TW202133568A - Radio-frequency front end circuit, device, and system for millimeter waves and terahertz waves - Google Patents

Abstract

A vapor chamber having sealing structure, comprising a body and a capillary wick. The body has a first plate and a second plate. The first and second plates are attached to each other, which collectively define a sealed chamber therein and form a lip side. The lip side has an inlet channel and a stamping seal. The inlet channel is connected to the sealed chamber at one end and is connected to the stamping seal at the other end. The stamping seal is formed in a non-I shape. The capillary wick is selectively disposed within the sealed chamber of the body. Therefore, the air-tightness of the vapor chamber is increased by the stamping seal.

Description

RF front-end circuit, RF front-end device and RF front-end system of millimeter wave and terahertz wave

The present invention relates to a millimeter wave and terahertz wave radio frequency front-end circuit, radio frequency front-end device and radio frequency front-end system, in particular to a millimeter wave and terahertz wave radio frequency front-end circuit that can achieve a drastically reduced power difference when operating in different frequency bands , RF front-end devices and RF front-end systems.

With the development of modern wireless communication technologies (such as radar devices and communication devices), the demand for miniaturization of radio frequency and microwave devices and functional modules has become increasingly urgent. They can be used based on micro-nanoelectronic modules, micro-assembly, and micro-electromechanical systems. The hybrid integration method realizes the overall integration of the terahertz transmitting front-end circuit. The traditional high-frequency millimeter wave and terahertz wave radio frequency transceiver front-end circuit has the problem that the structure is complex and the design is difficult, and because there are two different frequency bands, the high-frequency millimeter wave frequency band and the terahertz wave frequency band, the RF transceiver front-end circuit Separately set up circuits of different frequency bands, for example, two millimeter wave transceiver circuits of different frequency bands and terahertz wave transceiver circuits are arranged in the RF transceiver front-end circuit independently and separately, and the two millimeter wave transceiver circuits of different frequency bands and The terahertz wave transceiver circuits are not electrically connected to each other and there is no matching circuit design, so when the RF transceiver front-end circuit wants to receive or transmit millimeter wave radio frequency signals, it passes through the path of the millimeter wave transceiver circuit and is received by the antenna connected to it. Or send it out. When the radio frequency transceiver front-end circuit wants to receive or transmit the terahertz radio frequency signal, it passes through the path of another independent terahertz wave transceiver circuit and is received or transmitted by the antenna connected to it, thus making the conventional radio frequency transceiver When the front-end circuit operates in different frequency bands, it will cause the problem of great difference in power of the two different frequency bands. For example, the transmission (or reception) of the millimeter wave transceiver circuit in the conventional radio frequency transceiver front-end circuit transmits (or receives) the millimeter wave frequency band (such as 3.5GHz～60GHz) The power difference between the bandwidth power of the center frequency and the bandwidth power of the center frequency of the terahertz wave frequency band (such as 100GHz～200GHz) of the terahertz wave transceiver circuit transmitting (or receiving) will be between 0.5dB～8dB.

An object of the present invention is to provide a millimeter wave and terahertz wave radio frequency front-end circuit that can achieve a significant reduction in power difference when operating in different frequency bands. Another object of the present invention is to provide a radio frequency front-end circuit that can simplify circuit design and reduce cost. Another object of the present invention is to provide a radio frequency front-end device that can achieve a significant reduction in power difference when operating in different frequency bands. Another object of the present invention is to provide a radio frequency front-end device that can simplify circuit design and reduce cost. Another object of the present invention is to provide a radio frequency front-end system that can achieve a significant reduction in power difference when operating in different frequency bands. Another object of the present invention is to provide a radio frequency front-end system that can simplify circuit design and reduce cost. To achieve the above objective, the present invention provides a millimeter wave and terahertz wave radio frequency front-end circuit, which includes a transmitting unit, a receiving unit, and a transceiver switch. The transmitting unit is used to transmit a radio frequency output signal, and the transmitting unit has A plurality of power amplifiers connected in series with each other. The plurality of power amplifiers are provided with a first matching circuit, a second matching circuit, a first load circuit and a first transistor. The first transistor is provided with a first terminal and a first transistor. Two ends and a third end. The first end is electrically connected to the first and second matching circuits. The second and third ends are electrically connected to a ground and the first load circuit, respectively. The receiving unit is used for Receiving a radio frequency input signal, the receiving unit has a plurality of low-noise amplifiers connected in series with each other, and the plurality of low-noise amplifiers are provided with a third matching circuit, a fourth matching circuit, a second load circuit and a second transistor , The second transistor is provided with a first end, a second end and a third end, the first end of the second transistor is electrically connected to the third and fourth matching circuits, the second transistor The second and third terminals are electrically connected to the ground terminal and the second load circuit, respectively, and the transceiver switch is electrically connected to an antenna and between the transmitting unit and the receiving unit to selectively conduct the transmitting unit and the receiving unit. The electrical connection of the antenna or the electrical connection between the receiving unit and the antenna is conducted. The present invention also provides a radio frequency front-end device, including a transceiving processing unit and a plurality of radio frequency front-end circuits. The transceiving processing unit has a complex transceiving processing group and a power divider. The power distributor is electrically connected to one end of the complex transceiving processing group. Connected, each of the transceiver processing groups is provided with a receiving processing part and a transmitting processing part, the receiving processing part has a first variable gain amplifier and a first phase shifter electrically connected to the first variable gain amplifier, The transmission processing part has a second variable gain amplifier and a second phase shifter electrically connected to the second variable gain amplifier, the complex radio frequency front-end circuit is electrically connected to the other end of the complex transceiver processing group, the Each radio frequency front-end circuit includes a transmitting unit, a receiving unit and a transceiving switch. The transmitting unit is electrically connected to the corresponding transmitting processing part for transmitting a radio frequency output signal. The transmitting unit has a plurality of serially connected A power amplifier, the complex power amplifier is provided with a first matching circuit, a second matching circuit, a first load circuit and a first transistor, and the first transistor is provided with a first terminal, a second terminal and a first transistor. Three terminals, the first terminal is electrically connected to the first and second matching circuits, the second and third terminals are respectively electrically connected to a ground terminal and the first load circuit, and the receiving unit is electrically connected to the corresponding receiving circuit. The processing part is used to receive a radio frequency input signal. The receiving unit has a plurality of low noise amplifiers connected in series with each other. The complex low noise amplifiers are provided with a third matching circuit, a fourth matching circuit, a second load circuit and A second transistor, the second transistor is provided with a first end, a second end and a third end, the first end of the second transistor is electrically connected to the third and fourth matching circuits, The second and third terminals of the second transistor are electrically connected to the ground terminal and the second load circuit, respectively, and the transceiver switch is electrically connected to an antenna and the transmitting unit and the receiving unit for selective conduction The electrical connection between the transmitting unit and the antenna or the electrical connection between the receiving unit and the antenna is conducted. The present invention also provides a radio frequency front-end system, including a power divider and a plurality of radio frequency front-end devices as described above, and the plurality of radio frequency front-end devices are electrically connected to the power divider. Therefore, through the design of the present invention in the above embodiments, the power difference can be greatly reduced when operating in different frequency bands, and the circuit design is also effectively simplified and the cost is reduced.

The above-mentioned objects and structural and functional characteristics of the present invention will be described based on the preferred embodiments of the accompanying drawings. The invention provides a millimeter wave and terahertz wave radio frequency front end circuit, radio frequency front end device and radio frequency front end system. Please refer to Figure 1A for a schematic diagram of a switching state of the transceiver switch of the RF front-end circuit of the first embodiment of the present invention; Figure 1B is another of the transceiver switch of the RF front-end circuit of the first embodiment of the present invention Schematic diagram of the switching mode; Fig. 2A is a schematic circuit diagram of the complex power amplifier of the first embodiment of the present invention; Fig. 2B is a schematic circuit diagram of the complex low noise amplifier of the first embodiment of the present invention. The RF front-end circuit 1 is compatible with a millimeter wave and terahertz wave system (not shown in the figure), such as tire pressure detection system, automotive radar detection system, automotive collision avoidance radar system, wireless communication system (such as 5G Or 6G system), medical scanning system or similar. The radio frequency front-end circuit 1 includes a transmitting unit 11, a receiving unit 12, and a transceiving switch 13. The transmitting unit 11 is used to transmit an amplified radio frequency output signal. The transmitting unit 11 has a plurality of power amplifiers 111. The amplifier 111 in this embodiment represents four power amplifiers 111 (Power Amplifier, PA) for amplifying the received radio frequency output signal, and as shown in Figure 1A, from left to right, they are first, second, and third. A total of four power amplifiers 111 are described in series connection of four power amplifiers 111, but it is not limited to this. In specific implementation, the power amplifiers 111 may be more than two or more than four power amplifiers 111. The complex power amplifier 111 is provided with a first matching circuit 112, a second matching circuit 113, a first load circuit 114, a first input terminal 1111, a first output terminal 1112, and a first transistor 115, of which four Power amplifiers 111 are connected in series with each other, and the first output terminal 1112 of the previous power amplifier 111 in each two adjacent power amplifiers 111 is electrically connected to the first input terminal 1111 of the next power amplifier 111, for example, the The first input terminal 1111 of the first power amplifier 11 is used to receive the radio frequency output signal transmitted by a transceiver processing unit (not shown). The first output terminal 1112 of the first power amplifier 111 and the second power amplifier 111 The first input terminal 1111 of the 111 is electrically connected, the first output terminal 1112 of the second power amplifier 111 is electrically connected to the first input terminal 1111 of the third power amplifier 111, and so on. In this embodiment, the first transistor 115 is represented as a field effect transistor (Field Effect Transistor, FET) such as an NMOS transistor, but it is not limited to this. In the specific implementation, any semiconductor with amplifying function The element (such as a PMOS transistor) is the first transistor 115 referred to in the present invention. The first transistor 115 has a first terminal 1151, a second terminal 1152, and a third terminal 1153. The first, second, and third terminals 1151, 1152, and 1153 of the first transistor 115 are sequentially A gate terminal, a source terminal, and a drain terminal. The first terminal 1151 (that is, the gate terminal) is electrically connected to the first and second matching circuits 112 and 113. The second and third terminals 1152 and 1153 (that is, the source The terminal and the drain terminal are respectively electrically connected to a ground terminal Gnd and the first load circuit 114. The first and second matching circuits 112, 113 can only allow signals in a specific frequency band to pass, but block signals outside this frequency band from passing, and the first matching circuit 112 includes a first capacitive component C1 and a first inductive component L1 , One end of the first capacitive element C1 is electrically connected to its own first input terminal 1111, and the other end of the first capacitive element C1 is electrically connected to one end of the first inductive element L1 (that is, the first capacitive element C1 and the second An inductive element L1 is connected in series), the other end of the first inductive element L1 is electrically connected to the first end 1151 (that is, the gate end) of the first transistor 115, and the third end 1153 of the first transistor 115 (Ie, the drain terminal) is electrically connected to the first output terminal 1112 itself. The second matching circuit 113 includes a second capacitive element C2 and a second inductive element L2, one end of the second capacitive element C2, one end of the second inductive element L2, the other end of the first inductive element L1, and the The first end 1151 (that is, the gate terminal) of the first transistor 115 is electrically connected together, and the other end of the second capacitive element C2 is electrically connected to the other end of the second inductive element L2 and the ground terminal Gnd ( That is, the second capacitive component C2 and the second inductive component L2 are connected in parallel). In this embodiment, the number of the first and second capacitive components C1 and C2 and the first and second inductive components is not limited to the above-mentioned one. In specific implementation, the user can select according to the transmission power of the transmitting unit 11 and the required amount. Frequency band and frequency range requirements design, adjust the number of the first and second capacitive components C1, C2 and the first and second inductive components L1, L2, for example, a plurality of first capacitive components C1 (such as two or more first capacitive components C1) and A plurality of first inductive components L1 (such as two or more first inductive components L1) are connected in series, and a plurality of second capacitive components C2 (such as two or more second capacitive components C2) and a plurality of second inductive components L2 (such as two The above second inductance element L2) is connected in parallel. The first load circuit 114 can be a matching circuit or a DC noise isolation circuit, and the first load circuit 114 includes a first resistance element R1 and a first load inductance element L1', both ends of the first resistance element R1 A reference power source Vc (such as 5 volts (V) or 12 volts (V)) is electrically connected to one end of the first load inductance component L1', and the other end of the first load inductance component L1' is connected to the first power supply. The third terminal of the crystal 115 is electrically connected. Therefore, by adjusting the impedance matching values in the first and second matching circuits 112, 113 of the sending unit 11 (such as the capacitance values of the first and second capacitive components C1 and C2 and the inductance values of the first and second inductive components L1, L2) With the design of the impedance matching value (such as the resistance value of the first resistance element R1 and the inductance value of the first load inductance element L1') in the first load circuit 114, different frequency bands (such as millimeter waves) can be output in the same circuit. The frequency band is in the range of 3.5GHz～60GHz or the terahertz frequency band is in the range of 100GHz～200GHz) to effectively output (or send) millimeter wave radio frequency output signals or terahertz wave radio frequency output signals. The receiving unit 12 is used to receive a radio frequency input signal. The receiving unit 12 has a plurality of low noise amplifiers 121. The complex low noise amplifiers 121 represent four low noise amplifiers 121 (LNA) in this embodiment. , Used to amplify the radio frequency input signal received from an antenna 4 and reduce (or suppress) noise processing, and as shown in Figure 1B, from left to right, it is the first, second, third, and four low-noise The signal amplifier 121 has four levels of low noise amplifier 121 connected in series, but it is not limited to this. In specific implementation, the low noise amplifier 121 may be two or more or four power amplifiers 111. The complex low noise amplifier 121 is provided with a third matching circuit 122, a fourth matching circuit 123, a second load circuit 124, a second input terminal 1211, a second output terminal 1212 and a second transistor 125, The plurality of low noise amplifiers 121 are connected in series with each other, and in every two adjacent low noise amplifiers 121, the second input terminal 1211 of the previous low noise amplifier 121 and the second output of the next low noise amplifier 121 The terminal 1212 is electrically connected. For example, the second output terminal 1212 of the first low-noise amplifier 121 transmits the amplified radio frequency input signal to the transceiver processing unit (not shown in the figure), and the first low-noise amplifier 121 The second input terminal 1211 of the amplifier 121 is electrically connected to the second output terminal 1212 of the second low noise amplifier 121, and the second input terminal 1211 of the second low noise amplifier 121 is electrically connected to the third low noise amplifier 121 The second output terminal 1212 is electrically connected, and so on. In this embodiment, the second transistor 125 is represented as a field effect transistor (Field Effect Transistor, FET) such as an NMOS transistor, but it is not limited to this. In specific implementation, any semiconductor with amplifying function The component (such as a PMOS transistor) is the second transistor 125 referred to in the present invention. In one embodiment, the aforementioned first and second transistors 115 and 125 are complementary metal-. Oxide semiconductor (CMOS), silicon germanium (SiGe) transistors, and gallium arsenide (GaAs) transistors. , Gallium nitride (GaN) transistors or bipolar (BJT) transistors. The second transistor 125 has a first terminal 1251, a second terminal 1252, and a third terminal 1253. The first, second, and third terminals 1251, 1252, and 1253 of the second transistor 125 are sequentially described in this embodiment. Is a gate terminal, a source terminal, and a drain terminal. The first terminal 1251 (that is, the gate terminal) of the second transistor 125 is electrically connected to the third and fourth matching circuits 122 and 123. The second transistor The second and third terminals 1252 and 1253 (that is, the source terminal and the drain terminal) of 125 are electrically connected to the ground terminal Gnd and the second load circuit 124, respectively. The third and fourth matching circuits 122, 123 can only allow signals in a specific frequency band to pass, but block signals outside this frequency band from passing, and the third matching circuit 122 includes a third capacitive component C3 and a third inductive component L3 , One end of the third capacitive element C3 is electrically connected to its second input terminal 1211, and the other end of the third capacitive element C3 is electrically connected to one end of the third inductive element L3 (that is, the third capacitive element C3 and the first The three inductance elements L3 are connected in series), the other end of the third inductance element L3 is electrically connected to the first end 1251 (that is, the gate end) of the second transistor 125, and the third end 1253 ( That is, the drain terminal is electrically connected to the second output terminal 1212 of itself. The fourth matching circuit 123 includes a fourth capacitive element C4 and a fourth inductive element L4, one end of the fourth capacitive element C4 and one end of the fourth inductive element L4, the other end of the third inductive element L3, and the first The first ends 1251 of the two transistors 125 are electrically connected together, and the other end of the fourth capacitive element C4 is electrically connected to the other end of the fourth inductive element L4 and the ground terminal Gnd (ie, the fourth capacitive element C4 It is connected in parallel with the fourth inductance element L4). In this embodiment, the number of the third and fourth capacitive components C3, C4 and the third and fourth inductive components L3, L4 is not limited to the above one. In specific implementation, the user can base on the received power and power of the receiving unit 12 The required design of multiple frequency bands and frequency ranges is required to adjust the number of the third and fourth capacitive components C3, C4 and the third and fourth inductive components L3, L4, such as plural third capacitive components C3 (such as two or more third capacitive components) C3) is connected in series with a plurality of third inductive components L3 (such as two or more third inductive components L3), and a plurality of fourth capacitive components C4 (such as two or more fourth capacitive components C4) and a plurality of fourth inductive components L4 ( For example, two or more fourth inductance elements L4) are connected in parallel. The second load circuit 124 can be a matching circuit or a DC noise isolation circuit, and the second load circuit 124 includes a second resistance element R2 and a second load inductance element L2', both ends of the second resistance element R2 The reference power source Vc (such as 5 volts (V) or 12 volts (V)) is electrically connected to one end of the second load inductance component L2', and the other end of the second load inductance component L2' is electrically connected to the second power supply. The third terminal 1253 of the crystal 125 is electrically connected. Therefore, by adjusting the impedance matching values in the third and fourth matching circuits 122 and 123 of the receiving unit 12 (such as the capacitance values of the third and fourth capacitive components C3 and C4 and the inductance values of the third and fourth inductive components L3 and L4) With the design of the impedance matching value (such as the resistance value of the second resistance element R2 and the inductance value of the second load inductance element L2') in the second load circuit 124, different frequency bands (such as millimeter wave) can be received in the same circuit The frequency band is in the range of 3.5GHz～60GHz or the terahertz frequency band is in the range of 100GHz～200GHz), in order to effectively receive millimeter wave radio frequency input signals or terahertz wave radio frequency input signals. In addition, the transceiver switch 13 is a single-pole double-throw radio frequency switch in this embodiment, but it is not limited to this. The transceiver switch 13 is electrically connected between the antenna 4 and the transmitting unit 11 and the receiving unit 12. (That is, the transmitting and receiving switch 13 is located between the receiving unit 12 and the antenna 4 and between the transmitting unit 11 and the antenna 4), the transmitting and receiving switch 13 is used to selectively turn on the transmitting unit 11 and the antenna 4 Electrically connect or conduct the electrical connection between the receiving unit 12 and the antenna 4. The antenna 4 is a Multiple-Input Multiple-Output (MIMO) array antenna. In this embodiment, there are four antennas 4 MIMO array antenna. And the transceiver switch 13 is provided with a first switching terminal 131, a second switching terminal 132, and a connecting terminal 133. The first switching terminal 131 is electrically connected to the last power amplifier 111 (such as the fourth power amplifier 111) of the plurality of power amplifiers 111. The first output terminal 1112 of the power amplifier 111), and the second switching terminal 132 is electrically connected to the second output terminal 132 of the last low noise amplifier 121 (such as the fourth low noise amplifier 121) of the complex low noise amplifier 121 The input terminal 1211 and the connection terminal 133 are electrically connected to the antenna 4. And the transmitting and receiving switch 13 selectively conducts the electrical connection between any one of the first and second switching terminals 131, 132 and the connection terminal 133 by switching to selectively conduct the electrical connection between the transmitting unit 11 and the antenna 4 Connect or conduct the electrical connection between the receiving unit 12 and the antenna 4, for example, when the transmitting unit 11 is to send an amplified radio frequency output signal (such as a millimeter wave radio frequency output signal or a terahertz wave radio frequency output signal), the transceiver switch The switch 13 can be controlled by a control signal transmitted by a signal processing unit (such as a digital signal processor or a baseband chip, not shown in the figure) to electrically connect the first switching terminal 131 and the connection terminal 133, so that the radio frequency output signal The transmitting and receiving switch 13 transmits through the antenna 4; when the receiving unit 12 receives the radio frequency input signal (such as millimeter wave radio frequency input signal or terahertz wave radio frequency input signal) through the antenna 4, the transmitting and receiving switch 13 The second switching terminal 132 can be electrically connected to the connecting terminal 133 under the control of another control signal transmitted by the signal processing unit, so that the antenna 4 transmits the received radio frequency input signal to the receiving/receiving switch 13 through the transceiver switch 13 On the receiving unit 12. Therefore, through the design of the sending unit 11, the receiving unit 12, and the transceiver switch 13 of this creation, it can be used in the millimeter wave frequency band to the terahertz wave frequency band, and when operating in different frequency bands, the power difference can be greatly reduced. Effectively, it also effectively simplifies circuit design and reduces cost. In addition, the radio frequency front-end circuit 1 with the first, second, third, and fourth matching circuits 112, 113, 122, 123 in the present invention enables the transmission (or reception) to be, for example, 3.5 GHz (Hertz), 28 GHz or 60 GHz The bandwidth power and transmission (or reception) of the center frequency of the radio frequency signal (such as millimeter wave radio frequency output signal or millimeter wave radio frequency input signal) are such as 100GHz, 120 GHz, 150 GHz, 180 GHz or 200GHz radio frequency signal (such as Ethernet). The power difference of the bandwidth power of the center frequency of the Hertz wave radio frequency output signal or the terahertz wave radio frequency input signal) will be less than 0.1dB (decibel). Knowing that there is no RF transceiver front-end circuit with a matching circuit, the bandwidth power difference of the present invention can be reduced from the conventional 0.5dB-8dB (decibel) to 0.1dB (or below 0.1dB). Please refer to Fig. 3 for a block diagram of the RF front-end device of the second embodiment of the present invention; Fig. 3A is another block diagram of the RF front-end device of the second embodiment of the present invention; Fig. 3B is a block diagram of the RF front-end device of the second embodiment of the present invention Another block diagram of the radio frequency front-end device of the second embodiment is supplemented by referring to Figures 1A and 1B. As shown in the figure, the radio frequency front device 2 of this embodiment is suitable for the aforementioned millimeter wave and terahertz wave systems (not shown in the figure, such as automobile collision avoidance radar systems, wireless communication systems (such as 5G or 6G systems), The RF front-end device 2 includes a transceiver processing unit 21 and a plurality of RF front-end circuits 1. The plurality of RF front-end circuits 1 are represented as four RF front-end circuits 1 in this embodiment, and the structure of the RF front-end circuit 1 in this embodiment is as follows: The connection relationship and its effect are the same as the structure, connection relationship and effect of the radio frequency front-end circuit 1 of the first embodiment described above, so it will not be repeated here. The transceiver processing unit 21 is electrically connected to the complex radio frequency front-end circuit 1, and the transceiver processing unit 21 has a complex transceiver processing group 211 and a power divider 212. One end and the other end of the complex transceiver processing group 211 are respectively connected to the power The divider 212 is electrically connected to the plurality of radio frequency front-end circuits 1. The power divider 212 in this embodiment is represented as a one-to-four power divider, but it is not limited to this. In a specific implementation, the power divider 212 is also It can be selected as one or more pairs of power dividers, such as one-to-two or one-to-eight. And the power divider 212 is used to combine a plurality of radio frequency signals (such as radio frequency input signals) into a single radio frequency signal, or to distribute a single radio frequency signal (such as radio frequency output signals) into multiple radio frequency signals, for example, refer to Figure 3B. The power divider 212 receives the radio frequency input signal (such as millimeter wave or terahertz wave radio frequency input signal) transmitted by the respective antenna 4 according to the four transceiving processing groups 211 and synthesizes a single radio frequency input signal, and sends it to a signal processing unit 5. Or the power divider 212 distributes a single RF output signal (such as a millimeter wave or terahertz wave RF output signal) transmitted by the signal processing unit 5 into four RF output signals to the corresponding four transceiver processing groups 211. . In addition, the power divider 212 of the present creation may also be referred to as a power divider/combiner (such as a Wilkinson power divider/combiner). The aforementioned signal processing unit 5 is used to perform signal processing, storage or other processing functions for receiving or outputting the radio frequency input signal or radio frequency output signal. The plural sending and receiving processing groups 211 are illustrated as four sending and receiving processing groups 211 in this embodiment, but it is not limited thereto. Each sending and receiving processing group 211 is provided with a receiving processing part 212 and a sending processing part 213, the receiving processing part 212 is electrically connected to the corresponding receiving unit 12, and the sending processing part 213 is electrically connected to the corresponding sending unit 11, such as the The receiving processing part 212 of the first transceiving processing group 211 is electrically connected to the receiving unit 12 of the first radio frequency front-end circuit 1, and the transmitting processing part 213 of the first transceiving processing group 211 is electrically connected to the first radio frequency front end The sending unit 11 of the circuit 1, the remaining second, third, and fourth transceiver processing groups 21 are electrically connected to the corresponding second, third, and fourth RF front-end circuits 1, and so on. And the receiving processing part 212 has a first variable gain amplifier 2121 and a first phase shifter 2122, the first phase shifter 2122 (such as the first phase shifter 2122 of the first transceiver processing group 211) and Correspondingly, one end of the power divider 212 and the first variable gain amplifier 2121 (such as the first variable gain amplifier 2121 of the first transceiver processing group 211) is electrically connected, and the first variable gain amplifier 2121 The other end is electrically connected to the second output end 1212 of the first low noise amplifier 121 of the receiving unit 12 corresponding to a radio frequency front end circuit 1 (such as the first radio frequency front end circuit 1) in the complex radio frequency front end circuit 1, and And the first variable gain amplifier 2121 is used to adjust the gain of the received signal (such as the radio frequency input signal received by the antenna 4), and the first phase shifter 2122 is used to adjust the received signal (such as The radio frequency input signal transmitted by the first variable gain amplifier 2121) undergoes phase adjustment. The transmission processing part 213 has a second variable gain amplifier 2131 and a second phase shifter 2132 electrically connected to the second variable gain amplifier 2131. The second variable gain amplifier 2131 (such as the first transceiver processing The second variable gain amplifier 2131 of the group 211 is electrically connected to one end of the corresponding power divider 212 and the second phase shifter 2132, and the second phase shifter 2132 (such as the first transceiver processing group 211 The other end of the second phase shifter 2132) corresponds to the first power amplifier 111 of the first power amplifier 111 of a radio frequency front-end circuit 1 (such as the first radio frequency front-end circuit 1) in the complex radio frequency front-end circuit 1. The input terminal 1111 is electrically connected, and the second variable gain amplifier 2131 is used to adjust the gain of the received signal (such as the RF output signal transmitted by the power divider 212), and the second phase shifter 2132 is used to The phase of the received signal (such as the radio frequency output signal transmitted by the second variable gain amplifier 2131) is adjusted. Therefore, through the design of the radio frequency front-end device 2 of the present invention, it can be used in the millimeter wave frequency band to the terahertz wave frequency band, and when operating in different frequency bands, the effect of greatly reducing the power difference can be achieved, and the circuit design can be effectively simplified. And the effect of reducing costs. Please refer to FIG. 4 which is a block diagram of the radio frequency front-end system of the third embodiment of the present invention, supplemented by referring to drawings 1A, 1B, and 3A. The present invention also provides a radio frequency front-end system 3. As shown in the figure, the radio frequency front-end system 3 includes a power divider 31 and a plurality of radio frequency front-end devices 2. The power divider 31 is a one-to-many power divider (such as a pair of Six or one-to-eight power splitters), and the power splitter 31 of this embodiment has the same efficacy as the power splitter 212 of the second embodiment described above, and is used to merge a plurality of radio frequency signals (such as radio frequency input signals) A single radio frequency signal, or a single radio frequency signal (such as the radio frequency output signal transmitted by the signal processing unit 5) is divided into multiple radio frequency signals. For example, the power divider 31 transmits according to the multiple radio frequency front-end devices 2 receiving the respective antenna 4 The RF input signal is combined with a single RF input signal and sent to the signal processing unit 5, or the power divider 31 distributes the single RF output signal sent by the signal processing unit 5 into multiple (or multiple) channels The radio frequency output signal is sent to the corresponding complex radio frequency front-end device 2. In addition, in this embodiment, the above-mentioned power divider 31 is also called a power divider/combiner (such as a Wilkinson power divider/combiner. The power divider 31 is electrically connected to the plurality of radio frequency front-end devices 2. Among them, the aforementioned radio frequency front-end device is electrically connected. 2 The above-mentioned radio frequency front-end device 2 of the above-mentioned second embodiment is provided by using the present invention. Therefore, the RF front-end system 3 of the present invention adopts the design of the RF front-end device 2 provided by the present invention to be applied to the aforementioned millimeter wave and terahertz wave system (not shown in the figure), so that the aforementioned millimeter wave and terahertz wave system are not shown. Wave systems (such as automotive radar detection systems or wireless communication systems) can be used in the millimeter wave frequency band to the terahertz wave frequency band, and when operating in different frequency bands, the power difference can be greatly reduced, and it is also effectively simplified Circuit design and cost reduction effect.

1: RF front-end circuit 11: Sending unit 111: power amplifier 1111, 1211: first and second input terminals 1112, 1212: the first and second output terminals 112, 113, 122, 123: first, second, third, fourth matching circuit C1, C2, C3, C4: the first, second, third, fourth capacitive element L1, L2, L3, L4: the first, second, third and fourth inductor 114, 124: first and second load circuits R1, R2: the first and second resistors L1′, L2′: the first and second load inductance components 115, 125: first and second transistors 1151, 1152, 1153, 1251, 1252, 1253: first, second, third end 12: receiving unit 121: Low Noise Amplifier 13: Transceiver switch 131, 132: the first and second switching end 133: connection end 2: RF front-end device 21: Send and receive processing unit 211: Send and receive processing group 212: Receiving and processing part 2121, 2131: the first and second variable gain amplifiers 2122, 2132: the first and second phase shifters 213: Send processing part 212, 31: Power divider 3: RF front-end system 4: antenna 5: Signal processing unit Gnd: ground terminal Vc: Reference power

FIG. 1A is a schematic diagram of a switching state of the transceiver switch of the radio frequency front-end circuit according to the first embodiment of the present invention. FIG. 1B is a schematic diagram of another switching state of the transceiver switch of the radio frequency front-end circuit of the first embodiment of the present invention. FIG. 2A is a circuit diagram of the complex power amplifier of the first embodiment of the present invention. FIG. 2B is a circuit diagram of the complex low noise amplifier of the first embodiment of the present invention. FIG. 3 is a block diagram of the radio frequency front-end device of the second embodiment of the present invention. FIG. 3A is another block diagram of the RF front-end device of the second embodiment of the present invention. FIG. 3B is another block diagram of the RF front-end device of the second embodiment of the present invention. Figure 4 is a block diagram of the RF front-end system of the third embodiment of the present invention.

1: RF front-end circuit

11: Sending unit

111: power amplifier

1111, 1211: first and second input terminals

1112, 1212: the first and second output terminals

12: receiving unit

121: Low Noise Amplifier

13: Transceiver switch

131, 132: the first and second switching end

133: connection end

4: antenna

Claims (19)

A radio frequency front-end circuit of millimeter wave and terahertz wave, including: A transmitting unit for transmitting a radio frequency output signal. The transmitting unit has a plurality of power amplifiers connected in series with each other. The plurality of power amplifiers are provided with a first matching circuit, a second matching circuit, a first load circuit and a first Transistor, the first transistor is provided with a first end, a second end, and a third end. The first end is electrically connected to the first and second matching circuits, and the second and third ends are electrically connected to each other. Connect a ground terminal and the first load circuit; A receiving unit for receiving a radio frequency input signal. The receiving unit has a plurality of low-noise amplifiers connected in series with each other, and the plurality of low-noise amplifiers are provided with a third matching circuit, a fourth matching circuit, and a second load circuit And a second transistor, the second transistor is provided with a first end, a second end, and a third end, and the first end of the second transistor is electrically connected to the third and fourth matching circuits , The second and third terminals of the second transistor are electrically connected to the ground terminal and the second load circuit, respectively; and A transmit-receive switch is electrically connected between an antenna and the transmitting unit and the receiving unit, and is used to select the electrical connection between the transmitting unit and the antenna or the electrical connection between the receiving unit and the antenna. The millimeter wave and terahertz wave radio frequency front-end circuit according to claim 1, wherein the complex power amplifier is provided with a first input terminal and a first output terminal, and the first power amplifier in each of the two adjacent power amplifiers The first output terminal is electrically connected to the first input terminal of the latter power amplifier. The first matching circuit includes a first capacitive element and a first inductive element. One end of the first capacitive element is electrically connected to the first An input end, the other end of the first capacitive element is electrically connected to one end of the first inductive element, the other end of the first inductive element is electrically connected to the first end of the first transistor, the first transistor The third terminal of is electrically connected to the first output terminal. The millimeter wave and terahertz wave radio frequency front-end circuit according to claim 2, wherein the second matching circuit includes a second capacitive element and a second inductive element, one end of the second capacitive element and the second inductive element One end of the second capacitive element is electrically connected to the first end of the first transistor, and the other end of the second capacitive element is electrically connected to the other end of the second inductive element and the ground end. The millimeter wave and terahertz wave radio frequency front-end circuit according to claim 3, wherein the first load circuit includes a first resistance element and a first load inductance element, and two ends of the first resistance element are respectively electrically connected A reference power source and one end of the first load inductance element, and the other end of the first load inductance element is electrically connected to the third end of the first transistor. The RF front-end circuit of millimeter wave and terahertz wave according to claim 4, wherein the complex low noise amplifier is provided with a second input terminal and a second output terminal, and the first one of the two adjacent low noise amplifiers The second input terminal of the low noise amplifier is electrically connected to the second output terminal of the latter low noise amplifier. The third matching circuit includes a third capacitive element and a third inductive element. The third capacitor One end of the third capacitive element is electrically connected to the second input end, the other end of the third capacitive element is electrically connected to one end of the third inductive element, and the other end of the third inductive element is electrically connected to the second transistor of the second transistor. At one end, the third end of the second transistor is electrically connected to the second output end. The RF front-end circuit of millimeter wave and terahertz wave according to claim 5, wherein the fourth matching circuit includes a fourth capacitive element and a fourth inductive element, one end of the fourth capacitive element and the fourth inductive element One end of the fourth capacitive element is electrically connected to the first end of the second transistor, and the other end of the fourth capacitive element is electrically connected to the other end of the fourth inductive element and the ground end. The RF front-end circuit of millimeter wave and terahertz wave according to claim 6, wherein the second load circuit includes a second resistance element and a second load inductance element, and two ends of the second resistance element are electrically connected respectively One end of the reference power source and the second load inductive component, and the other end of the second load inductive component is electrically connected to the third end of the second transistor. The RF front-end circuit of millimeter wave and terahertz wave according to claim 7, wherein the transmitting and receiving switch is provided with a first switching terminal, a second switching terminal and a connecting terminal, and the first switching terminal is electrically connected to the plurality of The first output terminal of the last power amplifier in the power amplifier, the second switching terminal is electrically connected to the second input terminal of the last low noise amplifier in the complex low noise amplifier, and the connection terminal is electrically connected to the antenna , The transmitting and receiving switch selectively turns on the electrical connection of either one of the first and second switching ends with the connecting end, and then selectively turns on the electrical connection between the transmitting unit and the antenna or turns on the receiving unit and the antenna The electrical connection. The millimeter wave and terahertz wave radio frequency front-end circuit according to claim 1, wherein the antenna is a multiple-input multiple-output array antenna. A radio frequency front-end device, including: A transceiving processing unit having a plurality of transceiving processing groups and a power distributor, the power distributor is electrically connected to one end of the corresponding multiple transceiving processing groups, each transceiving processing group is provided with a receiving processing part and a transmitting processing part, The receiving processing part has a first variable gain amplifier and a first phase shifter electrically connected to the first variable gain amplifier, and the transmitting processing part has a second variable gain amplifier and a first phase shifter electrically connected to the first variable gain amplifier. The second phase shifter of two variable gain amplifiers; and A plurality of radio frequency front-end circuits are electrically connected to the other end of the complex transceiving processing group, and each radio frequency front-end circuit includes: A transmitting unit electrically connected to the corresponding transmitting processing part for transmitting a radio frequency output signal. The transmitting unit has a plurality of power amplifiers connected in series with each other, and the plurality of power amplifiers are provided with a first matching circuit and a second matching circuit , A first load circuit and a first transistor, the first transistor is provided with a first end, a second end and a third end, the first end is electrically connected to the first and second matching circuits , The second and third terminals are respectively electrically connected to a ground terminal and the first load circuit; A receiving unit is electrically connected to the corresponding receiving processing part for receiving a radio frequency input signal. The receiving unit has a plurality of low noise amplifiers connected in series with each other, and the plurality of low noise amplifiers are provided with a third matching circuit and a A fourth matching circuit, a second load circuit, and a second transistor. The second transistor is provided with a first end, a second end, and a third end. The first end of the second transistor is connected to the The third and fourth matching circuits are electrically connected, and the second and third ends of the second transistor are electrically connected to the ground terminal and the second load circuit, respectively; and A transmit-receive switch is electrically connected between an antenna and the transmitting unit and the receiving unit, and is used to select the electrical connection between the transmitting unit and the antenna or the electrical connection between the receiving unit and the antenna. The radio frequency front-end device according to claim 10, wherein the plurality of power amplifiers are provided with a first input terminal and a first output terminal, and the first output terminal and the second output terminal of the previous power amplifier in each of the two adjacent power amplifiers The first input end of the power amplifier is electrically connected, the first matching circuit includes a first capacitive element and a first inductive element, one end of the first capacitive element is electrically connected to the first input end, the first The other end of the capacitive element is electrically connected to one end of the first inductive element, the other end of the first inductive element is electrically connected to the first end of the first transistor, and the third end of the first transistor is electrically connected Connect the first output terminal. The radio frequency front-end device according to claim 11, wherein the second matching circuit includes a second capacitive element and a second inductive element, one end of the second capacitive element and one end of the second inductive element, and the first electrical The first end of the crystal is electrically connected, and the other end of the second capacitive element is electrically connected to the other end of the second inductive element and the ground end. The radio frequency front-end device according to claim 12, wherein the first load circuit includes a first resistive element and a first load inductive element, and both ends of the first resistive element are electrically connected to a reference power source and the first One end of the load inductance component, and the other end of the first load inductance component is electrically connected to the third end of the first transistor. The radio frequency front-end device according to claim 13, wherein the plurality of low noise amplifiers are provided with a second input terminal and a second output terminal, and the first low noise amplifier of each two adjacent low noise amplifiers The two input terminals are electrically connected to the second output terminal of the latter low noise amplifier. The third matching circuit includes a third capacitive element and a third inductive element. One end of the third capacitive element is electrically connected to the The second input terminal, the other end of the third capacitive element is electrically connected to one end of the third inductive element, the other end of the third inductive element is electrically connected to the first end of the second transistor, and the second electrical The third terminal of the crystal is electrically connected to the second output terminal. The radio frequency front-end device according to claim 14, wherein the fourth matching circuit includes a fourth capacitive element and a fourth inductive element, one end of the fourth capacitive element, one end of the fourth inductive element, and the second electrical The first end of the crystal is electrically connected, and the other end of the fourth capacitive element is electrically connected to the other end of the fourth inductive element and the ground end. The radio frequency front-end device according to claim 15, wherein the second load circuit includes a second resistive element and a second load inductive element, and two ends of the second resistive element are electrically connected to the reference power source and the second One end of the load inductance component, and the other end of the second load inductance component is electrically connected to the third end of the second transistor. The radio frequency front-end device according to claim 16, wherein the transceiving switch is provided with a first switching terminal, a second switching terminal and a connecting terminal, and the first switching terminal is electrically connected to the last power amplifier of the plurality of power amplifiers The first output terminal, the second switching terminal are electrically connected to the second input terminal of the last low noise amplifier in the plurality of low noise amplifiers, the connection terminal is electrically connected to the antenna, and the transceiver switch is electrically connected to The electrical connection between any one of the first and second switching ends and the connecting end is selectively turned on, and the electrical connection between the transmitting unit and the antenna or the electrical connection between the receiving unit and the antenna is selectively turned on. The radio frequency front-end device according to claim 10, wherein the antenna is a multiple-input multiple-output array antenna. A radio frequency front-end system includes a power divider and a plurality of radio frequency front-end devices according to any one of claims 10-18, and the plurality of radio frequency front-end devices are electrically connected to the power divider.

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