TW202138819A - Probe and electrical connection device - Google Patents

Abstract

An objective of the present invention is to provide a probe capable of reducing degradation of measurement quality and an electrical connection device.

A probe of the present invention includes: a rod-shaped central conductor; an intermediate insulating film surrounding a side surface of the central conductor; and an outer conductive film covering a surface of the intermediate insulating film. The center guide is exposed at a front end of the probe, which is to be in contact with an object to be inspected.

Description

Probe and electrical connection device

The invention relates to a probe and an electrical connection device for measuring the electrical characteristics of an object to be inspected.

In order to measure the electrical characteristics of a test object such as a semiconductor integrated circuit without being separated from the wafer, an electrical connection device having a probe contacting the test object is used. For example, in a state where the probe penetrates through a guide hole formed in the probe head, the probe head is held by the probe head (see Patent Document 1). The probe is made of a metal conductor or wire, plate, electroplated product, etc.

The electrical connection device is to arrange the probe at a position corresponding to the inspection connection pad of the object to be inspected. Therefore, when the semiconductor integrated circuit is further miniaturized so that the arrangement interval of the inspection connection pads becomes narrow, the arrangement interval of the probes also becomes narrow. Therefore, as the pitch of the inspection connection pads narrows, the probes become thinner or thinner due to the narrower diameters.

[Prior Technical Literature]

[Patent Literature]

Patent Document 1: Japanese Patent Application Publication No. 2015-118064

When the probe diameter is made thinner, transmission loss occurs in high-frequency characteristics, or the accuracy of withstand current measurement at high frequencies is reduced, resulting in a decrease in measurement quality. The purpose of the present invention is to provide a probe and an electrical connection device that can reduce the degradation of measurement quality.

According to an aspect of the present invention, a probe can be provided, which is provided with: a rod-shaped central conductor; an intermediate insulating film surrounding the side surface of the central conductor; and an external conductive film covering the surface of the intermediate insulating film, and The center guide system is exposed in the front end contacted by the inspected body.

According to the present invention, it is possible to provide a probe and an electrical connection device that can reduce the degradation of measurement quality.

1: Electrical connection device

2: Subject

10: Probe

11: Center conductor

12: Internal conductive film

13: Intermediate insulating film

14: External conductive film

20: Probe head

21: Top guide plate

22: Bottom guide plate

23: Spacer

24: The first middle guide plate

25: The second middle guide plate

26: Reinforcement

27: Conductive guide plate

30: Wiring board

31: connecting plate

32: GND terminal

101: Front end

102: Base end

110: sheet

111: Zone 1

112: Zone 2

113: Zone 3

121: first resist film

200: middle area

201: The first metal film

202: Resin film

203: second metal film

FIG. 1 is a schematic cross-sectional view along the central axis showing the structure of the probe of the embodiment of the present invention.

Fig. 2 is a schematic cross-sectional view perpendicular to the central axis showing the structure of the probe of the embodiment of the present invention.

FIG. 3 is a schematic diagram showing the structure of the electrical connection device of the embodiment of the present invention.

4 is a schematic diagram showing the structure of the probe head of the electrical connection device of the embodiment of the present invention.

FIG. 5 is a schematic diagram showing another structure of the probe head of the electrical connection device of the embodiment of the present invention.

6 is a schematic cross-sectional view showing an example of the conductive guide plate of the probe head of the electrical connection device of the embodiment of the present invention.

Fig. 7 is a schematic plan view of the conductive guide plate shown in Fig. 6.

Fig. 8 is a schematic diagram showing an example of the outer shape of the probe of the embodiment of the present invention, Fig. 8(a) and Fig. 8(b) are the probes with convex portions formed on the side surface, Fig. 8(c) and Fig. 8 (d) A probe with a recess formed on the side surface.

Fig. 9 is a step diagram (1) for explaining the method of manufacturing the probe of the embodiment of the present invention.

Fig. 10 is a step diagram (Part 2) for explaining the method of manufacturing the probe of the embodiment of the present invention.

FIG. 11 is a step diagram (3) for explaining the method of manufacturing the probe of the embodiment of the present invention.

Fig. 12 is a step diagram (part 4) for explaining the method of manufacturing the probe of the embodiment of the present invention.

FIG. 13 is a step diagram (part 5) for explaining the method of manufacturing the probe of the embodiment of the present invention.

Fig. 14 is a step diagram (part 6) for explaining the method of manufacturing the probe of the embodiment of the present invention.

FIG. 15 is a step diagram (No. 7) for explaining the method of manufacturing the probe of the embodiment of the present invention.

Fig. 16 is a step diagram (No. 8) for explaining the method of manufacturing the probe of the embodiment of the present invention.

FIG. 17 is a step diagram (No. 9) for explaining the method of manufacturing the probe of the embodiment of the present invention.

FIG. 18 is a step diagram (10) for explaining the method of manufacturing the probe of the embodiment of the present invention.

FIG. 19 is a step diagram (No. 11) for explaining the method of manufacturing the probe of the embodiment of the present invention.

Fig. 20 is a step diagram (No. 12) for explaining the method of manufacturing the probe of the embodiment of the present invention.

Fig. 21 is a step diagram (13) for explaining the method of manufacturing the probe of the embodiment of the present invention.

Fig. 22 is a step diagram (14) for explaining the method of manufacturing the probe of the embodiment of the present invention.

FIG. 23 is a step diagram (part 15) for explaining the method of manufacturing the probe of the embodiment of the present invention.

Fig. 24 is a step diagram (No. 16) for explaining the method of manufacturing the probe of the embodiment of the present invention.

Fig. 25 is a step diagram (No. 17) for explaining the method of manufacturing the probe of the embodiment of the present invention.

FIG. 26 is a schematic diagram of another structure of the center conductor of the probe of the embodiment of the present invention.

FIG. 27 is a schematic diagram of another structure of the center conductor of the probe of the embodiment of the present invention.

Next, the implementation mode of the present invention will be described with reference to the drawings. In the description of the following drawings, the same or similar symbols are attached to the same or similar parts. However, the drawings are only schematic diagrams, and it must be noted that the ratio of the thickness of each part is different from reality. And, of course, the drawings also include parts with different dimensional relationships or ratios. The following example embodiments show the devices and methods for embodying the technical thinking of the present invention. The embodiments of the present invention do not limit the materials, shapes, structures, configurations, etc. of the constituent parts to those set out below Content.

The probe 10 of the embodiment shown in FIG. 1 is used to measure the electrical characteristics of the test object. The probe 10 includes: a rod-shaped central conductor 11; an inner conductive film 12 covering the side surface of the central conductor 11; an intermediate insulating film 13 covering the surface of the inner conductive film 12 and surrounding the side surface of the central conductor 11; The external conductive film 14 on the surface of the insulating film 13.

As shown in FIG. 2, the probe 10 has a structure in which an inner conductive film 12, an intermediate insulating film 13, and an outer conductive film 14 are sequentially laminated on the side surface of the center conductor 11. Fig. 2 is a cross-sectional view along the II-II direction of Fig. 1. The internal conductive film 12 is formed between the central conductor 11 and the intermediate insulating film 13. FIG. 2 shows an example of the probe 10 which is perpendicular to the central axis of the central conductor 11 and has a rectangular cross-section.

In addition, at the first end portion (hereinafter referred to as "tip portion 101") and second end portion (hereinafter referred to as "base end portion 102") of the probe 10, the center conductor 11 is exposed. The tip 101 is a part that will come into contact with the subject during measurement.

The material of the center conductor 11 is, for example, a metal material such as copper (Cu) or nickel (Ni). The internal conductive film 12 is, for example, a Cu film, a Ni film, or the like. The intermediate insulating film 13 is, for example, a low-dielectric material film such as polyimide. The external conductive film 14 is, for example, a Cu film, a Ni film, or the like. The intermediate insulating film 13 electrically insulates the central conductor 11 and the outer conductive film 14.

As described above, the probe 10 has a coaxial structure in which the central conductor 11 and the outer conductive film 14 face each other via the intermediate insulating film 13. The external conductive film 14 functions as an electromagnetic shield. Therefore, according to the probe 10, when a high-frequency electrical signal is transmitted to the probe 10, the transmission characteristics of the electrical signal and the loss of current resistance can be reduced.

The probe 10 is manufactured by, for example, the lithography technique described later. The diameter of the probe 10 is, for example, about 50 μm.

On the other hand, if the diameter of the probe of the comparative example in which a metal material such as Cu or Ni is directly used is the same as the diameter of the probe 10, the high-frequency transmission characteristics and resistance of the electrical signal transmitted by the probe are improved. The current will be lost, and the quality of the measurement will be degraded. However, according to the probe 10 having the coaxial structure, it is possible to reduce the deterioration of the measurement quality.

FIG. 3 shows the electrical connection device 1 provided with the probe 10. The electrical connection device 1 is used to measure the characteristics of the object 2 to be inspected. The test object 2 is, for example, a semiconductor integrated circuit formed on a semiconductor substrate. The electrical connection device 1 includes a probe head 20 that holds the probe 10 with the tip portion 101 facing the object 2 to be inspected, and a wiring board 30. In addition, in FIG. 3, the number of probes 10 held by the probe head 20 is four, but of course the number of probes 10 is not limited to four.

As shown in FIG. 3, the probe 10 penetrates the probe head 20. The base end 102 of the probe 10 is connected to a land 31 arranged on the wiring board 30. The land 31 is made of a conductive material such as metal, and an inspection device (not shown) such as a tester is electrically connected to the land 31. Via electrical connection Connecting device 1, the electrical signal is transmitted between the inspection device and the inspected body 2. The wiring substrate 30 is, for example, a printed wiring substrate (PCB) or an interposer (IP) substrate.

The base end 102 of the probe 10 that is in contact with the land 31 has the center conductor 11 exposed. Therefore, the inspection connection pad of the inspected body 2 and the land 31 are electrically connected via the central conductor 11 of the probe 10.

The probe head 20 has a plurality of guide plates respectively formed with guide holes through which the probe 10 penetrates. For example, in the probe head 20 shown in FIG. 4, the top guide plate 21 facing the wiring board 30 is set to the upper stage, and the bottom guide plate 22 facing the inspection object 2 is set to the lower stage. A plurality of guide plates are arranged in the axial direction of the probe 10. The spacer 23 arranged between the outer edge area of the top guide plate 21 and the outer edge area of the bottom guide plate 22 is set inside the probe head 20 to form an intermediate area 200 through which the probe 10 passes.

Furthermore, the probe head 20 shown in FIG. 4 has a first intermediate guide plate 24 and a second intermediate guide plate that are arranged between the top guide plate 21 and the bottom guide plate 22 and penetrated by the probe 10 25. The first intermediate guide plate 24 is arranged in an area close to the top guide plate 21, and the second intermediate guide plate 25 is arranged in an area close to the bottom guide plate 22. Hereinafter, the guide plates arranged between the top guide plate 21 and the bottom guide plate 22, such as the first intermediate guide plate 24 and the second intermediate guide plate 25, are also referred to as "intermediate guide plates".

In addition, when viewed from the surface normal direction of the main surface of the top guide plate 21 (hereinafter referred to as "plan view"), the guide hole of the top guide plate 21 and the bottom guide plate 22 through which the same probe 10 penetrates The position of the guide hole is staggered along the direction parallel to the main surface. Through this arrangement of the guide holes (dislocation arrangement), the probe 10 bends due to elastic deformation in the middle region 200. Therefore, with the subject 2 At the time of contact, the probe 10 is buckled, and the probe 10 is pressed by a predetermined pressure and comes into contact with the object 2 to be inspected.

The top guide plate 21, the bottom guide plate 22, and the spacer 23 are made of insulating materials such as ceramics. The first intermediate guide plate 24 is a guide plate having conductivity using a conductive film such as a metal film (hereinafter referred to as "conductive guide plate"). The second intermediate guide plate 25 is a film of resin or the like. By using a conductive guide plate for the first intermediate guide plate 24, the outer conductive films 14 of the plurality of probes 10 held by the probe head 20 are electrically connected to each other.

By electrically connecting the first intermediate guide plate 24 to the external GND terminal of the probe head 20, the first intermediate guide plate 24 is set to a ground potential. The first intermediate guide plate 24 set at the ground potential is in contact with the outer conductive film 14 of the probe 10, so that the shielding effect in the probe 10 can be obtained.

In the case where the probe head 20 holds a probe belonging to a comparative example of a metal monomer, in order to prevent short circuits between the probes, a polyimide film or the like is used on all the intermediate guide plates including the first intermediate guide plate 24 Insulating material. However, since the probe 10 has a coaxial structure, a conductive guide plate can be used for the first intermediate guide plate 24. In a conductive guide plate having a higher rigidity than a resin film by using a conductive film such as a metal film, the electrical connection device 1 includes the operation of passing the probe 10 through a through hole formed in the middle guide plate. The replacement of the probe 10 is easy.

Moreover, as shown in FIG. 5, the probe head 20 may be equipped with the reinforcement member 26 which consists of a metal material through which the probe 10 penetrates like the guide plate. The probe 10 passes through a through hole formed in the reinforcing member 26. The reinforcement member 26 functions as a reinforcement plate that improves the mechanical strength of the probe head 20. In addition, the reinforcing member 26 is also used for positioning and fixing the guide plates before and after the misalignment.

Furthermore, the reinforcing member 26 functions as an auxiliary plate when the conductive guide plate is grounded. As shown in FIG. 5, the end of the conductive guide plate 27 arranged at the boundary between the reinforcing member 26 and the bottom guide plate 22 is pulled out to the outside of the probe head 20 and connected to the GND terminal 32 of the wiring board 30. The reinforcing member 26 is in contact with the conductive guide plate 27, and the external conductive film 14 of the probe 10 is grounded via the reinforcing member 26 and the conductive guide plate 27. Since the conductive guide plate 27 is grounded, the reinforcing member 26 in contact with the conductive guide plate 27 also exerts the shielding effect in the probe 10. In addition, a conductive guide plate 27 may be arranged at the boundary between the reinforcing member 26 and the top guide plate 21. The through hole of the reinforcing member 26 is longer than the through hole of the conductive guide plate 27. Therefore, in the through hole of the reinforcing member 26, the probe 10 is in electrical contact with the reinforcing member 26, and the probe 10 can be set more reliably. It is the ground potential.

Figure 6 shows an example of a conductive guide plate. The conductive guide plate shown in FIG. 6 has a structure in which a first metal film 201, a resin film 202, and a second metal film 203 are laminated. The first metal film 201 and the second metal film are, for example, metal films such as a Cu film, a Ni film, and a titanium film. The resin film 202 is a low-dielectric material film such as a polyimide film.

The via hole penetrated by the probe 10 of the conductive guide plate has a structure that makes it easy to contact the metal film of the conductive guide plate and the external conductive film 14 of the probe 10. For example, a shape in which a metal film protrudes from the outer edge of the via hole inward is used. Specifically, as shown in FIG. 7, in order to cover a part of the rectangular via hole formed in the resin film 202, the first metal film 201 and the second metal film 203 are formed in a star shape or in a plan view. Cross-shaped guide holes.

8(a) to 8(d) show examples of the shape of the probe 10. The probe 10 shown in FIGS. 8(a) and 8(b) has a shape in which the convex portion formed on the side surface is larger than the inner diameter of the guide hole of the guide plate. Therefore, the probe head 20 holds the probe 10 in a state where the convex portion is caught on the guide plate. Figure 8(c) and figure The probe 10 shown in 8(d) has a shape in which the concave portion formed on the side surface is smaller than the inner diameter of the guide hole of the guide plate, and the portion other than the concave portion is larger than the inner diameter of the guide hole. Therefore, the probe head 20 holds the probe 10 in a state where the recess penetrates the guide hole of the guide plate.

Therefore, according to the probe 10 shown in FIGS. 8(a) to 8(d), the probe 10 can be prevented from falling off the guide plate. For example, the position of the convex portion or the concave portion formed on the side surface of the probe 10 is set according to the position of the conductive guide plate of the probe head 20.

Hereinafter, a method of manufacturing the probe 10 will be described with reference to the drawings. In addition, the manufacturing method of the probe 10 described below is only an example, and it can be realized by various other manufacturing methods including this modification.

First, as shown in FIG. 9, the peeling sheet 110 is attached to the upper surface of the base material 100. The sheet 110 is a sheet that can be easily peeled from the base 100 using a solvent such as isopropyl alcohol (IPA) or the like.

As shown in FIG. 10, a first resist film 121 is formed on the sheet 110. The film thickness of the first resist film 121 is set according to the diameter of the probe 10. Next, as shown in FIG. 11, a part of the first resist film 121 is etched away using a photolithography technique. FIG. 12 shows a plan view after the first resist film 121 is patterned. The first resist film 121 is patterned in accordance with the shape when viewed from the side of the probe 10.

Next, as shown in FIG. 13, the external conductive film 14 is formed on the surface of the exposed sheet 110 and the surface of the first resist film 121. For example, a copper film or a Ni film is formed as the external conductive film 14 by a sputtering method. Furthermore, as shown in FIG. 14, an intermediate insulating film 13 is formed on the surface of the external conductive film 14 by a sputtering method or the like. The intermediate insulating film 13 is, for example, a polyimide film. Then, As shown in FIG. 15, an internal conductive film 12 is formed on the surface of the intermediate insulating film 13 by a sputtering method or the like. The internal conductive film 12 is, for example, a Cu film.

As shown in FIG. 16, the concave portion of the first resist film 121 is buried with a Ni film to form the center conductor 11. For example, the internal conductive film 12 is used as an electrode for electroplating, and the center conductor 11 is formed by an electrolytic plating method. Then, as shown in FIG. 17, the Ni film, the outer conductive film 14, the intermediate insulating film 13, and the inner conductive film 12 deposited on the first resist film 121 are removed by plane polishing.

Next, after the second resist film 122 is formed on the entire surface, as shown in FIG. 18, a part of the second resist film 122 is removed using a photolithography technique so that the upper surface of the center conductor 11 is exposed. Next, using the second resist film 122 as an etching mask, as shown in FIG. 19, the exposed upper portion of the central conductor 11 and the upper portion of the internal conductive film 12 are etched away.

As shown in FIG. 20, an internal conductive film 12 and an intermediate insulating film 13 are formed on the upper surface of the center conductor 11. Then, as shown in FIG. 21, the first resist film 121 and the second resist film 122 are removed.

Next, as shown in FIG. 22, the metal mask 130 for sputtering is arranged so that the opening of the metal mask 130 is located above the center conductor 11. Next, the metal mask 130 is used as a sputtering mask, and as shown in FIG. 23, an external conductive film 14 is formed on the intermediate insulating film 13 by a sputtering method. As described above, the external conductive film 14 is formed using the dry plating method.

Then, an etching resist 140 is formed on the entire surface. Next, as shown in the plan view of FIG. 24, the etching resist 140 above the tip portion 101 and the base end portion 102 of the probe 10 is removed using the lithography technique. Next, the etching resist 140 is used as an etching mask, and the etching The outer conductive film 14, the intermediate insulating film 13, and the inner conductive film 12 are removed. Thereby, as shown in FIG. 25, the center conductor 11 is exposed in the front end part 101 and the base end part 102 of the probe 10. As shown in FIG.

Then, the etching resist 140 is removed. Next, the sheet 110 is peeled off to complete the probe 10. As described above, the probe 10 can be manufactured by a MEMS process.

According to the above-mentioned manufacturing method, by layering an insulating film and a thin-film plating film on the surface area of the center conductor 11, a coaxial structure with a shielding effect can be manufactured without significantly increasing the outer diameter compared to the probe of the comparative example which is a single metal. The probe 10. In addition, the diameter of the probe 10 is limited by the upper limit of the film thickness and aspect ratio of the resist film that can be formed by the lithography technique. For example, the diameter of the probe 10 is about 50 μm. In addition, considering the assembly in the probe head 20, the total length of the probe 10 is, for example, about 2 to 3 mm.

Although the intermediate insulating film 13 is formed in order to form the probe 10 into a coaxial structure, once it is insulated, current cannot flow. Therefore, the above-mentioned manufacturing method is to form the inner conductive film 12 on the surface of the center conductor 11 as a thinner conductive film for energization, and to form the center conductor 11 by electrolytic plating. For example, the internal conductive film 12 is a Cu film, and an Ni film is formed as the center conductor 11 by an electrolytic plating method.

In the above, the example in which the Ni material is used as the material of the central conductor 11 has been described, but the Cu material may also be used as the material of the central conductor 11. In addition, the center conductor 11 may not be of a single material.

For example, as shown in FIG. 26, the central conductor 11 may have a structure in which a first region 111 made of a Cu material, a second region 112 made of a Ni material, and a third region 113 made of a Cu material are laminated. Alternatively, as shown in FIG. 27, the central conductor 11 may be a layered first region 111 made of Ni material, a second region 112 made of Cu material, and a third zone made of Ni material. The structure of the domain 113. FIGS. 26 and 27 show the state of the step of forming the center conductor 11 described with reference to FIG. 16 in the manufacturing process of the probe 10 described above. In the probe 10 having the structure shown in FIGS. 26 and 27, the part of the Ni material of the center conductor 11 contributes to strengthening the elasticity of the probe 10. By using the probe 10 that is elastically deformable, an overload can be applied to press the probe 10 to the object 2 to be inspected, or a preload can be applied to press the probe 10 to the connecting plate 31. In this way, the electrical connection between the inspected body 2 and the connection pad 31 and the probe 10 can be ensured.

(Other implementation types)

As mentioned above, the present invention has been described in the form of implementation, but the discussion and drawings forming a part of the present disclosure should not be understood as limiting the content of the present invention. Those with ordinary knowledge in the technical field to which the present invention belongs should be able to understand various alternative implementation types, embodiments, and application techniques from this disclosure.

For example, the above shows an example of the probe 10 having a rectangular cross-sectional shape, but the cross-sectional shape of the probe 10 may be other polygonal shapes, or the cross-sectional shape of the probe 10 may be a circular shape.

In this way, the present invention naturally includes various embodiments and the like that are not described herein.

10: Probe

11: Center conductor

12: Internal conductive film

13: Intermediate insulating film

14: External conductive film

101: Front end

102: Base end

Claims (8)

A type of probe used to measure the electrical characteristics of the object to be inspected. The aforementioned probe system has: Rod-shaped center conductor; The intermediate insulating film surrounds the side surface of the aforementioned central conductor; and The external conductive film covers the surface of the aforementioned intermediate insulating film, In the first end that will come into contact with the test subject during measurement, the center guide system is exposed. The probe according to claim 1, wherein: In the second end, the aforementioned center guide system is exposed. The probe as described in claim 1, further equipped with: The internal conductive film is arranged between the central conductor and the intermediate insulating film, and covers the side surface of the central conductor. The probe according to claim 1, wherein: The aforementioned center conductor is nickel or copper, The aforementioned intermediate insulating film is a low-dielectric material film, The aforementioned external conductive film is nickel or copper. An electrical connection device, which is provided with: The probe according to any one of claims 1 to 4; and The first end portion of the probe is directed toward the object to be inspected, and the probe head of the probe is held. The electrical connection device according to claim 5, wherein: The aforementioned probe head has a conductive guide plate, The aforementioned external conductive film is electrically connected to the aforementioned conductive guide plate, The external conductive film is set to a ground potential via the conductive guide plate. The electrical connection device according to claim 5, wherein: The probe head is provided with a reinforcing member made of a metal material that improves the mechanical strength of the probe head, The probe passes through the through hole formed in the reinforcing member. The electrical connection device described in claim 5 is further equipped with: The wiring board is a connection pad with a conductive material arranged on the main surface, In the second end of the probe connected to the connection pad, the center guide system is exposed.

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