TW202407066A - Polishing liquid, polishing method, component manufacturing method, and semiconductor component manufacturing method - Google Patents

Abstract

Provided is a polishing liquid for polishing a member to be polished, said polishing liquid containing abrasive grains which include a cerium oxide, wherein the member to be polished contains a resin and particles which include a silicon compound. Also provided is a polishing method in which the polishing liquid is used to polish a member to be polished that contains a resin and particles including a silicon compound. Also provided is a component manufacturing method in which a member to be polished that has been polished by the polishing method is used to obtain a component. Also provided is a semiconductor component manufacturing method in which a member to be polished that has been polished by the polishing method is used to obtain a semiconductor component.

Description

Polishing liquid, polishing method, component manufacturing method and semiconductor component manufacturing method

The present disclosure relates to a polishing liquid, a polishing method, a manufacturing method of components, a manufacturing method of semiconductor components, etc.

In recent years, in the manufacturing steps of electronic devices, processing technology for high density, miniaturization, etc. has become increasingly important. CMP (Chemical Mechanical Polishing) technology, one of the processing technologies, is used in the formation of shallow trench isolation (Shallow Trench Insulation: STI), planarization of pre-metal insulating materials or interlayer insulating materials, and Technology required for the formation of plugs or embedded metal wiring, etc. As a polishing liquid used for CMP, a polishing liquid containing abrasive grains containing cerium oxide is known (for example, refer to the following Patent Documents 1 and 2).

[Patent Document 1] Japanese Patent Application Publication No. 10-106994 [Patent Document 2] Japanese Patent Application Publication No. 08-022970

The present inventors focused on the case where a polished member containing resin and particles containing a silicon compound is polished using a polishing liquid, and found that when polishing such a member to be polished, the particles containing the silicon compound sometimes fall off and are removed from the polished member. There are peeling marks on the polishing surface, and the polished surface cannot be flattened.

An object of the present disclosure is to provide a polishing fluid that can suppress the occurrence of traces of falling off of particles containing resin and silicon compounds during polishing of a member to be polished. Another object of the present disclosure is to provide a grinding method using the aforementioned grinding liquid. Another object of the present disclosure is to provide a method of manufacturing a component using the aforementioned grinding method. Another object of the present disclosure is to provide a method for manufacturing a semiconductor device using the aforementioned grinding method.

The present disclosure is related to the following [1] to [20] and the like in several aspects. [1] A polishing liquid for polishing a member to be polished, the polishing liquid containing abrasive grains containing cerium oxide, the member to be polished containing resin and particles containing a silicon compound. [2] The polishing fluid according to [1], wherein the particles contain silicon oxide. [3] The polishing liquid according to [1] or [2], which further contains an ether compound having a hydroxyl group. [4] The polishing liquid according to [3], wherein the ether compound contains an alkoxyalcohol. [5] The polishing liquid according to [4], wherein the ether compound contains an alkoxy alcohol having a molecular weight of less than 200. [6] The polishing liquid according to [4] or [5], wherein the alkoxy alcohol contains a compound having an alkoxy group having 1 to 5 carbon atoms. [7] The polishing liquid according to any one of [4] to [6], wherein the alkoxy alcohol contains 1-propoxy-2-propanol. [8] The polishing liquid according to any one of [4] to [7], wherein the alkoxy alcohol contains 3-methoxy-3-methyl-1-butanol. [9] The polishing liquid according to any one of [4] to [8], wherein the content of the alkoxy alcohol is more than 0% by mass and less than 5% by mass (based on the total mass of the polishing liquid) ( Or 0.2~0.8 mass%). [10] The polishing liquid according to any one of [3] to [9], wherein the ether compound contains a polyether. [11] The polishing liquid according to [10], wherein the polyether contains polyglycerol. [12] The polishing fluid as described in [10] or [11], wherein the content of the polyether is more than 0% by mass and less than 10% by mass (or 0.5 to 3% by mass, based on the total mass of the polishing fluid). ). [13] The polishing fluid according to any one of [1] to [12], wherein the content of the abrasive grains is 0.01 to 10 mass% (or 0.5 to 2 mass% based on the total mass of the polishing fluid). ). [14] The polishing liquid according to any one of [1] to [13], further containing an organic acid component. [15] The polishing liquid according to any one of [1] to [14], further containing at least one selected from the group consisting of ammonium cations and ammonia. [16] The polishing liquid according to any one of [1] to [15], whose pH is 3.00 to 13.00 (or 9.00 to 11.00). [17] A polishing method for polishing a member to be polished containing resin and particles containing a silicon compound using the polishing liquid according to any one of [1] to [16]. [18] The polishing method according to [17], wherein the resin contains an epoxy resin. [19] A method of manufacturing a component, using a member to be polished by the polishing method described in [17] or [18] to obtain a component. [20] A method of manufacturing a semiconductor device, which uses a member to be polished by the polishing method described in [17] or [18] to obtain a semiconductor device. [Effects of the invention]

According to one aspect of the present disclosure, it is possible to provide a polishing fluid that can suppress the occurrence of traces of falling off of particles containing resin and silicon compounds during polishing of a member to be polished. According to another aspect of the present disclosure, a polishing method using the aforementioned polishing liquid can be provided. According to another aspect of the present disclosure, a method of manufacturing a component using the aforementioned grinding method can be provided. According to another aspect of the present disclosure, a method for manufacturing a semiconductor device using the aforementioned grinding method can be provided. According to another aspect of the present disclosure, an application of a polishing fluid in polishing a component to be polished containing resin and particles containing silicon compounds can be provided.

Hereinafter, embodiments of the present disclosure will be described. However, the present disclosure is not limited to the following embodiments.

In this specification, the numerical range indicated by "～" indicates a range including the numerical values written before and after "～" as the minimum value and the maximum value, respectively. "A and above" in the numerical range refers to A and the range exceeding A. "A or less" in the numerical range refers to A and the range below A. Within the numerical range described in stages in this specification, the upper limit or lower limit of the numerical range in a certain stage can be arbitrarily combined with the upper limit or lower limit of the numerical range in other stages. Within the numerical range described in this specification, the upper limit or lower limit of the numerical range may be replaced by the values shown in the examples. "A or B" may include either A or B, or both. Unless otherwise specified, the materials exemplified in this specification can be used individually by one type or in combination of two or more types. Regarding the content of each component in the composition, when there are multiple substances corresponding to each component in the composition, unless otherwise specified, it refers to the total amount of the plurality of substances present in the composition. The term "film" includes a structure having a shape formed on a part of the surface in addition to a structure having a shape formed on the entire surface when viewed from a top view. The term "step" does not only include independent steps. Even if it cannot be clearly distinguished from other steps, it is also included in this term as long as the expected effect of the step is achieved. Unless otherwise specified, "alkyl" may be linear, branched, or cyclic. "Abrasive grains" refer to a plurality of aggregated particles, but for convenience, one particle constituting an abrasive grain is sometimes called an abrasive grain.

＜Grinding fluid＞ The polishing fluid of this embodiment is a polishing fluid used for polishing a member to be polished, and the member to be polished contains resin and particles containing a silicon compound. The polishing liquid of this embodiment contains abrasive grains containing cerium oxide. The polishing liquid of this embodiment can be used as a CMP polishing liquid.

According to the polishing fluid of this embodiment, when polishing a member to be polished containing particles containing resin and a silicon compound (compound containing silicon), it is possible to suppress the occurrence of falling marks caused by the particles falling off the surface to be polished. The polishing fluid according to this embodiment can suppress the occurrence of peeling marks with a short diameter of 1.0 μm or more, for example, in the evaluation described in the examples described below. The reason why the occurrence of peeling marks can be suppressed is not clear, but the present inventors speculate that it is as follows. That is, the abrasive grains containing cerium oxide are not limited to polishing the member to be polished by physical action, but chemically polishing the member to be polished by forming a chemical bond with the silicon compound, thereby suppressing the occurrence of peeling marks, and The component to be ground is ground. However, the main reason why the effect can be obtained is not limited to this content. The short diameter of the peeling mark may be 0.2 μm or more, 0.6 μm or more, or 1.0 μm or more.

In recent years, from the viewpoint of high speed, low power consumption, and large capacity of electronic devices, 2.1D integrated circuits, 2.5D integrated circuits, 3D integrated circuits, etc. are being developed, and chip-to-chip (on-chip) wafer), wafer-to-wafer (wafer on wafer), chip-to-wafer (wafer on chip) and other connection steps, and based on WLP (Wafer-Level Packaging: wafer level packaging), PLP (Panel- Level Packaging (panel-level packaging) and other semiconductor packaging manufacturing steps are getting more and more attention. In these steps, in order to obtain a good connecting surface (here, not only the directly connected surface, but also the surface that becomes the base when connected through other members is also called the "connected surface"), it is necessary to flatten the polished member. Particles containing resin (such as epoxy resin) and silicon compounds (such as silicon oxide) may be present on the surface to be polished. For example, the member to be polished may include a base material portion containing resin and particles containing a silicon compound. According to one aspect of the polishing fluid of this embodiment, the polished members can be appropriately polished.

Examples of the resin include epoxy resin, phenol resin, acrylic resin, methacrylic resin, novolac resin, polyester (unsaturated polyester and polyester not corresponding to unsaturated polyester), and polyimide. , polyamide imide, polyhydroxystyrene, polybenzoethazole (PBO), precursor of polybenzoethazole, polyallyl ether, heterocyclic resin (excluding resins exemplified above) )wait. Examples of the "heterocyclic ring-containing resin" include pyrrole ring-containing resin, pyridine ring-containing resin, imidazole ring-containing resin, and the like. The member to be polished may contain at least one of these as a main component. The member to be ground may include at least one selected from the group consisting of epoxy resin, polyimide, polybenzoethazole, and precursors of polybenzoethazole.

Examples of the silicon compound of the particles include silicon oxide (for example, SiO ₂ ), SiOC, and silicon nitride (for example, SiN). The particles containing silicon compounds may contain silicon oxide. In a cross section of a member to be polished containing particles containing a resin and a silicon compound, the short diameter of the particles or the ratio of the area occupied by the particles (based on the entire cross section) may be within the following ranges. The short diameter of the particles may be 0.01 μm or more, 0.2 μm or more, 0.6 μm or more, or 1.0 μm or more. The short diameter of the particles may be 100 μm or less, 50 μm or less, 25 μm or less, or 15 μm or less. From these viewpoints, the short diameter of the particles may be 0.01 to 100 μm. The proportion of area can be more than 1%, more than 15%, more than 30%, more than 45% or more than 60%. The proportion of area can be below 99%, below 90%, below 80% or below 70%. From these viewpoints, the ratio of area may be 1 to 99%.

According to one aspect of the polishing fluid of this embodiment, the polishing speed of metal materials can also be increased. Examples of the metal material include copper, cobalt, tantalum, aluminum, titanium, tungsten, manganese, and the like. Examples of metal materials include wiring materials, barrier metal materials, and the like. Examples of metal materials include copper-based metals (metal copper (element metal), copper compounds, etc.), cobalt-based metals (metal cobalt (element metal), etc.), tantalum-based metals (metal tantalum (element metal), tantalum nitride etc.), aluminum-based metals (metal aluminum (element metal), etc.), titanium-based metals (metal titanium (element metal), titanium nitride, etc.), tungsten-based metals (metal tungsten (element metal), etc.), manganese-based metals ( Metal manganese (element metal), etc.), etc. According to one aspect of the polishing liquid according to this embodiment, in the evaluation described in the examples described below, it is possible to obtain a copper polishing rate of, for example, 0.05 μm/min or more (preferably 0.35 μm/min or more).

On the surface to be polished of the above-mentioned member to be polished, metal materials (for example, copper-based metals) other than resin and particles containing silicon compounds may be present. For example, the member to be polished may include: a base material part containing resin and particles containing a silicon compound; and a metal part disposed in an opening formed in the base material part (along the thickness direction of the member to be polished (thickness direction of the base material part) ) extending opening) and containing metal material. Furthermore, the member to be polished may include a metal part extending in the thickness direction of the member to be polished (thickness direction of the base material part) and containing a metal material; and a base material part (a base containing particles containing resin and a silicon compound). metal part), covering at least part (part or all) of the outer circumference of the metal part. The member to be polished may include at least one (for example, a plurality of) metal parts. The member to be polished may be obtained by supplying the constituent material of the metal part through an opening formed in the base part, or may be obtained by supplying the constituent material of the base part so as to cover at least part of the outer periphery of the metal part. According to one aspect of the polishing fluid of this embodiment, the polished members can be appropriately polished. The interface shape of the metal part perpendicular to the thickness direction of the member to be polished may be circular, and the diameter of the metal part may be 1 to 200 μm. The distance between adjacent metal parts may be 1 to 200 μm.

FIG. 1 is a cross-sectional view schematically showing an example of a member to be polished, and shows a cross section parallel to the surface to be polished. The member 10 to be polished shown in FIG. 1 includes a base material part 12 and a metal part 14 arranged on an opening formed in the base material part 12. The base material part 12 contains a resin 12a and particles 12b containing a silicon compound. However, the size and number of each member (particle 12b, metal part 14, etc.), the size ratio between members, etc. are not limited to what is shown in the figure.

The polishing liquid of this embodiment contains abrasive grains containing cerium oxide. The abrasive grains may contain one type of particles or a plurality of types of particles. Examples of the constituent materials of the abrasive grains other than cerium oxide include inorganic materials such as silicon dioxide (SiO ₂ ), alumina, zirconium oxide, titanium dioxide, germanium dioxide, and silicon carbide. The polishing liquid of this embodiment does not need to contain aluminum oxide as a constituent material of the abrasive grains. Based on the total mass of the grinding fluid, the alumina content may be 0.1 mass% or less, less than 0.1 mass%, 0.01 mass% or less, 0.001 mass% or less, or substantially 0 mass%.

From the viewpoint of easily suppressing the occurrence of falling marks of particles containing silicon compounds and from the viewpoint of easily increasing the polishing speed of metal materials, the entire abrasive grain (the entire abrasive grain contained in the polishing fluid or the entire particle constituting the abrasive grain) As a basis, the content of cerium oxide in the abrasive grains can be more than 90 mass%, more than 93 mass%, more than 95 mass%, more than 95 mass%, more than 98 mass%, more than 99 mass%, more than 99.5 mass% or 99.9 Quality% or more. The abrasive grains may be substantially composed of cerium oxide (substantially 100% by mass of the abrasive grains may be in the form of cerium oxide).

The average particle diameter D50 or D80 of the abrasive grains may be within the following range. The average particle diameters D50 and D80 of the abrasive grains refer to the 50% particle diameter and the 80% particle diameter of the volume-based cumulative distribution, and can be measured, for example, by a laser diffraction particle size distribution meter. The average particle size of the abrasive grains can be adjusted by natural sedimentation, pulverization, dispersion, filtration, etc. For example, the particle size adjustment can be performed after mixing the components of the polishing fluid.

From the viewpoint of easily suppressing the occurrence of detachment marks of particles containing silicon compounds and from the viewpoint of easily increasing the polishing speed of metal materials, the average particle diameter D50 of the abrasive grains may be 10 nm or more, 50 nm or more, 70 nm or more, 100 nm or more, or 150 nm. Above, above 150nm, above 200nm, above 250nm, above 300nm, above 320nm or above 340nm. From the viewpoint of easily suppressing polishing scratches, the average particle diameter D50 of the abrasive grains may be 1000 nm or less, 800 nm or less, 600 nm or less, 500 nm or less, 450 nm or less, 400 nm or less, or 350 nm or less. From these viewpoints, the average particle diameter D50 of the abrasive grains may be 10 to 1000 nm, 50 to 800 nm, 100 to 500 nm, or 200 to 400 nm.

From the viewpoint of easily suppressing the occurrence of falling off traces of particles containing silicon compounds and from the viewpoint of easily increasing the polishing speed of metal materials, the average particle diameter D80 of the abrasive grains may be 50 nm or more, 100 nm or more, 200 nm or more, 300 nm or more, or 350 nm. Above, above 400nm, above 450nm, above 500nm, above 550nm or above 600nm. From the viewpoint of easily suppressing polishing scratches, the average particle diameter D80 of the abrasive grains may be 1200 nm or less, 1100 nm or less, 1000 nm or less, 900 nm or less, 800 nm or less, 750 nm or less, 700 nm or less, or 650 nm or less. From these viewpoints, the average particle diameter D80 of the abrasive grains may be 50 to 1200 nm, 100 to 1000 nm, 300 to 800 nm or 500 to 700 nm.

Based on the total mass of the polishing fluid, the content of abrasive particles can be within the following ranges. From the viewpoint of easily suppressing the occurrence of falling off traces of particles containing silicon compounds and from the viewpoint of easily increasing the polishing speed of metal materials, the content of the abrasive grains may be 0.01 mass % or more, 0.05 mass % or more, 0.1 mass % or more, 0.3 mass % or more. Mass % or more, 0.5 mass % or more, 0.5 mass % or more, 0.7 mass % or more, 0.8 mass % or more, 0.9 mass % or more, 1 mass % or more, 1.5 mass % or more or 2 mass % or more. From the viewpoint of easily avoiding an increase in the viscosity of the polishing fluid, aggregation of the abrasive grains, etc., the content of the abrasive grains may be 10 mass % or less, 8 mass % or less, 5 mass % or less, 4 mass % or less, or 3 mass % or less. 2 mass% or less, 1.5 mass% or less, or 1 mass% or less. From these viewpoints, the content of the abrasive grains may be 0.01 to 10 mass%, 0.1 to 5 mass%, 0.5 to 2 mass%, or 0.5 to 1.5 mass%.

(water) The polishing liquid of this embodiment may contain water. Water may be included as the remainder after removing other components from the polishing liquid. Based on the total mass of the grinding fluid, the water content can be within the following ranges. The water content may be 90 mass% or more, 91 mass% or more, 92 mass% or more, 93 mass% or more, 94 mass% or more, 94.5 mass% or more, 95 mass% or more, 95.5 mass% or more, 96 mass% or more, 97 mass% or more or 98 mass% or more. The water content may be less than 100% by mass, less than 99% by mass, less than 98% by mass, less than 97% by mass, less than 96% by mass, or less than 95.5% by mass. From these viewpoints, the water content may be 90 mass% or more and less than 100 mass%, 90 to 99 mass%, or 95 to 99 mass%.

(Additive) The polishing liquid of this embodiment may contain abrasive grains and components other than water. Examples of such components include an ether compound having a hydroxyl group (hereinafter, referred to as "ether compound A" as appropriate), an ether compound not having a hydroxyl group, an acid component, ammonia, a preservative, an alkaline hydroxide, and a peroxide. Oxides, organic solvents, surfactants, defoaming agents, etc. The polishing liquid of this embodiment may not contain at least one of these components.

The polishing liquid of this embodiment may contain an ether compound having a hydroxyl group (ether compound A) from the viewpoint of easily suppressing the occurrence of falling marks of particles containing a silicon compound and from the viewpoint of easily increasing the polishing speed of metal materials. The ether compound having a hydroxyl group is a compound having at least one hydroxyl group and at least one ether group. The "ether group" in the ether compound A does not include the "-O-" structure in the hydroxyl group (hydroxyl group), carboxyl group, carboxylate group, ester group, sulfo group and phosphate group. The hydroxyl group does not include the OH group included in the carboxyl group, sulfo group and phosphate group.

The ether compound A may contain a compound in which the number of hydroxyl groups is within the following range, from the viewpoint of easily suppressing the occurrence of detachment traces of particles containing the silicon compound and from the viewpoint of easily increasing the polishing speed of the metal material. The number of hydroxyl groups is 1 or more, and may be 2 or more, 3 or more, 4 or more, 5 or more, 6 or more, 8 or more, 9 or more, 10 or more, 11 or more or 12 or more. The number of hydroxyl groups may be 20 or less, 15 or less, 12 or less, 11 or less, 10 or less, 9 or less, 8 or less, 6 or less, 5 or less, 4 or less, 3 or less or 2 or less. From these viewpoints, the number of hydroxyl groups may be 1 to 20, 1 to 10, 1 to 5, 1 to 3 or 1 to 2. The ether compound A may contain a compound having one hydroxyl group, or a compound having two or more hydroxyl groups, from the viewpoint of easily suppressing the occurrence of detachment traces of particles containing the silicon compound and from the viewpoint of easily increasing the polishing speed of the metal material. The compound may include a compound having one hydroxyl group and a compound having two or more hydroxyl groups.

The ether compound A may contain a compound in which the number of ether groups is within the following range, from the viewpoint of easily suppressing the occurrence of detachment traces of particles containing a silicon compound and from the viewpoint of easily increasing the polishing speed of the metal material. The number of ether groups is 1 or more, and may be 2 or more, 3 or more, 4 or more, 5 or more, 6 or more, 8 or more or 9 or more. The number of ether groups may be 20 or less, 15 or less, 12 or less, 11 or less, 10 or less, 9 or less, 8 or less, 6 or less, 5 or less, 4 or less, 3 or less or 2 or less. From these viewpoints, the number of ether groups may be 1 to 20, 1 to 10, 1 to 5, 1 to 3 or 1 to 2. The ether compound A may contain a compound having one ether group, or may contain a compound having two or more ether groups, from the viewpoint of easily suppressing the occurrence of detachment traces of particles containing a silicon compound and from the viewpoint of easily increasing the polishing speed of the metal material. The compound having one ether group may also include a compound having one ether group and a compound having two or more ether groups.

The ether compound A may contain an alkoxy alcohol from the viewpoint of easily suppressing the occurrence of detachment traces of particles containing the silicon compound and from the viewpoint of easily increasing the polishing speed of the metal material. Examples of the alkoxy alcohol include 2-methoxyethanol, 2-ethoxyethanol, 2-(2-methoxy)ethoxyethanol, and 2-(2-butoxyethoxy)ethanol. , 2-propoxyethanol, 2-butoxyethanol, 3-methoxy-3-methyl-1-butanol, 2-(methoxymethoxy)ethanol, 2-isopropoxyethanol , 2-butoxyethanol, 2-isoamyloxyethanol, 1-propoxy-2-propanol, 3-methoxy-3-methyl-1-butanol, 3-methoxy-1 -Butanol, 3-methoxy-3-methylbutanol, 1-methoxy-2-butanol, glycol monoether, etc. From the viewpoint of easily suppressing the occurrence of detachment traces of particles containing silicon compounds and from the viewpoint of easily increasing the polishing speed of metal materials, the alkoxy alcohol may contain carbon numbers of 1 to 5, 1 to 4, 1 to 3, Compounds with 1 to 2 or 2 to 3 alkoxy groups. The alkoxy alcohol may contain 1-propoxy-2-propanol, or 3- Methoxy-3-methyl-1-butanol.

The ether compound A may contain a polyether, or may contain an alkoxy alcohol and a polyether, from the viewpoint of easily suppressing the occurrence of detachment traces of particles containing a silicon compound and from the viewpoint of easily increasing the polishing speed of the metal material. Examples of the polyether include polyglycerol, polysaccharides, polyalkylene glycol, polyoxypropylene polyglycerol ether, polyoxyethylene polyglycerol ether, and 1,4-di(2-hydroxyethoxy). Benzene, 2,2-bis(4-polyoxyethyleneoxyphenyl)propane, 2,2-bis(4-polyoxypropyleneoxyphenyl)propane, ethylene glycol monophenyl ether, diethylene glycol mono Phenyl ether, polyoxyalkylene monophenyl ether, propylene glycol monophenyl ether, polyoxypropylene monomethylphenyl ether, polyethylene glycol monomethyl ether, neopentylerythritol polyoxyethylene ether, ethylene glycol monoene Propyl ether, polyoxyethylene monoallyl ether, alkyl glucoside, etc. As polyethers, compounds different from alkoxyalcohols can be used. The polyether may contain polyglycerol from the viewpoint of easily suppressing the occurrence of detachment traces of particles containing a silicon compound and from the viewpoint of easily increasing the polishing speed of the metal material.

The ether compound A may contain polyglycerol in which the average degree of polymerization of glycerol is within the following range, from the viewpoint of easily suppressing the occurrence of detachment traces of particles containing the silicon compound and from the viewpoint of easily increasing the polishing speed of the metal material. The average degree of polymerization may be above 3, above 4, above 5, above 8, or above 10. The average degree of polymerization may be 100 or less, 50 or less, 30 or less, 20 or less, 15 or less, 12 or less, or 10 or less. From these viewpoints, the average degree of polymerization may be 3 to 100, 5 to 50, 8 to 20, 5 to 15, or 8 to 15.

The ether compound A may contain polyglycerol having a hydroxyl value in the following range from the viewpoint of easily suppressing the occurrence of traces of falling off of particles containing a silicon compound and from the viewpoint of easily increasing the polishing speed of the metal material. The hydroxyl value may be above 100, above 200, above 300, above 400, above 500, above 600, above 700, above 800, above 850, or above 870. The hydroxyl value may be 2000 or less, 1500 or less, 1200 or less, 1100 or less, 1000 or less, 950 or less, 930 or less or 910 or less. From these viewpoints, the hydroxyl value may be 100-2000, 300-1500, 500-1200 or 800-1000.

The ether compound A may contain a compound having one hydroxyl group and one ether group from the viewpoint of easily suppressing the occurrence of peeling traces of particles containing the silicon compound and from the viewpoint of easily increasing the polishing speed of the metal material. From the viewpoint of easily suppressing the occurrence of traces of falling off of the particles containing the silicon compound and from the viewpoint of easily increasing the polishing speed of the metal material, the ether compound A may include a compound having an ether group having an alkyl group having a hydroxyl group as a substituent. The group is bonded to an unsubstituted alkyl group, and the compound may be a compound having one hydroxyl group and one ether group.

The ether compound A may contain a compound having the following molecular weight from the viewpoint of easily suppressing the occurrence of detachment traces of particles containing the silicon compound and from the viewpoint of easily increasing the polishing speed of the metal material. The molecular weight may be above 50, above 80, above 100, above 110, above 115, above 118, above 120, above 150, above 190, above 200, above 200, above 300, above 500, above 700, or above 750. The molecular weight can be below 3000, below 2000, below 1500, below 1200, below 1000, below 800, below 750, below 700, below 500, below 300, below 200, below 200, below 190, below 150, or below 120. From these viewpoints, the molecular weight may be 50 to 3000, 80 to 1000, 100 to 500, 100 to 200, or more than 100 and less than 200. The ether compound A may comprise, for example, an alkoxyalcohol with a molecular weight of less than 200.

When the ether compound A is a polymer, the weight average molecular weight (Mw) can be used as the above-mentioned molecular weight. For example, gel permeation chromatography (GPC: Gel Permeation Chromatography:) can be used to measure the weight average molecular weight under the following conditions. [condition] Sample: 20μL Standard polyethylene glycol: manufactured by Polymer Laboratories Ltd., standard polyethylene glycol (molecular weight: 106, 194, 440, 600, 1470, 4100, 7100, 10300, 12600 and 23000) Detector: Manufactured by Showa Denko K.K., RI-monitor, product name "Syodex-RI SE-61" Pump: Manufactured by Hitachi, Ltd., product name: "L-6000" Column: Manufactured by Showa Denko K.K., used by connecting the product names "GS-220HQ" and "GS-620HQ" in sequence Eluent: 0.4mol/L sodium chloride aqueous solution Measuring temperature: 30℃ Flow rate: 1.00mL/min Measurement time: 45min

From the viewpoint of easily suppressing the occurrence of detachment traces of particles containing silicon compounds and from the viewpoint of easily increasing the polishing speed of metal materials, the total mass of the ether compounds (the total mass of the ether compounds contained in the polishing liquid) or the ether compound A Based on the total mass (the total mass of the ether compound A contained in the polishing liquid), the content of the alkoxy alcohol can be within the following range. The content of the alkoxy alcohol may be more than 0 mass%, more than 5 mass%, more than 8 mass%, more than 10 mass%, more than 12 mass%, more than 15 mass%, more than 18 mass%, more than 20 mass%, 23 mass% % or more, 24 mass% or more, 25 mass% or more, 30 mass% or more, 35 mass% or more, 40 mass% or more, 45 mass% or more, 50 mass% or more, more than 50 mass%, 55 mass% or more, 60 mass% % or more, 65 mass% or more, 70 mass% or more, 75 mass% or more, 80 mass% or more, 85 mass% or more, 90 mass% or more, 95 mass% or more, 99 mass% or more or substantially 100 mass% ( The ether compound or ether compound A contained in the polishing liquid is substantially composed of an alkoxy alcohol). The content of the alkoxy alcohol may be 100 mass% or less, less than 100 mass%, 95 mass% or less, 90 mass% or less, 85 mass% or less, 80 mass% or less, 75 mass% or less, 70 mass% or less, 65 mass% % or less, 60 mass% or less, 55 mass% or less, 50 mass% or less, less than 50 mass%, 45 mass% or less, 40 mass% or less, 35 mass% or less, 30 mass% or less, 25 mass% or less or 24 mass% %the following. From these viewpoints, the content of the alkoxy alcohol may be more than 0 mass% and less than 100 mass%, 5 to 100 mass%, 5 to 95 mass%, 5 to 50 mass%, 5 to 40 mass%, 20 to 100 mass%, 20 to 95 mass%, 20 to 50 mass% or 20 to 40 mass%.

From the viewpoint of easily suppressing the occurrence of detachment marks of particles containing silicon compounds and from the viewpoint of easily increasing the polishing speed of metal materials, the content of polyether or the content of polyglycerol is determined by the total mass of the ether compound (in the polishing liquid). Based on the total mass of the ether compounds contained) or the total mass of the ether compounds A (the total mass of the ether compounds A contained in the polishing liquid), the content A may be within the following range. Content A may be more than 0% by mass, more than 5% by mass, more than 10% by mass, more than 15% by mass, more than 20% by mass, more than 25% by mass, more than 30% by mass, more than 35% by mass, more than 40% by mass, 45 Mass % or more, 50 mass % or more, 50 mass % or more, 55 mass % or more, 60 mass % or more, 65 mass % or more, 70 mass % or more, 75 mass % or more or 76 mass % or more. Content A may be 100 mass% or less, less than 100 mass%, 95 mass% or less, 92 mass% or less, 90 mass% or less, 88 mass% or less, 85 mass% or less, 82 mass% or less, 80 mass% or less, 77 Mass% or less, 76 mass% or less, 75 mass% or less, 70 mass% or less, or 65 mass% or less. From these viewpoints, content A may be more than 0 mass % and less than 100 mass %, more than 0 mass % and less than 95 mass %, 5 to 95 mass %, 50 to 95 mass %, 60 to 95 mass %, and more than 0 mass% and less than 80 mass%, 5 to 80 mass%, 50 to 80 mass% or 60 to 80 mass%.

The content of the ether compound A may be in the following range based on the total mass of the polishing liquid, from the viewpoint of easily suppressing the occurrence of detachment traces of particles containing the silicon compound and from the viewpoint of easily increasing the polishing speed of the metal material. The content of the ether compound A may be more than 0% by mass, more than 0.01% by mass, more than 0.03% by mass, more than 0.05% by mass, more than 0.08% by mass, more than 0.1% by mass, more than 0.3% by mass, more than 0.5% by mass, or more than 0.8% by mass More than 1 mass % or more, more than 1 mass %, 1.1 mass % or more, 1.2 mass % or more, 1.3 mass % or more, 1.4 mass % or more, 1.5 mass % or more or 1.6 mass % or more. The content of the ether compound A may be 10 mass% or less, 8 mass% or less, 5 mass% or less, 3 mass% or less, 2 mass% or less, 1.8 mass% or less, 1.7 mass% or less, 1.6 mass% or less, 1.5 mass% Less than 1.4% by mass, less than 1.3% by mass, less than 1.2% by mass, less than 1.1% by mass, less than 1% by mass, less than 1% by mass, less than 0.8% by mass, less than 0.5% by mass, less than 0.3% by mass, or 0.1% by mass the following. From these viewpoints, the content of the ether compound A may be more than 0 mass % and 10 mass % or less, 0.1 to 10 mass %, 0.5 to 10 mass %, 1 to 10 mass %, or more than 0 mass % and 5 mass % or less. , 0.1 to 5 mass%, 0.5 to 5 mass%, 1 to 5 mass%, more than 0 mass% and less than 3 mass%, 0.1 to 3 mass%, 0.5 to 3 mass% or 1 to 3 mass%.

From the viewpoint of easily suppressing the occurrence of detachment marks of particles containing silicon compounds and from the viewpoint of easily increasing the polishing speed of metal materials, the content of the alkoxy alcohol may be within the following range based on the total mass of the polishing liquid. The content of the alkoxy alcohol may be more than 0% by mass, more than 0.01% by mass, more than 0.03% by mass, more than 0.05% by mass, more than 0.08% by mass, more than 0.1% by mass, more than 0.15% by mass, more than 0.2% by mass, more than 0.25% by mass % or more, 0.3 mass% or more, 0.31 mass% or more, 0.33 mass% or more, 0.35 mass% or more, 0.4 mass% or more, 0.45 mass% or more, 0.5 mass% or more, 0.55 mass% or more, 0.6 mass% or more, 0.65 mass% % or more, 0.7 mass% or more, 0.8 mass% or more or 1 mass% or more. The content of the alkoxy alcohol may be 5 mass% or less, 3 mass% or less, 1 mass% or less, 0.8 mass% or less, 0.7 mass% or less, 0.65 mass% or less, 0.6 mass% or less, 0.55 mass% or less, 0.5 mass% or less. % or less, 0.45 mass% or less, 0.4 mass% or less, 0.35 mass% or less, 0.33 mass% or less, 0.31 mass% or less, 0.3 mass% or less, 0.25 mass% or less, 0.2 mass% or less, 0.15 mass% or less or 0.1 mass% %the following. From these viewpoints, the content of the alkoxy alcohol may be more than 0 mass % and less than 5 mass %, 0.01 to 5 mass %, 0.1 to 5 mass %, 0.2 to 5 mass %, and more than 0 mass % and 1 mass %. Below, 0.01 to 1 mass%, 0.1 to 1 mass%, 0.2 to 1 mass%, more than 0 mass% and less than 0.8 mass%, 0.01 to 0.8 mass%, 0.1 to 0.8 mass%, 0.2 to 0.8 mass%, more than 0 mass% and less than 0.5 mass%, 0.01 to 0.5 mass%, 0.1 to 0.5 mass%, or 0.2 to 0.5 mass%.

From the viewpoint of easily suppressing the occurrence of detachment marks of particles containing silicon compounds and from the viewpoint of easily increasing the polishing speed of metal materials, the polyether content or the polyglycerol content is based on the total mass of the polishing liquid. B can be in the following range. Content B may be more than 0% by mass, more than 0.01% by mass, more than 0.05% by mass, more than 0.1% by mass, more than 0.3% by mass, more than 0.5% by mass, more than 0.6% by mass, more than 0.8% by mass, more than 0.9% by mass or 1 Quality% or more. Content B may be 10 mass% or less, 8 mass% or less, 7 mass% or less, 6 mass% or less, 5 mass% or less, 4 mass% or less, 3 mass% or less, 2 mass% or less, 1.5 mass% or less, or 1 mass% or less. From these viewpoints, content B may be more than 0 mass% and 10 mass% or less, 0.01 to 10 mass%, 0.1 to 5 mass%, 0.5 to 3 mass%, or 0.5 to 2 mass%.

The content of the ether compound A may be in the following range with respect to 100 parts by mass of the abrasive grains from the viewpoint of easily suppressing the occurrence of detachment marks of the particles containing the silicon compound and from the viewpoint of easily increasing the polishing speed of the metal material. The content of the ether compound A may be more than 0 parts by mass, more than 1 part by mass, more than 3 parts by mass, more than 5 parts by mass, more than 8 parts by mass, more than 10 parts by mass, more than 30 parts by mass, more than 50 parts by mass, or more than 80 parts by mass More than 100 parts by mass, more than 100 parts by mass, more than 110 parts by mass, more than 120 parts by mass, more than 130 parts by mass, more than 140 parts by mass, more than 150 parts by mass or more than 160 parts by mass. The content of the ether compound A may be 1000 parts by mass or less, 800 parts by mass or less, 500 parts by mass or less, 300 parts by mass or less, 200 parts by mass or less, 180 parts by mass or less, 170 parts by mass or less, 160 parts by mass or less, 150 parts by mass Less than 140 parts by mass, less than 120 parts by mass, less than 110 parts by mass, less than 100 parts by mass, less than 100 parts by mass, less than 80 parts by mass, less than 50 parts by mass, less than 30 parts by mass, less than 10 parts by mass, 8 parts by mass or less than 5 parts by mass. From these viewpoints, the content of the ether compound A may be more than 0 parts by mass and not more than 1,000 parts by mass, 10 to 1,000 parts by mass, 50 to 1,000 parts by mass, 100 to 1,000 parts by mass, and more than 0 parts by mass but not more than 500 parts by mass. , 10 to 500 parts by mass, 50 to 500 parts by mass, 100 to 500 parts by mass, more than 0 parts by mass and less than 300 parts by mass, 10 to 300 parts by mass, 50 to 300 parts by mass or 100 to 300 parts by mass.

From the viewpoint of easily suppressing the occurrence of detachment traces of particles containing silicon compounds and from the viewpoint of easily increasing the polishing speed of metal materials, the content of the alkoxy alcohol may be in the following range with respect to 100 parts by mass of the abrasive grains. The content of the alkoxy alcohol may be more than 0 parts by mass, more than 1 part by mass, more than 3 parts by mass, more than 5 parts by mass, more than 8 parts by mass, more than 10 parts by mass, more than 15 parts by mass, more than 20 parts by mass, or more than 25 parts by mass More than 30 parts by mass, more than 35 parts by mass, more than 40 parts by mass, more than 45 parts by mass, more than 50 parts by mass, more than 55 parts by mass, more than 60 parts by mass, more than 65 parts by mass, more than 70 parts by mass, 80 parts by mass parts or more or more than 100 parts by mass. The content of the alkoxy alcohol may be 500 parts by mass or less, 300 parts by mass or less, 100 parts by mass or less, 80 parts by mass or less, 70 parts by mass or less, 65 parts by mass or less, 60 parts by mass or less, 55 parts by mass or less, 50 parts by mass or less. less than 45 parts by mass, less than 40 parts by mass, less than 35 parts by mass, less than 30 parts by mass, less than 25 parts by mass, less than 20 parts by mass, less than 15 parts by mass, less than 10 parts by mass, less than 8 parts by mass or 5 parts by mass portion or less. From these viewpoints, the content of the alkoxy alcohol may be more than 0 parts by mass and less than 500 parts by mass, 1 to 500 parts by mass, 10 to 500 parts by mass, 20 to 500 parts by mass, and more than 0 parts by mass and 100 parts by mass. Below, 1 to 100 parts by mass, 10 to 100 parts by mass, 20 to 100 parts by mass, more than 0 parts by mass and less than 80 parts by mass, 1 to 80 parts by mass, 10 to 80 parts by mass, 20 to 80 parts by mass, more than 0 Parts by mass and less than 50 parts by mass, 1 to 50 parts by mass, 10 to 50 parts by mass, or 20 to 50 parts by mass.

From the viewpoint of easily suppressing the occurrence of detachment marks of particles containing silicon compounds and from the viewpoint of easily increasing the polishing speed of metal materials, the polyether content or the polyglycerol content is, relative to 100 parts by mass of the abrasive grains, the content C It can be within the following range. Content C may be more than 0 parts by mass, more than 1 part by mass, more than 5 parts by mass, more than 10 parts by mass, more than 30 parts by mass, more than 50 parts by mass, more than 60 parts by mass, more than 80 parts by mass, more than 90 parts by mass or 100 More than parts by mass. Content C can be less than 1000 parts by mass, less than 800 parts by mass, less than 700 parts by mass, less than 600 parts by mass, less than 500 parts by mass, less than 400 parts by mass, less than 300 parts by mass, less than 200 parts by mass, less than 150 parts by mass or 100 parts by mass or less. From these viewpoints, content C may be more than 0 parts by mass and less than 1,000 parts by mass, 1 to 1,000 parts by mass, 10 to 500 parts by mass, 50 to 300 parts by mass, or 50 to 200 parts by mass.

From the viewpoint of easily suppressing the occurrence of detachment traces of particles containing a silicon compound and from the viewpoint of easily increasing the polishing speed of metal materials, the content of the alkoxy alcohol may be set relative to 100 parts by mass of polyether or 100 parts by mass of polyglycerol. Within the following range. The content of the alkoxy alcohol may be more than 0 parts by mass, more than 1 part by mass, more than 3 parts by mass, more than 5 parts by mass, more than 8 parts by mass, more than 10 parts by mass, more than 15 parts by mass, more than 20 parts by mass, or more than 25 parts by mass More than 30 parts by mass, more than 32 parts by mass, more than 33 parts by mass, more than 34 parts by mass, more than 35 parts by mass, more than 40 parts by mass, more than 45 parts by mass, more than 50 parts by mass, more than 55 parts by mass, 60 parts by mass parts or more or more than 65 parts by mass. The content of the alkoxy alcohol may be 1000 parts by mass or less, 800 parts by mass or less, 700 parts by mass or less, 600 parts by mass or less, 500 parts by mass or less, 400 parts by mass or less, 300 parts by mass or less, 200 parts by mass or less, 150 parts by mass Less than 120 parts by mass, less than 100 parts by mass, less than 80 parts by mass, less than 70 parts by mass, less than 65 parts by mass, less than 60 parts by mass, less than 55 parts by mass, less than 50 parts by mass, less than 45 parts by mass, 40 parts by mass parts by mass or less, 35 parts by mass or less, 34 parts by mass or less, 33 parts by mass or less or 32 parts by mass or less. From these viewpoints, the content of the alkoxy alcohol may be more than 0 parts by mass and less than 1000 parts by mass, 1 to 1000 parts by mass, 10 to 1000 parts by mass, more than 0 parts by mass and less than 200 parts by mass, 1 to 200 parts by mass parts, 10 to 200 parts by mass, more than 0 parts by mass and less than 100 parts by mass, 1 to 100 parts by mass, 10 to 100 parts by mass, more than 0 parts by mass and less than 50 parts by mass, 1 to 50 parts by mass or 10 to 50 parts by mass share.

In the polishing liquid of this embodiment, xanthan gum does not need to be contained as the ether compound A. Based on the total mass of the grinding fluid, the xanthan gum content may be 0.5 mass% or less, less than 0.5 mass%, 0.1 mass% or less, 0.01 mass% or less, or essentially 0 mass%.

The polishing liquid of this embodiment may contain an acid component. It is presumed that the polishing speed of the metal material is easily increased by the acid component forming a complex with the metal material and the acid component dissolving the metal material. The polishing liquid of this embodiment may contain an organic acid component or an inorganic acid component as the acid component.

Examples of the organic acid component include organic acids (excluding amino acids), organic acid esters, organic acid salts, amino acids, amino acid esters, and amino acid salts. Examples of organic acids include formic acid, acetic acid, propionic acid, butyric acid, valeric acid, 2-methylbutyric acid, n-hexanoic acid, 3,3-dimethylbutyric acid, 2-ethylbutyric acid, and 4-methylbutyric acid. Valeric acid, n-heptanoic acid, 2-methylhexanoic acid, n-octanoic acid, 2-ethylhexanoic acid, benzoic acid, glycolic acid, salicylic acid, glyceric acid, oxalic acid, malonic acid, succinic acid, 3 -Methylphthalic acid, 4-methylphthalic acid, 3-aminophthalic acid, 4-aminophthalic acid, 3-nitrophthalic acid, 4-nitrophthalic acid Dicarboxylic acid, glutaric acid, adipic acid, pimelic acid, maleic acid, phthalic acid, isophthalic acid, malic acid, tartaric acid, citric acid, p-toluenesulfonic acid, p-phenolsulfonic acid, toluene sulfonic acid, Sulfonic acid, lactic acid, itaconic acid, quinalic acid, adipic acid, etc. Examples of organic acid esters include esters of the above-mentioned organic acids. Examples of organic acid salts include ammonium salts (for example, ammonium acetate), alkali metal salts, alkaline earth metal salts, halides, and the like of the above-mentioned organic acids. Examples of amino acids include alanine, arginine, asparagine, aspartic acid, cysteine, glutamine, glutamic acid, glycine, histidine, and isoleucine. Acid, leucine, lysine, methionine, phenylalanine, proline, serine, threonine, tryptophan, tyrosine, valine, etc. Examples of the amino acid ester include esters of the above-mentioned amino acids. Examples of amino acid salts include alkali metal salts of the above-mentioned organic acids.

Examples of the inorganic acid component include inorganic acids, ammonium salts of inorganic acids, metal salts of inorganic acids (alkali metal salts, alkaline earth metal salts, etc.). Examples of inorganic acids include hydrochloric acid, sulfuric acid, nitric acid, chromic acid, and the like. Examples of ammonium salts of inorganic acids include ammonium salts of monovalent inorganic acids such as ammonium nitrate, ammonium chloride, and ammonium bromide; and ammonium salts of divalent inorganic acids such as ammonium carbonate, ammonium bicarbonate, ammonium sulfate, and ammonium persulfate. ;Ammonium salts of trivalent inorganic acids such as ammonium phosphate, ammonium hydrogenphosphate, ammonium dihydrogenphosphate, ammonium borate, etc.

From the viewpoint of easily increasing the grinding speed of the metal material, the organic acid component may include at least one selected from the group consisting of organic acids different from amino acids and amino acids, and may also include at least one selected from the group consisting of malic acid and glycerin. At least one of the group consisting of amino acids. From the viewpoint of easily increasing the grinding speed of the metal material, the inorganic acid component may include at least one selected from the group consisting of ammonium chloride, ammonium carbonate, ammonium bicarbonate, ammonium sulfate, ammonium persulfate and ammonium dihydrogen phosphate, It may also include at least one selected from the group consisting of ammonium carbonate, ammonium bicarbonate, ammonium persulfate, and ammonium dihydrogen phosphate, and may also include a group selected from the group consisting of ammonium carbonate, ammonium persulfate, and ammonium dihydrogen phosphate. At least one of the group.

From the viewpoint of easily increasing the polishing speed of metal materials, the content of the acid component may be within the following range based on the total mass of the polishing liquid. The content of the acid component may be more than 0 mass%, 0.01 mass% or more, 0.02 mass% or more, 0.05 mass% or more, 0.1 mass% or more, 0.2 mass% or more, 0.3 mass% or more, 0.4 mass% or more, 0.5 mass% or more , 0.6 mass% or more, 0.7 mass% or more, 0.8 mass% or more, 0.85 mass% or more, 0.9 mass% or more, 1 mass% or more, 1.1 mass% or more, 1.2 mass% or more, 1.3 mass% or more, 1.4 mass% or more , 1.5 mass% or more, 1.6 mass% or more, 1.7 mass% or more, 1.8 mass% or more, 1.9 mass% or more or 2 mass% or more. The content of the acid component may be 5% by mass or less, 4.5% by mass or less, 4% by mass or less, 3.5% by mass or less, 3% by mass or less, 2.5% by mass or less, 2% by mass or less, 1.9% by mass or less, or 1.8% by mass or less. , 1.7 mass% or less, 1.6 mass% or less, 1.5 mass% or less, 1.4 mass% or less, 1.3 mass% or less, 1.2 mass% or less, 1.1 mass% or less, 1 mass% or less, 0.9 mass% or less, 0.85 mass% or less , 0.8 mass% or less, 0.7 mass% or less, 0.6 mass% or less, 0.5 mass% or less, 0.4 mass% or less, 0.3 mass% or less, 0.2 mass% or less, 0.1 mass% or less, 0.05 mass% or less, 0.02 mass% or less Or less than 0.01% by mass. From these viewpoints, the content of the acid component may be more than 0 mass% and less than 5 mass%, 0.01 to 5 mass%, 0.05 to 5 mass%, more than 0 mass% and less than 2 mass%, 0.01 to 2 mass%, 0.05 to 2 mass%, more than 0 mass% and less than 1 mass%, 0.01 to 1 mass%, 0.05 to 1 mass%, more than 0 mass% and less than 0.5 mass%, 0.01 to 0.5 mass% or 0.05 to 0.5 mass%.

From the viewpoint of easily increasing the polishing speed of metal materials, the content of the organic acid component may be within the following range based on the total mass of the polishing liquid. The content of the organic acid component may be more than 0% by mass, more than 0.01% by mass, more than 0.02% by mass, more than 0.05% by mass, more than 0.1% by mass, more than 0.15% by mass, more than 0.2% by mass, more than 0.25% by mass, or more than 0.3% by mass More than 0.35 mass % or more, 0.4 mass % or more, 0.41 mass % or more, 0.45 mass % or more, 0.5 mass % or more, 0.6 mass % or more, 0.8 mass % or more or 1 mass % or more. The content of the organic acid component may be 5 mass% or less, 4 mass% or less, 3 mass% or less, 2 mass% or less, 1 mass% or less, 0.8 mass% or less, 0.6 mass% or less, 0.5 mass% or less, 0.45 mass% or less, 0.41 mass% or less, 0.4 mass% or less, 0.35 mass% or less, 0.3 mass% or less, 0.25 mass% or less, 0.2 mass% or less, 0.15 mass% or less, 0.1 mass% or less, 0.05 mass% or less or 0.02 mass% the following. From these viewpoints, the content of the organic acid component may be more than 0 mass % and not more than 5 mass %, 0.01 to 5 mass %, 0.02 to 5 mass %, 0.1 to 5 mass %, and more than 0 mass % but not more than 1 mass %. , 0.01 to 1 mass %, 0.02 to 1 mass %, 0.1 to 1 mass %, more than 0 mass % and less than 0.5 mass %, 0.01 to 0.5 mass %, 0.02 to 0.5 mass % or 0.1 to 0.5 mass %.

From the viewpoint of easily increasing the polishing speed of metal materials, the content of the inorganic acid component may be within the following range based on the total mass of the polishing liquid. The content of the inorganic acid component may be more than 0% by mass, more than 0.01% by mass, more than 0.05% by mass, more than 0.1% by mass, more than 0.2% by mass, more than 0.3% by mass, more than 0.4% by mass, more than 0.5% by mass, or more than 0.6% by mass or above, 0.7 mass % or more, 0.8 mass % or more, 0.9 mass % or more, 1 mass % or more, 1.1 mass % or more, 1.2 mass % or more, 1.3 mass % or more, 1.4 mass % or more, 1.5 mass % or more or 1.6 mass % above. The content of the inorganic acid component may be 5 mass% or less, 4.5 mass% or less, 4 mass% or less, 3.5 mass% or less, 3 mass% or less, 2.5 mass% or less, 2 mass% or less, 1.8 mass% or less, 1.6 mass% Below, 1.5 mass% or less, 1.4 mass% or less, 1.3 mass% or less, 1.2 mass% or less, 1.1 mass% or less, 1 mass% or less, 0.9 mass% or less, 0.8 mass% or less, 0.7 mass% or less, 0.6 mass% or less, 0.5 mass% or less, 0.4 mass% or less, 0.3 mass% or less, 0.2 mass% or less, or 0.1 mass% or less. From these viewpoints, the content of the inorganic acid component may be more than 0 mass % and not more than 5 mass %, 0.01 to 5 mass %, 0.1 to 5 mass %, 0.5 to 5 mass %, and more than 0 mass % but not more than 1 mass %. , 0.01 to 1 mass%, 0.1 to 1 mass%, 0.5 to 1 mass%, more than 0 mass% and less than 0.5 mass%, 0.01 to 0.5 mass% or 0.1 to 0.5 mass%.

The polishing liquid of this embodiment may contain ammonium salt. It is presumed that the ammonium salt or the ammonium cation of the ammonium salt forms a complex with the metal material, thereby easily increasing the polishing speed of the metal material. From the viewpoint of easily increasing the grinding speed of the metal material, the ammonium salt may include an ammonium salt of an inorganic acid or an ammonium salt of an organic acid.

From the viewpoint of easily increasing the grinding speed of the metal material, the ammonium salt may include at least one selected from the group consisting of ammonium salts of monovalent inorganic acids, ammonium salts of divalent inorganic acids, and ammonium salts of trivalent inorganic acids. From the viewpoint of easily increasing the grinding speed of the metal material, the ammonium salt may include at least one selected from the group consisting of ammonium chloride, ammonium carbonate, ammonium bicarbonate, ammonium sulfate, ammonium persulfate, ammonium dihydrogen phosphate, and ammonium acetate. One kind. From the viewpoint of easily increasing the polishing speed of the metal material, the ammonium salt may contain an ammonium salt different from the peroxide, or may contain a peroxide (ammonium persulfate, etc.).

From the viewpoint of easily increasing the polishing speed of the metal material, the ammonium salt may include a compound having the following molecular weight. The molecular weight can be above 50, above 60, above 70, above 75, above 78, above 80, above 90, above 100, above 110, above 120, above 130, above 140, above 150, above 180, above 200, or above 220 . The molecular weight can be below 1000, below 1000, below 800, below 500, below 300, below 250, below 230, below 220, below 200, below 180, below 150, below 140, below 130, below 120, below 110, below 100 , below 90, below 80, below 78, below 75, below 70 or below 60. From these viewpoints, the molecular weight may be 50 to 1000, 70 to 1000, 80 to 1000, 50 to 500, 70 to 500, 80 to 500, 50 to 250, 70 to 250, 80 to 250, 50 to 100, 70 ~100 or 80~100.

From the viewpoint of easily increasing the polishing speed of the metal material, the content of the ammonium salt different from the peroxide may be within the following range based on the total mass of the ammonium salt (the total mass of the ammonium salt contained in the polishing liquid). The content of the ammonium salt different from the peroxide may be more than 0% by mass, more than 1% by mass, more than 5% by mass, more than 10% by mass, more than 20% by mass, more than 30% by mass, more than 34% by mass, or more than 35% by mass More than 40 mass % or more, 41 mass % or more, 45 mass % or more, 50 mass % or more, more than 50 mass %, 60 mass % or more, 70 mass % or more, 80 mass % or more, 90 mass % or more, 95 mass % or above, 99% by mass or more or substantially 100% by mass (the ammonium salt contained in the polishing liquid is essentially composed of an ammonium salt different from the peroxide). The content of the ammonium salt different from the peroxide may be 100 mass% or less, less than 100 mass%, 99 mass% or less, 95 mass% or less, 90 mass% or less, 80 mass% or less, 70 mass% or less, 60 mass% Below, 50 mass% or less, less than 50 mass%, 45 mass% or less, 41 mass% or less, 40 mass% or less, 35 mass% or less, 34 mass% or less, 30 mass% or less, 20 mass% or less, 10 mass% or less or less than 5% by mass. From these viewpoints, the content of the ammonium salt different from the peroxide may be more than 0% by mass and less than 100% by mass, 30 to 100% by mass, 50 to 100% by mass, or 80 to 100% by mass.

When the ammonium salt contains peroxide, from the viewpoint of easily increasing the polishing speed of the metal material, the peroxide (ammonium salt) The content can be within the following range. The content of peroxide (ammonium salt) may be more than 0 mass%, more than 1 mass%, more than 5 mass%, more than 10 mass%, more than 20 mass%, more than 30 mass%, more than 40 mass%, more than 50 mass% , more than 50 mass%, more than 55 mass%, more than 59 mass%, more than 60 mass%, more than 65 mass%, more than 66 mass%, more than 70 mass%, more than 80 mass%, more than 90 mass%, more than 95 mass% , 99% by mass or more or substantially 100% by mass (the ammonium salt contained in the polishing liquid is essentially composed of peroxide). The content of peroxide (ammonium salt) can be 100 mass% or less, less than 100 mass%, 99 mass% or less, 95 mass% or less, 90 mass% or less, 80 mass% or less, 70 mass% or less, 66 mass% or less , 65 mass% or less, 60 mass% or less or 59 mass% or less. From these viewpoints, the content of peroxide (ammonium salt) may be more than 0 mass% and less than 100 mass%, 50 to 100 mass%, 60 to 100 mass%, more than 0 mass% and less than 100 mass%, 50 Mass% or more and less than 100 mass% or 60 mass% or more and less than 100 mass%.

From the viewpoint of making it easier to increase the polishing speed of metal materials, as the content of ammonium salt (the total amount of compounds corresponding to ammonium salts. The same below) or the content of ammonium salts different from peroxide, the total mass of the polishing liquid As a basis, the content D can be within the following range. Content D may be more than 0% by mass, more than 0.01% by mass, more than 0.02% by mass, more than 0.05% by mass, more than 0.1% by mass, more than 0.2% by mass, more than 0.3% by mass, more than 0.4% by mass, more than 0.45% by mass, 0.5 Mass % or more, 0.5 mass % or more, 0.6 mass % or more, 0.7 mass % or more, 0.8 mass % or more, 0.85 mass % or more, 0.9 mass % or more, 1 mass % or more, 1.1 mass % or more, 1.2 mass % or more, 1.3 Mass% or more, 1.4 mass% or more, 1.5 mass% or more or 1.6 mass% or more. Content D may be 10 mass% or less, 8 mass% or less, 5 mass% or less, 4 mass% or less, 3 mass% or less, 2 mass% or less, 1.8 mass% or less, 1.7 mass% or less, 1.6 mass% or less, 1.5 Mass% or less, 1.4 mass% or less, 1.3 mass% or less, 1.2 mass% or less, 1.1 mass% or less, 1 mass% or less, 0.9 mass% or less, 0.85 mass% or less, 0.8 mass% or less, 0.7 mass% or less, 0.6 Mass % or less, 0.5 mass % or less, 0.45 mass % or less, 0.4 mass % or less, 0.3 mass % or less, 0.2 mass % or less, 0.1 mass % or less, 0.05 mass % or less or 0.02 mass % or less. From these viewpoints, content D may be more than 0 mass% and less than 10 mass%, more than 0 mass% and less than 5 mass%, more than 0 mass% and less than 2 mass%, more than 0 mass% and less than 1 mass%, 0.01～10 mass%, 0.01～5 mass%, 0.01～2 mass%, 0.01～1 mass%, 0.1～10 mass%, 0.1～5 mass%, 0.1～2 mass%, 0.1～1 mass%, 0.3～ 10% by mass, 0.3-5% by mass, 0.3-2% by mass or 0.3-1% by mass.

When the ammonium salt contains a peroxide, from the viewpoint of easily increasing the polishing speed of the metal material, the content of the peroxide (ammonium salt) may be within the following range based on the total mass of the polishing liquid. The content of peroxide (ammonium salt) may be more than 0% by mass, more than 0.01% by mass, more than 0.05% by mass, more than 0.1% by mass, more than 0.2% by mass, more than 0.3% by mass, more than 0.4% by mass, more than 0.5% by mass , more than 0.5% by mass, more than 0.6% by mass, more than 0.65% by mass, more than 0.7% by mass, more than 0.75% by mass or more than 0.8% by mass. The content of peroxide (ammonium salt) may be 5 mass% or less, 4 mass% or less, 3 mass% or less, 2 mass% or less, 1.5 mass% or less, 1.2 mass% or less, 1 mass% or less, 0.9 mass% or less , 0.8 mass% or less, 0.75 mass% or less, 0.7 mass% or less, 0.65 mass% or less or 0.6 mass% or less. From these viewpoints, the content of peroxide (ammonium salt) may be more than 0 mass% and less than 5 mass%, 0.01 to 5 mass%, 0.1 to 5 mass%, 0.5 to 5 mass%, more than 0 mass% and 1 mass% or less, 0.01 to 1 mass%, 0.1 to 1 mass%, or 0.5 to 1 mass%.

From the viewpoint of easily increasing the polishing speed of the metal material, the content E of the ammonium salt or the ammonium salt different from the peroxide may be in the following range relative to 100 parts by mass of the abrasive grains. Content E may be more than 0 parts by mass, more than 1 part by mass, more than 2 parts by mass, more than 5 parts by mass, more than 10 parts by mass, more than 20 parts by mass, more than 30 parts by mass, more than 40 parts by mass, more than 45 parts by mass, 50 More than 60 parts by mass, more than 70 parts by mass, more than 80 parts by mass, more than 85 parts by mass, more than 90 parts by mass, more than 100 parts by mass, more than 110 parts by mass, more than 120 parts by mass, more than 130 parts by mass, 140 More than 150 parts by mass or more than 160 parts by mass. Content E can be 1000 parts by mass or less, 800 parts by mass or less, 500 parts by mass or less, 400 parts by mass or less, 300 parts by mass or less, 200 parts by mass or less, 180 parts by mass or less, 170 parts by mass or less, 160 parts by mass or less, 150 Less than 140 parts by mass, less than 130 parts by mass, less than 120 parts by mass, less than 110 parts by mass, less than 100 parts by mass, less than 90 parts by mass, less than 85 parts by mass, less than 80 parts by mass, less than 70 parts by mass, 60 Parts by mass or less, 50 parts by mass or less, 45 parts by mass or less, 40 parts by mass or less, 30 parts by mass or less, 20 parts by mass or less, 10 parts by mass or less, 5 parts by mass or less or 2 parts by mass or less. From these viewpoints, the content E may be more than 0 parts by mass and less than 1000 parts by mass, more than 0 parts by mass and less than 500 parts by mass, more than 0 parts by mass and less than 200 parts by mass, more than 0 parts by mass and less than 100 parts by mass, 1～1000 parts by mass, 1～500 parts by mass, 1～200 parts by mass, 1～100 parts by mass, 10～1000 parts by mass, 10～500 parts by mass, 10～200 parts by mass, 10～100 parts by mass, 30～ 1000 parts by mass, 30-500 parts by mass, 30-200 parts by mass or 30-100 parts by mass.

When the ammonium salt contains a peroxide, the content of the peroxide (ammonium salt) may be in the following range with respect to 100 parts by mass of the abrasive grains from the viewpoint of easily increasing the polishing speed of the metal material. The content of peroxide (ammonium salt) may be more than 0 parts by mass, more than 1 part by mass, more than 5 parts by mass, more than 10 parts by mass, more than 20 parts by mass, more than 30 parts by mass, more than 40 parts by mass, more than 50 parts by mass , 60 parts by mass or more, 65 parts by mass or more, 70 parts by mass or more, 75 parts by mass or more or 80 parts by mass or more. The content of peroxide (ammonium salt) may be 500 parts by mass or less, 400 parts by mass or less, 300 parts by mass or less, 200 parts by mass or less, 150 parts by mass or less, 120 parts by mass or less, 100 parts by mass or less, and 90 parts by mass or less. , 80 parts by mass or less, 75 parts by mass or less, 70 parts by mass or less, 65 parts by mass or less or 60 parts by mass or less. From these viewpoints, the content of the peroxide (ammonium salt) may be more than 0 parts by mass and less than 500 parts by mass, 1 to 500 parts by mass, 10 to 500 parts by mass, 50 to 500 parts by mass, and more than 0 parts by mass and 100 parts by mass or less, 1 to 100 parts by mass, 10 to 100 parts by mass or 50 to 100 parts by mass.

The polishing liquid of this embodiment may contain ammonia. It is speculated that ammonia forms a complex with the metal material, thereby easily increasing the polishing speed of the metal material. From the viewpoint of easily increasing the polishing speed of metal materials, the polishing liquid of this embodiment may contain at least one selected from the group consisting of ammonium cations and ammonia, and may also contain an ammonium salt selected from the group consisting of ammonium salts (ammonium salts of the above-mentioned inorganic acids, At least one of the group consisting of ammonium salts of the above-mentioned organic acids, etc.) and ammonia.

From the viewpoint of easily increasing the polishing speed of metal materials, the ammonia content may be within the following range based on the total mass of the polishing fluid. The ammonia content may be more than 0% by mass, more than 0.01% by mass, more than 0.03% by mass, more than 0.05% by mass, more than 0.08% by mass, more than 0.1% by mass, more than 0.12% by mass, more than 0.15% by mass, more than 0.2% by mass, 0.25 mass% or more or 0.3 mass% or more. The content of ammonia may be 5 mass% or less, 4 mass% or less, 3 mass% or less, 2 mass% or less, 1.5 mass% or less, 1 mass% or less, 0.8 mass% or less, 0.6 mass% or less, 0.5 mass% or less, 0.4% by mass or less, 0.3% by mass or less, 0.25% by mass or less, 0.2% by mass or less, 0.15% by mass or less, or 0.1% by mass or less. From these viewpoints, the ammonia content may be more than 0 mass% and less than 5 mass%, 0.01 to 5 mass%, 0.1 to 5 mass%, 0.2 to 5 mass%, more than 0 mass% and less than 2 mass%, 0.01 ~2 mass%, 0.1-2 mass%, 0.2-2 mass%, more than 0 mass% and less than 0.5 mass%, 0.01-0.5 mass%, 0.1-0.5 mass% or 0.2-0.5 mass%.

From the viewpoint of easily increasing the polishing speed of the metal material, the content of ammonia may be in the following range with respect to 100 parts by mass of the abrasive grains. The content of ammonia may be more than 0 parts by mass, more than 1 part by mass, more than 3 parts by mass, more than 5 parts by mass, more than 8 parts by mass, more than 10 parts by mass, more than 12 parts by mass, more than 15 parts by mass, more than 20 parts by mass, 25 parts by mass or more or 30 parts by mass or more. The content of ammonia can be 500 parts by mass or less, 400 parts by mass or less, 300 parts by mass or less, 200 parts by mass or less, 150 parts by mass or less, 100 parts by mass or less, 80 parts by mass or less, 60 parts by mass or less, 50 parts by mass or less, Less than 50 parts by mass, less than 40 parts by mass, less than 30 parts by mass, less than 25 parts by mass, less than 20 parts by mass, less than 15 parts by mass, less than 10 parts by mass, less than 8 parts by mass, or less than 5 parts by mass. From these viewpoints, the ammonia content may be more than 0 parts by mass and less than 500 parts by mass, 1 to 500 parts by mass, 10 to 500 parts by mass, 20 to 500 parts by mass, more than 0 parts by mass and less than 200 parts by mass, 1 ~200 parts by mass, 10-200 parts by mass, 20-200 parts by mass, more than 0 parts by mass and less than 50 parts by mass, 1-50 parts by mass, 10-50 parts by mass or 20-50 parts by mass.

From the viewpoint of easily increasing the polishing speed of the metal material, the content of ammonia may be in the following range with respect to 100 parts by mass of the ammonium salt. The content of ammonia may be more than 0 parts by mass, more than 1 part by mass, more than 5 parts by mass, more than 10 parts by mass, more than 15 parts by mass, more than 20 parts by mass, more than 25 parts by mass, more than 30 parts by mass, more than 35 parts by mass, More than 36 parts by mass, more than 40 parts by mass, more than 50 parts by mass, more than 60 parts by mass, more than 80 parts by mass, more than 100 parts by mass, more than 150 parts by mass, more than 200 parts by mass, more than 300 parts by mass, more than 500 parts by mass, More than 1000 parts by mass, more than 1500 parts by mass or more than 2000 parts by mass. The content of ammonia can be less than 2000 parts by mass, less than 1500 parts by mass, less than 1000 parts by mass, less than 500 parts by mass, less than 300 parts by mass, less than 200 parts by mass, less than 150 parts by mass, less than 100 parts by mass, less than 80 parts by mass, 60 parts by mass or less, 50 parts by mass or less, 40 parts by mass or less, 36 parts by mass or less, 35 parts by mass or less, 30 parts by mass or less, 25 parts by mass or less, 20 parts by mass or less, or 15 parts by mass or less. From these viewpoints, the ammonia content may be more than 0 parts by mass and less than 2,000 parts by mass, 10 to 2,000 parts by mass, 100 to 2,000 parts by mass, 300 to 2,000 parts by mass, more than 0 parts by mass and less than 1,500 parts by mass, 10 ~1500 parts by mass, 100~1500 parts by mass, 300~1500 parts by mass or 1~200 parts by mass.

The polishing fluid of this embodiment may contain a preservative (preservative for metal materials) as a compound having an anticorrosive effect on metal materials. The anticorrosive agent forms a protective film on the metal material, thereby easily suppressing etching of the metal material and reducing the roughness of the surface to be polished.

The preservative may include at least one selected from the group consisting of triazole compounds, pyridine compounds, pyrazole compounds, pyrimidine compounds, imidazole compounds, guanidine compounds, thiazole compounds, tetrazole compounds, triazine compounds, and hexamethylenetetramine One kind. "Compound" refers to a general term for compounds having a skeleton. For example, "triazole compound" refers to a compound having a triazole skeleton. From the viewpoint of easily obtaining appropriate preservative effect, the preservative may include at least one selected from the group consisting of triazole compounds, pyridine compounds, imidazole compounds, tetrazole compounds, triazine compounds and hexamethylenetetramine, A triazole compound or a benzotriazole compound may be included.

Examples of the triazole compound include 1,2,3-triazole, 1,2,4-triazole, 3-amino-1H-1,2,4-triazole, benzotriazole, and 1-hydroxy Benzotriazole, 1-dihydroxypropylbenzotriazole, 2,3-dicarboxypropylbenzotriazole, 4-hydroxybenzotriazole, 4-carboxy-1H-benzotriazole, 4- Carboxy-1H-benzotriazole methyl ester (1H-benzotriazole-4-carboxylic acid methyl ester), 4-carboxy-1H-benzotriazole butyl ester (1H-benzotriazole-4-carboxylic acid Butyl ester), 4-carboxy-1H-benzotriazole octyl ester (1H-benzotriazole-4-carboxylic acid octyl ester), 5-hexylbenzotriazole, [1,2,3-benzotriazole Base-1-methyl][1,2,4-triazolyl-1-methyl][2-ethylhexyl]amine, toluenetriazole, naphthotriazole, bis[(1-benzotriazole) methyl]phosphonic acid, 3H-1,2,3-triazolo[4,5-b]pyridin-3-ol, 1H-1,2,3-triazolo[4,5-b] Pyridine, 1-acetyl-1H-1,2,3-triazolo[4,5-b]pyridine, 1,2,4-triazolo[1,5-a]pyrimidine, 2-methyl -5,7-diphenyl-[1,2,4]triazolo[1,5-a]pyrimidine, 2-methylsulfonyl-5,7-diphenyl-[1,2,4 ]Triazolo[1,5-a]pyrimidine, 2-methylthioyl-5,7-diphenyl-4,7-dihydro-[1,2,4]triazolo[1,5 -a]pyrimidine etc. Compounds having a triazole skeleton and other skeletons in one molecule are classified as triazole compounds. From the viewpoint of easily obtaining an appropriate antiseptic effect, the polishing liquid of this embodiment may contain a triazole compound having a hydroxyl group or 1-hydroxybenzotriazole.

From the viewpoint of easily obtaining an appropriate antiseptic effect, the content F of the preservative, triazole compound, or benzotriazole compound may be within the following range based on the total mass of the polishing liquid. The content F may be more than 0% by mass, more than 0.001% by mass, more than 0.003% by mass, more than 0.005% by mass, more than 0.008% by mass, more than 0.01% by mass, more than 0.02% by mass, more than 0.025% by mass, more than 0.03% by mass, 0.04 Mass% or more, 0.05 mass% or more, 0.08 mass% or more, 0.1 mass% or more, 0.3 mass% or more, 0.5 mass% or more or 1 mass% or more. Content F may be 2 mass% or less, 1.5 mass% or less, 1 mass% or less, 0.5 mass% or less, 0.3 mass% or less, 0.1 mass% or less, 0.08 mass% or less, 0.05 mass% or less, 0.04 mass% or less, 0.03 Mass% or less, 0.025 mass% or less, 0.02 mass% or less, 0.01 mass% or less, or 0.008 mass% or less. From these viewpoints, content F may be more than 0 mass% and less than 2 mass%, 0.001 to 2 mass%, 0.005 to 2 mass%, 0.01 to 2 mass%, more than 0 mass% and less than 1 mass%, 0.001 to 2 mass%. 1 mass%, 0.005 to 1 mass%, 0.01 to 1 mass%, more than 0 mass% and less than 0.1 mass%, 0.001 to 0.1 mass%, 0.005 to 0.1 mass% or 0.01 to 0.1 mass%.

The polishing liquid of this embodiment may contain alkaline hydroxide. By using alkaline hydroxide, it is easy to increase the grinding speed of metal materials. Examples of alkaline hydroxides include alkali metal hydroxides such as sodium hydroxide and potassium hydroxide; alkaline earth metal hydroxides; tetramethylammonium hydroxide (TMAH) and the like.

From the viewpoint of easily increasing the polishing speed of metal materials, the content of the alkali hydroxide may be within the following range based on the total mass of the polishing liquid. The content of the alkaline hydroxide may be more than 0% by mass, more than 0.01% by mass, more than 0.05% by mass, more than 0.1% by mass, more than 0.15% by mass, more than 0.2% by mass, more than 0.25% by mass, more than 0.3% by mass, more than 0.35 Mass% or more, 0.36 mass% or more, 0.4 mass% or more, 0.45 mass% or more, or 0.48 mass% or more. The content of the alkaline hydroxide may be 5 mass% or less, 4 mass% or less, 3 mass% or less, 2 mass% or less, 1 mass% or less, 0.8 mass% or less, 0.6 mass% or less, 0.5 mass% or less, 0.48 Mass % or less, 0.45 mass % or less, 0.4 mass % or less, 0.36 mass % or less, 0.35 mass % or less, 0.3 mass % or less, or 0.25 mass % or less. From these viewpoints, the content of the alkaline hydroxide may be more than 0 mass% and less than 5 mass%, 0.01 to 5 mass%, 0.1 to 5 mass%, more than 0 mass% and less than 1 mass%, 0.01 to 1 Mass% or 0.1 to 1 mass%.

The polishing liquid of this embodiment may contain a peroxide that is not compatible with the above-mentioned ammonium salt, or may not contain the peroxide. Examples of the peroxide include potassium persulfate, hydrogen peroxide, ferric nitrate, ferric sulfate, ozone, hypochlorous acid, hypochlorite, potassium periodate, peracetic acid, and the like. The polishing liquid of this embodiment does not need to contain hydrogen peroxide. Based on the total mass of the grinding fluid, the content of peroxide or hydrogen peroxide may be 0.1 mass% or less, less than 0.1 mass%, 0.01 mass% or less, 0.001 mass% or less or essentially 0 mass%.

From the viewpoint of easily increasing the polishing speed of the metal material, the polishing liquid of this embodiment may contain an organic solvent (an organic solvent that does not correspond to the ether compound A). Examples of organic solvents include alcohols (monohydric alcohols and polyhydric alcohols), carbonates, lactones, and the like. Examples of the monohydric alcohol include methanol, ethanol, propanol (for example, 2-propanol), butanol, pentanol, octanol, and the like. Examples of the polyhydric alcohol include diols such as methyl glycol, ethylene glycol, propylene glycol, butylene glycol (for example, 1,3-butylene glycol), and hexylene glycol; glycerin and the like. Examples of carbonates include ethyl carbonate, propylene carbonate, dimethyl carbonate, diethyl carbonate, and ethyl methyl carbonate. Examples of the lactone include propiolactone, butyrolactone, and the like. From the viewpoint of easily increasing the grinding speed of metal materials, the organic solvent may include alcohol, monohydric alcohol, propanol, polyhydric alcohol, or a group selected from the group consisting of methyl glycol, ethylene glycol, and propylene glycol. At least one of the group consisting of , butanediol and hexanediol.

From the viewpoint of easily increasing the polishing speed of metal materials, the content of the organic solvent may be within the following range based on the total mass of the polishing liquid. The content of the organic solvent may be more than 0% by mass, more than 0.1% by mass, more than 0.3% by mass, more than 0.5% by mass, more than 0.6% by mass, more than 0.7% by mass, more than 0.8% by mass, more than 1% by mass, more than 1.2% by mass Or more than 1.3% by mass. The content of the organic solvent may be 20 mass% or less, 15 mass% or less, 10 mass% or less, 8 mass% or less, 5 mass% or less, 4 mass% or less, 3 mass% or less, 2 mass% or less or 1.5 mass% or less. . From these viewpoints, the content of the organic solvent may be more than 0 mass% and less than 20 mass%, 0.1 to 20 mass%, 1 to 20 mass%, more than 0 mass% and less than 5 mass%, 0.1 to 5 mass%, or 1～5% by mass.

The polishing liquid of this embodiment may not contain dihydroxyethylglycine, aminopolycarboxylic acid, and nonmetal salts of aminopolycarboxylic acid. Based on the total mass of the polishing liquid, the content (total amount) of dihydroxyethylglycine, aminopolycarboxylic acid and non-metallic salts of aminopolycarboxylic acid can be less than 0.05 mass% and less than 0.05 mass%, 0.01 mass% or less, 0.001 mass% or less, or substantially 0 mass%.

The polishing liquid of this embodiment may not contain a compound having an unsaturated carboxylic acid monomer unit, and may not contain a polycarboxylic acid-based polymer dispersant. Based on the total mass of the polishing liquid, the content of the compound having an unsaturated carboxylic acid monomer unit or the content of the polycarboxylic acid-based polymer dispersant may be 0.0005 mass% or less, less than 0.0005 mass%, or 0.0001 mass% or less, 0.00001 mass% or less or substantially 0 mass%.

(pH) From the viewpoint of easily suppressing the occurrence of detachment marks of particles containing silicon compounds and from the viewpoint of easily increasing the polishing speed of metal materials, the pH of the polishing liquid in this embodiment may be within the following range. The pH of the grinding fluid can be above 3.00, above 4.00, above 4.00, above 5.00, above 5.00, above 6.00, above 7.00, above 7.00, above 7.50, above 8.00, above 8.00, above 8.50, above 9.00, above 9.30, above 9.40 , over 9.50, over 9.60, over 9.80, over 10.00, over 10.00, over 10.20, over 10.30, over 10.50 or over 10.80. The pH of the grinding fluid can be below 13.00, below 12.00, below 11.80, below 11.50, below 11.00, below 10.80, below 10.50, below 10.30, below 10.20, below 10.00, below 9.80, below 9.60, below 9.50, below 9.40, below 9.30 , below 9.00, below 8.50 or below 8.00. From these viewpoints, the pH of the polishing liquid can be 3.00~13.00, 7.00~13.00, 8.00~13.00, 9.00~13.00, 3.00~12.00, 7.00~12.00, 8.00~12.00, 9.00~12.00, 3.00~11.00, 7.00~ 11.00, 8.00～11.00 or 9.00～11.00. The pH of the polishing liquid can be adjusted by the above-mentioned acid component, ammonia, alkaline hydroxide, etc.

The pH of the polishing liquid in this embodiment can be measured using a pH meter (for example, model: PHL-40 manufactured by DKK-TOA CORPORATION). For example, after performing a two-point calibration of the pH meter using phthalate pH buffer (pH: 4.01) and neutral phosphate pH buffer (pH: 6.86) as standard buffers, Add the polishing fluid and measure the value after it has stabilized for more than 2 minutes. At this time, the liquid temperatures of the standard buffer solution and polishing solution were both set to 25°C.

(save mode) The polishing liquid of this embodiment can be stored as a polishing liquid storage liquid with a smaller amount of water than when used. The storage liquid for polishing liquid is used to obtain the storage liquid for polishing liquid, and the polishing liquid is obtained by diluting the storage liquid for polishing liquid with water before or during use. The dilution ratio is, for example, 1.5 times or more.

The polishing liquid of this embodiment can be stored as a one-liquid polishing liquid containing at least abrasive grains, or as a plurality of liquid-type polishing liquids including a slurry (first liquid) and an additive liquid (second liquid). In a multi-fluid type polishing liquid, the components of the polishing liquid are divided into slurry and additive liquid, and the slurry and additive liquid are mixed to form the polishing liquid. The slurry contains at least abrasive grains and water, for example. The additive liquid contains at least an additive and water, for example. The components of the polishing fluid can be divided into three or more liquids and stored. In a multi-liquid polishing slurry, the slurry and additive liquid can be mixed before or during polishing to prepare the polishing slurry. The slurry and additive liquid in the multi-liquid polishing liquid are supplied to the grinding platform respectively, and the slurry and additive liquid can be mixed on the grinding platform to prepare the grinding liquid.

＜Grinding method＞ The polishing method of this embodiment includes a polishing step of polishing a member to be polished containing resin and particles containing a silicon compound using the polishing liquid of this embodiment. In the polishing step, the surface to be polished of the member to be polished can be polished, and the surface to be polished where resin and particles containing a silicon compound are present can be polished. In the polishing step, at least part of the resin and the particles containing the silicon compound in the member to be polished can be polished and removed. The polishing liquid used in the polishing step may be the above-mentioned one-liquid polishing liquid, or may be a polishing liquid obtained by diluting the above-mentioned polishing liquid storage liquid with water, or may be a polishing liquid obtained by mixing the above-mentioned plural liquid polishing liquids. The grinding liquid obtained from slurry and additive liquid. The member to be polished is not particularly limited and may be a wafer (for example, a semiconductor wafer) or a wafer (for example, a semiconductor wafer). The member to be polished may be a wiring board or a circuit board.

The member to be polished may contain resin, particles containing silicon compounds, and metal materials. In the polishing step, the surface to be polished where resin, particles containing silicon compounds, and metal materials are present is polished. In the polishing step, at least part of the resin, particles containing the silicon compound, and metal material in the member to be polished can be polished and removed. Examples of the metal material include copper, cobalt, tantalum, aluminum, titanium, tungsten, manganese, and the like. Examples of the silicon compound include silicon oxide (for example, SiO ₂ ), SiOC, silicon nitride (for example, SiN), and the like. In the grinding step, the resin may include epoxy resin, and the member to be ground may include epoxy resin, and particles including silicon oxide. The shape of the member to be polished is not particularly limited. As a structure other than the above-mentioned structure, it may be film-shaped, for example. The member to be polished may include an object to be polished (at least one selected from the group consisting of resin, particles containing silicon compounds, and metal materials) on a substrate having concave portions and convex portions on the surface. In addition to at least one selected from the group consisting of resin, particles containing silicon compounds, and metal materials, the member to be polished also contains other materials to be polished (such as insulating materials).

＜Manufacturing method, etc.＞ The component manufacturing method of this embodiment includes a component manufacturing step of obtaining a component using a member (base) to be polished by the polishing method of this embodiment. The component of this embodiment is a component obtained by the manufacturing method of the component of this embodiment. The component in this embodiment is not particularly limited, but may be an electronic component (such as a semiconductor component such as a semiconductor package), a wafer (such as a semiconductor wafer), or a chip (such as a semiconductor chip). As one aspect of the method of manufacturing a component of this embodiment, in the method of manufacturing an electronic component of this embodiment, an electronic component is obtained by using a member to be polished by the polishing method of this embodiment. As one aspect of the method for manufacturing a component of this embodiment, in the method of manufacturing a semiconductor component of this embodiment, a semiconductor component (for example, a semiconductor package) is obtained using a member to be polished by the polishing method of this embodiment. The component manufacturing method of this embodiment may include a polishing step of polishing the member to be polished by the polishing method of this embodiment before the component manufacturing step.

The component manufacturing method of this embodiment may include, as an aspect of the component manufacturing step, a singulation step of singulating the polished member (base body) polished by the polishing method of this embodiment into individual pieces. The singulation step may be, for example, a step of cutting the wafer (for example, a semiconductor wafer) polished by the polishing method of this embodiment to obtain a wafer (for example, a semiconductor wafer). As one aspect of the method for manufacturing a component of the present embodiment, the method of manufacturing an electronic component of the present embodiment may include the step of obtaining an electronic component (for example, a semiconductor) by singulating a member to be polished using the polishing method of the present embodiment. component) steps. As one aspect of the method of manufacturing a component of this embodiment, the method of manufacturing a semiconductor component of this embodiment may include the step of obtaining a semiconductor component (for example, a semiconductor) by singulating a member to be polished by the polishing method of this embodiment into individual pieces. Encapsulation) steps.

The component manufacturing method of this embodiment may include, as an aspect of the component manufacturing step, a step of connecting (for example, electrically connecting) the member to be polished (base body) polished by the polishing method of this embodiment to other connected bodies. . The connected body connected to the member to be polished by the polishing method of this embodiment is not particularly limited, and may be the member to be polished by the polishing method of this embodiment, or may be connected to the member polished by the polishing method of this embodiment. The connected parts are different from the components to be ground. In the connecting step, the member to be polished and the connected body may be connected directly (connected while the member to be polished and the connected body are in contact), or the member to be polished and the connected body may be connected through other members (conductive members, etc.). The connecting step can be performed before the singulation step, after the singulation step, or before and after the singulation step.

The connecting step may be a step of connecting the polished surface and the connected body of the polished member polished by the polishing method of this embodiment, or it may be the step of connecting the connecting surface and the connected body of the polished member polished by the polishing method of this embodiment. Steps for connecting surfaces of bodies. The connecting surface of the member to be polished may be the surface to be polished by the polishing method of this embodiment. Through the connecting step, a connected body including a member to be polished and a connected body can be obtained. In the connecting step, when the connecting surface of the member to be polished has a metal part, the connected body may be brought into contact with the metal part. In the connecting step, when the connecting surface of the member to be polished has a metal part and the connecting surface of the connected object has a metal part, the metal parts may be brought into contact with each other. The metal portion may contain copper.

The device of this embodiment (for example, an electronic device such as a semiconductor device) includes at least one selected from the group consisting of a member to be polished by the polishing method of this embodiment and a component of this embodiment. [Example]

Hereinafter, the present disclosure will be specifically described based on Examples, but the present disclosure is not limited to the Examples.

＜Preparation of polishing fluid＞ By mixing each component of Tables 1 to 4 and distilled water, a polishing liquid having the composition of each table was obtained. Each table shows the content of each component (unit: mass %) based on the total mass of the polishing fluid, and the remainder is distilled water. As the cerium oxide particles, product name "HS-8005" manufactured by Showa Denko Materials Co., Ltd. was used. As colloidal silica, product name "PL-3" manufactured by Fuso Chemical Co., Ltd. (secondary particle size: 70 nm) was used. The content of colloidal silica refers to the content of silica particles as solid content. “MMB” refers to 3-methoxy-3-methyl-1-butanol, “HBTA” refers to 1-hydroxybenzotriazole, and “BTA” refers to benzotriazole. As polyglycerol, product name "PGL750" manufactured by Sakamoto Yakuhin Kogyo Co., Ltd. (glycerol decamer, weight average molecular weight: 750, hydroxyl value: 870 to 910) was used.

<Average particle size of abrasive grains> Using "Microtrac MT3300EXII" manufactured by Microtrac Inc., the average particle size of the abrasive grains in the polishing liquid of each example was determined. In each example, the average particle diameter D50 is 341 nm, and the average particle diameter D80 is 609 nm.

＜PH of polishing liquid＞ The pH of the polishing liquid was measured using a pH meter (model: PHL-40 manufactured by DKK-TOA CORPORATION). After using phthalate pH buffer (pH: 4.01) and neutral phosphate pH buffer (pH: 6.86) as standard buffers and performing a 2-point calibration of the pH meter, put the electrode of the pH meter into The value of the polishing fluid after stabilization was measured for 2 minutes or more. The results are shown in each table.

＜Evaluation＞ As the base A for evaluating the presence or absence of signs of peeling, a base (having a metal portion extending in the thickness direction of the base (thickness direction of the base portion) and containing copper, and a base portion covering the outer periphery of the metal portion) was prepared. A base body) containing an epoxy resin and a base portion containing particles of silicon oxide, the base body having: a base portion, containing an epoxy resin and particles containing silicon oxide; and a metal portion disposed on a The opening of the base material part (the opening extending along the thickness direction of the base material part (thickness direction of the base material part)) contains copper. A plurality of metal parts with a diameter of 200 μm or less are arranged in an array. The cross-sectional shape of the metal portion perpendicular to the thickness direction of the base body is circular. Substrate A has a polished surface on which epoxy resin, particles containing silicon oxide, and copper are present.

As the base B for evaluating the polishing rate (Cu-RR) of copper in Examples 1 to 3, 5 to 21, 27, 29 to 40, and Comparative Example 1, a copper plate with a diameter of 300 mm formed on a silicon wafer was prepared. Membrane matrix.

In a polishing device (manufactured by Applied Materials, Inc., product name: Reflexion LK), a substrate (substrate A or substrate B) is mounted on a substrate mounting bracket to which an adsorption pad is attached. On the platform to which the porous polyurethane resin pad is attached, a holder is mounted so that the surface to be polished (the area where the metal part is arranged with respect to the base A) faces the pad. The above-mentioned polishing liquid was supplied to the pad at a supply rate of 350 mL/min, and the substrate was pressed against the pad at a polishing load of 4 psi. At this time, the platform was rotated at 147 min ^-1 and the stand was rotated at 153 min ^-1 for grinding. The grinding time for substrate A is 5 minutes, and the grinding time for substrate B is 1 minute. The ground substrate was thoroughly washed with pure water and then dried.

Using a field emission scanning electron microscope (manufactured by Hitachi High-Tech Corporation, product name: S-4800), the polished surface of the substrate A (excluding the area within 5 mm from the end of the polished surface) Observe 4 locations in an area of 10 μm × 14 μm to confirm whether there are any traces of detachment with a short diameter of 1.0 μm or more (whether particles containing silicon oxide are detached). The case where no trace of peeling was observed was evaluated as "A", and the case where trace of peeling was confirmed was evaluated as "B". The results are shown in Tables 1 to 4.

Using a metal film thickness measuring device (manufactured by Hitachi Kokusai Electric Inc., product name: VR-120/08S), the change in the thickness of the copper film in the base B before and after polishing was measured to determine the copper polishing rate. The thickness of 65 points located at equal intervals on the line (diameter) passing through the center of the base B was measured, and the average value was used as the thickness of the copper film. The measurement results are shown in Tables 1 to 4.

[Table 1] Example 1 2 3 4 5 6 7 8 9 10 11 12 13 composition Cerium oxide particles 1 1 1 1 1 1 1 1 1 1 1 1 1 ammonium carbonate 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 ammonia 0.30 MMB 0.333 0.333 0.333 0.333 0.333 0.333 0.333 0.305 Polyglycerol 1 1 1 1 1 1 1 1 1-propoxy-2-propanol 1.333 Hexanediol 1.333 1,3-butanediol 1.333 2-Propanol 1.333 malic acid 0.01 glycine 0.4 HBTA 0.010 0.010 0.008 0.025 potassium hydroxide 0.48 0.24 0.48 0.48 pH 9.93 9.39 9.24 8.90 9.70 10.50 9.56 9.13 9.79 9.81 9.86 9.84 9.87 Evaluation Are there any signs of falling off? A A A A A A A A A A A A A Cu-RR[μm/min] 0.64 0.90 0.75 - 0.68 0.62 0.58 0.61 0.76 0.76 0.75 0.64 0.49

[Table 2] Example 14 15 16 17 18 19 20 twenty one composition Cerium oxide particles 1 1 1 1 1 1 1 1 ammonium carbonate 0.42 0.42 0.42 0.42 0.42 1.69 1.69 1.69 Ammonium persulfate 0.60 0.80 ammonia 0.15 MMB 0.333 0.333 0.305 0.305 0.305 0.333 0.333 0.333 Polyglycerol 1 1 1 1 1 1 1 1 malic acid 0.01 0.01 0.01 0.01 0.01 0.01 0.01 glycine 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.4 HBTA 0.025 0.025 0.025 potassium hydroxide 0.48 0.48 0.48 0.48 0.48 0.48 0.48 pH 9.89 10.10 9.82 9.41 9.33 9.47 9.52 8.56 Evaluation Are there any signs of falling off? A A A A A A A A Cu-RR[μm/min] 0.40 0.65 0.40 1.08 1.32 0.56 0.42 0.26

[table 3] Example twenty two twenty three twenty four 25 26 27 28 composition Cerium oxide particles 1 1 1 2 1 1 1 Ammonium persulfate 0.80 0.80 0.80 0.80 0.80 0.80 0.80 ammonia 0.10 0.10 0.10 0.10 0.10 0.15 0.15 MMB 0.100 0.100 0.100 0.100 Polyglycerol 1 1-propoxy-2-propanol 0.666 malic acid 0.01 0.01 0.01 0.01 0.01 0.01 0.01 glycine 0.8 0.8 0.8 0.8 0.8 0.4 0.4 HBTA 0.030 0.030 BTA 0.1 0.1 1.0 potassium hydroxide 0.36 0.36 0.36 0.36 0.36 0.48 0.48 pH 9.51 9.56 9.52 9.48 9.07 9.97 9.53 Evaluation Are there any signs of falling off? A A A A A A A Cu-RR[μm/min] - - - - - 1.22 -

[Table 4] Example Comparative example 29 30 31 32 33 34 35 36 37 38 39 40 1 composition Cerium oxide particles 1 1 1 1 1 1 1 1 1 1 1 1 colloidal silica 1 ammonium carbonate 0.42 Ammonium persulfate 0.80 Ammonium acetate 0.02 0.02 1.36 ammonium bicarbonate 1.39 0.70 Ammonium sulfate 1.16 0.10 Ammonium chloride 0.94 Ammonium dihydrogen phosphate 1.16 0.10 ammonia 0.30 0.30 0.30 0.30 MMB 0.333 0.333 0.333 0.333 0.333 0.333 0.333 0.333 0.333 0.333 0.333 0.333 0.333 Polyglycerol 1 1 1 1 1 1 1 1 1 1 1 1 malic acid 0.01 0.01 0.01 glycine 0.4 0.4 HBTA 0.008 0.008 0.008 0.008 0.008 potassium hydroxide 0.48 0.48 0.48 0.48 0.48 0.48 0.48 0.48 pH 10.67 10.89 9.61 9.30 7.99 9.47 10.36 9.51 9.71 10.24 12.16 12.92 9.82 Evaluation Are there any signs of falling off? A A A A A A A A A A A A B Cu-RR[μm/min] 1.21 0.40 0.44 0.63 0.31 0.84 0.41 0.45 0.64 0.40 0.09 0.06 0.31

10: Component to be ground 12:Substrate Department 12a:Resin 12b:Particles 14:Metal Department

FIG. 1 is a cross-sectional view schematically showing an example of a member to be polished.

Claims (20)

A polishing liquid used for grinding a component to be polished, the aforementioned polishing liquid containing abrasive grains containing cerium oxide, The aforementioned member to be polished contains resin and particles containing a silicon compound. The polishing fluid as described in claim 1, wherein The aforementioned particles include silicon oxide. The polishing liquid according to claim 1, further containing an ether compound having a hydroxyl group. The polishing fluid as described in claim 3, wherein The aforementioned ether compounds include alkoxyalcohols. The polishing fluid as described in claim 4, wherein The aforementioned ether compounds include alkoxyalcohols with a molecular weight of less than 200. The polishing fluid as described in claim 4, wherein The aforementioned alkoxy alcohol includes compounds having an alkoxy group having 1 to 5 carbon atoms. The polishing fluid as described in claim 4, wherein The aforementioned alkoxy alcohol includes 1-propoxy-2-propanol. The polishing fluid as described in claim 4, wherein The aforementioned alkoxy alcohol includes 3-methoxy-3-methyl-1-butanol. The polishing fluid as described in claim 4, wherein Based on the total mass of the polishing liquid, the content of the aforementioned alkoxy alcohol is 0.2 to 0.8% by mass. The polishing fluid as described in claim 4, wherein The aforementioned ether compound further includes polyether. The polishing fluid as described in claim 10, wherein The aforementioned polyether contains polyglycerol. The polishing fluid as described in claim 10, wherein Based on the total mass of the polishing liquid, the content of the aforementioned polyether is 0.5 to 3% by mass. The polishing fluid as described in claim 1, wherein Based on the total mass of the polishing fluid, the content of the aforementioned abrasive particles is 0.5 to 2 mass%. The polishing liquid according to claim 1, further containing an organic acid component. The polishing liquid according to claim 1, further containing at least one selected from the group consisting of ammonium cations and ammonia. The pH of the polishing liquid described in claim 1 is 9.00 to 11.00. A polishing method for polishing a member to be polished containing resin and particles containing a silicon compound using the polishing liquid according to any one of claims 1 to 16. The grinding method as described in claim 17, wherein The aforementioned resin includes epoxy resin. A method of manufacturing a component using a component to be ground that is ground by the grinding method described in claim 17 to obtain the component. A method of manufacturing a semiconductor component, using a member to be polished by the polishing method described in claim 17 to obtain a semiconductor component.