TW202406174A - Pixel package and display device - Google Patents

Abstract

A pixel package is provided to include: a carrier board, a pixel, a reflective layer, and a light-absorbing layer. The pixel is disposed on the carrier board, and includes: a first light-emitting unit having a first light-emitting surface; a second light-emitting unit having a second light-emitting surface; and a wavelength conversion layer disposed on the second light-emitting surface and having a third light-emitting surface. The reflective layer has a first portion and a second portion, and surrounds the first light-emitting unit and the second light-emitting unit. The first portion has a second upper surface coplanar with the first light-emitting surface, and the second portion is on the first portion and has a third upper surface. The light-absorbing layer is disposed on the third upper surface. The third upper surface is located between the second light-emitting surface and the third light-emitting surface in a vertical direction. A thickness ratio of the light-absorbing layer to the second portion, measured in a direction perpendicular to the first light-emitting surface, is larger than 0 and less than or equal to 1/5.

Description

Pixel package and display device

The present disclosure relates to a pixel package and a display device, and in particular to a pixel package and a display device having sub-millimeter light emitting diodes.

Light-Emitting Diode (LED) has the characteristics of low power consumption, low heat generation, long operating life, impact resistance, small size and fast response speed, so it can be used in various fields that require the use of light-emitting elements. For example, lighting, medical care, display, communication, sensing, power supply systems and other fields.

With the advancement of technology, the size of optoelectronic semiconductor components is gradually becoming smaller. In recent years, due to breakthroughs in the production size of light-emitting diodes, sub-millimeter light-emitting diode (Mini LED) displays, which are produced by arranging light-emitting diodes in an array, are gradually gaining attention in the market. Compared with organic light-emitting diode (OLED) displays, sub-millimeter light-emitting diode displays are more power-saving, have better reliability, longer service life, and better contrast ratio performance, and higher brightness for visibility in sunlight.

In addition, in order to facilitate the use of LED chips in display applications, pixel packages containing LED chips can be used. Pixel packages typically use an encapsulation layer (such as a transparent epoxy or silicone material surrounding the LED die) to protect the LED die from exposure to physical damage or environmental conditions that cause corrosion or degradation.

In conventional pixel packages, two adjacent light-emitting diode dies are separated by a packaging layer. The encapsulation layer includes a wavelength conversion layer and a transparent encapsulant. Because the light from the light-emitting diode die will pass through the packaging layer, problems such as optical crosstalk, low contrast, and poor light extraction efficiency will occur in pixel packages or display devices using conventional pixel packages.

Embodiments of the present disclosure provide a pixel package, including: a carrier plate having a first upper surface; a pixel disposed on the first upper surface, including: a first light-emitting unit, a second light-emitting unit, and a wavelength conversion layer. The first light-emitting unit has a first light-emitting surface and a first side surface, the second light-emitting unit has a second light-emitting surface and a second side surface, and the second side surface faces the first side surface, and the wavelength conversion layer is disposed on the second light-emitting surface. and has a third light-emitting surface and a third side surface; the reflective layer is disposed between the first side surface and the second side surface and has a first part and a second part, wherein the second part is located on the first part and has a third three upper surfaces; and a light-absorbing layer disposed on the third upper surface of the second part; wherein the height of the third upper surface of the second part is between the second light-emitting surface and the third light-emitting surface, wherein, since Measured in a direction perpendicular to the first upper surface, the thickness ratio of the light-absorbing layer to the second part is greater than 0 and less than or equal to 1/5.

Embodiments of the present disclosure provide a display device, including: a display substrate having first and second sides opposite to each other; pixels located on the first side of the display substrate, including: a first light-emitting unit, a second light-emitting unit and Wavelength conversion layer, the first light-emitting unit has a first light-emitting surface and a first side surface, the second light-emitting unit has a second light-emitting surface and a second side surface, and the second side surface and the first side surface are opposite to each other, the wavelength conversion layer is provided The second light-emitting surface has a third light-emitting surface and a third side surface; the reflective layer is disposed between the first side surface and the second side surface and has a first part and a second part, wherein the second part is located on the second side surface. One part has a third upper surface; and a light-absorbing layer is disposed on the third upper surface of the second part; wherein the height of the third upper surface of the second part is between the second light-emitting surface and the third light-emitting surface. time, wherein, measured from the direction perpendicular to the first upper surface, the thickness ratio of the light-absorbing layer to the second part is greater than 0 and less than or equal to 1/5.

The following disclosure provides numerous embodiments, or examples, for implementing different elements of the provided subject matter. Specific examples of each component and its configuration are described below to simplify the description of the embodiments of the present disclosure. Of course, these are only examples and are not intended to limit the embodiments of the present disclosure. For example, if the description mentions that a first element is formed on a second element, it may include an embodiment in which the first and second elements are in direct contact, or may include an additional element formed between the first and second elements. , so that they are not in direct contact. In addition, embodiments of the present disclosure may use repeated element symbols in various examples. Such repetition is for the sake of simplicity and clarity and is not intended to represent the relationship between the various embodiments and/or configurations discussed.

Furthermore, spatially related terms may be used here, such as "under", "below", "below", "above", "above", and similar terms may be used here so that Describe the relationship between one element or component and other elements or components as shown in the figure. These spatial terms are intended to cover the various orientations of the device in use or operation, in addition to the orientation depicted in the diagrams. For example, if the device in the picture is turned over, elements described as "lower than" or "beneath" other elements or features would then be described as "above" the other elements or features. Therefore, the exemplary term "below" can have both the orientations of "above" and "below". When the device is rotated 90° or at any other orientation, the spatially relative descriptors used herein may be interpreted similarly to the rotated orientation.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It should be understood that these terms, such as those defined in commonly used dictionaries, should be interpreted to have a meaning consistent with the relevant technology and the background or context of the present disclosure, and should not be interpreted in an idealized or overly formal manner. Unless otherwise defined in the embodiments of this disclosure.

The disclosure provides a pixel package and a display device that use a two-color barrier encapsulation layer structure surrounding a light-emitting diode die. The two-color barrier encapsulation layer structure includes a black light-absorbing layer and a white reflective layer. The black light-absorbing layer can prevent Light crosstalk and increased contrast, the white reflective layer increases light extraction. In addition, the present disclosure further increases light brightness while maintaining the black contrast of the surface by making the ratio of the thickness of the light-absorbing layer to the thickness of the portion of the reflective layer located above the light-emitting diode die greater than 0 and less than or equal to 1/5. Furthermore, by making the angle between the reflective layer and the upper surface of the light-emitting diode die a right angle or an obtuse angle, the present disclosure can change the light emission angle of the pixel package and further enhance the light emission brightness.

[Pixel package]

Figure 1A is a top view of a pixel package (Pixel Package) 10 according to an embodiment. As shown in FIG. 1A , from a top view of the pixel package 10 , the light-absorbing layer 420 completely covers the reflective layer (not shown) and exposes the pixel 200 , where the pixel 200 includes the first light-emitting unit 210 , the The second light-emitting unit 220 and the third light-emitting unit 230.

Figure 1B shows a top view of a multi-pixel package (Multi-Pixel Package) 20 according to another embodiment. The multi-pixel package 20 has a similar structure to the aforementioned pixel package 10 shown in FIG. 1A . The difference is that the multi-pixel package 20 includes a plurality of groups of pixels 200 . In one embodiment, the multi-pixel package 20 includes four groups of pixels 200 . In the multi-pixel package 20, in two adjacent pixels 200, two adjacent light-emitting diodes belonging to different pixels 200 emit the same wavelength. And any two adjacent light-emitting diodes in any pixel 200 are separated from each other by a fixed distance. Specifically, as shown in FIG. 1B , the distance between two adjacent pixels 200 arranged laterally (along the X-axis) and two adjacent first light-emitting units 210 belonging to different pixels 200 is D1 ; Between two adjacent pixels 200 arranged longitudinally (along the Y-axis), the distance between two adjacent first light-emitting units 210 belonging to different pixels 200 is D2, and D1 and D2 are the same. The detailed structures of the first light-emitting unit 210, the second light-emitting unit 220, and the third light-emitting unit 230 will be described later.

The above-mentioned first light-emitting unit 210, second light-emitting unit 220, and third light-emitting unit 230 may be sub-millimeter light-emitting diodes (Mini Light-Emitting Diode; Mini LED), and in the top view (Figure 1A, Figure 1B) , has length L and width W. The above-mentioned length L is 90 μm to 225 μm, preferably 90 μm to 150 μm, for example: 90 μm, 100 μm, 110 μm, 120 μm, 130 μm, 140 μm, 150 μm. The width W is 40 μm to 125 μm, preferably 40 μm to 90 μm, for example: 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, or 90 μm.

Figure 2 is a schematic cross-sectional view of the pixel package 10 in Figure 1A or a schematic cross-sectional view of one group of pixels 200 in the multi-pixel package 20 in Figure 1B. As shown in Figure 2, the pixel package includes a carrier 100, a pixel (Pixel) 200, a reflective layer 410, a light-absorbing layer 420, and a light-transmitting layer 600. The reflective layer 410 and the light-absorbing layer 420 form a dual-color, dual-reflectivity and/or dual-absorbance wall structure 400. In one embodiment, the carrier board 100 has a first upper surface 110t1 and a first lower surface 110t2 opposite each other, and includes an insulating layer 110, an upper conductive layer 120, and a plurality of conductive vias (Conductive Via) (not shown) , and the lower conductive layer 130. The upper conductive layer 120 and the lower conductive layer 130 are respectively located on the first upper surface 110t1 and the first lower surface 110t2 of the insulating layer 110, and a plurality of conductive through holes penetrate the insulating layer 110 to electrically connect the upper conductive layer 120 and the lower conductive layer 130. , wherein the upper conductive layer 120 can be electrically connected to the pixel 200 and the lower conductive layer 130, and the lower conductive layer 130 can be electrically connected to an external control circuit.

The material of the insulating layer 110 may be epoxy resin, BT resin (Bismaleimide Triazine), polyimide resin (Polyimide), a composite material of epoxy resin and glass fiber, a composite material of BT resin and glass fiber, or polyimide. A composite material of polyimide and glass fiber. The materials of the upper conductive layer 120 and the lower conductive layer 130 may be the same or different, and the materials include metals, such as copper, tin, aluminum, silver, gold, alloys of the above materials, or laminates of the above materials.

As shown in Figure 2, the pixel 200 is disposed on the first upper surface 110t1 of the carrier 100, and includes several light-emitting units located on the carrier 100, such as a first light-emitting unit 210, a second light-emitting unit 220, and The third light emitting unit 230. The first light emitting unit 210 has a first light emitting surface 210S and a first side surface 210W; the second light emitting unit 220 has a second light emitting surface 220S and a second side surface 220W; and the third light emitting unit 230 has a fourth light emitting surface 230S. In one embodiment, the pixel 200 further includes a wavelength conversion layer 500, which is disposed on the second light-emitting surface 220S of the second light-emitting unit 220 and has a third light-emitting surface 500S and a third side surface 500W.

In an embodiment, the first light-emitting unit 210, the second light-emitting unit 220, and the third light-emitting unit 230 may be light-emitting diode dies (LED dies) that respectively emit light of different wavelengths or different colors, and the first The material compositions of the light-emitting unit 210, the second light-emitting unit 220, and the third light-emitting unit 230 are not exactly the same. In another embodiment, the third light-emitting unit 230 is a red light-emitting diode chip, which can provide a power through a power source to emit the first light, the dominant wavelength (Dominant Wavelength) or the peak wavelength (Peak Wavelength) of the first light. ) between 600 nm and 660 nm, the second light-emitting unit and the first light-emitting unit 210 are blue light-emitting diode dies, wherein the second light-emitting unit 220 and the third light-emitting unit 230 can respectively emit second light of the same color. The dominant wavelength (Dominant Wavelength) or the peak wavelength (Peak Wavelength) of the light and the third light, the second light and the third light is between 430 nm and 480 nm, and the second light emitted by the second light-emitting unit 220 passes through The wavelength conversion layer 500 located above it converts the wavelength to a dominant wavelength (Dominant Wavelength) or a peak wavelength (Peak Wavelength) between 510 nm and 560 nm. The third light-emitting surface 500S of the wavelength conversion layer 500 can be a flat surface or a curved surface. For example, as shown in Figure 2, when the originally liquid curable wavelength conversion material is filled as the wavelength conversion layer 500, the third light-emitting surface 500S is affected by surface tension during the manufacturing process and becomes a concave arc shape. The curable wavelength conversion material is composed of a wavelength conversion material and a base material. The base material may include silicone, epoxy, acrylic resin, polyimide or a mixture of the above materials; the wavelength conversion material may include fluorescent Powder material or quantum dot material. Suitable phosphor materials include doped garnets (such as YAG:Ce and (Y, _Gd )AG:Ce), aluminates (such as _Sr2Al14O25 :Eu and BAM:Eu), silicates (such as SrBaSiO:Eu), sulfides (such as ZnS:Ag, CaS:Eu and _SrGa2S4 :Eu) _, oxysulfides, oxynitrides, phosphates, borates and tungstates (such as _CaWO4 ); Suitable quantum dot materials include Si, Ge, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, PbS, PbSe, PbTe, InN, InP, InAs, AlN, AlP, AlAs, GaN, GaP, GaAs and combinations thereof.

Figures 3A and 3B show enlarged cross-sectional views of the first light-emitting unit 210 and the retaining wall structure 400 in the dotted line portion of Figure 2 . The second light-emitting unit 220 and the third light-emitting unit 230 have a similar structure, and the difference is that the second light-emitting unit 220 has a wavelength conversion layer 500 above it. In one embodiment, as shown in Figures 3A and 3B, the light-emitting unit 210 is a flip-chip. The light-emitting unit 210 at least includes a light-emitting layer 216, a p-type semiconductor layer 218 and an n-type semiconductor layer 214 located on both sides of the light-emitting layer 216, a growth substrate 212, a p-type contact electrode 218c and an n-type contact electrode 214c. The p-type contact electrode 218c and the n-type contact electrode 214c are electrically connected to the p-type semiconductor layer 218 and the n-type semiconductor layer 214 through the solder 300 respectively. In one embodiment, the light-emitting unit 210 does not include the growth substrate 212 or includes a thinned growth substrate. The outer wall of the light-emitting layer 216 is surrounded by the reflective layer 410. Therefore, the light emitted by the light-emitting layer 216 will not directly emit to other adjacent light-emitting units, so that the light can only leave the pixel package 10 through the first light-emitting surface 210S or Multi-pixel package 20.

Referring to FIG. 2 , the reflective layer 410 respectively surrounds the first light-emitting unit 210 , the second light-emitting unit 220 and the third light-emitting unit 230 . In a top view (not shown), the reflective layer 410 completely surrounds the first light-emitting unit 210 , the second light-emitting unit 220 and the third light-emitting unit 230 respectively. For example, the reflective layer 410 is disposed between the first side surface 210W of the first light-emitting unit 210 and the second side surface 220W of the second light-emitting unit 220. The reflective layer 410 also has a first part 412 and a second part 414. The first part 412 has a second upper surface 412t coplanar with the first light-emitting surface 210S of the first light-emitting unit 210. The second part 414 is located on the first part 412 and has a third upper surface 414t. The side walls of the second part 414 are coplanar with the side walls of the first part 412, and the height of the third upper surface 414t of the second part 414 is between the second luminous between the second light-emitting surface 220S of the unit 220 and the third light-emitting surface 500S of the wavelength conversion layer 500, so that the light emitted by the first light-emitting unit 210 and the light emitted by the second light-emitting unit 220 after being converted by the wavelength conversion layer 500 are reflected , thereby improving the brightness of the light. In addition, since the reflective layer 410 covers the sidewall 210W of the first light-emitting unit 210, the second side surface 220W of the second light-emitting unit 220, and the sidewall of the third light-emitting unit 230, the first light-emitting unit 210 and the third light-emitting unit 230 in the pixel package The light emitted by the second light-emitting unit 220 and the third light-emitting unit 230 can only be emitted from the first light-emitting surface 210S, the second light-emitting surface 220S, and the fourth light-emitting surface 230S. The light emitted by the second side surface 220W of the light-emitting unit 220 and the side wall of the third light-emitting unit 230 is completely blocked by the reflective layer 410, which can prevent the first light-emitting unit 210, the second light-emitting unit 220, and the third light-emitting unit 230 from being blocked. The optical crosstalk between them improves the color purity and contrast of the pixel package.

In some embodiments, the material of first portion 412 may be the same as the material of second portion 414 . In other embodiments, the material of the first part 412 may be different from the material of the second part 414, wherein the reflectivity of the first part 412 may be greater than the reflectivity of the second part 414, and the material of the first part 412 may be a non-exposure developing type. , so there is no need to consider the exposure factor, so the content of the added reflective particles can be higher to have a greater reflectivity, thereby improving the brightness of the light. In detail, the reflectivity of the first part 412 is, for example, greater than 95%, and the reflectivity of the second part 414 is, for example, in the range of 90 to 91%.

Continuing to refer to FIG. 2 , the light-absorbing layer 420 is disposed on the third upper surface 414t of the second part 414 and surrounds the first light-emitting unit 210 and the second light-emitting unit 220 . As shown in the enlarged views of Figures 3A and 3B, the first portion 412 and the second portion 414 of the reflective layer 410 have a first thickness H1 and a second thickness H2 respectively, wherein the first thickness H1 is greater than the second thickness H2. In addition, the light-absorbing layer 420 has a third thickness H3, wherein, measured from the direction perpendicular to the first upper surface 110t1, the thickness ratio (H3/H2) of the light-absorbing layer 420 and the second portion 414 is greater than 0 and less than or equal to 1/ 5, so that the large-angle light emitted by the first light-emitting unit 210 and the large-angle light emitted by the second light-emitting unit 220 after being converted by the wavelength conversion layer 500 can be reflected by the reflective layer 410 without being absorbed by the light-absorbing layer 420, and thus Improve light output while reducing crosstalk and maintaining contrast. In detail, the thickness H2 of the second part 414 is within 5 to 20 range, and the thickness H3 of the light-absorbing layer 420 is within 0.1 to 1 range. According to the inventor's research, if the thickness ratio (H3/H2) is greater than 1/5, the improvement in light output brightness will become smaller.

In addition, from the cross-sectional view (as shown in Figures 3A and 3B), the light-absorbing layer 420 has a first maximum opening 420o on the first light-emitting unit 210, and the second portion 414 has a second maximum opening on the first light-emitting unit 210. Maximum opening 414o. In one embodiment, as shown in Figure 3A, the angle between the side wall of the second portion 414 in the second largest opening 414o and the first light-emitting surface 210S of the first light-emitting unit 210 is a right angle, and the width of the first largest opening 420o of the light-absorbing layer 420 is equal to the width of the second largest opening 414o of the second portion 414, and the light emission angle is about 80 to . In another embodiment, as shown in Figure 3B, the angle between the side wall of the second portion 414 in the second largest opening 414o and the first light-emitting surface 210S of the first light-emitting unit 210 is an obtuse angle, so that the part of the retaining wall structure 400 located above the first light-emitting surface 210S is an "inverted trapezoid" in the cross-sectional view. The above-mentioned obtuse angle is preferably 120 to 130 , in addition, in the cross-sectional view, the width of the first maximum opening 420o is greater than the width of the first light-emitting surface 210S, and the width of the second maximum opening 414o is less than the width of the first maximum opening 420o and greater than the width of the first light-emitting surface 210S. This design can increase the light angle to 100 to 115 And further enhance the brightness.

The material of the light-absorbing layer 420 includes a base material (Matrix) and a light-absorbing material. The base material includes silicone resin, epoxy resin, acrylic resin, and polyimide resin. ) or a mixture of the above materials, the light-absorbing material includes carbon black and dark dyes. The light transmittance of the light absorbing layer 420 is lower than that of the light transmitting layer 600 , or the light absorbing rate of the light absorbing layer 420 is higher than that of the light transmitting layer 600 . By adjusting the concentration of the light-absorbing material in the base material, the light transmittance of the light-absorbing layer 420 is lower than 30%, that is, the light-absorbing layer 420 is almost or completely opaque.

As shown in FIG. 2 , the light-transmitting layer 600 is disposed on the first upper surface 110t1 and covers the light-absorbing layer 420 , the first light-emitting unit 210 , the second light-emitting unit 220 , and the third light-emitting unit 230 . As shown in Figures 3A and 3B, the light-transmitting layer 600 completely fills the space surrounded by the first light-emitting surface 210S, the reflective layer 410, and the light-absorbing layer 420. The material of the light-transmitting layer 600 includes silicone, epoxy, acrylic resin, a mixture of the above materials, or a laminate of the above materials. In one embodiment, the light transmittance of the light-transmitting layer 600 is greater than 90%. In addition, the hardness of the light-absorbing layer 420 may be smaller than the hardness of the light-transmitting layer 600 . For example, the Shore D hardness of the light-absorbing layer 420 is less than 60, and the Shore D hardness of the light-transmitting layer 600 is greater than 60, so that the pixel package is scratch-resistant and wear-resistant.

[Process of pixel package]

The manufacturing process of the pixel package can be formed by the following method: providing a support base, such as a steel plate, and a soft pad placed on the support base, and placing a diaphragm on the soft cushion, where the diaphragm includes a carrier diaphragm and a plastic film and a release layer between the carrier diaphragm and the adhesive film. The adhesive film can be a semi-cured (B-stage) diaphragm, and the materials include silicone, epoxy, and polyurethane. ; PU), thermoplastic polyurethane elastomer (Thermoplastic Urethane; TPU), or mixtures thereof. The glue film contains reflective materials, such as titanium oxide (TiO _x ), silicon oxide (SiO _x ), or mixtures thereof, and can form the reflective layer 410 , where the reflective layer 410 can be white. Next, the carrier 100 on which the light-emitting units are disposed is placed upside down on the diaphragm, so that the surface of each light-emitting unit contacts the adhesive film in the diaphragm. An air pressure pad is provided on the back side of the carrier board 100 relative to the light-emitting element (the side without the light-emitting unit), and the air pressure pad is used to exert pressure on the carrier board 100 to cause the light-emitting element to sink into the film. During the process, the adhesive film is heated to maintain a softened state.

The softened adhesive film is squeezed into the space of adjacent light-emitting units through air pressure pads and soft pads. In one embodiment, the air pressure pad continues to apply pressure until the softened adhesive film completely fills the gaps between adjacent light-emitting units and exposes the upper surface and/or part of the side surface of the light-emitting units. When the adhesive film fills the gaps between adjacent light-emitting units and reaches a predetermined thickness, stop heating and let it sit for a period of time. After the adhesive film solidifies to form a solid adhesive layer, release the pressure from the air pressure pad and remove the release layer and carrier diaphragm.

Next, the adhesive layer on the light-emitting unit is removed through a dry etching process to form the first portion 412 of the reflective layer 410 that is coplanar with the surface of the light-emitting unit. The gas used in the dry etching process includes Argon (Argon; ), oxygen-containing gas, ozone-containing gas, fluorine-containing gas (for example, tetrafluoromethane (CF ₄ ), sulfur hexafluoride (Sulfur Hexafluoride; SF ₆ ), difluoromethane (Difluoromethane; CH ₂ F ₂ ), Trifluoromethane (CHF ₃ ) and/or hexafluoromethane (Difluoromethane; C ₂ F ₆ )), chlorine-containing gases (for example, chlorine (Chlorine; Cl ₂ ), chloroform (Chloroform; CHCl ₃ ), Carbon Tetrachloride (CCl ₄ ), and/or Boron Trichloride (BCl ₃ )), bromine-containing gases (for example, Hydrogen Bromide (HBr) and/or Bromoform; CHBr ₃ )), iodine-containing gas, other suitable etching gases and/or plasma, or combinations thereof.

After the dry etching process for removing the glue, a white photoresist layer can be formed on the first portion 412 of the reflective layer 410 through a coating process. Then, the white photoresist layer is exposed to specific light for exposure. Then, the exposed white photoresist layer is developed to form the second portion 414 of the reflective layer 410 on the first portion 412 of the reflective layer 410 . After forming the second portion 414 of the reflective layer 410, the light-absorbing layer 420 can be formed through a process similar to that used to form the second portion 414, except that the material coated on it is a black photoresist layer.

After the light-absorbing layer 420 is formed, the light-transmitting layer 600 is formed by coating or molding. Finally, a cutting tool is used to cut the insulating layer 110 of the carrier board 100 and form a cutting track. Next, a cutting tool is used to cut the light-transmitting layer 600 and form a package. In another embodiment, the light-transmitting layer 600 is separated first and then the insulating layer 110 of the carrier 100 is separated. In another embodiment, the insulating layer 110 and the light-transmitting layer 600 of the carrier 100 can also be separated simultaneously in a single step.

[display device]

FIG. 4 is a top view of the display device 30 according to yet another embodiment. As shown in FIG. 4 , the display device 30 may include a display substrate 140, a pixel 200, a reflective layer (not shown), a light-absorbing layer 420, and a light-transmitting layer (not shown). The display substrate 140 has a first side 140t1 and a second side 140t2 opposite to each other (refer to FIG. 5 ), and includes a display area 142 in which the pixel 200 is located, wherein the pixel 200 is located on the first side 140t1 of the display substrate 140 . Each pixel 200 includes multiple sub-pixels that can emit different colors of light. For example, each pixel 200 includes three sub-pixels (the first light-emitting unit 210, the second light-emitting unit 220 and the wavelength conversion layer 500, and the third light-emitting unit 230) that can respectively emit blue light, green light and red light. . The number of sub-pixels in the pixel 200 can be three or more, and the sub-pixels can present colors other than the three primary colors (blue, green, and red). For example, one pixel can include a sub-pixel that can present blue-green- Red-cyan (Cyan) sub-pixels of four colors of light. In addition, the definitions of the first light-emitting unit 210, the second light-emitting unit 220, the third light-emitting unit 230 of the pixel 200, and the wavelength conversion layer 500 are the same as mentioned above, and will not be repeated here.

The display substrate 140 may be a thin film transistor (TFT) substrate. The base material of the display substrate 140 may be a rigid structure or a flexible structure. For example, the display substrate 140 may be formed of rigid materials such as glass, silicon, etc., or flexible materials such as polymers, metal foils, etc., and the display substrate 140 has distribution lines to communicate with the pixels 200 and the display area. The micro-driver 144 inside is electrically connected. In some embodiments, the display substrate 140 may be a circuit board with a control circuit and is electrically connected to the pixels 200 .

As shown in FIG. 4 , the display device 30 may include a micro driver 144 configured corresponding to the pixel 200 in the display area, a column driver 124 around the display area and/or a row driver 122 around the display area, and a flexible circuit board 126 . Among them, the column driver 124 and the row driver 122 can be selectively used to cooperate with the micro driver 144 to drive the pixel 200. In other words, the pixel 200 can be controlled only by the micro driver 144. The first light-emitting unit 210, the second light-emitting unit 220, and the third light-emitting unit 230 in the pixel 200 can be electrically connected to the driving first light-emitting unit 210, the second light-emitting unit 220, and the third light-emitting unit through the display substrate 140. 230 corresponding micro-driver 144 within the display area. Column drivers 124 may include separate drivers for each column set of light emitting cells. Row drivers 122 may include separate drivers for each row of sets of light emitting cells. The flexible circuit board 126 may be used to electrically connect the display device 30 to an external system.

Figure 5 is an enlarged cross-sectional view of the dotted line in Figure 4 according to yet another embodiment. Figure 5 is similar to the cross-sectional view of Figure 2. The difference is that Figure 5 shows the structure of the Chip on Board (COB). The die-on-die board directly mounts the bare chips of the light-emitting diodes (the first light-emitting unit 210 , the second light-emitting unit 220 , and the third light-emitting unit 230 ) on the display substrate 140 . Barrier structures 400 are formed between the light emitting diode dies. The encapsulant (light-transmitting layer 600) is coated on the entire surface of the display substrate 140 to cover all the light-emitting diode dies and blocking wall structures.

In another embodiment, the display device is a package on board (POB) structure (not shown). The plurality of pixel packages 10 or multi-pixel packages 20 are arranged in an array on the display substrate 140 , and the lower conductive layer of the pixel package 10 or the multi-pixel package 20 is electrically connected to the display substrate 140 . In addition, the display device may also include a two-color barrier structure 400 of a light-absorbing layer 420 and a reflective layer 410, and a light-transmitting layer 600. For related content, please refer to the above-mentioned relevant paragraphs.

As shown in FIG. 5 , the display substrate 140 further includes a wiring structure 150 located on the first side 140t1, where the wiring structure 150 electrically connects the display substrate 140 to the pixels 200. The wiring structure 150 is, for example, aluminum, copper, or Conductive metal such as gold is electrically connected to the contact electrode of the light-emitting unit through the solder 300 . In another embodiment, the display device is a package upper plate structure (not shown). The plurality of pixel packages 10 or the multi-pixel packages 20 are composed of the following conductive layer through the solder 300 and the first side of the display substrate 140 The wiring structure 150 on 140t1 is electrically connected.

[Process of display device]

First, the bare chips of the light-emitting diodes (the first light-emitting unit 210, the second light-emitting unit 220, and the third light-emitting unit 230) are transferred from a carrier, such as a growth substrate or a temporary substrate, to the display substrate 140. And the light emitting diodes (the first light emitting unit 210, the second light emitting unit 220, and the third light emitting unit 230) and the micro driver 144 are installed on the first side 140t1 of the display substrate 140. The connection methods between the light-emitting diodes and the micro-driver 144 and the display substrate 140 include but are not limited to conductive pads, conductive bumps, and conductive balls. . Specifically, materials suitable for use as conductive pads, conductive bumps, and conductive balls may include low melting point metals or low liquidus melting point (Liquidus Melting Point) alloys, whose melting point or liquidation temperature is lower than 210°C, for example: Bismuth (Bi), tin (Sn), indium (In), or alloys thereof. . For example, the n-type contact electrode 214c and the p-type contact electrode 218c on the micro driver 144 and the light emitting diode are thermocompression bonded to the wiring structure 150 on the display substrate 140. The retaining wall structure 400 is formed between the light emitting diodes. Next, the light-transmitting layer 600 covers the light-emitting diode and the light-absorbing layer 420. The formation method of the above-mentioned barrier structure 400 and the light-transmitting layer 600 can refer to the content of the above-mentioned relevant paragraphs.

In summary, this disclosure provides a pixel package and a display device that use a two-color barrier structure to surround a light-emitting diode. The black light-absorbing layer of the two-color barrier structure can prevent light crosstalk and increase contrast, and the white reflective layer The light emission can be increased to improve the brightness. In addition, by making the ratio of the thickness of the part of the reflective layer located on the light-emitting diode to the thickness of the light-absorbing layer greater than 0 and less than 1/5, the light emission brightness can be further increased while maintaining the black contrast of the surface. Furthermore, by making the angle between the reflective layer and the upper surface of the light-emitting diode a right angle or an obtuse angle, the light emission angle is increased, thereby improving the brightness.

The components of several embodiments are summarized above so that those with ordinary skill in the technical field to which this disclosure belongs can more easily understand the concepts of the embodiments of this disclosure. Those with ordinary skill in the technical field of this disclosure should understand that they can design or modify other processes and structures based on the embodiments of this disclosure to achieve the same purposes and/or advantages as the embodiments introduced here. Those with ordinary knowledge in the technical field to which the present disclosure belongs should also understand that such equivalent processes and structures do not deviate from the spirit and scope of the present disclosure, and they can be used without departing from the spirit and scope of the present disclosure. Make all kinds of changes, substitutions and substitutions.

10: Pixel package 20: Multi-pixel package 30: Display device 100: Carrier board 110: Insulating layer 110t1: First upper surface 110t2: First lower surface 120: Upper conductive layer 122: Row driver 124: Column driver 126: Flexible circuit board 130: Lower conductive layer 140: Display substrate 140t1: First side 140t2: Second side 142: Display area 144: Micro driver 150: Wiring structure 200: Pixel 210: First light emitting unit 210S: First Light emitting surface 210W: first side surface 212: growth substrate 214: n-type semiconductor layer 214c: n-type contact electrode 216: light-emitting layer 218: p-type semiconductor layer 218c: p-type contact electrode 220: second light-emitting unit 220S: second Light-emitting surface 220W: Second side surface 230: Third light-emitting unit 230S: Fourth light-emitting surface 300: Solder 400: Barrier structure 410: Reflective layer 412: First part 412t: Second upper surface 414: Second part 414t: Third Third upper surface 414o: second largest opening 420: light-absorbing layer 420o: first largest opening 500: wavelength conversion layer 500S: third light-emitting surface 500W: third side surface 600: light-transmitting layer D1: distance D2: distance H1: thickness H2: Thickness H3: Thickness 1: Angle X: Coordinate axis Y: Coordinate axis Z: Coordinate axis

The embodiments of the present disclosure can be better understood from the following detailed description together with the accompanying drawings. It should be noted that, in accordance with standard practice in the industry, various features are not drawn to scale and are for illustration only. In fact, the dimensions of various elements may be arbitrarily enlarged or reduced to clearly illustrate the features of the embodiments of the present disclosure. Figure 1A is a top view of a pixel package according to an embodiment of the present disclosure. Figure 1B is a top view of a multi-pixel package according to another embodiment of the present disclosure. Figure 2 is a cross-sectional view of a pixel package according to an embodiment of the present disclosure. Figure 3A is an enlarged view of the dotted line portion of Figure 2 according to an embodiment of the present disclosure. Figure 3B is an enlarged view of the dotted line portion of Figure 2 according to another embodiment of the present disclosure. Figure 4 is a top view of a display device according to yet another embodiment of the present disclosure. Figure 5 is an enlarged cross-sectional view of the dotted line portion of Figure 4 according to yet another embodiment of the present disclosure.

100: Carrier board

110: Insulation layer

110t1: First upper surface

110t2: First lower surface

120: Upper conductive layer

130: Lower conductive layer

210: First light emitting unit

210S: The first shining surface

210W: first side surface

214c: n-type contact electrode

218c: p-type contact electrode

220: Second light-emitting unit

220S: The second light-emitting surface

220W: Second side surface

230: The third light-emitting unit

230S: The fourth light-emitting surface

300:Solder

400:Retaining wall structure

410: Reflective layer

412:Part One

412t: Second upper surface

414:Part 2

414t:Third upper surface

420:Light absorbing layer

500: Wavelength conversion layer

500S: The third light-emitting surface

500W: Third side surface

600: Translucent layer

Y: coordinate axis

Z: coordinate axis

Claims (10)

A pixel package including: a carrier plate having a first upper surface; A pixel is provided on the first upper surface, including: A first light-emitting unit has a first light-emitting surface and a first side surface; a second light-emitting unit having a second light-emitting surface and a second side surface, the second side surface facing the first side surface; and A wavelength conversion layer is provided on the second light-emitting surface and has a third light-emitting surface and a third side surface; A reflective layer having a first part and a second part, the reflective layer is disposed between the first side surface and the second side surface, wherein the second part is located on the first part and has a third upper surface ;and a light-absorbing layer disposed on the third upper surface of the second part; Wherein, the height of the third upper surface of the second part is between the second light-emitting surface and the third light-emitting surface, Wherein, measured from the direction perpendicular to the first upper surface, the thickness ratio of the light-absorbing layer to the second part is greater than 0 and less than or equal to 1/5. The pixel package of claim 1, wherein the third light-emitting surface is a concave arc. The pixel package of claim 1, wherein, viewed from a cross-sectional view, the light-absorbing layer has a first maximum opening on the first light-emitting unit, and the width of the first maximum opening is larger than the first light emitting unit. The width of the face. The pixel package of claim 3, wherein the angle between the side wall of the second part in the second largest opening and the first light-emitting surface is an obtuse angle when viewed from a cross-sectional view. The pixel package of claim 1, wherein, viewed from a cross-sectional view, the second portion has a second maximum opening on the first light-emitting unit, and the width of the second maximum opening is smaller than the first The width of the largest opening. The pixel package as claimed in claim 1, wherein the thickness of the second part is within 5 to 20 range, and the thickness of the light-absorbing layer is within 0.1 to 1 range. The pixel package of claim 1, wherein for the light coming from the first light-emitting unit, the reflectivity of the first part is greater than the reflectance of the second part. The pixel package of claim 1, wherein the first light-emitting unit and the second light-emitting unit are sub-millimeter light-emitting diodes. A display device including: A display substrate having a first side and a second side opposite to each other; A pixel, located on the first side of the display substrate, includes: A first light-emitting unit has a first light-emitting surface and a first side surface; A second light-emitting unit has a second light-emitting surface and a second side surface, and the second side surface and the first side surface are opposite to each other; and A wavelength conversion layer is provided on the second light-emitting surface and has a third light-emitting surface and a third side surface; A reflective layer is disposed on the first side of the display substrate and has a first part and a second part. The reflective layer is disposed between the first side surface and the second side surface, wherein the second part is located on the first part and has a third upper surface; and a light-absorbing layer disposed on the third upper surface of the second part; Wherein, the height of the third upper surface of the second part is between the second light-emitting surface and the third light-emitting surface, Wherein, measured from the direction perpendicular to the first upper surface, the thickness ratio of the light-absorbing layer to the second part is greater than 0 and less than or equal to 1/5. The display device of claim 9 further includes a micro-driver, and the first light-emitting unit and the second light-emitting unit in the pixel are electrically connected to the micro-driver through the display substrate.