送天線之又一接收天線之隔離度特性之模擬結果。 圖23係顯示在上述天線模組中相對於發送天線之再一接收天線之隔離度特性之模擬結果。 圖24係顯示在上述天線模組中接收天線間之隔離度特性之一例之模擬結果。 圖25係顯示在上述天線模組中接收天線間之隔離度特性之又一例之模擬結果。 圖26係顯示在上述天線模組中接收天線間之隔離度特性之再一例之模擬結果。 圖27係顯示上述隔離度處理之其他構成例之說明圖。 圖28係顯示圖1所示之天線元件之又一構成例之立體圖。 圖29係顯示圖28所示之天線元件之電壓駐波比(VSWR)特性、與60 GHz之方位角平面及仰角平面之放射特性之模擬結果。 圖30係顯示圖1所示之天線元件之又一構成例之立體圖。 圖31係顯示圖30所示之天線元件之電壓駐波比(VSWR)特性、與60 GHz之方位角平面及仰角平面之放射特性之模擬結果。 圖32係顯示圖1所示之天線元件之又一構成例之立體圖。 圖33係顯示圖32所示之天線元件之電壓駐波比(VSWR)特性、與60 GHz之方位角平面及仰角平面之放射特性之模擬結果。 圖34係顯示圖1所示之天線元件之又一構成例之立體圖。 圖35係顯示圖34所示之天線元件之電壓駐波比(VSWR)特性、與60 GHz之方位角平面及仰角平面之放射特性之模擬結果。 圖36係顯示圖1所示之天線元件之又一構成例之立體圖。 圖37係顯示圖36所示之天線元件之電壓駐波比(VSWR)特性、與60 GHz之方位角平面及仰角平面之放射特性之模擬結果。 圖38係顯示圖1所示之天線元件之又一構成例之立體圖。 圖39係顯示圖38所示之天線元件之電壓駐波比(VSWR)特性、與60 GHz之方位角平面及仰角平面之放射特性之模擬結果。 圖40係顯示與第2實施形態對應之天線模組之一例之圖。 圖41係顯示圖40所示之天線模組之隔離度特性之圖。 圖42係第4實施形態之天線模組之透過立體圖。 圖43係第4實施形態之天線模組之平面圖。 圖44係顯示第4實施形態之天線模組之隔離度特性之圖。 圖45係第4實施形態之變化例之天線模組之透過立體圖。 圖46係顯示第4實施形態之變化例之天線模組之隔離度特性之圖。 FIG. 1 is a perspective view of an antenna element of the first embodiment of the present technology. FIG. 2 is a side sectional view of the antenna element. FIG. 3 is a simulation result showing an example of the voltage-to-wave ratio of the antenna element. FIG. 4 is a simulation result showing the radiation characteristics of the antenna element in the azimuth plane at 60 GHz. FIG. 5 is a simulation result showing the radiation characteristics of the antenna element in the elevation plane at 60 GHz. FIG. 6 is a perspective view of the antenna element of Comparative Example 1. FIG. 7 is a side sectional view of the antenna element of Comparative Example 1. FIG. 8 is a simulation result showing an example of the voltage-to-wave ratio of the antenna element of Comparative Example 1. FIG. 9 shows the simulation result of the radiation characteristic of the antenna element of Comparative Example 1 in the azimuth plane at 60 GHz. FIG. 10 shows the simulation result of the radiation characteristic of the antenna element of Comparative Example 1 in the elevation plane at 60 GHz. FIG. 11 is a perspective view of the antenna element of Comparative Example 2. FIG. 12 is a side view of the antenna element of Comparative Example 2. FIG. 13 shows the simulation result of an example of the voltage-to-wave ratio of the antenna element of Comparative Example 2. FIG. 14 shows the simulation result of the radiation characteristic of the antenna element of Comparative Example 2 in the azimuth plane at 60 GHz. FIG. 15 shows the simulation result of the radiation characteristic of the antenna element of Comparative Example 2 in the elevation plane at 60 GHz. FIG. 16 is a simulation result comparing the antenna characteristics and directivity of the antenna element shown in FIG. 1 and the antenna element of Comparative Example 1 shown in FIG. 6. FIG. 17 is a perspective view of the antenna module of the second embodiment of the present technology. FIG. 18 is a plan view of the antenna module. FIG. 19 is a block diagram showing the circuit structure of the antenna module. FIG. 20 is a perspective view showing the structure of the antenna module without isolation treatment, which is the same as FIG. 17. FIG. 21 is a simulation result showing the isolation characteristics of a receiving antenna relative to a transmitting antenna in the antenna module. FIG. 22 is a simulation result showing the isolation characteristics of another receiving antenna relative to a transmitting antenna in the antenna module. FIG. 23 is a simulation result showing the isolation characteristic of another receiving antenna relative to the transmitting antenna in the above antenna module. FIG. 24 is a simulation result showing an example of the isolation characteristic between receiving antennas in the above antenna module. FIG. 25 is a simulation result showing another example of the isolation characteristic between receiving antennas in the above antenna module. FIG. 26 is a simulation result showing another example of the isolation characteristic between receiving antennas in the above antenna module. FIG. 27 is an explanatory diagram showing another configuration example of the above isolation processing. FIG. 28 is a three-dimensional diagram showing another configuration example of the antenna element shown in FIG. 1. FIG. 29 shows the simulation results of the voltage station wave ratio (VSWR) characteristics of the antenna element shown in FIG. 28 and the radiation characteristics of the azimuth plane and elevation plane at 60 GHz. FIG. 30 shows a three-dimensional diagram of another configuration example of the antenna element shown in FIG. 1. FIG. 31 shows the simulation results of the voltage station wave ratio (VSWR) characteristics of the antenna element shown in FIG. 30 and the radiation characteristics of the azimuth plane and elevation plane at 60 GHz. FIG. 32 shows a three-dimensional diagram of another configuration example of the antenna element shown in FIG. 1. FIG. 33 shows the simulation results of the voltage station wave ratio (VSWR) characteristics of the antenna element shown in FIG. 32 and the radiation characteristics of the azimuth plane and elevation plane at 60 GHz. FIG. 34 is a three-dimensional diagram showing another configuration example of the antenna element shown in FIG. 1. FIG. 35 is a three-dimensional diagram showing the voltage-to-sound ratio (VSWR) characteristic of the antenna element shown in FIG. 34, and the simulation results of the radiation characteristics in the azimuth plane and the elevation plane at 60 GHz. FIG. 36 is a three-dimensional diagram showing another configuration example of the antenna element shown in FIG. 1. FIG. 37 is a three-dimensional diagram showing the voltage-to-sound ratio (VSWR) characteristic of the antenna element shown in FIG. 36, and the simulation results of the radiation characteristics in the azimuth plane and the elevation plane at 60 GHz. FIG. 38 is a three-dimensional diagram showing another configuration example of the antenna element shown in FIG. 1. FIG. 39 shows the simulation results of the voltage station wave ratio (VSWR) characteristics of the antenna element shown in FIG. 38 and the radiation characteristics in the azimuth plane and elevation plane at 60 GHz. FIG. 40 shows an example of an antenna module corresponding to the second embodiment. FIG. 41 shows the isolation characteristics of the antenna module shown in FIG. 40. FIG. 42 shows a three-dimensional image of the antenna module of the fourth embodiment. FIG. 43 shows a plan view of the antenna module of the fourth embodiment. FIG. 44 shows the isolation characteristics of the antenna module of the fourth embodiment. FIG. 45 shows a three-dimensional image of the antenna module of a variation of the fourth embodiment. FIG. 46 is a diagram showing the isolation characteristics of the antenna module of a variation of the fourth embodiment.
10:介電層 10: Dielectric layer
10a:第1主面/表面 10a: 1st main surface/surface
21:第1導體層 21: 1st conductor layer
21L:長邊 21L: Long side
21S:短邊 21S: Short side
22:第2導體層 22: Second conductor layer
22a:開口部 22a: Opening
31:第1層間連接部/層間連接部 31: 1st inter-layer connection/inter-layer connection
32:第2層間連接部/層間連接部 32: Second inter-layer connection/inter-layer connection
100:天線元件 100: Antenna components
211:第1區域 211: Area 1
212:第2區域 212: Area 2
X,Y,Z:軸 X,Y,Z: axis
Claims (24)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023105712 | 2023-06-28 | ||
| JP2023-105712 | 2023-06-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW202504165A true TW202504165A (en) | 2025-01-16 |
Family
ID=93938390
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW113123041A TW202504165A (en) | 2023-06-28 | 2024-06-21 | Antenna components, antenna arrays and antenna modules |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN121359317A (en) |
| TW (1) | TW202504165A (en) |
| WO (1) | WO2025004928A1 (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5654724A (en) * | 1995-08-07 | 1997-08-05 | Datron/Transco Inc. | Antenna providing hemispherical omnidirectional coverage |
| KR100683872B1 (en) * | 2005-11-23 | 2007-02-15 | 삼성전자주식회사 | Monopole antenna capable of implementing MIO systems |
| JP3883565B1 (en) * | 2006-02-28 | 2007-02-21 | Tdk株式会社 | Chip antenna |
| JP7315043B2 (en) | 2017-11-29 | 2023-07-26 | Tdk株式会社 | patch antenna |
-
2024
- 2024-06-19 WO PCT/JP2024/022207 patent/WO2025004928A1/en active Pending
- 2024-06-19 CN CN202480041468.7A patent/CN121359317A/en active Pending
- 2024-06-21 TW TW113123041A patent/TW202504165A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2025004928A1 (en) | 2025-01-02 |
| CN121359317A (en) | 2026-01-16 |
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