TW202404066A - Microscopic light-emitting diode display and manufacturing method thereof - Google Patents
Microscopic light-emitting diode display and manufacturing method thereof Download PDFInfo
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Description
本發明是關於一種微發光二極體顯示器,以及製造此微發光二極體顯示器的方法。The present invention relates to a micro-luminescent diode display and a method for manufacturing the micro-luminescent diode display.
隨著現今科技的進步,各種類型的顯示器已經大幅度地融入了消費者的日常生活中。為要滿足消費者的需求以把握這個龐大的商機,廠商紛紛致力在更佳的成本控制下,提高顯示器的出廠品質。With the advancement of today's technology, various types of displays have been greatly integrated into consumers' daily lives. In order to meet the needs of consumers and seize this huge business opportunity, manufacturers are committed to improving the factory quality of displays under better cost control.
因此,在微發光二極體顯示器的生產過程中,如何在低成本下有效提高生產的良率,無疑是業界是一個非常重視的發展方向。Therefore, in the production process of micro-luminescent diode displays, how to effectively improve the production yield at low cost is undoubtedly a development direction that the industry attaches great importance to.
本發明之目的之一在於提供一種微發光二極體顯示器,其能讓使用者易於對微發光二極體進行更換或維修,從而降低微發光二極體顯示器的製作成本。One object of the present invention is to provide a micro-light-emitting diode display that allows users to easily replace or repair the micro-light-emitting diodes, thereby reducing the manufacturing cost of the micro-light-emitting diode display.
根據本發明的一實施方式,一種微發光二極體顯示器包含第一基板、第二基板、轉色層、第一阻隔部以及微發光二極體。轉色層位於第一基板與第二基板之間,轉色層連接第一基板。第一阻隔部連接第一基板,並圍繞而連接轉色層。微發光二極體位於轉色層與第二基板之間,微發光二極體連接第二基板並與轉色層彼此分離。According to an embodiment of the present invention, a micro-light emitting diode display includes a first substrate, a second substrate, a color transfer layer, a first barrier part and a micro-light emitting diode. The color transfer layer is located between the first substrate and the second substrate, and the color transfer layer is connected to the first substrate. The first barrier part is connected to the first substrate and surrounds and connected to the color transfer layer. The micro-light emitting diode is located between the color transfer layer and the second substrate. The micro-light emitting diode is connected to the second substrate and separated from the color transfer layer.
在本發明一或多個實施方式中,上述之第一阻隔部具有寬度,寬度在朝向第一基板之方向上漸縮。In one or more embodiments of the present invention, the above-mentioned first barrier portion has a width, and the width tapers in a direction toward the first substrate.
在本發明一或多個實施方式中,上述之微發光二極體顯示器更包含第一吸光部。此第一吸光部連接於第一基板與第一阻隔部之間。In one or more embodiments of the present invention, the above-mentioned micro-light emitting diode display further includes a first light-absorbing portion. The first light absorbing part is connected between the first substrate and the first blocking part.
在本發明一或多個實施方式中,上述之微發光二極體顯示器更包含第二阻隔部。此第二阻隔部連接第二基板,並圍繞而連接微發光二極體,第二阻隔部與第一阻隔部彼此分離。In one or more embodiments of the present invention, the above-mentioned micro-light emitting diode display further includes a second blocking portion. The second barrier part is connected to the second substrate and surrounds and connected to the micro-light emitting diode. The second barrier part and the first barrier part are separated from each other.
在本發明一或多個實施方式中,上述之第二阻隔部至少部分位於微發光二極體與第二基板之間。In one or more embodiments of the present invention, the above-mentioned second blocking portion is at least partially located between the micro-light emitting diode and the second substrate.
在本發明一或多個實施方式中,上述之微發光二極體顯示器更包含第二吸光部。此第二吸光部連接於第一阻隔部遠離第一基板之一側,第二吸光部與第二阻隔部彼此分離。In one or more embodiments of the present invention, the above-mentioned micro-light emitting diode display further includes a second light-absorbing portion. The second light absorbing part is connected to a side of the first blocking part away from the first substrate, and the second light absorbing part and the second blocking part are separated from each other.
在本發明一或多個實施方式中,上述之微發光二極體顯示器更包含光學材料。此光學材料至少部分填充於第二吸光部與第二阻隔部之間。In one or more embodiments of the present invention, the above-mentioned micro-light emitting diode display further includes optical materials. The optical material is at least partially filled between the second light absorbing part and the second blocking part.
在本發明一或多個實施方式中,上述之微發光二極體顯示器更包含第三吸光部。此第三吸光部連接於第二阻隔部遠離第二基板之一側,第三吸光部與第二吸光部彼此分離。In one or more embodiments of the present invention, the above-mentioned micro-light emitting diode display further includes a third light-absorbing portion. The third light absorbing part is connected to a side of the second barrier part away from the second substrate, and the third light absorbing part and the second light absorbing part are separated from each other.
在本發明一或多個實施方式中,上述之微發光二極體顯示器更包含光學材料。此光學材料至少部分填充於第三吸光部與第二吸光部之間。In one or more embodiments of the present invention, the above-mentioned micro-light emitting diode display further includes optical materials. The optical material is at least partially filled between the third light absorbing part and the second light absorbing part.
在本發明一或多個實施方式中,上述之微發光二極體顯示器更包含第二吸光部。此第二吸光部連接於第一阻隔部與第二阻隔部之間。In one or more embodiments of the present invention, the above-mentioned micro-light emitting diode display further includes a second light-absorbing portion. The second light absorbing part is connected between the first blocking part and the second blocking part.
在本發明一或多個實施方式中,上述之微發光二極體顯示器更包含第四吸光部以及光學材料。第四吸光部連接第二基板,並圍繞微發光二極體,第四吸光部與第一阻隔部彼此分離。光學材料至少部分填充於第四吸光部與第一阻隔部之間。In one or more embodiments of the present invention, the above-mentioned micro-light emitting diode display further includes a fourth light-absorbing part and an optical material. The fourth light-absorbing part is connected to the second substrate and surrounds the micro-light-emitting diode. The fourth light-absorbing part and the first blocking part are separated from each other. The optical material is at least partially filled between the fourth light absorbing part and the first blocking part.
在本發明一或多個實施方式中,上述之第一阻隔部包含吸光材料。In one or more embodiments of the present invention, the above-mentioned first blocking part includes a light-absorbing material.
在本發明一或多個實施方式中,上述之微發光二極體顯示器更包含顏色過濾層。此顏色過濾層連接於第一基板與轉色層之間。In one or more embodiments of the present invention, the micro-LED display further includes a color filter layer. The color filter layer is connected between the first substrate and the color transfer layer.
在本發明一或多個實施方式中,上述之微發光二極體顯示器更包含圖案化光學塗層。此圖案化光學塗層至少部分連接於微發光二極體與轉色層之間,圖案化光學塗層相較微發光二極體更寬。In one or more embodiments of the present invention, the above-mentioned micro-light emitting diode display further includes a patterned optical coating. The patterned optical coating is at least partially connected between the microluminescent diode and the color transfer layer, and the patterned optical coating is wider than the microluminescent diode.
在本發明一或多個實施方式中,上述之圖案化光學塗層具有斜面,此斜面連接並圍繞微發光二極體,斜面與轉色層之間形成若干角度,此角度之範圍為30度與90度之間。In one or more embodiments of the present invention, the above-mentioned patterned optical coating has a bevel, which is connected to and surrounds the micro-luminescent diode, and a certain angle is formed between the bevel and the color transfer layer. The range of this angle is 30 degrees. between 90 degrees.
本發明之目的之一在於提供一種微發光二極體顯示器的製造方法,其能製造出易於更換或維修微發光二極體的顯示器,從而降低微發光二極體顯示器的製作成本。One object of the present invention is to provide a method for manufacturing a micro-light emitting diode display, which can manufacture a display in which the micro-light emitting diodes are easy to replace or repair, thereby reducing the manufacturing cost of the micro-light emitting diode display.
根據本發明的一實施方式,一種微發光二極體顯示器的製造方法包含:製造上結構以及製造下結構。製造上結構包含:於第一底板上設置第一基板;於第一基板上設置複數個顏色過濾層以及第一吸光部,第一吸光部連接而圍繞每個顏色過濾層;於第一吸光部上設置第一阻隔部,而第一阻隔部之剖面至少部分呈倒錐形,且第一阻隔部具有複數個空間,這些空間分別連通對應之顏色過濾層;以及於空間中之至少一設置轉色層,並使轉色層連接第一阻隔部。製造下結構包含:於第二底板上設置第二基板;於第二基板上設置複數個微發光二極體;以及於第二基板上設置第二阻隔部,並使第二阻隔部圍繞微發光二極體。製造方法更包含:相對下結構翻轉上結構,以使微發光二極體分別對齊對應之空間,並使上結構與下結構彼此連接;以及移除第一底板及第二底板。According to an embodiment of the present invention, a method for manufacturing a micro-light emitting diode display includes manufacturing an upper structure and a lower structure. The manufacturing structure includes: arranging a first substrate on the first base plate; arranging a plurality of color filter layers and a first light-absorbing part on the first substrate, and the first light-absorbing parts are connected to surround each color filter layer; A first blocking part is provided on the top, and the cross section of the first blocking part is at least partially inverted cone shape, and the first blocking part has a plurality of spaces, and these spaces are respectively connected to the corresponding color filter layers; and at least one rotation is arranged in the space. The color layer is connected to the first barrier part. Manufacturing the lower structure includes: arranging a second substrate on the second base plate; arranging a plurality of micro-luminescent diodes on the second substrate; and arranging a second barrier portion on the second substrate and surrounding the micro-luminescent diodes with the second barrier portion. diode. The manufacturing method further includes: flipping the upper structure relative to the lower structure so that the micro-light emitting diodes are aligned with corresponding spaces respectively, and connecting the upper structure and the lower structure to each other; and removing the first base plate and the second base plate.
在本發明一或多個實施方式中,上述使上結構與下結構彼此連接的步驟包含:以光學材料連接於上結構與下結構之間,並維持轉色層與對應之微發光二極體彼此分離。In one or more embodiments of the present invention, the step of connecting the upper structure and the lower structure to each other includes: connecting the upper structure and the lower structure with an optical material, and maintaining the color transfer layer and the corresponding micro-light emitting diode. separated from each other.
在本發明一或多個實施方式中,上述使上結構與下結構彼此連接的步驟包含:以框體連接於上結構與下結構之間,並維持轉色層與對應之微發光二極體彼此分離。In one or more embodiments of the present invention, the step of connecting the upper structure and the lower structure to each other includes: connecting the upper structure and the lower structure with a frame, and maintaining the color transfer layer and the corresponding micro-light emitting diode. separated from each other.
在本發明一或多個實施方式中,上述之製造下結構的步驟包含:於微發光二極體上分別設置圖案化光學塗層。In one or more embodiments of the present invention, the above-mentioned step of manufacturing the lower structure includes: respectively providing patterned optical coatings on the micro-light emitting diodes.
在本發明一或多個實施方式中,上述之第二阻隔部包含吸光材料。In one or more embodiments of the present invention, the above-mentioned second blocking part includes a light-absorbing material.
本發明上述實施方式至少具有以下優點:由於微發光二極體顯示器係由上結構及下結構連接而成,而連接於第二基板的微發光二極體與連接於第一基板的轉色層彼此分離,亦即微發光二極體與轉色層之間没有直接的接觸,因此,當微發光二極體需要更換或維修時,使用者僅需把上結構及下結構兩者拆開,便可對微發光二極體進行更換或維修,過程不涉及轉色層的破壞或移除,故能有效提高微發光二極體的生產良率,進而可降低微發光二極體顯示器的製作成本。The above-mentioned embodiments of the present invention at least have the following advantages: since the micro-luminescent diode display is composed of an upper structure and a lower structure, the micro-luminescent diode connected to the second substrate and the color transfer layer connected to the first substrate are separated from each other, that is, there is no direct contact between the micro-LED and the color transfer layer. Therefore, when the micro-LED needs to be replaced or repaired, the user only needs to disassemble the upper structure and the lower structure. Micro-light-emitting diodes can be replaced or repaired, and the process does not involve the destruction or removal of the color transfer layer. Therefore, the production yield of micro-light-emitting diodes can be effectively improved, thereby reducing the production cost of micro-light-emitting diode displays. cost.
以下將以圖式揭露本發明之複數個實施方式,為明確說明起見,許多實務上的細節將在以下敘述中一併說明。然而,應瞭解到,這些實務上的細節不應用以限制本發明。也就是說,在本發明部分實施方式中,這些實務上的細節是非必要的。此外,為簡化圖式起見,一些習知慣用的結構與元件在圖式中將以簡單示意的方式繪示之,而在所有圖式中,相同的標號將用於表示相同或相似的元件。且若實施上為可能,不同實施例的特徵係可以交互應用。A plurality of embodiments of the present invention will be disclosed in the drawings below. For clarity of explanation, many practical details will be explained in the following description. However, it will be understood that these practical details should not limit the invention. That is to say, in some embodiments of the present invention, these practical details are not necessary. In addition, for the sake of simplifying the drawings, some commonly used structures and components are illustrated in the drawings in a simple schematic manner, and the same reference numerals are used to represent the same or similar components in all the drawings. . And if possible in implementation, features of different embodiments can be applied interchangeably.
除非另有定義,本文所使用的所有詞彙(包括技術和科學術語)具有其通常的意涵,其意涵係能夠被熟悉此領域者所理解。更進一步的說,上述之詞彙在普遍常用之字典中之定義,在本說明書的內容中應被解讀為與本發明相關領域一致的意涵。除非有特別明確定義,這些詞彙將不被解釋為理想化的或過於正式的意涵。Unless otherwise defined, all terms (including technical and scientific terms) used herein have their ordinary meanings that can be understood by one familiar with the art. Furthermore, the definitions of the above-mentioned words in commonly used dictionaries should be interpreted as meanings consistent with the relevant fields of the present invention in the content of this specification. Unless specifically defined, these terms will not be interpreted as having an idealized or overly formal meaning.
請參照第1圖。第1圖為繪示依照本發明一實施方式之微發光二極體(microscopic light-emitting diode;micro-LED)顯示器的製造方法500的流程圖。在本實施方式中,如第1圖所示,一種微發光二極體顯示器的製造方法500包含以下步驟(應了解到,在一些實施方式中所提及的步驟,除特別敘明其順序者外,均可依實際需要調整其前後順序,甚至可同時或部分同時執行):Please refer to picture 1. Figure 1 is a flow chart illustrating a method 500 for manufacturing a microscopic light-emitting diode (micro-LED) display according to an embodiment of the present invention. In this embodiment, as shown in Figure 1 , a method 500 for manufacturing a micro-light emitting diode display includes the following steps (it should be understood that the steps mentioned in some embodiments, unless the order is specifically stated In addition, the sequence can be adjusted according to actual needs, and can even be executed simultaneously or partially simultaneously):
(1)製造上結構US(步驟510)。請參照第2~6圖。第2~6圖為繪示第1圖之上結構US的製造過程的示意圖。具體而言,製造上結構US的步驟(即步驟510)更包含:(1) Fabricate the upper structure US (step 510). Please refer to Figures 2 to 6. Figures 2 to 6 are schematic diagrams illustrating the manufacturing process of the structure US shown in Figure 1 . Specifically, the step of manufacturing the upper structure US (ie step 510) further includes:
(1.1)於第一底板210上設置第一基板110(步驟511)。如第2圖所示,第一基板110已設置於第一底板210上。(1.1) Set the
(1.2)於第一基板110上設置複數個顏色過濾層170以及第一吸光部161,第一吸光部161連接而圍繞每個顏色過濾層170(步驟512)。如第3圖所示,三個顏色過濾層170已設置於第一基板110上。實際上,三個顏色過濾層170的顏色是相異的。例如,在第3圖中從左到右排列的顏色過濾層170可分別為紅色的顏色過濾層170R、綠色的顏色過濾層170G及藍色的顏色過濾層170B。再者,第一吸光部161連接而圍繞每個顏色過濾層170。(1.2) A plurality of color filter layers 170 and first light absorbing parts 161 are provided on the
(1.3)於第一吸光部161上設置第一阻隔部141,而第一阻隔部141之剖面至少部分呈倒錐形,且第一阻隔部141具有複數個空間SP,空間SP分別連通對應之顏色過濾層170(步驟513)。如第4圖所示,第一阻隔部141設置第一吸光部161上,且第一吸光部161連接於第一基板110與第一阻隔部141之間,而第一阻隔部141之剖面至少部分呈倒錐形。換句話說,第一阻隔部141之剖面的寬度WD在朝向第一基板110之方向上漸縮,亦即第一阻隔部141遠離第一基板110之一側的寬度,大於第一阻隔部141接近第一基板110之一側的寬度。(1.3) A first blocking part 141 is provided on the first light-absorbing part 161, and the cross section of the first blocking part 141 is at least partially inverted cone shape, and the first blocking part 141 has a plurality of spaces SP, and the spaces SP are connected to the corresponding spaces respectively. Color filter layer 170 (step 513). As shown in Figure 4, the first blocking part 141 is disposed on the first light absorbing part 161, and the first light absorbing part 161 is connected between the
(1.4)於空間SP中之至少一設置轉色層130,並使轉色層130連接第一阻隔部141(步驟514)。舉例而言,如上所述,位於第5圖中最左邊的顏色過濾層170為紅色的顏色過濾層170R。如第5圖所示,對應於此紅色的顏色過濾層170R的空間SP設置有紅色的轉色層130R,並且紅色的顏色過濾層170R連接於第一基板110與紅色的轉色層130R之間。再者,第一阻隔部141圍繞而連接紅色的轉色層130R,而第一阻隔部141可對轉色層130提供光學阻隔及物理阻隔的功能。(1.4) Set the color transfer layer 130 in at least one of the spaces SP, and connect the color transfer layer 130 to the first barrier portion 141 (step 514). For example, as mentioned above, the leftmost color filter layer 170 in FIG. 5 is a red color filter layer 170R. As shown in FIG. 5 , a red color transfer layer 130R is provided in the space SP corresponding to the red color filter layer 170R, and the red color filter layer 170R is connected between the
(1.5)於其餘的空間SP填充第一光學材料OM1,並使第一光學材料OM1連接第一阻隔部141(步驟515)。舉例而言,在第6圖中,如上所述,排列於中間的顏色過濾層170為綠色的顏色過濾層170G,而位於最右邊的顏色過濾層170則為藍色的顏色過濾層170B。如第6圖所示,對應於綠色的顏色過濾層170G及藍色的顏色過濾層170B的空間SP皆設置有第一光學材料OM1,而第一光學材料OM1連接於第一阻隔部141。在實務的應用中,第一光學材料OM1的厚度小於或等於第一阻隔部141的厚度。(1.5) Fill the remaining space SP with the first optical material OM1, and connect the first optical material OM1 to the first blocking part 141 (step 515). For example, in FIG. 6 , as mentioned above, the color filter layer 170 arranged in the middle is a green color filter layer 170G, and the color filter layer 170 located on the far right is a blue color filter layer 170B. As shown in FIG. 6 , the space SP corresponding to the green color filter layer 170G and the blue color filter layer 170B is provided with the first optical material OM1 , and the first optical material OM1 is connected to the first blocking part 141 . In practical applications, the thickness of the first optical material OM1 is less than or equal to the thickness of the first blocking part 141 .
此時,上結構US亦告製造完成。At this time, the upper structure US is also completed.
(2)製造下結構LS(步驟520)。請參照第7~10圖。第7~10圖為繪示第1圖之下結構LS的製造過程的示意圖。具體而言,製造下結構LS的步驟(即步驟520)更包含:。(2) Fabricate the lower structure LS (step 520). Please refer to Figures 7 to 10. Figures 7 to 10 are schematic diagrams illustrating the manufacturing process of the structure LS shown in Figure 1 . Specifically, the step of manufacturing the lower structure LS (ie step 520) further includes:.
(2.1)於第二底板220上設置第二基板120(步驟521)。如第7圖所示,第二基板120已設置於第二底板220上。(2.1) Set the
(2.2)於第二基板120上設置複數個微發光二極體150(步驟522)。如第8圖所示,三個微發光二極體150已設置於第二基板120上。舉例而言,在這三個微發光二極體150中,排列於中間的為可發出綠光的微發光二極體150G,而位於兩側的則為可發出藍光的微發光二極體150B。在其他實施方式中,這三個微發光二極體150可皆為可發出藍光的微發光二極體150B,或者,在這三個微發光二極體150中,位於兩側者中之其一為可發出紅光的微發光二極體150,而其餘兩個微發光二極體150側為可發出藍光的微發光二極體150B。(2.2) Arrange a plurality of
(2.3)於第二基板120上設置第二阻隔部142,並使第二阻隔部142圍繞每個微發光二極體150(步驟523)。如第9圖所示,第二阻隔部142已設置於第二基板120上,且第二阻隔部142圍繞每個微發光二極體150。在本實施方式中,第二阻隔部142更至少部分連接微發光二極體150。(2.3) Set the second barrier portion 142 on the
(2.4)於微發光二極體150上分別設置圖案化光學塗層180(步驟524)。如第10圖所示,圖案化光學塗層180已分別設置於三個微發光二極體150上。值得注意的是,圖案化光學塗層180相較微發光二極體150更寬,亦即圖案化光學塗層180的寬度大於對應之微發光二極體150的寬度。更具體而言,圖案化光學塗層180的尺寸大於微發光二極體150的尺寸但小於或等於第一阻隔部141所圍繞的空間SP。(2.4) Set patterned optical coatings 180 on the micro-light emitting diodes 150 (step 524). As shown in FIG. 10 , the patterned optical coatings 180 have been respectively disposed on the three
進一步而言,製造方法500更包含:Furthermore, the manufacturing method 500 further includes:
(3)相對下結構LS翻轉上結構US,以使微發光二極體150分別對齊對應之空間SP,並使上結構US與下結構LS彼此連接(步驟530)。請參照第11~12圖。第11圖為繪示第6圖之上結構US與第10圖之下結構LS的連接的示意圖。第12圖為繪示第11圖之微發光二極體顯示器100,其中上結構US與下結構LS已彼此連接,而第一底板210及第二底板220已被移除。如第11圖所示,上結構US已相對下結構LS翻轉,而微發光二極體150分別對齊對應之空間SP。具體而言,在第11圖中,紅色的顏色過濾層170R及紅色的轉色層130R對齊可發出藍光的微發光二極體150B,綠色的顏色過濾層170G及第一光學材料OM1對齊可發出綠光的微發光二極體150G,而藍色的顏色過濾層170B及第一光學材料OM1對齊可發出藍光的微發光二極體150B。再者,在本實施方式中,如第12圖所示,上結構US與下結構LS彼此連接的方式,係以框體190連接於上結構US與下結構LS之間,並維持紅色的轉色層130R與對應之可發出藍光的微發光二極體150B彼此分離。而且,第二阻隔部142與第一阻隔部141亦彼此分離。更具體而言,框體190連接於上結構US的第一基板110與下結構LS的第二阻隔部142之間,而上結構US與下結構LS之間至少部分以空氣彼此隔開。(3) Flip the upper structure US relative to the lower structure LS, so that the
(4)移除第一底板210及第二底板220(步驟540)。如第12圖所示,第一底板210及第二底板220已被移除,而微發光二極體顯示器100的製作亦告完成。(4) Remove the
值得注意的是,由於微發光二極體顯示器100係由上結構US及下結構LS連接而成,而連接於第二基板120的微發光二極體150與連接於第一基板110的轉色層130彼此分離,亦即微發光二極體150與轉色層130之間没有直接的接觸,因此,當微發光二極體150需要更換或維修時,使用者僅需把上結構US及下結構LS兩者拆開,便可對微發光二極體150進行更換或維修,過程不涉及轉色層130的破壞或移除,故能有效提高微發光二極體150的生產良率,進而可降低微發光二極體顯示器100的製作成本。It is worth noting that since the micro-light-emitting diode display 100 is connected by the upper structure US and the lower structure LS, the micro-light-emitting
進一步而言,如上所述,紅色的轉色層130R對齊可發出藍光的微發光二極體150B,而第一光學材料OM1則分別對齊可發出綠光及可發出藍光的微發光二極體150G、150B,換句話說,在配對上結構US與下結構LS時,只有一個紅色的轉色層130R的上結構US係適於對應具有兩個可發出藍光的微發光二極體150B及一個可發出綠光的微發光二極體150G的下結構LS。另外,只有一個綠色的轉色層130的上結構US則適於對應具有一個可發出紅光的微發光二極體150及兩個可發出藍光的微發光二極體150B的下結構LS。再者,根據實際狀況,使用者可使用三個可發出藍光的微發光二極體150B,並分別配置以對齊紅色的轉色層130R、綠色的轉色層130及第一光學材料OM1,以得出紅綠藍光的組合。或者,根據實際狀況,使用者可使用三個可發出紫外光的微發光二極體150,並分別配置以對齊紅色的轉色層130R、綠色的轉色層130及藍色的轉色層130,以得出紅綠藍光的組合。然而,本發明並未限制微發光二極體顯示器100只能發出紅綠藍光的組合。根據實際狀況,使用者亦可配搭不同的微發光二極體150以及不同顏色的轉色層130,以使微發光二極體顯示器100可發射出白光。Furthermore, as mentioned above, the red color transfer layer 130R is aligned with the
進一步而言,如第12圖所示,圖案化光學塗層180至少部分連接於微發光二極體150與轉色層130之間,或是至少部分連接於微發光二極體150與第一光學材料OM1之間。Furthermore, as shown in FIG. 12 , the patterned optical coating 180 is at least partially connected between the micro-light-emitting
請參照第13圖。第13圖為繪示依照本發明另一實施方式之微發光二極體顯示器100的剖面示意圖。在本實施方式中,如第13圖所示,微發光二極體顯示器100更包含第二吸光部162。第二吸光部162連接於第一阻隔部141與第二阻隔部142之間。再者,在本實施方式中,微發光二極體顯示器100不包含上述的圖案化光學塗層180,而轉色層130及第一光學材料OM1分別與對應之微發光二極體150彼此分離。Please refer to Figure 13. FIG. 13 is a schematic cross-sectional view of a micro-light emitting diode display 100 according to another embodiment of the present invention. In this embodiment, as shown in FIG. 13 , the micro-LED display 100 further includes a second light-absorbing portion 162 . The second light absorbing part 162 is connected between the first blocking part 141 and the second blocking part 142 . Furthermore, in this embodiment, the micro-light emitting diode display 100 does not include the above-mentioned patterned optical coating 180, and the color transfer layer 130 and the first optical material OM1 are respectively separated from the corresponding
請參照第14圖。第14圖為繪示依照本發明再一實施方式之微發光二極體顯示器100的剖面示意圖。在本實施方式中,如第14圖所示,微發光二極體顯示器100包含第二吸光部162及第三吸光部163。第二吸光部162連接於第一阻隔部141遠離第一基板110之一側,而第三吸光部163連接於第二阻隔部142遠離第二基板120之一側。在本實施方式中,第三吸光部163與第二吸光部162彼此分離。Please refer to Figure 14. FIG. 14 is a schematic cross-sectional view of a micro-light emitting diode display 100 according to yet another embodiment of the present invention. In this embodiment, as shown in FIG. 14 , the micro-light emitting diode display 100 includes a second light absorbing part 162 and a third light absorbing part 163 . The second light absorbing part 162 is connected to a side of the first blocking part 141 away from the
再者,在本實施方式中,如第14圖所示,圖案化光學塗層180至少部分連接於微發光二極體150與轉色層130之間,而圖案化光學塗層180相較微發光二極體150更寬。更具體而言,圖案化光學塗層180具有斜面180a,斜面180a連接並圍繞微發光二極體150,而且,斜面180a與轉色層130之間形成角度θ。在實務的應用中,為要控制微發光二極體150的出光角度,角度θ之範圍為30度與90度之間。Furthermore, in this embodiment, as shown in FIG. 14 , the patterned optical coating 180 is at least partially connected between the
進一步而言,如第14圖所示,第二阻隔部142至少部分位於微發光二極體150與第二基板120之間。更具體而言,第二阻隔部142可至少部分填充於微發光二極體150朝向第二基板120的接腳間。Furthermore, as shown in FIG. 14 , the second blocking portion 142 is at least partially located between the
請參照第15圖。第15圖為繪示依照本發明又一實施方式之微發光二極體顯示器100的剖面示意圖。在本實施方式中,如第15圖所示,上結構US與下結構LS彼此連接的方式,係以第二光學材料OM2連接於上結構US與下結構LS之間,並維持轉色層130與對應之微發光二極體150彼此分離。Please refer to Figure 15. FIG. 15 is a schematic cross-sectional view of a micro-light emitting diode display 100 according to another embodiment of the present invention. In this embodiment, as shown in FIG. 15 , the upper structure US and the lower structure LS are connected to each other by using the second optical material OM2 to connect between the upper structure US and the lower structure LS and maintain the color transfer layer 130 The corresponding
具體而言,如第15圖所示,圖案化光學塗層180至少部分連接於微發光二極體150與轉色層130之間。另外,微發光二極體顯示器100包含第二吸光部162而不包含上述的第三吸光部163。第二吸光部162連接於第一阻隔部141遠離第一基板110之一側,且第二吸光部162與第二阻隔部142彼此分離。更具體而言,第二光學材料OM2至少部分填充於第二吸光部162與第二阻隔部142之間。Specifically, as shown in FIG. 15 , the patterned optical coating 180 is at least partially connected between the
請參照第16圖。第16圖為繪示依照本發明另一實施方式之微發光二極體顯示器100的剖面示意圖。在本實施方式中,如第16圖所示,微發光二極體顯示器100不包含上述的圖案化光學塗層180,而轉色層130及第一光學材料OM1分別與對應之微發光二極體150以第二光學材料OM2彼此分隔。再者,微發光二極體顯示器100包含第二吸光部162及第三吸光部163。第二吸光部162連接於第一阻隔部141遠離第一基板110之一側,而第三吸光部163連接於第二阻隔部142遠離第二基板120之一側。在本實施方式中,第三吸光部163與第二吸光部162以第二光學材料OM2彼此分隔。Please refer to Figure 16. FIG. 16 is a schematic cross-sectional view of a micro-light emitting diode display 100 according to another embodiment of the present invention. In this embodiment, as shown in FIG. 16 , the micro-luminescent diode display 100 does not include the above-mentioned patterned optical coating 180 , but the color transfer layer 130 and the first optical material OM1 are respectively connected with the corresponding micro-luminescent diodes. The
請參照第17圖。第17圖為繪示依照本發明再一實施方式之微發光二極體顯示器100的剖面示意圖。在本實施方式中,如第17圖所示,第一阻隔部141包含吸光材料。具體而言,第一阻隔部141可與第一吸光部161一體成型。Please refer to Figure 17. FIG. 17 is a schematic cross-sectional view of a micro-light emitting diode display 100 according to yet another embodiment of the present invention. In this embodiment, as shown in FIG. 17, the first blocking part 141 includes a light-absorbing material. Specifically, the first blocking part 141 can be integrally formed with the first light absorbing part 161 .
請參照第18圖。第18圖為繪示依照本發明又一實施方式之微發光二極體顯示器100的剖面示意圖。在本實施方式中,第二阻隔部142可包含吸光材料而形成第四吸光部164。如第18圖所示,第四吸光部164連接第二基板120,並圍繞微發光二極體150,第四吸光部164與微發光二極體150彼此分離。再者,第四吸光部164與第一阻隔部141彼此分離,而第二光學材料OM2至少部分填充於第四吸光部164與第一阻隔部141之間,以及填充於第四吸光部164與微發光二極體150之間。Please refer to Figure 18. FIG. 18 is a schematic cross-sectional view of a micro-light emitting diode display 100 according to another embodiment of the present invention. In this embodiment, the second blocking part 142 may include a light-absorbing material to form the fourth light-absorbing part 164 . As shown in FIG. 18 , the fourth light absorbing part 164 is connected to the
綜上所述,本發明上述實施方式所揭露的技術方案至少具有以下優點:由於微發光二極體顯示器係由上結構及下結構連接而成,而連接於第二基板的微發光二極體與連接於第一基板的轉色層彼此分離,亦即微發光二極體與轉色層之間没有直接的接觸,因此,當微發光二極體需要更換或維修時,使用者僅需把上結構及下結構兩者拆開,便可對微發光二極體進行更換或維修,過程不涉及轉色層的破壞或移除,故能有效提高微發光二極體的生產良率,進而可降低微發光二極體顯示器的製作成本。To sum up, the technical solutions disclosed in the above embodiments of the present invention have at least the following advantages: since the micro-light emitting diode display is composed of an upper structure and a lower structure, the micro-light emitting diodes connected to the second substrate It is separated from the color transfer layer connected to the first substrate, that is, there is no direct contact between the micro light emitting diode and the color transfer layer. Therefore, when the micro light emitting diode needs to be replaced or repaired, the user only needs to By disassembling the upper structure and lower structure, the micro-light-emitting diodes can be replaced or repaired. The process does not involve the destruction or removal of the color transfer layer, so the production yield of micro-light-emitting diodes can be effectively improved, thereby further improving the production yield of micro-light-emitting diodes. The production cost of the micro-light emitting diode display can be reduced.
雖然本發明已以實施方式揭露如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone skilled in the art can make various modifications and modifications without departing from the spirit and scope of the present invention. Therefore, the protection of the present invention is The scope shall be determined by the appended patent application scope.
100:微發光二極體顯示器
110:第一基板
120:第二基板
130,130R:轉色層
141:第一阻隔部
142:第二阻隔部
150,150B,150G:微發光二極體
161:第一吸光部
162:第二吸光部
163:第三吸光部
164:第四吸光部
170,170B,170G,170R:顏色過濾層
180:圖案化光學塗層
180a:斜面
190:框體
210:第一底板
220:第二底板
500:製造方法
510-540,511-515,521-524:步驟
LS:下結構
OM1:第一光學材料
OM2:第二光學材料
SP:空間
US:上結構
WD:寬度
θ:角度
100:Micro light emitting diode display
110: First substrate
120: Second substrate
130,130R: color transfer layer
141:First blocking part
142:
第1圖為繪示依照本發明一實施方式之微發光二極體顯示器的製造方法的流程圖。 第2~6圖為繪示第1圖之上結構的製造過程的示意圖。 第7~10圖為繪示第1圖之下結構的製造過程的示意圖。 第11圖為繪示第6圖之上結構與第10圖之下結構的連接的示意圖。 第12圖為繪示第11圖之微發光二極體顯示器,其中上結構與下結構已彼此連接,而第一底板及第二底板已被移除。 第13~18圖為繪示依照本發明不同實施方式之微發光二極體顯示器的剖面示意圖。 FIG. 1 is a flow chart illustrating a method of manufacturing a micro-light emitting diode display according to an embodiment of the present invention. Figures 2 to 6 are schematic diagrams illustrating the manufacturing process of the structure shown in Figure 1 . Figures 7 to 10 are schematic diagrams illustrating the manufacturing process of the structure shown in Figure 1 . Figure 11 is a schematic diagram illustrating the connection between the upper structure of Figure 6 and the lower structure of Figure 10. Figure 12 shows the micro-light emitting diode display of Figure 11, in which the upper structure and the lower structure have been connected to each other, and the first bottom plate and the second bottom plate have been removed. Figures 13 to 18 are schematic cross-sectional views of micro-light emitting diode displays according to different embodiments of the present invention.
國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無 Domestic storage information (please note in order of storage institution, date and number) without Overseas storage information (please note in order of storage country, institution, date, and number) without
100:微發光二極體顯示器 100:Micro light emitting diode display
110:第一基板 110: First substrate
120:第二基板 120: Second substrate
130:轉色層 130: Color transfer layer
141:第一阻隔部 141:First blocking part
142:第二阻隔部 142:Second blocking part
150:微發光二極體 150:Micro light emitting diode
161:第一吸光部 161: First light absorption part
162:第二吸光部 162: Second light absorption part
163:第三吸光部 163: The third light absorption part
170:顏色過濾層 170: Color filter layer
180:圖案化光學塗層 180:Patterned optical coating
180a:斜面 180a: Bevel
190:框體 190:Frame
LS:下結構 LS: lower structure
SP:空間 SP:space
US:上結構 US: upper structure
θ:角度 θ: angle
Claims (20)
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| US8896125B2 (en) * | 2011-07-05 | 2014-11-25 | Sony Corporation | Semiconductor device, fabrication method for a semiconductor device and electronic apparatus |
| US9035286B2 (en) * | 2013-02-19 | 2015-05-19 | Au Optronics Corporation | Multi-color light emitting diode and method for making same |
| CN112234078B (en) * | 2019-06-30 | 2022-11-01 | 成都辰显光电有限公司 | Color conversion assembly and display device |
| US20210327973A1 (en) * | 2020-04-17 | 2021-10-21 | Samsung Display Co., Ltd. | Display device |
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