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TW202124526A - Method for producing polyimide precursor and polyimide - Google Patents

Method for producing polyimide precursor and polyimide Download PDF

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TW202124526A
TW202124526A TW108146512A TW108146512A TW202124526A TW 202124526 A TW202124526 A TW 202124526A TW 108146512 A TW108146512 A TW 108146512A TW 108146512 A TW108146512 A TW 108146512A TW 202124526 A TW202124526 A TW 202124526A
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monomer
polyamide
tetracarboxylic dianhydride
polyimide
diamine
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TWI802775B (en
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丘建華
楊焙凱
吳俊明
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新揚科技股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1067Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
    • C08G73/1071Wholly aromatic polyimides containing oxygen in the form of ether bonds in the main chain
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1003Preparatory processes
    • C08G73/1007Preparatory processes from tetracarboxylic acids or derivatives and diamines
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1003Preparatory processes
    • C08G73/1007Preparatory processes from tetracarboxylic acids or derivatives and diamines
    • C08G73/1028Preparatory processes from tetracarboxylic acids or derivatives and diamines characterised by the process itself, e.g. steps, continuous
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    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
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    • C08J2379/00Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
    • C08J2379/04Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
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Abstract

The present invention relates to a method for producing polyimide precursor and a polyimide. The polyimide precursor consisted of a first polyamic acid, a second polyamic acid and a third polyamic acid is produced by a first reaction, a second reaction and a third reaction. The polyimide precursor is polymerized by a specific tetracarboxylic dianhydride monomer and diamine monomer, such that the polyimide precursor has lower dielectric constant and dielectric loss factor, further decreasing insertion loss, therefore enhancing transmission rate of a flexible circuit substrate.

Description

聚醯亞胺前驅物的製作方法及聚醯亞胺 Preparation method of polyimide precursor and polyimide

本發明係有關一種聚醯亞胺前驅物,特別是提供一種具有低介電常數與介電損耗因子之聚醯亞胺前驅物的製作方法及所製得之聚醯亞胺。 The present invention relates to a polyimide precursor, and in particular provides a method for preparing a polyimide precursor with low dielectric constant and dielectric loss factor and the prepared polyimide.

隨著科技產業之發展,高頻傳輸已為無線通訊產品之主要傳輸手段,故具有快速傳輸速率之高頻基板係目前之發展重點。其中,為滿足高頻傳輸之要求,基板之訊號損失須有效地被降低。 With the development of the technology industry, high-frequency transmission has become the main transmission method for wireless communication products, so high-frequency substrates with fast transmission rates are currently the focus of development. Among them, in order to meet the requirements of high-frequency transmission, the signal loss of the substrate must be effectively reduced.

一般而言,基板中之訊號損失係指訊號之插入損耗(insertion loss),而插入損耗係反射損耗、材料損耗與輻射損耗之總和。其中,材料損耗包含介質損耗與導體損耗。介質損耗係由絕緣層所控制,而導體損耗係相關於導電層之導電性與表面粗糙度。其次,介質損耗係由下式(I)計算而得,且由式(I)可知,降低材料之介電常數與介電損耗因子可有效減少其介質損耗,而有助於高頻傳輸。 Generally speaking, the signal loss in the substrate refers to the insertion loss of the signal, and the insertion loss is the sum of reflection loss, material loss, and radiation loss. Among them, material loss includes dielectric loss and conductor loss. The dielectric loss is controlled by the insulating layer, and the conductor loss is related to the conductivity and surface roughness of the conductive layer. Secondly, the dielectric loss is calculated by the following formula (I), and it can be seen from the formula (I) that reducing the dielectric constant and dielectric loss factor of the material can effectively reduce the dielectric loss and help high-frequency transmission.

Figure 108146512-A0101-12-0001-1
Figure 108146512-A0101-12-0001-1

於式(I)中,Dk代表介電常數,Df代表介電損耗因子,且f代表頻率。 In formula (I), Dk represents the dielectric constant, Df represents the dielectric loss factor, and f represents the frequency.

於現有之電荷傳輸基板中,聚醯亞胺覆銅積層板因具有輕薄與可撓曲性,故其廣泛應用於電子產品。然而,習知聚醯亞胺膜具有較高之介電常數與介電損耗因子,故無法滿足高頻傳輸之應用需求。 Among the existing charge transport substrates, polyimide copper clad laminates are widely used in electronic products because of their lightness and flexibility. However, the conventional polyimide film has a relatively high dielectric constant and dielectric loss factor, so it cannot meet the application requirements of high-frequency transmission.

有鑑於此,亟須提供一種聚醯亞胺前驅物的製作方法及聚醯亞胺,以改進習知聚醯亞胺具有過高之介電常數與介電損耗因子的缺陷。 In view of this, there is an urgent need to provide a preparation method of polyimide precursor and polyimide to improve the defects of conventional polyimide that has an excessively high dielectric constant and dielectric loss factor.

因此,本發明之一態樣是在提供一種聚醯亞胺前驅物的製作方法,此製作方法係選用特定之四羧酸二酐單體與二胺單體來進行分段反應,而可製得規則排列之嵌段共聚合單體,進而降低電荷之傳遞阻力,故可滿足高頻傳輸之要求。 Therefore, one aspect of the present invention is to provide a method for preparing a polyimide precursor. The block copolymerized monomers are arranged regularly, thereby reducing the resistance of charge transfer, so it can meet the requirements of high-frequency transmission.

本發明之另一態樣是提供一種聚醯亞胺,其係藉由加熱聚醯亞胺前驅物所製得,且此聚醯亞胺前驅物係利用前述之製作方法所製得。 Another aspect of the present invention is to provide a polyimide, which is prepared by heating the polyimide precursor, and the polyimide precursor is prepared by the aforementioned manufacturing method.

根據本發明之一態樣,提出一種聚醯亞胺前驅物的製作方法。此製作方法係先對第一四羧酸二酐單體與第一二胺單體進行第一反應,以形成第一聚醯胺酸。然後,對第一聚醯胺酸、第二四羧酸二酐單體與第二二胺單體進行第二反應,以形成嵌段聚醯胺酸。此嵌段聚醯胺酸係由第一聚 醯胺酸與第二聚醯胺酸所組成,其中此第二聚醯胺酸係由第二四羧酸二酐單體與第二二胺單體所形成。接著,對嵌段聚醯胺酸、第三四羧酸二酐單體與第三二胺單體進行第三反應,以形成聚醯亞胺前驅物。聚醯亞胺前驅物係由嵌段聚醯胺酸與第三聚醯胺酸所組成,其中第三聚醯胺酸係由第三四羧酸二酐單體與第三二胺單體所形成。第一四羧酸二酐單體或第二四羧酸二酐單體之一者可為主鏈具有醚基之四羧酸二酐單體,且第三二胺單體可為主鏈具有醚基之二胺單體或側鏈具有烷基之二胺單體。 According to one aspect of the present invention, a method for preparing a polyimide precursor is provided. In this production method, the first tetracarboxylic dianhydride monomer and the first diamine monomer are first reacted to form the first polyamide acid. Then, a second reaction is performed on the first polyamide acid, the second tetracarboxylic dianhydride monomer, and the second diamine monomer to form a block polyamide acid. This block polyamide is made from the first poly The amide acid and the second polyamide acid are composed, wherein the second polyamide acid is formed by the second tetracarboxylic dianhydride monomer and the second diamine monomer. Then, a third reaction is performed on the block polyamide acid, the third tetracarboxylic dianhydride monomer, and the third diamine monomer to form a polyimide precursor. The polyimide precursor is composed of block polyamide and the third polyamide. The third polyamide is composed of the third tetracarboxylic dianhydride monomer and the third diamine monomer. form. Either the first tetracarboxylic dianhydride monomer or the second tetracarboxylic dianhydride monomer may have a tetracarboxylic dianhydride monomer having an ether group in the main chain, and the third diamine monomer may have Diamine monomers with ether groups or diamine monomers with alkyl groups in the side chain.

依據本發明之一實施例,基於前述聚醯亞胺前驅物之含量為100莫耳百分比,第三聚醯胺酸之含量為10莫耳百分比至30莫耳百分比。 According to an embodiment of the present invention, based on the content of the aforementioned polyimine precursor being 100 mol%, the content of the third polyamide is 10 mol% to 30 mol%.

依據本發明之另一實施例,基於聚醯亞胺前驅物之含量為100莫耳百分比,前述第一四羧酸二酐單體或第二四羧酸二酐單體之此者所形成的第一聚醯胺酸或第二聚醯胺酸之含量為10莫耳百分比至60莫耳百分比。 According to another embodiment of the present invention, based on the content of the polyimide precursor being 100 mole percent, the first tetracarboxylic dianhydride monomer or the second tetracarboxylic dianhydride monomer is formed by The content of the first polyamide or the second polyamide is 10 mol% to 60 mol%.

依據本發明之又一實施例,基於聚醯亞胺前驅物之含量為100莫耳百分比,前述第一四羧酸二酐單體或第二四羧酸二酐單體之另一者所形成的第一聚醯胺酸或第二聚醯胺酸之含量為20莫耳百分比至75莫耳百分比。 According to another embodiment of the present invention, based on the content of the polyimide precursor being 100 mole percent, the other of the aforementioned first tetracarboxylic dianhydride monomer or second tetracarboxylic dianhydride monomer is formed The content of the first polyamide or the second polyamide is 20 mol% to 75 mol%.

依據本發明之再一實施例,前述之第一二胺單體與第二二胺單體不為主鏈具有醚基之二胺單體或側鏈具有烷基之二胺單體。 According to another embodiment of the present invention, the aforementioned first diamine monomer and second diamine monomer are not diamine monomers with ether groups in the main chain or diamine monomers with alkyl groups in the side chains.

依據本發明之又另一實施例,前述之第三四羧酸二酐單體不為主鏈具有醚基之四羧酸二酐單體。 According to yet another embodiment of the present invention, the aforementioned third tetracarboxylic dianhydride monomer is not a tetracarboxylic dianhydride monomer having an ether group in the main chain.

依據本發明之再另一實施例,前述聚醯亞胺前驅物之總固含量為10重量百分比至25重量百分比。 According to still another embodiment of the present invention, the total solid content of the aforementioned polyimide precursor is 10 wt% to 25 wt%.

根據本發明之另一態樣,提出一種聚醯亞胺。此聚醯亞胺係藉由加熱聚醯亞胺前驅物所形成,且此聚醯亞胺前驅物係利用前述之製作方法所製得。其中,聚醯亞胺之每一分子鏈係由第一聚醯胺酸、第二聚醯胺酸與第三聚醯胺酸所組成。 According to another aspect of the present invention, a polyimide is provided. The polyimide is formed by heating the polyimine precursor, and the polyimine precursor is prepared by the aforementioned manufacturing method. Among them, each molecular chain of the polyimide is composed of the first polyamide, the second polyamide, and the third polyamide.

依據本發明之一實施例,前述聚醯亞胺之介電損耗因子為0.003至0.005且介電常數為3.0至3.7。 According to an embodiment of the present invention, the dielectric loss factor of the aforementioned polyimide is 0.003 to 0.005 and the dielectric constant is 3.0 to 3.7.

應用本發明聚醯亞胺前驅物的製作方法及聚醯亞胺,其利用特定之四羧酸二酐單體與二胺單體來進行分段反應,而可形成由第一聚醯胺酸、第二聚醯胺酸與第三聚醯胺酸所組成之嵌段聚醯亞胺前驅物。第一聚醯胺酸可對聚醯亞胺前驅物提供剛硬之分子鏈段,以使後續所製得之聚醯亞胺具有良好之尺寸安定性。第二聚醯胺酸與第三聚醯胺酸中之長分子鏈段可有效減少所製得聚醯亞胺之醯亞胺基團密度,而降低介電損耗因子,進而有助於減少後續銅箔線路傳遞訊號的能量損失。此外,第三聚醯胺酸之長分子鏈段亦有助於提升聚醯亞胺前驅物之塗佈性,而可滿足應用需求。 Applying the preparation method of the polyimide precursor and the polyimide of the present invention, the specific tetracarboxylic dianhydride monomer and the diamine monomer are used to carry out the stepwise reaction, and the first polyimide can be formed , A block polyimide precursor composed of the second polyamide and the third polyamide. The first polyimide can provide rigid molecular segments to the polyimide precursor, so that the subsequently prepared polyimide has good dimensional stability. The long molecular chain segments in the second polyamide and the third polyamide can effectively reduce the density of the imine group of the polyimide produced, and reduce the dielectric loss factor, thereby helping to reduce subsequent The copper foil circuit transmits the energy loss of the signal. In addition, the long molecular chain segment of the third polyimide also helps to improve the coatability of the polyimide precursor, which can meet application requirements.

以下仔細討論本發明實施例之製造和使用。然而,可以理解的是,實施例提供許多可應用的發明概念,其可實施於各式各樣的特定內容中。所討論之特定實施例僅供說明,並非用以限定本發明之範圍。 The manufacture and use of the embodiments of the present invention are discussed in detail below. However, it can be understood that the embodiments provide many applicable inventive concepts, which can be implemented in various specific contents. The specific embodiments discussed are for illustration only, and are not intended to limit the scope of the present invention.

本發明之聚醯亞胺前驅物係由第一聚醯胺酸(A1)、第二聚醯胺酸(A2)與第三聚醯胺酸(A3)所組成之嵌段聚合物。依據後述聚醯亞胺前驅物之製作方法,所製得之聚醯亞胺前驅物可具有如下式(i-1)至式(i-3)所示之規則嵌段例示結構。可理解的是,本發明之聚醯亞胺前驅物不限於下列之例示結構,依據後述之製作方法,本案所屬技術領域具有通常知識者可理解聚醯亞胺前驅物之其他結構。 The polyimide precursor of the present invention is a block polymer composed of a first polyamide (A1), a second polyamide (A2) and a third polyamide (A3). According to the production method of the polyimide precursor described below, the prepared polyimine precursor may have the following example structures of regular blocks as shown in the following formulas (i-1) to (i-3). It is understandable that the polyimide precursor of the present invention is not limited to the following exemplified structures. According to the production method described later, a person with ordinary knowledge in the technical field to which this case belongs can understand other structures of the polyimide precursor.

Figure 108146512-A0101-12-0005-2
Figure 108146512-A0101-12-0005-2

Figure 108146512-A0101-12-0005-3
Figure 108146512-A0101-12-0005-3

Figure 108146512-A0101-12-0005-4
Figure 108146512-A0101-12-0005-4

前述之第一聚醯胺酸(A1)、第二聚醯胺酸(A2)與第三聚醯胺酸(A3)均係由四羧酸二酐單體與二胺單體反應形成。其中,基於欲製得之聚醯胺酸的結構,所選用之四羧酸二酐單體與二胺單體均可獨立地為剛硬單體或柔韌單體。 The aforementioned first polyamide (A1), second polyamide (A2) and third polyamide (A3) are all formed by the reaction of tetracarboxylic dianhydride monomer and diamine monomer. Among them, based on the structure of the polyamide acid to be prepared, the selected tetracarboxylic dianhydride monomer and diamine monomer can be independently rigid monomers or flexible monomers.

本發明所稱之「剛硬單體」係指單體結構較為剛硬,而不易產生分子結構之轉動變化,故此剛硬單體有助於提升所形成聚合物之結構剛硬性,而改善所製得產品之尺寸安定性。可理解的是,剛硬單體之主鏈結構一般係由苯環所組成。在其他具體例中,剛硬單體之苯環亦可由酮基、醯胺基、酯基及/或其他適當之剛硬基團所連結。 The "rigid monomer" referred to in the present invention means that the monomer structure is relatively rigid, and it is not easy to produce rotational changes in the molecular structure. Therefore, the rigid monomer helps to enhance the structural rigidity of the formed polymer and improve the structure of the polymer. The dimensional stability of the manufactured product. It is understandable that the main chain structure of rigid monomers is generally composed of benzene rings. In other specific examples, the benzene ring of the rigid monomer may also be linked by a ketone group, an amide group, an ester group and/or other appropriate rigid groups.

本發明所稱之「柔韌單體」係相對於前述剛硬單體之用語。據此,柔韌單體易產生分子結構之轉動變化,及/或具有結構較為柔韌之側鏈基團。須說明的是,雖然柔韌單體較為柔韌,但其主鏈結構亦可由苯環所組成,其中主鏈結構之苯環間可藉由醚基來連結,或者主鏈結構之苯環可具有烷基取代基,而具有較長之單體分子結構。由於柔韌單體為具有長分子結構之單體,故後續所製得之聚醯亞胺鏈段具有較低之醯亞胺官能基密度,而可避免醯亞胺官能基因吸水所導致之高介電損失因子,故可有效降低材料之介電常數(Dk)與介電損耗因子(Df)。在一些例子中,當單體具有較長之分子鏈結構時,由於此類單體亦可有效降低所製得之聚醯亞胺鏈段的醯亞胺官能基密度,故此些單體可歸屬為「柔韌單體」。換言之,本案之「柔韌單體」主要係有助於降低所形成之聚醯亞胺鏈段的醯亞胺官能基密度。 The term "flexible monomer" referred to in the present invention is a term relative to the aforementioned rigid monomer. Accordingly, flexible monomers are prone to rotational changes in molecular structure, and/or have side chain groups with more flexible structures. It should be noted that although the flexible monomer is more flexible, its main chain structure can also be composed of benzene rings. Among them, the benzene rings of the main chain structure can be connected by ether groups, or the benzene rings of the main chain structure can have an alkane. Substituent groups, and have a longer monomer molecular structure. Since the flexible monomer is a monomer with a long molecular structure, the polyimine segment produced subsequently has a lower density of the imine functional group, which can avoid the high molecular weight caused by the water absorption of the imine functional gene. Electric loss factor, so it can effectively reduce the dielectric constant (Dk) and dielectric loss factor (Df) of the material. In some cases, when the monomer has a longer molecular chain structure, since such monomers can also effectively reduce the density of the imine functional groups of the polyimine segment prepared, these monomers can be assigned It is a "flexible monomer". In other words, the "flexible monomer" in this case mainly helps to reduce the density of the imine functional group of the polyimine segment formed.

於本發明之聚醯亞安前驅物的製作方法中,四羧酸二酐單體(a1)與二胺單體(b1)係先進行第一反應,以形成聚醯胺酸(A1)。然後,對聚醯胺酸(A1)、四羧酸二酐單體(a2)與二胺單體(b2)進行第二反應,以形成嵌段聚醯胺 酸。此嵌段聚醯胺酸係由聚醯胺酸(A1)與聚醯胺酸(A2)所組成,其中聚醯胺酸(A2)係由四羧酸二酐單體(a2)與二胺單體(b2)反應形成。 In the preparation method of the polyamide precursor of the present invention, the tetracarboxylic dianhydride monomer (a1) and the diamine monomer (b1) undergo a first reaction to form the polyamide acid (A1). Then, a second reaction is performed on the polyamide acid (A1), the tetracarboxylic dianhydride monomer (a2) and the diamine monomer (b2) to form a block polyamide acid. This block polyamide is composed of polyamide (A1) and polyamide (A2), among which polyamide (A2) is composed of tetracarboxylic dianhydride monomer (a2) and diamine Monomer (b2) is formed by reaction.

為提升所製得聚醯亞胺前驅物之結構剛硬性,二胺單體(b1)與二胺單體(b2)可選用剛硬單體。在一些具體例中,剛硬單體之二胺單體(b1)與二胺單體(b2)分別可包含但不限於對-苯二胺(p-PDA)、4,4'-二氨基苯甲醯苯胺(DABA)、其他適當之二胺單體,或上述單體之任意混合。 In order to improve the structural rigidity of the prepared polyimide precursor, the diamine monomer (b1) and the diamine monomer (b2) can be selected as rigid monomers. In some specific examples, the diamine monomer (b1) and the diamine monomer (b2) of the rigid monomer may respectively include, but are not limited to, p-phenylenediamine (p-PDA), 4,4'-diamino Benzoaniline (DABA), other suitable diamine monomers, or any mixture of the above monomers.

當進行前述之第一反應時,四羧酸二酐單體(a1)可為剛硬單體。在一些具體例中,剛硬單體之四羧酸二酐單體(a1)可為3,3',4,4'-二苯甲酮四甲酸二酐(BTDA)、3,3',4,4'-聯苯四甲酸二酐(s-BPDA)、對-苯基二(偏苯三酸酯)二四羧酸二酐(TAHQ)、均苯四甲酸二酐(PMDA)、其他適當之四羧酸二酐單體,或上述單體之任意混合。依據前述說明,當四羧酸二酐單體(a1)與二胺單體(b1)均為剛硬單體時,反應所形成之聚醯胺酸(A1)可具有較剛硬之聚合物主鏈結構,進而具有較高之結構剛硬性。 When the aforementioned first reaction is carried out, the tetracarboxylic dianhydride monomer (a1) may be a rigid monomer. In some specific examples, the tetracarboxylic dianhydride monomer (a1) of the rigid monomer can be 3,3',4,4'-benzophenonetetracarboxylic dianhydride (BTDA), 3,3', 4,4'-Biphenyltetracarboxylic dianhydride (s-BPDA), p-phenylbis(trimellitic acid ester) bistetracarboxylic dianhydride (TAHQ), pyromellitic dianhydride (PMDA), others Appropriate tetracarboxylic dianhydride monomer, or any mixture of the above monomers. According to the foregoing description, when the tetracarboxylic dianhydride monomer (a1) and the diamine monomer (b1) are both rigid monomers, the polyamide acid (A1) formed by the reaction can have a relatively rigid polymer The main chain structure has higher structural rigidity.

於第一反應中,四羧酸二酐單體(a1)與二胺單體(b1)之莫耳比值較佳可為0.9:1至1:1。第一反應係使用本發明所屬技術領域具有通常知識者所熟知之反應溫度與其他反應參數來進行,故在此不另贅述。可理解的,第一反應製得之聚醯胺酸(A1)係膠態溶液。含有聚醯胺酸(A1)之膠態溶液的黏度可為20cps至12000cps,且較佳可為100cps至6000cps。 In the first reaction, the molar ratio of the tetracarboxylic dianhydride monomer (a1) to the diamine monomer (b1) may preferably be 0.9:1 to 1:1. The first reaction is carried out by using the reaction temperature and other reaction parameters that are well known to those with ordinary knowledge in the technical field of the present invention, so it will not be repeated here. It is understandable that the polyamide acid (A1) prepared by the first reaction is a colloidal solution. The viscosity of the colloidal solution containing polyamide acid (A1) may be 20 cps to 12000 cps, and preferably 100 cps to 6000 cps.

基於所製得之聚醯亞胺前驅物的含量為100莫耳百分比,聚醯胺酸(A1)之含量可為20莫耳百分比至75莫耳百分比,較佳為20莫耳百分比至60莫耳百分比,且更佳為30莫耳百分比至50莫耳百分比。 Based on the prepared polyimide precursor content of 100 mol%, the content of polyamide acid (A1) can be 20 mol% to 75 mol%, preferably 20 mol% to 60 mol% Ear percentage, and more preferably 30 mol% to 50 mol%.

當進行前述之第二反應時,四羧酸二酐單體(a2)可為具長鏈結構之單體(如前述之柔韌單體)。在一些實施例中,四羧酸二酐單體(a2)可包含但不限於主鏈具有醚基之四羧酸二酐單體、其他適當之四羧酸二酐單體,或上述單體之任意混合。在一些具體例中,具長鏈結構之單體的四羧酸二酐單體(a2)可為對-苯基二(偏苯三酸酯)二四羧酸二酐(TAHQ)、4,4'-對苯二氧雙鄰苯二甲酸酐(HQDA)、其他適當之四羧酸二酐單體,或上述單體之任意混合。據此,於第二反應所形成之聚醯胺酸(A2)中,四羧酸二酐單體(a2)之長鏈結構可有效降低聚醯胺酸(A2)之介電常數與介電損耗因子,而剛硬單體之二胺單體(b2)仍可維持聚醯胺酸(A2)之鏈段的結構剛硬性。 When the aforementioned second reaction is performed, the tetracarboxylic dianhydride monomer (a2) can be a monomer with a long chain structure (such as the aforementioned flexible monomer). In some embodiments, the tetracarboxylic dianhydride monomer (a2) may include, but is not limited to, a tetracarboxylic dianhydride monomer having an ether group in the main chain, other suitable tetracarboxylic dianhydride monomers, or the above-mentioned monomers The arbitrary mix. In some specific examples, the tetracarboxylic dianhydride monomer (a2) of the monomer with a long chain structure may be p-phenylbis(trimellitic acid dianhydride) (TAHQ), 4, 4'-Phenylenedioxydiphthalic anhydride (HQDA), other suitable tetracarboxylic dianhydride monomers, or any mixture of the above monomers. Accordingly, in the polyamide acid (A2) formed by the second reaction, the long-chain structure of the tetracarboxylic dianhydride monomer (a2) can effectively reduce the dielectric constant and dielectric constant of the polyamide acid (A2) Loss factor, and the rigid monomer diamine monomer (b2) can still maintain the structural rigidity of the polyamide acid (A2) segment.

須說明的是,於前述對-苯基二(偏苯三酸酯)二四羧酸二酐(TAHQ)之化學結構中,雖然其具有較長之分子鏈結構,但苯環間係藉由酯基來連結,,故TAHQ除可提升所形成之材料的結構剛硬性,其亦可降低所形成之聚醯亞胺鏈段的醯亞胺官能基密度,進而降低材料之介電常數與介電損耗因子。換言之,對-苯基二(偏苯三酸酯)二四羧酸二酐(TAHQ)兼具前述剛硬單體與柔韌單體之功效。 It should be noted that in the chemical structure of the aforementioned p-phenylbis(trimellitic acid dianhydride) (TAHQ), although it has a longer molecular chain structure, the benzene ring The ester group is connected, so TAHQ can not only improve the structural rigidity of the formed material, it can also reduce the density of the imine functional group of the formed polyimide segment, thereby reducing the dielectric constant and dielectric constant of the material. Electrical loss factor. In other words, p-phenylbis(trimellitate) tetracarboxylic dianhydride (TAHQ) has the functions of the aforementioned rigid monomer and flexible monomer.

於第二反應中,四羧酸二酐單體(a2)與二胺單體(b2)之莫耳比值較佳為0.95:1至1:1。相同地,第二反應係使用本發明所屬技術領域具有通常知識者所熟知之反應溫度與其他反應參數來進行,故在此不另贅述。經第二反應所製得之嵌段聚醯胺酸為膠態溶液。此膠態溶液之黏度為1000cps至20000cps,且較佳可為3000cps至13000cps。 In the second reaction, the molar ratio of the tetracarboxylic dianhydride monomer (a2) to the diamine monomer (b2) is preferably 0.95:1 to 1:1. Similarly, the second reaction is performed using the reaction temperature and other reaction parameters that are well known to those with ordinary knowledge in the technical field of the present invention, so no further description is given here. The block polyamic acid prepared by the second reaction is a colloidal solution. The viscosity of the colloidal solution is 1000 cps to 20000 cps, and preferably 3000 cps to 13000 cps.

基於所製得之聚醯亞胺前驅物的含量為100莫耳百分比,聚醯胺酸(A2)之含量可為10莫耳百分比至60莫耳百分比,較佳為20莫耳百分比至50莫耳百分比,且更佳為25莫耳百分比至40莫耳百分比。 Based on the prepared polyimide precursor content of 100 mol%, the content of polyamide acid (A2) can be 10 mol% to 60 mol%, preferably 20 mol% to 50 mol% Ear percentage, and more preferably 25 mol% to 40 mol%.

在一些實施例中,前述第一反應與第二反應之順序可彼此更換。換言之,先進行第二反應,以形成聚醯胺酸(A2),再對聚醯胺酸(A2)、四羧酸二酐單體(a1)與二胺單體(b1)進行第一反應,以獲得由聚醯胺酸(A2)和聚醯胺酸(A1)所組成之嵌段聚醯胺酸。須說明的是,在一些實施例中,雖然第一反應與第二反應之順序可更換,但聚醯胺酸(A1)於所製得之嵌段聚醯胺酸中的莫耳含量仍係大於聚醯胺酸(A2)之莫耳含量。 In some embodiments, the order of the aforementioned first reaction and the second reaction can be replaced with each other. In other words, the second reaction is performed first to form polyamide acid (A2), and then the first reaction is performed on polyamide acid (A2), tetracarboxylic dianhydride monomer (a1) and diamine monomer (b1) , To obtain a block polyamide composed of polyamide (A2) and polyamide (A1). It should be noted that in some embodiments, although the order of the first reaction and the second reaction can be changed, the molar content of the polyamide acid (A1) in the block polyamide acid obtained is still Greater than the molar content of polyamide (A2).

於製得嵌段聚醯胺酸後,對嵌段聚醯胺酸、四羧酸二酐單體(a3)與二胺單體(b3)進行第三反應,以獲得本發明由嵌段聚醯胺酸與第三聚醯胺酸(A3)所組成之聚醯亞胺前驅物。其中,第三聚醯胺酸(A3)係由四羧酸二酐單體(a3)與二胺單體(b3)經反應所製得。 After the block polyamide is prepared, the third reaction is performed on the block polyamide, the tetracarboxylic dianhydride monomer (a3) and the diamine monomer (b3) to obtain the block polyamide of the present invention. A polyimide precursor composed of amide acid and the third polyamide acid (A3). Among them, the third polyamide acid (A3) is prepared by reacting tetracarboxylic dianhydride monomer (a3) and diamine monomer (b3).

當進行第三反應時,為進一步降低聚醯亞胺前驅物之介電常數與介電損耗因子,二胺單體(b3)可為柔韌單體。在一些實施例中,二胺單體(b3)可包含主鏈具有醚基之二胺單體、側鏈具有烷基之二胺單體、其他適當之二胺單體,或上述單體之任意混合。在一些具體例中,柔韌單體之二胺單體(b3)可為1,4-二(4-氨基苯氧基)苯(TPE-Q)、4,4'-二氨基-2,2'-二甲基-1,1'-聯苯(m-TB-HG)、其他適當之二胺單體,或上述單體之任意混合。其次,為維持聚醯胺酸(A3)之鏈段剛硬性,四羧酸二酐單體(a3)可為剛硬單體。可理解的是,剛硬單體之四羧酸二酐單體(a3)的種類係相同於前述之四羧酸二酐單體(a1),故在此不另贅述。 When performing the third reaction, in order to further reduce the dielectric constant and the dielectric loss factor of the polyimide precursor, the diamine monomer (b3) can be a flexible monomer. In some embodiments, the diamine monomer (b3) may include a diamine monomer with an ether group in the main chain, a diamine monomer with an alkyl group in the side chain, other suitable diamine monomers, or any of the above monomers. Mix arbitrarily. In some specific examples, the diamine monomer (b3) of the flexible monomer can be 1,4-bis(4-aminophenoxy)benzene (TPE-Q), 4,4'-diamino-2,2 '-Dimethyl-1,1'-biphenyl (m-TB-HG), other suitable diamine monomers, or any mixture of the above monomers. Secondly, in order to maintain the rigidity of the polyamide acid (A3) segment, the tetracarboxylic dianhydride monomer (a3) can be a rigid monomer. It is understandable that the type of the tetracarboxylic dianhydride monomer (a3) of the rigid monomer is the same as the aforementioned tetracarboxylic dianhydride monomer (a1), so it will not be repeated here.

於第三反應中,四羧酸二酐單體(a3)與二胺單體(b3)之莫耳比值較佳為0.98:1至1:1。相同地,第三反應係使用本發明所屬技術領域具有通常知識者所熟知之反應溫度與其他反應參數來進行,故在此不另贅述。第三反應所製得之聚醯亞胺前驅物為膠態溶液(即含有溶劑與聚醯亞胺前驅物之聚合物固體)。此膠態溶液之黏度可為10000cps至50000cps,且較佳可為15000至40000。在一些實施例中,聚醯亞胺前驅物之總固含量可為10重量百分比至25重量百分比,且較佳可為14重量百分比至20重量百分比。當聚醯亞胺前驅物之黏度與總固含量為前述之範圍時,所製得之聚醯亞胺前驅物可具有較佳之成膜性與塗佈性,而有助於後端之應用需求。 In the third reaction, the molar ratio of the tetracarboxylic dianhydride monomer (a3) to the diamine monomer (b3) is preferably 0.98:1 to 1:1. Similarly, the third reaction is performed using the reaction temperature and other reaction parameters well-known to those with ordinary knowledge in the technical field to which the present invention belongs, so it will not be repeated here. The polyimide precursor prepared by the third reaction is a colloidal solution (that is, a polymer solid containing a solvent and a polyimine precursor). The viscosity of the colloidal solution can be 10,000 cps to 50,000 cps, and preferably can be 15,000 to 40,000. In some embodiments, the total solid content of the polyimide precursor may be 10 wt% to 25 wt%, and preferably may be 14 wt% to 20 wt%. When the viscosity and total solid content of the polyimide precursor are within the aforementioned ranges, the prepared polyimide precursor can have better film-forming properties and coating properties, which will help the back-end application requirements .

基於所製得之聚醯亞胺前驅物的含量為100莫耳百分比,聚醯胺酸(A3)之含量可為10莫耳百分比至30莫耳百分比,且較佳為10莫耳百分比至25莫耳百分比。 Based on the prepared polyimide precursor content of 100 mol%, the content of polyamide acid (A3) can be 10 mol% to 30 mol%, and preferably 10 mol% to 25 mol% Percentage of moles.

於所製得之聚醯胺酸(A3)中,四羧酸二酐單體(a3)可提供鏈段剛硬性,而二胺單體(b3)可降低聚醯亞胺前驅物之介電常數與介電消耗因子。其中,由於聚醯亞胺中之醯亞胺官能基主要係由四羧酸二酐單體所形成,故相較於前述之四羧酸二酐單體(a2),二胺單體(b3)對於聚醯亞胺前驅物之柔韌性的影響較大,惟四羧酸二酐單體(a2)與二胺單體(b3)之長分子結構均可有效減少製得之聚醯亞胺中醯亞胺官能基之密度,故可降低其介電常數與介電損耗因子。 In the prepared polyamide acid (A3), the tetracarboxylic dianhydride monomer (a3) can provide segment rigidity, and the diamine monomer (b3) can reduce the dielectric of the polyimide precursor Constant and dielectric dissipation factor. Among them, since the imine functional group in the polyimine is mainly formed by the tetracarboxylic dianhydride monomer, compared with the aforementioned tetracarboxylic dianhydride monomer (a2), the diamine monomer (b3 ) Has a greater impact on the flexibility of the polyimide precursor, but the long molecular structure of the tetracarboxylic dianhydride monomer (a2) and diamine monomer (b3) can effectively reduce the polyimide produced The density of the imine functional group can reduce its dielectric constant and dielectric loss factor.

據此,藉由聚醯亞胺前驅物中之聚醯胺酸(A2)與聚醯胺酸(A3)的柔韌鏈段(即四羧酸二酐單體(a2)與二胺單體(b3)之衍生基團),以及聚醯胺酸(A1)和聚醯胺酸(A2)與聚醯胺酸(A3)的剛硬鏈段(即二胺單體(b2)與四羧酸二酐單體(a3)之衍生基團),本發明之聚醯亞胺前驅物所製得的聚醯亞胺膜可具有良好之尺寸安定性與較佳之電性表現。因此,當聚醯胺酸(A1)、聚醯胺酸(A2)與聚醯胺酸(A3)之含量分別為前述之範圍時,聚醯亞胺前驅物可具有良好之尺寸安定性與較佳之高頻傳輸表現。 According to this, the flexible segments of polyamide acid (A2) and polyamide acid (A3) (ie tetracarboxylic dianhydride monomer (a2) and diamine monomer ( b3) derivative group), and the rigid segment of polyamide acid (A1), polyamide acid (A2) and polyamide acid (A3) (ie diamine monomer (b2) and tetracarboxylic acid The derivative group of dianhydride monomer (a3)), the polyimide film prepared from the polyimide precursor of the present invention can have good dimensional stability and better electrical performance. Therefore, when the contents of polyimide (A1), polyimide (A2) and polyimide (A3) are in the aforementioned ranges, respectively, the polyimide precursor can have good dimensional stability and relatively good dimensional stability. Excellent high frequency transmission performance.

於進行第三反應後,對所獲得之聚醯亞胺前驅物進行去溶劑步驟,即可獲得聚醯亞胺前驅物之聚合物固體。然後,進一步加熱固態之聚醯亞胺前驅物,即可製得聚醯亞胺。可理解的,將聚醯亞胺前驅物塗佈成膜時,經去溶 劑步驟所製得之固態聚醯亞胺前驅物即為聚醯胺酸膜,且進一步加熱後,即可製得聚醯亞胺膜。在一些具體例中,聚醯亞胺膜之厚度可為5μm至100μm。 After performing the third reaction, the obtained polyimine precursor is subjected to a solvent removal step to obtain the polymer solid of the polyimine precursor. Then, the solid polyimide precursor is further heated to obtain polyimide. It is understandable that when the polyimide precursor is coated to form a film, the The solid polyimide precursor prepared in the reagent step is the polyimide film, and after further heating, the polyimide film can be prepared. In some specific examples, the thickness of the polyimide film may be 5 μm to 100 μm.

據此,本發明之聚醯亞胺前驅物可塗佈於銅箔或其他基材上,再利用前述之去溶劑步驟與加熱步驟,即可製得具有聚醯亞胺膜之銅箔基材。接著,將銅箔蝕刻為所要求之圖案後,即可製得軟性導電基板。 Accordingly, the polyimide precursor of the present invention can be coated on copper foil or other substrates, and then the aforementioned solvent removal step and heating step can be used to prepare a copper foil substrate with a polyimide film . Then, after etching the copper foil into the required pattern, a flexible conductive substrate can be prepared.

依據前述之說明可知,本案之聚醯亞胺前驅物係由主要剛性鏈段之聚醯胺酸(A1)、具低介電損耗鏈段之聚醯胺酸(A2)與具低介電損耗與柔韌鏈段之聚醯胺酸(A3)所組成。故,所製得之聚醯亞胺前驅物為規則之嵌段共聚合物,而具有較低之電荷傳遞阻力。在一些應用例中,所製得之聚醯亞胺的介電損耗因子可為0.003至0.005,且其介電常數可為3.0至3.7。在一些例子中,聚醯亞胺的介電損耗因子較佳可為0.003至0.005,且更佳可為0.003至0.004。在一些例子中,聚醯亞胺的介電常數較佳可為3.0至3.5。 According to the above description, the polyimide precursor in this case is composed of polyimide (A1) with main rigid segment, polyimide (A2) with low dielectric loss segment and low dielectric loss It is composed of polyamide acid (A3) with flexible segment. Therefore, the prepared polyimide precursor is a regular block copolymer, and has low charge transfer resistance. In some application examples, the dielectric loss factor of the prepared polyimide can be 0.003 to 0.005, and the dielectric constant can be 3.0 to 3.7. In some examples, the dielectric loss factor of polyimide may be preferably 0.003 to 0.005, and more preferably 0.003 to 0.004. In some examples, the dielectric constant of polyimide may preferably be 3.0 to 3.5.

以下利用實施例以說明本發明之應用,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾。 The following examples are used to illustrate the application of the present invention, but they are not intended to limit the present invention. Anyone who is familiar with the art can make various changes and modifications without departing from the spirit and scope of the present invention.

製備聚醯亞胺膜Preparation of polyimide film 實施例1Example 1

首先,將0.015莫耳之4,4'-二氨基苯甲醯苯胺(DABA)加至N-甲基吡咯烷酮(NMP)中,以形成二胺單體 溶液。然後,加入0.015莫耳之均苯四甲酸二酐(PMDA),以進行第一段反應。經1至4小時後,即可製得含有聚醯胺酸(A1)之膠態溶液(黏度為40cps)。 First, 0.015 mol of 4,4'-diaminobenzidine (DABA) is added to N-methylpyrrolidone (NMP) to form the diamine monomer Solution. Then, 0.015 mol of pyromellitic dianhydride (PMDA) was added to carry out the first stage reaction. After 1 to 4 hours, a colloidal solution (with a viscosity of 40 cps) containing polyamide acid (A1) can be prepared.

接著,添加0.075莫耳之對-苯二胺(p-PDA)與0.075莫耳之對-苯基二(偏苯三酸酯)二四羧酸二酐(TAHQ)至含有聚醯胺酸(A1)之膠態溶液中,以進行第二段反應。經1至4小時後,即可製得含有嵌段聚醯胺酸之膠態溶液(黏度為19500cps)。 Next, add 0.075 mol of p-phenylenediamine (p-PDA) and 0.075 mol of p-phenylbis(trimellitic acid ester) ditetracarboxylic dianhydride (TAHQ) to contain polyamide acid ( A1) in the colloidal solution for the second stage reaction. After 1 to 4 hours, a colloidal solution containing block polyamide (viscosity 19500cps) can be prepared.

然後,添加0.010莫耳之1,4-二(4-氨基苯氧基)苯(TPE-Q)與0.010莫耳之3,3',4,4'-聯苯四甲酸二酐(s-BPDA)至含有嵌段聚醯胺酸之膠態溶液中,以進行第三段反應。經1至4小時後,即可製得含有聚醯亞胺前驅物之膠態溶液(黏度為32900cps)。基於所製得聚醯亞胺前驅物之含量為100莫耳百分比,聚醯胺酸(A1)之含量為15莫耳百分比,聚醯胺酸(A2)之含量為75莫耳百分比,且聚醯胺酸(A3)之含量為10莫耳百分比。 Then, add 0.010 mol of 1,4-bis(4-aminophenoxy)benzene (TPE-Q) and 0.010 mol of 3,3',4,4'-biphenyltetracarboxylic dianhydride (s- BPDA) into the colloidal solution containing the block polyamide acid for the third stage reaction. After 1 to 4 hours, a colloidal solution (viscosity of 32900 cps) containing the polyimide precursor can be prepared. Based on the prepared polyimide precursor content of 100 mol%, the content of polyamide acid (A1) is 15 mol%, the content of polyamide acid (A2) is 75 mol%, and The content of amide acid (A3) is 10 mole percent.

將含有聚醯亞胺前驅物之膠態溶液塗佈成膜,並經去溶劑步驟,以形成固態之聚醯亞胺前驅物膜。接著,進一步加熱聚醯亞胺前驅物膜,以進行醯亞胺化反應,而可製得實施例1之聚醯亞胺膜。所製得之聚醯亞胺膜以下述介電常數與介電損耗因子之評價方式進行評價,其結果如第1表所示,在此不另贅述。 The colloidal solution containing the polyimide precursor is coated to form a film, and the solvent is removed to form a solid polyimide precursor film. Then, the polyimide precursor film is further heated to perform the imidization reaction, and the polyimide film of Example 1 can be prepared. The obtained polyimide film was evaluated by the following evaluation methods of dielectric constant and dielectric loss factor, and the results are shown in Table 1, which will not be repeated here.

實施例2Example 2

實施例2之聚醯亞胺膜係使用與實施例1之聚醯亞胺膜的製作方法相同之流程步驟,不同之處在於實施例2至實施例3係使用不同種類與使用量之四羧酸二酐單體與二胺單體。其配方與評價結果如第1表所示。 The polyimide film of Example 2 uses the same process steps as the production method of the polyimide film of Example 1, except that Examples 2 to 3 use different types and usage amounts of tetracarboxylic acid. Acid dianhydride monomer and diamine monomer. The formula and evaluation results are shown in Table 1.

比較例1Comparative example 1

首先,將0.025莫耳之4,4'-二氨基苯甲醯苯胺(DABA)、0.015莫耳之1,4-二(4-氨基苯氧基)苯(TPE-Q)與0.06莫耳之對-苯二胺(p-PDA)添加至N-甲基吡咯烷酮中,以形成二胺單體溶液。然後,將0.025莫耳之3,3',4,4'-二苯甲酮四甲酸二酐(BTDA)與0.075莫耳之3,3',4,4'-聯苯四甲酸二酐(s-BPDA)加至二胺單體溶液中,以進行聚合反應。經1至4小時後,即可獲得含有聚醯亞胺前驅物之膠態溶液。 First, mix 0.025 mol of 4,4'-diaminobenzylaniline (DABA), 0.015 mol of 1,4-bis(4-aminophenoxy)benzene (TPE-Q) and 0.06 mol of 1,4-bis(4-aminophenoxy)benzene (TPE-Q). P-phenylenediamine (p-PDA) is added to N-methylpyrrolidone to form a diamine monomer solution. Then, 0.025 mol of 3,3',4,4'-benzophenone tetracarboxylic dianhydride (BTDA) and 0.075 mol of 3,3',4,4'-biphenyltetracarboxylic dianhydride ( s-BPDA) was added to the diamine monomer solution for polymerization. After 1 to 4 hours, a colloidal solution containing polyimine precursor can be obtained.

接著,將含有聚醯亞胺前驅物之膠態溶液塗佈成膜,並經去溶劑步驟,以形成固態之聚醯亞胺前驅物膜。接著,進一步加熱聚醯亞胺前驅物膜,以進行醯亞胺化反應,而可製得比較例1之聚醯亞胺膜。所製得之聚醯亞胺膜以下述介電常數與介電損耗因子之評價方式進行評價,其結果如第1表所示,在此不另贅述。 Then, the colloidal solution containing the polyimide precursor is coated to form a film, and the solvent is removed to form a solid polyimide precursor film. Then, the polyimide precursor film is further heated to perform the imidization reaction, and the polyimide film of Comparative Example 1 can be prepared. The obtained polyimide film was evaluated by the following evaluation methods of dielectric constant and dielectric loss factor, and the results are shown in Table 1, which will not be repeated here.

比較例2Comparative example 2

比較例2之聚醯亞胺膜係使用與比較例1之聚醯亞胺膜的製作方法相同之流程步驟,不同之處在於:比較例2所使用之二胺單體為0.075莫耳之對-苯二胺(p-PDA)與0.025莫耳之1,4-二(4-氨基苯氧基)苯(TPE-Q),且四羧 酸二酐單體為0.10莫耳之3,3',4,4'-聯苯四甲酸二酐(s-BPDA),其配方與所製得聚醯亞胺膜的評價結果如第1表所示。 The polyimide film of Comparative Example 2 uses the same process steps as the preparation method of the polyimide film of Comparative Example 1, except that the diamine monomer used in Comparative Example 2 is a 0.075 mol pair -Phenylenediamine (p-PDA) and 0.025 mol of 1,4-bis(4-aminophenoxy)benzene (TPE-Q), and tetracarboxylic acid The acid dianhydride monomer is 0.10 mol of 3,3',4,4'-biphenyltetracarboxylic dianhydride (s-BPDA). The formula and the evaluation results of the polyimide film are shown in Table 1. Shown.

比較例3與比較例4Comparative example 3 and comparative example 4

比較例3與比較例4之聚醯亞胺膜係使用與實施例1之聚醯亞胺膜的製作方法相同之流程步驟,不同之處在於比較例3與比較例4係使用不同種類與使用量之四羧酸二酐單體與二胺單體。其配方與評價結果如第1表所示。 The polyimide film of Comparative Example 3 and Comparative Example 4 uses the same process steps as the production method of the polyimide film of Example 1, except that Comparative Example 3 and Comparative Example 4 use different types and uses The amount of tetracarboxylic dianhydride monomer and diamine monomer. The formula and evaluation results are shown in Table 1.

介電常數與介電損耗因子Dielectric constant and dielectric loss factor

首先,以酒精擦拭實施例1至實施例3與比較例1至比較例4所製得之聚醯亞胺膜,再將聚醯亞胺膜放置於150℃之烘箱中。經烘烤30分鐘後,放置於室溫環境(溫度為21℃至25℃,且相對溼度為45%至55%)中。經24小時後,以網路分析儀(ROHDE & SCHWARZ公司製造,且型號為ZNB-20)量測聚醯亞胺膜之介電常數與介電損耗因子。 First, wipe the polyimide film prepared in Example 1 to Example 3 and Comparative Example 1 to Comparative Example 4 with alcohol, and then place the polyimide film in an oven at 150°C. After being baked for 30 minutes, it is placed in a room temperature environment (temperature is 21°C to 25°C, and relative humidity is 45% to 55%). After 24 hours, a network analyzer (manufactured by ROHDE & SCHWARZ and model ZNB-20) was used to measure the dielectric constant and dielectric loss factor of the polyimide film.

Figure 108146512-A0101-12-0016-5
Figure 108146512-A0101-12-0016-5

於第1表中,PMDA代表均苯四甲酸二酐(Pyromellitic dianhydride);DABA代表4,4'-二氨基苯甲醯苯胺(4,4'-diaminobenzanilide):p-PDA代表對-苯二胺(1,4-phenylenediamine);TPE-Q代表1,4-二(4-氨基苯氧基)苯(1,4-bis(4-aminophenoxy)benzene);m-TB-HG代表4,4'-二氨基-2,2'-二甲基-1,1'-聯苯(2,2'-dimethylbenzidine);BTDA代表3,3',4,4'-二苯甲酮四甲酸二酐(3,3',4,4'-benzophenonetetracarboxylic dianhydride);s-BPDA代表3,3',4,4'-聯苯四甲酸二酐(3,3',4,4'-biphenyltetracarboxylic dianhydride);TAHQ代表對-苯基二(偏苯三酸酯)二四羧酸二酐(p-phenylene bis(trimellitate)dianhydride);HQDA代 表4,4'-對苯二氧雙鄰苯二甲酸酐(1,4-Bis(3,4-dicarboxyphenoxy)benzene dianhydride)。 In Table 1, PMDA representative of pyromellitic dianhydride (Pyromellitic dianhydride); DABA representative of 4,4'-diamino benzoyl aniline (4,4 '-diaminobenzanilide): p- PDA representative - phenylenediamine (1,4-phenylenediamine); TPE-Q stands for 1,4-bis(4-aminophenoxy)benzene (1,4-bis(4-aminophenoxy)benzene); m-TB-HG stands for 4,4'-Diamino-2,2'-dimethyl-1,1'-biphenyl(2,2'-dimethylbenzidine); BTDA stands for 3,3',4,4'-benzophenonetetracarboxylic dianhydride ( 3,3',4,4'-benzophenonetetracarboxylic dianhydride); s-BPDA stands for 3,3',4,4'-biphenyltetracarboxylic dianhydride (3,3 ' ,4,4 ' -biphenyltetracarboxylic dianhydride); TAHQ Represents p-phenylene bis(trimellitate)dianhydride; HQDA represents 4,4'-terephthalic acid anhydride (1, 4-Bis(3,4-dicarboxyphenoxy)benzene dianhydride).

依據第1表之內容可知,藉由本發明前述之聚醯亞胺前驅物的製作方法,實施例1至實施例3所製得之聚醯亞胺膜可具有較低之介電損耗因子(Df)與介電常數(Dk)。其中,當長分子鏈段之聚醯胺酸(由剛硬二胺單體與剛硬四羧酸二酐單體反應所得)的含量最多時,所製得之聚醯亞胺膜(即實施例2)具有更低之介電損耗因子與介電常數。 According to the content in Table 1, the polyimide film prepared in Examples 1 to 3 can have a lower dielectric loss factor (Df ) And dielectric constant (Dk). Among them, when the long molecular chain polyamide acid (resulting from the reaction of rigid diamine monomer and rigid tetracarboxylic dianhydride monomer) has the largest content, the prepared polyimide film (that is, the implementation Example 2) has a lower dielectric loss factor and dielectric constant.

於比較例1與比較例2中,當聚醯胺酸前驅物並非藉由如本案所述之分段反應來形成時,所製得之聚醯亞胺膜具有較差之電性表現。於比較例3中,雖然其聚醯胺酸前驅物係以兩段反應來製得,但因所製得之聚醯亞胺前驅物缺乏如本案所述之聚醯胺酸(A2),故所製得之聚醯亞胺膜仍具有較差之電性表現。 In Comparative Example 1 and Comparative Example 2, when the polyimide precursor is not formed by the stepwise reaction as described in this case, the obtained polyimide film has poor electrical performance. In Comparative Example 3, although the polyimide precursor was prepared by a two-stage reaction, the prepared polyimide precursor lacks the polyimide (A2) as described in this case, so The prepared polyimide film still has poor electrical performance.

據此,本發明之聚醯亞胺前驅物的製作方法係藉由分次反應,並選用特定之四羧酸二酐單體與二胺單體,來形成規則排列之嵌段共聚物,而可降低介電損失,進而減少後續銅箔線路的能量損失。其中,聚醯亞胺前驅物係由主要剛性鏈段之聚醯胺酸(A1)、具低介電損耗鏈段之聚醯胺酸(A2)與具低介電損耗與柔韌鏈段之聚醯胺酸(A3)所組成。故,所形成之聚醯亞胺具有良好之尺寸安定性與較低之介電常數和介電損耗因子,而可降低訊號傳遞之訊號損失,故可滿足高頻傳輸之應用需求。 Accordingly, the preparation method of the polyimide precursor of the present invention is to form a regularly arranged block copolymer by reacting in stages and selecting specific tetracarboxylic dianhydride monomers and diamine monomers, and It can reduce the dielectric loss, thereby reducing the energy loss of the subsequent copper foil circuit. Among them, the polyimide precursor is composed of polyamide acid (A1) with a main rigid segment, polyamide acid (A2) with a low dielectric loss segment, and a polyamide with a low dielectric loss and flexible segment. It is composed of amide acid (A3). Therefore, the formed polyimide has good dimensional stability, low dielectric constant and dielectric loss factor, and can reduce the signal loss of signal transmission, so it can meet the application requirements of high-frequency transmission.

雖然本發明已以實施方式揭露如上,然其並非用以限定本發明,在本發明所屬技術領域中任何具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field of the present invention can make various changes and modifications without departing from the spirit and scope of the present invention. Retouching, therefore, the scope of protection of the present invention shall be subject to the scope of the attached patent application.

Claims (9)

一種聚醯亞胺前驅物的製作方法,包含: A preparation method of a polyimide precursor, comprising: 對一第一四羧酸二酐單體與一第一二胺單體進行一第一反應,以形成一第一聚醯胺酸; Performing a first reaction on a first tetracarboxylic dianhydride monomer and a first diamine monomer to form a first polyamide acid; 對該第一聚醯胺酸、一第二四羧酸二酐單體與一第二二胺單體進行一第二反應,以形成一嵌段聚醯胺酸,其中該嵌段聚醯胺酸係由該第一聚醯胺酸與一第二聚醯胺酸所組成,且該第二聚醯胺酸係由該第二四羧酸二酐單體與該第二二胺單體所形成;以及 A second reaction is performed on the first polyamide acid, a second tetracarboxylic dianhydride monomer, and a second diamine monomer to form a block polyamide acid, wherein the block polyamide The acid is composed of the first polyamide and a second polyamide, and the second polyamide is composed of the second tetracarboxylic dianhydride monomer and the second diamine monomer. Formed; and 對該嵌段聚醯胺酸、一第三四羧酸二酐單體與一第三二胺單體進行一第三反應,以形成該聚醯亞胺前驅物,其中該聚醯亞胺前驅物係由該嵌段聚醯胺酸與一第三聚醯胺酸所組成,且該第三聚醯胺酸係由該第三四羧酸二酐單體與該第三二胺單體所形成,且 A third reaction is performed on the block polyamide acid, a third tetracarboxylic dianhydride monomer, and a third diamine monomer to form the polyimide precursor, wherein the polyimide precursor The material system is composed of the block polyamide and a third polyamide, and the third polyamide is composed of the third tetracarboxylic dianhydride monomer and the third diamine monomer. Formed, and 其中該第一四羧酸二酐單體或該第二四羧酸二酐單體之一者為主鏈具有醚基之四羧酸二酐單體;且 Wherein one of the first tetracarboxylic dianhydride monomer or the second tetracarboxylic dianhydride monomer is a tetracarboxylic dianhydride monomer having an ether group in the main chain; and 該第三二胺單體為主鏈具有醚基之二胺單體或側鏈具有烷基之二胺單體。 The third diamine monomer has a diamine monomer having an ether group in the main chain or a diamine monomer having an alkyl group in the side chain. 如申請專利範圍第1項所述之聚醯亞胺前驅物的製作方法,其中基於該聚醯亞胺前驅物之一含量為100莫耳百分比,該第三聚醯胺酸之一含量為10莫耳百分比至30莫耳百分比。 As described in the first item of the scope of patent application, the preparation method of the polyimide precursor, wherein based on the content of one of the polyimine precursors is 100 mole percent, the content of one of the third polyimine is 10%. Mole percent to 30 mole percent. 如申請專利範圍第2項所述之聚醯亞胺前驅物的製作方法,其中基於該聚醯亞胺前驅物之該含量為100莫耳百分比,該第一四羧酸二酐單體或該第二四羧酸二酐單體之該者所形成之該第一聚醯胺酸或該第二聚醯胺酸之一含量為10莫耳百分比至60莫耳百分比。 The method for preparing polyimine precursor as described in item 2 of the scope of patent application, wherein based on the content of the polyimine precursor being 100 mole percent, the first tetracarboxylic dianhydride monomer or the The content of one of the first polyamide or the second polyamide formed by the one of the second tetracarboxylic dianhydride monomer is 10 mol% to 60 mol%. 如申請專利範圍第3項所述之聚醯亞胺前驅物的製作方法,其中基於該聚醯亞胺前驅物之該含量為100莫耳百分比,該第一四羧酸二酐單體或該第二四羧酸二酐單體之另一者所形成之該第一聚醯胺酸或該第二聚醯胺酸之一含量為20莫耳百分比至75莫耳百分比。 The method for preparing the polyimine precursor as described in item 3 of the scope of the patent application, wherein based on the content of the polyimine precursor being 100 mole percent, the first tetracarboxylic dianhydride monomer or the The content of one of the first polyamide or the second polyamide formed by the other of the second tetracarboxylic dianhydride monomers is 20 mol% to 75 mol%. 如申請專利範圍第1項所述之聚醯亞胺前驅物的製作方法,其中該第一二胺單體與該第二二胺單體不為主鏈具有醚基之二胺單體或側鏈具有烷基之二胺單體。 The method for preparing the polyimide precursor as described in item 1 of the scope of patent application, wherein the first diamine monomer and the second diamine monomer are not diamine monomers with ether groups in the main chain or side diamine monomers. A diamine monomer with an alkyl group in the chain. 如申請專利範圍第1項所述之聚醯亞胺前驅物的製作方法,其中該第三四羧酸二酐單體不為主鏈具有醚基之四羧酸二酐單體。 According to the method for preparing the polyimide precursor described in item 1 of the scope of the patent application, the third tetracarboxylic dianhydride monomer is not a tetracarboxylic dianhydride monomer having an ether group in the main chain. 如申請專利範圍第1項所述之聚醯亞胺前驅物的製作方法,其中該聚醯亞胺前驅物之一總固含量為10重量百分比至25重量百分比。 According to the manufacturing method of the polyimine precursor described in item 1 of the scope of patent application, the total solid content of one of the polyimine precursors is 10 weight percent to 25 weight percent. 一種聚醯亞胺,藉由加熱一聚醯亞胺前驅物所形成,且該聚醯亞胺前驅物係利用如申請專利範圍第1至7項中之任一項所述之製作方法所製得,其中該聚醯亞胺之每一分子鏈係由一第一聚醯胺酸、一第二聚醯胺酸與一第三聚醯胺酸所組成。 A polyimide formed by heating a polyimine precursor, and the polyimine precursor is prepared by the manufacturing method described in any one of items 1 to 7 in the scope of the patent application Thus, each molecular chain of the polyimide is composed of a first polyamide, a second polyamide, and a third polyamide. 如申請專利範圍第8項所述之聚醯亞胺,其中該聚醯亞胺之一介電損耗因子為0.003至0.005且一介電常數為3.0至3.7。 The polyimide described in item 8 of the scope of patent application, wherein the polyimide has a dielectric loss factor of 0.003 to 0.005 and a dielectric constant of 3.0 to 3.7.
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