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TW202018800A - Processing cup unit and substrate processing apparatus - Google Patents

Processing cup unit and substrate processing apparatus Download PDF

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TW202018800A
TW202018800A TW108136815A TW108136815A TW202018800A TW 202018800 A TW202018800 A TW 202018800A TW 108136815 A TW108136815 A TW 108136815A TW 108136815 A TW108136815 A TW 108136815A TW 202018800 A TW202018800 A TW 202018800A
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substrate
processing
cup
processing liquid
liquid
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TW108136815A
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TWI747060B (en
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杉山念
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日商斯庫林集團股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05CAPPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/02Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
    • B05C11/08Spreading liquid or other fluent material by manipulating the work, e.g. tilting
    • H10P52/00
    • H10P76/00

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  • Cleaning Or Drying Semiconductors (AREA)
  • Coating Apparatus (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

This processing cup unit is disposed so as to surround a substrate being held in a horizontal position when the substrate is subjected to a process using a processing liquid. The processing cup unit is provided with a lower cup, an upper cup, and a mist attachment-preventing member. The upper cup is disposed so as to surround the substrate. The lower cup is located under the upper cup. The mist attachment-preventing member is disposed under the substrate. The mist attachment-preventing member prevents a mist of the processing liquid from attaching to the underside of the substrate.

Description

處理杯單元及基板處理裝置Processing cup unit and substrate processing device

本發明係關於一種處理杯單元及具備其之基板處理裝置。The invention relates to a processing cup unit and a substrate processing device provided with the processing cup unit.

為了對半導體晶圓、液晶顯示裝置用玻璃基板、光罩用玻璃基板或光碟用玻璃基板等之基板進行使用顯影液、洗淨液、沖洗液或光阻劑液等處理液之處理而使用基板處理裝置。例如,於專利文獻1記載之基板處理裝置中,在基板藉由旋轉保持部水平地支持且被旋轉之狀態下,處理液朝基板之被處理面之中央部噴出。被處理面之中央部之處理液藉由伴隨著基板之旋轉之離心力而擴展至被處理面之整體。藉此,將處理液供給至基板之被處理面之整體。A substrate is used for processing a semiconductor wafer, a glass substrate for a liquid crystal display device, a glass substrate for a reticle, or a glass substrate for an optical disc using a processing solution such as a developer, cleaning solution, rinse solution, or photoresist solution Processing device. For example, in the substrate processing apparatus described in Patent Document 1, in a state where the substrate is horizontally supported by the rotation holding portion and rotated, the processing liquid is ejected toward the central portion of the processed surface of the substrate. The processing liquid in the central part of the surface to be processed is spread to the entire surface to be processed by the centrifugal force accompanying the rotation of the substrate. By this, the processing liquid is supplied to the entire processed surface of the substrate.

[專利文獻1]日本特開2014-49679號公報[Patent Document 1] Japanese Patent Application Publication No. 2014-49679

[發明所欲解決之問題] 在如專利文獻1之旋轉式基板處理裝置中,被處理面之處理液之一部分因離心力而飛散。該情形下,處理液附著於與被處理面為相反側之下表面,而污染基板之下表面。因此,於專利文獻1之基板處理裝置中,設置有對基板之下表面供給洗淨液之處理液噴嘴,而去除附著於下表面之處理液。然而,存在難以充分地去除附著於基板之下表面之處理液之情形,特別是,在處理液之黏度高時,需要將多量之洗淨液供給至基板之下表面。[Problems to be solved by the invention] In the rotary substrate processing apparatus as in Patent Document 1, part of the processing liquid on the surface to be processed is scattered due to centrifugal force. In this case, the processing liquid adheres to the lower surface on the opposite side to the surface to be processed, and contaminates the lower surface of the substrate. Therefore, in the substrate processing apparatus of Patent Document 1, a processing liquid nozzle for supplying a cleaning liquid to the lower surface of the substrate is provided to remove the processing liquid adhering to the lower surface. However, there is a case where it is difficult to sufficiently remove the processing liquid adhering to the lower surface of the substrate. In particular, when the viscosity of the processing liquid is high, a large amount of cleaning liquid needs to be supplied to the lower surface of the substrate.

本發明之目的在於提供一種能夠防止因處理液所致之基板之下表面之污染之處理杯單元及基板處理裝置。An object of the present invention is to provide a processing cup unit and a substrate processing apparatus that can prevent contamination of the lower surface of a substrate due to a processing liquid.

[解決問題之技術手段] (1)本發明之一態樣之處理杯單元係設置為當對被保持為水平姿勢之基板進行使用處理液之處理時包圍基板之周圍者,其具備:下杯;上杯,其在下杯之上方以包圍基板之周圍之方式配置;及防霧氣附著構件,其配置於基板之下方且防止處理液之霧氣附著於基板之下表面。 在該處理杯單元中,在對被保持為水平姿勢之基板進行使用處理液之處理時,設置有下杯及上杯。上杯在下杯之上方以包圍基板之周圍之方式配置。防霧氣附著構件配置於基板之下方。 根據該構成,由於在基板處理時,自基板之被處理面飛散之處理液被下杯及上杯捕捉,故防止因處理液之飛散所致之處理杯單元之外部之污染。此處,即便在自基板飛散之處理液與下杯或上杯衝撞而產生處理液之霧氣之情形下,亦藉由防霧氣附著構件防止處理液之霧氣附著於基板之下表面。藉此,可防止因處理液所致之基板之下表面之污染。又,由於處理液不附著於基板之下表面,故無須將用於洗淨基板之下表面之洗淨液供給至基板之下表面。因此,可削減基板處理之洗淨液之使用量。[Technical means to solve the problem] (1) The processing cup unit of one aspect of the present invention is provided to surround the substrate when the substrate held in a horizontal posture is treated with a processing liquid, and it includes: a lower cup; an upper cup, which is in the lower cup The upper part is arranged to surround the periphery of the substrate; and the anti-fog adhesion member is arranged below the substrate and prevents the mist of the processing liquid from adhering to the lower surface of the substrate. In this processing cup unit, a lower cup and an upper cup are provided when performing processing using a processing liquid on a substrate held in a horizontal posture. The upper cup is arranged above the lower cup so as to surround the periphery of the substrate. The anti-fog adhesion member is arranged below the substrate. According to this configuration, since the processing liquid scattered from the processed surface of the substrate is captured by the lower cup and the upper cup during substrate processing, contamination of the outside of the processing cup unit due to the scattering of the processing liquid is prevented. Here, even in the case where the processing liquid scattered from the substrate collides with the lower cup or the upper cup to generate mist of the processing liquid, the anti-fog adhesion member prevents the mist of the processing liquid from adhering to the lower surface of the substrate. Thereby, the contamination of the lower surface of the substrate due to the processing liquid can be prevented. In addition, since the processing liquid does not adhere to the lower surface of the substrate, there is no need to supply the cleaning liquid for cleaning the lower surface of the substrate to the lower surface of the substrate. Therefore, the amount of cleaning solution used for substrate processing can be reduced.

(2)防霧氣附著構件可以沿著基板之下表面延伸且與基板之下表面接近之方式配置。該情形下,防霧氣附著構件與基板之下表面之間之空間狹窄地形成。因此,可更容易地防止基板之被處理面之處理液迂迴至下表面。藉此,可更確實地防止因處理液所致之基板之下表面之污染。(2) The anti-fog adhesion member may be arranged along the lower surface of the substrate and close to the lower surface of the substrate. In this case, the space between the anti-fog adhesion member and the lower surface of the substrate is narrowly formed. Therefore, it is easier to prevent the processing liquid on the processed surface of the substrate from bypassing to the lower surface. In this way, the contamination of the lower surface of the substrate due to the processing liquid can be more reliably prevented.

(3)上下方向之防霧氣附著構件與基板之下表面之間隔可為2 mm以上5 mm以下。該情形下,藉由防霧氣附著構件與基板之下表面之間充分地接近,而防霧氣附著構件與基板之下表面之間之空間更狹窄地形成。藉此,可更確實地防止基板之被處理面之處理液迂迴至下表面。(3) The distance between the vertical anti-fog adhesion member and the lower surface of the substrate can be 2 mm or more and 5 mm or less. In this case, the space between the anti-fog adhesion member and the lower surface of the substrate is more narrowly formed by sufficiently approaching the anti-fog adhesion member and the lower surface of the substrate. With this, it is possible to more reliably prevent the processing liquid on the processed surface of the substrate from bypassing to the lower surface.

(4)上下方向之防霧氣附著構件與基板之下表面之間隔可自內方朝向外方逐漸減小。該情形下,由於防霧氣附著構件與基板之下表面之間隔在外方側變得更狹窄,故可進一步確實地防止基板之被處理面之處理液迂迴至下表面。(4) The distance between the vertical anti-fog adhesion member and the lower surface of the substrate can be gradually reduced from the inner side to the outer side. In this case, since the distance between the anti-fog adhesion member and the lower surface of the substrate becomes narrower on the outer side, it is possible to further reliably prevent the treatment liquid of the processed surface of the substrate from detouring to the lower surface.

(5)防霧氣附著構件之外緣部可位於較基板之外緣部更靠近內方。該情形下亦然,可進一步確實地防止基板之被處理面之處理液迂迴至下表面。(5) The outer edge of the anti-fog adhesion member may be located closer to the inner side than the outer edge of the substrate. In this case as well, it is possible to further surely prevent the processing liquid on the processed surface of the substrate from bypassing to the lower surface.

(6)處理杯單元可更具備形成沿著基板之下表面自內方朝外方之氣體之流動之氣體噴嘴。該情形下,可將防霧氣附著構件與基板之下表面之間之空間維持為正壓。藉此,可進一步確實地防止處理液之霧氣附著於基板之下表面,以及基板之被處理面之處理液迂迴至下表面。(6) The processing cup unit may be further provided with a gas nozzle forming a flow of gas from the inside to the outside along the lower surface of the substrate. In this case, the space between the anti-fog adhesion member and the lower surface of the substrate can be maintained at a positive pressure. This can further reliably prevent the mist of the processing liquid from adhering to the lower surface of the substrate and the processing liquid of the processed surface of the substrate to bypass the lower surface.

(7)下杯之內緣部可位於較上杯之內緣部更靠近內方。該情形下,下杯之內緣部充分地接近基板。因此,在處理液之飛散距離為短之情形下,仍可藉由下杯捕集處理液。又,即便當在基板之附近處理液與下杯衝撞而產生處理液之霧氣之情形下,亦藉由防霧氣附著構件防止處理液之霧氣附著於基板之下表面。藉此,可防止因處理液所致之基板之下表面之污染。(7) The inner edge of the lower cup can be located closer to the inner edge than the inner edge of the upper cup. In this case, the inner edge of the lower cup is sufficiently close to the substrate. Therefore, when the flying distance of the processing liquid is short, the processing liquid can still be collected by the lower cup. Furthermore, even when the processing liquid collides with the lower cup near the substrate to generate mist of the processing liquid, the anti-fog adhesion member prevents the mist of the processing liquid from adhering to the lower surface of the substrate. Thereby, the contamination of the lower surface of the substrate due to the processing liquid can be prevented.

(8)下杯之內緣部可位於防霧氣附著構件之外緣部之下方。該情形下,下杯之內緣部充分地接近基板。因此,在處理液之飛散距離為短之情形下,仍可藉由下杯捕集處理液。又,即便當在基板之附近處理液與下杯衝撞而產生處理液之霧氣之情形下,亦藉由防霧氣附著構件防止處理液之霧氣附著於基板之下表面。藉此,可防止因處理液所致之基板之下表面之污染。(8) The inner edge of the lower cup may be located below the outer edge of the anti-fog adhesion member. In this case, the inner edge of the lower cup is sufficiently close to the substrate. Therefore, when the flying distance of the processing liquid is short, the processing liquid can still be collected by the lower cup. Furthermore, even when the processing liquid collides with the lower cup near the substrate to generate mist of the processing liquid, the anti-fog adhesion member prevents the mist of the processing liquid from adhering to the lower surface of the substrate. Thereby, the contamination of the lower surface of the substrate due to the processing liquid can be prevented.

(9)於基板處理所使用之處理液之黏度可為100 cP以上300 cP以下。根據該構成,由於藉由防霧氣附著構件防止處理液之霧氣附著於基板之下表面,故即便在基板處理使用之處理液之黏度為比較高之情形下,仍可在不使用洗淨液下防止基板之下表面之污染。(9) The viscosity of the processing liquid used in substrate processing may be 100 cP or more and 300 cP or less. According to this configuration, since the mist of the processing liquid is prevented from adhering to the lower surface of the substrate by the anti-fog adhesion member, even when the viscosity of the processing liquid used for substrate processing is relatively high, it can still be used without using the cleaning liquid Prevent contamination of the surface under the substrate.

(10)本發明之又一態樣之基板處理裝置具備:旋轉保持裝置,其將基板保持為水平姿勢且使其旋轉;處理液噴出部,其對藉由旋轉保持裝置保持之基板之被處理面噴出處理液;及本發明之一態樣之處理杯單元,其以包圍藉由旋轉保持裝置保持之基板之周圍之方式設置。(10) A substrate processing apparatus according to still another aspect of the present invention includes: a rotation holding device that holds the substrate in a horizontal posture and rotates it; and a processing liquid ejection section that processes the substrate held by the rotation holding device The processing liquid is ejected from the surface; and the processing cup unit according to one aspect of the present invention is provided to surround the substrate held by the rotation holding device.

在該基板處理裝置中,基板藉由旋轉保持裝置保持為水平姿勢並旋轉。在該狀態下,藉由利用處理液噴出部對基板之被處理面噴出處理液而處理基板。由於以包圍基板之周圍之方式設置有上述之處理杯單元,故防止因處理液之飛散所致之基板處理裝置之污染。In this substrate processing apparatus, the substrate is held in a horizontal posture by the rotation holding device and rotated. In this state, the substrate is processed by ejecting the processing liquid on the surface of the substrate to be processed by the processing liquid ejecting portion. Since the above-mentioned processing cup unit is provided in such a way as to surround the periphery of the substrate, the contamination of the substrate processing device due to the scattering of the processing liquid is prevented.

又,即便在自基板飛散之處理液與下杯或上杯衝撞而產生處理液之霧氣之情形下,亦藉由防霧氣附著構件防止處理液之霧氣附著於基板之下表面。藉此,可防止因處理液所致之基板之下表面之污染。進而,由於處理液不附著於基板之下表面,故無須將用於洗淨基板之下表面之洗淨液供給至基板之下表面。因此,可削減基板處理之洗淨液之使用量。Moreover, even in the case where the processing liquid scattered from the substrate collides with the lower cup or the upper cup to generate mist of the processing liquid, the anti-fog adhesion member prevents the mist of the processing liquid from adhering to the lower surface of the substrate. Thereby, the contamination of the lower surface of the substrate due to the processing liquid can be prevented. Furthermore, since the processing liquid does not adhere to the lower surface of the substrate, there is no need to supply the cleaning liquid for cleaning the lower surface of the substrate to the lower surface of the substrate. Therefore, the amount of cleaning solution used for substrate processing can be reduced.

[發明之效果] 根據本發明,能夠防止因處理液所致之基板之下表面之污染。[Effect of invention] According to the present invention, it is possible to prevent contamination of the lower surface of the substrate due to the processing liquid.

(1)基板處理裝置之構成 以下,對於本發明之一實施形態之處理杯單元及基板處理裝置,一面參照圖式一面進行說明。圖1係沿著本發明之一實施形態之基板處理裝置之一方向之概略剖視圖。圖2係圖1之處理杯單元10之部分放大剖視圖。如圖1所示般,基板處理裝置100具備:處理杯單元10、旋轉保持裝置20、及處理噴嘴30。處理杯單元10係防止處理液自基板W飛散之非旋轉杯,以包圍基板W之周圍之方式設置。(1) Structure of substrate processing apparatus Hereinafter, a processing cup unit and a substrate processing apparatus according to an embodiment of the present invention will be described with reference to the drawings. 1 is a schematic cross-sectional view along a direction of a substrate processing apparatus according to an embodiment of the present invention. 2 is a partially enlarged cross-sectional view of the processing cup unit 10 of FIG. 1. As shown in FIG. 1, the substrate processing apparatus 100 includes a processing cup unit 10, a rotation holding device 20, and a processing nozzle 30. The processing cup unit 10 is a non-rotating cup that prevents the processing liquid from scattering from the substrate W, and is provided so as to surround the periphery of the substrate W.

旋轉保持裝置20例如係旋轉卡盤,包含驅動裝置21及旋轉保持部23。驅動裝置21例如係電動馬達,具有旋轉軸22。旋轉保持部23安裝於驅動裝置21之旋轉軸22之前端,以將基板W保持為水平姿勢之狀態圍繞鉛垂軸被旋轉驅動。在以下之說明中,如利用圖1之粗箭頭所示般,在水平面內,將朝向保持於旋轉保持部23之基板W之中心部之方向定義為內方,將其相反方向定義為外方。The rotation holding device 20 is, for example, a spin chuck, and includes a drive device 21 and a rotation holding portion 23. The drive device 21 is, for example, an electric motor, and has a rotating shaft 22. The rotation holding portion 23 is attached to the front end of the rotation shaft 22 of the drive device 21, and is rotationally driven around the vertical axis while holding the substrate W in a horizontal posture. In the following description, as indicated by the thick arrows in FIG. 1, in the horizontal plane, the direction toward the center of the substrate W held by the rotation holding portion 23 is defined as the inner side, and the opposite direction is defined as the outer side .

處理噴嘴30連接於處理液供給系統A,如圖1中利用虛線之箭頭所示般,在基板W之中心之上方之處理位置與處理杯單元10之外方之待機位置之間可移動地設置。處理噴嘴30在基板處理時,自待機位置移動至處理位置,將儲存於處理液供給系統A之處理液朝旋轉之基板W之被處理面之中心附近噴出。儲存於處理液供給系統A之處理液例如為抗蝕劑液等塗佈液,具有比較高之黏度。在本例中,處理液之黏度為100 cP以上300 cP以下。The processing nozzle 30 is connected to the processing liquid supply system A, and is movably provided between the processing position above the center of the substrate W and the standby position outside the processing cup unit 10, as indicated by the dotted arrow in FIG. . During the substrate processing, the processing nozzle 30 moves from the standby position to the processing position, and discharges the processing liquid stored in the processing liquid supply system A toward the center of the processing surface of the rotating substrate W. The processing liquid stored in the processing liquid supply system A is, for example, a coating liquid such as a resist liquid, and has a relatively high viscosity. In this example, the viscosity of the treatment liquid is 100 cP or more and 300 cP or less.

如圖2所示般,處理杯單元10以包圍保持於旋轉保持部23之基板W之周圍之方式設置,包含:下杯11、上杯12及側壁部13。下杯11以包圍基板W之下方之空間之周圍之方式配置。在本例中,下杯11之內緣部位於較上杯12之內緣部更靠近內方,且位於基板W之外緣部之下方。又,為了防止下杯11與配置於基板W之下方之後述之防霧氣附著構件17干擾,而在下杯11之內緣部之上部形成有缺口11n。As shown in FIG. 2, the processing cup unit 10 is provided so as to surround the substrate W held and held by the rotation holding portion 23, and includes the lower cup 11, the upper cup 12, and the side wall portion 13. The lower cup 11 is arranged so as to surround the space below the substrate W. In this example, the inner edge portion of the lower cup 11 is located closer to the inner side than the inner edge portion of the upper cup 12 and is located below the outer edge portion of the substrate W. In addition, in order to prevent the lower cup 11 from interfering with the anti-fog adhesion member 17 which will be disposed below the substrate W, a notch 11n is formed in the upper portion of the inner edge of the lower cup 11.

下杯11之上表面11a自內方朝向外方傾斜,且朝下方略微傾斜。於下杯11之上表面11a,形成有槽部11g,其沿著下杯11之外周部朝下方凹陷,且在水平面內圓環狀地延伸。於槽部11g內設置有振動構件14。此處,既可設置1個在水平面內圓環狀地延伸之振動構件14,亦可將複數個振動構件14以大致等角度間隔地配置。振動構件14為例如超音波振動子。The upper surface 11a of the lower cup 11 is inclined from the inside toward the outside, and slightly inclined downward. A groove portion 11g is formed on the upper surface 11a of the lower cup 11 and is recessed downward along the outer peripheral portion of the lower cup 11 and extends annularly in a horizontal plane. The vibration member 14 is provided in the groove portion 11g. Here, one vibration member 14 extending annularly in a horizontal plane may be provided, or a plurality of vibration members 14 may be arranged at substantially equal angular intervals. The vibration member 14 is, for example, an ultrasonic vibrator.

上杯12以自側壁部13之後述之厚壁部13a之上部朝內方突出且包圍基板W之上方之空間之周圍之方式配置於下杯11之上方。上杯12之下表面12a包含部分p1、p2、p3。下表面12a之部分p1自內方朝向外方傾斜且朝下方急劇地傾斜。下表面12a之部分p2自部分p1之外周部朝向外方傾斜且朝下方和緩地傾斜。下表面12a之部分p3自部分p2之外周部朝向外側大致水平地延伸。The upper cup 12 is arranged above the lower cup 11 so as to protrude inward from the upper part of the thick-walled part 13a described later on the side wall part 13 and surround the space above the substrate W. The lower surface 12a of the upper cup 12 contains portions p1, p2, p3. The portion p1 of the lower surface 12a is inclined from the inner side toward the outer side and steeply downward. The portion p2 of the lower surface 12a is inclined outward from the outer peripheral portion of the portion p1 and gently inclined downward. The portion p3 of the lower surface 12a extends substantially horizontally from the outer peripheral portion of the portion p2 toward the outside.

藉此,下杯11之上表面11a與上杯12之下表面12a之間隔,自內方朝向外方逐漸減小。以下,將下杯11之上表面11a與上杯12之下表面12a之部分p2之間之空間,稱為捕集空間V1。將下杯11之上表面11a與上杯12之下表面12a之部分p3之間之空間,稱為集合空間V2。捕集空間V1之上下方向之最大長度為例如20 mm以上50 mm以下。捕集空間V1之徑向之最大長度為例如20 mm以上40 mm以下。As a result, the distance between the upper surface 11a of the lower cup 11 and the lower surface 12a of the upper cup 12 gradually decreases from the inner side toward the outer side. Hereinafter, the space between the upper surface 11a of the lower cup 11 and the portion p2 of the lower surface 12a of the upper cup 12 is referred to as a collection space V1. The space between the upper surface 11a of the lower cup 11 and the portion p3 of the lower surface 12a of the upper cup 12 is referred to as a collection space V2. The maximum length of the collection space V1 in the vertical direction is, for example, 20 mm or more and 50 mm or less. The maximum radial length of the collection space V1 is, for example, 20 mm or more and 40 mm or less.

於上杯12之下表面12a形成有槽部12g,其沿著上杯12之外周部朝上方凹陷且在水平面內圓環狀地延伸。藉此,於下杯11之槽部11g與上杯12之槽部12g之間,形成有較集合空間V2大之散亂空間V3。於槽部12g之底部,以大致等角度間隔地形成有沿大致上下方向延伸且與散亂空間V3相連之複數個貫通孔12h。在圖2中,僅圖示1個貫通孔12h。A groove portion 12g is formed on the lower surface 12a of the upper cup 12, which is recessed upward along the outer peripheral portion of the upper cup 12 and extends annularly in a horizontal plane. Thereby, between the groove portion 11g of the lower cup 11 and the groove portion 12g of the upper cup 12, a scattered space V3 larger than the collection space V2 is formed. At the bottom of the groove portion 12g, a plurality of through-holes 12h extending in the substantially vertical direction and connected to the scattered space V3 are formed at substantially equal angular intervals. In FIG. 2, only one through hole 12h is shown.

側壁部13包含厚壁部13a及薄壁部13b。在本例中,上杯12、厚壁部13a及薄壁部13b一體地形成。在圖2中,利用虛線圖示上杯12與厚壁部13a與薄壁部13b之邊界。厚壁部13a配置於下杯11及上杯12之外側。又,厚壁部13a之內緣部位於下杯11之外緣部之上方。於側壁部13之外周下部,形成有槽部13g,其朝上方凹陷且在水平面內圓環狀地延伸。The side wall portion 13 includes a thick portion 13a and a thin portion 13b. In this example, the upper cup 12, the thick portion 13a, and the thin portion 13b are integrally formed. In FIG. 2, the boundary between the upper cup 12 and the thick portion 13 a and the thin portion 13 b is shown by broken lines. The thick portion 13a is disposed outside the lower cup 11 and the upper cup 12. In addition, the inner edge of the thick portion 13a is located above the outer edge of the lower cup 11. In the lower part of the outer periphery of the side wall portion 13, a groove portion 13g is formed, which is recessed upward and extends annularly in a horizontal plane.

薄壁部13b具有較厚壁部13a小之厚度,自厚壁部13a之外緣部之下方沿著下杯11之外側及下杯11之下方延伸。藉此,於薄壁部13b與下杯11之間形成排出空間V4。於厚壁部13a之內緣部與下杯11之外緣部之間,設置有連接散亂空間V3與排出空間V4之微小之間隙S。The thin portion 13b has a smaller thickness than the thick portion 13a, and extends from below the outer edge of the thick portion 13a along the outer side of the lower cup 11 and below the lower cup 11. Thereby, a discharge space V4 is formed between the thin portion 13b and the lower cup 11. Between the inner edge portion of the thick portion 13a and the outer edge portion of the lower cup 11, a small gap S connecting the scattered space V3 and the discharge space V4 is provided.

於下杯11之下方,設置有與排出空間V4相連之排氣流路F1及廢液流路F2。排氣流路F1連接於圖1之排氣系統B。排氣系統B將自排氣流路F1排出之氣體朝工廠內之排氣設備導引。廢液流路F2位於排氣流路F1之外側,連接於圖1之廢液系統C。廢液系統C將自廢液流路F2排出之液體朝工廠內之廢液設備導引。Below the lower cup 11, an exhaust flow path F1 and a waste liquid flow path F2 connected to the discharge space V4 are provided. The exhaust flow path F1 is connected to the exhaust system B of FIG. 1. The exhaust system B guides the gas discharged from the exhaust flow path F1 toward the exhaust equipment in the factory. The waste liquid flow path F2 is located outside the exhaust flow path F1 and is connected to the waste liquid system C of FIG. 1. The waste liquid system C guides the liquid discharged from the waste liquid flow path F2 toward the waste liquid equipment in the factory.

於上杯12,安裝有與複數個貫通孔12h各自對應之複數個洗淨噴嘴15。複數個洗淨噴嘴15經由配管P連接於圖1之洗淨液供給系統D。再者,配管P在上杯12之上部,在水平面內呈圓環狀地被引繞。各洗淨噴嘴15經由配管P及對應之貫通孔12h,將儲存於洗淨液供給系統D之洗淨液自上方朝散亂空間V3及槽部11g噴出。藉此,下杯11、上杯12及側壁部13被洗淨,且洗淨液被儲存於槽部11g。A plurality of washing nozzles 15 corresponding to the plurality of through-holes 12h are attached to the upper cup 12, respectively. A plurality of cleaning nozzles 15 are connected to the cleaning liquid supply system D of FIG. 1 via a pipe P. Furthermore, the pipe P is led in an annular shape in the horizontal plane above the upper cup 12. Each cleaning nozzle 15 discharges the cleaning liquid stored in the cleaning liquid supply system D toward the scattered space V3 and the groove portion 11g from above through the pipe P and the corresponding through hole 12h. Thereby, the lower cup 11, the upper cup 12, and the side wall portion 13 are washed, and the washing liquid is stored in the groove portion 11g.

儲存於洗淨液供給系統D之洗淨液為將處理液加以溶解之沖洗液等液體。具體而言,洗淨液既可為例如PGME(propyleneglycol monomethyl ether,丙二醇單甲醚),亦可為PGMEA(propyleneglycol monomethyl ether acetate,丙二醇單甲醚乙酸酯),還可為環己酮。或者,洗淨液亦可為例如PGME與PGMEA之混合液,其混合比可為例如7:3。The cleaning liquid stored in the cleaning liquid supply system D is a liquid such as rinse liquid that dissolves the processing liquid. Specifically, the cleaning solution may be, for example, PGME (propyleneglycol monomethyl ether), PGMEA (propyleneglycol monomethyl ether acetate), or cyclohexanone. Alternatively, the washing liquid may be, for example, a mixed liquid of PGME and PGMEA, and the mixing ratio thereof may be, for example, 7:3.

處理杯單元10更包含墊16、防霧氣附著構件17及複數個氣體噴嘴18。墊16係為了回收噴出至基板W之處理液而使用之構件,例如具有圓板形狀。墊16以包圍圖1之驅動裝置21之旋轉軸22之周圍之方式配置於基板W之下方。The processing cup unit 10 further includes a pad 16, an anti-fog adhesion member 17 and a plurality of gas nozzles 18. The pad 16 is a member used for recovering the processing liquid ejected onto the substrate W, and has a disk shape, for example. The pad 16 is disposed below the substrate W so as to surround the rotation shaft 22 of the driving device 21 of FIG. 1.

防霧氣附著構件17係防止後述之處理液之霧氣附著於基板W之下表面之構件,例如具有大致圓板形狀。防霧氣附著構件17以包圍圖1之旋轉保持部23之周圍之方式配置於基板W與墊16之間,藉由未圖示之支持構件支持於墊16。The anti-fog adhesion member 17 is a member that prevents the mist of the processing liquid described later from adhering to the lower surface of the substrate W, and has a substantially circular plate shape, for example. The anti-fog adhesion member 17 is disposed between the substrate W and the pad 16 so as to surround the rotation holding portion 23 of FIG. 1, and is supported on the pad 16 by a support member (not shown).

防霧氣附著構件17之上表面,接近與基板W之被處理面為相反側之下表面,且沿著基板W之下表面自內方朝外方延伸。藉此,防霧氣附著構件17之上表面與基板W之下表面之間之空間V5狹窄地形成。防霧氣附著構件17之上表面與基板W之下表面之間隔為例如2 mm以上3 mm以下,最大為5 mm。The upper surface of the anti-fog adhesion member 17 is close to the lower surface on the opposite side to the surface to be treated of the substrate W, and extends from the inner side to the outer side along the lower surface of the substrate W. Thereby, the space V5 between the upper surface of the anti-fog adhesion member 17 and the lower surface of the substrate W is narrowly formed. The distance between the upper surface of the anti-fog adhesion member 17 and the lower surface of the substrate W is, for example, 2 mm or more and 3 mm or less, and the maximum is 5 mm.

在本例中,防霧氣附著構件17之上表面與基板W之下表面之間隔自內方朝向外方逐漸減小。該情形下,更狹窄地形成空間V5。又,防霧氣附著構件17之外緣部位於較基板W之外緣部更靠近內方。該情形下亦然,可將空間V5狹窄地形成。In this example, the distance between the upper surface of the anti-fog adhesion member 17 and the lower surface of the substrate W gradually decreases from the inner side toward the outer side. In this case, the space V5 is formed narrower. In addition, the outer edge of the anti-fog adhesion member 17 is located closer to the inner side than the outer edge of the substrate W. Even in this case, the space V5 can be narrowly formed.

複數個氣體噴嘴18連接於氣體供給部E,以在基板W之下方將防霧氣附著構件17朝斜上方貫通之方式大致等角度間隔地設置。各氣體噴嘴18將被封入氣體供給部E之氣體供給至旋轉之基板W之下表面。供給至基板W之下表面之氣體被沿著基板W之下表面自內方朝外方導引。封入氣體供給部E之氣體例如為氮。封入氣體供給部E之氣體亦可為潔凈空氣等其他氣體。A plurality of gas nozzles 18 are connected to the gas supply part E, and are provided at substantially equal angular intervals so as to penetrate the anti-fog gas attachment member 17 obliquely upward below the substrate W. Each gas nozzle 18 supplies the gas enclosed in the gas supply part E to the lower surface of the rotating substrate W. The gas supplied to the lower surface of the substrate W is guided from the inner side to the outer side along the lower surface of the substrate W. The gas enclosed in the gas supply part E is nitrogen, for example. The gas enclosed in the gas supply part E may be other gases such as clean air.

(2)基板處理裝置之動作 一面參照圖1及圖2,一面說明基板處理裝置100之動作。基板W以被處理面朝向上方之狀態藉由旋轉保持部23保持為水平姿勢。在該狀態下,基板W藉由旋轉保持部23旋轉,且處理液自處理噴嘴30朝基板W之被處理面之中心附近噴出。藉此,朝基板W之被處理面之中心附近噴出之處理液藉由伴隨著基板W之旋轉之離心力而擴展至基板W之被處理面之整體,而在基板W之被處理面形成處理液之膜。(2) Operation of the substrate processing device 1 and 2, the operation of the substrate processing apparatus 100 will be described. The substrate W is held in a horizontal posture by the rotation holding portion 23 with the surface to be processed facing upward. In this state, the substrate W is rotated by the rotation holding portion 23, and the processing liquid is discharged from the processing nozzle 30 toward the vicinity of the center of the surface of the substrate W to be processed. By this, the processing liquid ejected toward the center of the processed surface of the substrate W is spread to the entire processed surface of the substrate W by the centrifugal force accompanying the rotation of the substrate W, and the processed liquid is formed on the processed surface of the substrate W Of the film.

此處,當基板W以較特定之旋轉速度大之旋轉速度旋轉之情形下,供給至基板W之被處理面之具有高動能之處理液被自基板W之被處理面甩開,在上下方向具有幅度地自基板W之周緣部朝外方飛散。自基板W飛散之處理液藉由下杯11之上表面11a與上杯12之下表面12a而捕集於捕集空間V1。Here, when the substrate W rotates at a rotation speed greater than a specific rotation speed, the processing liquid having high kinetic energy supplied to the processed surface of the substrate W is thrown away from the processed surface of the substrate W in the up and down direction It spreads outward from the peripheral portion of the substrate W with a width. The processing liquid scattered from the substrate W is collected in the collection space V1 by the upper surface 11 a of the lower cup 11 and the lower surface 12 a of the upper cup 12.

被捕集於捕集空間V1之處理液被沿著下杯11之上表面11a及上杯12之下表面12a朝外方導引,在集合空間V2集合且通過集合空間V2。通過集合空間V2之處理液到達飛散空間V3,與側壁部13之厚壁部13a衝撞而在散亂空間V3朝上下方向及徑向散亂。散亂後之處理液之一部分失去動能且因重力而落下,藉而儲存於槽部11g。另一方面,有散亂後之處理液之另外一部分成為霧氣之情形。The treatment liquid trapped in the trapping space V1 is guided outward along the upper surface 11a of the lower cup 11 and the lower surface 12a of the upper cup 12, and gathers in the collection space V2 and passes through the collection space V2. The processing liquid passing through the collection space V2 reaches the flying space V3, collides with the thick portion 13a of the side wall portion 13, and is scattered in the up-down direction and the radial direction in the scattering space V3. A part of the scattered processing liquid loses kinetic energy and falls due to gravity, and is stored in the groove portion 11g. On the other hand, there is a case where another part of the treatment liquid after the scattering becomes mist.

在該情形下亦然,集合空間V2之間隔自內方朝向外方逐漸減小。又,自基板W飛散之處理液自內方朝向外方連續地通過集合空間V2。因此,處理液之霧氣被朝向外方通過集合空間V2之處理液之流動回推,而處理液之霧氣不會再次通過集合空間V2而返回捕集空間V1。藉此,防止處理液之霧氣逆流而附著於基板W之被處理面及下表面,且防止處理液之霧氣朝處理杯單元10外飛散。In this case as well, the interval of the collection space V2 gradually decreases from the inner side toward the outer side. Furthermore, the processing liquid scattered from the substrate W continuously passes through the collection space V2 from the inside toward the outside. Therefore, the mist of the treatment liquid is pushed back toward the outside through the flow of the treatment liquid in the collection space V2, and the mist of the treatment liquid does not pass through the collection space V2 again and returns to the collection space V1. This prevents the mist of the processing liquid from flowing back and adhering to the processed surface and the lower surface of the substrate W, and prevents the mist of the processing liquid from flying out of the processing cup unit 10.

又,藉由防霧氣附著構件17,而狹窄地形成防霧氣附著構件17之上表面與基板W之下表面之間之空間V5。又,藉由複數個氣體噴嘴18而沿著基板W之下表面自內方朝外方供給氣體。因此,空間V5被維持為正壓。進而,散亂空間V3之氣體在通過間隙S而被導引至排出空間V4後,自排氣流路F1排出。自排氣流路F1排出之氣體藉由排氣系統B導引至工廠內之排氣設備。In addition, the anti-fog adhesion member 17 narrowly forms the space V5 between the upper surface of the anti-fog adhesion member 17 and the lower surface of the substrate W. In addition, a plurality of gas nozzles 18 supply gas from the inside to the outside along the lower surface of the substrate W. Therefore, the space V5 is maintained at a positive pressure. Furthermore, the gas in the scattered space V3 is guided to the discharge space V4 through the gap S, and then discharged from the exhaust flow path F1. The gas discharged from the exhaust flow path F1 is guided to the exhaust equipment in the factory through the exhaust system B.

根據上述之構成,藉由防霧氣附著構件17防止形成自基板W之外方朝向基板W之下表面之氣流。因此,在處理杯單元10中彈回之處理液之霧氣不會附著於基板W之下表面,從而基板W之被處理面之處理液不會迂迴至下表面。藉此,即便在不利用洗淨液洗淨基板W之下表面之情形下,仍可防止因處理液所致之基板之下表面之污染。又,由於無在處理杯單元10彈回之處理液附著於基板W之被處理面之情形,故可防止形成於被處理面之膜被污染。According to the above configuration, the anti-fog adhesion member 17 prevents the airflow formed from the outside of the substrate W toward the lower surface of the substrate W. Therefore, the mist of the processing liquid rebounded in the processing cup unit 10 does not adhere to the lower surface of the substrate W, so that the processing liquid of the processed surface of the substrate W does not detour to the lower surface. Thereby, even if the lower surface of the substrate W is not cleaned with the cleaning liquid, the contamination of the lower surface of the substrate due to the processing liquid can be prevented. In addition, since there is no case where the processing liquid rebounded by the processing cup unit 10 adheres to the processed surface of the substrate W, it is possible to prevent the film formed on the processed surface from being contaminated.

到達散亂空間V3之處理液之一部分附著於與散亂空間V3相接之處理杯單元10內之壁面。此處,洗淨液自複數個洗淨噴嘴15分別通過複數個貫通孔12h朝散亂空間V3及槽部11g噴出。被噴出至散亂空間V3之洗淨液在與散亂空間V3相接之處理杯單元10內之壁面傳遞而被朝下方導引。藉此,附著於壁面之洗淨液被溶解,如圖2中利用箭頭X所示般與洗淨液一起儲存於下杯11之槽部11g內。A part of the processing liquid that reaches the scattered space V3 is attached to the wall surface in the processing cup unit 10 that is in contact with the scattered space V3. Here, the washing liquid is sprayed from the plurality of washing nozzles 15 through the plurality of through holes 12h toward the scattered space V3 and the groove portion 11g. The washing liquid sprayed to the scattered space V3 is transmitted to the wall surface in the processing cup unit 10 which is in contact with the scattered space V3 and is guided downward. As a result, the washing liquid adhering to the wall surface is dissolved and stored in the groove portion 11g of the lower cup 11 together with the washing liquid as indicated by the arrow X in FIG. 2.

此處,被溶解且被儲存於槽部11g內之處理液,藉由設置於槽部11g內之振動構件14振動而被低黏度化。被低黏度化之處理液藉由氣流通過間隙S而被朝排出空間V4導引。此處,由於槽部11g沿著下杯11之外周部而形成,故槽部11g與基板W之距離充分地隔開。因此,容易地防止經低黏度化之處理液逆流而再次附著於基板W。Here, the treatment liquid dissolved and stored in the tank portion 11g is reduced in viscosity by vibrating the vibrating member 14 provided in the tank portion 11g. The treatment liquid reduced in viscosity is guided toward the discharge space V4 by the air flow through the gap S. Here, since the groove portion 11g is formed along the outer peripheral portion of the lower cup 11, the distance between the groove portion 11g and the substrate W is sufficiently separated. Therefore, it is easy to prevent the treatment liquid having a reduced viscosity from flowing back and adhering to the substrate W again.

又,即便當自槽部11g被導引至排出空間V4之處理液與側壁部13之薄壁部13b衝撞,朝上方向擴展或浮起之情形下,該處理液仍會被槽部13g捕捉,藉由重力返回下方之排出空間V4。其後,排出空間V4之處理液自廢液流路F2被排出,藉由廢液系統C朝工廠內之廢液設備導引。Moreover, even when the processing liquid guided from the groove portion 11g to the discharge space V4 collides with the thin portion 13b of the side wall portion 13 and expands or floats upward, the processing liquid is still caught by the groove portion 13g , Return to the discharge space V4 below by gravity. Thereafter, the processing liquid in the discharge space V4 is discharged from the waste liquid flow path F2, and is guided to the waste liquid equipment in the factory by the waste liquid system C.

根據上述之構成,即便在處理液之黏度為高之情形下,處理液亦不會以保持附著於處理杯單元10之壁面之狀態殘留。因此,防止處理杯單元10內之用於排氣及廢液之路徑被處理液堵塞。又,由於處理液被低黏度化,故容易地排出至處理杯單元10外。藉此,防止處理杯單元10之污染,亦防止處理液在處理杯單元10內產生微粒。因此,減少卸下處理杯單元10而進行洗淨之頻度或更換處理杯單元10之頻度。其結果為,可降低處理杯單元10之保養維修之頻度。According to the above configuration, even in the case where the viscosity of the processing liquid is high, the processing liquid does not remain in a state of being attached to the wall surface of the processing cup unit 10. Therefore, the path for exhaust and waste liquid in the processing cup unit 10 is prevented from being blocked by the processing liquid. In addition, since the processing liquid is reduced in viscosity, it is easily discharged out of the processing cup unit 10. Thereby, contamination of the processing cup unit 10 is prevented, and particles of the processing liquid in the processing cup unit 10 are also prevented. Therefore, the frequency with which the processing cup unit 10 is removed and washed or the frequency with which the processing cup unit 10 is replaced is reduced. As a result, the frequency of maintenance and repair of the processing cup unit 10 can be reduced.

(3)變化例 在本實施形態中,下杯11之上表面11a自內方朝向外方朝斜下方略微傾斜,但下杯11之形狀並不限定於此。圖3係變化例之處理杯單元10之部分放大剖視圖。如圖3所示般,下杯11之上表面11a可自內方朝向外方朝斜上方傾斜。在該構成中,在下杯11不與防霧氣附著構件17干擾之情形下,亦可不於下杯11形成缺口11n。或者,下杯11之上表面11a亦可幾乎不傾斜,而為大致水平。(3) Variation In this embodiment, the upper surface 11a of the lower cup 11 is slightly inclined downward from the inner side toward the outer side, but the shape of the lower cup 11 is not limited to this. FIG. 3 is a partially enlarged cross-sectional view of the processing cup unit 10 of a modified example. As shown in FIG. 3, the upper surface 11a of the lower cup 11 may be inclined obliquely upward from the inside toward the outside. In this configuration, when the lower cup 11 does not interfere with the anti-fog adhesion member 17, the notch 11n may not be formed in the lower cup 11. Alternatively, the upper surface 11a of the lower cup 11 may be almost horizontal without being inclined.

(4)效果 在本實施形態之基板處理裝置100中,基板W藉由旋轉保持裝置20保持在水平姿勢並旋轉。在該狀態下,藉由利用處理噴嘴30朝基板W之被處理面噴出處理液來處理基板W。由於以包圍基板W之周圍之方式設置處理杯單元10,故可防止因處理液之飛散所致之基板處理裝置100之污染。(4) Effect In the substrate processing apparatus 100 of this embodiment, the substrate W is held in the horizontal posture by the rotation holding device 20 and rotated. In this state, the processing nozzle 30 discharges the processing liquid toward the processing surface of the substrate W to process the substrate W. Since the processing cup unit 10 is provided so as to surround the periphery of the substrate W, it is possible to prevent contamination of the substrate processing apparatus 100 due to the scattering of the processing liquid.

在處理杯單元10中,防霧氣附著構件17配置於基板W之下方。根據該構成,即便在自基板W飛散之處理液與下杯11或上杯12衝撞而產生處理液之霧氣之情形下,亦藉由防霧氣附著構件17來防止處理液之霧氣附著於基板W之下表面。藉此,可防止因處理液所致之基板W之下表面之污染。又,由於處理液未附著於基板W之下表面,故無須將用於洗淨基板W之下表面之洗淨液供給至基板W之下表面。因此,可削減基板處理之洗淨液之使用量。In the processing cup unit 10, the anti-fog adhesion member 17 is arranged below the substrate W. According to this configuration, even when the processing liquid scattered from the substrate W collides with the lower cup 11 or the upper cup 12 to generate mist of the processing liquid, the anti-fog adhesion member 17 prevents the mist of the processing liquid from adhering to the substrate W Under the surface. Thereby, the contamination of the lower surface of the substrate W due to the processing liquid can be prevented. In addition, since the processing liquid does not adhere to the lower surface of the substrate W, there is no need to supply the cleaning liquid for cleaning the lower surface of the substrate W to the lower surface of the substrate W. Therefore, the amount of cleaning solution used for substrate processing can be reduced.

又,在處理杯單元10中,自基板W飛散之處理液在形成於下杯11之槽部11g溶解且被儲存,並藉由振動構件14振動後,自排出空間V4排出。根據該構成,處理液藉由在槽部11g中被振動構件14振動而被低黏度化。因此,容易將處理液排出至處理杯單元10外。該情形下,減少附著於下杯11、上杯12或側壁部13之壁面而殘留之處理液之量。藉此,可減少處理杯單元10之保養維修之頻率。In the processing cup unit 10, the processing liquid scattered from the substrate W is dissolved and stored in the groove portion 11g formed in the lower cup 11 and vibrated by the vibrating member 14, and then discharged from the discharge space V4. According to this configuration, the treatment liquid is reduced in viscosity by vibrating by the vibrating member 14 in the groove portion 11g. Therefore, it is easy to discharge the processing liquid out of the processing cup unit 10. In this case, the amount of the treatment liquid remaining on the wall surface of the lower cup 11, the upper cup 12, or the side wall portion 13 is reduced. Thereby, the frequency of maintenance and repair of the processing cup unit 10 can be reduced.

進而,在本實施形態中,下杯11之內緣部充分地接近基板W。具體而言,下杯11之內緣部位於較上杯12之內緣部靠近內側。或者是,下杯11之內緣部位於基板W之外緣部或防霧氣附著構件17之外緣部之下方。因此,即便在因基板W之旋轉速度小、或處理液之黏度大而處理液之飛散距離短之情形下,亦可藉由下杯11捕集處理液。Furthermore, in the present embodiment, the inner edge of the lower cup 11 is sufficiently close to the substrate W. Specifically, the inner edge of the lower cup 11 is located closer to the inner edge than the inner edge of the upper cup 12. Alternatively, the inner edge of the lower cup 11 is located below the outer edge of the substrate W or the outer edge of the anti-fog adhesion member 17. Therefore, even in the case where the rotation speed of the substrate W is small or the viscosity of the processing liquid is high and the flying distance of the processing liquid is short, the processing liquid can be captured by the lower cup 11.

藉由下杯11捕集之處理液,被導引至形成於下杯11之槽部11g。藉此,可將處理液排出至處理杯單元10外。又,即便當處理液在基板W之附近與下杯11衝撞而處理液之一部分成為霧氣之情形下,亦可藉由防霧氣附著構件17防止處理液之霧氣附著於基板W之下表面。因此,可防止因處理液所致之基板W之下表面之污染。The processing liquid collected by the lower cup 11 is guided to the groove portion 11g formed in the lower cup 11. With this, the processing liquid can be discharged out of the processing cup unit 10. Moreover, even when the processing liquid collides with the lower cup 11 near the substrate W and a part of the processing liquid becomes mist, the anti-fog adhesion member 17 can prevent the mist of the processing liquid from adhering to the lower surface of the substrate W. Therefore, it is possible to prevent contamination of the lower surface of the substrate W due to the processing liquid.

5.其他實施形態 (a)在上述實施形態中,處理杯單元10包含氣體噴嘴18,但本發明並不限定於此。在防霧氣附著構件17之上表面與基板W之下表面之間之空間V5充分狹窄地形成之情形下,處理杯單元10亦可不包含氣體噴嘴18。 (b)在上述實施形態中,處理杯單元10包含洗淨噴嘴15,但本發明並不限定於此。在能夠緩和處理液之黏度變高之情形下,處理杯單元10亦可不包含洗淨噴嘴15。又,在基板處理中,有使用將處理液加以溶解之有機溶劑等之溶解液之情形(例如預濕處理)。該情形下,於槽部11g除了處理液以外更儲存有溶解液,而將處理液溶解。因此,在如此之情形下亦然,處理杯單元10亦可不包含洗淨噴嘴15。 (c)在上述實施形態中,處理杯單元10包含振動構件14,但本發明並不限定於此。在能夠將處理液高效率地排出至處理杯單元10外之情形下,處理杯單元10亦可不包含振動構件14。5. Other embodiments (a) In the above embodiment, the processing cup unit 10 includes the gas nozzle 18, but the present invention is not limited to this. In the case where the space V5 between the upper surface of the anti-fog gas attachment member 17 and the lower surface of the substrate W is sufficiently narrow, the processing cup unit 10 may not include the gas nozzle 18. (b) In the above embodiment, the processing cup unit 10 includes the cleaning nozzle 15, but the present invention is not limited to this. When the viscosity of the processing liquid can be reduced, the processing cup unit 10 may not include the cleaning nozzle 15. In addition, in the substrate processing, a dissolving liquid such as an organic solvent in which the processing liquid is dissolved may be used (for example, a pre-wetting process). In this case, the dissolving liquid is stored in addition to the processing liquid in 11 g of the tank portion, and the processing liquid is dissolved. Therefore, even in such a case, the processing cup unit 10 may not include the washing nozzle 15. (c) In the above embodiment, the processing cup unit 10 includes the vibrating member 14, but the present invention is not limited to this. When the processing liquid can be efficiently discharged outside the processing cup unit 10, the processing cup unit 10 may not include the vibration member 14.

(6)請求項之各構成要素與實施形態之各部分之對應關係 以下,對於請求項之各構成要素與實施形態之各部分之對應之例進行說明,但本發明並不限定於下述之例。作為請求項之各構成要素可採用具有請求項所記載之構成或功能之其他各種要素。 在上述實施形態中,基板W為基板之例,處理杯單元10為處理杯單元之例,下杯11為下杯之例,上杯12為上杯之例。防霧氣附著構件17為防霧氣附著構件之例,氣體噴嘴18為氣體噴嘴之例,旋轉保持裝置20為旋轉保持裝置之例,處理噴嘴30為處理液噴出部之例,基板處理裝置100為基板處理裝置之例。(6) Correspondence between each component of the request item and each part of the embodiment Hereinafter, an example of correspondence between each constituent element of the request item and each part of the embodiment will be described, but the present invention is not limited to the following examples. As each constituent element of the request item, various other elements having the structure or function described in the request item can be used. In the above embodiment, the substrate W is an example of a substrate, the processing cup unit 10 is an example of a processing cup unit, the lower cup 11 is an example of a lower cup, and the upper cup 12 is an example of an upper cup. The anti-fog adhesion member 17 is an example of an anti-fog adhesion member, the gas nozzle 18 is an example of a gas nozzle, the rotation holding device 20 is an example of a rotation holding device, the processing nozzle 30 is an example of a processing liquid ejection portion, and the substrate processing device 100 is a substrate Examples of processing devices.

10:處理杯單元 11:下杯 11a:上表面 11g:槽部 11n:缺口 12:上杯 12a:下表面 12g:槽部 12h:貫通孔 13:側壁部 13a:厚壁部 13b:薄壁部 13g:槽部 14:振動構件 15:洗淨噴嘴 16:墊 17:防霧氣附著構件 18:氣體噴嘴 20:旋轉保持裝置 21:驅動裝置 22:旋轉軸 23:旋轉保持部 30:處理噴嘴 100:基板處理裝置 A:處理液供給系統 B:排氣系統 C:廢液系統 D:洗淨液供給系統 E:氣體供給部 F1:排氣流路 F2:廢液流路 P:配管 p1:部分 p2:部分 p3:部分 S:間隙 V1:捕集空間 V2:集合空間 V3:散亂空間 V4:排出空間 V5:空間 W:基板10: Handle the cup unit 11: next cup 11a: upper surface 11g: Groove 11n: Notch 12: Cup 12a: lower surface 12g: Groove 12h: through hole 13: Side wall 13a: thick wall 13b: Thin-walled part 13g: Groove 14: Vibration member 15: Wash nozzle 16: Pad 17: Anti-fog adhesion member 18: gas nozzle 20: Rotating holding device 21: Drive 22: Rotating axis 23: Rotating holding part 30: Processing nozzle 100: substrate processing device A: Treatment liquid supply system B: Exhaust system C: Waste liquid system D: Cleaning liquid supply system E: Gas supply unit F1: Exhaust flow path F2: Waste liquid flow path P: piping p1: part p2: part p3: part S: gap V1: capture space V2: Collection space V3: scattered space V4: discharge space V5: Space W: substrate

圖1係沿著本發明之一實施形態之基板處理裝置之一方向之概略剖視圖。 圖2係圖1之處理杯單元之部分放大剖視圖。 圖3係變化例之處理杯單元之部分放大剖視圖。1 is a schematic cross-sectional view along a direction of a substrate processing apparatus according to an embodiment of the present invention. 2 is a partially enlarged cross-sectional view of the processing cup unit of FIG. 1. 3 is a partially enlarged cross-sectional view of a processing cup unit according to a modification.

10:處理杯單元 10: Handle the cup unit

11:下杯 11: next cup

11a:上表面 11a: upper surface

11g:槽部 11g: Groove

11n:缺口 11n: Notch

12:上杯 12: Cup

12a:下表面 12a: lower surface

12g:槽部 12g: Groove

12h:貫通孔 12h: through hole

13:側壁部 13: Side wall

13a:厚壁部 13a: thick wall

13b:薄壁部 13b: Thin-walled part

13g:槽部 13g: Groove

14:振動構件 14: Vibration member

15:洗淨噴嘴 15: Wash nozzle

16:墊 16: Pad

17:防霧氣附著構件 17: Anti-fog adhesion member

18:氣體噴嘴 18: gas nozzle

F1:排氣流路 F1: Exhaust flow path

F2:廢液流路 F2: Waste liquid flow path

P:配管 P: piping

p1:部分 p1: part

p2:部分 p2: part

p3:部分 p3: part

S:間隙 S: gap

V1:捕集空間 V1: capture space

V2:集合空間 V2: Collection space

V3:散亂空間 V3: scattered space

V4:排出空間 V4: discharge space

V5:空間 V5: Space

W:基板 W: substrate

Claims (10)

一種處理杯單元,其係以對被保持在水平姿勢之基板進行使用處理液之處理時包圍基板之周圍之方式而被設置者,且包含: 下杯; 上杯,其在前述下杯之上方,以包圍基板之周圍之方式配置;及 防霧氣附著構件,其配置於基板之下方,且防止處理液之霧氣附著於基板之下表面。A processing cup unit which is installed in such a manner as to surround a substrate held in a horizontal posture when processing using a processing liquid, and includes: Next cup The upper cup is arranged above the lower cup in such a way as to surround the substrate; and The anti-fog adhesion member is arranged below the substrate and prevents the mist of the processing liquid from adhering to the lower surface of the substrate. 如請求項1之處理杯單元,其中前述防霧氣附著構件以沿著基板之下表面延伸且靠近基板之下表面之方式配置。The processing cup unit according to claim 1, wherein the aforementioned anti-fog adhesion member is arranged to extend along the lower surface of the substrate and close to the lower surface of the substrate. 如請求項2之處理杯單元,其中上下方向之前述防霧氣附著構件與基板之下表面之間隔為2 mm以上5 mm以下。The processing cup unit according to claim 2, wherein the distance between the aforementioned anti-fog adhesion member in the up and down direction and the lower surface of the substrate is 2 mm or more and 5 mm or less. 如請求項2或3之處理杯單元,其中上下方向之前述防霧氣附著構件與基板之下表面之間隔,自內側朝向外側逐漸減小。The processing cup unit according to claim 2 or 3, wherein the distance between the aforementioned anti-fog adhesion member in the up-down direction and the lower surface of the substrate gradually decreases from the inside toward the outside. 如請求項2或3之處理杯單元,其中前述防霧氣附著構件之外緣部,位於較基板之外緣部靠近內側。The processing cup unit according to claim 2 or 3, wherein the outer edge of the anti-fog adhesion member is located closer to the inner side than the outer edge of the substrate. 如請求項2或3之處理杯單元,其進而包含形成沿著基板之下表面自內側朝外側之氣體之流動之氣體噴嘴。The processing cup unit according to claim 2 or 3, which further includes a gas nozzle forming a flow of gas along the lower surface of the substrate from inside to outside. 如請求項2或3之處理杯單元,其中前述下杯之內緣部,位於較前述上杯之內緣部靠近內側。The processing cup unit according to claim 2 or 3, wherein the inner edge of the lower cup is located closer to the inner side than the inner edge of the upper cup. 如請求項2或3之處理杯單元,其中前述下杯之內緣部,位於前述防霧氣附著構件之外緣部之下方。The processing cup unit according to claim 2 or 3, wherein the inner edge portion of the aforementioned lower cup is located below the outer edge portion of the aforementioned anti-fog adhesion member. 如請求項2或3之處理杯單元,其中於基板處理所使用之處理液之黏度為100 cP以上300 cP以下。The processing cup unit according to claim 2 or 3, wherein the viscosity of the processing liquid used for substrate processing is 100 cP or more and 300 cP or less. 一種基板處理裝置,其包含:旋轉保持裝置,其將基板保持在水平姿勢並使其旋轉; 處理液噴出部,其對藉由前述旋轉保持裝置保持之基板之被處理面,噴出處理液;及 如請求項2或3之處理杯單元,其以包圍藉由前述旋轉保持裝置保持之基板之周圍之方式設置。A substrate processing apparatus including: a rotation holding device that holds a substrate in a horizontal posture and rotates it; A processing liquid ejecting part, which ejects the processing liquid to the surface of the substrate held by the rotation holding device; and The processing cup unit according to claim 2 or 3 is provided to surround the substrate held by the rotation holding device.
TW108136815A 2018-11-07 2019-10-14 Processing cup unit and substrate processing apparatus TWI747060B (en)

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