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TW202303665A - Charged particle beam writing apparatus and charged particle beam writing method - Google Patents

Charged particle beam writing apparatus and charged particle beam writing method Download PDF

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TW202303665A
TW202303665A TW111111095A TW111111095A TW202303665A TW 202303665 A TW202303665 A TW 202303665A TW 111111095 A TW111111095 A TW 111111095A TW 111111095 A TW111111095 A TW 111111095A TW 202303665 A TW202303665 A TW 202303665A
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charged particle
blanking
control
particle beam
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TW111111095A
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TWI831161B (en
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中山貴仁
森田博文
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日商紐富來科技股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177Multi-beam, e.g. fly's eye, comb probe
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04Means for controlling the discharge
    • H01J2237/043Beam blanking
    • H01J2237/0435Multi-aperture

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)

Abstract

According to one embodiment, a charged particle beam writing apparatus includes, a writing mechanism, a writing control circuit, a deflection operation control circuit configured to generate control data for controlling the blanking of each of the charged particle beams based on the shot data, a storage, a blanking control circuit configured to control the blanking based on the control data, and a detector. The writing control circuit is configured to, when the detector detects the abnormality during the writing, interrupt the writing, and generate interrupt position information at a position where the writing is interrupted based on the shot data which has been stored at the storage and is related to the control data that has not been used for controlling the blanking.

Description

帶電粒子束描繪裝置以及帶電粒子束描繪方法Charged particle beam drawing device and charged particle beam drawing method

本申請案享有以日本專利申請案2021-064193號(申請日:2021年4月5日)為基礎申請案的優先權。本申請案藉由參照該基礎申請案而包含基礎申請案的全部內容。This application enjoys the priority of the basic application based on Japanese Patent Application No. 2021-064193 (filing date: April 5, 2021). This application includes the entire content of the basic application by referring to this basic application.

本發明是有關於一種帶電粒子束描繪裝置以及帶電粒子束描繪方法。The invention relates to a charged particle beam drawing device and a charged particle beam drawing method.

於半導體元件的製造工序中,使用縮小投影曝光裝置(稱為「步進機(stepper)」或「掃描器(scanner)」),將遮罩上所形成的原畫圖案(以下亦表述為「圖案」)曝光至半導體基板(亦稱為「晶圓」)上。例如,遮罩是利用使用了電子束等帶電粒子束的帶電粒子束描繪裝置來製造。In the manufacturing process of semiconductor devices, using a reduced projection exposure device (called "stepper (stepper)" or "scanner (scanner)"), the original picture pattern formed on the mask (hereinafter also expressed as " pattern") onto a semiconductor substrate (also referred to as a "wafer"). For example, the mask is produced by a charged particle beam drawing device using a charged particle beam such as an electron beam.

例如,作為帶電粒子束描繪裝置之一的電子束描繪裝置包括作為射出電子束的射出部的電子槍。於電子槍的陰極與陽極之間,為了使自陰極放出的熱電子加速,施加數十kV以上的比較高的電壓。該經加速的熱電子作為電子束而自電子槍射出。For example, an electron beam drawing device, which is one of charged particle beam drawing devices, includes an electron gun as an emitting unit that emits electron beams. A relatively high voltage of several tens of kV or more is applied between the cathode and the anode of the electron gun in order to accelerate the thermal electrons emitted from the cathode. The accelerated thermal electrons are emitted from the electron gun as electron beams.

自電子槍射出的電子束經由包括多個孔、偏轉器、及透鏡等的電子光學系統而於遮罩上成像,從而於遮罩上描繪所需的圖案。The electron beam emitted from the electron gun is imaged on the mask through an electron optical system including a plurality of holes, deflectors, and lenses, so as to draw a desired pattern on the mask.

電子束描繪裝置之一有多射束描繪裝置。多射束描繪裝置按照使用多個電子束描繪的圖案的每一畫素進行曝光。於使用消隱孔徑陣列的多射束描繪裝置中,例如使自一個電子槍射出的電子束通過具有多個開口的消隱孔徑陣列,藉此形成多射束。多射束藉由與電子束的各個對應的消隱器(blanker)(電極對)而受到消隱控制。One of the electron beam drawing devices is a multi-beam drawing device. The multi-beam drawing device performs exposure per pixel of a pattern drawn using a plurality of electron beams. In a multi-beam drawing device using a blanked aperture array, for example, an electron beam emitted from one electron gun passes through a blanked aperture array having a plurality of openings, thereby forming a multi-beam. Multiple beams are blanked controlled by respective blankers (electrode pairs) corresponding to the electron beams.

於此種多射束描繪裝置中,當於遮罩上描繪圖案時,例如,有使用對一個畫素多次照射電子束的多重描繪的情況。藉由多重描繪,圖案的位置精度的誤差、以及於電子束的偏轉區域的邊界產生的圖案的連接精度的誤差藉由平均化的效果而降低。In such a multi-beam drawing device, when drawing a pattern on a mask, for example, multiple drawing in which one pixel is irradiated with an electron beam multiple times may be used. By multiple drawing, the error of the positional accuracy of the pattern and the error of the connection accuracy of the pattern generated at the boundary of the electron beam deflection area are reduced by the averaging effect.

於電子束描繪裝置中,若於描繪作業中因地震或異常放電等而發生電磁場變動,則會引起描繪異常,有產生圖案形成不良的可能性。因此,在發生了電磁場變動的情況下,需要迅速停止描繪以盡可能地抑制發生遮罩報廢(mask scrap)。In the electron beam drawing apparatus, if the electromagnetic field fluctuates due to earthquakes or abnormal discharges during drawing operations, drawing abnormalities may occur, and pattern formation defects may occur. Therefore, when an electromagnetic field fluctuation occurs, drawing needs to be stopped quickly to suppress mask scrapping as much as possible.

於日本專利申請案公開公報的日本專利特開2013-38397號公報中,揭示了一種電子射線描繪裝置以及電子射線描繪方法,其在接收到地震資訊的情況下,於描繪途中的子區域的描繪完成後使描繪暫時停止,在判斷為能夠再次開始的情況下,再次開始描繪。In Japanese Patent Application Laid-Open No. 2013-38397, which is the Japanese Patent Application Laid-Open Publication, an electron beam drawing device and an electron beam drawing method are disclosed, which, when seismic information is received, draw sub-regions during drawing After completion, the drawing is temporarily stopped, and when it is judged that it can be restarted, the drawing is restarted.

若多射束描繪裝置的多重描繪的多重度變高,則即便於多次電子束的照射中發生了一次電磁場異常,只要對圖案的影響小,亦無遮罩報廢的必要。因此,藉由在檢測到電磁場異常後迅速中斷描繪,可抑制於電磁場異常狀態下執行的擊射數。另外,藉由自中斷位置再次開始描繪,可減少遮罩報廢的發生。If the multiplicity of multiple drawing by the multi-beam drawing device is increased, even if an electromagnetic field anomaly occurs once during multiple electron beam irradiations, the mask does not need to be scrapped as long as the influence on the pattern is small. Therefore, by rapidly suspending drawing after detecting an electromagnetic field abnormality, the number of shots performed in an electromagnetic field abnormal state can be suppressed. In addition, by resuming drawing from the interrupted position, the occurrence of mask scrapping can be reduced.

本實施形態提供一種可抑制發生遮罩報廢的帶電粒子束描繪裝置以及帶電粒子束描繪方法。The present embodiment provides a charged particle beam drawing device and a charged particle beam drawing method capable of suppressing mask scrapping.

根據本發明的態樣,帶電粒子束描繪裝置包括:描繪機構,將多個帶電粒子束一邊分別消隱一邊照射至對象物來描繪圖案;描繪控制部,基於自圖案生成的擊射資料,對描繪機構進行控制;偏轉演算控制電路,基於自描繪控制部傳送的擊射資料生成控制資料,所述控制資料用於對多個帶電粒子束分別進行消隱控制;保存部,保存擊射資料,直至基於擊射資料的描繪完成;消隱控制電路,基於自偏轉演算控制電路傳送的控制資料,對消隱進行控制;以及檢測器,對異常進行檢測。當於描繪過程中檢測器檢測到異常時,偏轉演算控制電路中斷控制資料向消隱控制電路的傳送以中斷描繪,並且將保存部中所保存的且與未傳送至消隱控制電路的控制資料相關的擊射資料傳送至描繪控制部。描繪控制部基於自偏轉演算控制電路傳送的擊射資料,生成已中斷描繪的位置的中斷位置資訊。According to an aspect of the present invention, the charged particle beam drawing device includes: a drawing mechanism for irradiating a plurality of charged particle beams to an object while blanking each to draw a pattern; and a drawing control unit for The drawing mechanism is controlled; the deflection calculation control circuit generates control data based on the shooting data transmitted from the drawing control part, and the control data is used to perform blanking control on a plurality of charged particle beams respectively; the storage part saves the shooting data, Until the drawing based on the shooting data is completed; the blanking control circuit controls the blanking based on the control data transmitted by the self-deflection calculation control circuit; and the detector detects abnormalities. When the detector detects an abnormality during the drawing process, the deflection calculation control circuit interrupts the transmission of the control data to the blanking control circuit to interrupt the drawing, and saves the control data stored in the storage unit and not sent to the blanking control circuit. The relevant shooting data is sent to the drawing control department. The drawing control unit generates interruption position information of a position where drawing is interrupted based on the shooting data transmitted from the deflection calculation control circuit.

根據本發明的態樣,帶電粒子束描繪方法是將多個帶電粒子束一邊分別消隱一邊照射來描繪圖案的描繪方法,且包括:基於圖案生成擊射資料;基於擊射資料生成控制資料,所述控制資料用於將多個帶電粒子束分別消隱;保存生成了控制資料的擊射資料,直至基於擊射資料的描繪完成;以及基於控制資料,對消隱進行控制來進行描繪,當於描繪過程中檢測到異常時,中斷描繪,並且基於所保存的且與未用於消隱控制的控制資料相關的擊射資料,生成已中斷描繪的位置的中斷位置資訊。According to an aspect of the present invention, the charged particle beam drawing method is a drawing method of drawing a pattern by irradiating a plurality of charged particle beams while blanking each, and includes: generating shot data based on the pattern; generating control data based on the shot data, The control data is used to blank a plurality of charged particle beams respectively; save the shot data for which the control data is generated until the drawing based on the shot data is completed; When an abnormality is detected during the drawing process, the drawing is interrupted, and based on the saved shot data related to the control data not used for blanking control, interrupt position information of the position where the drawing has been interrupted is generated.

以下,參照圖式對實施形態進行說明。實施形態例示出用以將發明的技術思想具體化的裝置或方法。圖式為示意性或概念性者,各圖式的尺寸及比率等未必與現實中者相同。本發明的技術思想並非由結構要素的形狀、結構、配置等特別指定。Hereinafter, embodiments will be described with reference to the drawings. The embodiment exemplifies a device or a method for realizing the technical idea of the invention. The drawings are schematic or conceptual, and the dimensions and ratios of the drawings may not be the same as those in reality. The technical idea of the present invention is not particularly specified by the shape, structure, arrangement, etc. of the constituent elements.

1.第一實施形態 對第一實施形態的帶電粒子束描繪裝置進行說明。以下,作為本實施形態的帶電粒子束描繪裝置,列舉照射多射束的電子束描繪裝置為例進行說明。再者,帶電粒子束並不限定於電子束。另外,帶電粒子束可為單射束。 1. First Embodiment The charged particle beam drawing device according to the first embodiment will be described. Hereinafter, as the charged particle beam drawing device according to the present embodiment, an electron beam drawing device which irradiates multiple beams will be taken as an example and described. In addition, the charged particle beam is not limited to the electron beam. Additionally, the charged particle beam may be a single beam.

1.1 結構 首先,使用圖1對電子束描繪裝置1的整體結構進行說明。圖1是表示電子束描繪裝置1的整體結構的一例的概念圖。再者,於圖1的例子中示出塊之間的連接的一部分,但塊之間的連接並不限定於該些連接。 1.1 Structure First, the overall configuration of the electron beam drawing apparatus 1 will be described using FIG. 1 . FIG. 1 is a conceptual diagram showing an example of the overall configuration of an electron beam drawing apparatus 1 . In addition, although some connections between blocks are shown in the example of FIG. 1, the connection between blocks is not limited to these connections.

如圖1所示,電子束描繪裝置1包括描繪機構10以及控制機構20。As shown in FIG. 1 , the electron beam drawing device 1 includes a drawing mechanism 10 and a control mechanism 20 .

描繪機構10包括描繪室101及鏡筒102。The drawing mechanism 10 includes a drawing chamber 101 and a lens barrel 102 .

於描繪室101內設置有載置試樣103的平台104。試樣103例如包括遮罩(空白遮罩(mask blank)、標線片(reticule)等)或半導體基板。平台104能夠沿與平台104(試樣103)的表面平行的X方向、及與平台104的表面平行且與X方向交叉的Y方向移動。A stage 104 on which a sample 103 is placed is provided in the drawing chamber 101 . The sample 103 includes, for example, a mask (mask blank, reticle, etc.) or a semiconductor substrate. The stage 104 is movable in the X direction parallel to the surface of the stage 104 (sample 103 ), and in the Y direction parallel to the surface of the stage 104 and intersecting the X direction.

平台驅動機構105具有用於使平台104於包括X方向及Y方向的XY平面上移動的驅動機構。再者,平台驅動機構105例如亦可具有以垂直於平台104的表面(XY平面)的Z方向為旋轉軸而使平台104於XY平面上繞旋轉軸旋轉的機構,亦可具有使平台104沿Z方向移動的機構。The stage drive mechanism 105 has a drive mechanism for moving the stage 104 on the XY plane including the X direction and the Y direction. Moreover, the platform driving mechanism 105 may also have a mechanism that makes the platform 104 rotate around the rotation axis on the XY plane with the Z direction perpendicular to the surface (XY plane) of the platform 104 as the rotation axis, or may have a mechanism that makes the platform 104 move along the XY plane. A mechanism that moves in the Z direction.

平台位置探測器408包括雷射測長系統。雷射測長系統對設置於平台104的反射鏡107照射雷射,並接收被反射鏡107反射的雷射。雷射測長系統根據接收到的雷射的資訊來測定平台104於X方向及Y方向上的位置。Platform position detector 408 includes a laser length measurement system. The laser length measurement system irradiates laser light to the reflector 107 provided on the platform 104 and receives the laser reflected by the reflector 107 . The laser length measuring system measures the position of the platform 104 in the X direction and the Y direction according to the received laser information.

法拉第杯(Faraday cup)106設置於平台104上,且用於監視電子束、或者於躲避後述的射束時使用。A Faraday cup (Faraday cup) 106 is installed on the platform 104 and is used for monitoring the electron beam or for avoiding a beam described later.

反射鏡107設置於平台104上,且用於平台104的位置探測。The mirror 107 is disposed on the platform 104 and used for position detection of the platform 104 .

鏡筒102設置於描繪室101上。例如,鏡筒102具有沿Z方向延伸的圓筒形狀。描繪室101及鏡筒102相互接觸的面開口。由描繪室101以及鏡筒102形成的空間被保持為真空(減壓)狀態。例如,鏡筒102由不鏽鋼等導電材料構成,且被接地至接地電位。The lens barrel 102 is installed on the drawing chamber 101 . For example, the lens barrel 102 has a cylindrical shape extending in the Z direction. The surfaces where the drawing chamber 101 and the lens barrel 102 are in contact with each other are open. The space formed by the drawing chamber 101 and the lens barrel 102 is maintained in a vacuum (decompression) state. For example, the lens barrel 102 is made of a conductive material such as stainless steel, and is grounded to a ground potential.

於鏡筒102內設置有電子槍(帶電粒子槍)111、以及構成電子光學系統的照明透鏡112、成形孔徑陣列基板113、消隱孔徑陣列機構114、縮小透鏡115、限制孔徑基板116、物鏡117、成批消隱器118及偏轉器119。再者,電子光學系統的結構並不限定於此種結構。An electron gun (charged particle gun) 111, an illumination lens 112, a shaped aperture array substrate 113, a blanking aperture array mechanism 114, a reducing lens 115, a limiting aperture substrate 116, an objective lens 117, Batch blankers 118 and deflectors 119 . In addition, the structure of the electron optical system is not limited to this structure.

電子槍111被設置成朝向描繪室101射出電子束B。The electron gun 111 is provided to emit an electron beam B toward the drawing chamber 101 .

照明透鏡112藉由使自電子槍111射出的電子束B的軌道相對於成形孔徑陣列基板113大致成為垂直方向(Z方向),來使電子束B將成形孔徑陣列基板113整體照明。再者,照明透鏡112例如可使用電磁透鏡。The illumination lens 112 causes the electron beam B to illuminate the entire aperture shaped array substrate 113 by making the trajectory of the electron beam B emitted from the electron gun 111 substantially perpendicular to the aperture shaped array substrate 113 (Z direction). Furthermore, as the illumination lens 112, for example, an electromagnetic lens can be used.

成形孔徑陣列基板113具有多個開口部。通過開口部後的電子束B被成形為多射束MB。The shaped aperture array substrate 113 has a plurality of openings. The electron beam B passing through the opening is shaped into a multi-beam MB.

圖2中示出成形孔徑陣列基板113的平面圖的一例。如圖2所示,於成形孔徑陣列基板113中,設置有沿著X方向及Y方向配置成矩陣狀的多個開口部130。於圖2的例子中,各開口部130的座標(以下,表述為「孔座標」)自紙面左下朝向紙面右上而以(x,y)=(1,1)~(512,512)表示。再者,開口部130的個數為任意的。另外,開口部130的形狀並無限定。例如,開口部130的形狀可為矩形,亦可為圓形。另外,開口部130的配置能夠任意設計。例如,開口部130可為交錯排列。An example of a plan view of the shaped aperture array substrate 113 is shown in FIG. 2 . As shown in FIG. 2 , a plurality of openings 130 arranged in a matrix along the X direction and the Y direction are provided in the shaped aperture array substrate 113 . In the example of FIG. 2 , the coordinates of the openings 130 (hereinafter referred to as “hole coordinates”) are expressed as (x, y)=(1,1)˜(512,512) from the lower left on the paper to the upper right on the paper. In addition, the number of openings 130 is arbitrary. In addition, the shape of the opening 130 is not limited. For example, the shape of the opening 130 may be rectangular or circular. In addition, the arrangement of the openings 130 can be designed arbitrarily. For example, the openings 130 may be arranged in a staggered manner.

消隱孔徑陣列機構114具有如下機構:該機構用於對通過成形孔徑陣列基板113的各開口部130後的電子束(多射束MB)分別獨立地進行消隱控制。消隱孔徑陣列機構114包括分別與成形孔徑陣列基板113的多個開口部130對應的多個消隱器(電極對)。例如,消隱器的其中一個電極被固定為接地電位。消隱器的另一個電極於接地電位與除此以外的電位之間切換。藉由電位的切換,通過消隱器的電子束受到偏轉控制。藉由消隱孔徑陣列機構114而偏轉的電子束由後述的限制孔徑基板116遮蔽,不會到達試樣103(斷開(off)狀態)。另一方面,未藉由消隱孔徑陣列機構114偏轉的電子束到達試樣103(導通(on)狀態)。The blanking aperture array mechanism 114 has a mechanism for independently performing blanking control on the electron beams (multi-beam MB) passing through the openings 130 of the shaped aperture array substrate 113 . The blanking aperture array mechanism 114 includes a plurality of blankers (pairs of electrodes) respectively corresponding to the plurality of openings 130 of the shaped aperture array substrate 113 . For example, one of the electrodes of the blanker is fixed at ground potential. The other electrode of the blanker is switched between ground potential and other potentials. By switching the potential, the electron beam passing through the blanker is deflection controlled. The electron beams deflected by the blanking aperture array mechanism 114 are shielded by an aperture limiting substrate 116 described later, and do not reach the sample 103 (off state). On the other hand, the electron beams not deflected by the blanking aperture array mechanism 114 reach the sample 103 (on state).

縮小透鏡115使多射束MB朝向限制孔徑基板116的中央所設置的開口部縮小。再者,縮小透鏡115例如可使用電磁透鏡。The reduction lens 115 reduces the multi-beam MB toward an opening provided in the center of the aperture-limiting substrate 116 . Furthermore, as the reducing lens 115, for example, an electromagnetic lens can be used.

成批消隱器118對通過消隱孔徑陣列機構114後的射束進行成批偏轉。The batch blanker 118 deflects the beams passing through the blanking aperture array mechanism 114 in batches.

限制孔徑基板116將藉由成批消隱器118而成批偏轉的多射束MB、及多射束MB中藉由消隱孔徑陣列機構114的消隱控制而偏轉的電子束遮蔽。The aperture limiting substrate 116 shields the multi-beams MB deflected in batches by the batch blanker 118 and the electron beams deflected by the blanking control of the blanking aperture array mechanism 114 among the multi-beam MBs.

物鏡117對通過限制孔徑基板116後的多射束MB的焦點進行調整。調整了焦點的多射束MB於試樣103上形成預先設定的縮小率的圖案像。再者,物鏡117例如可使用電磁透鏡。The objective lens 117 adjusts the focus of the multi-beam MB passing through the aperture-limited substrate 116 . The focus-adjusted multi-beam MB forms a pattern image with a preset reduction ratio on the sample 103 . Furthermore, as the objective lens 117, for example, an electromagnetic lens can be used.

偏轉器119進行偏轉,以使多射束MB照射至平台104(試樣103)的所需位置,從而藉由多射束MB描繪試樣103。The deflector 119 deflects so that the multi-beam MB is irradiated to a desired position of the stage 104 (sample 103 ), so that the sample 103 is drawn by the multi-beam MB.

圖3中示出試樣103的表面上的描繪順序一例的概念圖。如圖3所示,試樣103的描繪區域500例如沿著Y方向而虛擬地分割成預先設定寬度的長條狀的多個條紋區域501~508。於圖3的例子中,分割成8個條紋區域501~508,但要分割的條紋區域的個數能夠任意地設定。而且,平台驅動機構105以分割出的8個條紋區域501~508連續地受到描繪的方式使平台104移動。更具體而言,例如,首先於條紋區域501中,平台驅動機構105使藉由一次擊射所能夠照射的照射區域510自紙面左側朝向右側沿X方向移動。即,平台驅動機構105使平台104自紙面右側朝向左側沿X方向移動。於條紋區域501的描繪結束之後,於條紋區域502中,平台驅動機構105使照射區域510沿與條紋區域501的情況相反的方向移動。接著,於條紋區域503中,平台驅動機構105使照射區域510沿與條紋區域502的情況相反的方向移動。於其他條紋區域504~508中,亦同樣地一邊交替改變照射區域510的移動方向一邊進行描繪。例如,當於條紋區域503的描繪結束之前描繪被中斷時,於條紋區域503內停止描繪。FIG. 3 is a conceptual diagram showing an example of the drawing sequence on the surface of the sample 103 . As shown in FIG. 3 , the drawing area 500 of the sample 103 is virtually divided, for example, along the Y direction into a plurality of elongated striped areas 501 to 508 with preset widths. In the example of FIG. 3 , it is divided into eight stripe regions 501 to 508 , but the number of stripe regions to be divided can be set arbitrarily. Furthermore, the stage driving mechanism 105 moves the stage 104 so that the eight divided stripe regions 501 to 508 are drawn continuously. More specifically, for example, first, in the stripe region 501 , the stage driving mechanism 105 moves the irradiation region 510 that can be irradiated by one shot along the X direction from the left side to the right side of the paper. That is, the stage drive mechanism 105 moves the stage 104 in the X direction from the right side toward the left side of the drawing. After the drawing of the stripe region 501 is completed, in the stripe region 502 , the stage driving mechanism 105 moves the irradiation region 510 in a direction opposite to that of the stripe region 501 . Next, in the stripe region 503 , the stage driving mechanism 105 moves the irradiation region 510 in a direction opposite to that of the stripe region 502 . In the other stripe regions 504 to 508 , drawing is also performed while alternately changing the moving direction of the irradiation region 510 . For example, when the drawing is interrupted before the drawing of the stripe region 503 is completed, the drawing is stopped in the stripe region 503 .

另外,於鏡筒102中,作為檢測器而設置有多個放電檢測器120。放電檢測器120對電子槍111及電子光學系統中產生的異常放電進行檢測。例如,放電檢測器120包括設置於鏡筒102內部的天線電極。例如,放電檢測器120對因天線電極帶電而產生的電流進行檢測。In addition, a plurality of discharge detectors 120 are provided as detectors in the lens barrel 102 . The discharge detector 120 detects abnormal discharge generated in the electron gun 111 and the electron optical system. For example, the discharge detector 120 includes an antenna electrode provided inside the lens barrel 102 . For example, the discharge detector 120 detects a current generated by electrification of the antenna electrodes.

再者,檢測器並不限定於放電檢測器,另外,能夠應用後述的對包含地震在內的磁場變動進行探測的磁場感測器402、或對其他需要中斷處理的異常進行探測者。設置部位亦不限定於鏡筒102,亦可設置於裝置外部。In addition, the detector is not limited to the discharge detector, and the magnetic field sensor 402 which detects a magnetic field fluctuation including an earthquake described later, or a person who detects other abnormalities requiring interrupt processing can be applied. The installation location is not limited to the lens barrel 102, and may also be installed outside the device.

控制機構20包括藉由軟體(由包括電路的電腦執行的程式或韌體等)控制的軟體部30以及藉由硬體(即專用電路)控制的硬體部40。軟體例如藉由電腦所包括的處理器(中央處理單元(central processing unit,CPU))執行韌體來達成其功能。The control mechanism 20 includes a software part 30 controlled by software (a program or firmware executed by a computer including a circuit), and a hardware part 40 controlled by hardware (ie, a dedicated circuit). Software, for example, implements its functions by executing firmware through a processor (central processing unit (CPU)) included in a computer.

於描繪資料儲存部301中保存自外部輸入的描繪資料(佈局資料)。描繪資料儲存部301例如可使用硬碟驅動機(Hard Disk Drive,HDD)或固態驅動機(Solid State Drive,SSD)等儲存介質。Drawing data (layout data) input from outside is stored in the drawing data storage unit 301 . The drawing data storage unit 301 can use, for example, a storage medium such as a hard disk drive (Hard Disk Drive, HDD) or a solid state drive (Solid State Drive, SSD).

擊射資料生成部302基於描繪資料儲存部301中所保存的描繪資料,生成與各擊射對應的擊射資料、及成批消隱器118的控制資料。擊射資料生成部302亦可設置於裝置外部。The shot data generation unit 302 generates shot data corresponding to each shot and control data of the batch blanker 118 based on the drawing data stored in the drawing data storage unit 301 . The shot data generating unit 302 may also be disposed outside the device.

擊射資料中,例如作為消隱孔徑陣列機構114的控制資料而包括多射束MB的各擊射中的照射條件(每一消隱器的電子束的導通/斷開(ON/OFF)及電子束的照射時間)、及描繪位置等資訊。另外,擊射資料生成部302對擊射資料賦予擊射ID,以便可辨識各擊射。In the shot data, for example, as control data of the blanking aperture array mechanism 114, irradiation conditions in each shot of the multi-beam MB (ON/OFF and The irradiation time of the electron beam), and the drawing position and other information. In addition, the shot data generation unit 302 assigns a shot ID to the shot data so that each shot can be identified.

圖4是表示擊射資料的表格的一例。圖4的例子示出根據擊射的順序而依次重覆賦予預先設定的任意編號(例如,00000~99999)的擊射ID的情況(以下,表述為「循環式」)。循環式擊射ID的個數例如可根據擊射資料保存部406中能夠保持的擊射數來設定。若為循環式擊射ID,則可抑制每一擊射中的擊射ID的資料量(位數)的增加。循環式擊射ID的個數可為條紋區域單位,亦可為較條紋區域窄的區域單位。進而,亦可對所有的擊射賦予不同的擊射ID。再者,無需對所有的擊射賦予擊射ID。例如,只要能夠特別指定硬體部40中的未處理資料(描繪未完成而未用於消隱控制的控制資料)的描繪位置即可。FIG. 4 is an example of a table showing shot data. The example in FIG. 4 shows a case in which shot IDs with preset arbitrary numbers (for example, 00000 to 99999) are sequentially and repeatedly assigned in accordance with the order of shots (hereinafter, expressed as “circular type”). The number of circular shot IDs can be set according to the number of shots that can be stored in the shot data storage unit 406, for example. In the case of a cyclic shot ID, it is possible to suppress an increase in the amount of data (number of bits) of the shot ID in each shot. The number of cyclic shot IDs may be a stripe area unit, or an area unit narrower than the stripe area. Furthermore, different shot IDs may be assigned to all shots. Furthermore, it is not necessary to assign shot IDs to all shots. For example, it is only necessary to specify the drawing position of unprocessed data (control data not used for blanking control because drawing has not been completed) in the hardware unit 40 .

如圖4所示,表格的各行對應於一次擊射的資訊。孔座標上的各點處的「導通(ON)」或「斷開(OFF)」的指示示出對應的電子束的導通/斷開控制。於擊射資料中,進而亦賦予照射時間的資訊來定義導通狀態的射束的照射時間。再者,亦可藉由設為照射時間0=斷開、照射時間>0=導通而為僅照射時間的資訊。As shown in FIG. 4, each row of the table corresponds to the information of a shot. The indication of "on" or "off" at each point on the hole coordinates shows the on/off control of the corresponding electron beam. In the shot data, information on the irradiation time is also provided to define the irradiation time of the beam in the on state. Furthermore, the information of only the irradiation time can also be set by setting the irradiation time as 0=off, and the irradiation time>0=on.

描繪控制部303對電子束描繪裝置1進行控制。描繪控制部303具有中斷位置資訊儲存部304。The drawing control unit 303 controls the electron beam drawing device 1 . The rendering control unit 303 has an interrupt position information storage unit 304 .

描繪控制部303保持所生成的擊射資料。描繪控制部303自平台位置探測器408獲取平台104的位置資料,並對平台驅動機構105進行控制。The rendering control unit 303 holds the generated shot data. The drawing control unit 303 acquires the position data of the platform 104 from the platform position detector 408 and controls the platform driving mechanism 105 .

中斷位置資訊儲存部304儲存中斷位置資訊。中斷位置資訊儲存部304例如可使用隨機存取記憶體(Random Access Memory,RAM)。再者,中斷位置資訊儲存部304亦可設置於描繪控制部303的外部。The interrupt location information storage unit 304 stores the interrupt location information. The interrupt location information storage unit 304 can use random access memory (Random Access Memory, RAM), for example. Furthermore, the interrupt position information storage unit 304 may also be disposed outside the rendering control unit 303 .

描繪控制部303可具有用於顯示異常檢測結果的顯示部、或者用於輸出作為日誌(log)而留存的中斷位置座標的輸出部。The drawing control unit 303 may have a display unit for displaying abnormality detection results, or an output unit for outputting interruption position coordinates saved as a log.

描繪控制部303對硬體部40中包括的高壓電源401、磁場感測器402、放電檢測控制電路403、消隱控制電路404、偏轉演算控制電路405及平台位置探測器408進行控制。The drawing control unit 303 controls the high voltage power supply 401 , the magnetic field sensor 402 , the discharge detection control circuit 403 , the blanking control circuit 404 , the deflection calculation control circuit 405 and the platform position detector 408 included in the hardware unit 40 .

高壓電源401對電子槍111施加用於使電子槍111射出電子束B的高電壓。高壓電源401例如在因異常放電而施加至電子槍111的電壓偏離預先設定的標準的情況下,對偏轉演算控制電路405發送通知異常檢測的警報訊號AL1。The high-voltage power supply 401 applies a high voltage for causing the electron gun 111 to emit electron beams B to the electron gun 111 . For example, when the voltage applied to the electron gun 111 deviates from a preset standard due to abnormal discharge, the high-voltage power supply 401 sends an alarm signal AL1 to notify the abnormality detection to the deflection calculation control circuit 405 .

磁場感測器402對因地震或電子束描繪裝置1內的各種電路中流動的電流而發生的磁場變動進行探測。而且,磁場感測器402例如在磁場的測定結果偏離預先設定的範圍的情況下,對偏轉演算控制電路405發送通知異常檢測的警報訊號AL2。The magnetic field sensor 402 detects changes in the magnetic field caused by earthquakes or currents flowing in various circuits in the electron beam mapping device 1 . Furthermore, the magnetic field sensor 402 transmits an alarm signal AL2 for notifying the abnormality detection to the deflection calculation control circuit 405, for example, when the measurement result of the magnetic field deviates from a preset range.

放電檢測控制電路403對偏轉演算控制電路405發送通知如下情況的警報訊號AL3,即:放電檢測器120檢測到異常放電。The discharge detection control circuit 403 transmits to the deflection calculation control circuit 405 an alarm signal AL3 notifying that the discharge detector 120 has detected abnormal discharge.

消隱控制電路404對消隱孔徑陣列機構114及成批消隱器118進行控制。消隱控制電路404自偏轉演算控制電路405接收控制資料。消隱控制電路404例如亦可包括移位暫存器(shift register)等,從而能夠保持多次擊射量的控制資料。消隱控制電路404進行多射束MB中的各電子束的導通/斷開控制。即,消隱控制電路404對要施加至消隱孔徑陣列機構114的各消隱器的電壓進行控制。再者,消隱控制電路404於各消隱器中對電子束的導通/斷開、與電子束的照射時間進行控制。The blanking control circuit 404 controls the blanking aperture array mechanism 114 and the batch blanker 118 . The blanking control circuit 404 receives control data from the deflection calculation control circuit 405 . The blanking control circuit 404 may also include, for example, a shift register, etc., so as to be able to maintain the control data of multiple shots. The blanking control circuit 404 performs on/off control of each electron beam in the multi-beam MB. That is, the blanking control circuit 404 controls the voltage to be applied to each blanker of the blanking aperture array mechanism 114 . Furthermore, the blanking control circuit 404 controls the on/off of the electron beam and the irradiation time of the electron beam in each blanker.

偏轉演算控制電路405包括擊射資料保存部406、及偏轉演算輸出部407。擊射資料保存部406保存自描繪控制部303傳送的擊射資料。The deflection calculation control circuit 405 includes a shooting data storage unit 406 and a deflection calculation output unit 407 . The shot data storage unit 406 stores the shot data transmitted from the rendering control unit 303 .

偏轉演算控制電路405是如下的偏轉演算控制部:為了使多射束MB偏轉以追隨平台104的移動並照射至所需位置,基於位置資料來演算多射束MB的偏轉量資料。偏轉演算控制電路405基於偏轉量資料,例如對偏轉器119進行控制。另外,偏轉演算控制電路405將控制資料傳送至消隱控制電路404,以使消隱控制追隨平台104的移動。The deflection calculation control circuit 405 is a deflection calculation control unit that calculates the deflection data of the multi-beam MB based on the position data in order to deflect the multi-beam MB to follow the movement of the stage 104 and irradiate to a desired position. The deflection calculation control circuit 405 controls, for example, the deflector 119 based on the deflection amount data. In addition, the deflection calculation control circuit 405 transmits control data to the blanking control circuit 404 so that the blanking control follows the movement of the platform 104 .

1.2 電子束描繪裝置的動作 接下來,對本實施形態的電子束描繪裝置1的動作進行說明。於本實施形態中,電子束描繪裝置1按照預先描繪的每一試樣,基於其描繪水準選擇三個動作模式中的任一者。而且,當於描繪過程中檢測到異常時,電子束描繪裝置1使描繪中斷之後,執行所選擇的動作模式。例如,選擇待機模式、診斷模式及中止模式此三者中的任一者作為動作模式。 1.2 Operation of Electron Beam Drawing Device Next, the operation of the electron beam drawing apparatus 1 of this embodiment will be described. In the present embodiment, the electron beam drawing device 1 selects any one of three operation modes based on the drawing level for each sample drawn in advance. Furthermore, when an abnormality is detected during drawing, the electron beam drawing apparatus 1 interrupts drawing, and then executes the selected operation mode. For example, any one of the standby mode, the diagnosis mode, and the suspension mode is selected as the operation mode.

待機模式是於中斷描繪之後、異常平息之前使電子束描繪裝置1成為待機狀態,且於異常平息之後再次開始描繪的模式。例如,在待機模式的情況下,於預先設定的期間,使電子束描繪裝置1成為待機狀態。例如,在該期間內異常未平息而超時的情況下,中止描繪。The standby mode is a mode in which the electron beam drawing apparatus 1 is brought into a standby state after the drawing is interrupted and before the abnormality subsides, and drawing is restarted after the abnormality subsides. For example, in the standby mode, the electron beam drawing apparatus 1 is brought into the standby state for a preset period. For example, when the abnormality is not resolved within this period and the timeout occurs, drawing is terminated.

診斷模式是於中斷描繪之後執行故障診斷,且在判斷為電子束描繪裝置1正常的情況下,再次開始描繪的模式。例如,在診斷模式的情況下,若故障診斷的結果為發現故障,則中止描繪。The diagnosis mode is a mode in which failure diagnosis is performed after the drawing is interrupted, and drawing is restarted when it is determined that the electron beam drawing apparatus 1 is normal. For example, in the case of the diagnosis mode, if the result of the fault diagnosis is that a fault is found, drawing is stopped.

中止模式是當於描繪過程中檢測到異常時使描繪中止的模式。The stop mode is a mode for stopping drawing when an abnormality is detected during drawing.

1.2.1 動作的流程 首先,關於動作的流程,使用圖5的表示描繪動作的一例的流程圖進行說明。 1.2.1 Action flow First, the flow of the operation will be described using the flowchart showing an example of the drawing operation shown in FIG. 5 .

如圖5所示,首先,對檢測到異常放電等異常之後的動作模式進行設定(步驟S1)。As shown in FIG. 5 , first, an operation mode after detection of an abnormality such as abnormal discharge is set (step S1 ).

於設定動作模式之後,描繪控制部303執行描繪(步驟S2)。即,對試樣103照射多射束MB來描繪圖案。After setting the operation mode, the drawing control unit 303 executes drawing (step S2 ). That is, the sample 103 is irradiated with the multi-beam MB to draw a pattern.

當於描繪過程中未檢測到異常時(步驟S3_否(No)),於試樣103上描繪所需的圖案之後,描繪結束。When no abnormality is detected during the drawing (step S3_No (No)), drawing ends after drawing a desired pattern on the sample 103 .

當於描繪過程中檢測到異常(步驟S3_是(Yes))時,中斷描繪(步驟S4)。然後,依照所設定的動作模式,再次開始/中止描繪(步驟S5~步驟S9)。When abnormality is detected during drawing (step S3_Yes (Yes)), drawing is interrupted (step S4). Then, drawing is restarted/stopped according to the set operation mode (step S5 to step S9 ).

1.2.2 待機模式設定時的動作 接著,使用圖6對待機模式設定時的描繪動作進行說明。圖6是表示待機模式設定時的描繪動作的一例的流程圖。於以下的說明中,以有關擊射資料的收發的動作為中心進行說明。再者,於圖6的例子中,表示圖5中所說明的動作模式設定後的動作。 1.2.2 Operation when standby mode is set Next, the rendering operation when the standby mode is set will be described using FIG. 6 . FIG. 6 is a flowchart showing an example of a drawing operation when a standby mode is set. In the following description, the operation related to transmission and reception of shot data will be mainly described. In addition, in the example of FIG. 6, the operation|movement after the operation mode demonstrated in FIG. 5 is set is shown.

如圖6所示,首先,於描繪工序中,擊射資料生成部302基於自描繪資料儲存部301傳送的描繪資料生成擊射資料(步驟S10)。此時,對擊射資料賦予與描繪位置建立了關聯的擊射ID。擊射資料生成部302將擊射資料發送至描繪控制部303。As shown in FIG. 6 , first, in the drawing process, the shot data generation unit 302 generates shot data based on the drawing data transmitted from the drawing data storage unit 301 (step S10 ). At this time, the shot ID associated with the drawing position is assigned to the shot data. The shot data generation unit 302 sends the shot data to the drawing control unit 303 .

描繪控制部303將擊射資料傳送至偏轉演算控制電路405(步驟S11)。偏轉演算控制電路405將所傳送的擊射資料保存於擊射資料保存部406。經保存的擊射資料被保留至資料處理完成、即描繪完成為止。The drawing control unit 303 sends the shooting data to the deflection calculation control circuit 405 (step S11 ). The deflection calculation control circuit 405 stores the transmitted shooting data in the shooting data storage unit 406 . Saved shot data is retained until data processing is complete, ie rendering is complete.

接著,偏轉演算控制電路405基於擊射資料保存部406中所保存的擊射資料,生成隨著描繪的進行依次開啟/關閉消隱的控制資料(步驟S12)。然後,偏轉演算控制電路405將控制資料傳送至消隱控制電路404(步驟S13)。再者,控制資料中不包含可特別指定描繪位置的資訊。Next, the deflection calculation control circuit 405 generates control data for sequentially turning on/off blanking as drawing progresses based on the shot data stored in the shot data storage unit 406 (step S12 ). Then, the deflection calculation control circuit 405 sends the control data to the blanking control circuit 404 (step S13 ). Furthermore, the control data does not include information that can specifically designate the drawing position.

消隱控制電路404基於控制資料,對消隱孔徑陣列機構114進行控制。於消隱孔徑陣列機構114中經消隱控制的多射束MB被照射至試樣103(步驟S14)。The blanking control circuit 404 controls the blanking aperture array mechanism 114 based on the control data. The blanking-controlled multi-beam MB in the blanking aperture array mechanism 114 is irradiated to the sample 103 (step S14 ).

於描繪工序中,在未檢測到異常的情況下(步驟S15_否),於試樣103上描繪所需的圖案之後,描繪動作結束。In the drawing step, when no abnormality is detected (step S15_No), the drawing operation ends after drawing a desired pattern on the sample 103 .

當於描繪過程中檢測到異常時(步驟S15_是),偏轉演算控制電路405接收通知異常發生的警報訊號AL1~警報訊號AL3中的至少一個。When an abnormality is detected during the drawing process (step S15_Yes), the deflection calculation control circuit 405 receives at least one of the alarm signals AL1 -alarm signal AL3 notifying the occurrence of the abnormality.

若接收到警報訊號AL1~警報訊號AL3中的至少一個,則偏轉演算控制電路405的偏轉演算輸出部407中斷控制資料向消隱控制電路404的傳送(步驟S16)。消隱控制電路404強制開啟消隱,對多射束MB進行成批偏轉而成為射束斷開狀態,或者對平台驅動機構105進行控制,使平台104移動而使試樣103躲避(步驟S17)。此時,平台驅動機構105亦可移動平台104以使多射束MB照射至法拉第杯106。If at least one of the alarm signals AL1 to AL3 is received, the deflection calculation output unit 407 of the deflection calculation control circuit 405 interrupts the transmission of control data to the blanking control circuit 404 (step S16 ). The blanking control circuit 404 forcibly turns on the blanking, deflects the multi-beam MB in batches to make the beams off, or controls the platform drive mechanism 105 to move the platform 104 to avoid the sample 103 (step S17) . At this time, the platform driving mechanism 105 can also move the platform 104 to irradiate the multi-beam MB to the Faraday cup 106 .

另外,偏轉演算控制電路405將未處理的擊射資料傳送至描繪控制部303(步驟S18)。更具體而言,例如,偏轉演算控制電路405將生成了未傳送至消隱控制電路404的控制資料的擊射資料中,生成若不中斷描繪則接下來會被傳送的控制資料的擊射資料的擊射ID傳送至描繪控制部303。再者,偏轉演算控制電路405亦可將關於異常檢測的資訊發送至描繪控制部303。該情況下,描繪控制部303可顯示結果。In addition, the deflection calculation control circuit 405 transmits unprocessed shot data to the rendering control unit 303 (step S18 ). More specifically, for example, the deflection calculation control circuit 405 generates the shot data of the control data that will be transmitted next unless the drawing is interrupted, among the shot data that has generated the control data that is not transmitted to the blanking control circuit 404. The shot ID is sent to the rendering control unit 303 . Furthermore, the deflection calculation control circuit 405 can also send the information about the abnormality detection to the drawing control unit 303 . In this case, the rendering control unit 303 can display the result.

描繪控制部303根據所傳送的未處理的擊射資料的擊射ID,生成描繪的中斷位置資訊(描繪位置)(步驟S19)。然後,描繪控制部303將所生成的中斷位置資訊保存於中斷位置資訊儲存部304。The drawing control unit 303 generates drawing interruption position information (drawing position) based on the shot ID of the transmitted unprocessed shot data (step S19 ). Then, the rendering control unit 303 stores the generated interrupt position information in the interrupt position information storage unit 304 .

於使描繪工序中斷之後,描繪控制部303將已中斷描繪的描繪位置作為日誌輸出至外部(步驟S20)。再者,描繪控制部303亦可在包括顯示部的情況下於顯示部顯示日誌。After suspending the drawing process, the drawing control unit 303 outputs the drawing position at which drawing was interrupted as a log to the outside (step S20 ). Furthermore, when the rendering control unit 303 includes a display unit, the log may be displayed on the display unit.

藉由在預先設定的時間(待機時間)內不再接收到警報訊號AL1~警報訊號AL3來判斷異常放電是否平息(步驟S21)。Whether the abnormal discharge subsides is determined by not receiving the alarm signals AL1 - AL3 within a preset time (standby time) (step S21 ).

例如,在異常狀態持續且於預先設定的時間內異常未平息的情況下(步驟S21_否),描繪控制部303中止描繪(步驟S22)。描繪控制部303例如可將有關描繪中止的資訊輸出至外部。For example, when the abnormal state continues and the abnormality has not subsided within a preset time (step S21_No), the drawing control unit 303 stops drawing (step S22 ). For example, the drawing control unit 303 can output information about suspension of drawing to the outside.

在異常於預先設定的時間內平息的情況下(步驟S21_是)、或者在未檢測到異常的情況下,偏轉演算控制電路405對描繪控制部303發送通知異常平息的資訊。此時,根據需要重新生成擊射資料。描繪控制部303基於中斷位置資訊對平台驅動機構105進行控制,以使平台104移動至中斷位置(步驟S23)。描繪控制部303返回至步驟S11,再次開始擊射資料向偏轉演算控制電路405的傳送,並再次開始描繪。When the abnormality subsides within a preset time (step S21_YES), or when no abnormality is detected, the deflection calculation control circuit 405 transmits information notifying that the abnormality has subsided to the drawing control unit 303 . At this point, regenerate the shot profile as necessary. The drawing control unit 303 controls the stage drive mechanism 105 based on the interruption position information, so that the stage 104 moves to the interruption position (step S23 ). The drawing control unit 303 returns to step S11, restarts the transmission of the shot data to the deflection calculation control circuit 405, and starts drawing again.

1.2.3 診斷模式設定時的描繪動作 接下來,使用圖7對診斷模式設定時的描繪動作進行說明。圖7是表示診斷模式設定時的描繪動作的一例的流程圖。於以下的說明中,以與圖6不同的方面為中心進行說明。 1.2.3 Drawing operation when diagnosis mode is set Next, the rendering operation at the time of diagnosis mode setting will be described using FIG. 7 . FIG. 7 is a flowchart showing an example of a rendering operation when a diagnosis mode is set. In the following description, the point which differs from FIG. 6 is centered and demonstrated.

如圖7所示,描繪工序及中斷工序(步驟S10~步驟S20)與圖6相同。As shown in FIG. 7 , the drawing step and the interruption step (step S10 to step S20 ) are the same as those in FIG. 6 .

若異常平息,則描繪控制部303執行故障診斷(步驟S30)。When the abnormality subsides, the drawing control unit 303 performs failure diagnosis (step S30 ).

故障診斷的方法可適宜地選擇。例如,硬體部40可包括用於執行電子束描繪裝置1的故障診斷的自診斷電路(未圖示)。自診斷電路於異常平息之後,例如將留存於硬體部40內部的資料暫時刪除而進行重設,以執行故障診斷。描繪控制部303基於自診斷電路所進行的故障診斷的結果,判斷能否再次開始描繪。The method of fault diagnosis can be appropriately selected. For example, the hardware unit 40 may include a self-diagnosis circuit (not shown) for performing failure diagnosis of the electron beam drawing apparatus 1 . After the abnormality subsides, the self-diagnosis circuit, for example, temporarily deletes the data stored in the hardware part 40 and resets it, so as to perform fault diagnosis. The rendering control unit 303 determines whether or not rendering can be restarted based on the result of the failure diagnosis performed by the self-diagnostic circuit.

或者,例如描繪控制部303可使用測試資料執行描繪,並基於其結果進行故障診斷。例如,描繪控制部303包括故障判定部(未圖示)。更具體而言,例如,描繪控制部303對平台驅動機構105進行控制,使平台104移動以使得平台104上的法拉第杯106被配置於描繪位置。然後,描繪控制部303使用測試資料執行描繪,並利用故障判定部對數位資料的輸出與正常時的資料進行比較,藉此進行故障診斷。或者,描繪控制部303亦可藉由如下方式進行故障診斷:利用故障判定部,藉由核對和(checksum)來對數位資料的輸出進行診斷。Alternatively, for example, the drawing control unit 303 may perform drawing using test data, and perform failure diagnosis based on the result. For example, the rendering control unit 303 includes a failure determination unit (not shown). More specifically, for example, the drawing control unit 303 controls the stage driving mechanism 105 to move the stage 104 so that the Faraday cup 106 on the stage 104 is arranged at the drawing position. Then, the drawing control unit 303 executes drawing using the test data, and compares the output of the digital data with the normal data by the failure judging unit, thereby performing failure diagnosis. Alternatively, the rendering control unit 303 may also perform fault diagnosis in the following way: use the fault determination unit to diagnose the output of the digital data by a checksum.

另外,例如,作為故障診斷,亦可進行基於電壓測定的設備診斷。更具體而言,對電子束描繪裝置1內所設置的各種電源(例如透鏡或偏轉器等)及數位類比轉換器(Digital to Analog Converter,DAC)放大器等具有類比輸出的電路的類比輸出電壓進行測定,並對測定值與設定值進行比較。In addition, for example, as fault diagnosis, device diagnosis based on voltage measurement can also be performed. More specifically, the analog output voltages of circuits with analog outputs such as various power sources (such as lenses or deflectors) and digital-to-analog converter (Digital to Analog Converter, DAC) amplifiers installed in the electron beam drawing device 1 are tested. Measure and compare the measured value with the set value.

或者,例如,作為故障診斷,亦可對是否正常地照射了多射束MB進行診斷。更具體而言,例如,描繪控制部303利用多射束MB,在設置於試樣103的表面的對位用標記上進行掃描。此時,可對多射束MB的焦點及描繪位置的偏離、以及於多射束MB內是否產生了電子束未正常照射的缺陷射束等進行確認。即,描繪控制部303對是否已獲得試樣103所要求的描繪精度進行確認。Alternatively, for example, as a fault diagnosis, it is also possible to diagnose whether or not the multi-beam MB was irradiated normally. More specifically, for example, the drawing control unit 303 scans the alignment mark provided on the surface of the sample 103 using the multi-beam MB. At this time, it is possible to check whether the focal point and drawing position of the multi-beam MB deviate, whether or not a defect beam in which the electron beam is not normally irradiated occurs in the multi-beam MB, and the like. That is, the drawing control unit 303 checks whether or not the drawing accuracy required for the sample 103 has been obtained.

於故障診斷中,亦可執行兩個以上的故障診斷。In fault diagnosis, more than two fault diagnoses can also be performed.

在故障診斷的結果判定為存在故障的情況下(步驟S31_是),描繪控制部303中止描繪(步驟S22)。例如,描繪控制部303可將有關描繪中止的資訊輸出至外部。When it is determined as a result of the failure diagnosis that there is a failure (step S31_YES), the drawing control unit 303 stops drawing (step S22 ). For example, the rendering control unit 303 may output information about suspension of rendering to the outside.

在判定為無故障的情況下(步驟S31_No),描繪控制部303基於中斷位置資訊對平台驅動機構105進行控制,以使平台104移動至中斷位置(步驟S23)。描繪控制部303返回至步驟S11,再次開始擊射資料向偏轉演算控制電路405的傳送,並再次開始描繪。When it is determined that there is no failure (step S31_No), the drawing control unit 303 controls the stage drive mechanism 105 based on the interruption position information to move the stage 104 to the interruption position (step S23 ). The drawing control unit 303 returns to step S11, restarts the transmission of the shot data to the deflection calculation control circuit 405, and starts drawing again.

1.2.4 中止模式設定時的描繪動作 接下來,使用圖8對中止模式設定時的描繪動作進行說明。圖8是表示中止模式設定時的描繪動作的一例的流程圖。於以下的說明中,以與圖6不同的方面為中心進行說明。 1.2.4 Drawing operation when suspend mode setting Next, the rendering operation when the pause mode is set will be described with reference to FIG. 8 . FIG. 8 is a flowchart showing an example of the drawing operation when the pause mode is set. In the following description, the point which differs from FIG. 6 is centered and demonstrated.

如圖8所示,描繪工序(步驟S10~步驟S13)與圖6相同。As shown in FIG. 8 , the drawing step (step S10 to step S13 ) is the same as that in FIG. 6 .

在選擇了中止模式的情況下,若探測出異常,則描繪控制部303中止描繪(步驟S21)。此時,根據需要輸出日誌。When the stop mode is selected, if an abnormality is detected, the drawing control unit 303 stops drawing (step S21 ). At this time, log output as necessary.

1.3 本實施形態的效果 根據本實施形態,藉由在檢測到異常後中斷來自偏轉演算控制電路的資料傳送,可迅速地中斷描繪,抑制在異常狀態下執行的擊射數。而且,基於偏轉演算控制電路中自未處理的擊射資料生成的中斷位置資訊,自中斷位置再次開始描繪,藉此可減少遮罩報廢的發生。 1.3 Effects of this embodiment According to this embodiment, by interrupting the data transmission from the deflection calculation control circuit after abnormality is detected, drawing can be interrupted quickly, and the number of shots executed in an abnormal state can be suppressed. Furthermore, drawing is restarted from the interrupted position based on the interrupted position information generated from the unprocessed shot data in the deflection calculation control circuit, thereby reducing the occurrence of mask scrapping.

2.第二實施形態 接下來,對第二實施形態進行說明。於第二實施形態中,對與第一實施形態不同的電子束描繪裝置1的結構進行說明。以下,以與第一實施形態不同的方面為中心進行說明。 2. The second embodiment Next, a second embodiment will be described. In the second embodiment, the structure of the electron beam drawing apparatus 1 different from that of the first embodiment will be described. Hereinafter, the description will focus on points different from the first embodiment.

2.1 電子束描繪裝置的結構 首先,使用圖9對電子束描繪裝置1的結構進行說明。圖9是表示電子束描繪裝置1的結構的一例的概念圖。再者,於圖9的例子中示出塊之間的連接的一部分,但塊之間的連接並不限定於該些連接。 2.1 Structure of electron beam drawing device First, the configuration of the electron beam drawing apparatus 1 will be described using FIG. 9 . FIG. 9 is a conceptual diagram showing an example of the configuration of the electron beam drawing device 1 . In addition, although some connections between blocks are shown in the example of FIG. 9, the connection between blocks is not limited to these connections.

如圖9所示,描繪機構10與軟體部30的結構與第一實施形態相同。As shown in FIG. 9, the structures of the drawing mechanism 10 and the software part 30 are the same as those of the first embodiment.

於本實施形態中,高壓電源401、磁場感測器402、及放電檢測控制電路403對消隱控制電路404分別發送警報訊號AL1~警報訊號AL3。In this embodiment, the high-voltage power supply 401 , the magnetic field sensor 402 , and the discharge detection control circuit 403 respectively send an alarm signal AL1 to an alarm signal AL3 to the blanking control circuit 404 .

其他硬體部40的結構與第一實施形態相同。The structure of other hardware parts 40 is the same as that of the first embodiment.

2.2 描繪動作 接下來,對描繪動作進行說明。描繪動作的流程與第一實施形態相同。 2.2 Depicting actions Next, the rendering operation will be described. The flow of the drawing operation is the same as that of the first embodiment.

以下,使用圖10對設定待機模式的情況進行說明。圖10是表示待機模式設定時的描繪動作的一例的流程圖。Hereinafter, a case where the standby mode is set will be described using FIG. 10 . FIG. 10 is a flowchart showing an example of a drawing operation when the standby mode is set.

如圖10所示,描繪工序的步驟S10~步驟S15的動作與第一實施形態的圖6相同。As shown in FIG. 10, the operations of step S10 to step S15 in the drawing process are the same as those in FIG. 6 of the first embodiment.

若檢測到異常(步驟S15_是),則接收到警報訊號AL1~警報訊號AL3中的至少一個的消隱控制電路404中斷消隱控制(步驟S40),與第一實施形態同樣地,使多射束MB成為斷開狀態、或者使試樣103躲避(步驟S17)。然後,消隱控制電路404將內部所保持的未用於消隱控制的未處理的控制資料傳送至偏轉演算控制電路405(步驟S41)。再者,消隱控制電路404亦可將關於異常檢測的資訊發送至偏轉演算控制電路405。If an abnormality is detected (step S15_Yes), the blanking control circuit 404 that receives at least one of the alarm signal AL1-alarm signal AL3 interrupts the blanking control (step S40). The beam MB is turned off or the sample 103 is avoided (step S17 ). Then, the blanking control circuit 404 transmits the unprocessed control data held internally and not used for blanking control to the deflection calculation control circuit 405 (step S41 ). Furthermore, the blanking control circuit 404 can also send the information about the abnormality detection to the deflection calculation control circuit 405 .

偏轉演算控制電路405將自消隱控制電路404傳送的未處理的控制資料、以及生成未發送至消隱控制電路404的控制資料時所使用的擊射資料中,生成若不中斷描繪則接下來會被傳送至消隱控制電路404的控制資料時所使用的擊射資料的擊射ID傳送至描繪控制部303(步驟S42)。描繪控制部303基於根據所傳送的未處理的控制資料而生成的擊射計數、以及擊射資料的擊射ID,生成中斷位置資訊(步驟S43)。The deflection calculation control circuit 405 uses the unprocessed control data transmitted from the blanking control circuit 404 and the shot data used when generating the control data not sent to the blanking control circuit 404 to generate the following if drawing is not interrupted. The shot ID of the shot data used for the control data to be sent to the blanking control circuit 404 is sent to the rendering control unit 303 (step S42 ). The rendering control unit 303 generates interruption position information based on the shot count generated from the transmitted unprocessed control data and the shot ID of the shot data (step S43 ).

步驟S20~步驟S23的動作與第一實施形態的圖6相同。The operations of step S20 to step S23 are the same as those in Fig. 6 of the first embodiment.

2.3 本實施形態的效果 根據本實施形態,可獲得與第一實施形態相同的效果。進而,由於可中斷來自偏轉演算控制電路405下游側的消隱控制電路404的資料傳送,故可抑制在異常狀態下執行的擊射數,可進一步減少遮罩報廢的發生。 2.3 Effects of this embodiment According to this embodiment, the same effect as that of the first embodiment can be obtained. Furthermore, since the data transmission from the blanking control circuit 404 downstream of the deflection calculation control circuit 405 can be interrupted, the number of shots performed in an abnormal state can be suppressed, and the occurrence of mask scrapping can be further reduced.

3.第三實施形態 接下來,對第三實施形態進行說明。於第三實施形態中,對與第一實施形態及第二實施形態不同的電子束描繪裝置1的結構進行說明。以下,以與第一實施形態及第二實施形態不同的方面為中心進行說明。 3. The third embodiment Next, a third embodiment will be described. In the third embodiment, the structure of the electron beam drawing apparatus 1 that is different from the first embodiment and the second embodiment will be described. Hereinafter, description will focus on points different from the first embodiment and the second embodiment.

3.1 電子束描繪裝置的整體結構 首先,使用圖11對電子束描繪裝置1的整體結構進行說明。圖11是表示電子束描繪裝置1的整體結構的一例的概念圖。 3.1 The overall structure of the electron beam drawing device First, the overall configuration of the electron beam drawing apparatus 1 will be described using FIG. 11 . FIG. 11 is a conceptual diagram showing an example of the overall configuration of the electron beam drawing apparatus 1 .

於本實施形態中,描繪機構10的結構與第一實施形態及第二實施形態相同,但包括利用軟體部30進行偏轉演算控制動作的偏轉演算控制部305來代替第一實施形態及第二實施形態中所說明的偏轉演算控制電路405。In this embodiment, the structure of the drawing mechanism 10 is the same as that of the first embodiment and the second embodiment, but includes a deflection calculation control unit 305 that uses the software unit 30 to perform the deflection calculation control operation instead of the first embodiment and the second embodiment. The deflection calculation control circuit 405 described in the form.

與第二實施形態同樣地,高壓電源401、磁場感測器402、及放電檢測控制電路403對消隱控制電路404分別發送警報訊號AL1~警報訊號AL3。Similar to the second embodiment, the high-voltage power supply 401, the magnetic field sensor 402, and the discharge detection control circuit 403 send the alarm signal AL1 to the alarm signal AL3 to the blanking control circuit 404, respectively.

其他控制機構20的結構與第一實施形態及第二實施形態相同。The structure of other control means 20 is the same as that of the first embodiment and the second embodiment.

3.2 描繪動作 接下來,對描繪動作進行說明。描繪動作的流程與第一實施形態相同。 3.2 Depicting actions Next, the rendering operation will be described. The flow of the drawing operation is the same as that of the first embodiment.

以下,使用圖12對設定待機模式的情況進行說明。圖12是表示待機模式設定時的描繪動作的一例的流程圖。Hereinafter, a case where the standby mode is set will be described using FIG. 12 . FIG. 12 is a flowchart showing an example of a rendering operation when the standby mode is set.

如圖12所示,描繪工序的步驟S10~步驟S15的動作與第一實施形態的圖6相同。As shown in FIG. 12, the operations of step S10 to step S15 in the drawing process are the same as those in FIG. 6 of the first embodiment.

若檢測到異常(步驟S15_是),則接收到警報訊號AL1~警報訊號AL3中的至少一個的消隱控制電路404中斷消隱控制(步驟S40)。然後,消隱控制電路404與第一實施形態同樣地,使多射束MB成為斷開狀態、或者使試樣103躲避(步驟S17)。然後,消隱控制電路404將內部所保持的未用於消隱控制的未處理的控制資料傳送至偏轉演算控制部305(步驟S44)。再者,消隱控制電路404亦可將關於異常檢測的資訊發送至偏轉演算控制部305。If an abnormality is detected (step S15_Yes), the blanking control circuit 404 that receives at least one of the alarm signals AL1 -alarm signal AL3 interrupts the blanking control (step S40 ). Then, the blanking control circuit 404 turns off the multi-beam MB or avoids the sample 103 as in the first embodiment (step S17 ). Then, the blanking control circuit 404 transmits the unprocessed control data held internally that is not used for blanking control to the deflection calculation control unit 305 (step S44 ). Furthermore, the blanking control circuit 404 can also send information about abnormality detection to the deflection calculation control unit 305 .

偏轉演算控制部305將自消隱控制電路404傳送的未處理的控制資料、以及生成控制資料時所未使用的未處理的擊射資料中,生成若不中斷描繪則接下來會被傳送至消隱控制電路404的控制資料時使用的擊射資料的擊射ID傳送至描繪控制部303(步驟S45)。描繪控制部303基於根據所傳送的未處理的控制資料而生成的擊射計數、以及擊射資料的擊射ID,生成中斷位置資訊(步驟S46)。The deflection calculation control unit 305 generates the unprocessed control data transmitted from the blanking control circuit 404 and the unprocessed shot data that was not used when generating the control data, which will be transmitted to the blanking screen next unless drawing is interrupted. The shot ID of the shot data used when controlling the data by the hidden control circuit 404 is sent to the rendering control unit 303 (step S45 ). The rendering control unit 303 generates interruption position information based on the shot count generated from the transmitted unprocessed control data and the shot ID of the shot data (step S46 ).

步驟S20~步驟S23的動作與第一實施形態的圖6相同。The operations of step S20 to step S23 are the same as those in Fig. 6 of the first embodiment.

3.3 本實施形態的效果 根據本實施形態,可獲得與第二實施形態相同的效果。 3.3 Effects of this embodiment According to this embodiment, the same effect as that of the second embodiment can be obtained.

4. 變形例等 於所述實施形態中,對在描繪前設定動作模式的情況進行了說明,但並不限定於此。於放電檢測控制電路403、高壓電源401及磁場感測器402中,亦可將判定水準設定為兩個階段,並根據判定水準設定動作模式。更具體而言,例如,於放電檢測控制電路403中,在電流的測定值為第一階段的判定水準以上且小於第二階段的判定水準的情況下,選擇待機模式(或診斷模式)。另外,在電流的測定值為第二階段的判定水準以上的情況下,選擇中止模式。 4. Modifications, etc. In the above-mentioned embodiment, the case where the operation mode is set before drawing has been described, but the present invention is not limited thereto. In the discharge detection control circuit 403, the high-voltage power supply 401, and the magnetic field sensor 402, the determination level can also be set in two stages, and the operation mode can be set according to the determination level. More specifically, for example, in the discharge detection control circuit 403 , the standby mode (or diagnosis mode) is selected when the current measurement value is greater than or equal to the judgment level of the first stage and smaller than the judgment level of the second stage. In addition, when the measured value of the current is equal to or higher than the determination level of the second step, the stop mode is selected.

再者,本發明並不限定於所述實施形態,於實施階段能夠於不脫離其要旨的範圍內進行各種變形。另外,各實施形態可適宜地組合實施,該情況下可獲得組合的效果。進而,所述實施形態包括各種發明,可藉由自所揭示的多個結構要件選擇的組合選取各種發明。例如,在即便自實施形態所示的全部結構要件刪除若干結構要件而亦可解決課題、獲得效果的情況下,可選取刪除該結構要件後的結構作為發明。In addition, this invention is not limited to the said embodiment, Various deformation|transformation is possible in the range which does not deviate from the summary in an implementation stage. In addition, each embodiment can be implemented in combination suitably, and in this case, the combined effect can be acquired. Furthermore, the above-described embodiments include various inventions, and various inventions can be selected from combinations selected from a plurality of disclosed structural elements. For example, in the case where a problem can be solved and an effect can be obtained even if some structural elements are deleted from all the structural elements shown in the embodiment, the structure from which the structural elements are deleted can be selected as an invention.

1:電子束描繪裝置 10:描繪機構 20:控制機構 30:軟體部 40:硬體部 101:描繪室 102:鏡筒 103:試樣 104:平台 105:平台驅動機構 106:法拉第杯 107:反射鏡 111:電子槍(帶電粒子槍) 112:照明透鏡 113:成形孔徑陣列基板 114:消隱孔徑陣列機構 115:縮小透鏡 116:限制孔徑基板 117:物鏡 118:成批消隱器 119:偏轉器 120:放電檢測器 130:開口部 301:描繪資料儲存部 302:擊射資料生成部 303:描繪控制部 304:中斷位置資訊儲存部 305:偏轉演算控制部 401:高壓電源 402:磁場感測器 403:放電檢測控制電路 404:消隱控制電路 405:偏轉演算控制電路 406:擊射資料保存部 407:偏轉演算輸出部 408:平台位置探測器 500:描繪區域 501~508:條紋區域 510:照射區域 AL1、AL2、AL3:警報訊號 B:電子束 MB:多射束 S1、S2、S3、S4、S5、S6、S7、S8、S9、S10、S11、S12、S13、S14、S15、S16、S17、S18、S19、S20、S21、S22、S23、S30、S31、S40、S41、S42、S43、S44、S45、S46:步驟 X、Y、Z:方向 1: Electron beam drawing device 10: Delineate the Body 20: Control Mechanism 30:Software department 40: Hardware Department 101: Drawing Room 102: lens barrel 103: Sample 104: Platform 105: Platform drive mechanism 106: Faraday Cup 107: Mirror 111: Electron gun (charged particle gun) 112: Lighting lens 113: Shaped Aperture Array Substrate 114: Blanking Aperture Array Mechanism 115: Narrowing lens 116: Restricted Aperture Substrate 117: objective lens 118: Batch blanker 119: deflector 120: discharge detector 130: opening 301: Depict data storage department 302: Shooting data generation department 303:Delineate the control department 304: Interrupt location information storage unit 305: deflection calculation control unit 401: High voltage power supply 402: Magnetic field sensor 403: discharge detection control circuit 404: Blanking control circuit 405: deflection calculation control circuit 406: Shooting data preservation department 407: deflection calculation output unit 408: Platform position detector 500:Delineate the area 501~508: stripe area 510: Irradiated area AL1, AL2, AL3: alarm signal B: electron beam MB: Multibeam S1, S2, S3, S4, S5, S6, S7, S8, S9, S10, S11, S12, S13, S14, S15, S16, S17, S18, S19, S20, S21, S22, S23, S30, S31, S40, S41, S42, S43, S44, S45, S46: steps X, Y, Z: direction

圖1是第一實施形態的帶電粒子束描繪裝置的概念圖。 圖2是第一實施形態的帶電粒子束描繪裝置中的成形孔徑陣列基板的平面圖。 圖3是表示第一實施形態的帶電粒子束描繪裝置中作為描繪對象的試樣的描繪區域的概念圖。 圖4是表示第一實施形態的帶電粒子束描繪裝置中擊射辨識符(identifier,ID)與擊射條件的關係的表格。 圖5是表示第一實施形態的帶電粒子束描繪裝置中的描繪動作的流程的流程圖。 圖6是表示在第一實施形態的帶電粒子束描繪裝置中設定了待機模式時描繪動作的流程的流程圖。 圖7是表示在第一實施形態的帶電粒子束描繪裝置中設定了診斷模式時描繪動作的流程的流程圖。 圖8是表示在第一實施形態的帶電粒子束描繪裝置中設定了中止模式時描繪動作的流程的流程圖。 圖9是第二實施形態的帶電粒子束描繪裝置的概念圖。 圖10是表示在第二實施形態的帶電粒子束描繪裝置中設定了待機模式時描繪動作的流程的流程圖。 圖11是第三實施形態的帶電粒子束描繪裝置的概念圖。 圖12是表示在第三實施形態的帶電粒子束描繪裝置中設定了待機模式時描繪動作的流程的流程圖。 FIG. 1 is a conceptual diagram of a charged particle beam drawing apparatus according to a first embodiment. Fig. 2 is a plan view of a shaped aperture array substrate in the charged particle beam imaging device according to the first embodiment. 3 is a conceptual diagram showing a drawing area of a sample to be drawn in the charged particle beam drawing apparatus according to the first embodiment. 4 is a table showing the relationship between shot identifiers (identifiers, IDs) and shot conditions in the charged particle beam mapping device according to the first embodiment. 5 is a flowchart showing the flow of a drawing operation in the charged particle beam drawing apparatus according to the first embodiment. 6 is a flowchart showing the flow of the drawing operation when the standby mode is set in the charged particle beam drawing apparatus according to the first embodiment. 7 is a flowchart showing the flow of the drawing operation when the diagnosis mode is set in the charged particle beam drawing apparatus according to the first embodiment. 8 is a flowchart showing the flow of the drawing operation when the pause mode is set in the charged particle beam drawing apparatus according to the first embodiment. Fig. 9 is a conceptual diagram of a charged particle beam drawing device according to a second embodiment. 10 is a flowchart showing the flow of the drawing operation when the standby mode is set in the charged particle beam drawing apparatus according to the second embodiment. Fig. 11 is a conceptual diagram of a charged particle beam drawing device according to a third embodiment. 12 is a flowchart showing the flow of the drawing operation when the standby mode is set in the charged particle beam drawing apparatus according to the third embodiment.

1:電子束描繪裝置 1: Electron beam drawing device

10:描繪機構 10: Delineate the Body

20:控制機構 20: Control Mechanism

30:軟體部 30:Software Department

40:硬體部 40: Hardware Department

101:描繪室 101: Drawing room

102:鏡筒 102: lens barrel

103:試樣 103: Sample

104:平台 104: Platform

105:平台驅動機構 105: Platform drive mechanism

106:法拉第杯 106: Faraday Cup

107:反射鏡 107: Mirror

111:電子槍(帶電粒子槍) 111: Electron gun (charged particle gun)

112:照明透鏡 112: Lighting lens

113:成形孔徑陣列基板 113: Shaped Aperture Array Substrate

114:消隱孔徑陣列機構 114: Blanking Aperture Array Mechanism

115:縮小透鏡 115: Narrowing lens

116:限制孔徑基板 116: Restricted Aperture Substrate

117:物鏡 117: objective lens

118:成批消隱器 118: Batch blanker

119:偏轉器 119: deflector

120:放電檢測器 120: discharge detector

301:描繪資料儲存部 301: Depict data storage department

302:擊射資料生成部 302: Shooting data generation department

303:描繪控制部 303:Delineate the control department

304:中斷位置資訊儲存部 304: Interrupt location information storage unit

401:高壓電源 401: High voltage power supply

402:磁場感測器 402: Magnetic field sensor

403:放電檢測控制電路 403: discharge detection control circuit

404:消隱控制電路 404: Blanking control circuit

405:偏轉演算控制電路 405: deflection calculation control circuit

406:擊射資料保存部 406: Shooting data preservation department

407:偏轉演算輸出部 407: deflection calculation output unit

408:平台位置探測器 408: Platform position detector

AL1、AL2、AL3:警報訊號 AL1, AL2, AL3: alarm signal

B:電子束 B: electron beam

MB:多射束 MB: Multibeam

Claims (13)

一種帶電粒子束描繪裝置,包括: 描繪機構,將多個帶電粒子束一邊分別消隱一邊照射至對象物來描繪圖案; 描繪控制部,基於自所述圖案生成的擊射資料,對所述描繪機構進行控制; 偏轉演算控制電路,基於自所述描繪控制部傳送的所述擊射資料生成控制資料,所述控制資料用於對所述多個帶電粒子束分別進行消隱控制; 保存部,保存所述擊射資料,直至基於所述擊射資料的描繪完成; 消隱控制電路,基於自所述偏轉演算控制電路傳送的所述控制資料,對所述消隱進行控制;以及 檢測器,對異常進行檢測, 當於描繪過程中所述檢測器檢測到所述異常時,所述描繪控制部中斷所述描繪,並基於所述保存部中所保存的且與未用於所述消隱的控制的所述控制資料相關的所述擊射資料,生成已中斷所述描繪的位置的中斷位置資訊。 A charged particle beam mapping device, comprising: The drawing mechanism irradiates a plurality of charged particle beams to the object while blanking each to draw a pattern; a drawing control unit that controls the drawing mechanism based on shot data generated from the pattern; a deflection calculation control circuit for generating control data based on the shot data transmitted from the drawing control unit, and the control data is used to perform blanking control on the plurality of charged particle beams; The storage unit stores the shooting data until the drawing based on the shooting data is completed; a blanking control circuit for controlling the blanking based on the control data transmitted from the deflection calculation control circuit; and Detector, which detects anomalies, When the detector detects the abnormality during drawing, the drawing control section interrupts the drawing, and based on the The shot data related to the control data is used to generate interruption location information of the location where the rendering has been interrupted. 如請求項1所述的帶電粒子束描繪裝置,其中, 於所述異常平息後,所述描繪控制部基於所述中斷位置資訊,再次開始所述描繪。 The charged particle beam drawing device according to claim 1, wherein, After the abnormality subsides, the rendering control unit restarts the rendering based on the interruption position information. 如請求項1所述的帶電粒子束描繪裝置,其中, 若來自所述偏轉演算控制電路的所述控制資料的傳送被中斷,則所述消隱控制電路中斷消隱控制。 The charged particle beam drawing device according to claim 1, wherein, The blanking control circuit interrupts blanking control if the transmission of the control data from the deflection calculation control circuit is interrupted. 如請求項1所述的帶電粒子束描繪裝置,其中, 當於所述描繪過程中所述檢測器檢測到所述異常時,所述消隱控制電路中斷消隱控制以中斷所述描繪,並且進一步將未用於所述消隱控制的所述控制資料傳送至所述描繪控制部, 所述描繪控制部進一步基於未用於所述消隱控制的所述控制資料,生成所述中斷位置資訊。 The charged particle beam drawing device according to claim 1, wherein, When the detector detects the abnormality during the rendering, the blanking control circuit interrupts blanking control to interrupt the rendering, and further stores the control data not used for the blanking control sent to the drawing control unit, The rendering control unit further generates the interrupt position information based on the control data not used for the blanking control. 如請求項1所述的帶電粒子束描繪裝置,其中, 所述描繪控制部基於試樣所要求的描繪精度、待機時間及故障診斷的結果中的至少任意一個,來判斷能否再次開始所述描繪。 The charged particle beam drawing device according to claim 1, wherein, The drawing control unit determines whether or not the drawing can be restarted based on at least one of drawing accuracy required by the sample, a standby time, and a result of failure diagnosis. 如請求項5所述的帶電粒子束描繪裝置,其中, 所述故障診斷包括基於描繪資料的診斷及基於電壓測定的診斷中的至少一個。 The charged particle beam drawing device according to claim 5, wherein, The failure diagnosis includes at least one of diagnosis based on profile data and diagnosis based on voltage measurement. 如請求項1所述的帶電粒子束描繪裝置,其中, 所述保存部保存與所述擊射資料中包含的描繪位置建立了關聯的擊射辨識符。 The charged particle beam drawing device according to claim 1, wherein, The storage unit stores a shot identifier associated with a drawing position included in the shot data. 如請求項1所述的帶電粒子束描繪裝置,其中, 所述描繪控制部包括儲存所述中斷位置資訊的中斷位置資訊儲存部。 The charged particle beam drawing device according to claim 1, wherein, The rendering control unit includes an interruption position information storage unit storing the interruption position information. 一種帶電粒子束描繪方法,是將多個帶電粒子束一邊分別消隱一邊照射來描繪圖案的描繪方法,所述描繪方法包括: 基於所述圖案生成擊射資料; 基於所述擊射資料生成控制資料,所述控制資料用於將所述多個帶電粒子束分別消隱; 保存生成了所述控制資料的所述擊射資料,直至基於所述擊射資料的描繪完成; 基於所述控制資料,對所述消隱進行控制來進行描繪;以及 當於所述描繪過程中檢測到異常時,中斷所述描繪,並且基於所保存的且與未用於所述消隱的控制的所述控制資料相關的所述擊射資料,生成已中斷所述描繪的位置的中斷位置資訊。 A charged particle beam drawing method is a drawing method of drawing a pattern by irradiating a plurality of charged particle beams while blanking, respectively, and the drawing method includes: generating shot data based on the pattern; generating control data based on the shot data, the control data being used to respectively blank the plurality of charged particle beams; saving the shot data from which the control data is generated until the drawing based on the shot data is completed; controlling the blanking for rendering based on the control data; and When an abnormality is detected during the rendering, the rendering is interrupted, and based on the saved shot data related to the control data not used for the blanking control, the interrupted data is generated. Interrupt location information for the depicted location. 如請求項9所述的帶電粒子束描繪方法,更包括:於所述異常平息後,基於所述中斷位置資訊,再次開始所述描繪。The charged particle beam drawing method according to Claim 9 further includes: restarting the drawing based on the interrupted position information after the abnormality subsides. 如請求項9所述的帶電粒子束描繪方法,其中, 中斷所述描繪包括: 中斷所述控制資料的傳送;以及 中斷所述消隱控制。 The charged particle beam drawing method according to claim 9, wherein, Interrupting the depiction includes: interrupt the transmission of the control data; and interrupt the blanking control. 如請求項10所述的帶電粒子束描繪方法,其中, 再次開始所述描繪包括: 基於試樣所要求的描繪精度、待機時間及故障診斷的結果中的至少任意一個,判斷能否再次開始所述描繪。 The charged particle beam drawing method according to claim 10, wherein, Start again with the described profile including: Whether or not the drawing can be restarted is determined based on at least one of the drawing accuracy required for the sample, the standby time, and the result of the fault diagnosis. 如請求項9所述的帶電粒子束描繪方法,其中, 所述保存所述擊射資料包括: 保存與所述擊射資料中包含的描繪位置建立了關聯的擊射辨識符。 The charged particle beam drawing method according to claim 9, wherein, Said saving said shooting data includes: A shot identifier associated with a drawing position included in the shot data is stored.
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