TW202124256A - Production method for a micromechanical system, and micromechanical system - Google Patents

Abstract

The invention relates to a production method for a micromechanical system and to a micromechanical system. The method comprises the following steps: application of a first micromechanical functional layer (F1) to a substrate (S); formation of a plurality of two- dimensionally arranged, mutually spaced elongate etched trenches (K2, K3) in a first anisotropic etching step in a first region (B1) of the first micromechanical functional layer (F1), wherein the etched trenches (K2, K3) are spaced apart at one or both longitudinal ends from an adjacent etched trench (K2, K3) by means of a respective interruption region (U1, U2) formed by the first micromechanical functional layer (F1), down to a first etching depth, which is less than a thickness of the first micromechanical functional layer (F1); and extension of the etched trenches (K2, K3) in a subsequent isotropic etching step down to a second etching depth, which is greater than the first etching depth and less than the thickness of the first micromechanical functional layer (F1), wherein the etched trenches (K2, K3) within the first micromechanical functional layer (F1) are widened, and the interruption regions (U1, U2) are undercut in such a way that the adjacent etched trenches (K2, K3) within the first micromechanical functional layer (F1) are interconnected below the interruption regions (U1, U2), and wherein the interruption regions (U1, U2) on the upper side of the first micromechanical functional layer (F1) are retained.

Description

Manufacturing method of micromechanical system and micromechanical system

The invention relates to a manufacturing method for a micromechanical system, and also relates to a micromechanical system.

Although the present invention can be applied to any micromechanical system, the present invention and the background behind it are related to micromechanical pressure sensors in silicon technology.

DE 10 2011 080 978 A1 discloses a method for manufacturing a micromechanical structure, by means of which a microelectromechanical system (MEMS) functional layer can be constructed in a configurationless manner. This method is usually used to configure a plurality of MEMS functional layers one on top of the other. In this case, a cavity is formed in the area where the MEMS functional layer is removed during the processing. Such cavities can be intentionally used as an etching channel, for example, to locally accelerate the etching of the sacrificial layer, which is often used in the MEMS manufacturing process, and thereby locally modify the undercut in a controlled manner.

Among them, these etching channels can be used, and these etching channels are also necessary methods for the operation of the device, such as a capacitive pressure sensor.

8a and 8b show an example of a micromechanical system in the form of a capacitive micromechanical pressure sensor to explain the basic problem of the present invention.

In FIG. 8a, reference symbol S denotes a substrate such as a silicon substrate, on which a first insulating layer I1 and a second insulating layer I2 located above the first insulating layer are applied. As an example, the first insulating layer I1 is made of silicon oxide, and the second insulating layer I2 is made of silicon nitride.

A thin conductive track layer L made of, for example, polysilicon is applied to the second insulating layer I2, and the thin conductive track layer is constructed in such a way that it forms the first electrode E1.

The first micromechanical function layer F1 made of polysilicon and the second micromechanical function layer F2 made of polysilicon are applied on the conductive track layer L and structured. In detail, the diaphragm area M across the cavity K is formed by the second micromechanical functional layer F2.

There is a functional element 1 on the underside of the membrane, which consists of a first micromechanical functional layer F1. On the one hand, this functional element 1 serves as a reinforcing element for the diaphragm M, and on the other hand, it serves as the opposite electrode of the second electrode E2 or the electrode E1, and in its function during the manufacturing process, in addition to accelerate the sacrificial layer must be The sacrificial layer in the removed area is etched. In detail, this sacrificial layer (not shown) is located in the area between the first electrode E1 and the second electrode E2.

In order to accelerate the etching process of the sacrificial layer, etching channels extending parallel to the plane of the pattern in a direction parallel to each other are provided on the lower side of the functional element 1.

In this context, Fig. 8a shows the cross-sectional plane of the strengthened area, and Fig. 8b shows the plane of the etched channel. The strengthened area can therefore only produce a strengthening effect in one direction and not in the direction perpendicular to it. In addition, it is not possible to interconnect the etched channels through the functional element 1, because if the etched channels through the functional element are interconnected, the strengthening characteristics will be impaired.

The present invention provides a manufacturing method for a micromechanical system with the features of claim 1, and a micromechanical system with the features of claim 13.

The basic concept of the present invention is to use at least a two-stage etching method to produce an etched trench structure in which all etched trenches are fluidly interconnected, wherein the two-dimensional mechanical reinforcement is bridged by these etched trenches. The interruption area is realized, and these bridge-like interruption areas are formed by the micromechanical function layer. In detail, this type of etched trench structure can be achieved by combining the first anisotropic etching step and the subsequent isotropic etching step, wherein the isotropic etching step causes undercutting of the interrupted area, resulting in the micromechanical The etched trenches in the functional layer are interconnected in the undercut area, wherein the mechanically stable interruption area remains on the upper side of the micromechanical functional layer. The manufacturing method according to the present invention can also be scaled up for a thicker functional layer without any restriction on the thickness of the functional layer.

Such a micromechanical system with a two-dimensional etched trench structure can be used as, for example, an etching channel system for guiding the etching fluid in the sacrificial layer etching step, but is not limited thereto. The use in microfluidic systems or other micromechanical systems can also be envisaged.

The features presented in the appendix of the scope of patent application are favorable developments and improvements related to the subject of the present invention.

According to a preferred development, the etched trenches have a first plurality of first etched trenches and a second plurality of second etched trenches, wherein the interrupted regions have a first plurality of first interrupted regions and a second plurality of interrupted regions A second interrupt area. In the first anisotropic etching step and the subsequent isotropic etching step, a first plurality of first etched trenches extending in a first longitudinal direction and a second plurality of second etched grooves extending in a second longitudinal direction are formed After etching the trench. In each case where the first etched trenches and the second etched trenches are alternately arranged in the first longitudinal direction and the second etched trenches are arranged in rows in the second longitudinal direction, the first An interrupted area is provided between the first and second etched trenches in the first longitudinal direction in each case, and the second interrupted areas are provided in the second longitudinal direction in each case Between these second etched trenches.

According to another preferred development, the first longitudinal direction is arranged substantially perpendicular to the second longitudinal direction. In this way, it is possible to form an etched trench structure with a rectangular pattern.

According to another preferred development, the first sacrificial layer is applied to the substrate before the first micromechanical function layer is applied, and after the isotropic etching step, the etched trenches are removed in the second isotropic etching step. Etch down to a third etching depth, the etching depth extends to the entire depth of the first micromechanical function layer, and the etched trenches expose the first sacrificial layer, wherein the interrupted areas remain in the first micromechanical function On the upper side of the layer, and wherein other interrupted regions aligned with respect to the interrupted regions in the depth direction of the first micromechanical function layer are formed on the lower side of the first micromechanical function layer. In particular, when the third anisotropic etching step is used, the manufacturing method according to the present invention is particularly suitable for the thin sacrificial layer under the micromechanical functional layer to generate a particularly high capacitance between the functional layer and the bottom layer.

According to another preferred development, other etched trenches are formed on the periphery of the first region by the first and second anisotropic etching steps and the isotropic etching step.

According to another preferred development, the other etched trenches have a third plurality of etched trenches, and the third plurality of etched trenches have a closed loop shape surrounding the first area. In this way, a defined free-floating first area of the first micromechanical functional layer can be formed.

According to another preferred development, a second sacrificial layer is formed, which closes these etched trenches and these other etched trenches on the upper side and conceals them inside, wherein individual cavities remain in these etched trenches. In the widened area of the groove. Such cavities accelerate the subsequent etching steps of the sacrificial layer.

According to another preferred development, the first vias are formed in the second sacrificial layer at the periphery of the first area, and these vias expose a certain area or certain areas underlying the first mechanical function layer.

According to another preferred development, the first mechanical function layer under the first vias is removed in a certain area or certain areas in another isotropic etching step, wherein the second sacrificial layer serves as an etch stop layer. In this way, the defined area of the first micromechanical function layer can be removed.

According to another preferred development, a third sacrificial layer that closes the first path is formed.

According to another preferred development, one or more second passages exposing a certain area or certain areas of the underlying first mechanical function layer are formed in the first area, wherein the second passages are formed and configured to connect to The second micromechanical function layer of the first micromechanical function layer. In this way, a member that suspends the first micromechanical function layer on the second micromechanical function layer can be formed.

According to another preferred development, the first sacrificial layer, the second sacrificial layer, and the third sacrificial layer are removed by a sacrificial layer etching step using these etched trenches and/or these other etched trenches as etching channels. The etching channel does not impose any restriction on the mechanical properties of the first micromechanical functional layer. In detail, the continuous interconnection through the etched trench does not cause any mechanical separation of the micromechanical functional layer. When the etched trench is used as an etching channel with a relatively large diameter, it is also possible to use a liquid medium etching method that was previously impossible. Many etching methods based on liquid media are significantly cheaper and often have higher or better selectivity relative to the etch stop layer.

In the drawings, the same reference signs indicate the same or functionally same elements.

Figures 1a to 7c show the continuous processing stages of a specific example of the manufacturing method of the micromechanical system according to the present invention; Figures 1a, 2a, 3a, 4a, 5a, 6a and 7a are in each In the case of a top view, Figure 1b, Figure 2b, Figure 3b, Figure 4b, Figure 5b, Figure 6b and Figure 7b show along the lines in Figure 1a, Figure 2a, Figure 3a, Figure 4a, Figure 5a, Figure 6a and Figure 7a The section of the line AA', and Figure 1c, Figure 2c, Figure 3c, Figure 4c, Figure 5c, Figure 6c and Figure 7c show along Figure 1a, Figure 2a, Figure 3a, Figure 4a, Figure 5a, Figure 6a and The section of line BB' in Figure 7a.

In FIGS. 1a to 1c, reference symbol S denotes a substrate, for example, a silicon substrate. As an option (not shown), various functional and/or insulating layers can be grown and constructed on the substrate S in the preliminary manufacturing process (see FIGS. 8a and 8b).

The first sacrificial layer O is grown and structured on a substrate S formed of, for example, silicon oxide. The first sacrificial layer O may be further configured to create a substrate contact or plane in contact with one of the optional functional layers. In this example, the first micromechanical function layer F1 made of conductive doped polysilicon or a similar conductive material is formed on the first sacrificial layer O.

Thereafter, in the first anisotropic etching step, a plurality of two-dimensionally arranged and spaced-apart narrow and long etched trenches K2, K3 are formed in the first region B1 of the first micromechanical function layer F1.

The etched trenches K2, K3 are separated from the adjacent etched trenches K2, K3 at one or two longitudinal ends by means of respective interrupted regions U1, U2 formed by the first micromechanical functional layer F1.

The first anisotropic etching step is performed down to a first etching depth smaller than the thickness of the first micromechanical function layer F1, and this step is performed using a plasma method _{using, for example, SF 6 (sulfur hexafluoride).} In the final stage of the first anisotropic etching step, a passivation layer may be deposited on the sidewalls of the etched trenches K2, K3.

In the subsequent isotropic etching step, for example _{, the plasma method using SF 6} (sulfur hexafluoride) is also used to extend the etched trenches K2 and K3 down to the second etching depth, which is greater than the second etching depth. An etching depth is smaller than the thickness of the first micromechanical function layer F1. The isotropic etching step is controlled in such a way that the transverse undercut in this step corresponds to at least half of the width of the interrupted regions U1 and U2.

In this case, the etched grooves K2, K3 in the first micromechanical function layer F1 are widened, and the interrupted regions U1, U2 are adjusted to make the adjacent etched grooves in the first micromechanical function layer F1 The grooves K2 and K3 are undercut by widening and interconnecting under the interrupted regions U1 and U2, wherein the interrupted regions U1 and U2 are kept on the upper side of the first micromechanical function layer F1 and form a mechanical stabilizer of the structure Or reinforcement.

In this example, the etched trenches K2, K3 have a first plurality of first etched trenches K2 and a second plurality of second etched trenches K3, and these interrupted regions U1, U2 have a first plurality of An interrupt area U1 and a second plurality of second interrupt areas U2.

In the first anisotropic etching step and the subsequent isotropic etching step, a first plurality of first etched trenches K2 extending in the first longitudinal direction x and a second plurality of second etched trenches extending in the second longitudinal direction y are formed A second etched trench K3.

In each case, the first etched trenches K2 and the second etched trenches K3 are alternately arranged in the first longitudinal direction x, wherein these second etched trenches K3 are aligned in the second longitudinal direction y地Configuration.

These first interruption regions U1 are arranged between the first etched trench K2 and the second etched trench K3 in the first longitudinal direction x in each case, wherein the second interruption regions U2 are in each case It is arranged between these second etched trenches K3 in the second longitudinal direction y.

In this example, the first longitudinal direction x is configured to be substantially perpendicular to the second longitudinal direction y.

In addition, for example, through the first and second anisotropic etching steps and the isotropic etching step, other etched trenches K0, K1, K1' are formed on the periphery of the first region B1, wherein these other etched trenches K0, K1, K1' have a third plurality of etched trenches K1, K1', the third plurality of etched trenches form a closed loop shape around the first region B1 after two etching steps and are connected to the first etched trench K2 and the second etching trench K3.

Therefore, according to FIGS. 1a to 1c, a micromechanical system with a mechanically stable etched trench structure interconnected in the region B1 is available, for which there are many different possible uses.

In this example, according to FIGS. 2a to 2c, the isotropic etching step is followed by the second anisotropic etching step, in which, for example _{, the plasma method using SF 6} (sulfur hexafluoride) is also used to etch these trenches K0, K1, K1', K2, K3 are etched down to the third etching depth, which extends to the entire depth of the first micromechanical functional layer F1, which may be in these etched trenches K0, K1, K1' There is an additional passivation layer in the upper region of K2, K3.

The etched trenches K0, K1, K1', K2, K3 then expose the first sacrificial layer O, wherein these interrupted regions U1, U2 remain on the upper side of the first micromechanical function layer F1, and in which the first micromechanical function Other interruption regions U3 aligned with the interruption regions U1 and U2 in the depth direction of the layer F1 are formed on the lower side of the first micromechanical function layer F1.

In addition, referring to FIGS. 3a to 3c, a second sacrificial layer O'made of silicon oxide is formed. The second sacrificial layer closes the first etched trench K2, the second etched trench K3, and other etched trenches on the upper side. The grooves K0, K1, K1' are hidden inside, and the cavity HZ that can be used as an etching channel in the subsequent sacrificial layer etching method is maintained in the etched grooves K0, K1, K1', K2, K3 In a wide area.

In addition, referring to FIGS. 4a to 4c, the first vias D are formed in the second sacrificial layer O'at the periphery of the first region B1, and these vias expose a region or some regions underlying the first mechanical function layer F1.

In another isotropic etching step, the first mechanical function layer F1 located under the first via D is removed in a certain area or certain areas, wherein the second sacrificial layer O'acts as an etching stop layer in the lateral direction And the first sacrificial layer O serves as an etching stop layer in the vertical direction.

According to FIGS. 5a to 5c, a third sacrificial layer O" made of silicon oxide that closes the first via D is formed.

One or more second passages D′ are formed in the first area B1 that expose one or some areas of the underlying first mechanical function layer F1.

Next, the second micromechanical function layer F2 made of polysilicon as shown in FIGS. 6a to 6c is formed and constructed, and the second micromechanical function layer is connected to the first micromechanical function layer F1 in the second via D2.

According to other optional steps, according to FIGS. 7a to 7c, the first etched trench K2 and the second etched trench K3 and the other etched trenches K0, K1, K1' are used as etching channels. The sacrificial layer etching step is used To remove the first sacrificial layer O, the second sacrificial layer O', and the third sacrificial layer O".

During the sacrificial layer etching step, compared to the solid sacrificial layer material, the etching front ends are in the cavities of the first etched trench K2 and the second etched trench K3 and other etched trenches K0, K1, K1' Spread faster in HR. In the sacrificial layer etching step, an etching method using liquid HF (hydrogen fluoride) or a solution containing HF is preferably used.

Other optional steps can be followed. For example, the cavity formed by the sacrificial layer etching step can be hermetically sealed.

When a micromechanical system is used in a pressure sensor, the area of the second micromechanical functional layer F2 will be the diaphragm, and the area B1 of the first micromechanical functional layer F1 will be the functional element 1'(see Figures 8a, 8b) As shown in Figure 7b, the functional element acts as an electrode and a strengthening element. A particularly advantageous situation is that here the reinforcement acts in two dimensions (that is, in the x and y longitudinal directions).

Although the invention has been described above with the aid of preferred illustrative specific examples, it is not limited thereto and can be modified in many different ways.

In detail, the present invention is not limited to the layer materials mentioned by way of example. In addition, the present invention is not only suitable for the pressure sensor mentioned by way of example, but in principle is also suitable for all micromechanical sensors or actuators, especially the two suspended above the substrate in a mechanically connected but electrically isolated manner. A micromechanical sensor or actuator in a conductive functional area.

In a variant, for example, the first anisotropic etching step can also be divided into two etching operations in two different areas by means of a resist mask. In the first area, anisotropic etching does not occur over the entire depth of the functional layer. In the second area, etching occurs over the entire depth of the functional layer. In subsequent steps, no transverse undercuts appear in the second area. This behavior can be used to define areas where etching occurs more slowly or where vertical trenches are required to generate capacitive drive or detection structures or extremely accurately defined elastic areas, for example.

The concept according to the present invention also provides new design freedom for encapsulating acceleration sensors or rotation rate sensors or resonators. In principle, this makes it possible to use new sealing methods that only allow a few openings, such as laser resealing methods. So far, in a very large number of process steps, it is necessary to provide a very large number of dense distributed etching channels for the sacrificial layer etching, and these channels are difficult to seal due to the large number of channels.

1,1': functional element A-A': line B-B': line B1: The first area D: The first path D': second path E1: first electrode E2: second electrode HR, K: cavity I1: first insulating layer I2: second insulating layer K0, K1, K1': other etched grooves K2: The first etched groove K3: The second etched groove L: Conductive rail layer M: Diaphragm F1: The first micromechanical functional layer F2: The second micromechanical function layer O: The first sacrificial layer O': Second sacrifice layer O'': Third sacrifice layer S: substrate U1: The first interrupt area U2: second interrupt area U3: Other interrupt area x: first longitudinal direction y: second longitudinal direction

In the following, other features and advantages of the present invention are explained with reference to the drawings.

[Figures 1a to 7c] show the continuous processing stages of a specific example of the manufacturing method for micromechanical systems according to the present invention; Figures 1a, 2a, 3a, 4a, 5a, 6a and 7a are in In each case, a top view is shown, Figure 1b, Figure 2b, Figure 3b, Figure 4b, Figure 5b, Figure 6b, and Figure 7b show along Figure 1a, Figure 2a, Figure 3a, Figure 4a, Figure 5a, Figure 6a and Figure 7a The section of the line AA' in Figure 1c, Figure 2c, Figure 3c, Figure 4c, Figure 5c, Figure 6c and Figure 7c show along Figure 1a, Figure 2a, Figure 3a, Figure 4a, Figure 5a, Figure 6a and the cross section of line BB' in Fig. 7a.

[Figures 8a and 8b] show examples of micromechanical systems in the form of capacitive micromechanical pressure sensors to explain the basic problem of the present invention.

A-A': line

B-B': line

B1: The first area

F1: The first micromechanical functional layer

K0, K1, K1': other etched grooves

K2: The first etched groove

K3: The second etched groove

U1: The first interrupt area

U2: second interrupt area

x: first longitudinal direction

y: second longitudinal direction

Claims (15)

A manufacturing method for a micromechanical system, which includes the following steps: Applying the first micromechanical functional layer (F1) to the substrate (S); In the first anisotropic etching step, in the first region (B1) of the first micromechanical function layer (F1), a plurality of two-dimensionally arranged and spaced apart elongated etched trenches (K2, K3) are formed, Wherein, the etched trenches (K2, K3) and the adjacent etched trenches (K2, K3) are in one place by means of the respective interrupted regions (U1, U2) formed by the first micromechanical function layer (F1). Or the two longitudinal ends are spaced apart and reach the first etching depth downwards, the first etching depth being smaller than the thickness of the first micromechanical functional layer (F1); and In the subsequent isotropic etching step, the etched trenches (K2, K3) are extended down to a second etching depth, which is greater than the first etching depth and smaller than the first micromechanical function layer ( The thickness of F1), wherein the etched grooves (K2, K3) in the first micromechanical functional layer (F1) are widened and the interrupted regions (U1, U2) are adjusted to make the first micromechanical The adjacent etched trenches (K2, K3) in the functional layer (F1) are undercut in such a way that they are interconnected under the interrupted regions (U1, U2), and in the first micromechanical functional layer (F1) ) The interruption area (U1, U2) on the upper side is kept. Such as claim 1 for the manufacturing method of micro-mechanical system, where The etched trenches (K2, K3) have a first plurality of first etched trenches (K2) and a second plurality of second etched trenches (K3); The interruption area (U1, U2) has a first plurality of first interruption areas (U1) and a second plurality of second interruption areas (U2); In the first anisotropic etching step and the subsequent isotropic etching step, the first plurality of first etched trenches (K2) extending in the first longitudinal direction (x) and in the second longitudinal direction are formed (Y) the second plurality of second etched trenches (K3) extending upward; Wherein the first etched trench (K2) and the second etched trench (K3) are alternately arranged in the first longitudinal direction (x), and the second etched trench (K3) is arranged in the second In each case arranged in rows in the longitudinal direction (y); The first interruption area (U1) is arranged in the first etched trench (K2) and the second etched trench (K3) in the first longitudinal direction (x) in each case between; The second interruption area (U2) is arranged between the second etched trenches (K3) in the second longitudinal direction (y) in each case. The manufacturing method for a micromechanical system according to claim 2, wherein the first longitudinal direction (x) is configured to be substantially perpendicular to the second longitudinal direction (y). The manufacturing method for a micromechanical system according to any one of claims 1 to 3, wherein a first sacrificial layer (O) is applied to the substrate (S) before the first micromechanical function layer (F1) is applied And wherein after the isotropic etching step, in the second anisotropic etching step, the etched trenches (K2, K3) are etched down to a third etching depth, and the etching depth extends to the third etching depth. The entire depth of a micromechanical functional layer (F1), and the etched trenches (K2, K3) expose the first sacrificial layer (O), wherein the interruption area (U1, U2) remains in the first micro On the upper side of the mechanical function layer (F1), and in the depth direction of the first micromechanical function layer (F1), other interrupted regions (U3) aligned with respect to the interrupted regions (U1, U2) are formed on the first micromechanical functional layer (F1). On the underside of the micromechanical functional layer (F1). The manufacturing method for a micromechanical system according to claim 4, wherein the first area ( Other etched trenches (K0, K1, K1') are formed around B1). Such as the manufacturing method for a micromechanical system of claim 5, wherein these other etched trenches (K0, K1, K1') have a third plurality of etched trenches (K1, K1'), and the third plurality of etched trenches (K1, K1') The etched groove surrounds the first area (B1) to form a closed loop shape. The manufacturing method for a micromechanical system according to claim 6, wherein a second sacrificial layer (O') is formed, and the second sacrificial layer encloses the etched trenches (K2, K3) and the other etched Trenches (K0, K1, K1') and conceal them inside, wherein individual cavities (HZ) are kept in the widened areas of the etched trenches (K0, K1, K1', K2, K3) . The manufacturing method for a micromechanical system according to claim 7, wherein the first via (D) is formed in the second sacrificial layer (O') at the periphery of the first region (B1), and the via is exposed Volts a certain area or certain areas of the first mechanical function layer (F1). The manufacturing method for a micromechanical system according to claim 8, wherein in another isotropic etching step, the first mechanism located under the first passage (D) is removed in a certain area or certain areas The functional layer (F1), wherein the second sacrificial layer (O') serves as an etching stop layer. The manufacturing method for a micromechanical system according to claim 9, wherein a third sacrificial layer (O") that closes the first passage (D) is formed. For example, the manufacturing method for a micromechanical system of claim 10, wherein one or more second passages (D') exposing a certain area or certain areas of the underlying first mechanical function layer (F1) are formed in the The second micromechanical function layer (F2) connected to the first micromechanical function layer (F1) in the first region (B1) and formed and structured therein in the second via (D2). The manufacturing method for a micromechanical system according to claim 11, wherein the etched grooves (K2, K3) and/or the other etched grooves (K0, K1, K1') are used as etching channels by The sacrificial layer etching step removes the first sacrificial layer, the second sacrificial layer and the third sacrificial layer (O, O', O"). A micromechanical system, which includes: The first micromechanical functional layer (F1) applied to the substrate (S); In the first region (B1) of the first micromechanical function layer (F1), there are a plurality of two-dimensionally arranged and spaced apart long and narrow etched trenches (K2, K3), wherein in the first micromechanical function layer (F1) The etched trenches (K2, K3) on the upper side (F1) and the adjacent etched trenches (K2, , K3) Spaced at one or two longitudinal ends; The etched grooves (K2, K3) in the first micromechanical function layer (F1) are widened, and the interrupted regions (U1, U2) are adjusted to make the first micromechanical function layer (F1) The adjacent etched trenches (K2, K3) in the inside thereof are undercut in such a manner that they are interconnected under the interruption area (U1, U2). Such as the micromechanical system of claim 13, where The etched trenches (K2, K3) have a first plurality of first etched trenches (K2) and a second plurality of second etched trenches (K3); The interruption area (U1, U2) has a first plurality of first interruption areas (U1) and a second plurality of second interruption areas (U2); The first plurality of first etched trenches (K2) are formed to extend in the first longitudinal direction (x), and the second plurality of second etched trenches (K3) are formed to extend in the second longitudinal direction ( y) Upward extension; Wherein the first etched trenches (K2) and the second etched trenches (K3) are alternately arranged in the first longitudinal direction (x) and the second etched trenches are arranged in the second longitudinal direction ( y) In each case where the above is arranged in a row; The first interruption area (U1) is arranged in the first etched trench (K2) and the second etched trench (K3) in the first longitudinal direction (x) in each case between; The second interruption area (U2) is arranged between the second etched trenches (K3) in the second longitudinal direction (y) in each case. Such as the micromechanical system of claim 13 or 14, wherein the first area (B1) is connected to a second micromechanical function layer (F2) disposed above the first area in at least one area or some areas, and the first area An area is configured to float freely above the substrate (S).

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