TW202032811A - Deep ultraviolet LED device and manufacturing method thereof - Google Patents

Abstract

In order to realize a deep ultraviolet LED device having a high WPE and a high output, enhancement of LEE and improvement of efficiency droop caused by heat of the deep ultraviolet LED device are necessary. This deep ultraviolet LED device has a design wavelength [lambda] (200-355 nm) and is characterized by having: a deep ultraviolet LED element that has, in the following order, a rear surface adhesive layer (Au-Au or Au-AuSn), a support substrate (CuMo or CuW), a joining layer (Au-Au or Au-AuSn), an n-type wiring electrode (Ti/Al/Ti/Au), an insulation film (SiO2), a p-type wiring electrode (Ti/Au/Ni), a p-type reflection electrode (Ni/Au), a p-type GaN contact layer, a p-type AlGaN layer, a multiple quantum barrier layer (MQB), a multiple quantum well layer (MQW), an n-type AlGaN layer, an AlN buffer layer, and a protective film (SiO2), wherein the n-type wiring electrode (Ti/Al/Ti/Au) extends so as to be exposed to an n-type AlGaN layer part through a through hole obtained by being coated and insulated with the insulation film (SiO2) and has a reflection type two-dimensional photonic crystal that has a plurality of holes disposed at positions in a range of the thickness direction of the p-type reflection electrode (Ni/Au) and the p-type GaN contact layer but not beyond the interface between the p-type GaN contact layer and the p-type AlGaN layer, a reflection type two-dimensional photonic crystal cycle structure has a photonic band gap open with respect to a TE polarization component, a cycle a of the reflection type two-dimensional photonic crystal cycle structure satisfies Blagg's condition with respect to light having the design wavelength [lambda], a degree m in Bragg's conditional expression m[lambda]/neff=2a (note that m represents a degree, [lambda] represents the design wavelength, neff represents an effective refractive index of the two-dimensional photonic crystal, and a represents a two-dimensional photonic crystal cycle) satisfies m=3, and a R/a ratio satisfies 0.3 ≤ R/a ≤ 0.4 when R represents the radius of the hole; an aluminum nitride ceramic package that has a surface having the deep ultraviolet LED element mounted thereon, that has an inorganic paint coating film having a reflection rate of 91% or higher, and that has an angle of the inner side wall of the package of 60-75 DEG; and a quartz window that is provided to the outermost surface of the aluminum nitride ceramic package and that seals the deep ultraviolet LED element.

Description

Deep ultraviolet LED device and manufacturing method thereof

The invention relates to a deep ultraviolet LED (Light Emitting Diode, light emitting diode) device and a manufacturing method thereof.

Deep-ultraviolet LEDs with emission wavelengths of 200 nm to 355 nm are used in sterilization applications, medical and agricultural applications, resin hardening, printing, and industrial applications such as coatings. In the current deep ultraviolet LED, the flip chip structure has become the mainstream, that is, after crystal growth of the semiconductor layer on the sapphire substrate, electrodes are formed and deep ultraviolet light is extracted from the sapphire substrate side, and the electro-optical conversion efficiency (WPE) is as low as Less than 3%, the output is as low as less than 100 mW, which cannot reach the output of hundreds of mW required for the above purposes. The main reason is that the light emitted by the quantum well layer is completely absorbed by the p-type GaN contact layer and the light extraction efficiency (LEE) is less than 5%. If the current injection is set to 500 mA or more, the efficiency is reduced due to heat. The output will not increase proportionally. Prior art literature Patent literature

Patent Document 1: Japanese Patent No. 5999800 Patent Document 2: Japanese Patent No. 5983125

[The problem to be solved by the invention]

In Patent Document 1, as shown in FIG. 17B of Patent Document 1, an Al support substrate, a transparent p-type AlGaN contact layer, and an Al reflective electrode layer are used. As shown in Table 9 of Patent Document 1, LEE (light extraction efficiency, light extraction efficiency) reached 31%. However, since the driving voltage is increased by 3 to 4 V, WPE (Wall Plug Efficiency, electro-optical conversion efficiency) has hardly been improved. In addition, due to the reduction in efficiency due to heat, even if the current injection is increased, the output cannot be increased to 100 mW or more.

In Patent Document 2, by using a conductive substrate for the support substrate, power supply from the substrate side can be realized, and a white LED element structure with excellent heat dissipation can be achieved. However, even if this structure is directly applied to a deep-ultraviolet LED, all of the deep-ultraviolet light emitted from the quantum well layer and incident on the p-type GaN contact layer is absorbed, so the LEE becomes less than 5%.

The purpose of the present invention is to realize a high WPE and high output deep ultraviolet LED device by improving the efficiency reduction caused by the heat of the deep ultraviolet LED device and increasing the LEE. [Technical means to solve the problem]

According to the first aspect of the present invention, a deep ultraviolet LED device is provided, which is characterized in that it is a deep ultraviolet LED device with a design wavelength λ (200 nm to 355 nm), and has: deep ultraviolet LED elements, which are sequentially With backside adhesive layer (Au-Au or Au-AuSn), support substrate (CuMo or CuW), bonding layer (Au-Au or Au-AuSn), n-type wiring electrode (Ti/Al/Ti/Au), insulating film (SiO ₂ ), p-type wiring electrode (Ti/Au/Ni), p-type reflective electrode (Ni/Au), p-type GaN contact layer, p-type AlGaN layer, multiple quantum barrier layer (MQB), multiple quantum well layer (MQW), n-type AlGaN layer, AlN buffer layer, protective film (SiO ₂ ), and n-type wiring electrode (Ti/Al/Ti/Au) extends to be insulated by insulating film (SiO ₂ ) The through hole is exposed to the n-type AlGaN layer portion, and the deep ultraviolet LED element has the thickness direction range of the p-type reflective electrode (Ni/Au) and the p-type GaN contact layer and does not exceed the p-type A reflective two-dimensional photonic crystal with a plurality of pores at the interface between the GaN contact layer and the p-type AlGaN layer, and the reflective two-dimensional photonic crystal periodic structure has a photonic band gap opened with respect to the TE polarization component. For light of design wavelength λ, the period a of the periodic structure of the above-mentioned reflective two-dimensional photonic crystal satisfies the conditions of Burrager and exists in the conditional formula mλ/n _eff = 2a (where m: order, λ: Design wavelength, n _eff : the effective refractive index of the two-dimensional photonic crystal, a: the period of the two-dimensional photonic crystal) m satisfies m=3, when the radius of the above pore is set to R, the R/a ratio satisfies 0.3 ≦R/a≦0.4; Aluminum nitride ceramic package, the surface of which is mounted with the above-mentioned deep ultraviolet LED element, contains an inorganic coating film with a reflectivity of 91% or more, and the inside side wall angle of the package is 60 degrees or more and 75 degrees Within; and a quartz window, which is set on the outermost surface of the aluminum nitride ceramic package and seals the deep ultraviolet LED element.

According to the second aspect of the present invention, a deep ultraviolet LED device is provided, which is characterized in that it is a deep ultraviolet LED device with a design wavelength λ (200 nm to 355 nm), and has: deep ultraviolet LED elements, which are sequentially With backside adhesive layer (Au-Au or Au-AuSn), support substrate (CuMo or CuW), bonding layer (Au-Au or Au-AuSn), n-type wiring electrode (Ti/Al/Ti/Au), insulating film (SiO ₂ ), p-type wiring electrode (Ti/Au/Ni), p-type reflective electrode (Ni/Au), p-type GaN contact layer, p-type AlGaN layer, multiple quantum barrier layer (MQB), multiple quantum well layer (MQW), n-type AlGaN layer, AlN buffer layer, protective film (SiO ₂ ), and n-type wiring electrode (Ti/Al/Ti/Au) extends to be insulated by insulating film (SiO ₂ ) The through hole is exposed to the n-type AlGaN layer portion, and the deep ultraviolet LED element has the thickness direction range of the p-type reflective electrode (Ni/Au) and the p-type GaN contact layer and does not exceed the p-type A reflective two-dimensional photonic crystal with a plurality of pores at the interface between the GaN contact layer and the p-type AlGaN layer, and the reflective two-dimensional photonic crystal periodic structure has a photonic band gap opened with respect to the TE polarization component. For light of design wavelength λ, the period a of the periodic structure of the above-mentioned reflective two-dimensional photonic crystal satisfies the conditions of Burrager and exists in the conditional formula mλ/n _eff = 2a (where m: order, λ: Design wavelength, n _eff : the effective refractive index of the two-dimensional photonic crystal, a: the period of the two-dimensional photonic crystal) m satisfies m=3, when the radius of the above pore is set to R, the R/a ratio satisfies 0.3 ≦R/a≦0.4, and further, the deep ultraviolet LED element has a quartz hemispherical lens that is transparent with respect to the wavelength λ bonded to the surface of the protective film (SiO ₂ ), and the diameter of the hemispherical lens has the protective film (SiO ₂ ) A value above the diameter of the inscribed circle in the plane; aluminum nitride ceramic package, the surface of which is mounted with the above-mentioned deep ultraviolet LED element, contains an inorganic paint coating film with a reflectivity of 91% or more, and the inside side wall angle of the package 60 degrees to 75 degrees; and a quartz window, which is set on the outermost surface of the aluminum nitride ceramic package and seals the deep ultraviolet LED element.

According to a third aspect of the present invention, a deep ultraviolet LED device is provided, which is characterized in that it is a deep ultraviolet LED device with a design wavelength λ (200 nm to 355 nm), and has: deep ultraviolet LED elements, which are sequentially With backside adhesive layer (Au-Au or Au-AuSn), support substrate (CuMo or CuW), bonding layer (Au-Au or Au-AuSn), n-type wiring electrode (Ti/Al/Ti/Au), insulating film (SiO ₂ ), p-type wiring electrode (Ti/Au/Ni), p-type reflective electrode (Ni/Au), p-type GaN contact layer, p-type AlGaN layer, multiple quantum barrier layer (MQB), multiple quantum well layer (MQW), n-type AlGaN layer, protective film (SiO ₂ ) components, and n-type wiring electrodes (Ti/Al/Ti/Au) extend to be exposed through through holes insulated by insulating film (SiO ₂ ) Up to the n-type AlGaN layer, and the deep ultraviolet LED element has the thickness direction range of the p-type reflective electrode (Ni/Au) and the p-type GaN contact layer and does not exceed the p-type GaN contact layer and A reflective two-dimensional photonic crystal with a plurality of pores at the interface of the p-type AlGaN layer. The periodic structure of the reflective two-dimensional photonic crystal has a photonic band gap opened relative to the TE polarized light component, which is relative to the design wavelength λ. Light, the period a of the periodic structure of the above-mentioned reflective two-dimensional photonic crystal satisfies Burrege's condition and exists in Bureger's conditional formula mλ/n _eff = 2a (where m: order, λ: design wavelength, n _eff : the effective refractive index of the two-dimensional photonic crystal, a: the period of the two-dimensional photonic crystal) m satisfies m=3, when the radius of the above-mentioned pore is set to R, the R/a ratio satisfies 0.3≦R/a ≦0.4; aluminum nitride ceramic package, the surface of which is mounted with the above-mentioned deep ultraviolet LED element, contains an inorganic paint coating film with a reflectivity of 91% or more, and the inside side wall angle of the package is 60 degrees or more and within 75 degrees; and quartz The window is arranged on the outermost surface of the aluminum nitride ceramic package and seals the deep ultraviolet LED element.

According to a fourth aspect of the present invention, a deep ultraviolet LED device is provided, which is characterized in that it is a deep ultraviolet LED device with a design wavelength λ (200 nm to 355 nm), and has: deep ultraviolet LED elements, which are sequentially With backside adhesive layer (Au-Au or Au-AuSn), support substrate (CuMo or CuW), bonding layer (Au-Au or Au-AuSn), n-type wiring electrode (Ti/Al/Ti/Au), insulating film (SiO ₂ ), p-type wiring electrode (Ti/Au/Ni), p-type reflective electrode (Ni/Au), p-type GaN contact layer, p-type AlGaN layer, multiple quantum barrier layer (MQB), multiple quantum well layer (MQW), n-type AlGaN layer, protective film (SiO ₂ ) components, and n-type wiring electrodes (Ti/Al/Ti/Au) extend to be exposed through through holes insulated by insulating film (SiO ₂ ) Up to the n-type AlGaN layer, and the deep ultraviolet LED element has the thickness direction range of the p-type reflective electrode (Ni/Au) and the p-type GaN contact layer and does not exceed the p-type GaN contact layer and A reflective two-dimensional photonic crystal with a plurality of pores at the interface of the p-type AlGaN layer. The periodic structure of the reflective two-dimensional photonic crystal has a photonic band gap opened relative to the TE polarized light component, which is relative to the design wavelength λ. Light, the period a of the periodic structure of the above-mentioned reflective two-dimensional photonic crystal satisfies Burrege's condition and exists in Bureger's conditional formula mλ/n _eff = 2a (where m: order, λ: design wavelength, n _eff : the effective refractive index of the two-dimensional photonic crystal, a: the period of the two-dimensional photonic crystal) m satisfies m=3, when the radius of the above-mentioned pore is set to R, the R/a ratio satisfies 0.3≦R/a ≦0.4, and further, the deep ultraviolet LED element has a quartz hemispherical lens that is transparent with respect to the wavelength λ bonded to the surface of the protective film (SiO ₂ ), and the diameter of the hemispherical lens is within the surface of the protective film (SiO ₂ ) The value above the diameter of the inscribed circle; aluminum nitride ceramic package, the surface of which is mounted with the above-mentioned deep ultraviolet LED element, contains an inorganic paint coating film with a reflectivity of 91% or more, and the inner side wall angle of the package is 60 degrees or more Within 75 degrees; and a quartz window, which is arranged on the outermost surface of the aluminum nitride ceramic package and seals the deep ultraviolet LED element.

According to the fifth aspect of the present invention, there is provided a method for manufacturing a deep ultraviolet LED device, characterized in that it is a method for manufacturing a deep ultraviolet LED device with a design wavelength λ (200 nm to 355 nm), and has the following steps: The sapphire substrate is a growth substrate on which an AlN buffer layer, an n-type AlGaN layer, a multiple quantum well layer (MQW), a multiple quantum barrier layer (MQB), a p-type AlGaN layer, and a p-type GaN contact layer are sequentially laminated on it; ready for use To form a reflective two-dimensional photonic crystal mold; spin-coated two resist layers on the p-type GaN contact layer, transfer the structure of the mold by the nanoimprint method; transfer the resist with the above structure The etchant layer is used as a mask. ICP (Inductively Coupled Plasma) is etched from the p-type GaN contact layer until it does not exceed the interface of the p-type AlGaN layer, and then cleaned to form a reflective two-dimensional photon Crystal; in addition to forming the above-mentioned reflective two-dimensional photonic crystal, p-type reflective electrode (Ni/Au) is sequentially formed by oblique evaporation; after the p-type reflective electrode (Ni/Au) pattern is formed by the lift-off step, after step by photolithography to form an insulating film (SiO ₂₎ forming a pattern, forming an insulating film (SiO _2);; p-type reflective electrode (Ni / Au) by high-temperature annealing step the p-type peeling Patterns of insulating film (SiO ₂ ) are formed at the same height between the reflective electrode (Ni/Au) patterns; after the p-type wiring electrode (Ti/Au/Ni) pattern is formed by the photolithography step, the film is sequentially formed p-type wiring electrode (Ti/Au/Ni); patterning of p-type wiring electrode (Ti/Au/Ni) by a lift-off step; forming an insulating film (SiO ₂ ); forming an n-type electrode by a photolithography step ( Pattern for forming through hole); forming through hole by ICP etching until it exceeds the position of the interface between the multiple quantum well layer (MQW) and the n-type AlGaN layer; forming an insulating film (SiO ₂ ); removing the formed film by ICP etching On the insulating film (SiO ₂ ) of the bottom surface of the through hole, the n-type AlGaN layer is excavated; on the insulating film (SiO ₂ ) formed in the above step and inside the through hole, a film is sequentially formed by vapor deposition. Type wiring electrode (Ti/Al/Ti/Au); and when the depth from the upper portion of the insulating film (SiO ₂ ) to the deepest portion of the n-type AlGaN layer excavated in the above step is set to h, the film thickness t The standard is t>2h; after film formation, the n-type wiring electrode (Ti/Al/Ti/Au) is annealed at a high temperature; the n-type wiring electrode (Ti/Al/Ti/Au) is made by polishing or CMP Planarization; vapor-deposit an adhesive layer (Au or AuSn) on the n-type wiring electrode (Ti/Al/Ti/Au); prepare a support substrate (CuMo or AuSn) with a support substrate-side bonding layer (Au or AuSn) vapor deposited CuW); is deposited on the above n The bonding layer (Au or AuSn) on the type wiring electrode (Ti/Al/Ti/Au) is bonded to the supporting substrate side bonding layer (Au or AuSn) of the supporting substrate (CuMo or CuW); the excimer is irradiated from the sapphire substrate side The sapphire substrate is stripped from the AlN buffer layer by laser or femtosecond laser (laser stripping: LLO); for the AlN buffer layer, a pattern for element separation is formed by a photolithography step; after the SiO ₂ film is formed, The peeling step forms an SiO ₂ pattern mask; excavation is performed by ICP etching until the insulating film (SiO ₂ ) surface is exposed; after the p-type pad electrode formation pattern is formed by the photolithography step, the insulating film is formed by BHF ( SiO ₂ ) holes; after sequential vapor deposition of p-type pad electrodes (Ti/Au), the resist is removed by a stripping step to form a p-type pad electrode (Ti/Au) pattern; film formation protective film (SiO ₂ ); A pattern for exposing the p-type pad electrode (Ti/Au) covered by the protective film (SiO ₂ ) is formed by a photolithography step; the protective film (SiO ₂ ) is opened by BHF Hole; after the p-type pad electrode (Ti/Au) pattern is formed by the peeling step, the back adhesive layer (Au or AuSn) is vapor-deposited on the back surface of the support substrate (CuMo or CuW); component separation is performed on the support substrate; and Join the backside adhesive layer (Au or AuSn) on the back of the divided element to the n-type electrode of the aluminum nitride ceramic package containing the inorganic paint coating film with a reflectivity of 91% or more, and the p-type electrode and p After wiring of the Ti/Au type pad electrodes, the quartz window is metal-sealed on the upper surface of the aluminum nitride ceramic package.

According to a sixth aspect of the present invention, there is provided a method for manufacturing a deep ultraviolet LED device, characterized in that it is a method for manufacturing a deep ultraviolet LED device with a design wavelength λ (200 nm to 355 nm), and has the following steps: The sapphire substrate is a growth substrate on which an AlN buffer layer, an n-type AlGaN layer, a multiple quantum well layer (MQW), a multiple quantum barrier layer (MQB), a p-type AlGaN layer, and a p-type GaN contact layer are sequentially laminated on it; ready for use To form a reflective two-dimensional photonic crystal mold; spin-coated two resist layers on the p-type GaN contact layer, transfer the structure of the mold by the nanoimprint method; transfer the resist with the above structure The etchant layer is used as a mask. ICP etching is carried out from the p-type GaN contact layer until it does not exceed the position of the p-type AlGaN layer interface, and then it is washed to form a reflective two-dimensional photonic crystal; in addition to forming the above-mentioned reflective two-dimensional photonic crystal The photonic crystals are used to sequentially form p-type reflective electrodes (Ni/Au) by oblique evaporation; after the p-type reflective electrode (Ni/Au) pattern is formed by the lift-off step, the p-type reflective electrodes (Ni/Au) ) high-temperature annealing treatment; after forming a pattern, forming an insulating film (SiO ₂₎ by photolithography in the step of forming an insulating film (SiO _2); by peeling step (Ni / Au) patterned on the p-type reflective electrode is between The insulating film (SiO ₂ ) pattern is formed at the same height; after the p-type wiring electrode (Ti/Au/Ni) pattern is formed by the photolithography step, the p-type wiring electrode (Ti/Au/ Ni); p-type wiring electrode (Ti/Au/Ni) pattern is formed by a peeling step; insulating film (SiO ₂ ) is formed by a photolithography step; n-type electrode (through hole) formation pattern is formed by a photolithography step; by ICP etching forms the through hole until it exceeds the position of the interface between the multiple quantum well layer (MQW) and the n-type AlGaN layer; forms the insulating film (SiO ₂ ); removes the insulating film formed on the bottom surface of the through hole by ICP etching ( SiO ₂ ), and then excavate the n-type AlGaN layer; on the insulating film (SiO ₂ ) formed in the above step and inside the through hole, the n-type wiring electrode (Ti/Al/Ti /Au), and when the depth from the upper part of the insulating film (SiO ₂ ) to the deepest part of the n-type AlGaN layer excavated in the above step is set to h, the standard of the film thickness t is t>2h; Then, the n-type wiring electrode (Ti/Al/Ti/Au) is subjected to high-temperature annealing treatment; the n-type wiring electrode (Ti/Al/Ti/Au) is planarized by polishing or CMP; the n-type wiring electrode (Ti/Al/Ti/Au) vapor-deposit adhesive layer (Au or AuSn) on top of (Ti/Al/Ti/Au); prepare a support substrate (CuMo or CuW) vapor-deposited with the support substrate-side bonding layer (Au or AuSn); Adhesive layer (Au or AuSn) on top of type wiring electrode (Ti/Al/Ti/Au) Join the support substrate side bonding layer (Au or AuSn) of the above support substrate (CuMo or CuW); irradiate the excimer laser or femtosecond laser from the sapphire substrate side to peel the sapphire substrate from the AlN buffer layer (laser lift-off: LLO) ; For the AlN buffer layer, a photolithography step is used to form a pattern for element separation; after the SiO ₂ film is formed, a SiO ₂ pattern mask is formed by a lift-off step; excavated by ICP etching until the insulating film (SiO ₂ ) Until the surface is exposed; after the p-type pad electrode formation pattern is formed by the photolithography step, the insulating film (SiO ₂ ) is opened by BHF; the p-type pad electrode (Ti/Au) is deposited sequentially After that, the resist is removed by a lift-off step to form a p-type pad electrode (Ti/Au) pattern; a protective film (SiO ₂ ) is formed; and a photolithography step is used to form the protective film (SiO _{2 ).} ) The exposed pattern of the covered p-type pad electrode (Ti/Au); the opening of the protective film (SiO ₂ ) using BHF; after the p-type pad electrode (Ti/Au) pattern is formed by the peeling step, The backside adhesive layer (Au or AuSn) is vapor-deposited on the back of the support substrate (CuMo or CuW); the above-mentioned support substrate is divided into components; the surface of the protective film (SiO ₂ ) on the AlN buffer layer of the divided component is supported by atoms The diffusion method or the surface activation method is used to join the quartz hemispherical lens which is transparent to the wavelength λ above the diameter of the inscribed circle in the protective film (SiO ₂ ) plane; and the back adhesive layer (Au Or AuSn) is bonded to the n-type electrode of the aluminum nitride ceramic package containing an inorganic paint coating film with a reflectivity of 91% or more, and the p-type electrode and the p-type pad electrode (Ti/Au) are similarly wired, A quartz window is metal-sealed on the upper surface of the aluminum nitride ceramic package.

According to a seventh aspect of the present invention, there is provided a method for manufacturing a deep ultraviolet LED device, characterized in that it is a method for manufacturing a deep ultraviolet LED device with a design wavelength λ (200 nm ~ 355 nm), and has the following steps: The sapphire substrate is a growth substrate on which an AlN buffer layer, an n-type AlGaN layer, a multiple quantum well layer (MQW), a multiple quantum barrier layer (MQB), a p-type AlGaN layer, and a p-type GaN contact layer are sequentially laminated on it; ready for use To form a reflective two-dimensional photonic crystal mold; spin-coated two resist layers on the p-type GaN contact layer, transfer the structure of the mold by the nanoimprint method; transfer the resist with the above structure The etchant layer is used as a mask. ICP etching is carried out from the p-type GaN contact layer until it does not exceed the position of the p-type AlGaN layer interface, and then it is washed to form a reflective two-dimensional photonic crystal; in addition to forming the above-mentioned reflective two-dimensional photonic crystal The photonic crystals are used to sequentially form p-type reflective electrodes (Ni/Au) by oblique evaporation; after the p-type reflective electrode (Ni/Au) pattern is formed by the lift-off step, the p-type reflective electrodes (Ni/Au) ) high-temperature annealing treatment; after forming a pattern, forming an insulating film (SiO ₂₎ by photolithography in the step of forming an insulating film (SiO _2); by peeling step (Ni / Au) patterned on the p-type reflective electrode is between The insulating film (SiO ₂ ) pattern is formed at the same height; after the p-type wiring electrode (Ti/Au/Ni) pattern is formed by the photolithography step, the p-type wiring electrode (Ti/Au/ Ni); p-type wiring electrode (Ti/Au/Ni) pattern is formed by a peeling step; insulating film (SiO ₂ ) is formed by a photolithography step; n-type electrode (through hole) formation pattern is formed by a photolithography step; by ICP etching forms the through hole until it exceeds the position of the interface between the multiple quantum well layer (MQW) and the n-type AlGaN layer; forms the insulating film (SiO ₂ ); removes the insulating film formed on the bottom surface of the through hole by ICP etching ( SiO ₂ ), and then excavate the n-type AlGaN layer; on the insulating film (SiO ₂ ) formed in the above step and inside the through hole, the n-type wiring electrode (Ti/Al/Ti /Au), and when the depth from the upper part of the insulating film (SiO ₂ ) to the deepest part of the n-type AlGaN layer excavated in the above step is set to h, the standard of the film thickness t is t>2h; Then, the n-type wiring electrode (Ti/Al/Ti/Au) is subjected to high-temperature annealing treatment; the n-type wiring electrode (Ti/Al/Ti/Au) is planarized by polishing or CMP; the n-type wiring electrode (Ti/Al/Ti/Au) vapor-deposit adhesive layer (Au or AuSn) on top of (Ti/Al/Ti/Au); prepare a support substrate (CuMo or CuW) vapor-deposited with the support substrate-side bonding layer (Au or AuSn); Adhesive layer (Au or AuSn) on top of type wiring electrode (Ti/Al/Ti/Au) Join the support substrate side bonding layer (Au or AuSn) of the above support substrate (CuMo or CuW); irradiate the excimer laser or femtosecond laser from the sapphire substrate side to peel the sapphire substrate from the n-type AlGaN layer (laser lift-off: LLO ); For the above-mentioned n-type AlGaN layer, a photolithography step is used to form a pattern for element separation; after SiO _{2 is} formed, a SiO ₂ pattern mask is formed by a lift-off step; excavation is carried out by ICP etching until the insulating film (SiO ₂ ) Until the surface is exposed; after the p-type pad electrode formation pattern is formed by the photolithography step, the insulating film (SiO ₂ ) is opened by BHF; the p-type pad electrode (Ti/ After Au), the resist is removed by a peeling step to form a p-type pad electrode (Ti/Au) pattern; a protective film (SiO ₂ ) is formed; and a photolithography step is used to form the protective film ( SiO ₂₎ p-type pad electrode (Ti / Au) coverage of the exposed pattern; BHF performed using a protective film (SiO ₂₎ of the opening; after release by the step formed on the p-type pad electrode (Ti / Au) pattern , Vapor-deposit the back adhesive layer (Au or AuSn) on the back of the support substrate (CuMo or CuW); divide the above-mentioned supporting substrate; and bond the back adhesive layer (Au or AuSn) on the back of the divided component to the substrate with 91 For the n-type electrode of the aluminum nitride ceramic package with a reflectance of more than% of the inorganic coating film, the p-type electrode and the p-type pad electrode (Ti/Au) are wired in the same way, and then the aluminum nitride ceramic package The upper surface metal seals the quartz window.

According to an eighth aspect of the present invention, there is provided a method for manufacturing a deep ultraviolet LED device, characterized in that it is a method for manufacturing a deep ultraviolet LED device with a design wavelength λ (200 nm to 355 nm), and has the following steps: The sapphire substrate is a growth substrate on which an AlN buffer layer, an n-type AlGaN layer, a multiple quantum well layer (MQW), a multiple quantum barrier layer (MQB), a p-type AlGaN layer, and a p-type GaN contact layer are sequentially laminated on it; ready for use To form a reflective two-dimensional photonic crystal mold; spin-coated two resist layers on the p-type GaN contact layer, transfer the structure of the mold by the nanoimprint method; transfer the resist with the above structure The etchant layer is used as a mask. ICP etching is carried out from the p-type GaN contact layer until it does not exceed the position of the p-type AlGaN layer interface, and then it is washed to form a reflective two-dimensional photonic crystal; in addition to forming the above-mentioned reflective two-dimensional photonic crystal The photonic crystals are used to sequentially form p-type reflective electrodes (Ni/Au) by oblique evaporation; after the p-type reflective electrode (Ni/Au) pattern is formed by the lift-off step, the p-type reflective electrodes (Ni/Au) ) high-temperature annealing treatment; after forming a pattern, forming an insulating film (SiO ₂₎ by photolithography in the step of forming an insulating film (SiO _2); by peeling step (Ni / Au) patterned on the p-type reflective electrode is between The insulating film (SiO ₂ ) pattern is formed at the same height; after the p-type wiring electrode (Ti/Au/Ni) pattern is formed by the photolithography step, the p-type wiring electrode (Ti/Au/ Ni); p-type wiring electrode (Ti/Au/Ni) pattern is formed by a peeling step; insulating film (SiO ₂ ) is formed by a photolithography step; n-type electrode (through hole) formation pattern is formed by a photolithography step; by ICP etching forms the through hole until it exceeds the position of the interface between the multiple quantum well layer (MQW) and the n-type AlGaN layer; forms the insulating film (SiO ₂ ); removes the insulating film formed on the bottom surface of the through hole by ICP etching ( SiO ₂ ), and then excavate the n-type AlGaN layer; on the insulating film (SiO ₂ ) formed in the above step and inside the through hole, the n-type wiring electrode (Ti/Al/Ti /Au), and when the depth from the upper part of the insulating film (SiO ₂ ) to the deepest part of the n-type AlGaN layer excavated in the above step is set to h, the standard of the film thickness t is t>2h; Then, the n-type wiring electrode (Ti/Al/Ti/Au) is subjected to high-temperature annealing treatment; the n-type wiring electrode (Ti/Al/Ti/Au) is planarized by polishing or CMP; the n-type wiring electrode (Ti/Al/Ti/Au) vapor-deposit adhesive layer (Au or AuSn) on top of (Ti/Al/Ti/Au); prepare a support substrate (CuMo or CuW) vapor-deposited with the support substrate-side bonding layer (Au or AuSn); Adhesive layer (Au or AuSn) on top of type wiring electrode (Ti/Al/Ti/Au) Join the support substrate side bonding layer (Au or AuSn) of the above support substrate (CuMo or CuW); irradiate the excimer laser or femtosecond laser from the sapphire substrate side to peel the sapphire substrate from the n-type AlGaN layer (laser lift-off: LLO ); For the above-mentioned n-type AlGaN layer, a photolithography step is used to form a pattern for element separation; after SiO _{2 is} formed, a SiO ₂ pattern mask is formed by a lift-off step; excavation is carried out by ICP etching until the insulating film (SiO ₂ ) Until the surface is exposed; after the p-type pad electrode formation pattern is formed by the photolithography step, the insulating film (SiO ₂ ) is opened by BHF; the p-type pad electrode (Ti/ After Au), the resist is removed by a peeling step to form a p-type pad electrode (Ti/Au) pattern; a protective film (SiO ₂ ) is formed; and a photolithography step is used to form the protective film ( SiO ₂₎ p-type pad electrode (Ti / Au) coverage of the exposed pattern; BHF performed using a protective film (SiO ₂₎ of the opening; after release by the step formed on the p-type pad electrode (Ti / Au) pattern , Evaporate the backside adhesive layer (Au or AuSn) on the back of the support substrate (CuMo or CuW); divide the above-mentioned support substrate; on the surface of the protective film (SiO ₂ ) on the n-type AlGaN layer of the divided element, The quartz hemispherical lens is bonded by the atomic diffusion method or the surface activation method, and the quartz hemispherical lens is transparent with respect to the wavelength λ above the diameter of the inscribed circle in the plane of the protective film (SiO ₂ ); The layer (Au or AuSn) is joined to the n-type electrode of the aluminum nitride ceramic package containing an inorganic paint coating film with a reflectivity of 91% or more, and the p-type electrode and the p-type pad electrode (Ti/Au) After wiring, the quartz window is metal-sealed on the upper surface of the aluminum nitride ceramic package. This specification contains the disclosure of Japanese Patent Application No. 2018-246710, which forms the basis of the priority of this case. [Effects of Invention]

According to the present invention, the WPE and output of deep ultraviolet LED devices can be improved.

Hereinafter, with reference to the drawings, the deep ultraviolet LED device and the manufacturing method thereof according to the embodiment of the present invention will be described in detail.

(First Embodiment) 1A, 1B, and 1C are diagrams showing the structure of an AlGaN-based deep ultraviolet LED device with a wavelength of 280 nm as an example of the design wavelength λ as a deep ultraviolet LED device of the first embodiment of the present invention.

Specifically, as shown in the cross-sectional view of the vertical LED (AlN buffer layer) in FIG. 1B, an aluminum nitride ceramic package 2 with an inorganic paint coating film 17 with a quartz window 1 and an inner side wall angle (θ) of 2a , Protective film (SiO ₂ ) 3, AlN buffer layer 4, n-type AlGaN layer 5, multiple quantum well layer (MQW)/multiple quantum barrier layer (MQB) 6, p-type AlGaN layer/p-type GaN contact layer 7, p Type reflective electrode (Ni/Au) 8, p-type wiring electrode (Ti/Au/Ni) 9a, p-type pad electrode 9b, insulating film (SiO ₂ ) 10, n-type wiring electrode (Ti/Al/Ti/Au) ) 11a, bonding layer (Au-Au or Au-AuSn) 12, supporting substrate (CuMo or CuW) 13, backside adhesive layer (Au-Au or Au-AuSn) 14, reflective two-dimensional photonic crystal periodic structure 100, void 101(h). The above-mentioned reflective two-dimensional photonic crystal periodic structure 100 is formed in the thickness direction of the p-type reflective electrode (Ni/Au) 8 and the p-type AlGaN layer/p-type GaN contact layer 7 and does not exceed the p-type AlGaN layer and the p-type The position of the interface of the GaN contact layer.

FIG. 1A is a top view of the deep ultraviolet LED device viewed from the direction of a quartz window (not shown). Symbol 9b is a p-type pad electrode formed on the p-type wiring electrode (Ti/Au/Ni) 9a. In addition, the cross-sectional view taken along the broken line in FIG. 1A is the cross-sectional view of FIG. 1B.

In Figure 1B, the LED element is laminated on a supporting substrate (CuMo or CuW) 13 with a bonding layer (Au-Au or Au-AuSn) 12, n-type electrode 11, insulating film (SiO ₂ ) 10, and p-type electrode sequentially laminated 9, p-type reflective electrode (Ni/Au) 8, p-type AlGaN layer/p-type GaN contact layer 7, multiple quantum well layer (MQW)/multiple quantum barrier layer (MQB) 6, n-type AlGaN layer 5, AlN buffer Layer 4. The n-type electrode 11 is composed of an n-type wiring electrode (Ti/Al/Ti/Au) 11a, a convex n-type electrode (rising portion) 11b, and an n-type electrode (protruding portion) 11c in contact with the n-type AlGaN layer 5 . The n-type electrode (rising portion) 11b is formed on the penetrating p-type wiring electrode (Ti/Au/Ni) 9a, the p-type reflective electrode (Ni/Au) 8, the p-type AlGaN layer/p-type GaN contact layer 7 and the multiple quantum well In the through hole 10b formed by the layer (MQW)/multiple quantum barrier layer (MQB) 6, the n-type AlGaN layer 5 is in electrical contact with the n-type electrode (protrusion) 11c.

The insulating film (SiO ₂ ) 10 insulates the n-type wiring electrode (Ti/Al/Ti/Au) 11a and the n-type electrode (rising portion) 11b from other layers. Specifically, the n-type wiring electrode 11a is insulated from the p-type electrode 9 by the insulating film (SiO ₂ ) 10 interposed between the p-type wiring electrode (Ti/Au/Ni) 9a. In addition, the n-type electrode (rising portion) 11b is covered with an insulating film (SiO ₂ ) 10, and the n-type electrode (rising portion) 11b and the multiple quantum well layer (MQW)/multiple quantum barrier layer (MQB) 6, p The type AlGaN layer/p-type GaN contact layer 7 and the p-type reflective electrode (Ni/Au) 8 are insulated.

The n-type electrode (protruding portion) 11 c is in contact with the n-type AlGaN layer 5 without interposing the insulating film (SiO ₂ ) 10. The n-type electrode (rising part) 11b protrudes from the front end of the through hole 10b (n-type electrode (protruding part) 11c), but the n-type electrode (rising part) 11b is only exposed from the through hole 10b and is electrically connected to the n-type AlGaN layer 5. Sexual contact is sufficient, and it may not necessarily protrude from the through hole 10b. As shown in FIG. 1B, the electrical connection between the n-type electrode (rising portion) 11b and the n-type AlGaN layer 5, which is in electrical contact with the n-type AlGaN layer 5, is, for example, scattered in a deep ultraviolet LED element. Since a plurality of them are formed, a substantially uniform in-plane current flows from the p-type AlGaN layer/p-type GaN contact layer 7 toward the n-type AlGaN layer 5 in the longitudinal direction. By using a conductive substrate for the support substrate 13, power supply from the conductive substrate side can be realized, and it has a structure excellent in heat dissipation.

1C is a top view of a reflective two-dimensional photonic crystal periodic structure 100. The pore 101(h) having a cylindrical shape and having a circle of radius R as a cross section has a pore structure formed in a triangular lattice shape with a period a along the XY direction. In the above structure, the deep ultraviolet light with a wavelength of 280 nm emitted from the multiple quantum well layer 6 transmits TE light and TM light in all directions to perform elliptically polarized light transmission in the medium. Moreover, the two-dimensional photonic crystal periodic structure 100 disposed near the multiple quantum well layer 6 satisfies the conditional expression of Burrge (mλ/n _eff = 2a, where m: order, λ: emission wavelength, n _eff : two-dimensional photon The effective refractive index of the crystal, a: the period of the two-dimensional photonic crystal), and when the photonic band gap (PBG) is opened relative to the TE polarization component, the deep ultraviolet light incident on the two-dimensional photonic crystal is formed in the plane of the two-dimensional photonic crystal The stable wave is reflected toward the AlN buffer layer 4.

In Figure 1D (a), for the photonic band structure of the TE polarization component when deep ultraviolet light with a wavelength of 280 nm is incident on the two-dimensional photonic crystal (R/a=0.4) formed on the p-type GaN contact layer, Fig. 1D(b) shows the relationship between R/a and PBG value obtained by the plane wave expansion method. Furthermore, the so-called PBG value refers to the value of the gap between the first photon frequency band (ω1TE) and the second photon frequency band (ω2TE), from the minimum value of (the second photon frequency band (ωa/2πc)-(the first photon frequency band) The maximum value of (ωa/2πc)) is calculated. From the figure, it can be seen that there is a proportional relationship between R/a and the PBG value. In addition, the parameters required for the calculation of the plane wave expansion method are calculated as follows. The filling rate of the two-dimensional photonic crystal f is calculated by the following formula (1): f=2π/3 ^0.5 ×(R/a) ² (1) In addition, the effective refractive index n _eff of the two-dimensional photonic crystal is calculated by the following formula (2). n _eff =((n ₂ ² +(n ₁ ² -n ₂ ² )×f)) ^0.5 (2) Therefore, if the refractive index of air is n ₁ =1, the refractive index of the p-type GaN contact layer is n ₂ =2.618, Then, the effective refractive indexes of R/a=0.2, 0.3, and 0.4 become 2.45, 2.223, and 1.859, respectively, according to the above-mentioned 2 equations.

Then, the LEE based on the reflection effect of the two-dimensional photonic crystal was obtained by the simulation analysis performed by the FDTD method. The FDTD method converts the Maxwell equation into a difference equation in space and time to directly calculate the electromagnetic field intensity. Therefore, it is suitable for the wave analysis of nm-structured photonic crystals, but cannot directly calculate the LEE. On the other hand, the ray tracing method directly calculates the number of rays that randomly emit tens of thousands of rays and reach the detector. Therefore, the LEE in the mm structure can be directly calculated. However, the wave analysis of nm structure cannot be performed. Therefore, in order to obtain the LEE based on the reflection effect of the photonic crystal, a cross simulation of the FDTD method and the ray tracing method was carried out.

First, cross-simulation is carried out on the basic model of deep ultraviolet LED constructed with Flip Chip that extracts deep ultraviolet light from the sapphire substrate. Table 1 shows the parameters of the calculation model of the ray tracing method, Table 2 shows the parameters of the calculation model of the FDTD method, and Table 3 shows the parameters of the calculation model of the reflective two-dimensional photonic crystal.

[Table 1] Deep UV LED basic model element size: 1.2 mm square thickness Refractive index Transmittance Reflectivity Side wall angle (θ) Quartz window 200 um 1.494 100% - - Sapphire substrate 430 um 1.82 100% - - AlN buffer layer 2 um 2.285 100% - - AlGaN layer 2 um 2.579 100% - - p-type GaN contact layer 200 nm 2.618 2.3%/200 nm - - p-type reflective electrode (Ni/Au) - - - 30% - Inorganic coating film - - - 91% - Aluminum nitride ceramic package - - - - 45 degrees~90 degrees

[Table 2] Deep UV LED basic model element size: 10,010 nm square Film thickness (nm) Al composition (%) Refractive index Extinction coefficient Relative permeability Instant relative permittivity Inorganic coating film 》200 nm - 1.8 0.06 1.0 3.3 Au reflective electrode 150 nm - 1.678 1.873 1.0 1.0 Ni layer 30 nm - 1.681 2.067 1.0 1.0 p-type GaN contact layer 200 nm - 2.618 0.42 1.0 6.7 p-type AlGaN layer 30 nm 60% 2.622 - - - Multiple quantum barrier layer: 2pair Block 10 nm/5 nm 80% 2.444 - - - Valley 5 nm/5 nm 65% 2.579 - - - Multiple quantum well layer: 3pair Well 5 nm/5 nm/5 nm 50% 2.779 - - - Barrier 10 nm/10 nm/10 nm 65% 2.579 - - - n-type AlGaN layer 2,000 nm 65% 2.579 - - - AlN buffer layer 2,000 nm 100% 2.285 - - - Sapphire substrate 6720 nm - 1.82 - - - Quartz window 100 nm - 1.494 - - -

[table 3] R/a m (frequency) Diameter (nm) Period (nm) R/a=0.3 m=3 113 nm 189 nm R/a=0.4 m=3 181 nm 226 nm

(Calculate LEE by ray tracing method) In the calculation model of the ray tracing method in Figure 1E (no two-dimensional photonic crystal), the angle θ of the inner side wall of the aluminum nitride ceramic package is set as a variable to change it to 45 degrees, 60 degrees, 75 degrees, and 90 degrees. Calculation of LEE. The results are shown in Table 4.

[Table 4] Inside side wall angle 45° 60° 75° 90° LEE 4.6% 4.5% 4.3% 3.9%

(Calculate LEE by FDTD method) In the calculation model of Fig. 1F, the calculation is performed for the model without two-dimensional photonic crystal (2D-PhC) and the model with two-dimensional photonic crystal (2D-PhC). As shown in Table 3, the calculation model of 2D-PhC has two types: m=3 and R/a=0.3, diameter 113 nm, period 189 nm and R/a=0.4, diameter 181 nm, period 226 nm. In addition, the inner side wall angles of the aluminum nitride ceramic package 2 are set to three types of 60 degrees, 75 degrees, and 90 degrees, respectively.

The calculation method of LEE is to first calculate the LEE increase factor (with 2D-PhC output/without 2D-PhC output). Then, multiply the LEE values of 60 degrees, 75 degrees and 90 degrees of the inner side wall angles of the aluminum nitride ceramic package without the 2D-PhC model obtained by the ray tracing method for calculation. The results are shown in Table 5.

[table 5] Inside side wall angle 60° 75° 90° Deep UV LED basic model (no 2D-PhC) 4.5% 4.3% 3.9% The basic model of deep ultraviolet LED (with 2D-PhC, R/a=0.3) 7.4% 7.9% 6.4% The basic model of deep ultraviolet LED (with 2D-PhC, R/a=0.4) 9.6% 10.4% 8.1%

Next, LEE is calculated for the vertical LED (AlN buffer layer) in this embodiment. Figure 1G and Table 6 show the calculation model and calculation parameters using the FDTD method.

[Table 6] Vertical LED (AlN buffer layer) Component size: 10,010 nm square Film thickness (nm) Al composition (%) Refractive index Extinction coefficient Relative permeability Instant relative permittivity Inorganic coating film 》200 nm - 1.8 0.06 1.0 3.3 Mo support substrate 6,300 nm - 2.343 3.88 1.0 1.0 Au layer (n-type wiring electrode) 150 nm - 1.678 1.873 1,0 1.0 Ti layer (n-type wiring electrode) 30 nm - 1.136 1.324 1.0 1.0 Al layer (n-type wiring electrode) 100 nm - 0.241 3.357 1.0 1.0 Ti layer (n-type wiring electrode) 30 nm - 1.136 1.324 1.0 1.0 SiO ₂ (insulating film) 100 nm - 1.494 - - - Ni layer (p-type wiring electrode) 30 nm - 1.681 2.067 1.0 1.0 Au layer (p-type wiring electrode) 150 nm - 1.678 1.873 1.0 1.0 Ti layer (p-type wiring electrode) 30 nm - 1.136 1.324 1.0 1.0 Au reflective electrode 150 nm - 1.678 1.873 1.0 1.0 Ni layer 30 nm - 1.681 2.067 1.0 1.0 p-type GaN contact layer 200 nm - 2.618 0.42 1.0 6.7 p-type AlGaN layer 30 nm 60% 2.622 - - - Multiple quantum barrier layer: Block Valley 10 nm/5 nm 5 nm/5 nm 80% 65% 2.444 2.579 - - - Multiple quantum well layer: Well Barrier 5 nm/5 nm/5 nm 10 nm/10 nm/10 nm 50% 65% 2.779 2.579 - - - n-type AlGaN layer 2,000 nm 65% 2.579 - - - AlN buffer layer 2,000 nm 100% 2.285 - - - SiO ₂ (protective film) 100 nm - 1.494 - - - Quartz window (size: 17,410 nm) 100 nm - 1.494 - - -

The calculation method of LEE is to obtain the vertical LED (AlN buffer layer) without 2D-PhC relative to the basic model of deep ultraviolet LED (without 2D-PhC output) with respect to the inner side wall angles of 60 degrees, 75 degrees and 90 degrees. Output, vertical LED (AlN buffer layer) has 2D-PhC (R/a = 0.3 in Table 3), and vertical LED (AlN buffer layer) has 2D-PhC (R/ in Table 3) a=0.4) LEE increase factor. Then, multiply the LEE values (4.5%, 4.3%, and 3.9%) when the inner side wall angles of the deep ultraviolet LED basic model (without 2D-PhC) described in Table 5 are 60 degrees, 75 degrees, and 90 degrees. The calculation results are shown in Table 7.

[Table 7] Inside side wall angle 60° 75° 90° Vertical LED (AlN buffer layer) (no 2D-PhC) 4.9% 6.6% 3.6% Vertical LED (AlN buffer layer) (R/a=0.3) 7.5% 10.1% 5.5% Vertical LED (AlN buffer layer) (R/a=0.4) 10.1% 13.9% 7.5%

As shown in Table 7, it can be seen that by setting 2D-PhC, the value of LEE increases, and LEE depends on the angle of the inner side wall.

(Second Embodiment) 2A is a plan view showing the structure of an AlGaN-based deep-ultraviolet LED device having a wavelength of 280 nm as an example of the design wavelength λ as the deep-ultraviolet LED device of the second embodiment of the present invention. In addition, FIG. 2B is a cross-sectional view taken along the broken line of FIG. 2A. 2C is a top view of the reflective two-dimensional photonic crystal periodic structure 100.

Specifically, as shown in the cross-sectional view of the quartz hemispherical lens bonded vertical LED (AlN buffer layer) in FIG. 2B, the aluminum nitride with the inorganic paint coating film 17 with the quartz window 1, the inner side wall angle (θ) is 2a Ceramic package 2, aluminum nitride ceramic package inner side wall angle (θ) 2a, quartz hemispherical lens 31, protective film (SiO ₂ ) 3, AlN buffer layer 4, n-type AlGaN layer 5, multiple quantum well layer (MQW)/ Multiple quantum barrier layer (MQB) 6, p-type AlGaN layer/p-type GaN contact layer 7, p-type reflective electrode (Ni/Au) 8, p-type wiring electrode (Ti/Au/Ni) 9a, insulating layer (SiO ₂ 10, n-type wiring electrode (Ti/Al/Ti/Au) 11a, n-type electrode (rising part) 11b, bonding layer (Au-Au or Au-AuSn) 12, support substrate (CuMo or CuW) 13, back The subsequent layer (Au-Au or Au-AuSn) 14, the reflective two-dimensional photonic crystal periodic structure 100, and the void 101 (h). Symbol 9b is a p-type pad electrode formed on the p-type wiring electrode (Ti/Au/Ni) 9a.

In FIG. 2B, the LED element is laminated on a supporting substrate (CuMo or CuW) 13 with a bonding layer (Au-Au or Au-AuSn) 12, an n-type electrode 11, an insulating film (SiO ₂ ) 10, and a p-type electrode in order. 9, p-type reflective electrode (Ni/Au) 8, p-type AlGaN layer/p-type GaN contact layer 7, multiple quantum well layer (MQW)/multiple quantum barrier layer (MQB) 6, n-type AlGaN layer 5, AlN buffer Layer 4.

The n-type electrode 11 consists of an n-type wiring electrode (Ti/Al/Ti/Au) 11a, a convex-shaped n-type electrode (rising portion) 11b, and an n-type electrode (protruding portion) 11c in contact with the n-type AlGaN layer 5. constitute. The n-type electrode (rising portion) 11b is formed on the penetrating p-type wiring electrode (Ti/Au/Ni) 9a, the p-type reflective electrode (Ni/Au) 8, the p-type AlGaN layer/p-type GaN contact layer 7 and the multiple quantum well In the through hole 10b formed by the layer (MQW)/multiple quantum barrier layer (MQB) 6, the n-type AlGaN layer 5 is in electrical contact with the n-type electrode (protrusion) 11c.

The insulating film (SiO ₂ ) 10 insulates the n-type wiring electrode (Ti/Al/Ti/Au) 11a and the n-type electrode (rising portion) 11b from other layers. Specifically, the n-type wiring electrode 11a is insulated from the p-type electrode 9 by the insulating film (SiO ₂ ) 10 interposed between the p-type wiring electrode (Ti/Au/Ni) 9a.

In addition, the n-type electrode (rising portion) 11b is covered with an insulating film (SiO ₂ ) 10, and the n-type electrode (rising portion) 11b and the multiple quantum well layer (MQW)/multiple quantum barrier layer (MQB) 6, p The type AlGaN layer/p-type GaN contact layer 7 and the p-type reflective electrode (Ni/Au) 8 are insulated. The n-type electrode (protruding portion) 11 c is in contact with the n-type AlGaN layer 5 without interposing the insulating film (SiO ₂ ) 10. The n-type electrode (rising portion) 11b protrudes from the front end of the through hole 10b (n-type electrode (protruding portion) 11c), but the n-type electrode (rising portion) 11b is only exposed from the through hole 10b and is electrically connected to the n-type AlGaN layer 5. The contact may be sufficient, and it may not necessarily protrude from the through hole 10b.

In addition, a diagram showing a cross-sectional view along the dotted line in FIG. 2A becomes the same cross-sectional view as FIG. 2B. As shown in FIG. 2B, (the electrical connection portion between the n-type electrode (rising portion) 11b and the n-type AlGaN layer 5) that is in electrical contact with the n-type AlGaN layer 5 is, for example, scattered in a deep ultraviolet LED element. Since a plurality of them are formed, a substantially uniform in-plane current flows from the p-type AlGaN layer/p-type GaN contact layer 7 toward the n-type AlGaN layer 5 in the longitudinal direction. By using a conductive substrate for the support substrate 13, power supply from the conductive substrate side can be realized, and it has a structure excellent in heat dissipation. Furthermore, FIG. 2C shows a top view of the above-mentioned deep ultraviolet LED device and a top view of the reflective two-dimensional photonic crystal periodic structure 100 viewed from the direction of a quartz window (not shown).

The calculation method of the LEE in this LED structure is calculated by the FDTD method in the same way as the vertical LED (AlN buffer layer) in the first embodiment. The calculation model and calculation parameters are shown in Figure 2D and Table 8.

[Table 8] Quartz hemispherical lens combined with vertical LED (AlN buffer layer) Element size: 10,010 nm square Film thickness (nm) Al composition (%) Refractive index Extinction coefficient Relative permeability Instant relative permittivity Inorganic coating film 》200 nm - 1.8 0.06 1.0 3.3 Mo support substrate 6,300 nm - 2.343 3.88 1.0 1.0 Au layer (n-type wiring electrode) 150 nm - 1.678 1.873 1.0 1.0 Ti layer (n-type wiring electrode) 30 nm - 1.136 1.324 1.0 1.0 Al layer (n-type wiring electrode) 100 nm - 0.241 3.357 1.0 1.0 Ti layer (n-type wiring electrode) 30 nm - 1.136 1.324 1.0 1.0 SiO ₂ (insulating film) 100 nm - 1.494 - - - Ni layer (p-type wiring electrode) 30 nm - 1.681 2.067 1.0 1.0 Au layer (p-type wiring electrode) 150 nm - 1.678 1.873 1.0 1.0 Ti layer (p-type wiring electrode) 30 nm - 1.136 1.324 1.0 1.0 Au reflective electrode 150 nm - 1.678 1.873 1.0 1.0 Ni layer 30 nm - 1.681 2.067 1.0 1.0 p-type GaN contact layer 200 nm - 2.618 0.42 1.0 6.7 p-type AlGaN layer 30 nm 60% 2.622 - - - Multiple quantum barrier layer: Biock Valley 10mn/5 nm 5 nm/5 nm 80% 65% 2.444 2.579 - - - Multiple quantum well layer: Well Barrier 5 nm/5 nm/5 nm 10 nm/10 nm/10 nm 50% 65% 2.779 2.579 - - - n-type AlGaN layer 2,000 nm 65% 2.579 - - - AlN buffer layer 2,000 nm 100% 2.285 - - - SiO ₂ (protective film) 100 nm - 1.494 - - - Quartz dome lens 5,000 nm - 1.494 - - - Quartz window (size: 17,410 nm) 100 nm - 1.494 - - -

The specific calculation method of LEE is to obtain the quartz hemispherical lens bonded vertical LED (AlN buffer layer) relative to the basic model of deep ultraviolet LED (no 2D-PhC output) with respect to the inner side wall angle of 60 degrees, 75 degrees and 90 degrees. There is no 2D-PhC output, the quartz hemispherical lens bonded vertical LED (AlN buffer layer) has 2D-PhC (R/a = 0.3 in Table 3), and the quartz hemispherical lens bonded vertical LED (AlN buffer layer) ) Has a LEE increase factor of 2D-PhC (R/a=0.4 in Table 3). Then, multiply the LEE values (4.5%, 4.3%, and 3.9%) when the inner side wall angles of the deep ultraviolet LED basic model (without 2D-PhC) described in Table 5 are 60 degrees, 75 degrees, and 90 degrees. The calculation results are shown in Table 9.

[Table 9] Inside side wall angle 60° 75° 90° Quartz lens bonded vertical LED (AlN buffer layer) (no 2D-PhC) 7.4% 8.6% 5.9% Quartz lens bonded vertical LED (AlN buffer layer) (R/a=0.3) 12.1% 14.7% 9.6% Quartz lens bonded vertical LED (AlN buffer layer) (R/a=0.4) 17.3% 21.5% 13.6%

As shown in Table 9, it can be seen that by setting 2D-PhC, the value of LEE increases, and LEE depends on the angle of the inner side wall.

(Third Embodiment) As a deep ultraviolet LED device of the third embodiment of the present invention, the structure of an AlGaN-based deep ultraviolet LED device having a wavelength of 280 nm as an example of the design wavelength λ is shown in FIGS. 3A, 3B, and 3C.

Specifically, in the cross-sectional view of the vertical LED (n-type AlGaN layer) of FIG. 3B, there is a quartz window 1, an aluminum nitride ceramic package with an inorganic coating film 17, 2, and an inner side wall angle of the aluminum nitride ceramic package ( θ) 2a, protective film (SiO ₂ ) 3, n-type AlGaN layer 5, multiple quantum well layer (MQW)/multiple quantum barrier layer (MQB) 6, p-type AlGaN layer/p-type GaN contact layer 7, p-type reflection Electrode (Ni/Au) 8, p-type wiring electrode (Ti/Au/Ni) 9a, p-type pad electrode 9b, insulating film (SiO ₂ ) 10, n-type wiring electrode (Ti/Al/Ti/Au) 11a , Bonding layer (Au-Au or Au-AuSn) 12, supporting substrate (CuMo or CuW) 13, backside adhesive layer (Au-Au or Au-AuSn) 14, reflective two-dimensional photonic crystal periodic structure 100, pore 101 ( h). The reflective two-dimensional photonic crystal periodic structure 100 is formed in the thickness direction of the p-type reflective electrode (Ni/Au) 7 and the p-type AlGaN layer/p-type GaN contact layer 6 and does not exceed the p-type AlGaN layer and p-type GaN The position of the interface of the contact layer.

In FIG. 3B, the LED element is laminated on a supporting substrate (CuMo or CuW) 13 with a bonding layer (Au-Au or Au-AuSn) 12, an n-type electrode 11, an insulating film (SiO ₂ ) 10, and a p-type electrode in order. 9. P-type reflective electrode (Ni/Au) 8, p-type AlGaN layer/p-type GaN contact layer 7, multiple quantum well layer (MQW)/multiple quantum barrier layer (MQB) 6, n-type AlGaN layer 5. The n-type electrode 11 consists of an n-type wiring electrode (Ti/Al/Ti/Au) 11a, a convex-shaped n-type electrode (rising portion) 11b, and an n-type electrode (protruding portion) 11c in contact with the n-type AlGaN layer 5. constitute.

The n-type electrode (rising portion) 11b is formed on the penetrating p-type wiring electrode (Ti/Au/Ni) 9a, the p-type reflective electrode (Ni/Au) 8, the p-type AlGaN layer/p-type GaN contact layer 7 and the multiple quantum well In the through hole 10b formed by the layer (MQW)/multiple quantum barrier layer (MQB) 6, the n-type AlGaN layer 5 is in electrical contact with the n-type electrode (protrusion) 11c.

The insulating film (SiO ₂ ) 10 insulates the n-type wiring electrode (Ti/Al/Ti/Au) 11a and the n-type electrode (rising portion) 11b from other layers. Specifically, the n-type wiring electrode 11a is insulated from the p-type electrode 9 by the insulating film (SiO ₂ ) 10 interposed between the p-type wiring electrode (Ti/Au/Ni) 9a. In addition, the n-type electrode (rising portion) 11b is covered with an insulating film (SiO ₂ ) 10, and the n-type electrode (rising portion) 11b and the multiple quantum well layer (MQW)/multiple quantum barrier layer (MQB) 6, p The type AlGaN layer/p-type GaN contact layer 7 and the p-type reflective electrode (Ni/Au) 8 are insulated. The n-type electrode (protruding portion) 11 c is in contact with the n-type AlGaN layer 5 without interposing the insulating film (SiO ₂ ) 10.

The n-type electrode (rising portion) 11b protrudes from the front end of the through hole 10b (n-type electrode (protruding portion) 11c), but the n-type electrode (rising portion) 11b is only exposed from the through hole 10b and is electrically connected to the n-type AlGaN layer 5. The contact may be sufficient, and it may not necessarily protrude from the through hole 10b.

In addition, the cross-sectional view shown along the dotted line in FIG. 3A is the cross-sectional view of FIG. 3B. As shown in FIG. 3B, (the electrical connection portion between the n-type electrode (rising portion) 11b and the n-type AlGaN layer 5) that is in electrical contact with the n-type AlGaN layer 5 is, for example, scattered in a deep ultraviolet LED element. Since a plurality of them are formed, a substantially uniform in-plane current flows from the p-type AlGaN layer/p-type GaN contact layer 7 toward the n-type AlGaN layer 5 in the longitudinal direction. By using a conductive substrate for the support substrate 13, power supply from the conductive substrate side can be realized, and it has a structure excellent in heat dissipation.

3A is a top view of the deep ultraviolet LED device viewed from the direction of a quartz window (not shown). Symbol 9b is a p-type pad electrode formed on the p-type wiring electrode (Ti/Au/Ni) 9a. The symbol 11c is an n-type electrode (protrusion).

3C is a top view of a reflective two-dimensional photonic crystal periodic structure 100. The pore 101(h) having a cylindrical shape and having a circle of radius R as a cross section has a pore structure formed in a triangular lattice shape with a period a along the X-Y direction. The reflection effect and principle of the photonic crystal are the same as those described in the first embodiment.

The calculation method of the LEE of the LED structure in this embodiment is calculated by the FDTD method in the same way as the vertical LED (AlN buffer layer) in the first embodiment. The calculation model and calculation parameters are shown in Figure 3D and Table 10.

[Table 10] Vertical LED (n-type AlGaN layer) Element size: 10,010 nm square Film thickness (nm) Al composition (%) Refractive index Extinction coefficient Relative permeability Instant relative permittivity Inorganic coating film 》200 nm - 1.8 0.06 1.0 3.3 Mo support substrate 6,300 nm - 2.343 3.88 1.0 1.0 Au layer (n-type wiring electrode) 150 nm - 1.678 1.873 1.0 1.0 Ti layer (n-type wiring electrode) 30 nm - 1.136 1.324 1.0 1.0 Al layer (n-type wiring electrode) 100 nm - 0.241 3.357 1.0 1.0 Ti layer (n-type wiring electrode) 30 nm - 1.136 1.324 1.0 1.0 SiO ₂ (insulating film) 100 nm - 1.494 - - - Ni layer (p-type wiring electrode) 30 nm - 1.681 2.067 1.0 1.0 Au layer (p-type wiring electrode) 150 nm - 1.678 1.873 1.0 1.0 Ti layer (p-type wiring electrode) 30 nm - 1.136 1.324 1.0 1.0 Au reflective electrode 150 nm - 1.678 1.873 1.0 1.0 Ni layer 30 nm - 1.681 2.067 1.0 1.0 p-type GaN contact layer 200 nm - 2.618 0.42 1.0 6.7 p-type AlGaN layer 30 nm 60% 2.622 - - - Multiple quantum barrier layer: Block Valley 10 nm/5 nm 5 nm/5 nm 80% 65% 2.444 2.579 - - - Multiple quantum well layer: Well Barrier 5 nm/5 nm/5 nm 10 nm/10 nm/10 nm 50% 65% 2.779 2.579 - - - n-type AIGaN layer 2,000 nm 65% 2.579 - - - SiO ₂ (protective film) 100 nm - 1.494 - - - Quartz window (size: 17,410 nm) 100 nm - 1.494 - - -

In addition, the details of the n-type wiring electrode in FIG. 3D are the same as those in FIG. 1G of the first embodiment, so they are not shown in particular. The specific LEE calculation method is to obtain the vertical LED (n-type AlGaN layer) without 2D relative to the basic model of deep ultraviolet LED (no 2D-PhC output) with respect to the inner side wall angles of 60 degrees, 75 degrees and 90 degrees. -PhC output, vertical LED (n-type AlGaN layer) has 2D-PhC (R/a = 0.3 in Table 3), and vertical LED (n-type AlGaN layer) has 2D-PhC (Table 3 R/a=0.4) LEE increase factor recorded in. Then, multiply the LEE values (4.5%, 4.3%, and 3.9%) when the inner side wall angles of the deep ultraviolet LED basic model (without 2D-PhC) described in Table 5 are 60 degrees, 75 degrees, and 90 degrees. The calculation results are shown in Table 11.

[Table 11] Inside side wall angle 60° 75° 90° Vertical LED (n-type AlGaN layer) (no 2D-PhC) 4.1% 5.9% 3.1% Vertical LED (n-type AlGaN layer) (R/a=0.3) 7.0% 10.3% 5.4% Vertical LED (n-type AlGaN layer) (R/a=0.4) 9.5% 14.0% 7.3%

As shown in Table 11, it can be seen that by setting 2D-PhC, the value of LEE increases, and LEE depends on the angle of the inner side wall.

(Fourth Embodiment) As a deep ultraviolet LED device of the fourth embodiment of the present invention, the structure of an AlGaN-based deep ultraviolet LED device with a wavelength of 280 nm as an example of the design wavelength λ is shown in FIGS. 4A to 4C. Fig. 4A is a top view, and Fig. 4B is a cross-sectional view along the broken line of Fig. 4A. 4C is a top view of the reflective two-dimensional photonic crystal periodic structure 100.

Specifically, as shown in the cross-sectional view of the vertical LED (n-type AlGaN layer) bonded with a quartz hemispherical lens in FIG. 4B, a quartz window 1, an aluminum nitride ceramic package with an inorganic coating film 17 and an aluminum nitride ceramic package The inner side wall angle (θ) 2a, quartz hemispherical lens 31, protective film (SiO ₂ ) 3, n-type AlGaN layer 5, multiple quantum well layer (MQW)/multiple quantum barrier layer (MQB) 6, p-type AlGaN layer/ p-type GaN contact layer 7, p-type reflective electrode (Ni/Au) 8, p-type wiring electrode (Ti/Au/Ni) 9a, p-type pad electrode 9b, insulating film (SiO ₂ ) 10, n-type wiring electrode (Ti/Al/Ti/Au) 11a, n-type electrode (rising part) 11b, n-type electrode (protruding part) 11c, bonding layer (Au-Au or Au-AuSn) 12, support substrate (CuMo or CuW) 13 , The back side adhesive layer (Au-Au or Au-AuSn) 14, the reflective two-dimensional photonic crystal periodic structure 100, and the void 101 (h).

In FIG. 4B, the LED element is laminated on a supporting substrate (CuMo or CuW) 13 with a bonding layer (Au-Au or Au-AuSn) 12, an n-type electrode 11, an insulating film (SiO ₂ ) 10, and a p-type electrode in order. 9. P-type reflective electrode (Ni/Au) 8, p-type AlGaN layer/p-type GaN contact layer 7, multiple quantum well layer (MQW)/multiple quantum barrier layer (MQB) 6, n-type AlGaN layer 5. The n-type electrode 11 is composed of an n-type wiring electrode (Ti/Al/Ti/Au) 11a, a convex-shaped n-type electrode (rising portion) 11b, and an n-type electrode (protruding portion) 11c in contact with the n-type AlGaN layer 5 .

The n-type electrode (rising portion) 11b is formed on the penetrating p-type wiring electrode (Ti/Au/Ni) 9a, the p-type reflective electrode (Ni/Au) 8, the p-type AlGaN layer/p-type GaN contact layer 7 and the multiple quantum well In the through hole 10b formed by the layer (MQW)/multiple quantum barrier layer (MQB) 6, the n-type AlGaN layer 5 is in electrical contact with the n-type electrode (protrusion) 11c.

The insulating film (SiO ₂ ) 10 insulates the n-type wiring electrode (Ti/Al/Ti/Au) 11a and the n-type electrode (rising portion) 11b from other layers. Specifically, the n-type wiring electrode 11a is insulated from the p-type electrode 9 by the insulating film (SiO ₂ ) 10 interposed between the p-type wiring electrode (Ti/Au/Ni) 9a.

In addition, the n-type electrode (rising part) 11b is covered with an insulating film (SiO ₂ ) 10, and the n-type electrode (rising part) 11b is formed from the multiple quantum well layer (MQW)/multiple quantum barrier layer (MQB) 6, p The type AlGaN layer/p-type GaN contact layer 7 and the p-type reflective electrode (Ni/Au) 8 are insulated. The n-type electrode (protruding portion) 11 c is in contact with the n-type AlGaN layer 5 without interposing the insulating film (SiO ₂ ) 10.

The n-type electrode (rising portion) 11b protrudes from the front end of the through hole 10b (n-type electrode (protruding portion) 11c), but the n-type electrode (rising portion) 11b is only exposed from the through hole 10b and is electrically connected to the n-type AlGaN layer 5. The contact may be sufficient, and it may not necessarily protrude from the through hole 11b.

In addition, the cross-sectional view shown along the dotted line in FIG. 4A is the cross-sectional view of FIG. 4B. As shown in FIG. 4B, (the electrical connection portion between the n-type electrode (rising portion) 11b and the n-type AlGaN layer 5) that is in electrical contact with the n-type AlGaN layer 5 is, for example, scattered in a deep ultraviolet LED element. Since a plurality of them are formed, a substantially uniform in-plane current flows from the p-type AlGaN layer/p-type GaN contact layer 7 toward the n-type AlGaN layer 5 in the longitudinal direction. By using a conductive substrate for the support substrate 13, power supply from the conductive substrate side can be realized, and it has a structure excellent in heat dissipation. Furthermore, FIG. 4C shows a top view of the deep ultraviolet LED device and a top view of the reflective two-dimensional photonic crystal periodic structure 100 viewed from the direction of a quartz window (not shown).

The calculation method of the LEE in this structure is calculated by the FDTD method in the same way as the vertical LED (n-type AlGaN layer) in the third embodiment. The calculation model and calculation parameters are shown in Figure 4D and Table 12.

[Table 12] Quartz hemispherical lens combined with vertical LED (n-type AlGaN layer) Element size: 10,010 nm square Film thickness (nm) Al composition (%) Refractive index Extinction coefficient Relative permeability Instant relative permittivity Inorganic coating film 》200 nm - 1.8 0.06 1.0 3.3 Mo support substrate 6,300 nm - 2.343 3.88 1.0 1.0 Au layer (n-type wiring electrode) 150 nm - 1.678 1.873 1.0 1.0 Ti layer (n-type wiring electrode) 30 nm - 1.136 1.324 1.0 1.0 Al layer (n-type wiring electrode) 100 nm - 0.241 3.357 1.0 1.0 Ti layer (n-type wiring electrode) 30 nm - 1.136 1.324 1.0 1.0 SiO ₂ (insulating film) 100 nm - 1.494 - - - Ni layer (p-type wiring electrode) 30 nm - 1.681 2.067 1.0 1.0 Au layer (p-type wiring electrode) 150 nm - 1.678 1.873 1.0 1.0 Ti layer (p-type wiring electrode) 30 nm - 1.136 1.324 1.0 1.0 Au reflective electrode 150 nm - 1.678 1.873 1.0 1.0 Ni layer 30 nm - 1.681 2.067 1.0 1.0 p-type GaN contact layer 200 nm - 2.618 0.42 1.0 6.7 p-type AlGaN layer 30 nm 60% 2.622 - - - Multiple quantum barrier layer: Block Valley 10 nm/5 nm 5 nm/5 nm 80% 65% 2.444 2.579 - - - Multiple quantum well layer: Well Barrier 5 nm/5 nm/5 nm 10 nm/10 nm/10 nm 50% 65% 2.779 2.579 - - - n-type AlGaN layer 2,000 nm 65% 2.579 - - - SiO ₂ (protective film) 100 nm - 1.494 - - - Quartz dome lens 5,000 nm - 1.494 - - - Quartz window (size: 17,410 nm) 100 nm - 1.494 - - -

The specific LEE calculation method is to obtain the vertical LED (n-type AlGaN layer) with a quartz hemispherical lens bonded to the basic model of deep ultraviolet LED (no 2D-PhC output) with respect to the inner side wall angles of 60 degrees, 75 degrees and 90 degrees. ) Without 2D-PhC output, quartz hemispherical lens bonded vertical LED (n-type AlGaN layer) with 2D-PhC (R/a = 0.3 in Table 3), and quartz hemispherical lens bonded vertical LED (n Type AlGaN layer) has an LEE increase factor of 2D-PhC (R/a=0.4 in Table 3). Then, multiply the LEE values (4.5%, 4.3%, and 3.9%) when the inner side wall angles of the deep ultraviolet LED basic model (without 2D-PhC) described in Table 5 are 60 degrees, 75 degrees, and 90 degrees. The calculation results are shown in Table 13.

[Table 13] Inside side wall angle 60° 75° 90° Quartz lens bonded vertical LED (n-type AlGaN layer) (no 2D-PhC) 6.4% 7.9% 5.0% Quartz lens bonded vertical LED (n-type AlGaN layer) (R/a=0.3) 11.8% 15.2% 9.3% Quartz lens bonded vertical LED (n-type AlGaN layer) (R/a=0.4) 15.2% 19.8% 11.9%

(Summary of the first to fourth embodiments) Table 14 summarizes the LEE of each structure in the first to fourth embodiments.

[Table 14] Inside side wall angle 60° 75° 90° Deep UV LED basic model (no 2D-PhC) 4.5% 4.3% 3.9% The basic model of deep ultraviolet LED (with 2D-PhC, R/a=0.3) 7.4% 7.9% 6.4% The basic model of deep ultraviolet LED (with 2D-PhC, R/a=0.4) 9.6% 10.4% 8.1% Vertical LED (AlN buffer layer) (no 2D-PhC) 4.9% 6.6% 3.6% Vertical LED (AlN buffer layer) (R/a=0.3) 7.5% 10.1% 5.5% Vertical LED (AlN buffer layer) (R/a=0.4) 10.1% 13.9% 7.5% Quartz lens bonded vertical LED (AlN buffer layer) (no 2D-PhC) 7.4% 8.6% 5.9% Quartz lens bonded vertical LED (AlN buffer layer) (R/a=0.3) 12.1% 14.7% 9.6% Quartz lens bonded vertical LED (AlN buffer layer) (R/a=0.4) 17.3% 21.5% 13.6% Vertical LED (n-type AlGaN layer) (no 2D-PhC) 4.1% 5.9% 3.1% Vertical LED (n-type AlGaN layer) (R/a=0.3) 7.0% 10.3% 5.4% Vertical LED (n-type AlGaN layer) (R/a=0.4) 9.5% 14.0% 7.3% Quartz lens bonded vertical LED (n-type AlGaN layer) (no 2D-PhC) 6.4% 7.9% 5.0% Quartz lens bonded vertical LED (n-type AlGaN layer) (R/a=0.3) 11.8% 15.2% 9.3% Quartz lens bonded vertical LED (n-type AlGaN layer) (R/a=0.4) 15.2% 19.8% 11.9%

In addition, if the driving voltage (V _F ) = 6.5 V and the driving current (I _F ) = 350 mA, the WPE (%) and output (mW) of the deep ultraviolet LED basic model (without 2D-PhC) are 2.2% and 50 mW. When the driving voltage (V _F ) = 6.5 V and the driving current (I _F ) = 350 mA are fixed, the values of WPE (%) and output (mW) are proportional to the value of light extraction efficiency. Therefore, if the WPE (%) and output (mW) of the basic deep UV LED model (without 2D-PhC) when the inner side wall angles are 60 degrees, 75 degrees and 90 degrees are set to 2.2% and 50 mW respectively, then Table 14 The WPE (%) and output (mW) values of other structures described in the section can be calculated by ratio calculation. Also, in the case of the vertical LED structure, since the heat dissipation characteristics are excellent, the output can be increased in proportion to the I _F. Therefore, the output value of I _F =700 mA can also be obtained by proportional calculation. The results are shown in Table 15.

[Table 15] Side wall angle 60° Side wall angle 75° Side wall angle 90° LEE (%) WPE (%) Output (mW) I _F ＝350 mA Output (mW) I _F ＝700 mA LEE (%) WPE (%) Output (mW) I _F ＝350 mA Output (mW) I _F ＝700 mA LEE (%) WPE (%) Output (mW) I _F ＝350 mA Output (mW) I _F ＝700 mA Deep UV LED basic model (no 2D-PhC) 4.5% 2.2% 50 mW - 4.3% 2.2% 50 mW - 3.9% 2.2% 50 mW - The basic model of deep ultraviolet LED (with 2D-PhC, R/a=0.3) 7.4% 3.6% 83 mW - 7.9% 4.0% 91 mW - 6.4% 3.6% 82 mW - The basic model of deep ultraviolet LED (with 2D-PhC, R/a=0.4) 9.6% 4.7% 106 mW - 10.4% 5.3% 121 mW - 8.1% 4.6% 104 mW - Vertical LED (AlN buffer layer) (no 2D-PhC) 4.9% 2.4% 54 mW 109 mW 6.6% 3.4% 77 mW 154 mW 3.6% 2.0% 46 mW 93 mW Vertical LED (AlN buffer layer) (R/a=0.3) 7.5% 3.6% 33 mW 166 mW 10.1% 5.2% 118 mW 236 mW 5.5% 3.1% 71 mW 142 mW Vertical LED (AlN buffer layer) (R/a=0.4) 10.1% 4.9% 112 mW 224 mW 13.9% 7.1% 161 mW 322 mW 7.5% 4.2% 96 mW 192 mW Quartz lens bonded vertical LED (AlN buffer layer) (no 2D-PhC) 7.4% 3.6% 82 mW 164 mW 8.6% 4.4% 100 mW 200 mW 5.9% 3.3% 75 mW 150 mW Quartz lens bonded vertical LED (AlN buffer layer) (R/a=0.3) 12.1% 5.9% 134 mW 268 mW 14.7% 7.5% 171 mW 343 mW 9.6% 5.4% 123 mW 246 mW Quartz lens bonded vertical LED (AlN buffer layer) (R/a=0.4) 17.3% 8.5% 192 mW 385 mW 21.5% 11.0% 250 mW 501 mW 13.6% 7.7% 174 mW 348 mW Vertical LED (n-type AlGaN layer) (no 2D-PhC) 4.1% 2.0% 45 mW 90 mW 5.9% 3.0% 69 mW 138 mW 3.1% 1.7% 40 mW 79 mW Vertical LED (n-type AlGaN layer) (R/a=0.3) 7.0% 3.4% 78 mW 156 mW 10.3% 5.3% 120 mW 239 mW 5.4% 3.0% 69 mW 137 mW Vertical LED (n-type AlGaN layer) (R/a=0.4) 9.5% 4.6% 106 mW 211 mW 14.0% 7.2% 163 mW 325 mW 7.3% 4.1% 94 mW 188 mW Quartz lens bonded vertical LED (n-type AlGaN layer) (no 2D-PhC) 6.4% 3.1% 71 mW 142 mW 7.9% 4.0% 91 mW 183 mW 5.0% 2.8% 65 mW 129 mW Quartz lens bonded vertical LED (n-type AlGaN layer) (R/a=0.3) 11.8% 5.7% 131 mW 261 mW 15.2% 7.8% 177 mW 354 mW 9.3% 5.2% 119 mW 237 mW Quartz lens bonded vertical LED (n-type AlGaN layer) (R/a=0.4) 15.2% 7.4% 169 mW 337 mW 19.8% 10.1% 230 mW 460 mA 11.9% 6.7% 153 mW 306 mW

The conclusion shows that, compared to the 50 mW output of the deep UV LED basic model (without 2D-PhC), the vertical LED (AlN buffer layer) has 2D-PhC, and the quartz hemispherical lens bonded vertical LED (AlN buffer layer) has 2D. -PhC, vertical LED (n-type AlGaN layer) with 2D-PhC, quartz hemispherical lens bonded vertical LED (n-type AlGaN layer) with 2D-PhC can be obtained in any structure of 150 mW to 500 mW High output.

(Fifth Embodiment) The manufacturing method of the vertical LED (AlN buffer layer) device according to the fifth embodiment of the present invention will be described using drawings.

(Figure 5A(a)) First, the sapphire substrate 21 is used as a growth substrate, and an AlN buffer layer 4, an n-type AlGaN layer 5, a multiple quantum well layer (MQW)/multiple quantum barrier layer (MQB) 6, a p-type AlGaN layer/p Type GaN contact layer 7. Then, after preparing the mold for forming the reflective two-dimensional photonic crystal, two layers of resist are spin-coated on the p-type AlGaN layer/p-type GaN contact layer 7, and the mold is transferred by the nanoimprint method The structure.

(Figure 5A(b)) Using the resist layer transferred with the above-mentioned structure as a mask R1, the p-type AlGaN layer/p-type GaN contact layer 7 is ICP-etched and then washed to form a reflective two-dimensional photonic crystal (hole 101(h)) . (Figure 5B(c)) In addition to forming a reflective two-dimensional photonic crystal, a p-type reflective electrode (Ni/Au) pattern R2 is formed by a photolithography step. (Figure 5B(d)) P-type reflective electrodes (Ni/Au) 8 are sequentially formed by oblique vapor deposition.

(FIG. 5C(e)) After the p-type reflective electrode (Ni/Au) pattern is formed by the lift-off step, the p-type reflective electrode (Ni/Au) 8 is subjected to high temperature annealing treatment. (FIG. 5C(f)) A pattern R3 for forming an insulating film (SiO ₂ ) is formed by a photolithography step. (FIG. 5D(g)) An insulating film (SiO ₂ ) 10 is formed. (FIG. 5D(h)) The insulating film (SiO ₂ ) pattern 10 is formed at the same height between the p-type reflective electrode (Ni/Au) patterns 8 by a peeling step.

(FIG. 5E(i)) The p-type wiring electrode (Ti/Au/Ni) pattern R4 is formed by a photolithography step. (FIG. 5E(j)) P-type wiring electrodes (Ti/Au/Ni) 9a are sequentially formed. (FIG. 5F(k)) The p-type wiring electrode (Ti/Au/Ni) pattern 9a is formed by a peeling step. (FIG. 5F(l)) An insulating film (SiO ₂ ) 10x is formed.

(FIG. 5G(m)) A pattern R5 for forming an n-type electrode (through hole) is formed by a photolithography step. (FIG. 5G(n)) The through hole 41 reaching a position beyond the interface between the multiple quantum well layer (MQW)/multiple quantum barrier layer (MQB) 6 and the n-type AlGaN layer 5 is formed by ICP etching. (FIG. 5H(o)) An insulating film (SiO ₂ ) 10y is formed. (FIG. 5H(p)) The insulating film (SiO ₂ ) formed on the bottom surface of the through hole 41 is removed by ICP etching, and then the n-type AlGaN layer 5 is excavated (formation of the groove 41a).

(FIG. 5I(q)) On the insulating film (SiO ₂ ) 10x formed in the step of FIG. 5H(o) and the inside of the through hole 41a after the step of FIG. 5H(p), according to the vapor deposition method The n-type wiring electrode (Ti/Al/Ti/Au) 11x is deposited sequentially. When the depth from the upper portion of the insulating film (SiO ₂ ) 10 to the deepest portion of the n-type AlGaN layer 5 excavated in the step of FIG. 5H(p) is set to h, the standard of the film thickness t is t>2h . After the film formation, the n-type wiring electrode (Ti/Al/Ti/Au) 11x is subjected to a high temperature annealing treatment. Thereby, the structure can be made as follows: the n-type electrode (rising portion) 11b extends to be exposed to the n-type AlGaN layer 5 through the through hole 10b formed in the insulating film (SiO ₂ ) 10, and interacts with the n-type AlGaN layer 4 The contact (is covered by the insulating film (SiO ₂ ) 10 to be insulated), and is electrically connected to the n-type wiring electrode (Ti/Al/Ti/Au) 11a. For example, the n-type electrode (rising portion) 11b protrudes from the front end of the through hole 10b, and electrically contacts the n-type AlGaN layer 5 at the protruding portion 11c. (FIG. 5I(r)) The n-type wiring electrode (Ti/Al/Ti/Au) 11x is planarized by polishing (Polish) or CMP (Chemical Mechanical Polishing). (FIG. 5J(s)) An adhesive layer (Au or AuSn) 14 is deposited on the n-type wiring electrode (Ti/Al/Ti/Au) 11x. (FIG. 5J(t)) A support substrate (CuMo or CuW) 13 on which a bonding layer (Au or AuSn) 12 on the support substrate 13 side is vapor-deposited is prepared.

(Figure 5K(u)) The supporting substrate side bonding layer (Au or AuSn) 12 of the supporting substrate (CuMo or CuW) 13 is bonded to the bonding layer (Au or AuSn) 14 in the step of FIG. 5J(s). (Figure 5K(v)) The excimer laser or femtosecond laser is irradiated from the side of the sapphire substrate 21 to peel the sapphire substrate 21 from the AlN buffer layer 4 (laser peeling: LLO). (Figure 5K(w)) A pattern R6 for element separation formation is formed by a photolithography step.

(FIG. 5L(x)) After the SiO ₂ film is formed, the SiO ₂ pattern mask 51 is formed by a lift-off step. (FIG. 5L(y)) Excavation is performed by ICP etching until the surface of the insulating film (SiO ₂ ) 10 is exposed. (FIG. 5M(z1)) The p-type pad electrode formation pattern R7 is formed by a photolithography step. After that, the insulating film (SiO ₂ ) 10 is opened (61) by using BHF (Buffered Hydrofluoric acid).

(FIG. 5M(z2)) After the p-type pad electrode (Ti/Au) 9b is sequentially vapor-deposited, the resist is removed by a lift-off step to form the p-type pad electrode (Ti/Au) pattern 9b. (FIG. 5N(z3)) A protective film (SiO ₂ ) 3 is formed. (FIG. 5N(z4)) The photolithography step is used to form a pattern R8 for exposing the p-type pad electrode (Ti/Au) 9b covered by the protective film (SiO ₂ ) 10. (Fig. 5O(z5)) The protective film (SiO ₂ ) 10 is opened (71) using BHF. (FIG. 5O(z6) After the p-type pad electrode (Ti/Au) pattern 9b is formed by a peeling step, a back adhesive layer (Au or AuSn) 14 is vapor-deposited on the back surface of the support substrate (CuMo or CuW) 13.

The supporting substrate 13 is divided into components by dicing (not shown). Join the backside adhesive layer (Au or AuSn) on the back of the divided device to the n-type electrode of the aluminum nitride ceramic package 2, and similarly wire the p-type electrode and the p-type pad electrode (Ti/Au) 9b. The upper surface of the aluminum nitride ceramic package 2 is metal-sealed with the quartz window 1 (see FIG. 1B, etc.).

(Sixth Embodiment) A method of manufacturing a quartz hemispherical lens bonded vertical LED (AlN buffer layer) device according to the sixth embodiment of the present invention will be described using drawings. In addition, the steps of FIGS. 5A(a) to 50(z6) are the same as those in the fifth embodiment, so the description will not be repeated. (Figure 5P(z7)) The surface of the protective film (SiO ₂ ) 3 on the AlN buffer layer 4 of the divided element is bonded to the quartz hemispherical lens 31 by the atomic diffusion method or the surface activation method, and the quartz hemispherical lens 31 is opposite The wavelength λ above the diameter of the inscribed circle in the plane with the protective film (SiO ₂ ) is transparent. Join the backside adhesive layer (Au or AuSn) on the back of the device to the n-type electrode of the aluminum nitride ceramic package 2. Similarly, the p-type electrode and the p-type pad electrode (Ti/Au) 9b are wired, and then the aluminum nitride The upper surface of the ceramic package 2 is metal-sealed with a quartz window 1 (not shown).

(The seventh embodiment) The manufacturing method of the vertical LED (n-type AlGaN layer) device according to the seventh embodiment of the present invention will be described using drawings. In addition, the steps other than FIG. 5K(v) are the same as in the fifth embodiment, so they are not described. (Figure 5K(v)) It is also possible to irradiate an excimer laser or a femtosecond laser from the sapphire substrate side to peel the sapphire substrate from the n-type AlGaN layer (laser lift-off: LLO).

(Eighth Embodiment) The manufacturing method of the quartz hemispherical lens bonded vertical LED (n-type AlGaN layer) device of the eighth embodiment of the present invention will be described using drawings. In addition, since the steps in FIGS. 5A(a) to 50(z6) are the same as in the seventh embodiment, the description will not be repeated. (Figure 5P(z7)) The surface of the protective film (SiO ₂ ) on the n-type AlGaN layer of the divided element is bonded to the quartz hemispherical lens 31 by the atomic diffusion method or the surface activation method. The quartz hemispherical lens 31 is opposite to The wavelength λ above the diameter of the inscribed circle in the plane with the protective film (SiO ₂ ) is transparent. The backside adhesive layer (Au or AuSn) 14 on the back of the device is bonded to the n-type electrode of the aluminum nitride ceramic package 2, and the p-type electrode and the p-type pad electrode (Ti/Au) 9b are wired in the same way, and then the The upper surface of the aluminum ceramic package 2 is metal-sealed with a quartz window 1 (not shown).

According to the deep-ultraviolet LED of this embodiment, by bonding the vertical LED structure to the support substrate with good thermal conductivity, the thermal conductivity (heat dissipation) can be improved, and the decrease in efficiency due to heat and the increase in current injection can be suppressed. Thereby increasing the output. In addition, by forming 2D-PhC due to the p-type AlGaN layer, compared to the output when there is no 2D-PhC, there are 2D-PhC, quartz hemispherical lens bonded vertical LED (AlN buffer layer) in the vertical LED (AlN buffer layer) Layer) has 2D-PhC, vertical LED (n-type AlGaN layer) has 2D-PhC, vertical LED with quartz hemispherical lens bonding (n-type AlGaN layer) has 2D-PhC in any structure, both Able to achieve a large and high output. That is, the WPE and output of the deep ultraviolet LED device can be improved.

In the above-mentioned embodiment, the illustrated configuration and the like are not limited to these, and can be appropriately changed within the scope of the effect of the present invention. In addition, as long as it does not deviate from the scope of the object of the present invention, it can be suitably changed and implemented. In addition, the various constituent elements of the present invention can be selected arbitrarily, and inventions having configurations selected by the selection are also included in the present invention. [Industrial availability]

The invention can be used in deep ultraviolet LEDs.

All publications, patents and patent applications cited in this specification are all incorporated herein by reference.

1: Quartz window 2: Aluminum nitride ceramic package with inorganic coating film 2a: Inside side wall angle 3: Protective film (SiO ₂ ) 4: AlN buffer layer 5: n-type AlGaN layer 6: Multiple quantum well layer (MQW )/Multiple Quantum Barrier Layer (MQB) 7: p-type AlGaN layer/p-type GaN contact layer 8: p-type reflective electrode (Ni/Au) 9: p-type electrode 9a: p-type wiring electrode (Ti/Au/Ni) 9b: p-type pad electrode 10: insulating film (SiO ₂ ) 10a: rising portion of insulating film (SiO ₂ ) 10b: through hole 10x: insulating film (SiO ₂ ) 10y: insulating film (SiO ₂ ) 11: n-type Electrode 11a: n-type wiring electrode (Ti/Al/Ti/Au) 11b: n-type electrode (rising part) 11c: n-type electrode (protruding part) 11x: n-type wiring electrode (Ti/Al/Ti/Au) 12 : Bonding layer (Au-Au or Au-AuSn) 13: Supporting substrate (CuMo or CuW) 14: Backside adhesive layer (Au-Au or Au-AuSn) 17: Inorganic paint coating film 21: Sapphire substrate 31: Quartz hemisphere Lens 41: Through hole 41a: Slot 51: SiO ₂ pattern mask 61: Opening 71: Opening 100: Reflective two-dimensional photonic crystal periodic structure 101 (h): Pore (columnar structure, hole) R1: Mask Cover R2: p-type reflective electrode (Ni/Au) formation pattern R3: insulating film (SiO ₂ ) formation pattern R4: p-type wiring electrode (Ti/Au/Ni) formation pattern R5: n-type electrode (through hole ) Pattern for formation R6: Pattern for element separation formation R7: Pattern for p-type pad electrode formation R8: Pattern θ: Sidewall angle

Fig. 1A is a top view of a deep ultraviolet LED device according to the first embodiment of the present invention. 1B is a cross-sectional view of the deep ultraviolet LED device according to the first embodiment of the present invention. Fig. 1C is a plan view showing an arrangement example of the reflective photonic crystal of the deep ultraviolet LED device of the first embodiment of the present invention. Figure 1D(a) and (b) are the photonic frequency band structure of the TE polarization component of the two-dimensional photonic crystal formed on the p-type GaN contact layer and the relationship between R/a and PBG value obtained by the plane wave expansion method Figure. 1E is a diagram showing a calculation model in the ray tracing method of the deep ultraviolet LED device according to the first embodiment of the present invention. Figure 1F is a calculation model in the FDTD (Finite Difference Time Domain) method of a deep ultraviolet LED device constructed with a Flip Chip structure that extracts deep ultraviolet light from a sapphire substrate. Fig. 1G is a calculation model in the FDTD method of the deep ultraviolet LED device of the first embodiment of the present invention. It also shows an enlarged view of the vicinity of the n-type wiring electrode. 2A is a top view of the deep ultraviolet LED device according to the second embodiment of the present invention. 2B is a cross-sectional view of the deep ultraviolet LED device according to the second embodiment of the present invention. 2C is a plan view showing an arrangement example of the reflective photonic crystal of the deep ultraviolet LED device of the second embodiment of the present invention. 2D is a calculation model in the FDTD method of the deep ultraviolet LED device of the second embodiment of the present invention. Fig. 3A is a top view of a deep ultraviolet LED device according to a third embodiment of the present invention. 3B is a cross-sectional view of the deep ultraviolet LED device according to the third embodiment of the present invention. 3C is a top view of the reflective photonic crystal of the deep ultraviolet LED device according to the third embodiment of the present invention. Fig. 3D is a calculation model in the FDTD method of the deep ultraviolet LED device of the third embodiment of the present invention. Fig. 4A is a top view of a deep ultraviolet LED device according to a fourth embodiment of the present invention. 4B is a cross-sectional view of the deep ultraviolet LED device according to the fourth embodiment of the present invention. 4C is a plan view showing a configuration example of the reflective photonic crystal of the deep ultraviolet LED device of the fourth embodiment of the present invention. Fig. 4D is a calculation model in the FDTD method of the deep ultraviolet LED device of the fourth embodiment of the present invention. 5A(a) and (b) are diagrams showing steps related to the manufacturing method of the deep ultraviolet LED device according to the fifth and sixth embodiments of the present invention. 5B(c) and (d) are diagrams showing steps related to the manufacturing method of the deep ultraviolet LED device of the fifth and sixth embodiments of the present invention. 5C(e) and (f) are diagrams showing steps related to the manufacturing method of the deep ultraviolet LED device of the fifth and sixth embodiments of the present invention. 5D(g) and (h) are diagrams showing steps related to the manufacturing method of the deep ultraviolet LED device of the fifth and sixth embodiments of the present invention. 5E(i) and (j) are diagrams showing steps related to the manufacturing method of the deep ultraviolet LED device of the fifth and sixth embodiments of the present invention. 5F(k) and (l) are diagrams showing steps related to the manufacturing method of the deep ultraviolet LED device of the fifth and sixth embodiments of the present invention. 5G(m), (n) are diagrams showing steps related to the manufacturing method of the deep ultraviolet LED device of the fifth and sixth embodiments of the present invention. 5H(o) and (p) are diagrams showing steps related to the manufacturing method of the deep ultraviolet LED device of the fifth and sixth embodiments of the present invention. 5I(q), (r) are diagrams showing steps related to the manufacturing method of the deep ultraviolet LED device of the fifth and sixth embodiments of the present invention. 5J(s), (t) are diagrams showing steps related to the manufacturing method of the deep ultraviolet LED device of the fifth and sixth embodiments of the present invention. 5K(u), (v), (w) are diagrams showing steps related to the manufacturing method of the deep ultraviolet LED device of the fifth and sixth embodiments of the present invention. 5L(x), (y) are diagrams showing steps related to the manufacturing method of the deep ultraviolet LED device of the fifth and sixth embodiments of the present invention. 5M (z1) and (z2) are diagrams showing steps related to the manufacturing method of the deep ultraviolet LED device of the fifth and sixth embodiments of the present invention. 5N (z3) and (z4) are diagrams showing steps related to the manufacturing method of the deep ultraviolet LED device of the fifth and sixth embodiments of the present invention. 50 (z5), (z6) are diagrams showing steps related to the manufacturing method of the deep ultraviolet LED device of the fifth and sixth embodiments of the present invention. Fig. 5P(z7) is a diagram showing steps related to the manufacturing method of the deep ultraviolet LED device of the fifth and sixth embodiments of the present invention.

1: Quartz window

2: Aluminum nitride ceramic package with inorganic coating film

2a: Inside side wall angle

3: Protective film (SiO ₂ )

4: AlN buffer layer

5: n-type AlGaN layer

6: Multiple quantum well layer (MQW)/multiple quantum barrier layer (MQB)

7: p-type AlGaN layer/p-type GaN contact layer

8: p-type reflective electrode (Ni/Au)

9: p-type electrode

9a: p-type wiring electrode (Ti/Au/Ni)

9b: p-type pad electrode

10: Insulating film (SiO ₂ )

10a: Rising part of insulating film (SiO ₂ )

10b: Through hole

11: n-type electrode

11a: n-type wiring electrode (Ti/Al/Ti/Au)

11b: n-type electrode (rising part)

11c: n-type electrode (protrusion)

12: Bonding layer (Au-Au or Au-AuSn)

13: Support substrate (CuMo or CuW)

14: Adhesive layer on the back side (Au-Au or Au-AuSn)

17: Inorganic coating film

100: Periodic structure of reflective two-dimensional photonic crystal

101(h): Porosity (columnar structure, pore)

θ: side wall angle

Claims (8)

A deep-ultraviolet LED device, characterized in that it is a deep-ultraviolet LED device with a design wavelength of λ (200 nm ~ 355 nm), and has: deep-ultraviolet LED elements, which are sequentially provided with back adhesive layers (Au-Au or Au -AuSn), support substrate (CuMo or CuW), bonding layer (Au-Au or Au-AuSn), n-type wiring electrode (Ti/Al/Ti/Au), insulating film (SiO ₂ ), p-type wiring electrode ( Ti/Au/Ni), p-type reflective electrode (Ni/Au), p-type GaN contact layer, p-type AlGaN layer, multiple quantum barrier layer (MQB), multiple quantum well layer (MQW), n-type AlGaN layer, AlN Buffer layer, protective film (SiO ₂ ) elements, and n-type wiring electrodes (Ti/Al/Ti/Au) extend to be exposed to the n-type AlGaN layer through the insulating through holes covered by the insulating film (SiO ₂ ) So far, and the deep ultraviolet LED element has a thickness of the p-type reflective electrode (Ni/Au) and the p-type GaN contact layer and does not exceed the thickness of the p-type GaN contact layer and the p-type AlGaN layer. A reflective two-dimensional photonic crystal with a plurality of pores at the location of the interface, the above-mentioned reflective two-dimensional photonic crystal periodic structure has a photonic band gap opened relative to the TE polarization component, and relative to the light of the design wavelength λ, the above-mentioned reflective two The period a of the periodic structure of the two-dimensional photonic crystal satisfies the condition of Burrager, and exists in the conditional formula of Burrager mλ/n _eff = 2a (where m: order, λ: design wavelength, n _eff : two-dimensional photonic crystal The effective refractive index, a: the period of the two-dimensional photonic crystal) in the number m satisfies m=3, when the radius of the above-mentioned pore is set to R, the R/a ratio satisfies 0.3≦R/a≦0.4; aluminum nitride A ceramic package with the above-mentioned deep-ultraviolet LED element mounted on its surface, including an inorganic paint coating film with a reflectivity of 91% or more, and the angle of the inner side wall of the package is 60 degrees or more and within 75 degrees; and a quartz window, which is arranged above The outermost surface of the aluminum nitride ceramic package seals the above-mentioned deep ultraviolet LED element. A deep-ultraviolet LED device, characterized in that it is a deep-ultraviolet LED device with a design wavelength of λ (200 nm ~ 355 nm), and has: deep-ultraviolet LED elements, which are sequentially provided with back adhesive layers (Au-Au or Au -AuSn), support substrate (CuMo or CuW), bonding layer (Au-Au or Au-AuSn), n-type wiring electrode (Ti/Al/Ti/Au), insulating film (SiO ₂ ), p-type wiring electrode ( Ti/Au/Ni), p-type reflective electrode (Ni/Au), p-type GaN contact layer, p-type AlGaN layer, multiple quantum barrier layer (MQB), multiple quantum well layer (MQW), n-type AlGaN layer, AlN Buffer layer, protective film (SiO ₂ ) elements, and n-type wiring electrodes (Ti/Al/Ti/Au) extend to be exposed to the n-type AlGaN layer through the insulating through holes covered by the insulating film (SiO ₂ ) So far, and the deep ultraviolet LED element has a thickness of the p-type reflective electrode (Ni/Au) and the p-type GaN contact layer and does not exceed the thickness of the p-type GaN contact layer and the p-type AlGaN layer. A reflective two-dimensional photonic crystal with a plurality of pores at the location of the interface, the above-mentioned reflective two-dimensional photonic crystal periodic structure has a photonic band gap opened relative to the TE polarization component, and relative to the light of the design wavelength λ, the above-mentioned reflective two The period a of the periodic structure of the two-dimensional photonic crystal satisfies the condition of Burrager, and exists in the conditional formula of Burrager mλ/n _eff = 2a (where m: order, λ: design wavelength, n _eff : two-dimensional photonic crystal The effective refractive index, a: the period of the two-dimensional photonic crystal) in the order m satisfies m=3, when the radius of the above-mentioned pore is set to R, the R/a ratio satisfies 0.3≦R/a≦0.4, and further, the The deep ultraviolet LED element has a quartz hemispherical lens that is transparent to the wavelength λ bonded to the surface of the protective film (SiO ₂ ), and the diameter of the hemispherical lens is greater than the diameter of the inscribed circle in the surface of the protective film (SiO ₂ ) The value of aluminum nitride ceramic package, the surface of which is mounted with the above-mentioned deep ultraviolet LED element, contains an inorganic paint coating film with a reflectivity of 91% or more, and the angle of the inner side wall of the package is 60 degrees or more and within 75 degrees; and quartz The window is arranged on the outermost surface of the aluminum nitride ceramic package and seals the deep ultraviolet LED element. A deep-ultraviolet LED device, characterized in that it is a deep-ultraviolet LED device with a design wavelength of λ (200 nm ~ 355 nm), and has: deep-ultraviolet LED elements, which are sequentially provided with back adhesive layers (Au-Au or Au -AuSn), support substrate (CuMo or CuW), bonding layer (Au-Au or Au-AuSn), n-type wiring electrode (Ti/Al/Ti/Au), insulating film (SiO ₂ ), p-type wiring electrode ( Ti/Au/Ni), p-type reflective electrode (Ni/Au), p-type GaN contact layer, p-type AlGaN layer, multiple quantum barrier layer (MQB), multiple quantum well layer (MQW), n-type AlGaN layer, protection Film (SiO ₂ ), and the n-type wiring electrode (Ti/Al/Ti/Au) extends to the n-type AlGaN layer through the insulating through-hole covered by the insulating film (SiO ₂ ), and the The deep-ultraviolet LED element is provided within the thickness direction of the p-type reflective electrode (Ni/Au) and the p-type GaN contact layer and does not exceed the position of the interface between the p-type GaN contact layer and the p-type AlGaN layer A reflective two-dimensional photonic crystal with a plurality of pores, the periodic structure of the reflective two-dimensional photonic crystal has a photonic band gap opened relative to the TE polarization component, and the light of the design wavelength λ is The period a of the periodic structure has the condition of Burrager, and exists in the conditional formula of Burrager mλ/n _eff = 2a (where m: order, λ: design wavelength, n _eff : effective refractive index of two-dimensional photonic crystal , A: The number of times m in the period of the two-dimensional photonic crystal satisfies m=3. When the radius of the above-mentioned pore is set to R, the R/a ratio satisfies 0.3≦R/a≦0.4; aluminum nitride ceramic package, which The above-mentioned deep ultraviolet LED element is mounted on the surface, including an inorganic paint coating film with a reflectivity of 91% or more, and the angle of the inner side wall of the package is 60 degrees or more and within 75 degrees; and a quartz window is set on the aluminum nitride ceramic The outermost surface of the package is sealed and the above-mentioned deep ultraviolet LED element is sealed. A deep-ultraviolet LED device, characterized in that it is a deep-ultraviolet LED device with a design wavelength of λ (200 nm ~ 355 nm), and has: deep-ultraviolet LED elements, which are sequentially provided with back adhesive layers (Au-Au or Au -AuSn), support substrate (CuMo or CuW), bonding layer (Au-Au or Au-AuSn), n-type wiring electrode (Ti/Al/Ti/Au), insulating film (SiO ₂ ), p-type wiring electrode ( Ti/Au/Ni), p-type reflective electrode (Ni/Au), p-type GaN contact layer, p-type AlGaN layer, multiple quantum barrier layer (MQB), multiple quantum well layer (MQW), n-type AlGaN layer, protection Film (SiO ₂ ), and the n-type wiring electrode (Ti/Al/Ti/Au) extends to the n-type AlGaN layer through the insulating through-hole covered by the insulating film (SiO ₂ ), and the The deep-ultraviolet LED element is provided within the thickness direction of the p-type reflective electrode (Ni/Au) and the p-type GaN contact layer and does not exceed the position of the interface between the p-type GaN contact layer and the p-type AlGaN layer A reflective two-dimensional photonic crystal with a plurality of pores, the periodic structure of the reflective two-dimensional photonic crystal has a photonic band gap opened relative to the TE polarization component, and the light of the design wavelength λ is The period a of the periodic structure satisfies the condition of Burrager and exists in the conditional formula of Burrager mλ/n _eff = 2a (where m: order, λ: design wavelength, n _eff : effective refractive index of two-dimensional photonic crystal , A: the period of the two-dimensional photonic crystal) m satisfies m=3, when the radius of the above-mentioned aperture is set to R, the R/a ratio satisfies 0.3≦R/a≦0.4, and further, the deep ultraviolet LED element Having a quartz hemispherical lens that is transparent with respect to the wavelength λ bonded to the surface of the protective film (SiO ₂ ), and the diameter of the quartz hemispherical lens has a value greater than the diameter of the inscribed circle in the protective film (SiO ₂ ) plane; Aluminum nitride ceramic package, the surface of which is mounted with the above-mentioned deep ultraviolet LED element, includes an inorganic paint coating film with a reflectivity of 91% or more, and the angle of the inner side wall of the package is 60 degrees or more and within 75 degrees; and a quartz window, which It is arranged on the outermost surface of the aluminum nitride ceramic package and seals the deep ultraviolet LED element. A method for manufacturing a deep ultraviolet LED device is characterized in that it is a method for manufacturing a deep ultraviolet LED device with a design wavelength of λ (200 nm to 355 nm), and has the following steps: making a sapphire substrate a growth substrate, and Sequentially stacked AlN buffer layer, n-type AlGaN layer, multiple quantum well layer (MQW), multiple quantum barrier layer (MQB), p-type AlGaN layer, p-type GaN contact layer; prepare a mold for forming reflective two-dimensional photonic crystals ; Two resist layers were spin-coated on the p-type GaN contact layer, and the structure of the above mold was transferred by nanoimprinting; the resist layer with the above structure was transferred as a mask, from the p-type The GaN contact layer is etched by ICP until it does not exceed the position of the p-type AlGaN layer interface, and then cleaned to form a reflective two-dimensional photonic crystal; in addition to forming the above-mentioned reflective two-dimensional photonic crystal, it is also subjected to oblique evaporation. The p-type reflective electrode (Ni/Au) is formed sequentially; after the p-type reflective electrode (Ni/Au) pattern is formed by the lift-off step, the p-type reflective electrode (Ni/Au) is subjected to high-temperature annealing treatment; the step of forming the insulating film after the film (SiO ₂₎ forming a pattern, forming an insulating film (SiO _2); stripping step by the p-type reflective electrode (Ni / Au) is formed between the patterned insulating film (SiO ₂₎ at the same height Pattern; After forming the p-type wiring electrode (Ti/Au/Ni) pattern by the photolithography step, the p-type wiring electrode (Ti/Au/Ni) is sequentially formed; the p-type wiring is formed by the peeling step Electrode (Ti/Au/Ni) pattern; film formation of insulating film (SiO ₂ ); pattern formation for n-type electrode (through hole) formation by photolithography step; formation of through hole by ICP etching until it exceeds the multiple quantum well layer (MQW) and the n-type AlGaN layer interface; forming an insulating film (SiO ₂ ); removing the insulating film (SiO ₂ ) formed on the bottom surface of the through hole by ICP etching, and then tapping the n-type AlGaN layer; On the insulating film (SiO ₂ ) formed in the above steps and inside the through hole, n-type wiring electrodes (Ti/Al/Ti/Au) are sequentially deposited by vapor deposition, and the insulating film (SiO ₂ ) ₂ ) When the depth from the upper part to the deepest part of the n-type AlGaN layer excavated in the above step is set to h, the standard of the film thickness t is t>2h; after film formation, the n-type wiring electrode (Ti/Al /Ti/Au) high-temperature annealing treatment; planarize the n-type wiring electrode (Ti/Al/Ti/Au) by polishing or CMP; on the n-type wiring electrode (Ti/Al/Ti/Au) Vapor-deposited bonding layer (Au or AuSn); prepare a support substrate (CuMo or CuW) vapor-deposited with a support substrate-side bonding layer (Au or AuSn); vapor-deposit on the n-type wiring electrode (Ti/Al/Ti/Au) ) The adhesive layer (Au or AuSn) above the support substrate (CuMo or C uW) supporting substrate-side bonding layer (Au or AuSn); irradiating an excimer laser or femtosecond laser from the sapphire substrate side to peel the sapphire substrate from the AlN buffer layer (laser lift-off: LLO) step; for the above AlN buffer layer , Forming a pattern for element separation formation by a photolithography step; after forming a SiO ₂ film, forming a SiO ₂ pattern mask by a lift-off step; excavating by ICP etching until the insulating film (SiO ₂ ) surface is exposed; After the p-type pad electrode formation pattern is formed by the photolithography step, the insulating film (SiO ₂ ) is opened by BHF; after the p-type pad electrode (Ti/Au) is deposited sequentially, it is removed by the peeling step The pattern of p-type pad electrode (Ti/Au) is formed by resist; a protective film (SiO ₂ ) is formed; the p-type pad is covered by the protective film (SiO ₂ ) by a photolithography step The exposed pattern of the electrode (Ti/Au); the opening of the protective film (SiO ₂ ) by BHF; after the p-type pad electrode (Ti/Au) pattern is formed by the lift-off step, on the support substrate (CuMo or CuW) The back side adhesive layer (Au or AuSn) is vapor-deposited on the back side; the above-mentioned support substrate is divided; and the back side adhesive layer (Au or AuSn) on the back side of the divided component is bonded to an inorganic coating containing a reflectance of 91% or more. The n-type electrode of the coated aluminum nitride ceramic package is similarly wired with the p-type electrode and the p-type pad electrode (Ti/Au), and then the quartz window is metal-sealed on the upper surface of the aluminum nitride ceramic package. A method for manufacturing a deep ultraviolet LED device is characterized in that it is a method for manufacturing a deep ultraviolet LED device with a design wavelength of λ (200 nm to 355 nm), and has the following steps: making a sapphire substrate a growth substrate, and Sequentially stacked AlN buffer layer, n-type AlGaN layer, multiple quantum well layer (MQW), multiple quantum barrier layer (MQB), p-type AlGaN layer, p-type GaN contact layer; prepare a mold for forming reflective two-dimensional photonic crystals ; Two resist layers were spin-coated on the p-type GaN contact layer, and the structure of the above mold was transferred by nanoimprinting; the resist layer with the above structure was transferred as a mask, from the p-type The GaN contact layer is etched by ICP until it does not exceed the position of the p-type AlGaN layer interface, and then cleaned to form a reflective two-dimensional photonic crystal; in addition to forming the above-mentioned reflective two-dimensional photonic crystal, it is also subjected to oblique evaporation. The p-type reflective electrode (Ni/Au) is formed sequentially; after the p-type reflective electrode (Ni/Au) pattern is formed by the lift-off step, the p-type reflective electrode (Ni/Au) is subjected to high-temperature annealing treatment; the step of forming the insulating film after the film (SiO ₂₎ forming a pattern, forming an insulating film (SiO _2); stripping step by the p-type reflective electrode (Ni / Au) is formed between the patterned insulating film (SiO ₂₎ at the same height Pattern; After forming the p-type wiring electrode (Ti/Au/Ni) pattern by the photolithography step, the p-type wiring electrode (Ti/Au/Ni) is sequentially formed; the p-type wiring is formed by the peeling step Electrode (Ti/Au/Ni) pattern; film formation of insulating film (SiO ₂ ); pattern formation for n-type electrode (through hole) formation by photolithography step; formation of through hole by ICP etching until it exceeds the multiple quantum well layer (MQW) and the n-type AlGaN layer interface; forming an insulating film (SiO ₂ ); removing the insulating film (SiO ₂ ) formed on the bottom surface of the through hole by ICP etching, and then tapping the n-type AlGaN layer; On the insulating film (SiO ₂ ) formed in the above steps and inside the through hole, n-type wiring electrodes (Ti/Al/Ti/Au) are sequentially deposited by vapor deposition, and the insulating film (SiO ₂ ) ₂ ) When the depth from the upper part to the deepest part of the n-type AlGaN layer excavated in the above step is set to h, the standard of the film thickness t is t>2h; after film formation, the n-type wiring electrode (Ti/Al /Ti/Au) high-temperature annealing treatment; planarize the n-type wiring electrode (Ti/Al/Ti/Au) by polishing or CMP; on the n-type wiring electrode (Ti/Al/Ti/Au) Vapor-deposited bonding layer (Au or AuSn); prepare a support substrate (CuMo or CuW) vapor-deposited with a support substrate-side bonding layer (Au or AuSn); vapor-deposit on the n-type wiring electrode (Ti/Al/Ti/Au) ) The adhesive layer (Au or AuSn) above the support substrate (CuMo or CuW) supporting substrate-side bonding layer (Au or AuSn); irradiating an excimer laser or femtosecond laser from the sapphire substrate side and peeling the sapphire substrate from the AlN buffer layer (laser lift-off: LLO) step; for the AlN buffer layer , Forming a pattern for element separation formation by a photolithography step; after forming a SiO ₂ film, forming a SiO ₂ pattern mask by a lift-off step; excavating by ICP etching until the insulating film (SiO ₂ ) surface is exposed; After the p-type pad electrode formation pattern is formed by the photolithography step, the insulating film (SiO ₂ ) is opened by BHF; after the p-type pad electrode (Ti/Au) is sequentially vapor-deposited, the p-type pad electrode (Ti/Au) is deposited by the peeling step The resist is removed to form a p-type pad electrode (Ti/Au) pattern; a protective film (SiO ₂ ) is formed; a p-type solder covered by the protective film (SiO ₂ ) is formed by a photolithography step The exposed pattern of the pad electrode (Ti/Au); the opening of the protective film (SiO ₂ ) using BHF; after the p-type pad electrode (Ti/Au) pattern is formed by the lift-off step, it is placed on the support substrate (CuMo or CuW) ) Evaporation of the back side adhesive layer (Au or AuSn) on the back side; device segmentation of the above-mentioned support substrate; on the surface of the protective film (SiO ₂ ) on the AlN buffer layer of the segmented device, by atomic diffusion method or surface activation method Bonded quartz hemispherical lens, the quartz hemispherical lens is transparent with respect to the wavelength λ above the diameter of the inscribed circle in the plane of the protective film (SiO ₂ ); and the back adhesive layer (Au or AuSn) on the back of the element is bonded to The n-type electrode of the aluminum nitride ceramic package with an inorganic paint coating film with a reflectivity of 91% or more, and the p-type electrode and the p-type pad electrode (Ti/Au) are wired in the same way, and then the aluminum nitride ceramic The upper surface of the package is metal-sealed with the quartz window. A method for manufacturing a deep ultraviolet LED device is characterized in that it is a method for manufacturing a deep ultraviolet LED device with a design wavelength of λ (200 nm to 355 nm), and has the following steps: making a sapphire substrate a growth substrate, and Sequentially stacked AlN buffer layer, n-type AlGaN layer, multiple quantum well layer (MQW), multiple quantum barrier layer (MQB), p-type AlGaN layer, p-type GaN contact layer; prepare a mold for forming reflective two-dimensional photonic crystals ; Two resist layers were spin-coated on the p-type GaN contact layer, and the structure of the above mold was transferred by nanoimprinting; the resist layer with the above structure was transferred as a mask, from the p-type The GaN contact layer is etched by ICP until it does not exceed the position of the p-type AlGaN layer interface, and then cleaned to form a reflective two-dimensional photonic crystal; in addition to forming the above-mentioned reflective two-dimensional photonic crystal, it is also subjected to oblique evaporation. The p-type reflective electrode (Ni/Au) is formed sequentially; after the p-type reflective electrode (Ni/Au) pattern is formed by the lift-off step, the p-type reflective electrode (Ni/Au) is subjected to high-temperature annealing treatment; the step of forming the insulating film after the film (SiO ₂₎ forming a pattern, forming an insulating film (SiO _2); stripping step by the p-type reflective electrode (Ni / Au) is formed between the patterned insulating film (SiO ₂₎ at the same height Pattern; After forming the p-type wiring electrode (Ti/Au/Ni) pattern by the photolithography step, the p-type wiring electrode (Ti/Au/Ni) is sequentially formed; the p-type wiring is formed by the peeling step Electrode (Ti/Au/Ni) pattern; film formation of insulating film (SiO ₂ ); pattern formation for n-type electrode (through hole) formation by photolithography step; formation of through hole by ICP etching until it exceeds the multiple quantum well layer (MQW) and the n-type AlGaN layer interface; forming an insulating film (SiO ₂ ); removing the insulating film (SiO ₂ ) formed on the bottom surface of the through hole by ICP etching, and then tapping the n-type AlGaN layer; On the insulating film (SiO ₂ ) formed in the above steps and inside the through holes, n-type wiring electrodes (Ti/Al/Ti/Au) are sequentially formed by vapor deposition; and the insulating film (SiO 2) ₂ ) When the depth from the upper part to the deepest part of the n-type AlGaN layer excavated in the above step is set to h, the standard of the film thickness t is t>2h; after film formation, the n-type wiring electrode (Ti/Al /Ti/Au) high-temperature annealing treatment; planarize the n-type wiring electrode (Ti/Al/Ti/Au) by polishing or CMP; on the n-type wiring electrode (Ti/Al/Ti/Au) Vapor-deposited bonding layer (Au or AuSn); prepare a support substrate (CuMo or CuW) vapor-deposited with a support substrate-side bonding layer (Au or AuSn); vapor-deposit on the n-type wiring electrode (Ti/Al/Ti/Au) ) The adhesive layer (Au or AuSn) above the support substrate (CuMo or C uW) supporting substrate side bonding layer (Au or AuSn); irradiating an excimer laser or femtosecond laser from the sapphire substrate side to peel the sapphire substrate from the n-type AlGaN layer (laser lift-off: LLO); for the above n-type AlGaN The layer is formed by a photolithography step to form a pattern for element separation; after the SiO ₂ film is formed, a SiO ₂ pattern mask is formed by a lift-off step; excavated by ICP etching until the insulating film (SiO ₂ ) surface is exposed; After the p-type pad electrode formation pattern is formed by the photolithography step, the insulating film (SiO ₂ ) is opened by BHF; after the p-type pad electrode (Ti/Au) is sequentially vapor-deposited, it is peeled off The resist is removed to form a p-type pad electrode (Ti/Au) pattern; a protective film (SiO ₂ ) is formed; a p-type covered by the protective film (SiO ₂ ) is formed by a photolithography step The exposed pattern of the pad electrode (Ti/Au); the opening of the protective film (SiO ₂ ) using BHF; after the p-type pad electrode (Ti/Au) pattern is formed by the lift-off step, it is placed on the support substrate (CuMo or CuW) Evaporation of the backside adhesive layer (Au or AuSn) on the back; dividing the above-mentioned support substrate; and bonding the backside adhesive layer (Au or AuSn) on the backside of the divided device to an inorganic compound with a reflectance of 91% or more For the n-type electrode of the aluminum nitride ceramic package coated with paint, the p-type electrode and the p-type pad electrode (Ti/Au) are also wired, and the quartz window is metal-sealed on the upper surface of the aluminum nitride ceramic package. . A method for manufacturing a deep ultraviolet LED device is characterized in that it is a method for manufacturing a deep ultraviolet LED device with a design wavelength of λ (200 nm to 355 nm), and has the following steps: making a sapphire substrate a growth substrate, and Sequentially stacked AlN buffer layer, n-type AlGaN layer, multiple quantum well layer (MQW), multiple quantum barrier layer (MQB), p-type AlGaN layer, p-type GaN contact layer; prepare a mold for forming reflective two-dimensional photonic crystals ; Two resist layers were spin-coated on the p-type GaN contact layer, and the structure of the above mold was transferred by nanoimprinting; the resist layer with the above structure was transferred as a mask, from the p-type The GaN contact layer is etched by ICP until it does not exceed the position of the interface of the p-type AlGaN layer, and then washed to form a reflective two-dimensional photonic crystal; in addition to the formation of the above-mentioned reflective two-dimensional photonic crystal, it is also by oblique evaporation The p-type reflective electrode (Ni/Au) is sequentially formed; after the p-type reflective electrode (Ni/Au) pattern is formed by the lift-off step, the p-type reflective electrode (Ni/Au) is subjected to high temperature annealing treatment; after the lithography step of forming an insulating film (SiO ₂₎ forming a pattern, forming an insulating film (SiO _2); stripping step by the p-type reflective electrode (Ni / Au) is formed between the patterned insulating film (SiO ₂ at the same height ) Pattern; After forming the p-type wiring electrode (Ti/Au/Ni) pattern by the photolithography step, the p-type wiring electrode (Ti/Au/Ni) is sequentially deposited; the p-type wiring electrode (Ti/Au/Ni) is formed by the peeling step Wiring electrode (Ti/Au/Ni) pattern; film formation of insulating film (SiO ₂ ); patterning of n-type electrode (through hole) formation by photolithography step; formation of through hole by ICP etching until it exceeds multiple quantum wells Layer (MQW) and the interface of the n-type AlGaN layer; forming an insulating film (SiO ₂ ); removing the insulating film (SiO ₂ ) formed on the bottom surface of the through hole by ICP etching, and then tapping the n-type AlGaN layer ; On the insulating film (SiO ₂ ) formed in the above steps and inside the through holes, n-type wiring electrodes (Ti/Al/Ti/Au) are sequentially formed by vapor deposition; and the insulating film ( When the depth from the upper part of SiO ₂ ) to the deepest part of the n-type AlGaN layer excavated in the above step is set to h, the standard of the film thickness t is t>2h; after film formation, the n-type wiring electrode (Ti/ Al/Ti/Au) is subjected to high temperature annealing treatment; the n-type wiring electrode (Ti/Al/Ti/Au) is planarized by polishing or CMP; in the n-type wiring electrode (Ti/Al/Ti/Au) The upper vapor deposition adhesive layer (Au or AuSn); prepare the support substrate (CuMo or CuW) with the support substrate side bonding layer (Au or AuSn) vapor deposited; in the vapor deposition on the n-type wiring electrode (Ti/Al/Ti/ The adhesive layer (Au or AuSn) on top of Au) is bonded to the support substrate (CuMo Or CuW) supporting substrate side bonding layer (Au or AuSn); irradiating an excimer laser or femtosecond laser from the sapphire substrate side to peel the sapphire substrate from the n-type AlGaN layer (laser lift-off: LLO); for the above n-type The AlGaN layer is formed by a photolithography step to form a pattern for element separation; after the SiO ₂ film is formed, a SiO ₂ pattern mask is formed by a lift-off step; excavated by ICP etching until the insulating film (SiO ₂ ) surface is exposed; After the p-type pad electrode formation pattern is formed by the photolithography step, the insulating film (SiO ₂ ) is opened by BHF; after the p-type pad electrode (Ti/Au) is sequentially vapor-deposited, by The stripping step removes the resist to form a p-type pad electrode (Ti/Au) pattern; forms a protective film (SiO ₂ ); and forms p to be covered by the protective film (SiO ₂ ) by a photolithography step The exposed pattern of the type pad electrode (Ti/Au); the opening of the protective film (SiO ₂ ) using BHF; after the p-type pad electrode (Ti/Au) pattern is formed by the lift-off step, it is placed on the support substrate (CuMo Or CuW) vapor deposition on the back side of the backside adhesive layer (Au or AuSn); the above-mentioned support substrate is divided into components; the surface of the protective film (SiO ₂ ) on the n-type AlGaN layer of the divided components, by the atomic diffusion method or The surface activation method joins the quartz hemispherical lens, which is transparent to the wavelength λ above the diameter of the inscribed circle in the plane of the protective film (SiO ₂ ); and the adhesive layer (Au or AuSn) on the back of the above-mentioned element Join the n-type electrode of an aluminum nitride ceramic package containing an inorganic paint coating film with a reflectivity of 91% or more. Similarly, after wiring the p-type electrode and the p-type pad electrode (Ti/Au), apply the nitrogen The upper surface of the aluminum ceramic package is metal-sealed with a quartz window.

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