TW202028828A - Optical member and display apparatus including the same - Google Patents
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- G—PHYSICS
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/02—Optical fibres with cladding with or without a coating
- G02B6/0229—Optical fibres with cladding with or without a coating characterised by nanostructures, i.e. structures of size less than 100 nm, e.g. quantum dots
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
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Abstract
Description
相關申請案之交互參照 本申請案主張於2018年09月10日提出之韓國專利申請案號第10-2018-0107618號及於2019年03月11日提出之韓國專利申請案號第10-2019-0027343號之優先權及效益,出於所有目的,各藉由參考引入的揭露內容如同在本文中闡述。Cross-reference of related applications This application claims the priority of Korean Patent Application No. 10-2018-0107618 filed on September 10, 2018 and Korean Patent Application No. 10-2019-0027343 filed on March 11, 2019 And benefits, for all purposes, the disclosures introduced by reference are as described in this article.
本發明之例示性實施例總體上關於一種光學構件及包含其之顯示設備,且更具體地,是一種具高可靠性的光學構件及包含其之顯示設備。The exemplary embodiment of the present invention generally relates to an optical member and a display device including the same, and more specifically, an optical member with high reliability and a display device including the same.
顯示設備一般包含自發光型顯示設備(self-luminous display apparatus)、反射型顯示設備(reflective display apparatus)以及透射型顯示設備(transmissive display apparatus)。反射型顯示設備包含用於改變光學透射率的顯示面板、以及用於提供光至顯示面板的背光單元。顯示面板控制從背光單元發射的光的透射率(transmittance)以顯示影像。Display devices generally include self-luminous display apparatuses, reflective display apparatuses, and transmissive display apparatuses. The reflective display device includes a display panel for changing optical transmittance, and a backlight unit for supplying light to the display panel. The display panel controls the transmittance of light emitted from the backlight unit to display images.
顯示設備可包含各種不同的光學構件於背光單元中,以改善顯示設備的光學特性,諸如光學效率和色彩還原(color reproduction)特性。另外,為了滿足對具有光學特性良好、厚度薄、高顯示品質的顯示設備之日益增長的需求,顯示設備中可額外加入各種不同的光學構件。The display device may include various optical components in the backlight unit to improve the optical characteristics of the display device, such as optical efficiency and color reproduction characteristics. In addition, in order to meet the increasing demand for display devices with good optical characteristics, thin thickness, and high display quality, various optical components can be additionally added to the display device.
揭露於背景部分之上述資訊僅為了解本發明概念之背景,因此其可包含不構成先前技術之資訊。The above information disclosed in the background part is only for understanding the background of the concept of the present invention, so it may include information that does not constitute the prior art.
根據本發明例示性實施例的光學構件係提供一種薄且具高可靠性的光學構件及包含其之顯示設備。The optical component according to the exemplary embodiment of the present invention provides a thin and highly reliable optical component and a display device including the optical component.
本發明概念的其他特徵將於下述描述中被闡述,且部分地將從描述中顯而易見,或可藉由本發明概念的實踐來得知。Other features of the concept of the present invention will be described in the following description, and part of it will be obvious from the description, or can be learned through the practice of the concept of the present invention.
根據例示性實施例的一種光學構件包含基底基板;設置於基底基板上且具有包含下褶皺(wrinkle)的第一頂表面的量子點層,所述量子點層包含中介層和散佈於中介層中的複數個量子點;設置於基底基板與量子點層之間的下阻障層;以及覆蓋量子點層的上阻障層;其中上阻障層具有第二頂表面,第二頂表面具有對應於量子點層的下褶皺的上褶皺。An optical member according to an exemplary embodiment includes a base substrate; a quantum dot layer disposed on the base substrate and having a first top surface including a lower wrinkle, the quantum dot layer including an interposing layer and being dispersed in the interposing layer A lower barrier layer disposed between the base substrate and the quantum dot layer; and an upper barrier layer covering the quantum dot layer; wherein the upper barrier layer has a second top surface, and the second top surface has a corresponding The upper fold on the lower fold of the quantum dot layer.
上阻障層於基底基板上可具有均勻厚度。The upper barrier layer may have a uniform thickness on the base substrate.
量子點層於基底基板上可具有變化厚度。The quantum dot layer can have a varying thickness on the base substrate.
上阻障層可包含無機層。The upper barrier layer may include an inorganic layer.
上褶皺可以複數形式提供於第二頂表面上;以及當在平面圖中觀看時,複數個上褶皺的至少一個可具有曲線(curvilinear)形狀。The upper wrinkles may be provided on the second top surface in plural forms; and when viewed in a plan view, at least one of the plurality of upper wrinkles may have a curvilinear shape.
上褶皺的至少兩個係可彼此互相連接。At least two lines of the upper folds can be connected to each other.
曲線形狀可包含閉環(closed loop)形狀。The curve shape may include a closed loop shape.
上褶皺可包含第一褶皺和第二褶皺,第一褶皺具有第一閉環形狀,且第二褶皺具有不同於第一閉環形狀的第二閉環形狀。The upper pleat may include a first pleat and a second pleat, the first pleat has a first closed loop shape, and the second pleat has a second closed loop shape different from the first closed loop shape.
第一褶皺和第二褶皺可彼此互相連接。The first fold and the second fold may be connected to each other.
各上褶皺可具有可約為1μm或更少的垂直厚度。Each upper fold may have a vertical thickness that may be about 1 μm or less.
上褶皺之間的距離可小於100µm。The distance between the upper folds can be less than 100 µm.
光學構件可進一步包含設置於基底基板與下阻障層之間,且具有1.5或更小的折射指數的低折射層。The optical member may further include a low refractive layer disposed between the base substrate and the lower barrier layer and having a refractive index of 1.5 or less.
基底基板可包含玻璃基板。The base substrate may include a glass substrate.
光學構件可進一步包含含有有機材料且設置於上阻障層上的覆蓋層;其中覆蓋層係可覆蓋第二頂表面且具有平坦頂表面(flat top surface)。The optical member may further include a cover layer containing an organic material and disposed on the upper barrier layer; wherein the cover layer may cover the second top surface and have a flat top surface.
根據另一例示性實施例的一種顯示設備,其包含:配置以發光的光源;具有面向光源的入射表面的光學構件;以及設置於光學構件上且包含複數個畫素的顯示面板;其中光學構件包含:基底基板,所述基底基板包含面向顯示面板的頂表面、相對於頂表面的底表面、以及將頂表面連接至底表面的複數個側表面,側表面中的至少一個包含入射表面;設置於基底基板上的下阻障層,下阻障層具有平坦頂表面;設置於下阻障層上的上阻障層,上阻障層具有複數個褶皺形成於其上的褶皺頂表面(wrinkled top surface);以及設置於下阻障層與上阻障層之間的量子點層,量子點層包含介質層和複數個量子點,複數個量子點散佈於介質層中;其中在平面圖中觀看時,褶皺具有曲線形狀。A display device according to another exemplary embodiment includes: a light source configured to emit light; an optical member having an incident surface facing the light source; and a display panel provided on the optical member and including a plurality of pixels; wherein the optical member Comprising: a base substrate including a top surface facing the display panel, a bottom surface opposite to the top surface, and a plurality of side surfaces connecting the top surface to the bottom surface, at least one of the side surfaces including an incident surface; The lower barrier layer on the base substrate, the lower barrier layer has a flat top surface; the upper barrier layer disposed on the lower barrier layer, the upper barrier layer has a wrinkled top surface on which a plurality of folds are formed (wrinkled top surface); and a quantum dot layer disposed between the lower barrier layer and the upper barrier layer, the quantum dot layer includes a dielectric layer and a plurality of quantum dots, and the plurality of quantum dots are scattered in the dielectric layer; which is viewed in plan view When the wrinkles have a curved shape.
在平面圖中觀看時,褶皺可包含第一褶皺和第二褶皺,第一褶皺具有第一形狀,第二褶皺具有不同於第一形狀的第二形狀。When viewed in a plan view, the wrinkles may include a first wrinkle and a second wrinkle, the first wrinkle having a first shape, and the second wrinkle having a second shape different from the first shape.
第一褶皺和第二褶皺可彼此互相連接。The first fold and the second fold may be connected to each other.
介質層的頂表面可具有褶皺形狀,所述褶皺形狀不同於基底基板的頂表面的形狀。The top surface of the dielectric layer may have a wrinkle shape that is different from the shape of the top surface of the base substrate.
介質層於基底基板上可具有不均勻厚度;以及上阻障層於基底基板上可具有均勻厚度。The dielectric layer may have an uneven thickness on the base substrate; and the upper barrier layer may have a uniform thickness on the base substrate.
上阻障層可包含無機層。The upper barrier layer may include an inorganic layer.
基底基板可包含玻璃基板。The base substrate may include a glass substrate.
顯示設備可進一步包含設置於基底基板與量子點層之間,且具有小於1.5的折射指數的低折射層。The display device may further include a low-refractive layer disposed between the base substrate and the quantum dot layer and having a refractive index less than 1.5.
顯示設備可進一步包含設置於上阻障層上且覆蓋上阻障層的頂表面的覆蓋層;其中覆蓋層可具有平坦頂表面,所述平坦頂表面具有不同於上阻障層的頂表面的形狀。The display device may further include a cover layer disposed on the upper barrier layer and covering the top surface of the upper barrier layer; wherein the cover layer may have a flat top surface, the flat top surface having a difference from the top surface of the upper barrier layer shape.
顯示面板係可沿著在一個方向延伸的軸彎曲。The display panel can be bent along an axis extending in one direction.
應當理解的是,上面的概括描述以及下面的詳細描述皆是例示性與說明性的,且旨在提供所主張之發明的進一步說明。It should be understood that the above general description and the following detailed description are both exemplary and illustrative, and are intended to provide further explanation of the claimed invention.
出於解釋之目的,下述將列舉諸多具體細節以提供對本發明各種例示性實施例或實施方式透徹的理解。如本文所使用的「實施例(embodiments)」與「實施方式(implementations)」是可互換的詞,其是使用本文揭露之一個或多個發明概念的裝置或方法的非限制性實例。然而,顯而易見的是,可在沒有這些具體細節或一個或多個等效佈置的情況下實踐各種例示性實施例。在其它實例中,以方塊圖的形式表示已知的結構和裝置,以避免不必要的混淆各種例示性實施例。另外,各種例示性實施例可以是不同的,但未必是排他的(exclusive)。例如,在不脫離本發明概念的情況下,可在一例示性實施例中使用或實施另一例示性實施例的特定形狀、配置以及特性。For the purpose of explanation, many specific details will be listed below to provide a thorough understanding of various exemplary embodiments or implementations of the present invention. As used herein, "embodiments" and "implementations" are interchangeable words, which are non-limiting examples of devices or methods that use one or more of the inventive concepts disclosed herein. However, it is apparent that various exemplary embodiments may be practiced without these specific details or one or more equivalent arrangements. In other instances, well-known structures and devices are represented in the form of block diagrams to avoid unnecessary confusion of the various exemplary embodiments. In addition, the various exemplary embodiments may be different, but are not necessarily exclusive. For example, without departing from the concept of the present invention, a specific shape, configuration, and characteristic of another exemplary embodiment may be used or implemented in an exemplary embodiment.
除非另有說明,否則所表示的例示性實施例應被理解為在實際上提供可實施本發明概念的一些方式的不同細節的例示性特徵。因此,除非另有說明,否則在不脫離本發明概念的情況下,各種實施例的特徵、部件、模組、層、薄膜、面板、區域(region)及/或態樣等(在下文中,分別或共同稱為「元件(elements)」),可另外被組合、分離、互換及/或重新佈置。Unless otherwise stated, the illustrative embodiments presented should be understood as illustrative features that in fact provide different details of some of the ways in which the inventive concept may be implemented. Therefore, unless otherwise specified, the features, components, modules, layers, films, panels, regions and/or aspects of various embodiments (hereinafter, respectively, without departing from the concept of the present invention) (Or collectively referred to as "elements"), which can be combined, separated, interchanged, and/or rearranged.
在所附圖式中,廣泛地提供交叉影線及/或陰影,以闡明相鄰元件之間的邊界。因此,除非另有說明,否則交叉影線或陰影的存在與否皆不表達或指示對元件的特定材料、材料特性、尺寸、比例、所示元件之間的共同性及/或任何其它特徵、屬性、性質等的任何偏好或需求。另外,在所附圖式中,為了清楚及/或敘述性的理由,可誇大元件尺寸以及相對尺寸。當可以不同地實施例示性實施例時,可以不同於所描述的順序執行特定製程順序。例如,兩個連續描述的製程可以實質上同時執行、或者以與所描述的順序相反的順序執行。另外,相似的元件符號代表相似的元件。In the drawings, cross-hatching and/or shading are widely provided to clarify the boundaries between adjacent elements. Therefore, unless otherwise stated, the presence or absence of cross-hatching or shading does not express or indicate the specific material, material characteristics, size, ratio, commonality between the elements shown and/or any other features, Any preference or demand for attributes, nature, etc. In addition, in the accompanying drawings, for reasons of clarity and/or description, the size and relative size of the elements may be exaggerated. When the exemplary embodiments may be implemented differently, the specific process sequence may be performed in a different order than described. For example, two consecutively described processes may be performed substantially simultaneously or in an order opposite to the described order. In addition, similar component symbols represent similar components.
當諸如層的元件被指為「在」另一元件或層「上(on)」、「連接至(connected to)」或「耦接至(coupled to)」另一元件或層時,其可直接在其它元件或層上、直接連接至或耦接至其它元件或層,或可存在中間元件或層。然而,當元件或層被指「直接在」另一元件或層「上(directly on)」、「直接連接至(directly connected to)」或「直接耦接至(directly coupled to)」另一元件或層時,則不存在中間元件或層。因此,用語「連接(connected)」可以指在具有或不具有中間元件的情況下,物理上、電性上及/或流體的連接。另外,D1軸、D2軸以及D3軸不限於直角坐標系統的三個軸,諸如x、y以及z軸,且可在更廣泛的意義上解釋。例如,D1軸、D2軸以及D3軸可彼此垂直,或可表示彼此不垂直的不同方向。對於本揭露之目的,「X、Y及Z之其中至少一個(at least one of X, Y, and Z)」和「選自由X、Y及Z所組成的群組之中至少一個(at least one selected from the group consisting of X, Y, and Z)」可被理解為僅有X、僅有Y、僅有Z、或X、Y及Z之其中兩個或兩個以上的任意組合,例如XYZ、XYY、YZ、及ZZ。如用於本文中,用語「及/或(and/or)」包含一個或一個以上所列的相關項目之任意及所有組合。When an element such as a layer is referred to as being “on”, “connected to” or “coupled to” another element or layer, it may It is directly on other elements or layers, directly connected to or coupled to other elements or layers, or intervening elements or layers may be present. However, when an element or layer is referred to as "directly on", "directly connected to" or "directly coupled to" another element or layer Or layers, there are no intermediate elements or layers. Therefore, the term "connected" can refer to a physical, electrical, and/or fluid connection with or without intermediate components. In addition, the D1 axis, D2 axis, and D3 axis are not limited to the three axes of the rectangular coordinate system, such as x, y, and z axes, and can be interpreted in a broader sense. For example, the D1 axis, D2 axis, and D3 axis may be perpendicular to each other, or may represent different directions that are not perpendicular to each other. For the purpose of this disclosure, "at least one of X, Y, and Z (at least one of X, Y, and Z)" and "at least one of the group consisting of X, Y, and Z (at least one selected from the group consisting of X, Y, and Z)" can be understood as X only, Y only, Z only, or any combination of two or more of X, Y, and Z, for example XYZ, XYY, YZ, and ZZ. As used in this article, the term "and/or" includes any and all combinations of one or more of the related items listed.
雖然可以在本文中以「第一(first)」、「第二(second)」等用語來描述各種類型的元件,這些元件不應該被這些用語所限制。這些用語僅用來區分一個元件與另一個元件。因此,如下所述之第一元件可稱為第二元件,而不脫離本揭露之教示。Although various types of elements can be described in terms of "first", "second", etc., these elements should not be limited by these terms. These terms are only used to distinguish one element from another. Therefore, the first element described below can be referred to as the second element without departing from the teachings of the present disclosure.
為了說明的目的,可在本文中使用空間相關的用語,例如「之下(beneath)」、「下方(below)」、「下面(under)」、「下部(lower)」、「上方(above)」、「上部(upper)」、「之上(over)」、「高於(higher)」、「側邊(side)」(例如,「側壁(sidewall)」)以及其它相似用語,且從而來描述圖式中所繪示之元件與另一元件的關係。除了圖式中描繪的定向(orientation)之外,空間相關的用語旨在包含在使用、操作及/或製造中的裝置之不同定向。例如,若將圖式中的裝置翻轉,描述在其它元件或特徵「下方(below)」或「之下(beneath)」的元件將被定向為在其它元件或特徵的「上方(above)」。因此,例示性用語「下方(below)」可同時包含上方與下方的定向。另外,裝置可轉向其它定向(例如,旋轉90度或其他定向),而在本文使用的空間相關描述用語應據此作相對應的解釋。For illustrative purposes, you can use space-related terms in this article, such as "beneath", "below", "under", "lower", "above" "", "upper", "over", "higher", "side" (for example, "sidewall") and other similar terms, and thus Describe the relationship between the element shown in the drawing and another element. In addition to the orientation depicted in the drawings, spatially related terms are intended to encompass different orientations of the device in use, operation, and/or manufacturing. For example, if the device in the drawing is turned over, elements described "below" or "beneath" other elements or features will be oriented "above" of other elements or features. Therefore, the exemplary term "below" can include both above and below orientations. In addition, the device can be turned to other orientations (for example, rotated 90 degrees or other orientations), and the space-related description terms used herein should be interpreted accordingly.
在本文所用之用語係僅為描述特定實施例之目的,而非旨在用於限制本發明。使用於本文時,除非文中另行明確地表示,否則「一(a)」、「一(an)」、「該(the)」之單數型式亦旨在包含複數型式。再者,當用語「包含(comprises)」、「包含(comprising)」、「包含(includes)」以及「包含(including)」用於此說明書中時,係指明所述特徵、整體、步驟、操作、元件、部件及/或其群組的存在,但是不排除一個或更多其它特徵、整體、步驟、操作、元件、部件及/或其群組的存在或增添。需注意的是,如本文所使用之用語「實質上(substantially)」、「大約(about)」及其他相似用語,是用作為近似用語而不是作為程度用語,且旨在解釋本領域通常知識者所識別的在經測量、經計算、及/或經提供的數值的固有偏差(inherent deviation)。The terms used herein are only for the purpose of describing specific embodiments and are not intended to limit the present invention. When used in this article, unless expressly stated otherwise in the text, the singular forms of "一(a)", "一(an)" and "the (the)" are also intended to include plural forms. Furthermore, when the terms "comprises", "comprising", "includes" and "including" are used in this specification, they indicate the features, wholes, steps, and operations. The existence or addition of elements, components and/or groups thereof does not exclude the existence or addition of one or more other features, wholes, steps, operations, elements, components and/or groups thereof. It should be noted that the terms "substantially", "about" and other similar terms used in this article are used as approximate terms rather than as degree terms, and are intended to explain those who are generally knowledgeable in the field The identified inherent deviation from the measured, calculated, and/or provided value.
本文中,參照示意圖描述理想化的例示性實施例及/或中間結構的剖面圖及/或爆炸圖來說明各種例示性實施例。因此,可以預期例如製造技術及/或公差而導致的與所繪示形狀之間的差異。因此,本文揭露的例示性實施例不需要以限於所示區域的特定形狀來解釋,而是包含由例如製造產生的形狀偏差。在此情況中,圖式中所示的區域本質上(in nature)是示意性的,且這些區域的形狀並不反映裝置的區域的實際形狀,且不需要旨在限制。Herein, various exemplary embodiments are described with reference to schematic diagrams to describe idealized exemplary embodiments and/or cross-sectional views and/or exploded views of intermediate structures. Therefore, the difference between the illustrated shape and the shape caused by, for example, manufacturing technology and/or tolerance can be expected. Therefore, the exemplary embodiments disclosed herein do not need to be explained in a specific shape limited to the shown area, but include shape deviations caused by, for example, manufacturing. In this case, the areas shown in the drawings are schematic in nature, and the shape of these areas does not reflect the actual shape of the area of the device, and is not intended to be limiting.
除非另有界定,否則本文所用之所有用語(包含技術與科學用語)具有與本領域通常知識者所通常理解的相同含義。諸如那些界定於常用字典內之用語,應被解釋為具有與其在相關技術的內容中的其之意義相符之意義,且除非明確地定義於此,否則不應以理想化或過於正式的意義解釋。Unless otherwise defined, all terms used in this article (including technical and scientific terms) have the same meanings as commonly understood by those skilled in the art. Terms such as those defined in commonly used dictionaries should be interpreted as having meanings consistent with their meanings in the content of the relevant technology, and unless they are clearly defined here, they should not be interpreted in an idealized or overly formal sense. .
第1圖係為根據例示性實施例之顯示設備的分解透視圖。第2圖係為第1圖之顯示設備的示意性剖面圖。第3A圖係為根據例示性實施例之背光單元的示意性剖面圖。第3B圖係為根據例示性實施例之背光單元的示意性剖面圖。於下文中,將參照第1圖至第3B圖以描述根據本發明概念的例示性實施例的顯示設備。Figure 1 is an exploded perspective view of a display device according to an exemplary embodiment. Figure 2 is a schematic cross-sectional view of the display device of Figure 1. FIG. 3A is a schematic cross-sectional view of a backlight unit according to an exemplary embodiment. FIG. 3B is a schematic cross-sectional view of a backlight unit according to an exemplary embodiment. Hereinafter, a display device according to an exemplary embodiment of the inventive concept will be described with reference to FIGS. 1 to 3B.
如第1圖所示,顯示設備DA可包含顯示面板100、背光單元BLU、上保護構件410、下保護構件420和光學薄膜500。背光單元BLU可包含光源200和光學構件300。As shown in FIG. 1, the display device DA may include a
顯示面板100可接收電子訊號且基於所接收的電子訊號顯示影像。使用者可接收從顯示設備DA的顯示面板100提供的影像資訊。顯示面板100可包含與第一方向DR1和第二方向DR2界定的平面實質上平行的顯示表面IS。顯示表面IS可包含主動區域AA和周邊區域NAA。顯示面板100可在實質上垂直於第三方向DR3的主動區域AA上顯示影像。主動區域AA可由電子訊號選擇性地產生作用(activated)。顯示面板100可包含設置於主動區域AA中的複數個畫素PX。The
周邊區域NAA可相鄰於主動區域AA。在例示性實施例中,周邊區域NAA可密封(enclose)主動區域AA。向畫素PX提供電子訊號的各種驅動電路,或從外部裝置接收電子訊號的焊墊,可設置於周邊區域NAA中。The peripheral area NAA may be adjacent to the active area AA. In an exemplary embodiment, the peripheral area NAA may enclose the active area AA. Various driving circuits that provide electronic signals to the pixel PX, or solder pads that receive electronic signals from external devices, can be set in the peripheral area NAA.
第2圖係例示性地表示顯示面板100的區域,在其中設置一個畫素PX。於下文中,顯示面板100將參照第2圖進行描述。FIG. 2 exemplarily shows the area of the
顯示面板100可包含第一基板110、第二基板120和液晶層LCL。第一基板110可包含第一基底層S1、畫素PX和複數個絕緣層。如第2圖所示,絕緣層可包含依序在第三方向DR3上堆疊的第一絕緣層10、第二絕緣層20和第三絕緣層30。The
第一基底層S1可由絕緣材料組成或包含絕緣材料。例如,第一基底層S1可由玻璃或塑膠材料中的至少一種組成,或包含玻璃或塑膠材料中的至少一種。The first base layer S1 may be composed of or include an insulating material. For example, the first base layer S1 may be composed of at least one of glass or plastic material, or include at least one of glass or plastic material.
畫素PX可包含薄膜電晶體TR和畫素電極PE。薄膜電晶體TR可包含半導體圖案AL、控制電極CE、輸入電極IE和輸出電極OE。半導體圖案AL可設置於第一基底層S1與第一絕緣層10之間。半導體圖案AL可由半導體材料形成或包含半導體材料。例如,半導體材料可包含非晶矽(amorphous silicon)、多晶矽(poly silicon)、單晶矽(single-crystalline silicon)、氧化物半導體(oxide semiconductors)或化合物半導體(compound semiconductors)中的至少一種。在一些例示性實施例中,畫素PX可包含複數個薄膜電晶體,其之半導體材料係彼此相同或不同,但是本發明概念不限於此。The pixel PX may include a thin film transistor TR and a pixel electrode PE. The thin film transistor TR may include a semiconductor pattern AL, a control electrode CE, an input electrode IE, and an output electrode OE. The semiconductor pattern AL may be disposed between the first base layer S1 and the first insulating
控制電極CE可設置於第一絕緣層10與第二絕緣層20之間。控制電極CE可與半導體圖案AL間隔開,且第一絕緣層10插設於其之間(interposed therebetween)。The control electrode CE may be disposed between the first insulating
輸入電極IE和輸出電極OE可設置於第二絕緣層20與第三絕緣層30之間。輸入電極IE和輸出電極OE可彼此間隔開。各輸入和輸出電極IE和OE可穿透第一絕緣層10和第二絕緣層20,且可耦接至半導體圖案AL。The input electrode IE and the output electrode OE may be disposed between the second insulating
畫素電極PE可連接至薄膜電晶體TR。畫素電極PE、共用電極CME和液晶層LCL可形成液晶電容器CLC。在液晶電容器CLC中,產生於畫素電極PE和共用電極CME之間的電場,可用於控制液晶分子在液晶層LCL中的定向(orientation),進而控制液晶層LCL的光學透射率(optical transmittance)。從畫素PX發射的光強度可藉由液晶層LCL的光學透射率來決定(determined)。The pixel electrode PE may be connected to the thin film transistor TR. The pixel electrode PE, the common electrode CME, and the liquid crystal layer LCL may form a liquid crystal capacitor CLC. In the liquid crystal capacitor CLC, the electric field generated between the pixel electrode PE and the common electrode CME can be used to control the orientation of liquid crystal molecules in the liquid crystal layer LCL, thereby controlling the optical transmittance of the liquid crystal layer LCL . The intensity of light emitted from the pixel PX can be determined by the optical transmittance of the liquid crystal layer LCL.
畫素電極PE可設置於第三絕緣層30上。畫素電極PE可穿透第三絕緣層30,且可耦接至薄膜電晶體TR。若電子訊號的閘極訊號施加於控制電極CE,薄膜電晶體TR可導通(turned on);在此情況下,若電子訊號的資料訊號施加於輸入電極IE,可透過處於導通狀態的薄膜電晶體TR,資料訊號傳送至輸出電極OE和畫素電極PE。The pixel electrode PE may be disposed on the third insulating
第二基板120可包含第二基底層S2、濾色層CF、外塗(over-coat)層CC和共用電極CME。第二基底層S2可由絕緣材料組成,或包含絕緣材料。第二基底層S2可由例如玻璃或塑膠材料的至少一種形成,或包含玻璃或塑膠材料的至少一種。The
第二基底層S2可包含面向第一基底層S1的後表面、和面向後表面的前表面。前表面的至少一部分可用作顯示表面IS(例如,參照第1圖)。濾色層CF和共用電極CME可設置於第二基底層S2的後表面。The second base layer S2 may include a rear surface facing the first base layer S1, and a front surface facing the rear surface. At least a part of the front surface can be used as the display surface IS (for example, refer to FIG. 1). The color filter layer CF and the common electrode CME may be disposed on the rear surface of the second base layer S2.
濾色層CF可以包含黑矩陣BM和顏色圖案CP。黑矩陣BM可阻擋入射於黑矩陣BM上的光。例如,黑矩陣BM可覆蓋顯示光的畫素區域周圍的區域,進而界定畫素區域且防止光透過畫素區域周圍的區域洩漏。The color filter layer CF may include a black matrix BM and a color pattern CP. The black matrix BM can block light incident on the black matrix BM. For example, the black matrix BM can cover the area around the pixel area displaying light, thereby defining the pixel area and preventing light from leaking through the area around the pixel area.
顏色圖案CP可設置相鄰於黑矩陣BM。顏色圖案CP可重疊於畫素PX的畫素電極PE。在例示性實施例中,複數個顏色圖案CP可分別提供於畫素區域上。各畫素區域可為由液晶電容器CLC控制且對應於畫素電極PE的區域。The color pattern CP may be arranged adjacent to the black matrix BM. The color pattern CP may overlap the pixel electrode PE of the pixel PX. In an exemplary embodiment, a plurality of color patterns CP may be respectively provided on the pixel area. Each pixel area may be an area controlled by the liquid crystal capacitor CLC and corresponding to the pixel electrode PE.
顏色圖案CP可允許光穿過於其中(passing therethrough),以具有特定波長或顏色。顏色圖案CP可包含染料、顏料、有機螢光材料和無機螢光材料的至少一種。在例示性實施例中,濾色層CF可設置於第一基底層S1上以形成第一基板110。可代替地,在一些例示性實施例中,濾色層CF可予以省略。濾色層CF的形狀可有各種變化,且發明概念不限於濾色層CF的特定形狀。The color pattern CP may allow light to pass therethrough to have a specific wavelength or color. The color pattern CP may include at least one of dyes, pigments, organic fluorescent materials, and inorganic fluorescent materials. In an exemplary embodiment, the color filter layer CF may be disposed on the first base layer S1 to form the
外塗層CC可覆蓋濾色層CF。外塗層CC可由絕緣材料形成或包含絕緣材料。外塗層CC可覆蓋濾色層CF的後表面,且可為共用電極CME提供平坦表面。在一些例示性實施例中,外塗層CC可從顯示面板100中省略。The overcoat layer CC may cover the color filter layer CF. The overcoat CC may be formed of or contain an insulating material. The overcoat layer CC can cover the back surface of the color filter layer CF and can provide a flat surface for the common electrode CME. In some exemplary embodiments, the overcoat CC may be omitted from the
共用電極CME可與畫素電極PE一起產生電場。在本例示性實施例中,共用電極CME可設置於第二基底層S2的後表面上,且可於複數個畫素上形成。然而,本發明概念不限於此,且在一些例示性實施例中,共用電極CME可形成為複數個圖案,其分別提供於畫素區域上。在其它例示性實施例中,共用電極CME可設置於第一基底層S1上,以形成第一基板110。第2圖係顯示畫素電極PE具有無縫隙(slit-free)形狀,然而,在一些例示性實施例中,顯示面板100的共用電極CME和畫素電極PE中的至少一個可具有複數個縫隙。The common electrode CME can generate an electric field together with the pixel electrode PE. In this exemplary embodiment, the common electrode CME may be disposed on the rear surface of the second base layer S2, and may be formed on a plurality of pixels. However, the concept of the present invention is not limited to this, and in some exemplary embodiments, the common electrode CME may be formed as a plurality of patterns, which are respectively provided on the pixel area. In other exemplary embodiments, the common electrode CME may be disposed on the first base layer S1 to form the
液晶層LCL可包含液晶分子。液晶分子可具有化學結構,所述化學結構的定向可藉由畫素電極PE與共用電極CME之間產生的電場來控制。液晶層LCL的光學透射率實質上可由液晶分子的定向控制。The liquid crystal layer LCL may include liquid crystal molecules. The liquid crystal molecules can have a chemical structure, and the orientation of the chemical structure can be controlled by the electric field generated between the pixel electrode PE and the common electrode CME. The optical transmittance of the liquid crystal layer LCL can be substantially controlled by the orientation of the liquid crystal molecules.
第3A圖係表示第1圖的背光單元BLU的示意性剖面圖。根據例示性實施例,如第3B圖所示,背光單元BLU-1可進一步包含其他元件。首先,背光單元BLU將參照第1圖和第3A圖來描述。Fig. 3A is a schematic cross-sectional view showing the backlight unit BLU of Fig. 1. According to an exemplary embodiment, as shown in FIG. 3B, the backlight unit BLU-1 may further include other elements. First, the backlight unit BLU will be described with reference to FIGS. 1 and 3A.
背光單元BLU可將光提供至顯示面板100。顯示面板100可控制各畫素PX中的光透射率以顯示影像。在例示性實施例中,顯示面板100可為透射型顯示面板(transmissive-type display panel)。The backlight unit BLU can provide light to the
光源200可產生光,且在橫向(lateral)方向上向光學構件300提供光。光源200可包含電路基板210和複數個發光元件220。電路基板210可為在第一方向DR1上拉長的(elongated)板形結構(plate-shaped structure),且可具有在第一和第三方向DR1和DR3分別測量的長度和寬度。電路基板210可包含絕緣基板和裝設於絕緣基板上的電路線。電路線可用於將電子訊號從外部傳送至發光元件220,或將發光元件220彼此互相電性連接。The
各發光元件220可產生光。發光元件220可設置於電路基板210上,且可電性連接至電路基板210。發光元件220可在電路基板210的長度方向上彼此間隔開。如第1圖所示,根據例示性實施例,發光元件220可在第一方向DR1上配置以形成單列(row)。Each light-emitting
光學構件300可為實質上平行於顯示面板100的板形元件。光學構件300可被設置,以讓其之頂表面300-S(參照第1圖)面向顯示面板100。The
光學構件300可從光源200接收光,且將光提供至顯示面板100。光學構件300可控制從光源200發出的光的傳播(propagation)路徑,以使光可均勻地射入至顯示面板100上。The
在例示性實施例中,光學構件300可將入射光轉換為白光。在此情況下,即使光源200產生非白色(例如藍色)光,透過光學構件300提供至顯示面板100的光可為白色。更具體地說,光學構件300可作為導光板(light guide plate)和光轉換構件(light conversion member)。在此情況下,作為單一結構提供的光學構件300可用於代換導光板和光轉換構件之兩者,其可減少顯示設備DA的總厚度,且精簡顯示設備DA的裝配過程。In an exemplary embodiment, the
光學構件300可包含基底基板310和量子點單元320。基底基板310可包含面向光源200的入射表面SF1。如第3A圖所示,基底基板310的側表面之一可用作入射表面SF1,但本發明概念不限於此。例如,基底基板310的側表面的至少兩個可用作入射表面SF1。The
基底基板310可由絕緣材料組成或包含絕緣材料。例如,基底基板310可由玻璃形成或包含玻璃。The
基底基板310可配置以允許入射通過入射表面SF1的光朝向基底基板310的頂表面傳播。例如,入射光可沿實質上平行於第二方向DR2的初始路徑傳播,且基底基板310可沿實質上平行於第三方向DR3的方向改變傳播路徑。實質上可由基底基板310實現光學構件300的光導引功能。The
量子點單元320可設置於基底基板310上。量子點單元320可包含量子點層321、下阻障層322和上阻障層323。量子點層321可包含複數個量子點。量子點層321可改變入射至其的光波長。The
下阻障層322和上阻障層323可密封量子點層321。下阻障層322可設置於量子點層321與基底基板310之間,以保護量子點層321免受底層(underlying)元件的影響,且防止外部濕氣或水進入量子點層321。上阻障層323可設置於量子點層321上,以覆蓋量子點層321的頂表面。上阻障層323可保護量子點層321免受其上元件的影響,且防止外部濕氣或水進入量子點層321。The
各下和上阻障層322和323可以由無機材料形成,或包含無機材料。例如,各下和上阻障層322和323可包含金屬氧化物或金屬氮化物中的至少一個。更具體地說,各下和上阻障層322和323可由氧化矽(silicon oxide)、氮化矽(silicon nitride)、氮氧化矽(silicon oxynitride)、氧化鈦(titanium oxide)或其任何組合中的至少一個形成,或包含氧化矽、氮化矽、氮氧化矽、氧化鈦或其任何組合中的至少一個材料。然而,本發明概念不限於此,只要上和下阻障層322和323可密封量子點層321,各種無機材料可用作下和上阻障層322和323中的至少一個。在例示性實施例中,下和上阻障層322和323可獨立形成。因此,下和上阻障層322和323可由相同的材料或不同的材料形成,或可包含相同的材料或不同的材料。Each of the lower and upper barrier layers 322 and 323 may be formed of an inorganic material, or contain an inorganic material. For example, each of the lower and upper barrier layers 322 and 323 may include at least one of metal oxide or metal nitride. More specifically, each of the lower and upper barrier layers 322 and 323 may be made of silicon oxide, silicon nitride, silicon oxynitride, titanium oxide, or any combination thereof. At least one of is formed of, or includes at least one of silicon oxide, silicon nitride, silicon oxynitride, titanium oxide, or any combination thereof. However, the inventive concept is not limited thereto, as long as the upper and lower barrier layers 322 and 323 can seal the
在第3A圖中,下和上阻障層322和323說明為暴露量子點層321的側表面。然而,本發明概念不限於此,且在一些例示性實施例中,量子點層321的側表面可被下和上阻障層322和323中的至少一個覆蓋,且不會暴露於外部。In FIG. 3A, the lower and upper barrier layers 322 and 323 are illustrated as exposing the side surface of the
現在,參照第3B圖,背光單元BLU-1可進一步包含低折射層330。低折射層330可設置於基底基板310與量子點單元320之間。低折射層330可覆蓋基底基板310的頂表面。Now, referring to FIG. 3B, the backlight unit BLU-1 may further include a low
低折射層330可具有低於基底基板310的折射指數。例如,低折射層330可具有低於約1.5的折射指數。低折射層330可提高基底基板310的導光特性。The low
參照第1圖,上保護構件410可設置於顯示面板100上以覆蓋顯示面板100。上保護構件410可包含露出顯示面板100的至少一部分的開口410-OP。例如,開口410-OP可至少暴露顯示面板100的主動區域AA,以使使用者可辨識主動區域AA上顯示影像的一部分(例如,穿過開口410-OP)。在例示性實施例中,顯示設備DA可進一步包含設置於開口410-OP中的透明保護構件。可代替地,上保護構件410可為光學透明的。在此情況下,開口410-OP可予以省略。Referring to FIG. 1, the
下保護構件420可與上保護構件410結合,以保護顯示面板100和背光單元BLU。下保護構件420可包含底部部分420-B和側壁部分420-W。底部部分420-B的面積可等於或大於顯示面板或/及光學構件300的面積。側壁部分420-W可連接至底部部分420-B,且可從底部部分420-B實質上在第三方向DR3彎曲。底部部分420-B及側壁部分420-W可界定內部空間420-SS。顯示面板100和背光單元BLU可設置於內部空間420-SS,且可防止受到外部衝擊。The
光學薄膜500可設置於顯示面板100與光學構件300之間。光學薄膜500可配置以允許將從光學構件300發射的光入射至顯示面板100,進而具有經改善的效率或經改善的空間均勻性。光學薄膜500可包含單個片材或複數個片材。例如,光學薄膜500可包含至少一個網狀(reticular)片材、棱鏡(prism)片材和散射片材。在一些例示性實施例中,光學薄膜500可從顯示設備DA省略。The
第4圖係繪示根據例示性實施例之光學構件的分解透視圖。第5A圖係繪示根據例示性實施例之光學構件的一部分的剖面圖。第5B圖係顯示根據例示性實施例之光學構件的一部分的影像。為了便於說明,基底基板310和量子點單元320分別如第4圖所示。第4圖的量子點單元320的區域係表示於第5A圖。於下文中,將參照第4圖至第5B圖描述根據例示性實施例的光學構件。FIG. 4 is an exploded perspective view of an optical component according to an exemplary embodiment. FIG. 5A is a cross-sectional view of a part of an optical component according to an exemplary embodiment. FIG. 5B shows an image of a part of an optical member according to an exemplary embodiment. For ease of description, the
基底基板310可包含頂表面SF-U、底表面SF-L和複數個側表面。可設置基底基板310,以使頂表面SF-U面向顯示面板100(例如,參照第1圖)。量子點單元320可設置於頂表面SF-U上。相對於(opposite to)頂表面SF-U的底表面SF-L可為面向下保護構件420的底部部分420-B的表面(例如,參照第1圖)。The
側表面可包含第一側表面SF1、第二側表面SF2、第三側表面SF3和第四側表面SF4。各第一和第二側表面SF1和SF2可實質上平行於由第一和第三方向DR1和DR3界定的平面,且在第二方向DR2上可彼此面對。各第三和第四側表面SF3和SF4可實質上平行於由第二和第三方向DR2和DR3界定的平面,且在第一方向DR1上可彼此面對。The side surface may include a first side surface SF1, a second side surface SF2, a third side surface SF3, and a fourth side surface SF4. Each of the first and second side surfaces SF1 and SF2 may be substantially parallel to a plane defined by the first and third directions DR1 and DR3, and may face each other in the second direction DR2. Each of the third and fourth side surfaces SF3 and SF4 may be substantially parallel to a plane defined by the second and third directions DR2 and DR3, and may face each other in the first direction DR1.
如上所述,第一側表面SF1、第二側表面SF2、第三側表面SF3和第四側表面SF4的至少一個可放置成面對光源200(例如,參照第1圖),且可用作入射表面。於下文中,第一側表面SF1將描述為入射表面。As described above, at least one of the first side surface SF1, the second side surface SF2, the third side surface SF3, and the fourth side surface SF4 may be placed to face the light source 200 (for example, refer to FIG. 1), and may be used as Incident surface. Hereinafter, the first side surface SF1 will be described as an incident surface.
量子點單元320可包含在第三方向DR3上堆疊的下阻障層322、量子點層321和上阻障層323。下阻障層322可設置於基底基板310上。下阻障層322的頂表面322-S(下文簡稱「LBL頂表面(LBL top surface)」)可具有對應於設置於其下之基底基板310的頂表面的形狀。在本例示性實施例中,相較於上阻障層323的頂表面323-S(下文簡稱「UBL頂表面(UBL top surface)」),LBL頂表面322-S可為實質上平坦的。The
量子點層321可包含介質層MX、複數個量子點PT1和PT2以及散射粒子SP。量子點PT1和PT2和散射粒子SP可分散於介質層MX中。The
介質層MX可由各種樹脂組合物組成,通常稱為黏合劑(binder)。例如,介質層MX可由聚合物樹脂形成,或包含聚合物樹脂。更具體地說,介質層MX可由丙烯酸樹脂(acrylic resin)、聚氨酯樹脂(urethane resin)、矽樹脂(silicone resin)和環氧樹脂(epoxy resin)中的至少一種形成,或包含丙烯酸樹脂、聚氨酯樹脂、矽樹脂和環氧樹脂中的至少一種。介質層MX可為光學透明樹脂。然而,本發明概念不限於此,且能夠於其中分散量子點PT1和PT2的任何元件都可以用作介質層MX。The dielectric layer MX can be composed of various resin compositions, which are generally referred to as binders. For example, the medium layer MX may be formed of a polymer resin, or contain a polymer resin. More specifically, the dielectric layer MX may be formed of at least one of acrylic resin, urethane resin, silicone resin, and epoxy resin, or include acrylic resin, urethane resin , At least one of silicone and epoxy. The medium layer MX may be an optically transparent resin. However, the inventive concept is not limited to this, and any element capable of dispersing the quantum dots PT1 and PT2 therein can be used as the medium layer MX.
量子點PT1和PT2可改變入射至其上的光的波長。各量子點PT1和PT2可具有奈米級結晶材料(nanometer-order crystalline material),所述奈米級結晶材料包含數百至數千個原子。因量子點PT1和PT2的大小,量子點PT1和PT2的能帶間隙會增加,能帶間隙之增加係由量子限制效應(quantum confinement effect)所引起。當光入射至量子點PT1和PT2的能量大於各量子點PT1和PT2的能帶間隙時,各量子點PT1和PT2可吸收光以具有激發態(excited state);且當其回到其之態(ground state)時,且各量子點PT1和PT2可以特定波長發射光。發射的光的波長可由能帶間隙決定。於此,可控制各量子點PT1和PT2的大小或組成,以調整量子限制效應,其會影響從量子點PT1和PT2射出的光的光學特性(例如,波長)。Quantum dots PT1 and PT2 can change the wavelength of light incident on them. Each of the quantum dots PT1 and PT2 may have a nanometer-order crystalline material containing hundreds to thousands of atoms. Due to the size of the quantum dots PT1 and PT2, the band gaps of the quantum dots PT1 and PT2 will increase. The increase in the band gap is caused by the quantum confinement effect. When the energy of light incident on the quantum dots PT1 and PT2 is greater than the band gap of each quantum dot PT1 and PT2, each quantum dot PT1 and PT2 can absorb the light to have an excited state; and when it returns to its state (ground state), and each quantum dot PT1 and PT2 can emit light at a specific wavelength. The wavelength of the emitted light can be determined by the band gap. Here, the size or composition of each quantum dot PT1 and PT2 can be controlled to adjust the quantum confinement effect, which affects the optical characteristics (for example, wavelength) of the light emitted from the quantum dots PT1 and PT2.
各量子點PT1和PT2可選自由II-VI族化合物、III-V族化合物、IV-VI族化合物、IV族元素、IV族化合物及其組合的群組。Each quantum dot PT1 and PT2 can be selected from the group of II-VI compounds, III-V compounds, IV-VI compounds, IV elements, IV compounds, and combinations thereof.
II-VI族化合物可選自二元化合物(例如CdS、CdSe、CdTe、ZnS、ZnSe、ZnTe、ZnO、HgS、HgSe、HgTe、MgSe和MgS)、二元化合物的混合物、三元化合物(例如CdSeS、CdSeTe、CdSTe、ZnSeS、ZnSeTe、ZnSTe、HgSeS、HgSeTe、HgSTe、CdZnS、CdZnSe、CdZnTe、CdHgS、CdHgSe、CdHgTe、HgZnS、HgZnSe、HgZnTe、MgZnSe和MgZnS)、三元化合物的混合物、四元化合物(例如HgZnTeS、CdZnSeS、CdZnSeTe、CdZnSTe、CdHgSeS、CdHgSeTe、CdHgSTe、HgZnSeS、HgZnSeTe和HgZnSTe)以及四元化合物的混合物所組成的群組。Group II-VI compounds can be selected from binary compounds (e.g. CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, and MgS), mixtures of binary compounds, ternary compounds (e.g. CdSeS) , CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, a mixture of ternary compounds (ZnS) For example, HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe) and mixtures of quaternary compounds.
III-V族化合物可選自二元化合物(例如GaN、GaP、GaAs、GaSb、AlN、AlP、AlAs、AlSb、InN、InP、InAs和InSb)、二元化合物的混合物、三元化合物(例如GaNP、GaNAs、GaNSb、GaPAs、GaPSb、AlNP、AlNAs、AlNSb、AlPAs、AlPSb、InNP、InNAs、InNSb、InPAs、InPSb和GaAlNP)、三元化合物的混合物、四元化合物(例如GaAlNAs、GaAlNSb、GaAlPAs、GaAlPSb、GaInNP、GaInNAs、GaInNSb、GaInPAs、GaInPSb、InAlNP、InAlNAs、InAlNSb、InAlPAs和InAlPSb)以及四元化合物的混合物所組成的群組。IV-VI族化合物可選自二元化合物(例如SnS、SnSe、SnTe、PbS、PbSe和PbTe)、二元化合物的混合物、三元化合物(例如SnSeS、SnSeTe、SnSTe、PbSeS、PbSeTe、PbSTe、SnPbS、SnPbSe和SnPbTe)、三元化合物的混合物、四元化合物(例如SnPbSSe、SnPbSeTe和SnPbSTe)以及四元化合物的混合物所組成的群組。IV族元素可選自由Si、Ge和其混合物所組成的群組。IV族化合物可包含選自由SiC、SiGe及其混合物所組成的群組的二元化合物。Group III-V compounds can be selected from binary compounds (e.g., GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, and InSb), mixtures of binary compounds, ternary compounds (e.g., GaNP , GaNAS, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb and GaAlNP), mixtures of ternary compounds, quaternary compounds (e.g. GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb) , GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb) and mixtures of quaternary compounds. Group IV-VI compounds can be selected from binary compounds (e.g. SnS, SnSe, SnTe, PbS, PbSe, and PbTe), mixtures of binary compounds, ternary compounds (e.g. SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS) , SnPbSe and SnPbTe), mixtures of ternary compounds, quaternary compounds (such as SnPbSSe, SnPbSeTe and SnPbSTe) and mixtures of quaternary compounds. Group IV elements can be selected from the group consisting of Si, Ge and mixtures thereof. The group IV compound may include a binary compound selected from the group consisting of SiC, SiGe, and mixtures thereof.
於此,二元、三元或四元化合物於整個(throughout)粒子中可具有均勻的濃度,或於各粒子中可具有空間地變化的濃度分佈。Here, the binary, ternary or quaternary compound may have a uniform concentration throughout the particles, or may have a spatially varying concentration distribution in each particle.
各量子點PT1和PT2可具有包含核與包圍核的外殼的核殼結構。在一些例示性實施例中,各量子點PT1和PT2可具有核/殼結構,其中一個量子點由另一個量子點密封。於核和殼之間的介面處,殼中包含的元素(element)可具有朝向中心方向逐漸減少的濃度。Each quantum dot PT1 and PT2 may have a core-shell structure including a core and a shell surrounding the core. In some exemplary embodiments, each of the quantum dots PT1 and PT2 may have a core/shell structure, in which one quantum dot is sealed by the other quantum dot. At the interface between the core and the shell, the element contained in the shell may have a concentration that gradually decreases toward the center.
各量子點PT1和PT2可為奈米級粒子。各量子點PT1和PT2可具有發光波長光譜,其之全寬半峰值(full width half maximum,FWHM)小於約45nm,且在一些例示性實施例中,小於約40奈米,且在另一些例示性實施例中,小於約30奈米。在此情況下,量子點PT1和PT2可改善色純度或色彩還原特性。此外,量子點PT1和PT2可以輻射狀地(radially)發射光,其可提高視角。Each quantum dot PT1 and PT2 may be nano-scale particles. Each quantum dot PT1 and PT2 may have an emission wavelength spectrum, the full width half maximum (FWHM) of which is less than about 45 nm, and in some exemplary embodiments, less than about 40 nanometers, and in other exemplary embodiments In a sexual embodiment, it is less than about 30 nanometers. In this case, the quantum dots PT1 and PT2 can improve color purity or color reproduction characteristics. In addition, the quantum dots PT1 and PT2 can emit light radially, which can increase the viewing angle.
在例示性實施例中,量子點PT1和PT2可實質上為球形、金字塔形、多臂形或立方形奈米粒子。在另一例示性實施例中,量子點PT1和PT2可為奈米管、奈米線、奈米纖維、奈米板形粒子,但本發明概念不限於此。In an exemplary embodiment, the quantum dots PT1 and PT2 may be substantially spherical, pyramid-shaped, multi-armed or cubic nanoparticle. In another exemplary embodiment, the quantum dots PT1 and PT2 may be nanotubes, nanowires, nanofibers, or nanoplate-shaped particles, but the concept of the invention is not limited thereto.
在本例示性實施例中,量子點PT1和PT2可包含第一量子點PT1和第二量子點PT2。入射至第一量子點PT1和第二量子點PT2並從其中發射的光的波長可彼此有所不同。然而,本發明概念不限於此,且在一些例示性實施例中,由量子點PT1和PT2轉換的光的波長可在單一波長範圍內。另外,在例示性實施例中,量子點PT1和PT2可進一步包含轉換其它光波長的其他量子點。然而,本發明概念不限於此,且量子點PT1和PT2的類型或數量可有不同的變化。In this exemplary embodiment, the quantum dots PT1 and PT2 may include a first quantum dot PT1 and a second quantum dot PT2. The wavelengths of light incident to and emitted from the first quantum dot PT1 and the second quantum dot PT2 may be different from each other. However, the inventive concept is not limited to this, and in some exemplary embodiments, the wavelength of the light converted by the quantum dots PT1 and PT2 may be within a single wavelength range. In addition, in an exemplary embodiment, the quantum dots PT1 and PT2 may further include other quantum dots that convert other light wavelengths. However, the concept of the present invention is not limited to this, and the type or number of quantum dots PT1 and PT2 may have different changes.
散射粒子SP可包含由諸如氧化鈦(titanium oxide)或矽類(silica-based)材料之高反射金屬氧化物中的至少一種形成的奈米粒子。散射粒子SP可散射從量子點PT1和PT2發射的光,以提高在量子點單元320的光學回收效率(optical recycling efficiency)。於此,從量子點單元320發射的光的光學效率可因而提高。然而,本發明概念不限於此,且在一些例示性實施例中,散射粒子SP可從量子點單元320省略。The scattering particles SP may include nano particles formed of at least one of highly reflective metal oxides such as titanium oxide or silicon-based materials. The scattering particles SP can scatter the light emitted from the quantum dots PT1 and PT2 to improve the optical recycling efficiency in the
在本例示性實施例中,量子點層321的頂表面321-S(下文簡稱「QDL頂表面(QDL top surface)」)可包含複數個褶皺或凹凸(concavo-convex)圖案WRK-Q(下文簡稱「QDL褶皺(QDL wrinkles)」)。相較於由第一方向DR1和第二方向DR2界定的平面,QDL褶皺WRK-Q可為實質上在第三方向DR3上突出的QDL頂表面321-S的一部分。當於垂直方向測量時,QDL褶皺WRK-Q可具有為約1μm或更少的厚度。於此,相較於LBL頂表面322-S,QDL頂表面321-S可為不均勻。In this exemplary embodiment, the top surface 321-S of the quantum dot layer 321 (hereinafter referred to as “QDL top surface (QDL top surface)”) may include a plurality of folds or concavo-convex patterns WRK-Q (hereinafter referred to as “QDL top surface”). Referred to as "QDL wrinkles"). Compared to the plane defined by the first direction DR1 and the second direction DR2, the QDL fold WRK-Q may be a part of the QDL top surface 321-S substantially protruding in the third direction DR3. When measured in the vertical direction, the QDL fold WRK-Q may have a thickness of about 1 μm or less. Here, compared to the LBL top surface 322-S, the QDL top surface 321-S may be uneven.
QDL褶皺WRK-Q可由殘餘應力(residual stress)形成,其在量子點層321的形成期間或之後,可發生或保留在量子點層321中。因QDL褶皺WRK-Q的存在,QDL頂表面321-S可具有褶皺形狀。QDL褶皺WRK-Q的不均勻形狀可轉移(transcribed)至上阻障層323的頂表面。此將於下文進行更詳細地描述。The QDL wrinkles WRK-Q may be formed by residual stress, which may occur or remain in the
上阻障層323可設置於量子點層321上,以直接覆蓋QDL頂表面321-S。上阻障層323於基底基板310上實質上可具有均勻厚度。例如,上阻障層323在重疊於QDL褶皺WRK-Q的QDL頂表面321-S的區域中可具有厚度T2,且在相鄰於QDL褶皺WRK-Q的QDL頂表面321-S的區域中可具有實質上等於T2的厚度T1。The
在本例示性實施例中,上阻障層323的頂表面323-S(例如,UBL頂表面)可界定光學構件的頂表面300-S(例如,參照第1圖)。UBL頂表面323-S可具有對應於設置於其下的QDL頂表面321-S的形狀。於此,UBL頂表面323-S可包含對應於QDL褶皺WRK-Q的複數個褶皺WRK。相較於由第一方向DR1和第二方向DR2界定的平面,褶皺WRK可為實質上在第三方向DR3上突出的UBL頂表面323-S的一部分。因褶皺WRK的存在,相較於基底基板310的頂表面SF-U,UBL頂表面323-S可具有不平坦部(section)。例如,因褶皺WRK的存在,UBL頂表面323-S可具有褶皺形狀。In this exemplary embodiment, the top surface 323-S (for example, the UBL top surface) of the
第5B圖係為顯示UBL頂表面323-S的區域之放大形狀的影像。參照第5B圖,褶皺WRK可隨機佈置於基底基板310的頂表面SF-U上。Figure 5B is an image showing the enlarged shape of the area 323-S on the top surface of UBL. Referring to FIG. 5B, the wrinkles WRK can be randomly arranged on the top surface SF-U of the
在平面圖中觀看時,至少一個褶皺WRK可具有實質上地曲線形狀(curvilinear shape)。曲線形狀可指至少具有曲線的或彎曲部分的形狀,且可包含開放或閉合曲線形狀。在第5B圖中,為方便說明,只有部分褶皺WRK(例如,第一褶皺WRK1、第二褶皺WRK2和第三褶皺WRK3)以元件符號表示。When viewed in a plan view, the at least one fold WRK may have a substantially curvilinear shape. The curved shape may refer to a shape having at least a curved or curved portion, and may include an open or closed curved shape. In Fig. 5B, for convenience of description, only part of the wrinkles WRK (for example, the first wrinkle WRK1, the second wrinkle WRK2, and the third wrinkle WRK3) are represented by element symbols.
在平面圖中觀看時,第一褶皺WRK1可具有曲線形狀。例如,第一褶皺WRK1可具有非閉合(例如,開放)曲線形狀。在平面圖中觀看時,第二褶皺WRK2可具有曲線形狀。例如,第二褶皺WRK2可具有開放曲線形狀。When viewed in a plan view, the first fold WRK1 may have a curved shape. For example, the first fold WRK1 may have a non-closed (eg, open) curve shape. When viewed in a plan view, the second fold WRK2 may have a curved shape. For example, the second fold WRK2 may have an open curve shape.
第一褶皺WRK1和第二褶皺WRK2可具有彼此獨立的形狀。具體地,由於第一褶皺WRK1的曲線形狀和第二褶皺WRK2的曲線形狀係被獨立控制,因此其可彼此相同或不同。在本例示性實施例中,第一褶皺WRK1和第二褶皺WRK2係說明為具有彼此不同的曲線形狀。The first fold WRK1 and the second fold WRK2 may have shapes independent of each other. Specifically, since the curved shape of the first pleat WRK1 and the curved shape of the second pleat WRK2 are independently controlled, they may be the same or different from each other. In this exemplary embodiment, the first wrinkle WRK1 and the second wrinkle WRK2 are described as having different curved shapes from each other.
第一褶皺WRK1和第二褶皺WRK2可彼此互相連接。在本例示性實施例中,第二褶皺WRK2的端部連接至第一褶皺WRK1的一部分。然而,本發明概念不限於此。例如,在一些例示性實施例中,第一褶皺WRK1和第二褶皺WRK2可在其它位置處彼此互相連接,或可彼此分離。The first fold WRK1 and the second fold WRK2 may be connected to each other. In this exemplary embodiment, the end of the second pleat WRK2 is connected to a part of the first pleat WRK1. However, the inventive concept is not limited to this. For example, in some exemplary embodiments, the first wrinkle WRK1 and the second wrinkle WRK2 may be connected to each other at other positions, or may be separated from each other.
第三褶皺WRK3可與第一褶皺WRK1和第二褶皺WRK2間隔開。第三褶皺WRK3可具有曲線形狀。第三褶皺WRK3的曲線形狀可為閉環形狀。The third fold WRK3 may be spaced apart from the first fold WRK1 and the second fold WRK2. The third fold WRK3 may have a curved shape. The curved shape of the third fold WRK3 may be a closed loop shape.
根據例示性實施例,在平面圖中觀看時,褶皺WRK可具有各種形狀。如上所述,一些褶皺WRK可彼此互相連接,或可分離、或可彼此間隔開。另外,一些褶皺WRK可為非封閉(例如,開放)曲線形狀、或封閉曲線形狀。在例示性實施例中,褶皺WRK之間的距離可等於或小於約100μm。According to exemplary embodiments, when viewed in a plan view, the wrinkles WRK may have various shapes. As mentioned above, some folds WRK may be connected to each other, or may be separated, or may be spaced apart from each other. In addition, some folds WRK may have a non-closed (for example, open) curve shape, or a closed curve shape. In an exemplary embodiment, the distance between the wrinkles WRK may be equal to or less than about 100 μm.
在例示性實施例中,上阻障層323可包含具有複數個褶皺WRK的不均勻的頂表面323-S。褶皺WRK可由QDL頂表面321-S的實質上不均勻輪廓(profile)形成。在例示性實施例中,即使當量子點層321係由外部影響或溫度變化變形(deformed),由於上阻障層323沿著QDL褶皺WRK-Q被形成,上阻障層323可降低由量子點層321變形而引起的各種技術應力。於此,上阻障層323可的損壞被抑制或防止損壞(例如,從量子點層321中分層、或被損壞),因此光學構件300的可靠性可有所提高。In an exemplary embodiment, the
第6A圖係繪示根據例示性實施例之光學構件的一部分的剖面圖。第6B圖係繪示根據例示性實施例之光學構件的一部分的剖面圖。第6A圖和第6B圖的剖面圖係表示量子點單元320-1和320-2的一些區域。於下文中,根據例示性實施例,將參照第6A圖和第6B圖描述光學構件,其可實質上包含上述參照第1圖至第5B圖描述的相同元件。於此,對實質上相同元件的重複描述將予以省略以避免冗餘。FIG. 6A is a cross-sectional view of a part of an optical component according to an exemplary embodiment. FIG. 6B is a cross-sectional view of a part of an optical component according to an exemplary embodiment. The cross-sectional views of FIGS. 6A and 6B show some areas of the quantum dot units 320-1 and 320-2. Hereinafter, according to an exemplary embodiment, an optical member will be described with reference to FIGS. 6A and 6B, which may substantially include the same elements described above with reference to FIGS. 1 to 5B. Here, repeated descriptions of substantially the same elements will be omitted to avoid redundancy.
如第6A圖所示,量子點單元320-1可包含具有複數個層的下阻障層322-1和具有複數層的上阻障層323-1。下阻障層322-1可包含第一下層L11和第二下層L21。各第一下層L11和第二下層L21可由無機材料形成,或包含無機材料。例如,各第一下層L11和第二下層L21可由金屬氧化物、氧化矽和氮化矽的至少一個或其任意組合形成,或包含金屬氧化物、氧化矽和氮化矽的至少一個或其任意組合。第一和第二下層L11和L21的材料可彼此相同或不同,而於此不受限制。As shown in FIG. 6A, the quantum dot unit 320-1 may include a lower barrier layer 322-1 having a plurality of layers and an upper barrier layer 323-1 having a plurality of layers. The lower barrier layer 322-1 may include a first lower layer L11 and a second lower layer L21. Each of the first lower layer L11 and the second lower layer L21 may be formed of an inorganic material, or contain an inorganic material. For example, each of the first lower layer L11 and the second lower layer L21 may be formed of at least one of metal oxide, silicon oxide, and silicon nitride, or any combination thereof, or at least one of metal oxide, silicon oxide, and silicon nitride, or any combination thereof. random combination. The materials of the first and second lower layers L11 and L21 may be the same or different from each other, and are not limited herein.
上阻障層323-1可包含第一上層L12和第二上層L22。各第一上層L12和第二上層L22可由無機材料形成,或包含無機材料。第一和第二上層L12和L22的材料可彼此相同或不同,而於此不受限制。The upper barrier layer 323-1 may include a first upper layer L12 and a second upper layer L22. Each of the first upper layer L12 and the second upper layer L22 may be formed of an inorganic material or contain an inorganic material. The materials of the first and second upper layers L12 and L22 may be the same or different from each other, and are not limited herein.
如第6B圖所示,相較於第5A圖的量子點單元320,量子點單元320-2可進一步包含覆蓋層324。覆蓋層324可設置於上阻障層323上,以覆蓋UBL頂表面323-S。於此情況下,第1圖的光學構件的頂表面300-S可對應於覆蓋層324的頂表面324-S。As shown in FIG. 6B, compared with the
覆蓋層324可覆蓋褶皺WRK,且於量子點單元320-2上提供實質上平坦頂表面(substantially flat top surface)。於此,在覆蓋層324中,重疊於褶皺WRK的部分的厚度T3可不同於相鄰於褶皺WRK的部分的厚度T4。The
覆蓋層324可由有機材料形成,或包含有機材料。覆蓋層324可為光學透明的。因覆蓋層324的透明度(transparency),從量子點單元320-2發射的光的效率不會被劣化。The
第7A圖至7C圖係根據例示性實施例分別繪示光學構件的剖面圖。第7B圖和第7C圖所示之光學構件例示性地表示由外部撞擊或熱量(heat)而變形的第7A圖的光學構件300。於下文中,根據例示性實施例,將參照第7A圖至第7C圖描述光學構件。FIGS. 7A to 7C are respectively cross-sectional views of optical components according to exemplary embodiments. The optical member shown in FIGS. 7B and 7C exemplarily shows the
如第7A圖所示,光學構件300可包含基底基板310和量子點單元320。UBL頂表面323-S可包含褶皺WRK。上阻障層323可具有實質上均勻的厚度。例如,上阻障層323可具有褶皺WRK上的厚度T1、和在相鄰於褶皺WRK的區域上的厚度T2,且厚度T2實質上等於厚度T1。量子點層321可包含褶皺頂表面321-S。因褶皺WRK的存在,量子點層321可具有非均勻厚度。量子點層321在褶皺WRK下方可具有最大厚度TQ。As shown in FIG. 7A, the
參照第7B圖,當拉伸應力TS-I施加(exerted)於光學構件300-TS上時,量子點層321可因而變形。QDL頂表面321-S的褶皺WRK-T的程度(extent)會有所減少,且量子點層321可具有小於第7A圖的最大厚度TQ的最大厚度TQ1。拉伸應力TS-I可由外部衝擊或殘餘應力引起,其可保留於量子點層321中。Referring to FIG. 7B, when the tensile stress TS-I is exerted on the optical member 300-TS, the
參照第7C圖,當對光學構件300-CS施加壓縮應力CS-I時,量子點層321會因而變形。QDL頂表面321-S的褶皺WRK-C的程度會增加,且量子點層321可具有大於第7A圖的最大厚度TQ的最大厚度TQ2。壓縮應力CS-I可由外部衝擊或殘餘應力引起,其可保留於量子點層321中。Referring to FIG. 7C, when compressive stress CS-I is applied to the optical member 300-CS, the
在例示性實施例中,上阻障層323可被形成為具有沿著不均勻的QDL頂表面321-S之實質上均勻的厚度,因此,即使當QDL頂表面321-S的褶皺的程度發生變化,上阻障層323可與量子點層321維持穩定的接觸。UBL頂表面323-S的褶皺WRK-T和WRK-C的程度會由QDL頂表面321-S的變形而減少或增加,然而,在第7A圖的光學構件300中,因上阻障層323的厚度係均勻地維持,上阻障層323的中性平面(neutral plane)的位置無法變更。In an exemplary embodiment, the
於此,在QDL頂表面321-S變形下,上阻障層323可均勻地維持,因此,光學構件300-TS的可靠性可因而提高。Herein, under the deformation of the QDL top surface 321-S, the
第8A圖至第8E圖係繪示根據例示性實施例說明製造光學構件之方法的剖面圖。第9A圖至第9D圖係繪示根據例示性實施例說明製造光學構件之方法的剖面圖。對應於第8C圖至8E圖的步驟係於第9A圖至第9C圖中表示。於下文中,將參照第8A圖至第9C圖來描述根據例示性實施例之製造光學構件的方法,且相同於參照第1圖至第7C圖描述之光學構件中實質上相同元件的重複描述將予以省略以避免冗餘。8A to 8E are cross-sectional views illustrating a method of manufacturing an optical component according to an exemplary embodiment. 9A to 9D are cross-sectional views illustrating a method of manufacturing an optical component according to exemplary embodiments. The steps corresponding to FIGS. 8C to 8E are shown in FIGS. 9A to 9C. Hereinafter, a method of manufacturing an optical member according to an exemplary embodiment will be described with reference to FIGS. 8A to 9C, and is the same as the repeated description of substantially the same elements in the optical member described with reference to FIGS. 1 to 7C Will be omitted to avoid redundancy.
如第8A圖所示,可提供基底基板310。基底基板310可為玻璃基板。基底基板310可具有面向上(upward)方向或第三方向DR3(例如,參照第1圖)的頂表面310-S。As shown in FIG. 8A, a
其後,如第8B圖所示,下阻障層322和初始(preliminary)量子點層321-I可依序於基底基板310上形成。例如,下阻障層322可在基底基板310的頂表面310-S上藉由塗覆無機材料而形成。塗覆製程可包含沉積或印刷製程。Thereafter, as shown in FIG. 8B, the
初始量子點層321-I可在下阻障層322形成之後形成。初始量子點層321-I可包含介質層MX、第一量子點PT1和第二量子點PT2。初始量子點層321-I可藉由於下阻障層322上塗覆介質層MX而形成,第一量子點PT1和第二量子點PT2散佈於介質層MX中。The initial quantum dot layer 321-1 may be formed after the
其後,如第8C圖和第8D圖所示,初始量子點層321-I可被固化以形成量子點層321。如第8C圖所示,初始量子點層321-I的固化製程可包含熱量HT提供於其中之熱固化製程。依據初始量子點層321-I的組成和含量、以及量子點層321的所需的厚度,熱固化製程中的製程溫度或時間可進行各種調整。Thereafter, as shown in FIGS. 8C and 8D, the initial quantum dot layer 321-1 may be cured to form the
如第8D圖所示,量子點層321可被形成為具有在頂表面321-S(下文簡稱「QDL頂表面(QDL top surface)」)上的褶皺WRK-Q(下文簡稱「QDL褶皺(QDL wrinkles)」)。固化製程後,相較於LBL頂表面322-S,QDL頂表面321-S可能具有褶皺形狀。As shown in FIG. 8D, the
QDL褶皺WRK-Q可由施加於初始量子點層321-I的頂表面321-S的應力SS形成。隨著施加的應力SS更強,QDL褶皺WRK-Q的褶皺的程度會被形成為更大。隨著QDL褶皺WRK-Q的褶皺的程度變大,QDL褶皺WRK-Q的突出程度也會變大。The QDL fold WRK-Q may be formed by the stress SS applied to the top surface 321-S of the initial quantum dot layer 321-1. As the applied stress SS becomes stronger, the degree of wrinkles of QDL wrinkles WRK-Q will be formed larger. As the degree of wrinkle of QDL fold WRK-Q becomes larger, the degree of protrusion of QDL fold WRK-Q also becomes larger.
褶皺的程度可以各種方式調整。例如,褶皺的程度可依據初始量子點層321-I的材料特性而改變。具體地,褶皺的程度可取決於初始量子點層321-I的玻璃轉移溫度(glass transition temperature)。隨著在固化製程期間中之初始量子點層321-I對熱量HT的穩定性下降,褶皺的程度可因而變大。The degree of wrinkles can be adjusted in various ways. For example, the degree of wrinkles can be changed according to the material characteristics of the initial quantum dot layer 321-1. Specifically, the degree of wrinkles may depend on the glass transition temperature of the initial quantum dot layer 321-1. As the stability of the initial quantum dot layer 321-I to heat HT decreases during the curing process, the degree of wrinkles may increase accordingly.
在例示性實施例中,褶皺的程度可依據量子點層321的厚度而改變。例如,可提供更多含量的初始量子點層321-I以形成更厚的初始量子點層321-I,在此情況下,隨著量子點層321的厚度變大,褶皺的程度可因而變大。In an exemplary embodiment, the degree of wrinkles may be changed according to the thickness of the
在例示性實施例中,依據基底基板310和初始量子點層321-I之間的玻璃轉移溫度差異,褶皺的程度會有所不同。基底基板310和初始量子點層321-I對固化製程期間中提供的熱量HT的穩定性可彼此不同。於此,殘餘應力可發生於初始量子點層321-I中,且當殘餘應力為壓縮應力時,褶皺的程度可因而增大。In an exemplary embodiment, the degree of wrinkles may vary according to the difference in glass transition temperature between the
其後,如第8E圖所示,上阻障層323可於量子點層321上形成光學構件300。例如,藉由塗覆無機層塗覆於QDL頂表面321-S上可形成上阻障層323。塗覆製程可包含沉積或印刷製程。Thereafter, as shown in FIG. 8E, the
上阻障層323可被形成,以具有沿著QDL頂表面321-S起皺(wrinkled)之頂表面323-S(下文簡稱「UBL頂表面(UBL top surface)」)。UBL頂表面323-S可具有從QDL頂表面321-S轉移的垂直剖面(vertical profile)。如此,UBL頂表面323-S可包含對應於QDL褶皺WRK-Q的複數個褶皺WRK。The
在光學構件300中,根據例示性實施例,由於包含無機材料的上阻障層323係以褶皺頂表面321-S形成於量子點層321上,上阻障層323可被形成,以具有褶皺頂表面323-S。在固化製程期間中,量子點層321的變形可為由熱應力(thermal stress)造成,諸如熱量HT。如此,藉由形成具有不均勻頂表面321-S的量子點層321,根據例示性實施例,可緩解熱量HT引起的熱應力。In the
根據例示性實施例,上阻障層323可直接形成於經變形的量子點層321上,因此,量子點層321會在其後之(subsequent)步驟中的變形被抑制或防止變形。另外,由於上阻障層323係沿量子點層321的褶皺WRK-Q形成,即使當褶皺WRK-Q由量子點層321的隨後之變形而被變形,其為可能的是,可防止或抑制上阻障層323中的損害或分層問題發生。According to an exemplary embodiment, the
參照第9A圖至第9D圖,根據例示性實施例,QDL褶皺WRK-Q和UBL頂表面的褶皺WRK可實質上同時形成。如第9A圖和第9B圖所示,第一初始量子點層321-I1可被固化,以形成第二初始量子點層321-I2。第一初始量子點層321-I1可對應於第8C圖所示之初始量子點層321-I。Referring to FIGS. 9A to 9D, according to an exemplary embodiment, the QDL wrinkle WRK-Q and the wrinkle WRK on the top surface of the UBL may be formed substantially simultaneously. As shown in FIGS. 9A and 9B, the first initial quantum dot layer 321-11 may be cured to form the second initial quantum dot layer 321-12. The first initial quantum dot layer 321-11 may correspond to the initial quantum dot layer 321-1 shown in FIG. 8C.
不同於藉由固化第一初始量子點層321-I形成的第8D圖的量子點層321,第二初始量子點層321-I2可具有平坦頂表面321-S20。第一初始量子點層321-I1的頂表面321-S10可與第二初始量子點層321-I2的頂表面321-S20實質上相同。在此情況下,雖然第二初始量子點層321-I2可被暴露於熱量HT引起的熱應力,然而,其之頂表面321-S20不會從第一初始量子點層321-I1的頂表面321-S10變形。Unlike the
其後,如第9C圖所示,初始上阻障層323-I可形成於第二初始量子點層321-I2上。初始上阻障層323-I可具有頂表面323-S10,所述頂表面323-S10具有從第二初始量子點層321-I2的頂表面321-S20轉移的輪廓。如此,初始上阻障層323-I的頂表面323-S10可為實質上平坦表面。Thereafter, as shown in FIG. 9C, the initial upper barrier layer 323-I may be formed on the second initial quantum dot layer 321-12. The initial upper barrier layer 323-I may have a top surface 323-S10 having a profile transferred from the top surface 321-S20 of the second initial quantum dot layer 321-12. As such, the top surface 323-S10 of the initial upper barrier layer 323-I may be a substantially flat surface.
如第9D圖所示,第二初始量子點層321-I2和初始上阻障層323-I可被變形,以形成量子點層321和上阻障層323。第9C圖和第9D圖係表示上阻障層323在其形成後被變形,然而本發明概念不限於此。例如,在一些例示性實施例中,上阻障層323可在其之形成過程中變形。As shown in FIG. 9D, the second initial quantum dot layer 321-12 and the initial upper barrier layer 323-I may be deformed to form the
因第二初始量子點層321-I2由殘餘應力SS所致的變形,諸如從熱量HT產生的熱應力,量子點層321可被形成。因殘餘應力SS,褶皺WRK-Q和WRK可分別於QDL頂表面321-S和上阻障層323-S的頂表面323-S上形成。在例示性實施例中,殘餘應力SS可為對褶皺WRK-Q和WRK的壓縮應力。Due to the deformation of the second initial quantum dot layer 321-I2 caused by the residual stress SS, such as thermal stress generated from the heat HT, the
根據例示性實施例,由於上阻障層323可直接形成於經變形的量子點層321上,因此在其後之步驟中,其為可能的是,可防止或抑制量子點層321進一步被變形。另外,在例示性實施例中,由於上阻障層323係沿量子點層321的褶皺WRK形成,即使當褶皺WRK因量子點層321的其後之變形而變形,其為可能的是,可防止或抑制於上阻障層323中發生的損壞或分層問題。According to an exemplary embodiment, since the
第10圖係為根據例示性實施例之顯示設備的分解透視圖。第11A圖至第11D圖係繪示根據例示性實施例說明製造光學構件之方法的剖面圖。於下文中,根據例示性實施例,將參照第10圖至第11D圖以描述顯示設備。Fig. 10 is an exploded perspective view of a display device according to an exemplary embodiment. 11A to 11D are cross-sectional views illustrating a method of manufacturing an optical member according to an exemplary embodiment. Hereinafter, according to exemplary embodiments, the display device will be described with reference to FIGS. 10 to 11D.
如第10圖所示,顯示設備DA-C可具有曲線形狀。顯示設備DA-C可包含顯示面板100C、背光單元BLU、上保護構件410C、下保護構件420C和光學薄膜500。As shown in Fig. 10, the display device DA-C may have a curved shape. The display device DA-C may include a
顯示面板100C可具有曲線形狀。顯示面板100C可包含第一基板110C和第二基板120C。各第一基板110C和第二基板120C也可具有曲線形狀,且除了其之曲線形狀,第一基板110C和第二基板120C可具有與第1圖的第一基板110和第二基板120實質上相同的特徵。於此,對實質上相同的元件和特徵的重複描述將予以省略。The
各上保護構件410C和下保護構件420C可具有曲線形狀。當光學薄膜500被組裝於顯示設備DA-C中時,可處於彎曲狀態。除了上保護構件410C、下保護構件420C和光學薄膜500的曲線形狀,其可具有與第1圖中的上保護構件410、下保護構件420和光學薄膜500實質上相同的特徵。於此,對實質上相同的元件和特徵的重複描述將予以省略。Each of the
背光單元BLU可包含光源200C和光學構件300C。光源200C可包含電路基板210C和複數個發光元件220C。在例示性實施例中,光源200C可具有與第1圖的光源200實質上相同的特徵,且因此,對其的重複描述將予以省略以避免冗餘。The backlight unit BLU may include a
光學構件300C可具有在特定方向的曲線形狀。光學構件300C可被設置,以使其頂表面300C-S面向顯示面板100C。除了其之曲線形狀,光學構件300C可對應於第1圖的光學構件300。於下文中,將參照第11A圖至第11D圖更詳細描述光學構件300C。The
如第11A圖和第11B圖所示,具有曲線形狀的基底基板312C可藉由沿彎曲軸BX彎曲初始基底基板312C-I形成。如此,基底基板312C中可發生應力SS1。應力SS1可為壓縮應力。基底基板312C可藉由應力SS1沿彎曲軸BX彎曲。As shown in FIGS. 11A and 11B, the base substrate 312C having a curved shape can be formed by bending the initial base substrate 312C-I along the bending axis BX. In this way, stress SS1 may occur in the base substrate 312C. The stress SS1 may be a compressive stress. The base substrate 312C can be bent along the bending axis BX by the stress SS1.
基底基板312C可沿彎曲軸BX以曲率半徑RC彎曲。雖然第11B圖表示基底基板312C以單一曲率半徑(例如,曲率半徑RC)均勻地彎曲,然而本發明概念不限於此。例如,在一些例示性實施例中,基底基板312C可以至少兩個不同的曲率半徑彎曲。The base substrate 312C may be bent with a radius of curvature RC along the bending axis BX. Although FIG. 11B shows that the base substrate 312C is uniformly curved with a single radius of curvature (for example, the radius of curvature RC), the concept of the present invention is not limited to this. For example, in some exemplary embodiments, the base substrate 312C may be curved with at least two different radii of curvature.
其後,如第11C圖所示,下阻障層322C、量子點層321C和上阻障層323C可依序形成於基底基板310C上,以形成光學構件300C。褶皺WRK可於上阻障層323C的頂表面上形成。如上所述,當量子點層321C被固化時,褶皺WRK可被形成,或者當上阻障層323C被形成時,藉由起皺形成而被形成(may be formed by wrinkles formed),因此,其之重複描述將予以省略。Thereafter, as shown in FIG. 11C, the
如第11D圖所示,在光學構件300C形成後,基底基板310C中會發生應力SS2。應力SS2可為基底基板310C的殘餘應力,且可為拉伸應力。殘餘應力可由施加於基底基板310C的彎曲應力引起。As shown in FIG. 11D, after the
在例示性實施例中,因具有褶皺WRK的UBL頂表面323C-S,即使當量子點層321C等藉由應力SS2被變形,上阻障層323C與量子點層321C之間的黏合強度可維持穩定。因此,其為可能的是,可防止或抑制上阻障層323C從量子點層321C分層或破裂,進而改善光學構件300C的可靠性。In an exemplary embodiment, due to the
根據本發明概念的例示性實施例,覆蓋量子點層的無機阻障層可被形成,以具有褶皺。因此,即使當量子點層藉由熱應力或外部衝擊而被變形,無機阻障層可抑制損壞或防止損壞,因此,光學構件的可靠性可獲得改善。According to an exemplary embodiment of the inventive concept, the inorganic barrier layer covering the quantum dot layer may be formed to have wrinkles. Therefore, even when the quantum dot layer is deformed by thermal stress or external impact, the inorganic barrier layer can suppress damage or prevent damage, and therefore, the reliability of the optical member can be improved.
儘管本發明已闡述各例示性實施例及實施方式,但從本文之描述,其它實施例及變更將顯而易見。因此,本發明概念不侷限於這些實施例,而應侷限於所附申請專利範圍的廣泛範疇、以及對於本領域通常知識者為顯而易見的各種明顯的變更及等效佈置。Although the present invention has described various exemplary embodiments and implementations, other embodiments and modifications will be apparent from the description herein. Therefore, the concept of the present invention is not limited to these embodiments, but should be limited to the broad scope of the scope of the attached patent application, as well as various obvious changes and equivalent arrangements that are obvious to those skilled in the art.
10:第一絕緣層 100,100C:顯示面板 110,110C:第一基板 120,120C:第二基板 20:第二絕緣層 200,200C:光源 210,210C:電路基板 220,220C:發光元件 30:第三絕緣層 300,300C,300-CS,300-TS:光學構件 300-S,300C-S,321-S,321-S10,321-S20,322-S,323C-S,323-S,323-S10,324-S,SF-U:頂表面 310,310C,312C:基底基板 312C-I:初始基底基板 320,320-1,320-2:量子點單元 321,321C:量子點層 321-I:初始量子點層 321-I1:第一初始量子點層 321-I2:第二初始量子點層 321-S20:平坦頂表面 322,322-1,322C:下阻障層 323,323-1,323C:上阻障層 323-I:初始上阻障層 324:覆蓋層 330:低折射層 410,410C:上保護構件 410-OP:開口 420,420C:下保護構件 420-B:底部部分 420-SS:內部空間 420-W:側壁部分 500:光學薄膜 AA:主動區域 AL:半導體圖案 BLU,BLU-1:背光單元 BM:黑矩陣 BX:彎曲軸 CC:外塗層 CE:控制電極 CF:濾色層 CLC:液晶電容器 CME:共用電極 CP:顏色圖案 CS-I:壓縮應力 DA,DA-C:顯示設備 DR1:第一方向 DR2:第二方向 DR3:第三方向 HT:熱量 IE:輸入電極 IS:顯示表面 L11:第一下層 L12:第一上層 L21:第二下層 L22:第二上層 LCL:液晶層 MX:介質層 NAA:周邊區域 OE:輸出電極 PE:畫素電極 PT1:第一量子點 PT2:第二量子點 PX:畫素 RC:曲率半徑 S1:第一基底層 S2:第二基底層 SF1:第一側表面 SF2:第二側表面 SF3:第三側表面 SF4:第四側表面 SF-L:底表面 SP:散射粒子 SS,SS1,SS2:應力 T1,T2,T3,T4:厚度 TQ,TQ1,TQ2:最大厚度 TR:薄膜電晶體 TS-I:拉伸應力 WRK,WRK-C,WRK-Q,WRK-T:褶皺 WRK1:第一褶皺 WRK2:第二褶皺 WRK3:第三褶皺10: The first insulating layer 100, 100C: display panel 110, 110C: first substrate 120, 120C: second substrate 20: second insulating layer 200, 200C: light source 210, 210C: Circuit board 220, 220C: light-emitting element 30: third insulating layer 300, 300C, 300-CS, 300-TS: optical components 300-S, 300C-S, 321-S, 321-S10, 321-S20, 322-S, 323C-S, 323-S, 323-S10, 324-S, SF-U: top surface 310, 310C, 312C: base substrate 312C-I: Initial base substrate 320, 320-1, 320-2: Quantum dot unit 321, 321C: Quantum dot layer 321-I: Initial quantum dot layer 321-I1: The first initial quantum dot layer 321-I2: Second initial quantum dot layer 321-S20: Flat top surface 322,322-1,322C: Lower barrier layer 323, 323-1, 323C: upper barrier layer 323-I: Initial upper barrier layer 324: Overlay 330: low refractive layer 410, 410C: Upper protective member 410-OP: Opening 420, 420C: Lower protection member 420-B: bottom part 420-SS: Internal space 420-W: side wall part 500: optical film AA: active area AL: Semiconductor pattern BLU, BLU-1: Backlight unit BM: black matrix BX: Bending shaft CC: outer coating CE: Control electrode CF: color filter CLC: liquid crystal capacitor CME: Common electrode CP: color pattern CS-I: Compressive stress DA, DA-C: display device DR1: First direction DR2: Second direction DR3: Third party HT: heat IE: Input electrode IS: Display surface L11: The first lower layer L12: First upper layer L21: The second lower layer L22: The second upper layer LCL: liquid crystal layer MX: Medium layer NAA: surrounding area OE: output electrode PE: pixel electrode PT1: The first quantum dot PT2: second quantum dot PX: pixel RC: radius of curvature S1: The first base layer S2: second basal layer SF1: First side surface SF2: second side surface SF3: Third side surface SF4: Fourth side surface SF-L: bottom surface SP: Scattering particles SS, SS1, SS2: Stress T1, T2, T3, T4: thickness TQ, TQ1, TQ2: maximum thickness TR: thin film transistor TS-I: Tensile stress WRK, WRK-C, WRK-Q, WRK-T: folds WRK1: The first fold WRK2: second fold WRK3: third fold
所包含的附圖提供了本發明概念的進一步理解,且一併引入且構成說明書的一部分並繪示例示性實施例,且配合描述一同用於解釋本發明概念。 第1圖係為根據例示性實施例之顯示設備的分解透視圖。 第2圖係為第1圖之顯示設備的示意性剖面圖。 第3A圖係為根據例示性實施例之背光單元的示意性剖面圖。 第3B圖係為根據例示性實施例之背光單元的示意性剖面圖。 第4圖係為根據例示性實施例之光學構件的分解透視圖。 第5A圖係為根據例示性實施例之光學構件的一部分的剖面圖。 第5B圖係為根據例示性實施例顯示光學構件的一部分的影像。 第6A圖係為根據例示性實施例之光學構件的一部分的剖面圖。 第6B圖係為根據例示性實施例之光學構件的一部分的剖面圖。 第7A圖、第7B圖和第7C圖係為根據例示性實施例之光學構件的剖面圖。 第8A圖、第8B圖、第8C圖、第8D圖和第8E圖係為根據例示性實施例說明製造光學構件之方法的剖面圖。 第9A圖、第9B圖、第9C圖和第9D圖係為根據例示性實施例說明製造光學構件之方法的剖面圖。 第10圖係為根據例示性實施例之顯示設備的分解透視圖。 第11A圖、第11B圖、第11C圖和第11D圖係為根據例示性實施例說明製造光學構件之方法的剖面圖。The included drawings provide a further understanding of the concept of the present invention, and are introduced together and constitute a part of the specification and illustrate exemplary embodiments, and are used to explain the concept of the present invention together with the description. Figure 1 is an exploded perspective view of a display device according to an exemplary embodiment. Figure 2 is a schematic cross-sectional view of the display device of Figure 1. FIG. 3A is a schematic cross-sectional view of a backlight unit according to an exemplary embodiment. FIG. 3B is a schematic cross-sectional view of a backlight unit according to an exemplary embodiment. Fig. 4 is an exploded perspective view of an optical member according to an exemplary embodiment. FIG. 5A is a cross-sectional view of a part of an optical member according to an exemplary embodiment. FIG. 5B is an image showing a part of the optical member according to an exemplary embodiment. FIG. 6A is a cross-sectional view of a part of an optical member according to an exemplary embodiment. FIG. 6B is a cross-sectional view of a part of an optical member according to an exemplary embodiment. FIG. 7A, FIG. 7B, and FIG. 7C are cross-sectional views of an optical member according to an exemplary embodiment. Fig. 8A, Fig. 8B, Fig. 8C, Fig. 8D, and Fig. 8E are cross-sectional views illustrating a method of manufacturing an optical member according to an exemplary embodiment. FIG. 9A, FIG. 9B, FIG. 9C, and FIG. 9D are cross-sectional views illustrating a method of manufacturing an optical member according to an exemplary embodiment. Fig. 10 is an exploded perspective view of a display device according to an exemplary embodiment. FIG. 11A, FIG. 11B, FIG. 11C, and FIG. 11D are cross-sectional views illustrating a method of manufacturing an optical member according to an exemplary embodiment.
100:顯示面板 100: display panel
110:第一基板 110: first substrate
120:第二基板 120: second substrate
200:光源 200: light source
210:電路基板 210: Circuit board
220:發光元件 220: light-emitting element
300:光學構件 300: Optical components
300-S:頂表面 300-S: Top surface
410:上保護構件 410: Upper protection member
410-OP:開口 410-OP: Opening
420:下保護構件 420: Lower protection member
420-B:底部部分 420-B: bottom part
420-SS:內部空間 420-SS: Internal space
420-W:側壁部分 420-W: side wall part
500:光學薄膜 500: optical film
AA:主動區域 AA: active area
BLU:背光單元 BLU: Backlight unit
DA:顯示設備 DA: display device
DR1:第一方向 DR1: First direction
DR2:第二方向 DR2: Second direction
DR3:第三方向 DR3: Third party
IS:顯示表面 IS: Display surface
NAA:周邊區域 NAA: surrounding area
PX:畫素 PX: pixel
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| KR10-2018-0107618 | 2018-09-10 | ||
| KR20180107618 | 2018-09-10 | ||
| KR10-2019-0027343 | 2019-03-11 | ||
| KR1020190027343A KR102674200B1 (en) | 2018-09-10 | 2019-03-11 | Optical member and display apparatus including the same |
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| Publication Number | Publication Date |
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| TW202028828A true TW202028828A (en) | 2020-08-01 |
| TWI835855B TWI835855B (en) | 2024-03-21 |
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| KR101673627B1 (en) * | 2011-08-31 | 2016-11-07 | 엘지이노텍 주식회사 | Optical member and display device |
| JP2016000803A (en) * | 2014-05-19 | 2016-01-07 | 富士フイルム株式会社 | Quantum dot-containing polymerizable composition, wavelength conversion member, backlight unit, liquid crystal display device, and method for producing wavelength conversion member |
| JP6575100B2 (en) * | 2015-03-25 | 2019-09-18 | 大日本印刷株式会社 | Light guide member, surface light source device, and display device |
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| JP7360857B2 (en) | 2023-10-13 |
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