TW202103813A - Cleaning method of semiconductor processing equipment component - Google Patents

Abstract

A cleaning method for semiconductor processing equipment parts includes: providing semiconductor processing equipment parts, the surface of the semiconductor processing equipment parts has a fluorocarbon polymer and a first pollutant wrapped in the fluorocarbon polymer; using the first cleaning The first cleaning agent for the semiconductor processing equipment parts is to remove the fluorocarbon polymer. The first cleaning agent has strong oxidizing properties; after the fluorocarbon polymer is removed, it is washed with water; after the water is washed, the semiconductor is treated with the second cleaning agent The equipment parts undergo a second cleaning process to remove the first pollutants. The second cleaning agent includes a hydrofluoric acid solution or a solution that can be hydrolyzed to produce hydrofluoric acid. The cleaning method cleans the parts of the semiconductor processing equipment relatively cleanly, and does not damage the parts of the semiconductor processing equipment.

Description

Cleaning method of semiconductor processing equipment parts

The present invention relates to the field of semiconductors, in particular to a method for cleaning parts of semiconductor processing equipment.

In the semiconductor process, the process of etching semiconductor materials usually includes a dry etching process or a wet etching process. Among them, since the dry etching process using plasma etching can effectively control the size of the etching opening, it has become the most mainstream etching process. Process. Existing processes usually use glow discharge, radio frequency signals, corona discharge, etc. to form plasma. Among them, when using radio frequency signals to form plasma, the density and energy of the formed plasma can be controlled by adjusting the processing gas composition, the frequency of the radio frequency power, the coupling mode of the radio frequency power, the air pressure, and the temperature, so as to optimize the plasma. Treatment effect. Therefore, in the existing semiconductor etching device, a radio frequency signal is usually used to form plasma, and the radio frequency signal is used to form a bias voltage on the substrate to be processed, so that the plasma bombards the substrate to be processed, and the substrate to be processed is subjected to an etching process.

Existing etching devices that use radio frequency signals to form plasma mainly include inductively coupled plasma (ICP) etching devices, capacitively coupled plasma (CCP) etching devices, and electron cyclotron accelerated oscillation (ECR) etching devices. In the semiconductor manufacturing process, the surface of the parts in the inductively coupled plasma (ICP) etching device and the capacitively coupled plasma (CCP) etching device is easy to accumulate by-products. If the by-products are not removed in time, when the by-products accumulate to a certain amount It will drop at times, and the by-products falling on the wafer surface will affect the quality of the wafer surface.

Existing methods for removing by-products usually include physical grinding or high-temperature treatment. However, the existing methods for removing by-products are difficult to meet the requirements of cleanliness of semiconductor processing equipment parts and the requirements of not causing damage to the surface of semiconductor processing equipment parts.

The technical problem solved by the present invention is to provide a method for cleaning semiconductor processing equipment components, so as to improve the cleanliness of semiconductor processing equipment components and reduce damage to semiconductor processing equipment components.

In order to solve the above technical problems, the present invention provides a method for cleaning semiconductor processing equipment parts, including: providing semiconductor processing equipment parts, the surface of the semiconductor processing equipment parts has a fluorocarbon polymer and a second part wrapped in the fluorocarbon polymer One pollutant; use the first cleaning agent to perform the first cleaning treatment on the parts of the semiconductor processing equipment to remove fluorocarbon polymer. The first cleaning agent has strong oxidizing property; after the fluorocarbon polymer, it is washed with water; after the fluorocarbon polymer is washed, it is used The second cleaning agent performs a second cleaning process on the parts of the semiconductor processing equipment to remove the first pollutants. The second cleaning agent includes a hydrofluoric acid solution or a solution capable of hydrolyzing to generate hydrofluoric acid.

Preferably, the semiconductor processing equipment components include: a gas shower head, an annular lining, an electrostatic chuck, and an insulating window.

Preferably, the first cleaning agent includes at least one of a mixed solution of ammonia water and hydrogen peroxide dissolved in deionized water, a hydrogen peroxide solution dissolved in deionized water, or an ozone solution dissolved in deionized water.

Preferably, when the first cleaning agent is a mixed solution of ammonia water and hydrogen peroxide dissolved in deionized water, the process parameters of the first cleaning treatment include: the volume fraction ratio of ammonia water, double oxidation and deionized water is 1:X : Y, Y is greater than X, the value range of X is any number between 1 and 10, the value range of Y is any number between 1 and 50, and the processing time is: 5 minutes to 1 hour.

Preferably, the material of the first pollutant includes: one or two of _{SiO 2} and AlF _3.

Preferably, the solution capable of hydrolyzing to generate hydrofluoric acid includes: ammonium fluoride solution.

Preferably, when the second cleaning agent is a hydrofluoric acid solution dissolved in deionized water, the process parameters of the second cleaning treatment include: the volume fraction ratio of hydrofluoric acid to deionized water is 1:Z, Z The value range is any number between 10 and 400, and the processing time is 5 minutes to 1 hour.

Preferably, the semiconductor processing equipment component further has a second pollutant, and the material of the second pollutant includes: alumina; after removing the first pollutant, the method further includes: washing the semiconductor processing equipment component with water; , Perform a third cleaning process on the semiconductor processing equipment components to remove the second pollutants.

Preferably, the third cleaning treatment includes: high-pressure water cleaning and ultrasonic cleaning.

Preferably, the surface of the semiconductor processing equipment component further has grease on the surface of the fluorocarbon polymer; before the first cleaning agent is used to remove the fluorocarbon polymer, the method further includes: using a third cleaning agent to remove the grease; a third cleaning agent Including: organic solvents, organic solvents include: ethanol, isopropanol or acetone.

Preferably, the gas shower head and the annular lining both include an anodized area, the surface of the semiconductor processing equipment component in the anodized area has an anodized layer, and the material of the anodized layer includes alumina; when the semiconductor processing equipment component is In the case of the gas shower head and the annular lining, before the first cleaning agent is used to remove the fluorocarbon polymer, it also includes: forming a masking layer in the anodized area; the masking layer includes: tape; using the first cleaning agent to remove the fluorocarbon polymer Methods include: wiping method.

Preferably, when the semiconductor processing equipment component is an insulating window, the method of using the first cleaning agent to remove the fluorocarbon polymer includes: immersing the semiconductor processing equipment component in the first cleaning agent.

Preferably, the number of the first cleaning treatment is N times, and N is a natural number greater than or equal to 1; the number of second cleaning treatments is M times, and M is a natural number greater than or equal to 1.

Preferably, the cleaning method includes at least one cycle cleaning, and the method for each cycle cleaning includes: performing at least one first cleaning process; after performing at least one first cleaning process, performing at least one second cleaning process.

Preferably, after the second cleaning treatment, the surface of the semiconductor processing equipment component further has an anti-plasma layer, and the fluorocarbon polymer is located on the surface of the anti-plasma layer; the material of the anti-plasma layer includes: yttrium oxide or yttrium oxide Fluorine compounds.

Preferably, the formation process of the anti-plasma layer includes a physical vapor deposition process.

Compared with the prior art, the technical solution of the embodiment of the present invention has the following beneficial effects:

In the method for cleaning semiconductor processing equipment parts provided by the technical scheme of the present invention, the first cleaning agent is used to remove the fluorocarbon polymer, and the second cleaning agent is used to remove the first pollutants. Therefore, it is beneficial to improve the cleanliness of the semiconductor processing equipment parts. degree. In addition, in the process of removing the fluorocarbon polymer and the first pollutant, there is no need for high temperature or physical grinding. Therefore, the semiconductor processing equipment parts are not easily damaged. In summary, the method can not only improve the cleanliness of semiconductor processing equipment components, but also has no damage to semiconductor processing equipment components.

Further, when the first cleaning agent is a mixed solution of ammonia water and hydrogen peroxide, the ammonia water can increase the removal rate of the fluorocarbon polymer by the hydrogen peroxide, so that the removal time of the fluorocarbon polymer is shorter.

Furthermore, when the second cleaning agent is a hydrofluoric acid solution, the hydrofluoric acid can _{chemically react with SiO 2} , therefore, it is beneficial to remove SiO ₂ , and the removal _{rate of SiO 2} is faster; and, AlF _{3 is} in the hydrofluoric acid The solubility in the solution is higher, and the dissolution rate is faster. In summary, the removal time _{of SiO 2} and AlF ₃ by hydrofluoric acid solution is relatively short.

As described in the background art, the existing cleaning methods for cleaning semiconductor processing equipment components are difficult to simultaneously improve the cleanliness of semiconductor processing equipment components and reduce damage to semiconductor processing equipment components.

In order to solve the problem, the present invention provides a method for cleaning semiconductor processing equipment components, which includes: using a first cleaning agent to perform a first cleaning treatment on the semiconductor processing equipment components to remove fluorocarbon polymers. The first cleaning agent has a strong Oxidizing; after the fluorocarbon polymer is removed, it is washed with water; after the water is washed, the semiconductor processing equipment parts are subjected to a second cleaning treatment with a second cleaning agent to remove the first pollutants. The second cleaning agent includes a hydrofluoric acid solution or can Hydrolysis produces a solution of hydrofluoric acid. The method can simultaneously improve the cleanliness of the semiconductor processing equipment components and reduce the damage to the semiconductor processing equipment components.

In order to make the above objectives, features and beneficial effects of the present invention more obvious and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

Fig. 1 is a process flow chart of a method for cleaning parts of semiconductor processing equipment.

Please refer to Figure 1, step S1: provide semiconductor processing equipment components, the surface of the semiconductor processing equipment components has a fluorocarbon polymer and the first pollutant wrapped in the fluorocarbon polymer;

Step S2: Use the first cleaning agent to perform the first cleaning treatment on the parts of the semiconductor processing equipment to remove the fluorocarbon polymer. The first cleaning agent has strong oxidizing properties;

Step S3: After removing the fluorocarbon polymer, water washing is performed;

Step S4: After the water washing is performed, a second cleaning agent is used to perform a second cleaning treatment on the semiconductor processing equipment components to remove the first pollutants. The second cleaning agent includes a hydrofluoric acid solution or a solution that can be hydrolyzed to produce hydrofluoric acid.

The following is a detailed description:

2 to 6 are schematic structural diagrams of each step of a method for cleaning parts of semiconductor processing equipment according to the present invention.

Please refer to FIG. 2, a semiconductor processing equipment component 100 is provided. The surface of the semiconductor processing equipment component 100 has a fluorocarbon polymer 101 and a first pollutant 102 wrapped in the fluorocarbon polymer 101.

In this embodiment, the semiconductor processing equipment is an inductively coupled plasma (ICP) etching device. The inductively coupled plasma (ICP) etching device includes a reaction chamber, an air inlet unit, and an insulating window on the top of the reaction chamber, which is located in the reaction chamber The base at the bottom and the electrostatic chuck on the surface of the base. The air inlet unit is used to deliver the reaction gas into the reaction chamber. The reaction gas includes fluorocarbon gas. The semiconductor processing equipment parts 100 include: insulating windows or electrostatic chucks and others Parts exposed to plasma environment.

The reaction gas is converted into plasma in the reaction chamber. The semiconductor processing equipment component 100 is used in a plasma environment. In order to prevent the plasma from damaging the surface of the semiconductor processing equipment component 100, the semiconductor processing equipment component 100 is used on the surface of the semiconductor processing equipment component 100. An anti-plasma layer is formed (not shown in the figure). The material of the anti-plasma layer includes yttrium oxide or yttrium oxyfluoride compound.

The formation process of the anti-plasma layer includes a physical vapor deposition process; the physical vapor deposition process includes a plasma enhanced physical vapor deposition process. The anti-plasma layer formed by the physical vapor deposition process is relatively dense, and the porosity in the anti-plasma layer is very low, close to zero.

Part of the fluorocarbon gas reacts to form a fluorocarbon polymer 101, and the fluorocarbon polymer 101 adheres to the surface of the semiconductor processing equipment component 100.

In this embodiment, when the semiconductor processing equipment component 100 is installed or removed, it is easy to form the grease 103 on the surface of the fluorocarbon polymer on the surface of the semiconductor processing equipment component 100.

In addition, it is easy to form a first pollutant 102 on the surface of the semiconductor processing equipment component 100. The first pollutant 102 includes one or two of _{SiO 2} and AlF _3. Among them, the silicon source in the first pollutant 102 includes silicon-containing substances introduced during wafer or process processing, and the oxygen source in the first pollutant 102 includes: reactive gas or oxygen-containing substances introduced during processing, and aluminum source Including: exposed parts of semiconductor processing equipment or aluminum-containing substances introduced during the manufacturing process, and the fluorine source includes fluorocarbon gas or fluorine-containing substances introduced during the manufacturing process.

In this embodiment, the semiconductor processing equipment component 100 also has a second pollutant 104, and the material of the second pollutant 104 includes alumina.

If the fluorocarbon 101, the first pollutant 102, the grease 103 and the second pollutant 104 are not removed in time, when the fluorocarbon 101, the first pollutant 102, the grease 103 and the second pollutant 104 accumulate to a certain extent , It will fall on the surface of the wafer and cause damage to the surface of the wafer. Therefore, the fluorocarbon 101, the first pollutant 102, the grease 103, and the second pollutant 104 should be removed in time.

Please refer to FIG. 3, using the third cleaning agent 105 to remove the grease 103 (see FIG. 2).

The method of using the third cleaning agent 105 to remove the grease 103 includes: immersing the semiconductor processing equipment component 100 in the third cleaning agent 105 for a period of time.

The third cleaning agent 105 includes an organic solvent, and the organic solvent includes ethanol, isopropanol, or acetone.

After removing the grease 103, it also includes: washing the semiconductor processing equipment components 100 with water. The semiconductor processing equipment component 100 is washed with water to remove the third cleaning agent 105 to prevent the third cleaning agent 105 from affecting the subsequent cleaning process.

Please refer to Figure 4, after the grease 103 is removed, the first cleaning agent 106 is used to perform the first cleaning treatment on the semiconductor processing equipment parts 100 to remove the fluorocarbon polymer 101 (see Figure 3). The first cleaning agent 106 has strong oxidizing properties .

In this embodiment, when the semiconductor processing equipment component is an insulating window, the method of using the first cleaning agent 106 to remove the fluorocarbon polymer 101 includes: immersing the semiconductor processing equipment component 100 in the first cleaning agent 106.

In other embodiments, when the semiconductor processing equipment component is an electrostatic chuck, the method of using the first cleaning agent to remove the fluorocarbon polymer includes a wiping method. The wiping method is used to remove the electrostatic chuck in order to prevent the circuit in the electrostatic chuck from being damaged.

Since the first cleaning agent 106 has strong oxidizing properties, the first cleaning agent 106 can oxidize the fluorocarbon polymer 101, that is, the first cleaning agent 106 can remove the fluorocarbon polymer 101. There is no need for physical grinding in the process of removing fluorocarbon polymer 101, so that the surface of the semiconductor processing equipment parts 100 will not be damaged by physical grinding, and high temperature processing is not required, so that the anti-plasma layer on the surface of the semiconductor processing equipment is not prone to cracking .

The first cleaning agent 106 includes at least one of a mixed solution of ammonia water and hydrogen peroxide dissolved in deionized water, a hydrogen peroxide solution dissolved in deionized water, or an ozone solution dissolved in deionized water.

In this embodiment, the first cleaning agent 106 is a mixed solution of ammonia water and hydrogen peroxide dissolved in deionized water. Due to the strong oxidizing properties of hydrogen peroxide, the fluorocarbon polymer 101 can be removed. The ammonia water can increase the removal rate of the fluorocarbon polymer 101 by hydrogen peroxide, which is beneficial to reduce the time for removing the fluorocarbon polymer 101.

In this embodiment, when the first cleaning agent 106 is a mixed solution of ammonia water and hydrogen peroxide water, the process parameters of the first cleaning treatment include: the volume fraction ratio of ammonia water, double oxidation water and deionized water is 1:X:Y, Y is greater than X, the value range of X is any number between 1 and 10, the value range of Y is any number between 1 and 50, and the processing time is: 5 minutes to 1 hour.

The number of first cleaning treatments is N times, and N is a natural number greater than or equal to 1. The greater the number of the first cleaning process, the more thorough the removal of the fluorocarbon polymer 101, which is beneficial to improving the cleanliness of the semiconductor processing equipment components 100.

After the first cleaning treatment, water washing is performed to facilitate the removal of the first cleaning agent 106 and prevent the first cleaning agent 106 from affecting the subsequent cleaning effect.

Please refer to FIG. 5, after washing with water, the second cleaning agent 107 is used to perform a second cleaning treatment on the semiconductor processing equipment parts 100 to remove the first pollutant 102 (see FIG. 4). The second cleaning agent 107 includes a hydrofluoric acid solution Or it can be hydrolyzed to produce a solution of hydrofluoric acid.

Since the second cleaning agent 107 includes: a hydrofluoric acid solution or a solution that can be hydrolyzed to produce hydrofluoric acid, the hydrofluoric acid _{reacts with SiO 2} chemically, so it is beneficial to remove SiO ₂ , and the rate at which the hydrofluoric acid solution removes SiO ₂ soon; in addition, the solubility of AlF ₃ in physical well hydrofluoric acid solution, and the rate of AlF ₃ in the hydrofluoric acid solution quickly. In summary, the hydrofluoric acid solution has a better dissolving effect on the first pollutant 102, and the dissolution rate is faster. In addition, in the process of using the second cleaning agent 107 to remove the first pollutants 102, physical grinding is not required, so that the surface of the semiconductor processing equipment component 100 will not be damaged by physical grinding, and high temperature processing is not required, so that the semiconductor processing equipment The surface anti-plasma layer is not prone to cracking.

In this embodiment, the second cleaning agent 107 is a hydrofluoric acid solution dissolved in deionized water, and the process parameters of the second cleaning treatment include: the volume fraction ratio of hydrofluoric acid to deionized water is 1:Z, Z The value range of is any number between 10 and 400, and the processing time is 5 minutes to 1 hour.

In other embodiments, the solution capable of hydrolyzing to generate hydrofluoric acid includes: ammonium fluoride solution.

The number of second cleaning treatments is M times, and M is a natural number greater than or equal to 1.

The cleaning method for the semiconductor processing equipment component 100 includes at least one cycle cleaning, and the method for each cycle cleaning includes: performing at least one first cleaning process; after performing at least one first cleaning process, performing at least one second cleaning process. After multiple cycles of cleaning, it is beneficial to the cleanliness of the semiconductor processing equipment components 100.

Since it is difficult for the hydrofluoric acid solution to remove yttrium oxide or yttrium oxyfluoride compound, after the second cleaning treatment, the surface of the semiconductor processing equipment component 100 also has an anti-plasma layer. The anti-plasma layer can prevent plasma from damaging the surface of the semiconductor processing equipment component 100.

After removing the first pollutant 102, the method further includes: washing the semiconductor processing equipment component 100 with water.

Please refer to FIG. 6, after the water washing, the semiconductor processing equipment component 100 is subjected to a third cleaning treatment to remove the second pollutant 104 (see FIG. 5 ).

The third cleaning treatment includes: high-pressure water washing and ultrasonic cleaning.

After the second contaminant 104 is removed, the surface of the semiconductor processing component 100 further has an anti-plasma layer, and the anti-plasma layer is used to prevent plasma from damaging the surface of the semiconductor processing equipment component 100.

FIG. 7 is a schematic diagram of the structure of another semiconductor processing equipment component of the present invention.

Please refer to FIG. 7, a semiconductor processing equipment component 200 is provided. The surface of the semiconductor processing equipment component 200 has a fluorocarbon polymer 201 and a first pollutant 202 wrapped in the fluorocarbon polymer 201.

In this embodiment, the semiconductor processing equipment is a capacitively coupled plasma (CCP) etching device or an inductively coupled plasma (ICP) etching device, and the inductively coupled plasma (ICP) etching device includes: an annular lining, a capacitively coupled plasma ( CCP) The etching device includes a gas shower head, and the semiconductor processing equipment component 200 includes an annular lining or a gas shower head.

In this embodiment, when the semiconductor processing equipment component 200 is a gas shower head or an annular lining, both the gas shower head and the annular lining include an anodized area A, and the semiconductor processing equipment component 200 in the anodized area A There is an anodized layer 205 on the surface, and the material of the anodized layer 205 includes aluminum oxide; when the semiconductor processing equipment component 200 is a gas shower head and an annular lining, before the first cleaning agent is used to remove the fluorocarbon polymer, it also includes: A shielding layer 206 is formed in the anodized area A; the shielding layer 206 includes tape.

The surface of the semiconductor processing equipment also has the grease 203, the fluorocarbon polymer 201, the first pollutant 202 and the second pollutant 204 of the above-mentioned embodiment.

Subsequent removal of grease 203, fluorocarbon polymer 201, and first pollutant 202 are all removed by wiping, and the cleaning agent used in the method of removing grease 203, fluorocarbon polymer 201, and first pollutant 202 is the same as the foregoing embodiment The same, I won’t repeat it again.

The method for removing the second pollutant 204 is the same as the above-mentioned embodiment, and will not be described again.

Although the present invention is disclosed as above, the present invention is not limited thereto. Any person with ordinary knowledge in the technical field to which the invention belongs can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, the protection scope of the invention should be subject to the scope of the patent application.

100,200: Semiconductor processing equipment parts 101,201: fluorocarbon polymer 102,202: the first pollutant 103,203: Grease 104,204: second pollutant 105: Third cleaning agent 106: The first cleaning agent 107: Second cleaning agent 205: Anodized layer 206: Masking Layer A: Anodized area S1, S2, S3, S4: steps

Figure 1 is a process flow chart of a method for cleaning components of semiconductor processing equipment according to the present invention; 2 to 6 are schematic structural diagrams of each step of a method for cleaning parts of semiconductor processing equipment according to the present invention; FIG. 7 is a schematic diagram of the structure of another semiconductor processing equipment component of the present invention.

200: Semiconductor processing equipment parts

201: Fluorocarbon polymer

202: The first pollutant

203: Grease

204: second pollutant

205: Anodized layer

206: Masking Layer

A: Anodized area

Claims (17)

A method for cleaning components of semiconductor processing equipment, which includes: A semiconductor processing equipment component is provided, the surface of the semiconductor processing equipment component has a fluorocarbon polymer and a first pollutant wrapped in the fluorocarbon polymer; Using a first cleaning agent to perform a first cleaning treatment on the semiconductor processing equipment components to remove the fluorocarbon polymer, and the first cleaning agent has strong oxidizing properties; After removing the fluorocarbon polymer, wash with water; After washing with water, use a second cleaning agent to perform a second cleaning treatment on the semiconductor processing equipment components to remove the first pollutants. The second cleaning agent includes a hydrofluoric acid solution or a solution that can be hydrolyzed to produce hydrofluoric acid . The cleaning method according to claim 1, wherein the semiconductor processing equipment components include: a gas shower head, an annular lining, an electrostatic chuck, and an insulating window. The cleaning method according to claim 1, wherein the first cleaning agent comprises: a mixed solution of ammonia and hydrogen peroxide dissolved in deionized water, a hydrogen peroxide solution dissolved in deionized water, or an ozone solution dissolved in deionized water At least one. The cleaning method according to claim 3, wherein when the first cleaning agent is a mixed solution of ammonia water and hydrogen peroxide dissolved in deionized water, the process parameters of the first cleaning treatment include: ammonia water, double oxidation and deionized water The volume fraction ratio of is: 1:X:Y, Y is greater than X, the value range of X is any number between 1 and 10, and the value range of Y is any number between 1 and 50. The processing time is: 5 minutes to 1 hour. The cleaning method according to claim 1, wherein the material of the first pollutant includes: one or two of _{SiO 2} and AlF _3. The cleaning method according to claim 1, wherein the solution capable of producing hydrofluoric acid by hydrolysis includes: an ammonium fluoride solution. The cleaning method according to claim 1, wherein when the second cleaning agent is a hydrofluoric acid solution dissolved in deionized water, the process parameters of the second cleaning treatment include: the volume fraction of hydrofluoric acid and deionized water The ratio is 1:Z, the value range of Z is any number between 10 and 400, and the processing time is 5 minutes to 1 hour. The cleaning method according to claim 1, wherein the surface of the semiconductor processing equipment component further has a second pollutant, the material of the second pollutant includes: alumina; after removing the first pollutant, the method further includes: The semiconductor processing equipment component is washed with water; after the semiconductor processing equipment component is washed, a third cleaning process is performed on the semiconductor processing equipment component to remove the second pollutant. The cleaning method according to claim 8, wherein the third cleaning treatment includes: high-pressure water cleaning and ultrasonic cleaning. The cleaning method according to claim 1, wherein the surface of the semiconductor processing equipment component further has a grease on the surface of the fluorocarbon polymer; before the first cleaning agent is used to remove the fluorocarbon polymer, the method further includes: A third cleaning agent is used to remove the grease; the third cleaning agent includes an organic solvent, and the organic solvent includes ethanol, isopropanol, or acetone. The cleaning method according to claim 2, wherein the gas shower head and the annular lining both include an anodized area, and the surface of the semiconductor processing equipment component in the anodized area has an anodized layer, and the anodized The material of the layer includes aluminum oxide; when the semiconductor processing equipment components are the gas shower head and the annular lining, before the first cleaning agent is used to remove the fluorocarbon polymer, it also includes: forming in the anodized area A shielding layer. The cleaning method according to claim 11, wherein the masking layer comprises: an adhesive tape; and the method of removing the fluorocarbon polymer by the first cleaning agent comprises: a wiping method. The cleaning method according to claim 2, wherein when the semiconductor processing equipment component is the insulating window, the method for removing the fluorocarbon polymer using the first cleaning agent includes: immersing the semiconductor processing equipment component in the The first cleaning agent. The cleaning method according to claim 1, wherein the number of the first cleaning treatment is N, and N is a natural number greater than or equal to 1; the number of the second cleaning treatment is M, and M is a natural number greater than or equal to 1. . The cleaning method according to claim 14, wherein the cleaning method includes at least one cycle cleaning, and each cycle cleaning method includes: performing the first cleaning treatment at least once; after performing the first cleaning treatment at least once, Perform this second cleaning process at least once. The cleaning method according to claim 1, wherein after the second cleaning treatment, the surface of the semiconductor processing equipment component further has an anti-plasma layer, and the fluorocarbon polymer is located on the surface of the anti-plasma layer; the The material of the anti-plasma layer includes yttrium oxide or yttrium oxyfluoride compound. The cleaning method according to claim 16, wherein the formation process of the anti-plasma layer includes: a physical vapor deposition process; the physical vapor deposition process includes a plasma enhanced physical vapor deposition process.

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