TW202019569A - Substrate processing method and substrate processing apparatus - Google Patents

Abstract

A substrate treatment method, including: a treatment solution feeding step for feeding a treatment solution onto the surface of a substrate; an object-for-removal expansion step for solidifying or curing the treatment solution fed onto the surface of the substrate in a state of being in contact with an object for removal present on the surface of the substrate, and thereby expanding the apparent size of the object for removal; and a removal step for feeding a stripping solution to the surface of the substrate, stripping the object for removal, the apparent size of which has been expanded, from the surface of the substrate, and removing the object for removal from the surface of the substrate while maintaining the state in which the apparent size of the object for removal has been expanded.

Description

Substrate processing method and substrate processing device

The invention relates to a substrate processing method and a substrate processing device for processing a substrate. The substrates to be processed include, for example, semiconductor wafers, substrates for liquid crystal display devices, organic EL (Electroluminescence) display devices, and other FPD (Flat Panel Display) substrates, optical disc substrates, magnetic disc substrates, Substrates for magneto-optical disc substrates, photomask substrates, ceramic substrates, solar cell substrates, etc.

In the manufacturing process of semiconductor devices, in order to remove various contaminants adhering to the substrate, residues of the processing solution or resist used in the previous process, or various particles (hereinafter, there are collectively referred to as "removal objects") Situation), and implement the cleaning process.

In the cleaning process, a general method is to supply deionized water (DIW: Deionized Water) and other cleaning liquid to the substrate, and remove the object to be removed by the physical action of the cleaning liquid. Patent Document 1 described below describes a method of removing an object to be removed from a substrate by supplying DIW to the surface of the substrate. [Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2004-260099 [Patent Document 2] US Patent Application Publication No. 2014/041685

[Problems to be solved by the invention]

When the object to be removed is removed from the substrate by the cleaning solution, the greater the flow rate of the cleaning solution along the surface of the substrate, the greater the energy received by the removal object from the cleaning solution, so it is easier to remove the object The object is stripped from the surface of the substrate.

The flow rate of the cleaning liquid flowing through the surface of the substrate is affected by the viscosity of the cleaning liquid. In detail, the cleaning liquid flowing on the surface of the substrate is pulled to the substrate due to the viscosity of the cleaning liquid. Therefore, the flow velocity of the cleaning liquid in the direction along the substrate surface becomes smaller near the substrate surface than the position sufficiently separated from the substrate surface.

Since the object to be removed is very small, when the object to be removed is removed from the surface of the substrate by the method described in Patent Document 1, the object to be removed receives the cleaning liquid near the surface of the substrate. Therefore, the object to be removed may not receive sufficient energy from the cleaning solution.

Therefore, Patent Document 2 discloses a method of supplying a treatment liquid containing a solute and a volatile solvent to the upper surface of a substrate, and after forming a treatment film formed by curing or hardening the treatment liquid, the treatment film Dissolve and remove.

In this method, when the processing liquid is cured or hardened to form a processing film, the object to be removed is pulled away from the substrate. Then, the removed object to be pulled away is held in the processing film. Next, the dissolution treatment liquid is supplied to the substrate surface. By this, the processing film is dissolved on the substrate. Then, the object to be removed is removed from the upper surface of the substrate by the flow of the dissolution treatment liquid along the surface of the substrate.

However, in the method of Patent Document 2, since the treatment film is dissolved by dissolving the treatment liquid, the object to be removed is suspended in the dissolution treatment liquid and is attached to the substrate again. Such a re-attached removal object cannot receive sufficient energy from the dissolution treatment liquid flowing on the substrate surface. Therefore, there is a possibility that the object to be removed cannot be efficiently removed from the substrate surface.

Therefore, an object of the present invention is to provide a substrate processing method and a substrate processing apparatus that can efficiently remove objects to be removed present on the substrate surface. [Technical means to solve the problem]

An embodiment of the present invention provides a substrate processing method, including: a processing liquid supply process that supplies the processing liquid to the surface of the substrate; and a removal object amplification process that uses the processing liquid supplied to the substrate surface Curing or hardening in contact with the object to be removed present on the surface of the substrate, and enlarging the apparent size of the object to be removed; and the removal step of supplying a peeling liquid to the surface of the substrate to enlarge the apparent size The object to be removed is peeled from the surface of the substrate, and the object to be removed is removed from the surface of the substrate while maintaining the state in which the apparent size of the object to be removed is enlarged.

According to this method, the apparent size of the object to be removed is enlarged by curing or hardening the treatment liquid in contact with the object to be removed. The apparent size of the removal target refers to the overall size of the removal target and other solids when the removal target and other solids are integrated. The removal object whose apparent size is enlarged reaches a position farther from the surface of the substrate than the removal object of the original size. Therefore, the energy received by the removal object from the stripping liquid flowing on the surface of the substrate can be increased. Therefore, the object to be removed becomes easily peeled from the substrate.

In addition, the object to be removed is peeled from the substrate in a state where the apparent size is enlarged, and is removed from the surface of the substrate together with the peeling liquid. Therefore, after the object to be removed is peeled off from the surface of the substrate, the state where the energy received by the object to be removed from the peeling liquid flowing on the surface of the substrate is increased can also be maintained. Therefore, the object to be removed can be quickly removed to the outside of the substrate together with the peeling liquid.

As a result, the object to be removed present on the substrate surface can be efficiently removed.

In one embodiment of the present invention, the step of amplifying the object to be removed includes the step of making the apparent size of the object to be removed larger than the thickness of the boundary layer in the flow of the peeling liquid in the thickness direction of the substrate The process of enlarging the apparent size of the removal object.

At a position closer to the surface of the substrate than the thickness of the boundary layer in the thickness direction of the substrate, the flow rate of the peeling liquid decreases due to the viscosity of the peeling liquid. At a position farther from the substrate surface than the thickness of the boundary layer in the thickness direction of the substrate, the influence of the viscosity of the peeling liquid on the flow rate can be sufficiently suppressed. Therefore, as long as the apparent size of the removal object is greater than the thickness of the boundary layer in the flow of the stripping liquid, the energy received by the removal object from the stripping liquid flowing on the substrate surface can be sufficiently increased. Therefore, the object to be removed can be easily peeled off from the substrate, and can be quickly removed to the outside of the substrate together with the peeling liquid.

In one embodiment of the present invention, the removal object amplification step includes a treatment film formation step of curing or hardening the treatment liquid supplied to the substrate surface to form a treatment film holding the removal object on the substrate surface, The removing step includes a step of peeling the object to be removed together with the treatment film from the surface of the substrate.

According to this method, by curing or hardening the processing liquid, a processing film can be formed on the substrate surface. The object to be removed is held by the processing film, so the apparent size of the object to be removed can be enlarged to the size of the processing film. Then, by removing the object to be removed together with the processing film, the object to be removed can be removed from the surface of the substrate while maintaining the state in which the apparent size is enlarged to the size of the processing film. Therefore, the energy received by the removal object from the flow of the stripping liquid can be sufficiently increased.

In one embodiment of the present invention, the removing step includes a through-hole forming step in which the processing film is partially dissolved by the peeling liquid and a through-hole is formed in the processing film. Therefore, the peeling liquid easily reaches the vicinity of the substrate surface. Therefore, the peeling liquid can act on the interface between the processing film and the substrate to efficiently peel off the processing film from the substrate. On the other hand, since the part other than the part where the through-hole is formed in the processing film is not dissolved by the peeling liquid and maintains the solid state, the state in which the apparent size of the object to be removed is enlarged can be maintained. Therefore, the object to be removed can be efficiently peeled off the surface of the substrate, and the energy received by the object to be removed from the flow of the peeling liquid can be sufficiently increased.

In one embodiment of the present invention, the removal step further includes a peeling liquid entry step for allowing the peeling liquid to enter between the processing film and the substrate surface through the through hole. Therefore, the peeling liquid can act on the interface between the processing film and the substrate to further efficiently peel off the processing film from the substrate surface.

In one embodiment of the present invention, the treatment liquid includes: a solute having a first component and a second component having a lower solubility in the stripping liquid than the first component; and a solvent dissolving the solute . In addition, the treatment film forming step includes a step of forming the treatment film having a first solid formed of the first component and a second solid formed of the second component.

According to this method, the solubility of the first component in the peeling liquid is higher than that of the second component. Therefore, the first solid formed by the first component is more soluble in the peeling liquid than the second solid formed by the second component. Therefore, by supplying the peeling liquid to the substrate surface, the peeling liquid mainly dissolves the first solid and reaches the vicinity of the substrate surface. Therefore, for the stripping liquid, the stripping liquid can act on the interface between the processing film and the substrate. On the other hand, most of the second solid is not dissolved by the stripping liquid and maintains the solid state. Therefore, the state in which the object to be removed is held in the second solid, that is, the state in which the apparent size of the object to be removed is enlarged can be maintained.

As a result, the object to be removed can be efficiently peeled off from the surface of the substrate, and the energy received by the object to be removed from the peeling liquid flowing on the surface of the substrate can be sufficiently increased.

In one embodiment of the present invention, the content of the second component in the processing liquid is greater than the content of the first component in the processing liquid.

According to this method, compared with a configuration in which the content of the second component in the processing liquid is less than the content of the first component in the processing liquid, the portion of the processing film that is dissolved by the peeling liquid can be reduced. Therefore, it is possible to reduce the number of objects to be removed from the treatment film due to local dissolution of the treatment film. Therefore, most of the objects to be removed can be removed from the substrate surface together with the processing film, so that reattachment to the substrate can be suppressed, and the objects to be removed can be efficiently removed to the outside of the substrate.

In one embodiment of the present invention, the content of the second component in the treatment liquid is less than the content of the first component in the treatment liquid.

According to this method, compared with a configuration in which the content of the second component in the processing liquid is greater than the content of the first component in the processing liquid, the portion of the processing film that is dissolved by the peeling liquid can be increased. Therefore, the treatment film can be split into relatively small pieces. Since the processing film is split into relatively thin film pieces, the film pieces are easily forced to float from the flow of the peeling liquid, and are easily discharged to the outside of the substrate with the flow of the peeling liquid. Therefore, the object to be removed can be efficiently removed from the substrate together with the processing film.

In one embodiment of the present invention, the first component and the second component are synthetic resins.

An embodiment of the present invention provides a substrate processing apparatus including: a processing liquid supply unit that supplies a processing liquid to a surface of a substrate; a solid forming unit that solidifies or hardens the processing liquid; and a peeling liquid supply unit that faces the above The substrate surface is supplied with a peeling liquid; and a controller that controls the processing liquid supply unit, the solid forming unit, and the peeling liquid supply unit.

Moreover, the controller is programmed to execute: a processing liquid supply process that supplies the processing liquid from the processing liquid supply unit to the substrate surface; and an object removal amplification process that supplies the solid forming unit to The treatment liquid on the surface of the substrate is cured or hardened to enlarge the apparent size of the object to be removed present on the surface of the substrate; and a removal step in which the peeling liquid is supplied to the surface of the substrate from the peeling liquid supply unit Then, the object to be removed whose apparent size is enlarged is peeled from the surface of the substrate, and the object to be removed is removed from the surface of the substrate while maintaining the state where the apparent size of the object to be removed is enlarged.

According to this configuration, by curing or hardening the treatment liquid in contact with the object to be removed, the apparent size of the object to be removed is enlarged. The removal object whose apparent size is enlarged reaches a position farther from the surface of the substrate than the removal object of the original size. Therefore, the energy received by the removal object from the stripping liquid flowing on the surface of the substrate can be increased. Therefore, it is easy to peel the object to be removed from the substrate.

Then, the object to be removed is peeled from the substrate in a state where the apparent size is enlarged, and is removed from the substrate surface together with the peeling liquid. Therefore, after the object to be removed is peeled off from the surface of the substrate, the state where the energy received by the object to be removed from the peeling liquid flowing on the surface of the substrate is increased can also be maintained. Therefore, the object to be removed can be quickly removed to the outside of the substrate together with the peeling liquid.

As a result, the object to be removed present on the substrate surface can be efficiently removed.

In one embodiment of the present invention, the controller is programmed to: in the removal object enlargement step, the apparent size of the removal object becomes larger in the thickness direction of the substrate in the thickness direction of the substrate than along the surface of the substrate The thickness of the boundary layer in the flow of the stripping solution enlarges the apparent size of the object to be removed.

At a position closer to the surface of the substrate than the thickness of the boundary layer in the thickness direction of the substrate, the flow rate of the peeling liquid decreases due to the viscosity of the peeling liquid. At a position farther from the substrate surface than the thickness of the boundary layer in the thickness direction of the substrate, the influence of the viscosity of the peeling liquid on the flow rate can be sufficiently suppressed. Therefore, as long as the apparent size of the removal object is greater than the thickness of the boundary layer in the flow of the stripping liquid, the energy received by the removal object from the stripping liquid flowing on the substrate surface can be sufficiently increased. Therefore, the object to be removed can be easily peeled off from the substrate, and can be quickly removed to the outside of the substrate together with the peeling liquid.

According to an embodiment of the present invention, the controller is programmed to perform a process of curing or hardening the processing liquid supplied to the surface of the substrate in the step of amplifying the object to be removed, and forming a process of holding the object to be removed on the surface of the substrate The processing film forming step of the film, and in the removing step, the object to be removed is peeled off the surface of the substrate together with the processing film.

According to this configuration, by curing or hardening the processing liquid, a processing film can be formed on the surface of the substrate. The object to be removed is held by the processing film, so the apparent size of the object to be removed can be enlarged to the size of the processing film. Then, by removing the object to be removed together with the processing film, the object to be removed can be removed from the surface of the substrate while maintaining the state in which the apparent size is enlarged to the size of the processing film. Therefore, it is possible to sufficiently increase the energy received by the removal object from the stripping liquid flowing on the surface of the substrate.

In one embodiment of the present invention, the controller is programmed to perform a through-hole forming step in which the peeling liquid partially dissolves the processing film and forms a through-hole in the processing film in the removing step. Therefore, the peeling liquid easily reaches the vicinity of the substrate surface. Therefore, the peeling liquid can act on the interface between the processing film and the substrate W to efficiently peel off the processing film from the substrate. On the other hand, since the portion other than the portion where the through-hole is formed in the treatment film is not dissolved by the peeling liquid and maintains the solid state, it is possible to maintain the state in which the apparent size of the object to be removed in the peeling liquid is still enlarged. Therefore, the object to be removed can be efficiently peeled off the surface of the substrate, and the energy received by the object to be removed from the flow of the peeling liquid can be sufficiently increased.

In one embodiment of the present invention, the controller is programmed to allow the peeling liquid to enter between the processing film and the substrate surface through the through hole in the removing step. Therefore, the peeling liquid can act on the interface between the processing film and the substrate to further efficiently peel off the processing film from the substrate surface.

In one embodiment of the present invention, the treatment liquid includes: a solute having a first component and a second component having a lower solubility in the stripping liquid than the first component; and a solvent dissolving the solute . In addition, the controller is programmed to form the processing film including the first solid formed by the first component and the second solid formed by the second component in the processing film forming step.

According to this configuration, the solubility of the first component in the stripping liquid is higher than that of the second component. Therefore, the first solid formed by the first component is more soluble in the peeling liquid than the second solid formed by the second component. Therefore, by supplying the peeling liquid to the substrate surface, the peeling liquid mainly dissolves the first solid and reaches the vicinity of the substrate surface. Therefore, for the peeling liquid, the peeling liquid acts on the interface between the processing film and the substrate, and the processing film in a state where the removal target is maintained can be efficiently peeled from the substrate surface. On the other hand, since most of the second solid is not dissolved by the stripping liquid and maintains the solid state, the state in which the apparent size of the object to be removed is enlarged can be maintained.

As a result, the object to be removed can be efficiently peeled off from the surface of the substrate, and the energy received by the object to be removed from the peeling liquid flowing on the surface of the substrate can be sufficiently increased.

In one embodiment of the present invention, the content of the second component in the processing liquid is greater than the content of the first component in the processing liquid.

According to this configuration, compared with a configuration in which the content of the second component in the processing liquid is less than the content of the first component in the processing liquid, the portion of the processing film that is dissolved by the peeling liquid can be reduced. Therefore, it is possible to reduce the number of objects to be removed from the treatment film due to local dissolution of the treatment film. Therefore, most of the objects to be removed can be removed from the substrate surface together with the processing film, so that reattachment to the substrate can be suppressed, and the objects to be removed can be efficiently removed to the outside of the substrate.

In one embodiment of the present invention, the content of the second component in the treatment liquid is less than the content of the first component in the treatment liquid.

According to this configuration, compared with the configuration in which the content of the second component in the processing liquid is greater than the content of the first component in the processing liquid, the portion of the processing film that is dissolved by the peeling liquid can be increased. Therefore, the treatment film can be split into relatively small pieces. Since the processing film is split into relatively thin film pieces, the film pieces are easily forced to float from the flow of the peeling liquid, and are easily discharged to the outside of the substrate with the flow of the peeling liquid. Therefore, the object to be removed can be efficiently removed from the substrate together with the processing film.

In one embodiment of the present invention, the first component and the second component are synthetic resins.

The above-mentioned, or further other objects, features, and effects in the present invention will be clarified by the description of the embodiments described below with reference to the accompanying drawings.

FIG. 1 is a schematic plan view showing the layout of a substrate processing apparatus 1 according to an embodiment of the present invention.

The substrate processing apparatus 1 is a monolithic apparatus that processes a substrate W such as a silicon wafer piece by piece. In this embodiment, the substrate W is a disc-shaped substrate.

The substrate processing apparatus 1 includes: a plurality of processing units 2 for processing a substrate W with a fluid; a load port LP for placing a carrier C for accommodating a plurality of substrates W processed by the processing unit 2, a load port LP and processing The transfer robots IR and CR that transfer the substrate W between the units 2 and the controller 3 that controls the substrate processing apparatus 1.

The transfer robot IR transfers the substrate W between the carrier C and the transfer robot CR. The transfer robot CR transfers the substrate W between the transfer robot IR and the processing unit 2. The plurality of processing units 2 have the same configuration, for example. In detail, as will be described later, the processing fluid supplied to the substrate W in the processing unit 2 includes a chemical solution, a rinse solution, a processing solution, a peeling solution, a buffer solution, a heat medium, an inert gas, and the like.

Each processing unit 2 includes a chamber 4 and a processing cup 7 disposed in the chamber 4, and performs processing on the substrate W in the processing cup 7. An entrance (not shown) is formed in the chamber 4 to carry the substrate W into the chamber 4 or to carry the substrate W out of the chamber 4. The chamber 4 includes a baffle unit (not shown) that opens and closes the entrance.

FIG. 2 is a schematic diagram for explaining a configuration example of the processing unit 2. The processing unit 2 further includes a rotating chuck 5, an opposing member 6, a first moving nozzle 8, a second moving nozzle 9, a third moving nozzle 10, a center nozzle 11, and a lower surface nozzle 12.

The rotary chuck 5 horizontally holds the substrate W while rotating it around a vertical rotation axis A1 (vertical axis) passing through the central portion of the substrate W. The rotating chuck 5 includes a plurality of chuck pins 20, a rotating base 21, a rotating shaft 22, and a rotating motor 23.

The rotating base 21 has a circular plate shape along the horizontal direction. On the upper surface of the rotating base 21, a plurality of chuck pins 20 that hold the periphery of the substrate W are arranged at intervals in the circumferential direction of the rotating base 21. The rotating base 21 and the plurality of chuck pins 20 constitute a substrate holding unit that holds the substrate W horizontally. The substrate holding unit is also called a substrate holder.

The rotation shaft 22 extends in the vertical direction along the rotation axis A1. The upper end of the rotating shaft 22 is coupled to the center of the lower surface of the rotating base 21. The rotating motor 23 applies a rotating force to the rotating shaft 22. By rotating the rotary shaft 22 by the rotary motor 23, the rotary base 21 is rotated. Thereby, the substrate W rotates about the rotation axis A1. The rotation motor 23 is an example of a substrate rotation unit that rotates the substrate W about the rotation axis A1.

The opposing member 6 is opposed to the substrate W held by the rotary chuck 5 from above. The opposing member 6 is formed in a disk shape having a diameter substantially the same as or larger than the substrate W. The facing member 6 has a facing surface 6a facing the upper surface (upper surface) of the substrate W. The opposing surface 6a is arranged closer to the upper side than the rotary chuck 5 along a substantially horizontal plane.

A hollow shaft 60 is fixed to the opposing member 6 on the side opposite to the opposing surface 6a. A communication hole 6 b is formed in a portion of the opposing member 6 that overlaps with the rotation axis A1 in a plan view. The communication hole 6 b penetrates the opposing member 6 up and down, and communicates with the internal space 60 a of the hollow shaft 60.

The opposing member 6 blocks the environment in the space between the opposing surface 6a and the upper surface of the substrate W from the environment outside the space. Therefore, the opposing member 6 is also called a barrier.

The processing unit 2 further includes an opposing member lifting unit 61 that drives the lifting of the opposing member 6. The opposing member lifting unit 61 can position the opposing member 6 at any position (height) from the lower position to the upper position. The lower position refers to the position where the opposing surface 6a is closest to the substrate W within the movable range of the opposing member 6. The upper position refers to the position where the opposing surface 6a is farthest from the substrate W within the movable range of the opposing member 6.

The counter member lifting unit 61 includes, for example, a ball screw mechanism (not shown) combined with a support member (not shown) supporting the hollow shaft 60, and an electric motor (not shown) that applies a driving force to the ball screw mechanism .

The processing bearing cup 7 includes: a plurality of protection bodies 71 that catch the liquid scattered outward from the substrate W held by the rotary chuck 5 and a plurality of support cups 72 that catch the liquid guided downward by the plurality of protection bodies 71, And a cylindrical outer wall member 73 surrounding the plurality of shields 71 and the plurality of receiving cups 72.

In this embodiment, it is shown that two protective bodies 71 (first protective body 71A and second protective body 71B) and two bearing cups 72 (first bearing cup 72A and second bearing cup 72B) are provided. example.

The first receiving cup 72A and the second receiving cup 72B each have a shape of an annular groove opened upward.

The first shield 71A is arranged to surround the rotating base 21. The second guard 71B is arranged so as to surround the rotation base 21 outward of the first guard 71A in the rotational diameter direction of the substrate W.

The first shield 71A and the second shield 71B each have a substantially cylindrical shape, and the upper end of the first shield 71A and the upper end of the second shield 71B are inclined inwardly toward the rotating base 21.

The first receiving cup 72A receives the liquid guided downward by the first shield 71A. The second receiving cup 72B is formed integrally with the first shield 71A, and receives the liquid guided downward by the second shield 71B.

The processing unit 2 includes a shield lifting unit 74 that lifts the first shield 71A and the second shield 71B, respectively. The shield raising/lowering unit 74 lifts the first shield 71A between the lower position and the upper position. The shield lifting unit 74 lifts the second shield 71B between the lower position and the upper position.

When both the first shield 71A and the second shield 71B are in the upper position, the liquid scattered from the substrate W is caught by the first shield 71A. When the first shield 71A is in the lower position and the second shield 71B is in the upper position, the liquid scattered from the substrate W is caught by the second shield 71B.

The shield lifting unit 74 includes, for example, a first ball screw mechanism (not shown) coupled to the first shield 71A, a first motor (not shown) that applies a driving force to the first ball screw, and a second shield 71B combines a second ball screw mechanism (not shown) and a second motor (not shown) that applies a driving force to the second ball screw mechanism.

The first movable nozzle 8 is an example of a chemical solution supply unit that supplies (discharges) a chemical solution toward the upper surface of the substrate W held by the rotary chuck 5.

The first moving nozzle 8 is moved in the horizontal direction and the vertical direction by the first nozzle moving unit 36. The first moving nozzle 8 can move between the center position and the starting position (retracted position). When the first moving nozzle 8 is at the center position, it faces the rotation center of the upper surface of the substrate W. The so-called center of rotation of the upper surface of the substrate W refers to the intersection position of the upper surface of the substrate W and the rotation axis A1.

When the first moving nozzle 8 is at the starting position, it does not face the upper surface of the substrate W, and is located outside the processing socket 7 in a plan view. The first moving nozzle 8 can approach the upper surface of the substrate W or retreat upward from the upper surface of the substrate W by moving in the vertical direction.

The first nozzle moving unit 36 includes, for example, a rotating shaft (not shown) along the vertical direction, a support arm (not shown) extending horizontally in conjunction with the rotating shaft, and raising or lowering the rotating shaft The rotating shaft drive unit (not shown).

The rotating shaft drive unit swings the support arm by rotating the rotating shaft around a vertical rotating axis. Furthermore, the rotary shaft drive unit moves the support arm up and down by raising and lowering the rotary shaft in the vertical direction. The first moving nozzle 8 is fixed to the arm. The first movable nozzle 8 moves in the horizontal direction and the vertical direction according to the swing and elevation of the arm.

The first moving nozzle 8 is connected to a chemical liquid pipe 40 for guiding the chemical liquid. When the chemical liquid valve 50 interposed in the chemical liquid pipe 40 is opened, the chemical liquid is continuously discharged downward from the first moving nozzle 8.

The chemical liquid ejected from the first moving nozzle 8 includes, for example, sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, ammonia water, hydrogen peroxide water, organic acids (such as citric acid, oxalic acid, etc.), organic bases (such as TMAH: hydrogen Liquid of at least one of tetramethylammonium oxide, etc.), surfactant, and preservative. Examples of the chemical solution obtained by mixing these include SPM solution (sulfuric acid/hydrogen peroxide mixture: sulfuric acid hydrogen peroxide water mixture) and SC1 solution (ammonia-hydrogen peroxide mixture: ammonia hydrogen peroxide water mixture Fluid) etc.

The second moving nozzle 9 is an example of a processing liquid supply unit that supplies (discharges) a processing liquid toward the upper surface of the substrate W held by the rotary chuck 5.

The second moving nozzle 9 is moved in the horizontal direction and the vertical direction by the second nozzle moving unit 37. The second moving nozzle 9 can move between the center position and the starting position (retracted position). When the second movable nozzle 9 is located at the center position, it faces the rotation center of the upper surface of the substrate W.

When the second moving nozzle 9 is at the starting position, it does not face the upper surface of the substrate W, and is located outside the processing socket 7 in a plan view. By moving in the vertical direction, the second moving nozzle 9 can approach the upper surface of the substrate W or retreat upward from the upper surface of the substrate W.

The second nozzle moving unit 37 has the same configuration as the first nozzle moving unit 36. That is, the second nozzle moving unit 37 includes, for example, a rotating shaft (not shown) along the vertical direction, a support arm (not shown) that extends horizontally in conjunction with the rotating shaft and the second moving nozzle 9, And a rotary shaft drive unit (not shown) that raises or lowers the rotary shaft.

The second moving nozzle 9 is connected to the processing liquid pipe 41 that guides the processing liquid. When the processing liquid valve 51 interposed in the processing liquid piping 41 is opened, the processing liquid is continuously discharged downward from the second moving nozzle 9.

The processing liquid ejected from the second moving nozzle 9 contains solute and solvent. The treatment liquid is solidified or hardened by volatilization of at least a part of the solvent. The treatment liquid is cured or hardened on the substrate W to form a treatment film that holds the removal object such as particles present on the substrate W.

Here, the term "solidification" refers to, for example, the evaporation (evaporation) of a solvent, and the solute is solidified by a force acting between molecules or atoms. The term "hardening" means, for example, that the solute is solidified by chemical changes such as polymerization or cross-linking. Therefore, the so-called "solidification or hardening" means that the solute "solidifies" due to various reasons.

The solute in the treatment liquid ejected from the second moving nozzle 9 contains the first component and the second component. The amount (content) of the first component contained in the treatment liquid is less than the amount (content) of the second component contained in the treatment liquid.

The first component and the second component are, for example, synthetic resins having different properties from each other. The solvent contained in the processing liquid ejected from the second moving nozzle 9 may be any liquid that dissolves the first component and the second component.

Examples of synthetic resins used as solutes include acrylic resins, phenol resins, epoxy resins, melamine resins, urea resins, unsaturated polyester resins, alkyd resins, polyurethanes, and polyamides. Imine, polyethylene, polypropylene, polyvinyl chloride, polystyrene, polyvinyl acetate, polytetrafluoroethylene, acrylonitrile butadiene styrene resin, acrylonitrile styrene resin, polyamidoamine, polyacetal, Polycarbonate, polyvinyl alcohol, modified polyphenylene ether, polybutylene terephthalate, polyethylene terephthalate, polyphenylene sulfide, polysulfone, polyether ether ketone, polyamidoamide Amines, etc.

Examples of solvents that dissolve synthetic resins include IPA (isopropyl alcohol), PGEE (propylene glycol monoethyl ether), PGMEA (propylene glycol 1-monomethyl ether 2-acetate), and EL (ethyl lactate) Wait.

The third moving nozzle 10 is an example of a peeling liquid supply unit that supplies (ejects) a peeling liquid toward the upper surface of the substrate W held by the rotary chuck 5. In this embodiment, it is directed toward the substrate W held by the rotary chuck 5. An example of a buffer supply unit that supplies (discharges) a buffer on the upper surface.

The third moving nozzle 10 is moved in the horizontal direction and the vertical direction by the third nozzle moving unit 38. The third moving nozzle 10 can move between the center position and the starting position (retracted position).

When the third moving nozzle 10 is at the center position, it faces the rotation center of the upper surface of the substrate W. When the third moving nozzle 10 is at the starting position, it does not face the upper surface of the substrate W, and is located outside the processing socket 7 in a plan view. The third movable nozzle 10 can approach the upper surface of the substrate W or retreat upward from the upper surface of the substrate W by moving in the vertical direction.

The third nozzle moving unit 38 has the same configuration as the first nozzle moving unit 36. That is, the third nozzle moving unit 38 includes, for example, a rotating shaft (not shown) along the vertical direction, a support arm (not shown) that extends horizontally in conjunction with the rotating shaft and the third moving nozzle 10, A rotating shaft drive unit (not shown) that raises or lowers the rotating shaft.

The third moving nozzle 10 is connected to the peeling liquid piping 42 that guides the peeling liquid above the third moving nozzle 10. When the upper peeling liquid valve 52 installed above the upper peeling liquid pipe 42 is opened, the peeling liquid is continuously discharged downward from the discharge port of the third moving nozzle 10.

The third moving nozzle 10 is also connected to the buffer piping 43 that guides the buffer to the third moving nozzle 10. When the upper buffer valve 53 interposed above the upper buffer pipe 43 is opened, the buffer solution is continuously discharged downward from the discharge port of the third moving nozzle 10.

The peeling liquid is a liquid for peeling the processing film on the substrate W from the upper surface of the substrate W. As the stripping liquid, a liquid that is easier to dissolve the first component contained in the solute of the processing liquid than the second component contained in the solute of the processing liquid is used. In other words, as the peeling liquid, a liquid in which the solubility (solubility) of the first component in the peeling liquid is higher than the solubility (solubility) of the second component in the peeling liquid. The stripping liquid is preferably a liquid that is compatible with (miscible with) the solvent contained in the treatment liquid.

The stripping liquid is, for example, an aqueous stripping liquid. Examples of the aqueous stripping liquid include DIW, carbonated water, electrolytic ionized water, hydrogen water, ozone water, and hydrochloric acid water and alkali with a diluted concentration (for example, about 10 ppm to 100 ppm). Aqueous solution. Examples of alkaline aqueous solutions include aqueous solutions of quaternary ammonium hydroxide such as SC1 solution, aqueous ammonia solution, TMAH, and aqueous choline solution.

The buffer solution is a liquid used to buffer the peeling effect of the peeling solution on the processing film. By supplying a buffer solution to the processing membrane before the stripping solution, it is possible to prevent a high concentration of the stripping solution from acting on a part of the processing membrane. Thereby, by supplying the buffer solution to the processing membrane before the supply of the peeling fluid in advance, the peeling fluid can act on the entire processing membrane without omission.

Examples of the buffer solution include DIW, carbonated water, electrolytic ionized water, hydrochloric acid water with a diluted concentration (for example, about 1 ppm to 100 ppm), ammonia water with a diluted concentration (for example, about 1 ppm to 100 ppm), and reduced water ( Hydrogen water) etc. That is, as the buffer solution, the same liquid as the rinse solution can be used.

The center nozzle 11 is accommodated in the internal space 60a of the hollow shaft 60 of the facing member 6. The discharge port 11a provided at the front end of the center nozzle 11 faces the center region of the upper surface of the substrate W from above. The central area of the upper surface of the substrate W refers to an area including the rotation center of the substrate W on the upper surface of the substrate W.

The center nozzle 11 includes a plurality of tubes (first tube 31, second tube 32, and third tube 33) that eject fluid downward, and a cylindrical housing 30 that surrounds the plurality of tubes. The plurality of tube bodies and the housing 30 extend in the vertical direction along the rotation axis A1. The discharge port 11a of the center nozzle 11 is the discharge port of the first tube body 31, the discharge port of the second tube body 32, and the discharge port of the third tube body 33.

The first tube 31 is an example of a rinse liquid supply unit that supplies rinse liquid to the upper surface of the substrate W. The second tube body 32 is an example of a gas supply unit that supplies gas between the upper surface of the substrate W and the facing surface 6a of the facing member 6. The third tube 33 is an example of an organic solvent supply unit that supplies an organic solvent such as IPA to the upper surface of the substrate W.

The first pipe body 31 is connected to the rinse liquid pipe 44 that guides the rinse liquid to the upper side of the first pipe body 31. When the upper rinse liquid valve 54 interposed on the upper rinse liquid pipe 44 is opened, the rinse liquid is continuously discharged from the first pipe body 31 (center nozzle 11) to the central area of the upper surface of the substrate W.

Examples of the rinsing liquid include DIW, carbonated water, electrolytic ionized water, hydrochloric acid water with a diluted concentration (for example, about 1 ppm to 100 ppm), ammonia water with a diluted concentration (for example, about 1 ppm to 100 ppm), and reduced water ( Hydrogen water) etc. The rinse liquid is the same liquid as the buffer liquid, so the first tube 31 is also an example of the buffer liquid supply unit.

The second pipe body 32 is connected to a gas pipe 45 that guides gas to the second pipe body 32. When the gas valve 55 interposed in the gas pipe 45 is opened, gas is continuously discharged downward from the second pipe body 32 (center nozzle 11).

The gas ejected from the second pipe body 32 is, for example, an inert gas such as nitrogen (N ₂ ). The gas ejected from the second pipe body 32 may be air. The inert gas is not limited to nitrogen, and is a gas that is inert with respect to the upper surface of the substrate W or the pattern formed on the upper surface of the substrate W. As an example of the inert gas, in addition to nitrogen, rare gases such as argon can be cited.

The third tube 33 is connected to the organic solvent piping 46 that guides the organic solvent to the third tube 33. When the organic solvent valve 56 interposed in the organic solvent piping 46 is opened, the organic solvent is continuously discharged from the third tube 33 (center nozzle 11) toward the center area of the upper surface of the substrate W.

The organic solvent ejected from the third tube 33 is a residue removal liquid that removes residues remaining on the upper surface of the substrate W after removing the treatment film by the stripping liquid. The organic solvent ejected from the third tube 33 preferably has compatibility with the treatment liquid and the rinse liquid.

Examples of the organic solvent ejected from the third tube 33 include a liquid including at least one of IPA, HFE (hydrofluoroether), methanol, ethanol, acetone, and trans-1,2-dichloroethylene. .

In addition, the organic solvent ejected from the third tube 33 does not need to be composed of only a single component, and may be a mixed liquid with other components. For example, it may be a mixed liquid of IPA and DIW, or a mixed liquid of IPA and HFE.

The lower surface nozzle 12 is inserted into a through-hole 21 a that opens at the center of the upper surface of the rotating base 21. The discharge port 12a of the lower surface nozzle 12 is exposed from the upper surface of the rotating base 21. The discharge port 12a of the lower surface nozzle 12 faces the central region of the lower surface of the substrate W from below. The so-called central area of the lower surface of the substrate W refers to the area including the rotation center of the substrate W at the lower surface of the substrate W.

The lower surface nozzle 12 is connected to one end of a common pipe 80 that guides the rinse liquid, the peeling liquid, and the heat medium to the lower surface nozzle 12 in common. The other end of the common pipe 80 is connected to the common pipe 80 to guide the rinsing liquid under the rinsing liquid pipe 81, the common pipe 80 to guide the stripping liquid under the stripping liquid pipe 82, and the common pipe 80 to guide the heat medium heat medium Piping 83.

When the rinsing liquid valve 86 interposed under the lower rinsing liquid pipe 81 is opened, the rinsing liquid is continuously discharged from the lower surface nozzle 12 toward the central region of the lower surface of the substrate W. When the lower peeling liquid valve 87 interposed under the lower peeling liquid pipe 82 is opened, the peeling liquid is continuously discharged from the lower surface nozzle 12 toward the central region of the lower surface of the substrate W. When the heat medium valve 88 interposed in the heat medium pipe 83 is opened, the heat medium is continuously discharged from the lower surface nozzle 12 toward the central region of the lower surface of the substrate W.

The lower surface nozzle 12 is an example of a lower rinse liquid supply unit that supplies a rinse liquid to the lower surface of the substrate W. The liquid used as the rinse liquid can also be used as the buffer liquid, so the lower surface nozzle 12 is also an example of the lower buffer liquid supply unit.

In addition, the lower surface nozzle 12 is an example of a lower peeling liquid supply unit that supplies peeling liquid to the lower surface of the substrate W. In addition, the lower surface nozzle 12 is an example of a heat medium supply unit that supplies the heat medium for heating the substrate W to the substrate W. The lower surface nozzle 12 is also a substrate heating unit that heats the substrate W.

The heat medium ejected from the lower surface nozzle 12 is, for example, a high-temperature DIW that is higher than room temperature and lower than the boiling point of the solvent contained in the processing liquid (for example, 60°C to 80°C). The heat medium sprayed from the lower surface nozzle 12 is not limited to high-temperature DIW, but may also be high-temperature inert gas or high-temperature air that is higher than room temperature and lower than the boiling point of the solvent contained in the processing liquid (for example, 60°C to 80°C) Wait for high temperature gas.

3 is a block diagram showing the electrical configuration of the main part of the substrate processing apparatus 1. The controller 3 includes a microcomputer, and controls the control target included in the substrate processing apparatus 1 according to a specific control process type.

Specifically, the controller 3 includes a processor (CPU) 3A and a memory 3B that stores a control process type. The controller 3 is configured to execute various controls for processing the substrate by causing the processor 3A to execute a control procedure.

In particular, the controller 3 is programmed to protect the transport robots IR, CR, rotary motor 23, first nozzle moving unit 36, second nozzle moving unit 37, third nozzle moving unit 38, counter member lifting unit 61, and Body lifting unit 74, chemical liquid valve 50, processing liquid valve 51, upper peeling liquid valve 52, upper buffer valve 53, upper flushing liquid valve 54, gas valve 55, organic solvent valve 56, lower flushing liquid valve 86, lower The side peeling liquid valve 87 and the heat medium valve 88 are controlled.

FIG. 4 is a flowchart for explaining an example of substrate processing by the substrate processing apparatus 1. In FIG. 4, the processing realized by making the controller 3 execute a program is mainly shown. 5A to 5H are schematic diagrams for explaining the status of each step of the substrate processing described above.

In the substrate processing by the substrate processing apparatus 1, for example, as shown in FIG. 4, the substrate loading step (step S1), the chemical solution supply step (step S2), the first rinsing step (step S3), the first 1 Organic solvent supply step (step S4), processing liquid supply step (step S5), thinning step (step S6), heating step (step S7), buffer step (step S8), removal step (step S9), second The rinse step (step S10), the second organic solvent supply step (step S11), the spin drying step (step S12), and the substrate carry-out step (step S13).

First, the unprocessed substrate W is transferred into the processing unit 2 from the carrier C by the transfer robots IR and CR (refer to FIG. 1 ), and transferred to the rotary chuck 5 (step S1 ). Thereby, the substrate W is horizontally held by the rotary chuck 5 (substrate holding step). The holding of the substrate W by the spin chuck 5 continues until the spin drying process (step S12) ends. When the substrate W is carried in, the opposing member 6 is retracted to the upper position.

Next, after the transfer robot CR is retracted to the outside of the processing unit 2, the chemical solution supply process is started (step S2). Specifically, the rotation motor 23 rotates the rotation base 21. With this, the substrate W held horizontally is rotated (substrate rotation step). Then, the shield lifting unit 74 moves the first shield 71A and the second shield 71B to the upper position.

Then, the first nozzle moving unit 36 moves the first moving nozzle 8 to the processing position. The processing position of the first moving nozzle 8 is, for example, the center position. Then, the liquid medicine valve 50 is opened. Thereby, the chemical liquid is supplied (discharged) from the first moving nozzle 8 to the central region of the upper surface of the substrate W in the rotating state. In the chemical solution supply process, the substrate W is rotated at a specific chemical solution rotation speed, for example, 800 rpm.

The chemical solution supplied to the upper surface of the substrate W expands radially by centrifugal force and spreads over the entire upper surface of the substrate W. With this, the upper surface of the substrate W is treated with the chemical solution. The discharge of the chemical liquid from the first moving nozzle 8 lasts for a specific time, for example, 30 seconds.

Next, the first rinse process (step S3) is started. In the first rinsing step, the chemical solution on the substrate W is washed away by the rinsing liquid.

Specifically, the chemical liquid valve 50 is closed. With this, the supply of the chemical liquid to the substrate W is stopped. Then, the first nozzle moving unit 36 moves the first moving nozzle 8 to the starting position. Then, the opposing member lifting unit 61 moves the opposing member 6 to the processing position between the upper position and the lower position. When the opposing member 6 is located at the processing position, the distance between the upper surface of the substrate W and the opposing surface 6a is, for example, 30 mm. In the first rinsing step, the positions of the first shield 71A and the second shield 71B are maintained at the upper positions.

Then, the upper flushing fluid valve 54 is opened. With this, the rinse liquid is supplied (discharged) from the central nozzle 11 to the central region of the upper surface of the substrate W in the rotating state. Furthermore, the lower flushing valve 86 is opened. Thereby, the rinse liquid is supplied (discharged) from the lower surface nozzle 12 to the central region of the lower surface of the substrate W in the rotating state. In the first rinsing step, the substrate W is rotated at a specific first rinsing rotation speed, for example, 800 rpm.

The rinse liquid supplied from the central nozzle 11 to the upper surface of the substrate W is radially spread by centrifugal force and spreads over the entire upper surface of the substrate W. Thereby, the chemical solution on the upper surface of the substrate W is washed to the outside of the substrate W.

The rinsing liquid supplied from the lower surface nozzle 12 to the lower surface of the substrate W expands radially by centrifugal force and spreads over the entire lower surface of the substrate W. That is, in the case where the chemical liquid scattered from the substrate W due to the chemical liquid supply process adheres to the lower surface, the chemical liquid adhering to the lower surface is washed by the rinse liquid supplied from the lower surface nozzle 12. The discharge of the rinsing liquid from the central nozzle 11 and the lower surface nozzle 12 lasts for a specific time, for example, 30 seconds.

Next, the first organic solvent supply step (step S4) is started. In the first organic solvent supply step, the rinse liquid on the substrate W is replaced with an organic solvent.

Specifically, the upper flushing liquid valve 54 and the lower flushing liquid valve 86 are closed. As a result, the supply of the rinse liquid to the upper and lower surfaces of the substrate W is stopped. Then, the guard lifting unit 74 moves the first guard 71A to the lower position while maintaining the second guard 71B at the upper position. The opposing member 6 is maintained at the processing position.

In the first organic solvent supply step, the substrate W is rotated at a specific first organic solvent rotation speed, for example, 300 rpm to 1500 rpm. The substrate W does not need to rotate at a fixed rotation speed in the first organic solvent supply step. For example, the rotary motor 23 may rotate the substrate W at 300 rpm when the supply of the organic solvent starts, and accelerate the rotation of the substrate W while supplying the organic solvent to the substrate W until the rotation speed of the substrate W becomes 1500 rpm.

Then, the organic solvent valve 56 is opened. With this, the organic solvent is supplied (ejected) from the central nozzle 11 to the central region of the upper surface of the substrate W in the rotating state.

The organic solvent supplied from the central nozzle 11 to the upper surface of the substrate W is radially spread by centrifugal force and spreads over the entire upper surface of the substrate W. Thereby, the rinse liquid on the substrate W is replaced with an organic solvent. The ejection of the organic solvent from the central nozzle 11 lasts for a specific time, for example, 10 seconds.

Next, the processing liquid supply step is started (step S5). Specifically, the organic solvent valve 56 is closed. With this, the supply of the organic solvent to the substrate W is stopped. Then, the opposing member lifting unit 61 moves the opposing member 6 to the upper position. Then, the shield lifting unit 74 moves the first shield 71A to the upper position. In the processing liquid supply process, the substrate W is rotated at a specific processing liquid rotation speed, for example, 10 rpm to 1500 rpm.

Then, as shown in FIG. 5A, the second nozzle moving unit 37 moves the second moving nozzle 9 to the processing position. The processing position of the second moving nozzle 9 is, for example, the center position. Then, the processing liquid valve 51 is opened. Thereby, the processing liquid is supplied (discharged) from the second moving nozzle 9 to the central region of the upper surface of the substrate W in the rotating state (processing liquid supply process, processing liquid discharge process). Thereby, the organic solvent on the substrate W is replaced with the processing liquid, and a liquid film of the processing liquid (processing liquid film 101) is formed on the substrate W (processing liquid film forming step). The supply of the processing liquid from the second moving nozzle 9 lasts for a specific time, for example, 2 seconds to 4 seconds.

Next, a process film formation process is performed (step S6 and step S7). In the processing film forming step, the processing liquid on the substrate W is cured or hardened to form the processing film 100 on the upper surface of the substrate W (see FIG. 5C ).

In the process film forming process, a thinning process (rotation stop process) is performed (step S6). In the thinning process, first, the processing liquid valve 51 is closed. With this, the supply of the processing liquid to the substrate W is stopped. Then, the second nozzle moving unit 37 moves the second moving nozzle 9 to the starting position.

As shown in FIG. 5B, in the thinning process, centrifugal force is applied from the substrate W in a state where the supply of the processing liquid to the upper surface of the substrate W is stopped so that the thickness of the processing liquid film 101 on the substrate W becomes an appropriate thickness. The upper surface excludes a part of the treatment liquid. In the thinning process, the opposing member 6, the first shield 71A, and the second shield 71B are maintained at the upper position.

In the thinning process, the rotary motor 23 changes the rotation speed of the substrate W to a specific thinning speed. The thinning speed is, for example, 300 rpm to 1500 rpm. The rotation speed of the substrate W may be kept constant within the range of 300 rpm to 1500 rpm, or may be appropriately changed within the range of 300 rpm to 1500 rpm during the thinning process. The thinning process is performed for a specific time, for example, 30 seconds.

Referring to FIG. 5C, in the process film forming process, the heating process of heating the substrate W is performed after the thinning process (step S7). In the heating process, in order to volatilize (evaporate) a part of the solvent of the processing liquid on the substrate W, the processing liquid film 101 (see FIG. 5B) on the substrate W is heated.

Specifically, the opposing member elevating unit 61 moves the opposing member 6 to a close position between the upper position and the lower position. The approach position can also be the lower position. The approach position is a position where the distance from the upper surface of the substrate W to the facing surface 6a is, for example, 1 mm. In the heating process, the first shield 71A and the second shield 71B are maintained at the upper position.

Then, the gas valve 55 is opened. Thereby, gas is supplied to the space between the upper surface of the substrate W (the upper surface of the processing liquid film 101) and the opposing surface 6a of the opposing member 6 (gas supply step).

Then, the heat medium valve 88 is opened. Thereby, the heat medium is supplied (discharged) from the lower surface nozzle 12 to the central region of the lower surface of the substrate W in the rotating state (heat medium supply process, heat medium discharge process). The heat medium supplied from the lower surface nozzle 12 to the lower surface of the substrate W expands radially by centrifugal force and spreads over the entire lower surface of the substrate W. The supply of the heat medium to the substrate W lasts for a specific time, for example, 60 seconds. In the heating process, the substrate W is rotated at a specific heating speed, for example, 1000 rpm.

By supplying a heat medium to the lower surface of the substrate W, the processing liquid film 101 on the substrate W is heated via the substrate W. Thereby, the evaporation of the solvent in the processing liquid film 101 is promoted (solvent evaporation step, solvent evaporation promotion step). Therefore, the time required for the formation of the processing film 100 can be shortened. The lower surface nozzle 12 functions as an evaporation unit (evaporation promotion unit) that evaporates the solvent in the processing liquid.

The processing film 100 is formed on the substrate W by performing a thinning process and a heating process to cure or harden the processing liquid. In this way, the substrate rotating unit (rotating motor 23) and the lower surface nozzle 12 are included in the solid forming unit that solidifies or hardens the processing liquid to form a solid (processing film 100).

In the heating process, it is preferable to heat the substrate W so that the temperature of the processing liquid on the substrate W does not reach the boiling point of the solvent. By heating the treatment liquid to a temperature that does not reach the boiling point of the solvent, the solvent can be appropriately left in the treatment film 100. This makes it easier to integrate the peeling liquid by the interaction of the solvent remaining in the processing film 100 and the stripping liquid in the subsequent removal step (step S9) compared to the case where no solvent remains in the processing film 100 Into the treatment film 100. Therefore, it is easy to peel off the processing film 100 with the peeling liquid.

The heat medium scattered by the centrifugal force to the outside of the substrate W is received by the first shield 71A. The heat medium caught by the first shield 71A may splash back from the first shield 71A. However, since the opposing member 6 is close to the upper surface of the substrate W, the upper surface of the substrate W can be protected from the heat medium splashed back from the first shield 71A. Therefore, the adhesion of the heat medium to the upper surface of the processing film 100 can be suppressed, so that the generation of particles due to the splashing of the heat medium from the first shield 71A can be suppressed.

Furthermore, by supplying gas from the central nozzle 11, a space from the central region of the upper surface of the substrate W to the upper surface of the substrate W is formed in the space between the opposing surface 6a of the opposing member 6 and the upper surface of the substrate W The airflow F moving around the periphery. The air flow F formed from the central region of the upper surface of the substrate W to the periphery of the upper surface of the substrate W can push the heat medium splashed back from the first shield 71A back to the first shield 71A. Therefore, the adhesion of the heat medium to the upper surface of the treatment film 100 can be further suppressed.

Next, a buffer process is performed (step S8). Specifically, the heat medium valve 88 is closed. With this, the supply of heat medium to the lower surface of the substrate W is stopped. Then, the gas valve 55 is closed. With this, the supply of gas to the space between the opposing surface 6a of the opposing member 6 and the upper surface of the substrate W is stopped.

Then, the opposing member lifting unit 61 moves the opposing member 6 to the upper position. Then, as shown in FIG. 5D, the third nozzle moving unit 38 moves the third moving nozzle 10 to the processing position. The processing position of the third moving nozzle 10 is, for example, the center position. In the buffering process, the substrate W is rotated at a specific buffering rotation speed, for example, 800 rpm.

Then, the upper buffer valve 53 is opened. With this, the buffer solution is supplied (discharged) from the third moving nozzle 10 to the center region of the upper surface of the substrate W in the rotating state (buffer solution supply step, buffer solution discharge step). The buffer supplied to the upper surface of the substrate W is spread to the entire upper surface of the substrate W by centrifugal force. The supply of the buffer solution to the upper surface of the substrate W lasts for a specific time, for example, 60 seconds.

In the next removal step (step S9), the peeling liquid supplied to the substrate W may act locally on the upper surface of the substrate W, especially when the supply of the peeling liquid starts, especially when the concentration of the peeling liquid is high. Therefore, since the buffer solution is supplied to the upper surface of the substrate W before the stripping solution, the buffer stripping solution acts on the processing film 100. Thereby, the peeling liquid can be prevented from locally acting on the upper surface of the substrate W, so that the peeling liquid can act on the entire upper surface of the substrate W without omission.

Next, referring to FIG. 5E, a removal process is performed (step S9). In the removal process, the substrate W is rotated at a specific removal speed, for example, 800 rpm.

Then, the upper buffer valve 53 is closed. With this, the supply of the buffer liquid to the upper surface of the substrate W is stopped. Then, the upper peeling liquid valve 52 is opened. Thereby, the peeling liquid is supplied (discharged) from the third moving nozzle 10 to the center region of the upper surface of the substrate W in the rotating state (upper peeling liquid supply step, upper peeling liquid discharge step). The peeling liquid supplied to the upper surface of the substrate W spreads to the entire upper surface of the substrate W by centrifugal force. The supply of the peeling liquid to the upper surface of the substrate W lasts for a specific time, for example, 60 seconds.

By supplying the peeling liquid to the upper surface of the substrate W, the processing film 100 is peeled from the upper surface of the substrate W. The treatment film 100 is split into a film piece when it is peeled off from the upper surface of the substrate W. Then, the diaphragm of the split processing film 100 is subjected to centrifugal force accompanying the rotation of the substrate W, and is discharged to the outside of the substrate W together with the peeling liquid. As a result, the object to be removed is removed together with the processing film 100 from the upper surface of the substrate W.

Here, in the processing liquid supply step (step S5) shown in FIG. 5A, the processing liquid supplied to the upper surface of the substrate W may flow back to the lower surface of the substrate W along the periphery of the substrate W. In addition, the processing liquid scattered from the substrate W may splash back from the first shield 71A and adhere to the lower surface of the substrate W. In this case, as shown in FIG. 5C, since the heat medium is supplied to the lower surface of the substrate W in the heating process (step S7), the flow of the heat medium can be eliminated from the lower surface of the substrate W liquid.

Furthermore, the processing liquid adhering to the lower surface of the substrate W may be solidified or hardened by the processing liquid supply step (step S5) to form a solid. In this case, as shown in FIG. 5E, by supplying the peeling liquid to the upper surface of the substrate W in the removal step (step S9), the lower peeling liquid valve 87 is opened to flow from the lower surface nozzle 12 toward the upper surface. The peeling liquid is supplied (discharged) from the lower surface of the substrate W, and the solid can be peeled from the lower surface of the substrate W (lower peeling liquid supply step, lower peeling liquid discharge step).

Furthermore, as shown in FIG. 5D, as long as the buffer solution is supplied to the upper surface of the substrate W in the buffering step (step S8 ), the lower flushing liquid valve 86 is opened from the lower surface nozzle 12 to the lower surface of the substrate W By supplying (discharging) the rinsing liquid as a buffer, the effect of the peeling liquid supplied to the lower surface of the substrate W can be buffered (lower buffer supply step, lower buffer discharge step).

Next, the second rinse step (step S10) is executed. Specifically, the upper peeling liquid valve 52 and the lower peeling liquid valve 87 are closed. With this, the supply of the peeling liquid to the upper and lower surfaces of the substrate W is stopped. Then, the third nozzle moving unit 38 moves the third moving nozzle 10 to the starting position.

Then, as shown in FIG. 5F, the opposing member elevating unit 61 moves the opposing member 6 to the processing position. In the second rinsing step, the substrate W is rotated at a specific second rinsing rotation speed, for example, 800 rpm. The first shield 71A and the second shield 71B are maintained at the upper position.

Then, the upper flushing fluid valve 54 is opened. Thereby, the rinse liquid is supplied (discharged) from the central nozzle 11 to the central region of the upper surface of the substrate W in the rotating state (second upper rinse liquid supply step, second upper rinse liquid discharge step). The rinse liquid supplied to the upper surface of the substrate W is spread radially by centrifugal force and spreads over the entire upper surface of the substrate W. By this, the peeling liquid adhering to the upper surface of the substrate W is washed away by the rinse liquid.

Then, the lower flush valve 86 is opened. Thereby, the rinse liquid is supplied (discharged) from the lower surface nozzle 12 to the central region of the lower surface of the substrate W in the rotating state (second lower rinse liquid supply step, second lower rinse liquid discharge step). By this, the peeling liquid adhering to the lower surface of the substrate W is washed away by the rinse liquid. The supply of the rinse liquid to the upper and lower surfaces of the substrate W lasts for a specific time, for example, 35 seconds.

Next, the second organic solvent supply step (step S11) is performed. Specifically, the shield lifting unit 74 moves the first shield 71A to the lower position. In addition, the opposing member 6 is maintained at the processing position. In the second organic solvent supply step, the substrate W is rotated at a specific second organic solvent rotation speed, for example, 300 rpm.

Then, the upper side flushing liquid valve 54 and the lower side flushing liquid valve 86 are closed. As a result, the supply of the rinse liquid to the upper and lower surfaces of the substrate W is stopped. Then, as shown in FIG. 5G, the organic solvent valve 56 is opened. With this, the organic solvent is supplied (discharged) from the central nozzle 11 to the central region of the upper surface of the substrate W in the rotating state (second organic solvent supply step, second organic solvent discharge step, residue removal liquid supply step). The supply of the organic solvent to the upper surface of the substrate W lasts for a specific time, for example, 30 seconds.

The organic solvent supplied to the upper surface of the substrate W expands radially by centrifugal force and spreads over the entire upper surface of the substrate W. Thereby, the rinse liquid on the upper surface of the substrate W is replaced with an organic solvent. The organic solvent supplied to the upper surface of the substrate W dissolves the residue of the treatment film 100 remaining on the upper surface of the substrate W, and then is discharged from the periphery of the upper surface of the substrate W (residue removal step).

Next, a spin drying process is performed (step S12). Specifically, referring to FIG. 5H, the organic solvent valve 56 is closed. With this, the supply of the organic solvent to the upper surface of the substrate W is stopped. Then, the counter member lifting unit 61 moves the counter member 6 to a drying position closer to the lower side than the processing position. When the opposing member 6 is in the dry position, the distance between the opposing surface 6a of the opposing member 6 and the upper surface of the substrate W is, for example, 1.5 mm.

Then, the rotation motor 23 accelerates the rotation of the substrate W, and rotates the substrate W at a high speed. In the spin drying process, the substrate W is rotated at a drying speed, for example, 1500 rpm. The spin drying process is performed for a specific time, for example, 30 seconds. Thereby, a large centrifugal force acts on the organic solvent on the substrate W, and the organic solvent on the substrate W is thrown around the substrate W.

Then, the rotation motor 23 stops the rotation of the substrate W. The shield lifting unit 74 moves the first shield 71A and the second shield 71B to the lower position. Close the gas valve 55. The opposing member lifting unit 61 moves the opposing member 6 to the upper position.

The transfer robot CR enters the processing unit 2, picks up the processed substrate W from the chuck pin 20 of the rotary chuck 5, and carries it out of the processing unit 2 (step S13 ). The substrate W is transferred from the transfer robot CR to the transfer robot IR, and is stored in the carrier C by the transfer robot IR.

Next, the state when the processing film 100 is peeled from the substrate W will be described with reference to FIGS. 6A to 6D. FIG. 6A shows the state near the upper surface of the substrate W after the thinning process (step S6). FIG. 6B shows the state near the upper surface of the substrate W after the heating process (step S7). 6C and 6D show the vicinity of the upper surface of the substrate W during the removal process (step S9).

Since the processing liquid film 101 is formed on the upper surface of the substrate W in the processing liquid supply step (step S5), the processing liquid is brought into contact with the object to be removed 103 existing on the upper surface of the substrate W. Therefore, as shown in FIG. 6A, even after the processing liquid film 101 is thinned by the thinning process (step S6 ), the processing liquid remains in contact with the object to be removed 103.

In the heating step (step S7), the processing liquid film 101 on the substrate W is heated to be cured or hardened in a state where the processing liquid is in contact with the object to be removed 103. With this, as shown in FIG. 6B, the processing film 100 holding the removal object 103 is formed. In detail, at least a part of the solvent evaporates, whereby the first component contained in the solute of the processing liquid forms the first solid 110, and the second component contained in the solute of the processing liquid forms the second solid 111.

By forming the treatment film 100 holding the removal object 103, the apparent size of the removal object 103 is enlarged to the thickness D of the treatment film 100 in the thickness direction T (removal object amplification step). The apparent size of the removal object 103 refers to the size of the removal object 103 and the entire treatment film 100 in the thickness direction T when the removal object 103 is integrated with other solids (treatment film 100).

Then, referring to FIG. 6C, the treatment film 100 is partially dissolved in the removal step. When the peeling liquid is supplied to the upper surface of the substrate W, the first solid 110 formed by the first component having a higher solubility in the peeling liquid than the second component is mainly dissolved. With this, the through-hole 102 is formed in the portion where the first solid 110 is concentrated in the processing film 100 (through-hole formation step).

The through hole 102 is particularly easy to form in the portion where the first solid 110 extends in the thickness direction T of the substrate W (also in the thickness direction of the processing film 100 ). The through hole 102 has a diameter of several nm in plan view, for example.

The second solid 111 is also dissolved by the stripping liquid. However, since the solubility of the second component in the stripping liquid is lower than the solubility of the first component, only the vicinity of the surface of the second solid 111 is slightly dissolved by the stripping liquid. Therefore, the peeling liquid that reaches the vicinity of the upper surface of the substrate W through the through hole 102 slightly dissolves the portion near the upper surface of the substrate W in the second solid 111. As a result, as shown in the enlarged view of FIG. 6C, the peeling liquid slowly dissolves the second solid 111 near the upper surface of the substrate W, and enters the gap G1 between the processing film 100 and the upper surface of the substrate W (stripping Liquid into the process).

Then, for example, using the periphery of the through-hole 102 as a starting point, the processing film 100 is split into a film. As shown in FIG. 6D, the film of the processing film 100 is peeled off from the substrate W while holding the object to be removed 103 (processing film Splitting process, peeling process).

Then, the processing film 100 is washed away by the peeling liquid and discharged to the outside of the substrate W, thereby removing the object to be removed 103 from the upper surface of the substrate W together with the processing film 100. That is, while maintaining the state in which the apparent size of the removal object 103 is enlarged, the removal object 103 is removed from the upper surface of the substrate W (removal step).

Next, the energy received by the removal object 103 from the peeling liquid flowing on the upper surface of the substrate W will be described. The flow rate of the stripping liquid flowing through the upper surface of the substrate W is affected by the viscosity of the stripping liquid. Therefore, the flow velocity of the peeling liquid in the direction along the upper surface of the substrate W becomes smaller near the upper surface of the substrate W than the position sufficiently separated from the upper surface of the substrate W.

In the flow of the stripping liquid, the layer strongly affected by the viscosity of the stripping liquid is called the boundary layer BL. The size of the boundary layer BL in the thickness direction T of the substrate W (orthogonal direction with respect to the direction in which the peeling liquid flows) is called the boundary layer thickness δ.

7 is a schematic diagram for comparing the thickness δ of the boundary layer in the flow of the stripping liquid along the upper surface of the substrate W and the size of the object 103 to be removed. 8 is a graph showing the relationship between the flow velocity of the stripping liquid flowing along the upper surface of the substrate W and the thickness δ of the boundary layer. In FIG. 8, the horizontal axis represents the flow velocity V of the stripping solution, and the vertical axis represents the thickness δ of the boundary layer.

When the flow velocity of the stripping liquid at the outer side of the boundary layer BL is set to V, the thickness δ of the boundary layer at the flow velocity V is expressed by the following formula (1). α is the coefficient. v represents the dynamic viscosity of the stripping fluid. x is the distance between the origin when any position on the upper surface of the substrate W is taken as the origin and the position separated from the origin along the direction in which the peeling liquid flows.

[Formula 1]

As shown by the solid line in FIG. 7, when the size d1 of the object to be removed 103 in the thickness direction T of the substrate W (the diameter when the object to be removed 103 is a sphere) is below the boundary layer thickness δ, The object to be removed 103 attached to the upper surface of the substrate W receives energy from the peeling liquid flow having a flow velocity less than the flow velocity V.

On the other hand, as indicated by a two-dot chain line in FIG. 7, when the size d2 of the object to be removed 103 in the thickness direction T of the substrate W is greater than the thickness δ of the boundary layer, the removal attached to the upper surface of the substrate W The object 103 receives energy not only from the stripping liquid flow at a flow rate less than the flow rate V, but also from the stripping liquid flow at the flow rate V. That is, when the size d2 of the removal object 103 in the thickness direction T of the substrate W is greater than the boundary layer thickness δ, the removal object 103 attached to the upper surface of the substrate W is likely to be removed from the upper surface of the substrate W Peelable and can receive sufficient energy from the stripping solution.

However, as shown in FIG. 8, the size d1 of the general removal object 103 existing on the upper surface of the substrate W is less than 50 nm. In addition, when the flow velocity V of the stripping liquid flowing along the upper surface of the substrate W is greater than 0 m/s and less than 100 m/s (0 m/s<V<100 m/s), the thickness δ of the boundary layer is greater than 50 nm. The flow velocity V of the stripping liquid flowing through the upper surface of the substrate W is generally greater than 0 m/s and less than 100 m/s.

Therefore, the size d1 of the general removal object 103 existing on the upper surface of the substrate W has nothing to do with the flow velocity V of the stripping solution, and is much smaller than the thickness δ of the boundary layer. In this way, there is a possibility that the object to be removed 103 existing on the upper surface of the substrate W cannot receive sufficient energy from the peeling liquid flowing along the upper surface of the substrate W.

Therefore, according to the present embodiment, the treatment film 100 is formed by curing or hardening the treatment liquid in contact with the removal object 103 to enlarge the apparent size of the removal object 103. By forming the processing film 100, the apparent size of the removal object 103 in the thickness direction T of the substrate W becomes the thickness D of the processing film 100, and therefore is larger than the original size removal object 103. Therefore, the removal object 103 whose apparent size is enlarged reaches a position farther from the upper surface of the substrate W than the removal object 103 of the original size.

Therefore, the energy received by the removal object 103 from the peeling liquid flowing along the upper surface of the substrate W can be increased. Therefore, it is easy to peel off the object to be removed 103 held in the processing film 100 from the substrate W.

Then, the object to be removed 103 is peeled from the substrate W in a state where the apparent size is enlarged, and is removed from the upper surface of the substrate W together with the peeling liquid. Therefore, after the object to be removed 103 is peeled off from the upper surface of the substrate W, the state where the energy received by the object to be removed 103 from the peeling liquid flowing through the upper surface of the substrate W is increased can also be maintained.

As a result, the object to be removed 103 existing on the upper surface of the substrate W can be efficiently removed.

In addition, the processing film 100 peeled off from the upper surface of the substrate W and the object to be removed 103 float together from the upper surface of the substrate W, so that it is further separated from the upper surface of the substrate W in the peeling liquid. Therefore, the processed film 100 peeled from the upper surface of the substrate W is highly likely to receive energy from the peeling liquid with a higher flow rate. Therefore, the processing film 100 peeled from the upper surface of the substrate W is easily washed out of the substrate W by the peeling liquid.

Also, as described above, at a position farther from the upper surface of the substrate W in the thickness direction T of the substrate W than the thickness δ of the boundary layer, substantially no occurrence along the substrate W due to the viscosity of the peeling liquid The velocity of the stripping fluid flowing on the upper surface is reduced. As shown in FIG. 6B, as long as the apparent size of the removal object 103 (thickness D of the processing film 100) after the heating process (step S7) is greater than the boundary thickness δ (D>δ), the removal object 103 can flow through itself The energy received by the peeling liquid on the upper surface of the substrate W is sufficiently increased. Therefore, the object to be removed 103 can be easily peeled off from the substrate W, and can be quickly discharged to the outside of the substrate W together with the peeling liquid.

In addition, according to this embodiment, the through-hole 102 is formed in the processing film 100 by partially dissolving the processing film 100 with the peeling liquid. Therefore, the peeling liquid easily reaches the vicinity of the upper surface of the substrate W. Therefore, the peeling liquid can act on the interface between the processing film 100 and the substrate W to efficiently peel off the processing film 100 from the substrate W. On the other hand, the portion (the second solid 111) other than the portion where the through-hole 102 is formed in the processing film 100 is not dissolved by the peeling liquid and maintains the solid state, so the apparent size of the object to be removed 103 can also be maintained in the peeling liquid The state of being enlarged. Therefore, the object to be removed 103 can be efficiently peeled off the upper surface of the substrate W, and the energy received by the object to be removed 103 from the flow of the peeling liquid can be sufficiently increased.

Furthermore, according to this embodiment, the peeling liquid enters between the processing film 100 and the upper surface of the substrate W through the through-hole 102. Therefore, the peeling liquid can act on the interface between the processing film 100 and the substrate W to further efficiently peel off the processing film 100 from the upper surface of the substrate W.

Furthermore, according to this embodiment, the solubility of the first component in the stripping liquid is higher than that of the second component. Therefore, the first solid 110 formed by the first component is more easily dissolved in the peeling liquid than the second solid 111 formed by the second component. Therefore, by supplying the peeling liquid to the upper surface of the substrate W, the peeling liquid mainly dissolves the first solid 110 and reaches the vicinity of the upper surface of the substrate W. Therefore, for the stripping liquid, the stripping liquid can act on the interface between the processing film 100 and the substrate W. On the other hand, most of the second solid 111 is not dissolved by the peeling liquid and maintains a solid state. Therefore, the state in which the object to be removed 103 is held in the second solid 111, that is, the state in which the apparent size of the object to be removed 103 is enlarged can be maintained.

As a result, the object to be removed 103 can be efficiently peeled from the upper surface of the substrate W, and the energy received by the object to be removed 103 from the peeling liquid flowing through the upper surface of the substrate W can be sufficiently increased.

Furthermore, in this embodiment, the content of the second component in the processing liquid is greater than the content of the first component in the processing liquid. Therefore, compared with the configuration in which the content of the second component in the processing liquid is less than the content of the first component in the processing liquid, the portion of the processing film 100 that is dissolved by the peeling liquid can be reduced. Therefore, it is possible to reduce the number of objects to be removed 103 that are separated from the processing film 100 due to the local dissolution of the processing film 100. As a result, most of the removal object 103 can be removed from the upper surface of the substrate W together with the processing film 100, so that re-attachment to the substrate W can be suppressed, and the removal object 103 can be efficiently excluded from the substrate W external.

Furthermore, compared with the configuration in which the content of the second component in the processing liquid is less than the content of the first component in the processing liquid, the processing film 100 is less dissolved by the stripping liquid, so the processing film 100 can be split into relatively Larger diaphragm. Since the treatment membrane 100 is split into a relatively large membrane, the surface area of the membrane subjected to force from the flow of the stripping liquid can be increased. Therefore, it is easy to be discharged to the outside of the substrate W as the peeling liquid flows. Therefore, the object to be removed 103 can be efficiently removed from the substrate W together with the processing film 100.

The present invention is not limited to the embodiments described above, and can be implemented in other forms.

For example, in the substrate processing apparatus 1, the substrate processing may be performed without the chemical solution supplying step (step S2), the first rinsing step (step S3), and the first organic solvent supplying step (step S4).

In addition, in the substrate processing in the above embodiment, in the processing film forming step (steps S6 and S7), the heating of the substrate W by the heat medium evaporates the solvent of the processing liquid. However, the substrate W is not limited to the supply of the heat medium, and may be heated by a heater (not shown) built in the rotating base 21 or the counter member 6, for example. In this case, the heater functions as a substrate heating unit and an evaporation unit (evaporation promotion unit).

In addition, during the formation of the processing film 100, it is not necessary to heat the substrate W. That is, when the solvent has sufficiently volatilized (evaporated) in the thin film forming step (step S6), the subsequent heating step (step S7) may not be performed. In particular, when the solvent may remain inside the processing film 100, even if the substrate W is not heated, the solvent is easily evaporated to a desired degree.

In addition, in the above substrate processing, the buffer step (step S8) may be omitted.

Furthermore, in the above embodiments, the content of the second component in the treatment liquid is greater than the content of the first component in the treatment liquid. However, the content of the second component in the treatment liquid may also be less than the content of the first component in the treatment liquid.

In this case, as compared with a configuration in which the content of the second component in the processing liquid is greater than the content of the first component in the processing liquid, the portion of the processing film 100 that is dissolved by the peeling liquid can be increased. Therefore, the processing film 100 can be split into relatively thin films. Since the processing film 100 is split into a relatively thin film, the film is easily forced to float from the flow of the stripping liquid, and is easily discharged to the outside of the substrate W with the flow of the stripping liquid. Therefore, the processing film 100 can be efficiently removed from the substrate W.

In the above-mentioned embodiment, each component (first component and second component) of the solute contained in the treatment liquid is a synthetic resin. However, each component of the solute need not necessarily be a synthetic resin, as long as it is dissolved in the solvent contained in the liquid to be treated and the solubility of the first component in the stripping liquid is higher than that of the second component. If so, each component of the solute may be a metal or a salt, for example.

Moreover, in the above-mentioned embodiment, the solute contained in the treatment liquid contains the first component and the second component. However, the solute may be constituted to include a single component, or may include three or more components having different solubility to the peeling liquid.

The embodiments of the present invention have been described in detail, but these are only specific examples used to clarify the technical content of the present invention. The present invention should not be limited to these specific examples and explained, and the scope of the present invention is only provided by the accompanying The scope of the patent application is limited.

This application corresponds to Japanese Patent Application No. 2018-105631 filed by the Japan Patent Office on May 31, 2018, and all disclosures of this application are incorporated herein by reference.

1: substrate processing device 2: Processing unit 3: controller 3A: processor 3B: Memory 4: chamber 5: Rotating chuck 6: Counter member 6a: Opposite 6b: connecting hole 7: Handle bearing cup 8: No. 1 moving nozzle 9: 2nd moving nozzle 10: 3rd moving nozzle 11: Central nozzle 11a: spout 12: Lower surface nozzle 12a: spout 20: Chuck pin 21: Rotating base 21a: through hole 22: Rotating axis 23: Rotating motor 30: Shell 31: 1st tube 32: 2nd tube 33: 3rd tube 36: No. 1 nozzle moving unit 37: 2nd nozzle moving unit 38: 3rd nozzle moving unit 40: Liquid medicine piping 41: Process liquid piping 42: Upper side stripping liquid piping 43: Upper buffer piping 44: Upper flushing fluid piping 45: Gas piping 46: Organic solvent piping 50: Liquid medicine valve 51: Treatment fluid valve 52: upper side stripping valve 53: upper buffer valve 54: Upper flushing valve 55: gas valve 56: Organic solvent valve 60: hollow shaft 60a: interior space 61: Counter member lifting unit 71: Protective body 71A: The first shield 71B: The second shield 72: bearing cup 72A: 1st cup 72B: 2nd cup 73: outer wall member 74: Protective body lifting unit 80: Common piping 81: Lower flushing fluid piping 82: Lower side peeling liquid piping 83: Heat medium piping 86: Lower flush valve 87: Lower stripping valve 88: Heat medium valve 100: processing membrane 101: Processing liquid film 102: through hole 103: Remove the object 110: 1st solid 111: 2nd solid A1: axis of rotation BL: junction layer C: carrier CR: transport robot d1: size d2: size D: thickness DIW: high temperature F: Airflow G1: clearance IR: transport robot LP: load port S1: Step S2: Step S3: Step S4: Step S5: Step S6: Step S7: Step S8: Step S9: Step S10: Step S11: Step S12: Step S13: Step T: direction V: flow rate W: substrate δ: thickness of the interface layer

FIG. 1 is a schematic plan view showing the layout of a substrate processing apparatus according to an embodiment of the present invention. 2 is a schematic partial cross-sectional view showing a schematic configuration of a processing unit included in the substrate processing apparatus. 3 is a block diagram showing the electrical configuration of the main part of the substrate processing apparatus. FIG. 4 is a flowchart for explaining an example of substrate processing by the above substrate processing apparatus. FIG. 5A is a schematic diagram for explaining the state of the processing liquid supply step (step S5) of the above substrate processing. FIG. 5B is a schematic diagram for explaining the state of the thinning process (step S6) of the above substrate processing. FIG. 5C is a schematic diagram for explaining the state of the heating process (step S7) of the above substrate processing. FIG. 5D is a schematic diagram for explaining the state of the buffering process (step S8) of the above substrate processing. FIG. 5E is a schematic diagram for explaining the state of the removal process (step S9) of the above substrate processing. FIG. 5F is a schematic diagram for explaining the state of the second rinsing step (step S10) of the above substrate processing. FIG. 5G is a schematic diagram for explaining the state of the second organic solvent supply step (step S11) of the above substrate processing. FIG. 5H is a schematic diagram for explaining the state of the spin-drying step (step S12) of the above substrate processing. FIG. 6A is a schematic cross-sectional view for explaining the situation near the surface of the substrate after the thinning process (step S6). FIG. 6B is a schematic cross-sectional view for explaining the situation near the surface of the substrate after the heating step (step S7). FIG. 6C is a schematic cross-sectional view for explaining the situation near the surface of the substrate during the removal step (step S9). FIG. 6D is a schematic cross-sectional view for explaining the vicinity of the substrate surface during the removal step (step S9). 7 is a schematic diagram for comparing the thickness of the boundary layer in the flow of the stripping liquid along the surface of the substrate and the size of the object to be removed. 8 is a graph showing the relationship between the flow velocity of the stripping liquid flowing along the surface of the substrate and the thickness of the boundary layer.

100: processing membrane

102: through hole

103: Remove the object

110: 1st solid

111: 2nd solid

T: direction

W: substrate

Claims (18)

A substrate processing method, comprising: a processing liquid supply step, which supplies a processing liquid to a surface of a substrate; The removal object enlargement step is to enlarge the apparent size of the removal object by solidifying or hardening the treatment liquid supplied to the surface of the substrate in contact with the removal object present on the surface of the substrate; and In the removing step, a stripping liquid is supplied to the surface of the substrate, and the object to be removed whose apparent size is enlarged is peeled from the surface of the substrate, and the surface is removed while maintaining the state where the apparent size of the object to be removed is enlarged. The object is removed from the substrate surface. The substrate processing method according to claim 1, wherein the removal object enlargement step includes that the apparent size of the removal object becomes larger than the boundary in the flow of the peeling liquid along the surface of the substrate in the thickness direction of the substrate The method of enlarging the apparent size of the object to be removed as described above for the layer thickness. The substrate processing method according to claim 1 or 2, wherein the amplifying step of the removal object includes curing or hardening the treatment liquid supplied to the surface of the substrate to form a treatment film on the surface of the substrate to hold the treatment film of the removal object Process, and The removing step includes a step of peeling the object to be removed from the surface of the substrate together with the processing film. The substrate processing method according to claim 3, wherein the removing step includes a through-hole forming step in which the processing film is partially dissolved by the peeling liquid and a through-hole is formed in the processing film. The substrate processing method according to claim 4, wherein the removing step further includes a peeling liquid entering step for allowing the peeling liquid to enter between the processing film and the substrate surface through the through hole. The substrate processing method according to claim 3, wherein the processing liquid has: a solute having a first component and a second component having lower solubility in the stripping liquid than the first component; and a solvent which dissolves the above Solute; and The treatment film forming step includes a step of forming the treatment film having a first solid formed by the first component and a second solid formed by the second component. The substrate processing method according to claim 6, wherein the content of the second component in the processing liquid is greater than the content of the first component in the processing liquid. The substrate processing method according to claim 6, wherein the content of the second component in the processing liquid is less than the content of the first component in the processing liquid. The substrate processing method according to claim 6, wherein the first component and the second component are synthetic resins. A substrate processing apparatus includes: a processing liquid supply unit that supplies a processing liquid to a surface of a substrate; A solid forming unit that solidifies or hardens the above-mentioned processing liquid; A peeling liquid supply unit which supplies the peeling liquid to the surface of the substrate; and A controller that controls the processing liquid supply unit, the solid formation unit, and the peeling liquid supply unit; and The controller is programmed to execute: a processing liquid supply process that supplies the processing liquid from the processing liquid supply unit to the surface of the substrate; and a removal object amplification process that supplies the solid formation unit to the substrate The treatment liquid on the surface is solidified or hardened to enlarge the apparent size of the object to be removed present on the surface of the substrate; and a removal step of supplying a peeling liquid to the surface of the substrate to remove the enlarged size The object is peeled from the surface of the substrate, and the object to be removed is removed from the surface of the substrate while maintaining the state in which the apparent size of the object to be removed is enlarged. The substrate processing apparatus of claim 10, wherein the controller is programmed to: in the removal object enlargement step, the apparent size of the removal object becomes larger in the thickness direction of the substrate than along the surface of the substrate The thickness of the boundary layer in the flow of the stripping solution enlarges the apparent size of the object to be removed. The substrate processing apparatus according to claim 10 or 11, wherein the controller is programmed to perform curing or hardening of the processing liquid supplied to the surface of the substrate in the amplifying process of the object to be removed to form and maintain the surface of the substrate A treatment film forming step of the treatment film for removing the object, and in the removal step, the removal object is peeled off the substrate surface together with the treatment film. The substrate processing apparatus according to claim 12, wherein the controller is programmed to perform a through-hole forming process in which the peeling liquid partially dissolves the processing film and forms a through-hole in the processing film in the removing step. The substrate processing apparatus of claim 13, wherein the controller is programmed to allow the peeling liquid to enter between the processing film and the substrate surface through the through hole in the removal step. The substrate processing apparatus according to claim 12, wherein the processing liquid has: a solute having a first component and a second component having lower solubility in the stripping liquid than the first component; and a solvent which dissolves the above Solute; and The controller is programmed to form the processing film including the first solid formed by the first component and the second solid formed by the second component in the processing film forming step. The substrate processing apparatus according to claim 15, wherein the content of the second component in the processing liquid is greater than the content of the first component in the processing liquid. The substrate processing apparatus according to claim 15, wherein the content of the second component in the processing liquid is less than the content of the first component in the processing liquid. The substrate processing apparatus according to claim 15, wherein the first component and the second component are synthetic resins.

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