TW202339406A - High voltage gain DC converter which uses two coupling inductors for voltage doubling without requiring operation at a maximum conduction ratio - Google Patents
High voltage gain DC converter which uses two coupling inductors for voltage doubling without requiring operation at a maximum conduction ratio Download PDFInfo
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Abstract
Description
本發明是有關於一種電壓轉換技術,特別是指一種高電壓增益直流轉換器。The present invention relates to a voltage conversion technology, in particular to a high voltage gain DC converter.
參閱圖1,一種習知的升壓轉換器,習知的升壓轉換器操作在極高導通比才能達到較高電壓增益 ,參數V O、V in、D分別為輸出電壓、輸入電壓、開關的責任導通比,但是實務上受到寄生元件的影響,當導通比超過0.9以上時而使電壓增益不增反減,不符高電壓增益的需求,因此,無需極高導通比且同時為符合高電壓增益的需求的高升壓轉換器是未來的研究方向。 Referring to Figure 1, a conventional boost converter is shown. The conventional boost converter operates at an extremely high conduction ratio to achieve a higher voltage gain. , the parameters V O , V in , and D are the output voltage, input voltage, and the duty conduction ratio of the switch respectively. However, in practice, they are affected by parasitic components. When the conduction ratio exceeds 0.9, the voltage gain does not increase but decreases, which is not high. Therefore, high boost converters that do not require extremely high conduction ratios and at the same time meet the requirements of high voltage gain are future research directions.
因此,本發明的一目的,即在提供一種能夠克服先前技術缺點的高電壓增益直流轉換器。Therefore, an object of the present invention is to provide a high voltage gain DC converter that can overcome the shortcomings of the prior art.
於是,高電壓增益直流轉換器包括一個第一耦合電感、一個第二耦合電感、一第一開關、一第二開關、一第一箝位二極體、一第二箝位二極體、第一再生二極體、一第一再生電容、一第一倍壓二極體、一第一倍壓電容、一第二再生二極體、一第二再生電容、一第二倍壓二極體、一第二倍壓電容、一第一輸出級、一第二輸出級與一第三輸出級。Therefore, the high voltage gain DC converter includes a first coupling inductor, a second coupling inductor, a first switch, a second switch, a first clamping diode, a second clamping diode, a third A regenerative diode, a first regenerative capacitor, a first voltage doubling diode, a first voltage doubling capacitor, a second regenerative diode, a second regenerative capacitor, and a second voltage doubling diode body, a second voltage doubling capacitor, a first output stage, a second output stage and a third output stage.
每一個耦合電感具有一第一繞組、一第二繞組及一第三繞組,每一個繞組具有一第一端及一第二端,其中,該第一耦合電感的第一繞組的第一端與該第二耦合電感的第一繞組的第一端電連接一起以接收一呈直流的輸入電壓,該第一耦合電感的第二繞組的第二端電連接該第二耦合電感的第二繞組的第二端,該第一耦合電感的第三繞組的第二端電連接該第二耦合電感的第三繞組的第二端。Each coupled inductor has a first winding, a second winding and a third winding, and each winding has a first end and a second end, wherein the first end of the first winding of the first coupled inductor and The first end of the first winding of the second coupled inductor is electrically connected together to receive a DC input voltage, and the second end of the second winding of the first coupled inductor is electrically connected to the second end of the second winding of the second coupled inductor. The second end of the third winding of the first coupling inductor is electrically connected to the second end of the third winding of the second coupling inductor.
第一開關具有一電連接於該第一耦合電感的第一繞組的第二端的第一端,及一接地的第二端,且該第一開關受控制以切換於導通狀態和不導通狀態間,當該第一開關導通時,該第一耦合電感的第一繞組接收一電流進行充電。第二開關具有一電連接於該第二耦合電感的第一繞組的第二端的第一端,及一接地的第二端,且該第二開關受控制以切換於導通狀態和不導通狀態間。The first switch has a first end electrically connected to the second end of the first winding of the first coupling inductor, and a second end grounded, and the first switch is controlled to switch between a conductive state and a non-conductive state. , when the first switch is turned on, the first winding of the first coupling inductor receives a current for charging. The second switch has a first end electrically connected to the second end of the first winding of the second coupling inductor, and a second end grounded, and the second switch is controlled to switch between a conductive state and a non-conductive state. .
第一箝位二極體具有一電連接於該第一耦合電感的第一繞組的第二端的陽極,與一陰極。第二箝位二極體具有一電連接於該第二耦合電感的第一繞組的第二端的陽極,與一陰極,該第一箝位二極體的陰極與該第二箝位二極體的陰極電連接一共同接點。The first clamping diode has an anode electrically connected to the second end of the first winding of the first coupling inductor, and a cathode. The second clamping diode has an anode electrically connected to the second end of the first winding of the second coupling inductor, and a cathode. The cathode of the first clamping diode is connected to the second clamping diode. The cathode is electrically connected to a common contact.
第一再生二極體具有一電連接該第二耦合電感的第二繞組的第一端的陽極,與一陰極。第一再生電容電連接該第一耦合電感的第二繞組的第一端與該第一再生二極體的陰極之間。第一倍壓二極體具有一電連接該第一再生二極體的陰極的陽極,與一陰極。一第一倍壓電容電連接該第二耦合電感的第二繞組的第一端與該第一倍壓二極體的陰極之間。The first regenerative diode has an anode electrically connected to the first end of the second winding of the second coupling inductor, and a cathode. The first regenerative capacitor is electrically connected between the first end of the second winding of the first coupling inductor and the cathode of the first regenerative diode. The first voltage multiplying diode has an anode electrically connected to the cathode of the first regenerative diode, and a cathode. A first voltage doubling capacitor is electrically connected between the first end of the second winding of the second coupling inductor and the cathode of the first voltage doubling diode.
第二再生二極體具有一電連接該第一耦合電感的第三繞組的第一端的陽極,與一陰極。第二再生電容電連接該第二耦合電感的第三繞組的第一端與該第二再生二極體的陰極之間。第二倍壓二極體具有一電連接該第二再生二極體的陰極的陽極,與一陰極。第二倍壓電容電連接該第一耦合電感的第三繞組的第一端與該第二倍壓二極體的陰極之間。The second regenerative diode has an anode electrically connected to the first end of the third winding of the first coupling inductor, and a cathode. The second regenerative capacitor is electrically connected between the first end of the third winding of the second coupling inductor and the cathode of the second regenerative diode. The second voltage doubler diode has an anode electrically connected to the cathode of the second regenerative diode, and a cathode. The second voltage doubling capacitor is electrically connected between the first end of the third winding of the first coupling inductor and the cathode of the second voltage doubling diode.
第一輸出級電連接該共同接點,用以根據來自該第一繞組的放電,產生一呈直流的第一電壓;一第二輸出級,電連接該第一倍壓二極體的陰極與該共同接點之間,用以根據來自該第二繞組與該第一倍壓電容的放電,產生一呈直流的第二電壓。第三輸出級電連接該第二倍壓二極體的陰極,用以根據來自該第三繞組與該第二倍壓電容的放電,產生一呈直流的第三電壓。該第一輸出級還與該第二輸出級與該第三輸出級疊接一起,產生一輸出電壓,該輸出電壓正比於該第一電壓與該第二電壓與該第三電壓的加總。A first output stage is electrically connected to the common contact for generating a first DC voltage based on the discharge from the first winding; a second output stage is electrically connected to the cathode of the first voltage multiplier diode and The common contact is used to generate a second DC voltage based on the discharge from the second winding and the first voltage multiplier capacitor. The third output stage is electrically connected to the cathode of the second voltage multiplier diode, and is used to generate a third voltage in the form of a direct current based on the discharge from the third winding and the second voltage multiplier capacitor. The first output stage is also stacked with the second output stage and the third output stage to generate an output voltage that is proportional to the sum of the first voltage, the second voltage, and the third voltage.
本發明的功效在於:利用二個耦合電感進行電壓倍增,使得電壓增益具有二個設計自由度:耦合電感匝數比和開關導通比,所以高電壓增益的達成,不必操作在極大的導通比。The effect of the present invention is to use two coupled inductors for voltage multiplication, so that the voltage gain has two degrees of design freedom: the coupled inductor turns ratio and the switch conduction ratio. Therefore, it is not necessary to operate at a huge conduction ratio to achieve high voltage gain.
在本發明被詳細描述前,應當注意在以下的說明內容中,類似的元件是以相同的編號來表示。Before the present invention is described in detail, it should be noted that in the following description, similar elements are designated with the same numbering.
參閱圖2為本發明高電壓增益直流轉換器的一實施例,包含一個第一耦合電感1、一個第二耦合電感2、一第一開關S
1、一第二開關S
2、一第一箝位二極體D
1、一第二箝位二極體D
2、第一再生二極體D
11、一第一再生電容C
11、一第一倍壓二極體D
12、一第一倍壓電容C
12、一第二再生二極體D
21、一第二再生電容C
21、一第二倍壓二極體D
22、一第二倍壓電容C
22、一第一輸出級O1、一第二輸出級O2、一第三輸出級O3,與一控制單元4。
Referring to FIG. 2, an embodiment of the high voltage gain DC converter of the present invention includes a
第一耦合電感1具有一第一繞組N
1、一第二繞組N
2及一第三繞組N
3,第二耦合電感2具有一第一繞組P
1、一第二繞組P
2及一第三繞組P
3,每一個繞組N
1~N
3具有一第一端及一第二端,其中,該第一耦合電感1的第一繞組N
1的第一端與該第二耦合電感2的第一繞組P
1的第一端電連接一起以接收一呈直流的輸入電壓,該第一耦合電感1的第二繞組N
2的第二端電連接該第二耦合電感2的第二繞組P
2的第二端,該第一耦合電感1的第三繞組N
3的第二端電連接該第二耦合電感2的第三繞組P
3的第二端。每一第一繞組N
1、P
1的第一端是打點端,每一第一繞組N
1、P
1的第二端是非打點端。每一第二繞組N
2、P
2的第一端是打點端,每一第二繞組N
2、P
2的第二端是非打點端。每一第三繞組N
3、P
3的第一端是打點端,每一第三繞組N
3、P
3的第二端是非打點端。
The first coupled
第一開關S
1具有一電連接於該第一耦合電感1的第一繞組N
1的第二端的第一端,及一接地的第二端,且該第一開關S
1受控制以切換於導通狀態和不導通狀態間,當該第一開關S
1導通時,該第一耦合電感1的第一繞組N
1接收一電流進行充電。第一開關S
1是一N型功率半導體電晶體,且該第一開關S
1的第一端是汲極,該第一開關S
1的第二端是源極。
The first switch S 1 has a first end electrically connected to the second end of the first winding N 1 of the
第二開關S
2具有一電連接於該第二耦合電感2的第一繞組P
1的第二端的第一端,及一接地的第二端,且該第二開關S
2受控制以切換於導通狀態和不導通狀態間;該第二開關S
2是一N型功率半導體電晶體,且該第二開關S
2的第一端是汲極,該第二開關S
2的第二端是源極。
The second switch S 2 has a first end electrically connected to the second end of the first winding P 1 of the
第一箝位二極體D
1具有一電連接於該第一耦合電感1的第一繞組N
1的第二端的陽極,與一陰極。第二箝位二極體D
2具有一電連接於該第二耦合電感2的第一繞組P
1的第二端的陽極,與一陰極,該第一箝位二極體D
1的陰極與該第二箝位二極體D
2的陰極電連接一共同接點。
The first clamping diode D 1 has an anode electrically connected to the second end of the first winding N 1 of the
第一再生二極體D
11具有一電連接該第二耦合電感2的第二繞組P
2的第一端的陽極,與一陰極。第一再生電容C
11電連接該第一耦合電感1的第二繞組N
2的第一端與該第一再生二極體D
11的陰極之間。第一倍壓二極體D
12具有一電連接該第一再生二極體D
11的陰極的陽極,與一陰極。第一倍壓電容C
12電連接該第二耦合電感2的第二繞組P
2的第一端與該第一倍壓二極體D
12的陰極之間。
The first regenerative diode D 11 has an anode electrically connected to the first end of the second winding P 2 of the
第二再生二極體D
21具有一電連接該第一耦合電感1的第三繞組N
3的第一端的陽極,與一陰極。第二再生電容C
21電連接該第二耦合電感2的第三繞組P
3的第一端與該第二再生二極體D
21的陰極之間。第二倍壓二極體D
22具有一電連接該第二再生二極體D
21的陰極的陽極,與一陰極。第二倍壓電容C
22電連接該第一耦合電感1的第三繞組N
3的第一端與該第二倍壓二極體D
22的陰極之間。
The second regenerative diode D 21 has an anode electrically connected to the first end of the third winding N 3 of the
第一輸出級O1電連接該共同接點,用以根據來自該第一繞組N 1、P 1的放電,產生一呈直流的第一電壓。該第一輸出級O1包括一第一輸出電容C o1。第一輸出電容C o1電連接於該共同接點與接地之間,用以提供該第一電壓。 The first output stage O1 is electrically connected to the common contact for generating a first DC voltage based on the discharge from the first windings N 1 and P 1 . The first output stage O1 includes a first output capacitor C o1 . The first output capacitor C o1 is electrically connected between the common node and ground to provide the first voltage.
第二輸出級O2電連接該第一倍壓二極體D 12的陰極與該共同接點之間,用以根據來自該第二繞組N 2、P 2與該第一倍壓電容C 12的放電,產生一呈直流的第二電壓。該第二輸出級O2包括一第一輸出二極體D o1與一第二輸出電容C o2。 The second output stage O2 is electrically connected between the cathode of the first voltage-doubling diode D 12 and the common contact, and is used to generate signals from the second windings N 2 and P 2 and the first voltage-doubling capacitor C 12 The discharge generates a second voltage that is DC. The second output stage O2 includes a first output diode D o1 and a second output capacitor C o2 .
第一輸出二極體D o1具有一電連接該第一倍壓電容C 12的一端的陽極,及一陰極。第二輸出電容C o2電連接於該第一輸出二極體D o1的陰極與該第一輸出電容C o1之間,用以提供該第二電壓。 The first output diode D o1 has an anode electrically connected to one end of the first voltage doubling capacitor C 12 and a cathode. The second output capacitor C o2 is electrically connected between the cathode of the first output diode D o1 and the first output capacitor C o1 for providing the second voltage.
第三輸出級O3電連接該第二倍壓二極體D 22的陰極,用以根據來自該第三繞組N 3、P 3與該第二倍壓電容C 22的放電,產生一呈直流的第三電壓。該第三輸出級O3包括一第二輸出二極體D o2與一第三輸出電容C o3。 The third output stage O3 is electrically connected to the cathode of the second voltage doubling diode D 22 to generate a direct current based on the discharge from the third winding N 3 , P 3 and the second voltage doubling capacitor C 22 the third voltage. The third output stage O3 includes a second output diode D o2 and a third output capacitor C o3 .
第二輸出二極體D o2具有一電連接該第二倍壓電容C 22的一端的陽極,及一陰極。第三輸出電容C o3電連接於該第二輸出二極體D o2的陰極與該第二輸出電容C o2之間,用以提供該第三電壓,其中,該第一輸出電容C o1與該第二輸出電容C o2與該第三輸出電容C o3疊接一起。 The second output diode D o2 has an anode electrically connected to one end of the second voltage doubling capacitor C 22 and a cathode. The third output capacitor C o3 is electrically connected between the cathode of the second output diode D o2 and the second output capacitor C o2 to provide the third voltage, wherein the first output capacitor C o1 and the second output capacitor C o2 The second output capacitor C o2 and the third output capacitor C o3 are stacked together.
該第一輸出級O1還與該第二輸出級O2與該第三輸出級O3疊接一起,產生一輸出電壓V o,該輸出電壓V o正比於該第一電壓與該第二電壓與該第三電壓的加總。 The first output stage O1 is also superimposed with the second output stage O2 and the third output stage O3 to generate an output voltage Vo . The output voltage Vo is proportional to the first voltage, the second voltage and the The sum of the third voltage.
該控制單元4產生一切換該第一開關S
1的第一脈波調變信號及一切換該第二開關S
2的第二脈波調變信號,該第一脈波調變信號與該第二脈波調變信號具有相同的周期時間。該第一及第二脈波調變信號的周期時間的一部份重疊。以下將以十階段進一步說明第一開關S
1、第二開關S
2的切換時序圖。
The
參閱圖3,為本實施例的一等效電路圖,用以說明該二個耦合電感各自的非理想等效電路中的磁化電感L m1、L m2及其漏電感L k1、L k2。其中,參數V in代表輸入電壓,參數V o代表輸出電壓。 Refer to Figure 3, which is an equivalent circuit diagram of this embodiment, illustrating the magnetizing inductors L m1 and L m2 and their leakage inductances L k1 and L k2 in the non-ideal equivalent circuits of the two coupled inductors. Among them, the parameter V in represents the input voltage, and the parameter V o represents the output voltage.
參閱圖4,為本實施例的操作時序圖,其中,參數 v
gs1、v
gs2分別代表控制該第一開關S
1及第二開關S
2是否導通的第一及第二脈波信號的電壓,參數v
ds1、v
ds2分別代表該第一開關S
1及第二開關S
2的二端跨壓,參數T
S為第一脈波信號的週期時間。參數 i
in代表輸入電流。參數i
Lk1、i
Lk2分別代表流經第一耦合電感1的第一繞組N
1與第二耦合電感2的第一繞組P
1的漏電感電流。參數i
D1代表流過第一箝位二極體D
1的電流,參數i
D2代表流過第二箝位二極體D
2的電流,參數i
D11代表流過第一再生二極體D
11的電流,參數i
D21代表流過第二再生二極體D
21的電流,參數i
D12代表流過第一倍壓二極體D
12的電流,參數i
D22代表流過第二倍壓二極體D
22的電流,參數i
Do1代表流過第一輸出二極體D
o1的電流,參數i
Do2代表流過第二輸出二極體D
o2的電流。
Referring to Figure 4, which is an operation timing diagram of this embodiment, in which parameters v gs1 and v gs2 respectively represent the voltages of the first and second pulse signals that control whether the first switch S 1 and the second switch S 2 are turned on. The parameters v ds1 and v ds2 respectively represent the two-terminal cross-voltage of the first switch S 1 and the second switch S 2 , and the parameter TS is the period time of the first pulse signal. The parameter i in represents the input current. The parameters i Lk1 and i Lk2 respectively represent the leakage inductance current flowing through the first winding N 1 of the
以下為本實施例操作於十階段的各電路圖,分別針對每一階段進行說明。The following are circuit diagrams of each of the ten stages of operation in this embodiment, and each stage is described separately.
第一階段(時間:t 0~t 1): The first stage (time: t 0 ~t 1 ):
參閱圖4及圖5,第一階段開始於t=t 0,第一開關S 1切換成導通,且第二開關S 2仍保持導通,由於漏電感L k1的存在,且在時間t 0時的漏電感電流i Lk1是0,因此第一開關S 1具有零電流切換(ZCS)為導通的柔切性能。漏電感電流i Lk1快速上升,當i Lk1<i Lm1時,磁化電感L m1所儲存的能量耦合傳送至第二繞組N 2及第三繞組N 3。第一再生二極體D 11、第一輸出二極體D o1和第二倍壓二極體D 22導通,電流i D11、i Do1和i D22下降,而且漏電感L k1和L k2控制了第一再生二極體D 11、第一輸出二極體D o1和第二倍壓二極體D 22電流的下降速率,因此緩和了這些二極體的反向恢復問題。其餘的二極體,如第一箝制二極體D 1、第二箝制二極體D 2、第一倍壓二極體D 12、第二再生二極體D 21和第二輸出二極體D o2均為逆向偏壓而不導通。 Referring to Figure 4 and Figure 5, the first phase begins at t=t 0. The first switch S 1 is switched on, and the second switch S 2 remains on. Due to the existence of leakage inductance L k1 , and at time t 0 The leakage inductance current i Lk1 is 0, so the first switch S 1 has zero current switching (ZCS) soft-cutting performance of being turned on. The leakage inductor current i Lk1 rises rapidly. When i Lk1 <i Lm1 , the energy stored in the magnetizing inductor L m1 is coupled and transmitted to the second winding N 2 and the third winding N 3 . The first regenerative diode D 11 , the first output diode D o1 and the second voltage doubler diode D 22 are turned on, the currents i D11 , i Do1 and i D22 decrease, and the leakage inductances L k1 and L k2 are controlled The decreasing rate of the current of the first regenerative diode D 11 , the first output diode D o1 and the second voltage doubling diode D 22 thus alleviates the reverse recovery problem of these diodes. The remaining diodes, such as the first clamping diode D 1 , the second clamping diode D 2 , the first voltage doubling diode D 12 , the second regenerative diode D 21 and the second output diode D o2 is reverse biased and does not conduct.
當t=t 1,電流i Lk1上升至滿足i Lk1= i Lm1使得電流i D11、i Do2和i D22下降至0,第一再生二極體D 11、第一輸出二極體D o1和第二倍壓二極體D 22以零電流切換(ZCS)自然轉態成不導通時,本階段結束。 When t=t 1 , the current i Lk1 rises to satisfy i Lk1 = i Lm1 so that the currents i D11 , i Do2 and i D22 drop to 0, the first regenerative diode D 11 , the first output diode D o1 and the This stage ends when the voltage-double diode D 22 naturally transitions to non-conducting state through zero current switching (ZCS).
第二階段( ): The second stage ( ):
參閱圖4及圖6,第二階段開始於t=t 1,第一開關S 1和第二開關S 2皆為導通狀態,所有二極體均為逆向偏壓而不導通。輸入電壓V in跨於磁化電感L m1、L m2與漏電感L k1、L k2,漏電感電流i Lk1和i Lk2呈線性上升,從能量觀點而言,輸入電壓源對二個磁化電感L m1、L m2儲存能量。串聯的第一輸出電容C o1、第二輸出電容C o2、第三輸出電容C o3提供能量至負載。 Referring to Figure 4 and Figure 6, the second stage begins at t=t 1 , the first switch S 1 and the second switch S 2 are both in a conductive state, and all diodes are reverse biased and not conductive. The input voltage V in spans the magnetizing inductors L m1 and L m2 and the leakage inductors L k1 and L k2 . The leakage inductor currents i Lk1 and i Lk2 rise linearly. From an energy point of view, the input voltage source has a positive impact on the two magnetizing inductors L m1 , L m2 stores energy. The first output capacitor C o1 , the second output capacitor C o2 , and the third output capacitor C o3 connected in series provide energy to the load.
第三階段( ): The third stage ( ):
參閱圖4及圖7,第一開關S 1導通,而第二開關S 2切換為不導通,漏電感電流 對第二開關S 2的寄生輸出電容C s2充電,因為寄生電容值很小,所以寄生電容電壓v ds2由0快速上升。當t=t 3,寄生電容電壓上升至第一電壓V Co1時,第二箝制二極體D 2轉態為導通,第三階段結束。 Referring to Figure 4 and Figure 7, the first switch S 1 is turned on, while the second switch S 2 is switched to non-conducting, and the leakage inductor current The parasitic output capacitance C s2 of the second switch S 2 is charged. Because the parasitic capacitance value is very small, the parasitic capacitance voltage v ds2 rises rapidly from 0. When t=t 3 , when the parasitic capacitance voltage rises to the first voltage V Co1 , the second clamping diode D 2 transitions to conduction, and the third stage ends.
第四階段( ): The fourth stage ( ):
參閱圖4及圖8,第四階段開始於t=t3,第二箝制二極體D
2轉態成導通,第二開關S
2的跨壓v
ds2箝位在v
Co1。漏電感的能量傳送到第一輸出電容C
o1,第四階段的漏電感電流i
Lk2下降,磁化電感L
m2的儲能藉由第一繞組P
1傳送至第二繞組P
2及第三繞組P
3。在第二繞組P
2使得二極體D
12轉態為導通,電流i
D12對電容C
12充電,同時對第一再生電容C
11放電。在第三繞組P
3使得第二再生二極體D
21和第二輸出二極體D
o2轉態為導通,電流i
D21對第二再生電容C
21充電,電流i
Do2對第二倍壓電容C
22放電。當漏電感電流i
Lk2下降至0,第二箝制二極體D
2轉態為不導通時,第四階段結束。
Referring to Figure 4 and Figure 8, the fourth stage begins at t=t3, the second clamping diode D2 transitions to conduction, and the cross-voltage vds2 of the second switch S2 is clamped at v Co1 . The energy of the leakage inductor is transferred to the first output capacitor C o1 , the leakage inductor current i Lk2 in the fourth stage decreases, and the stored energy of the magnetizing inductor L m2 is transferred to the second winding P 2 and the third winding P through the first winding
第五階段( ): The fifth stage ( ):
參閱圖4及圖9,第五階段開始於t=t4,此時漏電感L k2的儲能釋放完畢,第二箝位二極體D 2轉態成不導通。磁化電感電流i Lm2完全由由第一繞組P 1反射到第二繞組P 2及第三繞組P 3。第二繞組P 2及第三繞組P 3所組成的電壓倍增模組之電路操作與第四階段相同。本階段流經第一開關S 1的電流等於磁化電感L m1、L m2的電流總和,即 。 Referring to Figure 4 and Figure 9, the fifth stage begins at t=t4. At this time, the energy stored in the leakage inductor L k2 is released, and the second clamping diode D 2 transitions to non-conducting state. The magnetizing inductor current i Lm2 is completely reflected from the first winding P 1 to the second winding P 2 and the third winding P 3 . The circuit operation of the voltage multiplication module composed of the second winding P 2 and the third winding P 3 is the same as that in the fourth stage. The current flowing through the first switch S 1 at this stage is equal to the sum of the currents of the magnetizing inductors L m1 and L m2 , that is, .
第六階段( ): The sixth stage ( ):
參閱圖4及圖10,第六階段開始於t=t 5,第二開關S 2切換成導通,且第一開關S 1仍保持導通,由於漏電感L k2的存在,因此第二開關S 2具有零電流切換(ZCS)為導通的柔切性能。漏電感電流i Lk2快速上升,當i Lk2<i Lm2時時,磁化電感L m2所儲存的能量仍藉由第一繞組P 1傳送到第二繞組P 2及第三繞組P 3。第一倍壓二極體D 12、第二再生二極體D 21和第二輸出二極體D o2導通,電流 i D12、i D21和i DO2下降,而且漏電感L k1和L k2控制控制了第一倍壓二極體D 12、第二再生二極體D 21和第二輸出二極體D o2電流的下降速率,因此緩和了這些二極體的反向恢復問題。其餘的二極體均為逆向偏壓而不導通。當電流i D12、i D21和i Do3下降至0,第一倍壓二極體D 12、第二再生二極體D 21和第二輸出二極體D o2以零電流切換(ZCS)轉態成不導通時,第六階段結束。 Referring to Figure 4 and Figure 10, the sixth stage begins at t=t 5 , the second switch S 2 is switched on, and the first switch S 1 remains on. Due to the existence of the leakage inductance L k2 , the second switch S 2 It has zero current switching (ZCS) soft cutting performance for conduction. The leakage inductor current i Lk2 rises rapidly. When i Lk2 < i Lm2 , the energy stored in the magnetizing inductor L m2 is still transmitted to the second winding P 2 and the third winding P 3 through the first winding P 1 . The first voltage multiplier diode D 12 , the second regenerative diode D 21 and the second output diode D o2 are turned on, the currents i D12 , i D21 and i DO2 decrease, and the leakage inductances L k1 and L k2 are controlled. The decreasing rate of the current of the first voltage multiplier diode D 12 , the second regenerative diode D 21 and the second output diode D o2 is thus alleviated, thereby alleviating the reverse recovery problem of these diodes. The remaining diodes are reverse biased and do not conduct. When the currents i D12 , i D21 and i Do3 drop to 0, the first voltage doubling diode D 12 , the second regenerative diode D 21 and the second output diode D o2 transition to zero current switching (ZCS). When it becomes non-conductive, the sixth stage ends.
第七階段( ): The seventh stage ( ):
參閱圖4及圖11,第七階段開始於t=t
6,開關S
1和S
2皆為導通,所有二極體均為逆向偏壓而不導通。輸入電壓V
in跨於磁化電感L
m1、L
m2與漏電感L
k1、L
k2,漏電感電流i
Lk1和i
Lk2呈線性上升,從能量觀點而言,輸入電壓源對第一耦合電感1的磁化電感L
m1、L
m2儲存能量。第一輸出電容C
o1、第二輸出電容C
o2、第三輸出電容C
o3串聯,提供能量至負載。當第一開關S
1切換為不導通時,第七階段結束。
Referring to Figure 4 and Figure 11, the seventh stage begins at t=t 6 , switches S 1 and S 2 are both turned on, and all diodes are reverse biased and not turned on. The input voltage V in spans the magnetizing inductors L m1 and L m2 and the leakage inductors L k1 and L k2 . The leakage inductor currents i Lk1 and i Lk2 rise linearly. From an energy point of view, the input voltage source has a negative impact on the
第八階段( ): The eighth stage ( ):
參閱圖4及圖12,第八階段開始於t=t 7,第一開關S 1切換為不導通,漏電感電流i Lk1對第一開關S 1的寄生輸出電容C s1充電,因為寄生電容值很小,所以寄生電容電壓v ds1由0快速上升。當寄生電容電壓v ds1上升至第一電壓V Co1時,第一箝制二極體D 1轉態為導通。 Referring to Figure 4 and Figure 12, the eighth stage begins at t=t 7 , the first switch S 1 is switched to non-conducting, and the leakage inductor current i Lk1 charges the parasitic output capacitance C s1 of the first switch S 1 because the parasitic capacitance value It is very small, so the parasitic capacitance voltage v ds1 rises rapidly from 0. When the parasitic capacitance voltage v ds1 rises to the first voltage V Co1 , the first clamping diode D 1 transitions to conduction.
第九階段( ): The ninth stage ( ):
參閱圖4及圖13,第九階段開始於t=t
8,第一箝位二極體D
1轉態成導通,第一開關S
1的跨壓v
ds1箝位在v
Co1。漏電感的能量傳送到輸出側,第九階段漏電感電流i
Lk1下降,磁化電感L
m1的儲能藉由第一繞組N
1傳送到第二繞組N
2及第三繞組N
3。在第二耦合電感2,使得第一再生二極體D
11、第一輸出二極體D
o1轉態為導通,電流i
D11對第一再生電容C
11充電,電流i
Do1對電容C
12放電。在第三耦合電感3,使得二極體D
22轉態為導通,電流i
D22對第二倍壓電容C
22充電,同時對第二再生電容C
21放電。當漏電感電流i
Lk1下降至0,第一箝位二極體D
1轉態為不導通時,第九階段結束。
Referring to Figure 4 and Figure 13, the ninth stage begins at t=t 8 , the first clamping diode D 1 transitions to conduction, and the cross-voltage v ds1 of the first switch S 1 is clamped at v Co1 . The energy of the leakage inductor is transferred to the output side, the leakage inductor current i Lk1 decreases in the ninth stage, and the stored energy of the magnetizing inductor L m1 is transferred to the second winding N 2 and the third winding N 3 through the first winding
第十階段( ): The tenth stage ( ):
參閱圖4及圖13,第九階段開始於t=t 9,此時漏電感的能量釋放完畢,第一箝位二極體D 1轉態成不導通。磁化電感電流i Lm1完全由第一繞組N 1反射到第二繞組N 2及第三繞組N 3。由第二繞組N 2及第三繞組N 3分別組成的電壓倍增模組之電路操作與第九階段相同。此時第二開關S 2的電流等於磁化電感L m1、L m2的電流總和,即 。當第一開關S 1切換為導通時,本階段結束,進入下一個切換週期。 Referring to Figure 4 and Figure 13, the ninth stage begins at t= t9 . At this time, the energy of the leakage inductance is completely released, and the first clamping diode D1 transitions to non-conducting state. The magnetizing inductor current i Lm1 is completely reflected from the first winding N 1 to the second winding N 2 and the third winding N 3 . The circuit operation of the voltage multiplication module composed of the second winding N 2 and the third winding N 3 is the same as that in the ninth stage. At this time, the current of the second switch S 2 is equal to the sum of the currents of the magnetizing inductors L m1 and L m2 , that is, . When the first switch S1 is switched on, this phase ends and the next switching cycle is entered.
<電壓增益分析><Voltage Gain Analysis>
輸出電容C o1的電壓可視為傳統升壓型轉換器的輸出電壓,根據磁化電感L m1滿足伏秒平衡定理(principle of volt-second balance),因此可推導得到輸出電壓V Co1為 The voltage of the output capacitor C o1 can be regarded as the output voltage of a traditional boost converter. According to the magnetizing inductor L m1 , it satisfies the principle of volt-second balance, so the output voltage V Co1 can be deduced as
在第四階段時,耦合電感的磁化電感電壓分別為 ; , In the fourth stage, the magnetizing inductor voltages of the coupled inductor are respectively ; ,
因此,可求得第二再生電容C 21的電壓 。 Therefore, the voltage of the second regenerative capacitor C 21 can be obtained .
另外,在第四階段時,利用克希荷夫電壓定律(KVL)可求得 ; 。 In addition, in the fourth stage, Kirchhoff’s voltage law (KVL) can be used to obtain ; .
在第九階段時,耦合電感的磁化電感電壓分別為In the ninth stage, the magnetizing inductor voltages of the coupled inductor are respectively
; ;
因此,可求得第一再生電容C 11電壓 Therefore, the voltage of the first regenerative capacitor C 11 can be obtained
另外,在第九階段時,由第二繞組N 2及第三繞組N 3分別組成的電壓倍增模組,利用KVL可求得 In addition, in the ninth stage, the voltage doubling module composed of the second winding N 2 and the third winding N 3 can be obtained by using KVL
; ;
可推得電壓增益為The voltage gain that can be estimated is
如圖15所示,不同耦合係數下、電壓增益與導通比之關係曲線,當耦合電感匝數比 ,本轉換器在三種不同之耦合係數 , , 和 情況下,電壓增益及導通比之關係曲線,由圖可知耦合係數對電壓增益影響很小。若忽略耦合電感之漏電感,即 ,轉換器之理想電壓增益M如下: As shown in Figure 15, the relationship curve between voltage gain and conduction ratio under different coupling coefficients. When the coupling inductor turns ratio , this converter has three different coupling coefficients , , and In this case, the relationship curve between voltage gain and conduction ratio shows that the coupling coefficient has little effect on voltage gain. If the leakage inductance of the coupling inductor is ignored, that is , the ideal voltage gain M of the converter is as follows:
(當耦合係數 ) (When the coupling coefficient )
由理想電壓增益M的公式可知本轉換器之電壓增益有兩個設計自由度:耦合電感匝數比 和導通比 。透過調整轉換器之耦合電感匝數比 ,可使得高升壓之達成,轉換器不需操作在極大導通比。 From the formula of ideal voltage gain M, we can know that the voltage gain of this converter has two degrees of design freedom: coupled inductor turns ratio and conduction ratio . By adjusting the coupled inductor turns ratio of the converter , can achieve high voltage boost without the converter needing to operate at a maximum conduction ratio.
如圖16所示,為當耦合係數k=1時,電壓增益與導通比 及耦合電感匝數比 之曲線圖,由圖可知:當 及 時,電壓增益為17.5倍,當 及 時,電壓增益為32.5倍。 As shown in Figure 16, when the coupling coefficient k=1, the voltage gain and conduction ratio and coupled inductor turns ratio From the graph, it can be seen that: when and When , the voltage gain is 17.5 times, when and When , the voltage gain is 32.5 times.
<開關電壓應力分析><Switching voltage stress analysis>
若忽略電容漣波電壓及耦合電感之漏電感(耦合係數 ),開關元件視為理想。由第四階段及第九階段可知,第一開關 和第二開關 之電壓應力分別如下式: If the ripple voltage of the capacitor and the leakage inductance of the coupling inductor (coupling coefficient ), the switching element is considered ideal. It can be seen from the fourth and ninth stages that the first switch and second switch The voltage stresses are as follows:
從第四階段可發現:第一箝位二極體D 1、第一輸出二極體D o1、第一再生二極體D 11、第二倍壓二極體D 22的電壓應力可分別表示如下: , ; ; 。 From the fourth stage, it can be found that the voltage stress of the first clamping diode D 1 , the first output diode D o1 , the first regenerative diode D 11 , and the second voltage doubling diode D 22 can be expressed respectively. as follows: , ; ; .
從第九階段可發現:第二箝位二極體D 2、第一倍壓二極體D 12、第二再生二極體D 21、第二輸出二極體D o2的電壓應力可分別表示如下: ; ; ; 。 From the ninth stage, it can be found that the voltage stress of the second clamping diode D 2 , the first voltage doubling diode D 12 , the second regenerative diode D 21 , and the second output diode D o2 can be expressed respectively. as follows: ; ; ; .
由於傳統交錯式升壓型轉換器之功率開關與二極體的電壓應力均為輸出電壓V o,而由上述公式可知:本實施例的第一開關S 1與第二開關S 2的電壓應力僅為輸出電壓V o的1/(6n+1)倍,因此可使用低額定電壓、具有較低導通電阻的MOSFETs,降低開關導通損失。且本實施例的二極體的電壓應力都遠低於輸出電壓V o,屬於低電壓應力的二極體,可採用順向導通壓降較低的功率二極體,降低導通損失。 Since the voltage stress of the power switch and diode of the traditional interleaved boost converter is the output voltage V o , from the above formula we can know: the voltage stress of the first switch S 1 and the second switch S 2 in this embodiment It is only 1/(6n+1) times of the output voltage Vo , so MOSFETs with low rated voltage and low on-resistance can be used to reduce switching conduction losses. Moreover, the voltage stress of the diodes in this embodiment is much lower than the output voltage V o , and they are diodes with low voltage stress. Power diodes with lower forward conduction voltage drop can be used to reduce conduction losses.
綜上所述,上述實施例,具有以下優點:To sum up, the above embodiments have the following advantages:
一、利用二個耦合電感與倍增電容、倍增二極體所組成電壓倍增模組(其中,第二繞組N 2、P 2與第一倍壓二極體D 12、第一倍壓電容C 12、第一再生二極體D 11組成一個電壓倍增模組。第二繞組N 3、P 3與第二倍壓二極體D 22、第二倍壓電容C 22、第二再生二極體D 21組成另一個電壓倍增模組),使得電壓增益具有二個設計自由度:耦合電感匝數比和開關導通比,所以高電壓增益的達成,不必操作在極大的導通比。二、第一開關S 1與第二開關S 2的低電壓應力(遠低於輸出電壓),可使用導通電阻較小的低額定電壓MOSFETs,降低導通損失。開關能零電流切換(ZCS)導通,降低切換損失。三、二極體的低電壓應力(遠低於輸出電壓),可使用順向導通壓降較小的二極體,降低導通損失。漏電感緩和二極體的反向恢復問題,改善二極體反向恢復損失。四、耦合電感的漏感能量能夠回收,並傳送至輸出側,不但避免產生開關上的電壓突波,也提升效率。五、轉換器的並聯輸入結構,降低元件電流應力,且兩個功率開關(第一開關S 1與第二開關S 2)採用交錯式操作,降低輸入電流漣波。 1. A voltage doubling module composed of two coupling inductors, a doubling capacitor, and a doubling diode (among them, the second winding N 2 and P 2 and the first voltage doubling diode D 12 and the first doubling capacitor C 12. The first regenerative diode D 11 forms a voltage doubling module. The second windings N 3 and P 3 are connected with the second voltage doubling diode D 22 , the second voltage doubling capacitor C 22 and the second regenerative diode The body D 21 forms another voltage multiplication module), so that the voltage gain has two degrees of design freedom: the coupled inductor turns ratio and the switch conduction ratio. Therefore, to achieve high voltage gain, it is not necessary to operate at a huge conduction ratio. 2. Due to the low voltage stress of the first switch S 1 and the second switch S 2 (much lower than the output voltage), low-rated voltage MOSFETs with smaller on-resistance can be used to reduce the conduction loss. The switch can conduct zero current switching (ZCS) to reduce switching losses. 3. Due to the low voltage stress of the diode (much lower than the output voltage), a diode with a smaller forward conduction voltage drop can be used to reduce the conduction loss. Leakage inductance alleviates the reverse recovery problem of the diode and improves the reverse recovery loss of the diode. 4. The leakage inductance energy of the coupling inductor can be recovered and transmitted to the output side, which not only avoids voltage surges on the switch, but also improves efficiency. 5. The parallel input structure of the converter reduces component current stress, and the two power switches (the first switch S 1 and the second switch S 2 ) adopt interleaved operation to reduce the input current ripple.
惟以上所述者,僅為本發明的實施例而已,當不能以此限定本發明實施的範圍,凡是依本發明申請專利範圍及專利說明書內容所作的簡單的等效變化與修飾,皆仍屬本發明專利涵蓋的範圍內。However, the above are only examples of the present invention and should not be used to limit the scope of the present invention. All simple equivalent changes and modifications made based on the patent scope of the present invention and the content of the patent specification are still within the scope of the present invention. within the scope covered by the patent of this invention.
1:第一耦合電感 2:第二耦合電感 N 1、P 1:第一繞組 N 2、P 2:第二繞組 N 3、P 3:第三繞組 S 1:第一開關 S 2:第二開關 D 1:第一箝位二極體 D 2:第二箝位二極體 D 11:第一再生二極體 C 11:第一再生電容 D 12:第一倍壓二極體 C 12:第一倍壓電容 D 21:第二再生二極體 C 21:第二再生電容 D 22:第二倍壓二極體 C 22:第二倍壓電容 O1:第一輸出級 C o1:第一輸出電容 O2:第二輸出級 D o1:第一輸出二極體 C o2:第二輸出電容 O3:第三輸出級 D o2:第二輸出二極體 C o3:第三輸出電容 4:控制單元 V in:輸入電壓 V o:輸出電壓 L m1:磁化電感 L m2:磁化電感 v gs1:第一脈波信號的電壓 v gs2:第二脈波信號的電壓 v ds1:第一開關的二端跨壓 v ds2:第二開關的二端跨壓 i Lk1:漏電感電流 i Lk2:漏電感電流 i D1:流過第一箝位二極體的電流 i D2:流過第二箝位二極體的電流 i Do1:流過第一輸出二極體的電流 i D11:流過第一再生二極體的電流 i D21:流過第二再生二極體的電流 i D12:流過第一倍壓二極體的電流 i D22:流過第二倍壓二極體的電流 i Do2:流過第二輸出二極體的電流 1: First coupling inductor 2: Second coupling inductor N 1 , P 1 : First winding N 2 , P 2 : Second winding N 3 , P 3 : Third winding S 1 : First switch S 2 : Second Switch D 1 : first clamping diode D 2 : second clamping diode D 11 : first regeneration diode C 11: first regeneration capacitor D 12 : first voltage doubler diode C 12 : First voltage doubling capacitor D 21 : Second regenerative diode C 21 : Second regenerative capacitor D 22 : Second voltage doubling diode C 22 : Second voltage doubling capacitor O1: First output stage C o1 : First output capacitor O2: Second output stage D o1 : First output diode C o2 : Second output capacitor O3: Third output stage D o2 : Second output diode C o3 : Third output capacitor 4: Control unit V in : input voltage V o : output voltage L m1 : magnetizing inductance L m2 : magnetizing inductance v gs1 : voltage of the first pulse signal v gs2 : voltage of the second pulse signal v ds1 : voltage of the first switch Terminal voltage v ds2 : voltage across the second switch i Lk1 : leakage inductance current i Lk2 : leakage inductance current i D1 : current flowing through the first clamping diode i D2 : flowing through the second clamping diode Current i of the pole body Do1 : Current i flowing through the first output diode D11 : Current i flowing through the first regenerative diode D21 : Current i flowing through the second regenerative diode D12 : Current i flowing through the first regenerative diode Current i of the voltage doubling diode D22 : Current i flowing through the second voltage doubling diode Do2 : Current flowing through the second output diode
本發明的其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中: 圖1是一種習知的升壓轉換器的一電路圖; 圖2是本發明高電壓增益直流轉換器的一實施例的一電路圖; 圖3是該實施例的一等效電路圖; 圖4是該實施例的一操作時序圖; 圖5是該實施例操作於第一階段的一電路圖; 圖6是該實施例操作於第二階段的一電路圖; 圖7是該實施例操作於第三階段的一電路圖; 圖8是該實施例操作於第四階段的一電路圖; 圖9是該實施例操作於第五階段的一電路圖; 圖10是該實施例操作於第六階段的一電路圖; 圖11是該實施例操作於第七階段的一電路圖; 圖12是該實施例操作於第八階段的一電路圖; 圖13是該實施例操作於第九階段的一電路圖; 圖14是該實施例操作於第十階段的一電路圖; 圖15是該實施例的不同耦合係數和電壓增益的一關係曲線圖;及 圖16是該實施例的耦合電感匝數比及導通比的一電壓增益曲線圖。 Other features and effects of the present invention will be clearly presented in the embodiments with reference to the drawings, in which: Figure 1 is a circuit diagram of a conventional boost converter; Figure 2 is a circuit diagram of an embodiment of the high voltage gain DC converter of the present invention; Figure 3 is an equivalent circuit diagram of this embodiment; Figure 4 is an operation timing diagram of this embodiment; Figure 5 is a circuit diagram of the first stage of operation of this embodiment; Figure 6 is a circuit diagram of this embodiment operating in the second stage; Figure 7 is a circuit diagram of this embodiment operating in the third stage; Figure 8 is a circuit diagram of this embodiment operating in the fourth stage; Figure 9 is a circuit diagram of this embodiment operating in the fifth stage; Figure 10 is a circuit diagram of this embodiment operating in the sixth stage; Figure 11 is a circuit diagram of this embodiment operating in the seventh stage; Figure 12 is a circuit diagram of this embodiment operating in the eighth stage; Figure 13 is a circuit diagram of this embodiment operating in the ninth stage; Figure 14 is a circuit diagram of the embodiment operating in the tenth stage; Figure 15 is a graph showing the relationship between different coupling coefficients and voltage gains in this embodiment; and FIG. 16 is a voltage gain curve diagram of the coupled inductor turns ratio and conduction ratio in this embodiment.
1:第一耦合電感 1: First coupling inductor
2:第二耦合電感 2: Second coupling inductor
N1、P1:第一繞組 N 1 , P 1 : first winding
N2、P2:第二繞組 N 2 , P 2 : Second winding
N3、P3:第三繞組 N 3 , P 3 : third winding
S1:第一開關 S 1 : first switch
S2:第二開關 S 2 : Second switch
D1:第一箝位二極體 D 1 : First clamping diode
D2:第二箝位二極體 D 2 : Second clamping diode
D11:第一再生二極體 D 11 : First regenerative diode
C11:第一再生電容 C 11 : First regenerative capacitor
D12:第一倍壓二極體 D 12 : first voltage doubling diode
C12:第一倍壓電容 C 12 : First voltage multiplier capacitor
D21:第二再生二極體 D 21 : Second regenerative diode
C21:第二再生電容 C 21 : Second regenerative capacitor
D22:第二倍壓二極體 D 22 : Second voltage doubling diode
C22:第二倍壓電容 C 22 : Second voltage doubling capacitor
O1:第一輸出級 O1: first output stage
Co1:第一輸出電容 C o1 : first output capacitor
O2:第二輸出級 O2: second output stage
Do1:第一輸出二極體 D o1 : first output diode
Co2:第二輸出電容 C o2 : second output capacitor
O3:第三輸出級 O3: The third output stage
Do2:第二輸出二極體 D o2 : Second output diode
Co3:第三輸出電容 C o3 : The third output capacitor
4:控制單元 4:Control unit
Vin:輸入電壓 V in : input voltage
Vo:輸出電壓 V o :Output voltage
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